Sealing structure, substrate processing apparatus, substrate processing method, and method for manufacturing semiconductor device

Abstract

The sealing structure is a sealing structure for sealing between a first component heated by a heater and a second component disposed opposite to the first component. The sealing structure has: a metal plate disposed in contact with the first component; and a resin-based sealing material disposed in contact with the metal plate and the second component, thereby sealing the first component and the second component through the metal plate and the sealing material.

Description

Technical Field

[0001] This disclosure relates to sealing structures, substrate processing apparatus, substrate processing methods, and methods for manufacturing semiconductor devices. Background Technology

[0002] When forming patterns for semiconductor devices such as flash memory, as a manufacturing process, a process of performing prescribed treatments such as oxidation treatment and nitriding treatment on the substrate is sometimes carried out.

[0003] For example, Japanese Patent Application Publication No. 2014-75579 discloses a method for modifying the surface of a pattern formed on a substrate using a processing gas excited by plasma. A gas supply unit is provided at the top of the processing chamber, configured to supply reactive gas into the processing chamber. Summary of the Invention

[0004] The problem that the invention aims to solve

[0005] In substrate processing apparatuses, sealing structures are sometimes provided to prevent the mixing of gases within the processing apparatus and gas leakage. However, from the viewpoint of the heat resistance of the sealing material, a significant amount of heat released from the heater provided in the substrate processing apparatus is transferred to the sealing material of the sealing structure.

[0006] The purpose of this disclosure is to suppress the heating of the sealing material caused by the heat of the heater.

[0007] Methods for solving problems

[0008] According to one aspect of this disclosure, a sealing structure is provided for sealing between a first component heated by a heater and a second component disposed opposite to the first component. The sealing structure includes: a heat-dissipating metal plate disposed in contact with the first component; and a resin-based sealing material disposed in contact with the metal plate and the second component, thereby sealing the first component and the second component through the metal plate and the sealing material.

[0009] Invention Effects

[0010] According to this disclosure, it is possible to suppress the heating of the sealing material caused by the heat of the heater. Attached Figure Description

[0011] Figure 1 This is a schematic cross-sectional view of a substrate processing apparatus according to one embodiment of the present disclosure.

[0012] Figure 2 This is a diagram showing the structure of the control unit (control unit) of a substrate processing apparatus according to one embodiment of the present disclosure.

[0013] Figure 3This is a flowchart illustrating a substrate processing procedure according to one embodiment of the present disclosure.

[0014] Figure 4 This is an enlarged cross-sectional view showing the sealing structure of one embodiment of the present disclosure.

[0015] Figure 5 This is an enlarged cross-sectional view showing a modified example of the sealing structure according to an embodiment of the present disclosure. Detailed Implementation

[0016] Hereinafter, the methods for implementing this disclosure will be described with reference to the accompanying drawings. Structural elements indicated by the same reference numerals in the various drawings refer to the same or identical structural elements. Furthermore, in the embodiments described below, repeated descriptions and reference numerals are sometimes omitted. Additionally, the drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown in the drawings may not necessarily correspond to reality. Furthermore, the dimensional relationships and ratios of the elements may not be consistent between the various drawings.

[0017] (1) Structure of the substrate processing device

[0018] The following uses Figure 1 The substrate processing apparatus according to the first embodiment of this disclosure will be described. The substrate processing apparatus 100 of this embodiment is configured to perform, for example, oxidation treatment on a film formed on the surface of a substrate. The substrate processing apparatus 100 includes: a processing chamber 201, a heater, a plate 1004 as a first component, a manifold 1006, and a sealing structure 1000.

[0019] The heater is configured to heat the interior of the processing chamber 201. Examples of heaters include the lamp heater 1002 (described later) and the heater 217b disposed on the base 217. The heater 217b is, for example, a resistance heater that generates heat through its own resistance.

[0020] Plate 1004 constitutes the first gas supply section and the second gas supply section, which will be described later. For example, plate 1004 is disposed between lamp heater 1002 and processing chamber 201 of wafer 200, which serves as a substrate, and is a component that allows radiant heat from lamp heater 1002 to pass through into processing chamber 201. At least a portion of plate 1004 is, for example, made of quartz (transparent quartz), a non-metallic transparent material.

[0021] The manifold 1006 and the plate 1004 are arranged opposite each other. The plate 1004 and the manifold 1006 are arranged without contact with each other. Therefore, when the plate 1004 is a quartz component and the manifold 1006 is a metal component, it is possible to prevent the plate 1004 from being damaged due to contact between the two.

[0022] The sealing structure 1000 is a structure that seals the space between the plate 1004 and the manifold 1006.

[0023] (Processing Room)

[0024] The substrate processing apparatus 100 includes a processing furnace 202 for processing a wafer 200, which serves as a substrate, using plasma. A processing container 203 constituting a processing chamber 201 is provided within the processing furnace 202. The processing container 203 has a dome-shaped upper container 210 serving as a first container and a bowl-shaped lower container 211 serving as a second container. The upper container 210 covers the lower container 211, thereby forming the processing chamber 201. The upper container 210 is formed, for example, from a non-metallic material such as alumina (Al₂O₃) or quartz (SiO₂), and the lower container 211 is formed, for example, from aluminum (Al).

[0025] Additionally, a gate valve 244 is provided on the lower side wall of the lower container 211. When open, the gate valve 244 allows the wafer 200 to be fed into the processing chamber 201 via the feed inlet / outlet 245 using a conveying mechanism (not shown), or to be discharged from the processing chamber 201. When closed, the gate valve 244 acts as a shut-off valve to maintain the airtightness of the processing chamber 201.

