A high-frequency series arc modeling method, system, device and readable storage medium

Abstract

The present invention belongs to the technical field of power systems and discloses a high-frequency series arc modeling method, comprising: analyzing a DC circuit and calculating the cathode spot electron current density of the DC circuit; calculating the radius statistical value parameters of the cathode half-point area based on the arc current amplitude; and calculating the radius change sequence of the radius changing with time based on the radius statistical value parameters; calculating the discharge area area sequence based on the radius change sequence; and calculating the arc current sequence based on the discharge area area sequence and the cathode spot electron current density; and modeling the DC series arc based on the arc current sequence. Based on the dynamic characteristics of electrons, the present invention takes the dynamic change process of the cathode spot into account, and uses the change in the cathode spot radius size to simulate the dynamic change process of the cathode spot, thereby modeling the high-frequency series arc. This method can overcome the defect that traditional arc models cannot represent high-frequency noise components, and has the advantages of simple calculation and high modeling accuracy.

Description

Technical Field

[0001] The present invention relates to the technical field of power systems, and in particular to a high-frequency series arc modeling method, system, device and readable storage medium. Background Art

[0002] Over the long term, DC power supply lines may experience insulation aging and cracking, component degradation, and poor contact at terminals. If the voltage of the DC power supply line is high, these issues can create gaps in loose connections, leading to breakdown. This causes the air to transition from an insulating state to a conductive state. This gas discharge is known as an arc fault. A DC arc fault is accompanied by high heat, which can cause the insulation around the fault point to lose its insulating properties. Furthermore, the high temperatures generated by the arc discharge can melt metal materials, potentially igniting combustible materials near the fault point, resulting in a serious electrical fire. The key to real-time fault monitoring and protection is analyzing and understanding the dynamic characteristics of the arc fault, centered around dynamic arc modeling.

[0003] The Cassie arc model and the Mayr arc model were the first arc models proposed to reflect the dynamic changes in arc resistance. The formulas in these two models construct relationships using arc voltage, arc current, arc conductance, and a time constant to dynamically characterize the arc resistance value at the current moment. To analyze the behavior of microscopic or macroscopic particles in arc plasma, domestic and foreign scholars have established magnetofluid models, particle component models, and kinetic models. Particle component models and kinetic models are microscopic models, while magnetofluid models are macroscopic models. The magnetofluid model considers plasma from the perspective of conservation of mass, energy, and momentum, and integrates these with electromagnetic equations to establish a model. With the improvement of computer performance and the refinement of magnetofluid dynamics theory, magnetofluid models have become the primary means of studying and analyzing arcs.

[0004] The Cassie arc model and the Mayr arc model are black-box methods. They model the arc based on its external characteristics and primarily reflect the arc's impedance relative to the external circuit. They do not consider the complex physical and chemical changes within the arc and fail to capture the physical essence of arc discharge. The magnetohydrodynamic arc model assumes that the process on the cathode surface is uniform and stable, ignoring the process of electron emission caused by the alternating generation and extinction of spots on the cathode surface. This makes the arc model incapable of reflecting the high-frequency pulse fault characteristics of DC arcs, hindering the study of DC arc fault mechanisms and DC series arc fault detection.

[0005] Therefore, how to provide a high-frequency series arc model based on the dynamic characteristics of electrons, taking into account the dynamic change process of the cathode spot, and simulating the dynamic change process of the cathode spot by utilizing the change in the radius size of the cathode spot is a problem that needs to be solved urgently. Summary of the Invention

[0006] Embodiments of the present invention provide a high-frequency series arc modeling method, system, device and readable storage medium to solve the problem in the prior art that the high-frequency pulse fault characteristics of DC arc cannot be reflected, which is not conducive to the study of DC arc fault mechanism and DC series arc fault detection.

[0007] To provide a basic understanding of some aspects of the disclosed embodiments, the following is a brief summary. This summary is not intended to be a comprehensive review, identify key or essential elements, or delineate the scope of these embodiments. Its sole purpose is to present some concepts in a simplified form as a prelude to the detailed description that follows.

[0008] According to a first aspect of an embodiment of the present invention, a high-frequency series arc modeling method is provided.

