Method and device for determining pattern accuracy of mask

Abstract

The present application provides a method and apparatus for determining the graphic accuracy of a mask. In the mask, the first coordinate identifier includes a first identifier block and a second identifier block that are perpendicular to each other, and the second coordinate identifier includes a third identifier block and a fourth identifier block, wherein the third identifier block is parallel to the first identifier block, and the fourth identifier block is parallel to the second identifier block. The method comprises: obtaining a target identifier spacing, which is the identifier spacing of the mask to be tested, and the identifier spacing includes a first spacing and a second spacing, wherein the first spacing is the minimum distance between the third identifier block and the first identifier block, and the second spacing is the minimum distance between the fourth identifier block and the second identifier block; and determining a target graphic offset based on the target identifier spacing, wherein the target graphic offset is the graphic offset of the mask to be tested, and the graphic offset is the difference between the actual position and the designed position of the effective area. This method solves the problem of high cost in measuring the graphic accuracy of the mask in the prior art.

Description

Technical Field

[0001] The present application relates to the field of semiconductors, and in particular to a method for determining the graphic accuracy of a mask, a determination device, a computer-readable storage medium, a processor, and an electronic device. Background Art

[0002] The accuracy of pattern positioning during the mask manufacturing process is crucial. However, existing methods and equipment for measuring mask pattern accuracy are limited and expensive. Traditionally, low-quality masks are measured using an overlay method, which primarily overlays the product's registration mark patterns to measure their offset. As technology upgrades and high-quality products reach nanometer-level precision, mask pattern positioning accuracy is primarily measured using IPRO equipment from KLA. The IPRO mask positioning measurement system utilizes lasers and optical masks to provide accurate and rapid verification of pattern positioning performance. By comprehensively characterizing mask pattern position errors, IPRO can collect data during the development and production of high-node masks and use it for calibration of e-beam mask writers and mask quality control. Utilizing KLA's model-based measurement algorithms, IPRO can accurately measure the positioning errors of multiple features on the target and multiple devices, providing comprehensive characterization information and reducing mask-induced device overlay errors.

[0003] Therefore, in the prior art, measurement of the pattern accuracy of the mask relies on high-cost measurement equipment, which results in a high measurement cost for the pattern accuracy of the mask.

[0004] The above information disclosed in the background technology section is only used to enhance the understanding of the background technology of the technology described in this article. Therefore, the background technology may contain certain information that does not form the prior art known in this country to those skilled in the art. Summary of the Invention

[0005] The main purpose of this application is to provide a method for determining the graphic accuracy of a mask, a determination device, a computer-readable storage medium, a processor, and an electronic device, so as to solve the problem in the prior art that the measurement of the graphic accuracy of the mask relies on high-cost measurement equipment, resulting in high measurement costs for the graphic accuracy.

[0006] According to one aspect of an embodiment of the present invention, a method for determining the graphic accuracy of a mask is provided, wherein the mask is composed of an effective area and a coordinate identification area, the coordinate identification area includes a first coordinate identification and a second coordinate identification, the first coordinate identification includes a first identification block and a second identification block that are perpendicular to each other, the second coordinate identification includes a third identification block and a fourth identification block, the third identification block is parallel to the first identification block, and the fourth identification block is parallel to the second identification block, the method includes: obtaining a target identification spacing, the target identification spacing is the identification spacing of the mask to be tested, the identification spacing includes a first spacing and a second spacing, the first spacing is the minimum distance between the third identification block and the first identification block, and the second spacing is the minimum distance between the fourth identification block and the second identification block; determining a target graphic offset according to the target identification spacing, the target graphic offset is the graphic offset of the mask to be tested, and the graphic offset is the difference between the actual position and the designed position of the effective area.

[0007] Optionally, determining the target graphic offset according to the target identification spacing includes: obtaining a functional relationship between the graphic offset and the identification spacing; and determining the target graphic offset according to the functional relationship and the target identification spacing.

