A three-phase high-power rectifier with MOS tube full-bridge rectification

Abstract

The present invention discloses a three-phase high-power rectifier with MOS transistor full-bridge rectification, relating to the technical field of voltage regulators. The present invention comprises a three-phase full-bridge MOS transistor rectifier circuit, an upper half-bridge MOS transistor control circuit, a reference voltage sampling circuit, an adjustment voltage sampling circuit, and a lower half-bridge MOS transistor control circuit. The three-phase full-bridge MOS transistor rectifier circuit is electrically connected to the upper half-bridge MOS transistor control circuit, the lower half-bridge MOS transistor control circuit, the reference voltage sampling circuit, and the adjustment voltage sampling circuit, respectively. The upper half-bridge MOS transistor control circuit is electrically connected to the lower half-bridge MOS transistor sampling circuit, the reference voltage sampling circuit, and the adjustment voltage sampling circuit, respectively. The lower half-bridge MOS transistor control circuit is electrically connected to the reference voltage sampling circuit and the adjustment voltage sampling circuit, respectively. The present invention improves the output efficiency of the voltage regulator to 99%, reduces the ambient temperature requirement of the voltage regulator, and eliminates the need for a separate heat sink. Under the same power conditions, the manufacturing cost is lower than that of a traditional half-bridge MOS transistor voltage regulator.

Description

Technical Field

[0001] The invention belongs to the technical field of voltage regulators, and in particular relates to a three-phase high-power rectifier with MOS tube full-bridge rectification. Background Art

[0002] Traditional integrated circuit MOS tube voltage regulators use MOS tubes in the lower half of the full-bridge rectifier and Schottky diodes in the upper half. This voltage regulator has the following disadvantages:

[0003] 1. The output efficiency of traditional voltage regulator is not high (taking 800W voltage regulator as an example, its output efficiency is 95%).

[0004] 2. Traditional voltage regulators need to be used at lower ambient temperatures and require ventilation for heat dissipation;

[0005] 3. The manufacturing cost is higher under the same power conditions. Summary of the Invention

[0006] The purpose of the present invention is to provide a three-phase high-power rectifier with MOS tube full-bridge rectification to solve the existing problems.

[0007] To solve the above technical problems, the present invention is achieved through the following technical solutions:

[0008] The present invention provides a three-phase high-power rectifier with MOS tube full-bridge rectification, comprising a three-phase full-bridge MOS tube rectification circuit, an upper half-bridge MOS tube control circuit, a reference voltage sampling circuit, an adjustment voltage sampling circuit, and a lower half-bridge MOS tube control circuit. The lower half-bridge MOS tube control circuit comprises a voltage regulating chip IC2, which is a 14-pin chip. The three-phase full-bridge MOS tube rectification circuit is electrically connected to the upper half-bridge MOS tube control circuit, the lower half-bridge MOS tube control circuit, the reference voltage sampling circuit, and the adjustment voltage sampling circuit, respectively. The upper half-bridge MOS tube control circuit is electrically connected to the lower half-bridge MOS tube sampling circuit, the reference voltage sampling circuit, and the adjustment voltage sampling circuit, respectively. The lower half-bridge MOS tube control circuit is electrically connected to the reference voltage sampling circuit and the adjustment voltage sampling circuit, respectively.

[0009] The three-phase full-bridge MOS tube rectifier circuit includes a plurality of MOS tubes, which are electrically connected to the upper half-bridge MOS tube control circuit, the reference voltage sampling circuit, the adjustment voltage sampling circuit, and the lower half-bridge MOS tube control circuit respectively, and rectify the three-phase electricity and supply it to other circuits;

[0010] An upper half-bridge MOS transistor control circuit includes four groups of comparator integrated circuits and an upper half-bridge MOS transistor drive control circuit; the four groups of comparator integrated circuits are electrically connected to the upper half-bridge MOS transistor drive control circuit;

[0011] The reference voltage sampling circuit is electrically connected to the upper half-bridge MOS transistor control circuit and the lower half-bridge MOS transistor control circuit respectively. Its function is to provide a reference voltage for the upper half-bridge MOS transistor control circuit and the voltage regulator chip IC2, and is controlled by the voltage regulator chip IC2.

