Microwave or millimeter wave passive components or devices

Abstract

A passive device includes a hollow waveguide comprising a first wall structure and a second wall structure extending in a guiding direction, an interconnecting base extending between the wall structures, and an enclosure extending between the wall structures, the enclosure being positioned opposite the interconnecting base; and at least one array of coupled resonant structures enclosed within the waveguide, the array being configured to provide coupled local resonators and microwave or millimeter wave frequency passbands for providing at least one selected microwave or millimeter wave signal, the array extending along the guiding direction and positioned between the wall structures. Each resonant structure extends from the interconnecting base into the hollow waveguide to define a microwave or millimeter wave subwavelength resonant structure, with successive resonant structures separated by a microwave or millimeter wave subwavelength distance. The resonant frequency of the resonant structure is less than the cutoff frequency of the waveguide.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to international patent application No. PCT / IB2020 / 052819 filed on March 25, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to microwave or millimeter wave passive components or devices, and more particularly to microwave or millimeter wave waveguide components or devices, such as microwave or millimeter wave filters, duplexers, and multiplexers. More particularly, the present invention relates to subwavelength or deep subwavelength microwave or millimeter wave waveguide components or devices, such as microwave or millimeter wave filters, duplexers, and multiplexers based on locally resonant materials or metamaterials. Background Art

[0004] Waveguide technology is widely used to construct microwave passive components, such as filters, allowing for low loss and high power handling capabilities. They are often used in satellite communications and radar systems, however, they are typically larger than the wavelength, resulting in somewhat large and heavy metal components, which can be a problem in some applications, including embedded technologies. In the next decade, the demand for small satellite communications (such as cubesats, nano-satellites, micro-satellites, and mini-satellites) is likely to increase significantly due to their low mass and small size, enabling the simultaneous launch of several satellites from a single vehicle launcher. Therefore, finding solutions for compact and lightweight microwave waveguide components is a highly sought-after need in the development of these future technologies.

[0005] Conventional transmission media commonly used to implement microwave / millimeter wave components include rectangular waveguides, microstrip lines, coplanar waveguides, and substrate-integrated waveguides. Researchers have been searching for solutions to improve a number of technical factors in microwave component design, such as cost reduction, size reduction, weight reduction, system density increase, crosstalk suppression, and protective packaging [1]. However, although microstrip lines and coplanar lines are well-known to be robust and low-cost transmission lines, they have the potential for high insertion loss due to the presence of lossy dielectric materials and low power handling capabilities. Therefore, in high-power applications such as radar and space communication systems, microwave components have traditionally been implemented based on waveguide technology [2]. Hollow rectangular waveguides are commonly used to implement low-loss antenna system components, but are usually large and heavy due to the geometric proportions imposed by the operating frequency [3][4] (at GPS frequencies, a typical waveguide width is 10 cm). In addition, in order to implement filters or other microwave passive components that operate based on wave interference, several large waveguide cavities must be cascaded, which significantly increases the size of the component (GPS frequency filters can be half a meter long). Therefore, compactness and low weight of microwave components have become key issues, especially for small satellite systems. When we consider the significant growth in demand for cube / nano / micro satellites [5], which are typically several kilograms and consist of cubic units with dimensions of approximately 10 cm × 10 cm × 11.35 cm, the need for miniaturization of microwave passive components is obvious. Therefore, the size of the connecting microwave components attached to the antenna feed line must be smaller than the size of one unit [6].

[0006] For the design of waveguide passive components, different topologies and techniques have been proposed and implemented, mainly based on E-plane or H-plane irises, piles, columns and corrugations [2], [7], [8]. All dimensions of these filters vary directly with the operating wavelength. Conventional strategies mostly use directly coupled cavity configurations as cascaded connections of waveguide cavities with different cross sections. For more complex filtering functions, typical waveguide filters involving coupling between non-adjacent cavities have also been studied, where multi-port rectangular waveguide junctions need to be considered as additional basic blocks. Another design approach for filters is based on the use of evanescent modes [9]. In this technique, the filter basically consists of a hollow waveguide shell that transfers energy between standard waveguide access ports via shunt capacitive elements. Although these filters have a slightly smaller width than conventional filters and operate at frequencies below the cutoff frequency of the main mode, no impressive length reduction has been observed in this type of microwave filters

[10] –

[13] .

[0007] Among all microwave passive components, duplexers and multiplexers have the greatest complexity and are used to connect two or more channels to a common port. They play an important role in satellite systems. Duplexers enable two signals to be transmitted simultaneously on the same communication channel or allow one frequency to be transmitted while another frequency is being received (in this case they are called diplexers). Receiver filters operate on low-power signals, while transmitter filters need to handle high powers. Therefore, duplexers were created based on waveguide technology. In addition, the design of duplexers and multiplexers depends on the type of channel filter, which can be of various topologies such as waveguide manifolds, T-junctions or Y-junctions [8],

[14] -

[17] . Measures need to be taken to prevent the filters from coupling with each other at resonance. Therefore, different factors lead to the large electrical dimensions of these systems, such as the wavelength-scale building blocks, the arrangement of the cavities, and the minimum space required to minimize crosstalk. Summary of the Invention

[0008] The present invention solves the above limitations by providing a microwave or millimeter wave passive device or component according to claim 1 and a method according to claim 83. The present invention also relates to a microwave or millimeter wave passive device or component according to claim 84.

[0009] Further advantageous features can be found in the dependent claims.

[0010] To address the limitations of current microwave filters, an innovative approach is presented here that can be used as an alternative to conventional waveguide technology for creating filters and multiplexers compatible with coaxial, standard waveguide flanges, and / or circular / rectangular antenna feedlines. This innovative approach, based on filters using subwavelength resonant metallic elements (e.g., pins) placed within a cutoff cavity or waveguide, is a miniaturized and alternative approach to waveguide technology, leveraging both the frequency-selective properties of the resonant pins and the inductive-capacitive properties of the main cutoff rectangular cavity or waveguide. The electrical enclosure (the resonant metallic element (e.g., pin or wire)) can be fabricated, for example, via additive manufacturing techniques and attached to, for example, an all-metal structure. Because the dispersion properties of the guided modes are interestingly dependent on the width of the main cutoff cavity or waveguide, a tunable bandwidth (e.g., 1%-30% or even greater (up to 80%)) can be achieved without changing the shape and position of the resonant enclosure.

[0011] The disclosed invention addresses key limitations in the design of ultra-compact microwave bandpass filters, duplexers, and multiplexers. According to the present disclosure, locally resonant metamaterials (LRMs), for example, are enclosed in an all-metal structure and comprise electrically resonant inclusions or elements, such as those achieved through a linear dielectric. All microwave systems used in radar systems, 5G communications, medical devices, automotive radar, radio links, machine-to-machine systems, radio astronomy, and, in particular, satellite communications, can benefit from the present invention in both hollow waveguides and planar structures.

[0012] The innovation of the present disclosure ensures bandwidth adjustability, allowing customizability and / or tunability. The customizability of bandwidth makes it possible to create customized filters according to requirements. Tunability ensures reconfigurable filters. Moreover, since the possibility of simple bandwidth tunability is a special feature of the present disclosure, it can also pave the way for the design and implementation of reconfigurable subwavelength waveguide filters. Reconfigurable bandpass filters

[18] ,

[19] are conventionally implemented based on evanescent mode cavity resonators [9],

[18] -

[23] and are key enabling components of highly versatile RF broadband receivers

[13] ,

[23] . From a system perspective, equally diverse communication, radar, electronic warfare and sensing systems require reconfigurable filters. A non-limiting and exemplary first prototype of the proposed technology was implemented in the Ku band (12-18 GHz), one of the most commercialized frequency bands in satellite communications, used for fixed satellite services (FSS), broadcast satellite services (BSS), and telecommunication broadband services [7], in a wide range of applications and different frequency ranges. The frequency range is not limited to this exemplary frequency range of the Ku band, which is used only for prototyping purposes. Advantages of the apparatus and method disclosed herein relate to the microwave frequency range and the millimeter wave frequency range, for example, generally in the frequency range of 100 MHz to 100 GHz, for example, in particular in the frequency range of 1 GHz to 100 GHz.

[0013] The present invention introduces a new technology for realizing customized ultra-compact and tunable all-metal microwave passive components such as bandpass filters, duplexers and multiplexers. The proposed components can be created, for example, by a metal box containing one or more (substantially or nearly) quarter-wavelength wires connected to its walls. These wires or pins act as coupled subwavelength resonators separated by deep subwavelength distances. By adjusting their geometry and arrangement, these resonators are used to guide and filter electromagnetic energy within the subwavelength volume. In addition to filtering, other functions (such as duplexing or multiplexing) are also possible. It is worth noting that the filtering frequency does not vary with the size of the lateral system or the pin diameter, but depends mainly on the pin height.

[0014] Since the exemplary miniature metal waveguide bandpass filter can be used as a replacement for conventional waveguide technology, many systems, such as radar systems; 5G communications, medical devices, automotive radars, radio links, machine-to-machine systems; radio astronomy; and especially satellite communications, can take advantage of the compactness and lightweightness brought by the present invention. The proposed bandpass filter can be easily designed as narrowband and broadband filters, providing a basic element for designing duplexers and multiplexers with miniaturized structures that can be used in small satellites. The prototype can be fully realized using additive manufacturing, such as selective laser melting and lost wax casting, which uses lightweight and low-loss materials such as aluminum alloys (AlSi10Mg), copper, brass and silver alloys. Therefore, the present invention is compatible with existing high-speed and relatively low-cost manufacturing processes. In order to reduce the risk of insertion loss and porosity effects, silver / gold plating on the interior or inner surface and / or exterior or surface of the device or component of the present invention can be considered.

[0015] Some key advantages of the present invention will be fully explained later in this disclosure.Here, the main advantages of the proposed component or device compared to conventional techniques for realizing microwave passive components are briefly mentioned.

[0016] In addition to the key feature of compactness achieved by the subwavelength LRM enclosed within the waveguide, the proposed waveguide passive device also promises customizable bandwidth and tunability, enabling the realization of narrowband or broadband devices with desired bandwidths ranging from 1% to 30% or greater (up to 80%). This tunability is achieved by simply varying the width of the main waveguide, without adjusting the subwavelength resonators or adding coupling components. This feature opens new avenues for designing reconfigurable filters with adjustable quasi-elliptical transfer functions using waveguide technology. Furthermore, the proposed bandpass filter design procedure is simple, ensuring a customizable type of microwave filter, a key aspect of the present invention. The design and modeling of the filter's RF parameters is not based on resonator circuit models, but rather on tunneling through cascaded subwavelength (sub-λ) resonators using controlled guided mode dispersion. Furthermore, due to the small mode profile of the guided modes, low crosstalk from adjacent waveguides is predictable, significantly leading to compact duplexers with tightly packed channels and miniaturized multiplexers in a small footprint. On the other hand, the high level of suppression due to the hybrid band gap (HBG) of LRMs leads to an improved suppression band of bandpass filters and high isolation between channels in duplexers and multiplexers.

[0017] As described above, the present invention introduces new techniques for the design and synthesis of deep subwavelength filters, duplexers, multiplexers, or other microwave systems using the physical properties of locally resonant metamaterials at microwave frequencies. The ability of locally resonant metamaterials to guide energy or induce slow light at subwavelength scales has been reported

[47] , however, they have never been considered or suggested for practical implementation of microwave filters or duplexers.

[0018] These metamaterials are often studied under the effective medium approximation, mainly exploiting their high refractive index

[28] –

[30] , subwavelength imaging or focusing

[31] –

[34] , or their negative effective properties

[33] ,

[35] –

[38] .

[0019] Resonant metamaterials have been studied in two categories: Epsilon negative dielectrics (ENGs), which exhibit a negative dielectric constant (ε r ), and the magnetic permeability (μ r ) is positive; and Mu negative medium (MNG), which shows a positive ε r and negative μ r

[39] . ENG metamaterials consist of electrically resonant inclusions and are typically used at optical frequencies, whereas MNG metamaterials include magnetically resonant inclusions and are relatively easier to design and fabricate at microwave frequencies. Due to the ease of fabrication of MNG inclusions, such as split ring resonators (SRRs) or complementary split ring resonators (CSRRs), researchers have also realized some types of metamaterial microwave filters on microstrip and coplanar transmission lines

[40] -

[42] . Resonant inclusions on microstrip host dielectrics show strong interactions with electromagnetic waves and can be used as microwave filters when combined with other elements such as series capacitors or shunt inductors. Resonant SRRs and CSRs have been shown to be useful particles for narrowband and broadband filters, respectively

[39] ,

[41] [5]. Nevertheless, these previous examples of metamaterial filters proposed in the literature are based on microstrip or coplanar transmission lines and are therefore incompatible with high-power applications related to antenna feed lines (satellite payloads or radar systems), which require technologies compatible with coaxial or rectangular waveguides. Our invention is different because it is based on a metal cavity, making it compatible with high-power feed lines.

[0020] Recently, the potential for controlling waves in 2D locally resonant metamaterials (LRMs) based on electrically resonant inclusions at microwave frequencies has been introduced in

[43] , which has demonstrated subwavelength wave manipulation capabilities in linear media

[44] –

[46] . In this approach, the physical properties of locally resonant metamaterials are investigated by relying on the Fano interference between the local resonance of the unit cell and the continuation of plane waves (inducing a hybrid band gap). The Fano interference in LRMs is not based on Bragg interference due to the phase delay provided by the wave propagation between two scattering planes, but rather on the non-phase response of the subwavelength resonators near their resonant frequencies. The operating frequency of these systems is due to the properties of the resonators rather than their specific arrangement and is therefore independent of their overall size. Line defect waveguides in LRMs are a good simple example of subwavelength LRM waveguides

[47] , which operate based on tunneling between resonators rather than Bragg interference as in gratings and photonic crystal waveguides

[48] . Although the line defect waveguides developed in the prior art demonstrate subwavelength waveguiding, they have never been applied to construct filters, duplexers, or multiplexers. These waveguides exhibit very narrowband transmission and high group velocity dispersion (GVD) around the line's resonant frequency. Furthermore, the guided modes in

[47] are generated within the bandgap of the LRM, limiting the passband / inhibition band of the device to the bandgap of the LRM. In contrast, the device of the present disclosure is not subject to such limitations and ensures guided modes with wider bandwidth and low dispersion, with a custom passband and a larger inhibition band. Furthermore, the guided modes of the device of the present disclosure are not defect modes.

[0021] The above and other objects, features and advantages of the present invention and the manner of achieving the same will become more apparent, and the invention itself will be best understood from a study of the following description with reference to the accompanying drawings which illustrate some preferred embodiments of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1A shows that at the resonant frequency f r Propagation of an incident wave in a chain of nearby subwavelength resonators. Figure 1B shows the dispersion curve of the 1D locally resonant metamaterial.

[0023] Figure 1C It is shown that the guiding mechanism of the microwave or millimeter wave device or component of the present disclosure relies on both a hollow waveguide and pins enclosed therein.

[0024] Figure 1D The innovative concept of the present disclosure is shown as a locally resonant metamaterial waveguide (LRW) implemented as an exemplary PPW (pin-tube waveguide) structure made of one or several resonant pins inserted into the resonant frequency (f r >f c1 ) in the main tube or waveguide of the propagation mode around it.

[0025] Figure 1E Shows a PPW structure made of one or several resonant pins inserted into the main waveguide and having a resonant frequency (f r <f c2 ) lower than the cut-off frequency of the waveguide.

[0026] Figure 1F Shows (left) a tube with a cut-off frequency of f c , (middle) a 1D resonant metamaterial with a resonant frequency f r , and (right) the interaction between the pins and the tube to generate a guided mode, where f r <f c .

[0027] Figure 1G Shows a pin-tube waveguide operating below the tube cut-off, having different widths (a) W and (b) W', where W < W'. The dispersion curve (solid line) of the sub-wavelength guided mode (solid line) of the PPW with an evanescent tube is shown, where the dashed line shows the local pin resonance. The shaded area shows the cut-off region of the main / hollow waveguide. Figure 1H (Left) Shows the unit cell of a PPW with a periodic boundary condition (PCB) along the main waveguide direction, where 2h r <W. Figure 1H (Right) Shows the band diagram of the structure, where the dashed line is the dispersion curve of the unloaded waveguide with a cut-off frequency f c , and the individual local resonances are around f r = 17 GHz (first type f r >f c ). The shaded area above f o (resonant frequency of the CPPW unit cell) is characterized by HBG.

[0028] Figure 1I Shows (left) a propagating rectangular waveguide loaded with different types of pin arrays, and (right) the transmission spectra of different PPW structures (first type f r >f c ).

[0029] Figure 2A Schematically shows a chain or array of resonant pins in a hollow rectangular waveguide, where f r <f c or 2h r >W, Figure 2B Schematically shows the unit cell of the empty waveguide, and Figure 2C Schematically shows the unit cell of the local resonant metamaterial (LRC) waveguide.

[0030] Figure 3A shows the dispersion curve of an exemplary LRM waveguide (LRW) with a width of W=a=2.5 mm, Figure 3 B shows the dispersion curve of an LRM waveguide (LRW), such as a PPW, with exemplary widths W=a=2.5 mm and W=3a=7.5 mm. Figure 3 C shows the dispersion curves of LRM waveguides (LRW) with exemplary widths W=a=2.5 mm and W=11a=27.5 mm, and Figure 3 D shows the dispersion curves of LRM waveguides (LRW) with exemplary widths of W=a=2.5 mm, W=3a=7.5 mm, and W=11a=27.5 mm.

