A sputtering power supply control system and a control method

Abstract

The present invention discloses a sputtering power supply control system and control method, relating to the field of power supply technology, and is intended to address the impact of arcing discharge on power supply output. The present invention provides a sputtering power supply control system comprising a single-chip microcomputer, a first comparator, a totem pole drive circuit, two parallel silicon carbide switching tubes, a second comparator, a current sampling resistor, and a second high-speed optocoupler. The single-chip microcomputer outputs a 3.3V PWM pulse signal. When the positive electrode of the first comparator receives a high level, the first comparator converts the 3.3V pulse into a 12V pulse output. The gate is connected to the output of the totem pole drive circuit. The drain is connected to a capacitive load. The positive input of the second comparator is connected to the source of the silicon carbide switching tube. The current sampling resistor is connected to the source of the silicon carbide switching tube. The input of the second high-speed optocoupler is connected to the output of the second comparator, and the output of the second high-speed optocoupler is connected to the single-chip microcomputer. The present invention is used in a coating machine.

Description

Technical Field

[0001] The present invention relates to the technical field of power supply systems, and in particular to a sputtering power supply control system and a control method. Background Art

[0002] Magnetron sputtering coating machines use sputtering to produce metals, alloys, compounds, semiconductors, ceramics, dielectric composite films, and other chemical reaction films. Magnetron sputtering coating machines are suitable for coating a variety of single-layer films, multi-layer films, doped films, and alloy films; they can coat both magnetic and non-magnetic materials.

[0003] Magnetron sputtering is a type of physical vapor deposition (PVD). Sputtering is a PVD technique that uses high-energy plasma generated by a glow discharge or ion beam in a vacuum environment to impact a target material. This impaction dislodges atoms from the target material through momentum transfer, depositing them onto the substrate to form a thin film.

[0004] The high-energy pulse sputtering power supply used for sputtering has an impact on the power supply output when arc discharge occurs at the output pole of the pulse power supply during the sputtering process. Summary of the Invention

[0005] Embodiments of the present invention provide a sputtering power supply control system and a control method, which can solve the impact of arc discharge on power supply output when an output electrode of a pulse power supply during a sputtering process occurs.

[0006] To achieve the above objectives, the embodiments of the present invention adopt the following technical solutions:

[0007] On the one hand, an embodiment of the present invention provides a sputtering power supply control system, comprising a single-chip microcomputer, a first comparator, a totem pole drive circuit, two parallel silicon carbide switching tubes, a second comparator, a current sampling resistor, and a second high-speed optocoupler. The single-chip microcomputer outputs a 3.3V PWM pulse signal. The positive input terminal of the first comparator is connected to the output terminal of the single-chip microcomputer. When the positive terminal of the first comparator receives a low level, it outputs a low level and stops the pulse output. When the positive terminal of the first comparator receives a high level, the first comparator converts the 3.3V pulse into a 12V pulse output. The totem pole drive circuit is connected to the output terminal of the first comparator. The gates of the two parallel silicon carbide switching tubes are connected to the output terminal of the totem pole drive circuit. The drains of the two parallel silicon carbide switching tubes are connected to a capacitive load. The two parallel silicon carbide switching tubes are configured to connect when receiving a high level and disconnect when receiving a low level. The positive input terminal of the second comparator is connected to the source of the silicon carbide switching tube. The second comparator is used to output a low level when the positive input terminal receives a low level, and is also used to convert the output to a 12V level when the positive input terminal receives a high level. The current sampling resistor is connected to the source of the silicon carbide switching tube and is used to output a high level to the positive input terminal of the second comparator during discharge, and is also used to output a low level to the positive input terminal of the second comparator when not discharging. The second high-speed optocoupler input terminal is connected to the output terminal of the second comparator, and the output terminal of the second high-speed optocoupler is connected to the microcontroller. The second high-speed optocoupler is used to output a low level when receiving a low level, and is also used to output a high level of 3.3V when receiving a high level of 12V. The microcontroller is used to stop the output of several PWM pulse signals when receiving the high level of 3.3V output by the second high-speed optocoupler.

