Pixel array, imaging element, and electronic device

Abstract

The present invention relates to a pixel array, an imaging element, and an electronic device. The pixel array includes: first, second, third, and fourth pixel sets arranged in a 2×2 matrix in a plan view, each of the first, second, third, and fourth pixel sets including four pixels, each of the pixels including two photoelectric conversion portions, the first and fourth pixel sets generating pixel signals corresponding to light in a first wavelength range, the second pixel set generating pixel signals corresponding to light in a second wavelength range, the third pixel set generating pixel signals corresponding to light in a third wavelength range, each of the photoelectric conversion portions of the four pixels in the first pixel set and each of the photoelectric conversion portions of the four pixels in the fourth pixel set being arranged in a first arrangement direction, and each of the photoelectric conversion portions of the four pixels in the second pixel set and each of the photoelectric conversion portions of the four pixels in the third pixel set being arranged in a second arrangement direction perpendicular to the first arrangement direction.

Description

[0001] This application is a divisional application of the patent application with the application number 201880074140.X, the application date of November 12, 2018, and the invention title of "Solid-state imaging element and electronic device". Technical Field

[0002] The present technology relates to a solid-state imaging element and an electronic device, and more particularly, to a solid-state imaging element and an electronic device configured to be capable of simultaneously obtaining a signal for generating a high-dynamic range image and a signal for detecting a phase difference. Background Art

[0003] A solid-state imaging element has been proposed that realizes simultaneous acquisition of two pixel signals, namely, a high-sensitivity signal and a low-sensitivity signal for generating a high-dynamic range image (hereinafter also referred to as an HDR image), and a phase difference detection signal for distance measurement (for example, see Patent Document 1).

[0004] Citation List

[0005] Patent Document

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2016-171308 Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] In the pixel structure of Patent Document 1, three photodiodes are formed under one on-chip lens. If the curvature of the on-chip lens is increased specifically for phase difference characteristics to increase the refractive power and improve the angular dependence, it becomes difficult to generate an HDR image. On the contrary, if the curvature of the on-chip lens is decreased specifically for the favorable generation of an HDR image to decrease the refractive power and reduce the angular dependence, the separation of the phase difference characteristics deteriorates. Therefore, it is difficult to simultaneously achieve phase difference characteristics and HDR characteristics. A lens structure in which the curvature of one on-chip lens is changed has also been proposed, but this lens structure is sensitive to shape changes, so it is difficult to mass-produce.

[0009] The present technology has been made in view of this situation, and the present technology aims to be capable of simultaneously obtaining a signal for generating a high-dynamic range image and a signal for detecting a phase difference.

[0010] Technical Solution for Solving the Problem

[0011] The solid-state imaging element according to the first aspect of the present technology includes a plurality of pixel sets corresponding to a plurality of colors, each of the pixel sets including a plurality of pixels having color filters of the same color, and each of the pixels including a plurality of photoelectric conversion portions.

[0012] An electronic device according to a second aspect of the present technology includes a solid-state imaging element, the solid-state imaging element including a plurality of pixel sets corresponding to a plurality of colors, each of the pixel sets including a plurality of pixels having color filters of the same color, and each of the pixels including a plurality of photoelectric conversion portions.

[0013] In the first aspect and the second aspect of the present technology, a plurality of pixel sets are provided corresponding to a plurality of colors, each of the pixel sets being provided with a plurality of pixels having color filters of the same color, and each of the pixels being provided with a plurality of photoelectric conversion portions.

[0014] The solid-state imaging element and the electronic device may be independent devices, or may be modules incorporated into other devices.

[0015] Effects of the present invention

[0016] According to the first aspect and the second aspect of the present technology, signals for generating a high-dynamic-range image and signals for detecting a phase difference can be obtained simultaneously.

[0017] It should be noted that the effects described here are not necessarily restrictive and may include any effects described in the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a diagram illustrating a schematic configuration of a solid-state imaging element to which the present technology is applied.

[0019] Figure 2 is a diagram illustrating Figure 1 a first cross-sectional configuration example of a pixel array of the solid-state imaging element in

[0020] Figure 3 is a diagram illustrating a color array of color filters.

[0021] Figure 4 is a diagram illustrating a circuit configuration of a pixel set.

[0022] Figure 5 is a diagram illustrating a configuration of signal lines for controlling transfer transistors of a pixel set.

[0023] Figure 6 is a diagram illustrating driving in a case where the solid-state imaging element operates in a full-resolution mode.

[0024] Figure 7 is a diagram illustrating a modification example of the full-resolution mode.

[0025] Figure 8 is a diagram illustrating driving in a case where the solid-state imaging element operates in a four-pixel addition phase difference detection mode.

[0026] Figure 9It is a diagram illustrating the driving when the solid-state imaging device operates in the first phase-difference HDR mode.

[0027] Figure 10 It is a diagram illustrating the process of reading pixel signals in the first phase-difference HDR mode.

[0028] Figure 11 It is a diagram illustrating the driving when the solid-state imaging device operates in the second phase-difference HDR mode.

[0029] Figure 12 It is a diagram illustrating the process of reading pixel signals in the second phase-difference HDR mode.

[0030] Figure 13 It is a diagram illustrating an example of the wiring of signal lines dedicated to the first phase-difference HDR mode.

[0031] Figure 14 It is a diagram illustrating an example of the wiring of signal lines dedicated to the second phase-difference HDR mode.

[0032] Figure 15 It is a diagram illustrating a modified example of the color array of the color filter.

[0033] Figure 16 It is a diagram illustrating a modified example of the arrangement direction of the photodiode PD.

[0034] Figure 17 It is a diagram illustrating a modified example of the arrangement of the on-chip lens.

[0035] Figure 18 It is a diagram illustrating Figure 1 an example of the second cross-sectional structure of the pixel array of the solid-state imaging device in

[0036] Figure 19 It is a diagram illustrating the region where an insulating layer is formed in Figure 18 a plan view of the region.

[0037] Figure 20 It is a diagram illustrating Figure 1 an example of the third cross-sectional structure of the pixel array of the solid-state imaging device in

[0038] Figure 21 It is a diagram illustrating the region where an insulating layer and an impurity layer are formed in Figure 18 a plan view of the region.

[0039] Figure 22 It is a diagram illustrating Figure 21 the potential of the impurity layer in

[0040] Figure 23 It is a diagram illustrating Figure 20A diagram of a modification of the third cross-sectional structure example in

[0041] Figure 24 It is a plan view showing a first structure in which a light-shielding film is disposed on a photodiode PD.

[0042] Figure 25 It is a plan view showing a second structure in which a light-shielding film is disposed on a photodiode PD.

[0043] Figure 26 It is a plan view showing a third structure in which a light-shielding film is disposed on a photodiode PD.

[0044] Figure 27 It is a plan view showing a fourth structure in which a light-shielding film is disposed on a photodiode PD.

[0045] Figure 28 It is a diagram showing Figure 1 Another modification example of the solid-state imaging device in

[0046] Figure 29 It is a diagram showing Figure 1 Another modification example of the solid-state imaging device in

[0047] Figure 30 It is a plan view showing an example of the arrangement of pixel transistors.

[0048] Figure 31 It is a block diagram showing an example of the structure of an imaging device as an electronic device to which the present technology is applied.

[0049] Figure 32 It is a diagram showing an example of the use of an image sensor.

[0050] Figure 33 It is a diagram showing an example of the schematic structure of an endoscopic surgery system.

[0051] Figure 34 It is a block diagram showing an example of the functional structure of a camera and a CCU.

[0052] Figure 35 It is a block diagram showing an example of the schematic structure of a vehicle control system.

[0053] Figure 36 It is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit. Detailed Description of the Invention

[0054] Hereinafter, the modes for implementing the present technology (hereinafter referred to as embodiments) will be described. It should be noted that the description will be made in the following order.

[0055] 1. Schematic structural example of a solid-state imaging device

[0056] 2. First cross-sectional structural example of a pixel

[0057] 3. Arrangement example of color filters

[0058] 4. Circuit structural example of a pixel set

[0059] 5. Explanation of output modes

[0060] 6. Variation example of the color array of color filters

[0061] 7. Variation example of the arrangement direction of photodiodes

[0062] 8. Variation example of the arrangement of on-chip lenses

[0063] 9. Second cross-sectional structural example of a pixel

[0064] 10. Third cross-sectional structural example of a pixel

[0065] 11. Structural example of adding a light-shielding film

[0066] 12. Other variation examples

[0067] 13. Arrangement example of pixel transistors

[0068] 14. Application example of an electronic device

[0069] 15. Application example of an endoscopic surgical system

[0070] 16. Application example of a moving body

[0071] <1. Schematic structural example of a solid-state imaging device>

[0072] Figure 1 The schematic structure of a solid-state imaging device to which this technology is applied is illustrated.

[0073] Figure 1 The solid-state imaging device 1 includes a pixel array 3 on a semiconductor substrate 12 using, for example, silicon (Si) as a semiconductor, and peripheral circuits around the pixel array 3. The pixel array 3 has pixels 2 arranged two-dimensionally in a matrix form. The peripheral circuits include a vertical drive circuit 4, a column signal processing circuit 5, a horizontal drive circuit 6, an output circuit 7, a control circuit 8, etc.

[0074] Each pixel 2 includes a photodiode as a photoelectric conversion section and a plurality of pixel transistors. Note that, as will be referred to later Figure 4As described above, the pixel 2 is formed with a shared pixel structure. Among them, a floating diffusion section, which is a charge holding section for holding the charge generated in the photodiode, is shared among a plurality of pixels 2. In the shared pixel structure, a photodiode and a transfer transistor are provided for each pixel, and a selection transistor, a reset transistor, and an amplification transistor are shared among the plurality of pixels.

[0075] The control circuit 8 receives an input clock and data indicating an operation mode and the like, and outputs data such as internal information of the solid-state imaging device 1. Specifically, the control circuit 8 generates a clock signal and a control signal based on a vertical synchronization signal, a horizontal synchronization signal, and a master clock, and the vertical drive circuit 4, the column signal processing circuit 5, the horizontal drive circuit 6, etc. operate based on the clock signal and the control signal. Then, the control circuit 8 outputs the generated clock signal and control signal to the vertical drive circuit 4, the column signal processing circuit 5, the horizontal drive circuit 6, etc.

[0076] The vertical drive circuit 4 is formed of, for example, a shift register, and the vertical drive circuit 4 selects a predetermined pixel drive line 10, supplies a pulse for driving the pixel 2 to the selected pixel drive line 10, and drives the pixel 2 row by row. That is, the vertical drive circuit 4 controls to selectively scan the pixels 2 of the pixel array 3 row by row in the vertical direction, and outputs a pixel signal based on the signal charge corresponding to the received light amount generated in the photoelectric conversion section of the pixel 2 to the column signal processing circuit 5 through the vertical signal line 9.

[0077] The column signal processing circuit 5 is arranged for the corresponding column of the pixel 2, and performs signal processing such as noise cancellation on the signals output from the pixels 2 in one row for the corresponding pixel column. For example, the column signal processing circuit 5 performs signal processing such as correlated double sampling (CDS: Correlated Double Sampling) for eliminating fixed pattern noise peculiar to pixels and AD conversion.

[0078] The horizontal drive circuit 6 is formed of, for example, a shift register, sequentially selects each column signal processing circuit 5 by sequentially outputting horizontal scan pulses, and causes each column signal processing circuit 5 to output a pixel signal to the horizontal signal line 11.

[0079] The output circuit 7 performs predetermined signal processing on the signals sequentially supplied from each column signal processing circuit 5 through the horizontal signal line 11, and outputs the signals. For example, the output circuit 7 can only perform buffering, or can perform various digital signal processing such as black level adjustment and column change correction. The input / output terminal 13 exchanges signals with the outside.

[0080] The solid-state imaging device 1 formed as described above is a CMOS image sensor called a column AD system, in which column signal processing circuits 5 for performing CDS processing and AD conversion processing are arranged for corresponding pixel columns.

[0081] In addition, the solid-state imaging device 1 can be formed of a chip having a stacked structure in which a plurality of substrates are stacked. A chip having a plurality of substrates stacked is formed by sequentially stacking a lower substrate and an upper substrate from bottom to top. At least one or more of the control circuit 8, the vertical drive circuit 4, the column signal processing circuit 5, the horizontal drive circuit 6, and the output circuit 7 are formed on the lower substrate, and at least the pixel array 3 is formed on the upper substrate. A connection portion connects the vertical drive circuit 4 to the pixel array 3 and connects the column signal processing circuit 5 to the pixel array 3 to transmit signals between the lower substrate and the upper substrate. The connection portion is formed, for example, by a through-silicon via (TSV) or Cu-Cu.

[0082] <2. First cross-sectional structure example of pixel>

[0083] Figure 2 illustrates Figure 1 a first cross-sectional structure example of the pixel array 3 of the solid-state imaging device 1 in

[0084] In the pixel array 3 of the solid-state imaging device 1, a photodiode PD is formed by forming an N-type (second conductivity type) semiconductor region 32 in a P-type (first conductivity type) semiconductor region 31 of a semiconductor substrate 12, for example. In each pixel 2 of the pixel array 3, two photodiodes PD are formed in each pixel, and the two photodiodes PD are formed in a symmetrically arranged manner in two parts into which the pixel region is equally divided. Note that in the following description, among the two photodiodes PD formed in one pixel, the photodiode PD arranged on the right side in the figure is sometimes referred to as the right photodiode PD, and the photodiode PD arranged on the left side is referred to as the left photodiode PD.

