Temperature control shield for an evaporation source, material deposition apparatus and method for depositing a material on a substrate

Abstract

Describes a temperature control shield for an evaporation source. The temperature control shield is configured to provide a preheating zone or a post-cooling zone.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to coating a substrate by thermal evaporation in a vacuum chamber. Embodiments of the present disclosure further relate to material deposition of an evaporation material on a substrate. Embodiments also relate to temperature-controlled deposition of a material on a substrate. Background Art

[0002] Various techniques for deposition on a substrate are known, such as chemical vapor deposition (CVD) and physical vapor deposition (PVD). For deposition at a high deposition rate, thermal evaporation can be used as a PVD process. For thermal evaporation, the source material is heated to produce a vapor that can be deposited on, for example, a substrate. Raising the temperature of the heating source material increases the vapor concentration and can be beneficial for a high deposition rate. The temperature to achieve a high deposition rate depends on the physical properties of the source material, such as the vapor pressure as a function of temperature; and the physical limit values of the substrate, such as the melting point.

[0003] For example, the material to be deposited on a substrate can be heated in a crucible to produce a vapor at an elevated vapor pressure. The vapor can be transported from the crucible to a heated vapor distributor having a plurality of nozzles. The vapor can be directed by one or more nozzles onto a substrate in a coating volume (such as in a vacuum chamber).

[0004] Depositing a metal (such as lithium) on a flexible substrate (such as a copper substrate) by evaporation can be used to manufacture a battery, such as a lithium battery. For example, a lithium layer can be deposited on a thin flexible substrate for producing an anode of a battery. After assembling an anode layer stack and a cathode layer stack, optionally with an electrolyte and / or separator therebetween, the manufactured layer arrangement can be rolled up or otherwise stacked to produce a lithium battery.

[0005] The surface of a component (such as the vacuum chamber wall of a vacuum chamber) can be exposed to the vapor and can be coated. Frequent maintenance to remove condensate is impractical for high-volume manufacturing (such as roll coating on a thin foil). In addition, if the components of the vacuum chamber are different from the substrate to be coated, expensive coating materials may be wasted.

[0006] In addition, the material to be deposited is heated to a high temperature, thereby providing a high heat load to the substrate to be coated. However, the high temperature can have a negative impact on the substrate. Therefore, it is beneficial to provide an improved material deposition apparatus to at least partially overcome the problems in this technology. Summary of the Invention

[0007] According to one embodiment, a temperature control shield for an evaporation source is provided. The temperature control shield is configured to provide a preheating zone or a post-cooling zone.

[0008] According to one embodiment, there is provided a material deposition apparatus for depositing an evaporation material onto a substrate. The material deposition apparatus includes one or more temperature control shields according to embodiments of the present disclosure.

[0009] According to one embodiment, there is provided a material deposition apparatus for depositing an evaporation material onto a substrate. The material deposition apparatus includes an evaporation source for providing the evaporation material to the substrate, the evaporation source having a first end and a second end opposite the first end, and a surface therebetween having a length; and one or more temperature control shields disposed at at least one of the first end or the second end of the evaporation source, the one or more temperature control shields extending outwardly from the evaporation source, wherein the one or more temperature control shields provide a width of at least 20% of the surface length between the first end and the second end of the evaporation source.

[0010] According to one embodiment, there is provided a material deposition apparatus for depositing an evaporation material onto a substrate. The material deposition apparatus includes: an evaporation source for providing the evaporation material to the substrate, the evaporation source having a first end and a second end opposite the first end; and one or more temperature control shields disposed at at least one of the first end or the second end of the evaporation source, the one or more temperature control shields extending outwardly from the evaporation source at a wide angle.

[0011] According to one embodiment, there is provided a material deposition apparatus for depositing an evaporation material onto a substrate. The material deposition apparatus includes: a substrate conveyance device for conveying the substrate along a substrate conveyance direction; and at least two evaporation sources for providing the evaporation material to the substrate along the substrate conveyance direction, the at least two evaporation sources each including one or more asymmetric temperature control shields.

[0012] According to one embodiment, there is provided an evaporation source for providing an evaporation material to a substrate in a vacuum chamber. The evaporation source includes a nozzle assembly shield having a plurality of nozzles arranged in at least one row, the row including two outermost nozzles, wherein the two outermost nozzles are inclined in different directions.

[0013] According to one embodiment, an evaporation source for supplying an evaporation material to a substrate in a vacuum chamber is provided. The evaporation source includes a nozzle assembly shield having a first end and a second end, and a surface facing the substrate between the first end and the second end. The nozzle assembly shield has a plurality of openings arranged in at least one row at the surface between the first end and the second end. The at least one row has a first outermost opening disposed adjacent to the first end and a second outermost opening disposed adjacent to the second end. And a plurality of nozzles extending through the plurality of openings, wherein the plurality of nozzles include a first outermost nozzle extending through the first outermost opening and a second outermost nozzle extending through the second outermost opening. The first outermost nozzle and the second outermost nozzle are inclined at an angle with respect to the surface between the first end and the second end.

[0014] According to one embodiment, a method for depositing a material onto a substrate in a vacuum chamber is provided. The method includes evaporating a material in an evaporation source having a vapor emission region; and directing the evaporated material toward a substrate region through a temperature control shield, the substrate region being larger than the vapor emission region.

[0015] According to one embodiment, a method for manufacturing a battery anode is provided. The method for manufacturing a battery anode includes the method for depositing a material onto a substrate in a vacuum chamber according to any of the embodiments described herein.

[0016] According to one embodiment, a method for manufacturing a battery anode is provided. The method includes guiding a web including or consisting of an anode layer in a material deposition apparatus according to an embodiment of the present disclosure; and depositing a lithium-containing material or lithium on the web using a chemical vapor deposition apparatus.

