Mounting structure of semiconductor module

Abstract

A mounting structure of a semiconductor module includes a substrate having a main face and a back face facing opposite sides of each other in a thickness direction, a semiconductor module mounted on the main face side of the substrate, and a heat dissipating member that dissipates heat from the semiconductor module. The substrate has a gap portion that penetrates in the thickness direction. The heat dissipating member has a main body portion located on the back face side with respect to the substrate, and a protruding portion housed in the gap portion. The semiconductor module is engaged with the protruding portion.

Description

Technical Field

[0001] This invention relates to the mounting structure of semiconductor modules. Background Technology

[0002] In the prior art, semiconductor module mounting structures are used in automobiles, industrial equipment, and other applications. Patent Document 1 discloses an example of a semiconductor module mounting structure. In this mounting structure, the semiconductor module incorporates semiconductor components such as MOSFETs and is mounted on a substrate. Furthermore, in this mounting structure, the semiconductor module is connected to a heat dissipation component.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent document 1: Japanese Patent Application Publication No. 2013-94022. Summary of the Invention

[0006] The problem the invention aims to solve

[0007] The aforementioned heat dissipation components are positioned upright relative to the substrate. Therefore, there is a problem that the mounting structure of the semiconductor module increases in volume along the thickness direction of the substrate.

[0008] In view of the above, one problem of the present invention is to provide a mounting structure for a semiconductor module that can achieve a thinner profile.

[0009] Technical means for solving problems

[0010] The mounting structure of the semiconductor module provided by the present invention includes: a substrate having a main surface and a back surface facing opposite sides in the thickness direction; a semiconductor module mounted on the main surface side of the substrate; and a heat dissipation component for dissipating heat from the semiconductor module, the substrate having a through-hole in the thickness direction, the heat dissipation component having: a main body portion located on the back surface side relative to the substrate; and a protrusion housed in the through-hole, the semiconductor module being engaged with the protrusion.

[0011] Preferably, the heat dissipation component has a cooling path for the flow of cooling medium.

[0012] Preferably, the cooling path overlaps with the protrusion when viewed along the thickness direction.

[0013] Preferably, the semiconductor module has: a semiconductor element; an island portion joined to the semiconductor element; lead terminals connected to the semiconductor element; and a resin portion covering the semiconductor element.

[0014] Preferably, the island portion has an exposed surface that protrudes from the resin portion and engages with the protrusion.

[0015] Preferably, the lead terminal has a base portion protruding from the resin portion in a direction intersecting the thickness direction and a front end portion extending along the thickness direction, the front end portion penetrating the substrate.

[0016] Preferably, the front end protrudes from the back side of the substrate and is spaced apart from the heat dissipation component.

[0017] Preferably, it further includes an insulating layer between the back side of the substrate and the main body of the heat dissipation component.

[0018] Preferably, the insulating layer comprises a gel material.

[0019] Preferably, the insulating layer comprises ceramic.

[0020] Preferably, the void portion is a through hole having a closed end edge when viewed along the thickness direction.

[0021] Preferably, the gap is a notch with an open end edge when viewed along the thickness direction.

[0022] Preferably, it further includes a fixing component that fixes the substrate and the heat dissipation component at a distance.

[0023] Preferably, the protrusion has a mating surface that engages with the semiconductor module.

[0024] Preferably, the mating surface is flush with the main surface.

[0025] Preferably, the mating surface is located in the thickness direction on the side facing the main surface, which is closer to the main surface than the main surface.

[0026] Preferably, the mating surface is located within the gap in the thickness direction.

[0027] Invention Effects

[0028] According to the present invention, the mounting structure of semiconductor modules can be made thinner.

[0029] Other features and advantages of the invention will become more apparent from the following detailed description with reference to the accompanying drawings. Attached Figure Description

[0030] Figure 1 This is a perspective view showing the main parts of the mounting structure of the semiconductor module according to the first embodiment of the present invention.

[0031] Figure 2This is a top view showing the main parts of the mounting structure of the semiconductor module according to the first embodiment of the present invention.

[0032] Figure 3 It is along Figure 2 A cross-sectional view of line III-III.

[0033] Figure 4 It is along Figure 2 A cross-sectional view of the main part of line III-III.

[0034] Figure 5 It is along Figure 2 A cross-sectional view of the main part of the VV line.

[0035] Figure 6 This is an enlarged cross-sectional view showing the main parts of the mounting structure of the semiconductor module according to the first embodiment of the present invention.

[0036] Figure 7 This is an enlarged cross-sectional view of the main part of the bonding layer of the mounting structure of the semiconductor module according to the first embodiment of the present invention.

[0037] Figure 8 This is an enlarged cross-sectional view showing the main parts of the mounting structure of the semiconductor module according to the first embodiment of the present invention.

[0038] Figure 9 This is an enlarged cross-sectional view of the main part of the insulating layer of the mounting structure of the semiconductor module according to the first embodiment of the present invention.

