A device, a measuring plate and a measuring method for measuring mechanical characteristic parameters of a micro-nano connecting component embedded in a substrate

By designing a device for measuring the mechanical characteristic parameters of micro-nano interconnect components embedded in a substrate, and employing multiple measurement structures and reasonable process parameters, accurate measurement of the mechanical characteristic parameters of micro-nano interconnect components was achieved. This solved the problem of large measurement errors in existing technologies, is applicable to different substrates and measurement equipment, and reduces costs.

CN115728141BActive Publication Date: 2026-02-24XIAMEN UNIV
View PDF 2 Cites 0 Cited by

Patent Information

Application Number
CN202211411507.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-11-11
Publication Date
2026-02-24
Estimated Expiration
2042-11-11

AI Technical Summary

Technical Problem

Existing technologies make it difficult to accurately measure the mechanical characteristic parameters of micro-nano interconnects embedded in substrates. In particular, under external loads such as temperature, force, and acceleration, the deformation and stress of the interconnects are difficult to reflect the true situation, resulting in a high risk of structural failure.

Method used

A device for measuring the mechanical characteristic parameters of micro-nano interconnect components embedded in a substrate was designed, including a clamping component and a measuring component. By connecting multiple measuring structures in series, the stress state of each component under test is ensured to be consistent. Through reasonable structural design and process parameters, it is identical to the micro-nano finished product. Deformation amplification and measurement are performed using dedicated measuring equipment.

Benefits of technology

It enables accurate measurement of the mechanical characteristic parameters of micro-nano interconnect components, reduces measurement errors, reflects the actual mechanical characteristics of the finished product, is applicable to different substrates and measurement equipment, and reduces measurement costs.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN115728141B_ABST
    Figure CN115728141B_ABST
Patent Text Reader

Abstract

The present application relates to the field of micro-nano design and manufacturing, and discloses a kind of embedded substrate micro-nano connecting component mechanical characteristic parameter measuring device, measuring plate and measuring method.Measuring device includes a pair of clamping pieces and a measuring piece, the clamping piece is respectively installed in front and back of measuring piece, the measuring piece is formed by a plurality of measuring structures in series, and the measuring structure is embedded with the measured piece.Measuring plate contains one or more measuring devices.All measuring structures contain the measured piece with consistent structure and size, and the stress conditions of all measured pieces are consistent during the measurement by suitable structure size combination of measuring structure, so as to realize the amplification of micro-nano size deformation.Measuring plate can be used to measure the mechanical characteristic parameters of micro-nano connecting component after one or more process flows.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] This invention relates to the field of micro-nano design and manufacturing, and in particular to a device, measuring plate and measuring method for measuring the mechanical characteristic parameters of micro-nano interconnect components embedded in a substrate. Background Technology

[0002] In the micro-nano design and manufacturing fields involving semiconductor manufacturing, chip packaging, and microelectromechanical systems (MEMS) manufacturing, micro-nano interconnect components embedded in substrates are frequently used, such as through-silicon vias (TSVs) on silicon substrates and through-glass vias (TEVs) on glass substrates. These interconnect components are often used to achieve vertical electrical interconnections through the substrate, and therefore are typically extremely small in size and often use highly conductive but thermally expanded metals such as copper, aluminum, and gold. Due to limitations in structural characteristics and material properties, when products are subjected to external loads such as temperature, force, and acceleration, the interconnect components often exhibit strong deformation and stress, posing a significant risk of structural failure. To reduce this risk, computer numerical simulation technology is needed during the design phase to predict the mechanical behavior of the interconnect components. Since accurate mechanical characteristic parameters are crucial for ensuring the accuracy of numerical simulation results, experimental methods are required to accurately measure these parameters.

[0003] The following methods are commonly used to measure the mechanical characteristic parameters of a structure:

[0004] Firstly, a large-scale experimental sample is fabricated using the same material as the structure under test. Tensile tests are then conducted on the sample using a tensile testing device to obtain the material's characteristic parameters. However, the sample prepared using this method differs significantly in size and manufacturing process from the micro / nano finished product; therefore, the measurement results cannot reflect the true mechanical characteristics of the structure.

[0005] Secondly, thin-film experimental specimens are manufactured using the same materials and similar preparation processes as the structure under test. Tensile tests are then conducted on these specimens using tensile testing equipment to obtain characteristic material parameters. While the measured specimens prepared using this method can reflect the manufacturing process characteristics of the finished product to some extent, their structural form and dimensions are completely different from the finished product, and they cannot reflect the actual mechanical characteristics of the structure.

