Impedance circle-based method and device for evaluating stability of ZnO varistor ceramic

Abstract

The application discloses a kind of based on impedance circle ZnO voltage-dependent ceramic stability evaluation and device.Method includes: at preset temperature and given frequency, the impedance test is carried out to newly-made ZnO voltage-dependent ceramic, determines the first impedance circle of ZnO voltage-dependent ceramic;After a predetermined period of time, the impedance test is carried out to ZnO voltage-dependent ceramic at preset temperature and given frequency, determines the second impedance circle of ZnO voltage-dependent ceramic;According to the first impedance circle and the second impedance circle, determine the impedance change rate of ZnO voltage-dependent ceramic;According to impedance change rate, determine the stability of ZnO voltage-dependent ceramic.Long-term stability of ZnO voltage-dependent ceramic is effectively evaluated.

Description

Technical Field

[0001] The present invention relates to the technical field of ZnO varistor ceramics, and more particularly, to a ZnO varistor ceramic stability evaluation and device based on impedance circle. Background Art

[0002] ZnO varistors in lightning arresters age during operation. This aging process can increase leakage current and residual voltage, which in turn affects the arrester's protective performance and, in severe cases, can endanger the stable operation of the power system. Currently, the long-term stability of ZnO varistors is primarily evaluated using the power consumption change rate, but this method is not effective for evaluating ZnO varistors whose power consumption decreases during operation. Summary of the Invention

[0003] In view of the shortcomings of the existing technology, the present invention provides a ZnO varistor ceramic stability evaluation and device based on impedance circle.

[0004] According to one aspect of the present invention, a method for evaluating the stability of ZnO varistor ceramics based on an impedance circle is provided, comprising:

[0005] Conducting impedance testing on the newly manufactured ZnO varistor ceramic at a preset temperature and a given frequency to determine the first impedance circle of the ZnO varistor ceramic;

[0006] After the ZnO varistor ceramic has been operating for a predetermined period of time, an impedance test is performed on the ZnO varistor ceramic at a preset temperature and a given frequency to determine a second impedance circle of the ZnO varistor ceramic;

[0007] Determining the impedance change rate of the ZnO varistor ceramic according to the first impedance circle and the second impedance circle;

[0008] The stability of ZnO varistor ceramics is determined based on the impedance change rate.

[0009] Optionally, performing an impedance test on a newly manufactured ZnO varistor ceramic at a preset temperature and a given frequency to determine an operation of a first impedance circle of the ZnO varistor ceramic includes:

[0010] Conducting an impedance test on the newly manufactured ZnO varistor ceramic at a preset temperature and a given frequency to determine a first impedance spectrum of the ZnO varistor ceramic;

[0011] The first impedance circle is drawn with the real part of the first impedance spectrum as the abscissa and the imaginary part as the ordinate.

[0012] Optionally, after the ZnO varistor ceramic has been operating for a predetermined period of time, an impedance test is performed on the ZnO varistor ceramic at a preset temperature and a given frequency to determine the operation of the second impedance circle of the ZnO varistor ceramic, including:

[0013] performing an impedance test on the ZnO varistor ceramic after working for a predetermined period of time at a preset temperature and a given frequency to determine a second impedance spectrum of the ZnO varistor ceramic;

[0014] A second impedance circle is drawn with the real part of the second impedance spectrum as the abscissa and the imaginary part as the ordinate.

[0015] Optionally, the operation of determining the impedance change rate of the ZnO varistor ceramic according to the first impedance circle and the second impedance circle includes:

[0016] determining a first grain resistance and a first grain boundary resistance of the ZnO varistor ceramic according to the first impedance circle;

[0017] determining a second grain resistance and a second grain boundary resistance of the ZnO varistor ceramic according to the second impedance circle;

[0018] A first change rate of the ZnO varistor is calculated according to the first grain resistance and the second grain resistance, and a second change rate of the ZnO varistor is calculated according to the first grain boundary resistance and the second grain boundary resistance.