[0008] The present invention provides a sputtering power supply control system, which uses a single-chip microcomputer, a first comparator, a totem pole drive circuit, two parallel silicon carbide switching tubes, a second comparator, a current sampling resistor and a second high-speed optocoupler to achieve the effect that the single-chip microcomputer controls to stop outputting several pulse signals when the current sampling resistor detects discharge, thereby achieving the effect that no interference is generated on the power supply during discharge. Among them, the first comparator and the second comparator can achieve level flip output when receiving a high level. The current sampling resistor can collect the current when glow discharge occurs during the sputtering process. When discharging, the current passing through the current sampling resistor increases instantaneously, so that the current entering the second comparator at this time is a high level. The second high-speed optocoupler plays an isolation role, and the silicon carbide switching tube realizes the switching role. The totem pole drive circuit improves the current driving capability.

[0009] Furthermore, the sputtering power supply control system also includes a first diode, a second diode, and a third diode. The input end of the second high-speed optocoupler includes the second high-speed optocoupler positive electrode and the second high-speed optocoupler negative electrode. The second high-speed optocoupler positive electrode is connected to a 12V voltage, the second high-speed optocoupler negative electrode is connected to the output end of the second comparator, and the second high-speed optocoupler negative electrode is also connected in series with the first diode; the first diode positive electrode is also connected to the second diode and then connected to the first comparator negative electrode; the first comparator negative electrode is also connected to the third diode, and the third diode positive electrode is connected to a 5V voltage.

[0010] Furthermore, the sputtering power supply control system further includes a first high-speed optocoupler, wherein the input end of the first high-speed optocoupler is connected to the output end of the single-chip microcomputer, the output end of the first high-speed optocoupler is connected to a 5V voltage, and the 5V voltage at the output end of the first high-speed optocoupler is divided by a resistor so that the positive input end of the first comparator inputs a 3.3V pulse when the voltage level is high.

[0011] Furthermore, the first comparator and the second comparator belong to two chips respectively.

[0012] On the other hand, the present invention further provides a control method for a sputtering power supply control system, including the sputtering power supply control system mentioned in the above technical solution, the control method comprising the following steps:

[0013] Set the capacitive load voltage on the microcontroller to 200-1000V, and set the number of PWM pulse signals that stop outputting 3.3V when the microcontroller receives a high level of 3.3V.

[0014] When the current sampling resistor does not detect discharge:

[0015] The single-chip microcomputer outputs a 3.3V PWM pulse signal, which is output to the first comparator at a low level when the signal is low, and to the first comparator at a high level when the signal is high. The first comparator converts the signal to output a 12V high level when the signal is high, and outputs a low level when the signal is low. The totem pole drive circuit connected to the output end of the first comparator turns on the silicon carbide switch tube when the signal is high, and the capacitive load receives a voltage of 200 to 1000V. The totem pole drive circuit is also used to turn off the silicon carbide switch tube when the signal is low, and the capacitive load receives a voltage of 0V.

[0016] When the current sampling resistor detects discharge:

[0017] The positive input terminal of the second comparator obtains a high voltage, the output terminal of the second comparator outputs a 12V voltage, and the second high-speed optocoupler outputs a 3.3V high level to the microcontroller to control the stop of several PWM pulse signals; the input voltage of the positive input terminal of the first comparator is less than the voltage obtained at the negative input terminal of the first comparator, and the first comparator always outputs a low level, so that the totem pole drive circuit drives the silicon carbide switch tube to disconnect, thereby stopping the pulse output. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic diagram of a sputtering power supply control system of the present invention;

[0019] Figure 2 A schematic diagram of a sputtering power supply signal processing and power driving system according to the present invention;

[0020] Figure 3 This is a schematic diagram of a sputtering power supply operation security control system of the present invention;

[0021] Figure 4 The present invention discloses a comparator unit used in a sputtering power supply control system. DETAILED DESCRIPTION

[0022] The embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0023] In the description of the present invention, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention.

