Method, device, server, and equipment for realizing hot-plug switch synchronous correction current conduction

Abstract

The present invention belongs to the technical field of MOS transistor driving, and specifically provides a method, device, server, and equipment for realizing hot-swap switch synchronous correction and current conduction. The device includes a PCB board and a plurality of hot-swap switches connected in parallel on the PCB board and comparators with the same number as the hot-swap switches; the power supply terminals of the hot-swap switches are connected to the highest voltage layer of the PCB board through vias; the device further includes a control module, and the control terminals of each hot-swap switch are connected to the control module; each hot-swap switch is connected to a comparator, and the voltages at both ends of each hot-swap switch are input to the comparator, and the output terminal of the comparator is connected to the control module; the control module is used to output a high level to drive the hot-swap switch to work; receive the comparison result of the comparator and control and adjust the signal input to the hot-swap switch according to the comparison result output by the comparator, thereby adjusting the channel size of the hot-swap switch, so as to achieve balanced driving of each MOS transistor.

Description

Technical Field

[0001] The present invention relates to the technical field of MOS tube driving, and in particular to a method, device, server and equipment for realizing synchronous correction of hot-swap switch flow. Background Art

[0002] Existing hot-swap ICs use current to drive the gate-source voltage of the MOSFET, and use current to fill the gate-source capacitance of the MOSFET plus the drain-gate capacitance Ciss, so as to achieve the MOSFETV Vgs = Vth conduction condition. Subsequently, it must undergo the Miller platform effect before the MOSFET can be fully turned on and energy can fully pass through the MOSFET into the load end. Before it is fully turned on, the MOSFET impedance cannot fully withstand the input energy and is likely to burn out. However, this is a characteristic of the MOSFET process that cannot be eliminated but can only be alleviated. Once the controller needs to drive multiple MOSFETs synchronously, the driving situation will be unbalanced, causing the MOSFET Miller platform to be elongated or the conduction current to be uneven.

[0003] The current driver is used to fill the conduction energy required by the MOSFET parasitic capacitance Ciss=Cgs+Cgd and Crss=Cgd, so that Vgs rises to a voltage greater than the Vth threshold voltage, reaches the conduction condition, and then transmits energy to the load end.

[0004] The current source method is used to drive the full MOSFET parasitic capacitance Ciss+Crss to generate a Vgs voltage that is greater than the Vth conduction threshold voltage. The application scenario of this method is expanded to multiple parallel MOSFETs, resulting in a decrease in driving capability and driving quality. The condition of each on-MOSFET is uneven, and there may also be a time difference in the switch closing sequence when shutting down, resulting in uneven shutdown of the MOSFET, and a single one is subjected to a very large current during protection. Summary of the invention

[0005] The current source method is used to drive the full MOSFET parasitic capacitance Ciss+Crss to generate a Vgs voltage that is greater than the Vth conduction threshold voltage. The application scenario of this method is expanded to multiple parallel MOSFETs, which may cause the driving capability to be insufficient, the driving condition quality to be reduced, the condition of each turned-on MOSFET to be uneven, and there may also be a time difference in the switch closing sequence when shutting down, resulting in uneven shutdown of the MOSFET. During protection, a single MOSFET may be subjected to a very large current. The present invention provides a method, device, server, and equipment for realizing synchronous correction of the current of a hot-swap switch.

[0006] In a first aspect, the technical solution of the present invention provides a method for realizing synchronous correction of current flow of a hot-swap switch, wherein there are multiple hot-swap switches, and the method comprises the following steps:

[0007] Set multiple hot-swap switches to be connected in parallel, and connect the power supply terminal of the hot-swap switch to the highest voltage layer of the PCB board where the hot-swap switch is located through a via hole;

[0008] Set the control terminal of the hot-swap switch to be connected to the control module;

[0009] Set the voltage across each hot-swap switch to be input to a comparator, and set the comparator to output the comparison result to the control module;

[0010] During the operation of the hot-swap switch controlled by the control module, the control module controls and adjusts the signal input to the hot-swap switch according to the comparison result output by the comparator, thereby adjusting the channel size of the hot-swap switch.

