Optical proximity effect correction method and device based on modulation of evanescent wave field intensity attenuation characteristics

Abstract

The present application discloses a method and device for correcting optical proximity effects based on modulation of evanescent wave field intensity attenuation characteristics, relating to the field of photolithography resolution enhancement technology. The method comprises: determining the effective range of action of the near-field optical proximity effect on a target pattern by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave within a photoresist; using the target pattern as an input image for surface plasmon lithography, and determining the accuracy and target compensation exposure dose of a target exposure pattern within the photoresist corresponding to the target pattern under preset exposure conditions; determining an area on the target pattern requiring compensation modulation, and compensating and correcting the near-field optical proximity effect within the effective range based on the target compensation exposure dose to obtain a corrected pattern; using the corrected pattern as an input image, and comparing the contour of the corrected exposure pattern within the photoresist extracted under the preset exposure conditions to determine the accuracy and cost function curve data of the corrected exposure pattern.

Description

Technical Field

[0001] The present application relates to the field of photolithography resolution enhancement technology, and in particular to an optical proximity effect correction method and device based on modulation of evanescent wave field intensity attenuation characteristics. Background Art

[0002] Photolithography is a key technology in the manufacturing of very large-scale integrated circuits (VLSI). As chip integration continues to increase and feature sizes continue to decrease, the requirements for lithographic resolution and post-exposure image quality are becoming increasingly stringent. Plasmonic lithography, a highly promising next-generation lithography technology, offers the potential to break the diffraction limit of traditional optical lithography and eliminate the need for physical masks. This provides a key method and technical approach for the development of high-resolution, low-cost, efficient, and large-area nanolithography.

[0003] Currently, surface plasmon lithography (SPLI) has been experimentally verified to meet the resolution requirements of micro-nano manufacturing for technology nodes of 14 nanometers (nm) and below. However, as integrated circuit feature sizes continue to shrink, the near-field optical proximity effect (OPE) becomes increasingly severe. This not only significantly reduces the resolution of the exposed pattern but also dramatically increases the distortion of the resulting exposed pattern within the photoresist. This leads to deviations in the physical and electrical properties of the fabricated nanodevices, affecting product functionality and yield, and severely limiting the practical applicability of SPLI. Therefore, to meet the high-performance requirements for the size and quality of nanostructured devices in integrated circuits, near-field OPE has become a critical issue that needs to be addressed in SPLI.

[0004] In order to further improve the exposure performance of surface plasma lithography technology and solve the impact of near-field OPE phenomenon on the quality of exposed patterns in photoresist, researchers have proposed a variety of resolution enhancement technologies (RET), mainly including optical proximity correction (Optical Proximity Correction) technology, off-axis illumination (OAI) technology, phase shifting masks (PSM) technology, sub-resolution assist feature (SRAF) technology, etc.

[0005] While these resolution enhancement techniques can improve the quality of exposed patterns within photoresist to a certain extent, they suffer from various issues, such as long processing time, complex calculations, low precision, or high costs. Furthermore, as nanolithography process nodes continue to decrease, target patterns and densities continue to increase. Complex 2D patterns have become the main type of nanoprocess layout. However, using these traditional resolution enhancement techniques, it is difficult to obtain good exposed patterns on silicon wafers while maintaining high resolution using surface plasma lithography systems. Therefore, a method to improve the imaging resolution and exposed pattern fidelity of surface plasma lithography systems is urgently needed. Summary of the Invention

[0006] The purpose of this application is to provide an optical proximity effect correction method and device based on the modulation of the evanescent wave field intensity attenuation characteristics to solve the problems of low imaging resolution and exposure pattern fidelity of existing surface plasma lithography systems.

[0007] In a first aspect, the present application provides an optical proximity effect correction method based on the modulation of the evanescent wave field intensity attenuation characteristics, the method comprising:

[0008] Model and analyze the three-dimensional field intensity distribution data reaching the photoresist surface in surface plasma lithography to determine the point spread function;

[0009] Analyzing an exposure pattern of a two-dimensional pattern formed in the photoresist based on the point spread function to determine a corresponding relationship between a field intensity attenuation characteristic of an evanescent wave and a quality of the exposure pattern;

[0010] Based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposed pattern, the effective range of the near-field optical proximity effect on the target pattern is determined by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist;

[0011] Using the target pattern as an input image for the surface plasma lithography, determining the accuracy of a target exposure pattern in the photoresist corresponding to the target pattern and a target compensation exposure dose under preset exposure conditions;

[0012] determining an area on the target pattern that requires compensation modulation, and compensating and correcting the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected pattern;

[0013] The correction pattern is used as an input image, and the contour of the correction exposure pattern extracted in the photoresist under the preset exposure conditions is compared to determine the accuracy of the correction exposure pattern and cost function curve data.

[0014] When the above technical solution is adopted, the optical proximity effect correction method based on the modulation of the field intensity attenuation characteristics of the evanescent wave provided in the embodiment of the present application can model and analyze the three-dimensional field intensity distribution data reaching the surface of the photoresist in surface plasma lithography to determine the point spread function; based on the point spread function, the exposure pattern of the two-dimensional pattern formed in the photoresist is analyzed to determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern; based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposure pattern, the effective effect of the near-field optical proximity effect on the target pattern is determined by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist. The invention relates to a method for obtaining a near-field optical proximity effect by using a target pattern as an input image for surface plasma lithography, determining the accuracy of a target exposure pattern in the photoresist corresponding to the target pattern under preset exposure conditions and a target compensation exposure dose; determining an area on the target pattern that requires compensation modulation, and compensating and correcting the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected correction pattern; using the correction pattern as an input image, and comparing the contour of the correction exposure pattern in the photoresist extracted under the preset exposure conditions to determine the accuracy of the correction exposure pattern and cost function curve data. Since this optimization method is an experimental verification model established based on the lithography imaging model and the photoresist imaging model, it can not only truly reflect the impact of the near-field optical proximity effect on the exposure pattern quality in each process step of the surface plasma lithography process, but also further verify the significant role played by the surface evanescent wave attenuation characteristics unique to surface plasma lithography in the generation of the near-field optical proximity effect, providing a practical solution for reducing feature size errors and improving the uniformity of exposure pattern quality. It has strong practical applicability and can effectively improve the calibration accuracy of exposure pattern quality. At the same time, it also effectively reduces the complexity of simulation and improves computational efficiency. It has very strong practical applicability, which is of great significance for further research on low-cost, large-area, high-exposure-quality surface plasma lithography systems.

