A dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide

Abstract

The present invention discloses a dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide, which includes a first metal layer, a first metal patch and a second metal patch, and is provided with a blank dielectric region, a grounded coplanar waveguide and a transition structure, and further includes a slow-wave parallel-plate waveguide, a microstrip power divider and a coupling slot. In the microwave band, the slow-wave parallel-plate waveguide can guide the propagation of quasi-TEM waves, and the microwave signals propagating in the slow-wave parallel-plate waveguide will be radiated via the first metal patch and the second metal patch. In the millimeter-wave band, the slow-wave parallel-plate waveguide will exhibit electromagnetic bandgap characteristics. The present invention has good gain and scattering performance in both the microwave band and the millimeter-wave band, and has good isolation between the microwave and millimeter-wave channels; the present invention has a simple structure, can be fabricated by mature processes such as PCB printing, has a compact structure, low manufacturing cost, and is conducive to the application of 5G and more advanced communication technologies. The present invention is widely applied to the field of antenna technology.

Description

Technical Field

[0001] The present invention relates to the technical field of antennas, and in particular to a dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide. Background Art

[0002] With the rapid development of wireless communication technologies, users have increasingly higher requirements for the rate and quality of mobile communications. The traditional Sub-6G frequency band can no longer meet these needs. 5G systems and future more advanced communication systems have introduced the millimeter-wave frequency band. By utilizing the rich available spectrum resources in the millimeter-wave frequency band, high-speed and high-quality wireless communications can be achieved in cooperation with the Sub-6G frequency band. At the same time, this trend also means that Sub-6G and millimeter-wave systems need to coexist in communication devices, which also includes the coexistence of Sub-6G antennas and millimeter-wave antennas. To achieve this goal, in recent years, researchers have achieved the integration of microwave / millimeter-wave units by designing common-aperture antennas, significantly improving the device integration. However, existing microwave / millimeter-wave dual-band common-aperture antennas are mainly realized by embedding millimeter-wave units into microwave units. Such a structure often has the following problems: (1) The dual-band units overlap physically, resulting in limitations in array layout; (2) The integration of dual-band units is likely to cause mutual interference between microwave and millimeter-wave channels, and existing designs are difficult to achieve interference suppression in a wide frequency band. Summary of the Invention

[0003] Aiming at the technical problems in current antenna technologies, such as the physical structure overlap and channel interference in microwave / millimeter-wave dual-band common-aperture antennas, the purpose of the present invention is to provide a dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide.

[0004] The dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide in an embodiment of the present invention includes a first dielectric substrate and a second dielectric substrate, and the lower surface of the first dielectric substrate faces the upper surface of the second dielectric substrate;

[0005] The upper surface of the first dielectric substrate is provided with a first metal layer, a first metal patch and a second metal patch. The first metal layer extends along the length direction of the first dielectric substrate. The first metal patch and the second metal patch divide the first metal layer into several parts. The first metal layer, the first metal patch and the second metal patch are respectively provided with several blank dielectric regions, and each of the blank dielectric regions is arranged along the extension direction of the first metal layer. One end of the first metal layer is provided with a first grounded coplanar waveguide, and the other end of the first metal layer is provided with a second grounded coplanar waveguide. In the first metal layer, a first transition structure is provided in the part between the first grounded coplanar waveguide and the closest blank dielectric region, and a second transition structure is provided in the part between the second grounded coplanar waveguide and the closest blank dielectric region.

[0006] The lower surface of the first dielectric substrate is provided with a first microstrip line, a second microstrip line and a structure array. The structure array and a part of the first metal layer, the first metal patch and the second metal patch form a slow-wave parallel plate waveguide. The first microstrip line is connected to one side of the structure array, the second microstrip line is connected to the other side of the structure array, the first microstrip line is connected to the first grounded coplanar waveguide through a through hole, and the second microstrip line is connected to the second grounded coplanar waveguide through a through hole.

[0007] The upper surface of the second dielectric substrate is provided with a second metal layer, and several coupling slits are provided on the second metal layer. Each of the coupling slits respectively corresponds to the projection range of a corresponding blank dielectric region.

[0008] The lower surface of the second dielectric substrate is provided with a microstrip power divider, and the microstrip power divider includes several output terminals. Each of the output terminals respectively corresponds to the projection range of a corresponding coupling slit.

