Method for manufacturing an optical communication module

Abstract

The present invention provides a manufacturing method of optical communication module, which uses photoelectric conversion element to replace the function of high-precision mask. The present invention solves the problem of high-precision mask design and increased production cost in the current optical etching method of manufacturing optical communication module.

Description

Technical Field

[0001] This invention relates to the field of optical communication, and more particularly to a method for manufacturing an optical communication module. Background Technology

[0002] An optical communication module is a communication module that performs photoelectric conversion. It can be divided into a transmitter and a receiver. The transmitter converts electrical signals into optical signals, while the receiver converts optical signals back into electrical signals. The transmitter can be further divided into a transmitter module and an optical fiber, with the transmitter module coupled to the optical fiber. The transmitter module is then coupled to a printed circuit board (PCB) to receive electrical signals transmitted from the PCB and convert them back into optical signals. The optical fiber is used to transmit the optical signals generated by the transmitter module. Similarly, the receiver can be further divided into a receiver module and an optical fiber, with the receiver module coupled to the optical fiber. The receiver module is also coupled to a PCB to receive optical signals transmitted from the optical fiber and convert them back into electrical signals.

[0003] Current coupling technologies for optical communication modules and optical fibers can be divided into direct coupling and indirect coupling. Direct coupling technology allows the optical fiber to be directly coupled to the optical communication module. The optical communication module includes a dielectric, a photoelectric conversion element, and a metal circuit layer. The photoelectric conversion element is located in the dielectric, and the metal circuit layer is coupled to the photoelectric conversion element. The dielectric has an opening to expose the upper surface of the photoelectric conversion element, and the upper surface of the photoelectric conversion element includes an aperture. The optical signal generated by the photoelectric conversion element is output through the aperture. Therefore, when the optical fiber is inserted into the opening in the dielectric, it can receive the optical signal transmitted by the photoelectric conversion element through the aperture and the output port, achieving the effect of direct coupling. The manufacturing methods of the optical communication module generally employ photolithography, wet etching, or laser ablation methods. The photoelectric conversion element can be a laser component or a light receiving component.

[0004] One current method for manufacturing optical communication modules using photolithography involves first placing photoelectric conversion elements on a substrate, then coating a dielectric material around and on the upper surface of the photoelectric conversion elements to encapsulate them. The dielectric material can be either a positive or negative photoresist. Next, a high-precision photomask is used to precisely position the photoelectric conversion elements. An exposure light source then exposes the dielectric material from above the high-precision photomask. If the dielectric material is a positive photoresist, no cross-linking reaction occurs in the exposed area; if it is a negative photoresist, a cross-linking reaction occurs. The high-precision photomask refers to a mask with a precision of 1μm. Its function is to prevent cross-linking of the dielectric material above the photoelectric conversion elements. During development, the developer dissolves the uncross-linked dielectric material above the photoelectric conversion elements, exposing the upper surface of the elements. A metal circuit layer is then formed on the upper surface of the photoelectric conversion elements, coupling the elements to the substrate. The intermediate metal circuit layer is used to couple with the printed circuit board, so that the electrical signals transmitted by the printed circuit board can be transmitted to the photoelectric conversion element. Then, a spacer is placed on the upper surface of the photoelectric conversion element, and then a dielectric is coated on the upper surface of the photoelectric conversion element, covering part of the spacer and the metal circuit layer. Then, a high-precision photomask is used to accurately position the photoelectric conversion element. The exposure light source exposes the dielectric from above the high-precision photomask to ensure that the dielectric on the upper surface of the photoelectric conversion element will not undergo a cross-linking reaction. Therefore, during development, the dielectric will form an opening to expose the upper surface of the photoelectric conversion element and the spacer. The optical fiber can then be directly coupled through the insertion opening. When the photoelectric conversion element is a laser component, the optical fiber can receive the light signal transmitted by the laser component. When the photoelectric conversion element is a light receiving component, the light receiving component can receive the light signal transmitted by the optical fiber. The spacer separates the optical fiber and the photoelectric conversion element to avoid direct contact between the optical fiber and the photoelectric conversion element.

[0005] However, the current method of manufacturing optical communication modules using photolithography requires the use of high-precision photomasks to accurately position the photoelectric conversion elements. These high-precision photomasks need to be designed according to the shape and size of the photoelectric conversion elements, which results in production costs in terms of time and money. Summary of the Invention

[0006] One objective of this invention is to improve the current method of manufacturing optical communication modules using photolithography, which requires the use of high-precision photomasks for exposure positioning, thus increasing production costs.

[0007] Based on the objective of this invention, a method for manufacturing an optical communication module is provided. The steps sequentially include providing a light-transmitting substrate, a first metal circuit layer, and a photoelectric conversion element. The first metal circuit layer is formed on a portion of the upper surface of the light-transmitting substrate, and the photoelectric conversion element is disposed above the light-transmitting substrate, with its lower surface coupled to the first metal circuit layer. A first negative photoresist is coated on the area surrounding the photoelectric conversion element and on its upper surface, wherein the area surrounding the photoelectric conversion element includes a portion of the first metal circuit layer. The first negative photoresist is exposed from below the light-transmitting substrate upwards. The first negative photoresist is developed to form a first patterned photoresist layer, which is formed on the area surrounding the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element. A second metal circuit layer is formed on a portion of the upper surface of the photoelectric conversion element, the upper surface of the first patterned photoresist layer, and the side surface of the first patterned photoresist layer. The second metal circuit layer is coupled to the photoelectric conversion element. The upper surface of the component is replaced; a second negative photoresist is fully coated to cover the upper surface of the first patterned photoresist layer, the exposed portion of the upper surface of the photoelectric conversion element, and a portion of the second metal circuit layer; the first patterned photoresist layer and the second negative photoresist are exposed from below the light-transmitting substrate upwards; the second negative photoresist is developed to form a second patterned photoresist layer, and the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, the opening exposing the exposed portion of the upper surface of the photoelectric conversion element; in one embodiment of the present invention, after completing each step, the step of "removing the light-transmitting substrate" is further included; in one embodiment of the present invention, after completing the step of "forming a second metal circuit layer on a portion of the upper surface of the photoelectric conversion element, the upper surface of the first patterned photoresist layer, and the side surface of the first patterned photoresist layer, with the second metal circuit layer coupled to the upper surface of the photoelectric conversion element", the step of "forming a spacer on another portion of the upper surface of the photoelectric conversion element" is further included.

