Mask pattern processing method, device, apparatus, and storage medium
By cutting out the area to be cut from the diagonal pattern of the point contact angle in the mask pattern, the MRC condition is satisfied, which solves the pinch-off and corner rounding problems after OPC correction, and improves product yield and structural consistency of fin field-effect transistors.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER CO LTD
- Filing Date
- 2022-12-22
- Publication Date
- 2026-06-23
Smart Images
Figure CN115829998B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and in particular to a method, apparatus, device and storage medium for processing mask patterns. Background Technology
[0002] Optical proximity correction (OPC) is a technique that adjusts the topology of the light-transmitting region pattern on a photomask, or adds small sub-resolution auxiliary patterns to the mask, to make the imaging result in the photoresist as close as possible to the mask pattern. As integrated circuit manufacturing processes advance to more advanced nodes, many point-touch corner-to-corner patterns inevitably exist. These patterns need to be specially processed beforehand; otherwise, the OPC results will be unusable.
[0003] In existing technologies, the point-touch corner-to-corner pattern is usually expanded outward, that is, the point-touch corner-to-corner pattern in the mask is enlarged.
[0004] However, even after OPC correction, this outward expansion method still suffers from severe corner rounding, which can easily lead to a decrease in product yield. Summary of the Invention
[0005] This application provides a method, apparatus, device, and storage medium for processing mask patterns, which solves the problem that existing mask processing methods have poor processing effects, leading to a decrease in product yield.
[0006] In a first aspect, embodiments of this application provide a method for processing a mask pattern, comprising:
[0007] A point contact angle diagonal pattern is determined in the original mask pattern, and the point contact angle diagonal pattern intersects with the first pattern and the second pattern in the original mask pattern respectively;
[0008] The area to be cut is determined based on the position of the diagonal shape of the contact angle.
[0009] The area to be clipped is removed from the original mask pattern to obtain the target mask pattern.
[0010] In one possible design of the first aspect, determining the area to be cut based on the diagonal position of the point contact angle includes:
[0011] Obtain the initial size and construct the initial region centered on the diagonal position of the point contact angle;
[0012] Determine whether the initial region meets the preset conditions;
[0013] If the initial region meets the preset conditions, then the initial region is determined as the region to be cropped.
[0014] In another possible design of the first aspect, if the initial region does not satisfy the preset condition, the method further includes:
[0015] The initial region is expanded;
[0016] Determine whether the expanded initial region meets the preset conditions;
[0017] If the expanded initial region meets the preset conditions, then the initial region is determined as the region to be cropped.
[0018] If the expanded initial region does not meet the preset conditions, the expanded initial region will continue to be expanded until the preset conditions are met.
[0019] In another possible design of the first aspect, determining whether the preset conditions are met includes:
[0020] The initial region or the enlarged initial region is removed from the original mask pattern to obtain the original mask pattern after removal;
[0021] Perform mask rule checks on the original mask pattern after removal to obtain the check results;
[0022] Based on the inspection results, determine whether the initial region or the expanded initial region meets the preset conditions.
[0023] In another possible design of the first aspect, determining the point contact angle diagonal pattern in the original mask pattern includes:
[0024] The corners of the first pattern and the corners of the second pattern are determined in the original mask pattern;
[0025] Determine whether the corners of the first pattern and the corners of the second pattern intersect;
[0026] If the corner of the first pattern intersects with the corner of the second pattern, then the intersection point is obtained;
[0027] Based on the intersection points, the diagonal shape of the point contact angle is determined.
[0028] In another possible design of the first aspect, if the corner points of the first pattern do not intersect with the corner points of the second pattern, the method further includes:
[0029] Determine whether the distance between the corner of the first pattern and the corner of the second pattern meets a preset threshold.
[0030] If the distance between the corner of the first pattern and the corner of the second pattern meets a preset threshold, then the point contact angle diagonal pattern is determined based on the corner of the first pattern and the corner of the second pattern.