[0015] In one possible implementation, analyzing the exposure pattern of the two-dimensional pattern formed in the photoresist based on the point spread function to determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern includes:

[0016] Establishing a lithography imaging model and a photoresist imaging model for the surface plasma lithography;

[0017] determining a corresponding relationship between exposure dose and exposure time based on the point spread function;

[0018] determining an exposure pattern of a two-dimensional pattern formed in the photoresist based on a correspondence between the exposure dose and the exposure time;

[0019] Based on the photolithography imaging model and the photoresist imaging model, and in combination with the exposure pattern of the two-dimensional pattern, a corresponding relationship between the field intensity attenuation characteristic of the evanescent wave and the quality of the exposure pattern is determined.

[0020] In one possible implementation, the step of using the target pattern as an input image for the surface plasma lithography and determining the accuracy of a target exposure pattern in the photoresist corresponding to the target pattern under preset exposure conditions and a target compensation exposure dose includes:

[0021] Using the target pattern as an input image for the surface plasma lithography, and extracting the outline of the target exposure pattern in the photoresist under preset exposure conditions;

[0022] An error value between the target pattern and the profile of the target exposure pattern is determined, and the accuracy of the target exposure pattern and a target compensation exposure dose are determined based on the error value.

[0023] In a possible implementation, the correspondence between the field intensity attenuation characteristic and the exposure pattern quality is that the optical proximity effect has the field intensity attenuation characteristic, and the exposure pattern quality varies with the field intensity attenuation characteristic.

[0024] In one possible implementation, based on the correspondence between the field intensity attenuation characteristics and the quality of the exposed pattern, determining the effective range of the near-field optical proximity effect on the target pattern by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist includes:

[0025] Based on the correspondence between the field intensity attenuation characteristics and the quality of the exposed pattern, the field intensity attenuation characteristics corresponding to the evanescent wave in the near field range are determined for quantitative analysis to determine the correspondence between the spatial frequency in the photoresist and the near field intensity attenuation length;

[0026] Based on the corresponding relationship between the spatial frequency in the photoresist and the near-field field intensity attenuation length, the effective action range of the near-field optical proximity effect on the target pattern is determined.

[0027] In one possible implementation, determining an area on the target pattern that requires compensation modulation, and compensating and correcting the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected correction pattern includes:

[0028] The area on the target graph that needs to be compensated and modulated is determined in a point-line-plane manner, and the near-field optical proximity effect is compensated and corrected using a gradient descent algorithm within the effective range to obtain the corrected correction graph.

[0029] In a possible implementation, the corresponding relationship between the exposure dose and the exposure time includes:

[0030] Wherein, the psf represents the point spread function; the N exp Indicates the total number of pixels, the B n (x i ,y j ) represents a two-bit pixel matrix of the target graphic; psf (xx i ,yy j ) represents the optical field intensity distribution on the photoresist surface; the t n represents the exposure time, the D arb (x, y) represents the exposure dose.

[0031] In a possible implementation, the correspondence between the spatial frequency in the photoresist and the near-field intensity attenuation length includes:

[0032]

[0033] Among them, the k z (z) represents the spatial frequency in the photoresist, and β(z) represents the near-field intensity attenuation length.

[0034] In a possible implementation, establishing the lithography imaging model and the photoresist imaging model of the surface plasmon lithography includes:

[0035] Acquiring the three-dimensional field intensity distribution data of the photoresist surface;

[0036] The photolithography imaging model and the photoresist imaging model are established based on the three-dimensional field intensity distribution data.

[0037] In a second aspect, the present application further provides an optical proximity effect correction device based on the modulation of the evanescent wave field intensity attenuation characteristics, the device being used to implement any of the optical proximity effect correction methods based on the modulation of the evanescent wave field intensity attenuation characteristics described in the first aspect, the device comprising:

[0038] A first determination module is used to model and analyze the three-dimensional field intensity distribution data reaching the photoresist surface in surface plasma lithography to determine the point spread function;

[0039] a second determining module, configured to analyze an exposure pattern of a two-dimensional pattern formed in the photoresist based on the point spread function, and determine a corresponding relationship between a field intensity attenuation characteristic of an evanescent wave and a quality of the exposure pattern;

[0040] a third determining module, configured to determine an effective range of action of the near-field optical proximity effect on the target pattern by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist based on the correspondence between the field intensity attenuation characteristics and the quality of the exposed pattern;

[0041] a fourth determination module, configured to use the target pattern as an input image for the surface plasma lithography and determine the accuracy of a target exposure pattern in the photoresist corresponding to the target pattern and a target compensation exposure dose under preset exposure conditions;

[0042] a fifth determining module, configured to determine an area on the target pattern that requires compensation modulation, and to compensate and correct the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected pattern;

[0043] The sixth determination module is configured to take the correction pattern as an input image, and compare the contour of the correction exposure pattern extracted in the photoresist under the preset exposure conditions to determine the accuracy of the correction exposure pattern and cost function curve data.

[0044] In a possible implementation, the second determining module includes:

[0045] Establishing a submodule for establishing a lithography imaging model and a photoresist imaging model of the surface plasma lithography;

[0046] A first determining submodule, configured to determine a correspondence between an exposure dose and an exposure time based on the point spread function;

[0047] a second determining submodule, configured to determine an exposure pattern of a two-dimensional pattern formed in the photoresist based on a correspondence between the exposure dose and the exposure time;

[0048] The third determining submodule is configured to determine a correspondence between the field intensity attenuation characteristic of the evanescent wave and the quality of the exposure pattern based on the photolithography imaging model and the photoresist imaging model in combination with the exposure pattern of the two-dimensional pattern.

[0049] In a possible implementation, the fourth determining module includes:

[0050] An extraction submodule, configured to use the target pattern as an input image for the surface plasma lithography and extract the contour of the target exposure pattern in the photoresist under preset exposure conditions;

[0051] The fourth determination submodule is configured to determine an error value between the target pattern and the contour of the target exposure pattern, and determine the accuracy of the target exposure pattern and a target compensation exposure dose based on the error value.

[0052] In a possible implementation, the correspondence between the field intensity attenuation characteristic and the exposure pattern quality is that the optical proximity effect has the field intensity attenuation characteristic, and the exposure pattern quality varies with the field intensity attenuation characteristic.

[0053] In a possible implementation, the third determining module includes:

[0054] a fifth determining submodule, configured to determine, based on the correspondence between the field intensity attenuation characteristic and the quality of the exposed pattern, the field intensity attenuation characteristic corresponding to the evanescent wave in the near field range, perform quantitative analysis, and determine the correspondence between the spatial frequency in the photoresist and the near field intensity attenuation length;

[0055] The sixth determining submodule is configured to determine an effective range of action of the near-field optical proximity effect on a target pattern based on a correspondence between a spatial frequency in the photoresist and a near-field field intensity attenuation length.

