A multi-component organic-inorganic potting film, a preparation method, a structure and a device

Abstract

The application discloses a multi-component organic-inorganic potting film, a preparation method, a structure and a device. The multi-component organic-inorganic potting film comprises an organic potting layer and an inorganic layer; the organic potting layer is an organic silicon gel layer, an epoxy resin layer or a polyfluoroparaxylene layer; the inorganic layer is an inorganic oxide layer, an inorganic nitride layer or a metal oxide layer; and the organic potting layer cannot be decomposed for at least 24 hours at a temperature of 200 DEG C in air. The high-temperature potting scheme of the organic-inorganic thin film provided by the application can achieve the reliability target requirement of the normal operation of the device to be filled at a high temperature of 200 DEG C and 250 DEG C. Compared with the commonly used organic silicon gel or epoxy resin packaging, the inorganic layer has excellent barrier properties to water and oxygen, so that the potting material has good moisture-proof capacity, and the module failure caused by the penetration of water and oxygen into the device after the power device is subjected to cold and hot impact is overcome.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of power device packaging, and more particularly relates to a multi-component organic-inorganic potting film, a preparation method, a structure and a device. BACKGROUND

[0002] The potting material can strengthen the integrity of the power device, improve the resistance to external impact and vibration, improve the insulation between internal components and circuits, facilitate device miniaturization and light weight, and also avoid direct exposure of components and circuits, thereby improving the waterproof, dustproof and moisture-proof performance of the device. Efficient potting is conducive to heat transfer and heat conduction of the power semiconductor device.

[0003] At present, the commonly used power device potting materials mainly include epoxy resin and silicone gel. The epoxy resin potting glue is mostly hard, has good sealing function, but a small part is soft. The ordinary epoxy resin potting glue has a temperature resistance of about 100℃, and the temperature resistance of the heat curing is about 150℃. It is easy to penetrate into the product gap, has excellent adhesion to various metal substrates and porous substrates, and has excellent electrical insulation capability. It is simple to operate and very stable before and after curing. It is suitable for small and medium-sized electronic devices under normal temperature conditions and has no special requirements on the environment and mechanical properties. However, the epoxy resin potting glue has weak resistance to cold and heat changes, and is prone to cracking after being subjected to cold and heat impact. Water vapor penetrates into the device interior through the cracks, and the moisture-proof ability is poor. The main reason for the cracking of the material when facing external high impact overload is the stress concentration in the epoxy resin potting material, which will seriously affect the normal operation of the circuit system being potted. The silicone gel is mostly soft glue, and most of them are polymer and curing agent two-component silicone gel. The specific steps are: mixing of polymer and curing agent, stirring, vacuuming to remove bubbles, and pouring. The curing mechanism is a dehydration condensation reaction mechanism between individual groups, and heating can accelerate curing. The silicone gel provides long-term effective protection for electronic devices and sensitive circuits, has stable dielectric insulation performance, and forms a soft elastomer after curing, which eliminates the stress generated by impact and vibration in a large temperature and humidity range, can maintain the original physical and electrical properties in various working environments, and has good chemical stability. However, the adhesion of the silicone gel is poor. In addition, the temperature resistance of the power module is up to 175℃, which cannot match the faster switching speed and higher breakdown voltage of the power device. SUMMARY

[0004] In view of the above defects or improvement needs of the prior art, the present application provides a multi-component organic-inorganic potting film, a preparation method, a structure and a device, which aims to complete the potting of the semiconductor power device by combining the organic layer and the inorganic layer, so that the semiconductor power device can withstand a high temperature of 200℃ or even 250℃, and can match the faster switching speed and higher breakdown voltage of the power device.

[0005] To achieve the above object, according to one aspect of the present application, a multi-component organic-inorganic potting film is provided, characterized in that it comprises an organic potting layer and an inorganic layer; the organic potting layer is a silicone gel, an epoxy resin or a polyfluoroparaxylene layer; the inorganic layer is an inorganic oxide layer, an inorganic nitride layer or a metal oxide layer; wherein the organic potting layer is not decomposed at a temperature of 200℃ in air for at least 24 hours.