[0039] Figure 10 This is an enlarged cross-sectional view of the main part of the insulating layer of the mounting structure of the semiconductor module according to the first embodiment of the present invention.

[0040] Figure 11 This is a top view of the main part of a first modified example of the mounting structure of the semiconductor module according to the first embodiment of the present invention.

[0041] Figure 12 This is a top view showing the main parts of the mounting structure of the semiconductor module according to the second embodiment of the present invention.

[0042] Figure 13 It is along Figure 12 A cross-sectional view of line XIII-XIII.

[0043] Figure 14 This is a top view showing the main parts of the mounting structure of the semiconductor module according to the third embodiment of the present invention.

[0044] Figure 15This is a cross-sectional view of the main part of the mounting structure of the semiconductor module according to the fourth embodiment of the present invention.

[0045] Figure 16 This is a cross-sectional view of the main part of the mounting structure of the semiconductor module according to the fifth embodiment of the present invention. Detailed Implementation

[0046] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0047] <First Embodiment>

[0048] Figures 1-10 This diagram illustrates a mounting structure for a semiconductor module according to a first embodiment of the present invention. The mounting structure A1 of this embodiment includes a substrate 1, a heat dissipation component 2, a semiconductor module 3, a bonding layer 7, an insulating layer 8, and a fixing component 9. The semiconductor module mounting structure A1 is used, for example, in the power supply unit of an automobile.

[0049] Figure 1 This is a three-dimensional view showing the main parts of the mounting structure A1 of the semiconductor module. Figure 2 This is a top view showing the main part of the mounting structure A1 of the semiconductor module. Figure 3 It is along Figure 2 A cross-sectional view of line III-III. Figure 4 It is along Figure 2 A cross-sectional view of the main part of line III-III. Figure 5 It is along Figure 2 A cross-sectional view of the main part of the VV line. Figure 6 This is an enlarged cross-sectional view of the main part of the mounting structure A1 of the semiconductor module. Figure 7 This is an enlarged cross-sectional view of the main part of the first modified example of the bonding layer of the mounting structure A1 of the semiconductor module. Figure 8 This is an enlarged cross-sectional view of the main part of the mounting structure A1 of the semiconductor module. Figure 9 This is an enlarged cross-sectional view of the main part of the first modified example of the insulating layer of the mounting structure A1 of the semiconductor module. Figure 10 These are enlarged cross-sectional views of the main portion of the insulating layer in a second variation of the mounting structure A1 of the semiconductor module. In these views, the z-direction corresponds to the thickness direction of the invention. The x-direction and y-direction are right angles to each other and to each other relative to the z-direction.

[0050] The substrate 1 has a main surface 11 and a back surface 12 facing opposite sides in the z-direction. The substrate 1 has a main material, for example, made of glass epoxy resin, and a wiring pattern (not shown) formed on the main material. Connectors and terminals (not shown) for external connection are suitably provided on the substrate 1.

[0051] exist Figure 3 In the example shown, a semiconductor module 3 and multiple electronic components 300 are mounted on the main surface 11 side of the substrate 1. Other electronic components may also be further mounted on the back surface 12 side of the substrate 1.

[0052] The substrate 1 has a void portion 15. For example... Figure 4 and Figure 5 As shown, the gap 15 penetrates the substrate 1 in the z-direction. The shape and position of the gap 15 are not particularly limited. Figure 2 As shown, in this embodiment, the gap 15 is a through hole with a closed end edge when viewed along the z-direction. The shape of the gap 15 when viewed along the z-direction can be, for example, rectangular, polygonal, circular, or elliptical; in the example shown, it is rectangular.

[0053] Heat sink 2 is a component used to dissipate heat from semiconductor module 3. The material of heat sink 2 is not particularly limited; for example, metals such as aluminum and stainless steel can be used. Figures 3-5 As shown, the heat dissipation component 2 of this embodiment has a main body 21 and a protrusion 22. The main body 21 is located on the back side 12 of the substrate 1, and in the illustrated example, it is a plate-shaped portion that extends in the x and y directions.

[0054] The protrusion 22 protrudes from the main body 21 in the z-direction. At least a portion of the protrusion 22 is housed in the gap 15 of the substrate 1. The shape and size of the protrusion 22 are not particularly limited. In the illustrated example, such as... Figure 2 As shown, the protrusion 22 is rectangular in shape when viewed along the z-direction and is pressed into the gap 15. The protrusion 22 has a mating surface 221. The mating surface 221 is a plane perpendicular to the z-direction. In this embodiment, the mating surface 221 is flush (or substantially flush) with the main surface 11 of the substrate 1.

[0055] The heat dissipation component 2 has a cooling path 25. The cooling path 25 is a flow path for allowing a cooling medium that helps dissipate heat from the semiconductor module 3 to flow. The cooling medium is not particularly limited and can include liquids such as water and oil, and gases such as air and nitrogen. In the illustrated example, a portion of the cooling path 25 overlaps with the protrusion 22 when viewed along the z-direction.