[0026] The processing chamber 201 includes a plasma generation space 201a around which a resonant coil 212 is arranged, and a substrate processing space 201b communicating with the plasma generation space 201a and processing the wafer 200. The plasma generation space 201a is the space where plasma is generated; it refers to the space within the processing chamber that is located above and below the lower end of the resonant coil 212. On the other hand, the substrate processing space 201b is the space where plasma is used to process the substrate; it refers to the space located below the lower end of the resonant coil 212. In this embodiment, the plasma generation space 201a and the substrate processing space 201b are configured to have approximately the same horizontal diameter.

[0027] (Base)

[0028] A base 217 constituting the substrate mounting section (substrate mounting stage) for mounting the wafer 200 is disposed at the center of the bottom side of the processing chamber 201. The base 217 is formed of non-metallic materials such as aluminum nitride (AlN), ceramic, or quartz.

[0029] A heater 217b, serving as a heating mechanism, is integrally embedded inside the base 217. The heater 217b is configured to heat the surface of the wafer 200 to, for example, about 25°C to 750°C when powered.

[0030] The base 217 is electrically insulated from the lower container 211. An impedance adjustment electrode 217c is disposed inside the base 217 and grounded via an impedance variable mechanism 275, which serves as an impedance adjustment unit. The impedance variable mechanism 275 consists of a coil and a variable capacitor, configured to change the impedance by controlling the inductance and resistance of the coil and the capacitance of the variable capacitor. Therefore, the potential (bias voltage) of the wafer 200 can be controlled via the impedance adjustment electrode 217c and the base 217. Furthermore, in this embodiment, bias voltage control using the impedance adjustment electrode 217c can be arbitrarily selected.

[0031] A base lifting mechanism 268 with a drive mechanism for raising and lowering the base is provided on the base 217. Additionally, a through hole 217a is provided on the base 217, and a wafer ejector pin 266 is provided on the bottom surface of the lower container 211. At least three through holes 217a and wafer ejector pins 266 are provided at mutually opposing positions. When the base 217 is lowered by the base lifting mechanism 268, the wafer ejector pin 266 is configured to pass through the through hole 217a.

[0032] The substrate mounting portion of this embodiment mainly consists of a base 217, a heater 217b, and an electrode 217c.

[0033] (First Gas Supply Department)

[0034] Hereinafter, the gas supplied from the first gas supply unit will be referred to as the first gas. A plate 1004 is provided above the center of the processing chamber 201. Figure 4 As shown, a manifold 1006 is disposed opposite to the plate 1004 in the vertical direction around the periphery of the plate 1004.

[0035] like Figure 4 As shown, plate 1004 is placed on the end edge 203b of the opening 203a above the processing container 203. Specifically, a flange 1004f is formed on the periphery of plate 1004, which engages with end edge 203b, thereby placing plate 1004 on end edge 203b. The main parts of plate 1004, except for flange 1004f, are arranged to block opening 203a.

[0036] A manifold 1006 is mounted on the processing container 203. The manifold 1006 and the processing container 203 are sealed by an O-ring 1014. A cover 1012, for example made of transparent quartz, is provided above the manifold 1006. The manifold 1006 and the cover 1012 are sealed by an O-ring 1016. A lamp heater 1002 is provided above the cover 1012. Radiant heat from the lamp heater 1002 reaches the processing chamber 201 through the cover 1012 and the plate 1004.

[0037] Plate 1004 is heated by lamp heater 1002 and heater 217b. It may also be indirectly heated due to heat conduction from the contacting processing container 203. Furthermore, it may be heated by plasma generated by the plasma generation unit, which will be described later.

[0038] A first buffer space 1018, into which the first gas is supplied, is defined by the flange 1004f of the plate 1004, the processing container 203, the manifold 1006, and the metal plate 1008 (described later). The first buffer space 1018 is formed in a ring shape around the plate 1004. During substrate processing, the first buffer space 1018 becomes a space after depressurization. The first gas is supplied to the first buffer space 1018 through the gas inlet passage 1020 formed in the manifold 1006. In addition, a first gas outlet hole 1022 is formed in the plate 1004, through which the first gas can be supplied from the first buffer space 1018 into the processing chamber 201.

[0039] The downstream end of the oxygen-containing gas supply pipe 232a (for oxygen-containing gas), the downstream end of the hydrogen-containing gas supply pipe 232b (for hydrogen-containing gas), and the inert gas supply pipe 232c (for inert gas) are connected to the gas inlet path 1020 in a confluence manner. The oxygen-containing gas supply pipe 232a is equipped with an oxygen-containing gas supply source 250a, a mass flow controller (MFC) 252a (for flow control), and a valve 253a (for on / off control). The hydrogen-containing gas supply pipe 232b is equipped with a hydrogen-containing gas supply source 250b, an MFC 252b, and a valve 253b. The inert gas supply pipe 232c is equipped with an inert gas supply source 250c, an MFC 252c, and a valve 253c. A valve 243a is located downstream of the confluence of the oxygen-containing gas supply pipes 232a, 232b, and 232c, and is connected to the upstream end of the gas inlet path 1020. The configuration allows valves 253a, 253b, 253c, and 243a to open and close, and MFCs 252a, 252b, and 252c to adjust the flow rate of their respective gases. It can also supply oxygen-containing gas, hydrogen-containing gas, and inactive gas to the processing chamber 201 via oxygen-containing gas supply pipe 232a, hydrogen-containing gas supply pipe 232b, and inactive gas supply pipe 232c.

