Micro-component structure and display device

Abstract

This invention provides a micro-component structure and a display device. The micro-component structure includes a body, two electrodes, two solder patterns, and a limiting structure. The two electrodes are disposed on one side of the body. The two solder patterns are respectively disposed on the two electrodes. The limiting structure protrudes relative to the body, wherein the limiting structure surrounds one electrode and the solder pattern thereon, and at least a portion of the limiting structure is separated from the surrounded solder pattern by a gap.

Description

Technical Field

[0001] This invention relates to a micro-component structure and a display device. Background Technology

[0002] When bonding electronic components to circuit boards, soldering materials are needed as a medium for joining them. For example, reflow soldering is a commonly used bonding technique. However, because the soldering material temporarily melts and overflows during the process, especially for extremely small micro-component structures, overflow can easily cause short circuits in electrodes or other circuits. Summary of the Invention

[0003] The present invention provides a micro-component structure and a display device that helps to improve the short circuit problem caused by solder material overflow.

[0004] According to an embodiment of the present invention, the micro-component structure includes a body, two electrodes, two solder patterns, and a limiting structure. The two electrodes are disposed on one side of the body. The two solder patterns are respectively disposed on the two electrodes. The limiting structure protrudes relative to the body, wherein the limiting structure surrounds one electrode and the solder pattern thereon, and at least a portion of the limiting structure is separated from the surrounded solder pattern by a gap.

[0005] According to an embodiment of the present invention, a display device includes a circuit board and a plurality of micro-component structures. The micro-component structures are disposed on and electrically connected to the circuit board. Each micro-component structure includes a body, two electrodes, two solder patterns, and a limiting structure. The two electrodes are disposed on the side of the body facing the circuit board. The two solder patterns are respectively disposed on the two electrodes and located between the two electrodes and the circuit board. The limiting structure protrudes relative to the body, wherein the limiting structure surrounds one electrode and the solder pattern thereon, and at least a portion of the limiting structure is separated from the surrounded solder pattern by a gap.

[0006] To make the above features and advantages of the present invention more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings. Attached Figure Description

[0007] The accompanying drawings are included to further illustrate the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

[0008] Figure 1A , Figure 2A , Figure 3A as well as Figures 4 to 12 These are partial cross-sectional schematic diagrams of micro-component structures according to various embodiments of the present invention;

[0009] Figure 1B , Figure 2B as well as Figure 3B These are partial top views of micro-component structures according to various embodiments of the present invention, wherein... Figure 1B , Figure 2B as well as Figure 3B The cross-sectional diagrams of section lines I-I', II-II', and III-III' can be found by referring to [reference needed]. Figure 1A , Figure 2A as well as Figure 3A ;

[0010] Figure 13 This is a partial cross-sectional schematic diagram of a display device according to an embodiment of the present invention.

[0011] Explanation of icon numbers

[0012] 1, 1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 1I, 1J, 1K: Micro-component structures;

[0013] 2: Circuit board;

[0014] 10: Ontology;

[0015] 11, 12: Electrodes;

[0016] 13, 14: Solder patterns;

[0017] 15: Restricted structure;

[0018] 16, 17: Eutectic barrier pattern;

[0019] 18: Insulation layer;

[0020] 100: Type I semiconductor layer;

[0021] 101: Emissive layer;

[0022] 102: Type II semiconductor layer;

[0023] 103: Current diffusion layer;

[0024] A: Opening;

[0025] B13: Bottom;

[0026] DD: Display device;

[0027] E15: End;

[0028] G: Gap;

[0029] GR: Groove;

[0030] H15: Height of the protrusion;

[0031] P1, P2: Connecting pads;

[0032] P13, P15: Orthographic projection;

[0033] PP: protruding part;

[0034] S: Surface;

[0035] T13: Top;

[0036] TH13: Thickness;

[0037] WG: Width;

[0038] I-I', II-II', III-III': sectional lines. Detailed Implementation

[0039] The directional terms used herein, such as "up," "down," "front," "back," "left," and "right," are only for reference to the accompanying drawings. Therefore, the directional terms used are for illustrative purposes and not for limiting the invention. Furthermore, the phrase "one element / film layer disposed on (or above) another element / film layer" can encompass the case where the element / film layer is directly disposed on (or above) the other element / film layer and the two elements / film layers are in direct contact; and the case where the element / film layer is indirectly disposed on (or above) the other element / film layer and one or more elements / film layers exist between the two elements / film layers.

