Magnetic random access memory and devices
CN115701271BActive Publication Date: 2026-08-28BEIHANG UNIV
Patent Information
- Application Number
- CN202110873391.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-07-30
- Publication Date
- 2026-08-28
- Estimated Expiration
- 2041-07-30
AI Technical Summary
Technical Problem
例如：直接施加x方向的外加磁场，但该方式不利于大规模集成同时难以实现低功耗；通过改变磁性层的形状各向异性实现完全翻转，该方式会增加工艺的复杂程度，同时也不利于大规模集成；增加反铁磁层，通过控制材料成分、厚度及退火工艺等方式实现对垂直磁矩的完全翻转，但该方式可提供的面内等效场有限，并且给铁磁层制备良好的PMA增加了难度
Benefits of technology
[0022]本发明的磁性随机存储器包括种子层、设于所述种子层上的自旋轨道矩配线层以及设于所述自旋轨道矩配线层上的磁隧道结。其中，种子层具有第一晶向。自旋轨道矩配线层的晶格结构受到所述种子层的作用而具有第二晶向。从而，当向自旋轨道矩配线层输入自旋轨道矩电流时，所述自旋轨道矩配线层形成面外方向的类阻尼矩，该类阻尼矩可使磁隧道结的铁磁层的磁矩方向发生确定性翻转，能够提高铁磁层的翻转效率且功耗低，有利于大规模集成。由此，本发明可通过调控种子层的材料及生长工艺，诱导生长出具有特定对称性的自旋轨道矩配线层，从而产生具有面外方向类阻尼矩的SOT，且具有较大的电流-自旋流转化效率(自旋霍尔角)既能提高翻转效率，也能够在翻转垂直磁各向异性磁矩时避免额外打破对称性的外加磁场。
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Figure CN115701271B_ABST
Abstract
The application provides a magnetic random memory and device, the magnetic random memory comprises: a seed layer having a first crystal direction; a spin-orbit torque wiring layer arranged on the seed layer, a crystal lattice structure of the spin-orbit torque wiring layer has a second crystal direction under the action of the seed layer, and the spin-orbit torque wiring layer forms an out-of-plane direction damping torque when a spin-orbit torque current is input to the spin-orbit torque wiring layer; and a magnetic tunnel junction arranged on the spin-orbit torque wiring layer, the application can make the spin-orbit torque wiring layer have the spin-orbit torque of the out-of-plane direction damping torque, has a larger current-to-spin current conversion efficiency (spin Hall angle), can improve the flip efficiency, and can avoid an additional applied magnetic field for breaking symmetry when flipping a perpendicular magnetic anisotropy magnetic moment.
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Citation Information
Patent Citations
Spin-orbit torque magnetization rotational element and magnetic memory
CN108011039A
Spin-Orbit Torque Magnetic Device and spin-current magnetic laminate
CN109427959A
Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication
US20190304653A1