Vertical cavity surface emitting laser and manufacturing method thereof

Abstract

The present invention discloses a vertical cavity surface emitting laser (VCSEL) and a method for manufacturing the same. The VCSEL comprises a first periodically stacked mirror structure; a p-type contact layer formed on the first periodically stacked mirror structure; a light-emitting layer formed on the p-type contact layer; a second periodically stacked mirror structure formed on the light-emitting layer; and an n-type contact layer formed on the second periodically stacked mirror structure. A first diffusion region is formed within the n-type contact layer and the second periodically stacked mirror structure, and the first diffusion region can limit carrier transmission within the n-type contact layer and the second periodically stacked mirror structure. The VCSEL of the present invention can utilize doping compensation to form a high-resistance region for current limiting in response to p-type diffusion doping in the n-type doped region, thereby achieving laser emission.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor optoelectronic technology, and in particular to a vertical cavity surface emitting laser and a manufacturing method thereof. Background Art

[0002] As a semiconductor laser, vertical cavity surface emitting laser (VCSEL) has the advantages of small size, low power consumption and easy integration. It is widely used in three-dimensional sensing, data centers and fiber optic communications. Currently, VCSEL chips are mainly based on GaAs and InP material systems. Among them, GaAs-based VCSEL can cover the wavelength range of 800-1000nm, and achieve current limitation and refractive index guidance by partially oxidizing the high-aluminum AlGaAs oxide layer to form oxide holes. Because the position and shape of the oxide holes have a significant impact on the threshold current and mode gain of the laser, a dedicated oxidation furnace is usually required for precise oxidation rate control and oxidation endpoint monitoring. The oxidation process is complex and difficult to control, with low yield and high cost.

[0003] The information disclosed in this background technology section is only intended to enhance understanding of the overall background of the invention and should not be regarded as an admission or any form of suggestion that the information constitutes the prior art already known to a person skilled in the art. Summary of the Invention

[0004] The object of the present invention is to provide a vertical cavity surface emitting laser and a manufacturing method thereof, which can form a high resistance region by using doping compensation to limit current for p-type diffusion doping in n-type doping regions and realize laser emission.

[0005] To achieve the above-mentioned objectives, an embodiment of the present invention provides a vertical cavity surface emitting laser, comprising: a first periodic stacked mirror structure; a p-type contact layer formed on the first periodic stacked mirror structure; a light-emitting layer formed on the p-type contact layer; a second periodic stacked mirror structure formed on the light-emitting layer; and an n-type contact layer formed on the second periodic stacked mirror structure; wherein a first diffusion region is formed in the n-type contact layer and the second periodic stacked mirror structure, and the first diffusion region can limit the transmission of carriers in the n-type contact layer and the second periodic stacked mirror structure.

[0006] In one or more embodiments of the present invention, a first electrode layer is formed on the p-type contact layer.

[0007] In one or more embodiments of the present invention, the n-type contact layer, the second periodically stacked mirror structure, and the light-emitting layer form a mesa structure, and the first electrode layer is formed on the p-type contact layer outside the mesa structure.

[0008] In one or more embodiments of the present invention, the first diffusion region is provided in a ring structure within the mesa structure, and a diameter or side length of a region at the center of the ring structure where no p-type diffusion is performed ranges from 5 to 30 μm.

[0009] In one or more embodiments of the present invention, a second p-type diffusion region is formed in the p-type contact layer and outside the mesa structure, and the first electrode layer is formed on the second p-type diffusion region to form an ohmic contact with the second p-type diffusion region.

[0010] In one or more embodiments of the present invention, the invention further includes a first passivation layer formed on the p-type contact layer, and the first electrode layer passes through the first passivation layer and contacts the second p-type diffusion region.

[0011] In one or more embodiments of the present invention, a first opening is formed on the first passivation layer, the first opening exposing the second p-type diffusion region of the p-type contact layer, and the first electrode layer is formed in the first opening.

[0012] In one or more embodiments of the present invention, a second electrode layer is formed on the n-type contact layer, and the second electrode layer is formed on a region of the n-type contact layer where the first diffusion region is not provided.

