Semiconductor structure and preparation method thereof, micro device transfer method and display panel

Abstract

The application relates to a semiconductor structure, a preparation method thereof, a micro device transfer method and a display panel. The preparation method of the semiconductor structure comprises the following steps: providing a first temporary substrate; coating an adhesion layer on the surface of the first temporary substrate; providing a substrate, forming a plurality of micro devices on the substrate; embedding the micro devices into the adhesion layer; removing the substrate to expose the light-out surface of the micro devices; after removing the substrate, the light-out surface of the micro devices has residual metal; removing the residual metal while etching the adhesion layer to form a weakened structure; and etching the adhesion layer to complete the weakened structure. The residual metal is removed at the same time in the etching process, the cost is saved, the process complexity of the weakened structure is reduced, the light-out efficiency of the light-out surface of the micro device is improved, and the transfer difficulty of the micro device moving to the back plate is reduced.

Description

Technical Field

[0001] This invention relates to the field of mass transfer technology, and more particularly to semiconductor structures and their fabrication methods, microdevice transfer methods, and display panels. Background Technology

[0002] Micro LED displays, as a new generation of display technology, offer higher brightness, better luminous efficiency, lower power consumption, and longer lifespan compared to liquid crystal displays (LCDs) and organic light-emitting diode (OLEDs).

[0003] Currently, the key technology facing Micro LED is to transfer Micro LED chips to the driver backplane through mass transfer. Typically, the Micro LED matrix is ​​first bonded to the transient substrate with adhesive, and the back substrate of the Micro LED chip is peeled off by laser lift-off (LLO) technology. The Micro LED chip is then transferred to the transient substrate, and a large number of Micro LED chips are picked up at once by transfer structure imprinting technology. Finally, the whole assembly is placed on the driver backplane.

[0004] However, during the laser lift-off process, the epitaxial layer between the Micro LED chip and the substrate decomposes, producing residual metal that remains on the back of the Micro LED chip, thereby reducing the chip's light extraction efficiency. At the same time, the above process requires the adhesive to be detached by heat or light to transfer the chip onto the transfer structure. The process is complex and cannot achieve selective transfer, making mass transfer difficult.

[0005] Therefore, improving the luminous efficiency of Micro LED chips after transfer and reducing manufacturing processes are urgent problems to be solved. Summary of the Invention

[0006] In view of the shortcomings of the prior art, the purpose of this application is to provide a semiconductor structure and its preparation method, a microdevice transfer method and a display panel, aiming to solve the problems in the prior art, such as residual metal generated by laser stripping remaining on the back of the MicroLED chip, reducing the luminous efficiency of the MicroLED chip, and the complexity of the mass transfer process.

[0007] A method for fabricating a semiconductor structure, comprising:

[0008] Provide a first transient substrate;

[0009] An adhesive layer is coated on the surface of the first transient substrate;

[0010] A substrate is provided on which a plurality of microdevices are formed;

[0011] The microdevice is embedded within the adhesive layer;

[0012] The substrate is removed to expose the light-emitting surface of the microdevice; after removing the substrate, the light-emitting surface of the microdevice has residual metal.

[0013] The adhesive layer is etched while the residual metal is removed to form a weakened structure.

[0014] In the above-mentioned semiconductor structure fabrication method, an adhesive layer is formed on a first transient substrate, and multiple microdevices are formed on the provided substrate and embedded in the adhesive layer. When the substrate is removed, the light-emitting surface of the microdevice is exposed, while there is residual metal on the light-emitting surface of the microdevice. Finally, the adhesive layer is etched to complete the fabrication of the weakened structure. The residual metal is removed during the etching process, which saves costs, reduces the process complexity of the weakened structure, improves the light-emitting efficiency of the light-emitting surface of the microdevice, and reduces the difficulty of transferring the microdevice to the backplane.

[0015] Optionally, the cross-sectional dimension of the weakening structure is smaller than the cross-sectional dimension of the microdevice. By setting the cross-sectional dimension of the weakening structure to be smaller than that of the microdevice, the contact area between the weakening structure and the microdevice is reduced, allowing the microdevice to be directly detached from the microdevice without any additional processing during the microdevice transfer process, thus achieving microdevice transfer.

