Ion source device, control method thereof, ion implantation equipment, and storage medium

Abstract

The present disclosure provides an ion source device, a control method thereof, an ion implantation device, and a storage medium. The ion source device includes a chamber, a discharge member, a gas introduction member, an electric field generation member, a power supply, a detection member, and a control unit. The discharge member is configured to generate electrons after an electrical signal is applied. The gas introduction member is configured to introduce gas into the chamber to collide with the electrons to generate an ion beam. The electric field generation member is configured to generate an electric field in the chamber to assist in deflecting the electrons so that the electrons move towards the gas source inlet. The power supply is configured to provide a positive voltage to the electric field generation member. The detection member is connected to the ion beam outlet and is configured to collect real-time characterization parameters of the ion beam when the power supply varies between a first voltage value and a second voltage value. The control unit is configured to determine a maximum characterization parameter value according to the real-time characterization parameters and adjust the output voltage of the power supply according to the maximum characterization parameter value to provide an optimal voltage to the electric field generation member. The present disclosure improves gas utilization efficiency and ionization efficiency.

Description

Technical Field

[0001] The present disclosure relates to the field of wafer processing technology, and more particularly, to an ion source device, a control method thereof, an ion implantation apparatus, and a storage medium. Background Art

[0002] Most ion implantation apparatuses include an ion source device, a guiding device, and a vacuum chamber. The ion source device is used to generate an ion beam to be implanted. The vacuum chamber is used to maintain a vacuum environment and place the wafer to be processed. The guiding device is used to guide and accelerate the ion beam generated by the ion source device into the wafer.

[0003] In existing ion source devices, the generation of the ion beam is achieved by using electrons to strike a gas source injected into a vacuum reaction chamber to ionize it. In this process, the gas source cannot stay in the vacuum reaction chamber all the time, but will diffuse out, resulting in most of the gas sources being wasted without participating in the reaction, and the gas utilization rate is low. Moreover, the collision between electrons and the gas source is non-directional, resulting in low ionization efficiency. For a large-current process, more gas sources are required, and a large amount of gas sources entering the vacuum reaction chamber will interfere with the conductivity of the vacuum reaction chamber, causing the ion beam to be unstable. Summary of the Invention

[0004] In view of this, in order to at least partially solve the above problems, the present disclosure provides an ion source device, a control method thereof, an ion implantation apparatus, and a storage medium, and the technical solutions are as follows.

[0005] The ion source device according to the present disclosure includes:

[0006] a chamber, on which a gas source inlet and an ion beam outlet are provided;

[0007] a discharge member, disposed in the chamber, for generating electrons after an electrical signal is applied;

[0008] a gas introduction member, for introducing gas into the chamber through the gas source inlet to collide with electrons to generate an ion beam;

[0009] an electric field generating member, disposed on the chamber, for generating an electric field in the chamber to assist the deflection of the electrons, so that the electrons move towards the gas source inlet;

[0010] a power supply, for providing a positive voltage to the electric field generating member;

[0011] a detection member, connected to the ion beam outlet, for collecting real-time characterization parameters of the ion beam when the power supply varies between a first voltage value and a second voltage value; and

[0012] A control unit, which is respectively connected to the power supply and the detection component, is configured to determine a maximum characterization parameter value according to the real-time characterization parameter, and adjust the output voltage of the power supply according to the maximum characterization parameter value to provide an optimal voltage to the electric field generating component.

[0013] In an implementable embodiment, the control unit includes:

[0014] A storage module, configured to store a correspondence table between the real-time characterization parameter and the voltage value of the power supply;

[0015] A query module, configured to query the correspondence table to find the voltage value corresponding to the maximum characterization parameter value so as to determine the output voltage value of the power supply; and

[0016] A control module, configured to control the output voltage of the power supply according to the output voltage value so that the power supply provides an optimal voltage to the electric field generating component.

[0017] In an implementable embodiment, the chamber includes a first wall and a second wall which are oppositely arranged, the first wall and the second wall are connected by a third wall, the gas source inlet is arranged on the first wall, the ion beam outlet is arranged on the second wall, and the discharge component penetrates through the third wall and extends into the chamber.