[0056] In a possible implementation, the fifth determining module includes:

[0057] The seventh determination submodule is used to determine the area on the target pattern that needs to be compensated and modulated by a point-line-plane method, and to compensate and correct the near-field optical proximity effect using a gradient descent algorithm within the effective range to obtain the corrected correction pattern.

[0058] In a possible implementation, the corresponding relationship between the exposure dose and the exposure time includes:

[0059] Wherein, the psf represents the point spread function; the N exp Indicates the total number of pixels, the B n (x i ,y j ) represents a two-bit pixel matrix of the target graphic; psf (xx i ,yy j ) represents the optical field intensity distribution on the photoresist surface; the t n represents the exposure time, the D arb (x, y) represents the exposure dose.

[0060] In a possible implementation, the correspondence between the spatial frequency in the photoresist and the near-field intensity attenuation length includes:

[0061]

[0062] Among them, the k z (z) represents the spatial frequency in the photoresist, and β(z) represents the near-field intensity attenuation length.

[0063] In a possible implementation, the establishing submodule includes:

[0064] an acquisition unit, configured to acquire the three-dimensional field intensity distribution data of the photoresist surface;

[0065] An establishing unit is used to establish the photolithography imaging model and the photoresist imaging model based on the three-dimensional field intensity distribution data.

[0066] The beneficial effects of the optical proximity effect correction device based on the modulation of the evanescent wave field intensity attenuation characteristics provided by the second aspect are the same as the beneficial effects of the optical proximity effect correction method based on the modulation of the evanescent wave field intensity attenuation characteristics described in the first aspect or any possible implementation of the first aspect, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0067] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0068] Figure 1 A schematic diagram of a flow chart of an optical proximity effect correction method based on modulation of evanescent wave field intensity attenuation characteristics provided in an embodiment of the present application is shown;

[0069] Figure 2 A schematic flow chart of another optical proximity effect correction method based on the modulation of the evanescent wave field intensity attenuation characteristic provided by an embodiment of the present application is shown;

[0070] Figure 3 A schematic diagram of a near-field optical proximity effect of a surface plasmon lithography technique provided by an embodiment of the present application is shown;

[0071] Figure 4 A schematic diagram showing the effect of a near-field optical proximity effect on the quality of an exposed pattern provided by an embodiment of the present application is shown;

[0072] FIG5 is a schematic diagram showing a target pattern provided by an embodiment of the present application and a comparison between a target exposure pattern in a photoresist obtained under preset exposure conditions and the target pattern;

[0073] Figure 6 A schematic diagram of an exposure dose compensation diagram provided in an embodiment of the present application is shown;

[0074] FIG7 shows a schematic diagram showing a comparison between a correction pattern provided by an embodiment of the present application and a final exposure pattern in a photoresist obtained therefrom and an original pattern;

[0075] Figure 8A schematic structural diagram of an optical proximity effect correction device based on modulation of evanescent wave field intensity attenuation characteristics provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0076] To facilitate the clear description of the technical solutions of the embodiments of the present application, in the embodiments of the present application, words such as "first" and "second" are used to distinguish between identical or similar items with substantially the same functions and effects. For example, the first threshold and the second threshold are merely used to distinguish between different thresholds and do not limit their order. Those skilled in the art will understand that words such as "first" and "second" do not limit the quantity or execution order, and words such as "first" and "second" do not necessarily mean that they are different.

[0077] It should be noted that, in this application, words such as "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described in this application as "exemplary" or "for example" should not be construed as being preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.

[0078] In this application, "at least one" means one or more, and "more" means two or more. "And / or" describes the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can mean: the existence of A alone, the existence of A and B at the same time, and the existence of B alone, where A and B can be singular or plural. The character " / " generally indicates that the previous and next associated objects are in an "or" relationship. "At least one of the following items" or similar expressions refers to any combination of these items, including any combination of single items or plural items. For example, at least one of a, b or c can mean: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b and c, where a, b, c can be single or multiple.

[0079] Currently, surface plasmon lithography (SPLI) has been experimentally verified to meet the resolution requirements of micro-nano manufacturing for technology nodes of 14 nanometers (nm) and below. However, as integrated circuit feature sizes continue to shrink, the near-field optical proximity effect (OPE) becomes increasingly severe. This not only significantly reduces the resolution of the exposed pattern but also dramatically increases the distortion of the resulting exposed pattern within the photoresist. This leads to deviations in the physical and electrical properties of the fabricated nanodevices, affecting product functionality and yield, and severely limiting the practical applicability of SPLI. Therefore, to meet the high-performance requirements for the size and quality of nanostructured devices in integrated circuits, near-field OPE has become a critical issue that needs to be addressed in SPLI.

[0080] In order to further improve the exposure performance of surface plasma lithography technology and solve the impact of near-field OPE phenomenon on the quality of exposed patterns in photoresist, researchers have proposed a variety of resolution enhancement technologies (RET), mainly including optical proximity correction (OPC) technology, off-axis illumination (OAI) technology, phase shifting masks (PSM) technology, sub-resolution assist feature (SRAF) technology, etc.

[0081] While these RET technologies can improve the quality of exposed patterns within photoresist to a certain extent, they suffer from various issues, including lengthy processing times, complex computational complexity, low precision, and high costs. Furthermore, as nanolithography process nodes continue to decrease, target patterns and densities continue to increase, and complex 2D patterns have become the primary type of nanoprocess layout. However, using these traditional RET technologies, surface plasma lithography systems struggle to achieve good exposed patterns on silicon wafers while maintaining high resolution.

[0082] Therefore, it is necessary to conduct in-depth research on the generation mechanism and physical calculation of near-field OPE in surface plasmon lithography systems, so as to propose a solution that can accurately and efficiently solve this problem, so as to further improve the imaging resolution and exposure pattern fidelity of surface plasmon lithography systems, and thus meet the requirements of integrated circuit process technology nodes for surface plasmon lithography imaging accuracy.

[0083] The current traditional pixel-based optimization method for optical proximity correction of two-dimensional images belongs to the "rule-based" optical proximity correction method. Specifically, the method quantitatively analyzes the aerial image (the result of convolving the point spread function (PSF) of surface plasmon lithography with the binary image of the target pattern, identifies the geometric errors between the aerial image contour and the target pattern, and proposes a method to arbitrarily modify the geometric distribution of the original target pattern to improve the image distortion issues such as corner rounding, line width deviation, and line end shrinkage of the exposed pattern in the photoresist.