[0085] On the front side ( Figure 2 the lower side in

[0086] of the semiconductor substrate 12, a multilayer wiring layer 35, a plurality of wiring layers 33, and an interlayer dielectric 34 are formed. The multilayer wiring layer 35 includes a pixel transistor (not shown) for reading charges generated and accumulated in the photodiodes PD of the respective pixels 2, etc. Figure 2On the pixel boundary portion on the upper side (in the above), an inter-pixel light-shielding film 36 is formed. The inter-pixel light-shielding film 36 can be any material that can block light, and it is desirable to be a material with high light-shielding property and can be processed with high precision through fine processing such as etching. For example, the inter-pixel light-shielding film 36 can be formed of a metal film such as tungsten (W), aluminum (Al), copper (Cu), titanium (Ti), molybdenum (Mo), or nickel (Ni).

[0087] In addition, for example, an antireflection film (insulating layer) formed of, for example, a silicon oxide film or the like can be further formed on the interface on the back side of the semiconductor substrate 12.

[0088] On the back surface of the semiconductor substrate 12 including the inter-pixel light-shielding film 36, a color filter 37 is formed. For example, the color filter 37 is formed by spin-coating a photosensitive resin containing a coloring substance such as a pigment or a dye. The color array of the color filter 37 will be described later with reference to Figure 3 The red (R), green (G), and blue (B) are arranged in a Bayer array in units of 4 pixels in a 2×2 (two rows and two columns) form.

[0089] On the color filter 37, an on-chip lens 38 is formed for each pixel. The on-chip lens 38 is formed of a resin material such as styrene resin, acrylic resin, styrene-acrylic copolymer resin, or silicone resin, for example.

[0090] As described above, the solid-state imaging device 1 is a back-illuminated CMOS solid-state imaging device in which the color filter 37 and the on-chip lens 38 are formed on the back side of the semiconductor substrate 12 opposite to the front side where the multilayer wiring layer 35 is formed so that light enters from the back side.

[0091] Each pixel 2 of the solid-state imaging device 1 has two separate photodiodes PD in the pixel. The two photodiodes PD are formed at different positions so that an offset occurs between the images generated by the two photodiodes PD respectively. Based on this image offset, the phase shift amount is calculated to calculate the defocus amount. By adjusting (moving) the imaging lens, autofocus can be achieved.

[0092] <3. Arrangement Example of Color Filter>

[0093] Next, the color array of the color filter 37 in the pixel array 3 will be described with reference to Figure 3 The color array of the color filter 37 in the pixel array 3 will be described.

[0094] In a pixel array 3 having pixels 2 arranged two-dimensionally in a matrix form, four pixels 2 in the form of 2×2 (2 vertical pixels × 2 horizontal pixels) form a pixel set 51. In each individual pixel set 51, color filters 37 are arranged in the same color. More specifically, R, G, and B color filters 37 are arranged in a Bayer array in units of pixel sets 51.

[0095] In Figure 3 , the pixel set 51 having an R color filter 37 is represented by pixel set 51R, and the pixel set 51 adjacent to pixel set 51R and having a G color filter 37 is represented by pixel set 51Gr. In addition, the pixel set 51 having a B color filter 37 is represented by pixel set 51B, and the pixel set 51 adjacent to pixel set 51B and having a G color filter 37 is represented by pixel set 51Gb. Note that the configuration of the color filters is not limited to RGB primary color filters, and various configurations including complementary color filters such as cyan, magenta, yellow, and green (CMYG) can be applied.

[0096] In addition, in pixel set 51, the arrangement directions of the longitudinal shapes of the two photodiodes PD formed in each pixel 2 are in the same direction, and in all pixel sets 51, the longitudinal shapes of the photodiodes PD are formed in the same direction.

[0097] An on-chip lens 38 is formed for each pixel.

[0098] <4. Circuit configuration example of pixel set>

[0099] Next, Figure 4 is a diagram illustrating the circuit configuration of pixel set 51.

[0100] Figure 4 Illustrates the circuit configuration of pixel set 51Gr as an example of pixel set 51.

[0101] Each pixel 2 of pixel set 51Gr includes two photodiodes PD and two transfer transistors TG for transferring the charge accumulated in the photodiodes PD. One FD 52, one reset transistor 53, one amplification transistor 54, and one selection transistor 55 are provided for pixel set 51Gr. Each of the reset transistor 53, amplification transistor 54, and selection transistor 55 is shared by the four pixels of pixel set 51Gr. The four pixels sharing the reset transistor 53, amplification transistor 54, and selection transistor 55 form a shared unit.

[0102] Note that hereinafter, in the case of distinguishing the two photodiodes PD and the two transfer transistors TG of each pixel 2 in the pixel set 51Gr from each other, among the four pixels in the form of 2×2 that constitute the pixel set 51Gr, the two photodiodes PD of the upper-left pixel 2 are referred to as photodiodes PD_Gr1L and PD_Gr1R, and the two transfer transistors TG for transferring the charges accumulated in the photodiodes PD_Gr1L and PD_Gr1R are referred to as transfer transistors TG_Gr1L and TG_Gr1R.

[0103] In addition, the two photodiodes PD of the upper-right pixel 2 are referred to as photodiodes PD_Gr2L and PD_Gr2R, and the two transfer transistors TG for transferring the charges accumulated in the photodiodes PD_Gr2L and PD_Gr2R are referred to as transfer transistors TG_Gr2L and TG_Gr2R.

[0104] Similarly, the two photodiodes PD of the lower-left pixel 2 are referred to as photodiodes PD_Gr3L and PD_Gr3R, and the two transfer transistors TG for transferring the charges accumulated in the photodiodes PD_Gr3L and PD_Gr3R are referred to as transfer transistors TG_Gr3L and TG_Gr3R. The two photodiodes PD of the lower-right pixel 2 are referred to as photodiodes PD_Gr4L and PD_Gr4R, and the two transfer transistors TG for transferring the charges accumulated in the photodiodes PD_Gr4L and PD_Gr4R are referred to as transfer transistors TG_Gr4L and TG_Gr4R.

[0105] Each photodiode PD of each pixel 2 in the pixel set 51Gr receives light, and generates and accumulates optical charges.

[0106] When the drive signal TRGGr1L supplied to the gate electrode becomes effective, the transfer transistor TG_Gr1L becomes conductive in response thereto, and thus transfers the optical charges accumulated in the photodiode PD_Gr1L to the FD 52. When the drive signal TRGGr1R supplied to the gate electrode becomes effective, the transfer transistor TG_Gr1R becomes conductive in response thereto, and thus transfers the optical charges accumulated in the photodiode PD_Gr1R to the FD 52.

[0107] When the driving signal TRGGr2L supplied to the gate electrode becomes valid, the transfer transistor TG_Gr2L turns on in response thereto, thereby transferring the optical charges accumulated in the photodiode PD_Gr2L to the FD 52. When the driving signal TRGGr2R supplied to the gate electrode becomes valid, the transfer transistor TG_Gr2R turns on in response thereto, thereby transferring the optical charges accumulated in the photodiode PD_Gr2R to the FD 52. The same applies to the photodiodes PD_Gr3L, PD_Gr3R, PD_Gr4L, and PD_Gr4R and the transfer transistors TG_Gr3L, TG_Gr3R, TG_Gr4L, and TG_Gr4R.

[0108] The FD 52 temporarily holds the optical charges provided from the respective photodiodes PD of the respective pixels 2 in the pixel set 51Gr.

[0109] When the driving signal RST supplied to the gate electrode becomes valid, the reset transistor 53 turns on in response thereto, thereby resetting the potential of the FD 52 to a predetermined level (reset voltage VDD).

[0110] The amplifying transistor 54 has a source electrode connected to the vertical signal line 9 via the selection transistor 55, thereby forming a source follower circuit together with the load MOS of the constant current source circuit 56, and the constant current source circuit 56 is connected to one end of the vertical signal line 9.

[0111] The selection transistor 55 is connected between the source electrode of the amplifying transistor 54 and the vertical signal line 9. When the selection signal SEL supplied to the gate electrode becomes valid, the selection transistor 55 turns on in response thereto, thereby bringing the common unit into a selection state and outputting the pixel signal of the pixel 2 in the common unit output from the amplifying transistor 54 to the vertical signal line 9. It should be noted that for the pixel set 51 ( Figure 4 the pixel set 51Gr in), it can be set as shown in Figure 4 One selection transistor 55, or at least two selection transistors 55 can be provided. In the case where at least two selection transistors 55 are provided for the pixel set 51, the at least two selection transistors 55 are connected to different vertical signal lines 9 so that the pixel signals can be read at a higher speed.

[0112] The transfer transistor TG, the reset transistor 53, the amplifying transistor 54, and the selection transistor 55 of the pixel 2 are controlled by the vertical driving circuit 4.

[0113] Figure 5 The figure shows the configuration of the signal line for supplying the driving signal TRGGr to the gate electrodes of the eight transfer transistors TG constituting the pixel set 51 as shown in Figure 4 the figure.

[0114] In order to supply the driving signal TRGGr to the gate electrodes of the eight transfer transistors TG that make up the pixel set 51Gr, as Figure 5 shown, a plurality of pixel sets 51 arranged in the horizontal direction require eight signal lines 61-1 to 61-8. The eight signal lines 61-1 to 61-8 are Figure 1 a part of the pixel driving line 10 in

[0115] The signal line 61-1 transmits the driving signal TRGGr1L to be supplied to the gate electrode of the transfer transistor TG_Gr1L in the pixel set 51Gr. In addition, the signal line 61-1 also transmits the driving signal TRGGr1L to the gate electrode of the transfer transistor TG_R1L (not shown) in the pixel set 51R adjacent to the pixel set 51Gr. The position of the transfer transistor TG_R1L in the pixel set 51R is the same as the position of the transfer transistor TG_Gr1L in the pixel set 51Gr.

[0116] The signal line 61-2 transmits the driving signal TRGGr1R to be supplied to the gate electrode of the transfer transistor TG_Gr1R in the pixel set 51Gr. In addition, the signal line 61-2 also transmits the driving signal TRGGr1R to the gate electrode of the transfer transistor TG_R1R (not shown) in the pixel set 51R adjacent to the pixel set 51Gr. The position of the transfer transistor TG_R1R in the pixel set 51R is the same as the position of the transfer transistor TG_Gr1R in the pixel set 51Gr.

[0117] The signal line 61-3 transmits the driving signal TRGGr2L to be supplied to the gate electrode of the transfer transistor TG_Gr2L in the pixel set 51Gr. In addition, the signal line 61-3 also transmits the driving signal TRGGr2L to the gate electrode of the transfer transistor TG_R2L (not shown) in the pixel set 51R adjacent to the pixel set 51Gr. The position of the transfer transistor TG_R2L in the pixel set 51R is the same as the position of the transfer transistor TG_Gr2L in the pixel set 51Gr.

[0118] The signal line 61-4 transmits the driving signal TRGGr2R to be supplied to the gate electrode of the transfer transistor TG_Gr2R in the pixel set 51Gr. In addition, the signal line 61-4 also transmits the driving signal TRGGr2R to the gate electrode of the transfer transistor TG_R2R (not shown) in the pixel set 51R adjacent to the pixel set 51Gr. The position of the transfer transistor TG_R2R in the pixel set 51R is the same as the position of the transfer transistor TG_Gr2R in the pixel set 51Gr.

[0119] Signal line 61-5 transmits the drive signal TRGGr3L to be supplied to the gate electrode of the transfer transistor TG_Gr3L in pixel set 51Gr. In addition, signal line 61-5 also transmits the drive signal TRGGr3L to the gate electrode of the transfer transistor TG_R3L (not shown) in pixel set 51R adjacent to pixel set 51Gr, and the position of transfer transistor TG_R3L in pixel set 51R is the same as that of transfer transistor TG_Gr3L in pixel set 51Gr.

[0120] Signal line 61-6 transmits the drive signal TRGGr3R to be supplied to the gate electrode of the transfer transistor TG_Gr3R in pixel set 51Gr. In addition, signal line 61-6 also transmits the drive signal TRGGr3R to the gate electrode of the transfer transistor TG_R3R (not shown) in pixel set 51R adjacent to pixel set 51Gr, and the position of transfer transistor TG_R3R in pixel set 51R is the same as that of transfer transistor TG_Gr3R in pixel set 51Gr.

[0121] Signal line 61-7 transmits the drive signal TRGGr4L to be supplied to the gate electrode of the transfer transistor TG_Gr4L in pixel set 51Gr. In addition, signal line 61-7 also transmits the drive signal TRGGr4L to the gate electrode of the transfer transistor TG_R4L (not shown) in pixel set 51R adjacent to pixel set 51Gr, and the position of transfer transistor TG_R4L in pixel set 51R is the same as that of transfer transistor TG_Gr4L in pixel set 51Gr.

[0122] Signal line 61-8 transmits the drive signal TRGGr4R to be supplied to the gate electrode of the transfer transistor TG_Gr4R in pixel set 51Gr. In addition, signal line 61-8 also transmits the drive signal TRGGr4R to the gate electrode of the transfer transistor TG_R4R (not shown) in pixel set 51R adjacent to pixel set 51Gr, and the position of transfer transistor TG_R4R in pixel set 51R is the same as that of transfer transistor TG_Gr4R in pixel set 51Gr.

[0123] Similarly, pixel sets 51B and 51Gb arranged in the horizontal direction require eight signal lines 62-1 to 62-8.

[0124] Signal line 62-1 transmits the drive signal TRGGb1L to the gate electrode of the transfer transistor TG corresponding to the transfer transistor TG_Gr1L in pixel set 51Gr in pixel sets 51B and 51Gb.

[0125] The signal line 62-2 transmits the driving signal TRGGb1R to the gate electrodes of the transfer transistors TG in pixel sets 51B and 51Gb corresponding to the transfer transistor TG_Gr1R in pixel set 51Gr.