[0018] In an implementable embodiment, the electric field generating component is arranged on the first wall, a first insulating component is arranged between the electric field generating component and the first wall, the electric field generating component is connected to the positive electrode of the power supply, and the first wall is connected to the negative electrode of the power supply.

[0019] In an implementable embodiment, a through hole is arranged on the electric field generating component, the gas introducing component extends into the chamber through the through hole, and a second insulating component is arranged between the gas introducing component and the electric field generating component.

[0020] According to the ion source device control method of the present disclosure, which is applied to the ion source device as described above, the method includes the following steps:

[0021] When the power supply varies between a first voltage value and a second voltage value, collect a real-time characterization parameter characterizing the current state of the ion beam;

[0022] Determine a maximum characterization parameter value according to the real-time characterization parameter, and adjust the output voltage of the power supply according to the maximum characterization parameter value to provide an optimal voltage to the electric field generating component.

[0023] In an implementable embodiment, the real-time characterization parameter at least includes the current of the ion beam.

[0024] In one implementable embodiment, determining a maximum characterization parameter value according to the real-time characterization parameter and adjusting the output voltage of the power supply according to the maximum characterization parameter value to provide a preferred voltage to the electric field generating component includes:

[0025] Storing a correspondence table between the real-time characterization parameter and the voltage value of the power supply;

[0026] Querying the correspondence table to find the voltage value corresponding to the maximum characterization parameter value so as to determine the output voltage value of the power supply; and

[0027] Controlling the output voltage of the power supply according to the output voltage value so that the power supply provides a preferred voltage to the electric field generating component.

[0028] An ion implantation device according to the present disclosure includes an ion source device, a guiding device, and a process chamber. The ion source device is used to generate an ion beam to be implanted. The process chamber is used to maintain a vacuum environment and place a wafer to be processed. The guiding device is used to guide and accelerate the ion beam generated by the ion source device into the wafer. The ion source device is the ion source device as described above.

[0029] A storage medium according to the present disclosure stores a computer program, and the computer program is used to execute the ion source device control method as described above.

[0030] The present disclosure has the following beneficial effects: Based on the settings of the electric field generating component, the power supply, the detection component, and the control unit, when the power supply provides positive voltages of different magnitudes to the electric field generating component, the real-time characterization parameter representing the current state of the ion beam will be different, and this real-time characterization parameter is collected by the detection component and sent to the control unit, and the control unit will adjust the power supply according to this real-time characterization parameter so that the power supply provides a preferred voltage to the electric field generating component. In this way, not only does it make electrons gather towards the gas source inlet, greatly increasing the reaction efficiency of the gas, improving the gas utilization rate and ionization efficiency, and for large-current processes, there is no need for more gas sources, avoiding the conductivity interference of excessive gas sources on the vacuum reaction chamber and enhancing the stability of the ion beam; moreover, by adjusting the power supply through the control unit, it avoids premature deflection of electrons due to too strong an electric field and missed deflection of electrons from the gas source inlet due to too weak an electric field, ensuring that electrons gather towards the gas source inlet.

[0031] The following will, with reference to the accompanying drawings, elaborate on the advantages and features of the present disclosure in detail. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The following drawings of the present disclosure are hereby incorporated as part of the present disclosure for understanding the present disclosure. The embodiments and descriptions thereof of the present disclosure are shown in the drawings to explain the principles of the present disclosure. In the drawings,

[0033] Figure 1 Schematic structural diagram of an ion source device according to an exemplary embodiment of the present disclosure;

[0034] Figure 2 Block diagram of a control unit of a vacuum device according to an exemplary embodiment of the present disclosure;

[0035] Figure 3 Curve graph showing the correspondence between real-time characterization parameters and the voltage value of a power supply according to an exemplary embodiment of the present disclosure;

[0036] Figure 4 Flowchart of a vacuum device control method according to an embodiment of the present disclosure;

[0037] Figure 5 Schematic diagram of step S20 in a vacuum device control method according to an embodiment of the present disclosure;

[0038] Figure 6 Schematic structural diagram of an ion implantation device according to an embodiment of the present disclosure.