[0084] However, because this method is a rule-based optical proximity correction method based on the imaging characteristics of the aerial image of the target pattern after exposure and the geometric information of its local environment, while extremely easy to implement, it can only correct pattern distortion problems existing in local areas of the imaging result. As the complexity and density of the target pattern continue to increase, this method has difficulty in achieving global pattern correction. More importantly, because the quality of the final exposed pattern in the photoresist is also affected by the development time and the chemical reaction between the developer and the photoresist during the development process, the error between the final exposed pattern in the photoresist and the target pattern still exists after correction using optical proximity correction methods based solely on aerial imaging results. Therefore, the accuracy of this method still needs to be improved.

[0085] To address the above issues, this application quantitatively characterizes the near-field enhancement effect (OPE), a unique feature of surface plasmon lithography (SPLI). This study reveals the physical mechanisms of near-field OPE generation and the impact of the complex attenuation characteristics and asymmetric field distribution of evanescent waves (Evanescent Waves) on the edge feature size of exposed patterns. Furthermore, based on the mathematical relationship between lithography parameters and metrics representing lithographic pattern fidelity, this application proposes an OPC optimization method based on modulated Evanescent Wave field intensity attenuation characteristics through joint optimization of exposure dose and target pattern. Compared to traditional OPC optimization methods, this method, based on the principle of exposure dose compensation, further increases the degree of optimization freedom and can more effectively improve the imaging and exposure pattern quality of SPL systems. This method provides a technical foundation for the mass production of low-cost, high-resolution, and high-fidelity arbitrary two-dimensional nanopatterns, and offers theoretical support for the development of micro- and nano-lithography processing technologies.

[0086] Figure 1 FIG. 1 shows a flow chart of an optical proximity effect correction method based on the modulation of the evanescent wave field intensity attenuation characteristic provided by an embodiment of the present application, as shown in FIG. Figure 1As shown, the optical proximity effect correction method based on the modulation of the evanescent wave field intensity attenuation characteristic includes:

[0087] Step 101: Modeling and analyzing the three-dimensional field intensity distribution data reaching the photoresist surface in surface plasma lithography to determine the point spread function.

[0088] Step 102: analyzing the exposure pattern of the two-dimensional pattern formed in the photoresist based on the point spread function to determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern.

[0089] In the present application, a lithography imaging model and a photoresist imaging model of the surface plasma lithography can be established; the correspondence between the exposure dose and the exposure time can be determined based on the point spread function; the exposure pattern of the two-dimensional pattern formed in the photoresist can be determined based on the correspondence between the exposure dose and the exposure time; based on the lithography imaging model and the photoresist imaging model, combined with the exposure pattern of the two-dimensional pattern, the correspondence between the field intensity attenuation characteristics of the evanescent wave and the exposure pattern quality can be determined.

[0090] The corresponding relationship between the field intensity attenuation characteristic and the exposure pattern quality is that the optical proximity effect has the field intensity attenuation characteristic, and the exposure pattern quality changes with the field intensity attenuation characteristic.

[0091] Step 103: Based on the correspondence between the field intensity attenuation characteristics and the quality of the exposed pattern, the effective range of the near-field optical proximity effect on the target pattern is determined by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist.

[0092] In the present application, based on the correspondence between the field intensity attenuation characteristics and the quality of the exposed pattern, the field intensity attenuation characteristics corresponding to the evanescent wave in the near-field range can be determined for quantitative analysis, and the correspondence between the spatial frequency in the photoresist and the near-field field intensity attenuation length can be determined; based on the correspondence between the spatial frequency in the photoresist and the near-field field intensity attenuation length, the effective range of the near-field optical proximity effect on the target pattern can be determined.

[0093] Step 104: Using the target pattern as an input image for the surface plasma lithography, determining the accuracy of the target exposure pattern in the photoresist and the target compensation exposure dose corresponding to the target pattern under preset exposure conditions.

[0094] In the present application, the target pattern can be used as the input image of the surface plasma lithography, and the outline of the target exposure pattern in the photoresist can be extracted under preset exposure conditions; the error value between the target pattern and the outline of the target exposure pattern is determined, and the accuracy of the target exposure pattern and the target compensation exposure dose are determined based on the error value.

[0095] Step 105: determining an area on the target pattern that needs to be compensated and modulated, and compensating and correcting the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected pattern.

[0096] In the present application, the area on the target graph that requires compensation modulation can be determined by a point-line-surface method, and the near-field optical proximity effect can be compensated and corrected using a gradient descent algorithm within the effective range to obtain the corrected correction graph.

[0097] Step 106: taking the correction pattern as an input image, and comparing the contour of the correction exposure pattern extracted in the photoresist under the preset exposure conditions, to determine the accuracy of the correction exposure pattern and cost function curve data.

[0098] In summary, three-dimensional field intensity distribution data reaching the photoresist surface in surface plasmon lithography can be modeled and analyzed to determine a point spread function; based on the point spread function, an exposure pattern of a two-dimensional pattern formed in the photoresist is analyzed to determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern; based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposure pattern, the effective range of the near-field optical proximity effect on the target pattern is determined by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist; using the target pattern as an input image for surface plasmon lithography, the accuracy and target compensation exposure dose of the target exposure pattern in the photoresist corresponding to the target pattern under preset exposure conditions are determined; an area on the target pattern requiring compensation modulation is determined, and compensation correction for the near-field optical proximity effect is performed within the effective range based on the target compensation exposure dose to obtain a corrected pattern; using the corrected pattern as an input image, the contour of the corrected exposure pattern in the photoresist extracted under the preset exposure conditions is compared to determine the accuracy and cost function curve data of the corrected exposure pattern. Since this optimization method is an experimental verification model established based on the lithography imaging model and the photoresist imaging model, it can not only truly reflect the impact of the near-field optical proximity effect on the exposure pattern quality in each process step of the surface plasma lithography process, but also further verify the significant role played by the surface evanescent wave attenuation characteristics unique to surface plasma lithography in the generation of the near-field optical proximity effect, providing a practical solution for reducing feature size errors and improving the uniformity of exposure pattern quality. It has strong practical applicability and can effectively improve the calibration accuracy of exposure pattern quality. At the same time, it also effectively reduces the complexity of simulation and improves computational efficiency. It has very strong practical applicability, which is of great significance for further research on low-cost, large-area, high-exposure-quality surface plasma lithography systems.