[0017] Embodiments also relate to apparatuses for performing the disclosed methods and include apparatus components for performing each of the described method aspects. These method aspects may be performed by hardware components, by a computer programmed with suitable software, by any combination of the two, or in any other manner. Additionally, embodiments in accordance with the present disclosure also relate to methods for operating the apparatuses. These include method aspects for performing each function of the apparatus. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] To enable a detailed understanding of the above-described features of the present disclosure, a more specific description of the disclosure briefly summarized above may be obtained by reference to the embodiments. The drawings relate to embodiments of the present disclosure and are described as follows:

[0019] Figure 1 A schematic diagram of a material deposition apparatus according to an embodiment described herein is shown;

[0020] Figure 2A A schematic diagram of a material deposition apparatus according to an embodiment described herein is shown;

[0021] Figure 2B shows the temperature distribution at the substrate according to the embodiments described herein;

[0022] Figure 3 shows a schematic diagram of a material deposition apparatus according to the embodiments described herein;

[0023] Figure 4A shows a schematic diagram of a material deposition apparatus according to the embodiments described herein;

[0024] Figure 4B shows the heat load distribution at the substrate according to the embodiments described herein; and

[0025] Figure 5 shows a flowchart of a method according to the embodiments described herein. DETAILED DESCRIPTION

[0026] Reference will now be made in detail to various embodiments of the present disclosure, one or more examples of which are illustrated in the accompanying drawings. In the following description of the drawings, like reference numerals denote like components. In general, only the differences regarding individual embodiments are described. Each example is provided by way of explaining the present disclosure and is not meant to be limiting of the present disclosure. Furthermore, features shown or described as part of one embodiment can be used in other embodiments or combined with other embodiments to yield yet another embodiment. This specification is intended to include such modifications and variations.

[0027] The embodiments provided herein relate to thin film coating by evaporation, specifically to thin film coating in a vacuum chamber. Typically, the material to be coated is heated to a material-specific temperature for evaporation. Generally, a higher evaporation rate can be provided at a higher temperature. The corresponding temperature for a specific coating rate depends more on, for example, the material vapor pressure compared to other factors. For high deposition rate processes, the condensation heat load of the material can dominate the heat load on the substrate.

[0028] In an evaporation system, the evaporated material condenses on the surface of system components having a temperature lower than that of the evaporated material. For thermal coating of a substrate, the substrate has a lower temperature such that the evaporated material can be coated onto the substrate to form a thin layer on the substrate. However, the coating or material deposition based on the temperature difference between the material to be deposited and the substrate also provides condensation energy to the substrate. Thus, the condensation energy provided by the deposited material heats the substrate, particularly at the location where the evaporated material directly impacts the substrate.

[0029] Accordingly, it is beneficial to provide systems, apparatuses, and methods that avoid concentrating condensation energy onto a substrate to be coated and that provide a better thermal distribution (i.e., condensation energy) on the substrate to be coated.

[0030] Figure 1 Exemplarily shown is a material deposition apparatus according to embodiments described herein, which can be combined with any other embodiments described herein. The material deposition apparatus 100 can include a vacuum chamber 105. A vacuum can be provided in the vacuum chamber. For example, the material deposition apparatus can include a vacuum pump for providing a vacuum in the vacuum chamber.

[0031] The term "vacuum" as used herein can be understood as a technical vacuum with a vacuum pressure less than, for example, 10 mbar. Typically, the pressure in the vacuum chamber as described herein can be between 10 -4 mbar and about 10 -8 mbar, more typically between 10 -4 mbar and about 10 -7 mbar, and even more typically between about 10 -5 mbar and about 10 -6 mbar. In some embodiments, the total pressure in one or more vacuum chambers can be in the range of about 10 -4 mbar to about 10 -7 mbar. Accordingly, the vacuum chamber can be a "vacuum deposition chamber", i.e., a vacuum chamber configured for vacuum deposition.

[0032] According to an embodiment that can be combined with any other embodiments described herein, the material deposition apparatus can include an evaporation source 110. The evaporation source is configured to provide an evaporation material to a substrate 122. The evaporation source 110 can be disposed in the vacuum chamber 105 or can be at least partially disposed in the vacuum chamber 105.

[0033] According to an embodiment that can be combined with any other embodiments described herein, the material deposition apparatus can include a substrate transport device 120. The substrate transport device can be configured to transport the substrate 122. The substrate 122 can be arranged around the substrate transport device 120. The substrate transport device 120 can be a coating roller as Figure 1 exemplarily shown therein. The coating roller can include a curved roller surface, and the vapor deposition apparatus can be configured to move the substrate 122 on the curved roller surface past the evaporation source 110 in a circumferential direction or a substrate transport direction D. For example, the substrate can be a flexible web or foil, and the material deposition apparatus can be a roll-to-roll deposition apparatus. The coating roller can be in a direction perpendicular to Figure 1A cylinder extending in the length direction of the paper surface. The substrate conveying device can be movable, i.e., the coating roller can rotate around axis A. The substrate conveying device can move or rotate clockwise or counterclockwise. The substrate conveying device can change its direction during deposition. For example, when the substrate conveying device rotates clockwise during deposition, the rotation direction can be changed to counterclockwise, and vice versa. The substrate can move in the circumferential direction or the substrate conveying direction as indicated by arrow D in Figure 1 the figure.

[0034] According to some embodiments that can be combined with other embodiments described herein, the coating roller can be an air-cushion coating roller. The air-cushion coating roller provides a cooling gas between the roller surface and the substrate. For example, the roller and the cooling gas can be cooled to a temperature below room temperature. Heat can be removed from the substrate to allow a higher deposition rate without damaging the thin foil or web on which the material is deposited.

[0035] For an air-cushion roll, a first group of gas outlets (i.e., open gas outlets) can be provided in the web guiding area of the processing roller. A second group of gas outlets (i.e., closed gas outlets) is provided outside the web guiding area. Since the gas is only discharged in the web guiding area where a hover cushion needs to be formed, no or very little gas is directly discharged into the area not overlapped by the web, which can reduce gas waste and / or maintain a better vacuum with a smaller strain on the pump system.

[0036] According to some embodiments that can be combined with other embodiments described herein, as a supplement or alternative to the multiple groups of gas outlets, the outer surface of the processing roller can be coated with a microporous surface. The microporous surface can allow a small amount of cooling gas to flow from the inside of the processing roller to the surface of the processing roller. The cooling gas can form an air cushion between the processing roller and the web or foil guided on the processing roller for material deposition.

[0037] According to embodiments that can be combined with any other embodiments described herein, the substrate can be a thin substrate, such as a foil or a web. The substrate to be coated can have a thickness of 50 microns or less, specifically 20 microns or less, or even 10 microns or less. For example, a metal foil or a flexible metal-coated foil can be coated in a vapor deposition device. In some embodiments, the substrate 10 is a thin copper foil or a thin aluminum foil with a thickness less than 30 microns (e.g., 10 microns or less).

[0038] According to embodiments that can be combined with any other embodiments described herein, the material deposition device can include a substrate supply or unwinding roll for providing an untreated substrate ( Figure 1(not shown in the figure). The substrate supply or unwind roller is movable (i.e., rotatable) such that the substrate can be unwound from the substrate supply or unwind roller. In addition, the material deposition apparatus may include a substrate receiving roller for receiving the processed substrate after the material is deposited on the substrate. The substrate receiving roller is movable, i.e., the substrate receiving roller can rotate to receive the processed substrate. The substrate receiving roller and the substrate supply or unwind roller can rotate in the same direction, i.e., these rollers can rotate clockwise, or the substrate supply or unwind roller can rotate in the opposite direction, i.e., one roller can rotate clockwise and the other roller can rotate counterclockwise, and vice versa.