[0009] Further, the dual-band common-aperture antenna based on the slow-wave parallel plate waveguide further includes a curing sheet. The curing sheet is located between the first dielectric substrate and the second dielectric substrate, and the first dielectric substrate and the second dielectric substrate are bonded together through the curing sheet.

[0010] Further, the structure array includes several square metal patches arranged periodically.

[0011] Each of the square metal patches is separated from an adjacent square metal patch by a slit. The projections of all the square metal patches on the upper surface of the first dielectric substrate surround all the blank dielectric regions. Each of the square metal patches is connected to the first metal layer, the first metal patch or the second metal patch through a via hole.

[0012] In the structure array, a part of the square metal patches located on one side is connected to the first microstrip line, and a part of the square metal patches located on the other side is connected to the second microstrip line.

[0013] Further, in the first microstrip line and the second microstrip line, the width gradually narrows from the side connected to the structure array to the other side.

[0014] Further, the first transition structure and the second transition structure respectively include two rows of shielded via sequences; the shielded via sequence includes a plurality of shielded vias spaced at a certain distance from each other, one end of the shielded via is connected to the first metal layer, and the other end of the shielded via is connected to the second metal layer;

[0015] The two rows of shielded via sequences in the first transition structure are respectively arranged on both sides of the first grounded coplanar waveguide, and the two rows of shielded via sequences in the second transition structure are respectively arranged on both sides of the second grounded coplanar waveguide.

[0016] Further, a number of tuning vias are provided on the second metal layer, each tuning via is respectively located beside a corresponding coupling slot, one end of each tuning via is connected to the second metal layer, and the other end is respectively connected to a corresponding output end in the microstrip power divider.

[0017] Further, the shapes of the first metal patch and the second metal patch are both I-shaped.

[0018] Further, a gap is provided between the first metal patch and the first metal layer, and between the second metal patch and the first metal layer.

[0019] Further, the first metal patch and the second metal patch, the first grounded coplanar waveguide and the second grounded coplanar waveguide, and the first transition structure and the second transition structure are symmetric about the central axis of the first dielectric substrate.

[0020] Further, the microstrip power divider is a multi-way equal-amplitude power divider.

[0021] The beneficial effects of the present invention are as follows: The dual-band common-aperture antenna based on the slow-wave parallel-plate waveguide in the embodiment has good gain and scattering performance in both the microwave band and the millimeter-wave band, and has good isolation between the microwave and millimeter-wave channels; the structure of the dual-band common-aperture antenna based on the slow-wave parallel-plate waveguide is simple, can be fabricated by mature processes such as PCB printing, is compact in structure, has low manufacturing cost, and is conducive to the application of 5G and more advanced communication technologies. Description of the Drawings

[0022] Figure 1It is the overall structure diagram of the dual-band common-aperture antenna in the embodiment;

[0023] Figure 2 It is the structure diagram of the upper surface of the first dielectric substrate in the embodiment;

[0024] Figure 3 It is the structure diagram of the lower surface of the first dielectric substrate in the embodiment;

[0025] Figure 4 It is the structure diagram of the cured sheet in the embodiment;

[0026] Figure 5 It is the structure diagram of the upper surface of the second dielectric substrate in the embodiment;

[0027] Figure 6 It is the structure diagram of the lower surface of the second dielectric substrate in the embodiment;

[0028] Figure 7 It is the schematic diagram of the simulation and measured results of the scattering coefficient - frequency of the dual-band common-aperture antenna in the microwave band in the embodiment;

[0029] Figure 8 It is the schematic diagram of the simulation and measured results of the E-plane pattern of the dual-band common-aperture antenna in the microwave band in the embodiment;

[0030] Figure 9 It is the schematic diagram of the simulation and measured results of the gain - frequency of the dual-band common-aperture antenna in the microwave band in the embodiment;

[0031] Figure 10 It is the schematic diagram of the simulation and measured results of the scattering coefficient - frequency of the dual-band common-aperture antenna in the millimeter-wave band in the embodiment;

[0032] Figure 11 It is the schematic diagram of the simulation and measured results of the E-plane and H-plane patterns of the dual-band common-aperture antenna in the millimeter-wave band in the embodiment;