[0009] In one embodiment, the high-frequency series arc modeling method includes:

[0010] Analyze the DC circuit and calculate the cathode spot electron current density of the DC circuit;

[0011] Calculating a radius statistical value parameter of a cathode half-point region of a DC circuit according to a predetermined arc current amplitude; and calculating a radius variation sequence of a radius varying with time according to the radius statistical value parameter;

[0012] Calculating a discharge region area sequence according to the radius variation sequence; and calculating an arc current sequence according to the discharge region area sequence and the cathode spot electron current density;

[0013] According to the arc current sequence, a DC series arc is modeled.

[0014] In one embodiment, analyzing a DC circuit and calculating the cathode spot electron current density of the DC circuit includes:

[0015] Analyze the DC circuit and calculate the cathode spot electron current density of the DC circuit using the thermal electron emission formula;

[0016] Wherein, the thermal electron emission formula is:

[0017]

[0018] Where A c is the emission constant; Tc is the cathode surface temperature; W is the emission surface work function; k B is the Boltzmann constant; j is the electron current density.

[0019] In one embodiment, the radius statistical value parameters include a radius mean parameter and a radius variance parameter.

[0020] In one embodiment, according to the predetermined arc current amplitude, a calculation formula for calculating the radius statistical value parameter of the cathode half-point area of ​​the DC circuit is:

[0021] μ=2.071e 0.02221I -1.544e -0.1441I

[0022] σ=0.001615I 0.1601

[0023] Where μ is the average radius; σ is the radius variance; I is the arc current amplitude; e is a natural constant, and its value is 2.718281828459045.

[0024] In one embodiment, based on the radius statistical value parameter, a calculation formula for calculating a radius change sequence in which the radius changes over time is:

[0025]

[0026] Where, f Rc (t) is the radius change sequence; μ is the mean radius; σ is the radius variance.

[0027] In one embodiment, according to the radius variation sequence, the calculation formula for calculating the discharge region area sequence is:

[0028]

[0029] Where, S(t) is the discharge area sequence; f Rc (t) is the radius variation sequence; π is the circumference of a circle, and its value is 3.1415926.

[0030] In one embodiment, according to the discharge region area sequence and the cathode spot electron current density, the arc current sequence is calculated using the following formula:

[0031] I F (t) = jS(t)

[0032] Where, I F (t) is the arc current sequence; S(t) is the discharge area sequence; j is the electron current density.

[0033] According to a second aspect of an embodiment of the present invention, a high-frequency series arc modeling system is provided.

[0034] In one embodiment, the high-frequency series arc modeling system comprises:

[0035] The electron current density calculation module is used to analyze the DC circuit and calculate the cathode spot electron current density of the DC circuit;

[0036] A first sequence calculation module is configured to calculate a radius statistical value parameter of a cathode half-point region of a DC circuit according to a predetermined arc current amplitude; and calculate a radius variation sequence in which the radius varies with time according to the radius statistical value parameter;

[0037] A second sequence calculation module is configured to calculate a discharge region area sequence based on the radius variation sequence; and calculate an arc current sequence based on the discharge region area sequence and the cathode spot electron current density;

[0038] The series arc modeling module is used to model the DC series arc according to the arc current sequence.

[0039] In one embodiment, when analyzing a DC circuit and calculating the cathode spot electron current density of the DC circuit, the electron current density calculation module calculates the cathode spot electron current density of the DC circuit using a thermal electron emission formula; and the thermal electron emission formula is:

[0040]

[0041] Where A c is the emission constant; T c is the cathode surface temperature; W is the emission surface work function; k B is the Boltzmann constant; j is the electron current density.

[0042] In one embodiment, the radius statistical value parameters include a radius mean parameter and a radius variance parameter.

[0043] In one embodiment, the first sequence calculation module includes: a radius statistics parameter calculation module, which is used to calculate the radius statistics parameter of the cathode half-point area of ​​the DC circuit according to the predetermined arc current amplitude; and its calculation formula is:

[0044] μ=2.071e 0.02221I -1.544e -0.1441I

[0045] σ=0.001615I 0.1601

[0046] Where μ is the average radius; σ is the radius variance; I is the arc current amplitude; e is a natural constant, and its value is 2.718281828459045.

[0047] In one embodiment, the first sequence calculation module includes: a radius change sequence calculation module, which is used to calculate the radius change sequence of the radius changing over time according to the radius statistical value parameter; and its calculation formula is:

[0048]

[0049] Where, f Rc (t) is the radius change sequence; μ is the mean radius; σ is the radius variance.