[0040] The first gas supply unit (first gas supply system) of this embodiment mainly consists of a first gas outlet 1022, an oxygen-containing gas supply pipe 232a, a hydrogen-containing gas supply pipe 232b, an inactive gas supply pipe 232c, MFCs 252a, 252b, and 252c, and valves 253a, 253b, 253c, and 243a. The first gas supply unit is configured to supply gas, which serves as an oxygen-containing oxidizing seed source, into the processing chamber 201.

[0041] (Second Gas Supply Department)

[0042] Hereinafter, the gas supplied from the second gas supply unit will be referred to as the second gas. For example... Figure 1 As shown, it consists of a cover 1012, a plate 1004, a manifold 1006, and a metal plate 1008 (described later). Figure 4 A second buffer space 1028 is defined to receive the second gas. During substrate processing, the second buffer space 1028 is a space after pressure reduction. The second gas is supplied to the second buffer space 1028 through a gas inlet path 1030 formed in the manifold 1006. A second gas outlet 1004a is formed in the center of the plate 1004, through which the second gas can be supplied from the second buffer space 1028 into the processing chamber 201.

[0043] The downstream end of the oxygen-containing gas supply pipe 232d (for oxygen-containing gas), the downstream end of the hydrogen-containing gas supply pipe 232e (for hydrogen-containing gas), and the inactive gas supply pipe 232f (for inactive gas) are connected to the gas inlet path 1030 in a confluence manner. An oxygen-containing gas supply source 250d, an MFC 252d, and a valve 253d are installed in the oxygen-containing gas supply pipe 232d. A hydrogen-containing gas supply source 250e, an MFC 252e, and a valve 253e are installed in the hydrogen-containing gas supply pipe 232e. An inactive gas supply source 250f, an MFC 252f, and a valve 253f are installed in the inactive gas supply pipe 232f. A valve 243c is installed downstream of the confluence of the oxygen-containing gas supply pipes 232d, the hydrogen-containing gas supply pipe 232e, and the inactive gas supply pipe 232f, and is connected to the upstream end of the gas inlet path 1030. The configuration involves opening and closing valves 253d, 253e, 253f, and 243c, adjusting the flow rate of each gas using MFCs 252d, 252e, and 252f, and supplying processing gases such as oxygen-containing gas, hydrogen-containing gas, and inactive gas to the processing chamber 201 via oxygen-containing gas supply pipe 232d, hydrogen-containing gas supply pipe 232e, and inactive gas supply pipe 232f.

[0044] The second gas supply unit (second gas supply system) of this embodiment mainly consists of a second gas outlet 1004a, an oxygen-containing gas supply pipe 232d, a hydrogen-containing gas supply pipe 232e, an inactive gas supply pipe 232f, MFCs 252d, 252e, and 252f, and valves 253d, 253e, 253f, and 243c. The second gas supply unit is configured to supply hydrogen concentration adjusting gas to the processing chamber 201 for adjusting the hydrogen concentration containing hydrogen.

[0045] The second gas supply unit is configured to supply a second gas to a first region, i.e., the outer peripheral region, within the plasma generation space 201a (described later) along the inner wall of the processing chamber 201. The first gas supply unit is configured to supply a first gas to a second region, i.e., the central region, within the plasma generation space 201a, which is surrounded by the outer peripheral region.

[0046] The mixing ratio (flow rate ratio) of oxygen-containing gas and hydrogen-containing gas and their total flow rate can be adjusted for the first gas and the second gas, respectively, according to the first gas supply unit and the second gas supply unit. Therefore, the mixing ratio of oxygen-containing gas and hydrogen-containing gas and their total flow rate supplied to each area of ​​the outer peripheral area and the central area within the processing chamber 201 can be adjusted.

[0047] (Exhaust section)

[0048] A gas exhaust port 235 is provided on the side wall of the lower container 211 to discharge reaction gases and the like from the processing chamber 201. The gas exhaust port 235 is connected to the upstream end of the gas exhaust pipe 231. The gas exhaust pipe 231 is equipped with an APC (Auto Pressure Controller) valve 24b as a pressure regulator, a valve 243b as an on / off valve, and a vacuum pump 246 as a vacuum exhaust device.

[0049] The exhaust section of this embodiment mainly consists of a gas exhaust port 235, a gas exhaust pipe 231, an APC valve 242, and a valve 243b. Alternatively, a vacuum pump 246 may be included in the exhaust section.

[0050] (Plasma Generation Unit)

[0051] On the outer periphery of the processing chamber 201, that is, on the outer side of the side wall of the upper container 210, a spiral resonant coil 212, serving as a high-frequency electrode, is provided in a manner that surrounds the processing chamber 201. The resonant coil 212 is connected to the RF sensor 272, the high-frequency power supply 273, and the matching unit 274 that matches the impedance and output frequency of the high-frequency power supply 273.

[0052] A high-frequency power supply 273 supplies high-frequency power (RF power) to the resonant coil 212. An RF sensor 272 is located on the output side of the high-frequency power supply 273 to monitor the information of the supplied high-frequency traveling wave and reflected wave. The reflected wave power monitored by the RF sensor 272 is input to a matching converter 274. The matching converter 274 controls the impedance of the high-frequency power supply 273 and the frequency of the output high-frequency power according to the reflected wave information input from the RF sensor 272, so as to minimize the reflected wave.

[0053] In order to form a standing wave of a specified wavelength, the resonant coil 212 has its winding diameter, winding spacing, and number of turns set in a manner that allows it to resonate at a certain wavelength. That is, the electrical length of the resonant coil 212 is set to be an integer multiple of one wavelength at a specified frequency of the high-frequency power supplied from the high-frequency power source 273.