[0056] The fixing member 9 secures the substrate 1 and the main body 21 of the heat dissipation member 2 with a gap between them. The specific structure of the fixing member 9 is not particularly limited; in this embodiment, for example… Figure 3As shown, the fixing member 9 consists of a screw 91 and a spacer 92. The spacer 92 is located between the back surface 12 of the substrate 1 and the main body 21 of the heat dissipation member 2, and is, for example, a ring-shaped member made of resin or the like. The screw 91, for example, is inserted through the substrate 1 and the spacer 92, and engages with a threaded hole provided in the main body 21 of the heat dissipation member 2, thereby fixing the substrate 1 and the heat dissipation member 2 to each other.

[0057] The semiconductor module 3 is mounted on the substrate 1. The semiconductor module 3 includes a semiconductor element 4, leads 51, 52 and 53, wires 48 and 49, and a resin part 6.

[0058] Semiconductor element 4 is an electronic component that serves as the central hub for the function of semiconductor module 3. In this embodiment, semiconductor element 4 is a power semiconductor element such as a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor). Semiconductor element 4 is not limited to these; it can also be other transistors, various diodes, various thyristors, or even an IC chip such as a control IC. In this embodiment, semiconductor element 4 is rectangular when viewed in the z-direction, but the invention is not limited to this. Semiconductor element 4 has a main surface 41, a back surface 42, a back electrode 45, a main surface electrode 43, and a main surface electrode 44.

[0059] Semiconductor element 4 is made of semiconductor materials such as Si, SiC, and GaN. The main surface 41 of the element faces the z1 direction. The back surface 42 of the element faces the z2 direction. In this embodiment, the main surface 41 and the back surface 42 of the element are flat.

[0060] The back electrode 45, main electrode 43, and main electrode 44 are each formed by a plating layer of, for example, Cu, Ni, Al, Au, etc. When the semiconductor element 4 is a power MOSFET, for example, the back electrode 45 is the drain electrode, the main electrode 43 is the gate electrode, and the main electrode 44 is the source electrode. When the semiconductor element 4 is an IGBT, for example, the back electrode 45 is the collector electrode, the main electrode 43 is the gate electrode, and the main electrode 44 is the emitter electrode.

[0061] In this embodiment, a back electrode 45 is formed on the back surface 42 of the component. The back electrode 45 is rectangular when viewed in the z-direction. The entire edge of the back electrode 45 when viewed in the z-direction coincides with the edge of the back surface 42 of the component when viewed in the z-direction. The back electrode 45 covers the entire back surface 42 of the component.

[0062] In this embodiment, main surface electrode 43 and main surface electrode 44 are formed on the main surface 41 of the component. The area of ​​main surface electrode 43 is smaller than the area of ​​main surface electrode 44. Main surface electrode 43 is connected to wire 48, and main surface electrode 44 is connected to a plurality of wires 49.

[0063] Leads 51, 52, and 53 are made of a conductive material. For example, Cu can be used as such a conductive material. Leads 51, 52, and 53 form a conductive path between the semiconductor element 4 and the substrate 1 by bonding with the substrate 1. The number of leads in the semiconductor module is not limited to three; it can be two or more. The number of leads is appropriately set, for example, depending on the type of semiconductor element 4.

[0064] The lead 51 includes an island 511 and a lead terminal 512.

[0065] Island 511 is the part that mounts semiconductor element 4. Island 511 has mounting surface 5111 and exposed surface 5112.

[0066] The mounting surface 5111 faces the z-direction. The entire surface of the mounting surface 5111 is flat. Unlike the illustrated example, the island portion 511 may also have a recess, groove, or through hole recessed from the mounting surface 5111. A plating layer made of, for example, Ag (not shown) may also be formed on the mounting surface 5111. In this embodiment, for example, the back electrode 45 of the semiconductor element 4 is electrically bonded to the mounting surface 5111 by a conductive bonding material 47. The conductive bonding material 47 is, for example, solder, Ag paste, Ag sintered material, or Cu sintered material.

[0067] The exposed surface 5112 faces the opposite direction in the z-direction. The entire surface of the exposed surface 5112 is flat. The exposed surface 5112 is exposed from the resin part 6, covering the entire surface.

[0068] The lead terminal 512 is electrically connected to the back electrode 45 of the semiconductor element 4 via the island portion 511 and the wire 49. The lead terminal 512 has a base portion 5121 and a front portion 5122. The base portion 5121 protrudes from the resin end face 63 of the resin portion 6 along the y direction, which is one of the directions intersecting the z direction. The front portion 5122 is connected to the front end of the base portion 5121 and extends along the z direction. The front portion 5122 is inserted into the substrate 1 and protrudes toward the back surface 12. The protruding portion of the front portion 5122 is electrically bonded to the substrate 1, for example, by solder 59.