[0008] Based on the objective of this invention, a method for manufacturing an optical communication module is provided. The steps sequentially include providing a light-transmitting substrate, a first metal circuit layer, and a photoelectric conversion element. The first metal circuit layer is formed on a portion of the upper surface of the light-transmitting substrate, and the photoelectric conversion element is disposed above the light-transmitting substrate, with its lower surface coupled to the first metal circuit layer. A first negative photoresist is coated on the area surrounding the photoelectric conversion element and on its upper surface, wherein the area surrounding the photoelectric conversion element includes a portion of the first metal circuit layer. The first negative photoresist is exposed from below the light-transmitting substrate upwards. The first negative photoresist is developed to form a first patterned photoresist layer, which is formed on the area surrounding the photoelectric conversion element and exposes its upper surface. A second negative photoresist is then applied to cover the entire surface. The upper surface of the first patterned photoresist layer and the exposed portion of the upper surface of the photoelectric conversion element are exposed; the first patterned photoresist layer and the second negative photoresist are exposed from below the light-transmitting substrate upwards; the second negative photoresist is developed to form a second patterned photoresist layer, and the second patterned photoresist layer forms an opening in the area above the photoelectric conversion element, the opening exposing the exposed portion of the upper surface of the photoelectric conversion element; in one embodiment of the present invention, after completing each step, the step of "removing the light-transmitting substrate" is further included; in one embodiment of the present invention, after completing the step of "developing the first negative photoresist to form a first patterned photoresist layer, the first patterned photoresist layer being formed in the area surrounding the photoelectric conversion element and exposing the upper surface of the photoelectric conversion element", the step of "forming a spacer in a portion of the upper surface of the photoelectric conversion element" is further included.

[0009] Based on the objective of this invention, a method for manufacturing an optical communication module is provided. The steps sequentially include: providing a light-transmitting substrate and a photoelectric conversion element, the photoelectric conversion element being disposed on the upper surface of the light-transmitting substrate; coating a first negative photoresist around the photoelectric conversion element and on the upper surface of the photoelectric conversion element; exposing the first negative photoresist from below the light-transmitting substrate upwards; developing the first negative photoresist to form a first patterned photoresist layer, the first patterned photoresist layer being formed around the photoelectric conversion element and exposing the upper surface of the photoelectric conversion element; forming a second metal circuit layer on a portion of the upper surface of the photoelectric conversion element, the upper surface of the first patterned photoresist layer, and the side surface of the first patterned photoresist layer, the second metal circuit layer being coupled to the upper surface of the photoelectric conversion element; and fully coating the upper surface of the first patterned photoresist layer and the photoelectric conversion element with a second negative photoresist. The exposed portion of the upper surface and a portion of the second metal circuit layer; exposing the first patterned photoresist layer and the second negative photoresist from below the light-transmitting substrate upwards; developing the second negative photoresist to form the second patterned photoresist layer, and the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, the opening exposing the exposed portion of the upper surface of the photoelectric conversion element; in one embodiment of the present invention, after completing each step, the step of "removing the light-transmitting substrate" is further included; in one embodiment of the present invention, after completing the step of "forming the second metal circuit layer on a portion of the upper surface of the photoelectric conversion element, the upper surface of the first patterned photoresist layer and the side surface of the first patterned photoresist layer, and the second metal circuit layer coupled to the upper surface of the photoelectric conversion element", the step of "forming a spacer on another portion of the upper surface of the photoelectric conversion element" is further included.

[0010] Based on the objective of this invention, a method for manufacturing an optical communication module is provided. The steps sequentially include: providing a light-transmitting substrate and a photoelectric conversion element, the photoelectric conversion element being disposed above the light-transmitting substrate; coating a first negative photoresist around the photoelectric conversion element and on its upper surface; exposing the first negative photoresist from below the light-transmitting substrate upwards; developing the first negative photoresist to form a first patterned photoresist layer, the first patterned photoresist layer being formed around the photoelectric conversion element and exposing its upper surface; forming a second metal circuit layer on a portion of the upper surface of the photoelectric conversion element, the upper surface of the first patterned photoresist layer, and the side surface of the first patterned photoresist layer, the second metal circuit layer being coupled to the upper surface of the photoelectric conversion element; and fully coating the upper surface of the photoelectric conversion element with a second negative photoresist to cover the upper surface of the first patterned photoresist layer and the upper surface of the photoelectric conversion element. The exposed portion of the surface and a portion of the second metal circuit layer; exposing the first patterned photoresist layer and the second negative photoresist from below the light-transmitting substrate upwards; developing the second negative photoresist to form the second patterned photoresist layer, and the second patterned photoresist layer forms an opening in the area above the photoelectric conversion element, the opening exposing the exposed portion of the upper surface of the photoelectric conversion element; removing the light-transmitting substrate; forming the first metal circuit layer, the first metal circuit layer being coupled to the lower surface of the photoelectric conversion element; in one embodiment of the present invention, after completing the steps of "forming the second metal circuit layer in a portion of the upper surface of the photoelectric conversion element, the upper surface of the first patterned photoresist layer and the side surface of the first patterned photoresist layer, the second metal circuit layer being coupled to the upper surface of the photoelectric conversion element", the step of "forming a spacer in another portion of the upper surface of the photoelectric conversion element" is further included.