[0039] However, it should be understood that although Figure 1 (not shown in the figure), the substrate conveying device can also be a roll-to-roll conveying device. The roll-to-roll conveying device may include an unwind or substrate supply roll from which the unprocessed substrate can be provided. The roll-to-roll conveying device may further include a receiving roller for winding up the processed substrate. The unwind or substrate supply roll and the receiving roller may each be disposed in a different vacuum chamber compared to the evaporation source, or may be disposed in the same vacuum chamber as the evaporation source. Between the unwind roll and the receiving roller, the substrate may be disposed near the evaporation source for depositing the material on the substrate. For example, the substrate may "span" between the unwind roll and the receiving roller and may be guided above the evaporation source to receive the evaporated material. For example, the substrate may have a defined and / or controlled force. A substrate tensioner may be provided.

[0040] According to an embodiment that can be combined with any other embodiment described herein, the evaporation source 110 may have a first end and a second end opposite the first end. A space may be defined between the first end and the second end. The term "second end opposite the first end" used throughout this disclosure can be understood as the two sides of the evaporation source being arranged adjacent to each other. For example, the evaporation source may include a first wall and a second wall that extend in the same direction and are arranged adjacent to each other. The first end and the second end can be understood as the sidewall limits of the evaporation source. Specifically, the first end and the second end may define a surface 119 therebetween, i.e., a surface that is substantially perpendicular to the first wall and the second wall of the evaporation source. The surface of the evaporation source may be aligned with the substrate conveying device, i.e., the surface 119 of the evaporation source may be oriented such that the supply of the material to be deposited can be enhanced.

[0041] According to an embodiment that can be combined with any other embodiment described herein, the evaporation source can provide the material to be deposited on the substrate. The evaporation source may include a crucible in which the material to be deposited can be evaporated by providing a temperature suitable for evaporating the material to the material. For example, the material to be deposited may include, for example, metals (especially lithium), metal alloys, and other evaporable materials or the like that have a gas phase under given conditions. According to another embodiment, additionally or alternatively, the material may include magnesium (Mg), ytterbium (Yb), and lithium fluoride (LiF).

[0042] In addition, the evaporation source may include a dispenser. The dispenser may dispense the evaporation material. The material may be provided in the dispenser, for example, by means of a crucible connected to the dispenser via an inlet opening. The dispenser may have one or more openings. The evaporation material to be deposited may leave the dispenser through the openings. The source material may be deposited on the substrate 122 through a plurality of nozzles extending through the openings. In other words, the evaporation source may include one or more nozzles for providing the evaporation material to the substrate. The material to be deposited may be sprayed onto the substrate through the plurality of nozzles, for example.

[0043] According to an embodiment that may be combined with any other embodiment described herein, a temperature control shield 112 is provided. The temperature control shield is configured to provide a heating zone or a cooling zone, specifically a preheating zone and a post-cooling zone. Specifically, the temperature control shield may be configured to provide a preheating zone or a post-cooling zone in the substrate conveying device 120, that is, towards or at the substrate 122 conveyed by the substrate conveying device. The temperature control shield 112 may include one of a heating device or a cooling device. The temperature control shield may be provided at the evaporation source 110. Specifically, one or more temperature control shields may be provided at the evaporation source. The temperature control shield 112 may be heatable such that when the temperature control shield 112 is heated to an operating temperature (for example, an operating temperature of 500 °C or higher in some embodiments), vapor condensation on the temperature control shield 112 may be reduced or prevented.

[0044] According to an embodiment of the present disclosure, the width of the temperature control shield in the conveying direction is at least 10%, specifically at least 20% greater than the corresponding width of the evaporation source. Therefore, the material deposition is not limited to the area of the evaporation source in the conveying direction. Restricting the material plume to the evaporation source area may cause a sudden increase in the substrate temperature, which may cause the substrate (such as a thin foil or web) to wrinkle and warp. Therefore, it is allowed that the material plume from the evaporation source diffuses to the sides of the evaporation area to have a preheating zone and / or a post-cooling zone. Since the increase in temperature is directly related to the amount of deposited material, the extended shape of the heating shield results in a low deposition rate at the inlet. The deposition rate increases, for example, continuously, until the maximum deposition rate at the main body of the evaporation source. As described herein, the heat load is mainly provided by the condensation energy. Therefore, the temperature distribution of the web or foil is proportional to the deposition rate. Therefore, the increase in the temperature distribution is similar to the distribution of the deposition rate described above.

[0045] According to an embodiment that may be combined with any other embodiment described herein, the temperature control shield may include a heat-conducting material. The temperature control shield may include a material suitable for contacting heating or cooling. For example, the temperature control shield may be made of a metallic material, such as stainless steel, molybdenum, tantalum, tungsten, invar alloy or other high-temperature materials or high-temperature metals. For example, aluminum nitride may also be provided as a good heat-conducting ceramic.

[0046] According to an embodiment that can be combined with any other embodiment described herein, one or more temperature control shields can be provided at the first end and the second end of the evaporation source. Specifically, a first temperature control shield can be provided at the first end of the evaporation source, and a second temperature control shield can be provided at the second end of the evaporation source. Additionally or alternatively, a first portion of the temperature control shield can be provided at the first end of the evaporation source, and a second portion of the temperature control shield can be provided at the second end of the evaporation source.

[0047] In other words, the temperature control shield 112 does not contact the substrate transfer device 120, such that the substrate supported on the substrate transfer device 120 can move past the evaporation source 110 and the temperature control shield 112 during material deposition. The temperature control shield 112 can leave only a small gap, such as 5 millimeters or less, 3 millimeters or less, 2 millimeters or less, or even about 1 millimeter, between the temperature control shield 112 and the substrate transfer device 120, so that hardly any vapor can propagate through the temperature control shield, for example, in the lateral direction.

[0048] According to an embodiment that can be combined with any other embodiment described herein, the temperature control shield can extend in the circumferential direction or the substrate transfer direction D. The temperature control shield can include a width dimension along the axis of the substrate transfer device 120 and a length dimension along a direction different from the axis of the substrate transfer device 120 (i.e., in the circumferential direction or the substrate transfer direction D).