[0039] Explanation of reference numerals in the figure:

[0040] 10, chamber; 11, first wall; 12, second wall; 13, third wall; 101, gas source inlet; 102, ion beam outlet; 20, discharge element; 30, gas introduction element; 40, electric field generation element; 50, power supply; 60, detection element; 70, control unit; 71, storage module; 72, query module; 73, control module; 80, first insulating element; 90, second insulating element; 100, ion source device; 200, guiding device; 300, process chamber. Detailed implementation manners

[0041] In the following description, a large number of details are provided to enable a thorough understanding of the present disclosure. However, those skilled in the art can understand that the following description only exemplarily shows alternative embodiments of the present disclosure, and the present disclosure can be implemented without one or more such details. In addition, to avoid confusion with the present disclosure, some well-known technical features in the art are not described in detail.

[0042] According to a first aspect of the present disclosure, an ion source device is provided.

[0043] As shown in Figure 1 and Figure 2 , an ion source device 100 according to an embodiment of the present disclosure, which is used to generate and emit an ion beam, includes a chamber 10, a discharge element 20, a gas introduction element 30, an electric field generation element 40, a power supply 50, a detection element 60, and a control unit 70.

[0044] A gas source inlet 101 and an ion beam outlet 102 are provided on a chamber 10. Gas is introduced into the chamber 10 through a gas introduction member 30 from the gas source inlet 101, and the ion beam is emitted from the ion beam outlet 102. A discharge member 20 is disposed in the chamber 10 and is used to generate electrons after an electrical signal is applied. The gas introduction member 30 is used to introduce gas into the chamber 10 through the gas source inlet 101 to collide with electrons to generate an ion beam. The gas introduction member 30 can be a tubular member or a pipe joint connected to a hose. An electric field generating member 40 is disposed on the chamber 10 and is used to generate an electric field in the chamber 10 to assist in deflecting electrons so that the electrons move toward the gas source inlet 101 to collide with the gas to generate an ion beam. The electric field generating member 40 can be a plate-shaped member, and the thickness of the plate-shaped member is equal to the thickness of the chamber wall of the chamber 10. A power supply 50 is used to supply a positive voltage to the electric field generating member 40 so that the electric field generating member 40 generates a positive charge that attracts electrons, giving a direction to the originally disordered electrons and causing the electrons to gather in the direction of the gas source inlet 101. A detection member 60 is connected to the ion beam outlet 102 and is used to collect real-time characterization parameters of the ion beam when the power supply 50 varies between a first voltage value and a second voltage value. A control unit 70 is respectively connected to the power supply 50 and the detection member 60 and is used to determine a maximum characterization parameter value according to the real-time characterization parameters and adjust the output voltage of the power supply 50 according to the maximum characterization parameter value to supply an optimal voltage to the electric field generating member 40.

[0045] For the above ion source device 100, based on the settings of the electric field generating member 40, the power supply 50, the detection member 60, and the control unit 70, when the power supply 50 supplies positive voltages of different magnitudes to the electric field generating member 40, the real-time characterization parameters representing the current state of the ion beam will be different, and the real-time characterization parameters are collected by the detection member 60 and sent to the control unit 70. The control unit 70 will then determine a maximum characterization parameter value according to the real-time characterization parameters and adjust the power supply 50 according to the maximum characterization parameter value so that the power supply 50 supplies an optimal voltage to the electric field generating member 40. In this way, not only are electrons gathered toward the gas source inlet 101, greatly increasing the reaction efficiency of the gas, improving the gas utilization rate and the ionization efficiency, and for a large-current process, there is no need for more gas sources, avoiding the conductivity interference of excessive gas sources to the vacuum reaction chamber and enhancing the ion beam stability; moreover, by adjusting the power supply 50 through the control unit 70, it is avoided that the electric field is too large and the electrons are deflected in advance, or the electric field is too weak and the electrons are deflected past the gas source inlet 101, ensuring that the electrons gather toward the gas source inlet 101.