[0033] Figure 12 It is the schematic diagram of the simulation and measured results of the gain - frequency of the dual-band common-aperture antenna in the millimeter-wave band in the embodiment. Specific implementation manner

[0034] In this embodiment, the structure of the dual-band common-aperture antenna based on the slow-wave parallel-plate waveguide is as Figure 1 shown, and its basic structure is the first dielectric substrate and the second dielectric substrate. Figure 1 Here, the positive direction of the z-axis is upward, and the opposite direction is downward. Therefore, Figure 1 the side of the first dielectric substrate shown is the upper surface of the first dielectric substrate, and the other side is the lower surface of the first dielectric substrate. Figure 1One side of the second dielectric substrate shown is the upper surface of the second dielectric substrate, and the other side is the lower surface of the second dielectric substrate.

[0035] Reference Figure 1 , the lower surface of the first dielectric substrate and the upper surface of the second dielectric substrate are opposite, and the first dielectric substrate and the second dielectric substrate are combined into a whole. Specifically, the curing sheet can be placed between the first dielectric substrate and the second dielectric substrate to separate the first dielectric substrate from the second dielectric substrate. Among them, the first dielectric substrate, the second dielectric substrate and the curing sheet are rectangular thin plates of the same size. The first dielectric substrate is made of Rogers TC600 sheet with a thickness of 1 mm and a dielectric constant of 6.15, the second dielectric substrate is made of Rogers 5880 sheet with a thickness of 0.254 mm and a dielectric constant of 2.2, and the curing sheet is Rogers 4450F sheet with a thickness of 0.2 mm and a dielectric constant of 3.7. The first dielectric substrate and the second dielectric substrate are completely overlapped, that is, the first dielectric substrate and the second dielectric substrate after mechanical connection are still rectangular thin plates.

[0036] In this embodiment, the structure of the upper surface of the first dielectric substrate is as follows: Figure 2 See Figure 2 A first metal layer, a first metal patch and a second metal patch are manufactured on the upper surface of the first dielectric substrate through a PCB printing process.

[0037] Reference Figure 2 The first metal layer extends along the length direction of the first dielectric substrate, and the first metal layer is printed on the upper surface of the first dielectric substrate. The first metal patch and the second metal patch separate the first metal layer into several parts. The first metal patch and the second metal patch have the same shape, both of which are I-shaped.

[0038] Reference Figure 1 and Figure 2 The first metal patch and the second metal patch are printed on the upper surface of the first dielectric substrate as an antenna array working in microwave. The first metal layer, the first metal patch and the second metal patch can be manufactured by the following steps: a first dielectric substrate with a depth of L is manufactured on the upper surface of the first dielectric substrate. a , width is W m The metal layer ( Figure 2 The area surrounded by the dotted line in the middle is used as the first metal layer. Four slits are etched on the first metal layer at this time to divide it into five parts. Then, the second and fourth parts are extended along the x-axis direction from either end. p , add L on both sides of the extension 1 ×W 1 and L 2 ×W 2The small patch makes the extension section form a T-shaped structure. In this way, among the 5 parts obtained by dividing the original first metal layer by the gap, the 1st part, the 3rd part, and the 5th part remain part of the first metal layer, while the 2nd part becomes part of the first metal patch, and the 4th part becomes part of the second metal patch. The first metal patch and the second metal patch are symmetric about the central axis of the first dielectric substrate.

[0039] Referring to Figure 1 and Figure 2 , the first metal layer, the first metal patch, and the second metal patch are respectively provided with a number of blank dielectric regions, forming a sequence of blank dielectric regions. Each blank dielectric region is a dielectric resonator antenna unit operating in the millimeter-wave frequency band. In this example, the sequence of blank dielectric regions is realized by periodically removing some metal materials from the first metal layer, the first metal patch, and the second metal patch, so as to expose the dielectric material of the first dielectric substrate. The size of each blank dielectric region is L d ×W d , and the spacing between two adjacent blank dielectric regions is D. The operating frequency of the millimeter-wave dielectric resonator antenna is determined by the three-dimensional size of the blank dielectric region. Therefore, the size of the blank dielectric region is not limited to the shape and size selected in this embodiment.

[0040] Referring to Figure 1 and Figure 2 , first ground coplanar waveguides and second ground coplanar waveguides are respectively fabricated at both ends of the first metal layer. The first ground coplanar waveguide and the second ground coplanar waveguide are respectively separated from the first metal layer by gaps.