[0040] In the accompanying drawings, the figures illustrate general features of the methods, structures, and / or materials used in specific embodiments. However, these figures should not be construed as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative dimensions, thicknesses, and locations of various films, regions, or structures may be reduced or enlarged.

[0041] Figure 1A , Figure 2A , Figure 3A as well as Figures 4 to 12 These are partial cross-sectional schematic diagrams of micro-component structures according to various embodiments of the present invention. Figure 1B , Figure 2B as well as Figure 3A These are partial top views of micro-component structures according to various embodiments of the present invention, wherein... Figure 1B , Figure 2B as well as Figure 3B The cross-sectional diagrams of section lines I-I', II-II', and III-III' can be found by referring to [reference needed]. Figure 1A , Figure 2A as well as Figure 3A . Figure 13This is a partial cross-sectional schematic diagram of a display device according to an embodiment of the present invention.

[0042] exist Figures 1A to 13 In the embodiments described herein, the same or similar elements will be referred to by the same or similar reference numerals, and their descriptions will be omitted. Furthermore, features in different embodiments may be combined with each other without conflict, and simple equivalent changes and modifications made in accordance with this specification or claims are still within the scope of this patent.

[0043] Please refer to Figure 1A as well as Figure 1B The micro-component structure 1 may include a body 10, two electrodes 11, 12, two solder patterns 13, 14, and a limiting structure 15, but is not limited thereto.

[0044] In some embodiments, the micro-element structure 1 is a micro-light-emitting diode structure, and the body 10 may include a first type semiconductor layer 100, a light-emitting layer 101, and a second type semiconductor layer 102, but is not limited thereto. The light-emitting layer 101 is located between the first type semiconductor layer 100 and the second type semiconductor layer 102, and the second type semiconductor layer 102 is located between the light-emitting layer 101 and the two solder patterns 13 and 14.

[0045] One of the first type semiconductor layer 100 and the second type semiconductor layer 102 can be a P-type semiconductor layer, and the other of the first type semiconductor layer 100 and the second type semiconductor layer 102 can be an N-type semiconductor layer. The materials of the first type semiconductor layer 100 and the second type semiconductor layer 102 can include group III-V materials, such as gallium nitrides and their alloys (e.g., gallium nitride, aluminum nitride, indium nitride, indium gallium nitride, aluminum gallium nitride, aluminum indium gallium nitride, etc.), arsenides and their alloys (e.g., gallium arsenide, aluminum arsenide, indium arsenide, indium gallium arsenide, aluminum gallium arsenide, aluminum indium gallium arsenide, etc.), phosphides and their alloys (e.g., gallium phosphide, aluminum phosphide, indium phosphide, indium gallium phosphide, aluminum gallium phosphide, aluminum indium gallium phosphide, etc.), but are not limited thereto. The light-emitting layer 101 can be a multiple quantum well (MQW) structure, but is not limited thereto.

[0046] In some embodiments, the body 10 may optionally include a current diffusion layer 103, and a second type semiconductor layer 102 is located between the light-emitting layer 101 and the current diffusion layer 103. The material of the current diffusion layer 103 may include a transparent conductive material, such as a metal oxide, but is not limited thereto. The metal oxide may include indium tin oxide (ITO), but is not limited thereto.

[0047] Two electrodes 11 and 12 are disposed on one side of the body 10. For example, electrode 11 is disposed on the current diffusion layer 103 and electrically coupled to the second type semiconductor layer 102 through the current diffusion layer 103; electrode 12 is disposed on the first type semiconductor layer 100 and electrically coupled to the first type semiconductor layer 100. The materials of electrodes 11 and 12 may include metals, alloys, or combinations thereof, but are not limited thereto.

[0048] In some embodiments, the first type semiconductor layer 100 can be exposed by etching through a via through the current diffusion layer 103, the second type semiconductor layer 102, and the light-emitting layer 101, and the electrode 12 then contacts the first type semiconductor layer 100 through the via. Furthermore, the top surfaces of the electrode 11 and the electrode 12 can be flush with each other based on requirements (e.g., direct bonding), but this disclosure is not limiting. In other embodiments, such as... Figure 12 As shown, the first type semiconductor layer 100 can be exposed by etching the platform to achieve electrical coupling between the first type semiconductor layer 100 and the electrode 12.

[0049] Two solder patterns 13 and 14 are respectively disposed on two electrodes 11 and 12. The materials of solder patterns 13 and 14 may include tin or other suitable conductive materials.