[0016] Optionally, the adhesive layer includes a pyrolytic adhesive layer; the removal of the residual metal and etching of the adhesive layer to form a weakened structure includes: etching the adhesive layer during the removal of the residual metal using a reactive ion etching process to obtain the weakened structure. High-energy gas introduced into the cavity is dissociated into high-energy plasma under a high-frequency electric field and reacts with the residual metal to remove it; during the removal of the residual metal, the physical bombardment capability of the high-energy plasma itself is used to etch the morphology of the adhesive layer to form a weakened structure. This one-step process removes the residual metal and forms the weakened structure, reducing the process difficulty of the weakened structure fabrication and improving the light extraction efficiency of the microdevice.

[0017] Optionally, before forming a plurality of microdevices on the substrate, the method further includes: forming a gallium-containing epitaxial layer on the surface of the substrate; the formation of a plurality of microdevices on the substrate includes: forming an epitaxial layer on the surface of the gallium-containing epitaxial layer away from the substrate; forming a first electrode and a second electrode on the surface of the epitaxial layer away from the gallium-containing epitaxial layer; the residual metal includes metallic gallium.

[0018] Optionally, removing the substrate to expose the light-emitting surface of the microdevice includes: removing the substrate using a laser lift-off process; wherein the laser energy is greater than the bandgap width of the gallium-containing epitaxial layer and less than the bandgap width of the substrate. During the laser lift-off process, the gallium-containing epitaxial layer on the light-emitting surface of the microdevice is thermally decomposed, thereby achieving separation of the gallium-containing epitaxial layer or the microdevice from the substrate.

[0019] Based on the same inventive concept, this application also provides a semiconductor structure, which is obtained by the semiconductor structure preparation method described above.

[0020] In the aforementioned semiconductor structure, since the semiconductor structure is prepared using the above-mentioned method that has high light extraction efficiency of the light-emitting surface of the microdevice and low difficulty in transferring the microdevice to the back plate, the semiconductor structure also has high light extraction efficiency of the light-emitting surface of the microdevice and low difficulty in transferring the microdevice to the back plate.

[0021] Based on the same inventive concept, this application also provides a method for transferring microdevices, comprising:

[0022] The semiconductor structure is prepared using the semiconductor structure preparation method described above;

[0023] Provides transfer structure and drive backplane;

[0024] The microdevice is transferred to the surface of the drive backplane using the transfer structure.

[0025] In the above-mentioned microdevice transfer method, the semiconductor structure is prepared by a semiconductor structure preparation method with high light extraction efficiency and simple preparation process. The microdevice is then transferred to the surface of the driving backplate by the provided transfer structure and driving backplate to complete the transfer of the microdevice. This improves the overall light emission brightness of the driving backplate after transfer and reduces the difficulty of microdevice transfer.

[0026] Optionally, the step of using the transfer structure to transfer the microdevice to the driving backplane surface includes: heating the first transient substrate, picking up the microdevice using the transfer structure, and transferring the picked-up microdevice to the driving backplane surface.

[0027] Optionally, the transfer structure includes a second transient substrate and a transfer member, the transfer member being located on the surface of the second transient substrate; the step of using the transfer structure to transfer the microdevice to the surface of the driving backplane includes: using the transfer member to pick up the microdevice and transferring the microdevice to the surface of the driving backplane.

[0028] Based on the same inventive concept, this application also provides a display panel, including a driving backplate and a plurality of microdevices fixed on the driving backplate, wherein the plurality of microdevices are transferred to the surface of the driving backplate using the microdevice transfer method described above.

[0029] In the aforementioned display panel, a microdevice transfer method with high light extraction efficiency and simple fabrication process is used to transfer multiple microdevices to the surface of the driving backplane, resulting in a display panel with high luminous brightness and reduced manufacturing cost and cycle time. Attached Figure Description

[0030] Figure 1 This is a schematic flowchart of a method for fabricating a semiconductor structure provided in one embodiment of this application;

[0031] Figure 2 This is a partial cross-sectional schematic diagram of an adhesive layer formed on a first transient substrate according to an embodiment of this application;

[0032] Figure 3 This is a partial cross-sectional schematic diagram of the substrate and microdevice provided in one embodiment of this application;