[0024] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the technical features being referred to. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0025] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood broadly. For example, they may refer to fixed, detachable, or integral connections; they may refer to electrical connections; they may refer to direct connections or indirect connections through an intermediary; and they may refer to internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0026] The present invention provides a sputtering power supply control system, such as Figure 1 As shown, the sputtering power supply control system may include a single chip microcomputer 1, a first comparator U2A, a totem pole drive circuit 3, two parallel silicon carbide switch tubes 4, a second comparator U1A, a current sampling resistor R11 and a second high-speed optocoupler 6. Figure 2As shown, the main control board receives a 3.3V DC supply and, through microcontroller 1, can output a 3.3V PWM pulse signal (PWM, Pulse Width Modulation: a periodic high and low level wave with variable frequency and duty cycle). The positive input of the first comparator U2A is connected to the output of microcontroller 1. When the positive terminal of the first comparator U2A receives a low level (in digital circuits, voltage is represented by logic levels. Logic levels include high and low. Different components form digital circuits with different voltage corresponding logic levels), the output is low and the pulse output is stopped. When the positive terminal of the first comparator U2A receives a high level of 3.3V, the first comparator U2A converts the 3.3V pulse into a 12V pulse output. The totem pole drive circuit 3 is connected to the output of the first comparator U2A. The gates of the two parallel silicon carbide switching tubes 4 are connected to the output end of the totem pole drive circuit 3, and the drains of the two parallel silicon carbide switching tubes 4 are connected to the capacitive load 5. The two parallel silicon carbide switching tubes 4 are used to be connected when receiving a high level 12V, and are also used to be disconnected when receiving a low level 0V.

[0027] In addition, combined Figure 2 and Figure 3 As shown, Figure 2 The 00b end and Figure 3 The 00b end is connected to Figure 2 The circuit in belongs to the strong current area. Figure 3 The circuit in the figure is a weak point. The positive input of the second comparator U1A is connected to the source of the silicon carbide switching tube 4. The second comparator U1A is used to output a low level when the positive input receives a low level, and is also used to convert the output to a 12V level when the positive input receives a high level. The current sampling resistor R1 is used to detect whether the device is discharging. During discharge, the current in the current sampling resistor R1 increases instantaneously. The current sampling resistor R11 is connected to the source of the silicon carbide switching tube and is used to output a high level to the positive input of the second comparator U1A during discharge. It is also used to output a low level to the positive input of the second comparator U1A, which is approximately equal to 0V, when not discharging. The input of the second high-speed optocoupler 6 is connected to the output of the second comparator U1A. The output of the second high-speed optocoupler 6 is connected to the microcontroller 1. The second high-speed optocoupler 6 is used to output a low level of 0V when receiving a low level when not discharging, and is also used to output a high level of 3.3V when receiving a high level of 12V during discharge.

[0028] in, Figure 3 The 00c end and Figure 2 The 00c end is connected to the 00c end in this way, so that the single chip computer 1 is used to stop outputting several PWM pulse signals when receiving the high level 3.3V output by the second high-speed optical coupler 6.

[0029] In this case, the present invention provides a sputtering power supply control system, which uses a single-chip microcomputer 1, a first comparator U2A, a totem pole drive circuit 3, two parallel silicon carbide switching tubes 4, a second comparator U1A, a current sampling resistor R11, and a second high-speed optocoupler 6 to achieve the control of the single-chip microcomputer 1 to stop outputting several pulse signals when the current sampling resistor R11 detects discharge. This application can be illustrated by stopping 3 to 5 pulses, but this application is not limited to this. Among them, the first comparator U2A and the second comparator U1A can achieve level flipping output when receiving a high level. The current sampling resistor R11 can collect the current when glow discharge occurs during the sputtering process. When discharging, the current passing through the current sampling resistor R11 increases instantly, and the current entering the second comparator U1A at this time is a high level. The second high-speed optocoupler 6 acts as an isolation device. If a low-speed optocoupler is used, it will interfere with signal transmission. The use of a high-speed optocoupler can enable faster signal transmission. The silicon carbide switching tube 4 performs the switching function. The totem pole drive circuit 3 improves the current driving capability.