[0031] Figure 4A An exemplary microwave component or device according to the present disclosure is shown, and more particularly, an architecture including an exemplary connection, which is a coaxial connection (coaxial port) of an exemplary LRW filter or PPW filter is shown. Figure 4B The main design parameters of an exemplary LRW filter are shown, which can be optimized for best coaxial conversion (high return loss), improved frequency selection and less insertion loss.

[0032] Figure 5 The scattering spectra ( S11 and S21 ) of the exemplary bandpass filters of the present disclosure are shown for the optimized parameters of Table 1 .

[0033] Figure 6 Shows different d y The S of an exemplary bandpass filter with a value (width of the waveguide) 21 Scattering spectrum.

[0034] Figure 7 An improved probe structure is shown, where a high return loss is achieved using, for example, a strip antenna, which in this particular example has a width of 2 mm.

[0035] Figure 8 An exemplary microwave or millimeter wave filter according to the present disclosure is shown, including an exemplary simple structure for manually or automatically adjusting the bandpass filter bandwidth.

[0036] Figures 9A to 9D An exemplary microwave or millimeter wave bandpass filter according to the present disclosure is shown, which includes an input metamaterial port and an output metamaterial port (first type PPW), Figure 9E Shown Figure 9D Passband or frequency response of an exemplary filter, which takes advantage of the decreasing distance between the pins of the hollow-core waveguide and the metamaterial port.

[0037] Figure 10An exemplary microwave component or device according to the present disclosure is shown, which is a duplexer including an exemplary Y-junction having a broadband filter as an input port, two narrowband channels, and metal walls.

[0038] Figure 11 Another exemplary microwave component or device according to the present disclosure is shown, which is a duplexer including an input metamaterial port and first and second output metamaterial ports.

[0039] Figure 12A Another exemplary microwave component or device according to the present disclosure is shown, including or consisting of an exemplary T-junction duplexer, using, for example, LRW in an all-metal box, and having an exemplary coaxial port.

[0040] Figure 12B Shown Figure 12A An exemplary duplexer S 21 、S 31 、S 11 spectrum.

[0041] Figures 13A to 13D An exemplary microwave component or device according to the present disclosure is shown, which is a multiplexer, for example, a six-port multiplexer, for example, in the form of a small cylinder (e.g., 42 mm) with one input port in the middle and six radial output ports, of which a coaxial port is shown in this example.

[0042] Figure 13E Shown are the output spectra of the six ports generated by exciting the middle coaxial port of the multiplexer.

[0043] Figure 13F Shown Figure 13A An alternative multiplexer.

[0044] Figure 14 A and 14B show the change in height δh=h j -h i , for example =h3-h2, where the transmission spectra of the six outputs generated by exciting the middle coaxial input of the splitter at δh=0.5mm and δh=0.3mm respectively.

[0045] Figure 15A and 15B Another exemplary microwave component or device according to the present disclosure is shown, which is a multiplexer, for example, a four-port multiplexer, including one input metamaterial port and three output metamaterial ports, thus forming an exemplary triplexer.

[0046] Figure 16A and 16B show direct side and top connection of LRW or any PPW structure to waveguide with the same operating frequency range (e.g. WR75 for Ku band), Figure 16 C and 16D show the use of coaxial lines to couple electromagnetic waves from the slot on top of the waveguide.

[0047] Figure 17A and 17B Another exemplary microwave component or device according to the present disclosure is shown, which includes an antenna feed line and a bandpass filter, having input and output metamaterial ports.

[0048] Figure 18A and 18B Another exemplary microwave component or device according to the present disclosure is shown, which includes an antenna feed, a duplexer, and a metamaterial port.

[0049] Figure 19 Another exemplary microwave component or device according to the present disclosure is shown, which includes or consists of a power splitter, eg, one input and three outputs.

[0050] Figure 20 Another exemplary microwave component or device according to the present disclosure is shown, which includes or consists of an orthogonal mode converter (OMT) including a metamaterial port to combine and split two channels with different polarizations.

[0051] Figure 21A and 21B Another exemplary microwave component or device according to the present disclosure includes or consists of a dual-band filter including a metamaterial port to route two channels in one waveguide with high channel-level isolation. A separation member or wall SW is included between the channels and separates the array of resonant structures.

[0052] Figure 22A and 22B Another exemplary microwave component or device according to the present disclosure is shown that includes or consists of a compact sharp-bend filter.

[0053] Figure 23A An exemplary device or assembly according to the present disclosure is shown, illustrating that the waveguide can have any cross-sectional shape.

[0054] Figure 23B An exemplary device or assembly according to the present disclosure is shown in which a waveguide may be twisted and an array of resonant structures may be gradually tilted along the guiding direction of the waveguide.

[0055] Figure 23C An exemplary device or assembly according to the present disclosure is shown wherein the waveguide includes a sharp bend.

[0056] Figure 23D An exemplary device or assembly including a resonant junction and branches according to the present disclosure is shown.

[0057] Figure 24 Another exemplary microwave component or device according to the present disclosure is shown, which includes or consists of a notch filter.

[0058] Figure 25 Another exemplary microwave component or device according to the present disclosure is shown, which includes or consists of a band-rejection filter.

[0059] Figure 26 Shown are (left) top view and (right) front view of a compact WR75 filter with two pins, and (bottom) measured and simulated results (S21 and S11).

[0060] Figure 27 Shown are (a) a simulated model and (b) a fabricated sample of a 6th-order PPW filter with two coaxial ports on the top and h r =4 mm and W =4 mm, and (c) S-parameters extracted from time-domain full-wave simulations and experiments.

[0061] Figure 28 (a) Simulation results of an unloaded tube and a PPW filter are shown, indicating three main parts: i) subwavelength mode, ii) suppression band, and iii) main mode, (b) S for various W values 21 , meaning different bandwidths.

[0062] Figure 29 Shown are (a) the mode diagram of the structure versus W, and (b) the variation of the fractional bandwidth (passband) of the subwavelength mode versus W.

[0063] Figure 30 The transmission scattering (S) of (a) a cylindrical PPW with a diameter of 8.8 mm, (b) a rectangular PPW with disordered lateral positions, and (c) rectangular and cylindrical PPWs with widths of 6 mm and 8.8 mm, respectively, are shown. 21 ) spectra, and a disordered rectangular PPW with its pins randomly positioned on the Y-axis.

[0064] Figure 31 Shown are (a) direct connection of a PPW to a standard waveguide, and (b) the scattering spectrum of a PPW with a waveguide port.

[0065] Figure 32 Shown are (a) a waveguide port loaded by a resonant pin, and (b) the pin height h p Transmission spectra for various values ​​of S 21 .

[0066] Figure 33 Shown are (a) a CPPW filter including a 4-pin superport and (b) the electric field distribution at 12 GHz.

[0067] Figure 34 Shown are (a) a fabricated PPW filter including a metamaterial port, 3D-printed using aluminum on the right and a silver-plated sample on the left, (b) the scattering spectrum of the PPW filter, and (c) the reduced insertion loss after silver plating.

[0068] Figure 35 (a) to 35(f) illustrate filter devices according to the present disclosure, wherein the pins have different arrangements. Figure 35 (a) to 35(c) show a periodically arranged pin array, Figure 35 (d) to 35(e) show randomly positioned or randomly ordered grouped pins, Figure 35 (f) shows a pin that is reduced in size in one direction, and Figure 35 (g) shows the resulting transmission characteristics.

[0069] Figures 36A to 36D shows that the resonant structure can take many different forms or contours and is not limited to the pin form, Figure 36E Shown Figure 36D The ones shown in the figure have different heights h r The transmission characteristics of the resonant structure.

[0070] Figure 37 Another exemplary filtering device according to the present disclosure is shown, which includes coaxial terminals or probes between multiple metamaterial ports or connectors.

[0071] Figure 38 (a) to 38(b) show filter devices with different hollow waveguide widths, and Figure 38 (c) shows the resulting transfer characteristics of these devices.

[0072] Figure 39 (a) shows filter devices with different lengths, where the elements of the second filter device are compressed in the length direction, resulting in a shorter hollow waveguide length and an oval resonant pin, Figure 39 (b) shows the resulting transmission characteristics of these devices, demonstrating large tolerance to length variations.

[0073] Herein, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. DETAILED DESCRIPTION

[0074] Figures 4 and 6 to 25 show exemplary passive microwave or millimeter wave components or devices 1 according to the present disclosure. Figures 4 and 6 to 9 show exemplary microwave or millimeter wave filters, Figure 10 1 to 12 show exemplary duplexers, and FIGs. 13 to 15 show exemplary multiplexers.

[0075] 4 and 6 to 9 show an exemplary microwave or millimeter wave passive component or device 1 , which is a microwave or millimeter wave bandpass filter 3 .

[0076] Advantages of the devices and methods disclosed herein relate to microwave frequency ranges and millimeter wave frequency ranges, for example, the devices operate in the frequency range 100 MHz to 100 GHz, or for example in the frequency range 1 GHz to 50 GHz, or for example in the satellite communication frequency range.

[0077] For example, Figure 8 As can be seen, the microwave or millimeter wave passive device or component 1 or the microwave or millimeter wave bandpass filter 3 includes a microwave or millimeter wave waveguide, such as a hollow or planar waveguide 5, and also includes a resonant structure 9 or at least one or more arrays 7 of coupled resonant structures 9.

[0078] The resonant structure 9 is, for example, a radiation coupling resonant structure.

[0079] Resonant structures 9 (or adjacent resonant structures 9) couple via the electric and magnetic fields (or modal electric and magnetic fields) generated by these resonant structures. Energy is coupled between one resonant structure 9 and another or from one resonant structure 9 to another through this coupling.

[0080] The hollow core waveguide 5 is configured to support an evanescent mode or wave of microwave or millimeter electromagnetic radiation. The hollow core waveguide 5 is, for example, a single mode hollow core waveguide.

[0081] The hollow waveguide 5 has a waveguide cutoff frequency f c , below which the hollow waveguide 5 does not support the propagation mode or wave. For example, at the cutoff frequency f c Hereinafter, the transverse electric TE mode of microwaves or millimeter electromagnetic radiation does not propagate in the hollow waveguide 5 .

[0082] Cutoff frequency f c For example, it is the lowest cutoff frequency of the hollow waveguide 5. The structure or size of the hollow waveguide 5 determines the cutoff frequency f c The cutoff frequency f of the hollow waveguide 5 is c It is the frequency when the hollow waveguide 5 is empty or when there is no resonant structure 9 inside the waveguide 5 .

[0083] The resonant frequency f of the resonant structure 9 or the array 7 or each resonant structure 9 of the array 7 r Lower than or less than the cutoff frequency f of the hollow waveguide 5c .

[0084] The hollow waveguide 5 can be considered to define a tube or tube structure 5. Therefore, the passive device or component 1 can be considered to include or consist of a main hollow (metal) tube 5 loaded with a resonant structure or pin 9, which can be designated as a pin-tube waveguide PPW. When discussing the passive device or component 1, this document will refer to the pin-tube waveguide PPW, and these terms are interchangeable. It should be noted that the tube or tube structure 5 is not limited to a cylindrical shape.

[0085] Each resonant structure 9 is configured to provide or generate at least one local resonator LR. The local resonators LR (or resonators) of each resonant structure 9 are radiation-coupled or directly electromagnetically coupled to each other. The local resonators LR are local to the resonant structure 9.

[0086] The resonator LR may, for example, consist of electric charges or charged particles which oscillate or resonate in the resonant structure 9 in the presence of microwave or millimeter-wave electromagnetic radiation or microwave or millimeter-wave electromagnetic waves.

[0087] The array 7 provides, for example, an array of a plurality of radiation-coupled local resonators LR or direct electromagnetically coupled local resonators LR.

[0088] The hollow-core waveguide 5 is configured to support at least one or more evanescent modes or waves of microwave or millimeter electromagnetic radiation that couple or interact with the local resonators LR of the resonant structure 9 to provide subwavelength guided modes SWGM in the microwave or millimeter wave passive device 1. The evanescent modes or waves of the hollow-core waveguide 5 allow energy to couple to or act within one resonant structure 9 to another.

[0089] The subwavelength guided mode SWGM of the device 1 defines the microwave or millimeter wave frequency passband FPB of the microwave or millimeter wave passive device 1 (see, for example, Figure 6 ).

[0090] The resonant structure 9 is coupled by radiation and / or direct electromagnetic coupling. That is, the resonant structure 9 is a directly electromagnetically coupled resonant structure 9. The electric and magnetic fields (or modal electric and magnetic fields) of the resonant structure 9 (or adjacent resonant structures 9) are directly coupled (or directly coupled to each other). There is direct electric and magnetic coupling of the resonant structure 9.

[0091] With direct coupling, coupling occurs between resonant structures 9 (eg, open resonators) that are placed close or proximate to each other (eg, at a sub-wavelength distance), and their electric and magnetic fields can be directly coupled.

[0092] As described further below, the resonant structure 9 is, for example, an open resonator allowing direct coupling.

[0093] The coupling can be exploited or influenced to adjust the bandwidth of the device via, for example, the evanescent mode of the waveguide 5 .

[0094] The hollow waveguide 5 includes a first wall structure 11 and a second wall structure 15, both of which extend in the guiding direction GD. The hollow waveguide 5 also includes an interconnecting base or wall structure 17 extending between the first wall structure 11 and the second wall structure 15. The first wall structure 11 and the second wall structure 15 and the interconnecting wall structure 17 enclose one or more arrays 7. The first wall structure 11 and the second wall structure 15 extend from the interconnecting wall structure 17 to enclose the array 7. The height or extension of the first wall structure 11 and the second wall structure 15 is, for example, greater than the height h of the resonant structure 9. The first wall structure 11 and the second wall structure 15 extend, for example, substantially perpendicular to the interconnecting wall structure 17 to enclose the array 7.

[0095] The passive microwave or millimeter wave device 1 further comprises an enclosure or ceiling EWS extending between the first wall structure 11 and the second wall structure 15 (see, for example, Figure 4A and 8 The enclosure EWS is positioned opposite to the interconnection base 17 .

[0096] The first wall structure 11 and / or the second wall structure 15 may define a stationary structure. The first wall structure 11 and / or the second wall structure 15 may, for example, be attached to an interconnecting wall structure 17. Alternatively, the first wall structure 11 and / or the second wall structure 15 are mobile and configured to be displaced relative to the array 7. The first wall structure 11 and / or the second wall structure 15 may, for example, be movable or displaced relative to the array 7 to increase or decrease the distance between the wall structures 11, 15 and the array 7 or the local resonant structure 9.

[0097] The first wall structure 11 and the second wall structure 15 may for example be part of a continuous wall or a surrounding wall surrounding the array 7. The first wall structure 11 and the second wall structure 15 are interconnected by other parts of the continuous wall or the surrounding wall.

[0098] The width W of the hollow waveguide 5 is less than the height h of one or each resonant structure 9 in the array. r The width W of the hollow waveguide 5 is, for example, the width between the first wall structure 11 and the second wall structure 15 .

[0099] The width W of the hollow waveguide 5 can be tapered or gradually varied, for example, along the guiding direction GD. The height h of the hollow waveguide between the enclosure EWS and the interconnect base 17 can also be tapered or gradually varied along the guiding direction GD. The tapering allows for improved matching, reduced insertion loss, and a sharp rolloff of the frequency passband distribution.

[0100] An array 7 (or multiple arrays) of resonant structures 9 is enclosed within or spatially contained within the hollow waveguide 5. The array 7 (or multiple arrays) of resonant structures 9 is surrounded or surrounded by the wall structures 11, 15, the interconnecting base 17, and the enclosure or ceiling EWS. The enclosure EWS, the interconnecting base 17, and the first and second wall structures 11, 15 define a main cavity in which the array 7 of coupled resonant structures 9 is located. For example, the enclosure EWS is in physical contact with the first and second wall structures 11, 15 to define the main cavity. For example, the interconnecting base 17 is in physical contact with the first and second wall structures 11, 15 to define the main cavity. For example, the enclosure EWS, the interconnecting base 17, and the first and second wall structures 11, 15 completely surround or surround the array 7 of coupled resonant structures 9.

[0101] For example, the first wall structure 11, the second wall structure 15, the interconnected base 17 and the enclosure or ceiling EWS may define a continuous enclosure or surround, or a completely closed enclosure or surround, which surrounds or encloses at least one array 7 or resonant structure 9. For example, the enclosure or surround is continuous or completely closed in a direction that is (approximately) perpendicular or non-parallel to the extension direction of the at least one array 7. The continuous enclosure or surround, or the completely closed enclosure or surround defines an inner cavity or chamber in which the at least one array 7 is located. For example, the first wall structure 11, the second wall structure 15, the interconnected base 17 and the enclosure or ceiling EWS may define a completely laterally closed body.

[0102] For example, a continuous or fully enclosed enclosure may define at least one first opening and / or at least one second opening configured to receive (or be attached to) a port, terminal, or connector 19A, such as a metamaterial port or metamaterial connector discussed further below.

[0103] An array 7 (or a plurality of arrays) of resonant structures 9 enclosed inside the hollow waveguide 5 (and an array of a plurality of coupled local resonators LR) is configured to provide or generate at least one microwave or millimeter wave frequency passband FPB of the passive microwave or millimeter wave device 1 (see, for example, Figure 6 ).