[0008] Optionally, obtaining the functional relationship between the graphic offset and the marker spacing includes: obtaining a first data set, the first data set including a plurality of the graphic offsets and a corresponding plurality of the marker spacings; constructing an initial functional relationship formula, the initial functional relationship formula including unknown parameters; determining the unknown parameters based on the first data set to obtain the functional relationship.

[0009] Optionally, determining the target graphic offset based on the target identification spacing includes: obtaining a neural network model; and using the neural network model to analyze the target identification spacing to determine the target graphic offset.

[0010] Optionally, obtaining a neural network model includes: establishing an initial neural network model; obtaining a second data set, wherein the second data set includes a plurality of the graphic offsets and a corresponding plurality of the identification spacings; and using the second data set to train the initial neural network model to obtain the neural network model.

[0011] According to another aspect of an embodiment of the present invention, a device for determining the graphic accuracy of a mask is provided, wherein the mask is composed of an effective area and a coordinate identification area, the coordinate identification area including a first coordinate identification and a second coordinate identification, the first coordinate identification including a first identification block and a second identification block that are perpendicular to each other, the second coordinate identification including a third identification block and a fourth identification block, the third identification block being parallel to the first identification block, and the fourth identification block being parallel to the second identification block, the device including an acquisition unit and a determination unit, wherein the acquisition unit is configured to acquire a target identification spacing, the target identification spacing being the identification spacing of the mask to be tested, the identification spacing including a first spacing and a second spacing, the first spacing being the minimum distance between the third identification block and the first identification block, and the second spacing being the minimum distance between the fourth identification block and the second identification block; and the determination unit is configured to determine a target graphic offset based on the target identification spacing, the target graphic offset being the graphic offset of the mask to be tested, and the graphic offset being the difference between the actual position and the designed position of the effective area.

[0012] Optionally, the determination unit includes a first acquisition module and a determination module, wherein the first acquisition module is used to obtain the functional relationship between the graphic offset and the marker spacing; the determination module is used to determine the target graphic offset based on the functional relationship and the target marker spacing.

[0013] According to another aspect of an embodiment of the present invention, a computer-readable storage medium is further provided, wherein the computer-readable storage medium includes a stored program, wherein the program executes any one of the methods described above.

[0014] According to yet another aspect of the embodiments of the present invention, a processor is provided, wherein the processor is configured to run a program, wherein any one of the methods is executed when the program is run.

[0015] According to another aspect of an embodiment of the present invention, an electronic device is also provided, comprising: one or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, and the one or more programs include methods for executing any one of the methods described.

[0016] According to the technical solution of an embodiment of the present invention, in the method for determining the pattern accuracy of a reticle, a reticle to be tested includes a first coordinate identifier and a second coordinate identifier, wherein the first identifier block in the first coordinate identifier is perpendicular to the second identifier block; the third identifier block in the second coordinate identifier is parallel to the first identifier block, and the fourth identifier block in the second coordinate identifier is parallel to the second identifier block. The method first obtains a first spacing and a second spacing of the reticle to be tested, wherein the first spacing is the spacing between the third identifier block and the first identifier block, and the second spacing is the spacing between the fourth identifier block and the second identifier block; then, the pattern offset of the reticle to be tested is determined based on the spacing. The method of the present application designs the first coordinate identifier and the second coordinate identifier on the reticle, and then determines the pattern offset based on the spacing data between the first coordinate identifier and the second coordinate identifier. The spacing data can be obtained using any feasible measurement equipment in the prior art. In this way, the pattern accuracy of the reticle to be tested can be determined without relying on IPRO equipment and its internal algorithm, solving the problem of the prior art that the measurement of the pattern accuracy of the reticle relies on high-cost measurement equipment, ensuring low cost for monitoring the pattern accuracy of the reticle. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The drawings that constitute part of this application are used to provide a further understanding of this application. The illustrative embodiments of this application and their descriptions are used to explain this application and do not constitute an improper limitation on this application. In the drawings:

[0018] Figure 1 A schematic flow chart of a method for determining the pattern accuracy of a mask according to an embodiment of the present application is shown;

[0019] Figure 2 A schematic diagram showing a coordinate identification area according to an embodiment of the present application is shown;

[0020] Figure 3 A schematic diagram of a device for determining the pattern accuracy of a mask according to an embodiment of the present application is shown.