[0041] In this example, the structure of the lower surface of the first dielectric substrate is as Figure 3 shown. Referring to Figure 3 , a first microstrip line, a second microstrip line, and a structure array are fabricated on the lower surface of the first dielectric substrate through the PCB printing process.

[0042] Referring to Figure 3 , the structure array therein is a mushroom-shaped structure array, specifically including a plurality of square metal patches with a scale of 10×54. In this example, the size of each square metal patch is s×s, and each square metal patch has a metallized via with a diameter of d. The spacing (width of the gap) between two adjacent square metal patches is p.

[0043] Referring to Figure 2 and Figure 3, all the square metal patches are closely arranged together, and the shape formed by them (the projection on the upper surface of the first dielectric substrate) can cover a part of the first metal layer, the first metal patch, and the second metal patch respectively. That is, the projection of each square metal patch on the upper surface of the first dielectric substrate corresponds to a position in the first metal layer, the first metal patch, or the second metal patch respectively, and the projection of no square metal patch on the upper surface of the first dielectric substrate corresponds to the position of the blank dielectric region. Therefore, the shape formed by all the square metal patches closely arranged together can surround all the blank dielectric regions. Each square metal patch is connected to the first metal layer on the upper surface (if the projection of the square metal patch is at the position of the first metal layer), the first metal patch (if the projection of the square metal patch is at the position of the first metal patch), or the second metal patch (if the projection of the square metal patch is at the position of the second metal patch) through its metallized vias passing through the first dielectric substrate.

[0044] In this embodiment, the inverted mushroom-shaped structure array composed of all the square metal patches, together with the metallized vias of each square metal patch and the regions corresponding to the first metal layer, the first metal patch, and the second metal patch connected by each metallized via (such as Figure 2 the positions shown by the white dot matrix in

[0045] The purpose of selecting square metal patches with specific shapes and sizes is to make them generate electromagnetic bandgap characteristics in the required frequency band. Since the electromagnetic bandgap characteristics in the required frequency band can be regulated by multiple parameters of the square metal patches, the shape and size of the square metal patches, the size of the metallized vias, and the spacing between the two structures are not limited to the shapes and sizes selected in this embodiment.

[0046] Referring to Figure 3 , the first microstrip line and the second microstrip line are directly connected to some of the square metal patches at one end of the structure array respectively. One end of the first microstrip line ( Figure 3 the rightmost circular ring part in Figure 3 ) is connected to the first grounded coplanar waveguide located on the upper surface of the first dielectric substrate through a metallized via, and one end of the second microstrip line (

[0047] Referring to Figure 3 In this embodiment, the first microstrip line and the second microstrip line have a gradually changing width, and the part connected to the square metal patches is the widest, and the other end is the narrowest. Specifically, taking the second microstrip line as an example, the second microstrip line includes a uniform microstrip line with a length of L g and a width of W g , and a part with a length of L t and a width that varies from Wg to W g A linearly tapered microstrip line.

[0048] Referring to Figure 1 and Figure 2 , a first transition structure and a second transition structure are fabricated at both ends of the first metal layer to achieve the transition from a grounded coplanar waveguide to a slow-wave parallel-plate waveguide. In this embodiment, the first transition structure and the second transition structure are symmetric points. Taking the first transition structure as an example, a row of shielding via sequences is arranged on each side of the first grounded coplanar waveguide. Each row of shielding via sequences includes a plurality of shielding vias. Each shielding via is a metallized blind via that penetrates through the first dielectric substrate and the cured film. One end of the shielding via is connected to the first metal layer, and the other end is connected to the second metal layer.

[0049] By setting the shielding via sequences, signal leakage from the first transition structure or the second transition structure can be prevented.

[0050] In this embodiment, the structure of the cured film is as shown in Figure 4 , where the round holes are the traces left by the shielding via sequences passing through the cured film.

[0051] In this embodiment, the structure of the upper surface of the second dielectric substrate is as shown in Figure 5 . Referring to Figure 5 , a coupling slot sequence is etched on the second metal layer on the upper surface of the second dielectric substrate. Specifically, the coupling slot sequence includes 8 coupling slots, and each coupling slot is respectively located directly below a blank dielectric region. For example, if a blank dielectric region is projected onto the upper surface of the second dielectric substrate, there will be a coupling slot within the projection range of this blank dielectric region.