[0104] For example, the frequency passband FPB provides or generates at least one selected microwave or millimeter wave signal that can be output from or by the filter 3. For example, the selected microwave or millimeter wave signal is filtered or selected from a wider range of microwave or millimeter wave signals at microwave or millimeter wave frequencies input to, propagating at, or passing through the device 3, e.g., a wider or broader frequency range than the passband FPB.

[0105] The array 7 extends into the interior of the waveguide 5. For example, the array 7 extends in the extension direction or guiding direction GD of the waveguide 5. For example, the guiding direction GD may be the extension direction of the waveguide 5 or a portion of the waveguide 5. For example, the array 7 may extend in a direction substantially perpendicular to the extension direction of the waveguide 5. The array 7 may extend toward the first wall structure 11 and / or the second wall structure 15.

[0106] The array 7 is located between the first wall structure 11 and the second wall structure 15. Each resonant structure 9 extends from the interconnecting wall structure 17 into the microwave waveguide 5 to define a microwave sub-wavelength resonant structure or a deep sub-wavelength resonant structure.

[0107] The resonant structures 9 of the array 7 may extend periodically or aperiodically inside the hollow waveguide 5. For example, the periodicity, radius or height h of the resonant structure 9 may be r The function of the device 1 can tolerate the periodicity, radius or height h between the resonant structures 9 to a large extent. r The resonant structures 9 of the array 7 may be arranged in a linear or curved manner, and / or in one or more rows.

[0108] The plurality of resonant structures 9 may alternatively or additionally be randomly positioned or grouped in a random order. Figure 35 (d) and 35(e) show exemplary and non-limiting random arrangements.

[0109] For example, the array 7 may be or define a 1D array or a linear array. The 1D array or linear array may be extended and branched into a plurality of 1D arrays or linear arrays (or at least a first and a second 1D array or linear array) extending in a direction different from the initial extension direction of the initial array 7.

[0110] For example, the array 7 of resonant structures 9 may define an achiral array of resonant structures 9 and coupled local resonators.

[0111] The resonant structure 9 defines or has a dimension that is much smaller than the free space wavelength of the applied microwave or millimeter wave electromagnetic radiation. For example, the height h of the structure extending from the interconnecting wall structure 17 to the local resonant structure 9 in the waveguide 5 is r is smaller than the wavelength of the applied microwave or millimeter wave electromagnetic radiation or the predetermined operating frequency range of the device 1. For example, the cross-sectional diameter d of the structure 9 is cs (or cross-sectional thickness and width) is also smaller than the wavelength of the applied microwave electromagnetic radiation. For example, all constituent elements of the resonant structure 9 are of sub-wavelength size.

[0112] The resonant structure 9 (and the resonator or resonators therein for local radiative coupling) is configured to couple with an incoming microwave or millimeter wave electromagnetic field or signal, such as provided to the waveguide 5 via a port or terminal 19. For example, a sub-wavelength height h r It can have an expansion value (substantially) λ / 4, λ / 6, λ / 8, λ / 10 or less. For example, the sub-wavelength diameter d cs (or cross-sectional thickness and width) may be (substantially) λ / 16, λ / 24, λ / 32, λ / 40 or less.

[0113] The resonant structures 9 are configured to couple to each other. For example, adjacent or consecutive resonant structures 9 are separated by a microwave or millimeter wave subwavelength distance. For example, consecutive resonant structures 9 are separated by a distance of λ / 4, λ / 6, λ / 8, λ / 10 or less.

[0114] For example, the resonant structure 9 is a passive resonant structure 9. The local resonator LR is a local passive resonator.

[0115] The resonant structure 9 may include or consist of a metal resonant element.

[0116] For example, each resonant structure 9 comprises or consists of a sub-wavelength extension or length h r Each resonant structure 9 may comprise or consist of a resonant metal material or a resonant metamaterial configured to generate at least one or more local resonators LR or include at least one or more local resonators LR.

[0117] For example, the resonant structure 9 (and the local resonator LR) can be configured to generate at least one band gap or hybrid band gap in the frequency characteristics or dispersion curve that characterizes microwave or millimeter wave propagation in the device 1. The array 7 of coupled resonant structures 9 is configured to provide a microwave or millimeter wave frequency stopband FSB, while the frequency of the subwavelength guided mode SWGM of the device 1 is outside the frequency stopband FSB or below (less than) the frequency stopband FSB.

[0118] The resonant structure 9 inside the hollow waveguide is also configured to provide or generate at least one microwave or millimeter wave frequency passband FPB (see, for example, Figure 6 ).

[0119] The resonant structure or structures 9 are configured to provide or generate a resonant frequency having or defining a resonant frequency f r The local resonator 9. The resonance frequency f of each local resonator LR r The length or extension h of the resonant structure 9 r The cut-off frequency of the device 1 or the microwave bandpass filter 3 is defined by the length or elongate extension h of the resonant structure 9 .

[0120] Changing the elongation h of the resonant structure 9 inside the hollow waveguide r The spectral position of the frequency stopband FSB generated by the microwave passive component 1 (or the spectral position of the sub-wavelength guided mode SWGM of the component 1 ) can be changed.

[0121] The frequency stopband FSB of the microwave passive device 1 and the bandwidth of the subwavelength guided mode SWGM are also extended by the length or extension h of the resonant structure 9. r The frequency of the subwavelength guided mode SWGM of the device 1 is lower than or less than the resonant frequency f of the resonant structure 9 of the array 7. r .

[0122] As mentioned above, the resonant frequency f of the resonant structure 9 is r Lower than or less than the cutoff frequency f of the hollow waveguide 5 c Cut-off frequency f c and the resonant frequency f r The frequency difference between the two is set or determined so that the propagation mode or wave of the hollow waveguide 5 affects the local resonance LR of the resonant structure 9 to determine or modify the frequency passband or bandwidth of the device 1. c and f r The relative values ​​of are determined in order to shape the dispersion curve of the subwavelength guided mode of the device 1.

[0123] For example, the or each resonant structure 9 may comprise or consist of an elongate wire or pin. The elongate wire or pin may comprise or consist of at least one metal, for example brass, copper, silver or aluminium.

[0124] For example, the resonant structure 9 may comprise or consist of a conductive or metallic resonant structure. For example, the resonant structure 9 may comprise or consist of a (small) electrical open resonator, for example defined or provided by a straight line, a spiral or a helix. The resonant structure 9 may define or be an open resonator, comprising or consisting of a line or a solid conductive / metal body extending to define a specific shape, non-limiting examples of which may be found in Figures 36A to 36D For example, the resonant structure 9 is not a closed resonator such as a cubic cavity or a cylinder.

[0125] The resonant structure 9 is not limited to a straight rod, pin or wire, but can take or define many different shapes. For example, the resonant structure 9 can define a spiral, helical, annular, tubular or ring structure or form. Figures 36A to 36D The resonant structure 9 may comprise or consist of a solid conductive or metallic body extending from the surface of the hollow waveguide 5 to define a loop, such as a circular or rectangular loop or a spiral or helical extension ( Figures 36A to 36D ).

[0126] For example, the resonant structure 9 may be tilted or oriented, e.g. Figure 36C As shown in .

[0127] The resonant structure 9 may include or consist of a solid element or body (not a hollow / cavity-less element or body) that is extended to define a desired shape, such as those exemplary shapes described above.

[0128] For example, the array (or grouping) 7 may include resonant structures 9 having a plurality of different shapes.

[0129] For example, the resonant structure 9 (eg, a rod, pin, or wire) may have or define different cross-sectional shapes. For example, Figure 35 (f) shows an oval or elliptical cross-sectional shape. The solid conductive or metallic body extending from the surface of the hollow waveguide to define the desired form of the resonant structure 9 may have different cross-sectional shapes, for example Figure 36B Circular or oval as shown in, or as Figure 36C and 36D The rectangle shown in .

[0130] For example, the array 7 (or a subarray thereof) may comprise N resonant structures 9 , eg, 2≦N≦20, eg, N=5, 6, 7, or 8.

[0131] The waveguide 5 may also include or consist of at least one metal, such as brass, copper, silver, copper, silver, or aluminum. For example, the microwave waveguide 5 may include or consist of a hollow waveguide or a hollow metal waveguide. For example, the microwave waveguide 5 may define a rectangular waveguide or a cylindrical waveguide. These waveguide forms are provided as non-limiting examples.

[0132] The width W of the waveguide 5 defined by the first wall structure 11 and the second wall structure 15 or the distance d between the array 7 and the first wall structure 11 and / or the second wall structure 15 y The bandwidth of the microwave or millimeter wave passband FBP of the filter 3 is defined. The microwave bandpass filter 3 is configured to define the bandwidth of the microwave or millimeter wave passband FPB by changing the cutoff frequency of the hollow waveguide 5.

[0133] This is achieved, for example, by the first wall structure 11 and / or the second wall structure 15 being movable and configured to be displaced relative to the array 7, as described above.

[0134] Figure 8A non-limiting example of a displacement system DS is shown, which includes a screw 21A and an external member 23A for manually or automatically setting or reconfiguring the bandwidth of the microwave or millimeter wave passband FPB and the filter 3 by changing the cutoff frequency of the hollow waveguide 5. The external member 23A is maintained in a fixed position on the device 3, and the first wall structure 11 is displaceable relative to the external member 23A and the interconnected wall structure 17. The displacement system DS may also include at least one spring (not shown) interconnected and located between the external member 23A and the first wall structure 11 to maintain the position of the first wall structure 11 and allow the first wall structure 11 to move back toward the external member 23A when the screw 21A is rotated outward.

[0135] Figure 8 The exemplary embodiment of FIG. 1 shows the internal components of the device 1 by removing the base plate / cover (interconnecting wall structure 17). Although the pins 9 appear to be suspended in air, they are connected to the ground plane (interconnecting wall structure 17), which is not shown in the figure for illustration purposes only. The package EWS is thus Figure 8 is visible.

[0136] For example, a screw 21A is screwed in through an external member 23A to contact the first wall structure 11. Rotation of the screw 21A increases or decreases the distance between the array 7 and the first wall structure 11, allowing the bandwidth of the microwave or millimeter passband FPB and the filter 3 to be changed. The displacement system DS may additionally include another screw 21B and another external member 23B (and a spring) that are arranged in the same manner to displace the second wall structure 15.

[0137] For example, a screw may be connected to the walls 11 and 15 by means of a small ball or bearing at the end of the screw. The bearing and ball allow the screw to turn and pull the movable wall with it.

[0138] The displacement or adjustment may be performed manually or by using electrical or mechanical means. For example, the first wall structure 11 and the second wall structure 15 may comprise or consist of continuous or planar metal walls or plates, such as Figure 8 The surface of the wall structure facing the array 7 may be planar or non-planar. For example, the surface of the wall structure may extend to define a non-planar surface or surface whose contour varies.

[0139] Optionally, the passive microwave or millimeter wave device 1 may additionally include a resonant metamaterial located between the array 7 of coupled resonant structures 9 and the first wall structure 11 on one side of the hollow waveguide 5, and a resonant metamaterial located between the array 7 of coupled resonant structures 9 and the second wall structure 15. The resonant metamaterial is configured to provide or generate a local resonator.

[0140] The resonant metamaterial may include or consist of a plurality or a group of elongated electrical conductors. The elongated electrical conductors define microwave subwavelength elongated electrical conductors. For example, the electrical conductors are attached to and extend from the interconnected wall structure.

[0141] The electrical conductor defines a microwave subwavelength structure (height and cross section). For example, the height of the body extending to the waveguide 5 is greater than the height h of the resonant structure 9.

[0142] The elongated electrical conductors extend in (substantially) the same direction as the resonant structure 9. For example, the plurality of elongated electrical conductors may be randomly positioned or grouped in a random order.

[0143] The elongated electrical conductor may include or consist of at least one metal, such as brass, copper, silver or aluminum.

[0144] The inclusion of a resonant metamaterial between the array 7 and the hollow waveguide walls is optional. For example, the hollow waveguide 5 may be free of resonant metamaterial or artificial walls between the hollow waveguide walls. For example, the hollow waveguide 5 may be free of resonant metamaterial or artificial walls between the at least one array 7 and the first wall structure 11 of the coupled resonant structure 9, and may be free of resonant metamaterial or artificial walls between the at least one array 7 and the second wall structure 15 of the coupled resonant structure 9.

[0145] For example, the microwave or millimeter passive component 1 and filter 3 may include a first terminal or probe 19A and a second terminal or probe 19B that allow microwave electromagnetic fields or signals to be input and output to and from the waveguide 5 and filter 3 .

[0146] For example, the array 7 is located completely or partially between the first terminal 19A and the second terminal 19B.

[0147] The first terminal or probe 19A and / or the second terminal or probe 19B may include or consist of a coaxial terminal or probe, or alternatively may include or consist of a strip terminal or probe. The terminal 19 may alternatively include or consist of a waveguide or waveguide port, such as a rectangular waveguide. As previously mentioned, the microwave or millimeter passive component or device 1 or waveguide 5 of the present disclosure further includes, for example, an enclosure or surrounding wall structure EWS positioned opposite to the interconnecting wall structure 17 (see, for example, FIG. Figure 4A and 4B ). The surrounding wall structure EWS extends between the first wall structure 11 and the second wall structure 15. For example, the terminal 19 can extend from the surrounding wall structure EWS into the waveguide 5. The surrounding wall structure EWS can define or include an opening that extends completely through the surrounding wall structure EWS, and the terminal 19 extends through the opening and enters the waveguide 5 (for example, as shown in FIG. Figure 4A and 4B ), or a (rectangular) waveguide is attached to the opening to provide and receive microwave signals.

[0148] Alternatively, the terminals 19 may be provided by the interconnecting wall structure 17 in the same manner.

[0149] The device 1 may include at least one or more lateral openings LO1, LO2 for coupling with terminals or ports to provide microwave or millimeter wave signals into the device 1 or to extract microwave or millimeter wave signals from the device 1 (see, for example, Figure 12A 、 16 A, 16B). For example, the waveguides may be connected to the side openings LO1, LO2, such as input and output waveguides.

[0150] For example, the lateral openings (or ports) LO1, LO2 may be defined by the enclosure EWS, the interconnecting base 17 and the first and second wall structures 11, 15 (or any one of the enclosure EWS, the interconnecting base 17 or the wall structures 11, 15) and located in front of or relative to at least one array 7 of resonant structures 9.

[0151] For example, the lateral openings (or ports) LO1, LO2 may also be formed by the lateral ends LE of the device 1 (see, for example, Figure 12A 、 16 A, 16B) are defined. For example, in the embodiment, Figure 8 The coaxial input and output 19A, 19B of the device 1 can be connected to Figure 8 The lateral ends LE of the device 1 define openings instead of input and output terminals.

[0152] The device 1 may include connection means for connecting the input and output terminals / ports to the device 1. For example, the device 1 may include flanges and fastening means, such as screws, for attaching to corresponding flanges of the input and output terminals / ports. The input and output terminals / ports may alternatively be integrally attached to the device 1.

[0153] In one embodiment, the microwave or millimeter wave passive device 1 includes at least one connector or coupler 19A, 19B (e.g., Figures 9A to 9D ), which includes a resonant metamaterial 9B. The signal connectors or ports are designated as metamaterial ports or metamaterial connectors 19A, 19B. The microwave or millimeter wave passive device 1 includes at least one metamaterial port or metamaterial connector 19A, 19B. Figures 32 to 34 Non-limiting exemplary embodiments of a metamaterial port or metamaterial connector are shown.

[0154] The metamaterial port or connector 19A, 19B includes a hollow-core waveguide 5B enclosing a plurality of resonant structures 9B or coupled resonant structures 9B. For example, the coupled resonant structures 9B are radiative coupled resonant structures 9B or direct electromagnetic coupled resonant structures 9B (as previously explained with respect to the resonant structures 9 of the hollow-core waveguide 5). The plurality of coupled resonant structures 9B form a cluster or grouping of coupled resonant structures 9B. For example, the hollow-core waveguide 5B is a single-mode hollow-core waveguide, or alternatively, a multi-mode hollow-core waveguide.

[0155] The metamaterial ports 19A, 19B include a first connection means or interface C1 attached to, integral with, or integrated with the hollow waveguide 5 of the device 1, and a second connection means or interface C2 configured to be attached to another component, device, or object. For example, the connection means C1, C2 include or consist of a waveguide flange FL. For example, the waveguide flange FL may include holes to allow attachment via fastening means such as screws or nuts and bolts.

[0156] The hollow waveguide 5B encloses a plurality of coupled resonant structures 9B located therein so as to face or be adjacent to the array 7 of the device 1 when the metamaterial ports 19A, 19B are attached to the device 1 .

[0157] For example, when the metamaterial ports 19A, 19B are attached to the device 1, at least one or more resonant structures 9B of the metamaterial ports 19A, 19B are separated from the array 7 of resonant structures 9 by a microwave or millimeter wave subwavelength distance. For example, the separation distance has a value of λ / 4, λ / 6, λ / 8, λ / 10, or less.

[0158] The resonant structure 9B is the same as the resonant structure previously described with respect to the device 1, however, the resonant frequency f of the resonant structure 9B is, for example, r The resonant frequency of the resonant structure 9 of the array 7 of the device 1 is different.