[0011] As a further limitation of the technical solution of the present invention, each hot-swap switch includes a first MOS transistor and a second MOS transistor. The steps of setting multiple hot-swap switches to be connected in parallel and connecting the power supply terminal of the hot-swap switch to the highest voltage layer of the PCB board where the hot-swap switch is located through a via hole include:

[0012] Connect the drains of all the first MOS transistors as the input terminal, and connect the sources of all the first MOS transistors as the output terminal;

[0013] Connect the gate of the first MOS transistor to the source of the second MOS transistor;

[0014] The drain of the second MOS transistor is connected to the highest voltage layer of the PCB board through a via hole.

[0015] As a further limitation of the technical solution of the present invention, the steps of setting the control terminal of the hot-swap switch to be connected to the control module include:

[0016] Set the gate of the second MOS transistor to be connected to the control module for providing the conduction current of the second MOS transistor.

[0017] As a further limitation of the technical solution of the present invention, the steps of setting each hot-swap switch to be connected to a comparator, inputting the voltage across each hot-swap switch to the comparator, and setting the comparator to output the comparison result to the control module include:

[0018] Set the drain of the first MOS transistor to be connected to the first input terminal of the comparator, and the source of the first MOS transistor to be connected to the second input terminal of the comparator;

[0019] Set the power supply terminal of the comparator to be connected to the connection point between the source of the second MOS transistor and the gate of the first MOS transistor;

[0020] Set the comparator to output the comparison result to the control module.

[0021] As a further limitation of the technical solution of the present invention, during the process of the control module controlling the hot pluggable switch, the steps of controlling and adjusting the signal input to the hot pluggable switch according to the comparison result output by the comparator and then adjusting the channel size of the hot pluggable switch include:

[0022] During the process of the control module controlling the hot pluggable switch, according to the comparison result output by the comparator, the driving level input to the second MOS transistor is adjusted, the voltage across each first MOS transistor is cyclically input to the comparator, and then the Vgs voltage of the second MOS transistor is gradually lowered until the voltage difference between the drain and source of each first MOS transistor is within the set threshold, so as to make the current passing through each first MOS transistor the same.

[0023] In a second aspect, the technical solution of the present invention further provides a hot pluggable switch synchronous correction current passing implementation device designed according to the method described in the first aspect, including a PCB board and a plurality of hot pluggable switches connected in parallel and comparators with the same number as the hot pluggable switches arranged on the PCB board; the power supply terminal of the hot pluggable switch is connected to the highest voltage layer of the PCB board through a via hole;

[0024] The device further includes a control module, and the control terminal of each hot pluggable switch is connected to the control module;

[0025] Each hot pluggable switch is connected to a comparator, the voltage across each hot pluggable switch is input to the comparator, and the output terminal of the comparator is connected to the control module;

[0026] The control module is used to output a high level to drive the hot pluggable switch to work; receive the comparison result of the comparator and control and adjust the signal input to the hot pluggable switch according to the comparison result output by the comparator, so as to adjust the channel size of the hot pluggable switch.

[0027] As a further limitation of the technical solution of the present invention, each hot pluggable switch includes a first MOS transistor and a second MOS transistor;

[0028] The drains of all the first MOS transistors are connected, and the sources of all the first MOS transistors are connected;

[0029] The gate of the first MOS transistor is connected to the source of the second MOS transistor;

[0030] The drain of the second MOS transistor is connected to the highest voltage layer of the PCB board through a via hole;

[0031] The gate of the second MOS transistor is connected to the control module for providing the conduction voltage of the second MOS transistor.

[0032] As a further limitation of the technical solution of the present invention, the drain of the first MOS transistor is connected to the first input terminal of the comparator, the source of the first MOS transistor is connected to the second input terminal of the comparator, and the power supply terminal of the comparator is connected to the connection point between the source of the second MOS transistor and the gate of the first MOS transistor; the output terminal of the comparator is connected to the control module;

[0033] The control module is used to control the operation of the hot plug switch. According to the comparison result output by the comparator, it adjusts the level of the driving voltage input to the second MOS transistor, and gradually reduces the Vgs voltage of the second MOS transistor by cyclically inputting the voltage across the first MOS transistor to the comparator until the voltage difference between the drain and source of each first MOS transistor is within the set threshold, thereby realizing that the current passing through each first MOS transistor is the same.