[0099] Figure 2 FIG. 1 shows a flow chart of another optical proximity effect correction method based on the modulation of the evanescent wave field intensity attenuation characteristic provided by an embodiment of the present application, as shown in FIG. Figure 2 As shown, the optical proximity effect correction method based on the modulation of the evanescent wave field intensity attenuation characteristics includes:

[0100] Step 201: Modeling and analyzing the three-dimensional field intensity distribution data reaching the photoresist surface in surface plasma lithography to determine the point spread function.

[0101] In this application, the three-dimensional field intensity distribution that finally reaches the photoresist surface after passing through the nano-bow-tie aperture structure of its focusing element in surface plasmon lithography can be modeled and analyzed, and used as the point spread function (PSF) of the surface plasmon lithography system.

[0102] Step 202: analyzing the exposure pattern of the two-dimensional pattern formed in the photoresist based on the point spread function to determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern.

[0103] In this application, the generation mechanism of the near-field optical proximity effect (near-field OPE) can be revealed by establishing a surface plasmon lithography imaging model and a photoresist imaging model and analyzing the final exposure pattern of the complex two-dimensional pattern in the photoresist.

[0104] Specifically, the specific implementation of the above step 202 includes the following sub-steps:

[0105] Sub-step A1: establishing a lithography imaging model and a photoresist imaging model for the surface plasma lithography.

[0106] The implementation process of the above sub-step A1 may include: acquiring the three-dimensional field intensity distribution data of the photoresist surface; and establishing the photolithography imaging model and the photoresist imaging model based on the three-dimensional field intensity distribution data.

[0107] Sub-step A2: determining the corresponding relationship between exposure dose and exposure time based on the point spread function.

[0108] When a surface plasma lithography system performs arbitrary pattern exposure, the exposure dose distribution required for the final exposed pattern in the photoresist is determined by the convolution relationship between the point spread function (PSF), the exposure time, and the exposure dose modulation mapping of the binary pixel matrix of the target pattern, that is, by the corresponding relationship between the exposure dose and the exposure time, wherein the corresponding relationship between the exposure dose and the exposure time includes:

[0109] Wherein, the psf represents the point spread function; the N exp Indicates the total number of pixels, the B n (x i ,y j ) represents a two-bit pixel matrix of the target graphic; psf (xx i ,yy j ) represents the optical field intensity distribution on the photoresist surface; the t n represents the exposure time, the D arb (x, y) represents the exposure dose.

[0110] Sub-step A3: determining an exposure pattern of a two-dimensional pattern formed in the photoresist based on the corresponding relationship between the exposure dose and the exposure time.

[0111] In the present application, an exposure pattern can be obtained only when the exposure dose in the photoresist reaches or exceeds the critical dose (Thresholddose) of the photoresist.

[0112] Figure 3 FIG. 1 is a schematic diagram showing a near-field optical proximity effect of a surface plasmon lithography technique provided by an embodiment of the present application, such as Figure 3 As shown in the figure, the vertical axis represents the exposure dose. After adding the background effect, the feature size changes from W to W±Δ. Furthermore, the optical proximity effect can be regarded as a background effect that can affect the exposure dose, thereby affecting the feature size W of the target pattern.

[0113] Sub-step A4: Based on the photolithography imaging model and the photoresist imaging model, and in combination with the exposure pattern of the two-dimensional pattern, determining the correspondence between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern.

[0114] The corresponding relationship between the field intensity attenuation characteristic and the exposure pattern quality is that the optical proximity effect has the field intensity attenuation characteristic, and the exposure pattern quality changes with the field intensity attenuation characteristic.

[0115] Figure 4 FIG. 1 shows a schematic diagram of the effect of a near-field optical proximity effect on the quality of an exposure pattern provided by an embodiment of the present application. Figure 4As shown, scanning is performed based on the isointensity contour of PSF, and the target pattern is exposed to obtain an exposure pattern (Pattern profile) of a two-dimensional pattern formed in the photoresist. Furthermore, a cross-section of the exposure pattern is analyzed, with the vertical axis representing the dose. The exposure pattern can only be obtained when the exposure dose in the photoresist reaches or exceeds the critical dose (Threshold dose) of the photoresist. Since the point spread function (PSF) of surface plasmon lithography has relatively complex field intensity distribution and field intensity attenuation characteristics, and is affected by the geometric characteristics of the nano-bow-tie aperture structure, the distribution of the point spread function is also asymmetric in the xy plane, resulting in a relatively complex impact on the quality of the final exposure pattern in the photoresist. For example, there are problems such as edge rounding, line width deviation, and line end indentation, and the pattern is also asymmetric. It can be determined that the optical proximity effect has the field intensity attenuation characteristic, and the exposure pattern quality varies with the field intensity attenuation characteristic.

[0116] Step 203: Based on the correspondence between the field intensity attenuation characteristics and the exposure pattern quality, the field intensity attenuation characteristics corresponding to the evanescent wave in the near field range are determined for quantitative analysis to determine the correspondence between the spatial frequency in the photoresist and the near field intensity attenuation length.

[0117] In the present application, the field intensity attenuation characteristics of the evanescent wave in the photoresist can be modeled and analyzed to determine the effective range of action of the near-field optical proximity effect on the target pattern. Since the point spread function (PSF) of surface plasma lithography determines the field intensity distribution in the photoresist, the PSF is mainly composed of the evanescent wave in the near-field range. The near-field attenuation characteristics of the evanescent wave will cause the high-frequency energy carried by it to be lost rapidly, and because the proximity effects produced under different feature sizes and patterns are different, the high-frequency loss of the spectrum after filtering by the exposure system is also different, and the high-frequency imaging information lost is also different, which leads to different optical proximity distortions in the exposed pattern. Therefore, the near-field attenuation characteristics of the evanescent wave can be quantitatively analyzed, and then the relationship between the attenuation of high-frequency information with the exposure depth can be established. According to the exposure model of the near-field lithography system, there is the following relationship between the spatial frequency (spatial frequency, kz(z)) in the photoresist and the near-field field intensity decay length (decaylength, β(z)):

[0118]

[0119] Among them, the kz (z) represents the spatial frequency in the photoresist, and β(z) represents the near-field intensity attenuation length.

[0120] Therefore, it can be determined that the physical mechanism of the near-field optical proximity effect in the surface plasmon lithography system is mainly due to the near-field attenuation characteristics of the evanescent wave in the photoresist, which decays rapidly with the increase of exposure depth, resulting in the loss of the high-frequency information it carries.