[0159] Compared to other couplers / connectors such as standard waveguides (e.g. WR75), the metamaterial ports 19A, 19B allow for improved matching efficiency with the device 1. The hollow waveguide 5b is loaded (e.g. at a location that will be close to the array 7 of the device 1) with a plurality of resonant structures 9B, e.g. Figures 9A to 9D The resonant structure 9B is used as a local resonant metamaterial with a resonant frequency f r Higher than or greater than the resonant frequency f of the resonant structure 9 of the microwave or millimeter wave passive device 1 r The resonant structure 9B has a resonant frequency f r It is also higher than the cutoff frequency of the main hollow waveguide 5B of the metamaterial ports 19A, 19B. For example, the height of the resonant structure 9B of the metamaterial port is less than the height of the resonant structure 9 of the device 1. This allows the desired frequency range or band to be transferred to the device 1.

[0160] The resonant frequency f of the resonant structure 9 r For example, within the frequency range in which the waveguide 5B supports the propagation of a transverse electric TE mode or a single propagation of a transverse electric TE mode.

[0161] The metamaterial ports 19A, 19B ensure filtering of microwave or millimeter wave signals passing or propagating through them and are used to implement low-pass or band-pass filters. The metamaterial ports 19A, 19B allow efficient coupling of electromagnetic waves from, for example, a standard waveguide (e.g., WR28) to the filter 3 or the passive device 1. Figure 9E As can be seen in FIG, the metamaterial ports 19A, 19B implement a low-pass or band-pass filter, so that the frequency distribution of the signal has low insertion loss and sharp attenuation (steep slope of the passband at both sides).

[0162] Metamaterial ports 19A and 19B provide a transition medium that creates poles (transmission band peaks) in the passband and zeros (transmission band minima) in the rejection band. Energy is efficiently coupled from, for example, a standard waveguide through metamaterial ports 19A and 19B to device 1 near or around the pole frequencies. The dimensions of pins 9 and the distance between them are adjusted to allow one or more poles to pass at the desired frequency and to allow the zeros in the rejection band to filter out undesired frequencies.

[0163] like Figures 9A to 9D As shown in , the number of pins / resonant structures 9B can be varied, and their relative arrangement can be arranged in different patterns. The arrangement can be periodic or aperiodic. The dimensions (height and / or cross-sectional thickness) of the pins / resonant structures 9B and / or the distance or separation between them are adjusted and determined to define a filtering curve over frequency, the filtering curve passing through the frequency values ​​of the frequency passband FPB of the device 1 and causing a zero or minimum at a frequency value, for example, higher than or greater than the frequency passband FPB of the device 1. A zero or minimum is caused at a frequency located in the suppression band of the device 1.

[0164] The resonant structures 9B may be arranged in a linear or curved manner, and / or in one or more rows.

[0165] The arrangement of the plurality of resonant structures 9B in the main propagation waveguide 5B is determined in accordance with the frequency passband FPB of the passive device 1 (or the frequency of the sub-wavelength guided mode of the passive device 1) so as to filter out or remove frequencies above or greater than the frequency passband FPB of the passive device 1 (or the frequency range of the sub-wavelength guided mode of the passive device 1) and allow frequencies within the frequency passband FPB to pass through the device 1. Therefore, the arrangement of the plurality of resonant structures 9B is varied to adjust the filtering profile to achieve desired matching efficiency with the device 1, as well as low insertion loss and sharp attenuation.

[0166] For example, Figures 9A to 9DAs shown in FIG, the device 1 includes a first metamaterial port 19A, which includes a plurality of coupled resonant structures 9B, which are enclosed inside a hollow waveguide 5B and configured to couple or transmit electromagnetic waves into the hollow waveguide 5 of the microwave or millimeter wave passive device 1. The device 1 also includes a second metamaterial port or connector 19B, which similarly includes a plurality of coupled resonant structures 9B configured to transmit electromagnetic waves outside the device 1. The second metamaterial port or connector 19B is similarly used to implement a low-pass or band-pass filter to provide desired matching efficiency, low insertion loss and sharp attenuation relative to the signal coupled from the device 1 to a subsequent component (such as a standard waveguide) connected to the device 1. For example, the arrangement of the plurality of resonant structures 9B in the propagation main waveguide 5B of the second metamaterial port 19B can be the same as Figure 9A The arrangement of the first metamaterial port 9A shown in FIG is different to obtain a sharp attenuation of the output signal.

[0167] The hollow waveguide 5B of the metamaterial port 19A, 19B is configured to support a (or at least one) transverse electric TE mode of microwave or millimeter electromagnetic radiation. For example, the hollow waveguide 5B of the metamaterial port 19A, 19B is configured to support a single propagating transverse electric TE mode.

[0168] The hollow waveguide 5B comprises a first wall structure 11B and a second wall structure 15B, an interconnection base or wall 17B extending between the first wall structure 11B and the second wall structure 15B, and an enclosure or ceiling EWSB extending between the first wall structure 11B and the second wall structure 15B. The enclosure EWSB is positioned opposite the interconnection base 17B.

[0169] Multiple coupled resonant structures 9B enclosed within the hollow-core waveguide 5B are configured to provide coupled local resonators LR and at least one frequency stopband FSB. The multiple coupled resonant structures 9B are located between a first wall structure 11B and a second wall structure 15B. Each resonant structure 9B extends from an interconnecting base 17B of the hollow-core waveguide 5B into the hollow-core microwave waveguide 5B to define a subwavelength resonant structure. Successive resonant structures are separated by a subwavelength distance.

[0170] The enclosure EWSB and the interconnect base 17B physically contact the first wall structure 11B and the second wall structure 15B to define a main cavity in which the plurality of coupled resonant structures 9B are located.

[0171] The resonant frequency f of the resonant structure 9 of the array 7 of the device 1 is r The resonant frequency f of the resonant structure 9B of the plurality of coupled resonant structures 9B of the first and / or second metamaterial ports 19A, 19B is lower than the resonant frequency f of the resonant structure 9B of the plurality of coupled resonant structures 9B of the first and / or second metamaterial ports 19A, 19B. rThe resonant frequency of the resonant structures 9B in the plurality of coupled resonant structures 9B of the first and / or second metamaterial ports 19A, 19B is higher than the cutoff frequency of the hollow waveguide 5B of the first and / or second metamaterial ports 19A, 19B.

[0172] For example, the resonant frequency f of the resonant structure 9B is r The hollow waveguide 5B supports the frequency range of the transverse electric TE mode of microwave or millimeter electromagnetic radiation.

[0173] The width W of the hollow waveguide 5B of the first and / or second metamaterial port MP greater than the height h of the resonant structure 9B or each resonant structure 9B of the first metamaterial port r Twice the width W MP The resonant structure 9B extends between the first wall structure 11B and the second wall structure 15B. The height h of the resonant structure 9B is r The height h of the resonant structure(s) 9B of the first metamaterial port 19A extends between the enclosure EWSB and the interconnect base 17B. r , the cross-sectional width / thickness of the resonant structure(s) 9B, the distance between the resonant structures 9B and the grouping pattern / arrangement of the resonant structures 9B define the frequency or frequency range that allows the selected microwave or millimeter wave signal to enter the microwave or millimeter wave passive device 1 .

[0174] The height h of the resonant structure 9B of the second metamaterial port r The cross-sectional width / thickness of the resonant structure(s) 9B, the distance between the resonant structures 9B of the second metamaterial port 19B, and the grouping pattern / arrangement of the resonant structures 9B define the frequency or frequency range at which the selected microwave or millimeter wave signal is transmitted out of the microwave or millimeter wave passive device 1. The size, dimensions, and arrangement of the resonant structures inside the hollow waveguide 5B allow the size of the suppression band and the suppression level to be defined.

[0175] As previously mentioned, the coupled local resonant structures 9B may be arranged in a periodic or aperiodic pattern, or randomly arranged inside the hollow waveguide 5B.

[0176] The general physical phenomena occurring in artificial systems consisting of far-field coupled local resonators LR can be understood in a simple way by considering two coupled oscillators with similar single resonance frequencies. The main consequence of radiative coupling is the modal frequency splitting of the system of two oscillators. It is therefore conceivable that when more than two oscillators are considered, a frequency window opens in which no waves propagate. In contrast to photonic crystals, this band gap is not the result of Bragg-type destructive interference, but rather stems from the fact that the unit cell has a frequency band gap at its resonance frequency (f r) is like a mechanical mass spring that cannot follow too fast an excitation, and is also similar to the polaron phenomenon in quantum mechanics. A schematic diagram of a system with coupled local resonance LR is shown in Figure 1A and results in a frequency splitting of the hybrid band gap

[56] ,

[57] in Figure 1B Shown in.

[0177] Therefore, the band gap frequency f r is not determined by the spacing of the periodic array, but by the frequency of the local oscillator, so it can be obtained by coupling the wave to a frequency f≈f r The local resonance LR is used to control the wave at f r The resonance line medium 9 composed of an electric enclosure with a resonance frequency of f0 shows the following Figure 1B The dispersion curve is shown in .

[0178] In contrast to locally resonant metamaterial line defect waveguides

[47] , the present disclosure relates to a new waveguide mechanism that provides a design framework for a wide range of passive devices with tunable frequency passbands and stopbands. The structure of the device 1 comprises a main hollow waveguide or metal tube 5 loaded with small metallic resonant elements, e.g., with (thin) resonant pins 9 to form a pin-tube waveguide PPW or a composite pin-tube waveguide CPPW, e.g. Figures 1C to 1F The guiding mechanism of the device 1 is influenced or determined by the pin 9 and the tube or waveguide 5 in which the pin 9 is located. The height h of the pin r The size / dimensions of the tube (width W, height h) determine the zeros and poles of the system of the device 1, ie the passband FPB and the stopband.

[0179] Two parameters that play an important role in PPW design are the h of the tube 5 and the r and width W, which respectively determine the operating frequency f of the device 1 o and bandwidth BW.

[0180] The diameter (D = 2r) of pins 9 and their spacing a can be reduced as manufacturing permits. Diameter D and spacing a are significantly smaller than the wavelength λ of the millimeter-wave or microwave electromagnetic waves for which the device is intended to operate. The subwavelength size of diameter D enables the creation of miniaturized microwave or millimeter-wave devices 1. The guiding mechanism in PPWs is based on direct electromagnetic coupling of pins 9 (acting as subwavelength resonators), which is influenced or controlled by the cutoff frequency and propagation characteristics of the main tube 5.

[0181] Pin-tube waveguide PPW can be divided into two categories, such as Figure 1D and 1E As shown in . In the first category ( Figure 1D ) in which the waveguide or tube 5A is or defines the propagation medium and is the propagation subject, whereas in the second type ( Figure 1E) In it, the waveguide or tube 5 is an evanescent body that attenuates around the resonance frequency of pin 9. This classification means that for the first and second types, we have 2h r <W and 2h r >W.

[0182] In the first type, when the resonance frequency f of pin 9B r falls within the frequency range where the waveguide 5B supports a single-propagation transverse electric (TE) mode, the inclusion 9B generates a stopband or a hybrid bandgap. In the second type, when the resonance frequency f of pin 9 r is lower than the cut-off frequency of the main waveguide 5, the inclusion 9 generates a passband FPB.

[0183] An exemplary model of the bandpass filter 3 of the present disclosure consists of a wire dielectric 9 in a main metal cavity or waveguide 5, as Figure 2A shown. The propagation characteristics of this transmission medium 5 are affected by the dispersion of the coupled resonator 9 and the main mode of the main medium 5. Therefore, the dispersion curve of the guided mode of the device 1 is shaped by the interaction of the polarization-like dispersion of the LRM9 and the capacitance of the main rectangular waveguide 5. In this way, it is shown that the bandwidth of the filter 3 directly depends on the size of the main medium 5, particularly the width W.

[0184] For a fixed width of the main waveguide, by increasing the distance between the pins (LR) (which means reducing the coupling coefficient), the bandwidth can be slightly reduced.

[0185] A larger waveguide 5 with a lower cut-off frequency results in a guided mode with a wider bandwidth. Subsequently, a narrower waveguide 5 results in a narrower bandwidth. The waveguide 5 and the wire 9 provide independent tuning of the bandwidth and the center frequency respectively.

[0186] To calculate the dispersion curve of this waveguide 5, it is assumed that the unit cell has periodic boundary conditions (PBC) on both the right and left sides of the unit cell and PEC on the other sides. The cut-off frequency f of the rectangular waveguide 5 c is determined by f c = c / 2×W, where W is the width of the waveguide 5, and the resonance frequency (f r ) of the wire depends on the length of the wire 9.

[0187] The inventors have demonstrated that according to the relative situation of f c and f r , the dispersion curve of the guided mode of the device will be shaped. For example, a chain 7 of wires 9 with a length of h = 4.4 mm (f c ~ 17 GHz) and a spacing of a = 2.5 m embedded in a rectangular metal waveguide 5 with W = a = 2.5 mm (f r = 59 GHz) will produce a narrowband transmission with a flat-shaped dispersion curve, as Figure 3(a). This is because the local resonance LR occurs at a frequency much lower than the cutoff frequency of the hollow waveguide 5 and is less affected by its main propagation mode. By increasing the width W of the rectangular waveguide 5 to W = 3a, its cutoff frequency decreases, as shown in Figure 3 As shown by the dotted line in (b), the cutoff frequency is close to 18.5 GHz.

[0188] The dispersion curve (represented by closed circles) of the guided modes in the LRM waveguide (LRW) with W = 3a covers a wider bandwidth compared to the LRW with W = a. Based on the information obtained from the dispersion characteristics of the guided modes, the inventors determined that due to the induced HBG, this subwavelength structure can function as a bandpass filter 3 with an adjustable bandwidth and a stopband (above f r ) in the stopband. The order of the system, which can be interpreted as the number of zeros in the stopband, is therefore determined by the number of lines 9.

[0189] Figure 1G The effect of the width W of the main waveguide 5 on the guided modes of the device 1 according to the present disclosure is also shown. Figure 1G The subwavelength guided mode SWGM shown before, Ref. Figures 1D to 1F The components of device 1 or pin-and-tube waveguide PPW are discussed.

[0190] Figures 1D to 1F A pin-tube waveguide PPW is shown as an artificial transmission line, consisting of a main waveguide 5, 5B, e.g. in the form of a hollow metal tube, loaded by a set of small local resonant inclusions arranged on a subwavelength scale along the propagation direction GD and realized, e.g. with resonant pins 9, 9B. Figure 1D and 1E A PPW is shown consisting of a single-mode hollow metal tube of height h and width W loaded by a set of local resonant inclusions 9, 9B arranged on a subwavelength scale and realized, for example, with pins 9, 9B. The pins 9, 9B have a height h r , the height is determined by the quarter-wavelength resonance condition f r =c / 4h r Estimated resonance frequency f r The cutoff frequency f of main tubes 5 and 5B is c is another main parameter, where f c =c / 2W. When i)f r >f c ( Figure 1D ) and ii)f r <f c ( Figure 1E), there are two different states or categories, where the main tube supports a single propagating TE mode, or supports only evanescent modes. In a non-limiting exemplary embodiment, the dimensions of the pins 9, 9B are set so that they resonate in the Ku band (10-18 GHz), which is widely used for satellite communications. From a manufacturing perspective, this choice allows the geometry to be compatible with standard manufacturing dimensions and precision, with RF / mechanical design advantages. The diameter of the pins 9, 9B is set to 2r = 1 mm, which is the minimum thickness that can be manufactured using the low-loss aluminum alloy AlSi10Mg by selective laser melting (SLM) according to current standards.

[0191] Figure 1D The first type shown in FIG. 5B involves a PPW comprising a propagation tube. The tube 5B comprises one or several resonant pins 9B which are at the resonant frequency f of the pins 9B. r The propagation mode is supported nearby, where the resonant frequency f r Greater than the cutoff frequency f of the main tube 5B c (f r >f c1 In an exemplary embodiment, by selecting the size h of the pin r =4.4mm, the resonant frequency of pin 9B is about 17GHz. r When falling into the single-mode band of the main waveguide 5B, it starts directly at f c Above (meaning W>2h r ), the unloaded waveguide is at f r The first transverse electric (TE) mode is supported around the pin 9B. Therefore, the presence of pin 9B creates a stop band in the transmission spectrum of the system. This is also evident by considering the band structure of the infinite periodic system, whose unit cell is in Figure 1H (left) shows that its characteristic is the bandgap HBG ( Figure 1H , right). Figure 1H The dotted line indicates the cutoff frequency. fc The dispersion curve of the unloaded tube 5B is shown in Figure 5, while the dashed line corresponds to the resonance of the local resonator. The band of the loaded tube 5B (solid black line) shows energy level repulsion, similar to the polaritons generated by the strong interaction of photons with the resonant state from which the HBG nucleates.

[0192] Therefore, by inserting a limited set of pins, such as a 5×1 or 2×6 array, as Figure 1I As shown in , a significant decrease in transmission can be obtained. Energy level repulsion occurs at frequency f o Just above this frequency, the frequency can be interpreted or designated as the resonant frequency of the unit cell of the PPW, and it is slightly lower than the resonant frequency f of the pin 9B alone. r By increasing the number of pins 9B, the characteristics of the bandgap can be modified. The size and position of the HBG are related to the resonant frequency f of the individual resonators.r , quality factor, and density, and is remarkably independent of periodicity. This feature makes HBGs unique and fundamentally different from Bragg-type band gaps (whose frequency scales with the lattice constant) because they occur in (usually) non-resonant periodic systems due to destructive interference between waves scattered from two different crystal planes.

[0193] The metamaterial ports or metamaterial connectors 19A, 19B described above are based on the first type of structure and will be described below in conjunction with the first type of structure. Figures 32 to 34 Provide a detailed description.

