Driver circuit for phase change memory cells and corresponding method

By introducing current modulation and compensation current generators into the driver circuit of the phase change memory cell, the programming current overshoot problem is solved, and an efficient and reliable phase change memory writing process is realized.

CN115691611BActive Publication Date: 2026-07-03STMICROELECTRONICS SRL
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
STMICROELECTRONICS SRL
Filing Date
2022-07-25
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

The coupling effect between the conventional driver circuit and the phase-change memory cell can cause programming current overshoot events, which can impair the writing process of the phase-change memory cell.

Method used

A driver circuit design that includes a current-modulated transistor and a current generator circuit is adopted to reduce programming current overshoot by compensating for the current-modulated programming current pulse.

Benefits of technology

It effectively reduces programming current overshoot, improves the reliability and efficiency of the phase-change memory writing process, and avoids data loss.

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Abstract

Embodiments of this disclosure relate to driver circuitry and corresponding methods for phase-change memory (PCM) cells. A circuit includes a plurality of memory cells, each memory cell comprising: a PCM storage element coupled in series with a corresponding current-modulated transistor between a supply voltage node and a reference voltage node, the current-modulated transistor being configured to receive a drive signal at a control terminal and inject a corresponding programming current into the corresponding PCM storage element according to the drive signal; a driver circuit configured to generate a drive signal at a common control node, wherein the common control node is coupled to a control terminal of the current-modulated transistor. The drive signal modulates the programming current to generate SET programming current pulses and RESET programming current pulses; and at least one current generator circuit configured to inject a compensation current into the common control node in response to the current-modulated transistor injecting the programming current into the corresponding PCM storage element.
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Citation Information

Patent Citations

  • Programming memory with sensing-based bit line compensation to reduce channel -to-floating gate coupling

    CN102714055A

  • Write driver, resistance variable memory apparatus including the same, and operation method

    CN105321560A