[0126] The signal line 62-3 transmits the driving signal TRGGb2L to the gate electrodes of the transfer transistors TG in pixel sets 51B and 51Gb corresponding to the transfer transistor TG_Gr2L in pixel set 51Gr.

[0127] The signal line 62-4 transmits the driving signal TRGGb2R to the gate electrodes of the transfer transistors TG in pixel sets 51B and 51Gb corresponding to the transfer transistor TG_Gr2R in pixel set 51Gr.

[0128] The signal line 62-5 transmits the driving signal TRGGb3L to the gate electrodes of the transfer transistors TG in pixel sets 51B and 51Gb corresponding to the transfer transistor TG_Gr3L in pixel set 51Gr.

[0129] The signal line 62-6 transmits the driving signal TRGGb3R to the gate electrodes of the transfer transistors TG in pixel sets 51B and 51Gb corresponding to the transfer transistor TG_Gr3R in pixel set 51Gr.

[0130] The signal line 62-7 transmits the driving signal TRGGb4L to the gate electrodes of the transfer transistors TG in pixel sets 51B and 51Gb corresponding to the transfer transistor TG_Gr4L in pixel set 51Gr.

[0131] The signal line 62-8 transmits the driving signal TRGGb4R to the gate electrodes of the transfer transistors TG in pixel sets 51B and 51Gb corresponding to the transfer transistor TG_Gr4R in pixel set 51Gr.

[0132] By forming the circuits of multiple pixels 2 in the common unit as described above, in response to the driving signal from the vertical driving circuit 4, the pixels 2 in the common unit can output pixel signals in units of respective photodiodes PD, and can also output pixel signals in units of respective pixels or in units of multiple pixels. In the case of outputting pixel signals in units of respective pixels or in units of multiple pixels, multiple simultaneously output transfer transistors TG are simultaneously activated. The FD 52 adds up the charges provided from multiple photodiodes PD via the simultaneously activated transfer transistors TG. Therefore, the pixel signals in units of respective pixels or in units of multiple pixels are output from the FD 52 to the column signal processing circuit 5 through the amplifying transistor 54 and the selection transistor 55.

[0133] It should be noted that although Figure 4 and Figure 5Illustrated is a circuit example in which four pixels in a 2×2 form that constitute pixel set 51 share a unit, but the combination of multiple pixels as the shared unit is not limited to this. For example, two pixels in a 1×2 (1 vertical pixel × 2 horizontal pixels) form or a 2×1 (2 vertical pixels × 1 horizontal pixel) form can be the shared unit, or four pixels in a 4×1 (4 vertical pixels × 1 horizontal pixel) form can be the shared unit.

[0134] <5. Description of Output Modes>

[0135] <5.1 Full-Resolution Mode>

[0136] Next, multiple output modes that can be performed by solid-state imaging device 1 will be described.

[0137] First, the full-resolution mode will be described as follows: in which, pixel signals generated in all photodiodes PD of pixel array 3 are respectively output.

[0138] Figure 6 is a diagram illustrating the driving (pixel signal output control) of pixel set 51Gr when solid-state imaging device 1 operates in the full-resolution mode.

[0139] Figure 6 The hatched photodiodes PD indicate the photodiodes PD selected to output pixel signals. In the full-resolution mode, as Figure 6 shown, eight photodiodes PD in pixel set 51Gr are sequentially selected, and the pixel signals respectively generated by the eight photodiodes PD are respectively output.

[0140] In Figure 6 the example, the selection order of the eight photodiodes PD is the order of photodiodes PD_Gr1L, PD_Gr1R, PD_Gr2L, PD_Gr2R, PD_Gr3L, PD_Gr3R, PD_Gr4L, and PD_Gr4R. This order is not limited to this.

[0141] In the full-resolution mode, by combining the pixel signals of two photodiodes PD in the same pixel, the pixel signal of one pixel can be obtained, and by comparing the pixel signals of two photodiodes PD in the same pixel, the phase difference can be detected. The other pixel sets 51Gb, 51R, and 51B perform operations similar to those of pixel set 51Gr in Figure 6 .

[0142] Therefore, in the full-resolution mode, all pixels 2 can output signals in units of each pixel, and signals for detecting the phase difference can be output.

[0143] In addition, in solid-state imaging device 1, although asFigure 3 As shown, the color filters 37 for R, G, or B are arranged in units of four pixels (in units of pixel sets 51), but the full-resolution mode also allows a re-mosaicing process to regenerate and output pixel signals in the Bayer array of R, G, and B in units of pixels.

[0144] It should be noted that in the full-resolution mode of driving in Figure 6 , the frame rate is reduced and the power consumption increases. Therefore, it is possible to perform driving in which phase difference detection is not performed for some of the pixels 2 in the pixel set 51Gr.

[0145] For example, as Figure 7 shown, for the upper-right pixel 2 and the lower-left pixel 2 among the four pixels that make up the pixel set 51Gr, the solid-state imaging device 1 drives the two photodiodes PD in this pixel to simultaneously read this pixel. Similarly, in Figure 7 , the hatched photodiodes PD indicate the photodiodes PD selected to output pixel signals.

[0146] The pixel signals of the photodiodes PD_Gr1L and PD_Gr1R of the upper-left pixel 2 and the photodiodes PD_Gr4L and PD_Gr4R of the lower-right pixel 2 are used to detect the phase difference. Therefore, by reducing the number of pixels 2 for detecting the phase difference, the frame rate can be increased and the power consumption can be improved. Alternatively, the pixels 2 for which the phase difference can be detected can be changed according to the difference in the amount of received light. For example, in low illuminance, the driving in which phase difference detection is performed for all pixels in Figure 6 is performed, while in high illuminance, the driving in which some pixels 2 are not included in Figure 7 is performed.

[0147] Although Figure 7 is an example in which phase difference detection is performed for two pixels among the four pixels that make up the pixel set 51Gr, it is possible to perform driving in which phase difference detection is performed for only one pixel.

[0148] <5.2 Four-Pixel Summation Phase Difference Detection Mode>

[0149] Next, the four-pixel summation phase difference detection mode will be described.

[0150] The solid-state imaging device 1 can perform the following four-pixel summation phase difference detection mode: in each pixel set 51 as a common unit, that is, in units of four pixels in a 2×2 form, the pixel signals are added and output, and the phase difference is detected on the entire surface of the pixel array 3.

[0151] Figure 8 is a diagram illustrating the driving in the four-pixel summation phase difference detection mode.

[0152] Similarly, in Figure 8 the shaded photodiode PD represents the photodiode PD selected to output the pixel signal.

[0153] In the four-pixel addition phase difference detection mode, the solid-state imaging device 1 adds and outputs the pixel signals of the photodiodes PD located at the same position in the pixels of the pixel set 51 among the pair of photodiodes PD of pixel 2. For example, as shown in A of Figure 8 , the solid-state imaging device 1 first adds and outputs the pixel signals of all the left photodiodes PD in the pixel set 51, and then, as shown in B of Figure 8 , adds and outputs the pixel signals of all the right photodiodes PD in the pixel set 51. It should be noted that the reading order of the left photodiode PD and the right photodiode PD can be reversed.

[0154] By performing such driving, the phase difference can be detected based on the pixel signals of the left photodiode PD and the right photodiode PD in each individual pixel set 51 being read, and by combining the two pixel signals, the pixel signal output of each individual pixel set 51 (in units of 4 pixels) can be obtained. In other words, the phase difference of the entire surface can be detected while maintaining the advantage of the dynamic range caused by the increase in the pixel capacitance Qs.

[0155] As a method for discriminately reading the pixel signals of the left photodiode PD and the right photodiode PD, two methods can be adopted: a first reading method of separately reading the pixel signals of the left photodiode PD and the right photodiode PD; and a second reading method of reading the signal obtained by adding the pixel signals of the left photodiode PD and the right photodiode PD.

[0156] The first reading method and the second reading method will be briefly described.

[0157] First, the first reading method will be described.

[0158] First, while the left photodiode PD and the right photodiode PD receive light (exposure), a dark level signal for performing correlated double sampling is obtained.

[0159] After a predetermined exposure time, the solid-state imaging device 1 first reads the pixel signals of one of the left photodiode PD group and the right photodiode PD group in the pixel set 51, for example, the pixel signals of the left photodiode PD group.

[0160] For example, it will be in Figure 4Taking the pixel set 51Gr shown as an example, the reading of the pixel signals of the left photodiode PD group will be described. After activating the selection transistor 55, the transfer transistors TG_Gr1L, TG_Gr2L, TG_Gr3L, and TG_Gr4L are activated to transfer the charges accumulated in the photodiodes PD_Gr1L, PD_Gr2L, PD_Gr3L, and PD_Gr4L to the FD 52, so that the voltage signal corresponding to the accumulated charge in the FD 52 is output to the column signal processing circuit 5 through the vertical signal line 9.

[0161] The voltage signal output to the column signal processing circuit 5 is the sum of the pixel signal of the left photodiode PD group and the dark level signal. Therefore, the pixel signal of the left photodiode PD group is obtained by subtracting the dark level signal from the voltage signal of the column signal processing circuit 5.

[0162] Next, the solid-state imaging device 1 turns on the reset transistor 53 to reset the accumulated charge in the FD 52, and then reads the pixel signal of the other one of the left photodiode PD group and the right photodiode PD group of the pixel set 51, for example, the pixel signal of the right photodiode PD group. In Figure 4 the example of the pixel set 51Gr shown, after activating the selection transistor 55, the transfer transistors TG_Gr1R, TG_Gr2R, TG_Gr3R, and TG_Gr4R are activated to transfer the charges accumulated in the photodiodes PD_Gr1R, PD_Gr2R, PD_Gr3R, and PD_Gr4 to the FD 52, so that the voltage signal corresponding to the accumulated charge in the FD 52 is output to the column signal processing circuit 5 through the vertical signal line 9.

[0163] The voltage signal output to the column signal processing circuit 5 is the sum of the pixel signal of the right photodiode PD group and the dark level signal. Therefore, the pixel signal of the right photodiode PD group is obtained by subtracting the dark level signal from the voltage signal of the column signal processing circuit 5.

[0164] In the first reading method, the pixel signals of the left photodiode PD and the right photodiode PD are read separately so that the phase difference signal can be directly obtained. This allows for obtaining a high-quality signal for distance measurement. On the other hand, the signal for taking a photographed image can be obtained by digitally adding the signals of the left photodiode PD and the right photodiode PD.

[0165] Next, the second reading method will be described.

[0166] The second reading method is the same as the first reading method until the dark level signal is obtained and the pixel signal of one of the left photodiode PD group and the right photodiode PD group of the pixel set 51 (the pixel signal of the left photodiode PD group) is obtained.

[0167] After obtaining the pixel signal of one of the left photodiode PD groups and the right photodiode PD groups, different from the first reading method, the solid-state imaging device 1 does not turn on the reset transistor 53 (keeps it off), and reads the pixel signal of the other of the left photodiode PD groups and the right photodiode PD groups in the pixel set 51. For example, the pixel signal of the right photodiode PD group.

[0168] The voltage signal output to the column signal processing circuit 5 is the sum of the signals of the left photodiode PD groups and the right photodiode PD groups and the dark level signal. The column signal processing circuit 5 first obtains the pixel signals of the left photodiode PD groups and the right photodiode PD groups by subtracting the dark level signal from the voltage signal, and then obtains the pixel signal of the right photodiode PD group by subtracting the pixel signal of the left photodiode PD group obtained earlier from the pixel signals of the left photodiode PD groups and the right photodiode PD groups.

[0169] In the second reading method, the pixel signals of the left photodiode PD and the right photodiode PD can be obtained as described above, and the phase difference signal can be obtained indirectly. On the other hand, since the signals are added when the signals for capturing images are analog signals, the signal has good signal quality, and also has advantages in terms of reading time and power consumption compared with the first reading method.

[0170] <5.3 Four-pixel addition mode>

[0171] Next, the four-pixel addition mode will be described.

[0172] In the case where phase difference information is not required, the solid-state imaging device 1 can execute the following four-pixel addition mode: in each pixel set 51 as a common unit, that is, in units of 4 pixels in a 2×2 form, the pixel signals are added and output.

[0173] In the four-pixel addition mode, all (8) transfer transistors TG in the pixel set 51 as a common unit are turned on simultaneously, and the charges in all the photodiodes PD in the pixel set 51 are supplied to the FD 52. The FD 52 adds the charges of all the photodiodes PD in the pixel set 51. Then, the voltage signal corresponding to the added charges is output to the column signal processing circuit 5. By obtaining the difference between the voltage signal and the dark level signal, the pixel signals of each pixel set 51 can be obtained.

[0174] <5.4 First phase difference HDR mode>

[0175] Next, the first phase difference HDR mode will be described.

[0176] The first phase difference HDR mode is an output mode capable of detecting a phase difference and generating a high dynamic range image (hereinafter referred to as an HDR image).

[0177] In order to detect a phase difference, at least some of the plurality of pixels 2 that make up the pixel array 3 need to be pixels 2 that respectively output the pixel signals of the left photodiode PD and the right photodiode PD.

[0178] In addition, in order to generate an HDR image, the plurality of pixels 2 that make up the pixel array 3 need to include pixels 2 with different exposure times.

[0179] Therefore, in the first phase difference HDR mode, as Figure 9 shown, the solid-state imaging device 1 sets two types of exposure times for the plurality of pixels 2 that make up the pixel array 3.

[0180] Figure 9 is a diagram showing the exposure times set for 4 (2×2) pixel sets 51 in the Bayer array that is part of the pixel array 3 in the first phase difference HDR mode.

[0181] In the first phase difference HDR mode, one of the first exposure time and the second exposure time is set for each pixel. The second exposure time is an exposure time shorter than the first exposure time (first exposure time > second exposure time). In Figure 9 , an "L" is written in the photodiode PD set with the first exposure time, and an "S" is written in the photodiode PD set with the second exposure time.