[0194] Figure 1E The second type shown in FIG relates to a PPW 1 comprising an evanescent main waveguide 5. One or several resonant pins 9 are included in the main waveguide 5 and have a resonant frequency f that is less than or lower than the cutoff frequency of the main waveguide 5. r (f r <f c2 ). When the width of the tube W2 is less than the height of the pin h r This is obtained when the value is twice as high as Figure 1F As shown in the figure, the unloaded tube does not support frequencies below the cutoff frequency f c In addition, the anti-phase response of the resonant pin 9 produces a large HBG, such as Figure 1F (middle). In the hollow waveguide or tube 5 (with a cutoff frequency f c ) includes a resonant frequency f r The pin 9 leads to a frequency below the resonance frequency f r The subwavelength guided mode SWGM, which Figure 1F The band diagram of the PPW is shown schematically in the right diagram. The width of the subwavelength guided mode SWGM is determined by the resonant frequency f of pin 9. r and the cutoff frequency f of the main hollow waveguide 5 providing a customizable bandwidth c The bandwidth can be customized by changing the width W2 of the tube or hollow waveguide 5. This feature can be seen in the band diagram of an infinite PPW or in the scattering parameters (S) of a pin-tube structure of finite size. 21 、S 11 ) was observed. Figure 1G (Left and right) show scenarios for making narrowband and broadband PPWs using small and large widths of W and W', respectively. Increasing the width of tube 5 from W to W', or equivalently increasing the cutoff frequency f c From f c Reduce to f c ′, extending the sub-wavelength guided mode SWGM to lower frequencies.

[0195] The bandwidth of the sub-wavelength guided mode SWGM can also be adjusted by changing the resonant frequency of the pin 9 , for example, by changing the height of the pin 9 .

[0196] To realize the exemplary bandpass filter 3, the inventors therefore assume a closed box comprising a LRW, for example, with two coaxial probes 19 ( Figure 4A ), whose position and size are optimized for best match. The main parameters optimized for best transmission are Figure 4B . The frequency selectivity of the filter 3 is improved by the number of wires 9, taking into account the actual wire diameter of 1 mm and the optimized value of the distance between the wires 9 of 2.5 mm. In order to have the best attenuation with minimum ripple in the passband, the number of wires (N), i.e. the degree of the filter, is chosen to be 6, for example. The dimensions of the probe 19, the air gap on top of the wire 9, the distance of the probe 19 from the LRW, and the distance of the probe 19 from the metal wall are optimized using CST optimization, and the values ​​are shown in Table 1 (these exemplary values ​​relate to a non-limiting example with a cut-off frequency of 15 GHz (the middle of the Ku band)). Taking into account the optimized parameters of the structure, the scattering coefficient (S 21 、S 11 ) spectrum in Figure 5 Shown in.

[0197] Table 1. Main parameter values ​​after optimization

[0198]

[0199] Based on the studies and results, the main parameter that interestingly influences the transmission spectrum is the width W of the waveguide 5 .

[0200] By reducing the width W of waveguide 5, the cutoff frequency of rectangular waveguide 5 is shifted to a lower frequency, thus widening the bandwidth of the guided mode of LRW3. This is very interesting because the bandwidth can be tuned without scaling the operating band.

[0201] The distance between the wall and the resonance line 9 is Figure 6 Shown as d y , which has a significant impact on the transmission spectrum. Figure 6 Shows different d y Value of S 21 Spectra, showing the tunability of the bandwidth mentioned earlier.

[0202] To achieve the best coaxial conversion, different types of probes 19 were investigated and the results showed that the highest match was obtained by using a ribbon probe 19 instead of a conventional wire probe 19. Figure 7 It can be seen in FIG5 that by considering the width of the strip w′=2 mm, the return loss has an optimal value.

[0203] The inventors designed and manufactured a filter 3 comprising a narrow tube with two pins 9 connected to a standard WR75 waveguide with a square flange, which serves as a 13 GHz Ku-band filter ( Figure 26 Among the different manufacturing technologies for this metal component, the laser melting (SLM) process was selected for the AlSi10Mg aluminum alloy due to its relatively high manufacturing speed and low weight potential. This aluminum metal 3D printing technology supports fine details as small as 0.5mm, a minimum wall thickness of 1mm, a dimensional tolerance of ±0.2mm, and matte and glossy finishes. Figure 26 26a and 26b show pictures of filters where the length of the main tube 5 is 2.5 mm (~λ / 10) for a 2% bandwidth, while the full size of the component is 9 mm and the weight is 7.4 g, considering the diameter of the pin 9 is 1 mm. Figure 26 C shows the device characterization results, which are in good agreement with the simulation results.

[0204] For higher order bandpass filters with steeper rolloff, PPWs with a greater number of pins 9 were fabricated to produce an exemplary wideband pass filter for the Ku band (12-18 GHz). Figure 4A Similar devices are Figure 27 The filter is shown in Figure a and consists of six pins 9 of 4 mm height, located inside a metal box with a waveguide width of 6 mm, with a parameter a = 2.5 mm (distance between pins). Due to manufacturing constraints, the component is manufactured in two parts: the box and the top plate connected by screws. The filter is then excited by extending the center line of the SMA connector inside the filter through the top plate. Since the tube used here (i.e. W = 6 mm) is larger than Figure 26 The two-pin filter (W = 2.5 mm) is wider, so the expected wider bandwidth is obtained, and due to the greater number of pins 9, a sharper attenuation is obtained. Figure 27 As shown in (b), a passband with a steeper rolloff between 13 and 16 GHz (solid black curve) was measured, with a fractional bandwidth of 14%. The fabricated PPW filter weighs 11 g and has an internal length of 17.5 mm, which is ~0.9λ at the center wavelength. This is much smaller and lighter than the length of conventional high-order metallic tube filters, which are typically multiple wavelengths long. The experimental results of the fabricated samples are in good agreement with the simulation results and support the theoretical studies. The RF parameters can be further improved by optimizing the position of the SMA and fabricating a fully enclosed box to reduce the dissipation caused by the air gap between the two parts of the system.

[0205] The inventors used full-wave simulation to study in detail the effect of increasing the width of the hollow waveguide 5 on the passband and suppression band. Figure 28As shown in Figure 5a, the frequency spectrum of this PPW filter consists of three main parts: (i) sub-λ mode (frequency passband FPB), (ii) suppression band, and (iii) parasitic passband generated by the main waveguide mode (the dotted line shows the cutoff behavior of the transmission spectrum through the unloaded metal tube). Although the unloaded main tube 5 supports its cutoff frequency f at 18 GHz, the c The propagation of the first TE mode above, but the suppression band of the filter or device 1 is not limited to 18 GHz, and the cut-off frequency f c The passband extends above 32 GHz (solid black line). This increased rejection band is caused by the stopband or HBG caused by the closed resonant pin 9 in the waveguide 5. Considering the fixed pin size, the main geometric parameter that plays a role in shaping the passband and rejection band is the hollow waveguide width W. By increasing the width W, the sub-λ passband is widened, as shown in Figure 28 As shown in b, the inhibition band is also affected.

[0206] The passband, suppression band and main mode band of the (6th order) PPW filter 1 are extracted for different values ​​of the waveguide width W (3-15 mm), where the pin height h r =4.4mm is fixed. Figure 29 The graph in Figure a demonstrates the main role of W in the design of PPW filter 1. Figure 29 b shows that by setting the upper cutoff frequency to 15 GHz in this exemplary embodiment, changing the waveguide W from 3 mm to 15 mm results in a bandwidth change from 3% to 75% at a fixed operating frequency, which is a significant advantage.

[0207] Another feature of PPW is its compatibility with different main waveguides or tubes (such as rectangular or circular metal tubes). PPW is also compatible with hollow tubes with arbitrary cross-sections, where the bandwidth of each PPW is determined by the cutoff frequency of the main tube. For example, Figure 30 As shown in a, the passband of a circular PPW with a diameter of 8.8 mm (twice the pin height) is equal to the passband of a rectangular CPPW with a width of 6 mm ( Figure 30 (c)).

[0208] The PPW also demonstrates robustness to distributed disorder in the pin positions. Because the response of the LRM depends strongly on the resonance of the inclusion 9 rather than its periodicity, small disorder or shifts in the position of the resonant pin 9 relative to the predicted or expected position, or small disorder or shifts in the resonant pin 9 from the predicted or expected position and relative to adjacent resonant pins 9, do not produce significant changes in the PPW transmission spectrum. Figure 30 (b) shows a PPW with pins 9 having random displacements in their lateral positions (dy) along the centerline of the waveguide 5, uniformly distributed between -1 mm and +1 mm. Figure 30As shown in (c), the transmission spectrum has the same passband as the faultless rectangular and circular PPWs. Devices with disorder (small variations in position) operate similarly to devices without disorder. This also applies when the resonant pins 9 are non-periodically sorted or randomly sorted.

[0209] As previously mentioned, the metamaterial ports or metamaterial connectors 19A, 19B can be used to transmit microwave or millimeter-wave signals into and out of the microwave or millimeter-wave passive device 1. The aforementioned metamaterial ports or metamaterial connectors 19, 19B are based on Figure 1D the aforementioned first type of category structure. Now, in conjunction with Figures 31 to 34 explain the advantages of using the metamaterial ports or metamaterial connectors 19A, 19B.

[0210] To be compatible with the standard waveguide system, the narrow PPW can be connected to the standard rectangular port. It is possible to consider connecting WR75 (width W2 = 19.05 mm) to the (6th order) PPW to construct a waveguide filter for the Ku-band downlink channel used in satellite communication ( Figure 31 a). To provide the required operating frequency and bandwidth between 10 - 13 GHz, the inventors considered h r = 5.15 mm, a = 2.8 mm, and W = 7.4 mm, resulting in a filter with a total length of only 11 mm (0.36λ, where λ = 30 mm). Since the mode distribution of the PPW waveguide is much narrower than that of the standard waveguide, the direct connection between the PPW and the WR75 port results in a low matching efficiency, as shown in Figure 31 the S of 11 and the S 21 spectra. To improve the wave conversion, the inventors used the aforementioned first type of PPW ( Figure 1D ) to construct the metamaterial ports 19A, 19B, where, for example, WR75 is used as the propagation main medium 5B.

[0211] To understand how the conversion structure is designed, assume that a single pin 9B is inserted into the WR75 waveguide, with a height of h p , where 2h p < W2, and assume that its size is slightly smaller than the size of the pin in the filter (h p < h r ). This pin 9B resonates in the propagation medium 5B, introducing a zero point near its resonant frequency f p . Figure 32 The structure shown in p a is used as a notch filter, and the drop point in the transmission spectrum can be adjusted by adjusting the height h

[0212] Figure 32b shows the transmission spectrum of the hollow waveguide 5B defined by the WR75 structure, wherein the WR75 structure is composed of p The resonant pin 9B is loaded with a value of . In the metamaterial ports 19A, 19B, the size of the pin is adjusted so that the wave passes in the passband of the PPW filter 1 and induces a zero point in its suppression band. The height h is selected p = 3.5mm to make the suppression band around 17GHz. In addition, a 2×2 array of pins 9B is included to achieve a passband mode distribution that matches the field distribution of the PPW filter, such as Figure 33 The total size of the structure including the metamaterial ports 19A and 19B is only 24 mm (0.8λ). Figure 33 As shown in b.

[0213] The simulation and experimental measurement results of different samples are Figure 34 a to 34c. Filter 3 uses Figure 27 The coaxial filter is manufactured by the same SLM aluminum metal 3D printing, and the first device is manufactured in Figure 34 To reduce the insertion loss, a second silver-plated filter is fabricated, as shown in the right side of a. Figure 34 As shown on the left side of a.

[0214] like Figure 34 As shown in FIG. 2 , the Ku-band waveguide filter with subwavelength metamaterial ports 19A and 19B has a return loss of less than -15 dB in the passband, while it has a high rejection level and sharp attenuation at 13.2 GHz. In addition, silver plating can be used to reduce the insertion loss to less than 1 dB, as shown in FIG. Figure 34 The RF specifications of this PPW filter with a total length of 24 mm (0.8λ) show that the PPW is a high-performance waveguide filter with high power handling, but is at least an order of magnitude smaller than conventional waveguide filters in this frequency range, which is a significant advantage.

[0215] As previously mentioned, the metamaterial ports or metamaterial connectors 19A, 19B may be used to transmit microwave or millimeter wave signals into and out of the microwave or millimeter wave passive device 1 .

[0216] According to another aspect of the present disclosure, the present disclosure relates to a method based on the aforementioned Figure 1D The first type of device or component 100, 200, 300 is constructed. Such microwave or millimeter wave passive devices or components 100, 200, 300 include the metamaterial ports or metamaterial connectors 19A, 19B described above; and ports or couplers configured to ensure efficient matching between waveguide components or increase the suppression level and / or widen the suppression band. Also included are the devices based on the aforementioned Figure 1D The first type of notch filter 200 and band-stop filter 300 . Figure 24 and 25 Exemplary notch filter 200 and band-stop filter 300 are shown, respectively.

[0217] The microwave or millimeter wave passive device 100, 200, 300 includes at least one hollow waveguide 5B configured to support a transverse electric (TE) mode of microwave or millimeter wave electromagnetic radiation. The at least one hollow waveguide 5B includes a first wall structure 11B and a second wall structure 15B, an interconnecting base or wall 17B extending between the first and second wall structures 11B, 15B, and an enclosure or ceiling (EWSB) extending between the first and second wall structures 11B, 15B. The enclosure (EWSB) is positioned opposite the interconnecting base 17B. The enclosure (EWSB) and the interconnecting base 17B physically contact the first and second wall structures 11B, 15B to define a main cavity within which a group or plurality of coupled resonant structures 9B are located.

[0218] For example, the first wall structure 11B, the second wall structure 15B, the interconnected base 17B, and the enclosure or ceiling EWSB can define a continuous enclosure or enclosure, or a completely closed enclosure or enclosure that encloses or surrounds the plurality of resonant structures 9B. The continuous enclosure or enclosure or the completely closed enclosure or enclosure defines an interior cavity or chamber in which the plurality of resonant structures 9B are located. For example, the first wall structure 11B, the second wall structure 15B, the interconnected base 17B, and the enclosure or ceiling EWSB can define a completely laterally closed body.

[0219] For example, a continuous or fully closed enclosure may define at least a first opening and / or at least a second opening, for example configured to receive (or be attached to) the hollow waveguide 5A and the waveguide flange FL, or to receive first and second waveguide flanges FL, respectively.

[0220] A plurality of coupled resonant structures 9B are enclosed within at least one hollow waveguide 5B. The plurality of coupled resonant structures 9B are configured to provide coupled local resonators LR and at least one frequency stopband FSB or hybrid bandgap HBG.

[0221] A plurality of coupled resonant structures 9B are located between the first and second wall structures 11B, 15B, and each resonant structure 9B extends from the interconnect base 17B into at least one hollow microwave waveguide 5B to define a subwavelength resonant structure, with consecutive resonant structures 10B separated by a subwavelength distance.

[0222] The resonant frequency f of the resonant structure 9B r Higher than or greater than the cutoff frequency fc of the at least one hollow waveguide 5B and within a frequency range in which the at least one hollow waveguide 5B supports a transverse electric TE mode (eg, a single transverse electric TE mode) of microwave or millimeter electromagnetic radiation.

[0223] The width W of the at least one hollow waveguide 5B is greater than the height h of the or each resonant structure 9B. r The coupled local resonant structures 9B may be arranged or grouped in a periodic or aperiodic pattern, or randomly arranged inside the at least one hollow waveguide 5B.

[0224] The height h of the resonant structure 9B r The distance from the resonant structure 9B defines a frequency or frequency range within which at least one selected microwave or millimeter wave signal is allowed to enter or be transmitted from the microwave or millimeter wave passive component 100 , 200 , 300 .

[0225] The device 100, 200, 300 may include a connection device configured to connect the microwave or millimeter wave passive device 100, 200, 300 to another device. The connection device may include or consist of a waveguide flange FL. For example, the waveguide flange FL may include a drilled hole for attaching to another device or object by screws or bolts and nuts. The notch filter 200 and the band-stop filter 300 ( Figure 24 and 25 ) includes connecting devices at both ends, such as two flanges FL.

[0226] Band-stop filter 300( Figure 25 ) includes a first hollow waveguide 5B1 and a second hollow waveguide 5B2 connected together and having different waveguide widths. The arrangement of the resonant structures 9B1, 9B2 may also be different in each of the first and second hollow waveguides 5B1, 5B2.

[0227] Further details of the microwave or millimeter wave passive devices or components 100, 200, 300 have been previously described with respect to the previously described metamaterial ports or metamaterial connectors 19A, 19B and the previously mentioned Figure 1D The first category is described in .

[0228] As previously mentioned, the arrangement pattern of the resonant structures 9B, their number as well as their height and diameter are set so as to define a predetermined filtering profile for the device 19, 100, 200, 300 and / or devices to which they are to be connected having regard to the desired characteristics.

[0229] Based on the filtering technology of microwave or millimeter wave passive devices or components disclosed above, different types of duplexers, such as T-junction or Y-junction, can be designed using, for example, metal walls or bandgap materials.

[0230] Figure 10 1 to 12 show different exemplary duplexers 27 , 41 .