[0006] Third, the nanoimprint method uses a high-hardness indenter of micro- or nano-sized dimensions to directly leave indentations on the surface of the finished structure, and estimates the surface mechanical characteristics of the structure by the size of the indentations. This method can only obtain the material characteristics near the surface and cannot reflect the overall mechanical characteristics of the structure.

[0007] In micro / nano manufacturing processes, interconnects embedded in substrates are typically fabricated using additive manufacturing methods such as electroplating or vapor deposition. Different manufacturing processes and parameters significantly impact the lattice characteristics of the finished product, ultimately affecting its mechanical properties. Therefore, the measurement sample must be manufactured using the same process and parameters as the finished product. Furthermore, the surface and internal metallographic structures of additively manufactured products differ considerably. Since the interconnects are extremely small, these metallographic differences will significantly influence the structural mechanical properties; therefore, the measurement sample should be the same size as the finished product.

[0008] In addition, due to the limitations of the measuring range and accuracy of the measuring equipment, it is difficult to directly measure the mechanical behavior of a single micro-nano-sized component. Therefore, it is necessary to use a special measuring device to amplify the deformation of the sample in order to meet the requirements of the measuring equipment. Summary of the Invention

[0009] The main objective of this invention is to overcome the aforementioned deficiencies in the prior art and to propose a device, measuring plate, and measuring method for measuring the mechanical characteristic parameters of micro-nano interconnect components embedded in a substrate, which can measure the mechanical characteristic parameter values ​​of micro-nano interconnect components after one or more process flows.

[0010] To achieve the above objectives, the present invention adopts the following technical solution: a device for measuring the mechanical characteristic parameters of micro-nano interconnect components embedded in a substrate, comprising a pair of clamping members and a measuring member, wherein the clamping members are respectively installed on the front and rear sides of the measuring member, and the measuring member is composed of multiple measuring structures connected in series, wherein the measuring structure embeds the component to be measured.

[0011] In a preferred embodiment of the present invention, the clamping component includes a clamping plate, a clamping plate connector, and a post-clamping removal structure.

[0012] In a preferred embodiment of the present invention, the measuring structure includes a force transmission beam, a post-removal structure for the test piece, a force transmission beam connector, a measuring structure connector, and a post-removal structure for the measuring structure.

[0013] Furthermore, the test piece is embedded between two force transmission beams, and the two opposite sides of the test piece are respectively connected to the side of one force transmission beam.

[0014] Furthermore, the force transmission beams are connected by force transmission beam connectors, and the force transmission beams and force transmission beam connectors combine to form a clamp-like structure to apply load to the test piece.

[0015] In a preferred embodiment of the present invention, the measurement structures are consistent in form. The measurement structures are designed to ensure that the stress state of each test piece is completely consistent. That is, in the measurement structure, the force transmission beam, the force transmission beam connector, and the measurement structure connector are combined in a reasonable size combination. Although each measurement structure is a clamp-shaped structure, by controlling the size of different components, the stress state of each test piece can be made completely consistent. The structure and size of the test pieces are completely consistent, and the manufacturing process and process parameters are the same as those of the micro-nano finished products, thereby amplifying the deformation of the test pieces and meeting the range and accuracy requirements of the measurement equipment.

[0016] In a preferred embodiment of the present invention, one of the clamping components is connected to the fixed clamp of the measuring device, and the other is connected to the movable clamp of the measuring device. The measuring device applies mechanical load to the measuring component through the clamping component, causing deformation of all the measuring components.

[0017] In a preferred embodiment of the present invention, the post-clamping removal structure is disposed between the clamping component and the measuring component, and the post-removal structure between the measuring structures is disposed between two adjacent measuring structures. The post-removal structures at these two locations are used to ensure that the test component does not undergo permanent deformation during the manufacturing of the measuring device. The post-removal structure of the test component surrounds the test component to ensure that the spatial constraint it is subjected to during the manufacturing process is the same as the state in which the connecting component is manufactured. The post-clamping removal structure, the post-removal structure between the measuring structures, and the post-removal structure of the test component should be removed before measurement so that the test component is in a state of direct stress.