[0049] According to an embodiment that can be combined with any other embodiment described herein, the temperature control shield can extend radially or laterally away from the evaporation source. Hereinafter, such a temperature control shield can also be referred to as an "elongated shield". For example, the temperature control shield can include a straight portion 113 that extends radially or outwardly from the evaporation source. The temperature control shield or the straight portion can be directed from the evaporation source towards the substrate 122. The temperature control shield or the straight portion 113 can define a deposition area towards the substrate. The temperature control shield or the straight portion can be inclined relative to the evaporation source. For example, the temperature control shield can be arranged at a wide angle α relative to the evaporation source 110 (i.e., relative to the surface 119 of the evaporation source between the first end and the second end of the evaporation source). The wide angle can be between 95° and 180°, particularly between 110° and 140°, and more particularly between 110° and 130°.

[0050] According to an embodiment that can be combined with any other embodiment described herein, the temperature control shield 112 can be curved, or can include a curved portion or a curved end 111. The curved portion can be curved relative to the straight portion 113. The curved end 111 can further define a deposition area between the evaporation source and the substrate. The curved portion or the curved end can be inclined towards the substrate, that is, the curved end can be closer to the substrate compared to the straight portion. In other words, the distance from the straight portion to the substrate is greater than that from the curved end to the substrate.

[0051] According to an embodiment that can be combined with any other embodiment described herein, the material deposition apparatus can include a deposition area between the evaporation source 110 and the substrate conveying device 120. The deposition area can be understood as the area where the material to be deposited is provided to the substrate. The deposition area can be filled with the material to be deposited from the evaporation source, and can be laterally defined by one or more temperature control shields, for example, to provide a uniform material deposition.

[0052] According to an embodiment that can be combined with any other embodiment described herein, compared with the conventional shields in the art, one or more temperature control shields can be elongated. Specifically, the straight portion 113 can be elongated. An elongated temperature control shield can be understood as a shield that covers or surrounds a large surface area of the substrate, thereby providing a larger deposition area compared to the short shields or sidewalls in the art (such as the shields extending at a 90° angle from the deposition source to the substrate). Therefore, one or more temperature control shields can be arranged at at least one of the first end or the second end of the evaporation source, and can extend outwardly towards the substrate conveying device, and can be configured to enlarge the deposition area, especially compared to the straight shield extending towards the substrate at a 90° angle.

[0053] According to an embodiment that can be combined with any other embodiment described herein, each of the one or more temperature shields can have a length of at least 20% of the length of the surface 119 between the first end and the second end of the evaporation source 110.

[0054] According to an embodiment that can be combined with any other embodiment described herein, one or more temperature control shields can be heated. The temperature of the shield can be controlled to prevent or avoid the condensation of the material to be deposited. If the material to be deposited condenses at the shield, heating one or more temperature control shields can cause the condensed material to evaporate again. Advantageously, a high deposition yield can be achieved.

[0055] Further advantageously, the condensation energy brought by the thermally evaporated material to the substrate can be distributed over a large area of the substrate. The temperature control shield can provide an area under the substrate where the material to be deposited is not actively provided, i.e., in this area, no nozzle of the evaporation source is arranged, but the material to be deposited can be provided by the temperature control shield described herein. Thus, when the substrate to be coated is conveyed along one or more temperature control shields, the material to be deposited can be provided at a lower rate in the area without nozzles compared to the rate at which the material is provided at the positions with nozzles (i.e., compared to the rate at which the material is directly provided by a plurality of nozzles). Therefore, during coating, the total temperature provided by the material to the substrate is more evenly distributed over a larger area of the substrate. Thus, damage related to the temperature of the substrate can be avoided or prevented. In particular, wrinkling of the substrate can be avoided or prevented. Thus, the coating of the substrate is more efficient, resulting in a higher yield of the processed substrate and better quality of the processed substrate.

[0056] More advantageously, a lower coating rate can be provided at the position where the substrate enters the area between the temperature control shield and the substrate conveying device. Subsequently, when the substrate advances towards the evaporation source with nozzles (i.e., the area facing the evaporation source), the coating rate can increase slowly, making the coating of the substrate more uniform. If there is a second temperature control shield, the coating rate can decrease when the substrate further advances to the second temperature control shield arranged at the second end of the evaporation source.

[0057] According to an embodiment that can be combined with any other embodiment described herein, and by way of example with reference to Figure 2A , the material deposition device 200 can include at least two evaporation sources. The at least two evaporation sources can be arranged relative to the substrate conveying direction as indicated by the arrow D in Figure 2A . In other words, the at least two evaporation sources can be arranged in a row or one behind the other relative to the substrate conveying direction. The at least two evaporation sources can be the evaporation sources as described herein.

[0058] According to an embodiment that can be combined with any other embodiment described herein, each of the at least two evaporation sources 110 can include two asymmetric temperature control shields, or can have an asymmetric temperature control shield with two parts that are asymmetric with respect to each other. The term "asymmetric" as used herein can be understood to mean that the two temperature control shields or the plurality of parts of the temperature control shield can be different in shape and size. In addition, it can be understood that the two asymmetric shields or the two parts can have different lengths, and the two asymmetric shields or the two parts can extend in different directions, but both extend towards the substrate.

[0059] According to an embodiment that can be combined with any other embodiment described herein, the asymmetric temperature control shield may include a first asymmetric temperature control shield 214 and a second asymmetric temperature control shield 216, which are arranged on opposite sides of each of at least two evaporation sources. The first asymmetric temperature control shield 214 may be a straight shield, i.e., the first temperature control shield may not include a bent end. The first asymmetric temperature control shield 214 may extend outward from each evaporation source, i.e., the first asymmetric temperature control shield 214 may be arranged at the first end of one of the at least two evaporation sources and at the second end of the other of the at least two evaporation sources, and vice versa, and one evaporation source and the other evaporation source may be arranged adjacent to each other.

[0060] According to an embodiment that can be combined with any other embodiment described herein, the second asymmetric temperature control shield 216 may include a straight portion and a bent end. The bent end may bend away from the substrate or towards another shield. A deposition area is provided between the second asymmetric temperature control shields 216 of adjacent evaporation sources. The second asymmetric temperature control shield 216 may extend inward from each evaporation source, i.e., the second asymmetric temperature control shield 216 may be arranged at the second end of one of the at least two evaporation sources and at the first end of the other of the at least two evaporation sources, and vice versa, and may extend towards each other. Specifically, the bent ends may bend towards each other, i.e., the corresponding straight portions may point towards the substrate, and the corresponding bent ends may optionally bend away from the substrate. For example, the bent ends may bend at a certain angle with respect to the straight portion of the second asymmetric temperature control shield.