[0231] Figure 10A microwave passive component or device 1 is shown as an exemplary Y-junction duplexer 27. In the microwave passive component 1 or duplexer 27, the microwave waveguide 5 includes first and second walls 11, 15, and a third wall structure 29 extending in a guiding direction GD. For example, an interconnecting wall structure 17 extends between the first wall structure 11, the second wall structure 12, and the third wall structure 13. To illustrate other elements of the duplexer, the enclosure or ceiling EWS is not shown.

[0232] exist Figure 10 In the exemplary duplexer 27 of FIG. 5 , the array 7 comprises or consists of a first sub-array 31 of resonant structures 9, a second sub-array 33 of resonant structures 9 and a third sub-array 35 of resonant structures 9 extending inside the hollow waveguide 5. The extension of the sub-arrays in the device 27 is shown by dotted lines. Figure 10 In the exemplary example of , the first sub-array 31 extends in the guiding direction GD before being split or divided to form the second and third sub-arrays 33 , 35 .

[0233] The first sub-array 31 is at least partially located between the first and second wall structures 11, 15. The second sub-array 33 is located between the first and third wall structures 11, 29, and the third sub-array 35 is located between the second and third wall structures 15,29.

[0234] The distance or spacing ds1 between the first and second wall structures 11, 15 is greater than the distance or spacing ds2 between the first and third wall structures 11 and 29 and / or the distance or spacing ds3 between the second and third wall structures 15, 29. The distance or spacing ds2 can be (substantially) the same as or different from the distance or spacing ds3. Thus, the bandwidth of the first subarray 31 of the resonant structure 9 is different from the bandwidth of the second subarray 33 and the third subarray 35 of the resonant structure 9. The bandwidth of the second subarray 33 and the third subarray 35 of the resonant structure 9 can be (substantially) the same as or different.

[0235] The first sub-array 31, the second sub-array 33 and the third sub-array 35 of the resonant structure 9 are each configured to define different local resonator LR resonant frequencies f having different cut-off frequencies or attenuation frequencies. r For example, by defining different heights h1, h2, and h3 for the resonant structure 9 of each sub-array, each sub-array defines a different resonant frequency f r To define the resonant frequency f of each sub-array local resonator r The second sub-array 33 and the third sub-array 35 of the resonant structure 9 define two narrowband channels relative to the broadband channel defined by the first sub-array 31 of the resonant structure 9 .

[0236] In view of the different resonant frequencies f of the resonant structures 9 (resonant structures 9 of different heights) of the second and third sub-arrays 33 and 35,r Defined frequency passbands through which two narrowband channels can transmit or pass signals of different frequencies.

[0237] The first, second, and third sub-arrays 31, 33, 35 define first, second, and third ports or channels of the duplexer 27. The first port may be, for example, an input port or channel, and the second and third ports may be, for example, output ports or channels. Alternatively, the first port may be, for example, an output port or channel, and the second and third ports may be, for example, an input port or channel.

[0238] The first, second and third wall structures 11, 15, 29 comprise or consist of continuous or planar metal walls defining non-planar or planar surfaces, e.g. Figure 10 As shown in and described above with respect to filter device 3.

[0239] The duplexer 27 may include first, second, and third terminals or probes 19, such as those previously mentioned. The first and second sub-arrays 31, 33 are at least partially located between the first 19A and second 19B terminals or probes. The first and third sub-arrays 31, 35 are located between the first 19A and third 19C terminals or probes.

[0240] Different from Figure 10 The coaxial ports 19A, 19B, 19C shown in FIG2 may be used instead of or in place of the previously described metamaterial ports or connectors. In this case, the metamaterial ports are connected and coupled through openings in the sidewalls LW of the duplexer 27.

[0241] It should be noted that, optionally, the duplexer 27 comprising the wall structures 11 , 15 , 29 may also comprise a resonant metamaterial comprised between the wall structures 11 , 15 , 29 and the array 7 .

[0242] Therefore, the inventors designed an exemplary Y-junction duplexer 27 using previously designed or published narrowband and broadband filters. Figure 10 In the Y-junction, a wideband filter is created, for example as an input port, by using metal walls 11, 15 at a relatively large distance from the resonator. Two narrowband channels with different resonant frequencies or frequency passbands are separated from the Y-junction, for example to the output port.

[0243] The present disclosure also relates to another exemplary microwave passive component 1 , namely a T-junction duplexer 41 . Figure 11 and 12A An exemplary T-junction duplexer 41 is shown.

[0244] In the microwave passive component 1 or duplexer 41, the hollow waveguide 5 includes first and second walls 11, 15 and third 43, fourth 45 and fifth 47 wall structures. For example, the interconnecting wall structure 17 extends between the first wall structure 11, the second wall structure 15, the third wall structure 43, the fourth wall structure 45 and the fifth wall structure 47. In order to illustrate other elements of the duplexer 41, the surrounding walls or ceiling EWS are not shown.

[0245] The array 7 comprises or consists of a first sub-array 51 of resonant structures 9 , a second sub-array 53 of resonant structures 9 and a third sub-array 55 of resonant structures 9 extending inside the microwave waveguide 5 .

[0246] The first sub-array 51 is located between the first wall structure 11 and the second wall structure 15. The second sub-array 53 is located between the third wall structure 43 and the fifth wall structure 47. The third sub-array 55 is located between the fourth wall structure 45 and the fifth wall structure 55.

[0247] The second and third sub-arrays 53, 55 extend inside the waveguide 5 (substantially) perpendicular to the first sub-array 51. The second and third sub-arrays 53, 55 extend inside the waveguide 5 parallel to each other and in an aligned or linear manner with respect to each other.

[0248] The spacing or width W1 between the first and second wall structures 11 , 15 is greater than the spacing or width W2 between the third wall structure 43 and the fifth wall structure 47 and / or the fourth wall structure 45 and the fifth wall structure 55 .

[0249] The first sub-array 51, the second sub-array 53 and the third sub-array 55 of the resonant structure 9 are configured to define different resonant frequencies f having different cut-off frequencies or attenuation frequencies. r As mentioned above, for example, by defining different heights h of the resonant structures 9 in each sub-array, each sub-array defines a different resonant frequency f. r To define the resonant frequency f of the local resonator of each sub-array r .

[0250] A broadband filter is created as a first port, and two narrowband channels having different resonance frequencies are provided as second and third ports.The first sub-array 51, the second sub-array 53, and the third sub-array 55 define a first port, a second port, and a third port.

[0251] The first port is, for example, an input port or channel, and the second and third ports are, for example, output ports or channels. Alternatively, the second and third ports are, for example, input ports or channels, and the first port is, for example, an output port or channel.

[0252] The first 11, second 15, third 43, fourth 45 and fifth 47 wall structures include or consist of continuous or planar metal walls, such as Figure 12A As shown in .

[0253] The T-junction duplexer 41 may also include a first 19A, a second 19B, and a third 19C terminal or probe. The first sub-array 51 and the second sub-array 53 are located between the first 19A and the second 19B terminal or probe, and the first sub-array 52 and the third sub-array 55 are located between the first 19A and the third 19C terminal or probe. Similar to the Y-junction, several types of T-junctions and manifold models can be designed based on the technology developed by the inventors. As an example, the structure of the T-junction duplexer based on the LRW design is Figure 12A , whose bandwidth is adjusted by the width of the waveguide. In this structure, a large value of W1 results in a broadband filter that supports a wide frequency range, consisting of the uplink and downlink channels 53, 55. On the other hand, a small value of W2 results in two narrowband filters whose frequency range or frequency passband is determined by the length of the wire 9 in these two channels 53, 55. After some initial optimization of some geometric parameters such as D (the width of the aperture between the wall structures 43, 45), the S of this structure is 11 、S 21 、S 31 Spectrum in Figure 12B Shown in.

[0254] Figure 11 Shows something like Figure 12A An alternative T-junction duplexer 41, but including metamaterial ports 19A, 19B, 19C or connectors as previously described, rather than Figure 12A The coaxial ports 19A, 19B, 19C are shown in FIG.

[0255] The duplexer can be implemented on the same basis as the above-mentioned duplexer 41 .

[0256] Based on the physical properties of LRW, a chain 7 of resonant wires 9 embedded in a narrow channel can be used as a narrowband filter, as a basic element for realizing duplexers and multiplexers. Since the propagating waves in this filter are localized around the wires 9, strong isolation between channels can be obtained even for adjacent waveguides. r The resonant channels can form a multiplexer.

[0257] Figures 13A to 13D as well as Figure 15A and 15B An exemplary multiplexer or splitter is shown 59. The same general device structure is used for multiplexers and splitters, with more input channels than output channels in the case of multiplexers and more output channels than input channels in the case of splitters.

[0258] For example, Figure 13A As can be seen in FIG, the multiplexer 59 or microwave waveguide 5 comprises a plurality of wall structures 61 (61A, 61B, 61C, 61D, 61E, 61F, 61G, 61H, 61I, 61J, 61K, 61L). For example, the interconnecting wall structure 17 may extend between the plurality of wall structures. To illustrate other elements, Figure 13A No surrounding walls or ceiling EWS are shown.

[0259] A plurality of arrays 7A, 7B, 7C, 7D, 7E, 7F of resonant structures 9 extend inside the microwave waveguide 5. Each array 7A, 7B, 7C, 7D, 7E, 7F is located between two wall structures 61A, 61B, 61C, 61D, 61E, 61F, 61G, 61H, 61I, 61J, 61K, 61L. For example, the array 7A is surrounded by a first wall structure 61B and a second wall structure 61C.

[0260] Each array 7A, 7B, 7C, 7D, 7E, 7F of the resonant structure 9 is configured to define a different resonant frequency f0 and / or a frequency passband FPB having a different cutoff frequency or attenuation frequency. As previously described, for example, a different resonant frequency f0 can be defined for each array by defining a different height h for the resonant structure 9 of each array. r To define the resonant frequency f of each local resonator in the array r .

[0261] Figure 13A An exemplary, non-limiting embodiment is shown comprising six arrays of resonant structures 9. However, there may be more than six channels or less than six channels (there may be at least three). Figure 13A The diameters of the devices 59 shown in FIG. 5 are non-limiting exemplary diameters used to indicate the small size of these devices.

[0262] For example, each array 7A, 7B, 7C, 7D, 7E, 7F of the resonant structure 9 defines an input port or channel. The input ports or channels share a central or output port CP. Alternatively, in the case where the multiplexer is used as a splitter, each array 7A, 7B, 7C, 7D, 7E, 7F defines an output port or channel, and the central port CP is the input port.

[0263] For example, the wall structures 61A, 61B, 61C, 61D, 61E, 61F, 61G, 61H, 61I, 61J, 61K, 61L include or consist of continuous or planar metal walls defining non-planar or planar surfaces, such as Figure 13A As shown in .

[0264] Multiplexer 59 includes a plurality of terminals or probes 19. Each array 7A, 7B, 7C, 7D, 7E, 7F is positioned between a first and a second terminal or probe 19. For example, first array 7A is positioned between first terminal 19A and second terminal 19SH, and second array 7B is positioned between second terminal 19B and second terminal 19SH. Each array has or shares a common terminal or probe 19SH. For example, terminals 19 are provided via interconnecting wall structure 17 and / or surrounding wall or ceiling EWS.

[0265] Figure 13A and 13B The multiplexer 59 includes additional outer side walls LW that surround the resonant metamaterial and the array 7 and other elements described above. The side walls define an exemplary and non-limiting circular shape, but other shapes are possible.

[0266] Figure 13A and 13B The multiplexer 59 defines a non-limiting and exemplary overall cylindrical shape having a circular cross-section. However, other shapes and cross-sections are possible.

[0267] The wall structure comprises or consists of a continuous or planar metal wall (see, for example, Figure 13A ). Metal plates or planes can thus be used to realize the walls, e.g. Figure 13A As shown in .

[0268] The exemplary structure of the disclosed multiplexer / demultiplexer (MUX / DeMUX) consists of a coaxial port in the center of a closed metal cylinder and six coaxial ports separated by 60° angles at the ends of the channels ( Figure 13A ). In order to realize a bandpass filter in each channel, walls are included, for example, on both sides of the pin 9, while the distance of the walls from the pin 9 determines the bandwidth of each channel.

[0269] A metal wall, optionally at an adjustable distance from the resonant pin 9, may be used (see, for example, Figure 13A ).exist Figure 13E The figure shows the relative input (S k1 ) and is used for the middle port 19SH Figure 13A Transmission spectra of the six coaxial devices 1.

[0270] Therefore, in Figure 13B Several resonant channels 7A, 7B, 7C, 7D, 7E, 7F with different resonant frequencies (size of wire 9) in the compact structure shown are disclosed herein as a six-channel multiplexer 59. Since the band gap of the artificial material is caused by the resonant frequency of the wire 9 rather than the periodicity, it is robust to disorder in the position of the wire 9 and can even be achieved with randomly positioned wires.

[0271] Figure 13F Shown with Figure 13A A similar alternative embodiment of the multiplexer 59, but in which the wall structures 61A, 61B, 61C, 61D, 61E, 61F comprise or consist of a resonant metamaterial (artificial wall). The resonant metamaterial may thus comprise or consist of a plurality or a group of elongated conductive bodies 25 defining microwave subwavelength elongated conductive bodies. The resonant metamaterial of the wall structures 61A, 61B, 61C, 61D, 61E, 61F is (completely) surrounded by an outer sidewall LW, which also surrounds the plurality of arrays 7. The sidewall LW defines an exemplary and non-limiting circular shape, but other shapes are possible. Figure 13A similar, Figure 13F The multiplexer 59 is shown without the upper package (e.g. Figure 13B and 13C shown in ).

[0272] The elongated electrical conductors 25 extend in the same direction as the resonant structure 9. The exemplary wall structures 61A, 61B, 61C, 61D, 61E, 61F include or consist of a population of elongated electrical conductors 25 grouped between the two arrays 7. For example, the elongated electrical conductors 25 may be positioned randomly or orderly in the groups or clusters.

[0273] The frequency difference of the channels defined by each array 7 is another major important parameter. The height of the pins 9 controls or defines the frequency difference. An important influence on the channel output spectrum is the height difference (δh) of the pins in different channels or arrays 7 and can be used to determine the frequency difference of the passband of each array or channel 7.

[0274] For example, by setting the height of pin 9 in the first channel 7 to h1, k = h1 + k.δh (k = 1, ..., 5) to obtain the heights of the other channels 7, where δh is the height difference. The smaller δh is, the lower the frequency difference of the six channels provided. Figure 14 14A and 14B show the output of channel 7 with two values ​​of δh=0.3 mm and δh=0.5 mm.

[0275] By setting different pin heights (or resonant frequencies f for each array 7 r ) determines the channel defined by each array 7. The bandwidth of each channel of each array 7 can be adjusted by the distance between the wall and the pin 9.

[0276] Figure 15A and 15BAn exemplary multiplexer / splitter is disclosed, which is an exemplary four-port multiplexer including one input metamaterial port 19A and three output metamaterial ports 19B, 19C, and 19D, thereby forming an exemplary triplexer functioning as a splitter. Array 7A defines input channels, and arrays 7B, 7C, and 7D define output channels. In cases where there are more input channels than output channels, the device functions as a multiplexer. Both multiplexers and splitters utilize the same general device structure.

[0277] FIG15 shows a schematic cross-sectional view of an alternative multiplexer / splitter 59 that includes the previously described metamaterial ports 19A, 19B, 19C or connectors instead of the previously described metamaterial ports 19A, 19B, 19C or connectors. Figure 12A , coaxial ports 19A, 19B, and 19C are shown. A resonant junction RJ couples electromagnetic waves into different channels 7A, 7B, 7C, and 7D. The resonant junction RJ can be formed in an ultra-small volume. For example, the resonant junction RJ can be formed by inserting one or a small number of resonant elements or pins 9. The resonant elements or pins are configured to match the input and output channels, that is, to ensure that the input signal and the output channel match at a specific frequency and transmit the signal therebetween with minimal loss or reflection.

[0278] Although duplexer and multiplexer / splitter devices have been described above, other microwave or millimeter wave devices may be provided by the filtering principles of the present disclosure. Figures 17 to 23 illustrate other such exemplary devices or components.

[0279] Figure 17A and 17B A device 401 is shown that includes or consists of an integral antenna feed and a bandpass filter. The bandpass filter includes a first metamaterial port or connector 19A for connecting to another waveguide. The bandpass filter includes a second metamaterial port or connector 19B connected to an antenna 403. The function of the bandpass filter is similar to Figure 9A The same bandpass filter.

[0280] Figure 18A and 18B A device 501 is shown that includes or consists of an integral antenna feeder and a duplexer. The device 501 has Figure 11 The structure is similar to the duplexer of FIG, but includes a metamaterial port or connector 19C connected to the antenna 503. The filter is configured to pass signals of different frequencies in channels CH1, CH2 between the metamaterial port and connector and the antenna.

[0281] Figure 19 An exemplary power splitter 601 is shown, which is a compact, reflection-free power splitter.

[0282] Figure 20 An orthomode transducer (OMT) including a metamaterial port is shown.

[0283] Figure 21A and 21B A dual-band filter comprising metamaterial ports 19A, 19B is shown.

[0284] Figure 22A and 22B Shown is a compact H-bend filter 901. The compact reflectionless H-bend filter is based on a PPW filter structure and uses metamaterial ports 19A, 19B to input and output microwave or millimeter wave signals.