[0031] In another possible design of the first aspect, removing the region to be clipped from the original mask pattern to obtain the target mask pattern includes:
[0032] The area to be clipped is removed from the original mask pattern to obtain the clipped mask pattern;
[0033] The target mask pattern is obtained by performing optical proximity correction on the removed mask pattern.
[0034] Secondly, embodiments of this application provide a mask pattern processing apparatus, comprising:
[0035] The pattern determination module is used to determine the point contact angle diagonal pattern in the original mask pattern, wherein the point contact angle diagonal pattern intersects with the first pattern and the second pattern in the original mask pattern respectively;
[0036] The region determination module is used to determine the region to be cut based on the position of the point contact angle diagonal graphic.
[0037] The pattern acquisition module is used to remove the area to be cropped from the original mask pattern to obtain the target mask pattern.
[0038] Thirdly, embodiments of this application provide an electronic device, including: a processor, and a memory communicatively connected to the processor; the memory stores computer execution instructions; the processor executes the computer execution instructions stored in the memory to implement the method described above.
[0039] Fourthly, embodiments of this application provide a computer-readable storage medium storing computer instructions that, when executed by a processor, are used to implement the method described above.
[0040] Fifthly, embodiments of this application provide a computer program product, including computer instructions that, when executed by a processor, implement the above-described method.
[0041] The mask pattern processing method, apparatus, device, and storage medium provided in this application can solve the problem of point contact angle diagonal graphic structure violating MRC in the original mask pattern by cutting the original mask pattern without requiring additional space for graphic expansion. At the same time, it can effectively reduce the corner rounding phenomenon that occurs during OPC, thereby improving the processing effect of the mask pattern and increasing the product yield. Attached Figure Description
[0042] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application;
[0043] Figure 1 This is a schematic diagram of the current point contact angle diagonal graphic OPC process;
[0044] Figure 2 This is a schematic diagram of the OPC process after the current point contact angle diagonal shape is expanded outward;
[0045] Figure 3 A schematic flowchart illustrating the mask pattern processing method provided in this application embodiment;
[0046] Figure 4 This is a schematic diagram of the structure of the diagonal pattern of the point contact angle provided in the embodiments of this application;
[0047] Figure 5 A schematic diagram of mask operations provided in an embodiment of this application;
[0048] Figure 6 This is a schematic diagram illustrating the removal of the area to be clipped provided in an embodiment of this application;
[0049] Figure 7 This is a schematic diagram of the target mask pattern after OPC correction provided in an embodiment of this application;
[0050] Figure 8 A schematic diagram of the structure of the mask pattern processing device provided for the implementation of this application;
[0051] Figure 9 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application.
[0052] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation
[0053] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0054] First, let me explain the terms used in this application:
[0055] Optical proximity correction (OPC) is a technique that adjusts the topological structure of the light-transmitting area pattern on a photomask, or adds small sub-resolution auxiliary patterns to the mask, so that the imaging result in the photoresist is as close as possible to the mask pattern.
[0056] Mask rule check (MRC) refers to the check that must be performed on the design graphic after it has undergone optical proximity correction processing and before it is sent to the mask manufacturing plant.
[0057] Mask: A mask is a selected image, graphic, or object used to cover (all or part) of an image being processed, thereby controlling the area or process of image processing. The specific image or object used for covering is called a mask or template. In optical image processing, masks can be films, filters, etc.