[0011] Based on the objective of this invention, a method for manufacturing an optical communication module is provided. The steps sequentially include: providing a light-transmitting substrate and a photoelectric conversion element, the photoelectric conversion element being disposed above the light-transmitting substrate; coating a first negative photoresist around the photoelectric conversion element and on its upper surface; exposing the first negative photoresist from below the light-transmitting substrate upwards; developing the first negative photoresist to form a first patterned photoresist layer, the first patterned photoresist layer being formed around the photoelectric conversion element and exposing its upper surface; and coating the entire surface with a second negative photoresist to cover the upper surface of the first patterned photoresist layer and the outer surface of the photoelectric conversion element. The exposed portion; the first patterned photoresist layer and the second negative photoresist are exposed from below the light-transmitting substrate upwards; the second negative photoresist is developed to form the second patterned photoresist layer, and the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, the opening exposing the exposed portion of the upper surface of the photoelectric conversion element; in one embodiment of the present invention, after completing the step of "developing the first negative photoresist to form the first patterned photoresist layer, the first patterned photoresist layer being formed in the area surrounding the photoelectric conversion element and exposing the upper surface of the photoelectric conversion element", the step of "forming a spacer in a portion of the upper surface of the photoelectric conversion element" is further included.

[0012] In one embodiment of the present invention, the light-transmitting substrate is a transparent sheet or a filter.

[0013] In one embodiment of the present invention, the photoelectric conversion element is a laser component or a light receiving component.

[0014] In one embodiment of the present invention, the method for forming the first metal circuit layer is chemical vapor deposition or physical vapor deposition.

[0015] In one embodiment of the present invention, the method for forming the second metal circuit layer is chemical vapor deposition or physical vapor deposition.

[0016] In one embodiment of the present invention, the photoelectric conversion element is shaped like a cube or cuboid, and the aperture of the photoelectric conversion element is located at the center of the upper surface of the photoelectric conversion element.

[0017] In one embodiment of the present invention, the material of the first metal circuit layer is gold, silver, copper, iron, aluminum, molybdenum, titanium, tungsten, nickel, cobalt, ruthenium, or indium tin oxide.

[0018] In one embodiment of the present invention, the width of the metal lines in the first metal line layer is 100 μm and the thickness is 2 to 5 μm.

[0019] In one embodiment of the present invention, the material of the second metal circuit layer is gold, silver, copper, iron, aluminum, molybdenum, titanium, tungsten, nickel, cobalt, ruthenium, or indium tin oxide.

[0020] In one embodiment of the present invention, the width of the metal lines in the second metal line layer is 100 μm and the thickness is 2 to 5 μm.

[0021] In one embodiment of the present invention, both the first negative photoresist and the second negative photoresist are benzocyclobutene (BCB). Attached Figure Description

[0022] Figure 1 This is a cross-sectional schematic diagram of the first state of the optical communication module.

[0023] Figure 2 This is a step diagram illustrating the manufacturing process of a first-state optical communication module.

[0024] Figure 3 This is a cross-sectional schematic diagram of step S101 in the manufacturing method of the first-state optical communication module.

[0025] Figure 4 This is a cross-sectional schematic diagram of step S102 in the manufacturing method of the first-state optical communication module.

[0026] Figure 5 This is a cross-sectional schematic diagram of step S103 in the manufacturing method of the first-state optical communication module.

[0027] Figure 6 This is a cross-sectional schematic diagram of step S104 in the manufacturing method of the first-state optical communication module.

[0028] Figure 7 This is a cross-sectional schematic diagram of step S105 in the manufacturing method of the first-state optical communication module.

[0029] Figure 8 This is a cross-sectional schematic diagram of step S106 in the manufacturing method of the first-state optical communication module.

[0030] Figure 9 This is a cross-sectional schematic diagram of step S107 in the manufacturing method of the first-state optical communication module.

[0031] Figure 10 This is a cross-sectional schematic diagram of step S108 in the manufacturing method of the first-state optical communication module.

[0032] Figure 11 This is a cross-sectional schematic diagram of the second state of the optical communication module.

[0033] Figure 12 This is a cross-sectional schematic diagram of the third state of the optical communication module.

[0034] Figure 13 This is a step diagram illustrating the manufacturing process of a second-state optical communication module.

[0035] Figure 14 This is a step diagram illustrating the manufacturing process of a third-state optical communication module.

[0036] Figure 15 This is a cross-sectional schematic diagram of the fourth-state optical communication module.

[0037] Figure 16 This is a step diagram illustrating the manufacturing process of a fourth-state optical communication module.

[0038] Figure 17 This is a cross-sectional schematic diagram of the fifth-state optical communication module.

[0039] Figure 18 This is a step diagram illustrating the manufacturing process of a fifth-state optical communication module.

[0040] The attached figures are labeled as follows:

[0041] 10 Transparent substrates

[0042] 20 First Metal Circuit Layer

[0043] 22 Second Metal Circuit Layer

[0044] 30 photoelectric conversion elements

[0045] 40 First negative photoresist

[0046] 42 Second negative photoresist

[0047] 50 spacers

[0048] 60 Exposure Light Source

[0049] 62 exposure light

[0050] 70 First patterned photoresist layer

[0051] 72 Second Patterned Photoresist Layer

[0052] 80 Opening

[0053] Steps S101 to S109

[0054] Steps S201 to S208

[0055] S301~S309 Steps

[0056] S401~S411 Steps

[0057] S501~S510 Steps Detailed Implementation

[0058] To enable those skilled in the art to easily understand the content of this invention, the following description, in conjunction with embodiments and accompanying drawings, further illustrates the invention. The embodiments are merely illustrative of the technical features of the invention, and the content mentioned is not intended to limit the invention.

[0059] Throughout this specification, "an embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment. Therefore, "an embodiment" mentioned in various places throughout this specification does not necessarily refer to the same embodiment. Furthermore, a particular feature, structure, or characteristic may be combined in any way in one or more embodiments.

[0060] In the description of this invention, it should be noted that the terms "upper," "lower," "left," "right," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting the invention.

