Electronic circuits, electronic systems and driving methods

Abstract

An electronic circuit, electronic system, and driving method are provided to suppress the generation of control voltage oscillations when a semiconductor switching element is turned on. The electronic circuit of the present invention includes: a semiconductor switching element; and a driving circuit that supplies current to a control terminal of the semiconductor switching element and adjusts the magnitude of the current supplied to the control terminal in accordance with the voltage of the control terminal.

Description

[0001] This application claims priority based on Japanese Patent Application No. 2021-147958 (filed on 09 / 10 / 2021), the entire contents of which are incorporated herein by reference. Technical Field

[0002] This invention relates to electronic circuits, electronic systems, and driving methods. Background Technology

[0003] When a semiconductor switching element is used as a semiconductor relay, a control voltage that rises at a slow rate (slope) is supplied to the control terminal of the semiconductor switching element to enable low-speed conduction. This suppresses the flow of large currents or the generation of overvoltages during conduction. However, during the rise of the control voltage, noise signals may sometimes be introduced near the threshold voltage, causing oscillations (fluctuations) in the control voltage. If oscillations occur, the semiconductor switching element will repeatedly turn on and off within a short period of time near the threshold voltage, leading to malfunction of the semiconductor switching element. Summary of the Invention

[0004] The present invention provides an electronic circuit, electronic system, and driving method for suppressing the generation of control voltage oscillations when a semiconductor switching element is turned on.

[0005] Methods used to solve problems

[0006] The electronic circuit of the present invention includes: a semiconductor switching element; and a driving circuit that supplies current to a control terminal of the semiconductor switching element and adjusts the magnitude of the current supplied to the control terminal in accordance with the voltage of the control terminal. Attached Figure Description

[0007] Figure 1 This is a block diagram of the electronic circuitry of the first embodiment.

[0008] Figure 2 This is a diagram illustrating an example of a current path.

[0009] Figure 3 This is another example of a diagram representing the path of an electric current.

[0010] Figure 4 This is a block diagram representing an example of an electronic circuit with control circuitry.

[0011] Figure 5 It means Figure 1 The timing diagram of the electronic circuit.

[0012] Figure 6 It means to use Figure 1 A block diagram of an example electronic system of electronic circuits.

[0013] Figure 7 This is a block diagram of the electronic circuitry of the second embodiment.

[0014] Figure 8 This is a block diagram of the electronic circuitry of the third embodiment.

[0015] Figure 9 This is a block diagram of the electronic circuitry of the third embodiment.

[0016] Label Explanation

[0017] 1 Electronic Circuits

[0018] 1A Electronic Circuit

[0019] 1B Electronic Circuits

[0020] 1C electronic circuit

[0021] 1D electronic circuits

[0022] 2 Electronic Systems

[0023] 110 drive circuit

[0024] 110B drive circuit

[0025] 110C drive circuit

[0026] 110D drive circuit

[0027] 120V supply circuit

[0028] 130 Control Circuit

[0029] 150 Circuit 1

[0030] 310 Commercial Power Supply

[0031] 320 rectifier

[0032] 330 Multi-Unit Converter

[0033] 340 Control Power Supply

[0034] Cg1 capacitor

[0035] Cg2 capacitor

[0036] Cds parasitic capacitance

[0037] Cgd parasitic capacitance

[0038] Cgs parasitic capacitance

[0039] S source terminal (1st terminal)

[0040] D drain terminal (terminal 2)

[0041] E Parasitic Diode

[0042] G gate terminal (control terminal)

[0043] Id drain current

[0044] N1 node

[0045] N2 node

[0046] N3 node

[0047] NGD Node

[0048] NI negative input terminal

[0049] NO negative output terminal

[0050] PGD ​​Node

[0051] PT1 path

[0052] PT2 path

[0053] Q Semiconductor switching element

[0054] Q1 switch

[0055] Q2 switch

[0056] Qg1 switch

[0057] Qg2 switch

[0058] Qg3 switch

[0059] Qg4 switch

[0060] Rd1 Resistive element (segmented resistor)

[0061] Rd2 Resistive element (segmented resistor)

[0062] Rg1 Resistor Element

[0063] Rg2 resistor element

[0064] Rg3 Resistor Element

[0065] Rg4 Resistor Element

[0066] Vds Drain-Source Voltage

[0067] Vgs Gate Voltage

[0068] Vr1 First reference value

[0069] Vr2 Second Reference Value

[0070] Vth threshold

[0071] XGD Node

[0072] YGD Node Detailed Implementation

[0073] The following is a reference to the appendix. Figure 1 Embodiments of the present invention will be described below. In the accompanying drawings, the same reference numerals are used for the same constituent elements, and descriptions are omitted where appropriate. Hereinafter, embodiments of the power conversion device will be described with reference to the accompanying drawings. The description will focus on the main components of the electronic circuit, electronic system, and drive device; however, the electronic circuit, electronic system, and drive device may contain components or functions not shown or described. The following description does not exclude components or functions not shown or described.