[0033] Figure 4 This is a partial cross-sectional schematic diagram of the structure obtained after bonding the microdevice to the adhesive layer in one embodiment of this application;

[0034] Figure 5 This is a partial cross-sectional schematic diagram of the structure obtained after removing the substrate using a laser lift-off process according to an embodiment of this application;

[0035] Figure 6 This is a partial cross-sectional schematic diagram of a semiconductor structure provided in one embodiment of this application;

[0036] Figure 7 This is a schematic flowchart of a microdevice transfer method provided in one embodiment of this application;

[0037] Figure 8a This is a partial cross-sectional schematic diagram of the transfer structure provided in one embodiment of this application;

[0038] Figure 8b This is a partial cross-sectional schematic diagram of the structure obtained after removing the weakened structure and the first transient substrate in one embodiment of this application;

[0039] Figure 8c This is a partial cross-sectional schematic diagram of the structure obtained after the microdevice is transferred to the driving backplane in one embodiment of this application;

[0040] Figure 9a This is a partial cross-sectional schematic diagram of the transfer structure provided in another embodiment of this application;

[0041] Figure 9b This is a partial cross-sectional schematic diagram of the structure obtained after removing the weakened structure and the first transient substrate, provided in another embodiment of this application.

[0042] Figure 9c This is a partial cross-sectional schematic diagram of the structure obtained after the microdevice is transferred to the drive backplane according to another embodiment of this application.

[0043] Explanation of reference numerals in the attached figures:

[0044] 100 - Semiconductor structure, 11 - First transient substrate, 12 - Adhesive layer, 13 - Weakening structure;

[0045] 21-Substrate, 22-Microdevice, 221-Epilithography, 222-First electrode, 223-Second electrode, 23-Gallium-containing epitaxial layer, 231-Residual metal;

[0046] 31-Transfer structure, 311-Second transient substrate, 312-Transfer component, 32-Drive backplate, 33-Contact electrode. Detailed Implementation

[0047] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0048] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application.

[0049] In existing technologies, laser lift-off is typically used to separate the substrate from the Micro LED chip. However, after lift-off, metal residue remains on the light-emitting surface of the Micro LED chip, which significantly affects its light extraction efficiency. Furthermore, the adhesive layer needs to be debonded using heat or light to transfer the Micro LED chip. These two issues complicate the Micro LED chip transfer process, making large-scale transfer difficult, resulting in low overall luminous efficiency of the fabricated display panel, long manufacturing cycles, and high costs.

[0050] Therefore, this application aims to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in subsequent embodiments.

[0051] In one embodiment of this application, such as Figure 1 As shown, a method for fabricating a semiconductor structure is provided, comprising the following steps:

[0052] Step S10: Provide a first transient substrate;

[0053] Step S20: Apply an adhesive layer to the surface of the first transient substrate;

[0054] Step S30: Provide a substrate and form a plurality of microdevices on the substrate;

[0055] Step S40: Embed the microdevice within the adhesive layer;

[0056] Step S50: Remove the substrate to expose the light-emitting surface of the microdevice; after removing the substrate, the light-emitting surface of the microdevice has residual metal.

[0057] Step S60: Remove residual metal while etching the adhesive layer to form a weakened structure.

[0058] In the above-mentioned semiconductor structure fabrication method, an adhesive layer is formed on a first transient substrate, and multiple microdevices are formed on the provided substrate and embedded in the adhesive layer. When the substrate is removed, the light-emitting surface of the microdevice is exposed, while there is residual metal on the light-emitting surface of the microdevice. Finally, the adhesive layer is etched to complete the fabrication of the weakened structure. The residual metal is removed during the etching process, which saves costs, reduces the process complexity of the weakened structure, improves the light-emitting efficiency of the light-emitting surface of the microdevice, and reduces the difficulty of transferring the microdevice to the backplane.

[0059] As an example, such as Figure 2 As shown, the material of the first transient substrate 11 provided in step S10 may include, but is not limited to, glass, sapphire (Al2O3) or quartz; that is, the first transient substrate 11 may include, but is not limited to, a glass substrate, a sapphire substrate or a quartz substrate.

[0060] As an example, please continue reading Figure 2 The adhesive layer 12 can be prepared by methods such as spin coating, chemical vapor deposition (CVD), or atomic layer deposition (ALD). This application does not limit the preparation method.