[0054] Specifically, considering the applied power, the strength of the generated magnetic field, and the shape of the applied device, the resonant coil 212 is, for example, subjected to a high-frequency power of 0.1 to 5 kW at a frequency of 800 kHz to 50 MHz, with a coil diameter of 200 to 500 mm, and wound approximately 2 to 60 turns around the outer periphery of the plasma generation space 201a. Furthermore, the expression of a numerical range such as "800 kHz to 50 MHz" in this specification means that the lower and upper limits are included within this range. For example, "800 kHz to 50 MHz" means "above 800 kHz and below 50 MHz." The same applies to other numerical ranges.

[0055] The shielding plate 223 is provided to shield the electric field outside the resonant coil 212.

[0056] The plasma generation unit of this embodiment mainly consists of a resonant coil 212, an RF sensor 272, and a matching unit 274. Furthermore, a high-frequency power supply 273 may also be included as the plasma generation unit.

[0057] According to this structure, high-frequency power is supplied to the resonant coil 212, thereby generating an annular plasma in the region near the resonant coil 212 and along the inner periphery of the processing chamber 201. That is, the annular plasma is generated in the outer periphery region within the processing chamber 201. In particular, in this embodiment, the annular plasma is generated at the height of the electrical midpoint of the resonant coil 212, that is, at the midpoint between the upper and lower ends of the resonant coil 212.

[0058] (Sealed structure)

[0059] exist Figure 4 In this structure, the sealing structure 1000 is a structure that seals the space between the plate 1004 (first component) and the manifold 1006 (second component), and includes a metal plate 1008 and an O-ring 1010 made of resin as the sealing material. The metal plate 1008 and the O-ring 1010 seal the space between the plate 1004 and the manifold 1006. The flange portion 1004f of the plate 1004 is also a contact portion that contacts the metal plate 1008. The manifold 1006 is, for example, a metal component.

[0060] Furthermore, examples of resin materials for forming the O-ring 1010 include silicone rubber, fluororubber, and other rubber materials, but they are not limited to rubber materials; other elastic resin materials that function as sealing materials can also be used. Additionally, in this method, the O-ring is used as the sealing material, but it is not limited to a ring shape; it can also be a plate, rod, or other shape, as long as it functions as a sealing material.

[0061] The metal plate 1008 is formed in a ring shape and is fixed to the manifold 1006 at a position away from the O-ring 1010. Specifically, it is fixed to the manifold 1006, for example, by a metal bolt 1024. The center of the bolt 1024 is axially oriented to allow for vacuuming within the threaded hole. In the illustrated example, a sealing spacer 1026 is disposed between the metal plate 1008 and the manifold 1006. In this case, the metal plate 1008 and the manifold 1006 are also in contact via the bolt 1024. Since the metal plate 1008, the manifold 1006, and the bolt 1024 are all metal components, heat from the metal plate 1008 is transferred to the manifold 1006 via the bolt 1024. Furthermore, since the metal plate 1008 is fixed to the manifold 1006 at a position away from the O-ring 1010, it is possible to prevent the O-ring 1010 from being heated by heat transferred from the metal plate 1008 to the manifold 1006.

[0062] To prevent breakage when plate 1004 is a quartz component, it is preferable that metal plate 1008 be thin. Specifically, the thickness of metal plate 1008 is, for example, a specified value in the range of 0.1 to 1.0 mm. When the thickness of metal plate 1008 is less than 0.1 mm, the possibility of breakage of metal plate 1008 itself increases due to contact with plate 1004 and bolt 1024, and it is difficult to conduct heat to manifold 1006 and bolt 1024 to suppress the temperature rise of O-ring 1010. By setting it to 0.1 mm or more, breakage of metal plate 1008 itself can be prevented, and the temperature rise of O-ring 1010 can be suppressed. When the thickness of metal plate 1008 exceeds 1.0 mm, the elasticity of metal plate 1008 decreases, and therefore, breakage of the contacted quartz component, i.e., plate 1004, is possible. By setting it to 1.0 mm or less, the elasticity of metal plate 1008 can be maintained, and breakage of plate 1004 can be suppressed. Alternatively, the metal plate 1008 can also be formed from at least one of aluminum, nickel alloy, and stainless steel.

[0063] Alternatively, the sealing spacer 1026 can be omitted. In this case, the metal plate 1008 is in direct planar contact with the manifold 1006, so the heat of the metal plate 1008 can be easily transferred to the manifold 1006.

[0064] In the absence of a metal plate 1008, the O-ring 1010 is heated primarily by (a) radiant heat emitted from at least one of the lamp heaters 1002 and 217b and transmitted through at least one of the plates 1004 and the processing container 203, (b) radiant heat emitted from at least one of the heated plates 1004 and the processing container 203, and (c) conductive heat transferred from the contact surface with the heated plates 1004.

[0065] A metal plate 1008 is disposed between the heater 217b and the O-ring 1010, and is configured to shield the O-ring 1010 from the radiant heat of the heater 217b radiating directly or indirectly toward the O-ring 1010 from below. Additionally, the metal plate 1008 is configured to shield the O-ring 1010 from the radiant heat from the lamp heater 1002 (… Figure 1 Radiant heat radiated directly or indirectly toward the O-ring 1010. That is, the metal plate 1008 is configured to shield the O-ring from the effects of the heat sources (a) and (b) mentioned above.

[0066] The manifold 1006 is cooled by a cooling mechanism. Specifically, a refrigerant flow path 1032, which serves as the cooling mechanism, is provided in the manifold 1006. By allowing refrigerant to flow through the refrigerant flow path 1032, heat from the manifold 1006 can be removed. Therefore, heat from the metal plate 1008 is efficiently removed via the manifold 1006. That is, the metal plate 1008 is configured to insulate the O-ring 1010 from the aforementioned heat source (c).