[0006] The high-temperature potting scheme of the organic-inorganic film stack provided by the present application can achieve the reliability target requirement of the normal operation of the potted device at a high temperature of 200℃ and 250℃. The organic potting layer can withstand a high temperature (200℃) without failure, but the organic film itself has poor water and oxygen permeability and cannot block the contact between water and oxygen and the Cu sheet of the potted device. As the preferred packaging material for devices highly sensitive to water and oxygen (such as light-emitting diodes), the inorganic film such as SiO2 and Al2O3 has good blocking property to water and oxygen and can effectively inhibit the diffusion of water and oxygen to the device. In addition, compared with the organic layer, the inorganic layer generally withstands a higher temperature, but because the coefficient of thermal expansion (CTE) of the inorganic layer does not match the components (chip, bonding wire, etc.) of the power device, the components are prone to falling off and aging at high temperatures. Therefore, the first layer cannot be an inorganic layer such as SiO2 and Al2O3, but an organic potting layer with a small difference in CTE from the power device is used to play a buffering role. Therefore, the organic-inorganic stacked potting material can enable the packaged semiconductor power device to operate normally at high temperatures. At the same time, this potting scheme will provide a more feasible reference for the exploration of future wide-bandgap semiconductor power device potting materials.

[0007] Preferably, the organic potting layer is not decomposed at a temperature of 250℃ in air for at least 20 hours; preferably, the organic potting layer is a polyfluoroparaxylene layer of VT4 type or a polyfluoroparaxylene layer of HT type.

[0008] Preferably, the mass ratio of the polymer and the curing agent in the silicone gel or the epoxy resin is 1:(0.5-1.5). Preferably, the mass ratio of the polymer and the curing agent in the silicone gel or the epoxy resin is 1:1.

[0009] Preferably, the inorganic layer is SiO2, Al2O3 or SiN.

[0010] Preferably, the thickness of the silicone gel or the epoxy resin composite is 1-10 mm, the thickness of the polyfluoroparaxylene layer is 14-20 μm, and the thickness of the inorganic layer is 10 nm-10 μm.

[0011] According to another aspect of the present application, a method for preparing a multi-component organic-inorganic potting film is provided, comprising the following steps: mixing a polymer and a curing agent in a silicone gel or an epoxy resin in a desired mass ratio, removing bubbles, and then spin-coating the mixture on a substrate to be encapsulated to form an organic potting layer; and depositing an inorganic oxide, inorganic nitride or metal oxide on the surface of the organic potting layer to form an inorganic layer.

[0012] The silicone gel or the epoxy resin can be obtained commercially. First, the polymer and the curing agent in the silicone gel or the epoxy resin are placed in a container and stirred for about 30 minutes to mix them uniformly, then the mixture is placed in a vacuum box to remove bubbles, and finally the mixed silicone gel or epoxy resin is uniformly coated on the AlN copper-clad plate by spin coating. The thickness of the silicone gel or the epoxy resin can reach millimeter level.

[0013] According to another aspect of the present application, a method for preparing a multi-component organic-inorganic potting film is provided, comprising the following steps: depositing a polyfluoroparaxylene layer on a substrate to be encapsulated by chemical vapor deposition to form an organic potting layer; and depositing an inorganic oxide, inorganic nitride or metal oxide on the surface of the organic potting layer to form an inorganic layer.

[0014] The polyfluoroparaxylene film layer can be prepared by CVD method, which can be performed on a vacuum coating device mainly composed of a sublimation furnace, a cracking furnace, a deposition chamber, a cold trap and a vacuum system. The preparation steps are as follows: (a) sublimating solid-state ring diatom into gaseous ring diatom at a certain temperature (150-175°C); (b) cracking the gaseous ring diatom into active monomer radicals at a higher temperature (650-690°C); and (c) depositing the monomer radicals on the surface of the AlN copper-clad plate substrate at low temperature to form a polyfluoroparaxylene film with the same shape as the object, and the film is uniform and free of pinholes.

[0015] The inorganic film SiO2, Al2O3 and SiN can be prepared by ALD, CVD or magnetron sputtering method. The AlN copper-clad plate coated with the organic potting layer is placed in the vacuum chamber of a vacuum coating device, and the inorganic film is deposited.