[0052] In this embodiment, the structure of the lower surface of the second dielectric substrate is as shown in Figure 6 . Referring to Figure 6 , a microstrip power divider is printed on the lower surface of the second dielectric substrate. In this embodiment, the microstrip power divider is a parallel-type eight-way equal-amplitude and in-phase power divider, that is, this microstrip power divider has 1 input terminal and 8 output terminals. The 8 output terminals of the microstrip power divider respectively extend below the 8 coupling slots to couple the signals conducted by the power divider to the blank dielectric regions through the coupling slots to excite radiation.

[0053] In this embodiment, the size of each coupling slot is L s ×W s , and the spacing between adjacent two coupling slots is D. At the same time, in order to achieve impedance matching, a tuning via sequence composed of 8 tuning vias is also added. One end of each tuning via is connected to the second metal layer on the upper surface of the second dielectric substrate, and the other end is connected to the corresponding output terminal of the microstrip power divider on the lower surface of the second dielectric substrate.

[0054] Referring to Figure 1 , after all the structures on the first dielectric substrate and the second dielectric substrate are manufactured, the two are bonded together by a curing sheet placed between the first dielectric substrate and the second dielectric substrate. When bonding, the lower surface of the first dielectric substrate faces the upper surface of the second dielectric substrate. After bonding, the first dielectric substrate, the second dielectric substrate, and the curing sheet form a thin plate with an overall size of L a ×W a , that is, the dual-band common-aperture antenna based on the slow-wave parallel-plate waveguide in this embodiment is obtained.

[0055] (1) In the microwave frequency band, the slow-wave parallel-plate waveguide can guide the propagation of quasi-TEM waves. The microwave signals propagating in the slow-wave parallel-plate waveguide will be radiated via the first metal patch and the second metal patch; since a phase difference will be generated when the signals propagate in the slow-wave parallel-plate waveguide, the current distributions on the two metal patches will also have a phase difference, so a specific beam direction deflection will be generated after the radiation fields of the two metal patches are superimposed. Therefore, when signals are input from both ends of the slow-wave parallel-plate waveguide (for example, from the first grounded coplanar waveguide or the second grounded coplanar waveguide), two beams can be generated respectively. Especially when the entire antenna structure has the characteristic of central axis symmetry, the two generated beams have specific directions. By changing the input direction of the signals, beam control in the microwave frequency band can be achieved.

[0056] (2) In the millimeter-wave frequency band, the slow-wave parallel-plate waveguide will exhibit electromagnetic bandgap characteristics, which means that electromagnetic waves cannot propagate in this structure within the characteristic frequency band. The 8 blank dielectric regions on the slow-wave parallel-plate waveguide can be regarded as 8 dielectric resonator antennas. Signals can be transmitted to the 8 dielectric resonator antennas via the coupling slot sequence through the microstrip power divider fabricated on the second dielectric substrate, thereby exciting them to generate radiation. In practice, the 8 dielectric resonator antennas can be excited by 8 independent signal paths. By controlling the phase and amplitude of the 8 signal paths, the 8 dielectric resonator antennas can achieve beam control in the millimeter-wave frequency band based on the phased array principle.

[0057] (3) Since the coupling slot has high-pass characteristics and the slow-wave parallel-plate waveguide has electromagnetic bandgap characteristics, the entire structure can achieve natural inter-channel interference suppression. That is to say, the mutual interference between the microwave and millimeter-wave channels can be naturally suppressed by the characteristics of this structure without adding additional filtering units, thus simplifying the hardware structure.

[0058] Based on the above principles (1)-(3), when using the dual-band common-aperture antenna based on the slow-wave parallel-plate waveguide in this embodiment, the first grounded coplanar waveguide can be used as port 1, the second grounded coplanar waveguide can be used as port 2, and the input end of the microstrip power divider can be used as port 3; a microwave signal is input to port 1 or port 2, and a millimeter-wave signal is input to port 3.

[0059] In this embodiment, the technical effects of the dual-band common-aperture antenna based on the slow-wave parallel-plate waveguide are mainly brought about by its structure. In this embodiment, each parameter is within Figure 2 — Figure 6 as marked, and the specific parameter values are shown in Table 1.