[0013] In one or more embodiments of the present invention, the device further includes a second passivation layer formed on the n-type contact layer, and the second electrode layer passes through the second passivation layer and contacts the n-type contact layer.

[0014] In one or more embodiments of the present invention, a second opening is formed on the second passivation layer, the second opening exposes a region of the n-type contact layer where the first diffusion region is not provided, and the second electrode layer is formed in the second opening.

[0015] In one or more embodiments of the present invention, a third passivation layer is formed on the side surfaces of the mesa structure.

[0016] In one or more embodiments of the present invention, the first periodic stacked mirror structure includes a non-doped semiconductor Bragg reflector layer, and the second periodic stacked mirror structure includes an n-type doped semiconductor Bragg reflector layer.

[0017] In one or more embodiments of the present invention, the doping concentration of the n-type doped semiconductor Bragg reflector layer is 1E18-3E18 cm -3 .

[0018] In one or more embodiments of the present invention, the doping concentration of the n-type contact layer is 3E18-1E19 cm -3.

[0019] In one or more embodiments of the present invention, the doping concentration of the p-type contact layer is 1E18-5E18 cm -3 .

[0020] In one or more embodiments of the present invention, the doping concentration of the first diffusion region is 3E18-1E19 cm -3 , the doping depth of the first diffusion region is less than the total thickness of the n-type contact layer and the second periodic stacked mirror structure.

[0021] In one or more embodiments of the present invention, the doping concentration of the second p-type diffusion region is 3E18-1E19 cm -3 .

[0022] In one or more embodiments of the present invention, the light-emitting layer includes a multi-quantum well layer located in the middle layer and light confinement layers located on both sides of the multi-quantum well layer.

[0023] The present invention also provides a method for manufacturing a vertical cavity surface emitting laser, comprising: providing a substrate; sequentially growing a buffer layer, a stop layer, a first periodic stacked mirror structure, a p-type contact layer, a light-emitting layer, a second periodic stacked mirror structure, and an n-type contact layer on the substrate; etching the n-type contact layer, the second periodic stacked mirror structure, and the light-emitting layer to form a mesa structure; selectively performing p-type diffusion on the n-type contact layer and the second periodic stacked mirror structure within the mesa structure to form a first diffusion region; forming a passivation layer on the mesa structure, and manufacturing a second electrode layer on the passivation layer.

[0024] In one or more embodiments of the present invention, selective p-type diffusion is performed on the n-type contact layer within the mesa structure and the second periodic stacked mirror structure to form a first diffusion region, and selective p-type diffusion is performed on the p-type contact layer outside the mesa structure to form a second p-type diffusion region. A passivation layer is formed on the p-type contact layer, and a first electrode layer is fabricated at a position on the passivation layer corresponding to the second p-type diffusion region.

[0025] In one or more embodiments of the present invention, the substrate, the buffer layer, and the stop layer are removed.

[0026] Compared with the prior art, the vertical cavity surface emitting laser of the embodiment of the present invention uses p-type diffusion doping in the n-type doping region and forms a high resistance region by doping compensation to limit current and realize laser emission.

[0027] The vertical cavity surface emitting laser of the embodiment of the present invention is a VCSEL epitaxial and device structure that does not require an oxidation process. The p-type diffusion therein can be completed in an MOCVD device without the need for dedicated oxidation equipment. The diffusion process is simple and easy to control.

[0028] The vertical cavity surface emitting laser of the embodiment of the present invention performs p-type diffusion doping compensation on the n-type doped area while performing p-type diffusion on the p-type contact layer. The characteristic that the diffusion element is easily enriched on the surface of the p-type contact layer can increase the p-type diffusion doping concentration on the surface of the p-type contact layer, making it easy to form a p-type ohmic contact with the subsequent electrode layer.