[0030] Specifically, the following example illustrates that when not discharging, the negative input terminal of the first comparator U2A is connected to a 1.7V voltage, which is formed by dividing a 5V voltage through resistors R4 and R5. The voltage at the positive input terminal of the first comparator U2A, 3.3V, is approximately twice the 1.7V voltage. When the pulse at the positive input terminal of the first comparator U2A is a low-level 0V pulse, it is lower than the 1.7V at the negative input terminal. In this case, the first comparator U2A outputs a low-level 0V output. When the pulse at the positive input terminal of the first comparator U2A is a high-level 3.3V pulse, that is, when the positive input terminal of the first comparator U2A is 3.3V, it is higher than the 1.7V at the negative input terminal. The 3.3V pulse is converted to a high-level 12V output. The first comparator U2A performs voltage level conversion. When the first comparator U2A outputs a high-level pulse, the 3.3V pulse is converted to a 12V pulse, which then enters the totem pole drive circuit 3. The totem pole driving circuit 3 is connected to the output terminal of the first comparator U2A and is used to improve the current driving capability and quickly complete the charging or discharging process of the gate charge.

[0031] In the non-discharging state, the totem pole driving circuit 3 (at this time, the first comparator U2A realizes 3.3V to 12V level conversion, and the first comparator U2A outputs a 12V pulse), the two parallel silicon carbide switching tubes 4 (the two silicon carbide switching tubes 4 share the current so that the silicon carbide switching tube 4 will not be overheated and damaged) are connected to the output end of the totem pole driving circuit 3, and the silicon carbide switching tube 4 is also connected to the capacitive load 5. When the high level 12V is received by the silicon carbide switching tube 4, the silicon carbide switching tube 4 is driven to be connected, so that the capacitive load 5 connected to the silicon carbide switching tube 4 is loaded with a 200~1000V medium frequency pulse (this application uses a 200~1000V medium frequency pulse as an example for explanation, without limitation). When the low level 0V is received by the silicon carbide switching tube 4, the silicon carbide switching tube 4 is disconnected, so that the capacitive load 5 receives a 0V voltage.

[0032] In addition, it should be noted that Figure 2 00a in Figure 3 00a in the circuit is connected. When not discharging, the first diode D1, the second diode D2, and the third diode D3 provide isolation, so that the anode voltage of the second diode D2 is at a low level of 0V and does not affect the 1.7V voltage at the cathode of the second diode D2. This is due to the isolation provided by the second diode D2. At this point, the positive input of the first comparator U2A is close to 0V or 3.3V. The voltage entering the negative input of the first comparator U2A is always approximately 1.7V. This 1.7V voltage is obtained through voltage divider R5 and R4.

[0033] In order to increase the anti-interference capability of the present application, in some embodiments of the present application, the power control system may further include a first high-speed optocoupler (2); wherein the input end of the first high-speed optocoupler (2) is connected to the output end of the single-chip microcomputer 1, and the output end of the first high-speed optocoupler 2 is connected to a 5V voltage. The 5V voltage at the output end of the first high-speed optocoupler 2 is divided by the R2 resistor and the R3 resistor so that the positive input end of the first comparator U2A inputs a 3.3V pulse when the level is high.

[0034] In this way, the 3.3V pulse entering the positive input terminal of the first comparator U2A and the 3.3V pulse output by the microcontroller 1 are not grounded together through the first high-speed optocoupler 2, thereby improving the anti-interference capability.

[0035] In addition, in some embodiments of the present application, the first comparator U2A and the second comparator U1A may belong to two chips respectively (refer to Figure 4 The comparator U2B is on the same chip as the first comparator U2A, and the comparator U1B is on the same chip as the second comparator U1A. This enhances the anti-interference capability between the first comparator U2A and the second comparator U1A, making the sputtering power supply control system of the present application more resistant to interference.

[0036] Since the single-chip microcomputer 1 is software controlled and has a slow response speed, in some embodiments of the present application, in order to make the system respond faster, a circuit can be used in combination with the single-chip microcomputer 1 for control. For example, in some embodiments of the present application, the sputtering power supply control system can further include a first diode D1, a second diode D2, and a third diode D3.