[0012] The adjustment voltage sampling circuit is electrically connected to the upper half-bridge MOS transistor control circuit and the lower half-bridge MOS transistor control circuit respectively. Its function is to provide an adjustment voltage for the upper half-bridge MOS transistor control circuit, provide an overvoltage detection voltage for the voltage regulator chip IC2, and accept voltage adjustments from the voltage regulator chip IC2.

[0013] Furthermore, the three-phase full-bridge MOS transistor rectifier circuit includes a MOS transistor Q1, a MOS transistor Q2, a MOS transistor Q3, a MOS transistor Q26, a MOS transistor Q27, and a MOS transistor Q28. The drains of the MOS transistors Q26, Q27, and Q28 are respectively connected to the Y1, Y2, and Y3 poles of the three-phase power supply. The sources of the MOS transistors Q1, Q2, and Q3 are respectively electrically connected to the drains of the MOS transistors Q26, Q27, and Q28. The gates of the MOS transistors Q26, Q27, and Q28 are all electrically connected to the lower half-bridge MOS transistor control circuit. The drains of the MOS transistors Q1, Q2, and Q3 are connected to the DC output voltage terminal V+, and the gates of the MOS transistors Q1, Q2, and Q3 are all electrically connected to the upper half-bridge MOS transistor control circuit.

[0014] Furthermore, the four groups of comparator integrated circuits of the upper half-bridge MOS tube control circuit include four groups of comparators, namely comparator IC1A, comparator IC1B, comparator IC1C, and comparator IC1D;

[0015] The structures of the three comparator integrated circuits including comparator IC1A, comparator IC1B, and comparator IC1C are the same. The comparator integrated circuit including comparator IC1A also includes resistor R3, resistor R6, resistor R10, resistor R14, resistor R18, resistor R22, low-pass diode D2, diode D5, capacitor C3, transistor Q5, transistor Q9, transistor Q13, transistor Q17, transistor Q18, and transistor Q24, and the series resistors R18 and resistor R22 are connected to the output of comparator IC1D, the output of comparator IC1A is connected between resistors R18 and R22, the base of transistor Q18 is connected between resistors R18 and R22, the emitter of transistor Q18 is connected to the emitter and base of transistor Q24, the collector of transistor Q24 is connected to pin 9 of voltage regulator chip IC2, the collector of transistor Q18 is connected to the base of transistor Q9 through resistor R14, and the emitter of transistor Q9 is connected to the MOSFET. The base of transistor Q9 is connected to transistor Q9 through resistor R10, and the collector of transistor Q9 is connected to the collector of transistor Q5 through resistor R6 and resistor R3 in sequence. The base of transistor Q5 is connected between resistor R3 and resistor R6. The base of transistor Q5 is connected to the collector of transistor Q5 through diode D5, and a low-pass diode D2 is connected between the collector and emitter of transistor Q5. Capacitor C3 is connected between the emitter of transistor Q9 and the collector of transistor Q5. The collector of transistor Q5 is connected to transistor The emitter of Q13, the emitter and base of transistor Q13 are connected, and are also connected to the collector of transistor Q17. The collector of transistor Q13 is connected to the VCC power supply pin through resistor R1. The emitter and base of transistor Q17 are connected to each other and to the reference voltage sampling circuit. The collector of transistor Q5 is connected to the Y2 pole of the three-phase power supply. The non-inverting input terminal of comparator IC1A is connected to the Y2 pole of the three-phase power supply through resistor R24. The inverting input terminal of comparator IC1A is connected to the DC output voltage terminal V+.

[0016] The comparator integrated circuit including the comparator IC1B is connected to the Y1 pole of the three-phase power, and the comparator integrated circuit including the comparator IC1C is connected to the Y3 pole of the three-phase power.