[0029] The method for manufacturing a vertical cavity surface emitting laser according to the embodiment of the present invention does not require special oxidation equipment, and the diffusion process is simple and easy to control. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a schematic diagram of a longitudinal cross-sectional structure of a vertical cavity surface emitting laser according to an embodiment of the present invention;

[0031] Figure 2 is a flow chart of a method for manufacturing a vertical cavity surface emitting laser according to one embodiment of the present invention;

[0032] Figure 3a-3g It is a schematic diagram of the steps of a method for manufacturing a vertical cavity surface emitting laser according to one embodiment of the present invention. DETAILED DESCRIPTION

[0033] The specific embodiments of the present invention are described in detail below with reference to the accompanying drawings, but it should be understood that the protection scope of the present invention is not limited by the specific embodiments.

[0034] Unless expressly stated otherwise, throughout the specification and claims, the term "comprise" or variations such as "include" or "comprising", etc., will be understood to include the stated elements or components but not to exclude other elements or other components.

[0035] like Figure 1 As shown, one embodiment of the present invention provides a vertical cavity surface emitting laser, comprising a first periodic stacked mirror structure 10, a p-type contact layer 20 formed on the first periodic stacked mirror structure 10, a light-emitting layer 30 formed on the p-type contact layer 20, a second periodic stacked mirror structure 40 formed on the light-emitting layer 30, and an n-type contact layer 50 formed on the second periodic stacked mirror structure 40. A first diffusion region 61 is formed in the n-type contact layer 50 and the second periodic stacked mirror structure 40. The first diffusion region 61 can limit the transmission of carriers in the n-type contact layer 50 and the second periodic stacked mirror structure 40.

[0036] The first periodic stacked mirror structure 10 and the second periodic stacked mirror structure 40 are layered structures composed of two optical dielectric materials with different refractive indices, each periodically alternating. They exhibit high reflectivity for light within the operating wavelength range. Light propagates from the light-emitting layer 30 to the first periodic stacked mirror structure 10 and the second periodic stacked mirror structure 40. Light generated by the light-emitting layer 30, after multiple reciprocating oscillations between the first periodic stacked mirror structure 10 and the second periodic stacked mirror structure 40, forms a laser beam that is emitted from the first periodic stacked mirror structure 40.

[0037] In this embodiment, the first periodic stacked mirror structure 10 includes a non-doped semiconductor Bragg reflector layer. For example, the non-doped semiconductor Bragg reflector layer may include 20 periods of non-doped 70nm-Al 0.9 Ga 0.1 As / 60nm-Al 0.12 Ga 0.88 The second periodic stacked mirror structure 40 includes an n-type doped semiconductor Bragg reflector layer, wherein the doping concentration of the n-type doped semiconductor Bragg reflector layer is 1E18-3E18 cm -3 For example, the n-type doped semiconductor Bragg reflector layer includes 30 periods of 70 nm-Al doped with Si. 0.9 Ga 0.1 As / 60nm-Al 0.12 Ga 0.88 As, where Si doping concentration is 2E18cm -3 However, the present invention is not limited thereto, and in other embodiments of the present invention, the first periodic stacked mirror structure 10 or the second periodic stacked mirror structure 40 may also be made of other semiconductor optical materials, which are also within the scope of protection of the present invention.

[0038] The p-type contact layer 20 is a p-type doped electrical contact layer, wherein the doping concentration of the p-type contact layer 20 is 1E18-5E18 cm -3 A second p-type diffusion region 62 is formed in the p-type contact layer 20. The second p-type diffusion region 62 forms a ring structure in the p-type contact layer 20. The p-type diffusion doping concentration of the second p-type diffusion region 62 is 3E18-1E19 cm -3 For example, the material of the p-type contact layer 20 may include 125nm-Al 0.3 Ga 0.7 As, where the p-type C doping concentration can be 3E18cm -3 The second p-type diffusion region 62 may be a p-type Zn diffusion region with a diffusion concentration of 5E18 cm -3 .

[0039] A first passivation layer 71 is formed on the upper surface of the p-type contact layer 20 (away from the surface of the first periodically stacked mirror structure 10). A first opening 711 is formed in the first passivation layer 71, exposing the second p-type diffusion region 62 of the p-type contact layer 20. A first electrode layer 81 is formed within the first opening 711. The first electrode layer 81 passes through the first passivation layer 71 and contacts the second p-type diffusion region 62, forming an ohmic contact.