[0050] The limiting structure 15 protrudes relative to the body 10, in Figure 1A In this configuration, the limiting structure 15 surrounds one of the electrodes (electrode 11) and the solder pattern 13 located thereon. For example, the orthographic projection P13 of the surrounded solder pattern 13 onto the body 10 is completely surrounded by the orthographic projection P15 of the limiting structure 15 onto the body 10 (e.g., Figure 1B (As shown).

[0051] Furthermore, at least a portion of the restrictive structure 15 is separated from the surrounding solder pattern 13 by a gap G. For example, viewed from a cross-sectional view of the micro-component structure 1, as... Figure 1A As shown, at least a portion of the inner wall of the limiting structure 15 (i.e. the surface of the limiting structure 15 facing the surrounding solder pattern 13) is separated from the surrounding solder pattern 13. Figure 1A The illustration schematically shows the inner sidewall of the limiting structure 15 completely separated from the surrounding solder pattern 13, but this disclosure is not limited thereto. In other embodiments, such as Figure 2A As shown, the inner wall of the restricting structure 15 can partially contact and partially separate from the solder pattern 13. For example, the lower region of the inner wall of the restricting structure 15 on the left side can contact the solder pattern 13, while the upper region of the inner wall is separated from the solder pattern 13. On the other hand, at least a portion of the inner wall of the restricting structure 15 is separated from the surrounding solder pattern 13. Figure 1BAs shown in the top view, the inner wall of the confinement structure 15 is completely separated from the surrounding solder pattern 13. In other embodiments, such as Figure 2B As shown, at least one side of the inner sidewall of the limiting structure 15 can contact the solder pattern 13, and the remaining side of the inner sidewall of the limiting structure 15 can be separated from the solder pattern 13.

[0052] By limiting the structure 15 around the electrode 11 and the solder pattern 13 located thereon, the overflow range of the solder pattern 13 during the reflow soldering process can be limited, preventing the overflowing solder pattern 13 from contacting the overflowing solder pattern 14 and causing a short circuit. In addition, by maintaining a distance (i.e., gap G) between the limiting structure 15 and the solder pattern 13, the overflowing solder pattern 13 can be effectively solidified or reduced from overflowing the area enclosed by the limiting structure 15, which helps to further reduce the probability of short circuit.

[0053] In some embodiments, for reliability or process considerations, the end E15 of the limiting structure 15 is designed to be located between the top T13 and the bottom B13 of the solder pattern 13. The end E15 of the limiting structure 15 refers to the end of the limiting structure 15 furthest from the body 10. The top T13 of the solder pattern 13 refers to the surface of the solder pattern 13 furthest from the body 10, and the bottom B13 of the solder pattern 13 refers to the surface of the solder pattern 13 closest to the body 10. The end E15 of the limiting structure 15 being higher than the bottom B13 of the solder pattern 13 can reduce the probability of overflow, while the end E15 being lower than the top T13 of the solder pattern 13 can prevent damage such as compression deformation or breakage of the limiting structure 15 when the micro-component structure 1 is bonded to the circuit board (not shown).

[0054] In some embodiments, the ratio of the width WG of the gap G to the thickness TH13 of the surrounding solder pattern 13 (such as the thickness at the protrusion PP of the solder pattern 13) is greater than or equal to 0.25. Here, the width WG and the thickness TH13 can be considered as factors related to the accommodating space of the gap G and the volume of the solder pattern 13, respectively. In other words, a ratio greater than 0.25 indicates that the gap G has a relatively large space to accommodate the solder pattern 13, which can better prevent the solder pattern 13 from overflowing its confined area. Furthermore, the protrusion height H15 of the confining structure 15 relative to the body 10 can be from 0.1 μm to 0.5 μm, for example, greater than 0.3 μm. However, the protrusion height H15 can be varied according to other design parameters (such as the thickness TH13 of the solder pattern 13, the material or manufacturing method of the confining structure 15, etc.), and is not limited to the above.

[0055] In addition, although Figure 1AA limiting structure 15 is schematically shown, surrounding the electrode 11, the eutectic barrier pattern 16, and the solder pattern 13. The cross-sectional shape of the limiting structure 15 is rectangular. However, it should be understood that design parameters such as the number of limiting structures 15, their placement, or their cross-sectional shape can be changed according to actual needs. For example, in other embodiments, there may be multiple limiting structures 15, and these multiple limiting structures 15 may surround multiple electrode patterns respectively. For example, the limiting structure 15 may also surround the electrode 12, the eutectic barrier pattern 17, and the solder pattern 14. In addition, the cross-sectional shape of the limiting structure 15 may include a curved, triangular, quadrilateral, rounded convex, folded, or irregular shape. A quadrilateral may include a rectangle, a square, or a trapezoid, but is not limited thereto.