[0019] Optionally, the operation of determining the stability of the ZnO varistor ceramic according to the impedance change rate includes:

[0020] The stability of the ZnO varistor is determined according to the first change rate, the preset first change rate threshold, the second change rate, and the preset second change rate threshold.

[0021] Optionally, the operation of determining the stability of the ZnO varistor ceramic according to the first change rate, a preset first change rate threshold, the second change rate, and a preset second change rate threshold includes:

[0022] When the first change rate exceeds the first change rate threshold or the second change rate exceeds the second change rate threshold, the ZnO varistor is in an unstable state.

[0023] According to another aspect of the present invention, there is provided a ZnO varistor ceramic stability evaluation device based on an impedance circle, comprising:

[0024] A first determination module is used to perform an impedance test on a newly manufactured ZnO varistor ceramic at a preset temperature and a given frequency to determine a first impedance circle of the ZnO varistor ceramic;

[0025] A second determination module is configured to perform an impedance test on the ZnO varistor at a preset temperature and a given frequency after the ZnO varistor has been operating for a predetermined period of time, to determine a second impedance circle of the ZnO varistor;

[0026] a third determining module, configured to determine an impedance change rate of the ZnO varistor ceramic according to the first impedance circle and the second impedance circle;

[0027] The fourth determination module is used to determine the stability of the ZnO varistor ceramic according to the impedance change rate.

[0028] According to another aspect of the present invention, a computer-readable storage medium is provided, wherein the storage medium stores a computer program, and the computer program is used to execute the method according to any one of the above aspects of the present invention.

[0029] According to another aspect of the present invention, an electronic device is provided, comprising: a processor; a memory for storing instructions executable by the processor; and the processor for reading the executable instructions from the memory and executing the instructions to implement the method described in any one of the above aspects of the present invention.

[0030] The present invention conducts an impedance test on a newly manufactured ZnO varistor at a preset temperature and a given frequency to determine the first impedance circle of the ZnO varistor. After the ZnO varistor has operated for a predetermined period of time, the impedance test is conducted on the ZnO varistor at a preset temperature and a given frequency to determine the second impedance circle of the ZnO varistor. Based on the first and second impedance circles, the impedance change rate of the ZnO varistor is determined. Based on the impedance change rate, the stability of the ZnO varistor is determined. This method effectively evaluates the long-term stability of ZnO varistor ceramics and provides a new approach to aging detection of ZnO varistor ceramics. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] A more complete understanding of exemplary embodiments of the present invention may be obtained by referring to the following drawings:

[0032] Figure 1 1 is a flow chart of a method for evaluating the stability of ZnO varistor ceramics based on an impedance circle according to an exemplary embodiment of the present invention;

[0033] Figure 2 1 is a schematic diagram showing changes in power consumption of two different piezoresistive ceramics Z1 and Z2 relative to initial power consumption P0 provided by an exemplary embodiment of the present invention;

[0034] Figure 3 1 is a schematic diagram of impedance circles of two different piezoresistive ceramics Z1 and Z2 provided by an exemplary embodiment of the present invention;

[0035] Figure 4 1 is a schematic structural diagram of a ZnO varistor ceramic stability evaluation device based on an impedance circle provided by an exemplary embodiment of the present invention;

[0036] Figure 5 This is a structure of an electronic device provided by an exemplary embodiment of the present invention. DETAILED DESCRIPTION

[0037] Below, the exemplary embodiments according to the present invention will be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments of the present invention, and it should be understood that the present invention is not limited to the exemplary embodiments described herein.

[0038] It should be noted that the relative arrangement of components and steps, the numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0039] Those skilled in the art will understand that the terms "first" and "second" in the embodiments of the present invention are only used to distinguish different steps, devices or modules, and neither represent any specific technical meaning nor indicate the necessary logical order between them.

[0040] It should also be understood that, in the embodiments of the present invention, “a plurality of” may refer to two or more than two, and “at least one” may refer to one, two or more than two.