[0040] The light-emitting layer 30, the second periodically stacked mirror structure 40, and the n-type contact layer 50 are etched to form a mesa structure. The first passivation layer 71, the first electrode layer 81, and the second p-type diffusion region 62 are all formed outside the mesa structure. For example, the diameter of the mesa structure can be 100 μm.

[0041] The light emitting layer 30 includes a multi-quantum well layer 31 in the middle layer and light confinement layers 32 on both sides of the multi-quantum well layer 31. For example, the multi-quantum well layer 31 includes an undoped 3-period 6nm-GaAs / 8nm-Al 0.3 Ga 0.7 As, the light confinement layer 32 includes 108nm-Al 0.3 Ga 0.7 As.

[0042] The second periodic stacked mirror structure 40 and the n-type contact layer 50 are sequentially disposed on the light emitting layer 30, wherein the doping concentration of the n-type contact layer 50 is 3E18-1E19 cm -3 A first diffusion region 61 is formed in the n-type contact layer 50 and the second periodic stacked mirror structure 40. The first diffusion region 61 is arranged in a ring structure in the mesa structure, and the diameter or side length of the area at the center of the ring structure where the p-type diffusion is not performed ranges from 5 to 30 μm. For example, the material of the n-type contact layer 50 includes 60nm-GaAs, in which the n-type Te doping concentration can be 5E18cm -3 The doping concentration of the first diffusion region 61 in the n-type contact layer 50 is 3E18-1E19 cm -3 The doping depth of the first diffusion region 61 is less than the total thickness of the n-type contact layer 50 and the second periodic stacked mirror structure 40. Preferably, the optimal diffusion doping concentration of the first diffusion region 61 is: after the p-type diffusion doping is performed in the n-type contact layer 50 and the second periodic stacked mirror structure 40, the sheet resistance of the second periodic stacked mirror structure 40 increases to 5000Ωcm -2 Specifically, an n-type second periodic stacked mirror structure 40 with the same structure and doping as above can be regrown on a semi-insulating substrate and p-type diffusion calibration can be performed to obtain the optimal diffusion doping concentration and doping depth.

[0043] A second electrode layer 82 is formed on the n-type contact layer 50 . The second electrode layer 82 is formed on a region of the n-type contact layer 50 where the first diffusion region 61 is not provided.

[0044] Illustratively, a second passivation layer 72 is formed on the upper surface of the n-type contact layer 50 (away from the surface of the second periodically stacked mirror structure 40). A second opening 721 is formed in the second passivation layer 72. The second opening 721 exposes an area of ​​the n-type contact layer 50 where the first diffusion region 61 is not provided. A second electrode layer 82 is formed within the second opening 721. The second electrode layer 82 passes through the second passivation layer 72 and contacts the n-type contact layer 50.

[0045] A third passivation layer 73 is formed on the side of the mesa structure, and two sides of the third passivation layer 73 are respectively connected to the first passivation layer 71 and the second passivation layer 72 .

[0046] Exemplarily, the first passivation layer 71, the second passivation layer 72 and the third passivation layer 73 are made of SiO2. The first electrode layer 81 is made of one or more of Ti, Pt and Au, and the second electrode layer 82 is made of one or more of AuGe, Ni and Au.

[0047] refer to Figure 2 As shown, the present invention also provides a method for manufacturing a vertical cavity surface emitting laser, comprising:

[0048] S1, providing a substrate 100;

[0049] S2, sequentially growing a buffer layer 101, a stop layer 102, a first periodic stacked mirror structure 10, a p-type contact layer 20, a light-emitting layer 30, a second periodic stacked mirror structure 40 and an n-type contact layer 50 on the substrate 100;

[0050] S3, etching the n-type contact layer 50, the second periodic stacked mirror structure 40 and the light-emitting layer 30 to form a mesa structure;

[0051] S4, selectively performing p-type diffusion on the n-type contact layer 50 within the mesa structure and the second periodic stacked mirror structure 40 to form a first diffusion region 61. Simultaneously, selectively performing p-type diffusion on the p-type contact layer 20 outside the mesa structure to form a second p-type diffusion region 62.