[0074] (First Embodiment)

[0075] Figure 1 This is a block diagram of the electronic circuit 1 according to the first embodiment. The electronic circuit 1 includes a semiconductor switching element Q, a drive circuit 110 that drives the semiconductor switching element Q, and a voltage supply circuit 120 that supplies an operating voltage to the drive circuit 110. The drive circuit 110 includes a first circuit 150 capable of adjusting impedance, and the first circuit 150 is connected to a control terminal of the semiconductor switching element Q. Hereinafter, an outline of the electronic circuit 1 will be described.

[0076] The semiconductor switching element Q can be used, for example, as a semiconductor relay connected in the wiring that connects the power supply to the load device (e.g., a DC-DC converter).

[0077] The drive circuit 110 generates a current to be supplied to the control terminal (gate terminal G) of the semiconductor switching element Q based on the voltage supplied from the voltage supply circuit 120, and supplies the generated current to the control terminal of the semiconductor switching element Q. The supplied current charges the parasitic capacitance Cgs between the gate and source of the semiconductor switching element Q. As a result, the voltage at the control terminal of the semiconductor switching element Q rises. The rate (slope) of the rise depends on the magnitude of the current supplied to the control terminal. The drive circuit 110 supplies a low magnitude current (first current) at the beginning of operation. As a result, the voltage at the control terminal rises at a low rate.

[0078] After the current supply begins, if the voltage at the control terminal becomes lower than the threshold voltage (the first reference value), i.e., if it approaches the threshold voltage, the drive circuit 110 increases the supplied current, setting it to the second current. This causes the voltage at the control terminal to rise at a high rate, rapidly increasing within a short time. During this period, the control voltage reaches the threshold voltage, and the semiconductor switching element Q turns on.

[0079] If the voltage at the control terminal reaches a value higher than the threshold voltage (the second reference value), the drive circuit 110 reduces the current to the third current. The third current can be the same size as the original current (the first current).

[0080] By increasing the magnitude of the supplied current during the period when the control voltage is near the threshold voltage, the time the voltage at the control terminal remains near the threshold voltage can be shortened. Therefore, during conduction, oscillations in the control voltage caused by noise signals can be suppressed. This prevents malfunctions such as repeated switching of the semiconductor switching element Q near the threshold voltage. Furthermore, because the control voltage rises at a low rate outside the period near the threshold voltage, large currents flowing into the semiconductor switching element Q during conduction can be prevented, ensuring safe startup of the semiconductor switching element.

[0081] Thus, the electronic circuitry of this embodiment prevents oscillations near the threshold voltage while simultaneously increasing the control voltage at a low slew rate. Hereinafter, [further details will be provided]. Figure 1 The electronic circuit 1 will be described in more detail.

[0082] Figure 1 The voltage supply circuit 120 supplies the operating voltage to the drive circuit 110. The supplied operating voltage is a DC voltage. The voltage supply circuit 120 can rectify an AC power supply (not shown) and generate the voltage supplied to the drive circuit 110 by stepping down or stepping up the rectified voltage. Alternatively, the voltage supply circuit 120 can also be an optocoupler that generates voltage (current) based on the received optical signal.

[0083] The semiconductor switching element Q is a MOS transistor such as a power MOSFET. However, the semiconductor switching element Q can also be other types of semiconductor transistors such as IGBTs. Figure 1 The example shown is an N-type power MOSFET, but it could also be a P-type power MOSFET.

[0084] In a semiconductor switching element Q, there exists a parasitic diode E between the drain terminal D (terminal 2) and the source terminal S (terminal 1), a parasitic capacitance Cds between the drain terminal D and the source terminal S, a parasitic capacitance Cgs between the gate terminal G and the source terminal S, and a parasitic capacitance Cgd between the gate terminal G and the drain terminal D. As an example, the drain terminal D can be connected to the negative output terminal of the power supply, and the source terminal S can be connected to the negative input terminal of the load device (e.g., a DC-DC converter).

[0085] The driving circuit 110 generates a current based on the voltage supplied from the voltage supply circuit 120, with a magnitude corresponding to the voltage (control voltage or gate voltage) at the gate terminal G of the semiconductor switching element Q and the gate resistors Rg1 and Rg2. The driving circuit 110 supplies the generated current to the gate terminal G. The driving circuit 110 adjusts or switches the magnitude of the supplied current in accordance with the value of the gate voltage of the semiconductor switching element Q. The supplied current charges the parasitic capacitance Cgs, causing the gate voltage to rise.

[0086] During the period (first period) until the gate voltage reaches a first reference value lower than the threshold of the semiconductor switching element Q, the drive circuit 110 sets the supplied current to a first current.

[0087] If the gate voltage exceeds the first reference value, the drive circuit 110 changes the current to a second current that is larger than the first current. The drive circuit 110 maintains the second current during the period (the second period) until the gate voltage reaches the second reference value that is higher than the threshold of the semiconductor switching element Q.

[0088] If the gate voltage reaches a second reference value higher than the threshold of the semiconductor switching element Q, the drive circuit 110 changes the supplied current to a third current lower than the second current. The third current can be the same magnitude as the first current or a different magnitude. The period using the third current after the second period corresponds to the third period. As an example, the third period can be the period from the second period until the semiconductor switching element Q begins to turn off, or it can be a period some time after the second period.