[0046] Refer again to Figure 2 , in an embodiment of the present disclosure, the control unit 70 includes a storage module 71, a query module 72, and a control module 73. The storage module 71 is used to store a correspondence table between the real-time characterization parameters and the voltage values of the power supply 50, as Figure 3 shown.Figure 3 When the voltage value of the power supply 50 varies between 0V and 200V, the curve of the real-time characterization parameter changing with the voltage value of the power supply 50 is shown. The query module 72 is used to query the correspondence table and find the voltage value corresponding to the maximum characterization parameter value to determine the output voltage value of the power supply 50. The control module 73 is used to control the output voltage of the power supply 50 according to the output voltage value, so that the power supply 50 provides an optimal voltage to the electric field generating member 40.

[0047] Referring to Figure 3 , for different gases or different discharge members 20, the control unit 70 can first make the power supply 50 vary between a first voltage value (such as 0V) and a second voltage value (such as 200V). During the variation process, the detector 60 collects the real-time characterization parameter of the ion beam (such as the ion beam current), and the storage module 71 stores the correspondence table between the real-time characterization parameter and the voltage value of the power supply 50. There must be a maximum characterization parameter value during this process, and the voltage value output by the power supply 50 corresponding to the maximum characterization parameter value is called the optimal bias power supply value, which is calibrated as E0. This E0 value can be used as the output voltage value of the power supply 50 to provide an optimal voltage to the electric field generating member 40. Based on this optimal voltage, it is easier to excite a large-current ion beam, thereby improving the ionization efficiency.

[0048] Referring again to Figure 1 , the chamber 10 includes a first wall 11 and a second wall 12 arranged oppositely, and the first wall 11 and the second wall 12 are connected by a third wall 13. The gas source inlet 101 is arranged on the first wall 11, and the ion beam outlet 102 is arranged on the second wall 12. The discharge member 20 passes through the third wall 13 and extends into the chamber 10. In this way, when the gas is introduced into the chamber 10 through the gas source inlet 101, the gas collides with the electrons generated by the discharge member 20 to generate an ion beam, and the ion beam is more likely to exit the chamber 10 through the ion beam outlet 102, reducing the loss of the ion beam. Here, the number of the discharge members 20 can be more than one, and can be two arranged oppositely, or even multiple, so as to meet the requirements of a large-current manufacturing process.

[0049] In an embodiment of the present disclosure, the electric field generating member 40 is arranged on the first wall 11, a first insulating member 80 is arranged between the electric field generating member 40 and the first wall 11, the electric field generating member 40 is connected to the positive electrode of the power supply 50, and the first wall 11 is connected to the negative electrode of the power supply 50. In this way, without changing the overall structure of the existing chamber 10, the gas utilization rate can be effectively improved by arranging the electric field generating member 40, and the first insulating member 80 can insulate the electric field generating member 40 from the chamber 10.

[0050] Further, a through hole (not marked in the figure) is provided on the electric field generating member 40. The gas introducing member 30 extends into the chamber 10 through the through hole, and a second insulating member 90 is provided between the gas introducing member 30 and the electric field generating member 40. Based on the setting of the second insulating member 90 and in combination with the setting of the first insulating member 80, the electric field generating member 40, the chamber 10, and the gas introducing member 30 can be insulated from each other, so that the electric field generating member 40 becomes an independent potential.

[0051] According to a second aspect of the present disclosure, a method for controlling an ion source device 100 is provided.

[0052] As Figure 4 shown, the method for controlling the ion source device 100 according to the present disclosure is applied to the ion source device 100 as described above, and the method includes the following steps:

[0053] S10: When the power supply 50 changes between a first voltage value and a second voltage value, collect real-time characterization parameters representing the current state of the ion beam;

[0054] S20: Determine a maximum characterization parameter value according to the real-time characterization parameters, and adjust the output voltage of the power supply 50 according to the maximum characterization parameter value to provide an optimal voltage to the electric field generating member 40.

[0055] In an embodiment of the present disclosure, the real-time characterization parameters at least include the current of the ion beam.