[0061] In the description of this invention, "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0062] Please see Figure 1 , Figure 1This is a cross-sectional view of a first-state optical communication module, which includes a light-transmitting substrate 10, a first metal circuit layer 20, a photoelectric conversion element 30, a spacer 50, a first patterned photoresist layer 70, a second metal circuit layer 22, and a second patterned photoresist layer 72. The first metal circuit layer 20 is disposed on a portion of the upper surface of the light-transmitting substrate 10, and the photoelectric conversion element 30 is disposed above the light-transmitting substrate 10, with the lower surface of the photoelectric conversion element 30 coupled to the first metal circuit layer 20. The first patterned photoresist layer 70 is formed around the photoelectric conversion element 30, and the surrounding area of ​​the photoelectric conversion element 30 includes a portion of the first metal circuit layer 20. The second metal circuit layer 70... A second metal circuit layer 22 is distributed on a portion of the upper surface of the photoelectric conversion element 30, the upper surface of the first patterned photoresist layer 70, and the side surface of the first patterned photoresist layer 70. A second metal circuit layer 22 is coupled to the upper surface of the photoelectric conversion element 30. A spacer 50 is disposed on another portion of the upper surface of the photoelectric conversion element 30. A second patterned photoresist layer 72 is formed on the upper surface of the first patterned photoresist layer 70 and covers a portion of the second metal circuit layer 22. An opening 80 is formed in the second patterned photoresist layer 72 relative to the area above the photoelectric conversion element 30, exposing the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50. The exposed portion of the upper surface refers to the area on the upper surface of the photoelectric conversion element 30 that is not covered by the second metal circuit layer 22 and the spacer 50. The areas of the first metal circuit layer 20 that are far from the photoelectric conversion element 30 and not covered by the first patterned photoresist layer 70, and the areas of the second metal circuit layer 22 that are far from the photoelectric conversion element 30 and not covered by the first patterned photoresist layer 70, are used to couple with the printed circuit board (not shown in the figure) to transmit the electrical signals transmitted by the printed circuit board (not shown in the figure) to the photoelectric conversion element 30. The photoelectric conversion element 30 then converts the electrical signals into optical signals, and outputs the optical signals through the aperture of the photoelectric conversion element 30. The first patterned photoresist layer 70 is a first negative photoresist. The first patterned photoresist layer 70 is a patterned photoresist layer formed by exposure and development of the second negative photoresist 40; the second patterned photoresist layer 72 is a patterned photoresist layer formed by exposure and development of the second negative photoresist 42; both the first patterned photoresist layer 70 and the second patterned photoresist layer 72 serve as dielectrics for encapsulating the photoelectric conversion element 30; the photoelectric conversion element 30 is used to perform electro-optical conversion, converting the received electrical signal into an optical signal; the spacer 50 is used to separate the photoelectric conversion element 30 and the optical fiber (not shown in the figure) inserted into the opening 80, and the spacer 50 does not block the aperture of the photoelectric conversion element 30, so that the optical signal of the photoelectric conversion element 30 can be transmitted to the optical fiber (not shown in the figure) inserted into the opening 80.The exposure light 62 generated by the exposure light source 60 passes through the light-transmitting substrate 10 and irradiates the first negative photoresist 40 and the second negative photoresist 42, causing them to undergo a cross-linking reaction and cure.

[0063] Please see Figures 1-10 The present invention provides a method for manufacturing a first state sample of an optical communication module, the steps of which are sequentially steps S101, S102, S103, S104, S105, S106, S107, S108 and S109, which are described in sections below with reference to the accompanying drawings.

[0064] Please see Figure 2 and Figure 3 Step S101: Provide a light-transmitting substrate 10, a first metal line layer 20, and a photoelectric conversion element 30, wherein the first metal line layer 20 is formed on a portion of the upper surface of the light-transmitting substrate 10, and the photoelectric conversion element 30 is disposed above the light-transmitting substrate 10, and the lower surface of the photoelectric conversion element 30 is coupled to the first metal line layer 20; wherein the method for forming the first metal line layer 20 may be chemical vapor deposition or physical vapor deposition; wherein the photoelectric conversion element 30 is disposed above the light-transmitting substrate 10 using conductive adhesive die bonding, die bonding balling, or surface mount technology, so that the lower surface of the photoelectric conversion element 30 is coupled to the first metal line layer 20.

[0065] Please see Figure 2 and Figure 4 Step S102: Coat the surrounding area of ​​the photoelectric conversion element 30 and the upper surface of the photoelectric conversion element 30 with a first negative photoresist 40. The surrounding area of ​​the photoelectric conversion element 30 includes a portion of the first metal circuit layer 20, that is, the photoelectric conversion element 30 and a portion of the first metal circuit layer 20 are covered by the first negative photoresist 40. The area of ​​the first metal circuit layer 20 not covered by the first negative photoresist 40 is used to couple with the printed circuit board (not shown in the figure) to receive electrical signals from the printed circuit board (not shown in the figure).

[0066] Please see Figure 2 and Figure 5Step S103: Expose the first negative photoresist 40 from the bottom to the top of the light-transmitting substrate 10; wherein the exposure is to generate exposure light 62 using an exposure light source 60, the exposure light 62 passes through the light-transmitting substrate 10 and irradiates the first negative photoresist 40, causing the first negative photoresist 40 to undergo a cross-linking reaction, and the photoelectric conversion element 30 located above the light-transmitting substrate 10 will block the exposure light 62, so the first negative photoresist 40 located in the area above the photoelectric conversion element 30 cannot be exposed. Therefore, when developing with a developer, compared with the first negative photoresist 40 located in the area around the photoelectric conversion element 30 that is exposed, the first negative photoresist 40 located in the area above the photoelectric conversion element 30 cannot be exposed and is therefore more easily dissolved in the developer.

[0067] Please see Figure 2 and Figure 6 Step S104: Develop the first negative photoresist 40 to form a first patterned photoresist layer 70. The first patterned photoresist layer 70 is formed in the area surrounding the photoelectric conversion element 30 and exposes the upper surface of the photoelectric conversion element 30. The development involves using a developer to dissolve the first negative photoresist 40. Since the first negative photoresist 40 located in the area above the photoelectric conversion element 30 is not exposed, it will be dissolved by the developer, thus exposing the upper surface of the photoelectric conversion element 30. Furthermore, to facilitate subsequent metal circuit arrangement, after the first negative photoresist 40 in the area above the photoelectric conversion element 30 dissolves in the developer, the developer will continue to dissolve the first negative photoresist 40 in the area surrounding the photoelectric conversion element 30. The height of the upper surface of the first negative photoresist 40 located in the area surrounding the photoelectric conversion element 30 is the same as the height of the upper surface of the photoelectric conversion element 30. Then, the developer is removed to form the first patterned photoresist layer 70. Therefore, the first patterned photoresist layer 70 is located in the area surrounding the photoelectric conversion element 30, and the upper surface of the first patterned photoresist layer 70 is the same as the height of the upper surface of the photoelectric conversion element 30, exposing the upper surface of the photoelectric conversion element 30. This is only a preferred embodiment. In actual implementation, it is not limited to this. It is also possible to make the height of the upper surface of the first patterned photoresist layer 70 located in the area surrounding the photoelectric conversion element 30 higher or lower than the height of the upper surface of the photoelectric conversion element 30 according to practical needs.