[0050] In one embodiment, the second sequence calculation module includes: a discharge region area sequence calculation module, configured to calculate the discharge region area sequence according to the radius variation sequence; and the calculation formula is:

[0051]

[0052] Where, S(t) is the discharge area sequence; f Rc (t) is the radius variation sequence; π is the circumference of a circle, and its value is 3.1415926.

[0053] In one embodiment, the second sequence calculation module includes: an arc current sequence calculation module, configured to calculate the arc current sequence according to the discharge region area sequence and the cathode spot electron current density; and the calculation formula is:

[0054] I F (t) = jS(t)

[0055] Where, I F (t) is the arc current sequence; S(t) is the discharge area sequence; j is the electron current density.

[0056] According to a third aspect of an embodiment of the present invention, a computer device is provided.

[0057] In some embodiments, the computer device includes a memory and a processor, the memory stores a computer program, and the processor implements the steps of the above method when executing the computer program.

[0058] According to a fourth aspect of embodiments of the present invention, a computer-readable storage medium is provided.

[0059] In one embodiment, the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the above method are implemented.

[0060] The technical solution provided by the embodiment of the present invention may have the following beneficial effects:

[0061] Based on the dynamic characteristics of electrons, the present invention takes the dynamic change process of the cathode spot into consideration, and uses the change in the radius of the cathode spot to simulate the dynamic change process of the cathode spot, and then performs high-frequency series arc modeling. This can overcome the defect that the traditional arc model cannot characterize the high-frequency noise component, and has the advantages of simple calculation and high modeling accuracy. It has important practical value for the subsequent arc fault protection, control and ranging technology of DC power supply system.

[0062] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0063] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0064] Figure 1 is a flow chart illustrating a method for modeling a high-frequency series arc according to an exemplary embodiment;

[0065] Figure 2 is a structural schematic diagram of a high-frequency series arc modeling system according to an exemplary embodiment;

[0066] Figure 3 is a sequence of images of discharge area radius according to an exemplary embodiment;

[0067] Figure 4 is a sequence of images showing the area of ​​a discharge region according to an exemplary embodiment;

[0068] Figure 5 is a sequence of arc current images showing high-frequency characteristics according to an exemplary embodiment;

[0069] Figure 6 The figure is a schematic diagram showing the structure of a computer device according to an exemplary embodiment. DETAILED DESCRIPTION

[0070] The following description and accompanying drawings sufficiently illustrate the specific embodiments herein to enable those skilled in the art to practice them. Portions and features of some embodiments may be included in or substituted for portions and features of other embodiments. The scope of the embodiments herein includes the entire scope of the claims, including all available equivalents thereof. Herein, the terms "first," "second," and the like are used solely to distinguish one element from another and do not require or imply any actual relationship or order between these elements. In practice, the first element can also be referred to as the second element, and vice versa. Furthermore, the terms "comprise," "comprising," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a structure, device, or apparatus comprising a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such structure, device, or apparatus. Without further limitation, an element defined by the phrase "comprising a..." does not preclude the presence of other identical elements in the structure, device, or apparatus comprising the element. The various embodiments herein are described in a progressive manner, with each embodiment focusing on its differences from the other embodiments. Similar or identical parts between the various embodiments can be referenced to each other.

[0071] The terms "longitudinal", "transverse", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like used herein to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are intended only to facilitate the description of this document and simplify the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the present invention. In the description herein, unless otherwise specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, they can be mechanical or electrical connections, or they can be internal connections between two elements, they can be directly connected, or they can be indirectly connected through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms can be understood according to the specific circumstances.

[0072] As used herein, unless otherwise specified, the term "plurality" means two or more.

[0073] In this document, the character " / " indicates that the preceding and following objects are in an "or" relationship. For example, A / B means: A or B.

[0074] In this article, the term "and / or" is used to describe the association relationship between objects, indicating that three relationships can exist. For example, A and / or B means: A or B, or, A and B.

[0075] It should be understood that, although the various steps in the flowchart are shown in sequence as indicated by the arrows, these steps are not necessarily performed in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and these steps may be performed in other orders. Moreover, at least a portion of the steps in the figure may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily performed at the same time, but may be performed at different times. The execution order of these sub-steps or stages is not necessarily to be performed in sequence, but may be performed in turn or alternately with other steps or at least a portion of the sub-steps or stages of other steps.

[0076] Each module in the device or system of the present application can be implemented in whole or in part by software, hardware, or a combination thereof. The above modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory of the computer device in the form of software so that the processor can call and execute the operations corresponding to the above modules.