[0089] Therefore, during the period (region) near the threshold voltage, the gate voltage rises at a high rate, while in other regions, the gate voltage rises at a low rate. This suppresses gate voltage oscillations near the threshold voltage. The specific structure of the drive circuit 110 will be described below.

[0090] The drive circuit 110 has a node PGD connected to the positive terminal of the voltage supply circuit 120 and a node NGD connected to the negative terminal. Resistors (segment resistors) Rd1 and Rd2 are connected in series between nodes PGD and NGD. The connection node between the segment resistors Rd2 and Rd1 corresponds to node N1.

[0091] Capacitors Cg1 and Cg2 are connected in series between nodes PGD and NGD. The connection node between capacitors Cg1 and Cg2 corresponds to node N2. Capacitors Cg1 and Cg2 are connected in parallel with dividing resistors Rd1 and Rd2, respectively. Capacitor Cg1 maintains the first voltage, and capacitor Cg2 maintains the second voltage.

[0092] A first circuit 150 is connected between nodes PGD and NGD. The first circuit 150 is connected in series with switch Qg1 (first switch), resistor Rg1 (first resistor), switch Qg3 (second switch), switch Qg2 (third switch), resistor Rg2 (second resistor), and switch Qg4 (fourth switch). By controlling the on / off state of each switch Qg1 to Qg4, the impedance (resistance) of the first circuit 150 can be adjusted.

[0093] Switch Qg1, resistor Rg1, switch Qg3, and capacitor Cg1 are connected in series and then in parallel. Switch Qg2, resistor Rg2, switch Qg4, and capacitor Cg2 are also connected in series and then in parallel. The connection node between switch Qg3 and switch Qg2 corresponds to node N3.

[0094] Switch Qg1 and resistor Rg1 are connected in series between the first terminal (or the potential of the first terminal of capacitor Cg1) and the gate terminal G. Switch Qg3 is connected between the first terminal (or the second potential of the first terminal of capacitor Cg2) and the gate terminal G. Switch Qg2 and resistor Rg2 are connected in series between the second terminal of capacitor Cg1 and the source terminal S (first terminal) of semiconductor switching element Q. Switch Qg4 is connected between the second terminal of capacitor Cg2 and the source terminal S of semiconductor switching element Q.

[0095] The drive circuit 110 has a node XGD connected to the gate terminal G of the semiconductor switching element Q and a node YGD connected to the source terminal S of the semiconductor switching element Q.

[0096] The drive circuit 110 controls the switching on / off of switches Qg1 to Qg4, adjusts the impedance (resistance) of the first circuit 150, and thereby controls the magnitude of the current supplied to the gate terminal of the semiconductor switching element Q.

[0097] Figure 2This refers to path PT1, which represents the current flowing when switches Qg1 and Qg2 are turned on and switches Qg3 and Qg4 are turned off. Path PT1 is used when the impedance of the first circuit 150 is set high and a small current is supplied. Path PT1 is used in the first period (from the input of the control signal to turn on switches Q1 and Q2 until the gate voltage Vgs reaches the first reference value) and the third period (after the gate voltage Vgs reaches the second reference value). Based on the voltage held by capacitor Cg1 (the first voltage), a current corresponding to the impedance (resistance) of path PT1 is supplied to the gate terminal G. Path PT1 passes through resistors Rg1 and Rg2 in the path and return of the current charging capacitor Cgs from capacitor Cg1. Because path PT1 passes through resistors Rg1 and Rg2, it has a high resistance or high impedance value, resulting in a smaller current supplied to the gate terminal G. As a result, the parasitic capacitance Cgs of the semiconductor switching element Q charges at a slow rate, and consequently, the gate voltage rises at a slow rate.

[0098] Figure 3 This refers to path PT2, which represents the current flowing when switches Qg3 and Qg4 are turned on and switches Qg1 and Qg2 are turned off. Path PT2 is used when the impedance of the first circuit 150 is set low to supply a large current. Specifically, path PT2 is used during the second period described above (the period from when the gate voltage Vgs reaches the first reference value until it reaches the second reference value). Based on the voltage held by capacitor Cg2 (the second voltage), a current corresponding to the impedance (resistance) of path PT2 is supplied to the gate terminal G. Path PT2 does not pass through resistive elements Rg1 and Rg2. Path PT2 has a lower resistance or lower impedance value compared to path PT1, resulting in a larger current supplied to the gate terminal G. Consequently, the capacitor Cgs of the semiconductor switching element Q charges rapidly, and the gate voltage rises at a high rate.

[0099] Furthermore, the voltage (potential difference) maintained by capacitor Cg2 and the voltage (potential difference) maintained by capacitor Cg1 can be the same or different, as long as the magnitude of the current supplied to the gate terminal G can be adjusted to the desired value.