[0068] Please see Figure 2 and Figure 7 Step S105: Form a second metal line layer 22 on a portion of the upper surface of the photoelectric conversion element 30, the upper surface of the first patterned photoresist layer 70, and the side surface of the first patterned photoresist layer 70. The second metal line layer 22 is coupled to the upper surface of the photoelectric conversion element 30. The method for forming the second metal line layer 22 may be chemical vapor deposition or physical vapor deposition.

[0069] Please see Figure 2 and Figure 8 Step S106: Forming a spacer 50 in another part of the upper surface of the photoelectric conversion element 30; wherein the spacer 50 can be formed on the upper surface of the photoelectric conversion element 30 by exposure using a positive photoresist, or it can be formed on the upper surface of the photoelectric conversion element 30 by various resins such as epoxy resin or acrylic resin using a needle spraying method or a glue needle dispensing method; wherein the size of the spacer 50 can be the same as the size of the photoelectric conversion element 30 or different from the size of the photoelectric conversion element 30. In the embodiments of the present invention, the size of the spacer 50 is smaller than the size of the photoelectric conversion element 30 as an example.

[0070] Please see Figure 2 and Figure 9 Step S107: Coat the entire surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, the spacer 50, and a portion of the second metal circuit layer 22 with the second negative photoresist layer 42; wherein the area of ​​the second metal circuit layer 22 not covered by the second negative photoresist layer 42 is used to couple with the printed circuit board (not shown in the figure) to receive electrical signals from the printed circuit board (not shown in the figure).

[0071] Please see Figure 2 and Figure 10 Step S108: Expose the first patterned photoresist layer 70 and the second negative photoresist 42 from the bottom to the top of the light-transmitting substrate 10.

[0072] Please refer back to this. Figure 1 and Figure 2 Step S109: The second negative photoresist 42 is developed to form a second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30. The opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50. The development is performed by dissolving the second negative photoresist 42 with a developer. Since the second negative photoresist 42 located in the area above the photoelectric conversion element 30 is not exposed, the second negative photoresist 42 forms an opening 80 relative to the area above the photoelectric conversion element 30. The opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50, so that the optical fiber (not shown in the figure) can achieve direct coupling through the insertion opening 80. In the manufacturing method of the first state of the optical communication module, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the area of ​​the upper surface of the photoelectric conversion element 30 that is not covered by the second metal line layer 22 and the spacer 50.

[0073] Please see Figure 1 and Figure 2In one embodiment of the present invention, a method for manufacturing a first state sample of an optical communication module that does not include the spacer 50 is further provided. The manufacturing method is basically the same as the manufacturing method of the first state sample of the optical communication module, except that the description of the spacer 50 is not included, i.e., step S106 is not required, and the description of the spacer 50 is removed in steps S107 and S109. Since no spacer 50 is formed on the upper surface of the photoelectric conversion element 30, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the area of ​​the upper surface of the photoelectric conversion element 30 that is not covered by the second metal circuit layer 22. Therefore, step S107 becomes "fully coating the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, and a portion of the second metal circuit layer 22; wherein the second metal circuit layer 22 is not covered by the second negative photoresist layer 42." The area covered by the resist 42 is used for coupling with a printed circuit board (not shown) to receive electrical signals from the printed circuit board (not shown). Step S109 becomes "developing the second negative photoresist 42 to form a second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30, the opening 80 exposing the exposed portion of the upper surface of the photoelectric conversion element 30; wherein development is to dissolve the second negative photoresist 42 using a developer. Since the second negative photoresist 42 located in the area above the photoelectric conversion element 30 is not exposed, the second negative photoresist 42 will form an opening 80 relative to the area above the photoelectric conversion element 30, and the opening 80 will expose the exposed portion of the upper surface of the photoelectric conversion element 30, so that the optical fiber (not shown) can achieve direct coupling through the insertion opening 80."

[0074] Please see Figure 11 , Figure 11 This is a cross-sectional view of the second state of the optical communication module. The difference between the second state and the first state of the optical communication module is that the second state does not include the second metal circuit layer 22.

[0075] Please see Figure 12 , Figure 12 This is a cross-sectional view of the third state of the optical communication module. The difference between the third state and the first state is that the third state does not include the first metal circuit layer 20.

[0076] Please see Figure 11 and Figure 13This invention provides a method for manufacturing a second state sample of an optical communication module, comprising steps S201, S202, S203, S204, S205, S206, S207, and S208 in sequence. The steps are substantially the same as those for manufacturing a first state sample of the optical communication module, except that the step of forming a second metal circuit layer 22 is not included. Step S201 involves providing a light-transmitting substrate 10, a first metal circuit layer 20, and a photoelectric conversion element 30. The first metal circuit layer 20 is formed on a portion of the upper surface of the light-transmitting substrate 10, and the photoelectric conversion element 30 is disposed above the light-transmitting substrate 10. The lower surface of the photoelectric conversion element 30 is coupled to the first metal circuit layer 20; the method for forming the first metal circuit layer 20 can be chemical vapor deposition or physical vapor deposition; the photoelectric conversion element 30 is disposed above the light-transmitting substrate 10 using conductive adhesive die bonding, die balling, or surface mount technology, so that the lower surface of the photoelectric conversion element 30 is coupled to the first metal circuit layer 20; step S202 involves coating the first negative photoresist 40 on the surrounding area of ​​the photoelectric conversion element 30 and the upper surface of the photoelectric conversion element 30, wherein the surrounding area of ​​the photoelectric conversion element 30 includes a portion of the first metal circuit layer 20; step S2 Step S203 involves exposing the first negative photoresist 40 from below the light-transmitting substrate 10; step S204 involves developing the first negative photoresist 40 to form a first patterned photoresist layer 70, which is formed in the area surrounding the photoelectric conversion element 30 and exposes the upper surface of the photoelectric conversion element 30; step S205 involves forming a spacer 50 on a portion of the upper surface of the photoelectric conversion element 30; step S206 involves coating the entire surface with a second negative photoresist 42 to cover the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, and the spacer 50; step S207 involves exposing the first negative photoresist 40 from below the light-transmitting substrate 10. The optical substrate 10 is exposed with its bottom facing upward to the first patterned photoresist layer 70 and the second negative photoresist 42; wherein step S208 is to develop the second negative photoresist 42 to form the second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30, the opening 80 exposing the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; wherein since the manufacturing method of the second-state optical communication module does not include the step of forming the second metal circuit layer 22, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the area of ​​the upper surface of the photoelectric conversion element 30 that is not covered by the spacer 50.