[0182] As Figure 9 shown, for the 4 pixels 2 that make up one pixel set 51, the first exposure time and the second exposure time are set in pairs along the diagonal direction. For example, as Figure 9 in the example, the first exposure time (L) is set for the upper right and lower left two pixels among the 4 pixels that make up the pixel set 51, and the second exposure time (S) is set for the lower right and upper left two pixels. It should be noted that the arrangement of the pixels 2 set with the first exposure time (L) and the second exposure time (S) can be reversed.

[0183] Figure 10 is a diagram showing the process of reading pixel signals in the first phase difference HDR mode. Similarly in Figure 10 , the shaded photodiode PD represents the photodiode PD selected to output the pixel signal.

[0184] In the first phase difference HDR mode, as Figure 10As shown, the solid-state imaging element 1 outputs the pixel signals of all the photodiodes PD for two pixels with the first exposure time (L) set, and for two pixels with the second exposure time (S) set, outputs the pixel signals of the left photodiode PD and the right photodiode PD, respectively.

[0185] Specifically, the solid-state imaging element 1 simultaneously outputs the pixel signals of multiple photodiodes PD in the order of the pixel signals of all the photodiodes PD of two pixels 2 in the upper right and lower left, the pixel signals of the left photodiodes PD of the upper left and lower right pixels 2, and the pixel signals of the right photodiodes PD of the upper left and lower right pixels 2.

[0186] Therefore, two pixels 2 with the exposure time set to the second exposure time (S) output the pixel signals of the left photodiode PD and the right photodiode PD, respectively, so that the phase difference can be detected. In addition, since it includes pixels 2 with the first exposure time (L) set and pixels 2 with the second exposure time (S) set, an HDR image can be generated.

[0187] It should be noted that the pixel 2 for detecting the phase difference can be a pixel 2 with the exposure time set to the first exposure time (L). However, if the light intensity is high, the pixel 2 may saturate. Therefore, preferably, the pixel 2 for detecting the phase difference is a pixel 2 with the second exposure time (S) set. By using the pixel 2 with the second exposure time (S) set as the phase difference detection pixel, the phase difference information can be obtained without causing saturation.

[0188] As described above, in the first phase difference HDR mode, for each pixel set 51, two types of exposure times, namely the first exposure time (L) and the second exposure time (S), are set, and in some pixels 2 of the pixel set 51, specifically, in the pixels 2 with the second exposure time (S) set, the pixel signals of the left photodiode PD and the right photodiode PD are output, respectively, to detect the phase difference, so that the signals for phase difference detection and the signals of the HDR image with a high dynamic range can be obtained simultaneously.

[0189] <5.5 Second Phase Difference HDR Mode>

[0190] Next, the second phase difference HDR mode will be described.

[0191] Similar to the first phase difference HDR mode, the second phase difference HDR mode is an output mode capable of performing phase difference detection and HDR image generation. The second phase difference HDR mode is different from the first phase difference HDR mode in that the exposure times set for the pixels 2 in the pixel array 3 are not two types in the first phase difference HDR mode, but three types.

[0192] Figure 11 FIG. is a diagram showing exposure times set for a 4-(2×2) pixel set 51 in a Bayer array that is part of a pixel array 3 in a second phase difference HDR mode.

[0193] In the second phase difference HDR mode, one of the first to third exposure times is set for each pixel. The second exposure time is an exposure time shorter than the first exposure time, and the third exposure time is an exposure time shorter than the second exposure time (first exposure time > second exposure time > third exposure time). In Figure 11 , an "L" is written in the photodiode PD set with the first exposure time, an "M" is written in the photodiode PD set with the second exposure time, and an "S" is written in the photodiode PD set with the third exposure time. Among the first exposure time (L), the second exposure time (M), and the third exposure time (S), the middle second exposure time (M) is the exposure time suitable for appropriate exposure during automatic exposure.

[0194] As Figure 11 shown, among the 4 pixels 2 constituting one pixel set 51, the second exposure time (M) is set for two pixels in a predetermined diagonal direction, the first exposure time (L) is set for one of the two pixels in the other diagonal direction, and the third exposure time (S) is set for the other. Note that the diagonal direction in which the second exposure time (M) is set may be the diagonally right direction, rather than Figure 11 the left diagonal direction in. In addition, the arrangement of the pixels 2 set with the first exposure time (L) and the third exposure time (S) may be reversed.

[0195] Figure 12 FIG. is a diagram showing the process of reading pixel signals in the second phase difference HDR mode. Similarly in Figure 12 FIG., the shaded photodiode PD represents the photodiode PD selected to output the pixel signal.

[0196] In the second phase difference HDR mode, as Figure 12 shown, the solid-state imaging device 1 outputs the pixel signals of the left photodiode PD and the right photodiode PD for the two pixels set with the second exposure time (M) respectively, and outputs the pixel signals of the photodiode PD for the two pixels set with the first exposure time (L) and the third exposure time (S) in units of each pixel.

[0197] Specifically, the solid-state imaging device 1 outputs pixel signals of a plurality of photodiodes PD simultaneously in the order of pixel signals of two photodiodes PD of the pixel 2 in the upper right, pixel signals of the left photodiodes PD of the pixels 2 in the upper left and lower right, pixel signals of the right photodiodes PD of the pixels 2 in the upper left and lower right, and pixel signals of two photodiodes PD of the pixel 2 in the lower left.

[0198] Therefore, for two pixels 2 whose exposure time is set to the second exposure time (M), pixel signals of the left photodiode PD and the right photodiode PD are respectively output so that the phase difference can be detected. In addition, since pixels 2 with different exposure times are included, an HDR image can be generated.

[0199] It should be noted that the pixels 2 for detecting the phase difference can be pixels 2 whose exposure time is set to the first exposure time (L) or the third exposure time (S). However, if the light intensity is high, the pixels 2 may be saturated, and if the light intensity is low, the signal level may be too low. Therefore, preferably, pixels 2 with the second exposure time (M) for appropriate exposure are used. By using pixels 2 with the second exposure time (M) as the phase difference detection pixels, phase difference information can be obtained without causing saturation.

[0200] As described above, in the second phase difference HDR mode, for each pixel set 51, three types of exposure times, namely the first exposure time (L), the second exposure time (M), and the third exposure time (S), are set, and in some pixels 2 of each pixel set 51, specifically, in pixels 2 with the second exposure time (M), pixel signals of the left photodiode PD and the right photodiode PD are respectively output to detect the phase difference, so that signals for phase difference detection and signals of an HDR image with a high dynamic range can be obtained simultaneously.

[0201] It should be noted that in order to be able to operate in both the first phase difference HDR mode and the second phase difference HDR mode, the pixel sets 51 arranged in the horizontal direction need 8 signal lines 61-1 to 61-8 or 62-1 to 62-8 as shown. However, in the case where it is only necessary to be able to operate in only one of the first phase difference HDR mode and the second phase difference HDR mode, the number of signal lines for each pixel set 51 arranged in the horizontal direction can be reduced. Figure 5 For example,

[0202] For example, Figure 13 illustrates a wiring example of signal lines in the case where the operation in only the first phase difference HDR mode is implemented as an output mode capable of phase difference detection and HDR image generation.

[0203] InFigure 13 In this case, by arranging four signal lines 81-1 to 81-4 for a pixel set 51 arranged in the horizontal direction, operation in the first phase difference HDR mode becomes possible.

[0204] Specifically, a single signal line 81-1 is arranged to control the pixel signal of the left photodiode PD of the pixels 2 paired in the diagonal direction having an exposure time set to the second exposure time (S), and a single signal line 81-2 is arranged to control the pixel signal of the right photodiode PD. In addition, a single signal line 81-3 is arranged to control the pixel signal of the left photodiode PD of the pixels 2 paired in the diagonal direction having an exposure time set to the first exposure time (L), and a single signal line 81-4 is arranged to control the pixel signal of the right photodiode PD.

[0205] Figure 14 The figure illustrates a wiring example of signal lines in the case where operation in only the second phase difference HDR mode is implemented as an output mode capable of performing phase difference detection and HDR image generation.

[0206] In Figure 14 this case, by arranging six signal lines 82-1 to 82-6 for a pixel set 51 arranged in the horizontal direction, operation in the second phase difference HDR mode becomes possible.

[0207] Specifically, a single signal line 82-1 is arranged to control the pixel signal of the left photodiode PD of the pixels 2 having an exposure time set to the first exposure time (L), and a single signal line 82-2 is arranged to control the pixel signal of the right photodiode PD. In addition, a single signal line 82-3 is arranged to control the pixel signal of the left photodiode PD of the pixels 2 paired in the diagonal direction having an exposure time set to the second exposure time (M), and a single signal line 82-4 is arranged to control the pixel signal of the right photodiode PD. A single signal line 82-5 is arranged to control the pixel signal of the left photodiode PD of the pixels 2 having an exposure time set to the third exposure time (S), and a single signal line 82-6 is arranged to control the pixel signal of the right photodiode PD.

[0208] As described above, the solid-state imaging device 1 can execute a full-resolution mode that outputs the pixel signals of the photodiodes PD of each pixel 2 as an output mode, a four-pixel addition phase difference detection mode that adds and outputs the pixel signals of the left photodiode PD or the right photodiode PD in units of four pixels, a four-pixel addition mode that adds and outputs the pixel signals of all the photodiodes PD in the pixel set 51, and a first phase difference HDR mode and a second phase difference HDR mode capable of performing phase difference detection and HDR image generation.

[0209] The full-resolution mode can achieve phase difference detection in all pixels and high-resolution output through re-stitching, and the four-pixel addition phase difference detection mode can achieve phase difference detection across the entire surface and high S / N and high dynamic range signal output through four-pixel addition. In addition, the four-pixel addition mode can achieve high S / N and high dynamic range signal output through four-pixel addition, and the first phase difference HDR mode and the second phase difference HDR mode can achieve HDR image generation and phase difference detection across the entire surface. It should be noted that, in order to achieve HDR, as described above, at least two exposure times can be set for pixels with a single sensitivity, or a single exposure time can be set for multiple pixels with different sensitivities formed as a pixel set. Examples of multiple pixels with different sensitivities include: pixels including a photodiode with a large light-receiving area as pixels with high sensitivity; and pixels including a photodiode with a small light-receiving area as pixels with low sensitivity.

[0210] It should be noted that, of course, the solid-state imaging device 1 may also be able to execute output modes other than the above-described output modes.

[0211] <6. Variation Example of Color Array of Color Filter>

[0212] Figure 15 A variation example of the color array of the color filter is illustrated.

[0213] In the above example, as Figure 3 shown in this and other figures, the R, G, and B color filters 37 are arranged in a Bayer array in units of pixel sets 51.

[0214] In contrast, in Figure 15 , the R, G, and B color filters 37 are arranged in a Bayer array in units of pixels 2.

[0215] Therefore, the color filter 37 can be arranged in a Bayer array in units of pixels.

[0216] The common unit of the pixel circuit sharing the reset transistor 53, the amplification transistor 54, and the selection transistor 55 can be 4 pixels in the form of 2×2 (2 vertical pixels × 2 horizontal pixels) as Figure 4 shown, or can be 4 pixels in the form of 4×1 (4 vertical pixels × 1 horizontal pixel). If 4 pixels in the form of 4×1 are set as the common unit, then as Figure 15 shown, the color array of the color filter 37 in the Bayer array in units of pixels allows addition of pixel signals of pixels of the same color.

[0217] <7. Variation Example of Arrangement Direction of Photodiode>

[0218] Figure 16Illustrated is a modified example of the arrangement direction of the photodiode PD.

[0219] In the above example, as Figure 3 shown, in each pixel set 51, a pair of photodiodes PD in pixel 2 are formed such that the arrangement direction of their longitudinal shapes is the same direction, and in all pixel sets 51, this arrangement direction is also the same direction.

[0220] However, the arrangement direction of the longitudinal shapes of a pair of photodiodes PD in a pixel can be different between pixels or between pixel sets.

[0221] Figure 16 FIG. A of

[0222] illustrates an example where, in each pixel set 51, a pair of photodiodes PD in pixel 2 are formed such that the arrangement direction of their longitudinal shapes is the same direction, but this arrangement direction is different between pixel sets 51. Figure 16 In FIG. A of

[0223] Figure 16

[0224] Figure 16 In Figure 16 FIG. B of

[0225] Figure 16The C diagram shows the following example: Among each pixel set 51 including color filters 37 of the same color, in two pixels arranged in the horizontal direction, the paired photodiodes PD formed in the longitudinal shape are formed such that the arrangement direction of the longitudinal shape is the orthogonal direction, and in two pixels arranged in the vertical direction, the paired photodiodes PD formed in the longitudinal shape are also formed such that the arrangement direction of the longitudinal shape is the orthogonal direction.

[0226] In Figure 16 In C, among each pixel set 51, the photodiodes PD are formed such that the arrangement direction of the longitudinal shape of the paired photodiodes PD in the upper two pixels is the left - right direction (horizontal direction) and the up - down direction (vertical direction), and the arrangement direction of the longitudinal shape of the paired photodiodes PD in the lower two pixels is also the left - right direction (horizontal direction) and the up - down direction (vertical direction).

[0227] As described above, the two photodiodes PD formed in the longitudinal shape in each pixel are symmetrically arranged in the vertical direction or the horizontal direction, and for their arrangement direction in the pixels of the pixel set 51, the same direction or the orthogonal direction can be used.

[0228] <8. Variation of on - chip lens arrangement>

[0229] Figure 17 The diagram shows a variation of the arrangement of the on - chip lens 38.