[0018] In a preferred embodiment of the present invention, the measuring device can directly rely on the test piece to realize the connection between adjacent measuring structures and between the measuring structure and the clamping plate, without including one or more of the clamping plate connector, the clamping removal structure, the force transmission beam connector, and the measurement structure removal structure.

[0019] In a preferred embodiment of the present invention, the test piece can also be embedded between the force transmission beams of adjacent measuring structures in the measuring device, thereby increasing the deformation amplification ratio of the structure. In this state, the original structure removed after measuring the structure will be transformed into a structure removed after the test piece, and the measuring structure connector will be transformed into a force transmission beam connector.

[0020] A mechanical characteristic parameter measurement plate for micro / nano interconnects embedded in a substrate includes one or more devices for measuring the mechanical characteristic parameters of micro / nano interconnects embedded in the substrate.

[0021] In a preferred embodiment of the present invention, the plurality of measuring devices are connected in parallel and share a pair of clamps.

[0022] In a preferred embodiment of the present invention, the movement of the clamping plate will cause deformation of all measuring elements, and cause all measuring elements contained in the measuring plate to deform simultaneously.

[0023] A method for measuring the mechanical characteristic parameters of micro / nano interconnect components embedded in a substrate, implemented using a mechanical characteristic parameter measurement plate for micro / nano interconnect components embedded in a substrate, specifically includes the following steps:

[0024] (1) Fix one side of the measuring plate to the fixed fixture of the measuring equipment, and fix the other side of the measuring plate to the movable fixture of the equipment;

[0025] (2) Turn on the measuring device to make the movable clamp move the clamping plate 11 and cause all the measuring parts 2 of the measuring plate to deform. Record the displacement value U(t) of the movable clamp and the tensile force F(t) of the movable clamp at each time point during the loading process of the measuring device.

[0026] (3) Using mechanical analytical methods or numerical calculation methods, construct a mechanical analysis model of the measuring plate. In the mechanical model, the mechanical characteristic parameters of the test piece 31 are floating values ​​N within a certain range. f [N min N max ];

[0027] (4) Apply the displacement U(t) values ​​obtained in step (2) at each time point to the mechanical analysis model of the measuring plate established in step (3) in the form of displacement load;

[0028] (5) Modify the values ​​of the mechanical characteristic parameters specified in the mechanical analysis model established in step (3) multiple times within the floating range and perform calculations to obtain the reaction force value Ft(t) of the position of the movable clamp under specific parameters until the calculated reaction force value is equal to the value of the movable clamp tension F(t) recorded in step (2), i.e., Ft(t) = F(t). At this time, the mechanical characteristic parameter value set in the mechanical analysis model is the parameter value Nc that needs to be obtained.

[0029] As can be seen from the above description of the present invention, compared with the prior art, the present invention has the following beneficial effects:

[0030] 1. The force state of each test piece in the measuring device and measuring plate of the present invention is completely consistent; since it contains multiple measuring structures, it can amplify the deformation of the test piece, thereby meeting the range and accuracy requirements of the experimental equipment and measuring equipment.

[0031] 2. The structure and size of the test piece of this invention are completely consistent with those of the micro-nano finished product, and the preparation process and process parameters are the same as those of the finished product, which can accurately reflect the actual mechanical characteristics of the finished product.

[0032] 3. The measuring plate of the present invention includes a variety of post-removal structures that are removed by a removal process before measurement. On the one hand, this ensures that the constraints of the test piece are consistent with the finished product during the preparation of the measuring plate, and on the other hand, it ensures the stability of the structure of the measuring plate during manufacturing and movement, reducing the external force on the test piece before measurement, thereby reducing measurement errors.

[0033] 4. The measuring component of the present invention includes multiple measuring structures and a test component embedded therein, which to a certain extent avoids the deviation of product mechanical characteristics caused by process inhomogeneity. The measurement results can reflect the overall mechanical characteristics of the test structure and reduce the error caused by process inhomogeneity.

[0034] 5. The measuring plate of the present invention can measure test pieces of different sizes and structures by changing the planar structure and structural dimensions, and can also achieve different structural deformation amplification ratios, thereby adapting to different types of measuring equipment.

[0035] 6. The measuring structure of the present invention can measure the mechanical characteristics of the test piece under different stress states by changing the planar structure, such as ordinary positive tensile stress state, pure positive tensile stress state, pure shear stress state, interface peeling state, etc.