[0061] As an example, the material of the adhesive layer 12 includes, but is not limited to, pyrolytic adhesive; the adhesive layer 12 includes, but is not limited to, a pyrolytic adhesive layer; the material of the pyrolytic adhesive layer includes, but is not limited to, hydroxides.

[0062] As an example, the thickness of the adhesive layer 12 may include 10um-15um; for example, the thickness of the adhesive layer 12 may be 10um, 11um, 12um, 13um, 14um or 15um, etc.

[0063] As an example, the thickness of the adhesive layer 12 can be greater than the height of the microdevice, so that the microdevice can be fully embedded in the adhesive layer 12 after heat bonding, and a certain thickness of adhesive layer 12 is still retained between the microdevice and the first transient substrate 11.

[0064] In one embodiment, such as Figure 3 As shown, the material of the substrate 21 provided in step S30 may include, but is not limited to, sapphire (Al2O3), silicon carbide (SiC), silicon (Si) or gallium arsenide (GaAs), etc.; the substrate 21 may include, but is not limited to, sapphire substrate, silicon carbide substrate, silicon substrate or gallium arsenide substrate, etc.; the microdevice 22 may include, but is not limited to, Micro LED chip, Mini LED chip photodetector diode, MOS device or MEMS (Micro-Electro-Mechanical System) device, etc.

[0065] In one embodiment, please refer to... Figure 3 The substrate 21 has a plurality of microdevices 22 on its surface, which are arranged in an array and can be arranged at equal intervals or at non-equal intervals. To facilitate the picking up of the microdevices during the subsequent transfer process, the plurality of microdevices 22 are arranged at equal intervals on the surface of the substrate 21. The spacing can be determined according to the actual process parameters, and this application does not limit it.

[0066] In one embodiment, please refer to... Figure 3 S30: Before forming a plurality of microdevices 22 on the substrate 21, the following steps are also included:

[0067] Step S201: A gallium-containing epitaxial layer 23 is formed on the surface of the substrate 21.

[0068] As an example, the material of the gallium-containing epitaxial layer 23 may include, but is not limited to, GaN, etc.

[0069] As an example, a gallium-containing epitaxial layer 23 may be formed on the surface of the substrate 21 by means of, but not limited to, physical vapor deposition, chemical vapor deposition, or atomic layer deposition processes.

[0070] In one embodiment, please refer to... Figure 3 S30: Forming a plurality of microdevices 22 on substrate 21 includes the following steps:

[0071] Step S31: Form an epitaxial layer 221 on the surface of the gallium-containing epitaxial layer 23 away from the substrate 21;

[0072] Step S32: A first electrode 222 and a second electrode 223 are formed on the surface of the epitaxial layer 221 away from the gallium-containing epitaxial layer 23.

[0073] As an example, there is a gap between the first electrode 222 and the second electrode 223; the material and shape of the first electrode 222 and the second electrode 223 are not limited, and the material of the electrodes may include, but is not limited to, alloy materials formed by one or any combination of Cr, Ti, Al, Ni, Pt, W, Pb, Rh, Sn, Cu and Ag. The first electrode 222 may be a P electrode and the second electrode 223 may be an N electrode; or the first electrode 222 may be an N electrode and the second electrode 223 may be a P electrode.

[0074] In one embodiment, such as Figure 4 As shown, in step S40, the microdevice 22 is flip-chip bonded to the adhesive layer 12. Utilizing the material properties of the adhesive layer 12, it is heated to embed the microdevice 22 entirely within the adhesive layer 12. Simultaneously, the gallium-containing epitaxial layer 23 is exposed outside the adhesive layer 12, facilitating subsequent removal of residual metal while controlling the morphology of the adhesive layer 12 to obtain a weakened structure with weaker adhesion compared to the adhesive layer 12. The light-emitting surface of the microdevice 22 is flush with the surface of the adhesive layer 12 away from the first transient substrate 11. The surface of the gallium-containing epitaxial layer 23 away from the substrate 21 is in contact with the light-emitting surface of the microdevice 22, and the surface of the gallium-containing epitaxial layer 23 away from the substrate 21 is in contact with the surface of the adhesive layer 12 away from the first transient substrate 11.