[0230] In the above example, as Figure 3 shown, the on - chip lens 38 is formed for each pixel.

[0231] However, as Figure 17 shown, for some of the pixel sets 51 that make up the pixel array 3, one on - chip lens 91 can be arranged for one pixel set 51.

[0232] Figure 17 The A diagram shows the following example: One on - chip lens 91 is arranged for the pixel set 51Gb including the G color filter 37, and for the other pixel sets 51Gr, 51R, and 51B, the on - chip lenses 38 of each pixel are arranged.

[0233] Figure 17 The B diagram shows the following example: One on - chip lens 91 is arranged for the pixel set 51R including the R color filter 37, and for the other pixel sets 51Gr, 51Gb, and 51B, the on - chip lenses 38 of each pixel are arranged.

[0234] Figure 17The C diagram of FIG. shows the following example: Among them, an on-chip lens 91 is arranged for the pixel set 51B including the B color filter 37, and for the other pixel sets 51Gr, 51R, and 51Gb, on-chip lenses 38 of each pixel are arranged.

[0235] In the pixel array 3 in which the pixel sets 51 are arranged two-dimensionally, Figure 17 The on-chip lenses 91 in A to C of FIG. can be arranged at regular intervals or randomly.

[0236] Although the pixel set 51 with the on-chip lens 91 cannot obtain the pixel signal for generating the HDR image, the pixel signals in each pixel can be used to detect the phase difference, so it is effective for phase difference detection under low illuminance.

[0237] <9. Example of the second cross-sectional structure of the pixel>

[0238] Figure 18 is a diagram showing Figure 1 an example of the second cross-sectional structure of the pixel array 3 of the solid-state imaging device 1 in FIG.

[0239] In Figure 18 FIG., parts corresponding to the parts in the first cross-sectional structure example shown in Figure 2 FIG. are denoted by the same reference numerals, and the description of these parts will be appropriately omitted.

[0240] Figure 18 The difference between the second cross-sectional structure example of FIG. and Figure 2 the first cross-sectional structure example shown in FIG. is that an insulating layer 101 is formed in the semiconductor substrate 12.

[0241] Specifically, in Figure 2 the first cross-sectional structure example shown in FIG., only the P-type semiconductor region 31 and the N-type semiconductor region 32 are formed in the semiconductor substrate 12. In Figure 18In the second cross-sectional structure example, the insulating layer 101 is also formed at the pixel boundaries between adjacent pixels and between two photodiodes PD in each pixel. The insulating layer 101 is formed, for example, by deep trench isolation (DTI: Deep Trench Isolation), in which an oxide film (e.g., TEOS film) is formed on the inner peripheral surface of a deep groove (trench) dug from the back side of the semiconductor substrate 12, and the trench interior is filled with polysilicon. Note that the insulating layer 101 is not limited to the structure using an oxide film and polysilicon, and may be a structure using a metal such as hafnium or a structure using an impurity layer. In addition, insulating layers 101 with different structures may be applied to different pixels. For example, in the R pixel that transmits a relatively long wavelength, an impurity layer may be applied as the insulating layer 101, and in the B pixel and G pixel, an oxide film, polysilicon, or metal may be applied as the insulating layer 101. In addition, the insulating layer 101 may be a shallow trench isolation (STI: Shallow Trench Isolation) that is shallower than DTI, or may be a full trench isolation (FTI: Full Trench Isolation) that completely separates pixels from each other.

[0242] Figure 19 is a plan view showing a region where the insulating layer 101 is formed within a range of 16 pixels in a 4×4 format.

[0243] From Figure 19 the plan view, it can be seen that the insulating layer 101 is formed at the boundary of pixel 2 and between two photodiodes PD in each pixel, and the two photodiodes PD are separated from each other by the insulating layer 101.

[0244] <10. Third cross-sectional structure example of a pixel>

[0245] Figure 20 is a diagram showing Figure 1 a third cross-sectional structure example of the pixel array 3 of the solid-state imaging device 1 in

[0246] In Figure 20 , parts corresponding to those in the second cross-sectional structure example shown in Figure 18 are denoted by the same reference numerals, and descriptions of these parts will be appropriately omitted.

[0247] In Figure 18 's second cross-sectional structure example, the insulating layer 101 is formed at the boundary of pixel 2 and between two photodiodes PD in each pixel.

[0248] In Figure 20In the third cross-sectional structure example, although an insulating layer 101 is formed at the boundary of pixel 2 as in the second cross-sectional structure example, an impurity layer 102 having a conductivity type opposite to that of the N-type semiconductor region 32 (i.e., P-type) is formed between two photodiodes PD in each pixel. The impurity concentration of the P-type impurity layer 102 is higher than the impurity concentration of the semiconductor region 31. The impurity layer 102 can be formed, for example, by ion implantation from the back side of the semiconductor substrate 12.

[0249] Figure 21 FIG. is a plan view showing a region where the insulating layer 101 and the impurity layer 102 are formed within a range of 16 pixels in a 4×4 form.

[0250] From Figure 21 the plan view, it can be seen that the insulating layer 101 is formed at the boundary of pixel 2, and the impurity layer 102 separates two photodiodes PD in each pixel from each other.

[0251] As Figure 22 shown in B of FIG., the potential barrier between two photodiodes PD in each pixel can be the same as the potential barrier at the pixel boundary, or can be made lower than the potential barrier at the pixel boundary.

[0252] Figure 22 FIG. A is a cross-sectional structure diagram of one pixel in the third cross-sectional structure example, and Figure 22 FIG. B is a potential diagram corresponding to Figure 22 FIG. A.

[0253] As Figure 22 shown in B of FIG., by making the potential barrier between two photodiodes PD lower than the potential barrier at the pixel boundary, when the charge accumulated in one photodiode PD reaches the saturation level, the charge first flows into the other photodiode PD before overflowing into the FD 52. Therefore, the linearity of the pixel signal of one pixel obtained by combining the left photodiode PD and the right photodiode PD can be improved.

[0254] By adjusting the impurity concentration in the impurity layer 102, the height of the potential barrier between the photodiodes PD can be made lower than the potential barrier at the pixel boundary.

[0255] It should be noted that, as Figure 21 shown, the impurity layer 102 can be formed to completely isolate the region sandwiched between two photodiodes PD, or as Figure 23 shown, can be formed to isolate only a part of the region sandwiched between two photodiodes PD. In Figure 23 FIG., the impurity layer 102 is formed only in a part near the pixel center of the region sandwiched between two photodiodes PD.

[0256] Figure 23 The cross-sectional view of the portion in which the impurity layer 102 is formed is the same as that of Figure 20 and Figure 23 the cross-sectional view of the portion in which the impurity layer 102 is not formed is the same as that of Figure 18 the same.

[0257] <11. Structural Example of Adding a Light-Shielding Film>

[0258] In the above example, although the inter-pixel light-shielding film 36 for preventing light from entering adjacent pixels is formed at the pixel boundary portion, the light-shielding film is not formed on the photodiode PD.

[0259] However, for some pixels 2 in the pixel array 3, a structure in which the light-shielding film is disposed on the two photodiodes PD in the pixel can be adopted.

[0260] Figure 24 is a plan view showing a first structure in which the light-shielding film is disposed on the photodiode PD.

[0261] In Figure 24 A and B of, in each pixel 2 of the pixel set 51Gr, the upper half or the lower half of the two photodiodes PD in the pixel is shielded from light by the light-shielding film 121.

[0262] Figure 24 A of is an example in which the lower half of the two photodiodes PD in the pixel is shielded from light by the light-shielding film 121, and Figure 24 B of is an example in which the upper half of the two photodiodes PD in the pixel is shielded from light by the light-shielding film 121.

[0263] As Figure 3 the same, the on-chip lens 38 is formed for each pixel.

[0264] Using the pixel signals (added pixel signals of 4 pixels) of the pixel set 51Gr in Figure 24 A in which a plurality of light-shielding films 121 are symmetrically arranged and Figure 24 the pixel signals (added pixel signals of 4 pixels) of the pixel set 51Gr in

[0265] Figure 25 is a plan view showing a second structure in which the light-shielding film is disposed on the photodiode PD.

[0266] In Figure 25 A and B of, in each pixel 2 of the pixel set 51Gr, one of the two photodiodes PD of the pixel is shielded from light by the light-shielding film 121.

[0267] Figure 25Example A shows the left photodiode PD among the two photodiodes PD of each pixel 2 in the pixel set 51Gr being shielded by the light-shielding film 121, and Figure 25 Example B shows the right photodiode PD among the two photodiodes PD of each pixel 2 in the pixel set 51Gr being shielded by the light-shielding film 121.

[0268] As Figure 3 shown, an on-chip lens 38 is formed for each pixel.

[0269] Using the pixel signals of the pixel set 51Gr in Figure 25 Example A where multiple light-shielding films 121 are symmetrically arranged (the added pixel signal of 4 pixels) and Figure 25 the pixel signals of the pixel set 51Gr in Example B (the added pixel signal of 4 pixels), phase difference information is obtained.

[0270] Figure 24 And Figure 25 both the first structure and the second structure in are structures where the light-shielding film 121 partially shields all the pixels 2 in the pixel set 51Gr.

[0271] Figure 26 is a plan view showing a third structure of arranging the light-shielding film on the photodiode PD.

[0272] In Figure 26 Examples A and B, among the 4 pixels constituting the pixel set 51Gb, all the photodiodes PD of the upper two pixels or the lower two pixels are shielded by the light-shielding film 121.

[0273] Figure 26 Example A shows all the photodiodes PD of the lower two pixels in the pixel set 51Gb being shielded by the light-shielding film 121, and Figure 26 Example B shows all the photodiodes PD of the upper two pixels in the pixel set 51Gb being shielded by the light-shielding film 121.

[0274] In Figure 26 , as Figure 17 shown, an on-chip lens 91 is formed on the pixel set 51Gb where the light-shielding film 121 is arranged. On the pixel sets 51Gr, 51R, and 51B where the light-shielding film 121 is not arranged, on-chip lenses 38 for each pixel are formed.

[0275] Using the pixel signals of the pixel set 51Gb in Figure 26 Example A where multiple light-shielding films 121 are symmetrically arranged (the added pixel signal of 4 pixels) and Figure 26 the pixel signals of the pixel set 51Gb in Example B (the added pixel signal of 4 pixels), phase difference information is obtained.

[0276] Figure 27 It is a plan view showing a fourth structure in which a light-shielding film is disposed on a photodiode PD.

[0277] Among Figure 27 A and B of , among the four pixels constituting the pixel set 51Gb, all the photodiodes PD of the two left pixels or the two right pixels are shielded from light by the light-shielding film 121.

[0278] Figure 27 A of is an example in which all the photodiodes PD of the two left pixels in the pixel set 51Gb are shielded from light by the light-shielding film 121, and Figure 27 B of is an example in which all the photodiodes PD of the two right pixels in the pixel set 51Gb are shielded from light by the light-shielding film 121.

[0279] Among Figure 27 as in Figure 17 a on-chip lens 91 is formed on the pixel set 51Gb on which the light-shielding film 121 is disposed. On the pixel sets 51Gr, 51R, and 51B on which the light-shielding film 121 is not disposed, on-chip lenses 38 of respective pixels are formed.

[0280] Using the pixel signals (added pixel signals of four pixels) of the pixel set 51Gb in Figure 27 A in which a plurality of light-shielding films 121 are symmetrically disposed and Figure 27 the pixel signals (added pixel signals of four pixels) of the pixel set 51Gb in

[0281] Figure 26 and Figure 27 the third structure and the fourth structure in are both structures in which the light-shielding film 121 completely shields some pixels 2 in the pixel set 51Gb from light.

[0282] In the case where the light intensity of incident light is high and phase difference information cannot be obtained in the pixel set 51 in which the light-shielding film 121 is not disposed, Figures 24 to 27 the first to fourth structures in which the light-shielding film 121 is disposed allow the pixel set 51 in which the light-shielding film 121 is disposed to obtain phase difference information. Therefore, the first to fourth structures in which the light-shielding film 121 is disposed can effectively obtain phase difference information in the case where the light intensity of incident light is high.

[0283] Figures 24 to 27 The first to fourth structures in in which the light-shielding film is disposed are examples in which the light-shielding film 121 is disposed in the pixel set 51Gb or the pixel set 51Gr. Similar light-shielding films 121 can be formed for other pixel sets 51R or 51B, or the light-shielding film 121 can be formed on all the pixel sets 51Gb, 51R, and 51B.

[0284] <12. Other Modification Examples>

[0285] Figure 28 Another modification example of the solid-state imaging device 1 is illustrated.

[0286] In the above example, the constituent unit of the pixel set 51 is four pixels in the form of 2×2 (2 vertical pixels × 2 horizontal pixels). However, the pixel set 51 is not limited to four pixels in the form of 2×2, and only needs to include a plurality of pixels 2.

[0287] Figure 28 An example is illustrated in which the constituent unit of the pixel set 51 is sixteen pixels in the form of 4×4 (4 vertical pixels × 4 horizontal pixels). Although Figure 28 the example of illustrates an example in which an on-chip lens 38 is formed for each pixel, it is not limited thereto. One on-chip lens may be arranged for four pixels in the form of 2×2, or one on-chip lens may be arranged for sixteen pixels in the form of 4×4.

[0288] In addition, for example, nine pixels in the form of 3×3 (3 vertical pixels × 3 horizontal pixels) may be set as the constituent unit of the pixel set 51.

[0289] Figure 29 Yet another modification example of the solid-state imaging device 1 is illustrated.

[0290] In the above example, a color filter 37 that allows light of wavelengths of R, G, or B to pass through is formed in each pixel 2 of the solid-state imaging device 1.