[0069] like Figure 1 As shown, lead 52 includes pad portion 521 and lead terminal 522.

[0070] The x-direction dimension of the pad portion 521 is longer than that of the lead terminal 522. The pad portion 521 is completely covered by the resin portion 6. Figure 1and Figure 2 As shown, a wire 48 is connected to the pad portion 521.

[0071] like Figure 1 As shown, the lead terminal 522 has a base 5221 and a front end 5222. The base 5221 protrudes from the resin end face 63 of the resin portion 6 along a direction intersecting the z-direction (y-direction). The front end 5222 is connected to the front end of the base 5221 and extends along the z-direction. The front end 5222 is inserted into the substrate 1 and protrudes toward the back surface 12. The protruding portion of the front end 5222 is electrically bonded to the substrate 1, for example, by solder 59.

[0072] The lead 53 includes a pad portion 531 and a lead terminal 532.

[0073] like Figure 1 and Figure 2 As shown, the x-direction dimension of the pad portion 531 is longer than that of the lead terminal 532. The pad portion 531 is completely covered by the resin portion 6. Figure 1 and Figure 2 As shown, multiple wires 49 are connected to the pad portion 531.

[0074] like Figure 1 As shown, the lead terminal 532 has a base 5321 and a front end 5322. The base 5321 protrudes from the resin end face 63 of the resin portion 6 along a direction intersecting the z-direction (y-direction). The front end 5322 is connected to the front end of the base 5321 and extends along the z-direction. The front end 5322 is inserted into the substrate 1 and protrudes towards the back surface 12. The protruding portion of the front end 5322 is electrically bonded to the substrate 1, for example, by solder 59.

[0075] Leads 51, 52, and 53 are spaced apart from each other. The lead terminal 512 of lead 51 is positioned in the x-direction between the lead terminal 522 of lead 52 and the lead terminal 532 of lead 53. The portions of lead terminals 512, 522, and 532 exposed from the resin portion 6 may also be covered with a plating of a metal such as Ag (not shown).

[0076] like Figure 1 and Figure 2 As shown, one end of the wire 48 is bonded to the pad portion 521, and the other end is bonded to the semiconductor element 4 (main electrode 43). The wire 48 makes the pad portion 521 and the main electrode 43 conductive. In this embodiment, the main material of the wire 48 is gold (Au). It is not limited to this, and for example, it can also be aluminum (Al) or copper (Cu). Instead of the linear wire 48, other components such as a wide strip wire or a clamping component made of metal such as Cu can also be used.

[0077] Multiple conductors 49 respectively, as follows Figure 2 and Figure 3 As shown, one end is bonded to the pad portion 531, and the other end is bonded to the semiconductor element 4 (main surface electrode 44). Each wire 49 connects the pad portion 531 and the main surface electrode 44. In this embodiment, the main material of each wire 49 is aluminum (Al). It is not limited to this; for example, it can also be gold (Au) or copper (Cu). In this embodiment, the semiconductor module 3 includes two wires 49, but the number of wires 49 is not limited to this. The number of wires 49 can also be one. The wire diameter of the wire 49 is larger than the wire diameter of the wire 48. Instead of the linear wires 49, other components such as wide strips or clamping parts made of metals such as Cu can also be used.

[0078] The material, number of wires, and diameter of wires 48 and 49 can be appropriately designed by taking into account the current flowing through them.

[0079] The resin portion 6 is a component that covers a portion of the semiconductor element 4, leads 51, 52, and 53, wires 48, and a plurality of wires 49. The resin portion 6 is made of a thermosetting synthetic resin with electrical insulating properties. In this embodiment, the resin portion 6 is made of black epoxy resin. The resin portion 6 has a resin main surface 61, a resin back surface 62, a pair of resin end surfaces 63, and a pair of resin side surfaces 64.

[0080] like Figure 1 , Figure 4 and Figure 5 As shown, the resin main surface 61 faces the z-direction. Figure 1 , Figure 4 and Figure 5 As shown, the resin back side 62 faces the other side in the z direction.

[0081] like Figure 2 and Figure 4 As shown, a pair of resin end faces 63 are spaced apart from each other in the y-direction. The pair of resin end faces 63 face opposite sides in the y-direction. Figure 4 As shown, one end of each pair of resin end faces 63 in the z-direction is connected to the resin main surface 61, and the other end in the z-direction is connected to the resin back surface 62. In this embodiment, a portion of each of the leads 51 (lead terminal 512), 52 (lead terminal 522), and 53 (lead terminal 532) protrudes from one resin end face 63.

[0082] like Figure 5 As shown, a pair of resin side surfaces 64 are spaced apart from each other in the x-direction. The pair of resin side surfaces 64 face opposite sides in the x-direction. One end of each pair of resin side surfaces 64 in the z-direction is connected to the resin main surface 61, and the other end in the z-direction is connected to the resin back surface 62.