[0016] Specifically, the method for depositing inorganic layer Al2O3 or SiO2 by ALD method can be exemplified as follows: firstly, precursor trimethylaluminum is introduced into the reaction cavity to react with the hydroxyl on the AlN copper-clad plate coated with organic potting layer and to be adsorbed on the surface, and the gaseous reaction product CH4 and the excess precursor trimethylaluminum are discharged from the reaction cavity by the introduced inert gas. Then, the precursor water vapor is introduced to react with the just-adsorbed reaction product. When the reaction reaches saturation, the reaction product and the excess water vapor are discharged from the reaction cavity by the inert gas. Thus, a single layer of Al2O3 is obtained, and the next cycle is entered. The layer thickness grown in each cycle is the same, and thus the thickness of the inorganic layer grown can be accurately controlled by controlling the number of cycles. Al2O3 with a thickness of about 60 nm can be achieved at a low temperature of 80°C. The preparation steps of SiO2 are the same, and the Si source is silicon tetrachloride (SiCl4), and the oxygen source is ozone O3 prepared by introducing ozone generator from external high-purity O2 (purity 99.999%), and the deposited SiO2 has a thickness of about 50 nm.

[0017] The steps for preparing inorganic layer Al2O3 or SiO2 by magnetron sputtering method are exemplified as follows: the AlN copper-clad plate coated with organic potting layer is placed in the vacuum cavity of the magnetron sputtering instrument, the cavity is vacuumed, and the vacuum degree is lower than 2.2x10 -4 Pa. The target material is high-purity Al2O3 target, the sputtering power is 70 W, the argon amount is 20 sccm, and the sputtering time is 1 hr, and thus the inorganic thin film Al2O3 with a thickness of 1.5 μm is obtained. The deposition steps of SiO2 are the same as those of Al2O3. The target material is high-purity SiO2 target, the sputtering power is 80 W, the argon amount is 30 sccm, and the sputtering time is 0.5 hr, and thus the inorganic thin film SiO2 with a thickness of 2 μm is obtained.

[0018] According to still another aspect of the present application, there is provided a power device potting structure, which comprises a multi-component organic-inorganic potting film.

[0019] According to still another aspect of the present application, there is provided a power device, which comprises a power device potting structure.

[0020] Preferably, the power device comprises a Si-based power device, a SiC-based power device or a GaN-based power device.

[0021] Overall, compared with the prior art, the above technical solutions conceived by the present application can at least achieve the following beneficial effects.

[0022] (1) The high-temperature potting scheme of the organic-inorganic thin film stack provided by the application can achieve the reliability target requirement of the normal operation of the device being potted at 200 DEG C and 250 DEG C. Compared with the commonly used silicone gel or epoxy resin packaging, the excellent barrier property of the inorganic layer to water and oxygen enables the potting material to have good moisture-proof ability, overcoming the module failure caused by the penetration of water and oxygen into the device after the power device is subjected to cold and hot impact. Compared with the commercial silicone gel, the organic-inorganic stacked potting material provides excellent mechanical properties, protects the power device from external damage, avoids the necessary step of removing bubbles from the silicone gel, and avoids the damage of bubbles to the power module at high temperature. More importantly, for wide-bandgap semiconductor power devices (such as SiC power devices) with higher temperature resistance and faster switching speed, the commonly used potting material can only support the SiC power module to operate at a maximum of 175 DEG C, while the organic-inorganic stacked potting material provided by the application can enable the power device to work continuously at a high temperature higher than 200 DEG C without failure.

[0023] (2) In the application, the mixing ratio of the polymer and the curing agent in the silicone gel or the epoxy resin is strictly controlled to be 1:1. If the polymer ratio is too high, the potting glue may not be completely cured, which not only cannot withstand a high temperature of 250 DEG C, but also has low mechanical properties and cannot block external impact. If the curing agent ratio is too high, the potting glue is brittle and easy to crack.

[0024] (3) In the application, it is found that the type of parylene affects the temperature resistance of the packaging. For N-type, C-type and D-type parylene as the organic potting layer, the power module cannot effectively operate at a high temperature of 200 DEG C, while for VT4-type and HT-type, the wide-bandgap semiconductor device can effectively operate at a high temperature of 200 DEG C, and even can effectively operate at a high temperature of 250 DEG C. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 is a schematic diagram of the organic-inorganic thin film stack of the application;

[0026] Figure 2 is a schematic diagram of the organic-inorganic thin film stack of the application;

[0027] Figure 3 is a schematic diagram of the preparation process of the parylene layer;

[0028] Figure 4A is a photo of the R2188-SiO2 covered AlN copper clad plate obtained by the AMB process, Figure 4B is a photo of the R2188-SiO2 covered AlN copper clad plate obtained by the DBC process;