[0037] The input of the second high-speed optocoupler 6 includes the anode (A) and cathode (K) of the second high-speed optocoupler 6. The anode is connected to a 12V voltage, while the cathode is connected to the output of the second comparator U1A. The cathode is also connected in series with the first diode D1, resistors R16, and R15, with the cathode of the first diode D1 facing the second high-speed optocoupler 6. The anode of the first diode D1 is also connected to the second diode D2 and resistor R4, and then connected to the cathode of the first comparator U2A. The cathode of the second diode D2 faces the first comparator U2A. The cathode of the first comparator U2A is also connected to the third diode D3 and resistor R5, with the input of the resistor R5 connected to a 5V voltage. The anode of the third diode D3 faces the resistor R5.

[0038] This application uses the example of stopping 3 to 5 pulses when the device is internally discharged to illustrate. In other embodiments of this application, the number of pulses to be stopped is not limited and can be set on the microcontroller 1 according to user needs.

[0039] When there is no discharge inside the device, the current sampling resistor R11 cannot collect current. Therefore, the positive electrode of the second comparator U1A is always at a low level, and the second high-speed optocoupler 6 outputs a low level. Since the output end of the second high-speed optocoupler 6 is connected to the single-chip computer 1, at this time, the weak current circuit formed by the second comparator U1A that outputs a low level and the second high-speed optocoupler 6 will not control the single-chip computer 1.

[0040] When the device discharges internally and the current sampled by current sampling resistor R11 increases instantaneously, second comparator U1A outputs a high level of 12V. This high level of 12V is connected to input terminal K of second high-speed optocoupler 6. Input terminal A of second high-speed optocoupler 6 is also connected to 12V. Input terminal A of second high-speed optocoupler 6 is connected in series with first diode D1 and then connected to input terminal K of second high-speed optocoupler 6. This forms a loop, causing the diodes at input terminals K and A of second high-speed optocoupler 6 to not emit light. At this point, second high-speed optocoupler 6 outputs a high level of 3.3V to microcontroller 1. When microcontroller 1 detects the high level of 3.3V, it stops the PWM signal for 3 to 5 pulses.

[0041] In addition, the 12V voltage at the anode of the first diode D1 passes through the second diode D2 and the resistor R4 and is then connected to the negative input terminal of the first comparator U2A. The 5V voltage at the negative input terminal of the first comparator U2A is isolated by the second transistor D3.

[0042] When the device discharges internally, the voltage decreases from high to low. The 12V voltage between resistors R15 and R16 passes through R15 and the second diode D2, then through R4 and is divided by R5 to 6V, which then enters the negative input of the first comparator U2A. As a result, the voltage at the positive output of the second comparator U1A remains below 6V, whether at a high level of 3.3V or a low level of 0V. Therefore, regardless of whether the negative input of the second comparator U1A is high or low, the output of the first comparator U2A remains low, 0V, halting the intermediate frequency pulse output (the circuit cannot control the number of halt pulses), driving the silicon carbide switch 4 to disconnect and applying a 0V voltage to the capacitive load 5. Simultaneously, the second high-speed optocoupler 6 outputs a high level of 3.3V, which is fed back to the microcontroller 1 for control. Consequently, the microcontroller 1 stops outputting 3-5 pulses before continuing to output 3.3V pulses normally. In this way, the present application can achieve the desired output by stopping pulse output through circuit control and, at the same time, by stopping 3 to 5 pulses through the microcontroller 1. When the first comparator U2A outputs a constant low level of 0V, there is an instantaneous stop of pulse output, preventing the capacitive load 5 from receiving a pulse. This achieves a hardware-based stop of pulse output, resulting in a faster response.