[0121] It should be noted that this physical mechanism is completely different from the high-frequency information loss caused by the diffraction limit or the physical properties of the exposure elements / structures in traditional optical lithography systems. The discovery of this physical mechanism can provide theoretical support for proposing an optical proximity effect correction method that can fundamentally and effectively improve the quality of exposure patterns.

[0122] Step 204: determining the effective range of the near-field optical proximity effect on the target pattern based on the corresponding relationship between the spatial frequency in the photoresist and the near-field field intensity attenuation length.

[0123] Step 205: Using the target pattern as an input image for the surface plasma lithography, and extracting the outline of the target exposure pattern in the photoresist under preset exposure conditions.

[0124] Among them, the preset exposure conditions are also the optimal exposure conditions. The embodiment of the present application does not limit its specific values ​​and can be adjusted according to the actual application scenario.

[0125] Figure 5 shows a target pattern provided by an embodiment of the present application and a schematic diagram of a comparison between a target exposure pattern in a photoresist obtained under preset exposure conditions and a target pattern, wherein Figure 5(a) shows the target pattern, and Figure 5(b) shows the target pattern (Target pattern) exposed and the outline of the target exposure pattern (Pattern profile) formed in the photoresist under the optimal exposure conditions.

[0126] Step 206: Determine an error value between the target pattern and the contour of the target exposure pattern, and determine the accuracy of the target exposure pattern and a target compensation exposure dose based on the error value.

[0127] In the present application, in combination with FIG5 , the error value between the outline of the target exposure pattern and the target pattern can be compared to calculate the accuracy of the final exposure pattern, that is, the target exposure pattern, and obtain a compensation diagram for exposure dose modulation, and determine the target compensation exposure dose through the compensation diagram.

[0128] Figure 6 FIG. 1 shows a schematic diagram of an exposure dose compensation diagram provided by an embodiment of the present application, such as Figure 6As shown, the compensated exposure dose corresponding to each position requiring exposure compensation can be determined according to the exposure dose compensation map.

[0129] Step 207: determining an area on the target pattern that needs to be compensated and modulated, and compensating and correcting the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected pattern.

[0130] In the present application, the area on the target graph that requires compensation modulation can be determined by a point-line-surface method, and the near-field optical proximity effect can be compensated and corrected using a gradient descent algorithm within the effective range to obtain the corrected correction graph.

[0131] Step 208: taking the correction pattern as an input image, and comparing the contour of the correction exposure pattern extracted in the photoresist under the preset exposure conditions, to determine the accuracy of the correction exposure pattern and cost function curve data.

[0132] In this application, the correction pattern can be used as the input image, and the contour of the final exposure pattern in the photoresist obtained under the optimal exposure conditions is compared with the original target pattern, and the accuracy of the final exposure pattern and the cost function curve are calculated. This application is a "hybrid" optical proximity effect correction optimization method based on the exposure dose compensation principle. It can not only achieve precise control of the exposure dose, but also effectively save optimization time, and has strong practical applicability. Therefore, compared with other optical proximity effect correction optimization methods, the optical proximity effect correction optimization method proposed in this application is more suitable for application in complex two-dimensional pattern processing and large-area exposure patterns, further improving the practical applicability of surface plasma lithography processes.

[0133] Figure 7 shows a schematic diagram of a comparison between a correction pattern provided by an embodiment of the present application and the final exposure pattern obtained in the photoresist and the original pattern. Figure 7(a) shows the correction pattern, and Figure 7(b) is a schematic diagram of the target pattern (Target pattern), which is the original pattern, and the target exposure pattern (Pattern profile) formed in the photoresist under optimal exposure conditions, which is the outline of the final exposure pattern.

[0134] The purpose of this application is to propose an optical proximity effect correction optimization method that can quantitatively analyze the physical root causes of the near-field optical proximity effect in surface plasmon lithography processes and accurately calibrate it. By establishing a three-dimensional lithography imaging model and a photoresist imaging model for surface plasmon lithography, the impact of the field intensity distribution and attenuation characteristics of the point spread function on the quality of the exposed pattern within the photoresist is quantitatively analyzed. The physical root cause of the near-field optical proximity effect is revealed to be primarily due to the rapid loss of high-frequency information caused by the evanescent wave as the exposure depth within the photoresist increases. A calculation formula for the attenuation length that varies with exposure depth is proposed, quantitatively analyzing the range of influence of the evanescent wave's field intensity attenuation characteristics on the target pattern. Based on this, an optical proximity effect correction optimization method based on the principle of exposure dose compensation is proposed.

[0135] In summary, the optical proximity effect correction method based on the modulation of the evanescent wave field intensity attenuation characteristics provided in the embodiments of the present application can model and analyze the three-dimensional field intensity distribution data reaching the photoresist surface in surface plasmon lithography to determine the point spread function; based on the point spread function, the exposure pattern of the two-dimensional pattern formed in the photoresist is analyzed to determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposed pattern; based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposed pattern, the effective range of the near-field optical proximity effect on the target pattern is determined by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist; The target pattern is used as an input image for surface plasmon lithography, and the accuracy and target compensation exposure dose of the target exposure pattern in the photoresist corresponding to the target pattern under preset exposure conditions are determined; an area on the target pattern that requires compensation modulation is determined, and compensation correction is performed on the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected correction pattern; the corrected pattern is used as an input image, and a contour of the corrected exposure pattern in the photoresist extracted under the preset exposure conditions is compared to determine the accuracy and cost function curve data of the corrected exposure pattern. Since this optimization method is an experimental verification model established based on the lithography imaging model and the photoresist imaging model, it can not only truly reflect the impact of the near-field optical proximity effect on the exposure pattern quality in each process step of the surface plasma lithography process, but also further verify the significant role played by the surface evanescent wave attenuation characteristics unique to surface plasma lithography in the generation of the near-field optical proximity effect, providing a practical solution for reducing feature size errors and improving the uniformity of exposure pattern quality. It has strong practical applicability and can effectively improve the calibration accuracy of exposure pattern quality. At the same time, it also effectively reduces the complexity of simulation and improves computational efficiency. It has very strong practical applicability, which is of great significance for further research on low-cost, large-area, high-exposure-quality surface plasma lithography systems.