[0083] like Figure 4 and Figure 5 As shown, the bonding layer 7 bonds the semiconductor module 3 to the heat dissipation component 2. In this embodiment, the bonding layer 7 bonds the exposed surface 5112 of the island portion 511 of the lead 51 of the semiconductor module 3 to the bonding surface 221 of the protrusion 22 of the heat dissipation component 2.

[0084] The specific structure of the bonding layer 7 is not particularly limited. The bonding layer 7 can be a conductive material or an insulating material. In this embodiment, the lead 51 that is conductive to the back electrode 45 of the semiconductor element 4 is preferably insulated from the heat dissipation component 2, and the bonding layer 7 is made of an insulating material.

[0085] Figure 6 This illustrates an example of bonding layer 7. In the illustrated example, bonding layer 7 is composed of a gel layer 71, such as an insulating gel material or a lubricating grease.

[0086] Figure 7 This illustrates a first variation of the bonding layer 7. In the illustrated example, the bonding layer 7 has a gel layer 71 and a sheet layer 72. The sheet layer 72 is made of an insulating material, such as ceramic. In the illustrated example, the gel layer 71 is provided on both sides of the sheet layer 72.

[0087] An insulating layer 8 is located between the substrate 1 and the main body 21 of the heat dissipation component 2. The insulating layer 8 is used to insulate the wiring pattern (not shown), lead 51 (lead terminal 512), lead 52 (lead terminal 522) and lead 53 (lead terminal 532) of the substrate 1 from the heat dissipation component 2.

[0088] Figure 8 This illustrates an example of insulating layer 8. In the illustrated example, insulating layer 8 is composed of a gel layer 81 of an insulating gel material, grease, etc.

[0089] Figure 9 This illustrates a first variation of the insulating layer 8. In the illustrated example, the insulating layer 8 has a gel layer 81 and a sheet layer 82. The sheet layer 82 is made of an insulating material such as ceramic. In the illustrated example, the gel layer 81 is provided between the sheet layer 82 and the main body 21.

[0090] Figure 10 This illustrates a second variation of the insulating layer 8. In the illustrated example, the insulating layer 8 has a sheet 82 and no gel layer 81 is provided. The sheet 82 is disposed, for example, along the main body 21 and spaced apart from the leads 51 (lead terminal 512), leads 52 (lead terminal 522), and leads 53 (lead terminal 532).

[0091] Next, the function and effect of the semiconductor module mounting structure A1 will be explained.

[0092] According to this embodiment, the semiconductor module 3 is joined to the protrusion 22 of the heat dissipation member 2 housed in the gap 15 of the substrate 1. Therefore, the heat dissipation member 2 does not need to be provided in a posture that, for example, stands upright from the substrate 1 in the z direction, and can be formed as a whole into a shape that extends in both the x and y directions. Therefore, it is possible to achieve a thinner profile in the z direction of the mounting structure A1 of the semiconductor module.

[0093] A cooling path 25 is provided in the heat dissipation component 2. By allowing water or the like as a cooling medium to flow in the cooling path 25, heat dissipation from the semiconductor module 3 can be promoted. The cooling path 25 overlaps with the protrusion 22 when viewed along the z-direction. This is preferable for efficiently dissipating heat transferred from the semiconductor module 3 to the protrusion 22.

[0094] In the semiconductor module 3, a semiconductor element 4 is mounted on the island portion 511 of the lead 51. The exposed surface 5112 of the island portion 511 is exposed from the resin portion 6 and is bonded to the bonding surface 221 of the protrusion 22 of the heat dissipation component 2 via the bonding layer 7. As a result, heat from the semiconductor module 3 can be dissipated to the protrusion 22 more efficiently.

[0095] When the bonding layer 7 includes a gel layer 71, for example, when there are minor irregularities on the exposed surface 5112 and the bonding surface 221, the gel layer 71 can be used to fill these irregularities. This is preferred for promoting heat dissipation from the semiconductor module 3. When the bonding layer 7 includes a sheet layer 72, this is preferred for improving the strength and insulation withstand voltage of the bonding layer 7.

[0096] Lead terminal 512 has a base 5121 and a front end 5122. This allows the semiconductor module 3 to be mounted on the substrate 1 with the front end 5122 passing through the semiconductor element 4, and allows the island portion 511 and the resin portion 6 to be positioned along the substrate 1 (along the x and y directions). This is preferable for achieving a thinner semiconductor module mounting structure A1. Lead terminal 522 has a base 5221 and a front end 5222, and lead terminal 532 has a base 5321 and a front end 5322, thus achieving the same effect.