[0052] S5 , forming a passivation layer 70 on the mesa structure and the surface of the p-type contact layer 20 , and fabricating an electrode layer on the passivation layer 70 .

[0053] S6 , removing the liner 100 , the buffer layer 101 and the stop layer 102 .

[0054] Figure 3a-3gThe following is a schematic diagram of the steps of the method for manufacturing a vertical cavity surface emitting laser in one embodiment of the present invention. The method for manufacturing a vertical cavity surface emitting laser of the present invention is described in detail below with reference to the schematic diagram of the steps of the method for manufacturing a vertical cavity surface emitting laser.

[0055] like Figure 3a As shown, a substrate 100 is provided, and a buffer layer 101, an etching stop layer 102, a first periodic stacked mirror structure 10, a p-type contact layer 20, a light-emitting layer 30, a second periodic stacked mirror structure 40 and an n-type contact layer 50 are sequentially grown on the substrate 100 using MOCVD.

[0056] The buffer layer 101, the etching stop layer 102 and the first periodic stacked mirror structure 10 are all non-doped layer structures. The first periodic stacked mirror structure 10 is a non-doped semiconductor Bragg reflector layer. The p-type contact layer 20 is a p-type doped electrical contact layer with a doping concentration of 1E18 to 5E18 cm -3 The light emitting layer 30 includes a multi-quantum well layer 31 in the middle layer and light confinement layers 32 on both sides of the multi-quantum well layer 31. The second periodic stacked mirror structure 40 is an n-type doped semiconductor Bragg reflector layer with a doping concentration of 1E18 to 3E18 cm -3 The n-type contact layer 50 is an n-type doped electrical contact layer, and the doping concentration of the n-type contact layer is 3E18~1E19cm -3 .

[0057] like Figure 3b As shown, the n-type contact layer 50, the second periodic stacked mirror structure 40 and the light-emitting layer 30 are etched on the above epitaxial structure to form a columnar mesa structure.

[0058] like Figure 3c As shown, p-type diffusion doping is performed on the p-type contact layer 20 located outside the mesa structure, and on the n-type contact layer 50 and the second periodic stacked mirror structure 40 located inside the mesa structure, thereby forming a second p-type diffusion region 62 in the p-type contact layer 20 outside the mesa structure, and forming a first diffusion region 61 in the n-type contact layer 50 and the second periodic stacked mirror structure 40.

[0059] The doping concentration of the second p-type diffusion region 62 is 3E18-1E19 cm -3 The doping concentration of the first diffusion region 61 is 3E18~1E19cm -3 , and its optimal diffusion doping concentration is p-type diffusion doping, the square resistance of the second periodic stacked mirror structure 40 and the n-type contact layer 50 increases to 5000Ωcm -2As described above, the depth of the first diffusion region 61 formed by p-type diffusion doping is less than the combined thickness of the n-type contact layer 50 and the second periodically stacked mirror structure 40. The first diffusion region 61 is arranged in a ring-shaped structure within the mesa structure. The diameter or side length of the area at the center of the ring structure, where p-type diffusion is not performed, ranges from 5 to 30 μm.

[0060] like Figure 3d As shown, a non-conductive surface passivation layer 70 is deposited on the mesa structure and the surface of the p-type contact layer 20. The passivation layer 70 includes a first passivation layer 71 formed on the p-type contact layer 20, a second passivation layer 72 formed on the n-type contact layer 50, and a third passivation layer 73 formed on the side of the mesa structure.

[0061] like Figure 3e and 3f As shown, a first opening 711 is formed on the first passivation layer 71 corresponding to the second p-type diffusion region 62 of the p-type contact layer 20, and metal is deposited in the first opening 711 to form a first electrode layer 81; a second opening 721 is formed on the second passivation layer 72 corresponding to the non-doped diffusion region of the n-type contact layer 50, and metal is deposited in the second opening 721 to form a second electrode layer 82.