[0021] The above drawings include the following reference numerals:

[0022] 101, first identification block; 102, second identification block; 201, third identification block; 202, fourth identification block. DETAILED DESCRIPTION

[0023] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in this application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0024] In order to enable those skilled in the art to better understand the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of this application.

[0025] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described herein. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0026] It should be understood that when an element (such as a layer, film, region, or substrate) is described as being "on" another element, the element may be directly on the other element or intervening elements may be present. Moreover, in the specification and claims, when it is described that an element is "connected to" another element, the element may be "directly connected to" the other element or "connected to" the other element through a third element.

[0027] As mentioned in the background technology, in the prior art, the measurement of the graphic accuracy of the mask relies on high-cost measurement equipment, resulting in the problem of high measurement cost of the graphic accuracy. In order to solve the above problem, in a typical embodiment of the present application, a method for determining the graphic accuracy of the mask, a determination device, a computer-readable storage medium, a processor and an electronic device are provided.

[0028] According to an embodiment of the present application, a method for determining the pattern accuracy of a mask is provided.

[0029] Figure 1 FIG. 1 is a flow chart of a method for determining the pattern accuracy of a mask according to an embodiment of the present application. Figure 2As shown, the above-mentioned mask is composed of an effective area and a coordinate identification area. The above-mentioned coordinate identification area includes a first coordinate identification and a second coordinate identification. The above-mentioned first coordinate identification includes a first identification block 101 and a second identification block 102 that are perpendicular to each other. The above-mentioned second coordinate identification includes a third identification block 201 and a fourth identification block 202. The above-mentioned third identification block 201 is parallel to the above-mentioned first identification block 101, and the above-mentioned fourth identification block 202 is parallel to the above-mentioned second identification block 102. Figure 1 As shown, the method includes the following steps:

[0030] Step S101, obtaining a target marking spacing, where the target marking spacing is the marking spacing of the reticle to be tested, and the marking spacing includes a first spacing D1 and a second spacing D2, where the first spacing D1 is the minimum distance between the third marking block 201 and the first marking block 101, and the second spacing D2 is the minimum distance between the fourth marking block 202 and the second marking block 102;

[0031] Step S102 : determining a target pattern offset according to the target mark spacing, wherein the target pattern offset is the pattern offset of the mask to be tested, and the pattern offset is the difference between the actual position and the designed position of the effective area.

[0032] In the above-mentioned method for determining the pattern accuracy of a reticle, the reticle to be tested includes a first coordinate marker and a second coordinate marker, wherein the first marker block in the first coordinate marker is perpendicular to the second marker block; the third marker block in the second coordinate marker is parallel to the first marker block; and the fourth marker block in the second coordinate marker is parallel to the second marker block. The method first obtains a first spacing and a second spacing of the reticle to be tested, wherein the first spacing is the spacing between the third marker block and the first marker block, and the second spacing is the spacing between the fourth marker block and the second marker block; and then determines the pattern offset of the reticle to be tested based on the spacing. The above-mentioned method of the present application designs the first coordinate marker and the second coordinate marker on the reticle, and then determines the pattern offset based on the spacing data between the first coordinate marker and the second coordinate marker. The spacing data can be obtained using any feasible measurement equipment in the prior art. In this way, the pattern accuracy of the reticle to be tested can be determined without relying on IPRO equipment and its internal algorithm, solving the problem of the prior art that the measurement of the pattern accuracy of the reticle relies on high-cost measurement equipment, ensuring low cost for monitoring the pattern accuracy of the reticle.

[0033] It should be noted that the first marker block is parallel to the Y direction, and the second marker block is parallel to the X direction. The above method maps the offset of the effective pattern area of ​​the reticle in the X direction using the first spacing between the third marker block and the first marker block, and maps the offset of the effective pattern area in the Y direction using the second spacing between the fourth marker block and the second marker block.