[0097] An insulating layer 8 is sandwiched between the back surface 12 of the substrate 1 and the main body 21 of the heat sink 2. This prevents improper electrical connection between the substrate 1 and the heat sink 2. Furthermore, compared to a situation where there is only a gap (air) between the back surface 12 of the substrate 1 and the main body 21 of the heat sink 2, the insulating layer 8 allows the distance between the back surface 12 and the main body 21 to be reduced. This is preferable for achieving a thinner mounting structure A1 for the semiconductor module.

[0098] When the insulating layer 8 includes a gel layer 81, for example, when the substrate 1 and the main body 21 have uneven shapes, the gel layer 81 can fill in these uneven shapes. This is preferable for making the substrate 1 more reliably insulated from the heat dissipation component 2. When the insulating layer 8 includes a sheet layer 82, this is preferable for improving the strength and dielectric strength of the insulating layer 8.

[0099] The gap 15 has a closed edge shape when viewed along the z-direction. That is, the gap 15 can be positioned away from the edge of the substrate 1. This has the advantage of allowing for more flexible positioning of the semiconductor module 3 in the substrate 1 (semiconductor module mounting structure A1).

[0100] Figures 11-16 These figures illustrate variations and other embodiments of the invention. In these figures, elements that are the same as or similar to those in the above embodiments are labeled with the same reference numerals as those in the above embodiments.

[0101] <First Embodiment, First Modification>

[0102] Figure 11 This represents a first variation of the mounting structure A1 for a semiconductor module. In this example of the mounting structure A11 for the semiconductor module, the shape of the gap 15 differs from the example described above.

[0103] In this example, the gap 15 has multiple abutment portions 151 and multiple recesses 152. The multiple abutment portions 151 abut against the protrusions 22 of the heat dissipation component 2. The multiple recesses 152 are alternately arranged with the multiple abutment portions 151. When viewed along the z-direction, the recesses 152 are recessed towards the side away from the protrusions 22. Such a gap 15 can be formed, for example, by providing multiple through holes in an insulating plate that forms the substrate 1, and removing a portion of the insulating plate along these through holes.

[0104] As can be seen from this example, the specific structure of the gap 15 is not particularly limited. The structure of this example can be appropriately adopted in other embodiments.

[0105] <Second Implementation>

[0106] Figure 12 and Figure 13 This illustrates the mounting structure of a semiconductor module according to a second embodiment of the present invention. The structure of the gap 15 and the protrusion 22 in the mounting structure A2 of the semiconductor module in this embodiment differs from that in the first embodiment described above.

[0107] In this embodiment, the gap 15 is a notch with an open end edge when viewed along the z-direction. More specifically, the gap 15 is a shape that is recessed inward along the y-direction from the end edge of the substrate 1 when viewed along the z-direction.

[0108] A portion of the protrusion 22 is housed within the gap 15. In the illustrated example, a portion of the protrusion 22 protrudes from the gap 15 in the y-direction. Unlike the illustrated example, there could also be a structure where the protrusion 22 is entirely housed within the gap 15 when viewed along the z-direction.

[0109] According to this embodiment, the mounting structure A2 of the semiconductor module can also be made thinner. As can be seen from this embodiment, the specific structure of the gap 15 and the protrusion 22 is not particularly limited.

[0110] <Third Implementation>

[0111] Figure 14 This illustrates the mounting structure of a semiconductor module according to a third embodiment of the present invention. The structure of the gap 15 and the protrusion 22 in the mounting structure A3 of this embodiment differs from those in the embodiments described above.

[0112] In this embodiment, the gap 15 is a notch with an open end edge when viewed along the z-direction. More specifically, in this embodiment, the gap 15 is a shape that is recessed inward in the x and y directions when viewed along the z-direction from the two end edges of the substrate 1.

[0113] A portion of the protrusion 22 is housed within the gap 15. In the illustrated example, a portion of the protrusion 22 protrudes from the gap 15 in both the x and y directions. Unlike the illustrated example, the structure could also be such that the protrusion 22 is entirely housed within the gap 15 when viewed along the z-direction. Alternatively, when viewed along the z-direction, the entire x-direction or the entire y-direction of the protrusion 22 is housed within the gap 15.

[0114] According to this embodiment, the mounting structure A3 of the semiconductor module can also be made thinner. As can be seen from this embodiment, the specific structure of the gap 15 and the protrusion 22 is not particularly limited.

[0115] <Fourth Implementation>

[0116] Figure 15 This illustrates the mounting structure of a semiconductor module according to the fourth embodiment of the present invention. The main difference between the mounting structure A4 of this embodiment and the previous embodiment lies in the structure of the protrusion 22 of the heat dissipation component 2.

[0117] In this embodiment, the mating surface 221 of the protrusion 22 is located within the gap 15 in the z-direction. That is, the mating surface 221 is located on the back surface 12 side of the main surface 11 of the substrate 1.

[0118] In this embodiment, when viewed along the z-direction, the resin portion 6 is smaller than the void portion 15 and the bonding surface 221. A portion of the semiconductor module 3, including the exposed surface 5112, is housed in the void portion 15 in the z-direction.