[0041] It should also be understood that any component, data or structure mentioned in the embodiments of the present invention can generally be understood as one or more, unless explicitly limited or otherwise indicated in the context.

[0042] In addition, the term "and / or" in this invention merely describes an association relationship between related objects, indicating that three possible relationships exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Furthermore, the character " / " in this invention generally indicates that the related objects are in an "or" relationship.

[0043] It should also be understood that the description of the various embodiments of the present invention focuses on the differences between the various embodiments, and the same or similar aspects thereof can be referenced with each other. For the sake of brevity, they will not be described one by one.

[0044] At the same time, it should be understood that for the convenience of description, the sizes of the various parts shown in the drawings are not drawn according to the actual proportional relationship.

[0045] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.

[0046] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered part of the specification.

[0047] It should be noted that like reference numerals and letters refer to like items in the following figures, and therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0048] Embodiments of the present invention can be applied to electronic devices such as terminal devices, computer systems, and servers, and can operate in conjunction with numerous other general-purpose or specialized computing system environments or configurations. Examples of well-known terminal devices, computing systems, environments, and / or configurations suitable for use with terminal devices, computer systems, servers, and other electronic devices include, but are not limited to, personal computer systems, server computer systems, thin clients, thick clients, handheld or laptop devices, microprocessor-based systems, set-top boxes, programmable consumer electronics, network personal computers, minicomputer systems, mainframe computer systems, and distributed cloud computing technology environments including any of the above.

[0049] Electronic devices such as terminal devices, computer systems, and servers can be described in the general context of computer system-executable instructions (such as program modules) executed by a computer system. Generally, program modules can include routines, programs, object programs, components, logic, data structures, etc., which perform specific tasks or implement specific abstract data types. Computer systems / servers can be implemented in a distributed cloud computing environment, where tasks are performed by remote processing devices linked via a communication network. In a distributed cloud computing environment, program modules can be located on local or remote computing system storage media, including storage devices.

[0050] Exemplary Methods

[0051] Figure 1 FIG. 1 is a flow chart of a ZnO varistor ceramic stability evaluation method based on impedance circle provided by an exemplary embodiment of the present invention. This embodiment can be applied to electronic devices, such as Figure 1 As shown, the ZnO varistor ceramic stability evaluation method 100 based on the impedance circle includes the following steps:

[0052] Step 101: Perform an impedance test on a newly manufactured ZnO varistor ceramic at a preset temperature and a given frequency to determine a first impedance circle of the ZnO varistor ceramic.

[0053] Optionally, performing an impedance test on a newly manufactured ZnO varistor ceramic at a preset temperature and a given frequency to determine an operation of a first impedance circle of the ZnO varistor ceramic includes:

[0054] Conducting an impedance test on the newly manufactured ZnO varistor ceramic at a preset temperature and a given frequency to determine a first impedance spectrum of the ZnO varistor ceramic;

[0055] The first impedance circle is drawn with the real part of the first impedance spectrum as the abscissa and the imaginary part as the ordinate.

[0056] Specifically, the preset temperature can be room temperature or a high temperature of 150-200°C, which is not limited here. The reference range of the given frequency can be 10 -2 ~10 7 Hz. Test the first impedance spectrum of the newly produced ZnO varistor ceramic at a preset temperature and a given frequency. Draw the first impedance circle with the real part of the first impedance spectrum as the abscissa and the imaginary part as the ordinate. If the test temperature is low, it is necessary to extrapolate the test curve so that the impedance circle and the abscissa are comparable to two points.

[0057] Step 102 : After the ZnO varistor ceramic has been operating for a predetermined period of time, an impedance test is performed on the ZnO varistor ceramic at a preset temperature and a given frequency to determine a second impedance circle of the ZnO varistor ceramic.