[0136] Figure 8 The structure diagram of an optical proximity effect correction device based on the modulation of the evanescent wave field intensity attenuation characteristic provided by an embodiment of the present application is shown, which is used to implement any optical proximity effect correction method based on the modulation of the evanescent wave field intensity attenuation characteristic described in the present application, such as Figure 8 As shown, the optical proximity effect correction device 300 based on the modulation of the evanescent wave field intensity attenuation characteristic includes:

[0137] The first determination module 301 is used to model and analyze the three-dimensional field intensity distribution data reaching the photoresist surface in surface plasma lithography to determine the point spread function;

[0138] a second determining module 302 for analyzing an exposure pattern of a two-dimensional pattern formed in the photoresist based on the point spread function to determine a correspondence between a field intensity attenuation characteristic of an evanescent wave and a quality of the exposure pattern;

[0139] A third determining module 303 is configured to determine an effective range of the near-field optical proximity effect on the target pattern by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist based on the correspondence between the field intensity attenuation characteristics and the quality of the exposed pattern;

[0140] A fourth determination module 304 is configured to use the target pattern as an input image for the surface plasma lithography and determine the accuracy of a target exposure pattern in the photoresist corresponding to the target pattern under preset exposure conditions and a target compensation exposure dose;

[0141] A fifth determining module 305 is configured to determine an area on the target pattern that requires compensation modulation, and to compensate and correct the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected pattern.

[0142] The sixth determination module 306 is configured to take the correction pattern as an input image, and compare the contour of the correction exposure pattern extracted in the photoresist under the preset exposure conditions to determine the accuracy of the correction exposure pattern and cost function curve data.

[0143] In a possible implementation, the second determining module includes:

[0144] Establishing a submodule for establishing a lithography imaging model and a photoresist imaging model of the surface plasma lithography;

[0145] A first determining submodule, configured to determine a correspondence between an exposure dose and an exposure time based on the point spread function;

[0146] a second determining submodule, configured to determine an exposure pattern of a two-dimensional pattern formed in the photoresist based on a correspondence between the exposure dose and the exposure time;

[0147] The third determining submodule is configured to determine a correspondence between the field intensity attenuation characteristic of the evanescent wave and the quality of the exposure pattern based on the photolithography imaging model and the photoresist imaging model in combination with the exposure pattern of the two-dimensional pattern.

[0148] In a possible implementation, the fourth determining module includes:

[0149] An extraction submodule, configured to use the target pattern as an input image for the surface plasma lithography and extract the contour of the target exposure pattern in the photoresist under preset exposure conditions;

[0150] The fourth determination submodule is configured to determine an error value between the target pattern and the contour of the target exposure pattern, and determine the accuracy of the target exposure pattern and a target compensation exposure dose based on the error value.

[0151] In a possible implementation, the correspondence between the field intensity attenuation characteristic and the exposure pattern quality is that the optical proximity effect has the field intensity attenuation characteristic, and the exposure pattern quality varies with the field intensity attenuation characteristic.

[0152] In a possible implementation, the third determining module includes:

[0153] a fifth determining submodule, configured to determine, based on the correspondence between the field intensity attenuation characteristic and the quality of the exposed pattern, the field intensity attenuation characteristic corresponding to the evanescent wave in the near field range, perform quantitative analysis, and determine the correspondence between the spatial frequency in the photoresist and the near field intensity attenuation length;

[0154] The sixth determining submodule is configured to determine an effective range of action of the near-field optical proximity effect on a target pattern based on a correspondence between a spatial frequency in the photoresist and a near-field field intensity attenuation length.

[0155] In a possible implementation, the fifth determining module includes:

[0156] The seventh determination submodule is used to determine the area on the target pattern that needs to be compensated and modulated by a point-line-plane method, and to compensate and correct the near-field optical proximity effect using a gradient descent algorithm within the effective range to obtain the corrected correction pattern.

[0157] In a possible implementation, the corresponding relationship between the exposure dose and the exposure time includes:

[0158] Wherein, the psf represents the point spread function; the N exp Indicates the total number of pixels, the B n (x i ,y j ) represents a two-bit pixel matrix of the target graphic; psf (xx i ,yy j ) represents the optical field intensity distribution on the photoresist surface; the t n represents the exposure time, the D arb (x, y) represents the exposure dose.

[0159] In a possible implementation, the correspondence between the spatial frequency in the photoresist and the near-field intensity attenuation length includes:

[0160]

[0161] Among them, the k z (z) represents the spatial frequency in the photoresist, and β(z) represents the near-field intensity attenuation length.

[0162] In a possible implementation, the establishing submodule includes:

[0163] an acquisition unit, configured to acquire the three-dimensional field intensity distribution data of the photoresist surface;

[0164] An establishing unit is used to establish the photolithography imaging model and the photoresist imaging model based on the three-dimensional field intensity distribution data.

[0165] The optical proximity effect correction device based on the modulation of the field intensity attenuation characteristics of the evanescent wave provided in the embodiment of the present application can model and analyze the three-dimensional field intensity distribution data reaching the surface of the photoresist in surface plasma lithography to determine the point spread function; based on the point spread function, the exposure pattern of the two-dimensional pattern formed in the photoresist is analyzed to determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern; based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposure pattern, the effective range of the near-field optical proximity effect on the target pattern is determined by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist; the A target pattern is used as an input image for the surface plasma lithography, and the accuracy and target compensation exposure dose of a target exposure pattern in the photoresist corresponding to the target pattern under preset exposure conditions are determined; an area on the target pattern that requires compensation modulation is determined, and compensation correction is performed on the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected correction pattern; the corrected pattern is used as an input image, and a contour of the corrected exposure pattern in the photoresist extracted under the preset exposure conditions is compared to determine the accuracy and cost function curve data of the corrected exposure pattern. Since this optimization method is an experimental verification model established based on the lithography imaging model and the photoresist imaging model, it can not only truly reflect the impact of the near-field optical proximity effect on the exposure pattern quality in each process step of the surface plasma lithography process, but also further verify the significant role played by the surface evanescent wave attenuation characteristics unique to surface plasma lithography in the generation of the near-field optical proximity effect, providing a practical solution for reducing feature size errors and improving the uniformity of exposure pattern quality. It has strong practical applicability and can effectively improve the calibration accuracy of exposure pattern quality. At the same time, it also effectively reduces the complexity of simulation and improves computational efficiency. It has very strong practical applicability, which is of great significance for further research on low-cost, large-area, high-exposure-quality surface plasma lithography systems.

[0166] The present application provides an optical proximity effect correction device based on the modulation of the evanescent wave field intensity attenuation characteristic, which can achieve the following Figure 1 To avoid repetition, the optical proximity effect correction method based on the modulation of the evanescent wave field intensity attenuation characteristic shown in any of FIG. 7 will not be described again here.