[0056] As Figure 5 shown, determining a maximum characterization parameter value according to the real-time characterization parameters and adjusting the output voltage of the power supply 50 according to the maximum characterization parameter value to provide an optimal voltage to the electric field generating member 40 includes:

[0057] S21: Store a correspondence table between the real-time characterization parameters and the voltage value of the power supply 50;

[0058] S22: Query the correspondence table to find the voltage value corresponding to the maximum characterization parameter value to determine the output voltage value of the power supply 50; and

[0059] S23: Control the output voltage of the power supply 50 according to the output voltage value so that the power supply 50 provides an optimal voltage to the electric field generating member 40.

[0060] Specifically, with reference to Figure 3 , first, the control unit 70 causes the power supply 50 to change between a first voltage value (such as 0V) and a second voltage value (such as 200V). During the change process, the detector 60 collects real-time characterization parameters of the ion beam (such as the ion beam current), and the storage module 71 stores a correspondence table between the real-time characterization parameters and the voltage value of the power supply 50. The correspondence table can be obtained through, for example, Figure 3The shown curve graph visually reflects that, as can be seen from the curve graph, the real-time characterization parameter has a maximum characterization parameter value (the maximum characterization parameter value corresponds to the highest point of the curve), and the voltage value of the power supply output corresponding to this maximum characterization parameter value is called the preferred bias power supply value. The preferred bias power supply value is calibrated as E0, and this E0 value can be used as the output voltage value of the power supply 50 to provide a preferred voltage to the electric field generating component 40.

[0061] According to the third aspect of the present disclosure, an ion implantation device is provided.

[0062] As Figure 6 shown, the ion implantation device of an embodiment of the present disclosure includes an ion source device 100, a guiding device 200, and a process chamber 300. The ion source device 100 is used to generate an implanted ion beam. The process chamber 300 is used to maintain a vacuum environment and place the wafer to be processed. The guiding device 200 is used to guide and accelerate the ion beam generated by the ion source device 100 into the wafer. The ion source device 100 is the ion source device 100 as described above. The ion beam is emitted through the ion beam outlet 102, guided by the guiding device 200, and accelerated into the wafer.

[0063] According to the fourth aspect of the present disclosure, a storage medium is provided. The storage medium stores a computer program, and the computer program is used to execute the ion source device 100 control method as described above.

[0064] In several embodiments provided by the present disclosure, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are only illustrative. For example, multiple units or components can be combined, or can be integrated into another system, or some features can be ignored, or not executed. Additionally, the couplings, direct couplings, or communication connections between the various components shown or discussed can be through some interfaces. The indirect couplings or communication connections of devices or units can be electrical, mechanical, or other forms.

[0065] The units described above as separate components may or may not be physically separated. The components shown as units may or may not be physical units; they can be located in one place or distributed to multiple network units; some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0066] In addition, each functional unit in the embodiments of the present disclosure can all be integrated in one processing unit, or each unit can be separately used as one unit, or two or more units can be integrated in one unit; the above-mentioned integrated units can be implemented in the form of hardware, or in the form of a combination of hardware and software functional units.

[0067] Alternatively, if the above-mentioned integrated units of the present disclosure are implemented in the form of software function modules and sold or used as independent products, they can also be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the embodiments of the present disclosure, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the methods of the various embodiments of the present disclosure. The aforementioned storage medium includes: various media such as removable storage devices, ROMs, magnetic disks, or optical discs that can store program codes.

[0068] In the description of this specification, the descriptions referring to terms such as "one embodiment", "some embodiments", "examples", "specific examples", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0069] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present invention, "a plurality of" means two or more, unless otherwise specifically defined.

[0070] It should be understood that various forms of the processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in the present disclosure can be executed in parallel, sequentially, or in different orders, as long as the desired results of the technical solution of the present disclosure can be achieved, and no limitation is imposed herein.

[0071] As mentioned above, the above are only the specific implementation manners of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present disclosure can easily think of changes or substitutions, which should all be covered by the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claimed rights.