[0119] According to this embodiment, the mounting structure A4 of the semiconductor module can also be made thinner. Furthermore, the distance between the semiconductor module 3 and the cooling path 25 can be further reduced, which is beneficial for heat dissipation of the semiconductor module 3. By housing a portion of the semiconductor module 3 in the gap 15, the mounting structure A4 of the semiconductor module can also be made thinner.

[0120] <Fifth Implementation>

[0121] Figure 16 This illustrates the mounting structure of a semiconductor module according to the fifth embodiment of the present invention. The main difference between the mounting structure A5 of this embodiment and the previous embodiment lies in the structure of the protrusion 22 of the heat dissipation component 2.

[0122] In this embodiment, the mating surface 221 is located in the z-direction on the side facing the main surface 11, which is further away from the main surface 11. In the illustrated example, when viewed along the z-direction, the gap 15 and the protrusion 22 are smaller than the resin portion 6.

[0123] According to this embodiment, the mounting structure A5 of the semiconductor module can also be made thinner. Furthermore, by reducing the size of the gap 15 and the protrusion 22 when viewed along the z-direction, the mounting structure A5 of the semiconductor module can be miniaturized when viewed along the z-direction.

[0124] The mounting structure of the semiconductor module according to the present invention is not limited to the embodiments and variations described above. Various design modifications can be freely made to the specific configuration of each part of the mounting structure of the semiconductor module according to the present invention.

[0125] Postscript 1.

[0126] A mounting structure for a semiconductor module, comprising:

[0127] A substrate having a front side and a back side that face opposite each other in the thickness direction;

[0128] A semiconductor module mounted on the main surface side of the substrate; and

[0129] A heat dissipation component that dissipates heat from the semiconductor module.

[0130] The substrate has a void extending through the thickness direction.

[0131] The heat dissipation component has: a main body portion located on the back side relative to the substrate; and a protrusion portion housed in the gap portion.

[0132] The semiconductor module is engaged with the protrusion.

[0133] Postscript 2.

[0134] According to the semiconductor module mounting structure described in Appendix 1, the heat dissipation component has a cooling path for the flow of cooling medium.

[0135] Postscript 3.

[0136] According to the semiconductor module mounting structure described in Appendix 2, the cooling path overlaps with the protrusion when viewed along the thickness direction.

[0137] Appendix 4.

[0138] According to any one of Appendices 1 to 3, the semiconductor module mounting structure comprises: a semiconductor element; an island portion joined to the semiconductor element; lead terminals connected to the semiconductor element; and a resin portion covering the semiconductor element.

[0139] Postscript 5.

[0140] According to the semiconductor module mounting structure described in Appendix 4, the island portion has an exposed surface that protrudes from the resin portion, and the exposed surface engages with the protrusion.

[0141] Postscript 6.

[0142] According to the semiconductor module mounting structure described in Appendix 5, the lead terminal has a base protruding from the resin portion in a direction intersecting the thickness direction and a front end portion along the thickness direction.

[0143] The front end extends through the substrate.

[0144] Postscript 7.

[0145] According to the mounting structure of the semiconductor module described in Appendix 6, the front end protrudes from the back side of the substrate and is spaced apart from the heat dissipation component.

[0146] Postscript 8.

[0147] The mounting structure of the semiconductor module according to any one of Appendices 1 to 7 further includes an insulating layer between the back side of the substrate and the main body of the heat dissipation component.

[0148] Postscript 9.

[0149] According to the mounting structure of the semiconductor module described in Appendix 8, the insulating layer comprises a gel material.

[0150] Postscript 10.

[0151] According to the mounting structure of the semiconductor module described in Appendix 8 or 9, the insulating layer comprises ceramic.

[0152] Postscript 11.

[0153] According to any one of the appendices 1 to 10, the mounting structure of the semiconductor module, wherein the gap is a through hole having a closed end edge when viewed along the thickness direction.

[0154] Postscript 12.

[0155] According to any one of the appendices 1 to 10, the mounting structure of the semiconductor module, wherein the gap is a notch having an open end edge when viewed along the thickness direction.

[0156] Postscript 13.

[0157] The mounting structure of the semiconductor module according to any one of Appendices 1 to 12 further includes a fixing component for fixing the substrate and the heat dissipation component at a distance.

[0158] Postscript 14.

[0159] According to any one of Appendices 1 to 13, the mounting structure of the semiconductor module, wherein the protrusion has a mating surface that engages with the semiconductor module.

[0160] Postscript 15.

[0161] According to the semiconductor module mounting structure described in Appendix 14, the bonding surface is flush with the main surface.

[0162] Postscript 16.

[0163] According to the mounting structure of the semiconductor module described in Appendix 14, the bonding surface is located in the thickness direction on the side facing the main surface, which is closer to the main surface than the main surface.

