A Sb-Te-C phase change memory material, its preparation method and application

Abstract

This invention belongs to the field of microelectronics technology, and more specifically, relates to an Sb-Te-C phase change memory material, its preparation method, and its application. The Sb-Te-C phase change memory material of this invention has the general chemical formula (Sb... i Te j ) 100‑x C x Where x, i, and j represent atomic percentages, 0 < x ≤ 30, 0 < i ≤ 50, 50 ≤ j < 100, and i + j = 100. Compared with undoped C Sb-Te phase change materials, the Sb-Te-C phase change thin film material provided by this invention exhibits a gradually decreasing resistance curve with increasing C concentration, demonstrating potential for application in artificial neural networks and neuromorphic computing. Furthermore, the increased resistance window and absolute resistance value of the Sb-Te-C phase change material indicate greater data differentiation and reduced power consumption. Additionally, the phase transition temperature of the Sb-Te-C phase change material is significantly improved, enhancing thermal stability and data retention.

Description

Technical Field

[0001] This invention belongs to the field of microelectronics technology, and more specifically, relates to an Sb-Te-C phase change memory material, its preparation method, and its application. Background Technology

[0002] In the information explosion era, the volume of data generated by electronic products, cloud computing, and big data is increasing dramatically, placing higher demands on the performance of existing storage devices. However, there is a significant speed gap between volatile and non-volatile memory in the existing storage hierarchy, and Moore's Law is facing limitations, making it difficult to continue using device size reduction to improve storage performance. Furthermore, in existing computing systems based on the von Neumann architecture, processing units and storage units are physically separated. All of these factors limit data processing speed and cause significant energy waste.

[0003] Phase change materials (PCMs) can undergo rapid and reversible phase transitions between amorphous and crystalline structures via light or electrical pulses, resulting in significant changes in their optical and electrical properties, which can be used to realize phase change memory. In a PCM cell, a narrow-pulse, high-amplitude electrical pulse is used to perform a RESET operation, causing the crystalline PCM to melt and rapidly cool, transforming it into an amorphous state, thus achieving a change from a low-resistivity state "0" to a high-resistivity state "1". Conversely, a wide-pulse, low-amplitude electrical pulse is used to perform a SET operation, causing the amorphous PCM to undergo a crystallization phase transition, returning to the low-resistivity state "0". As a novel type of non-volatile memory, PCM not only possesses numerous advantages, such as bridging the performance and cost gap between existing volatile and non-volatile memories, but also boasts high read / write speeds, high storage density, and compatibility with traditional CMOS processes, making it a promising candidate for the memory market.

[0004] Sb₂Te₃ is a promising phase change material, belonging to the extensively studied GeTe–Sb₂Te₃ pseudo-binary phase change alloys. Due to its growth-dominated crystallization mechanism, Sb₂Te₃ exhibits relatively fast switching speeds. However, Sb₂Te₃ has a low crystallization temperature of approximately 150°C, resulting in an unstable amorphous state that cannot guarantee data retention for PCRAM applications. Furthermore, the low-resistivity crystalline state of Sb₂Te₃ leads to high operating power consumption, making it unsuitable for efficient non-volatile data storage. To improve the storage performance of Sb₂Te₃ phase change materials, doping modification is necessary. Summary of the Invention

[0005] To address the shortcomings of existing technologies, this invention provides an Sb-Te-C phase change memory material, its preparation method, and its application. This solves the problems of high operating energy consumption and poor data retention characteristics caused by the low-resistivity crystalline state of Sb2Te3 in existing technologies, making it suitable for effective non-volatile data storage technologies.

[0006] To achieve the above objectives, this invention provides an Sb-Te-C phase change memory material with the general chemical formula (Sb... i Te j ) 100-x C x , where x, i and j represent atomic percentages, 0 < x ≤ 30, 0 < i ≤ 50, 50 ≤ j < 100, i + j = 100.

[0007] Preferably, the value range of x is 15≤x≤30, 30≤i≤50, 50≤j≤70, and i+j=100.