[0075] As an example, the heating temperature during the bonding process can be set according to actual needs. In this embodiment, the heating temperature may include 100℃-200℃; for example, the heating temperature of the bonding process may be 100℃, 110℃, 120℃, 130℃, 140℃, 150℃, 160℃, 170℃, 170℃, 180℃ or 200℃, etc.

[0076] In one embodiment, such as Figure 5 As shown, step S50: removing the substrate 21 to expose the light-emitting surface of the microdevice includes the following steps:

[0077] Step S51: Remove substrate 21 using laser lift-off process; wherein the laser energy is greater than the bandgap width of gallium-containing epitaxial layer 23 and less than the bandgap width of substrate 21.

[0078] For ease of understanding, in this embodiment, the material of the gallium-containing epitaxial layer 23 is GaN, and the substrate 21 is a sapphire substrate. The bandgap of the GaN epitaxial layer is 3.3 eV, and the bandgap of the sapphire substrate is 9.9 eV. The laser energy is adjusted to be between 3.3 eV and 9.9 eV. The ultraviolet laser source irradiates the microdevice 22 through the sapphire substrate, causing the GaN epitaxial layer in contact with the sapphire substrate to undergo a thermal decomposition reaction, generating metallic Ga and nitrogen gas N2, thereby achieving the separation of the microdevice 22 from the substrate 21. The residual metallic Ga remains on the light-emitting surface of the microdevice 22.

[0079] In one embodiment, the light-emitting surface is the contact surface between the microdevice 22 and the gallium-containing epitaxial layer 23; after removing the substrate 21, the light-emitting surface of the microdevice 22 has residual metal 231, which includes gallium.

[0080] In one embodiment, step S60: removing residual metal and etching the adhesive layer to form a weakened structure includes the following steps:

[0081] Step S61: During the removal of residual metal 231 using reactive ion etching, the adhesion layer 12 is etched to obtain the weakened structure 13 without any cleaning process. The weakened structure 13 has weaker adhesion than the adhesion layer 12, making it easier for the microdevice 22 to detach during transfer.

[0082] Specifically, utilizing the high anisotropy and selectivity of reactive ion etching (RIE), a high-energy reactive gas is introduced into the reaction chamber. Under a high-frequency electric field generated by an RF power supply, the gas dissociates into high-energy plasma, which reacts with the residual metal 231 to remove it. Simultaneously, the physical bombardment capability of the high-energy plasma is used to etch the adhesion layer 12. The morphology of the adhesion layer 12 is controlled by the anisotropy of RIE to form a weakened structure 13, thereby obtaining the semiconductor structure 100. Figure 6 As shown. The semiconductor structure 100 is obtained by the above preparation method, which removes the residual metal 231 and forms the weakened structure 13 in one step. It eliminates the need for debonding the adhesive layer, reduces the process difficulty of the weakened structure 13, and improves the light extraction efficiency of the microdevice 22.

[0083] In one embodiment, the high-energy reactive gas includes, but is not limited to, O2, Ar, N2, and SF6, etc.; the appropriate reactive gas can be selected according to the type of metal contained in the gallium-containing epitaxial layer 23, and this application does not limit it in this regard.

[0084] For ease of understanding, the reactant gas ionizes within the cavity, as shown in the following reaction:

[0085] SF6+e - →S x F + y +F - +e - nCF + 2+F - →CF - x →CF2↑;

[0086] Taking gallium as an example, the reaction of gallium with high-energy plasma is as follows:

[0087] Ga + +F - →GaF x ;

[0088] When the adhesive layer 12 is a pyrolytic adhesive layer and the material of the pyrolytic adhesive layer is hydroxide, the reaction of the adhesive layer 12 with high-energy plasma is as follows:

[0089] C + +F - →CO2↑.

[0090] In one embodiment, the shape of the weakening structure 13 includes, but is not limited to, a convex shape. The weakening structure 13 is located between the first transient substrate 11 and the microdevice 22, and fills the gap between the first electrode 222 and the second electrode 223. The projected area of ​​the microdevice 22 on the first transient substrate 11 is larger than the projected area of ​​the weakening structure 13 on the first transient substrate 11.