[0062] like Figure 3g As shown, the substrate 100, the buffer layer 101 and the etching stop layer 102 are removed by thinning, polishing and etching.

[0063] The vertical cavity surface emitting laser and its manufacturing method of the present invention are described below through a specific embodiment.

[0064] First, MOCVD was used to epitaxially grow the following: a 500nm non-doped GaAs buffer layer, a 30nm non-doped GaAs layer, and a 1.5nm non-doped GaAs layer. 0.49 In 0.51 P etching stop layer, 20 cycles of non-doped 70nm-Al 0.9 Ga 0.1 As / 60nm-Al 0.12 Ga 0.88 As DBR, 125nm-Al 0.3 Ga 0.7 As and p-type C doping concentration 3E18cm -3 p-type contact layer, undoped 3-period 6nm-GaAs / 8nm-Al 0.3 Ga 0.7 As quantum well layer and 108nm-Al on the upper and lower sides of the quantum well layer 0.3 Ga 0.7 As optical confinement layer, 30-period 70nm-Al 0.9 Ga 0.1As / 60nm-Al 0.12 Ga 0.88 As n-type DBR with Si doping concentration 2E18cm -3 The n-type 60nm-GaAs contact layer contains Te doping concentration of 5E18cm -3 .

[0065] Next, a cylindrical mesa structure is etched on the epitaxial wafer. The mesa structure has a diameter of 100 μm and the bottom edge of the mesa structure is located on the p-type contact layer.

[0066] Next, the n-type doped region (30 cycles of 70nm-Al 0.9 Ga 0.1 As / 60nm-Al 0.12 Ga 0.88 As n-type DBR with Si doping concentration 2E18cm -3 The n-type 60nm-GaAs contact layer contains Te doping concentration of 5E18cm -3 ) and the p-type contact layer (125nm-Al 0.3 Ga 0.7 As and p-type C doping concentration 3E18cm -3 The p-type contact layer) is selectively doped with p-type Zn, and the doping diffusion concentration is 5E18cm -3 The central undiffused area of ​​the mesa structure has a diameter of 20 μm.

[0067] A 100nm SiO2 layer was deposited on the entire device surface as a surface passivation layer. Holes were opened in the passivation layer and metal was deposited in the second p-type diffusion region of the p-type contact layer and the non-p-type diffusion doped region of the n-type doped region. Ti / Pt / Au and AuGe / Ni / Au multilayer metals were used to make the p-electrode and n-electrode, respectively.

[0068] Finally, the substrate, buffer layer and etching stop layer are removed by thinning, polishing and etching.

[0069] Compared with the prior art, the vertical cavity surface emitting laser of the embodiment of the present invention uses p-type diffusion doping in the n-type doping region and forms a high resistance region by doping compensation to limit current and realize laser emission.

[0070] The vertical cavity surface emitting laser of the embodiment of the present invention is a VCSEL epitaxial and device structure that does not require an oxidation process. The p-type diffusion therein can be completed in an MOCVD device without the need for dedicated oxidation equipment. The diffusion process is simple and easy to control.

[0071] The vertical cavity surface emitting laser of the embodiment of the present invention performs p-type diffusion doping compensation on the n-type doped area while performing p-type diffusion on the p-type contact layer. The characteristic that the diffusion element is easily enriched on the surface of the p-type contact layer can increase the p-type diffusion doping concentration on the surface of the p-type contact layer, making it easy to form a p-type ohmic contact with the subsequent electrode layer.

[0072] The method for manufacturing a vertical cavity surface emitting laser according to the embodiment of the present invention does not require special oxidation equipment, and the diffusion process is simple and easy to control.

[0073] The various aspects, embodiments, features and examples of the present invention should be considered as illustrative in all respects and are not intended to limit the present invention, the scope of which is defined solely by the claims. Other embodiments, modifications and uses will be apparent to those skilled in the art without departing from the spirit and scope of the invention as claimed.