[0008] Preferably, in the Sb-Te-C phase change memory material, C atoms exist in the interstitial spaces of the Sb-Te lattice and form chemical bonds with Sb-Te.

[0009] Preferably, the Sb-Te-C phase change memory material is an Sb-Te-C phase change thin film material.

[0010] More preferably, the thickness of the phase change thin film material is 100-250 nm.

[0011] Preferably, the resistance curve of the Sb-Te-C phase change memory material as a function of temperature exhibits a gradually changing characteristic.

[0012] Preferably, the phase transition temperature of the Sb-Te-C phase change memory material is 260℃±20℃.

[0013] Preferably, the resistance window of the Sb-Te-C phase change memory material is larger than that of the Sb-Te phase change memory material.

[0014] According to another aspect of the present invention, a method for preparing the phase change storage material is provided, which is magnetron sputtering, chemical vapor deposition, atomic layer deposition, electroplating or electron beam evaporation.

[0015] Preferably, the preparation method is magnetron sputtering, and the specific magnetron sputtering method is any one of the following four methods: (1) co-sputtering of C, Sb and Te targets; (2) C and Sb i Te j Co-sputtering; (3) Sb after C doping i Te jAlloy target sputtering and (4) placing graphite sheets directly on Sb i Te j Doping and sputtering are performed on alloy targets.

[0016] According to another aspect of the present invention, an application of the Sb-Te-C phase change memory material in a phase change memory is provided.

[0017] According to another aspect of the present invention, an application of the Sb-Te-C phase change storage material in a neuronal device is provided.

[0018] In summary, compared with the prior art, the above-described technical solutions conceived by this invention have the following advantages:

[0019] Beneficial effects:

[0020] This invention introduces carbon into existing Sb-Te phase change memory materials, resulting in an Sb-Te-C phase change memory material for use in phase change memory. The resistance of this material exhibits a gradually changing temperature curve, demonstrating potential for application in artificial neural networks and neuromorphic computing (neural devices). Furthermore, the increased resistance window of the Sb-Te-C phase change material signifies greater data differentiation. Additionally, the absolute resistance value at the same temperature is significantly increased compared to the undoped C material. Therefore, the operating power consumption of this Sb-Te-C phase change memory material is significantly reduced when applied to phase change memory devices compared to Sb-Te phase change memory materials. Moreover, the phase transition temperature of the Sb-Te-C phase change material is substantially increased, enhancing thermal stability and data retention.

[0021] The Sb-Te-C phase change memory material of this invention has a mature preparation process and is easy to achieve compatibility with existing microelectronic process technologies. The Sb-Te-C phase change memory material of this invention not only inherits the advantages of Sb-based phase change memory materials such as fast phase change speed, but also has a high phase change temperature and a large resistance window, which is beneficial to improving data retention and discrimination ability, and reducing power consumption. Attached Figure Description

[0022] Figure 1 The curves showing the relationship between the in-situ resistivity and annealing temperature of the Sb-Te-C phase change memory materials with different C contents and the Sb-Te phase change memory material of Comparative Example 1 are shown, wherein the heating rate is 9℃ / min. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0024] This invention provides an Sb-Te-C phase change memory material, whose general chemical formula is (Sb i Te j ) 100-x C x Where x, i, and j represent atomic percentages, 0 < x ≤ 30, 0 < i ≤ 50, 50 ≤ j < 100, and i + j = 100. In a preferred embodiment, the value range of x is 15 ≤ x ≤ 30, 30 ≤ i ≤ 50, 50 ≤ j ≤ 70, and i + j = 100.