[0061] Advantageously, such an open shield design between at least two evaporation sources as described above allows evacuation of the vacuum, but still prevents stray coating of the material to be deposited. Further advantageously, the asymmetric shield arrangement, especially the arrangement of the two second asymmetric temperature control shield devices as described above, prevents excessive cooling of the substrate between two evaporation sources where no active particle deposition occurs. Therefore, the temperature brought into the material deposition equipment by the evaporation material can also be more evenly distributed between the two evaporation sources, thereby effectively preventing or avoiding wrinkles in the substrate such as a foil. In other words, the interface between two evaporation sources where the substrate is usually cooled due to the absence or presence of fewer material particles can be bridged to allow a uniform coating without damaging the substrate due to rapid temperature changes between the two evaporation sources.

[0062] It should be understood that more than two evaporation sources may also be arranged along the substrate conveying direction, and an open shield design, i.e., an asymmetric shield design with two bent shields facing each other, may be provided between the respective evaporation sources.

[0063] In Figure 2BThe beneficial effects of combining an open shield design with an evaporation source are exemplarily presented in the schematic diagrams. Figure 2B Two temperature profiles are shown, where the x-axis is time in seconds and the y-axis is the substrate temperature in °C. The dashed line 234 shows the temperature profile of a material deposition apparatus that includes four evaporation sources arranged in the substrate transport direction, without an open shield design between the evaporation sources, and the solid line 232 shows the temperature profile of four evaporation sources arranged in the substrate transport direction, with an open shield design, i.e., an asymmetric temperature control shield according to the embodiments described herein, between the evaporation sources. Both curves show the temperature profiles for the same deposition thickness, i.e., the total deposition rate. Each plateau portion can be considered where the substrate is directly positioned above one of the evaporation sources. In other words, the x-axis representing time shows the time for a substrate section to move over the four evaporation sources. Thus, before reaching the first plateau, the substrate can be considered to be spatially located in front of the first evaporation source, i.e., to the left of the left evaporation source shown in Figure 2A Due to the first temperature control shield, the slope of the solid curve 232 is flatter than the slope of the dashed curve 234, in which an extremely steep slope is detected when the substrate reaches the evaporation source (with no temperature control shield on the left side in Figure 2A ). Thus, especially due to the relatively low mass of the substrate, when there is no temperature control shield at the evaporation source, the temperature at the substrate rises in an unstable manner and remains at a very high level before rapidly dropping after the substrate has passed the first evaporation source.

[0064] In contrast, for evaporation sources with an open shield design, the temperature of the substrate rises slowly and remains at a moderate level. Due to the curved shield between the evaporation sources, no sharp drop in temperature is detected, but rather the temperature remains almost constant, even when the substrate is not directly above the evaporation source. After material deposition, the temperature decreases more smoothly compared to evaporation sources without an open shield design.

[0065] Thus, the temperature at the substrate can be more constantly maintained at a moderate level. Thus, heat-related damage to the substrate can be avoided or prevented. In addition, the variation of temperature over time can be reduced, thereby reducing or preventing wrinkling or warping of the substrate.

[0066] According to an embodiment that can be combined with any other embodiment described herein, referring to Figure 3 , a material deposition apparatus 300 is provided herein that has an open shield design and a temperature control shield with a heating or cooling zone. In other words, Figure 3 the material deposition apparatus shown can be considered with respect to Figure 1 and Figure 2ACombinations of the embodiments shown. Accordingly, the material deposition apparatus includes at least two evaporation sources 310 disposed along the substrate transport direction D below a substrate transport device 120 that transports a substrate 122. The at least two evaporation sources 310 may include a first asymmetric shield (or shield portion) and a second asymmetric shield (or shield portion), both disposed on opposite sides of each of the at least two evaporation sources. The first asymmetric shield is a temperature-controlled shield according to the embodiments described herein, i.e., the first asymmetric temperature-controlled shield may be the temperature-controlled shield 112, such as an elongated shield having a straight portion 113 and a curved end 111 as Figure 1 described, and, for example, providing an enlarged coating area. The second asymmetric shield may be the shield as referenced Figure 2A described, i.e., the second asymmetric temperature-controlled shield may include a straight portion 216 and a curved end 217, with the curved end 217, for example, being bent away from the substrate and toward another evaporation source among the at least two evaporation sources.

[0067] Transfer the beneficial effects described in the embodiments as herein with respect to Figure 1 and Figure 2A described embodiments, and return to the Figure 2B shown temperature distribution, Figure 3 The shield design shown can result in a smooth increase in temperature on the left side (representing the left side of the leftmost evaporation source) and a smooth decrease in temperature on the right side of the solid curve 232. Accordingly, the coating rate is reduced at the outermost positions on the left and right sides of the evaporation source, such that the total heat load (especially an increasing or decreasing heat load) can be maintained at a moderate level relative to a complete deposition cycle in which the substrate can pass all the evaporation sources arranged in the substrate transport direction.

[0068] According to an embodiment that can be combined with any other embodiment described herein, an evaporation source for providing an evaporation material to a substrate in a vacuum chamber is provided. The evaporation source includes a nozzle assembly shield having a plurality of nozzles arranged in columns. Each column includes two outermost nozzles. The two outermost nozzles are inclined in different directions. For Figure 4A the evaporation source 410 shown, one of the multiple columns is shown. The multiple columns are arranged along the axis A of the transport device 120. One or more columns, particularly 50% or more of the columns or all of the columns, may have inclined nozzles as Figure 4A shown and described.

[0069] According to an embodiment combinable with any other embodiment described herein, the evaporation source may have a first end and a second end, and a surface between the first end and the second end. The nozzle assembly shield may include a plurality of openings arranged in at least one row (e.g., multiple rows) on the surface between the first end and the second end. The at least one row may have a first outermost opening disposed adjacent to the first end and a second outermost opening disposed adjacent to the second end.

[0070] According to an embodiment combinable with any other embodiment described herein, the nozzle assembly shield may include a plurality of rows having a plurality of openings. The plurality of rows may be arranged in parallel on the surface, i.e., along the axis of the coating roller.

[0071] According to an embodiment combinable with any other embodiment described herein, a plurality of nozzles may extend through the plurality of openings. The plurality of nozzles in one row may include a first outermost nozzle extending through the first outermost opening and a second outermost nozzle extending through the second outermost opening. The first outermost nozzle and the second outermost nozzle may be inclined at an angle with respect to the surface between the first end and the second end. For example, the first and second outermost nozzles may be inclined at an angle corresponding to Figure 1 the angle α shown. Additionally or alternatively, the first outermost nozzle and the second outermost nozzle may be inclined at an angle between 5° and 25°, more particularly, 5° to 15°, and even more particularly, 5° to 10°.