[0074] The use of headings and sections in this application is not meant to limit the invention; each section may apply to any aspect, embodiment, or feature of the invention.

[0075] Throughout this application, where a composition is described as having, containing, or comprising particular components, or where a process is described as having, containing, or comprising particular process steps, it is contemplated that the compositions taught by the present invention also consist essentially of, or consist of, the recited components, and that the processes taught by the present invention also consist essentially of, or consist of, the recited process steps.

[0076] In this application, where an element or component is referred to as being included in and / or selected from a list of recited elements or components, it should be understood that the element or component may be any one of the recited elements or components and may be selected from a group consisting of two or more of the recited elements or components. Furthermore, it should be understood that the elements and / or features of the compositions, apparatuses, or methods described herein may be combined in various ways, whether explicitly or implicitly stated herein, without departing from the spirit and scope of the present teachings.

[0077] Unless specifically stated otherwise, the use of the terms "including", "having" and "comprising" should generally be construed as open ended and non-limiting.

[0078] Unless specifically stated otherwise, the use of the singular herein includes the plural (and vice versa). Furthermore, unless the context clearly dictates otherwise, the singular forms "a," "an," and "the" include the plural. Additionally, where the term "about" is used before a quantitative value, the present teachings also include the specific quantitative value itself unless specifically stated otherwise.

[0079] Should be understood that, the order of each step or the order in which specific action is performed is not very important, as long as the present invention teachings remain operable.In addition, two or more steps or actions can be performed simultaneously.

[0080] It should be understood that the figures and descriptions of the present invention have been simplified to illustrate elements relevant to a clear understanding of the present invention, while other elements have been eliminated for clarity. However, those skilled in the art will recognize that these and other elements may be desirable. However, since such elements are well known in the art and since they do not promote a better understanding of the present invention, a discussion of such elements is not provided herein. It should be understood that the figures are presented for illustrative purposes and are not intended to be construction diagrams. Omitted details and modifications or alternative embodiments are within the scope of those skilled in the art.

[0081] It will be appreciated that in certain aspects of the present invention, a single component may be replaced by multiple components and multiple components may be replaced by a single component to provide an element or structure or to perform one or more given functions. Except where such substitution would not operate to practice a specific embodiment of the present invention, such substitution is considered within the scope of the present invention.

[0082] Although the present invention has been described with reference to illustrative embodiments, it will be understood by those skilled in the art that various other changes, omissions, and / or additions may be made and that substantial equivalents may be substituted for the elements of the embodiments without departing from the spirit and scope of the present invention. Additionally, many modifications may be made to adapt specific circumstances or materials to the teachings of the present invention without departing from the scope of the present invention. Therefore, it is not intended herein to limit the present invention to the disclosed specific embodiments for carrying out the present invention, but rather to include all embodiments within the scope of the appended claims. Furthermore, unless specifically stated, any use of the terms first, second, etc. does not indicate any order or importance, but rather uses the terms first, second, etc. to distinguish one element from another.

Claims

1. A vertical cavity surface emitting laser, characterized in that: include: a first periodic stacked mirror structure; A p-type contact layer formed on the first periodic stacked mirror structure; a light-emitting layer formed on the p-type contact layer; A second periodic stacked mirror structure is formed on the light-emitting layer; and An n-type contact layer is formed on the second periodic stacked mirror structure; Among them, a first diffusion region of p-type diffused doping compensation is formed in the n-type contact layer and the second periodic stacked mirror structure. The first diffusion region can limit the transmission of carriers in the n-type contact layer and the second periodic stacked mirror structure, and current is limited by forming a high-resistance region through doping compensation.

2. The vertical cavity surface emitting laser according to claim 1, wherein A first electrode layer is formed on the p-type contact layer.

3. The vertical cavity surface emitting laser according to claim 2, wherein: A mesa structure is formed by the n-type contact layer, the second periodically stacked mirror structure, and the light-emitting layer. The first electrode layer is formed on the p-type contact layer outside the mesa structure.