[0100] During the first and third periods, the drive circuit 110 sets switches Qg1 to Qg4 to... Figure 2 The state shown is set to during the second period. Figure 3 The state shown. As a specific structural example of controlling switches Qg1 to Qg4 according to the control voltage, a control circuit can be provided to detect the gate voltage and control the drive circuit 110 based on the detected gate voltage. The control circuit compares the gate voltage with a first reference value and a second reference value, and controls switches Qg1 to Qg4 according to the comparison result. Figure 4 The text in the image represents a structural example in this case.

[0101] Figure 4 This illustrates an example of an electronic circuit 1A equipped with a control circuit 130. If the control circuit 130 receives a start signal from an external circuit, it sets switches Qg1 and Qg2 to ON and switches Qg3 and Qg4 to OFF (see reference). Figure 2 If the gate voltage reaches the first reference value (less than the threshold voltage), then switches Qg1 and Qg2 are set to open, and switches Qg3 and Qg4 are set to close (refer to...). Figure 3 If the gate voltage reaches the second reference value (a value greater than the threshold voltage), then switches Qg1 and Qg2 are turned on again, and switches Qg3 and Qg4 are turned off (refer to...). Figure 2 As a specific example of the control circuit 130, the control circuit 130 may also have a voltage detection circuit for detecting the gate voltage, and a first comparison circuit for comparing a first reference value with the gate voltage and generating control signals for switches Qg1 to Qg4 based on the comparison result. Furthermore, the control circuit 130 may also have a second comparison circuit for comparing a second reference value with the gate voltage and generating control signals for switches Qg1 to Qg4 based on the comparison result.

[0102] As another example of a structure for controlling switches Qg1 to Qg4, the lengths of the first and second periods can be preset, and the drive circuit 110 controls switches Qg1 to Qg4 based on the elapsed time from the start of the operation. For example, the electronic circuit 1 is equipped with a first timer to detect the elapsed first period and a second timer to detect the elapsed second period. Corresponding to the input of the start signal, the electronic circuit 1 sets switches Qg1 and Qg2 to be on, sets switches Qg3 and Qg4 to be off, and starts the first and second timers. The length of the first period is set for the first timer, and the combined length of the first and second periods is set for the second timer. If the first timer times out, a timeout signal is output, the drive circuit 110 receives the timeout signal, sets switches Qg1 and Qg2 to be off, and sets switches Qg3 and Qg4 to be on. If the second timer times out, it outputs a timeout signal. The drive circuit 110 receives the timeout signal and sets switches Qg1 and Qg2 to ON and switches Qg3 and Qg4 to OFF. Similarly, a timer can be set to detect the elapsed time of the third period.

[0103] Alternatively, a specific structure for controlling switches Qg1 to Qg4 can be achieved using methods other than those described above.

[0104] Figure 5 express Figure 1 The timing diagram of electronic circuit 1 is shown below. Details are as follows.

[0105] Figure 5 (A) represents the timing diagram of the control signals (on / off signals) of switches Qg1 and Qg2.

[0106] Figure 5 (B) represents the timing diagram of the control signals for switches Qg3 and Qg4.

[0107] Figure 5 (C) represents the timing diagram of the gate voltage (Vgs voltage) of the semiconductor switching element Q.

[0108] Figure 5 (D) represents the timing diagram of the current supplied to the gate terminal G of the semiconductor switching element Q.

[0109] Figure 5 (E) represents the timing diagram of the drain-source voltage Vds of the semiconductor switching element Q.

[0110] During the first period, from the start of operation until the gate voltage reaches a first reference value Vr1 lower than the threshold Vth, the parasitic capacitance Cgs of the semiconductor switching element Q is charged slowly via resistors Rg1 and Rg2 by turning on switches Qg1 and Qg2 and turning off switches Qg3 and Qg4. That is, the gate voltage rises gradually (at a low rate). During this first period, no drain current Id flows through the semiconductor switching element Q, and the drain-source voltage Vds remains high.

[0111] If the gate voltage reaches the first reference value Vr1, then for a short period (the second period), switches Qg1 and Qg2 are set to open, and switches Qg3 and Qg4 are set to close, rapidly charging the parasitic capacitance Cgs of the semiconductor switching element Q. The gate voltage rises at a high rate, exceeding the threshold Vth in a short time. At this time, the drain current Id rises with a large slope, and correspondingly, the drain-source voltage Vds decreases with a large slope.

[0112] After the second period, i.e., after the gate voltage reaches a second reference value Vr2 that is greater than the threshold Vth, similarly to the first period, switches Qg1 and Qg2 are turned on, and Qg3 and Qg4 are turned off. This causes the parasitic capacitance Cgs of the semiconductor switching element Q to charge at a slow rate. That is, the gate voltage rises gradually (at a low rate). At this time, the slope of the drain current Id decreases, and correspondingly, the slope of the decrease in the drain-source voltage Vds also decreases. Furthermore, the magnitude of the current supplied to the gate terminal G converges accordingly to the amount of charging of the parasitic capacitance Cgs of the semiconductor switching element Q, and the gate voltage Vgs also converges to a predetermined value.