[0034] In a specific embodiment, the first coordinate identifier and the second coordinate identifier may be formed as follows: Figure 2 The cross shape shown, of course, the shape formed by the first coordinate mark and the second coordinate mark is not limited to the above shape, it can also be L-shaped or T-shaped or other shapes, and the first coordinate mark and the second coordinate mark can also have no common points (i.e., no intersection). The third coordinate mark and the fourth coordinate mark can form a cross shape, can also form an L shape or a T shape, or can also be as shown. Figure 2 As shown, the third coordinate identifier and the fourth coordinate identifier have no common point and do not intersect. In addition, the number of the first coordinate identifier and the number of the second coordinate identifier can be one or more.

[0035] To further ensure the accuracy of the obtained reticle pattern offset, in another specific embodiment of the present application, one first coordinate identifier corresponds to multiple second coordinate identifiers, the minimum distance between each third identifier block and the first identifier block is the same, and the minimum distance between each fourth identifier block and the second identifier block is the same. By obtaining multiple first spacings and multiple second spacings, and then determining the reticle pattern offset based on the multiple spacing data, the obtained pattern offset data can be further ensured to be relatively accurate.

[0036] According to a specific embodiment of the present application, determining a target pattern offset based on the target marker spacing includes: obtaining a functional relationship between the pattern offset and the marker spacing; and determining the target pattern offset based on the functional relationship and the target marker spacing. This further avoids reliance on costly pattern accuracy determination equipment, such as IPRO equipment, and further ensures low costs for determining reticle pattern accuracy.

[0037] According to another specific embodiment of the present application, obtaining the functional relationship between the graphic offset and the marker spacing includes: obtaining a first data set, the first data set including a plurality of graphic offsets and a corresponding plurality of marker spacings; constructing an initial functional relationship equation, the initial functional relationship equation including unknown parameters; and determining the unknown parameters based on the first data set to obtain the functional relationship. This method allows for obtaining the functional relationship more simply and quickly.

[0038] Specifically, obtaining the functional relationship between the graphic offset and the marker spacing may also include: obtaining a first data set, the first data set including a plurality of graphic offsets and corresponding plurality of marker spacings; fitting the first data set to obtain the functional relationship.

[0039] Of course, the method for determining the target pattern offset based on the target mark spacing is not limited to the above method. Those skilled in the art can flexibly select an appropriate method to obtain the target pattern offset based on actual circumstances. In another specific embodiment of the present application, determining the target pattern offset based on the target mark spacing includes: obtaining a neural network model; and using the neural network model to analyze the target mark spacing to determine the target pattern offset. This further ensures a relatively simple and efficient determination of the reticle pattern accuracy.

[0040] To further ensure a more accurate graphic offset, according to another specific embodiment of the present application, obtaining a neural network model includes: establishing an initial neural network model; obtaining a second data set, the second data set including a plurality of the graphic offsets and a corresponding plurality of the marker spacings; and training the initial neural network model using the second data set to obtain the neural network model. This allows for the establishment of a more accurate neural network model, thereby further ensuring that subsequent analysis of the graphic offsets obtained using the neural network model is more accurate.

[0041] In actual application, the process of forming the above-mentioned mask is as follows: providing a preliminary mask, which includes a glass substrate, a chromium layer and a photoresist layer stacked in sequence; drawing a mask layout file; using a photolithography machine to read the above-mentioned mask layout file and expose the above-mentioned photoresist; after development and fixing, part of the above-mentioned chromium layer is exposed; removing the exposed above-mentioned chromium layer, and then removing the remaining above-mentioned photoresist layer to obtain the above-mentioned mask.

[0042] In order to avoid measurement errors caused by edge roughness of each coordinate marking block in the coordinate marking area, dry etching is used to remove the exposed chromium layer, which can further ensure that the subsequent pattern offset test results are more accurate.

[0043] It should be noted that the steps shown in the flowcharts of the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions, and that, although a logical order is shown in the flowcharts, in some cases, the steps shown or described can be executed in an order different from that shown here.