[0077] Please see Figure 11 and Figure 13In one embodiment of the present invention, a method for manufacturing a second state sample of an optical communication module that does not include the spacer 50 is further provided. The manufacturing method is basically the same as the manufacturing method of the second state sample of the optical communication module, except that the description of the spacer 50 is not included, that is, step S205 is not required, and the description of the spacer 50 is removed in steps S206 and S208. Since no spacer 50 is formed on the upper surface of the photoelectric conversion element 30, the exposed portion of the upper surface of the photoelectric conversion element 30 is the upper surface of the photoelectric conversion element 30. Therefore, step S206 becomes "coating the second negative photoresist 42 to cover the upper surface of the first patterned photoresist layer 70 and the exposed portion of the upper surface of the photoelectric conversion element 30", and step S208 becomes "developing the second negative photoresist 42 to form the second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30, the opening 80 exposing the exposed portion of the upper surface of the photoelectric conversion element 30".

[0078] Please see Figure 12 and Figure 14This invention provides a method for manufacturing a third-state optical communication module, comprising steps S301, S302, S303, S304, S305, S306, S307, S308, and S309 in sequence. The steps are essentially the same as those for manufacturing a first-state optical communication module, except that the step of forming a first metal circuit layer 20 is not included. Step S301 involves providing a light-transmitting substrate 10 and a photoelectric conversion element 30, with the photoelectric conversion element 30 disposed on the upper surface of the light-transmitting substrate 10. Step S30... Step 2 involves coating a first negative photoresist 40 onto the area surrounding the photoelectric conversion element 30 and the upper surface of the photoelectric conversion element 30; step S303 involves exposing the first negative photoresist 40 from below the light-transmitting substrate 10 upwards; step S304 involves developing the first negative photoresist 40 to form a first patterned photoresist layer 70, which is formed in the area surrounding the photoelectric conversion element 30 and exposes the upper surface of the photoelectric conversion element 30; step S305 involves forming a second metal circuit layer 22 on a portion of the upper surface of the photoelectric conversion element 30. The upper surface and side surface of the first patterned photoresist layer 70, and the second metal circuit layer 22 are coupled to the upper surface of the photoelectric conversion element 30; wherein step S306 is to form a spacer 50 on another part of the upper surface of the photoelectric conversion element 30; wherein step S307 is to coat the entire surface with a second negative photoresist 42 to cover the upper surface of the first patterned photoresist layer 70, the exposed part of the upper surface of the photoelectric conversion element 30, the spacer 50 and part of the second metal circuit layer 22; wherein step S308 is to coat the first from below the light-transmitting substrate 10 upwards. The patterned photoresist layer 70 and the second negative photoresist 42 are exposed; wherein step S309 is to develop the second negative photoresist 42 to form the second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30, the opening 80 exposing the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; wherein in the manufacturing method of the third state sample of the optical communication module, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the area of ​​the upper surface of the photoelectric conversion element 30 that is not covered by the second metal line layer 22 and the spacer 50.

[0079] Please see Figure 12 and Figure 14In one embodiment of the present invention, a method for manufacturing a third state sample of an optical communication module that does not include the spacer 50 is further provided. The manufacturing method is basically the same as the manufacturing method of the third state sample of the optical communication module, except that it does not include the description of the spacer 50, that is, step S306 is not required, and the description of the spacer 50 is removed in steps S307 and S309. Since no spacer 50 is formed on the upper surface of the photoelectric conversion element 30, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the portion of the upper surface of the photoelectric conversion element 30 that is not formed. Since the area is covered by the second metal circuit layer 22, step S307 becomes "coating the entire area with the second negative photoresist 42 to cover the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, and a portion of the second metal circuit layer 22". Step S309 becomes "developing the second negative photoresist 42 to form the second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30, the opening 80 exposing the exposed portion of the upper surface of the photoelectric conversion element 30".

[0080] Please see Figure 1 , Figure 2 , Figure 11 , Figure 12 , Figure 13 and Figure 14 In one embodiment of the present invention, the first, second and third states of the optical communication module may also be states that do not include the light-transmitting substrate 10. Therefore, the manufacturing method of the optical communication module of the first state after completing step S109, the manufacturing method of the optical communication module of the second state after completing step S208, and the manufacturing method of the optical communication module of the third state after completing step S309 may further include the step of removing the light-transmitting substrate 10.

[0081] Please see Figure 15 In another embodiment of the present invention, in the manufacturing method of the first state of the optical communication module, the first metal line layer 20 can be formed after the light-transmitting substrate 10 is removed. Since the first metal line layer 20 is formed after the light-transmitting substrate 10, the first metal line layer 20 is formed on the lower surface of the photoelectric conversion element 30 and the lower surface of the first patterned photoresist layer 70. The first metal line layer is coupled to the lower surface of the photoelectric conversion element 30. This will be referred to as the fourth state of the optical communication module below.