[0058] In the semiconductor technology field, starting with the 180nm technology node, the minimum linewidth on the device began to be smaller than the exposure wavelength, making OPC (Optical Pattern Correction) indispensable and a key step in mask patterning. However, with the continuous advancement of technology nodes, many point-touch corner-to-corner patterns inevitably emerge. These patterns, due to violations of MRC (Mean Correction Control), require special processing; otherwise, the OPC results will be unusable. Specifically, because point-touch corner-to-corner patterns have a narrow structure, pinch-off phenomena may occur after OPC correction. For example... Figure 1 This is a schematic diagram of the current point-to-point contact angle diagonal graph OPC process, as shown below. Figure 1 As shown, the corners of figure 101 and figure 102 are relatively close, forming a point-to-angle diagonal figure (i.e., Figure 1 The area selected by the solid circle 100 (the region within the circle) may experience a pinch-off phenomenon after OPC correction due to the narrow structure of the diagonal figures at the point contact angle (the intersection of figures 101 and 102). (After OPC correction, such as...) Figure 1As shown, the dashed line has a break at the solid line circle (it's discontinuous), which renders the OPC-corrected result unusable. Currently, to avoid the pinch-off phenomenon, the structure is expanded outwards, but most results still violate MRC. A traditional solution is to use a script to set the graphic as a specific target for additional expansion; however, this method only applies to cases where there are no expansion restrictions on the graphic and introduces unnecessary corner rounding into the corrected graphic. For example, Figure 2 This is a schematic diagram of the OPC process after the current point contact angle diagonal shape expands outward, as shown below. Figure 2 As shown, after expanding the diagonal shape at the point of contact angle (i.e., adding two additional rectangular areas at the intersection of shapes 101 and 102), although the pinch-off phenomenon no longer occurs during OPC, the corner rounding phenomenon reappears. Figure 2 (The area marked by the solid elliptical box in the middle) This phenomenon also leads to poor consistency in the formed FinFET structure. Furthermore, the diagonal expansion of the point contact angle pattern requires additional space, and it cannot be effectively applied when there are pattern contact limitations between the correction layers and other layers.
[0059] To address the aforementioned issues, this application provides a method, apparatus, device, and storage medium for processing mask patterns. This method can resolve the problem of point contact angle diagonal pattern structures violating MRC (Mean Corresponding Control Code). Furthermore, to overcome the shortcomings of traditional technical solutions, it is necessary to ensure that no significant Corner Rounding phenomenon is caused and that no additional space is required for pattern expansion.
[0060] The technical solution of this application will now be described in detail through specific embodiments. It should be noted that the following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.
[0061] Figure 3 This is a flowchart illustrating a method for processing mask patterns provided in an embodiment of this application. This method can be applied to electronic devices that process mask patterns, such as... Figure 3 As shown, the method may specifically include the following steps: Step S301, determining the point contact angle diagonal pattern in the original mask pattern, wherein the point contact angle diagonal pattern intersects with the first pattern and the second pattern in the original mask pattern respectively.
[0062] In this embodiment, when the corners of the first pattern and the second pattern are close together (the distance can be on the nanometer scale), a point contact angle diagonal pattern will be formed at that point. Alternatively, if the corners of the first pattern and the second pattern intersect at a point, a point contact angle diagonal pattern will also be formed at that intersection. After OPC correction, the point contact angle diagonal pattern may cause a pinch-off phenomenon (see above). Figure 1 ).
[0063] One method is to determine the point contact angle diagonal pattern by having staff manually filter through the mask pattern, or by manually setting corresponding filtering rules, and then having a script machine filter out the point contact angle diagonal pattern from the mask pattern based on the filtering rules.
[0064] For example, Figure 4 This is a schematic diagram of the structure of the point contact angle diagonal pattern provided in the embodiments of this application, such as... Figure 4 As shown, in the original mask pattern 400, the corner of the first pattern 401 intersects with the corner of the second pattern 402, thus creating a point contact angle diagonal figure (marked by solid circle 403).
[0065] Step S302: Determine the area to be cut based on the position of the point contact angle diagonal graphic.
[0066] Step S303: Remove the area to be clipped from the original mask pattern to obtain the target mask pattern.
[0067] In this embodiment, due to the significant optical proximity effect at advanced manufacturing nodes, a bridging phenomenon occurs when two patterns are quite close. This phenomenon can be used to remove the area to be clipped in the original mask image to obtain the target mask image, making the OPC result obtained after performing OPC on it usable.
[0068] In this embodiment, the target mask image is used to occlude the processed image. For example, Figure 5 This is a schematic diagram of mask operation provided in an embodiment of this application, such as... Figure 5 As shown, taking a 3*3 image to be processed as an example, it includes 9 regions, each of which is identified by a different number. The target mask image size can correspond to 3*3. Here, the number 0 indicates that the target mask image does not occlude in this region, and the number 1 indicates that the target mask image occludes in this region. After the target mask image is superimposed on the image to be processed and the mask operation is performed, the final effect image is obtained.