[0113] Figure 6It means that it was used Figure 1 A block diagram of an example of electronic circuit 1 and electronic system 2. Figure 6 In this example, a semiconductor relay (semiconductor switching element Q) is provided as a switch between the rectifier 320, which rectifies the AC voltage supplied from the commercial power supply 310 (distributor, etc.), and the multi-unit converter 330 (DC-DC converter), which serves as a load device. At this time, the semiconductor switching element Q is used for control. Figure 1 The drive circuit 110. The multi-unit converter 330 steps down or boosts the DC voltage rectified by the rectifier 320 and outputs the boosted or boosted voltage to the subsequent device. The multi-unit converter 330 can also output a voltage equal to the input voltage. Alternatively, it can replace the commercial power supply 310 and the rectifier 320 with a DC power supply such as a battery. Figure 6 The structure of the multi-unit converter 330 shown is an example, and its structure is not particularly limited. Figure 6 An example of the multi-unit converter 330 shown has the following structure: it has multiple unit blocks, each unit block having multiple units with input terminals connected in series and output terminals connected in parallel, the input terminals of the multiple unit blocks being connected in parallel between the terminals of the rectifier 320, and the output terminals of the multiple unit blocks being connected in series between the output terminals of the multi-unit converter 330.

[0114] The control power supply 340 uses AC voltage supplied from commercial power supply 310 to generate the operating voltage of the drive circuit 110 of electronic circuit 1. The control power supply 340 may include... Figure 1 Voltage supply circuit 120 and Figure 5 At least one of the control circuits 130. The control power supply 340 provides the generated operating voltage to the drive circuit 110. In addition, the control power supply 340 controls each unit of the multi-unit converter 330. The control power supply 340 may also supply a start signal for controlling the start of the drive circuit 110 to the drive circuit 110 or the electronic circuit 1.

[0115] The drain terminal D (second terminal) of the semiconductor switching element Q is electrically connected to the negative output terminal NO of the commercial power supply 310 or the negative output terminal of the rectifier 320. The source terminal S of the semiconductor switching element Q is connected to the negative input terminal NI of the multi-unit converter 330.

[0116] exist Figure 6 When the electronic system starts up, the semiconductor switching element Q needs to be turned on. Under the control of the control power supply 340, the drive circuit 110 begins the turning-on action of the semiconductor switching element Q (see reference). Figure 5At this time, a noise signal is generated from the multi-unit converter 330 or a surrounding (not shown) device, and the generated noise signal may be input to the gate terminal G of the semiconductor switching element Q. Even when a noise signal is input to the gate terminal G, the gate voltage can be rapidly increased for a short period of time while the gate voltage is near the threshold voltage, thus suppressing the occurrence of oscillations caused by the noise signal. During periods other than this short period when the gate voltage rises rapidly, the gate voltage rises slowly, so the semiconductor switching element Q can be safely turned on, thereby enabling the electronic system 2 to be safely started.

[0117] According to this embodiment, when the gate voltage of the semiconductor switching element approaches the threshold voltage, the gate voltage is rapidly increased within a short period of time, exceeding the threshold voltage during this period. This avoids oscillations caused by noise signal interference when the gate voltage is close to the threshold value.

[0118] (Variation Example 1)

[0119] exist Figure 2 There are two resistor elements Rg1 and Rg2 in the path PT1, but resistor element Rg2 can also be removed. Alternatively, resistor element Rg1 can be removed, either in place of Rg2 or together with Rg2. When at least one of resistor elements Rg1 and Rg2 is removed, the impedance can be set to a desired value by adjusting the internal resistance of at least one of the switches Qg1 and Qg2, allowing a desired current to be supplied to the gate terminal G. This reduces the number of components and the circuit area.

[0120] (Variation Example 2)

[0121] It can also be done in Figure 1 The two capacitors Cg1 and Cg2 are removed. In this case, the voltage generated by the dividing resistor Rd1 (the first voltage) and the voltage generated by the dividing resistor Rd2 (the second voltage) can be directly supplied to the first circuit 150. As a result, the number of components can be reduced and the circuit area can be decreased.

[0122] (Variation Example 3)

[0123] It can also be done in Figure 1 By removing the two dividing resistors Rd1 and Rd2, capacitors Cg1 and Cg2 are directly charged with the first and second voltages, respectively. This reduces the number of components and the circuit area.

[0124] (Second Implementation)

[0125] Figure 7This is a block diagram of the electronic circuit 1B according to the second embodiment. Resistive elements Rg3 and Rg4 are provided in the drive circuit 110B. The resistive elements Rg3 and Rg4 move along the aforementioned... Figure 3 The path PT2 configuration is shown. That is, resistors Rg3 and Rg4 exist in the current path when switches Qg3 and Qg4 are turned on during the second period. Resistor Rg3 and switch Qg3 are connected in series between the first terminal of capacitor Cg2 and the gate terminal G. Resistor Rg4 and switch Qg4 are connected in series between the second terminal of capacitor Cg2 and the source terminal S (first terminal).

[0126] Resistor Rg3 is connected between switches Qg3 and Qg2. Resistor Rg3 is also connected between node N3 and switch Qg3. Switch Qg1, resistor Rg1, switch Qg3, and resistor Rg3 connected in series are connected in parallel with capacitor Cg1. Resistor Rg4 is connected to one end of switch Qg4, and the other end of switch Qg4 is connected to resistor Rg2. Furthermore, switch Qg2, resistor Rg2, switch Qg4, and resistor Rg4 connected in series are connected in parallel with capacitor Cg2.