[0291] However, as Figure 29 shown, a configuration in which the color filter 37 is removed may be adopted. In this case, the pixels 2 of the solid-state imaging device 1 can receive light of all wavelengths of R, G, and B to generate and output pixel signals.

[0292] Alternatively, instead of the color filter 37, the solid-state imaging device 1 may be provided with an infrared filter that transmits infrared rays to receive only infrared rays, thereby generating and outputting pixel signals.

[0293] <13. Arrangement Example of Pixel Transistors>

[0294] The arrangement example of pixel transistors will be described with reference to Figure 30 .

[0295] In the pixel array 3, for example, the arrangement of the photodiode PD and the pixel transistor shown in Figure 30 is repeated in the horizontal and vertical directions.

[0296] Figure 30It is a plan view showing an example of the arrangement of pixel transistors in a pixel region of a total of 16 pixels, in which a pixel set 51 is arranged in a 2×2 form and its constituent unit is 4 pixels in the form of 2×2 (2 vertical pixels × 2 horizontal pixels). In Figure 30 The part indicated by the black circle represents the contact part of the power supply, GND, or signal line. It should be noted that in Figure 30 Some reference numerals are omitted in order to prevent the drawing from being complicated.

[0297] In Figure 30 As in the example shown in Figure 3 A photodiode PD, a color filter 37 ( Figure 30 not shown in the figure) and an on-chip lens 38 are formed. Specifically, two photodiodes PD are arranged in a horizontally symmetric form in a longitudinal shape for one pixel. An on-chip lens 38 is formed for each pixel. The color filter 37 is arranged in a Bayer array in units of pixel sets 51. The upper left pixel set 51 is the pixel set 51Gr including the G color filter 37, the upper right pixel set 51 is the pixel set 51R including the R color filter 37, the lower left pixel set 51 is the pixel set 51B including the B color filter 37, and the lower right pixel set 51 is the pixel set 51Gb including the G color filter 37.

[0298] As described with reference to Figure 4 One pixel set 51 including 4 pixels is provided with 8 photodiodes PD, 8 transfer transistors TG, and an FD 52, a reset transistor 53, an amplification transistor 54, and a selection transistor 55 shared by these 8 photodiodes PD and 8 transfer transistors TG.

[0299] As Figure 30 shown, the 8 photodiodes PD included in one pixel set 51 are arranged in the form of 2×4 (2 vertical × 4 horizontal), and the reset transistor 53, the amplification transistor 54, and the selection transistor 55 shared by the 8 photodiodes PD are arranged vertically (longitudinally) adjacent to the 8 photodiodes PD in the form of 2×4. If the reset transistor 53, the amplification transistor 54, and the selection transistor 55 shared by the 8 photodiodes PD are collectively referred to as shared-type pixel transistors, the shared-type pixel transistors are arranged between the 8 photodiodes PD in the form of 2×4 and the 8 photodiodes PD in two vertically adjacent pixel sets 51.

[0300] Four photodiodes PD in a 2×2 configuration are grouped together, and transfer transistors TG arranged corresponding to the photodiodes PD one by one are disposed near the center of the group. In the right group of the pixel set 51, four transfer transistors TG are centrally disposed near the center of four photodiodes PD in a 2×2 configuration, and in the left group of the pixel set 51, four transfer transistors TG are centrally disposed near the center of four photodiodes PD in a 2×2 configuration.

[0301] FD 52 includes at least metal wiring 52A as part of it. As Figure 30 shown, the metal wiring 52A is wired to electrically connect the middle portions of four photodiodes PD in a 2×2 configuration in the right group of the pixel set 51, the middle portions of four photodiodes PD in a 2×2 configuration in the left group of the pixel set 51, the gate electrode of the amplification transistor 54, and the source electrode of the reset transistor 53. The charge accumulated in each photodiode PD in the pixel set 51 is transferred to the metal wiring 52A that forms part of the FD 52 through the corresponding transfer transistor TG, and is transferred through the metal wiring 52A and supplied to the gate electrode of the amplification transistor 54. In addition, when the reset transistor 53 is turned on, the charge in the FD 52 is discharged from the source electrode of the reset transistor 53 to the drain electrode.

[0302] Therefore, for the common-type pixel transistors (reset transistor 53, amplification transistor 54, and selection transistor 55), a layout can be adopted in which the common-type pixel transistors are disposed between eight photodiodes PD in one pixel set 51 and eight photodiodes PD in another adjacent pixel set 51 in the column direction. Note that, although not shown, a layout in which the common-type pixel transistors are disposed between eight photodiodes PD and eight photodiodes PD in pixel sets 51 adjacent to each other in the row direction can also be used.

[0303] <14. Application Examples of Electronic Devices>

[0304] The present technology is not limited to being applied to solid-state imaging elements. Specifically, the present technology is applicable to all electronic devices that use a solid-state imaging element as an image capturing unit (photoelectric conversion unit), such as imaging devices including digital cameras and video cameras, portable terminal devices having an imaging function, and copying machines that use a solid-state imaging element as an image reading unit. The solid-state imaging element can be formed as a single chip, or can be in a modular form having an imaging function, in which the imaging unit and the signal processing unit or the optical system are encapsulated together.

[0305] Figure 31 is a block diagram illustrating a configuration example of an imaging device as an electronic device to which the present technology is applied.

[0306] Figure 31 The imaging device 200 in Figure 31 includes: an optical unit 201 including a lens group and the like; a solid-state imaging element (imaging device) 202 using the structure of the solid-state imaging element 1 in Figure 1 ; and a digital signal processor (DSP) circuit 203 as a camera signal processing circuit. In addition, the imaging device 200 further includes a frame memory 204, a display unit 205, a recording unit 206, an operation unit 207, and a power supply 208. The DSP circuit 203, the frame memory 204, the display unit 205, the recording unit 206, the operation unit 207, and the power supply 208 are connected to each other via a bus 209.

[0307] The optical unit 201 captures incident light (image light) from a subject and forms an image on the imaging surface of the solid-state imaging element 202. The solid-state imaging element 202 converts the amount of incident light that forms an image on the imaging surface through the optical unit 201 into an electrical signal pixel by pixel, and outputs the electrical signal as a pixel signal. As the solid-state imaging element 202, the solid-state imaging element 1 in Figure 1 can be used, that is, a solid-state imaging element capable of simultaneously obtaining a signal for generating a high dynamic range image and a signal for detecting a phase difference.

[0308] The display unit 205 includes, for example, a thin display such as a liquid crystal display (LCD) or an organic electroluminescence (EL) display, and displays a moving image or a still image captured by the solid-state imaging element 202. The recording unit 206 records the moving image or the still image captured by the solid-state imaging element 202 on a recording medium such as a hard disk or a semiconductor memory.

[0309] The operation unit 207 issues operation commands for various functions of the imaging device 200 under the operation of a user. The power supply 208 appropriately supplies various power supplies serving as operation power supplies for the DSP circuit 203, the frame memory 204, the display unit 205, the recording unit 206, and the operation unit 207 to these power supply objects.

[0310] As described above, by using the solid-state imaging element 1 applying the above-described embodiment as the solid-state imaging element 202, a signal for generating a high dynamic range image and a signal for detecting a phase difference can be obtained simultaneously. Therefore, an imaging device 200 such as a camera or a digital camera, or a camera module for a mobile device such as a mobile phone can also improve the quality of a captured image.

[0311] <Example of Use of Image Sensor>

[0312] ​​​​Figure 32 This is a diagram showing an example of the use of an image sensor using the above-described solid-state imaging device 1.

[0313] The image sensor using the above-described solid-state imaging device 1 can be used in various situations where light such as visible light, infrared light, ultraviolet light, and X-rays is sensed.

[0314] · Devices for taking images for appreciation, such as digital cameras and portable devices with camera functions.

[0315] · Devices for transportation purposes, such as in-vehicle sensors for imaging the front, rear, surroundings, and interior of a vehicle for safe driving such as automatic stop and identifying the driver's state; surveillance cameras for monitoring moving vehicles and roads; and distance measurement sensors for measuring distances between vehicles, etc.

[0316] · Devices for household appliances such as televisions, refrigerators, and air conditioners to image the user's gestures and perform device operations based on the gestures.

[0317] · Devices for healthcare purposes, such as endoscopes and devices for imaging blood vessels by receiving infrared light.

[0318] · Devices for security purposes, such as surveillance cameras for crime prevention applications and cameras for personnel authentication applications.

[0319] · Devices for beauty purposes, such as skin measuring devices for imaging the skin and microscopes for imaging the scalp.

[0320] · Devices for sports purposes, such as action cameras for sports applications and wearable cameras.

[0321] · Devices for agricultural purposes, such as cameras for monitoring the state of fields and crops.

[0322] <15. Application Example of Endoscopic Surgery System>

[0323] The technology according to the present invention (this technology) can be applied to various products. For example, the technology according to the present invention can be applied to an endoscopic surgery system.

[0324] Figure 33 This is a diagram showing an example of the schematic configuration of an endoscopic surgery system to which the technology according to the present invention (this technology) can be applied.

[0325] Figure 33The figure shows a state in which an operator (doctor) 11131 is performing a surgery on a patient 11132 on a hospital bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical instruments 11110 including a pneumoperitoneum tube 11111 and an energy treatment instrument 11112, a support arm device 11120 for supporting the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are installed.

[0326] The endoscope 11100 includes: a lens barrel 11101 having a region of a predetermined length starting from the distal end inserted into the body cavity of the patient 11132; and a camera 11102 connected to the proximal end of the lens barrel 11101. Although in the illustrated example, the endoscope 11100 shown as a so-called rigid endoscope with a rigid lens barrel 11101 is illustrated, the endoscope 11100 may be formed as a so-called flexible endoscope with a flexible lens barrel.

[0327] An opening is provided at the distal end of the lens barrel 11101, and an objective lens is installed in the opening. A light source device 11203 is connected to the endoscope 11100. The light generated by the light source device 11203 is guided to the distal end of the lens barrel 11101 through an optical waveguide extending inside the lens barrel 11101, and the light is irradiated toward an observation target in the body cavity of the patient 11132 through the objective lens. It should be noted that the endoscope 11100 may be a forward-view endoscope, a side-view endoscope, or a lateral-view endoscope.

[0328] An optical system and an imaging element are provided inside the camera 11102. The light (observation light) reflected from the observation target is converged on the imaging element through the optical system. The observation light is subjected to photoelectric conversion by the imaging element, and an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image, is generated. This image signal is transmitted as RAW data to a camera control unit (CCU: Camera Control Unit) 11201.

[0329] The CCU 11201 includes a central processing unit (CPU) or a graphics processing unit (GPU), etc., and centrally controls the operations of the endoscope 11100 and the display device 11202. In addition, the CCU 11201 receives the image signal from the camera 11102, and performs various image processing operations such as development processing (demosaicing) on the image signal to display an image based on the image signal.

[0330] Under the control of the CCU 11201, the display device 11202 displays an image based on the image signal that has undergone image processing by the CCU 11201.

[0331] The light source device 11203 includes a light source such as a light-emitting diode (LED), etc., and supplies illumination light when imaging a surgical site or the like to the endoscope 11100.

[0332] The input device 11204 is an input interface of the endoscopic surgical system 11000. A user can input various information and input commands into the endoscopic surgical system 11000 through the input device 11204. For example, the user inputs commands to change the imaging conditions (type of illumination light, magnification, focal length, etc.) of the endoscope 11100, etc.

[0333] The treatment instrument control device 11205 controls the drive of the energy treatment instrument 11112 for tissue cauterization, incision, or blood vessel sealing, etc. The insufflation device 11206 feeds gas into the body cavity of the patient 11132 through the insufflation tube 11111 to expand the body cavity for the purpose of providing a view for the endoscope 11100 and providing a working space for the operator. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various forms including text, images, and charts.

[0334] It should be noted that the light source device 11203 that supplies illumination light when imaging a surgical site to the endoscope 11100 may include a white light source, which includes, for example, an LED, a laser light source, or a combination of both. In the case where the white light source includes a combination of RGB laser light sources, the output intensity and output timing of various colors (various wavelengths) can be controlled with high precision. Therefore, the light source device 11203 can adjust the white balance of the captured image. In addition, in this case, by irradiating the observation target with laser light from each of the RGB laser light sources in a time-division manner and controlling the drive of the imaging element of the camera 11102 in synchronization with the irradiation timing, it is possible to capture images corresponding to RGB in a time-division manner. According to this method, a color image can be obtained even when a color filter is not provided in the imaging element.

[0335] In addition, the drive of the light source device 11203 can be controlled so as to change the intensity of the output light every predetermined time. By controlling the drive of the imaging element of the camera 11102 in synchronization with the timing of the change in the light intensity and obtaining images in a time-division manner, and by synthesizing the images, a high-dynamic-range image without so-called underexposure and overexposure can be generated.

[0336] In addition, the light source device 11203 can be configured to be capable of supplying light in a predetermined wavelength band suitable for special light observation. In special light observation, for example, the so-called narrow-band imaging is performed as follows: wherein, by irradiating a light in a wavelength band narrower than the irradiation light (i.e., white light) during normal observation to a predetermined tissue such as blood vessels in a surface layer portion such as a mucous membrane by utilizing the wavelength dependence of light absorption in body tissues, the above-mentioned predetermined tissue can be imaged with high contrast. Alternatively, in special light observation, fluorescence observation for obtaining an image by irradiating excitation light to generate fluorescence can be performed. Fluorescence observation allows for the observation of fluorescence from body tissues (autofluorescence observation) by irradiating excitation light to body tissues, or allows for obtaining a fluorescence image, etc. by locally injecting a reagent such as indocyanine green (ICG) into body tissues and irradiating excitation light corresponding to the fluorescence wavelength of the reagent to the body tissues. The light source device 11203 can be configured to be capable of supplying narrow-band light and / or excitation light suitable for such special light observation.