[0067] In addition, such as Figure 5 As shown, plate 1004 can also be constructed by combining an inner peripheral portion 1004b and an outer peripheral portion 1004c. The inner peripheral portion 1004b is, for example, a transparent portion made of transparent quartz. The outer peripheral portion 1004c is formed into a cylindrical or annular shape and is mounted in such a way that it is locked to the end edge 203b of the opening 203a of the processing container 203. The inner peripheral portion 1004b is formed into a circular plate shape and is disposed in contact with the stepped portion 1004d of the outer peripheral portion 1004c. The outer peripheral portion 1004c is also a contact portion that contacts the metal plate 1008.

[0068] Furthermore, the outer peripheral portion 1004c is an opaque portion made of an opaque material, such as opaque quartz, that obstructs the transmission of radiant heat from the lamp heater 1002. By using the opaque material as the contact portion of the outer peripheral portion 1004c, the radiant heat reaching the metal plate 1008, O-ring 1010, and manifold 1006 through the outer peripheral portion 1004c can be reduced. In addition, by making the opaque portion contact the metal plate 1008, the O-ring 1010 can be prevented from being heated by the opaque portion that is heated by radiant heat.

[0069] (Control Department)

[0070] The controller 221, as the control unit, is configured to control APC valves 242 and 243b and vacuum pump 246 via signal line A, base lifting mechanism 268 via signal line B, heater power adjustment mechanism 276 and impedance variable mechanism 275 via signal line C, gate valve 244 via signal line D, RF sensor 272, high-frequency power supply 273 and matching device 274 via signal line E, and MFCs 252a-252f and valves 253a-253f, 243a and 243c via signal line F.

[0071] like Figure 2 As shown, the controller 221, serving as the control unit (control unit), is configured as a computer having a CPU (Central Processing Unit) 221a, RAM (Random Access Memory) 221b, a storage device 221c, and an I / O port 221d. The RAM 221b, storage device 221c, and I / O port 221d are configured to exchange data with the CPU 221a via an internal bus 221e. The controller 221 is connected to an input / output device 222, such as a touch panel or a display.

[0072] The storage device 221c is configured such as flash memory or HDD (Hard Disk Drive). The storage device 221c stores, in a readable manner, a control program that controls the operation of the board processing apparatus, and a program process that describes the board processing procedures and conditions described later. The process process is a combination of methods that enable the controller 221 to execute each process in the board processing steps described later to obtain a predetermined result, and functions as a program. Hereinafter, the program process, control program, etc., will also be collectively referred to as a program. Furthermore, when using the term "program" in this specification, sometimes only the program process unit is included, sometimes only the control program unit is included, or sometimes both are included. Additionally, RAM 221b is configured as a memory area (working area) that temporarily holds the program, data, etc., read by the CPU 221a.

[0073] I / O port 221d is connected to the aforementioned MFC252a~252f, valves 253a~253f, 243a, 243b, 243c, gate valve 244, APC valve 242, vacuum pump 246, RF sensor 272, high-frequency power supply 273, matching unit 274, base lifting mechanism 268, impedance variable mechanism 275, heater power adjustment mechanism 276, etc.

[0074] CPU 221a is configured to read and execute the control program from storage device 221c, and read the process from storage device 221c based on inputs such as operation commands from input / output device 222. Furthermore, the CPU221a is configured to, according to the read process information, control the opening adjustment of the APC valve 242, the opening and closing of the valve 243b, and the start and stop of the vacuum pump 246 via I / O port 221d and signal line A; control the lifting action of the base lifting mechanism 268 via signal line B; control the power supply adjustment action of the heater 217b based on the heater power adjustment mechanism 276 and the impedance value adjustment action based on the impedance variable mechanism 275 via signal line C; control the opening and closing action of the gate valve 244 via signal line D; control the operation of the RF sensor 272, the matching device 274, and the high-frequency power supply 273 via signal line E; and control the flow adjustment action of various gases based on MFC 252a~252f and the opening and closing action of valves 253a~253f, 243a, and 243c via signal line F.

[0075] The controller 221 is configured to install the aforementioned program stored in an external storage device (e.g., magnetic tape, floppy disk, hard disk, CD, DVD, MO, USB memory, memory card, etc.) 223 onto a computer. The storage device 221c and the external storage device 223 constitute a computer-readable recording medium. Hereinafter, they will be collectively referred to as recording media. In this specification, when the term "recording medium" is used, sometimes only the storage device 221c is included, sometimes only the external storage device 223 is included, or sometimes both are included. Furthermore, providing the program to the computer may also be done without using the external storage device 223, but using communication means such as the Internet or dedicated lines.

[0076] (Method for manufacturing semiconductor devices)

[0077] The method for manufacturing a semiconductor device includes a step of transferring a substrate into the processing chamber 201 of a substrate processing apparatus 100 (e.g., Figure 3 The substrate loading process S110) and the process of heating the wafer 200 using a lamp heater 1002, etc., as a heater (e.g. Figure 3 The heating and vacuum exhaust process S120.

[0078] The substrate processing apparatus 100 includes: a processing chamber 201 for processing a wafer 200; a lamp heater 1002 configured to heat the processing chamber 201; a plate 1004 heated by the lamp heater 1002 and serving as a first component; a manifold 1006 disposed opposite to the plate 1004; and a sealing structure 1000 for sealing the plate 1000 and the manifold 1006. The sealing structure 1000 includes: a heat dissipation metal plate 1008 disposed in contact with the plate 1000; and a resin-made O-ring 1010 disposed in contact with the metal plate 1008 and the manifold 1006 as a sealing material. The plate 1000 and the manifold 1006 are sealed by the metal plate 1008 and the O-ring 1010.