[0082] Please see Figure 15 and Figure 16The manufacturing method of the fourth state sample of the optical communication module is basically the same as that of the first state sample of the optical communication module. The difference is that it further includes a step of removing the light-transmitting substrate 10, and the first metal circuit layer 20 is formed only after the light-transmitting substrate 10 is removed. Since the first metal circuit layer 20 does not exist when the photoelectric conversion element 30 is disposed, the photoelectric conversion element 30 is disposed on the light-transmitting substrate 10 using a light-transmitting adhesive material. The light-transmitting adhesive material can be a solid optical adhesive or a liquid optical adhesive. The steps include steps S401, S402, S403, S404, S405, S406, S407, S408, and S409 in sequence. 409. Steps S410 and S411, wherein step S401 involves providing a light-transmitting substrate 10 and a photoelectric conversion element 30, with the photoelectric conversion element 30 disposed above the light-transmitting substrate 10; step S402 involves coating a first negative photoresist 40 onto the area surrounding the photoelectric conversion element 30 and the upper surface of the photoelectric conversion element 30, i.e., covering the photoelectric conversion element 30 with the first negative photoresist 40; step S403 involves exposing the first negative photoresist 40 from below the light-transmitting substrate 10 upwards; and step S404 involves developing the first negative photoresist 40 to form a first patterned photoresist layer 70, the first patterned photoresist layer 70 being formed in the area surrounding the photoelectric conversion element 30 and exposing the photoelectric conversion element 30. The upper surface of the element 30; wherein step S405 is to form a second metal circuit layer 22 on a portion of the upper surface of the photoelectric conversion element 30, the upper surface of the first patterned photoresist layer 70, and the side surface of the first patterned photoresist layer 70, and the second metal circuit layer 22 is coupled to the upper surface of the photoelectric conversion element 30; wherein step S406 is to form a spacer 50 on another portion of the upper surface of the photoelectric conversion element 30; wherein step S407 is to fully coat the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, the spacer 50, and a portion of the second metal circuit layer 22; wherein step S408 is to coat the first metal circuit layer 30 from below the light-transmitting substrate 10 upwards. A patterned photoresist layer 70 and a second negative photoresist 42 are exposed; wherein step S409 is to develop the second negative photoresist 42 to form a second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30, the opening 80 exposing the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; wherein the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the area of ​​the upper surface of the photoelectric conversion element 30 not covered by the second metal line layer 22 and the spacer 50; wherein step S410 is to remove the light-transmitting substrate 10; step S411 is to form a first metal line layer 20, wherein the first metal line layer 20 is coupled to the lower surface of the photoelectric conversion element 30.

[0083] Please see Figure 15 and Figure 16 The present invention further provides a method for manufacturing a fourth state sample of an optical communication module that does not include the spacer 50. The manufacturing method is basically the same as the manufacturing method of the fourth state sample of the optical communication module, except that it does not include the description of the spacer 50, that is, step S406 is not required, and the description of the spacer 50 is removed in steps S407 and S409. Since no spacer 50 is formed on the upper surface of the photoelectric conversion element 30, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the upper surface of the photoelectric conversion element 30 that is not covered by the second metal. Since the area is covered by the circuit layer 22, step S407 becomes "coating the entire area with the second negative photoresist 42 to cover the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, and a portion of the second metal circuit layer 22". Step S409 becomes "developing the second negative photoresist 42 to form the second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30, the opening 80 exposing the exposed portion of the upper surface of the photoelectric conversion element 30".

[0084] Please see Figure 17 and Figure 18 In another embodiment of the present invention, in the manufacturing method of the second state of the optical communication module, the first metal line layer 20 can be formed after the light-transmitting substrate 10 is removed. Since the first metal line layer 20 is formed after the light-transmitting substrate 10, the first metal line layer 20 is formed on the lower surface of the photoelectric conversion element 30 and the lower surface of the first patterned photoresist layer 70. The first metal line layer is coupled to the lower surface of the photoelectric conversion element 30. This will be referred to as the fifth state of the optical communication module below.

[0085] Please see Figure 17 and Figure 18The manufacturing method of the fifth state sample of the optical communication module is basically the same as that of the second state sample of the optical communication module. The difference is that it further includes a step of removing the light-transmitting substrate 10, and the first metal circuit layer 20 is formed only after the light-transmitting substrate 10 is removed. Since the first metal circuit layer 20 does not exist when the photoelectric conversion element 30 is disposed, the photoelectric conversion element 30 is disposed on the light-transmitting substrate 10 using a light-transmitting adhesive material. The light-transmitting adhesive material can be a solid optical adhesive or a liquid optical adhesive. The steps include steps S501, S502, S503, and S504 in sequence. Steps S505, S506, S507, S508, S509, and S510: Step S501 involves providing a light-transmitting substrate 10 and a photoelectric conversion element 30, with the photoelectric conversion element 30 disposed above the light-transmitting substrate 10; Step S502 involves coating a first negative photoresist 40 around the photoelectric conversion element 30 and on its upper surface; Step S503 involves exposing the first negative photoresist 40 from below the light-transmitting substrate 10 upwards; Step S504 involves developing the first negative photoresist 40 to form a first patterned photoresist layer 70. A patterned photoresist layer 70 is formed around the photoelectric conversion element 30, exposing the upper surface of the photoelectric conversion element 30; step S505 involves forming a spacer 50 on a portion of the upper surface of the photoelectric conversion element 30; step S506 involves coating the entire surface with a second negative photoresist 42 to cover the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, and the spacer 50; step S507 involves exposing the first patterned photoresist layer 70 and the second negative photoresist 42 from below the light-transmitting substrate 10; and step S508 involves developing the second negative photoresist 42 to... A second patterned photoresist layer 72 is formed, and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30. The opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50. Since the step of forming the second metal circuit layer 22 is not included, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the area of ​​the upper surface of the photoelectric conversion element 30 that is not covered by the spacer 50. Step S509 is to remove the light-transmitting substrate 10. Step S510 is to form the first metal circuit layer 20, wherein the first metal circuit layer 20 is coupled to the lower surface of the photoelectric conversion element 30.