[0029] Figure 5Ais a picture of AlN Cu-clad plate covered by Al2O3 of polyfluoroparaxylene VT4 type obtained by AMB process, Figure 5B is a picture of AlN Cu-clad plate covered by Al2O3 of polyfluoroparaxylene VT4 type obtained by DBC process;

[0030] Figure 6A is a picture of AlN Cu-clad plate covered by SiO2 of polyfluoroparaxylene HT type obtained by AMB process, Figure 6B is a picture of AlN Cu-clad plate covered by SiO2 of polyfluoroparaxylene HT type obtained by DBC process;

[0031] Figure 7A is a picture of AlN Cu-clad plate covered by Al2O3 of polychloroparaxylene D type obtained by AMB process, Figure 7B is a picture of AlN Cu-clad plate covered by Al2O3 of polychloroparaxylene D type obtained by DBC process.

[0032] In all the drawings, the same reference numerals are used to denote the same elements or structures, in which:

[0033] 1 - power module body, 11 - substrate, 12 - device solder, 13 - power device, 14 - bonding wire, 15 - pin, 16 - substrate solder, 17 - backplane, 18 - silicone gel or epoxy resin, 19 - inorganic layer, 20 - Parylene layer; 2 - thermal interface material; 3 - heat sink. DETAILED DESCRIPTION

[0034] In order to make the objects, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not used to limit the present application. In addition, the technical features involved in each embodiment of the present application described below can be combined with each other as long as they do not conflict with each other.

[0035] Example 1

[0036] A silicone gel + inorganic layer high-temperature potting material for power devices, as shown in the schematic Figure 1 The preparation method is as follows:

[0037] Step one: Nusil R2188 is a polymer, curing agent two-component silicone gel. First, take the polymer and curing agent components in a mass ratio of 1:1, stir for 20 min to make them mix evenly. Then place the mixed silicone gel in a vacuum box to remove the bubbles in the silicone gel. Finally, fix the AlN copper-clad plate on the spin coater, and use the spin coating method to make the silicone gel evenly cover the AlN copper-clad plate. First, spin at 500 rpm / min for 8 s, then spin at 3000 rpm / min for 10 s. Get the AlN copper-clad plate covered with 1 mm thick silicone gel R2188.

[0038] Step two: Use the radio frequency magnetron sputtering method to prepare inorganic thin films SiO2 and Al2O3 respectively. Place the AlN copper-clad plate coated with silicone gel R2188 obtained in the previous step in the vacuum chamber of the magnetron sputtering instrument, and the target material is high-purity SiO2 target. After the sample to be plated and the target material are installed, start vacuumizing the chamber to make the vacuum degree less than 2.2 x 10 -4 Pa. The sputtering power is 80 W, the argon flow is 30 sccm, and the sputtering time is 1 hr, that is, the inorganic thin film SiO2 with a thickness of 5 μm is deposited on the AlN copper-clad plate coated with silicone gel R2188. Repeat the above steps, replace the target material with high-purity Al2O3 target, and the sputtering parameters are: sputtering power is 90 W, argon flow is 50 sccm, and sputtering time is 1 hr, that is, the inorganic thin film Al2O3 with a thickness of 3 μm is deposited on the AlN copper-clad plate coated with silicone gel R2188.

[0039] Step three: Place the R2188-SiO2-coated AlN copper-clad plate (Figure 4) and the R2188-Al2O3-coated AlN copper-clad plate obtained in steps one and two in a tube furnace for high-temperature reliability test, and the environmental atmosphere. Set the temperature of the tube furnace to 200℃, the heating rate to 10℃ / min, and the holding time to 24 hr.

[0040] As shown in Figure 4A and 4B , the color of the Cu on the surface of the R2188-SiO2-coated AlN copper-clad plate has not changed. Therefore, the encapsulation scheme of R2188 + inorganic layer is effective for the copper-clad plate at 200℃.

[0041] Example 2:

[0042] A high-temperature encapsulation material for power devices, as shown in the schematic Figure 2 , is prepared as follows:

[0043] Step one: The organic thin film polyfluorinated p-xylene VT4 type is prepared by CVD method. See Figure 3The preparation was carried out on a dedicated vacuum coating device. The detailed preparation steps are as follows: first, the solid dimer of polyfluoroparaxylene VT4 was placed in a vaporizer at 150°C to obtain dimer gas. Then, the dimer gas was converted into monomer gas at a temperature of 650°C. Finally, the AlN copper-clad plate was placed in a deposition chamber at room temperature. After the monomer radicals entered the deposition chamber, they deposited on the surface of the AlN copper-clad plate substrate to form a uniform and pinhole-free polyfluoroparaxylene VT4 film.