[0167] Although the present application is described herein in conjunction with various embodiments, in the process of implementing the claimed application, those skilled in the art may understand and implement other variations of the disclosed embodiments by reviewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude multiple situations. A single processor or other unit may implement several functions listed in the claims. Certain measures are recorded in different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0168] Although the present application has been described with reference to specific features and embodiments thereof, it is apparent that various modifications and combinations may be made thereto without departing from the spirit and scope of the present application. Accordingly, this specification and the drawings are merely illustrative of the present application as defined by the appended claims and are deemed to cover any and all modifications, variations, combinations or equivalents within the scope of the present application. Obviously, those skilled in the art may make various modifications and variations to the present application without departing from the spirit and scope of the present application. Thus, the present application is intended to include such modifications and variations as fall within the scope of the claims of the present application and their equivalents.

Claims

1. An optical proximity effect correction method based on the modulation of the evanescent wave field intensity attenuation characteristic, characterized in that: The method comprises: Model and analyze the three-dimensional field intensity distribution data reaching the photoresist surface in surface plasma lithography to determine the point spread function; Analyzing an exposure pattern of a two-dimensional pattern formed in the photoresist based on the point spread function to determine a corresponding relationship between a field intensity attenuation characteristic of an evanescent wave and a quality of the exposure pattern; Based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposed pattern, the effective range of the near-field optical proximity effect on the target pattern is determined by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist; Using the target pattern as an input image for the surface plasma lithography, determining the accuracy of a target exposure pattern in the photoresist corresponding to the target pattern and a target compensation exposure dose under preset exposure conditions; determining an area on the target pattern that requires compensation modulation, and compensating and correcting the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected pattern; The correction pattern is used as an input image, and the contour of the correction exposure pattern extracted in the photoresist under the preset exposure conditions is compared to determine the accuracy of the correction exposure pattern and cost function curve data.

2. The method according to claim 1, characterized in that The step of analyzing the exposure pattern of the two-dimensional pattern formed in the photoresist based on the point spread function to determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern includes: Establishing a lithography imaging model and a photoresist imaging model for the surface plasma lithography; determining a corresponding relationship between exposure dose and exposure time based on the point spread function; determining an exposure pattern of a two-dimensional pattern formed in the photoresist based on a correspondence between the exposure dose and the exposure time; Based on the photolithography imaging model and the photoresist imaging model, and in combination with the exposure pattern of the two-dimensional pattern, a corresponding relationship between the field intensity attenuation characteristic of the evanescent wave and the quality of the exposure pattern is determined.

3. The method according to claim 1, characterized in that The method of using the target pattern as an input image for the surface plasma lithography and determining the accuracy of a target exposure pattern in the photoresist corresponding to the target pattern under preset exposure conditions and a target compensation exposure dose includes: Using the target pattern as an input image for the surface plasma lithography, and extracting the outline of the target exposure pattern in the photoresist under preset exposure conditions; An error value between the target pattern and the profile of the target exposure pattern is determined, and the accuracy of the target exposure pattern and a target compensation exposure dose are determined based on the error value.

4. The method according to claim 1, wherein The corresponding relationship between the field intensity attenuation characteristic and the exposure pattern quality is that the optical proximity effect has the field intensity attenuation characteristic, and the exposure pattern quality changes with the field intensity attenuation characteristic.

5. The method according to claim 4, characterized in that Based on the correspondence between the field intensity attenuation characteristics and the quality of the exposed pattern, the effective range of the near-field optical proximity effect on the target pattern is determined by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist, including: Based on the correspondence between the field intensity attenuation characteristics and the quality of the exposed pattern, the field intensity attenuation characteristics corresponding to the evanescent wave in the near field range are determined for quantitative analysis to determine the correspondence between the spatial frequency in the photoresist and the near field intensity attenuation length; Based on the corresponding relationship between the spatial frequency in the photoresist and the near-field field intensity attenuation length, the effective action range of the near-field optical proximity effect on the target pattern is determined.

6. The method according to claim 1, characterized in that The determining of an area on the target pattern requiring compensation modulation, and compensating and correcting the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected correction pattern includes: The area on the target graph that needs to be compensated and modulated is determined in a point-line-plane manner, and the near-field optical proximity effect is compensated and corrected using a gradient descent algorithm within the effective range to obtain the corrected correction graph.

7. The method according to claim 2, characterized in that The corresponding relationship between the exposure dose and the exposure time includes: Wherein, the psf represents the point spread function; the N exp Indicates the total number of pixels, the B n (x i ,y j ) represents a two-bit pixel matrix of the target graphic; psf (xx i ,yy j ) represents the optical field intensity distribution on the photoresist surface; the t n represents the exposure time, the D arb (x, y) represents the exposure dose.

8. The method according to claim 5, characterized in that The corresponding relationship between the spatial frequency in the photoresist and the near-field intensity attenuation length includes: Among them, the k z (z) represents the spatial frequency in the photoresist, and β(z) represents the near-field intensity attenuation length.

9. The method according to claim 2, characterized in that The establishing of the lithography imaging model and the photoresist imaging model of the surface plasma lithography comprises: Acquiring the three-dimensional field intensity distribution data of the photoresist surface; The photolithography imaging model and the photoresist imaging model are established based on the three-dimensional field intensity distribution data.

10. An optical proximity effect correction device based on the modulation of the evanescent wave field intensity attenuation characteristic, characterized in that: The device for implementing the optical proximity effect correction method based on the modulation of the evanescent wave field intensity attenuation characteristics according to any one of claims 1 to 9 comprises: A first determination module is used to model and analyze the three-dimensional field intensity distribution data reaching the photoresist surface in surface plasma lithography to determine the point spread function; a second determining module, configured to analyze an exposure pattern of a two-dimensional pattern formed in the photoresist based on the point spread function, and determine a corresponding relationship between a field intensity attenuation characteristic of an evanescent wave and a quality of the exposure pattern; a third determining module, configured to determine an effective range of action of the near-field optical proximity effect on the target pattern by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist based on the correspondence between the field intensity attenuation characteristics and the quality of the exposed pattern; a fourth determination module, configured to use the target pattern as an input image for the surface plasma lithography and determine the accuracy of a target exposure pattern in the photoresist corresponding to the target pattern and a target compensation exposure dose under preset exposure conditions; a fifth determining module, configured to determine an area on the target pattern that requires compensation modulation, and to compensate and correct the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected pattern; The sixth determination module is configured to take the correction pattern as an input image, and compare the contour of the correction exposure pattern extracted in the photoresist under the preset exposure conditions to determine the accuracy of the correction exposure pattern and cost function curve data.

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