[0058] Optionally, after the ZnO varistor ceramic has been operating for a predetermined period of time, an impedance test is performed on the ZnO varistor ceramic at a preset temperature and a given frequency to determine the operation of the second impedance circle of the ZnO varistor ceramic, including:

[0059] performing an impedance test on the ZnO varistor ceramic after working for a predetermined period of time at a preset temperature and a given frequency to determine a second impedance spectrum of the ZnO varistor ceramic;

[0060] A second impedance circle is drawn with the real part of the second impedance spectrum as the abscissa and the imaginary part as the ordinate.

[0061] Specifically, the application does not make any specific restrictions on the scheduled working time period, which can be determined by the user, such as one month, two months, six months, one year, etc. The preset temperature can be selected from room temperature or a high temperature of 150-200°C, which is not limited here. The reference range of the given frequency can be 10 -2 ~10 7 Hz. Test the second impedance spectrum of the newly produced ZnO varistor ceramic at a preset temperature and a given frequency, and draw a second impedance circle with the real part of the second impedance spectrum as the horizontal coordinate and the imaginary part as the vertical coordinate. If the test temperature is low, it is necessary to extrapolate the test curve so that the impedance circle and the horizontal coordinate are comparable to two points.

[0062] Step 103, determining the impedance change rate of the ZnO varistor ceramic according to the first impedance circle and the second impedance circle;

[0063] Optionally, the operation of determining the impedance change rate of the ZnO varistor ceramic according to the first impedance circle and the second impedance circle includes:

[0064] determining a first grain resistance and a first grain boundary resistance of the ZnO varistor ceramic according to the first impedance circle;

[0065] determining a second grain resistance and a second grain boundary resistance of the ZnO varistor ceramic according to the second impedance circle;

[0066] A first change rate of the ZnO varistor is calculated according to the first grain resistance and the second grain resistance, and a second change rate of the ZnO varistor is calculated according to the first grain boundary resistance and the second grain boundary resistance.

[0067] Specifically, among the two intersection points of the first impedance circle and the abscissa, the smaller intersection value is the first grain resistance, and the larger intersection value is the first grain boundary resistance. Among the two intersection points of the second impedance circle and the abscissa, the smaller intersection value is the second grain resistance, and the larger intersection value is the second grain boundary resistance. Based on the first grain resistance and the second grain resistance, the first change rate of the ZnO varistor is calculated, and based on the first grain boundary resistance and the second grain boundary resistance, the second change rate of the ZnO varistor is calculated.

[0068] Step 104: Determine the stability of the ZnO varistor ceramic according to the impedance change rate.

[0069] Optionally, the operation of determining the stability of the ZnO varistor ceramic according to the impedance change rate includes:

[0070] The stability of the ZnO varistor is determined according to the first change rate, the preset first change rate threshold, the second change rate, and the preset second change rate threshold.

[0071] GB / T 25083-2010, "Metal Oxide Surge Arresters for ±800kV DC Systems," stipulates that the rate of change of the DC reference voltage and impulse current residual voltage after aging must not exceed 5%. The first and second rate-of-change thresholds in this solution were determined through testing with reference to these requirements.

[0072] Optionally, the operation of determining the stability of the ZnO varistor ceramic according to the first change rate, a preset first change rate threshold, the second change rate, and a preset second change rate threshold includes:

[0073] When the first change rate exceeds the first change rate threshold or the second change rate exceeds the second change rate threshold, the ZnO varistor is in an unstable state.

[0074] Specifically, when the rate of change of any item exceeds a set value, the ZnO varistor needs to be replaced. This invention effectively evaluates the long-term stability of ZnO varistor ceramics, providing a new approach to aging detection of ZnO varistor ceramics. The invention only requires testing the impedance spectrum of the ZnO varistor ceramic, making it simple and easy to operate.

[0075] In addition, the method of the present application can draw an impedance circle for the ZnO varistor ceramic after any working time period, compare it with the first impedance circle drawn for the first time, determine the first change rate and the second change rate, and then perform stability evaluation of the ZnO varistor ceramic in real time.