[0025] In the Sb-Te-C phase change memory material of this invention, C atoms exist in the interstitial spaces of the Sb-Te lattice and form chemical bonds with Sb-Te. In some embodiments, the Sb-Te-C phase change memory material is an Sb-Te-C phase change thin film material. The thickness of the phase change thin film material is 100-250 nm. Experiments have shown that the resistance curve of the Sb-Te-C phase change memory material of this invention exhibits a gradual change characteristic with temperature, meaning that its resistance does not have an abrupt change point with temperature. The phase change temperature of the Sb-Te-C phase change memory material is 260℃±20℃. The resistance window of the Sb-Te-C phase change memory material is larger than that of the Sb-Te phase change memory material, and it increases with the increase of x within a certain range. Experiments have shown that when C is lightly doped (x less than or equal to 15), the prepared Sb-Te-C thin film material has an abrupt change point and does not exhibit a gradual change characteristic.

[0026] The present invention also provides a method for preparing the phase change storage material, which is magnetron sputtering, chemical vapor deposition, atomic layer deposition, electroplating or electron beam evaporation.

[0027] In some embodiments, C-doped Sb-Te-C phase change memory materials are prepared by magnetron sputtering. Specifically, the magnetron sputtering method is any one of the following four methods: (1) co-sputtering of C, Sb and Te targets; (2) C and Sb i Te j Co-sputtering; (3) Sb after C doping i Te j Alloy target sputtering and (4) placing graphite sheets directly on Sb i Te j Doping and sputtering are performed on alloy targets.

[0028] The Sb-Te-C phase-change memory material provided by this invention has a larger resistance window compared to undoped Sb₂Te₃, which means greater distinguishability of stored data when used in phase-change memory devices. Furthermore, the absolute resistance value at the same temperature is significantly increased compared to the undoped Sb₂Te₃, resulting in a significant reduction in power consumption when applied to phase-change memory devices compared to Sb-Te phase-change memory materials. Additionally, the phase transition temperature of the Sb-Te-C phase-change material is significantly increased, enhancing thermal stability and data retention when used in phase-change memory devices. Moreover, the Sb-Te-C phase-change memory material provided by this invention exhibits a gradually changing resistance curve with temperature, showing potential for application in artificial neural networks and neuromorphic computing, and is expected to be used in the fabrication of phase-change memory neuronal devices.

[0029] The following is an example:

[0030] Example 1

[0031] The general chemical composition formula of the nano-Sb-Te-C phase change thin film material for phase change memory prepared in this embodiment is (ST). 100-x C x , where ST represents Sb2Te3.

[0032] Sb-Te-C nanofilm materials were prepared by magnetron sputtering. High-purity Ar gas was used as the sputtering gas at a pressure of 0.6 Pa. The Sb₂Te₃ target was co-sputtered using a 30W radio frequency power supply, and the C target was co-sputtered using a 10W DC power supply. The specific preparation method includes the following steps:

[0033] ① Select a SiO2 / Si(100) substrate with a size of 1cm×1cm, clean the surface and back side to remove dust particles, organic and inorganic impurities.

[0034] a) The SiO2 / Si(100) substrate was sonicated in acetone solution at 40W for 3 minutes and then rinsed with deionized water;

[0035] b) The treated substrate was sonicated in an ethanol solution at 40W for 3 minutes, rinsed with deionized water, and then dried with high-purity N2 gas to obtain the substrate to be sputtered.

[0036] ② Preparations before preparing Sb-Te-C membranes using co-sputtering method.

[0037] a) Load the substrate, Sb2Te3 target, and C target. The purity of the target reaches 99.99% (atomic percentage), and the background vacuum is evacuated to 9 × 10⁻⁶. -5 pa;

[0038] b) Use high-purity Ar gas as the sputtering gas and adjust the sputtering pressure to 0.6 Pa, with a target and substrate distance of 70 mm;

[0039] c) Set the power of the RF and DC sputtering power supplies to 30W and 10W respectively.

[0040] ③ Sb-Te-C nanophase change thin film material was prepared by magnetron sputtering.

[0041] a) Perform pre-sputtering and clean the target surface;

[0042] b) After the target surface is cleaned, the in-situ resistivity annealing measurement is performed according to the set sputtering time of 1500s.