[0056] Furthermore, depending on different requirements, the micro-component structure 1 may selectively include other components or films. For example, in some embodiments, although not shown, the micro-component structure 1 may be an epitaxial structure formed on an epitaxial substrate. The substrate material may include sapphire, gallium nitride, gallium arsenide, silicon, silicon germanium, glass, ceramic, silicon carbide, aluminum nitride, or other suitable materials. Alternatively, after the aforementioned components and films are formed on the substrate, the substrate may be selectively removed, for example, by means of a laser lift-off (LLO) process to separate the substrate from the components and films thereon.

[0057] In some embodiments, the micro-component structure 1 may include two eutectic barrier patterns (such as eutectic barrier pattern 16 and eutectic barrier pattern 17), respectively located between one electrode 11 and the solder pattern 13 thereon, and between another electrode 12 and the solder pattern 14 thereon. The two electrodes can be separated from the two solder patterns by being enclosed by the two eutectic barrier patterns, thereby avoiding eutectic phenomena generated during subsequent reflow soldering processes, which helps to improve the electrical performance and structural reliability of the micro-component structure 1. The materials of eutectic barrier pattern 16 and eutectic barrier pattern 17 may include nickel, platinum, titanium, or alloys thereof, or transparent conductive materials, but are not limited thereto.

[0058] In some embodiments, two electrodes, two eutectic barrier patterns, and two solder patterns may be conformally stacked sequentially on the body 10. Since the electrodes 11 and 12 are partially etched micro-element structures 1 and thus have a recessed shape, each solder pattern will form a groove GR on the side away from the body 10 due to conformal stacking. This means that a portion of the solder pattern is accommodated within the grooves of the electrodes 11 and 12, thereby reducing the degree of overflow.

[0059] Each solder pattern may also have a protrusion PP surrounding the groove GR. The gap G located around the solder pattern 13 is a recessed area relative to the protrusion PP. This recessed area can accommodate a portion of the solder when the solder pattern overflows, thereby reducing the degree of overflow.

[0060] In some embodiments, the micro-component structure 1 may include an insulating layer 18. The insulating layer 18, for example, covers the body 10 and has two openings A. Two electrodes (such as electrode 11 and electrode 12) are disposed on the insulating layer 18 and connected to the body 10 through the two openings A, respectively. In some embodiments, a restraining structure 15 is disposed on the insulating layer 18, and the restraining structure 15 and the insulating layer 18 may be made of the same material or a different material. For example, the material of the insulating layer 18 may include silicon oxide (Si). x O y The material may be titanium dioxide or titanium dioxide, but is not limited thereto. When the limiting structure 15 and the insulating layer 18 are made of the same material, the limiting structure 15 and the insulating layer 18 may be integrally formed, but is not limited thereto.

[0061] Please refer to Figure 2A as well as Figure 2B Micro-component structure 1A and Figure 1A as well as Figure 1B The main differences of the micro-component structure 1A are described below. In micro-component structure 1A, at least one side of the inner sidewall of the limiting structure 15 is in contact with the solder pattern 13, and the remaining sides of the inner sidewall of the limiting structure 15 are separated from the solder pattern 13. In any embodiment disclosed herein, the relative arrangement between the limiting structure and the surrounding solder pattern may be changed accordingly, and will not be repeated below.

[0062] Please refer to Figure 3A as well as Figure 3B Micro-component structure 1B and Figure 1A as well as Figure 1B The main differences of the micro-component structure 1B are described below. The micro-component structure 1B includes two confinement structures 15, which surround solder pattern 13 and solder pattern 14, respectively. The number of confinement structures 15 can be varied according to different requirements. In any embodiment disclosed herein, the number of confinement structures 15 may be one or two, which will not be repeated below.

[0063] Please refer to Figure 4 Micro-component structure 1C and Figure 3A The main differences in the micro-component structure 1B are explained below. Figure 3A In the micro-element structure 1B, the limiting structure 15 is disposed on the insulating layer 18 and maintains a distance from the surrounding eutectic barrier pattern 16 (or eutectic barrier pattern 17); while Figure 4In the micro-component structure 1C, solder pattern 13 (or solder pattern 14) exposes the peripheral portion of eutectic barrier pattern 16 (or eutectic barrier pattern 17) located thereunder, and limiting structure 15 is disposed on the peripheral portion of eutectic barrier pattern 16 (or eutectic barrier pattern 17) and protrudes relative to the peripheral portion. For example... Figure 4 In one embodiment, the limiting structure 15 and the eutectic barrier pattern 16 (or eutectic barrier pattern 17) can be integrally formed, that is, the limiting structure 15 and the eutectic barrier pattern 16 (or eutectic barrier pattern 17) can have the same material. In other embodiments, the limiting structure 15 and the eutectic barrier pattern 16 (or eutectic barrier pattern 17) can have different materials.