[0079] (2) Substrate processing process

[0080] Next, regarding the substrate processing step of this embodiment, using the substrate processing apparatus 100 described above as a step in the manufacturing process of semiconductor devices such as flash memory, an example of a method for forming an oxide film by oxidizing a film formed on the surface of the wafer 200 will be described. In the following description, the operation of each part constituting the substrate processing apparatus 100 is controlled by the controller 221.

[0081] (Substrate handling process S110)

[0082] First, the aforementioned wafer 200 is moved into and housed within the processing chamber 201. Specifically, the base lifting mechanism 268 lowers the base 217 to the wafer 200 transport position. As a result, the wafer lifting pin 266 protrudes from the through-hole 217a by a predetermined height above the surface of the base 217.

[0083] Next, gate valve 244 is opened, and wafer 200 is moved into processing chamber 201 from a vacuum transfer chamber adjacent to processing chamber 201 using a wafer transfer mechanism (not shown). The moved wafer 200 is supported horizontally on wafer lifting pin 266. After the wafer 200 is moved into processing chamber 201, gate valve 244 is closed to seal processing chamber 201. Furthermore, base lifting mechanism 268 raises base 217, thereby supporting wafer 200 on the upper surface of base 217.

[0084] (Heating and vacuum exhaust process S120)

[0085] Next, the wafer 200, which has been moved into the processing chamber 201, is heated. The heater 217b is preheated, and the wafer 200 is heated to a predetermined value, for example, within the range of 150 to 750°C, by holding the wafer 200 on the base 217 where the heater 217b is embedded. The processing chamber 201 is also heated by the lamp heater 1002. Furthermore, during the heating of the wafer 200, a vacuum pump 246 is used to evacuate the processing chamber 201 via a gas exhaust pipe 231, setting the pressure inside the processing chamber 201 to a predetermined value. The vacuum pump 246 operates at least until the substrate removal process S160, described later, is completed.

[0086] At this time, as Figure 4 As shown, the metal plate 1008 and the O-ring 1010 in the sealing structure 1000 seal the space between the plate 1004 and the manifold 1006. Therefore, with the metal plate 1008 positioned between the plate 1004, which is heated by a heater such as the lamp heater 1002, and the O-ring 1010, radiant heat from the heater and the plate 1004 to the O-ring 1010 can be shielded, thus suppressing the temperature rise of the O-ring 1010 and the associated deterioration.

[0087] Furthermore, the metal plate 1008 is formed in a ring shape and is fixed in contact with the manifold 1006 at a position away from the O-ring 1010. Therefore, heat from the metal plate 1008 can be conducted to the manifold 1006, suppressing the temperature rise of the metal plate 1006.

[0088] Furthermore, the manifold 1006 is cooled by a cooling mechanism. Therefore, the O-ring 1010 and the metal plate 1008 that are in contact with the manifold 1006 can be cooled, suppressing the temperature rise of the O-ring 1010.

[0089] Furthermore, the sealing structure 100 can be appropriately used when the pressure of the first buffer space 1018 and the second buffer space 1028 is reduced. Even when the pressure is reduced and can be sealed by using the metal plate 1008, by making the first buffer space 1018 and the second buffer space 1028 depressurization (vacuum) spaces, gas leakage between the first buffer space 1018 and the second buffer space 1028 can be prevented, and separation can be maintained.

[0090] (Reaction gas supply process S130)

[0091] Next, a mixture of oxygen-containing gas and hydrogen-containing gas is supplied from the first gas supply unit to the outer periphery of the processing chamber 201 as a first gas, which is an oxygen-containing oxidizing seed gas. Specifically, valves 253a and 253b are opened, and while the flow is controlled by MFCs 252a and 252b, the first gas is supplied into the processing chamber 201 through the gas outlet 239.

[0092] As an oxygen-containing gas, examples include oxygen (O2), nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), ozone (O3), water vapor (H2O), carbon monoxide (CO), and carbon dioxide (CO2). One or more of these can be used as the oxygen-containing gas. Similarly, as a hydrogen-containing gas, examples include hydrogen (H2), deuterium (D2), H2O, and ammonia (NH3). One or more of these can be used as the hydrogen-containing gas. Furthermore, when using H2O as the oxygen-containing gas, it is preferable to use a gas other than H2O as the hydrogen-containing gas. As an inert gas, nitrogen (N2) can be used, and rare gases such as argon (Ar), helium (He), neon (Ne), and xenon (Xe) can also be used. One or more of them can be used as inactive gases.

[0093] By utilizing MFC252a and MFC252b for flow control, at least one of the total flow rate of the first gas and the composition of the first gas (particularly the hydrogen content) can be adjusted. In this embodiment, the composition of the first gas can be easily adjusted by changing the mixing ratio (flow rate ratio) of the hydrogen-containing gas and the oxygen-containing gas.

[0094] At this time, the total flow rate of the first gas is set to, for example, 1000~10000 sccm, and the flow rate of the oxygen-containing gas in the first gas is set to a predetermined value within the range of, for example, 20~4000 sccm. Additionally, the flow rate of the hydrogen-containing gas in the first gas is set to a predetermined value within the range of, for example, 20~1000 sccm. The ratio of hydrogen-containing gas to oxygen-containing gas in the first gas is set to a predetermined value within the range of 0:100~95:5.

[0095] Preferably, the first gas is directly supplied to the outer peripheral region of the processing chamber 201, that is, the region where annular plasma is generated in the plasma processing step S140 described later.