[0044] The present application also provides a device for determining the pattern accuracy of a reticle. It should be noted that the device for determining the pattern accuracy of a reticle provided in the present application can be used to execute the method for determining the pattern accuracy of a reticle provided in the present application. The following describes the device for determining the pattern accuracy of a reticle provided in the present application.

[0045] Figure 3 Schematic diagram of a device for determining the pattern accuracy of a mask according to an embodiment of the present application. Figure 2 As shown, the above-mentioned mask is composed of an effective area and a coordinate identification area. The above-mentioned coordinate identification area includes a first coordinate identification and a second coordinate identification. The above-mentioned first coordinate identification includes a first identification block 101 and a second identification block 102 that are perpendicular to each other. The above-mentioned second coordinate identification includes a third identification block 201 and a fourth identification block 202. The above-mentioned third identification block 201 is parallel to the above-mentioned first identification block 101, and the above-mentioned fourth identification block 202 is parallel to the above-mentioned second identification block 102. Figure 3 As shown, the device includes an acquisition unit 10 and a determination unit 20, wherein the acquisition unit 10 is used to acquire a target identification spacing, the target identification spacing is the identification spacing of the mask to be tested, the identification spacing includes a first spacing D1 and a second spacing D2, the first spacing D1 is the minimum distance between the third identification block 201 and the first identification block 101, and the second spacing D2 is the minimum distance between the fourth identification block 202 and the second identification block 102; the determination unit is used to determine a target pattern offset according to the target identification spacing, the target pattern offset is the pattern offset of the mask to be tested, and the pattern offset is the difference between the actual position and the design position of the effective area.

[0046] In the above-mentioned device for determining the pattern accuracy of a reticle, the reticle to be tested includes a first coordinate marker and a second coordinate marker, wherein the first marker block in the first coordinate marker is perpendicular to the second marker block; the third marker block in the second coordinate marker is parallel to the first marker block, and the fourth marker block in the second coordinate marker is parallel to the second marker block. The device first obtains a first spacing and a second spacing of the reticle to be tested, wherein the first spacing is the spacing between the third marker block and the first marker block, and the second spacing is the spacing between the fourth marker block and the second marker block; and then determines the pattern offset of the reticle to be tested based on the spacing. The above-mentioned device of the present application designs the first coordinate marker and the second coordinate marker on the reticle, and then determines the pattern offset based on the spacing data between the first coordinate marker and the second coordinate marker. The spacing data can be obtained using any feasible measurement equipment in the prior art. In this way, the pattern accuracy of the reticle to be tested can be determined without relying on IPRO equipment and its internal algorithm, solving the problem of the prior art that the measurement of the pattern accuracy of the reticle depends on high-cost measurement equipment, ensuring low cost of monitoring the pattern accuracy of the reticle.

[0047] In a specific embodiment, the first coordinate identifier and the second coordinate identifier may be formed as follows: Figure 2 The cross shape shown, of course, the shape formed by the first coordinate mark and the second coordinate mark is not limited to the above shape, it can also be L-shaped or T-shaped or other shapes, and the first coordinate mark and the second coordinate mark can also have no common points (i.e., no intersection). The third coordinate mark and the fourth coordinate mark can form a cross shape, can also form an L shape or a T shape, or can also be as shown. Figure 2 As shown, the third coordinate identifier and the fourth coordinate identifier have no common point and do not intersect. In addition, the number of the first coordinate identifier and the number of the second coordinate identifier can be one or more.

[0048] To further ensure the accuracy of the obtained reticle pattern offset, in another specific embodiment of the present application, one first coordinate identifier corresponds to multiple second coordinate identifiers, the minimum distance between each third identifier block and the first identifier block is the same, and the minimum distance between each fourth identifier block and the second identifier block is the same. By obtaining multiple first spacings and multiple second spacings, and then determining the reticle pattern offset based on the multiple spacing data, the obtained pattern offset data can be further ensured to be relatively accurate.

[0049] According to a specific embodiment of the present application, the determination unit includes a first acquisition module and a determination module. The first acquisition module is configured to obtain a functional relationship between the pattern offset and the marker spacing; the determination module is configured to determine the target pattern offset based on the functional relationship and the target marker spacing. This further avoids reliance on costly pattern accuracy determination equipment such as IPRO equipment, further ensuring a low cost for determining the pattern accuracy of the reticle.