[0076] In addition, we take polarity reversal DC aging as an example to illustrate how to use impedance circle to judge the long-term stability of ZnO varistor ceramics. During polarity reversal DC aging, the power consumption of two different varistor ceramics Z1 and Z2 changes relative to the initial power consumption P0 as shown in the figure below. Figure 2 0 to 1200 hours is the period before polarity reversal. After 1200 hours, the polarity of the aging voltage reverses, and aging continues until 1400 hours. Before and after polarity reversal, power consumption always decreases first and then stabilizes. Figure 2 It can be seen that the power consumption evaluation can only conclude that the two varistors can pass the aging test, but cannot evaluate their operating status and lifespan.

[0077] Different stages of polarity reversal DC aging, varistor ceramics Z1 and Z2 are tested at 200℃ for 10 -1 ~10 6 The impedance circle measured in the Hz frequency range is as follows Figure 3 As shown, the grain resistance R is extracted from the impedance circle g and grain boundary resistance R gb , and calculate the inverted R g and R gb The rate of change relative to that before aging ((after reversal - before aging) / before aging * 100%) is shown in Table 1. The analysis results show that after aging, the grain resistance increases and the grain boundary resistance decreases, indicating that the performance of the ZnO varistor grain boundaries and grains have changed due to the migration of internal ions and the filling of electrons into empty interface states during the aging process, but this is not reflected when the stability is evaluated by power consumption. In addition, despite the polarity reversal during the aging process, the grain boundary resistance and grain resistance still change monotonically, indicating that the effectiveness of this method does not change with the change of the polarity of the aging voltage. The results of the present invention are helpful to effectively evaluate the long-term stability of ZnO varistor ceramics in engineering applications.

[0078] Table 1

[0079]

[0080] Among them, Figure 3 For illustration purposes only, the user can zoom in or out on the impedance circle curve to read the numerical value.

[0081] Therefore, the present invention realizes the effective evaluation of the long-term stability of ZnO varistor ceramics and provides a new approach for the aging detection of ZnO varistor ceramics. The present invention only needs to test the impedance spectrum of ZnO varistor ceramics, which is simple and easy to operate.

[0082] Exemplary devices

[0083] Figure 4 FIG. 1 is a schematic diagram of a ZnO varistor ceramic stability evaluation device based on an impedance circle provided by an exemplary embodiment of the present invention. Figure 4 As shown, the apparatus 400 includes:

[0084] A first determination module 410 is configured to perform an impedance test on a newly manufactured ZnO varistor ceramic at a preset temperature and a given frequency to determine a first impedance circle of the ZnO varistor ceramic;

[0085] A second determination module 420 is configured to perform an impedance test on the ZnO varistor at a preset temperature and a given frequency after the ZnO varistor has been operating for a predetermined period of time, to determine a second impedance circle of the ZnO varistor;

[0086] A third determining module 430 is configured to determine an impedance change rate of the ZnO varistor ceramic according to the first impedance circle and the second impedance circle;

[0087] The fourth determination module 440 is configured to determine the stability of the ZnO varistor ceramic according to the impedance change rate.

[0088] Optionally, the first determining module 410 includes:

[0089] A first determination submodule is used to perform an impedance test on the newly manufactured ZnO varistor ceramic at a preset temperature and a given frequency to determine a first impedance spectrum of the ZnO varistor ceramic;

[0090] The first drawing submodule is configured to draw a first impedance circle using the real part of the first impedance spectrum as the abscissa and the imaginary part as the ordinate.

[0091] Optionally, the second determining module 420 includes:

[0092] A second determination submodule is configured to perform an impedance test on the ZnO varistor ceramic after working for a predetermined period of time at a preset temperature and a given frequency to determine a second impedance spectrum of the ZnO varistor ceramic;

[0093] The second drawing submodule is used to draw a second impedance circle using the real part of the second impedance spectrum as the abscissa and the imaginary part as the ordinate.