[0043] In order to more clearly illustrate the technical solution of the present application, an embodiment of the present application further provides a control method of the sputtering power supply control system, comprising the following steps:

[0044] Set the capacitive load 5 voltage to 1000V on MCU 1, and set the number of 3.3VPWM pulse signals that MCU 1 stops outputting when receiving a high level to 3;

[0045] When the current sampling resistor R11 does not detect discharge:

[0046] Microcontroller 1 outputs a 3.3V PWM pulse signal, which is sent to first comparator U2A as a low-level signal when at a low level and as a high-level signal when at a high level. First comparator U2A converts the signal into a 12V high-level output when at a high level, and outputs a low-level output when at a low level. A totem-pole drive circuit 3 connected to the output of first comparator U2A turns on silicon carbide switch 4 when at a high level, applying 1000V to capacitive load 5. Totem-pole drive circuit 3 also turns off silicon carbide switch 4 when at a low level, applying 0V to capacitive load 5.

[0047] When the current sampling resistor R11 detects discharge:

[0048] The positive input terminal of the second comparator U1A obtains a high voltage, the output terminal of the second comparator U1A outputs a 12V voltage, and the second high-speed optocoupler 6 outputs a 3.3V high level to the microcontroller 1 to control the stop of the three PWM pulse signals; the negative input terminal of the first comparator U2A obtains a 6V voltage. Since the input voltage of the positive input terminal of the first comparator U2A is 0V or the high level 3.3V is less than 6V, the first comparator U2A always outputs a low level 0V, so that the totem pole drive circuit 3 drives the silicon carbide switch tube to disconnect, thereby stopping the pulse output.

[0049] The present application also includes a second comparator U1A, whose positive input terminal is connected to the silicon carbide switching tube 4, and the negative input terminal of the second comparator U1A is connected to a 0.5V voltage (it should be noted that the 0.5V voltage connected to the negative input terminal of the second comparator U1A can be divided by 5V through the R13 resistor and the R14 resistor to form a 0.5V voltage.), and the second comparator U1A outputs a low level of 0V when not discharging. The current sampling resistor R11 can use a 0.1Ω resistor for current sampling. When the device is discharged internally, the current increases instantaneously and the voltage becomes higher. At this time, when the voltage is higher than 0.5V, the second comparator U1A flips the level and outputs a high level of 12V. When there is no normal discharge, the voltage is close to 0V and less than 0.5V, and the second comparator U1A outputs a low level of 0V.

[0050] It should be noted that the 5V voltage input in the present application can be provided in the following ways. For example, in some embodiments of the present application, the 12V voltage is converted into the 5V voltage through 7805-500mA.

[0051] The present application uses diodes and high-speed optocouplers to make the 3.3V power supply and the single-chip computer 1 share the same ground, and the 200-1000V power supply and the 12V power supply share the same ground, thereby forming anti-interference and preventing mutual influence between components.

[0052] The following examples illustrate the high-speed optocoupler and comparator models mentioned above. For example, in some embodiments of the present application, the first high-speed optocoupler 2 and the second high-speed optocoupler 6 can adopt the TLP2362 model, and the first comparator U2A and the second comparator U1A can adopt the LM393DR2G model.

[0053] The following examples illustrate the above-mentioned resistor sizes, which are not limited in this application. For example, R1 = 470Ω, R2 = 10KΩ, R3 = 20KΩ, R4 = 10KΩ, R5 = 20KΩ, R6 = 1KΩ, R7 = 1KΩ, R8 = 2.2KΩ, R9 = 5Ω, R10 = 5Ω, R11 = 0.1Ω, R12 = 100Ω, R13 = 9KΩ, R14 = 1KΩ, R15 = 10KΩ, R16 = 2.2KΩ, and R17 = 2KΩ. This application does not limit the resistor sizes. Figure 4 The size of resistors R18 to R23 is not limited and will not be explained here.

[0054] The present invention further provides a coating machine comprising a controlled device and a sputtering power control system according to any of the above technical solutions, wherein the controlled device is electrically connected to the sputtering power control system. The controlled device may include a capacitive load 5, and the controlled device may include a process chamber. When a discharge occurs in the process chamber, a current sampling resistor R11 in the sputtering power control system may be used to sample the current, thereby controlling the controlled device to stop operating for a certain number of pulses.