[0017] Furthermore, the lower half-bridge MOS transistor control circuit also includes resistors R33, R35, R36, R37, R38, R39, R40, R42, and R44. The Y1 pole of the three-phase power is connected to pin 5 of the voltage regulating chip IC2 through resistor R33, the Y2 pole is connected to pin 6 of the voltage regulating chip IC2 through resistor R35, and the Y3 pole is connected to pin 7 of the voltage regulating chip IC2 through resistor R36. The Y1 pole is grounded through resistor R37, the Y2 pole is grounded through resistor R38, and the Y3 pole is grounded through resistor R39. Pin 8 of the voltage regulating chip IC2 is connected to the gate of the MOS transistor Q26 through resistor R40, pin 9 is connected to the gate of the MOS transistor Q27 through resistor R42, and pin 10 is connected to the gate of the MOS transistor Q28 through resistor R44.

[0018] The reference voltage sampling circuit includes transistor Q7, transistor Q14, transistor Q20, resistor R16, resistor R17, resistor R26, and resistor R31; the emitter and base of transistor Q7 are connected to the DC output voltage terminal V+, the collector of transistor Q7 is connected to the emitter of transistor Q14 through resistor R17, the base of transistor Q14 is connected to pin 12 of voltage regulator chip IC2 through resistor R16, and pin 13 of voltage regulator chip IC2 is connected to the DC output voltage terminal V+. Between resistor R26 and resistor R31, the collector of transistor Q14 is connected to the emitter of transistor Q20 through resistor R17, the emitter of transistor Q20 is connected to the base, the collector of transistor Q20 is connected to the non-inverting input terminal of comparator IC1D through resistor R26 and resistor R31, and the non-inverting input terminal of IC1D is connected to pin 3 of voltage regulator chip IC2, and the output terminal of comparator IC1D is connected between resistor R26 and resistor R31 through resistor R27.

[0019] Furthermore, the adjustment voltage sampling circuit includes a transistor Q22, a resistor R28, a resistor R30, a resistor R32, a resistor R34, a resistor R41, a resistor R43, a capacitor C7, a capacitor C8 and a capacitor C9; the base and emitter of the transistor Q22 are connected, the emitter of the transistor Q22 is connected to the DC output voltage terminal V+, the collector of the transistor Q22 is connected to ground through the resistors R28, R30, R32, R41 and R43 in sequence, pin 1 of the voltage regulating chip IC2 is connected between the resistors R32 and R41, the inverting input terminal of the comparator is connected between the resistors R30 and R32, the capacitor C8 is connected to both ends of the resistors R41 and R43, the pin 2 of the voltage regulating chip IC2 is connected between the resistors R28 and R30 through the resistor R32, the capacitor C9 is connected between the resistor R34 and the ground, and the capacitor C7 is connected between the DC output voltage terminal V+ and the ground.

[0020] The present invention has the following beneficial effects:

[0021] The present invention improves the output efficiency of the voltage regulator by up to 99% through the mutual cooperation of a three-phase full-bridge MOS tube rectifier circuit, an upper half-bridge MOS tube control circuit, a lower half-bridge MOS tube control circuit, a reference voltage sampling circuit, and an adjustment voltage sampling circuit. The voltage regulator has lower requirements on the ambient temperature and does not require an additional heat dissipation device. Under the same heat dissipation conditions, the heating temperature of the voltage regulator housing is lower than that of the conventional state. Under the same power conditions, the manufacturing cost is lower than that of a conventional half-bridge MOS tube voltage regulator.

[0022] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0024] Figure 1 This is a system block diagram of a three-phase high-power rectifier with MOS tube full-bridge rectification according to the present invention;

[0025] Figure 2 This is a circuit diagram of a three-phase high-power rectifier with MOS tube full-bridge rectification according to the present invention. DETAILED DESCRIPTION

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0027] See also Figure 1-Figure 2 As shown, the present invention is a three-phase high-power rectifier with MOS tube full-bridge rectification, including a three-phase full-bridge MOS tube rectification circuit, an upper half-bridge MOS tube control circuit, a reference voltage sampling circuit, an adjustment voltage sampling circuit, and a lower half-bridge MOS tube control circuit. The three-phase full-bridge MOS tube rectification circuit is electrically connected to the upper half-bridge MOS tube control circuit, the lower half-bridge MOS tube control circuit, the reference voltage sampling circuit, and the adjustment voltage sampling circuit respectively; the upper half-bridge MOS tube control circuit is electrically connected to the lower half-bridge MOS tube sampling circuit, the reference voltage sampling circuit, and the adjustment voltage sampling circuit respectively; and the lower half-bridge MOS tube control circuit is electrically connected to the reference voltage sampling circuit and the adjustment voltage sampling circuit respectively.