4. The vertical cavity surface emitting laser according to claim 3, wherein: The first diffusion region is arranged in a ring structure within the mesa structure, and the diameter or side length of the region at the center of the ring structure where the p-type diffusion is not performed ranges from 5 to 30 μm.

5. The vertical cavity surface emitting laser according to claim 4, wherein: A second p-type diffusion region is formed in the p-type contact layer and outside the mesa structure. The first electrode layer is formed on the second p-type diffusion region and forms an ohmic contact with the second p-type diffusion region.

6. The vertical cavity surface emitting laser according to claim 5, wherein: The system further includes a first passivation layer formed on the p-type contact layer, wherein the first electrode layer passes through the first passivation layer and contacts the second p-type diffusion region.

7. The vertical cavity surface emitting laser according to claim 6, wherein: A first opening is formed on the first passivation layer, the first opening exposing the second p-type diffusion region of the p-type contact layer, and the first electrode layer is formed in the first opening.

8. The vertical cavity surface emitting laser according to claim 1, wherein: A second electrode layer is formed on the n-type contact layer, and the second electrode layer is formed on a region of the n-type contact layer where the first diffusion region is not provided.

9. The vertical cavity surface emitting laser according to claim 8, wherein: The system further includes a second passivation layer formed on the n-type contact layer, wherein the second electrode layer passes through the second passivation layer and contacts the n-type contact layer.

10. The vertical cavity surface emitting laser according to claim 9, wherein: A second opening is formed on the second passivation layer, the second opening exposing a region of the n-type contact layer where the first diffusion region is not provided, and the second electrode layer is formed in the second opening.

11. The vertical cavity surface emitting laser according to claim 3, wherein: A third passivation layer is formed on side surfaces of the mesa structure.

12. The vertical cavity surface emitting laser according to claim 1, wherein: The first periodic stacked mirror structure includes a non-doped semiconductor Bragg reflector layer, and the second periodic stacked mirror structure includes an n-type doped semiconductor Bragg reflector layer.

13. The vertical cavity surface emitting laser according to claim 12, wherein: The doping concentration of the n-type doped semiconductor Bragg reflector layer is 1E18 to 3E18 cm -3 .

14. The vertical cavity surface emitting laser according to claim 5, wherein: The doping concentration of the n-type contact layer is 3E18-1E19 cm -3 and / or The doping concentration of the p-type contact layer is 1E18-5E18cm -3 and / or The doping concentration of the first diffusion region and the second p-type diffusion region is 3E18-1E19 cm -3 , the doping depth of the first diffusion region is less than the total thickness of the n-type contact layer and the second periodic stacked mirror structure.

15. The vertical cavity surface emitting laser according to claim 1, wherein: The light emitting layer includes a multi-quantum well layer located in the middle layer and light confinement layers located on both sides of the multi-quantum well layer.

16. A method for manufacturing a vertical cavity surface emitting laser, characterized in that: include: providing a substrate; A buffer layer, a stop layer, a first periodic stacked mirror structure, a p-type contact layer, a light-emitting layer, a second periodic stacked mirror structure, and an n-type contact layer are sequentially grown on the substrate; Etching the n-type contact layer, the second periodic stacked mirror structure, and the light-emitting layer to form a mesa structure; Selectively performing p-type diffusion from the top surface of the mesa structure to the n-type contact layer within the mesa structure and the second periodic stacked mirror structure to form a first diffusion region compensated by p-type diffusion doping, and forming a high-resistance region by utilizing doping compensation to limit current; A passivation layer is formed on the mesa structure, and a second electrode layer is fabricated on the passivation layer.

17. The method for manufacturing a vertical cavity surface emitting laser according to claim 16, wherein: The n-type contact layer within the mesa structure and the second periodic stacked mirror structure are selectively p-type diffused to form a first diffusion region. At the same time, the p-type contact layer outside the mesa structure is selectively p-type diffused to form a second p-type diffusion region. A first electrode layer is fabricated on the second p-type diffusion region.

18. The method for manufacturing a vertical cavity surface emitting laser according to claim 16, wherein: The substrate, buffer layer, and stop layer are removed.

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