[0064] Please refer to Figure 5 Micro-component structure 1D and Figure 4 The main differences in the micro-component structure of IC are explained below. Figure 4 In the micro-component structure 1C, solder patterns 13 and 14 are separated by two confinement structures 15. Figure 5 In the micro-component structure 1D, solder pattern 13 and solder pattern 14 are separated by a limiting structure 15, that is, there is only one barrier (limiting structure 15) between solder pattern 13 and solder pattern 14.

[0065] Please refer to Figure 6 Micro-component structure 1E and Figure 4 The main differences of the micro-element structure 1C are explained below. In the micro-element structure 1E, the cross-sectional shape of the confinement structure 15 is, for example, a bent angle.

[0066] Please refer to Figure 7 Micro-element structure 1F and Figure 4 The main differences of the micro-element structure 1C are explained below. In the micro-element structure 1F, the cross-sectional shape of the confinement structure 15 is, for example, trapezoidal. Furthermore, the confinement structure 15 and the eutectic barrier pattern 16 (or eutectic barrier pattern 17) are made of different materials, for example.

[0067] Please refer to Figure 8 Micro-component structure 1G and Figure 3A The main differences of the micro-element structure 1B are explained below. In the micro-element structure 1G, the cross-sectional shape of the confinement structure 15 is, for example, triangular.

[0068] Please refer to Figure 9 Micro-element structure 1H and Figure 8 The main differences of the micro-element structure 1G are explained below. In the micro-element structure 1H, the cross-sectional shape of the confinement structure 15 is, for example, a circular convex shape.

[0069] Please refer to Figure 10 Micro-component structure 1I and Figure 6 The main differences of the micro-element structure 1E are explained below. In the micro-element structure 1I, the cross-sectional shape of the confinement structure 15 is, for example, a folded shape.

[0070] Please refer to Figure 11 Micro-component structure 1J and Figure 7 The main differences of the micro-element structure 1F are explained below. In the micro-element structure 1J, the cross-sectional shape of the confinement structure 15 is, for example, irregular.

[0071] Please refer to Figure 12 Micro-component structure 1K and Figure 4 The main differences of the micro-device structure 1C are explained below. In the micro-device structure 1K, the first type semiconductor layer 100 is exposed by platform etching to achieve electrical coupling between the first type semiconductor layer 100 and the electrode 12, but this is not a limitation. Any embodiment disclosed herein may also be modified as described above, which will not be repeated below.

[0072] Please refer to Figure 13 The display device DD may include a circuit board 2 and a micro-component structure 1. The circuit board 2 may include a complementary metal-oxide-semiconductor (CMOS) substrate, a liquid crystal on silicon (LCOS) substrate, a thin film transistor (TFT) substrate, or other substrates with operating circuits, without limitation. In addition, the circuit board 2 may include pads P1 and P2, but is not limited thereto.

[0073] The micro-component structure 1 is disposed on and electrically connected to the circuit board 2. For example, solder patterns 13 and 14 in the micro-component structure 1 can be soldered to pads P1 and P2 in the circuit board 2 respectively by a reflow soldering process. In this architecture, two electrodes 11 and 12 are disposed on the side of the body 10 facing the circuit board 2, and the two solder patterns 13 and 14 are located between the two electrodes and the circuit board 2.

[0074] In other embodiments, although not shown, the micro-element structure 1 in the display device DD may be replaced with the micro-element structure of any of the foregoing embodiments, which will not be repeated here.

[0075] Furthermore, although 13 schematically shows a micro-component structure, the display device DD may include multiple micro-component structures, including but not limited to blue, red, or green micro-light-emitting diode structures.

[0076] In summary, in the embodiments of the present invention, by limiting the structure surrounding the electrode and the solder pattern thereon, the overflow range of the solder pattern during the reflow soldering process can be limited, preventing the overflowing solder patterns from contacting each other and causing a short circuit. Furthermore, by maintaining a distance (gap) between the limiting structure and the solder pattern, the overflowing solder pattern can be effectively solidified or reduced, thereby further reducing the probability of a short circuit.