[0077] In the absence of conflict, the embodiments of the present invention and the features thereof may be combined with each other.

[0078] Figure 1 An embodiment of the high-frequency series arc modeling method of the present invention is shown.

[0079] In this optional embodiment, the high-frequency series arc modeling method includes:

[0080] Step S101, analyzing the DC circuit and calculating the cathode spot electron current density of the DC circuit;

[0081] Step S103, calculating a radius statistical value parameter of a cathode half-point area of ​​a DC circuit according to a predetermined arc current amplitude; and calculating a radius variation sequence of a radius varying with time according to the radius statistical value parameter;

[0082] Step S105, calculating a discharge region area sequence according to the radius variation sequence; and calculating an arc current sequence according to the discharge region area sequence and the cathode spot electron current density;

[0083] Step S107: Modeling the DC series arc according to the arc current sequence.

[0084] In one embodiment, when analyzing a DC circuit and calculating the cathode spot electron current density of the DC circuit, the cathode spot electron current density of the DC circuit is calculated using a thermal electron emission formula; wherein the thermal electron emission formula is:

[0085]

[0086] Where A c is the emission constant; T c is the cathode surface temperature; W is the emission surface work function; k B is the Boltzmann constant; j is the electron current density.

[0087] In one embodiment, the radius statistical value parameters include a radius mean value parameter and a radius variance parameter. When calculating the radius statistical value parameters of the cathode half-point area of ​​the DC circuit according to the predetermined arc current amplitude, the calculation formula is:

[0088] μ=2.071e 0.02221I -1.544e -0.1441I

[0089] σ=0.001615I 0.1601

[0090] Where μ is the average radius; σ is the radius variance; I is the arc current amplitude; e is a natural constant, and its value is 2.718281828459045.

[0091] In one embodiment, when calculating the radius variation sequence of the radius varying over time based on the radius statistical value parameter, the calculation formula is:

[0092]

[0093] Where, f Rc (t) is the radius change sequence; μ is the mean radius; σ is the radius variance.

[0094] In one embodiment, when calculating the discharge region area sequence according to the radius variation sequence, the calculation formula is:

[0095]

[0096] Where, S(t) is the discharge area sequence; f Rc (t) is the radius variation sequence; π is the circumference of a circle, and its value is 3.1415926.

[0097] In one embodiment, when the arc current sequence is calculated based on the discharge region area sequence and the cathode spot electron current density, the calculation formula is:

[0098] I F (t) = jS(t)

[0099] Where, I F (t) is the arc current sequence; S(t) is the discharge area sequence; j is the electron current density.

[0100] Figure 2 An embodiment of the high-frequency series arc modeling system of the present invention is shown.

[0101] In this optional embodiment, the high-frequency series arc modeling system includes:

[0102] The electron current density calculation module 201 is used to analyze the DC circuit and calculate the cathode spot electron current density of the DC circuit;

[0103] The first sequence calculation module 203 is configured to calculate a radius statistical parameter of a cathode half-point region of a DC circuit according to a predetermined arc current amplitude; and calculate a radius variation sequence of a radius varying with time according to the radius statistical parameter;

[0104] The second sequence calculation module 205 is configured to calculate a discharge region area sequence based on the radius variation sequence; and calculate an arc current sequence based on the discharge region area sequence and the cathode spot electron current density;

[0105] The series arc modeling module 207 is configured to model the DC series arc according to the arc current sequence.

[0106] In one embodiment, when analyzing a DC circuit and calculating the cathode spot electron current density of the DC circuit, the electron current density calculation module 201 calculates the cathode spot electron current density of the DC circuit using a thermal electron emission formula; and the thermal electron emission formula is:

[0107]

[0108] Where A c is the emission constant; T c is the cathode surface temperature; W is the emission surface work function; k B is the Boltzmann constant; j is the electron current density.

[0109] In one embodiment, the radius statistics parameters include a radius mean parameter and a radius variance parameter. The first sequence calculation module 203 includes: a radius statistics parameter calculation module (not shown in the figure) and a radius variation sequence calculation module (not shown in the figure).

[0110] The radius statistics parameter calculation module is used to calculate the radius statistics parameter of the cathode half-point area of ​​the DC circuit according to the predetermined arc current amplitude; and its calculation formula is:

[0111] μ=2.071e 0.02221I -1.544e -0.1441I

[0112] σ=0.001615I0.1601

[0113] Where μ is the average radius; σ is the radius variance; I is the arc current amplitude; e is a natural constant, and its value is 2.718281828459045.