[0164] Postscript 17.

[0165] According to the semiconductor module mounting structure described in Appendix 14, the bonding surface is located within the gap in the thickness direction.

[0166] Explanation of reference numerals in the attached figures

[0167] A1, A11, A2, A3, A4, A5: Installation structure,

[0168] 1: Substrate, 2: Heat dissipation component, 3: Semiconductor module

[0169] 4: Semiconductor element; 6: Resin portion; 7: Bonding layer.

[0170] 8: Insulation layer, 9: Fixing component, 11: Main surface,

[0171] 12: Back side, 15: Gap, 21: Main body

[0172] 22: Protrusion, 25: Cooling path, 41: Component main surface

[0173] 42: Back side of component; 43, 44: Main electrode; 45: Back electrode.

[0174] 47: Conductive bonding material; 48, 49: Conductors;

[0175] 51, 52, 53: Lead wires; 59: Solder; 61: Resin main surface.

[0176] 62: Back side of resin, 63: End face of resin, 64: Side side of resin,

[0177] 71: Gel layer, 72: Sheet layer, 81: Gel layer

[0178] 82: Sheet, 91: Screw, 92: Spacer

[0179] 151: Contact portion, 152: Recessed portion, 221: Joint surface,

[0180] 300: Electronic components; 511: Island section;

[0181] 512: Lead terminal; 521: Pad portion.

[0182] 522: Lead terminal, 531: Pad portion

[0183] 532: Lead terminal; 5111: Mounting surface;

[0184] 5112: Exposed surface, 5121: Base, 5122: Front end,

[0185] 5221: base, 5222: anterior end.

[0186] 5321: base; 5322: front end.

Claims

1. A mounting structure for a semiconductor module, characterized in that, include: A substrate having a front side and a back side that are oriented opposite to each other in the thickness direction; A semiconductor module, which is mounted on the main surface side of the substrate; as well as A heat dissipation component that dissipates heat from the semiconductor module. The substrate has a void extending through the thickness direction. The heat dissipation component has: a main body portion located on the back side relative to the substrate; and a protrusion portion housed in the gap portion. The semiconductor module is engaged with the protrusion. The semiconductor module includes: a semiconductor element; lead terminals that are conductive to the semiconductor element; and a resin portion covering the semiconductor element. The lead terminal has a base protruding from the resin portion in a direction intersecting the thickness direction and a front end portion along the thickness direction. The front end portion extends through the substrate and protrudes from the back side of the substrate, and is spaced apart from the heat dissipation component. The mounting structure of the semiconductor module also includes an insulating layer between the back side of the substrate and the main body of the heat dissipation component. At least a portion of the insulating layer is located between the front end portion and the main body portion of the heat dissipation component, and is in contact with the back side of the substrate. The portion of the front end that protrudes from the back side of the substrate is electrically bonded to the substrate by solder. The portion of the front end that protrudes from the back side of the substrate and the solder are located within the insulating layer.

2. The mounting structure of the semiconductor module as described in claim 1, characterized in that: The heat dissipation component has a cooling path for the flow of cooling medium.

3. The mounting structure of the semiconductor module as described in claim 2, characterized in that: The cooling path overlaps with the protrusion when viewed along the thickness direction.

4. The mounting structure of the semiconductor module as described in any one of claims 1 to 3, characterized in that: The semiconductor module has an island portion that is coupled to the semiconductor element.

5. The mounting structure of the semiconductor module as described in claim 4, characterized in that: The island portion has an exposed surface that protrudes from the resin portion, and the exposed surface engages with the protrusion.

6. The mounting structure of the semiconductor module as described in any one of claims 1 to 3, characterized in that: The insulating layer comprises a gel material.

7. The mounting structure of the semiconductor module as described in any one of claims 1 to 3, characterized in that: The insulating layer comprises ceramic.

8. The mounting structure of the semiconductor module as described in any one of claims 1 to 3, characterized in that: The void portion is a through hole with a closed end edge when viewed along the thickness direction.

9. The mounting structure of the semiconductor module as described in any one of claims 1 to 3, characterized in that: The gap is a notch with an open end edge when viewed along the thickness direction.

10. The mounting structure of the semiconductor module as described in any one of claims 1 to 3, characterized in that: It also includes a fixing component that fixes the substrate and the heat dissipation component in a spaced manner.

11. The mounting structure of the semiconductor module as described in any one of claims 1 to 3, characterized in that: The protrusion has a mating surface that engages with the semiconductor module.

12. The mounting structure of the semiconductor module as described in claim 11, characterized in that: The mating surface is flush with the main surface.

13. The mounting structure of the semiconductor module as described in claim 11, characterized in that: The mating surface is located in the thickness direction on the side that the main surface faces, which is closer to the main surface.

14. The mounting structure of the semiconductor module as described in claim 11, characterized in that: The mating surface is located within the gap in the thickness direction.

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