[0028] The three-phase full-bridge MOS tube rectifier circuit includes a plurality of MOS tubes, which are electrically connected to the upper half-bridge MOS tube control circuit, the reference voltage sampling circuit, the adjustment voltage sampling circuit, and the lower half-bridge MOS tube control circuit, and supply the three-phase electricity to other circuits after rectification; the plurality of MOS tubes include MOS tube Q1, MOS tube Q2, MOS tube Q3, MOS tube Q26, MOS tube Q27, and MOS tube Q28, and the drains of MOS tube Q26, MOS tube Q27, and MOS tube Q28 are connected to the Y1 and Y2 electrodes of the three-phase electricity, respectively. On the Y1 and Y2 electrodes, the sources of the MOS transistors Q1, Q2, and Q3 are electrically connected to the drains of the MOS transistors Q26, Q27, and Q28, respectively; the gates of the MOS transistors Q26, Q27, and Q28 are electrically connected to the lower-half-bridge MOS transistor control circuit; the drains of the MOS transistors Q1, Q2, and Q3 are connected to the DC output voltage terminal V+, and the gates of the MOS transistors Q1, Q2, and Q3 are electrically connected to the upper-half-bridge MOS transistor control circuit.

[0029] The upper half-bridge MOS transistor control circuit includes four comparator integrated circuits and an upper half-bridge MOS transistor drive control circuit; the four comparator integrated circuits are electrically connected to the upper half-bridge MOS transistor drive control circuit; the four comparator integrated circuits include four comparators, namely comparator IC1A, comparator IC1B, comparator IC1C, and comparator IC1D;

[0030] The structures of the three comparator integrated circuits, including comparator IC1A, comparator IC1B, and comparator IC1C, are identical.

[0031] Taking the comparator integrated circuit including comparator IC1A as an example, in addition to comparator IC1A, the integrated circuit also includes resistor R3, resistor R6, resistor R10, resistor R14, resistor R18, resistor R22, low-pass diode D2, diode D5, capacitor C3, transistor Q5, transistor Q9, transistor Q13, transistor Q17, transistor Q18 and transistor Q24. The series resistor R18 and resistor R22 are connected to the comparator IC1D. At the output end, the output end of the comparator IC1A is connected between the resistor R18 and the resistor R22, the base of the transistor Q18 is connected between the resistor R18 and the resistor R22, the emitter of the transistor Q18 is connected to the emitter and base of the transistor Q24, the collector of the transistor Q24 is connected to the 9 pin of the voltage regulator chip IC2, the collector of the transistor Q18 is connected to the base of the transistor Q9 through the resistor R14, and the emitter of the transistor Q9 is connected to the transistor Q9 through the resistor R10. The base of transistor Q5 is connected to the collector of transistor Q5 through resistor R6 and resistor R3 in sequence. The base of transistor Q5 is connected between resistor R3 and resistor R6. The base of transistor Q5 is connected to the collector of transistor Q5 through diode D5, and a low-pass diode D2 is connected between the collector and emitter of transistor Q5. Capacitor C3 is connected between the emitter of transistor Q9 and the collector of transistor Q5. The collector of transistor Q5 is connected to the emitter of transistor Q13. The emitter and base of transistor Q13 are connected, and are also connected to the collector of transistor Q17. The collector of transistor Q13 is connected to the VCC power supply pin through resistor R1. The emitter and base of transistor Q17 are connected to each other and to the reference voltage sampling circuit. The collector of transistor Q5 is connected to the Y2 pole of the three-phase power supply. The non-inverting input terminal of comparator IC1A is connected to the Y2 pole of the three-phase power supply through resistor R24. The inverting input terminal of comparator IC1A is connected to the DC output voltage terminal V+.