[0077] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A micro-component structure, characterized in that, include: ontology; Two electrodes are disposed on one side of the main body; Two solder patterns are respectively disposed on the two electrodes; Two limiting structures protrude relative to the body and do not contact each other, wherein each limiting structure surrounds one of the electrodes and the solder pattern thereon, and at least a portion of each limiting structure is separated from the surrounded solder pattern by a gap; as well as Two eutectic barrier patterns are respectively located between one electrode and the solder pattern thereon, and between the other electrode and the solder pattern thereon, with each electrode being closed off from the solder pattern by the corresponding eutectic barrier pattern. Each of the solder patterns exposes the peripheral portion of the eutectic barrier pattern located beneath it; Each of the aforementioned limiting structures is disposed on the peripheral portion of the corresponding eutectic barrier pattern and protrudes relative to the peripheral portion; Two of the aforementioned limiting structures and two of the aforementioned eutectic barrier patterns are made of metallic materials, and the peripheral portion of each of the aforementioned limiting structures and the corresponding eutectic barrier pattern is integrally formed.

2. The micro-component structure according to claim 1, characterized in that, Also includes: An insulating layer covers the body and has two openings, wherein two electrodes are disposed on the insulating layer and are connected to the body through the two openings respectively, and the two electrodes are closed by the insulating layer.

3. The micro-component structure according to claim 1, characterized in that, Also includes: An insulating layer covers the body and has two openings, wherein two electrodes are disposed on the insulating layer and are respectively connected to the body through the two openings, and the limiting structure is disposed on the insulating layer.

4. The micro-component structure according to claim 3, characterized in that, The limiting structure and the insulating layer are made of different materials.

5. The micro-component structure according to claim 1, characterized in that, Also includes: An insulating layer covers the body and has two openings, wherein two electrodes are disposed on the insulating layer and are respectively connected to the body through the two openings; as well as Two eutectic barrier patterns, wherein the two electrodes, the two eutectic barrier patterns, and the two solder patterns are sequentially and conformally stacked on the body, and each solder pattern has a groove on the side away from the body.

6. The micro-component structure according to claim 1, characterized in that, The end of the limiting structure is located between the top and bottom of the solder pattern.

7. The micro-component structure according to claim 1, characterized in that, The orthographic projection of the surrounding solder pattern onto the body is completely surrounded by the orthographic projection of the limiting structure onto the body.

8. The micro-component structure according to claim 1, characterized in that, The ratio of the width of the gap to the thickness of the surrounding solder pattern is greater than or equal to 0.

25.

9. The micro-component structure according to claim 1, characterized in that, The protrusion height of the limiting structure relative to the body is 0.1 μm to 0.5 μm.

10. The micro-component structure according to claim 1, characterized in that, The cross-sectional shape of the limiting structure includes a curved shape, a triangle, a quadrilateral, a rounded convex shape, or a folded angle shape.

11. A display device, characterized in that, include: Circuit board; as well as Multiple micro-component structures are disposed on and electrically connected to the circuit board, wherein each of the micro-component structures includes: ontology; Two electrodes are disposed on the side of the body facing the circuit board; Two solder patterns are respectively disposed on the two electrodes and located between the two electrodes and the circuit board; and Two limiting structures, protruding relative to the body and not in contact with each other, wherein each limiting structure surrounds one of the electrodes and the solder pattern thereon, and at least a portion of each limiting structure is separated from the surrounded solder pattern by a gap; and Two eutectic barrier patterns are respectively located between one electrode and the solder pattern thereon, and between the other electrode and the solder pattern thereon, with each electrode being closed off from the solder pattern by the corresponding eutectic barrier pattern. Each of the solder patterns exposes the peripheral portion of the eutectic barrier pattern located beneath it; Each of the aforementioned limiting structures is disposed on the peripheral portion of the corresponding eutectic barrier pattern and protrudes relative to the peripheral portion; Two of the aforementioned limiting structures and two of the aforementioned eutectic barrier patterns are made of metallic materials, and the peripheral portion of each of the aforementioned limiting structures and the corresponding eutectic barrier pattern is integrally formed.

12. The display device according to claim 11, characterized in that, The limiting structure has an end, the solder pattern has a top away from the body and a bottom near the body, and the end is located between the top and the bottom.

13. The display device according to claim 11, characterized in that, The orthographic projection of the limiting structure onto the body completely covers the orthographic projection of the surrounding solder pattern onto the body.

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