[0036] 7. The measurement structure of the present invention is applicable to the measurement of the mechanical characteristics of embedded connecting components of different substrates, such as silicon substrates, glass substrates, organic substrates, silicon carbide substrates, silicon nitride substrates, etc.

[0037] 8. The measurement structure described in this invention can prepare multiple sets of measurement plates with different structural forms and different structural sizes on the same wafer or substrate, thereby achieving efficient utilization of materials and equipment and reducing measurement costs. Attached Figure Description

[0038] Figure 1 This is a schematic diagram of the measuring device of the present invention.

[0039] Wherein: 1-clamping component, 2-measuring component, 3-measuring structure;

[0040] Figure 2 This is a schematic diagram of the clamping component structure.

[0041] Wherein: 11-clamping plate, 12-clamping plate connector, 13-structure removed after clamping;

[0042] Figure 3 This is a schematic diagram of the measurement structure.

[0043] Wherein: 31-the part to be tested, 32-force transmission beam, 33-structure removed after the part to be tested, 34-force transmission beam connector, 35-measuring structure connector, 36-structure removed after the measuring structure;

[0044] Figure 4 This is a schematic diagram of the measurement status.

[0045] Wherein: 1-clamping component, 2-measuring component, 3-measuring structure;

[0046] Figure 5 This is a flowchart of the main manufacturing process for the measuring device.

[0047] Figure 6 This is a schematic diagram of the measuring device without a force transmission beam connector in Embodiment 1 of the present invention.

[0048] Wherein: 1-clamping component, 2-measuring component, 3-measuring structure, 11-clamping plate, 31-test piece, 32-force transmission beam, 33-structure to be removed after test piece;

[0049] Figure 7 This is a schematic diagram of the double-sided measuring device for test pieces in Embodiment 2 of the present invention.

[0050] Wherein: 1-clamping component, 2-measuring component, 3-measuring structure, 11-clamping plate, 12-clamping plate connector, 13-structure to be removed after clamping, 31-part to be measured, 32-force transmission beam, 33-structure to be removed after measuring, 34-force transmission beam connector.

[0051] Figure 8 This is a schematic diagram of the shear force condition measuring device in Embodiment 3 of the present invention.

[0052] Wherein: 1-Clamping component, 2-Measuring component, 3-Measuring structure, 11-Clamping plate, 12-Clamping plate connector, 13-Structure removed after clamping component, 31-Component to be measured, 32-Force transmission beam, 33-Structure removed after component to be measured, 34-Force transmission beam connector, 35-Measuring structure connector, 36-Structure removed after measuring structure component;

[0053] Figure 9 This is a schematic diagram of the positive tensile stress condition measuring device in Embodiment 4 of the present invention.

[0054] Wherein: 1-Clamping component, 2-Measuring component, 3-Measuring structure, 11-Clamping plate, 12-Clamping plate connector, 13-Structure removed after clamping component, 31-Component to be measured, 32-Force transmission beam, 33-Structure removed after component to be measured, 34-Force transmission beam connector, 35-Measuring structure connector, 36-Structure removed after measuring structure component;

[0055] Figure 10 This is a schematic diagram of the measuring plate structure in Embodiment 5 of the present invention.

[0056] Wherein: 1-clamping component, 2-measuring component, 3-measuring structure. Detailed Implementation

[0057] The present invention will be further described below through specific embodiments.

[0058] The measuring device of this invention is manufactured on a substrate (silicon substrate, glass substrate, etc.) using micro-nano fabrication processes. Its thickness is the same as that of the substrate, and the relevant structure is represented using a planar diagram. The device under test can be fabricated at the holes in the measuring structure using electroplating or other micro-nano additive manufacturing processes.

[0059] See Figures 1 to 3 A device for measuring the mechanical characteristic parameters of micro / nano interconnect components embedded in a substrate includes: a clamping member 1 and a measuring member 2. The clamping member 1 is installed on both sides of the measuring member 2, and the measuring device is connected to the clamping members 1 on both sides through a clamping plate 11. During the fabrication of the measuring device, the clamping member 1 and the measuring member 2 are connected by a clamping plate connector 12 and a clamping member removal structure 13. Before measurement, the clamping member removal structure 13 is removed by a removal process.