[0285] As mentioned above, the hollow waveguide 5 of the PPW can have a circular cross section or any other cross-sectional shape. The hollow waveguide 5 also allows the realization of small structures with twists, bends, branches or sharp bends. Figures 23A to 23D As shown in , a PPW with arbitrary cross-section can be constructed from a straight tube, a twisted tube, a bend, or one or more branches. Figure 23A A waveguide 5 is shown having an arbitrary cross-sectional shape. Figure 23B A twisted waveguide 5 is shown, and the array of resonant structures 9 is gradually tilted along the guiding direction of the waveguide 5 . Figure 23C A waveguide 5 is shown having a sharp bend. Figure 23D An exemplary microwave component or device including a resonant junction RJ and a plurality of branches BH is shown.

[0286] Type II pin-tube waveguide ( Figure 1E ) can be used to implement many different devices and achieve narrow or wide passbands in different passive components with customizable operating frequencies and bandwidths. It can enable ultra-small waveguides, bandpass filters, lowpass filters, dual-band and multi-band filters, tunable / reconfigurable filters, duplexers, multiplexers, integral antenna feeds, power dividers, devices with compact bends, polarizers, and orthomode transducers.

[0287] Using the PPW technology of the present disclosure, a variety of microwave or millimeter wave devices can be realized, such as bandpass filters (BPFs) with coaxial ports, BPFs with standard waveguide ports, low-pass filters (LPFs) with coaxial or standard waveguide ports, antenna feeds with PPW BP filters, multiplexers with coaxial and standard waveguide ports, duplexers with standard ports, integrated horn antennas, duplexers with coaxial ports, waveguide E-bends and H-bends, dual-band filters, power dividers, cylindrical PPWs, orthogonal mode transducers (OMTs), polarizers, low-pass filters, notch filters, and band-stop filters. Some of these devices are depicted in the figures.

[0288] It should be noted that the sizes or dimensions of the microwave components or devices 1 disclosed herein are exemplary sizes. Smaller microwave components or devices 1 footprints may be provided.

[0289] By scaling down all of these components, their size can be reduced. This can be achieved, for example, by using more advanced 3D printing techniques and / or by including smaller SMA ports.

[0290] In all types of disclosed waveguide components 1 , while the height of the device 1 is determined by, for example, a quarter of the operating wavelength, the length and width of the proposed component 1 are dictated by the diameter and the periodicity of the metal rods 9 .

[0291] Since the wave manipulation mechanism is related to periodicity (see, for example, Figure 35 ) and the diameter of pins 9, these resonant crystals or elements can be made smaller if the manufacturing process allows. Based on the minimum exemplary thickness of 1 mm (diameter of pins 9) of the 3D metal printing service typically used for the exemplary device 1 studied, an exemplary diameter of 1 mm and an exemplary period of 2.5 mm were implemented. Higher resolution is possible, and the inventors recently produced devices including pins 9 with a diameter of 0.5 mm. Improved additive manufacturing processes and the realization of smaller thicknesses and diameters will ensure that the distance between pins 9 is smaller, thereby allowing for a smaller footprint.

[0292] Furthermore, in some designed and manufactured devices 1, the overall size of the component is also limited by the size of the coaxial SMA available on the market, which requires sufficient space to connect to the component. Therefore, by using a smaller SMA, the overall size of the component 1 can be reduced.

[0293] As previously mentioned, the terminal or port 19 of the microwave component or device 1 of the present disclosure may include or be composed of a waveguide (e.g., a rectangular waveguide). For example, the type of port may be achieved by coaxial or waveguide conversion. Although the inventors have found that the best matching of the coaxial conversion can be achieved by adjusting the size and position of the coaxial port, the inventors have also considered some different types of waveguide conversion to obtain improved matching efficiency.

[0294] The inventors propose two exemplary schemes or methods to connect the small closed metal box of the miniaturized filter 3 to a conventional waveguide. Figure 16 The first method shown in Figures 16A and 16B is obtained by connecting waveguides (e.g., rectangular) of the same size as a conventional waveguide (e.g., WR75 for Ku band) on both sides of the locally resonant metamaterial waveguide (LRMW) filter 3.

[0295] For example, the minimum length (δL) of the two sections on either side can be around 2.5 mm. Furthermore, to achieve improved return loss, the array of resonant pins 9 can be extended into two larger waveguides (WR75). This technique enhances mode coupling and improves matching efficiency.

[0296] The second method uses a (ring) wire in a rectangular waveguide (WR75) and, for example, a coaxial probe ( Figure 16 C and 16D) couple electromagnetic energy from the slot or opening (e.g. on the top) to the LRMW filter 3.

[0297] For example, for the proposed MUX / DeMUX 59, these types of conversions can be similarly applied to other devices 1. Although the coupling from the slots on the top of the structure ( Figure 16 C) will be used for intermediate ports, but the first conversion method ( Figure 16 A) can be applied to the other six ports.

[0298] The microwave passive component or device 1 disclosed herein provides at least the following advantages:

[0299] Compared to all types of waveguide filters proposed in the prior art and the one designed by the inventors at LWE, the compactness of this structure is a major advantage. For example, the narrowband waveguide filter in the Ku band has a length of approximately 2 cm. Considering sufficient space for connecting to a commonly used coaxial port, the entire filter 3 can be implemented with a length of 3.3 cm. The volume of the duplexer 27 and the multiplexer 59 is also designed to be much smaller than conventional components commonly used in satellite systems. Figure 13A As can be seen in the figure, the entire six-port multiplexer is designed in a box with a side of 4.8 cm. The metal cylinder with a depth of 1.5 mm is shown. Figure 12A An example of a designed duplexer 27 for separating two channels at 13 and 14 GHz is depicted in , which similarly has a very small width W1 of approximately 3.7 cm.

[0300] The simple, customizable design framework of this new technology is another important aspect of this disclosure. The resonant frequency, i.e., the filter's cutoff frequency (stopband), is simply determined by the length of the pin / line 9. Furthermore, the bandwidth of the filter 3 is directly dependent on the width of the rectangular box 5 that serves as the wall surrounding the resonant line 9. This simplicity ensures a customizable bandpass filter. One can easily design a filter for any desired frequency range, bandwidth, and RF interconnect (customizability).

[0301] Bandwidth tuning in microwave filters3 using movable walls is a promising new technology that could improve the field of reconfigurable filters, interestingly based on waveguide technology. The bandwidth can be tuned independently of the operating frequency. This tunability can be achieved manually or electrically.

[0302] The lower intrinsic loss of the disclosed microwave components is another feature that distinguishes the device and method from conventional metamaterial filters 3 in the prior art. Known small narrowband metamaterial filters based on split ring resonators (SRRs) on microstrip lines or substrate integrated waveguides (SIWs) are generally very sensitive to dielectric losses, which limits their application in high-power satellite communications or radar systems. For example, by using low-loss aluminum alloys, small-scale fabricated filters show quite low insertion loss, which can be further reduced by silver plating. High-order bandpass filters can be achieved, not by cascading bulky cavities at the expense of size, as in conventional filters, but simply by increasing the number of pins / wires without insensitivity to their periodicity, diameter or position. By increasing the number of wires, improved frequency selectivity and steep attenuation can be obtained. A 1D chain of 6 quarter-wavelength wires with a total length of 2 cm provides acceptable frequency selection.

[0303] The high level of suppression in the stopband achieved by the hybrid bandgap of the resonant metamaterial 9 is another feature of the proposed scheme. In addition to bandpass filters, the method proposed in this disclosure can be used to design improved compact and customizable bandstop filters and multi-bandstop filters based on the effect of HBG.

[0304] Due to the improved suppression in the filter's stop band, which originates from the hybrid band gap, high isolation levels in duplexers and multiplexers can be achieved with great promise.

[0305] Low crosstalk between adjacent channels of the multiplexer caused by the small mode volume of propagating waves around the wires is another consequence of using locally resonant metamaterials.

[0306] The additive manufacturing techniques used to fabricate the device 1

[55] , such as selective laser melting of lightweight and low-loss materials (AlSi10Mg), promise low-cost fabrication of any complex and miniaturized structure. Here, the fabrication method overcomes the traditional limitations of fabricating electrically resonant inclusions at microwave frequencies.

[0307] Although the present invention has been disclosed with reference to certain preferred embodiments, many modifications, variations, and alterations to the described embodiments and their equivalents are possible without departing from the breadth and scope of the invention. Therefore, it is intended that the present invention not be limited to the described embodiments and that the language of the appended claims be given the broadest reasonable interpretation. Features of any one of the above-described embodiments may be included in any other embodiment described herein.

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[0370] Each of the above references is incorporated herein by reference in its entirety.

Claims

1. A microwave or millimeter wave passive device (1), comprising: - a hollow waveguide (5), comprising a first wall structure (11) and a second wall structure (15) extending along a guiding direction (GD), an interconnection base (17) extending between the first and second wall structures (11, 15), and an enclosure (EWS) extending between the first and second wall structures (11, 15), the enclosure (EWS) being positioned opposite the interconnection base (16); as well as - at least one array (7) of radiatively coupled or directly electromagnetically coupled resonant structures (9) enclosed inside the hollow waveguide (5), the at least one array (7) of radiatively coupled resonant structures (9) being configured to provide radiatively coupled or directly electromagnetically coupled local resonators (LR) and at least one microwave or millimeter wave frequency passband (FPB) for providing at least one selected microwave or millimeter wave signal, the array (7) extending along the guiding direction (GD) and being located between the first and second wall structures (11, 15), wherein each resonant structure (9) extends from the interconnecting base (17) into the hollow waveguide (5) to define a microwave or millimeter wave subwavelength resonant structure, and wherein consecutive resonant structures (9) are separated by a microwave or millimeter wave subwavelength distance, The resonant frequency (f r ) is lower than or less than the cutoff frequency (f c ), The microwave or millimeter wave passive device (1) comprises a first metamaterial port or connector, the first metamaterial port or connector comprises a plurality of radiation coupling or direct electromagnetic coupling resonant structures, the plurality of radiation coupling or direct electromagnetic coupling resonant structures are configured to couple or transmit electromagnetic waves into the microwave or millimeter wave passive device (1), The resonance frequency (f r ) is lower than the resonant frequency of the resonant structure of the plurality of radiatively coupled or directly electromagnetically coupled resonant structures of the first metamaterial port.

2. The microwave or millimeter wave passive device (1) according to claim 1, wherein: The hollow waveguide (5) supports at least one evanescent mode or wave of microwave or millimeter electromagnetic radiation.

3. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The hollow waveguide (5) is configured to support at least one or more evanescent modes or waves of microwave or millimeter electromagnetic radiation, and the at least one or more evanescent modes or waves couple or interact with the local resonators (LR) of the resonant structure (9) to provide subwavelength guided modes in the microwave or millimeter wave passive device (1), thereby defining the at least one microwave or millimeter wave frequency passband (FPB) of the microwave or millimeter wave passive device (1).

4. The microwave or millimeter wave passive device (1) according to claim 3, wherein: The sub-wavelength guided mode is lower than or less than the resonant frequency (f r ).

5. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The hollow waveguide (5) is a single-mode hollow waveguide.

6. The microwave or millimeter wave passive device (1) according to claim 3, wherein: The at least one array (7) of radiatively coupled or directly electromagnetically coupled resonant structures (9) is configured to provide at least one microwave or millimeter wave frequency stop band (FSB), and the subwavelength guided mode of the passive device (1) is outside or below the frequency stop band (FSB).

7. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The enclosure (EWS), the interconnecting base (17) and the first and second wall structures (11, 15) define a main cavity in which the at least one array (7) of radiatively coupled or directly electromagnetically coupled resonant structures (9) is located.

8. The microwave or millimeter wave passive device (1) according to claim 7, wherein: The enclosure (EWS) is in physical contact with the first and second wall structures (11, 15).

9. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The width (W) of the hollow waveguide (5) is less than the height (h) of one or each resonant structure (9). r ) twice.

10. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The width (W) of the hollow waveguide (5) gradually decreases or changes along the guiding direction (GD).

11. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The height (h) of the hollow waveguide (5) gradually decreases or changes along the guiding direction (GD).

12. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The periodicity, radius or height (h r ) gradually decreases or changes along the guiding direction (GD).

13. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The hollow waveguide (5) extends along the guiding direction (GD) in a twisted manner or in a curved manner to define at least one bend.

14. The microwave or millimeter wave passive device (1) according to claim 13, wherein: The resonant structures (9) of the at least one array (7) are relatively tilted with respect to each other along the guiding direction (GD) of the twisted hollow waveguide (5).

15. The microwave or millimeter wave passive device (1) according to claim 1, wherein: The distance between the array (7) and the first wall structure (11) and / or the second wall structure (15) defines the bandwidth of the microwave or millimeter wave frequency passband (FPB).

16. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The microwave or millimeter wave passive component is configured to change the cutoff frequency (f c ) to define the bandwidth of the microwave or millimeter wave frequency passband (FPB).

17. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The first wall structure (11) and / or the second wall structure (15) are movable and configured to be displaced relative to the array (7).

18. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The array (7) of radiatively coupled or directly electromagnetically coupled resonant structures (9) is periodic or aperiodic.

19. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The array (7) is a 1D array or a linear array or an achiral array.

20. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: Each local resonant structure (9) comprises or consists of a resonant metamaterial configured to generate or provide at least one or more local resonators (LR).

21. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The resonant structure (9) is configured to generate a hybrid band gap.

22. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: Each resonant structure (9) comprises or consists of an elongated conductive element of sub-wavelength extension or length.

23. The microwave or millimeter wave passive device (1) according to claim 3, wherein: The resonant frequency (f r ) is defined by the length or elongated extension of the resonant structure (9), and / or the bandwidth of the subwavelength guided mode of the microwave passive device (1) is defined by the length or elongated extension of the resonant structure (9).

24. The microwave or millimeter wave passive device (1) according to claim 23, wherein: Each resonant structure (9) comprises or consists of an elongated conductive wire or pin.

25. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The first wall structure (11) and the second wall structure (15) comprise or consist of continuous metal walls.

26. The microwave or millimeter wave passive device (1) according to claim 1 or 2, further comprising a resonant metamaterial located between the at least one array (7) of the radiation-coupled or directly electromagnetically coupled resonant structures (9) and the first wall structure (11), and a resonant metamaterial located between the at least one array (7) of the radiation-coupled or directly electromagnetically coupled resonant structures (9) and the second wall structure (15).

27. The microwave or millimeter wave passive device (1) according to claim 26, wherein: The resonant metamaterial is configured to induce a forbidden frequency band.

28. The microwave or millimeter wave passive device (1) according to claim 26, wherein: The resonant metamaterial comprises or is composed of a plurality or a group of elongated conductors (25).

29. The microwave or millimeter wave passive device (1) according to claim 28, wherein: The elongated conductor (25) defines a microwave or millimeter wave subwavelength elongated conductor.

30. The microwave or millimeter wave passive device (1) according to claim 28, wherein: The elongated conductor (25) extends in the same direction as the resonant structure (9).

31. The microwave or millimeter wave passive component (1) according to any one of claims 28 to 30, wherein: The elongated electrical conductors (25) are randomly positioned.

32. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The hollow waveguide (5) is free of resonant metamaterial or artificial wall between the at least one array (7) of the radiatively coupled or directly electromagnetically coupled resonant structures (9) and the first wall structure (11), and is free of resonant metamaterial or artificial wall between the at least one array (7) of the radiatively coupled or directly electromagnetically coupled resonant structures (9) and the second wall structure (15).

33. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The hollow waveguide (5) includes a closed hollow waveguide or a hollow metal waveguide or consists of a closed hollow waveguide or a hollow metal waveguide.

34. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The hollow waveguide (5) is a rectangular or cylindrical waveguide.

35. The microwave or millimeter wave passive component (1) according to claim 1 or 2, further comprising a first terminal or probe (19A) and a second terminal or probe (19B), the array (7) being located between the first terminal and the second terminal (19A, 19B).

36. The microwave or millimeter wave passive device (1) according to claim 35, wherein: The first terminal or probe (19A) and / or the second terminal or probe (19B) include or consist of a coaxial terminal or probe or a rectangular waveguide.

37. The microwave or millimeter wave passive device (1) according to claim 35, wherein: The first terminal or probe (19A) and / or the second terminal or probe (19B) include or consist of a strip-shaped terminal or probe.

38. The microwave or millimeter wave passive device (1) according to claim 1 or 2, further comprising a second metamaterial port or connector, the second metamaterial port or connector comprising a plurality of radiation coupling or direct electromagnetic coupling resonant structures, the plurality of radiation coupling or direct electromagnetic coupling resonant structures being configured to transmit electromagnetic waves to the outside of the microwave or millimeter wave passive device (1), the at least one array (7) being located between the first metamaterial port and the second metamaterial port.

39. The microwave or millimeter wave passive device (1) according to claim 38, wherein: The first metamaterial port and / or the second metamaterial port includes: - a hollow core waveguide configured to support a transverse electric (TE) mode of microwave or millimeter electromagnetic radiation; and a plurality of radiatively coupled or directly electromagnetically coupled resonant structures enclosed within the hollow-core waveguide, the plurality of radiatively coupled or directly electromagnetically coupled resonant structures configured to provide radiatively coupled or directly electromagnetically coupled local resonators (LRs) and at least one frequency stop band (FSB), the plurality of radiatively coupled or directly electromagnetically coupled resonant structures being located between a first wall structure and a second wall structure of the hollow-core waveguide, wherein each resonant structure extends from an interconnected base of the hollow-core waveguide into the hollow-core waveguide to define a subwavelength resonant structure, and wherein consecutive resonant structures are separated by a subwavelength distance.