[0032] The comparator integrated circuit including the comparator IC1B is connected to the Y1 pole of the three-phase power, and the comparator integrated circuit including the comparator IC1C is connected to the Y3 pole of the three-phase power.

[0033] The lower half-bridge MOS transistor control circuit includes a voltage regulator chip IC2, which is a 14-pin chip. The lower half-bridge MOS transistor control circuit also includes resistors R33, R35, R36, R37, R38, R39, R40, R42, and R44. The Y1 pole of the three-phase power is connected to pin 5 of the voltage regulator chip IC2 through resistor R33, the Y2 pole is connected to pin 6 of the voltage regulator chip IC2 through resistor R35, and the Y3 pole is connected to pin 7 of the voltage regulator chip IC2 through resistor R36. The Y1 pole is grounded through resistor R37, the Y2 pole is grounded through resistor R38, and the Y3 pole is grounded through resistor R39. Pin 8 of the voltage regulator chip IC2 is connected to the gate of the MOS transistor Q26 through resistor R40, pin 9 is connected to the gate of the MOS transistor Q27 through resistor R42, and pin 10 is connected to the gate of the MOS transistor Q28 through resistor R44.

[0034] The reference voltage sampling circuit is electrically connected to the upper half-bridge MOS transistor control circuit and the lower half-bridge MOS transistor control circuit respectively. Its function is to provide a reference voltage for the upper half-bridge MOS transistor control circuit and the voltage regulator chip IC2, and is controlled by the voltage regulator chip IC2.

[0035] The reference voltage sampling circuit includes transistor Q7, transistor Q14, transistor Q20, resistor R16, resistor R17, resistor R26, and resistor R31; the emitter and base of transistor Q7 are connected to the DC output voltage terminal V+, the collector of transistor Q7 is connected to the emitter of transistor Q14 through resistor R17, the base of transistor Q14 is connected to pin 12 of the voltage regulator chip IC2 through resistor R16, and pin 13 of the voltage regulator chip IC2 is connected to resistor R16. Between R26 and resistor R31, the collector of transistor Q14 is connected to the emitter of transistor Q20 through resistor R17. The emitter and base of transistor Q20 are connected. The collector of transistor Q20 is connected to the non-inverting input of comparator IC1D through resistor R26 and resistor R31. The non-inverting input of IC1D is connected to pin 3 of voltage regulator chip IC2. The output of comparator IC1D is connected between resistor R26 and resistor R31 through resistor R27.

[0036] The adjustment voltage sampling circuit is electrically connected to the upper half-bridge MOS transistor control circuit and the lower half-bridge MOS transistor control circuit respectively. Its function is to provide an adjustment voltage for the upper half-bridge MOS transistor control circuit, provide an overvoltage detection voltage for the voltage regulator chip IC2, and receive voltage adjustments from the voltage regulator chip IC2.

[0037] The adjustment voltage sampling circuit includes a transistor Q22, a resistor R28, a resistor R30, a resistor R32, a resistor R34, a resistor R41, a resistor R43, a capacitor C7, a capacitor C8, and a capacitor C9; the base and emitter of the transistor Q22 are connected, the emitter of the transistor Q22 is connected to the DC output voltage terminal V+, the collector of the transistor Q22 is connected to ground through the resistors R28, R30, R32, R41, and R43 in sequence, pin 1 of the voltage regulator chip IC2 is connected between the resistors R32 and R41, the inverting input terminal of the comparator is connected between the resistors R30 and R32, capacitor C8 is connected across the resistors R41 and R43, pin 2 of the voltage regulator chip IC2 is connected between the resistors R28 and R30 through the resistor R32, capacitor C9 is connected between the resistor R34 and ground, and capacitor C7 is connected between the DC output voltage terminal V+ and ground.