[0337] Figure 34 illustrates Figure 33 a block diagram showing an example of the functional configuration of the illustrated camera 11102 and CCU 11201.

[0338] The camera 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera 11102 and the CCU 11201 are communicably connected to each other via a transmission cable 11400.

[0339] The lens unit 11401 is an optical system that is provided at a portion connected to the lens barrel 11101. The observation light introduced from the distal end of the lens barrel 11101 is guided to the camera 11102 and enters the lens unit 11401. The lens unit 11401 includes a combination of a plurality of lenses, which includes a zoom lens and a focusing lens.

[0340] The imaging unit 11402 includes an imaging element. The imaging unit 11402 may include a single imaging element (so-called single-panel imaging unit), or may include a plurality of imaging elements (so-called multi-panel imaging unit). In the case where the imaging unit 11402 is a multi-panel imaging unit, for example, the imaging elements may generate image signals corresponding one-to-one to RGB, and may synthesize the image signals to obtain a color image. Alternatively, the imaging unit 11402 may include a pair of imaging elements for respectively obtaining a left-eye image signal and a right-eye image signal corresponding to 3D (three-dimensional) display. By performing 3D display, the operator 11131 can more accurately understand the depth of the living tissue at the surgical site. Note that in the case where the imaging unit 11402 is a multi-panel imaging unit, a plurality of lens units 11401 may be provided for the corresponding imaging elements.

[0341] In addition, the imaging unit 11402 may not necessarily be provided in the camera 11102. For example, the imaging unit 11402 may be provided immediately behind the objective lens inside the lens barrel 11101.

[0342] The drive unit 11403 includes an actuator, and under the control of the camera control unit 11405, the drive unit 11403 moves the zoom lens and the focus lens of the lens unit 11401 along the optical axis by a predetermined distance. Thereby, the magnification and focus of the image captured by the imaging unit 11402 can be appropriately adjusted.

[0343] The communication unit 11404 includes a communication device for transmitting various information to the CCU 11201 and receiving various information from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 through the transmission cable 11400.

[0344] In addition, the communication unit 11404 receives a control signal for controlling the drive of the camera 11102 from the CCU 11201, and the communication unit 11404 supplies the control signal to the camera control unit 11405. The control signal includes, for example, information related to imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of imaging, and / or information specifying the magnification and focus of the captured image.

[0345] Note that imaging conditions such as frame rate, exposure value, magnification, and focus as described above can be appropriately specified by the user, or can be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, so-called Auto Exposure (AE), Auto Focus (AF), and Auto White Balance (AWB) functions are installed on the endoscope 11100.

[0346] The camera control unit 11405 controls the driving of the camera 11102 based on the control signal received from the CCU 11201 through the communication unit 11404.

[0347] The communication unit 11411 includes a communication device for transmitting various information to the camera 11102 and receiving various information from the camera 11102. The communication unit 11411 receives the image signal transmitted from the camera 11102 through the transmission cable 11400.

[0348] In addition, the communication unit 11411 transmits a control signal for controlling the driving of the camera 11102 to the camera 11102. The image signal and the control signal can be transmitted through electrical communication, optical communication, or the like.

[0349] The image processing unit 11412 performs various image processing operations on the image signal transmitted from the camera 11102 as RAW data.

[0350] The control unit 11413 performs various controls for imaging the surgical site and other areas through the endoscope 11100 and for displaying the captured images obtained by imaging the surgical site and other areas. For example, the control unit 11413 generates a control signal for controlling the driving of the camera 11102.

[0351] In addition, the control unit 11413 causes the display device 11202 to display a captured image showing a surgical site or the like based on an image signal that has undergone image processing by the image processing unit 11412. At this time, the control unit 11413 can use various image recognition techniques to recognize various objects in the captured image. For example, by detecting the shape or color of the edges of the objects included in the captured image, the control unit 11413 can recognize surgical instruments such as forceps, specific living body parts, bleeding, and haze when using the energy treatment instrument 11112. When causing the display device 11202 to display the captured image, the control unit 11413 can use the recognition results to superimpose and display various surgical support information on the image of the surgical site. Through the superimposed surgical support information presented to the operator 11131, the burden on the operator 11131 can be reduced, and the operator 11131 can perform the surgery reliably.

[0352] The transmission cable 11400 for connecting the camera 11102 and the CCU 11201 is an electrical signal cable for electrical signal communication, an optical fiber for optical communication, or a composite cable for both electrical signal communication and optical communication.

[0353] Here, although in the illustrated example, communication is performed by using the wiring of the transmission cable 11400, communication between the camera 11102 and the CCU 11201 can be performed wirelessly.

[0354] So far, an example of an endoscopic surgery system to which the technology according to the present invention can be applied has been described. The technology according to the present invention can be applied to the imaging unit 11402 in the above configuration. Specifically, the solid-state imaging element 1 according to the above embodiment can be applied as the imaging unit 11402. By applying the technology according to the present invention to the imaging unit 11402, a signal for generating a high dynamic range image and a signal for detecting a phase difference can be obtained simultaneously. Therefore, high-quality captured images and distance information can be obtained, and the safety of the driver and the vehicle can be improved.

[0355] It should be noted that although an endoscopic surgery system has been described as an example here, the technology according to the present invention can also be applied to, for example, a microsurgery system.

[0356] <16. Application Examples of Mobile Bodies>

[0357] The technology (this technology) according to the present invention can be applied to various products. For example, the technology according to the present invention can be implemented as a device installed on any type of mobile body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, and a robot.

[0358] Figure 35 This is a block diagram schematically showing a configuration example of a vehicle control system as an example of a mobile body control system to which the technology according to the present invention can be applied.

[0359] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. Among Figure 35 the illustrated examples, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside vehicle information detection unit 12030, an inside vehicle information detection unit 12040, and an integrated control unit 12050. In addition, a microcomputer 12051, a sound / image output unit 12052, and a vehicle-mounted network interface (I / F) 12053 are shown as functional configurations of the integrated control unit 12050.

[0360] The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 functions as a control device for the following devices: a driving force generation device for generating a vehicle driving force, such as an internal combustion engine or a drive motor; a driving force transmission mechanism for transmitting the driving force to the wheels; a steering mechanism for adjusting the vehicle steering angle; and a braking device for generating a vehicle braking force, etc.

[0361] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, an electric window device, or various lights including a headlight, a taillight, a brake light, an indicator light, and a fog light. In this case, the body system control unit 12020 can receive the input of radio waves transmitted from a portable device substituting for a key or signals of various switches. The body system control unit 12020 receives the input of these radio waves or signals and controls the vehicle door lock device, the electric window device, and the lights, etc.

[0362] The outside vehicle information detection unit 12030 detects information related to the outside of the vehicle equipped with the vehicle control system 12000. For example, a camera unit 12031 is connected to the outside vehicle information detection unit 12030. The outside vehicle information detection unit 12030 causes the camera unit 12031 to capture an image of the outside of the vehicle and receives the captured image. Based on the received image, the outside vehicle information detection unit 12030 can perform object detection processing or distance measurement processing on a person, a vehicle, an obstacle, a sign, or characters on the road surface, etc.

[0363] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of received light. The imaging unit 12031 can output the electrical signal as an image or can output the electrical signal as ranging information. In addition, the light received by the imaging unit 12031 can be visible light or can be invisible light such as infrared light.

[0364] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 for detecting the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera for imaging the driver. Based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the degree of fatigue or concentration of the driver or can determine whether the driver is dozing off.

[0365] The microcomputer 12051 can calculate control target values for the driving force generation device, the steering mechanism, or the braking device based on the information outside or inside the vehicle obtained by the out-vehicle information detection unit 12030 or the in-vehicle information detection unit 12040, and the microcomputer 12051 outputs a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an Advanced Driver Assistance System (ADAS), which includes vehicle collision avoidance or shock mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, and vehicle lane departure warning, etc.

[0366] In addition, based on the information around the vehicle obtained by the out-vehicle information detection unit 12030 or the in-vehicle information detection unit 12040, the microcomputer 12051 can perform cooperative control of autonomous driving aimed at driving autonomously without relying on the driver's operation by controlling the driving force generation device, the steering mechanism, or the braking device, etc.

[0367] In addition, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle obtained by the out-vehicle information detection unit 12030. For example, by controlling the headlight or switching the high beam to the low beam according to the position of the vehicle ahead or the oncoming vehicle detected by the out-vehicle information detection unit 12030, the microcomputer 12051 can perform cooperative control aimed at preventing glare.

[0368] The sound / image output unit 12052 transmits an output signal of at least one of sound and image to an output device that can notify the occupants of the vehicle or the outside of the vehicle of information visually or auditorily.Figure 35 In the example, the audio speaker 12061, the display unit 12062, and the instrument panel 12063 are illustrated as output devices. For example, the display unit 12062 may include at least one of an in-vehicle display and a head-up display.

[0369] Figure 36 is a diagram illustrating an example of the installation position of the imaging unit 12031.

[0370] In Figure 36 vehicle 12100 includes imaging units 12101, 12102, 12103, 12104, and 12105 as the imaging unit 12031.

[0371] The imaging units 12101, 12102, 12103, 12104, and 12105 are, for example, arranged at positions such as the front nose of the vehicle 12100, side mirrors, rear bumpers or rear doors, and the upper part of the windshield inside the vehicle compartment. The imaging unit 12101 arranged at the front nose and the imaging unit 12105 arranged at the upper part of the windshield inside the vehicle compartment mainly acquire images in front of the vehicle 12100. The imaging units 12102 and 12103 arranged at the side mirrors mainly acquire images on the sides of the vehicle 12100. The imaging unit 12104 arranged at the rear bumper or rear door mainly acquires images behind the vehicle 12100. The front images acquired by the imaging units 12101 and 12105 are mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, or lanes.

[0372] It should be noted that Figure 36 illustrates an example of the imaging ranges of the imaging units 12101 to 12104. The imaging range 12111 represents the imaging range of the imaging unit 12101 arranged at the front nose, the imaging ranges 12112 and 12113 respectively represent the imaging ranges of the imaging units 12102 and 12103 arranged at the side mirrors, and the imaging range 12114 represents the imaging range of the imaging unit 12104 arranged at the rear bumper or rear door. For example, by superimposing the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 as viewed from above is obtained.

[0373] At least one of the imaging units 12101 to 12104 may have a function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera including a plurality of imaging elements, or may be an imaging element including pixels for phase difference detection.

[0374] For example, the microcomputer 12051 can determine the distance to a three-dimensional object within the imaging ranges 12111 to 12114 and the temporal change in this distance (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104, and thereby particularly extract the nearest three-dimensional object as a preceding vehicle as follows: the three-dimensional object is located on the traveling path of the vehicle 12100, and the three-dimensional object travels in substantially the same direction as the vehicle 12100 at a predetermined speed (for example, equal to or greater than 0 km / h). Further, in the case where a vehicle-to-vehicle distance to be provided in front of the preceding vehicle is preset, the microcomputer 12051 can perform automatic braking control (including follow-stop control) and automatic acceleration control (including follow-start control), etc. Accordingly, cooperative control such as autonomous driving aimed at autonomous driving without relying on the driver's operation can be performed.

[0375] For example, the microcomputer 12051 can extract three-dimensional object data related to three-dimensional objects classified as two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, and other three-dimensional objects such as utility poles, etc., based on the distance information obtained from the imaging units 12101 to 12104 for automatically avoiding obstacles. For example, for obstacles around the vehicle 12100, the microcomputer 12051 classifies them into obstacles that can be visually recognized by the driver of the vehicle 12100 and obstacles that are difficult to visually recognize. Then, the microcomputer 12051 determines a collision risk for indicating the degree of collision risk with each obstacle. In the case where the collision risk is equal to or higher than a set value and there is a possibility of collision, the microcomputer 12051 can perform assisted driving to avoid the collision by outputting a warning to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0376] At least one of the imaging units 12101 to 12104 may be an infrared camera for detecting infrared rays. For example, the microcomputer 12051 can identify a pedestrian by determining whether there is a pedestrian in the captured images of the imaging units 12101 to 12104. For example, pedestrian recognition is performed through the following processes: a process of extracting feature points in the captured images of the imaging units 12101 to 12104 that are infrared cameras; and a process of performing pattern matching on a series of feature points representing the object contour to determine whether the object is a pedestrian. When the microcomputer 12051 determines that there is a pedestrian in the captured images of the imaging units 12101 to 12104 and identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 to superimpose and display a rectangular contour for emphasizing the identified pedestrian. Alternatively, the sound / image output unit 12052 may control the display unit 12062 to display an icon representing the pedestrian or the like at a desired position.

[0377] So far, an example of a vehicle control system to which the technology according to the present invention can be applied has been described. The technology according to the present invention can be applied to the imaging unit 12031 among the above configurations. Specifically, the solid-state imaging element 1 according to the above embodiment can be applied as the imaging unit 12031. By applying the technology according to the present invention to the imaging unit 12031, a signal for generating a high dynamic range image and a signal for detecting a phase difference can be obtained simultaneously. Therefore, high-quality captured images and distance information can be obtained, and the safety of the driver and the vehicle can be improved.

[0378] In the above example, a solid-state imaging element having a first conductivity type of P-type and a second conductivity type of N-type and using electrons as signal charges has been described. This technology is also applicable to a solid-state imaging element using holes as signal charges. That is, in the case where the first conductivity type is N-type and the second conductivity type is P-type, each of the above semiconductor regions may be formed of semiconductor regions having opposite conductivity types.

[0379] Embodiments of the present technology are not limited to the above embodiments, and various modifications can be made without departing from the gist of the present technology.