[0069] In this embodiment, for example, the diagonal shape of the point contact angle can be used as a reference point, and the position of the diagonal shape of the point contact angle and its surrounding area can be used as the area to be clipped. The area to be clipped refers to the area that needs to be clipped from the original mask pattern. Furthermore, since MRC needs to be satisfied before OPC, the size of the area to be clipped can be adjusted in real time to satisfy MRC when clipping the original mask pattern. The MRC rules mainly include the following:
[0070] (1) Specify the minimum line width (minWidth) and line spacing (minSpace) of the pattern; or set minimum values for the line width and spacing of the sub-resolution auxiliary graphic (SRAF).
[0071] (2) Specify the minimum value of the corner-to-corner spacing of the graphics; or specify the distance between the sub-resolution auxiliary graphics (SRAF) and the main graphics.
[0072] (3) Limit the minimum area of the auxiliary figure.
[0073] For example, Figure 6 This is a schematic diagram illustrating the removal of the area to be clipped provided in an embodiment of this application, such as... Figure 6 As shown, the corners of the first pattern 401 and the second pattern 402 are determined in the original mask pattern 400, and the area to be clipped 603 is found. After clipping the area to be clipped 603 from the original mask pattern 400, the target mask pattern 600 is obtained.
[0074] pass Figure 6 As can be seen, the mask pattern processing method provided in this application does not expand the diagonal pattern of the point contact angle, requires no additional expansion space, and can be effectively applied even when there are pattern contact limitations between the correction layer and other layers. Furthermore, during subsequent OPC, pinch-off phenomena no longer occur, and corner rounding phenomena are effectively reduced. For example, Figure 7 This is a schematic diagram of the target mask pattern after OPC correction provided in an embodiment of this application, as shown below. Figure 7 As shown, through comparison Figure 7 and Figure 2 As can be seen from the elliptical solid-line frame, the target mask pattern after OPC correction does not exhibit obvious corner rounding.
[0075] This application embodiment obtains the target mask pattern by subtracting the area to be cut that conforms to MRC from the original mask pattern. Without causing pinch-off, it avoids the corner rounding phenomenon caused by expansion, which can improve the consistency of fin field-effect transistors and improve OPC performance.
[0076] Example 2
[0077] In this embodiment, the determination of the area to be cut can be achieved through the following steps: obtaining the initial size and constructing an initial area with the point contact angle diagonal graphic position as the center; determining whether the initial area meets the preset conditions; if the initial area meets the preset conditions, then the initial area is determined as the area to be cut.
[0078] In this embodiment, reference is continued to be made to the above. Figure 4 After determining the point contact angle diagonal pattern from the original mask pattern, the center point of the point contact angle diagonal pattern can be selected. Then, a geometric shape of a preset size (such as a rectangle or circle) can be selected, and the center point of this geometric shape can be used as the center point of the geometric shape. The area selected by this geometric shape in the original mask pattern is used as the initial region. Furthermore, it can be determined whether the initial region meets preset conditions. If it does, the initial region is determined as the region to be clipped. These preset conditions may include whether the area of the initial region reaches an area threshold, whether the size of the initial region (such as length, width, radius, etc.) reaches a size threshold, and whether it meets the MRC (Mean Correction Control).
[0079] This application embodiment checks the initial area by setting preset conditions, and finally determines the area to be clipped. At the same time, the area to be clipped in the original mask pattern is clipped, which can avoid the corner rounding phenomenon that occurs when performing OPC on the target mask pattern and improve the OPC effect.
[0080] Example 3
[0081] Based on the above embodiments, in some other embodiments, the determination of the area to be cropped can be achieved through the following steps: expanding the initial area; determining whether the expanded initial area meets the preset conditions; if the expanded initial area meets the preset conditions, then the initial area is determined as the area to be cropped; if the expanded initial area does not meet the preset conditions, then the expanded initial area is further expanded until the preset conditions are met.