[0060] Table 1

[0061] Parameter <![CDATA[L a > <![CDATA[W a > <![CDATA[W m > <![CDATA[W p > <![CDATA[W d > <![CDATA[L d > <![CDATA[L p > Value of the parameter 82 30 10 4.5 4 2 11.7 Parameter <![CDATA[L 1 > <![CDATA[L 2 > <![CDATA[W 1 > <![CDATA[W 2 > s d p Value of the parameter 3.8 4.1 5 4.5 0.8 0.4 1 Parameter <![CDATA[L g > <![CDATA[W g > <![CDATA[L t > <![CDATA[W e > D <![CDATA[L s > <![CDATA[W s > Value of the parameter 3.8 0.4 6.9 4.4 6 2.8 0.2

[0062] Unit: mm

[0063] Manufacture a first dielectric substrate, a second dielectric substrate, a slow-wave parallel-plate waveguide, a first metal layer, a first metal patch, a second metal patch, a blank dielectric region sequence, a first transition structure, a second transition structure, a second metal layer, a microstrip power divider, a coupling slot sequence, a tuning via sequence, and a curing sheet with corresponding dimensions according to the above values, and simulate the above values. At the same time, conduct actual measurements on the manufactured microwave / millimeter-wave dual-band common-aperture antenna.

[0064] The microwave-frequency scattering coefficient-frequency simulation and actual measurement for the dual-band common-aperture antenna based on the slow-wave parallel-plate waveguide are as Figure 7 shown. The simulated -10-dB impedance bandwidth (|S 11 < -10 dB|) ranges from 3.44 to 3.54 GHz, and the measured -10-dB impedance bandwidth ranges from 3.41 to 3.55. Within the simulated -10-dB impedance bandwidth, the simulated |S 21 | varies between -22.91 and -11.25 dB. Within the measured -10-dB impedance bandwidth, the measured |S 21 | varies between -25.5 and -13.58 dB. In the microwave frequency band, the isolation between the microwave and millimeter-wave channels in the simulation and actual measurement, that is, |S 31 | and |S 32 |, are both lower than -36 dB.

[0065] The microwave-frequency E-plane pattern simulation and actual measurement for the dual-band common-aperture antenna based on the slow-wave parallel-plate waveguide are as Figure 8As shown. In the simulation results, when Port 1 and Port 2 are excited separately, the radiation beams of the antenna will deflect and point to -33° and 33° respectively. In the test results, when Port 1 and Port 2 are excited separately, the beam directions are -41° and 39° respectively.

[0066] The microwave - band gain - frequency simulation and measurement for the dual - band common - aperture antenna based on slow - wave parallel - plate waveguides are as Figure 9 shown. The simulated peak gain is 5.49 dBi, which appears at 3.48 GHz. The measured peak gain is 4.95 dBi, which appears at 3.44 GHz.

[0067] The millimeter - wave - band scattering - coefficient - frequency simulation and measurement for the dual - band common - aperture antenna based on slow - wave parallel - plate waveguides are as Figure 10 shown. The simulated - 10 - dB impedance bandwidth ranges from 26.6 to 30 GHz, and the measured - 10 - dB impedance bandwidth ranges from 26.2 to 30.1 GHz. In the millimeter - wave band, the isolation between the microwave and millimeter - wave channels in the simulation and measurement, that is, |S 31 | and |S 32 |, are both lower than -40 dB.

[0068] The millimeter - wave - band E - plane and H - plane radiation pattern simulation and measurement for the dual - band common - aperture antenna based on slow - wave parallel - plate waveguides are as Figure 11 shown. It can be seen that the antenna shows radiation towards the broadside direction, and the simulation and measurement results are in good agreement.

[0069] The millimeter - wave - band gain - frequency simulation and measurement for the dual - band common - aperture antenna based on slow - wave parallel - plate waveguides are as Figure 12 shown. The simulated peak gain is 14.35 dBi, which appears at 28 GHz. The measured peak gain is 13.94 dBi, which appears at 27.25 GHz.

[0070] There are some deviations between the above - mentioned simulation and measurement results. On the one hand, it is caused by manufacturing errors, and on the other hand, it is due to the slight fluctuations in the dielectric constant of the used dielectric substrate material.