[0034] In a third aspect, the technical solution of the present invention provides a server, including the hot plug switch synchronous correction current passing realization device as described in the second aspect.

[0035] In a fourth aspect, the technical solution of the present invention provides an electronic device, including the hot plug switch synchronous correction current passing realization device as described in the second aspect.

[0036] It can be seen from the above technical solutions that the present invention has the following advantages: by instantaneously converting the voltage method into a current source, it can achieve balanced driving of each MOS transistor, without being limited by the driving ability of the controller itself, and can adjust the channel size during the conduction of the MOS transistor.

[0037] In addition, the design principle of the present invention is reliable, the structure is simple, and it has a very wide application prospect.

[0038] It can be seen that compared with the prior art, the present invention has outstanding substantial features and significant progress, and the beneficial effects of its implementation are also obvious. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative efforts.

[0040] Figure 1 It is a schematic flowchart of the method according to an embodiment of the present invention.

[0041] Figure 2 It is a conduction curve diagram of the MOSFET component.

[0042] Figure 3 It is a schematic diagram showing uneven driving of the MOSFET caused by the actual layout.

[0043] Figure 4 It is a schematic block diagram of the device provided by the present invention. Detailed implementation manners

[0044] If it is necessary to drive the MOSFET to turn on or off, or under the condition of constant conduction, reference can be made to Figure 2 , the conduction curve diagram of the MOSFET component. In the early conduction condition, Cgs must meet the power-on condition so as to achieve the necessary condition of Vgs > Vth. After passing through the Miller plateau, the curve gradually rises until full conduction is achieved. Generally speaking, the wiring of the circuit is just to connect the lines, but if this situation is applied to the actual situation, it will be limited by the layout of the PCB board. If the layout is not good, it is very likely that the driving conditions of each MOSFET will be uneven. Therefore, this method proposes to directly utilize the part of the driving voltage at the highest voltage of the PCB board. Generally, when considering the highest voltage current-carrying path, the PCB board will be designed to cover a large area of the PCB. Therefore, only one via is needed to connect to the highest voltage layer to obtain the driving voltage without the need to transmit current through the controller, improving the general current-driven method. Only a small voltage is needed to drive a smaller capacity to operate the MOSFET. However, for the MOSFET manufacturing process, it is impossible to control each Ciss and Crss to be consistent, and it is also impossible to eliminate the influence of the parasitic capacitance of the MOSFET itself in the manufacturing process. Therefore, the driving energy can be directly extracted from the highest voltage on the PCB board and directly injected into the switching-level MOSFET, which can reduce the limitation of the layout method on the current drive, greatly reduce the influencing factors of the layout, and can also eliminate the limitation of the driving ability of a single controller due to the current drive ability. Therefore, the number of MOSFETs can be increased. On the contrary, in case of overcurrent, the controller needs to actively send a signal to turn off the switching-level MOSFET, and the single drive can also be used to turn off to avoid the influence of the layout method on the turn-off situation.

[0045] Because in fact, the layout cannot be perfect, it can also be seen that the controller will also affect the driving of the MOSFET at different positions. For example, Figure 3 As shown, for example, the controller at position A drives the MOSFET through a series layout, and the MOSFET5 at the end is most affected and may not switch completely. The driving source voltage is transmitted to the end, resulting in a lower voltage at the end. This is one of the situations. Because the parameters such as Vgs, Ciss, and Crss of each MOSFET that need to achieve the conduction condition are different, the conduction conditions of the MOSFETs are different. All the energy will only flow through the first 4 MOSFETs, resulting in a situation where in the original design using 5 MOSFETs, only the first 4 MOSFETs with better conduction conditions in the early stage can be used, violating the initial design and possibly reducing the lifespan of the MOSFET.