[0082] In this embodiment, the preset condition may be whether the initial region or the expanded initial region meets the MRC (Mean Change Registry). If the initial region does not meet the preset condition, the initial region can be expanded. If the expanded initial region does not meet the preset condition, the expansion continues until it meets the preset condition, and then the expanded initial region is used as the region to be clipped.
[0083] For example, refer to the above. Figure 6After determining the center point, a rectangle can be used as the shape of the set. The center point of the rectangle is taken as the center point of the point-contact-angle diagonal figure. Then, the length and / or width of the rectangle are increased to continuously expand the size of the rectangle until a rectangle that meets the preset conditions is obtained, which is used as the area to be clipped.
[0084] In other embodiments, after determining the center point of the point contact angle diagonal figure, other geometric shapes such as circles can also be used. For example, the center point of the point contact angle diagonal figure can be used as the center point of the circle, and then the diameter or radius of the circle can be increased to continuously expand the size of the circle until a circle that meets the preset conditions is obtained, which can be used as the area to be cut.
[0085] This application embodiment uses MRC as a condition constraint, increases the size of the initial region to obtain the region to be cut, and then cuts out the region to be cut from the original mask pattern. It processes the point contact angle diagonal pattern that violates MRC without expansion, which can avoid the corner rounding problem caused by the expansion of the point contact angle diagonal pattern. At the same time, it also solves the problem of poor structural consistency of fin field-effect transistors caused by the corner rounding problem, thus improving the product yield.
[0086] Example 4
[0087] Based on the above embodiments, in this embodiment, determining whether the preset conditions are met can be achieved through the following steps: removing the initial region or the expanded initial region from the original mask pattern to obtain the removed original mask pattern; performing a mask rule check on the removed original mask pattern to obtain the check result; and determining whether the initial region or the expanded initial region meets the preset conditions based on the check result.
[0088] In this embodiment, the initial region can be removed from the original mask pattern, and it is determined whether the original mask pattern after removal satisfies the Mask Rule Check (MRC). If it satisfies the MRC, the initial region is directly identified as the region to be clipped, and the original mask pattern after removal can be directly used as the target mask pattern. Further, if the MRC is not satisfied, the removal range can be further expanded in the original mask pattern after removal, i.e., the initial region is expanded. Then, the expanded initial region is removed from the original mask pattern to obtain the original mask pattern after secondary removal. If the MRC is satisfied, the expanded initial region is directly identified as the region to be clipped, and the original mask pattern after secondary removal can be directly used as the target mask pattern. If the MRC is not satisfied, a third removal can be performed. This iterative process, by continuously expanding the initial region and removing the expanded initial region, eventually satisfies the preset conditions, determining the region to be clipped and the target mask pattern.
[0089] For example, a rectangle is generated centered on the point contact angle diagonal graphic position. Then, the generated rectangle is subtracted from the original mask pattern. At the same time, the size of the rectangle is gradually expanded using an iterative algorithm until the generated new mask pattern satisfies the MRC. At this point, the generated new mask pattern is the target mask pattern. The mask rule check is the MRC.
[0090] This application embodiment, by subtracting the cut-off area conforming to MRC from the original mask pattern, avoids the corner rounding phenomenon caused by expansion without pinching off, thereby improving the consistency of fin field-effect transistors and increasing product yield.
[0091] Example 5
[0092] In this embodiment, determining the point contact angle diagonal pattern in the original mask pattern can be achieved through the following steps: determining the corners of the first pattern and the second pattern in the original mask pattern; determining whether the corners of the first pattern and the second pattern intersect; if the corners of the first pattern and the second pattern intersect, obtaining the intersection point; and determining the point contact angle diagonal pattern based on the intersection point.
[0093] In this embodiment, when a point contact angle diagonal pattern appears, this pattern violates the MRC (Mean Corresponding Control Code) and needs to be processed. Otherwise, after performing OPC (Optical Processing) on the entire original mask pattern, the OPC result will be unusable (e.g., a pinch-off phenomenon occurs). For example, a point contact angle diagonal pattern can be understood as two patterns existing in the original mask pattern that are close to each other or have one intersecting point, causing a pinch-off phenomenon when performing OPC on the original mask pattern.