[0044] Step two: Inorganic thin films SiO2 and Al2O3 were prepared by radio frequency magnetron sputtering method. The AlN copper-clad plate coated with polyfluoroparaxylene VT4 organic thin film obtained in the previous step was placed in the vacuum chamber of the magnetron sputtering instrument, and the target material was also loaded. The target material was high-purity SiO2 target. After loading the sample to be plated and the target material, the chamber was evacuated to a vacuum degree of less than 2.4 x 10 -4 Pa. The sputtering power was 70 W, the argon flow rate was 20 sccm, and the sputtering time was 1.5 hr, i.e. the inorganic thin film SiO2 with a thickness of 4 μm was deposited on the AlN copper-clad plate coated with the organic thin film polyfluoroparaxylene VT4. The above steps were repeated, and the target material was replaced with high-purity Al2O3 target. The sputtering parameters were as follows: sputtering power was 90 W, argon flow rate was 50 sccm, and sputtering time was 2 hr, i.e. the inorganic thin film Al2O3 with a thickness of 7 μm was deposited on the AlN copper-clad plate coated with the organic thin film polyfluoroparaxylene VT4.

[0045] Step three: The polyfluoroparaxylene VT4-SiO2-coated AlN copper-clad plate and the polyfluoroparaxylene VT4-Al2O3-coated AlN copper-clad plate (Figure 5) obtained in steps one and two were placed in a tube furnace for high-temperature reliability test in an ambient atmosphere. The temperature of the tube furnace was set to 250°C, the heating rate was 10°C / min, and the holding time was 20 hr.

[0046] As shown in Figure 5A and 5B , the color of the Cu on the surface of the polyfluoroparaxylene VT4-Al2O3-coated AlN copper-clad plate did not change. Therefore, the polyfluoroparaxylene VT4 + inorganic layer potting scheme is effective for the copper-clad plate at 250°C.

[0047] Example 3:

[0048] A high-temperature potting material for power devices, as shown in the schematic Figure 2 , is prepared as follows:

[0049] Step one: Organic thin film of polyfluoroparaxylene HT was prepared by chemical vapor deposition (CVD). The detailed preparation steps are as follows: first, the solid dimer of polyfluoroparaxylene HT was placed in a vaporizer at 150°C to vaporize the solid dimer and obtain dimer gas. Then, the vapor was pyrolyzed at a temperature of 680°C, and the dimer became stable monomer radicals. Finally, the AlN copper-clad plate was placed in a deposition chamber at room temperature. After the monomer vapor entered the deposition chamber, it was deposited on the AlN copper-clad plate substrate to form a uniform and pinhole-free polyfluoroparaxylene HT film. The deposition thickness of polyfluoroparaxylene HT depends on the quality of the dimer and the deposition time. To obtain a 14 μm polyfluoroparaxylene HT layer, the amount of dimer required is 56 g, and the deposition time is 5 hr.

[0050] Step two: Inorganic thin films of SiO2 and Al2O3 were prepared by magnetron sputtering, respectively. The AlN copper-clad plate coated with polyfluoroparaxylene HT obtained in step one was placed in the vacuum chamber of the magnetron sputtering instrument, and the chamber was evacuated to a vacuum degree of less than 2.2 x 10 -4 Pa. A high-purity SiO2 target was used with a sputtering power of 80 W, an argon flow rate of 30 sccm, and a sputtering time of 1 hr, i.e., a 5 μm thick inorganic thin film of SiO2 was deposited on the AlN copper-clad plate coated with polyfluoroparaxylene HT. The AlN copper-clad plate coated with polyfluoroparaxylene HT obtained in step one was placed in the vacuum chamber of the magnetron sputtering instrument, and the chamber was evacuated to a vacuum degree of less than 2.2 x 10 -4 Pa. A high-purity Al2O3 target was used with a sputtering power of 100 W, an argon flow rate of 30 sccm, and a sputtering time of 2 hr, i.e., a 6 μm thick inorganic thin film of Al2O3 was deposited on the AlN copper-clad plate coated with polyfluoroparaxylene HT.