[0043] Example 2

[0044] The general chemical composition formula of the nano-Sb-Te-C phase change thin film material for phase change memory prepared in this embodiment is (ST). 100-x C x , where ST represents Sb2Te3.

[0045] Sb-Te-C nanofilm materials were prepared by magnetron sputtering. High-purity Ar gas was used as the sputtering gas at a pressure of 0.6 Pa. The Sb₂Te₃ target was co-sputtered using a 30W radio frequency power supply, and the C target was co-sputtered using a 15W DC power supply. The specific preparation method includes the following steps:

[0046] ① Select a SiO2 / Si(100) substrate with a size of 1cm×1cm, clean the surface and back side to remove dust particles, organic and inorganic impurities.

[0047] a) The SiO2 / Si(100) substrate was sonicated in acetone solution at 40W for 3 minutes and then rinsed with deionized water;

[0048] b) The treated substrate was sonicated in an ethanol solution at 40W for 3 minutes, rinsed with deionized water, and then dried with high-purity N2 gas to obtain the substrate to be sputtered.

[0049] ② Preparations before preparing Sb-Te-C membranes using co-sputtering method.

[0050] a) Load the substrate, Sb2Te3 target, and C target. The purity of the target reaches 99.99% (atomic percentage), and the background vacuum is evacuated to 9 × 10⁻⁶. -5 pa;

[0051] b) Use high-purity Ar gas as the sputtering gas and adjust the sputtering pressure to 0.6 Pa, with a target and substrate distance of 70 mm;

[0052] c) Set the power of the RF and DC sputtering power supplies to 30W and 15W respectively.

[0053] ③ Sb-Te-C nanophase change thin film material was prepared by magnetron sputtering.

[0054] a) Perform pre-sputtering and clean the target surface;

[0055] b) After the target surface is cleaned, the in-situ resistivity annealing measurement is performed according to the set sputtering time of 1500s.

[0056] Example 3

[0057] The general chemical composition formula of the nano-Sb-Te-C phase change thin film material for phase change memory prepared in this embodiment is (ST). 100-x C x , where ST represents Sb2Te3, and in this embodiment x = 15.57.

[0058] Sb-Te-C nanofilm materials were prepared by magnetron sputtering. High-purity Ar gas was used as the sputtering gas at a pressure of 0.6 Pa. The Sb₂Te₃ target was co-sputtered using a 30W radio frequency power supply, and the C target was co-sputtered using a 20W DC power supply. The specific preparation method includes the following steps:

[0059] ① Select a SiO2 / Si(100) substrate with a size of 1cm×1cm, clean the surface and back side to remove dust particles, organic and inorganic impurities.

[0060] a) The SiO2 / Si(100) substrate was sonicated in acetone solution at 40W for 3 minutes and then rinsed with deionized water;

[0061] b) The treated substrate was sonicated in an ethanol solution at 40W for 3 minutes, rinsed with deionized water, and then dried with high-purity N2 gas to obtain the substrate to be sputtered.

[0062] ②Prepared by co-sputtering (ST) 84.43 C 15.57 Pre-membrane preparation.

[0063] a) Load the substrate, Sb2Te3 target, and C target. The purity of the target reaches 99.99% (atomic percentage), and the background vacuum is evacuated to 9 × 10⁻⁶. -5 pa;

[0064] b) Use high-purity Ar gas as the sputtering gas and adjust the sputtering pressure to 0.6 Pa, with a target and substrate distance of 70 mm;

[0065] c) Set the power of the RF and DC sputtering power supplies to 30W and 20W respectively.

[0066] ③Preparation by magnetron sputtering (ST) 84.43 C 15.57 Nanoscale phase change thin film materials.

[0067] a) Perform pre-sputtering and clean the target surface;

[0068] b) After the target surface is cleaned, the (ST) is prepared according to the set sputtering time of 1500s. 84.43 C 15.57 The thin film, approximately 184 nm thick, was used for in-situ resistivity annealing measurements. Quantitative analysis using X-ray photoelectron spectroscopy (XPS) revealed the chemical composition of the thin film material in this embodiment to be (ST). 84.43 C 15.57 .