[0094] For example, continue to refer to the above. Figure 4 ,like Figure 4 As shown, the lower left corner of the first pattern 401 and the upper right corner of the second pattern 402 intersect at a point. This intersection point is used as the center point of the point contact angle diagonal figure to determine the point contact angle diagonal figure.
[0095] Optionally, in other embodiments, when the corner points of the first pattern and the corner points of the second pattern do not intersect, it can be determined whether the distance between the corner points of the first pattern and the corner points of the second pattern meets a preset threshold; if the distance between the corner points of the first pattern and the corner points of the second pattern meets the preset threshold, then the point contact angle diagonal pattern is determined based on the corner points of the first pattern and the corner points of the second pattern.
[0096] In this embodiment, since semiconductor technology involves nanometer-scale measurements, the preset threshold is also at the nanometer scale. When the distance between the corners of the first pattern and the corners of the second pattern meets the preset threshold but do not intersect, it can be determined that the corners of the first pattern and the corners of the second pattern are similar. However, the similarity between the corners of the first and second patterns may also lead to MRC problems, violating MRC rules and causing the OPC result to be unusable after OPC processing (e.g., a pinch-off phenomenon occurs).
[0097] This application embodiment finds the point contact angle diagonal pattern in the original mask pattern and clips the point contact angle diagonal pattern without expanding the original mask pattern. This solves the MRC problem caused by the point contact angle diagonal pattern even in scenarios with expansion limitations, thus improving applicability in various scenarios.
[0098] Example 6
[0099] In this embodiment, when obtaining the target mask pattern, the area to be clipped can be removed from the original mask pattern to obtain the removed mask pattern; the removed mask pattern is then corrected for optical proximity effect to obtain the target mask pattern.
[0100] For example, continue to refer to the above. Figure 6 By removing the area 603 to be clipped from the original mask pattern 400, the clipped mask pattern 600 is obtained. Further, refer to... Figure 7 By performing OPC analysis on the removed mask pattern 600, it can be found that there is no pinch-off phenomenon (comparable to...). Figure 7 The dashed lines in the middle and Figure 1 The dashed line (middle line) did not show obvious corner rounding (compare with the dashed line). Figure 7 Solid line ellipse and Figure 2 (Solid line ellipse frame).
[0101] The newly generated target mask pattern in this embodiment overcomes the limitation of graphic expansion between layers, and the contour obtained after OPC does not exhibit any interruption phenomenon. Furthermore, it is achieved through... Figure 2 The results show that the corner rounding phenomenon can be well controlled at the corner, improving the consistency of the fin field-effect transistor structure.
[0102] The following are embodiments of the apparatus described in this application, which can be used to execute the embodiments of the method described in this application. For details not disclosed in the apparatus embodiments of this application, please refer to the embodiments of the method described in this application.
[0103] Figure 8 This is a schematic diagram of the structure of a mask pattern processing apparatus provided for implementation of this application. This mask pattern processing apparatus can be located in an electronic device, such as... Figure 8As shown, the mask pattern processing device 800 may specifically include a circle determination module 810, a region determination module 820, and a pattern acquisition module 830. The circle determination module 810 is used to determine a point contact angle diagonal pattern in the original mask pattern, the point contact angle diagonal pattern intersecting with a first pattern and a second pattern in the original mask pattern, respectively. The region determination module 820 is used to determine the region to be clipped based on the position of the point contact angle diagonal pattern. The pattern acquisition module 830 is used to remove the region to be clipped from the original mask pattern to obtain the target mask pattern.
[0104] Optionally, the aforementioned region determination module can be used to: obtain the initial size and construct an initial region centered on the diagonal position of the point contact angle; determine whether the initial region meets the preset conditions; if the initial region meets the preset conditions, then determine the initial region as the region to be clipped.