[0055] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0056] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A sputtering power supply control system, characterized in that: include: Single chip microcomputer, output 3.3V PWM pulse signal; A first comparator, wherein the positive input terminal is connected to the output terminal of the single chip microcomputer, and when the positive terminal of the first comparator receives a low level, the first comparator outputs a low level and stops the pulse output; when the positive terminal of the first comparator receives a high level, the first comparator converts the 3.3V pulse into a 12V pulse output; a totem pole driving circuit connected to the output terminal of the first comparator; Two parallel silicon carbide switching tubes, the gates of which are connected to the output end of the totem pole drive circuit, the drains of which are connected to a capacitive load, and the two parallel silicon carbide switching tubes are configured to be connected when receiving a high level and disconnected when receiving a low level; a second comparator, wherein the positive input terminal is connected to the source of the silicon carbide switching tube, and the second comparator is configured to output a low level when the positive input terminal receives a low level, and is further configured to convert and output a 12V level when the positive input terminal receives a high level; a current sampling resistor connected to the source of the silicon carbide switching tube, configured to output a high level to the positive input terminal of the second comparator during discharge, and also configured to output a low level to the positive input terminal of the second comparator during non-discharge; a second high-speed optocoupler, whose input end is connected to the output end of the second comparator, whose output end is connected to the single-chip microcomputer, and whose second high-speed optocoupler is configured to output a low level when receiving a low level, and to output a high level of 3.3V when receiving a high level of 12V; The single chip microcomputer is used to stop outputting a plurality of PWM pulse signals when receiving the high level 3.3V output by the second high-speed optocoupler.

2. A sputtering power supply control system according to claim 1, characterized in that: The power control system further includes a first diode, a second diode and a third diode; The input end of the second high-speed optocoupler includes a second high-speed optocoupler positive electrode and a second high-speed optocoupler negative electrode; Among them, the positive pole of the second high-speed optocoupler is connected to a 12V voltage, the negative pole of the second high-speed optocoupler is connected to the output end of the second comparator, and the negative pole of the second high-speed optocoupler is also connected in series with the first diode; the positive pole of the first diode is also connected to the second diode and then connected to the negative pole of the first comparator; the negative pole of the first comparator is also connected to the third diode, and the positive pole of the third diode is connected to a 5V voltage.

3. A sputtering power supply control system according to claim 1 or 2, characterized in that: The power control system further includes a first high-speed optical coupler; Among them, the input end of the first high-speed optocoupler is connected to the output end of the microcontroller, the output end of the first high-speed optocoupler is connected to a 5V voltage, and the 5V voltage at the output end of the first high-speed optocoupler is divided by a resistor so that the positive input end of the first comparator inputs a 3.3V pulse when the level is high.

4. A sputtering power supply control system according to claim 3, characterized in that: The first comparator and the second comparator belong to two chips respectively.

5. A control method for a sputtering power supply control system, characterized in that: Including the power supply control system described in 3 or 4, the control method includes the following steps: Set the capacitive load voltage on the microcontroller to 200-1000V, and set the number of 3.3V PWM pulse signals that the microcontroller stops outputting when it receives a high level of 3.3V. When the current sampling resistor does not detect discharge: The single-chip microcomputer outputs a 3.3V PWM pulse signal, which is output to the first comparator at a low level when the signal is low, and to the first comparator at a high level when the signal is high. The first comparator converts the signal to output a 12V high level when the signal is high, and outputs a low level when the signal is low. The totem pole drive circuit connected to the output end of the first comparator turns on the silicon carbide switch tube when the signal is high, and the capacitive load receives a voltage of 200 to 1000V. The totem pole drive circuit is also used to turn off the silicon carbide switch tube when the signal is low, and the capacitive load receives a voltage of 0V. When the current sampling resistor detects discharge: The positive input terminal of the second comparator obtains a high voltage, the output terminal of the second comparator outputs a 12V voltage, and the second high-speed optocoupler outputs a 3.3V high level to the control terminal of the microcontroller, causing the microcontroller to stop several PWM pulse signals; the input voltage of the positive input terminal of the first comparator is less than the voltage obtained at the negative input terminal of the first comparator, and the first comparator always outputs a low level, thereby causing the totem pole drive circuit to drive the silicon carbide switch tube to turn off, thereby stopping the pulse output.

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