Claims

1. An ion source device, characterized in that, Comprising: A chamber (10) provided with a gas source inlet (101) and an ion beam outlet (102); A discharge element (20) disposed within the chamber (10) for generating electrons after an electrical signal is applied; A gas introduction element (30) for introducing gas into the chamber (10) through the gas source inlet (101) to collide with electrons to generate an ion beam; An electric field generation element (40) disposed on the chamber (10) for generating an electric field in the chamber (10) to assist in deflecting the electrons so that the electrons move towards the gas source inlet (101); A power supply (50) for supplying a positive voltage to the electric field generation element (40); A detection element (60) connected to the ion beam outlet (102) for collecting real-time characterization parameters of the ion beam when the power supply (50) varies between a first voltage value and a second voltage value; And A control unit (70) respectively connected to the power supply (50) and the detection element (60) for determining a maximum characterization parameter value according to the real-time characterization parameters and adjusting the output voltage of the power supply (50) according to the maximum characterization parameter value to provide an optimal voltage to the electric field generation element (40); The chamber (10) includes a first wall (11) and a second wall (12) arranged oppositely, and the first wall (11) and the second wall (12) are connected by a third wall (13). The gas source inlet (101) is provided on the first wall (11), the ion beam outlet (102) is provided on the second wall (12), and the discharge element (20) extends into the chamber (10) through the third wall (13). The electric field generation element (40) is provided on the first wall (11), and a first insulating element (80) is provided between the electric field generation element (40) and the first wall (11). The electric field generation element (40) is connected to the positive pole of the power supply (50), and the first wall (11) is connected to the negative pole of the power supply (50). The electric field generation element (40) is provided with a through hole, and the gas introduction element (30) extends into the chamber (10) through the through hole, and a second insulating element (90) is provided between the gas introduction element (30) and the electric field generation element (40). The electric field generation element (40) is a plate-shaped element, and the thickness of the plate-shaped element is equal to the thickness of the chamber wall of the chamber (10).

2. The ion source device according to claim 1, characterized in that, The control unit (70) includes: A storage module (71) for storing a correspondence table between real-time characterization parameters and the voltage value of the power supply (50); A query module (72) for querying the correspondence table to find the voltage value corresponding to the maximum characterization parameter value to determine the output voltage value of the power supply (50); and A control module (73) for controlling the output voltage of the power supply (50) according to the output voltage value so that the power supply (50) provides an optimal voltage to the electric field generation element (40).

3. A method for controlling an ion source device, characterized in that, Applied to the ion source device as described in claim 1 or 2, the method includes the following steps: when the power supply (50) varies between a first voltage value and a second voltage value, collect real-time characterization parameters characterizing the current state of the ion beam; Determine a maximum characterization parameter value according to the real-time characterization parameters, and adjust the output voltage of the power supply (50) according to the maximum characterization parameter value to provide an optimal voltage to the electric field generating element (40).

4. The ion source device control method according to claim 3, characterized in that, The real-time characterization parameters at least include the current of the ion beam.

5. The ion source device control method according to claim 4, wherein Determine a maximum characterization parameter value according to the real-time characterization parameters, and adjust the output voltage of the power supply (50) according to the maximum characterization parameter value to provide an optimal voltage to the electric field generating element (40), including: Store a correspondence table between the real-time characterization parameters and the voltage values of the power supply (50); Query the correspondence table to find the voltage value corresponding to the maximum characterization parameter value to determine the output voltage value of the power supply (50); and Control the output voltage of the power supply (50) according to the output voltage value so that the power supply (50) provides an optimal voltage to the electric field generating element (40).

6. An ion implantation device, characterized in that, Including an ion source device (100), a guiding device (200) and a process chamber (300), the ion source device (100) is used to generate an implanted ion beam, the process chamber (300) is used to maintain a vacuum environment and place a wafer to be processed, and the guiding device (200) is used to guide and accelerate the ion beam generated by the ion source device into the wafer, and the ion source device is the ion source device as described in claim 1 or 2.

7. A storage medium, characterized in that, The storage medium stores a computer program, and the computer program is used to execute the ion source device control method as described in any one of claims 3-5.

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