[0060] The measuring component 2 consists of multiple measuring structures 3. During measurement, adjacent measuring structures 3 are connected by measuring structure connectors 35. The measuring structures 3 in the same measuring component 2 are connected end to end to form a series structure, thereby amplifying the deformation of the test piece 31. The extension direction of the measuring structure 3 is called the "measuring direction". The number of measuring structures 3 in the measuring component 2 determines the overall stiffness and magnification ratio of the measuring device, which can be determined according to the range and measurement capability of the measuring equipment.

[0061] The different measurement structures 3 have the same structural form, and the stress state of each embedded test piece 31 is completely consistent through appropriate structural design. During the fabrication of the measurement plate, adjacent measurement structures 3 are connected by a measurement structure removal structure 36 in addition to the measurement structure connector 35, so as to ensure that the dynamic load during the fabrication of the measurement plate will not cause permanent deformation of the test piece 31. Before measurement, the measurement structure removal structure 36 is removed by a removal process.

[0062] The measuring structure 3 includes two force transmission beams 32 with a gap between them. The test piece 31 is embedded between the two force transmission beams 32, and its two opposite sides are connected to the sides of one of the force transmission beams 32. The two force transmission beams 32 are connected by a force transmission beam connector 34. The two force transmission beams 32 and the force transmission beam connector 34 combine to form a clamp-like structure to apply load to the test piece 31.

[0063] During the fabrication of the measuring device, the measuring structure 3 includes a post-test removal structure 33. The two sides of the post-test removal structure 33 are connected to the sides of two force transmission beams 32, respectively. A gap is left in the post-test removal structure 33 at the position of the test piece 31, and the test piece 31 is embedded within the post-test removal structure 33. The dimensions of the post-test removal structure 33 should be much larger than the test piece 31 to ensure that its structural conditions are similar to those of a real micro / nano interconnect structure during the fabrication of the test piece 31. Before testing, the post-test removal structure 33 is removed using a removal process, thereby exposing the test piece 31 so that it is directly subjected to the force transmission beams 32.

[0064] See Figure 4 During measurement, one clamping plate 11 is connected to the fixed clamp of the measuring equipment, and the other clamping plate 11 is connected to the movable clamp of the measuring equipment. During measurement, the movable clamp of the measuring equipment drives the clamping plate 11 to move along the "measurement direction", and records the displacement and clamp tension of the movable clamp at various time states during the movement, which are used for subsequent data calculation.

[0065] See Figure 5 The manufacturing of the measuring device mainly includes three steps. Step 1 – Substrate fabrication: This step uses etching, imprinting, and machining processes to create a planar structure on the substrate. The completed planar structure includes all post-removal structures, leaving only holes at the location of the test piece 31. Step 2 – Test piece fabrication: This step uses electroplating, deposition, and other additive manufacturing processes to fill the holes left in the test piece 31 in Step 1 to form the test piece 31, and uses the same processing technology as the micro-nano finished product to process the structure. Step 3 – Post-removal structure removal: This step uses removal processes to remove the post-removal structure 13 of the clamping parts, the post-removal structure 33 of the test piece, and the post-removal structure 36 between the measuring structures on the measuring device, and removes the additional constraints around the force transmission beam 32 and the test piece 31.

[0066] Example 1

[0067] A measuring device for non-load-bearing beam connectors:

[0068] See Figure 6 When the test piece is sensitive to shear stress or eccentric load, various connection structures that cause eccentric load and shear stress in the test structure can be removed, so that the test piece is only subjected to positive tensile force.

[0069] The measuring device may not include one or more of the following: clamping plate connector 12, clamping removal structure 13, force transmission beam connector 34, and measuring structure removal structure 36. The connection between adjacent measuring structures and between the measuring structure and the clamping plate can be achieved directly by the test piece 31.

[0070] Example 2

[0071] A measuring device for a dual-sided test piece:

[0072] See Figure 7 When the Young's modulus of the test piece is large, and the test plate is difficult to deform accurately, it is necessary to further increase the total number of test pieces included in the measuring device to increase the measurability of the deformation of the measuring plate. In the measuring device, the test pieces 31 can also be embedded between the force transmission beams 32 of adjacent measuring structures, thereby increasing the deformation amplification ratio of the structure. In this state, the original measurement structure removal structure 36 will be transformed into the test piece removal structure 31, and the measuring structure connector 35 will be transformed into the force transmission beam connector.