[0096] Simultaneously, a mixture of oxygen-containing gas and hydrogen-containing gas, serving as a hydrogen concentration adjustment gas (i.e., the second gas), is supplied from the second gas supply unit to the central region of the processing chamber 201. Specifically, valves 253d and 253e are opened, and while flow control is performed using MFCs 252d and 252e, the second gas is supplied to the processing chamber 201 through the gas outlet 303 provided in the gas supply ring 300.

[0097] By utilizing MFC252d and MFC252e for flow control, at least one of the total flow rate of the second gas and the composition of the second gas (particularly the hydrogen content) can be adjusted. Similar to the first gas, the composition of the second gas can be easily adjusted by changing the mixing ratio of the hydrogen-containing gas and the oxygen-containing gas.

[0098] At this time, the total flow rate of the second gas is equal to or less than the total flow rate of the first gas, for example, set to 100 to 5000 sccm, and the flow rate of the oxygen-containing gas in the second gas is set to a predetermined value within the range of 0 to 5000 sccm. Additionally, the flow rate of the hydrogen-containing gas in the second gas is set to a predetermined value within the range of 0 to 5000 sccm. In this embodiment, the ratio of hydrogen-containing gas in the second gas (i.e., the hydrogen content of the first gas) is set to a predetermined value within the range of 0 to 100%. Preferably, the total flow rate of the second gas is equal to or less than that of the first gas.

[0099] (Hydrogen concentration distribution control)

[0100] In this process, for each of the first gas and the second gas, at least one of the flow rate and the hydrogen content is controlled, thereby enabling control of the hydrogen concentration distribution within the processing chamber 201. The hydrogen concentration distribution is controlled to achieve the desired density distribution of the oxide species in the plasma processing step described later. The hydrogen content of the second gas is preferably adjusted to be different from that of the first gas. By using a second gas with a hydrogen content different from that of the first gas, and controlling the flow rates of the first and second gases respectively, the hydrogen concentration distribution within the processing chamber 201 can be easily adjusted.

[0101] The opening of APC valve 242 is adjusted to control the venting inside processing chamber 201 so that the pressure inside processing chamber 201 is within a specified range, for example, 5 to 260 Pa. In this way, venting is carried out appropriately inside processing chamber 201, and the first gas and the second gas are continued to be supplied until the plasma processing step S140 described later is completed.

[0102] (Plasma treatment process S140)

[0103] If the pressure inside the processing chamber 201 stabilizes, high-frequency power is applied to the resonant coil 212 from the high-frequency power supply 273. This creates a high-frequency electromagnetic field within the plasma generation space 201a, which is supplied with the first gas. This electromagnetic field excites a ring-shaped induced plasma with the highest plasma density at a height corresponding to the electrical midpoint of the resonant coil 212 within the plasma generation space. The plasma-like first gas dissociates, generating oxygen radicals including O radicals, hydroxyl radicals (OH radicals), atomic oxygen (O), O3, oxygen ions, and other oxidation species.

[0104] In this process, a first gas is supplied to the region where plasma is generated at a second plasma density, i.e., the plasma generation region. In this embodiment, the first gas is supplied to the outer periphery of the processing chamber 201 near the resonant coil 212, and to the region where annular plasma is excited, i.e., the plasma generation region. The aforementioned oxide species are mainly generated by plasma excitation of the first gas.

[0105] On the other hand, in this process, a second gas is supplied to regions where plasma is generated at a second plasma density lower than the first plasma density, or to regions where no plasma is generated (regions where the second plasma density is essentially 0), i.e., plasma non-generating regions. That is, a second gas is supplied to regions where the plasma density differs from that of the first gas. In this embodiment, the second gas is particularly supplied to plasma non-generating regions formed inside the annular plasma.

[0106] (Density distribution control of oxidized seeds)

[0107] Here, when the oxidants generated by the plasma react with hydrogen in the atmosphere, they lose or reduce their ability to act as oxidants (oxidizing capacity) (i.e., deactivation). Therefore, the rate of decay (attenuation amount) of the density (concentration) of the oxidants in the atmosphere varies depending on the hydrogen concentration in the atmosphere where the oxidants are present. The higher the hydrogen concentration, the greater the attenuation amount of the oxidants; the lower the hydrogen concentration, the smaller the attenuation amount of the oxidants.

[0108] In this embodiment, when the oxide seeds generated in the plasma-generating region diffuse into the non-plasma-generating region, they react with hydrogen in the non-plasma-generating region and gradually become deactivated. Therefore, the density of oxide seeds diffusing in the non-plasma-generating region can be adjusted according to the hydrogen concentration in that region to control its attenuation rate. That is, the density distribution of oxide seeds in the non-plasma-generating region can be arbitrarily adjusted by controlling the hydrogen concentration distribution in that region.

[0109] Specifically, in the aforementioned reactive gas supply process, the hydrogen concentration distribution in the in-plane direction of the wafer 200 within the non-plasma generation region is controlled by adjusting at least one of the flow rate of the second gas primarily supplied to the non-plasma generation region or the hydrogen content. Furthermore, by controlling this hydrogen concentration distribution, the density distribution of oxide seeds diffusing in the space above the wafer 200 is adjusted. The oxide seeds with this adjusted in-plane density distribution are then supplied to the surface of the wafer 200.

[0110] Afterwards, if the prescribed processing time has elapsed, for example, 10 to 900 seconds, the power output from the high-frequency power supply 273 is stopped, and the plasma discharge within the processing chamber 201 is halted. Additionally, valves 253a, 253b, 253d, and 253e are closed to stop the supply of the first and second gases to the processing chamber 201. With these steps completed, the plasma processing step S140 is finished.