[0050] According to another specific embodiment of the present application, the first acquisition module includes a first acquisition submodule, a construction submodule, and a determination submodule. The first acquisition submodule is used to acquire a first data set, wherein the first data set includes multiple graphic offsets and corresponding multiple marker spacings; the construction submodule is used to construct an initial functional relationship, wherein the initial functional relationship includes unknown parameters; and the determination submodule is used to determine the unknown parameters based on the first data set to obtain the functional relationship. This allows the functional relationship to be obtained more simply and quickly.

[0051] Specifically, the above-mentioned first acquisition module can also include a first acquisition sub-module and a fitting sub-module, wherein the above-mentioned first acquisition sub-module is used to acquire the first data set, and the above-mentioned first data set includes multiple above-mentioned graphic offsets and corresponding multiple above-mentioned identification spacings; the above-mentioned fitting sub-module is used to fit the above-mentioned first data set to obtain the above-mentioned functional relationship.

[0052] Of course, the device for determining the target pattern offset based on the target mark spacing is not limited to the above-described device. Those skilled in the art can flexibly select an appropriate device to obtain the target pattern offset based on actual circumstances. In another specific embodiment of the present application, the determination unit includes a second acquisition module and an analysis module, wherein the second acquisition module is used to acquire a neural network model; and the analysis module is used to analyze the target mark spacing using the neural network model to determine the target pattern offset. This further ensures a relatively simple and efficient determination of the mask pattern accuracy.

[0053] In order to further ensure that a relatively accurate graphic offset is obtained, according to another specific embodiment of the present application, the second acquisition module includes an establishment submodule, a second acquisition submodule, and a training submodule, wherein the establishment submodule is used to establish an initial neural network model; the second acquisition submodule is used to obtain a second data set, and the second data set includes a plurality of the graphic offsets and a corresponding plurality of the marker spacings; the training submodule is used to train the initial neural network model using the second data set to obtain the neural network model. In this way, a relatively accurate neural network model can be established, thereby further ensuring that the graphic offset obtained by subsequent analysis based on the neural network model is relatively accurate.

[0054] In actual application, the process of forming the above-mentioned mask is as follows: providing a preliminary mask, which includes a glass substrate, a chromium layer and a photoresist layer stacked in sequence; drawing a mask layout file; using a photolithography machine to read the above-mentioned mask layout file and expose the above-mentioned photoresist; after development and fixing, part of the above-mentioned chromium layer is exposed; removing the exposed above-mentioned chromium layer, and then removing the remaining above-mentioned photoresist layer to obtain the above-mentioned mask.

[0055] In order to avoid measurement errors caused by edge roughness of each coordinate marking block in the coordinate marking area, dry etching is used to remove the exposed chromium layer, which can further ensure that the subsequent pattern offset test results are more accurate.

[0056] The device for determining the pattern accuracy of the mask includes a processor and a memory. The acquisition unit and the determination unit are stored in the memory as program units, and the processor executes the program units stored in the memory to implement corresponding functions.

[0057] The processor includes a core, which retrieves the corresponding program unit from memory. One or more cores can be configured, and adjusting the core parameters solves the problem of reticle pattern accuracy measurement relying on expensive measurement equipment, which results in high measurement costs.

[0058] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM, and the memory includes at least one memory chip.

[0059] An embodiment of the present invention provides a computer-readable storage medium having a program stored thereon. When the program is executed by a processor, the method for determining the pattern accuracy of the mask is implemented.

[0060] An embodiment of the present invention provides a processor, which is used to run a program, wherein the program executes the method for determining the graphic accuracy of the mask when running.