[0105] Optionally, the aforementioned region determination module can be used to: expand the initial region; determine whether the expanded initial region meets the preset conditions; if the expanded initial region meets the preset conditions, then determine the initial region as the region to be cropped; if the expanded initial region does not meet the preset conditions, then continue to expand the expanded initial region until the preset conditions are met.
[0106] Optionally, the aforementioned region determination module can be used to: remove the initial region or the expanded initial region from the original mask pattern to obtain the removed original mask pattern; perform mask rule checks on the removed original mask pattern to obtain the check results; and determine whether the initial region or the expanded initial region meets the preset conditions based on the check results.
[0107] Optionally, the above-mentioned graphic determination module can be used to: determine the corners of the first pattern and the corners of the second pattern in the original mask pattern; determine whether the corners of the first pattern and the corners of the second pattern intersect; if the corners of the first pattern and the corners of the second pattern intersect, obtain the intersection point; and determine the point contact angle diagonal graphic based on the intersection point.
[0108] Optionally, the above-mentioned pattern determination module can be used to: determine whether the distance between the corner of the first pattern and the corner of the second pattern meets a preset threshold; if the distance between the corner of the first pattern and the corner of the second pattern meets the preset threshold, then determine the point contact angle diagonal pattern based on the corner of the first pattern and the corner of the second pattern.
[0109] Optionally, the pattern acquisition module described above can be used to: remove the area to be clipped from the original mask pattern to obtain the removed mask pattern; and perform optical proximity effect correction on the removed mask pattern to obtain the target mask pattern.
[0110] The apparatus provided in this application embodiment can be used to execute the methods in the above-described embodiments, and its implementation principle and technical effects are similar, so they will not be described again here.
[0111] It should be noted that the division of the various modules in the above device is merely a logical functional division. In actual implementation, they can be fully or partially integrated into a single physical entity, or they can be physically separated. Furthermore, these modules can be implemented entirely in software via processing element calls; they can be fully implemented in hardware; or some modules can be implemented in software via processing element calls, while others are implemented in hardware. For example, the graphics determination module can be a separate processing element, or it can be integrated into a chip in the above device. Alternatively, it can be stored as program code in the memory of the above device, and its function can be called and executed by a processing element. The implementation of other modules is similar. Moreover, these modules can be fully or partially integrated together, or they can be implemented independently. The processing element here can be an integrated circuit with signal processing capabilities. In the implementation process, each step of the above method or each of the above modules can be completed through integrated logic circuits in the hardware of the processor element or through software instructions.
[0112] Figure 9 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Figure 9 As shown, the electronic device 900 includes at least one processor 910, a memory 920, a bus 930, and a communication interface 940. The processor 910, communication interface 940, and memory 920 communicate with each other via the bus 930. The communication interface 940 is used to communicate with other devices. This communication interface includes a communication interface for data transmission and a display interface or operation interface for human-computer interaction. The processor 910 executes computer execution instructions stored in the memory, specifically performing the relevant steps in the methods described in the above embodiments. The processor may be a central processing unit, an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present invention. The one or more processors included in the electronic device may be processors of the same type, such as one or more CPUs; or they may be processors of different types, such as one or more CPUs and one or more ASICs. The memory 920 stores computer execution instructions. The memory may include high-speed RAM and may also include non-volatile memory, such as at least one disk storage device.
[0113] This embodiment also provides a computer-readable storage medium storing computer instructions. When at least one processor of an electronic device executes the computer instructions, the electronic device performs the mask pattern processing method provided in the various embodiments described above.
[0114] This embodiment also provides a computer program product including computer instructions stored in a readable storage medium. At least one processor of an electronic device can read the computer instructions from the readable storage medium, and the processor executes the computer instructions to cause the electronic device to perform the mask pattern processing methods provided in the various embodiments described above.
[0115] In this application, "at least one" means one or more, and "more than one" means two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates an "or" relationship between the preceding and following related objects; in formulas, the character " / " indicates a "division" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can represent: a, b, c, ab, ac, bc, or abc, where a, b, and c can be single or multiple.