[0046] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0047] How to control the regulation means to achieve MOSFET current sharing mode, please refer to Figure 4 , detect the voltage across the MOSFET to obtain the current flowing through the single MOSFET, and then adjust the driving voltage. The reason is that the on-resistance parameters of each MOSFET are also different, but the driving voltage can be used to control the on-resistance to adjust the current flowing through each MOSFET. The current flowing through each MOSFET is imported into the comparison loop. If there is a MOSFET with a higher current flowing through it, the Vgs voltage can be gradually lowered, and then the MOSFET current comparison loop is repeatedly imported until the current of each MOSFET is the same, and vice versa. This method can achieve the final stable current sharing, which can increase reliability, average the risk of MOSFET heat dissipation temperature, and increase system reliability for system operations with larger load conditions.

[0048] like Figure 1 As shown, an embodiment of the present invention provides a method for realizing synchronous correction of hot-swap switch flow, wherein there are multiple hot-swap switches, and the method comprises the following steps:

[0049] Step 1: Connect multiple hot-swap switches in parallel, and connect the power supply end of the hot-swap switch to the highest voltage layer of the PCB board where the hot-swap switch is located through a via;

[0050] Step 2: Set the control end of the hot-swap switch to connect to the control module;

[0051] Step 3: Set each hot-swap switch to be connected to a comparator, input the voltage across each hot-swap switch to the comparator, and set the comparator to output the comparison result to the control module;

[0052] Step 4: During the operation of the hot-swap switch, the control module controls and adjusts the signal input to the hot-swap switch according to the comparison result output by the comparator, thereby adjusting the channel size of the hot-swap switch.

[0053] In some embodiments, each hot-swap switch includes a first MOS transistor and a second MOS transistor, and the steps of connecting the plurality of hot-swap switches in parallel and connecting the power supply end of the hot-swap switch to the highest voltage layer of the PCB board where the hot-swap switch is located through a via hole include:

[0054] Step 11: Connect the drains of all the first MOS transistors as the input terminal, and connect the sources of all the first MOS transistors as the output terminal;

[0055] Step 12: Connect the gate of the first MOS transistor to the source of the second MOS transistor;

[0056] Step 13: Connect the drain of the second MOS transistor to the highest voltage layer of the PCB board through a via.

[0057] As a further limitation of the embodiment of the present invention, the steps of setting the control terminal of the hot-swap switch to be connected to the control module include:

[0058] Set the gate of the second MOS transistor to be connected to the control module for providing the conduction current of the second MOS transistor.

[0059] As a further limitation of the embodiment of the present invention, the steps of setting each hot-swap switch to be connected to a comparator, inputting the voltages at both ends of each hot-swap switch into the comparator, and setting the comparator to output the comparison result to the control module include:

[0060] Step 31: Set the drain of the first MOS transistor to be connected to the first input terminal of the comparator, and the source of the first MOS transistor to be connected to the second input terminal of the comparator;

[0061] Step 32: Set the power supply terminal of the comparator to be connected to the connection point between the source of the second MOS transistor and the gate of the first MOS transistor;

[0062] Step 33: Set the comparator to output the comparison result to the control module.

[0063] As a further limitation of the technical solution of the present invention, during the process of the control module controlling the hot-swap switch, the steps of controlling and adjusting the signal input to the hot-swap switch according to the comparison result output by the comparator and then adjusting the channel size of the hot-swap switch include:

[0064] During the process of the control module controlling the hot-swap switch, according to the comparison result output by the comparator, adjust the high and low of the driving level input to the second MOS transistor, cyclically input the voltage across each first MOS transistor into the comparator, and then gradually lower the Vgs voltage of the second MOS transistor until the voltage difference between the drain and source of each first MOS transistor is within the set threshold, so as to make the current passing through each first MOS transistor the same.