[0038] Working principle:

[0039] See also Figure 2 As shown, for ease of understanding, the voltage regulator chip IC2 is preferably the voltage regulator disclosed in publication number CN103268132. After the rectifier of the present invention is connected to a 12V battery, the VCC power supply pin is powered by the reference voltage sampling circuit and the upper half-bridge MOS tube control circuit, and the 13th pin of the voltage regulator chip IC2 is powered by the reference voltage sampling circuit; the three-phase AC power Y1, Y2, and Y3 are rectified by the three-phase full-bridge MOS tube rectifier circuit and then charged to the 12V battery;

[0040] The non-inverting input terminal of comparator IC1D is the reference voltage terminal, which is 5.5V. 5.5V is also the reference voltage of voltage regulator chip IC2. When the battery charging voltage is lower than the set voltage (14.7V), the phase difference of the pulse control signal 8 pin, 9 pin, and 10 pin output by comparator IC2 is 120°, so the transistor Q18, transistor Q19, transistor Q21 and MOS transistor Q26, MOS transistor Q27, and MOS transistor Q28 are turned on with a phase difference of 120°. When the voltage of the inverting input terminal of comparator IC1D is lower than 5.5V, the comparator IC1D outputs a control signal to make the transistors Q18, Q19, and Q21 turn on with a phase difference of 120°. The collectors and emitters of transistors Q8, Q9, and Q10 are turned on with a phase difference of 120°. The voltage flows from the bases of transistors Q15, Q16, and Q17 to the collectors, and then from the emitters of transistors Q8, Q9, and Q10 to the collectors. The voltage passes through resistors R5, R6, and R7 and diodes D4, D5, and D6 to the gates of MOS transistors Q1, Q2, and Q3, respectively. This causes the sources and drains of the MOS transistors to turn on with a phase difference of 120°. The three-phase full-bridge MOS transistor rectifier circuit then rectifies the output voltage to charge the 12V battery.

[0041] When the battery charging voltage is higher than the set voltage (14.7V), pins 8, 9, and 10 of voltage regulator IC2 simultaneously output control signals, keeping MOS transistors Q26, Q27, and Q28 conducting. The voltage at the inverting input of comparator IC1D exceeds 5.5V, causing no output from comparator IC1D. The gates of MOS transistors Q1, Q2, and Q3 lose control signals, leaving their sources and drains open. The three-phase full-bridge MOS transistor rectifier circuit then produces no output voltage to charge the 12V battery.

[0042] Comparators IC1A, IC1B, and IC1C are used for voltage monitoring. When the three-phase line voltage is higher than the voltage of the DC output voltage terminal V+, the output control signal controls the upper half-bridge MOS tube to turn on. Otherwise, the three comparators have no output, and the drain and source of the MOS tube are not turned on.

[0043] The present invention improves the output efficiency of the voltage regulator by up to 99% (taking an 800W voltage regulator as an example) through the mutual cooperation of a three-phase full-bridge MOS tube rectifier circuit, an upper half-bridge MOS tube control circuit, a lower half-bridge MOS tube control circuit, a reference voltage sampling circuit, and an adjustment voltage sampling circuit. The voltage regulator has lower requirements for ambient temperature and does not require an additional heat sink. Under the same power conditions, the manufacturing cost is lower than that of a traditional half-bridge MOS tube voltage regulator.