[0071] According to Figures 7 - 12 the simulation and measurement results shown, the dual - band common - aperture antenna based on slow - wave parallel - plate waveguides in this embodiment has good gain and scattering performance in both the microwave band and the millimeter - wave band, and has good isolation between the microwave and millimeter - wave channels.

[0072] It should be noted that, unless otherwise specified, when a certain feature is referred to as "fixed" or "connected" to another feature, it can be directly fixed or connected to the other feature, or indirectly fixed or connected to the other feature. In addition, the descriptions such as up, down, left, and right used in the present disclosure are only relative to the mutual positional relationship of the components of the present disclosure in the accompanying drawings. The singular forms "a", "the", and "said" used in the present disclosure are also intended to include the plural forms, unless the context clearly indicates otherwise. In addition, unless otherwise defined, all technical and scientific terms used in this embodiment have the same meaning as commonly understood by those skilled in the technical field of the present invention. The terms used in the specification of this embodiment are only for describing specific embodiments and are not intended to limit the present invention. The term "and / or" used in this embodiment includes any and all combinations of one or more of the related listed items.

[0073] It should be understood that although the terms first, second, third, etc. may be used in the present disclosure to describe various elements, these elements should not be limited to these terms. These terms are only used to distinguish elements of the same type from each other. For example, without departing from the scope of the present disclosure, the first element may also be referred to as the second element, and similarly, the second element may also be referred to as the first element. The use of any and all examples or exemplary language ("for example", "such as", etc.) provided in this embodiment is only intended to better illustrate the embodiments of the present invention and will not impose a limitation on the scope of the present invention unless otherwise required.

[0074] It should be recognized that the embodiments of the present invention can be implemented or carried out by computer hardware, a combination of hardware and software, or by computer instructions stored in a non-transitory computer-readable memory. The method can be implemented in a computer program using standard programming techniques - including a non-transitory computer-readable storage medium configured with the computer program, where the storage medium so configured causes the computer to operate in a specific and predefined manner - according to the methods and drawings described in the specific embodiments. Each program can be implemented in a high-level procedural or object-oriented programming language to communicate with the computer system. However, if desired, the program can be implemented in assembly or machine language. In any case, the language can be a compiled or interpreted language. In addition, for this purpose, the program can run on a dedicated integrated circuit programmed for this purpose.

[0075] In addition, the operations of the processes described in this embodiment may be performed in any suitable order, unless this embodiment otherwise indicates or is otherwise clearly contradicted by the context. The processes described in this embodiment (or variations and / or combinations thereof) may be performed under the control of one or more computer systems configured with executable instructions, and may be implemented as code (e.g., executable instructions, one or more computer programs, or one or more applications) executed commonly on one or more processors, by hardware, or a combination thereof. The computer program includes a plurality of instructions executable by one or more processors.

[0076] Furthermore, the method may be implemented in any type of computing platform operably connected to a suitable one, including but not limited to personal computers, minicomputers, mainframes, workstations, network or distributed computing environments, separate or integrated computer platforms, or communicating with charged particle tools or other imaging devices, etc. Aspects of the present invention may be implemented in machine-readable code stored on a non-transitory storage medium or device, whether removable or integrated into the computing platform, such as a hard disk, optical read and / or write storage medium, RAM, ROM, etc., such that it can be read by a programmable computer and, when the storage medium or device is read by the computer, can be used to configure and operate the computer to perform the processes described herein. In addition, the machine-readable code, or portions thereof, may be transmitted via wired or wireless networks. When such media includes instructions or programs that implement the above-described steps in conjunction with a microprocessor or other data processor, the inventions described in this embodiment include these and other different types of non-transitory computer-readable storage media. When programmed according to the methods and techniques of the present invention, the present invention also includes the computer itself.

[0077] The computer program is capable of being applied to input data to perform the functions described in this embodiment, thereby transforming the input data to generate output data stored in non-volatile memory. The output information may also be applied to one or more output devices such as a display. In a preferred embodiment of the present invention, the transformed data represents physical and tangible objects, including a specific visual depiction of the physical and tangible objects generated on the display.

[0078] As described above, this is only a preferred embodiment of the present invention. The present invention is not limited to the above-described embodiments. As long as it achieves the technical effects of the present invention by the same means, any modifications, equivalent replacements, improvements, etc., made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention. Within the scope of protection of the present invention, its technical solutions and / or implementation manners may have various different modifications and variations.