[0072] According to an embodiment combinable with any other embodiment described herein, and with reference to Figure 4A , a material deposition apparatus 400 for depositing an evaporation material onto a substrate is provided. The material deposition apparatus may include an evaporation source according to an embodiment described herein, i.e., an evaporation source including the nozzle assembly shield as described above. The material deposition apparatus may further include one or more temperature control shields according to any embodiment described herein. Thus, the material deposition apparatus 400 may include an elongated shield or a shield 112 having, for example, a straight portion 113 and a curved end 111 as described with reference to Figure 1 , and any combination of either of the first and second asymmetric shields as described with reference to Figure 2A .

[0073] According to an embodiment, the material deposition apparatus may include at least two evaporation sources distributed along a substrate conveyance direction D. The at least two evaporation sources may each include a dispenser and a crucible as described herein. In addition, the at least two evaporation sources may include a plurality of openings arranged in at least one row (e.g., multiple rows extending along the axis of the coating roller). The at least one row extends from a first end of each of the at least two evaporation sources to a corresponding second end. The plurality of openings may include a plurality of nozzles 318 for providing an evaporation material to the substrate. The plurality of openings may include a first outermost opening adjacent the corresponding first end and a second outermost opening adjacent the corresponding second end of the at least two evaporation sources. The first and second outermost nozzles may be provided through the first outermost opening and the second outermost opening.

[0074] According to an embodiment that may be combined with any other embodiment described herein, the first and second outermost nozzles 315 may be inclined in different directions. For example, each of the first and second outermost nozzles may be inclined in a direction similar to a temperature control shield directly disposed beside the inclined nozzle. In other words, when the inclined nozzle is disposed adjacent the first end, the nozzle may be inclined in a direction similar to that of the temperature control shield disposed at the first end of the evaporation source, and when the inclined nozzle is disposed adjacent the second end, the inclined nozzle may be inclined in a direction similar to that of the temperature control shield disposed at the second end. More specifically, the inclination angle of the corresponding inclined nozzle may be similar to the angle of the corresponding linear portion 113, 216 of the corresponding temperature control shield.

[0075] The beneficial effects of combining the inclined nozzle design with an open shield design including an elongated temperature control shield as Figure 4A shown may be exemplarily presented in Figure 4B the figures. Figure 4B The two heat loads of two evaporation sources are shown, the two evaporation sources having respective temperature control shield designs and having or not having inclined nozzles. The dashed line 438 shows the heat load of the evaporation source without an inclined nozzle, and the solid line 436 shows the heat load of the evaporation source with an inclined nozzle.

[0076] In the illustration, the x-axis is the substrate position measured in the total length spanned by the evaporation source, e.g., the total length is the total length of four evaporation sources distributed along the substrate conveyance direction. The y-axis describes the layer thickness normalized to a percentage [%], i.e., the y-axis provides a relative measure of the amount of material deposited on the substrate. In other words, the y-axis provides the percentage of the beneficial layer thickness achieved using the material deposition apparatus. Since the heat load depends on the amount of material deposited on the substrate, the relative layer thickness may provide information about the relative heat load at different positions.

[0077] Achieving a high deposition rate, i.e., a layer thickness of 5 to 100 micrometers, is beneficial. However, the more material deposited on the substrate, the greater the condensation energy provided to the substrate, resulting in a high temperature of the substrate, which may damage the substrate, for example causing wrinkles to form in a foil substrate, for example. In addition, the maximum temperature of the foil is limited by the melting temperature of the deposited material. In the case of using lithium, the maximum temperature of the substrate is advantageously well below (e.g., 20 °C lower) the melting temperature of the material, which is 180 °C in the case of lithium. Therefore, it is advantageous to provide a smooth temperature increase at the substrate to prevent temperature-related damage to the substrate while still achieving a high deposition rate, especially when the layer thickness deposited during processing is the same.

[0078] Figure 4B The solid curve 436 in the square box 437 shows that, compared to the profile of the curve 438 without the nozzle being tilted, the arrangement including the tilted nozzle further makes the temperature increase smoother. Therefore, the combination of the temperature control shield and the use of the outermost tilted nozzles provides a smooth temperature increase while still providing a high deposition rate.

[0079] According to an embodiment that can be combined with any other embodiment described herein, a method for depositing a material onto a substrate in a vacuum chamber is provided. In operation 502, the material is evaporated in an evaporation source having a vapor emission region. In operation 504, the evaporated material is guided by a temperature control shield towards a substrate region that is larger than the vapor emission region. According to some embodiments, the substrate region is larger in the transport direction of the substrate. For example, the deposition rate in the substrate region outside the emission region is less than the deposition rate in the emission region, especially the deposition rate in at least 10% of the substrate region outside the emission region is at least 50% less than the deposition rate in the emission region. According to some embodiments, the substrate can be evaporated using an evaporation device according to an embodiment of the present disclosure, and / or the substrate can be guided using a temperature control shield according to an embodiment of the present disclosure.

[0080] According to yet another embodiment, a method for manufacturing a battery anode is provided. The method can include the method for depositing a material onto a substrate in a vacuum chamber according to any embodiment described herein.

[0081] According to yet another embodiment, a method for manufacturing a battery anode is provided. The method can include guiding a web including or consisting of an anode layer in a material deposition device according to any embodiment described herein, and depositing a lithium-containing material or lithium on the web using a chemical vapor deposition device.

[0082] According to some embodiments that can be combined with other embodiments described herein, in a method of manufacturing a battery anode, the strip includes copper or consists of copper. According to some embodiments, the strip may further include graphite and silicon and / or silicon oxide. For example, lithium may pre-lithiate a layer including graphite and silicon and / or silicon oxide.

[0083] In particular, the following embodiments are described herein:

[0084] Embodiment 1. A temperature control shield for an evaporation source, the temperature control shield being configured to provide a preheating zone or a post-cooling zone.

[0085] Embodiment 2. The temperature control shield for an evaporation source according to Embodiment 1, wherein the temperature control shield includes one of a heating device or a cooling device.

[0086] Embodiment 3. The temperature control shield for an evaporation source according to Embodiment 1 or 2, wherein the temperature control shield is disposed at the evaporation source and extends outwardly from the evaporation source.

[0087] Embodiment 4. The temperature control shield for an evaporation source according to Embodiments 1 to 3, wherein the temperature control shield includes a straight portion and a curved end.