[0061] An embodiment of the present invention provides a device, comprising a processor, a memory, and a program stored in the memory and executable on the processor. When the processor executes the program, at least the following steps are performed:

[0062] Step S101, obtaining a target marking spacing, where the target marking spacing is the marking spacing of the reticle to be tested, and the marking spacing includes a first spacing and a second spacing, where the first spacing is the minimum distance between the third marking block and the first marking block, and the second spacing is the minimum distance between the fourth marking block and the second marking block;

[0063] Step S102 : determining a target pattern offset according to the target mark spacing, wherein the target pattern offset is the pattern offset of the mask to be tested, and the pattern offset is the difference between the actual position and the designed position of the effective area.

[0064] The devices in this article can be servers, PCs, PADs, mobile phones, etc.

[0065] The present application also provides a computer program product, which, when executed on a data processing device, is adapted to execute a program for initializing at least the following method steps:

[0066] Step S101, obtaining a target marking spacing, where the target marking spacing is the marking spacing of the reticle to be tested, and the marking spacing includes a first spacing and a second spacing, where the first spacing is the minimum distance between the third marking block and the first marking block, and the second spacing is the minimum distance between the fourth marking block and the second marking block;

[0067] Step S102 : determining a target pattern offset according to the target mark spacing, wherein the target pattern offset is the pattern offset of the mask to be tested, and the pattern offset is the difference between the actual position and the designed position of the effective area.

[0068] In the above embodiments of the present invention, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0069] In the several embodiments provided in this application, it should be understood that the disclosed technical content can be implemented in other ways. Among them, the device embodiments described above are only exemplary. For example, the division of the above-mentioned units can be a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of units or modules, which can be electrical or other forms.

[0070] The units described above as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple units. Some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.

[0071] In addition, the functional units in the various embodiments of the present invention may be integrated into a single processing unit, each unit may exist physically separately, or two or more units may be integrated into a single unit. The aforementioned integrated units may be implemented in the form of hardware or software functional units.

[0072] If the above-mentioned integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, server or network device, etc.) to execute all or part of the steps of the above-mentioned methods of each embodiment of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk or an optical disk.

[0073] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0074] 1) In the method for determining the pattern accuracy of a reticle described above in the present application, the reticle to be tested includes a first coordinate marker and a second coordinate marker, wherein the first marker block in the first coordinate marker is perpendicular to the second marker block; the third marker block in the second coordinate marker is parallel to the first marker block, and the fourth marker block in the second coordinate marker is parallel to the second marker block. The method first obtains a first spacing and a second spacing of the reticle to be tested, wherein the first spacing is the spacing between the third marker block and the first marker block, and the second spacing is the spacing between the fourth marker block and the second marker block; then, the pattern offset of the reticle to be tested is determined based on the spacings. The method described above in the present application designs the first coordinate marker and the second coordinate marker on the reticle, and then determines the pattern offset based on the spacing data between the first coordinate marker and the second coordinate marker. The spacing data can be obtained using any feasible measurement equipment in the prior art. In this way, the pattern accuracy of the reticle to be tested can be determined without relying on IPRO equipment and its internal algorithm, solving the problem of the prior art that the measurement of the pattern accuracy of the reticle relies on high-cost measurement equipment, ensuring low cost for monitoring the pattern accuracy of the reticle.

[0075] 2) In the device for determining the graphic accuracy of the mask mentioned above in the present application, the mask to be tested includes a first coordinate identifier and a second coordinate identifier, in the first coordinate identifier, the first identifier block is perpendicular to the second identifier block; the third identifier block in the second coordinate identifier is parallel to the first identifier block, and the fourth identifier block in the second coordinate identifier is parallel to the second identifier block. The device first obtains the first spacing and the second spacing of the mask to be tested, wherein the first spacing is the spacing between the third identifier block and the first identifier block, and the second spacing is the spacing between the fourth identifier block and the second identifier block; then, the graphic offset of the mask to be tested is determined according to the above spacings. The above-mentioned device of the present application designs a first coordinate mark and a second coordinate mark on the mask, and then determines the graphic offset based on the spacing data between the first coordinate mark and the second coordinate mark. The above-mentioned spacing data can be obtained using any feasible measurement equipment in the existing technology. In this way, there is no need to rely on the IPRO equipment and its internal algorithm to determine the graphic accuracy of the mask to be measured, which solves the problem in the existing technology that the measurement of the graphic accuracy of the mask depends on high-cost measurement equipment, and ensures that the monitoring cost of the graphic accuracy of the mask is low.