[0044] Throughout this specification, references to terms such as "one embodiment," "example," or "specific example" indicate that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of the present invention. In this specification, schematic representations of these terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0045] The preferred embodiments of the present invention disclosed above are intended only to help illustrate the present invention. These preferred embodiments do not exhaustively describe all details, nor do they limit the present invention to the specific embodiments described. Obviously, many modifications and variations are possible based on the content of this specification. These embodiments are selected and described in detail in this specification to better explain the principles and practical applications of the present invention, thereby enabling those skilled in the art to better understand and utilize the present invention. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A three-phase high-power rectifier with MOS tube full-bridge rectification, comprising a three-phase full-bridge MOS tube rectification circuit, an upper half-bridge MOS tube control circuit, a reference voltage sampling circuit, an adjustment voltage sampling circuit, and a lower half-bridge MOS tube control circuit. The lower half-bridge MOS tube control circuit includes a voltage regulator chip IC2, which is a 14-pin chip. The following features are present: The three-phase full-bridge MOS tube rectifier circuit is electrically connected to the upper half-bridge MOS tube control circuit, the lower half-bridge MOS tube control circuit, the reference voltage sampling circuit, and the adjustment voltage sampling circuit respectively; the upper half-bridge MOS tube control circuit is electrically connected to the lower half-bridge MOS tube sampling circuit, the reference voltage sampling circuit, and the adjustment voltage sampling circuit respectively; the lower half-bridge MOS tube control circuit is electrically connected to the reference voltage sampling circuit and the adjustment voltage sampling circuit respectively; The three-phase full-bridge MOS tube rectifier circuit includes a plurality of MOS tubes, which are electrically connected to the upper half-bridge MOS tube control circuit, the reference voltage sampling circuit, the adjustment voltage sampling circuit, and the lower half-bridge MOS tube control circuit respectively, and rectify the three-phase electricity and supply it to other circuits; An upper half-bridge MOS transistor control circuit includes four groups of comparator integrated circuits and an upper half-bridge MOS transistor drive control circuit; the four groups of comparator integrated circuits are electrically connected to the upper half-bridge MOS transistor drive control circuit; The reference voltage sampling circuit is electrically connected to the upper half-bridge MOS transistor control circuit and the lower half-bridge MOS transistor control circuit respectively. Its function is to provide a reference voltage for the upper half-bridge MOS transistor control circuit and the voltage regulator chip IC2, and is controlled by the voltage regulator chip IC2. The adjustment voltage sampling circuit is electrically connected to the upper half-bridge MOS transistor control circuit and the lower half-bridge MOS transistor control circuit respectively. Its function is to provide an adjustment voltage for the upper half-bridge MOS transistor control circuit, provide an overvoltage detection voltage for the voltage regulator chip IC2, and accept voltage adjustments from the voltage regulator chip IC2.

2. The three-phase high-power rectifier with MOS tube full-bridge rectification according to claim 1, characterized in that: The three-phase full-bridge MOS transistor rectifier circuit includes MOS transistors Q1, Q2, Q3, Q26, Q27, and Q28. The drains of MOS transistors Q26, Q27, and Q28 are respectively connected to the Y1, Y2, and Y3 poles of the three-phase power supply. The sources of MOS transistors Q1, Q2, and Q3 are respectively electrically connected to the drains of MOS transistors Q26, Q27, and Q28. The gates of MOS transistors Q26, Q27, and Q28 are all electrically connected to the lower half-bridge MOS transistor control circuit. The drains of MOS transistors Q1, Q2, and Q3 are connected to the DC output voltage terminal V+, and the gates of MOS transistors Q1, Q2, and Q3 are all electrically connected to the upper half-bridge MOS transistor control circuit.

3. The three-phase high-power rectifier with MOS tube full-bridge rectification according to claim 2, characterized in that: The four comparator integrated circuits of the upper half-bridge MOS tube control circuit include four comparators, namely comparator IC1A, comparator IC1B, comparator IC1C, and comparator IC1D; The structures of the three comparator integrated circuits including comparator IC1A, comparator IC1B, and comparator IC1C are the same. The comparator integrated circuit including comparator IC1A also includes resistor R3, resistor R6, resistor R10, resistor R14, resistor R18, resistor R22, low-pass diode D2, diode D5, capacitor C3, transistor Q5, transistor Q9, transistor Q13, transistor Q17, transistor Q18, and transistor Q24, and the series resistors R18 and resistor R22 are connected to the output of comparator IC1D, the output of comparator IC1A is connected between resistors R18 and R22, the base of transistor Q18 is connected between resistors R18 and R22, the emitter of transistor Q18 is connected to the emitter and base of transistor Q24, the collector of transistor Q24 is connected to pin 9 of voltage regulator chip IC2, the collector of transistor Q18 is connected to the base of transistor Q9 through resistor R14, and the emitter of transistor Q9 is connected to the MOSFET. The base of transistor Q9 is connected to transistor Q9 through resistor R10, and the collector of transistor Q9 is connected to the collector of transistor Q5 through resistor R6 and resistor R3 in sequence. The base of transistor Q5 is connected between resistor R3 and resistor R6. The base of transistor Q5 is connected to the collector of transistor Q5 through diode D5, and a low-pass diode D2 is connected between the collector and emitter of transistor Q5. Capacitor C3 is connected between the emitter of transistor Q9 and the collector of transistor Q5. The collector of transistor Q5 is connected to transistor The emitter of Q13, the emitter and base of transistor Q13 are connected, and are also connected to the collector of transistor Q17. The collector of transistor Q13 is connected to the VCC power supply pin through resistor R1. The emitter and base of transistor Q17 are connected to each other and to the reference voltage sampling circuit. The collector of transistor Q5 is connected to the Y2 pole of the three-phase power supply. The non-inverting input terminal of comparator IC1A is connected to the Y2 pole of the three-phase power supply through resistor R24. The inverting input terminal of comparator IC1A is connected to the DC output voltage terminal V+. The comparator integrated circuit including the comparator IC1B is connected to the Y1 pole of the three-phase power, and the comparator integrated circuit including the comparator IC1C is connected to the Y3 pole of the three-phase power.