[0091] In one embodiment, the cross-sectional dimension of the weakening structure 13 is smaller than the cross-sectional dimension of the microdevice 22, where the cross-sectional dimension is the width. That is, the width of the weakening structure 13 is smaller than the width of the microdevice 22, reducing the contact area between the weakening structure and the microdevice. This allows the weakening structure to be directly detached from the microdevice during transfer without any additional processing, thus enabling microdevice transfer. The cross-sectional dimension of the weakening structure includes 10µm-15µm; the height of the weakening structure includes 5µm-10µm; for example, the cross-sectional dimensions of the weakening structure are 10µm, 11µm, 12µm, 13µm, 14µm, or 15µm, etc.; and the height of the weakening structure is 5µm, 6µm, 7µm, 8µm, 9µm, or 10µm, etc.

[0092] In one embodiment of this application, a semiconductor structure is also provided, which is obtained using the semiconductor structure fabrication method described above. Please continue to refer to... Figure 6The semiconductor structure 100 includes a first transient substrate 11, a weakening structure 13, and microdevices 22. Each microdevice 22 corresponds to one of the weakening structures 13, and the weakening structure 13 is located between the microdevice 22 and the first transient substrate 11. Multiple microdevices 22 are included, and gaps exist between the multiple microdevices 22.

[0093] In the aforementioned semiconductor structure, since the semiconductor structure is prepared using the above-mentioned method that has high light extraction efficiency of the light-emitting surface of the microdevice and low difficulty in transferring the microdevice to the back plate, the semiconductor structure also has high light extraction efficiency of the light-emitting surface of the microdevice and low difficulty in transferring the microdevice to the back plate.

[0094] In one embodiment of this application, such as Figure 7 As shown, a method for transferring microdevices is also provided, comprising the following steps:

[0095] Step S100: Prepare semiconductor structure 100 using the semiconductor structure preparation method described above, such as... Figure 6 As shown;

[0096] Step S200: Provide the transfer structure 31 and the drive backplane 32;

[0097] Step S300: Use transfer structure 31 to transfer microdevice 22 to the surface of drive backplane 32, as shown in Figures 8 and 9.

[0098] In the above-mentioned microdevice transfer method, the semiconductor structure is prepared by a semiconductor structure preparation method with high light extraction efficiency and simple preparation process. The microdevice is then transferred to the surface of the driving backplate by the provided transfer structure and driving backplate to complete the transfer of the microdevice. This improves the overall light emission brightness of the driving backplate after transfer and reduces the difficulty of microdevice transfer.

[0099] In one embodiment, the surface of the drive backplate 32 has contact electrodes 33, which correspond to the first electrode 222 and the second electrode 223. The number of contact electrodes 33 is greater than the sum of the number of the first electrode 222 and the second electrode 223. After selective pickup, at least a portion of the contact electrodes 33 are in contact with the first electrode 222 and the second electrode 223, as shown in Figures 8 and 9.

[0100] In one embodiment, step S300, transferring the microdevice 22 to the surface of the driving backplane 32 using the transfer structure 31, includes the following steps:

[0101] Step S301: Heat the first transient substrate 11, use the transfer structure 31 to pick up the microdevice 22, and remove the weakening structure 13 and the first transient substrate 11 at the same time.

[0102] Step S302: Transfer the picked-up microdevice 22 to the surface of the drive backplane 32.

[0103] As an example, the heating temperature of the first transient substrate 11 can be adaptively set according to the material of the transfer structure 31. In this embodiment, the heating temperature of the first transient substrate 11 may include 40°C-70°C, for example, the heating temperature may be 40°C, 50°C, 60°C, 65°C or 70°C, etc.

[0104] In one embodiment, the transfer structure 31 includes a second transient substrate 311 and a transfer member 312, the transfer member 312 being located on the surface of the second transient substrate 311; using the transfer structure 31 to transfer the microdevice 22 to the surface of the driving backplane 32 includes the following steps:

[0105] Step S310: Use the transfer member 31 to pick up the microdevice 22 and transfer the microdevice 22 to the surface of the drive backplane 32.

[0106] As an example, all microdevices 22 can be picked up, or only a portion of the microdevices 22 can be picked up; the material of the second transient substrate 311 may include, but is not limited to, a glass substrate, a sapphire substrate (Al2O3), or a quartz substrate. The material of the first transient substrate 11 and the second transient substrate 311 may be the same or different. The transfer member 312 may include, but is not limited to, a polydimethylsiloxane stamp (PDMS stamp), which can directly pick up the microdevices 22 on the first transient substrate 11 without heating due to its own adhesion.