[0088] Embodiment 5. The temperature control shield for an evaporation source as described in Embodiment 4, wherein the curved end extends away from the evaporation source in a direction towards the substrate support, particularly generally parallel to the orientation of the evaporation source.

[0089] Embodiment 6. The temperature control shield for an evaporation source according to Embodiments 1 to 5, wherein the temperature control shield includes a thermally conductive material.

[0090] Embodiment 7. A material deposition apparatus for depositing an evaporation material onto a substrate, the material deposition apparatus including: one or more temperature control shields of Embodiments 1 to 6.

[0091] Embodiment 8. A material deposition apparatus for depositing an evaporation material onto a substrate, the material deposition apparatus including an evaporation source for providing an evaporation material to the substrate, the evaporation source having a first end and a second end opposite the first end, and a surface having a length between the first end and the second end; and one or more temperature control shields disposed at at least one of the first end or the second end of the evaporation source, the one or more temperature control shields extending outwardly from the evaporation source, wherein the one or more temperature control shields provide a width of at least 20% of the surface length between the first end and the second end of the evaporation source.

[0092] Embodiment 9. A material deposition apparatus for depositing an evaporation material onto a substrate, the material deposition apparatus including an evaporation source for supplying the evaporation material to the substrate, the evaporation source having a first end and a second end opposite the first end; and one or more temperature-controlled shields disposed at at least one of the first end or the second end of the evaporation source, the one or more temperature-controlled shields extending outward from the evaporation source at a wide angle.

[0093] Embodiment 10. The material deposition apparatus for depositing an evaporation material onto a substrate according to Embodiments 7 to 9, wherein the wide angle is between 95° and 180°.

[0094] Embodiment 11. The material deposition apparatus for depositing an evaporation material onto a substrate according to Embodiments 7 to 10, wherein the one or more temperature-controlled shields extend toward the substrate conveying device and are configured to provide a heating zone or a cooling zone, in particular a preheating zone or a post-cooling zone.

[0095] Embodiment 12. The material deposition apparatus for depositing an evaporation material onto a substrate according to Embodiments 7 to 11, the material deposition apparatus further including: a substrate conveying device disposed above the evaporation source.

[0096] Embodiment 13. A material deposition apparatus for depositing an evaporation material onto a substrate, the material deposition apparatus including: a substrate conveying device for conveying the substrate along a substrate conveying direction; and at least two evaporation sources disposed along the substrate conveying direction for supplying the evaporation material to the substrate, each of the at least two evaporation sources including one or more asymmetric temperature-controlled shields.

[0097] Embodiment 14. The material deposition apparatus for depositing an evaporation material onto a substrate according to Embodiment 13, wherein the two asymmetric temperature-controlled shields are disposed on opposite sides of each of the at least two evaporation sources, and wherein the two asymmetric temperature-controlled shields extend toward the substrate conveying device in different directions.

[0098] Embodiment 15. The material deposition apparatus for depositing an evaporation material onto a substrate according to Embodiment 13 or 14, wherein the second temperature-controlled shields of the at least two evaporation sources are disposed adjacent to each other, and wherein the second temperature-controlled shields are bent away from the substrate and / or toward each other.

[0099] Embodiment 16. The material deposition apparatus for depositing an evaporation material onto a substrate according to Embodiments 13 to 15, wherein the first asymmetric temperature-controlled shield is the temperature-controlled shield of Embodiments 1 to 6.

[0100] Embodiment 17. The material deposition apparatus for depositing an evaporation material onto a substrate as described in Embodiments 7 to 16, the material deposition apparatus further comprising: a vacuum chamber accommodating at least a temperature-controlled shield.

[0101] Embodiment 18. The material deposition apparatus as described in Embodiments 7 to 16 that directly or indirectly depends on Embodiment 13, wherein two asymmetric temperature-controlled shields are configured to provide material between at least two evaporation sources and / or provide a deposition area from a first end of a first deposition source to a second end of a second deposition source.

[0102] Embodiment 19. An evaporation source for providing an evaporation material to a substrate in a vacuum chamber, the evaporation source comprising: a nozzle assembly shield having a plurality of nozzles arranged in at least one row, the row including two outermost nozzles, wherein the two outermost nozzles are inclined in different directions.

[0103] Embodiment 20. An evaporation source for providing an evaporation material to a substrate in a vacuum chamber, the evaporation source comprising: a nozzle assembly shield having a first end and a second end, and a surface facing the substrate between the first end and the second end, the nozzle assembly shield having a plurality of openings arranged in at least one row at the surface between the first end and the second end, the at least one row having a first outermost opening disposed adjacent to the first end and a second outermost opening disposed adjacent to the second end; and a plurality of nozzles extending through the plurality of openings, wherein the plurality of nozzles includes a first outermost nozzle extending through the first outermost opening and a second outermost nozzle extending through the second outermost opening, the first and second outermost nozzles being inclined at an angle with respect to the surface between the first end and the second end.

[0104] Embodiment 21. The evaporation source as described in Embodiment 20, wherein the angle is between 5° and 25°, more particularly, between 5° and 15°, even more particularly, between 5° and 10°.

[0105] Embodiment 22. The material deposition apparatus for depositing an evaporation material onto a substrate as described in Embodiments 7 to 19, the material deposition apparatus including at least one evaporation source as described in Embodiment 20 or 21.

[0106] Embodiment 23. A method of depositing a material onto a substrate in a vacuum chamber, the method comprising: evaporating a material in an evaporation source having a vapor emission region; and guiding the evaporated material toward a substrate region through a temperature-controlled shield, the substrate region being larger than the vapor emission region.

[0107] Embodiment 24. The method as described in Embodiment 23, wherein the substrate region is larger in the conveying direction of the substrate.

[0108] Embodiment 25. The method according to Embodiments 23 to 24, wherein the substrate area outside the emission area has a deposition rate smaller than that in the emission area, in particular, at least 10% of the substrate area outside the emission area has a deposition rate at least 50% smaller than that in the emission area.

[0109] Embodiment 26. A method for manufacturing a battery anode, comprising: a method of depositing a material onto a substrate in the vacuum chamber according to Embodiments 23 to 25.

[0110] Embodiment 27. A method for manufacturing a battery anode, comprising: guiding a web containing or consisting of an anode layer in the material deposition apparatus according to Embodiments 7 to 19; and depositing a lithium-containing material or lithium onto the web using a chemical vapor deposition apparatus.

[0111] Embodiment 28. The method according to Embodiment 27, wherein the web comprises copper.