[0065] Such as Figure 4As shown in the figure, an embodiment of the present invention further provides a hot-swap switch synchronous correction current-carrying implementation device, which includes a PCB board and a plurality of hot-swap switches connected in parallel and comparators with the same number as the hot-swap switches arranged on the PCB board; the power supply terminal of the hot-swap switch is connected to the highest voltage layer of the PCB board through a via; Figure 4 In Figure 4 , the DC is the power supply obtained by connecting to the highest voltage layer of the PCB board through a via;

[0066] The device further includes a control module, and the control terminal of each hot-swap switch is connected to the control module;

[0067] Each hot-swap switch is connected to a comparator, the voltages at both ends of each hot-swap switch are input to the comparator, and the output terminal of the comparator is connected to the control module;

[0068] The control module is used to output a high level to drive the hot-swap switch to work; receive the comparison result of the comparator and control and adjust the signal input to the hot-swap switch according to the comparison result output by the comparator, thereby adjusting the channel size of the hot-swap switch.

[0069] As a further limitation of the technical solution of the present invention, each hot-swap switch includes a first MOS transistor and a second MOS transistor; in Figure 4 Figure 4 , the first MOS transistor of the first hot-swap switch is Q11 and the second MOS transistor of the first hot-swap switch is Q12, and they are arranged in sequence. The first MOS transistor of the nth hot-swap switch is Qn1 and the second MOS transistor of the nth hot-swap switch is Qn2.

[0070] The drains of all the first MOS transistors are connected, and the sources of all the first MOS transistors are connected;

[0071] The gate of the first MOS transistor is connected to the source of the second MOS transistor;

[0072] The drain of the second MOS transistor is connected to the highest voltage layer of the PCB board through a via; that is to say, the drain of the second MOS transistor of each hot-swap switch is connected to the highest voltage layer of the PCB board through a via, that is, connected to DC.

[0073] The gate of the second MOS transistor is connected to the control module for providing the conduction voltage of the second MOS transistor.

[0074] As a further limitation of the technical solution of the present invention, the drain of the first MOS transistor is connected to the first input terminal of the comparator, the source of the first MOS transistor is connected to the second input terminal of the comparator, the power supply terminal of the comparator is connected to the connection point between the source of the second MOS transistor and the gate of the first MOS transistor; the output terminal of the comparator is connected to the control module;

[0075] That is to say, each hot pluggable switch is connected to a comparator, and the voltages at both ends of each hot pluggable switch are input to the comparator. The output end of the comparator is connected to the control module;

[0076] The first hot pluggable switch is connected to the first comparator U1, and so on. The nth hot pluggable switch is connected to the nth comparator Un.

[0077] That is, the drain of the first MOS transistor of the first hot pluggable switch serves as the total input terminal Input, and the source of the first MOS transistor of the last hot pluggable switch serves as the total output terminal Output.

[0078] The control module is used to control the operation of the hot pluggable switch. In each hot pluggable switch, according to the comparison result output by the comparator, the driving level input to the second MOS transistor is adjusted. By cyclically inputting the voltage across the first MOS transistor to the comparator, the Vgs voltage of the second MOS transistor is gradually reduced until the voltage difference between the drain and source of each first MOS transistor is within the set threshold, so as to make the current passing through each first MOS transistor the same.

[0079] In this embodiment, the voltage mode is instantaneously converted into an enhanced maximum current source to achieve balanced driving of each MOSFET, without being limited by the driving ability of the controller itself, and an adjustable channel size is given during the conduction period of the MOSFET.

[0080] An embodiment of the present invention provides a server, including a device for realizing hot pluggable switch synchronous correction and current passing. The device includes a PCB board and a plurality of hot pluggable switches connected in parallel and comparators with the same number as the hot pluggable switches arranged on the PCB board. The power supply terminal of the hot pluggable switch is connected to the highest voltage layer of the PCB board through a via. In this embodiment, the device further includes a control module, and the control terminal of each hot pluggable switch is connected to the control module;

[0081] Each hot pluggable switch is connected to a comparator, and the voltages at both ends of each hot pluggable switch are input to the comparator. The output end of the comparator is connected to the control module;

[0082] The control module is used to output a high level to drive the hot pluggable switch to work; receive the comparison result of the comparator and control and adjust the signal input to the hot pluggable switch according to the comparison result output by the comparator, thereby adjusting the channel size of the hot pluggable switch.