[0127] By adding resistors Rg3 and Rg4 along path PT2, the resistance (impedance) of path PT2 increases. This allows the rate of rise of the gate voltage (the magnitude of the current supplied to the gate terminal) during the second period to be adjusted (suppressed) to a desired value. Variable resistors Rg3 and Rg4 can be used to adjust their resistance values. This makes it easier and more flexible to adjust the rate of rise of the gate voltage.

[0128] exist Figure 7 Two additional resistors, Rg3 and Rg4, were added, but only one resistor can be added.

[0129] Alternatively, instead of adding two resistors, the impedance of the first circuit 150 can be adjusted by adjusting the internal resistance values ​​of switches Qg3 and Qg4. This also allows adjustment of the rise rate of the gate voltage (the magnitude of the current supplied to the gate terminal) during the second period.

[0130] According to the second embodiment, by adding a resistor element to path PT2, the rise rate of the gate voltage during the second period can be adjusted (suppressed) to a desired value.

[0131] (Third Implementation)

[0132] Figure 8This is a block diagram of the electronic circuit 1C according to the third embodiment. The drive circuit 110C includes multiple switches Qg1, multiple resistors Rg1, multiple switches Qg3, multiple resistors Rg3, multiple switches Qg2, multiple resistors Rg2, multiple switches Qg4, and multiple resistors Rg4. Switches Qg1 to Qg4 are independently switched on or off from other switches of the same type. In the drive circuit 110C, multiple switches Qg1, resistors Rg1, Qg3, and Rg3 are connected in parallel with respect to capacitor Cg1, and are connected in series. Similarly, multiple switches Qg2, resistors Rg2, Qg4, and Rg4 are connected in parallel with respect to capacitor Cg2, and are connected in series.

[0133] In other words, multiple switches Qg1 and resistors Rg1 connected in series are connected in parallel between the first terminal of capacitor Cg1 and the gate terminal G. Multiple switches Qg3 and resistors Rg3 connected in series are connected in parallel between the first terminal of capacitor Cg2 and the gate terminal G. Multiple switches Qg2 and resistors Rg2 connected in series are connected in parallel between the second terminal of capacitor Cg1 and the source terminal S. Multiple switches Qg4 and resistors Rg4 connected in series are connected in parallel between the second terminal of capacitor Cg2 and the source terminal S.

[0134] Other structures are the same as in the second embodiment. Figure 7 The electronic circuit 1A is the same.

[0135] pass Figure 8 The structure allows for finer adjustment of the resistance (impedance) of the current path PT1 in the first and third periods, and the resistance (impedance) of the current path PT2 in the second period. For example, to reduce the rate (slope) of the gate voltage rise in the second period, the number of switched-on switches in at least one of the switch groups of multiple switches Qg3 and multiple switches Qg4 can be reduced. Conversely, to increase the rate (slope) of the gate voltage rise in the second period, the number of switched-on switches in at least one of the switch groups of multiple switches Qg3 and multiple switches Qg4 can be increased.

[0136] Similarly, if it is desired to reduce the rate (slope) of the gate voltage rise in the first or third period, it is sufficient to reduce the number of switched-on switches in at least one of the switch groups of multiple switches Qg1 and multiple switches Qg2. Conversely, if it is desired to increase the rate (slope) of the gate voltage rise in the first or third period, it is sufficient to increase the number of switched-on switches in at least one of the switch groups of multiple switches Qg1 and multiple switches Qg2.

[0137] According to the third embodiment, the rise rate of the gate voltage in the first and third periods and the rise rate of the gate voltage in the second period can be more flexibly adjusted to desired values.

[0138] (Fourth implementation)

[0139] Figure 9 This is a block diagram of the electronic circuit 1D related to the third embodiment. The description relates to the third embodiment. Figure 8 The difference lies in the electronic circuit 1C. In the drive circuit 110D, the dividing resistor Rd2 and capacitor Cg2 are not provided. Furthermore, the switch Qg4 and resistor Rg4 are not provided. The switch Qg2 and resistor Rg2 are used not only in the first and third periods, but also in the second period.

[0140] As an example, to reduce the rise rate of the gate voltage in periods 1 and 3, the number of switches Qg2 that are turned on is reduced. Similarly, the rise rate of the gate voltage in periods 1 and 3 can also be adjusted by changing the number of switches Qg1 that are turned on. Furthermore, the rise rate of the gate voltage in periods 1 and 3 can be adjusted more flexibly by changing the number of switches turned on for both Qg1 and Qg2. The resistance values ​​of resistors Rg1 and Rg3 can be the same or different.

[0141] If it is desired that the gate voltage rise rate in the second period is greater than that in the first and third periods, simply increase the number of switched-on switches Qg2 compared to the first and third periods. Similarly, the gate voltage rise rate in the second period can also be adjusted by changing the number of switched-on switches Qg3. Furthermore, the gate voltage rise rate in the second period can be adjusted more flexibly by changing the number of switched-on switches Qg2 and Qg3. The resistance values ​​of resistors Rg2 and Rg3 can be the same or different.