4. A three-phase high-power rectifier with MOS transistor full-bridge rectification according to claim 3, wherein the lower half-bridge MOS transistor control circuit further comprises resistors R33, R35, R36, R37, R38, R39, R40, R42, and R44; the Y1 pole of the three-phase power is connected to pin 5 of the voltage regulating chip IC2 through resistor R33; the Y2 pole is connected to pin 6 of the voltage regulating chip IC2 through resistor R35; the Y3 pole is connected to pin 7 of the voltage regulating chip IC2 through resistor R36; the Y1 pole is grounded through resistor R37; the Y2 pole is grounded through resistor R38; and the Y3 pole is grounded through resistor R39; the 8 pin of the voltage regulating chip IC2 is connected to the gate of the MOS transistor Q26 through resistor R40; the 9 pin is connected to the gate of the MOS transistor Q27 through resistor R42; and the 10 pin is connected to the gate of the MOS transistor Q28 through resistor R44; and the invention is characterized in that: The reference voltage sampling circuit includes transistor Q7, transistor Q14, transistor Q20, resistor R16, resistor R17, resistor R26, and resistor R31; the emitter and base of transistor Q7 are connected to the DC output voltage terminal V+, the collector of transistor Q7 is connected to the emitter of transistor Q14 through resistor R17, the base of transistor Q14 is connected to pin 12 of voltage regulator chip IC2 through resistor R16, and pin 13 of voltage regulator chip IC2 is connected to the DC output voltage terminal V+. Between resistor R26 and resistor R31, the collector of transistor Q14 is connected to the emitter of transistor Q20 through resistor R17, the emitter of transistor Q20 is connected to the base, the collector of transistor Q20 is connected to the non-inverting input terminal of comparator IC1D through resistor R26 and resistor R31, and the non-inverting input terminal of IC1D is connected to pin 3 of voltage regulator chip IC2, and the output terminal of comparator IC1D is connected between resistor R26 and resistor R31 through resistor R27.

5. The three-phase high-power rectifier with MOS tube full-bridge rectification according to claim 4, characterized in that: The adjustment voltage sampling circuit includes a transistor Q22, a resistor R28, a resistor R30, a resistor R32, a resistor R34, a resistor R41, a resistor R43, a capacitor C7, a capacitor C8 and a capacitor C9; the base and emitter of the transistor Q22 are connected, the emitter of the transistor Q22 is connected to the DC output voltage terminal V+, the collector of the transistor Q22 is connected to ground through the resistors R28, R30, R32, R41 and R43 in sequence, pin 1 of the voltage regulating chip IC2 is connected between the resistors R32 and R41, the inverting input terminal of the comparator is connected between the resistors R30 and R32, the capacitor C8 is connected to both ends of the resistors R41 and R43, the pin 2 of the voltage regulating chip IC2 is connected between the resistors R28 and R30 through the resistor R32, the capacitor C9 is connected between the resistor R34 and ground, and the capacitor C7 is connected between the DC output voltage terminal V+ and ground.

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