[0111] (Vacuum exhaust process S150)

[0112] If the supply of the first and second gases is stopped, a vacuum is vented from the processing chamber 201 via the gas exhaust pipe 231. This vents the oxygen-containing gas, hydrogen-containing gas, and waste gases generated from the reaction of these gases from the processing chamber 201 to the outside. Then, the opening of the APC valve 242 is adjusted to bring the pressure inside the processing chamber 201 to the same level as the vacuum transport chamber adjacent to it.

[0113] (Substrate removal process S160)

[0114] Next, the base 217 is lowered to the wafer 200 transport position, and the wafer 200 is supported on the wafer lifting pin 266. Then, the gate valve 244 is opened, and the wafer transport mechanism is used to move the wafer 200 out of the processing chamber 201. The above completes the substrate processing process of this embodiment.

[0115] [Other Implementation Methods]

[0116] The above describes one example of an embodiment of the present disclosure. However, the embodiments of the present disclosure are not limited to the above content. In addition to the above content, various modifications can be made without departing from its spirit.

[0117] The publication of Japanese Patent Application No. 2020-159107, filed on September 23, 2020, is incorporated herein by reference in its entirety.

[0118] All documents, patent applications and technical standards described in this specification are incorporated herein by reference to each document, patent application and technical standard to the same extent as those described separately.

Claims

1. A sealing structure that seals between a first component heated by a heater and a second component disposed opposite to the first component, characterized in that, The sealing structure has: A metal plate, which is disposed in contact with the first component; A resin-based sealing material is disposed in contact with the metal plate and the second component. The first component and the second component are sealed using the metal plate and the sealing material. The sealing structure is configured to seal between a first buffer space formed above the first component and supplied with a first gas and a second buffer space formed between the first component and the second component and supplied with a second gas.

2. The sealing structure according to claim 1, characterized in that, The metal plate is fixed in place by contact with the second component at a position away from the sealing material.

3. The sealing structure according to claim 1 or 2, characterized in that, The second component is cooled by a cooling mechanism.

4. The sealing structure according to claim 1, characterized in that, The metal plate is configured to shield the radiant heat from the heater to the sealing material.

5. The sealing structure according to claim 1 or 2, characterized in that, The heater includes a lamp heater.

6. The sealing structure according to claim 5, characterized in that, The heater includes a resistance heater.

7. The sealing structure according to claim 1 or 2, characterized in that, The first component is disposed between the heater and the processing chamber of the substrate, and is composed of a plate that allows radiant heat from the heater to pass through into the processing chamber.

8. The sealing structure according to claim 7, characterized in that, The first component consists of a plate that allows radiant heat from the heater to pass through into the processing chamber and a contact portion that contacts the metal plate.

9. The sealing structure according to claim 1, characterized in that, The sealing structure is configured to seal the first buffer space after depressurization and the second buffer space after depressurization.

10. The sealing structure according to claim 1 or 2, characterized in that, The first component and the second component are configured without contact with each other.

11. The sealing structure according to claim 1 or 2, characterized in that, The second component is made of metal.

12. The sealing structure according to claim 1 or 2, characterized in that, The first component is made of non-metallic material.

13. The sealing structure according to claim 12, characterized in that, At least a portion of the first component is made of a transparent material.

14. The sealing structure according to claim 11, characterized in that, The first component is composed of a transparent portion and an opaque portion. The transparent portion is formed of a transparent material that allows the radiant heat of the heater to pass through, and the opaque portion is formed of an opaque material that prevents the radiant heat of the heater from passing through.

15. The sealing structure according to claim 14, characterized in that, The metal plate is configured to contact the opaque portion.

16. The sealing structure according to claim 1 or 2, characterized in that, The thickness of the metal plate is a specified value in the range of 0.1 to 1.0 mm.

17. A substrate processing apparatus, characterized in that, have: The processing chamber is where the substrate is processed; A heater configured to heat the processing chamber; The first component is heated by the heater; The second component is configured opposite to the first component; A sealing structure that seals the space between the first component and the second component. The sealing structure has: A metal plate, which is disposed in contact with the first component; A resin-based sealing material is disposed in contact with the metal plate and the second component. The first component and the second component are sealed together by the metal plate and the sealing material. The sealing structure is configured to seal between a first buffer space formed above the first component and supplied with a first gas and a second buffer space formed between the first component and the second component and supplied with a second gas.

18. A substrate processing method, characterized in that, have: The process of moving a substrate into the processing chamber of a substrate processing apparatus; The process of heating the substrate using a heater. The substrate processing apparatus includes: The first component is heated by the heater; The second component is configured opposite to the first component; A sealing structure that seals the space between the first component and the second component. The sealing structure has: A metal plate, which is disposed in contact with the first component; A resin-based sealing material is disposed in contact with the metal plate and the second component. The first component and the second component are sealed together by the metal plate and the sealing material. The substrate processing method includes a step of supplying a first gas and a second gas into the processing chamber. The sealing structure is configured to seal between a first buffer space formed above the first component and supplied with a first gas and a second buffer space formed between the first component and the second component and supplied with a second gas.

19. A method for manufacturing a semiconductor device, characterized in that, have: The process of moving a substrate into the processing chamber of a substrate processing apparatus; The process of heating the substrate using a heater. The substrate processing apparatus includes: The first component is heated by the heater; The second component is configured opposite to the first component; A sealing structure that seals the space between the first component and the second component. The sealing structure has: A metal plate, which is disposed in contact with the first component; A resin-based sealing material is disposed in contact with the metal plate and the second component. The first component and the second component are sealed together by the metal plate and the sealing material. The manufacturing method includes the step of supplying a first gas and a second gas into the processing chamber. The sealing structure is configured to seal between a first buffer space formed above the first component and supplied with a first gas and a second buffer space formed between the first component and the second component and supplied with a second gas.

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