[0142] According to the fourth embodiment, the dividing resistor Rd2, capacitor Cg2, switch Qg4, and resistor Rg4 are removed, and switch Qg2 and resistor Rg2 are shared during the first to third periods. This reduces the number of components and decreases the size of the electronic circuit or the drive circuit.

[0143] Furthermore, the present invention is not limited to the embodiments described above, and the constituent elements can be modified and embodied in practice without departing from its spirit. In addition, various inventions can be formed by appropriate combinations of the multiple constituent elements disclosed in the above embodiments. For example, several constituent elements may be deleted from all the constituent elements represented in the embodiments. Furthermore, constituent elements across different embodiments may be appropriately combined.

[0144] [Technical Solution 1]

[0145] An electronic circuit having:

[0146] Semiconductor switching elements; and

[0147] The driving circuit supplies current to the control terminal of the semiconductor switching element and adjusts the magnitude of the current supplied to the control terminal in accordance with the voltage of the control terminal.

[0148] [Technical Solution 2]

[0149] The electronic circuit described in technical solution 1, wherein,

[0150] The drive circuit supplies a first current during a first period until the voltage at the control terminal reaches a first reference value that is lower than the threshold voltage of the semiconductor switching element.

[0151] After the first period, the current supplied to the control terminal will be set to a second current that is greater than the first current.

[0152] [Technical Solution 3]

[0153] The electronic circuit described in technical solution 2, wherein,

[0154] After the first period, the driving circuit maintains the second current during a second period until a second reference value higher than the threshold voltage of the semiconductor switching element is reached.

[0155] After the second period described above, the current supplied to the control terminal will be set to a third current that is smaller than the second current.

[0156] [Technical Solution 4]

[0157] The electronic circuit as described in any one of technical solutions 1 to 3, wherein,

[0158] The aforementioned drive circuit includes a first circuit capable of adjusting impedance, the first circuit being connected to the control terminal of the aforementioned semiconductor switching element;

[0159] The aforementioned drive circuit adjusts the magnitude of the current supplied to the aforementioned control terminal by adjusting the impedance of the aforementioned first circuit.

[0160] [Technical Solution 5]

[0161] The electronic circuit described in technical solution 4, wherein...

[0162] The first circuit mentioned above includes:

[0163] A first resistive element and a first switch connected in series between the first voltage and the control terminal of the aforementioned semiconductor switching element; and

[0164] A second switch connected between the second voltage and the control terminal of the aforementioned semiconductor switching element;

[0165] The magnitude of the current can be adjusted by switching the first switch and the second switch.

[0166] [Technical Solution 6]

[0167] The electronic circuit described in technical solution 5, wherein...

[0168] It has at least one of the first capacitor that maintains the first voltage and the second capacitor that maintains the second voltage;

[0169] The first resistive element and the first switch are connected in series between the first terminal of the first capacitor and the control terminal; or, the first resistive element and the first switch are connected in series between the first terminal of the first capacitor and the control terminal, and the second switch is connected between the first terminal of the second capacitor and the control terminal.

[0170] [Technical Solution 7]

[0171] The electronic circuit described in technical solution 6, wherein...

[0172] The second terminal of the first capacitor is connected to the first terminal of the semiconductor switching element.

[0173] The second terminal of the second capacitor is connected to the first terminal of the semiconductor switching element.

[0174] [Technical Solution 8]

[0175] The electronic circuit described in technical solution 6 or 7, wherein...

[0176] The first circuit mentioned above includes a second resistor and a third switch connected in series between the second terminal of the first capacitor and the first terminal of the semiconductor switching element.

[0177] [Technical Solution 9]

[0178] The electronic circuit as described in any one of technical solutions 6 to 8, wherein...

[0179] The first circuit mentioned above includes a fourth switch connected between the second terminal of the second capacitor and the first terminal of the semiconductor switching element.

[0180] [Technical Solution 10]

[0181] The electronic circuit described in technical solution 9, wherein...

[0182] The fourth switch and the fourth resistor are connected in series between the second terminal of the second capacitor and the first terminal of the semiconductor switching element.

[0183] [Technical Solution 11]

[0184] The electronic circuit as described in any one of technical solutions 6 to 10, wherein,

[0185] The second switch and the third resistor are connected in series between the first terminal of the second capacitor and the control terminal of the semiconductor switching element.

[0186] [Technical Solution 12]

[0187] The electronic circuit described in technical solution 6, wherein...

[0188] Multiple of the first resistive elements and the first switch described above, which are connected in series, are connected in parallel.

[0189] [Technical Solution 13]

[0190] The electronic circuit described in technical solution 8, wherein...

[0191] The second resistor and the third switch are connected in parallel and in series.

[0192] [Technical Solution 14]

[0193] The electronic circuit described in technical solution 10, wherein,

[0194] Multiple of the aforementioned fourth switches and the aforementioned fourth resistors, which are connected in series, are connected in parallel.