[0094] Optionally, the third determining module 430 includes:

[0095] A third determination submodule is configured to determine a first grain resistance and a first grain boundary resistance of the ZnO varistor ceramic according to the first impedance circle;

[0096] a fourth determination submodule, configured to determine a second grain resistance and a second grain boundary resistance of the ZnO varistor ceramic according to the second impedance circle;

[0097] The calculation submodule is used to calculate a first change rate of the ZnO varistor ceramic according to the first grain resistance and the second grain resistance, and to calculate a second change rate of the ZnO varistor ceramic according to the first grain boundary resistance and the second grain boundary resistance.

[0098] Optionally, the fourth determining module 440 includes:

[0099] The fifth determination submodule is used to determine the stability of the ZnO varistor ceramic according to the first change rate, the preset first change rate threshold, the second change rate and the preset second change rate threshold.

[0100] Optionally, the fifth determining submodule includes:

[0101] The judgment unit is used to determine that the ZnO varistor is in an unstable state when the first change rate exceeds a first change rate threshold or the second change rate exceeds a second change rate threshold.

[0102] Exemplary electronic devices

[0103] Figure 5 This is the structure of an electronic device provided by an exemplary embodiment of the present invention. Figure 5 As shown, the electronic device 50 includes one or more processors 51 and a memory 52 .

[0104] The processor 51 may be a central processing unit (CPU) or other forms of processing units having data processing capabilities and / or instruction execution capabilities, and may control other components in the electronic device to perform desired functions.

[0105] The memory 52 may include one or more computer program products, which may include various forms of computer-readable storage media, such as volatile memory and / or non-volatile memory. The volatile memory may, for example, include random access memory (RAM) and / or cache memory (cache), etc. The non-volatile memory may, for example, include read-only memory (ROM), a hard disk, a flash memory, etc. One or more computer program instructions may be stored on the computer-readable storage medium, and the processor 51 may execute the program instructions to implement the implementation methods of the software programs of the various embodiments of the present invention described above and / or other desired functions. In one example, the electronic device may further include: an input device 53 and an output device 54, which are interconnected via a bus system and / or other forms of connection mechanisms (not shown).

[0106] In addition, the input device 53 may also include, for example, a keyboard, a mouse, and the like.

[0107] The output device 54 can output various information to the outside. The output device 54 can include, for example, a display, a speaker, a printer, a communication network and a remote output device connected thereto.

[0108] Of course, to simplify, Figure 5 Only some of the components related to the present invention in the electronic device are shown, and components such as a bus, an input / output interface, etc. are omitted. In addition, the electronic device may further include any other appropriate components according to specific application scenarios.

[0109] Exemplary computer program products and computer-readable storage media

[0110] In addition to the above-mentioned methods and devices, an embodiment of the present invention may also be a computer program product, which includes computer program instructions, which, when executed by a processor, enable the processor to execute the steps of the implementation method according to the present invention described in the above-mentioned "Exemplary Method" section of this specification.

[0111] The computer program product may be written in any combination of one or more programming languages ​​to implement the operations of embodiments of the present invention, including object-oriented programming languages ​​such as Java, C++, and conventional procedural programming languages ​​such as C or similar programming languages. The program code may be executed entirely on the user's computing device, partially on the user's computing device, as a stand-alone software package, partially on the user's computing device and partially on a remote computing device, or entirely on a remote computing device or server.

[0112] In addition, an embodiment of the present invention may also be a computer-readable storage medium having computer program instructions stored thereon, which, when executed by a processor, causes the processor to execute the steps of the method for information mining of historical change records according to various embodiments of the present invention described in the above "Exemplary Method" section of this specification.

[0113] The computer-readable storage medium can adopt any combination of one or more readable media. The readable medium can be a readable signal medium or a readable storage medium. The readable storage medium can, for example, include but is not limited to a system, system or device of electricity, magnetism, light, electromagnetic, infrared, or semiconductor, or any combination thereof. More specific examples (non-exhaustive list) of readable storage media include: an electrical connection with one or more wires, a portable disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination thereof.