[0114] The radius change sequence calculation module is used to calculate the radius change sequence of the radius changing over time according to the radius statistical value parameter; and its calculation formula is:

[0115]

[0116] Where, f Rc (t) is the radius change sequence; μ is the mean radius; σ is the radius variance.

[0117] In one embodiment, the second sequence calculation module 205 includes: a discharge region area sequence calculation module (not shown in the figure) and an arc current sequence calculation module (not shown in the figure).

[0118] The discharge area sequence calculation module is used to calculate the discharge area sequence according to the radius change sequence; and its calculation formula is:

[0119]

[0120] Where, S(t) is the discharge area sequence; f Rc (t) is the radius variation sequence; π is the circumference of a circle, and its value is 3.1415926.

[0121] The arc current sequence calculation module is used to calculate the arc current sequence according to the discharge area sequence and the cathode spot electron current density; and its calculation formula is:

[0122] I F (t) = jS(t)

[0123] Where, I F (t) is the arc current sequence; S(t) is the discharge area sequence; j is the electron current density.

[0124] In order to facilitate understanding of the above technical solutions of the present invention, the above technical solutions of the present invention are described in detail below through specific application examples.

[0125] Taking a copper DC line with an arc current amplitude I of 10A as an example, the process of high-frequency series arc modeling method is as follows:

[0126] 1) The core material is copper. The metal surface work function is obtained as 4.5 eV by looking up Table 1. The cathode spot electron current density j is calculated using the thermal electron emission formula:

[0127]

[0128] Table 1 Emission surface work function table

[0129]

[0130]

[0131] 2) Set the current to 10A and calculate the radius R of the cathode spot area c The mean μ and variance σ of :

[0132] μ=2.071e 0.02221I -1.544e -0.1441I =2.2206

[0133] σ=0.001615I 0.1601 =0.0023

[0134] 3) Cathode spot area radius R c As time changes, the discharge area radius sequence f Rc (t) is shown in Table 2, the unit is μm, and its image is as follows Figure 3 shown.

[0135] Table 2 Discharge area radius sequence table

[0136]

[0137]

[0138]

[0139] The discharge area sequence S(t) is calculated as shown in Table 3, with the unit being μm. Figure 4 shown.

[0140] Table 3 Discharge area sequence table

[0141]

[0142]

[0143]

[0144] 4) Calculate the arc current sequence I with high frequency characteristics F (t), as shown in Table 4, the unit is μm, and its image is as follows Figure 5 shown.

[0145] Table 4 Arc current sequence table of high frequency characteristics

[0146]

[0147]

[0148]

[0149] In one embodiment, a computer device is provided. The computer device may be a server, and its internal structure diagram may be as follows: Figure 6 As shown. The computer device includes a processor, a memory, and a network interface connected via a system bus. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program, and a database. The internal memory provides an environment for the operation of the operating system and computer program in the non-volatile storage medium. The database of the computer device is used to store static information and dynamic information data. The network interface of the computer device is used to communicate with an external terminal via a network connection. When the computer program is executed by the processor, the steps of the above-mentioned method embodiment are implemented.

[0150] Those skilled in the art will understand that Figure 6 The structure shown in the figure is merely a block diagram of a portion of the structure related to the solution of the present invention and does not constitute a limitation on the computer device to which the solution of the present invention is applied. The specific computer device may include more or fewer components than shown in the figure, or combine certain components, or have a different component arrangement.

[0151] In one embodiment, a computer device is further provided, including a memory and a processor. The memory stores a computer program, and the processor implements the steps in the above method embodiment when executing the computer program.

[0152] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps in the above method embodiment are implemented.

[0153] Those skilled in the art will appreciate that all or part of the processes in the above-mentioned embodiment methods can be implemented by instructing the relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided by the present invention can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory or optical memory, etc. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM).

[0154] The present invention is not limited to the structures described above and shown in the drawings, and various modifications and changes can be made without departing from the scope thereof. The scope of the present invention is limited only by the appended claims.