[0069] Example 4

[0070] The general chemical composition formula of the nano-Sb-Te-C phase change thin film material for phase change memory prepared in this embodiment is (ST). 100-x C x , where ST represents Sb2Te3, and in this embodiment x = 19.05.

[0071] Sb-Te-C nanofilm materials were prepared by magnetron sputtering. High-purity Ar gas was used as the sputtering gas at a pressure of 0.6 Pa. The Sb₂Te₃ target was co-sputtered using a 30W radio frequency power supply, and the C target was co-sputtered using a 30W DC power supply. The specific preparation method includes the following steps:

[0072] ① Select a SiO2 / Si(100) substrate with a size of 1cm×1cm, clean the surface and back side to remove dust particles, organic and inorganic impurities.

[0073] a) The SiO2 / Si(100) substrate was sonicated in acetone solution at 40W for 3 minutes and then rinsed with deionized water;

[0074] b) The treated substrate was sonicated in an ethanol solution at 40W for 3 minutes, rinsed with deionized water, and then dried with high-purity N2 gas to obtain the substrate to be sputtered.

[0075] ②Prepared by co-sputtering (ST) 80.95 C 19.05 Pre-membrane preparation.

[0076] a) Load the substrate, Sb2Te3 target, and C target. The purity of the target reaches 99.99% (atomic percentage), and the background vacuum is evacuated to 9 × 10⁻⁶. -5 pa;

[0077] b) Use high-purity Ar gas as the sputtering gas and adjust the sputtering pressure to 0.6 Pa, with a target and substrate distance of 70 mm;

[0078] c) Set the power of the RF and DC sputtering power supplies to 30W and 30W respectively.

[0079] ③Preparation by magnetron sputtering (ST) 80.95 C 19.05 Nanoscale phase change thin film materials.

[0080] a) Perform pre-sputtering and clean the target surface;

[0081] b) After the target surface is cleaned, the (ST) is prepared according to the set sputtering time of 1500s. 80.95 C 19.05 The thin film, approximately 186 nm thick, was used for in-situ resistivity annealing measurements. Quantitative analysis using X-ray photoelectron spectroscopy (XPS) revealed the chemical composition of the thin film material in this embodiment to be (ST). 80.95 C 19.05 .

[0082] Example 5

[0083] The general chemical composition formula of the nano-Sb-Te-C phase change thin film material for phase change memory prepared in this embodiment is (ST). 100-x C x , where ST represents Sb2Te3, and in this embodiment x = 24.79.

[0084] Sb-Te-C nanofilm materials were prepared by magnetron sputtering. High-purity Ar gas was used as the sputtering gas at a pressure of 0.6 Pa. The Sb₂Te₃ target was co-sputtered using a 30W radio frequency power supply, and the C target was co-sputtered using a 60W DC power supply. The specific preparation method includes the following steps:

[0085] ① Select a SiO2 / Si(100) substrate with a size of 1cm×1cm, clean the surface and back side to remove dust particles, organic and inorganic impurities.

[0086] a) The SiO2 / Si(100) substrate was sonicated in acetone solution at 40W for 3 minutes and then rinsed with deionized water;

[0087] b) The treated substrate was sonicated in an ethanol solution at 40W for 3 minutes, rinsed with deionized water, and then dried with high-purity N2 gas to obtain the substrate to be sputtered.

[0088] ②Prepared by co-sputtering (ST) 75.21 C 24.79 Pre-membrane preparation.

[0089] a) Load the substrate, Sb2Te3 target, and C target. The purity of the target reaches 99.99% (atomic percentage), and the background vacuum is evacuated to 9 × 10⁻⁶. -5 pa;

[0090] b) Use high-purity Ar gas as the sputtering gas and adjust the sputtering pressure to 0.6 Pa, with a target and substrate distance of 70 mm;

[0091] c) Set the power of the RF and DC sputtering power supplies to 30W and 60W respectively.