[0076] The foregoing description is merely a preferred embodiment of the present application and is not intended to limit the present application. Persons skilled in the art will readily appreciate that various modifications and variations are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A method for determining the pattern accuracy of a mask, characterized in that: The reticle is composed of an effective area and a coordinate identification area, the coordinate identification area includes a first coordinate identification and a second coordinate identification, the first coordinate identification includes a first identification block and a second identification block that are perpendicular to each other, the second coordinate identification includes a third identification block and a fourth identification block, the third identification block is parallel to the first identification block, and the fourth identification block is parallel to the second identification block, and the method includes: Obtaining a target identification spacing, where the target identification spacing is the identification spacing of the reticle to be tested, and the identification spacing includes a first spacing and a second spacing, where the first spacing is the minimum distance between the third identification block and the first identification block, and the second spacing is the minimum distance between the fourth identification block and the second identification block; According to the target identification spacing, the target pattern offset is determined, the target pattern offset is the pattern offset of the mask to be tested, and the pattern offset is the difference between the actual position and the designed position of the effective area. The method is not applied to IPRO equipment. Determining the target graphic offset according to the target identification spacing includes: obtaining a functional relationship between the graphic offset and the identification spacing; determining the target graphic offset according to the functional relationship and the target identification spacing, Alternatively, determining the target graphic offset based on the target identification spacing includes: obtaining a neural network model; and using the neural network model to analyze the target identification spacing to determine the target graphic offset.

2. The method according to claim 1, characterized in that Obtaining a functional relationship between the graphic offset and the marker spacing includes: Acquire a first data set, the first data set including a plurality of the graphic offsets and a corresponding plurality of the marker spacings; Constructing an initial functional relationship, wherein the initial functional relationship includes unknown parameters; The unknown parameters are determined based on the first data set to obtain the functional relationship.

3. The method according to claim 1, characterized in that Get the neural network model, including: Establish an initial neural network model; Acquire a second data set, the second data set including a plurality of the graphic offsets and a corresponding plurality of the marker spacings; The initial neural network model is trained using the second data set to obtain the neural network model.

4. A device for determining the pattern accuracy of a mask, characterized in that: The mask is composed of an effective area and a coordinate identification area, the coordinate identification area includes a first coordinate identification and a second coordinate identification, the first coordinate identification includes a first identification block and a second identification block that are perpendicular to each other, the second coordinate identification includes a third identification block and a fourth identification block, the third identification block is parallel to the first identification block, and the fourth identification block is parallel to the second identification block, and the device includes: an acquiring unit, configured to acquire a target identification spacing, wherein the target identification spacing is the identification spacing of the reticle to be tested, the identification spacing including a first spacing and a second spacing, the first spacing being the minimum distance between the third identification block and the first identification block, and the second spacing being the minimum distance between the fourth identification block and the second identification block; A determination unit is configured to determine a target pattern offset according to the target identification spacing, wherein the target pattern offset is the pattern offset of the mask to be tested, and the pattern offset is the difference between the actual position and the designed position of the effective area. The device should not be used for IPRO equipment, The determining unit includes: A first acquisition module is used to obtain a functional relationship between the graphic offset and the marker spacing; A determination module is used to determine the target graphic offset according to the functional relationship and the target identification distance, Alternatively, the determining unit includes: The second acquisition module is used to obtain the neural network model; An analysis module is used to analyze the target identification distance using the neural network model to determine the target graphic offset.

5. A computer-readable storage medium, characterized in that The computer-readable storage medium includes a stored program, wherein the program executes the method according to any one of claims 1 to 3.

6. A processor, characterized in that: The processor is configured to run a program, wherein the program executes the method according to any one of claims 1 to 3 when running.

7. An electronic device, characterized in that: include: One or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, and the one or more programs include instructions for executing the method according to any one of claims 1 to 3.

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