[0107] As an example, Figure 7 The transfer component 312 can pick up all microdevices 22. After being graphically processed, the transfer component 312 in Figure 8 can pick up some microdevices 22. The specific shape of the transfer component 312 is related to the number of microdevices 22 picked up.

[0108] In one embodiment of this application, a display panel is also provided, including a driving backplate 32 and a plurality of microdevices 22 fixed on the driving backplate 32. The plurality of microdevices 22 are transferred to the surface of the driving backplate 32 using the microdevice transfer method described above.

[0109] As an example, the display panel may be an LED display panel or an LED backplane. The display device can also achieve the technical effects achievable by the aforementioned Micro LED chips, and will not be detailed here.

[0110] In the aforementioned display panel, multiple microdevices are transferred to the surface of the driving backplane using a microdevice transfer method that employs microdevices with high light extraction efficiency and simple fabrication process. This results in a display panel with high luminous brightness, reducing the manufacturing cost and cycle time of the display panel.

[0111] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A method of fabricating a semiconductor structure, characterized by, include: Provide a first transient substrate; An adhesive layer is coated on the surface of the first transient substrate; A substrate is provided on which a plurality of microdevices are formed; The microdevice is embedded within the adhesive layer; Remove the substrate to expose the light-emitting surface of the microdevice; After the substrate is removed, the light-emitting surface of the microdevice has residual metal. The adhesive layer is etched while removing the residual metal to form a weakened structure; The process of removing the residual metal while etching the adhesion layer to form a weakened structure includes: During the removal of the residual metal using reactive ion etching, the adhesion layer is etched to obtain the weakened structure.

2. The method of producing a semiconductor structure according to claim 1, wherein The cross-sectional dimension of the weakened structure is smaller than the cross-sectional dimension of the microdevice.

3. The method of producing a semiconductor structure according to claim 1, wherein The adhesive layer includes a pyrolytic adhesive layer.

4. The method of producing a semiconductor structure according to any one of claims 1 to 3, wherein Before forming a plurality of microdevices on the substrate, the method further includes: forming a gallium-containing epitaxial layer on the surface of the substrate; the formation of a plurality of microdevices on the substrate includes: An epitaxial layer is formed on the surface of the gallium-containing epitaxial layer away from the substrate; A first electrode and a second electrode are formed on the surface of the epitaxial layer that is away from the gallium-containing epitaxial layer; The residual metal includes gallium.

5. The method of producing a semiconductor structure according to claim 4, wherein The removal of the substrate to expose the light-emitting surface of the microdevice includes: The substrate is removed using a laser lift-off process; wherein the laser energy is greater than the bandgap width of the gallium-containing epitaxial layer and less than the bandgap width of the substrate.

6. A semiconductor structure, characterized by The semiconductor structure is prepared by the semiconductor structure preparation method as described in any one of claims 1 to 5.

7. A method of transferring a micro device, characterized by, include: The semiconductor structure is prepared using the semiconductor structure preparation method according to any one of claims 1-5; Provides transfer structure and drive backplane; The microdevice is transferred to the surface of the drive backplane using the transfer structure.

8. The method of claim 7, wherein the micro device is transferred by using a micro device transfer tool. The step of transferring the microdevice to the surface of the driving backplane using the transfer structure includes: The first transient substrate is heated, and the microdevice is picked up using the transfer structure. The picked-up microdevice is transferred to the surface of the drive backplane.

9. The method of claim 8, wherein the micro device is transferred by using a micro device transfer tool. The transfer structure includes a second transient substrate and a transfer member, wherein the transfer member is located on the surface of the second transient substrate; The step of transferring the microdevice to the surface of the driving backplane using the transfer structure includes: The transfer member is used to pick up the microdevice and transfer the microdevice to the surface of the drive backplane.

10. A display panel, characterized by, It includes a drive backplane and a plurality of microdevices fixed to the drive backplane, wherein the plurality of microdevices are transferred to the surface of the drive backplane using the microdevice transfer method as described in any one of claims 7-9.

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