40. The microwave or millimeter wave passive component (1) according to claim 38, wherein: The at least one array (7) is located between a plurality of radiatively coupled or directly electromagnetically coupled resonant structures of the first metamaterial port and a plurality of radiatively coupled or directly electromagnetically coupled resonant structures of the second metamaterial port.

41. The microwave or millimeter wave passive component (1) according to claim 38, wherein: The resonant frequency (f r ) is lower than the resonant frequency of the resonant structure of the plurality of radiatively coupled or directly electromagnetically coupled resonant structures of the second metamaterial port.

42. The microwave or millimeter wave passive component (1) according to any one of claims 39 to 41, wherein: The resonant frequencies of the resonant structures of the multiple radiation-coupled or directly electromagnetically coupled resonant structures of the first metamaterial port are higher than the cutoff frequency of the hollow waveguide of the first metamaterial port, and / or the resonant frequencies of the resonant structures of the multiple radiation-coupled or directly electromagnetically coupled resonant structures of the second metamaterial port are higher than the cutoff frequency of the hollow waveguide of the second metamaterial port.

43. A microwave or millimeter wave passive component (1) according to any one of the preceding claims 39 to 41, wherein: The width (W) of the hollow waveguide of the first metamaterial port is greater than the height (h) of the resonant structure or each resonant structure of the first metamaterial port. r ), and / or the width (W) of the hollow waveguide of the second metamaterial port is greater than the height (h) of the resonant structure or each resonant structure of the second metamaterial port r ) twice.

44. The microwave or millimeter wave passive component (1) according to claim 38, wherein: The local resonant structures of the radiation coupling or direct electromagnetic coupling of the first metamaterial port are arranged in a periodic or aperiodic pattern, or are randomly arranged inside the hollow waveguide of the first metamaterial port, and / or the local resonant structures of the radiation coupling or direct electromagnetic coupling of the second metamaterial port are arranged in a periodic or aperiodic pattern, or are randomly arranged inside the hollow waveguide of the second metamaterial port.

45. The microwave or millimeter wave passive component (1) according to claim 38, wherein: The height of the resonant structure of the first metamaterial port (h r ) and the resonant structure of the first metamaterial port defines a frequency or frequency range at which at least one selected microwave or millimeter wave signal is allowed to enter the microwave or millimeter wave passive device (1).

46. ​​The microwave or millimeter wave passive component (1) according to claim 38, wherein: The height of the resonant structure of the second metamaterial port (h r ) and the resonant structure of the second metamaterial port defines a frequency or frequency range at which at least one selected microwave or millimeter wave signal is transmitted outside of the microwave or millimeter wave passive device (1).

47. The microwave or millimeter wave passive component (1) according to claim 38, wherein: The first metamaterial port is attached to or integrally formed with the hollow waveguide (5) of the microwave or millimeter wave passive device (1), and / or the second metamaterial port is attached to or integrally formed with the hollow waveguide (5) of the microwave or millimeter wave passive device (1).

48. The microwave or millimeter wave passive component (1) according to claim 38, wherein: The first metamaterial port comprises a connection device configured to connect the microwave or millimeter wave passive device (1) to another device, and / or the second metamaterial port comprises a connection device configured to connect the microwave or millimeter wave passive device (1) to another device.

49. The microwave or millimeter wave passive component (1) according to claim 48, wherein: The connecting device includes a waveguide flange or consists of a waveguide flange.

50. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The microwave or millimeter wave passive device (2) is a microwave bandpass filter (3).

51. The microwave or millimeter wave passive device (1) according to claim 1, wherein: The hollow waveguide (5) comprises a third wall structure (29) extending in the guiding direction (GD), and the interconnection base (17) extends between the first wall structure (11), the second wall structure (15) and the third wall structure (29); and wherein the at least one array (7) comprises a first sub-array (31) of resonant structures (9) extending inside the hollow waveguide (5), a second sub-array (33) of resonant structures (9) and a third sub-array (35) of resonant structures (9) or consists of a first sub-array (31) of resonant structures (9) extending inside the hollow waveguide (5), a second sub-array (33) of resonant structures (9) and a third sub-array (35) of resonant structures (9), the first sub-array (31) being located between the first wall structure (11) and the second wall structure (15), the second sub-array (33) being located between the first wall structure (11) and the third wall structure (29), and the third sub-array (35) being located between the second wall structure (15) and the third wall structure (29), The spacing (ds1) between the first wall structure (11) and the second wall structure (15) is greater than the spacing (ds2) between the first wall structure (11) and the third wall structure (29) and / or between the second wall structure (15) and the third wall structure (29). 2， ds3), and / or wherein the resonant structure (9) of one sub-array (31, 33, 35) is configured to define a resonant frequency (f r ).

52. The microwave or millimeter wave passive component (1) according to claim 51, comprising a first port, a second port and a third port.

53. The microwave or millimeter wave passive component (1) according to claim 52, wherein: The first port is an input port or channel, and the second port and the third port are output ports or channels.

54. The microwave or millimeter wave passive component (1) according to any one of claims 51 to 53, wherein: The first wall structure, the second wall structure and the third wall structure (11, 15, 29) comprise or consist of continuous metal walls.

55. The microwave or millimeter wave passive device (1) according to claim 52 or 53, further comprising a first metamaterial port or connector, the first metamaterial port or connector comprising a plurality of radiation coupling or direct electromagnetic coupling resonant structures, the plurality of radiation coupling or direct electromagnetic coupling resonant structures being configured to couple or transmit electromagnetic waves into the microwave or millimeter wave passive device (1), a second metamaterial port or connector comprising a plurality of radiation coupling or direct electromagnetic coupling resonant structures, the plurality of radiation coupling or direct electromagnetic coupling resonant structures being configured to transmit electromagnetic waves out of the microwave or millimeter wave passive device (1), and a third metamaterial port or connector comprising a plurality of radiation coupling or direct electromagnetic coupling resonant structures, the plurality of radiation coupling or direct electromagnetic coupling resonant structures being configured to transmit electromagnetic waves out of the microwave or millimeter wave passive device (1).

56. The microwave or millimeter wave passive component (1) according to claim 55, wherein: Each of the first metamaterial port or connector, the second metamaterial port or connector, and the third metamaterial port or connector comprises: - a hollow core waveguide configured to support a transverse electric (TE) mode of microwave or millimeter electromagnetic radiation; and a plurality of radiatively coupled or directly electromagnetically coupled resonant structures enclosed within the hollow-core waveguide, the plurality of radiatively coupled or directly electromagnetically coupled resonant structures configured to provide radiatively coupled or directly electromagnetically coupled local resonators (LRs) and at least one frequency stop band (FSB), the plurality of radiatively coupled or directly electromagnetically coupled resonant structures being located between a first wall structure and a second wall structure of the hollow-core waveguide, wherein each resonant structure extends from an interconnected base of the hollow-core waveguide into the hollow-core waveguide to define a subwavelength resonant structure, and wherein consecutive resonant structures are separated by a subwavelength distance.

57. The microwave or millimeter wave passive component (1) according to claim 55, wherein: The first metamaterial port or connector is connected to the first port, the second metamaterial port or connector is connected to the second port, and the third metamaterial port or connector is connected to the third port.

58. The microwave or millimeter wave passive component (1) according to claim 55, wherein: The first sub-array (31) and the second sub-array (33) are located between the first metamaterial port or connector and the second metamaterial port or connector, and the first sub-array (31) and the third sub-array (35) are located between the first metamaterial port or connector and the second metamaterial port or connector.

59. A microwave or millimeter wave passive component (1) according to any one of claims 51 to 53, comprising a first terminal or probe (19A), a second terminal or probe (19B) and a third terminal or probe (19C), wherein: The first sub-array (31) and the second sub-array (33) are located between the first terminal or probe (19A) and the second terminal or probe (19B), and the first sub-array (31) and the third sub-array (35) are located between the first terminal or probe (19A) and the third terminal or probe (19C).

60. The microwave or millimeter wave passive component (1) according to any one of claims 51 to 53, wherein The microwave or millimeter wave passive device (1) is a duplexer or a Y-junction duplexer (27).

61. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The hollow waveguide (5) includes a third wall structure (43), a fourth wall structure (45) and a fifth wall structure (47), and the interconnection base (17) extends between the first wall structure, the second wall structure, the third wall structure, the fourth wall structure and the fifth wall structure (11, 15, 43, 45, 47); and wherein the at least one array (7) comprises a first subarray (51) of resonant structures (9) extending inside the hollow waveguide (5), a second subarray (53) of resonant structures (9) and a third subarray (55) of resonant structures (9), or consists of a first subarray (51) of resonant structures (9) extending inside the hollow waveguide (5), a second subarray (53) of resonant structures (9) and a third subarray (55) of resonant structures (9), the first subarray (51) being located between the first wall structure and the second wall structure (11, 15), the second subarray (53) being located between the third wall structure and the fifth wall structure (43, 47), and the third subarray (55) being located between the fourth wall structure and the fifth wall structure (45, 47), wherein the interval (W1) between the first wall structure and the second wall structure (11, 15) is greater than the interval (W2) between the third wall structure and the fifth wall structure (43, 47) and / or the interval (W2) between the fourth wall structure and the fifth wall structure (45, 47), and / or wherein the resonant structure (9) of one sub-array (31, 33, 35) is configured to define a resonant frequency (f r ).

62. The microwave or millimeter wave passive component (1) according to claim 61, comprising a first port, a second port and a third port.

63. The microwave or millimeter wave passive device (1) according to claim 62, wherein: The first port is an input port or channel, and the second and third ports are output ports or channels.

64. A microwave or millimeter wave passive component (1) according to any one of claims 56 to 58, wherein The first wall structure, the second wall structure, the third wall structure, the fourth wall structure and the fifth wall structure (11, 15, 43, 45, 47) include or consist of continuous metal walls.

65. The microwave or millimeter wave passive device (1) according to claim 62, further comprising a first metamaterial port or connector, the first metamaterial port or connector comprising a plurality of radiation coupling or direct electromagnetic coupling resonant structures, the plurality of radiation coupling or direct electromagnetic coupling resonant structures being configured to couple or transmit electromagnetic waves into the microwave or millimeter wave passive device (1), a second metamaterial port or connector comprising a plurality of radiation coupling or direct electromagnetic coupling resonant structures, the plurality of radiation coupling or direct electromagnetic coupling resonant structures being configured to transmit electromagnetic waves out of the microwave or millimeter wave passive device (1), and a third metamaterial port or connector comprising a plurality of radiation coupling or direct electromagnetic coupling resonant structures, the plurality of radiation coupling or direct electromagnetic coupling resonant structures being configured to transmit electromagnetic waves out of the microwave or millimeter wave passive device (1).

66. The microwave or millimeter wave passive component (1) according to claim 65, wherein Each of the first metamaterial port or connector, the second metamaterial port or connector, and the third metamaterial port or connector comprises: - a hollow core waveguide configured to support a transverse electric (TE) mode of microwave or millimeter electromagnetic radiation; and a plurality of radiatively coupled or directly electromagnetically coupled resonant structures enclosed within the hollow-core waveguide, the plurality of radiatively coupled or directly electromagnetically coupled resonant structures configured to provide radiatively coupled or directly electromagnetically coupled local resonators (LRs) and at least one frequency stop band (FSB), the plurality of radiatively coupled or directly electromagnetically coupled resonant structures being located between a first wall structure and a second wall structure of the hollow-core waveguide, wherein each resonant structure extends from an interconnected base of the hollow-core waveguide into the hollow-core waveguide to define a subwavelength resonant structure, and wherein consecutive resonant structures are separated by a subwavelength distance.

67. The microwave or millimeter wave passive component (1) according to claim 65 or 66, wherein: The first metamaterial port or connector is connected to the first port, the second metamaterial port or connector is connected to the second port, and the third metamaterial port or connector is connected to the third port.

68. The microwave or millimeter wave passive component (1) according to claim 65 or 66, wherein: The first sub-array (51) and the second sub-array (55) are located between the first metamaterial port or connector and the second metamaterial port or connector, and the first sub-array (51) and the third sub-array (53) are located between the first metamaterial port or connector and the second metamaterial port or connector.

69. The microwave or millimeter wave passive component (1) according to claim 61, comprising a first terminal or probe (19A), a second terminal or probe (19B) and a third terminal or probe (19C), wherein: The first sub-array and the second sub-array (51, 53) are located between the first terminal or probe (19A) and the second terminal or probe (19B), and the first sub-array and the third sub-array (51, 55) are located between the first terminal or probe (19A) and the third terminal or probe (19C).

70. The microwave or millimeter wave passive component (1) according to claim 61, wherein The microwave or millimeter wave passive device (1) is a duplexer or a T-junction duplexer (27).

71. The microwave or millimeter wave passive device (1) according to claim 1, wherein: The hollow waveguide (5) includes a plurality of wall structures (61A, 61B, 61C, 61D, 61E, 61F, 61G, 61H, 61I, 61J, 61K, 61L), and the interconnection base (17) extends between the plurality of wall structures (61A, 61B, 61C, 61D, 61E, 61F, 61G, 61H, 61I, 61J, 61K, 61L); and Also included are a plurality of arrays (7A, 7B, 7C, 7D, 7E, 7F) of resonant structures (9) extending inside the hollow waveguide (5), each array (7A, 7B, 7C, 7D, 7E, 7F) being located between two wall structures (61A, 61B, 61C, 61D, 61E, 61F, 61G, 61H, 61I, 61J, 61K, 61L), and wherein the resonant structure (9) of one array (7A, 7B, 7C, 7D, 7E, 7F) is configured to define a resonant frequency (f) that is different from the resonant frequency of the other arrays (7A, 7B, 7C, 7D, 7E, 7F) r ).

72. The microwave or millimeter wave passive component (1) according to claim 71, wherein: Each array (7A, 7B, 7C, 7D, 7E, 7F) of resonant structures (9) defines an output port or channel.

73. The microwave or millimeter wave passive device (1) according to claim 72, further comprising each output port or each channel shared input port defined by an array (7A, 7B, 7C, 7D, 7E, 7F) of resonant structures (9).

74. The microwave or millimeter wave passive device (1) according to any one of claims 71 to 73, further comprising a plurality of metamaterial ports or connectors, each metamaterial port or connector comprising a plurality of radiation coupling or direct electromagnetic coupling resonant structures, wherein the plurality of radiation coupling or direct electromagnetic coupling resonant structures are configured to transmit electromagnetic waves to the outside of the microwave or millimeter wave passive device (1).

75. The microwave or millimeter wave passive component (1) according to claim 74, wherein: The plurality of metamaterial ports or connectors are connected to the output ports of the microwave or millimeter wave passive device (1).

76. The microwave or millimeter wave passive device (1) according to claim 74, further comprising a metamaterial port or connector, wherein the metamaterial port or connector comprises a plurality of radiation coupling or direct electromagnetic coupling resonant structures, wherein the plurality of radiation coupling or direct electromagnetic coupling resonant structures are configured to couple or transmit electromagnetic waves into the microwave or millimeter wave passive device (1).

77. The microwave or millimeter wave passive component (1) according to claim 76, wherein The metamaterial port or connector is connected to the input port of the microwave or millimeter wave passive device (1).

78. The microwave or millimeter wave passive component (1) according to claim 74, wherein Each metamaterial port or connector consists of: - a hollow core waveguide configured to support a transverse electric (TE) mode of microwave or millimeter electromagnetic radiation; and a plurality of radiatively coupled or directly electromagnetically coupled resonant structures enclosed within the hollow-core waveguide, the plurality of radiatively coupled or directly electromagnetically coupled resonant structures configured to provide radiatively coupled or indirectly electromagnetically coupled local resonators (LRs) and at least one frequency stop band (FSB), the plurality of radiatively coupled or directly electromagnetically coupled resonant structures being located between a first wall structure and a second wall structure of the hollow-core waveguide, wherein each resonant structure extends from an interconnected base of the hollow-core waveguide into the hollow-core waveguide to define a subwavelength resonant structure, and wherein consecutive resonant structures are separated by a subwavelength distance.

79. The microwave or millimeter wave passive component (1) according to claim 74, wherein Each array (7A, 7B, 7C, 7D, 7E, 7F) of resonant structures (9) is located between an input metamaterial port or connector and an output metamaterial port or connector.

80. The microwave or millimeter wave passive component (1) according to any one of claims 71 to 73, comprising a plurality of terminals or probes (19A, 19B, 19C, 19D, 19E, 19F, 19SH), wherein: Each array (7A, 7B, 7C, 7D, 7E, 7F) is located between a first terminal or probe and a second terminal or probe (19SH, 19A, 19 B, 19 C, 19 D, 19 E, 19 F), and each array (7A, 7B, 7C, 7D, 7E, 7F) has or shares a common first terminal or probe (19SH).

81. A microwave or millimeter wave passive component (1) according to any one of claims 71 to 73, wherein The microwave or millimeter wave passive device (1) is a multiplexer (59).

82. The microwave or millimeter wave passive device (1) according to claim 1 or 2, wherein: The microwave or millimeter wave passive device (1) is a microwave or millimeter wave passive device for a satellite communication system or a microwave or millimeter wave passive device for a radar system.

83. A microwave passive component operating method comprising the following steps: - providing a microwave or millimeter wave passive component (1) according to any one of the preceding claims, and - Setting the bandwidth of the microwave passive component (1) by varying the distance between the array (7) and the first wall structure (11) and / or the second wall structure (15).

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