[0092] ③Preparation by magnetron sputtering (ST) 75.21 C 24.79 Nanoscale phase change thin film materials.

[0093] a) Perform pre-sputtering and clean the target surface;

[0094] b) After the target surface is cleaned, the (ST) is prepared according to the set sputtering time of 1500s. 75.21 C 24.79 The thin film, approximately 195 nm thick, was used for in-situ resistivity annealing measurements. Quantitative analysis using X-ray photoelectron spectroscopy (XPS) revealed the chemical composition of the thin film material in this embodiment to be (ST). 75.21 C 24.79 .

[0095] Example 6

[0096] The general chemical composition formula of the nano-Sb-Te-C phase change thin film material for phase change memory prepared in this embodiment is (ST). 100-x C x , where ST represents Sb2Te3, and in this embodiment x = 27.70.

[0097] Sb-Te-C nanofilm materials were prepared by magnetron sputtering. High-purity Ar gas was used as the sputtering gas at a pressure of 0.6 Pa. The Sb₂Te₃ target was co-sputtered using a 30W radio frequency power supply, and the C target was co-sputtered using an 80W DC power supply. The specific preparation method includes the following steps:

[0098] ① Select a SiO2 / Si(100) substrate with a size of 1cm×1cm, clean the surface and back side to remove dust particles, organic and inorganic impurities.

[0099] a) The SiO2 / Si(100) substrate was sonicated in acetone solution at 40W for 3 minutes and then rinsed with deionized water;

[0100] b) The treated substrate was sonicated in an ethanol solution at 40W for 3 minutes, rinsed with deionized water, and then dried with high-purity N2 gas to obtain the substrate to be sputtered.

[0101] ②Prepared by co-sputtering (ST) 72.30 C 27.70 Pre-membrane preparation.

[0102] a) Load the substrate, Sb2Te3 target, and C target. The purity of the target reaches 99.99% (atomic percentage), and the background vacuum is evacuated to 9 × 10⁻⁶. -5 pa;

[0103] b) Use high-purity Ar gas as the sputtering gas and adjust the sputtering pressure to 0.6 Pa, with a target and substrate distance of 70 mm;

[0104] c) Set the power of the RF and DC sputtering power supplies to 30W and 80W respectively.

[0105] ③Preparation by magnetron sputtering (ST) 72.3 C 27.7 Nanoscale phase change thin film materials.

[0106] a) Perform pre-sputtering and clean the target surface;

[0107] b) After the target surface is cleaned, the (ST) is prepared according to the set sputtering time of 1500s. 72.30 C 27.70 The thin film, approximately 201 nm thick, was used for in-situ resistivity annealing measurements. Quantitative analysis using X-ray photoelectron spectroscopy (XPS) revealed the chemical composition of the thin film material in this embodiment to be (ST). 72.30 C 27.70 .

[0108] Comparative Example 1

[0109] In Comparative Example 1, a single-layer Sb2Te3 phase change thin film material was prepared.

[0110] Sb₂Te₃ nanofilm materials were prepared by magnetron sputtering. High-purity Ar gas was used as the sputtering gas at a pressure of 0.6 Pa. The Sb₂Te₃ target was prepared using a 30W DC power supply. The specific preparation method includes the following steps:

[0111] ① Select a SiO2 / Si(100) substrate with a size of 1cm×1cm, clean the surface and back side to remove dust particles, organic and inorganic impurities.

[0112] a) Sonicate the SiO2 / Si(100) substrate and glass slide in acetone solution at 40W for 3 minutes, and then rinse with deionized water;

[0113] b) The treated substrate was sonicated in an ethanol solution at 40W for 3 minutes, rinsed with deionized water, and then dried with high-purity N2 gas to obtain the substrate to be sputtered.

[0114] ② Preparations before preparing Sb2Te3 thin films using DC sputtering.