[0073] Example 3

[0074] A device for measuring shear stress conditions:

[0075] See Figure 8 It is understood that when testing the structural response of the test piece 31 under shear load alone, the force transmission beam 32 structure should be redesigned. By converting the force-bearing surface of the test piece 31 to be parallel to the measuring piece 2, the displacement load of the clamping piece 1 on the measuring structure 3 is transformed into a shear displacement load on the test piece 31. In this state, the force transmission beam 32 structures on both sides of the test piece 31 are no longer completely identical. Corresponding positive and negative protruding mounting structures are formed in the force transmission beam 32. The test piece 31 is installed in the positive and negative protruding mounting structures of the force transmission beam 32 on both sides, and the protruding mounting structures on both sides exert a shear force on the test piece 31.

[0076] Example 4

[0077] A device for measuring positive tensile stress conditions:

[0078] See Figure 9 It can be seen that when the test piece 31 is sensitive to eccentric loading and shear loads, but the force transmission beam connector 34 cannot be removed due to structural limitations, the test piece 31 can be arranged on one side of the force transmission beam 32 to reduce the proportion of eccentric loading in the total displacement load, thereby reducing the impact of eccentric loading on the test piece 31. In this state, the test piece removal structure 33 on one side of the test piece 31 becomes a structure parallel to the measuring piece 2 and directly connected to one side of the measuring piece 2. The improved test piece removal structures 33 on the adjacent test pieces 31 can be merged to form a continuous rectangular structure.

[0079] Therefore, different structural designs of the measurement structure can be used to create specific stress conditions for the test piece 31 to meet the measurement requirements of different mechanical characteristic parameters.

[0080] Example 5

[0081] A mechanical characteristic parameter measurement plate for a micro / nano interconnect component embedded in a substrate, see [link / reference]. Figure 10The measuring plate contains four measuring elements 2 arranged in parallel, sharing a pair of clamping elements 1. The number of clamping elements 12, clamping plate connectors 12, and the number of structures 13 removed after clamping are the same as the number of measuring elements 2 contained in the measuring plate. By connecting multiple measuring elements 2 in parallel, the stiffness of the measuring plate in the "measuring direction" can be adjusted to suit the range and accuracy specifications of the measuring equipment.

[0082] Example 6

[0083] A method for measuring the mechanical characteristic parameters of micro / nano interconnects embedded in a substrate is disclosed. This method employs the aforementioned measuring device and measuring plate for measuring the mechanical characteristic parameters of micro / nano interconnects embedded in a substrate. The performance of the test piece 31 is pre-estimated, and the measurement parameters of the intended measuring equipment are considered. Based on this, the structural dimensions and grouping structure of the measuring device are determined, and the specific structural design of the measuring plate is completed. Then, according to the specific manufacturing process of the test piece, the specific process steps of the measuring plate, the measurement timing, and the timing of removing the post-removal structures of each measuring device are determined before the measuring plate is fabricated.

[0084] Then, measurements are taken using a measuring plate. The measurement process includes the following steps:

[0085] Step 1: Fix one side of the measuring plate 11 to the fixed fixture of the measuring equipment, and fix the other side of the measuring plate 11 to the movable fixture of the equipment;

[0086] Step 2: Turn on the measuring equipment to make the movable clamp move the clamping plate 11 and deform all the measuring parts 2 of the measuring plate. Record the displacement value U(t) of the movable clamp and the tensile force F(t) of the movable clamp at each time point during the loading process of the measuring equipment. For example, if the clamp displacement of the measuring plate is 1.5mm at a certain moment, the actual measured tensile force value is 5N.

[0087] Step 3: Construct a mechanical analysis model of the measuring plate using mechanical analytical methods or numerical calculation methods. In the mechanical model, the Young's modulus of the test piece is a floating value ranging from 100GPa to 300GPa.

[0088] Step 4: Apply the 1.5mm displacement measured in Step 2 at a specific time point to the mechanical analysis model of the measuring plate established in Step 3 as a displacement load;

[0089] Step 5: Within the range of 100GPa to 300GPa, repeatedly modify the Young's modulus of the material under test in the mechanical analysis model established in Step 3 and perform trial calculations to obtain the reaction force value of the movable fixture under each Young's modulus value. Through multiple interpolation and iterative calculations, until the Young's modulus value is 210GPa, the reaction force value calculated by the measuring plate is 5N, which is equal to the tensile force of the movable fixture recorded in Step 2. At this point, the Young's modulus of 210GPa set in the mechanical analysis model is the actual Young's modulus value of the material under test.