[0195] [Technical Solution 15]

[0196] The electronic circuit described in technical solution 11, wherein,

[0197] Multiple of the aforementioned second switches and the aforementioned third resistors, which are connected in series, are connected in parallel.

[0198] [Technical Solution 16]

[0199] The electronic circuit described in technical solution 6, wherein...

[0200] Between the first terminal of the first capacitor and the control terminal of the semiconductor switching element, a plurality of the first resistor elements and the first switch connected in series are connected in parallel.

[0201] Between the first terminal of the second capacitor and the control terminal of the semiconductor switching element, a plurality of the second switch and the third resistor elements connected in series are connected in parallel.

[0202] Between the second terminal of the first capacitor and the first terminal of the semiconductor switching element, a plurality of second resistors and a third switch connected in series are connected in parallel.

[0203] Between the second terminal of the second capacitor and the first terminal of the semiconductor switching element, a plurality of fourth switches and fourth resistors connected in series are connected in parallel.

[0204] [Technical Solution 17]

[0205] The electronic circuit as described in any one of technical solutions 1 to 16, wherein,

[0206] It has a control circuit that detects the voltage of the control terminal and controls the drive circuit based on the detected voltage.

[0207] [Technical Solution 18]

[0208] An electronic system having:

[0209] The electronic circuit according to any one of claims 1 to 17;

[0210] A load device is connected to the first terminal of the aforementioned semiconductor switching element;

[0211] The power supply is connected to the second terminal of the aforementioned semiconductor switching element; and

[0212] Control the power supply to control the aforementioned drive circuit.

[0213] [Technical Solution 19]

[0214] A driving method, wherein,

[0215] Supply current to the control terminals of the semiconductor switching element;

[0216] The magnitude of the current supplied to the control terminal is adjusted in accordance with the voltage of the control terminal.

Claims

1. An electronic circuit having: Semiconductor switching elements; The first capacitor maintains the first voltage; The first resistive element and the first switch are connected in series between the first terminal of the first capacitor and the control terminal of the semiconductor switching element; The second switch is connected between the second terminal of the first capacitor and the control terminal of the semiconductor switching element. The second resistive element and the third switch are connected between the second terminal of the first capacitor and the first terminal of the semiconductor switching element. The first terminal of the second capacitor is connected to the second terminal of the first capacitor. A fourth switch is connected between the second terminal of the second capacitor and the first terminal of the semiconductor switching element; and The drive circuit, in the first period, sets the first switch and the third switch to be turned on and sets the second switch and the fourth switch to be turned off, and in the second period, sets the first switch and the third switch to be turned off and sets the second switch and the fourth switch to be turned on.

2. The electronic circuit as described in claim 1, wherein, The first period mentioned above is the period until the voltage at the control terminal reaches a first reference value that is lower than the threshold voltage of the semiconductor switching element. The second period mentioned above is the period after the voltage of the control terminal reaches the first reference value.

3. The electronic circuit as described in claim 2, wherein, The second period mentioned above is the period following the first period, up to the point where a second reference value higher than the threshold voltage of the semiconductor switching element is reached; During the third period following the second period, the first and third switches are set to ON, and the second and fourth switches are set to OFF.

4. The electronic circuit as described in claim 1, wherein, The fourth switch and the fourth resistor are connected in series between the second terminal of the second capacitor and the first terminal of the semiconductor switching element.

5. The electronic circuit as described in claim 1, wherein, The second switch and the third resistor are connected in series between the first terminal of the second capacitor and the control terminal of the semiconductor switching element.

6. The electronic circuit as claimed in claim 1, wherein, Multiple of the first resistive elements and the first switch described above, which are connected in series, are connected in parallel.

7. The electronic circuit as claimed in claim 1, wherein, The second resistor and the third switch are connected in parallel and in series.

8. The electronic circuit as claimed in claim 4, wherein, Multiple of the aforementioned fourth switches and the aforementioned fourth resistors, which are connected in series, are connected in parallel.

9. The electronic circuit as described in claim 5, wherein, Multiple of the aforementioned second switches and the aforementioned third resistors, which are connected in series, are connected in parallel.

10. The electronic circuit as claimed in claim 1, wherein, Between the first terminal of the first capacitor and the control terminal of the semiconductor switching element, a plurality of the first resistor elements and the first switch connected in series are connected in parallel. Between the first terminal of the second capacitor and the control terminal of the semiconductor switching element, a plurality of the second switch and the third resistor elements connected in series are connected in parallel. Between the second terminal of the first capacitor and the first terminal of the semiconductor switching element, a plurality of the second resistor elements and the third switch connected in series are connected in parallel. Between the second terminal of the second capacitor and the first terminal of the semiconductor switching element, a plurality of fourth switches and fourth resistors connected in series are connected in parallel.

11. The electronic circuit as claimed in claim 1, wherein, It has a control circuit that detects the voltage of the control terminal and controls the first to fourth switches based on the detected voltage.

12. An electronic system having: The electronic circuit according to claim 1; A load device is connected to the first terminal of the aforementioned semiconductor switching element; The power supply is connected to the second terminal of the aforementioned semiconductor switching element; and Control the power supply to control the aforementioned drive circuit.

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