[0114] The basic principles of the present invention have been described above in conjunction with specific embodiments. However, it should be noted that the advantages, strengths, and effects mentioned in the present invention are merely illustrative and non-limiting, and should not be construed as necessarily possessed by each embodiment of the present invention. Furthermore, the specific details disclosed above are provided for illustrative purposes and to facilitate understanding, and are not intended to be limiting. These details do not necessarily limit the present invention to being implemented using these specific details.

[0115] Each embodiment in this specification is described in a progressive manner, with each embodiment focusing on its differences from the other embodiments. References to the same or similar parts between the various embodiments are sufficient. For system embodiments, since they are generally similar to the method embodiments, their description is relatively simple. For relevant parts, references to the description of the method embodiments are sufficient.

[0116] The block diagrams of the devices, systems, equipment, and systems involved in the present invention are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As will be appreciated by those skilled in the art, these devices, systems, equipment, and systems can be connected, arranged, or configured in any manner. Words such as "including," "comprising," "having," and the like are open-ended words, meaning "including but not limited to," and can be used interchangeably therewith. The words "or" and "and" used herein refer to the words "and / or" and can be used interchangeably therewith, unless the context clearly indicates otherwise. The word "such as" used herein refers to the phrase "such as but not limited to," and can be used interchangeably therewith.

[0117] The method and system of the present invention may be implemented in many ways. For example, the method and system of the present invention may be implemented by software, hardware, firmware, or any combination of software, hardware, and firmware. The above sequence of steps for the method is for illustration only, and the steps of the method of the present invention are not limited to the sequence specifically described above, unless otherwise specified. In addition, in some embodiments, the present invention may also be implemented as a program recorded in a recording medium, which includes machine-readable instructions for implementing the method according to the present invention. Thus, the present invention also covers recording media that store programs for executing the method according to the present invention.

[0118] It should also be noted that, in the system, device and method of the present invention, each component or each step can be decomposed and / or recombined. These decompositions and / or recombinations should be regarded as equivalent schemes of the present invention. The above description of the disclosed aspects is provided to enable any technician in this field to make or use the present invention. Various modifications to these aspects will be very obvious to those skilled in the art, and the general principles defined here can be applied to other aspects without departing from the scope of the present invention. Therefore, the present invention is not intended to be limited to the aspects shown here, but according to the widest scope consistent with the principles disclosed here and novel features.

[0119] The above description has been provided for the purpose of illustration and description. Furthermore, this description is not intended to limit the embodiments of the present invention to the forms disclosed herein. Although a number of example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A ZnO varistor ceramic stability evaluation method based on impedance circle, characterized in that: include: Performing an impedance test on the newly manufactured ZnO varistor ceramic at a preset temperature and a given frequency to determine a first impedance circle of the ZnO varistor ceramic; After the ZnO varistor has been operating for a predetermined period of time, performing an impedance test on the ZnO varistor at the preset temperature and the given frequency to determine a second impedance circle of the ZnO varistor; determining an impedance change rate of the ZnO varistor ceramic according to the first impedance circle and the second impedance circle; Determining the stability of the ZnO varistor ceramic according to the impedance change rate; The operation of determining the impedance change rate of the ZnO varistor ceramic according to the first impedance circle and the second impedance circle includes: determining a first grain resistance and a first grain boundary resistance of the ZnO varistor ceramic according to the first impedance circle; determining a second grain resistance and a second grain boundary resistance of the ZnO varistor ceramic according to the second impedance circle; Calculating a first change rate of the ZnO varistor ceramic according to the first grain resistance and the second grain resistance, and calculating a second change rate of the ZnO varistor ceramic according to the first grain boundary resistance and the second grain boundary resistance; The operation of determining the stability of the ZnO varistor ceramic according to the impedance change rate includes: determining the stability of the ZnO varistor ceramic according to the first change rate, a preset first change rate threshold, the second change rate, and a preset second change rate threshold; The operation of determining the stability of the ZnO varistor ceramic according to the first change rate, a preset first change rate threshold, the second change rate, and a preset second change rate threshold includes: When the first change rate exceeds the first change rate threshold or the second change rate exceeds the second change rate threshold, it is determined that the ZnO varistor is in an unstable state.