[0086] The present invention further provides a method for manufacturing a fifth state sample of an optical communication module that does not include the spacer 50. The manufacturing method is basically the same as the manufacturing method of the fifth state sample of the optical communication module, except that the description of the spacer 50 is not included, i.e., step S505 is unnecessary, and the description of the spacer 50 is removed in steps S506 and S508. Since no spacer 50 is formed on the upper surface of the photoelectric conversion element 30, the exposed portion of the upper surface of the photoelectric conversion element 30 is the upper surface of the photoelectric conversion element 30. Therefore, step S506 becomes "coating the second negative photoresist 42 all over the surface". Step S508 is changed to "wherein step S508 is to develop the second negative photoresist 42 to form the second patterned photoresist 72, and the second patterned photoresist 72 forms an opening 80 relative to the area above the photoelectric conversion element 30, the opening 80 exposing the exposed portion of the upper surface of the photoelectric conversion element 30; wherein step S509 is to remove the light-transmitting substrate 10; and step S510 is to form the first metal line layer 20, wherein the first metal line layer 20 is coupled to the lower surface of the photoelectric conversion element 30."

[0087] In one embodiment of this invention, the second patterned photoresist layer 72 can be processed to adjust the configuration of the opening 80 of the optical communication module according to practical needs.

[0088] In a preferred embodiment of the present invention, in the manufacturing methods of the first, second, and third states of the optical communication module, the photoelectric conversion element 30 has a symmetrical shape such as a cube or cuboid, and the aperture of the photoelectric conversion element 30 is located at the center of the upper surface of the photoelectric conversion element 30. When the optical fiber (not shown in the figure) is inserted into the opening 80, it will be directly aligned with the aperture of the photoelectric conversion element 30. However, in actual implementation, it is not limited to this. The shape of the photoelectric conversion element 30 can also be other shapes, and the position of the aperture of the photoelectric conversion element 30 can also be adjusted according to practical needs.

[0089] In one embodiment of the present invention, in the manufacturing methods of the first-state optical communication module, the second-state optical communication module, and the third-state optical communication module, the light-transmitting substrate 10 can be a transparent sheet or a filter depending on the type of the first negative photoresist 40 and the second negative photoresist 42 used. The transparent sheet refers to a light-transmitting sheet that allows light of all wavelengths to pass through, such as a transparent glass sheet or a transparent plastic sheet. The filter can be an ultraviolet light bandpass, a visible light bandpass, or an infrared light bandpass, but is not limited to these. The range of filtered light wavelengths can also be adjusted according to the light wavelength required for exposure.

[0090] In one embodiment of the present invention, the first negative photoresist 40 and the second negative photoresist 42 are both benzocyclobutene (BCB), the light-transmitting substrate 10 is an ultraviolet light bandpass, and the exposure light source 60 is a mercury lamp.

[0091] In one embodiment of the present invention, the materials of the first metal circuit layer 20 and the second metal circuit layer 22 may be gold, silver, copper, iron, aluminum, molybdenum, titanium, tungsten, nickel, cobalt, ruthenium or indium tin oxide.

[0092] In one embodiment of the present invention, the photoelectric conversion element 30 may be a laser component or a light receiving component, wherein the laser component may be, for example, a vertical-cavity surface-emitting laser (VCSEL), a laser diode (LD), or a photodiode (PD), etc., and the light receiving component may be, for example, a photodiode, etc.

[0093] In one embodiment of the present invention, the width of the metal lines of the first metal line layer 20 is 100 μm and the thickness is 2 to 5 μm. However, in actual implementation, it is not limited to this and the width and thickness can be adjusted according to practical needs.

[0094] In one embodiment of the present invention, the width of the metal lines in the second metal line layer 22 is 100 μm and the thickness is 2 to 5 μm. However, in actual implementation, it is not limited to this and the width and thickness can be adjusted according to practical needs.

[0095] The technical feature of this invention is that it uses the photoelectric conversion element itself to block light, replacing the function of the high-precision photomask in the current method of manufacturing emission modules by photolithography, thus saving the time and money required to design a high-precision photomask and reducing production costs.

Claims

1. A method for manufacturing an optical communication module, characterized in that, The steps, in sequence, include: A light-transmitting substrate and a photoelectric conversion element are provided, wherein the photoelectric conversion element is disposed above the light-transmitting substrate; A first negative photoresist is applied to the area surrounding the photoelectric conversion element and the upper surface of the photoelectric conversion element; The first negative photoresist is exposed from below to above on the light-transmitting substrate; The first negative photoresist is developed to form a first patterned photoresist layer, the first patterned photoresist layer being formed in the surrounding area of ​​the photoelectric conversion element and exposing the upper surface of the photoelectric conversion element; A second metal circuit layer is formed on a portion of the upper surface of the photoelectric conversion element, the upper surface of the first patterned photoresist layer, and the side surface of the first patterned photoresist layer, and the second metal circuit layer is coupled to the upper surface of the photoelectric conversion element. A second negative photoresist is applied to cover the upper surface of the first patterned photoresist layer, the exposed portion of the upper surface of the photoelectric conversion element, and a portion of the second metal circuit layer. The first patterned photoresist layer and the second negative photoresist are exposed from the bottom to the top of the light-transmitting substrate; The second negative photoresist is developed to form a second patterned photoresist layer, and the second patterned photoresist layer forms an opening relative to the region above the photoelectric conversion element, the opening exposing the exposed portion of the upper surface of the photoelectric conversion element; Remove the light-transmitting substrate; A first metal circuit layer is formed, which is coupled to the lower surface of the photoelectric conversion element.

2. The manufacturing method of the optical communication module as described in claim 1, characterized in that, After completing the step of "forming a second metal circuit layer on a portion of the upper surface of the photoelectric conversion element, the upper surface of the first patterned photoresist layer and the side surface of the first patterned photoresist layer, with the second metal circuit layer coupled to the upper surface of the photoelectric conversion element", the method further includes the step of "forming a spacer on another portion of the upper surface of the photoelectric conversion element".

3. The manufacturing method of the optical communication module as described in claim 1, characterized in that, The light-transmitting substrate is a transparent sheet or a filter.

4. The method for manufacturing an optical communication module as described in claim 1, characterized in that, The photoelectric conversion element is a laser component or a light receiving component.

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