[0115] a) Mount the substrate and Sb2Te3 target, ensuring the target purity reaches 99.99% (atomic percentage), and evacuate the base vacuum to 9 × 10⁻⁶. -5 Pa;

[0116] b) Use high-purity Ar gas as the sputtering gas, adjust the sputtering gas pressure to 0.6 Pa, and keep the distance between the target and the substrate at 70 mm;

[0117] c) Set the DC sputtering power supply to 30W.

[0118] ③ Sb2Te3 nanophase change thin film material was prepared by magnetron sputtering.

[0119] a) Perform pre-sputtering and clean the target surface;

[0120] b) After the target surface is cleaned, the Sb2Te3 film with a thickness of about 172nm is prepared according to the set sputtering time of 1500s and used for in-situ resistivity annealing measurement.

[0121] Figure 1 This diagram shows the in-situ resistivity versus annealing temperature curves for Sb-Te-C phase change memory materials with different C contents and the Sb-Te phase change memory material used in Comparative Example 1, with a heating rate of 9°C / min. ST represents the Sb₂Te₃ material prepared in Comparative Example 1, CST10 represents the thin film material prepared in Example 1 with a DC power of 10W for the C target, CST15 represents the thin film material prepared in Example 2 with a DC power of 15W for the C target, and CST20 represents the thin film material prepared in Example 3 with a DC power of 20W for the C target. 84.43 C 15.57 The thin film material, CST30, indicates that it was prepared under the condition that the DC power supply used for target C in Example 4 was 30W (ST). 80.95 C 19.05 The thin film material, CST60, indicates that it was prepared under the condition that the DC power supply used for target C in Example 5 was 60W (ST). 75.21 C 24.79 The thin film material, CST80, indicates that it was prepared under the condition that the DC power supply used for target C in Example 6 was 80W (ST). 72.30 C 27.70Thin film materials.

[0122] from Figure 1 It can be seen that CST with a high C doping content exhibits significantly larger resistance windows and absolute resistance values ​​compared to ST materials without C doping and CST materials with low C doping. Furthermore, as x increases, the resistance-temperature curve of the Sb-Te-C phase change thin film material gradually becomes more gradual with increasing C doping content. Specifically, when the C doping content x ≥ 15.57, the resistance-temperature curve of the prepared CST material shows a distinctly gradual change characteristic. Simultaneously, the phase transition temperature gradually increases with increasing C doping content. When the carbon doping content x > 15, the phase transition temperature of the phase change memory material is 260℃ ± 20℃, which is significantly higher than the phase transition temperature of undoped Sb₂Te₃.

[0123] Those skilled in the art will readily understand that the above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. An Sb-Te-C phase change memory material with a slowly varying resistance-temperature curve, characterized in that, Its general chemical formula is (Sb i Te j ) 100-x C x Where x, i and j represent atomic percentages, and 15≤x≤30, 30≤i≤50, 50≤j≤70, i+j=100; The Sb-Te-C phase change memory material is an Sb-Te-C phase change thin film material; The phase change thin film material is prepared by magnetron sputtering; the magnetron sputtering is co-sputtering of C target and Sb2Te3 target; wherein the C target is supplied with a DC power supply with a power of 20-80W; In the Sb-Te-C phase change memory material, C atoms exist in the interstitial spaces of the Sb-Te lattice and form chemical bonds with Sb-Te. The resistance curve of the Sb-Te-C phase change memory material as a function of temperature exhibits a slowly varying characteristic.

2. The phase change storage material as described in claim 1, characterized in that, The thickness of the phase change thin film material is 100-250 nm.

3. The Sb-Te-C phase change memory material as described in claim 1, characterized in that, The phase transition temperature of the Sb-Te-C phase change memory material is 260℃±20℃.

4. The Sb-Te-C phase change memory material as described in claim 1, characterized in that, The resistance window of the Sb-Te-C phase change memory material is larger than that of the Sb-Te phase change memory material.

5. The application of the Sb-Te-C phase change memory material as described in any one of claims 1 to 4 in phase change memory.

6. The application of the Sb-Te-C phase change storage material as described in any one of claims 1 to 4 in neuronal devices.

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