2. The method according to claim 1, characterized in that An operation of performing an impedance test on a newly manufactured ZnO varistor ceramic at a preset temperature and a given frequency to determine a first impedance circle of the ZnO varistor ceramic comprises: performing an impedance test on the newly manufactured ZnO varistor ceramic at the preset temperature and the given frequency to determine a first impedance spectrum of the ZnO varistor ceramic; The first impedance circle is drawn with the real part of the first impedance spectrum as the abscissa and the imaginary part as the ordinate.

3. The method according to claim 1, characterized in that After the ZnO varistor has been operating for a predetermined period of time, an impedance test is performed on the ZnO varistor at the preset temperature and the given frequency to determine a second impedance circle of the ZnO varistor, comprising: performing an impedance test on the ZnO varistor ceramic after operating for a predetermined period of time at the preset temperature and the given frequency to determine a second impedance spectrum of the ZnO varistor ceramic; The second impedance circle is drawn with the real part of the second impedance spectrum as the abscissa and the imaginary part as the ordinate.

4. A ZnO varistor ceramic stability evaluation device based on impedance circle, characterized in that: include: A first determination module is configured to perform an impedance test on a newly manufactured ZnO varistor ceramic at a preset temperature and a given frequency to determine a first impedance circle of the ZnO varistor ceramic; a second determining module, configured to perform an impedance test on the ZnO varistor at the preset temperature and the given frequency after the ZnO varistor has been operating for a predetermined period of time, to determine a second impedance circle of the ZnO varistor; a third determining module, configured to determine an impedance change rate of the ZnO varistor ceramic according to the first impedance circle and the second impedance circle; a fourth determining module, configured to determine the stability of the ZnO varistor ceramic according to the impedance change rate; The third determination module includes: a third determining submodule, configured to determine a first grain resistance and a first grain boundary resistance of the ZnO varistor ceramic according to the first impedance circle; a fourth determining submodule, configured to determine a second grain resistance and a second grain boundary resistance of the ZnO varistor ceramic according to the second impedance circle; a calculation submodule, configured to calculate a first change rate of the ZnO varistor ceramic according to the first grain resistance and the second grain resistance, and to calculate a second change rate of the ZnO varistor ceramic according to the first grain boundary resistance and the second grain boundary resistance; The fourth determination module includes: a fifth determining submodule, configured to determine the stability of the ZnO varistor ceramic according to the first change rate, a preset first change rate threshold, the second change rate, and a preset second change rate threshold; The fifth determination submodule includes: A judgment unit is used to determine that the ZnO varistor is in an unstable state when the first change rate exceeds the first change rate threshold or the second change rate exceeds the second change rate threshold.

5. The device according to claim 4, characterized in that The first determination module includes: a first determining submodule, configured to perform an impedance test on the newly manufactured ZnO varistor at the preset temperature and the given frequency to determine a first impedance spectrum of the ZnO varistor; The first drawing submodule is configured to draw the first impedance circle using the real part of the first impedance spectrum as the abscissa and the imaginary part as the ordinate.

6. The device according to claim 4, characterized in that The second determination module includes: a second determination submodule, configured to perform an impedance test on the ZnO varistor ceramic after working for a predetermined period of time at the preset temperature and the given frequency, to determine a second impedance spectrum of the ZnO varistor ceramic; The second drawing submodule is configured to draw the second impedance circle using the real part of the second impedance spectrum as the abscissa and the imaginary part as the ordinate.

7. A computer-readable storage medium, characterized in that The storage medium stores a computer program, and the computer program is used to execute the method according to any one of claims 1 to 3.

8. An electronic device, characterized in that: The electronic device comprises: processor; a memory for storing instructions executable by the processor; The processor is configured to read the executable instructions from the memory and execute the instructions to implement the method according to any one of claims 1 to 3.

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