[0083] Each hot pluggable switch includes a first MOS transistor and a second MOS transistor;

[0084] The drains of all the first MOS transistors are connected, and the sources of all the first MOS transistors are connected;

[0085] The gate of the first MOS transistor is connected to the source of the second MOS transistor;

[0086] The drain of the second MOS transistor is connected to the highest voltage layer of the PCB board through a via;

[0087] The gate of the second MOS transistor is connected to a control module for providing a conduction voltage for the second MOS transistor.

[0088] The drain of the first MOS transistor is connected to the first input terminal of the comparator, the source of the first MOS transistor is connected to the second input terminal of the comparator, the power supply terminal of the comparator is connected to the connection point between the source of the second MOS transistor and the gate of the first MOS transistor; the output terminal of the comparator is connected to the control module;

[0089] The control module is used to control the hot plug switch during operation, adjust the driving level input to the second MOS transistor according to the comparison result output by the comparator, gradually lower the Vgs voltage of the second MOS transistor by cyclically inputting the voltage across the first MOS transistor to the comparator until the voltage difference between the drain and source of each first MOS transistor is within the set threshold, thereby achieving the same current passing through each first MOS transistor.

[0090] An embodiment of the present invention provides an electronic device, including a hot plug switch synchronous correction current passing implementation device; the device includes a PCB board and a plurality of hot plug switches connected in parallel and comparators with the same number as the hot plug switches arranged on the PCB board; the power supply terminal of the hot plug switch is connected to the highest voltage layer of the PCB board through a via; in this embodiment, the device further includes a control module, and the control terminal of each hot plug switch is connected to the control module;

[0091] Each hot plug switch is connected to a comparator, the voltage across each hot plug switch is input to the comparator, and the output terminal of the comparator is connected to the control module;

[0092] The control module is used to output a high level to drive the hot plug switch to work; receive the comparison result of the comparator and control and adjust the signal input to the hot plug switch according to the comparison result output by the comparator, thereby adjusting the channel size of the hot plug switch.

[0093] Each hot plug switch includes a first MOS transistor and a second MOS transistor;

[0094] The drains of all the first MOS transistors are connected, and the sources of all the first MOS transistors are connected;

[0095] The gate of the first MOS transistor is connected to the source of the second MOS transistor;

[0096] The drain of the second MOS transistor is connected to the highest voltage layer of the PCB board through a via;

[0097] The gate of the second MOS transistor is connected to a control module for providing a conduction voltage for the second MOS transistor.

[0098] The drain of the first MOS transistor is connected to the first input terminal of the comparator, the source of the first MOS transistor is connected to the second input terminal of the comparator, and the power supply terminal of the comparator is connected to the connection point between the source of the second MOS transistor and the gate of the first MOS transistor; the output terminal of the comparator is connected to the control module;

[0099] The control module is configured to control the hot plug switch. During the operation, according to the comparison result output by the comparator, it adjusts the level of the driving voltage input to the second MOS transistor, and gradually reduces the Vgs voltage of the second MOS transistor by cyclically inputting the voltage across the first MOS transistor to the comparator until the voltage difference between the drain and the source of each first MOS transistor is within the set threshold, thereby making the current passing through each first MOS transistor the same.

[0100] Although the present invention has been described in detail by referring to the accompanying drawings and in conjunction with the preferred embodiments, the present invention is not limited thereto. Without departing from the spirit and essence of the present invention, those of ordinary skill in the art can make various equivalent modifications or substitutions to the embodiments of the present invention, and these modifications or substitutions should all be within the scope of the present invention. / Any person skilled in the art within the technical scope disclosed by the present invention can easily think of changes or substitutions, which should all be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims

1. A method for realizing hot-pluggable switch synchronization correction and current conduction, characterized in that There are multiple hot-swap switches, and the method includes the following steps: Set the multiple hot-swap switches to be connected in parallel, and connect the power supply terminal of the hot-swap switch to the highest voltage layer of the PCB where the hot-swap switch is located through a via; Set the control terminal of the hot-swap switch to be connected to the control module; Input the voltage across each hot-swap switch into a comparator, and set the comparator to output the comparison result to the control module; During the operation of the hot-swap switch controlled by the control module, adjust the signal input to the hot-swap switch according to the comparison result output by the comparator, thereby adjusting the channel size of the hot-swap switch; Each hot-swap switch includes a first MOS transistor and a second MOS transistor. The step of setting the multiple hot-swap switches to be connected in parallel and connecting the power supply terminal of the hot-swap switch to the highest voltage layer of the PCB where the hot-swap switch is located through a via includes: Connect the drains of all the first MOS transistors as the input terminal, and connect the sources of all the first MOS transistors as the output terminal; Connect the gate of the first MOS transistor to the source of the second MOS transistor; Connect the drain of the second MOS transistor to the highest voltage layer of the PCB through a via; The step of setting the control terminal of the hot-swap switch to be connected to the control module includes: Set the gate of the second MOS transistor to be connected to the control module for providing the conduction current of the second MOS transistor; Set each hot-swap switch to be connected to a comparator, input the voltage across each hot-swap switch into the comparator, and the step of setting the comparator to output the comparison result to the control module includes: Set the drain of the first MOS transistor to be connected to the first input terminal of the comparator, and the source of the first MOS transistor to be connected to the second input terminal of the comparator; Set the power supply terminal of the comparator to be connected to the connection point between the source of the second MOS transistor and the gate of the first MOS transistor; Set the comparator to output the comparison result to the control module; During the operation of the hot-swap switch controlled by the control module, the step of adjusting the signal input to the hot-swap switch according to the comparison result output by the comparator, thereby adjusting the channel size of the hot-swap switch includes: During the operation of the hot-swap switch controlled by the control module, adjust the high and low of the driving level input to the second MOS transistor according to the comparison result output by the comparator, and cyclically input the voltage across each first MOS transistor into the comparator, thereby gradually reducing the Vgs voltage of the second MOS transistor until the voltage difference between the drain and source of each first MOS transistor is within the set threshold, so as to make the current passing through each first MOS transistor the same.

2. A hot-pluggable switch synchronous correction current-carrying implementation device, characterized in that It includes a PCB board and a number of hot-swap switches connected in parallel and the same number of comparators as the number of hot-swap switches arranged on the PCB board; connect the power supply terminal of the hot-swap switch to the highest voltage layer of the PCB through a via; The device further includes a control module, and the control terminal of each hot-swap switch is connected to the control module; Each hot-swap switch is connected to a comparator, input the voltage across each hot-swap switch into the comparator, and the output terminal of the comparator is connected to the control module; The control module is used to output a high level to drive the hot-swap switch to work; Receive the comparison result of the comparator and control the signal input to the hot pluggable switch according to the comparison result output by the comparator, thereby adjusting the channel size of the hot pluggable switch; Each hot pluggable switch includes a first MOS transistor and a second MOS transistor; The drains of all the first MOS transistors are connected, and the sources of all the first MOS transistors are connected; The gate of the first MOS transistor is connected to the source of the second MOS transistor; The drain of the second MOS transistor is connected to the highest voltage layer of the PCB through a via; The gate of the second MOS transistor is connected to a control module for providing a conduction voltage for the second MOS transistor; The drain of the first MOS transistor is connected to the first input terminal of the comparator, the source of the first MOS transistor is connected to the second input terminal of the comparator, the power supply terminal of the comparator is connected to the connection point between the source of the second MOS transistor and the gate of the first MOS transistor; the output terminal of the comparator is connected to the control module; A control module, which is used to control the hot pluggable switch during operation, adjust the level of the driving voltage input to the second MOS transistor according to the comparison result output by the comparator, and gradually lower the Vgs voltage of the second MOS transistor by cyclically inputting the voltage across the first MOS transistor to the comparator until the voltage difference between the drain and source of each first MOS transistor is within the set threshold, thereby achieving the same current passing through each first MOS transistor.

3. A server, characterized in that, It includes the hot pluggable switch synchronous correction current passing implementation device as described in claim 2.

4. An electronic device, characterized in that, It includes the hot pluggable switch synchronous correction current passing implementation device as described in claim 2.

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