Claims

1. A dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide, characterized in that, the dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide includes a first dielectric substrate and a second dielectric substrate, and the lower surface of the first dielectric substrate faces the upper surface of the second dielectric substrate; the upper surface of the first dielectric substrate is provided with a first metal layer, a first metal patch and a second metal patch. The first metal layer extends along the length direction of the first dielectric substrate. The first metal patch and the second metal patch divide the first metal layer into several parts. The first metal layer, the first metal patch and the second metal patch are respectively provided with several blank dielectric regions, and each of the blank dielectric regions is arranged along the extension direction of the first metal layer. One end of the first metal layer is provided with a first grounded coplanar waveguide, and the other end of the first metal layer is provided with a second grounded coplanar waveguide; in the first metal layer, a first transition structure is provided in the part between the first grounded coplanar waveguide and the closest blank dielectric region, and a second transition structure is provided in the part between the second grounded coplanar waveguide and the closest blank dielectric region; the lower surface of the first dielectric substrate is provided with a first microstrip line, a second microstrip line and a structure array; the structure array and a part of the first metal layer, the first metal patch and the second metal patch form a slow-wave parallel-plate waveguide; the first microstrip line is connected to one side of the structure array, the second microstrip line is connected to the other side of the structure array, the first microstrip line is connected to the first grounded coplanar waveguide through a through hole, and the second microstrip line is connected to the second grounded coplanar waveguide through a through hole; the upper surface of the second dielectric substrate is provided with a second metal layer, and several coupling slits are provided on the second metal layer. Each of the coupling slits respectively corresponds to the projection range of a corresponding blank dielectric region; the lower surface of the second dielectric substrate is provided with a microstrip power divider, and the microstrip power divider includes several output ends. Each of the output ends respectively corresponds to the projection range of a corresponding coupling slit.

2. The dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide according to claim 1, characterized in that, the dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide further includes a curing sheet, the curing sheet is located between the first dielectric substrate and the second dielectric substrate, and the first dielectric substrate and the second dielectric substrate are bonded together through the curing sheet.

3. The dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide according to claim 1, characterized in that, the structure array includes several periodically arranged square metal patches; each of the square metal patches is separated from the adjacent square metal patch by a slit. The projections of all the square metal patches on the upper surface of the first dielectric substrate surround all the blank dielectric regions, and each of the square metal patches is connected to the first metal layer, the first metal patch or the second metal patch through a via hole; In the structure array, a part of the square metal patches on one side is connected to the first microstrip line, and a part of the square metal patches on the other side is connected to the second microstrip line.

4. The dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide according to claim 3, wherein, in the first microstrip line and the second microstrip line, the width gradually narrows from the side connected to the structure array to the other side.

5. The dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide according to claim 1, wherein: the first transition structure and the second transition structure respectively include two rows of shielded via sequences; the shielded via sequence includes a plurality of shielded vias spaced at a certain distance from each other, one end of the shielded via is connected to the first metal layer, and the other end of the shielded via is connected to the second metal layer; the two rows of shielded via sequences in the first transition structure are respectively arranged on both sides of the first grounded coplanar waveguide, and the two rows of shielded via sequences in the second transition structure are respectively arranged on both sides of the second grounded coplanar waveguide.

6. The dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide according to claim 1, wherein, a plurality of tuning vias are provided on the second metal layer, each tuning via is respectively located beside a corresponding coupling slot, one end of each tuning via is connected to the second metal layer, and the other end is respectively connected to a corresponding output end in the microstrip power divider.

7. The dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide according to claim 1, wherein, the shapes of the first metal patch and the second metal patch are both I-shaped.

8. The dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide according to claim 7, wherein, a gap is provided between the first metal patch and the first metal layer and between the second metal patch and the first metal layer.

9. The dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide according to claim 1, wherein, the first metal patch and the second metal patch, the first grounded coplanar waveguide and the second grounded coplanar waveguide, and the first transition structure and the second transition structure are axisymmetric about the central axis of the first dielectric substrate.

10. The dual-band common-aperture antenna based on a slow-wave parallel-plate waveguide according to claim 1, wherein, the microstrip power divider is a multi-way equal-amplitude power divider.

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