[0112] Embodiment 29. The method according to Embodiment 27, wherein the web comprises graphite and silicon and / or silicon oxide.

[0113] Embodiment 30. The method according to Embodiment 29, wherein the anode layer is prelithiated.

[0114] Although the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, and the scope of the present disclosure is determined by the appended claims.

Claims

1. A material deposition device for depositing an evaporation material onto a substrate, the material deposition device comprising: An evaporation source (110), the evaporation source (110) including a plurality of nozzles, the plurality of nozzles including two outermost nozzles, wherein the two outermost nozzles are inclined in different directions; and One or more temperature control shields, wherein the one or more temperature control shields are arranged at the evaporation source and extend outward from the evaporation source toward a substrate conveying device.

2. The material deposition device according to claim 1, wherein the one or more temperature control shields include one of a heating device or a cooling device.

3. The material deposition device according to any one of claims 1 to 2, wherein the one or more temperature control shields include a straight portion and a bent end.

4. The material deposition device according to claim 3, wherein the bent end extends away from the evaporation source in a direction towards the substrate conveying device.

5. A material deposition device for depositing an evaporation material onto a substrate, the material deposition device comprising: An evaporation source (110) for providing the evaporation material to the substrate, the evaporation source having a first end and a second end opposite the first end, and a surface having a length between the first end and the second end, wherein the evaporation source (110) has a plurality of nozzles between the first end and the second end, the plurality of nozzles including two outermost nozzles, wherein the two outermost nozzles are inclined in different directions; and One or more temperature control shields, the one or more temperature control shields being arranged at at least one of the first end or the second end of the evaporation source, the one or more temperature control shields extending outward from the evaporation source toward the conveying device, wherein the one or more temperature control shields provide a width of at least 10% of the length of the surface between the first end and the second end of the evaporation source.

6. A material deposition device for depositing an evaporation material onto a substrate, the material deposition device comprising: An evaporation source (110) for providing the evaporation material to the substrate, the evaporation source having a first end and a second end opposite the first end, wherein the evaporation source (110) has a plurality of nozzles between the first end and the second end, the plurality of nozzles including two outermost nozzles, wherein the two outermost nozzles are inclined in different directions; and One or more temperature control shields, the one or more temperature control shields being arranged at at least one of the first end or the second end of the evaporation source, the one or more temperature control shields extending outward from the evaporation source toward the conveying device at a wide angle.

7. The material deposition device for depositing an evaporation material onto a substrate according to any one of claims 5 to 6, wherein the one or more temperature control shields extend towards the substrate conveying device and are configured to provide a heating zone or a cooling zone.

8. A material deposition device for depositing an evaporation material onto a substrate, the material deposition device comprising: A substrate conveying device (120) for conveying the substrate along a substrate conveying direction; And At least two evaporation sources (110), the at least two evaporation sources being arranged along the substrate conveying direction for providing the evaporation material to the substrate, each of the at least two evaporation sources including one or more asymmetric temperature control shields, the one or more asymmetric temperature control shields extending outward from the evaporation source toward the substrate conveying device.

9. The material deposition device for depositing an evaporation material onto a substrate according to claim 8, wherein each of the at least two evaporation sources includes two asymmetric temperature control shields, the two asymmetric temperature control shields are arranged on opposite sides of each of the at least two evaporation sources, and wherein the two asymmetric temperature control shields extend towards the substrate conveying device in different directions.

10. The material deposition device for depositing an evaporation material onto a substrate according to any one of claims 8 or 9, wherein the second temperature control shields among the one or more asymmetric temperature control shields included in each of the at least two evaporation sources are arranged adjacent to each other, and wherein the second temperature control shields have a configuration of one of bending away from the substrate and bending towards each other.

11. The material deposition apparatus for depositing an evaporation material onto a substrate according to any one of claims 8 to 9, wherein the first asymmetric temperature control shield among the one or more asymmetric temperature control shields included in each of the at least two evaporation sources is configured to provide a preheating zone or a post-cooling zone.

12. The material deposition apparatus for depositing an evaporation material onto a substrate according to any one of claims 8 to 9, wherein the one or more asymmetric temperature control shields are configured as one of the group consisting of providing a material between the at least two evaporation sources and providing a deposition area from a first end of a first deposition source to a second end of a second deposition source.

13. An evaporation source for providing an evaporation material to a substrate in a vacuum chamber, the evaporation source comprising: A nozzle assembly shield having a plurality of nozzles arranged in at least one row, the row including two outermost nozzles, wherein the two outermost nozzles are inclined in different directions; And A temperature control shield, wherein the temperature control shield extends outward from the evaporation source toward a substrate conveying device.

14. An evaporation source for providing an evaporation material to a substrate in a vacuum chamber, the evaporation source comprising: A nozzle assembly shield having a first end and a second end, and a surface facing the substrate located between the first end and the second end, the nozzle assembly shield having a plurality of openings arranged in at least one row at the surface between the first end and the second end, the at least one row having a first outermost opening disposed adjacent to the first end and a second outermost opening disposed adjacent to the second end; A plurality of nozzles extending through the plurality of openings, wherein the plurality of nozzles includes a first outermost nozzle extending through the first outermost opening and a second outermost nozzle extending through the second outermost opening, the first outermost nozzle and the second outermost nozzle being inclined at an angle with respect to the surface between the first end and the second end; and A temperature control shield, wherein the temperature control shield extends outwardly from the evaporation source towards the substrate conveying device.

15. The evaporation source for providing an evaporation material to a substrate in a vacuum chamber according to claim 14, wherein the angle is between 5° and 25°.

16. A method for depositing a material onto a substrate in a vacuum chamber, the method comprising the following steps: Evaporating the material in an evaporation source having a vapor emission region, wherein the evaporation source (110) includes a plurality of nozzles, the plurality of nozzles including two outermost nozzles, wherein the two outermost nozzles are inclined in different directions; and Directing the evaporated material towards a substrate region through a temperature control shield, wherein the temperature control shield is disposed at the evaporation source and extends outwardly from the evaporation source towards the substrate conveying device.

17. The method for depositing a material onto a substrate in a vacuum chamber according to claim 16, wherein the substrate area is larger in the conveying direction of the substrate.

18. The method for depositing a material onto a substrate in a vacuum chamber according to any one of claims 16 to 17, wherein the deposition rate of the substrate area outside the emission area is less than the deposition rate within the emission area.

19. The method for depositing a material onto a substrate in a vacuum chamber according to any one of claims 16 to 17, wherein the deposition rate of at least 10% of the substrate area outside the emission area is at least 50% less than the deposition rate within the emission area.

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