[0090] The above are merely specific embodiments of the present invention, but the design concept of the present invention is not limited thereto. Any non-substantial modifications made to the present invention using this concept shall be considered as infringing upon the protection scope of the present invention.

Claims

1. A device for measuring the mechanical characteristic parameters of micro / nano interconnect components embedded in a substrate, characterized in that: The device includes a pair of clamping components and a measuring component. The clamping components are respectively installed on the front and rear sides of the measuring component. The measuring component is composed of multiple measuring structures connected in series, and the part to be measured (DUT) is embedded in the measuring structure. The clamping components include a clamping plate, a clamping plate connector, and a post-clamping removal structure. The measuring structure includes a force transmission beam, a DUT post-removal structure, a force transmission beam connector, a measuring structure connector, and a measuring structure post-removal structure. The DUT is embedded between two force transmission beams, with its two opposite sides connected to the sides of one force transmission beam, or embedded between the force transmission beams of adjacent measuring structures. When embedded between the force transmission beams of adjacent measuring structures, the original post-removal structure between measuring structures is transformed into a DUT post-removal structure, and the measuring structure connector is transformed into a force transmission beam connector. The force transmission beams are connected by the force transmission beam connector, and the force transmission beams and the force transmission beam connectors combine to form a clamp-like structure to apply load to the DUT. The structure, size, and stress state of the DUT are consistent, and the manufacturing process and process parameters are the same as those of the micro / nano finished product.

2. The measuring device as described in claim 1, characterized in that: One of the clamping components is connected to the fixed clamp of the measuring device, and the other is connected to the movable clamp of the measuring device. The measuring device applies mechanical load to the measuring workpiece through the clamping components, causing deformation of all the workpieces to be measured. The clamping component removal structure is disposed between the clamping component and the measuring workpiece, the inter-measuring structure removal structure is disposed between two adjacent measuring structures, and the workpiece removal structure surrounds the workpiece to be measured. The clamping component removal structure, the inter-measuring structure removal structure, and the workpiece removal structure are removed before measurement. The measuring device can directly rely on the workpiece to achieve connection between adjacent measuring structures and between the measuring structure and the clamping plate, without needing to include one or more of the clamping plate connector, clamping component removal structure, force transmission beam connector, and inter-measuring structure removal structure.

3. A mechanical characteristic parameter measurement plate for micro / nano interconnect components embedded in a substrate, comprising one or more mechanical characteristic parameter measurement devices for micro / nano interconnect components embedded in a substrate as described in claim 1 or 2.

4. The measuring plate as described in claim 3, characterized in that: The multiple measuring devices are connected in parallel and share a pair of clamps.

5. The application of a mechanical characteristic parameter measurement plate for micro / nano interconnect components embedded in a substrate as described in claim 3 in a method for measuring the mechanical characteristic parameters of micro / nano interconnect components.

6. An application as described in claim 5, characterized in that: The measurement method includes the following steps: (1) Fix one side of the measuring plate to the fixed fixture of the measuring equipment, and fix the other side of the measuring plate to the movable fixture of the equipment; (2) Turn on the measuring equipment to make the movable fixture move the clamping plate and cause all measuring parts of the measuring plate to deform. Record the displacement value of the movable fixture and the tensile force value of the movable fixture at each time point during the loading process of the measuring equipment. (3) Use mechanical analysis methods or numerical calculation methods to construct a mechanical analysis model of the measuring plate. In the mechanical analysis model, the mechanical characteristic parameters of the test piece are set to values ​​within a certain range. (4) Apply the displacement values ​​obtained in step (2) at each time point to the mechanical analysis model of the measuring plate established in step (3) in the form of displacement load; (5) Modify the values ​​of the mechanical characteristic parameters specified in the mechanical analysis model established in step (3) multiple times within the range of mechanical characteristic parameter values ​​and perform multiple calculations to obtain the reaction force values ​​of the movable clamp under each characteristic parameter value until the calculated reaction force value is equal to the tensile force value of the movable clamp recorded in step (2). At this time, the mechanical characteristic parameter values ​​set in the mechanical analysis model are the parameter values ​​to be obtained.

Citation Information

Patent Citations

  • Observable micro-NANO mechanical testing apparatus and method

    AU2021102459A4

  • Micro drafting device for testing test piece material nano metric mechanical properties

    CN101226120A