Claims

1. A high-frequency series arc modeling method, characterized in that: include: Analyze the DC circuit and calculate the cathode spot electron current density of the DC circuit; Calculating a radius statistical value parameter of a cathode half-point region of a DC circuit according to a predetermined arc current amplitude; and calculating a radius variation sequence of a radius varying with time according to the radius statistical value parameter; Calculating a discharge region area sequence according to the radius variation sequence; and calculating an arc current sequence according to the discharge region area sequence and the cathode spot electron current density; Modeling a DC series arc according to the arc current sequence; Analyzing the DC circuit and calculating the cathode spot electron current density of the DC circuit includes: analyzing the DC circuit and calculating the cathode spot electron current density of the DC circuit using a thermal electron emission formula; Wherein, the thermal electron emission formula is: Where A c is the emission constant; T c is the cathode surface temperature; W is the emission surface work function; k B is the Boltzmann constant; j is the electron current density; According to the predetermined arc current amplitude, the calculation formula for the radius statistical value parameter of the cathode half-point area of ​​the DC circuit is: μ = 2.071e 0.02221I -1.544e -0.1441I ;σ=0.001615I 0.1601 ; In the formula, μ is the average radius; σ is the radius variance; I is the arc current amplitude; e is a natural constant, the value of which is 2.718281828459045; According to the radius statistical value parameter, the calculation formula for calculating the radius change sequence of the radius changing over time is: Where, f Rc (t) is the radius variation sequence; μ is the radius mean; σ is the radius variance; According to the radius variation sequence, the calculation formula for the discharge area sequence is: Where, S(t) is the discharge area sequence; f Rc (t) is the radius variation sequence; π is the circumference of a circle, and its value is 3.1415926; According to the discharge area sequence and the cathode spot electron current density, the arc current sequence is calculated as follows: F (t) = jS(t); where I F (t) is the arc current sequence; S(t) is the discharge area sequence; j is the electron current density.

2. A high-frequency series arc modeling method according to claim 1, characterized in that: The radius statistical value parameters include a radius mean parameter and a radius variance parameter.

3. A high-frequency series arc modeling system, characterized in that: include: The electron current density calculation module is used to analyze the DC circuit and calculate the cathode spot electron current density of the DC circuit; A first sequence calculation module is configured to calculate a radius statistical value parameter of a cathode half-point region of a DC circuit according to a predetermined arc current amplitude; and calculate a radius variation sequence in which the radius varies with time according to the radius statistical value parameter; A second sequence calculation module is configured to calculate a discharge region area sequence based on the radius variation sequence; and calculate an arc current sequence based on the discharge region area sequence and the cathode spot electron current density; A series arc modeling module, configured to model a DC series arc according to the arc current sequence; When analyzing the DC circuit and calculating the cathode spot electron current density of the DC circuit, the electron current density calculation module calculates the cathode spot electron current density of the DC circuit using the thermal electron emission formula; and the thermal electron emission formula is: Where A c is the emission constant; T c is the cathode surface temperature; W is the emission surface work function; k B is the Boltzmann constant; j is the electron current density; The first sequence calculation module includes: a radius statistics parameter calculation module for calculating the radius statistics parameter of the cathode half-point area of ​​the DC circuit according to the predetermined arc current amplitude; and its calculation formula is: μ = 2.071e 0.02221I -1.544e -0.1441I ;σ=0.001615I 0.1601 ; In the formula, μ is the average radius; σ is the radius variance; I is the arc current amplitude; e is a natural constant, the value of which is 2.718281828459045; The first sequence calculation module includes: a radius change sequence calculation module, which is used to calculate the radius change sequence of the radius changing over time according to the radius statistical value parameter; and its calculation formula is: Where, f Rc (t) is the radius variation sequence; μ is the radius mean; σ is the radius variance; The second sequence calculation module includes: a discharge region area sequence calculation module, which is used to calculate the discharge region area sequence according to the radius change sequence; and its calculation formula is: Where, S(t) is the discharge area sequence; f Rc (t) is the radius variation sequence; π is the circumference of a circle, and its value is 3.1415926; The second sequence calculation module includes: an arc current sequence calculation module, which is used to calculate the arc current sequence according to the discharge area sequence and the cathode spot electron current density; and its calculation formula is: I F (t) = jS(t); where I F (t) is the arc current sequence; S(t) is the discharge area sequence; j is the electron current density.

4. A high-frequency series arc modeling system according to claim 3, characterized in that: The radius statistical value parameters include a radius mean parameter and a radius variance parameter.

5. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to claim 1 are implemented.

6. A computer device according to claim 5, characterized in that: The radius statistical value parameters include a radius mean parameter and a radius variance parameter.

7. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to claim 1 are implemented.

8. The computer-readable storage medium according to claim 7, wherein: The radius statistical value parameters include a radius mean parameter and a radius variance parameter.

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