[0051] Step three: The polyfluoroparaxylene HT-SiO2-coated AlN copper-clad plate and the polyfluoroparaxylene HT-Al2O3-coated AlN copper-clad plate obtained in steps one and two were placed in a tube furnace for high-temperature reliability testing in an environmental atmosphere. The tube furnace was set to a temperature of 250°C, the heating rate was 10°C / min, and the holding time was 24 hr.

[0052] As shown in FIGS. 1 and 2, the color of the Cu on the surface of the polyfluoroparaxylene HT-SiO2-coated AlN copper-clad plate did not change. Therefore, the potting scheme of polyfluoroparaxylene HT + inorganic layer is effective for the copper-clad plate at 250°C. Figure 6A 6B As shown in FIGS. 1 and 2, the color of the Cu on the surface of the polyfluoroparaxylene HT-SiO2-coated AlN copper-clad plate did not change. Therefore, the potting scheme of polyfluoroparaxylene HT + inorganic layer is effective for the copper-clad plate at 250°C.

[0053] ​Therefore, the organic-inorganic superimposed potting material has superior protection effect on the AlN copper-clad plate at high temperature of 200℃ and 250℃, has good application prospect for wide bandgap semiconductor power devices, is beneficial to improve the electrical characteristics of the wide bandgap semiconductor power devices, and greatly prolongs the service life of the power devices.

[0054] Comparative Example 1

[0055] The comparative example was potting by the same method as Example 1, except that the mass ratio of the polymer and the curing agent in R2188 was 1:0.5.

[0056] The obtained R2188-SiO2-coated AlN copper-clad plate was placed in a tube furnace for high temperature reliability test. The tube furnace was set at a temperature of 200℃, the heating rate was 10℃ / min, and the holding time was 24hr. The obtained R2188 organic potting layer cracked, had poor mechanical properties, and caused the copper on the copper-clad plate to be oxidized and discolored.

[0057] Comparative Example 2

[0058] The comparative example was potting by the same method as Example 2, except that the organic thin film p-xylylene D was used in the comparative example.

[0059] The obtained p-xylylene D-Al2O3-coated AlN copper-clad plate was placed in a tube furnace for high temperature reliability test. The tube furnace was set at a temperature of 250℃, the heating rate was 10℃ / min, and the holding time was 20hr. As shown in FIGS. 2 and 3, the obtained copper-clad plate was severely oxidized and failed. Figure 7A and 7B

[0060] Those skilled in the art will readily understand that the above description is only preferred embodiments of the present application, and is not intended to limit the present application. Any modification, equivalent replacement and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.​

Claims

1. A multi-component organic-inorganic potting film, characterized in that, It includes an organic potting layer and an inorganic layer; the organic potting layer is a VT4 type polyfluorinated p-xylene layer or an HT type polyfluorinated p-xylene layer; the inorganic layer is an inorganic oxide layer, an inorganic nitride layer or a metal oxide layer; wherein the organic potting layer is capable of not decomposing in air at 200°C for at least 24 hours.

2. The multi-component organic-inorganic potting membrane as described in claim 1, characterized in that, The organic potting layer is able to remain intact for at least 20 hours at 250°C in air.

3. The multi-component organic-inorganic potting membrane as described in claim 1, characterized in that, The inorganic layer is SiO2, Al2O3 or SiN.

4. The multi-component organic-inorganic potting membrane as described in claim 1, characterized in that, The thickness of the polyfluorinated p-xylene layer is 14-20 μm, and the thickness of the inorganic layer is 10 nm-10 μm.

5. A method for preparing a multi-component organic-inorganic potting membrane according to any one of claims 1-4, characterized in that, Includes the following steps: An organic potting layer is formed by depositing a polyfluorinated p-xylene layer onto the substrate to be encapsulated using chemical vapor deposition; an inorganic layer is obtained by depositing inorganic oxides, inorganic nitrides or metal oxides on the surface of the organic potting layer.

6. A power device potting structure, characterized in that, The power device potting structure includes the multi-component organic-inorganic potting membrane as described in any one of claims 1-4.

7. A power device, characterized in that, The power device includes the power device potting structure as described in claim 6.

8. The power device as described in claim 7, characterized in that, The power devices include Si-based power devices, SiC-based power devices, or GaN-based power devices.

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