[0380] For example, a form in which all or a part of the above embodiments are combined can be used.

[0381] It should be noted that the effects described in this specification are merely examples and are not restrictive. Effects other than those described in this specification may be included.

[0382] Note that the present technology may also adopt the following configuration.

[0383] (1) A solid-state imaging element, comprising:

[0384] A plurality of pixel sets corresponding to a plurality of colors, each of the pixel sets including a plurality of pixels having color filters of the same color, and each of the pixels including a plurality of photoelectric conversion parts.

[0385] (2) The solid-state imaging device according to (1) above, wherein,

[0386] Each of the pixels includes two of the photoelectric conversion parts symmetrically arranged in the vertical direction or the horizontal direction, and

[0387] The arrangement direction of the photoelectric conversion parts of the pixel is at least the same direction in each individual pixel set.

[0388] (3) The solid-state imaging device according to (2) above, wherein,

[0389] The arrangement direction of the photoelectric conversion parts of the pixel is the same direction in all the pixel sets.

[0390] (4) The solid-state imaging device according to (1) above, wherein,

[0391] Each of the pixels includes two of the photoelectric conversion parts symmetrically arranged in the vertical direction or the horizontal direction, and

[0392] In each of the pixel sets, the arrangement directions of the photoelectric conversion parts of the two pixels arranged in the horizontal direction are the same direction.

[0393] (5) The solid-state imaging device according to (1) above, wherein,

[0394] Each of the pixels includes two of the photoelectric conversion parts symmetrically arranged in the vertical direction or the horizontal direction, and

[0395] In each of the pixel sets, the arrangement directions of the photoelectric conversion parts of the two pixels arranged in the horizontal direction are orthogonal directions.

[0396] (6) The solid-state imaging device according to any one of (1) to (5) above, wherein,

[0397] The plurality of photoelectric conversion parts of each of the pixels are isolated from each other by an insulating layer.

[0398] (7) The solid-state imaging device according to any one of (1) to (5) above, wherein,

[0399] The plurality of photoelectric conversion parts of each of the pixels are isolated from each other by an impurity layer having a conductivity type opposite to that of the photoelectric conversion parts.

[0400] (8) The solid-state imaging device according to (7) above, wherein

[0401] the barrier formed by the impurity layer is lower than the barrier at the pixel boundary.

[0402] (9) The solid-state imaging device according to any one of (1) to (8) above, wherein

[0403] a light-shielding film is formed in some of the plurality of pixel sets, and the light-shielding film partially shields all the pixels in each of the pixel sets.

[0404] (10) The solid-state imaging device according to any one of (1) to (8) above, wherein

[0405] a light-shielding film is formed in some of the plurality of pixel sets, and the light-shielding film completely shields some of the pixels in each of the pixel sets.

[0406] (11) The solid-state imaging device according to any one of (1) to (10) above, further comprising:

[0407] a charge holding unit that holds the charge generated in the photoelectric conversion unit,

[0408] the charge holding unit adds up and outputs the charges generated in the photoelectric conversion units of the plurality of pixels.

[0409] (12) The solid-state imaging device according to (11) above, wherein

[0410] the charge holding unit adds up and outputs the charges generated in the photoelectric conversion units of all the pixels in each of the pixel sets.

[0411] (13) The solid-state imaging device according to (11) above, wherein

[0412] the charge holding unit adds up and outputs the charges in the photoelectric conversion units at the same positions in the pixels among the photoelectric conversion units of the plurality of pixels included in each of the pixel sets.

[0413] (14) The solid-state imaging device according to any one of (1) to (13) above, wherein

[0414] among the photoelectric conversion units of the plurality of pixels included in each of the pixel sets, the first photoelectric conversion unit and the second photoelectric conversion unit are exposed for different exposure times.

[0415] (15) The solid-state imaging device according to (14) above, further comprising:

[0416] A control unit that controls to output, as pixel signals, the charges of the light received by each of the photoelectric conversion units.

[0417] The control unit outputs a first pixel signal of the first photoelectric conversion unit exposed for a first exposure time, and then outputs a second pixel signal of the second photoelectric conversion unit exposed for a second exposure time.

[0418] (16) The solid-state imaging device according to any one of (1) to (15) above, wherein

[0419] Output, respectively, pixel signals generated in at least some of the plurality of photoelectric conversion units among the plurality of pixels included in each of the pixel sets.

[0420] (17) The solid-state imaging device according to any one of (1) to (16) above, wherein

[0421] Among the plurality of pixels included in each of the pixel sets, the photoelectric conversion unit of the first pixel is exposed for a first exposure time, the photoelectric conversion unit of the second pixel is exposed for a second exposure time, the second exposure time is shorter than the first exposure time, and pixel signals generated in the plurality of photoelectric conversion units of the second pixel exposed for the second exposure time are output respectively.

[0422] (18) The solid-state imaging device according to any one of (1) to (16) above, wherein

[0423] Among the plurality of pixels included in each of the pixel sets, the photoelectric conversion unit of the first pixel is exposed for a first exposure time, the photoelectric conversion unit of the second pixel is exposed for a second exposure time, the second exposure time is shorter than the first exposure time, the photoelectric conversion unit of the third pixel is exposed for a third exposure time, the third exposure time is shorter than the second exposure time, and pixel signals generated in the plurality of photoelectric conversion units of the second pixel exposed for the second exposure time are output respectively.

[0424] (19) The solid-state imaging device according to any one of (1) to (18) above, wherein

[0425] The color filters in the pixel sets are arranged in a Bayer array.

[0426] (20) An electronic device including a solid-state imaging device, the solid-state imaging device including:

[0427] A plurality of pixel sets corresponding to multiple colors, each of the pixel sets including a plurality of pixels having color filters of the same color, and each of the pixels including a plurality of photoelectric conversion units.

[0428] List of Reference Numerals

[0429] 1 Solid-state imaging device

[0430] 2 Pixel

[0431] PD Photodiode

[0432] TG Transfer transistor

[0433] 3 Pixel array

[0434] 5 Column signal processing circuit

[0435] 12 Semiconductor substrate

[0436] 31, 32 Semiconductor regions

[0437] 36 Inter-pixel light-shielding film

[0438] 37 Color filter

[0439] 38 On-chip lens

[0440] 51(51Gr, 51Gb, 51R, 51B) Pixel set

[0441] 91 On-chip lens

[0442] 101 Insulating layer

[0443] 102 Impurity layer

[0444] 121 Light-shielding film

[0445] 200 Imaging device

[0446] 202 Solid-state imaging device

Claims

1. A pixel array, which comprises: a first pixel set, a second pixel set, a third pixel set, and a fourth pixel set arranged in a 2×2 matrix in a planar view, each of the first pixel set, the second pixel set, the third pixel set, and the fourth pixel set includes four pixels, and each of the pixels includes two photoelectric conversion parts, wherein, the first pixel set and the fourth pixel set are configured to generate pixel signals corresponding to light in a first wavelength range, the second pixel set is configured to generate pixel signals corresponding to light in a second wavelength range, and the second wavelength range is different from the first wavelength range, the third pixel set is configured to generate pixel signals corresponding to light in a third wavelength range, and the third wavelength range is different from the first wavelength range and the second wavelength range, each of the photoelectric conversion parts of the four pixels in the first pixel set is arranged in a first arrangement direction, each of the photoelectric conversion parts of the four pixels in the second pixel set is arranged in a second arrangement direction, and the second arrangement direction is perpendicular to the first arrangement direction, each of the photoelectric conversion parts of the four pixels in the third pixel set is arranged in the second arrangement direction, and each of the photoelectric conversion parts of the four pixels in the fourth pixel set is arranged in the first arrangement direction, wherein, each of the pixel sets includes a common-type pixel transistor and a transfer transistor provided corresponding to each of the photoelectric conversion parts one by one, in a planar view, the four transfer transistors in the pixel set are arranged near the center of the four photoelectric conversion parts in a 2×2 form, and the common-type pixel transistor is arranged between two adjacent pixel sets.

2. The pixel array according to claim 1, wherein, the first wavelength range corresponds to green, the second wavelength range corresponds to red, and the third wavelength range corresponds to blue.

3. The pixel array according to claim 1, wherein, the photoelectric conversion part is a photodiode.

4. The pixel array according to claim 1, wherein, the photoelectric conversion part has a shape with a main axis, the main axis of the photoelectric conversion part in the first arrangement direction extends in a first direction, and the main axis of the photoelectric conversion part in the second arrangement direction extends in a second direction, and the second direction is perpendicular to the first direction.

5. The pixel array according to claim 1, wherein, the first pixel set and the fourth pixel set each include a first color filter to generate a first color corresponding to the first wavelength range, the second pixel set includes a second color filter to generate a second color corresponding to the second wavelength range, and the third pixel set includes a third color filter to generate a third color corresponding to the third wavelength range.

6. The pixel array according to claim 1, wherein, the photoelectric conversion parts are isolated from each other by an insulating layer.

7. The pixel array according to claim 1, which further comprises: A charge holding unit that holds the charges generated in the photoelectric conversion unit, and adds and outputs the charges generated in the photoelectric conversion unit.

8. The pixel array according to claim 7, wherein, the charge holding unit adds and outputs the charges generated in the photoelectric conversion units of all the pixels in each pixel set.

9. An imaging element, which comprises: A pixel array including a first pixel set, a second pixel set, a third pixel set, and a fourth pixel set arranged in a 2×2 matrix in a plan view. Each of the first pixel set, the second pixel set, the third pixel set, and the fourth pixel set includes four pixels, and each of the pixels includes two photoelectric conversion units. Among them, the first pixel set and the fourth pixel set are configured to generate pixel signals corresponding to light in a first wavelength range, the second pixel set is configured to generate pixel signals corresponding to light in a second wavelength range, and the second wavelength range is different from the first wavelength range, the third pixel set is configured to generate pixel signals corresponding to light in a third wavelength range, and the third wavelength range is different from the first wavelength range and the second wavelength range, each of the photoelectric conversion units of the four pixels in the first pixel set is arranged in a first arrangement direction, each of the photoelectric conversion units of the four pixels in the second pixel set is arranged in a second arrangement direction perpendicular to the first arrangement direction, each of the photoelectric conversion units of the four pixels in the third pixel set is arranged in the second arrangement direction, and each of the photoelectric conversion units of the four pixels in the fourth pixel set is arranged in the first arrangement direction, wherein, among the two photoelectric conversion units of the four pixels included in each pixel set, the exposure times of the two photoelectric conversion units of the first pixel among the four pixels and the exposure times of the two photoelectric conversion units of the second pixel among the four pixels are different.

10. The imaging element according to claim 9, wherein, the first wavelength range corresponds to green, the second wavelength range corresponds to red, and the third wavelength range corresponds to blue.

11. The imaging element according to claim 9, wherein, the photoelectric conversion unit is a photodiode.

12. The imaging element according to claim 9, wherein, the photoelectric conversion unit has a shape with a main axis. The main axis of the photoelectric conversion unit in the first arrangement direction extends in a first direction, and the main axis of the photoelectric conversion unit in the second arrangement direction extends in a second direction perpendicular to the first direction.

13. The imaging element according to claim 9, wherein, The first pixel set and the fourth pixel set each include a first color filter to generate a first color corresponding to the first wavelength range, the second pixel set includes a second color filter to generate a second color corresponding to the second wavelength range, and the third pixel set includes a third color filter to generate a third color corresponding to the third wavelength range.

14. The imaging element according to claim 9, wherein, the photoelectric conversion portions are isolated from each other by an insulating layer.

15. The imaging element according to claim 9, further comprising: a charge holding portion that holds charges generated in the photoelectric conversion portions, and the charge holding portion adds and outputs the charges generated in the photoelectric conversion portions.

16. The imaging element according to claim 15, wherein, the charge holding portion adds and outputs the charges generated in the photoelectric conversion portions of all the pixels in each pixel set.

17. An electronic device, comprising a pixel array, the pixel array including a first pixel set, a second pixel set, a third pixel set, and a fourth pixel set arranged in a 2×2 matrix in a plan view, each of the first pixel set, the second pixel set, the third pixel set, and the fourth pixel set including four pixels, and each of the pixels including two photoelectric conversion portions, wherein, the first pixel set and the fourth pixel set are configured to generate pixel signals corresponding to light in a first wavelength range, the second pixel set is configured to generate pixel signals corresponding to light in a second wavelength range different from the first wavelength range, the third pixel set is configured to generate pixel signals corresponding to light in a third wavelength range different from the first wavelength range and the second wavelength range, each of the photoelectric conversion portions of the four pixels in the first pixel set is arranged in a first arrangement direction, each of the photoelectric conversion portions of the four pixels in the second pixel set is arranged in a second arrangement direction perpendicular to the first arrangement direction, each of the photoelectric conversion portions of the four pixels in the third pixel set is arranged in the second arrangement direction, and each of the photoelectric conversion portions of the four pixels in the fourth pixel set is arranged in the first arrangement direction, wherein each pixel set further includes a charge holding portion connected to the two photoelectric conversion portions of all four pixels in the pixel set, and the charge holding portion adds and outputs the charges in the photoelectric conversion portions at the same positions in the pixels among the two photoelectric conversion portions of all four pixels included in each pixel set.

18. The electronic device according to claim 17, wherein, the first wavelength range corresponds to green, the second wavelength range corresponds to red, and the third wavelength range corresponds to blue.

19. The electronic device according to claim 17, wherein, the photoelectric conversion portion is a photodiode.

20. The electronic device according to claim 17, wherein, the photoelectric conversion unit has a shape with a main axis, the main axis of the photoelectric conversion unit in the first arrangement direction extends in a first direction, and the main axis of the photoelectric conversion unit in the second arrangement direction extends in a second direction, the second direction being perpendicular to the first direction.

Images