[0116] It is understood that the various numerical designations used in the embodiments of this application are merely for descriptive convenience and are not intended to limit the scope of the embodiments of this application. In the embodiments of this application, the order of the above-mentioned process numbers does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.
[0117] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.
Claims
1. A method for processing a mask pattern, characterized in that, include: A point contact angle diagonal pattern is determined in the original mask pattern, and the point contact angle diagonal pattern intersects with the first pattern and the second pattern in the original mask pattern respectively; Obtain the initial size and construct the initial region centered on the diagonal position of the point contact angle; Determine whether the initial region meets the preset conditions; If the initial region does not meet the preset conditions, the initial region is expanded. Determine whether the expanded initial region meets the preset conditions; If the expanded initial region does not meet the preset condition, the expanded initial region is further expanded until the preset condition is met; wherein, the preset condition is: whether the original mask pattern after removing the initial region or the expanded initial region meets the mask rule check MCR; The area to be clipped is removed from the original mask pattern to obtain the target mask pattern; the area to be clipped is the initial area or the enlarged initial area.
2. The method according to claim 1, characterized in that, Also includes: If the initial region meets the preset conditions, then the initial region is determined as the region to be cropped.
3. The method according to claim 2, characterized in that, Also includes: If the expanded initial region meets the preset conditions, then the initial region is determined as the region to be clipped.
4. The method according to claim 2 or 3, characterized in that, Determine whether the preset conditions are met, including: The initial region or the enlarged initial region is removed from the original mask pattern to obtain the original mask pattern after removal; Perform mask rule checks on the original mask pattern after removal to obtain the check results; Based on the inspection results, determine whether the initial region or the expanded initial region meets the preset conditions.
5. The method according to claim 1, characterized in that, The step of determining the diagonal pattern of point contact angles in the original mask pattern includes: The corners of the first pattern and the corners of the second pattern are determined in the original mask pattern; Determine whether the corners of the first pattern and the corners of the second pattern intersect; If the corner of the first pattern intersects with the corner of the second pattern, then the intersection point is obtained; Based on the intersection points, the diagonal shape of the point contact angle is determined.
6. The method according to claim 5, characterized in that, If the corner points of the first pattern do not intersect with the corner points of the second pattern, the method further includes: Determine whether the distance between the corner of the first pattern and the corner of the second pattern meets a preset threshold. If the distance between the corner of the first pattern and the corner of the second pattern meets a preset threshold, then the point contact angle diagonal pattern is determined based on the corner of the first pattern and the corner of the second pattern.
7. The method according to claim 1, characterized in that, The step of removing the region to be clipped from the original mask pattern to obtain the target mask pattern includes: The area to be clipped is removed from the original mask pattern to obtain the clipped mask pattern; The target mask pattern is obtained by performing optical proximity correction on the removed mask pattern.
8. A mask pattern processing apparatus, characterized in that, include: The pattern determination module is used to determine the point contact angle diagonal pattern in the original mask pattern, wherein the point contact angle diagonal pattern intersects with the first pattern and the second pattern in the original mask pattern respectively; The region determination module is used to obtain the initial size and construct an initial region centered on the diagonal position of the point contact angle. Determine whether the initial region meets the preset conditions; If the initial region does not meet the preset conditions, the initial region is expanded. Determine whether the expanded initial region meets the preset conditions; If the expanded initial region does not meet the preset condition, the expanded initial region is further expanded until the preset condition is met; wherein, the preset condition is: whether the original mask pattern after removing the initial region or the expanded initial region meets the mask rule check MCR; The pattern acquisition module is used to remove the area to be cropped from the original mask pattern to obtain the target mask pattern; the area to be cropped is the initial area or the enlarged initial area.
9. An electronic device, characterized in that, include: A processor, and a memory communicatively connected to the processor; The memory stores computer-executed instructions; The processor executes computer execution instructions stored in the memory to implement the method as described in any one of claims 1-7.
10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer instructions that, when executed by a processor, are used to implement the method as described in any one of claims 1-7.
11. A computer program product comprising computer instructions, characterized in that, When executed by a processor, the computer instructions implement the method described in any one of claims 1-7.