Low-voltage gradient zinc oxide varistor ceramic, preparation method and application thereof

By introducing ultrahard nano-second phase particles into the zinc oxide matrix and utilizing stress-induced piezoelectric polarization to regulate the grain boundary barrier, the problems of microstructure sensitivity and mechanical failure risk in the design of thin-layer zinc oxide ceramics were solved, and significant nonlinear current-voltage response and stability under low voltage were achieved.

CN119528563BActive Publication Date: 2026-04-10DONGHUA UNIV
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Patent Information

Application Number
CN202411541992.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-10-31
Publication Date
2026-04-10
Estimated Expiration
2044-10-31

AI Technical Summary

Technical Problem

Existing zinc oxide ceramic thin-layer designs lead to increased microstructure sensitivity and mechanical failure risk, making it difficult to achieve significant nonlinear current-voltage response at low voltages.

Method used

By introducing ultrahard nano-second phase particles into a zinc oxide matrix, adjusting the grain boundary barrier using internal stress-induced piezoelectric polarization, and controlling the varistor voltage using a cold sintering process, a low voltage gradient zinc oxide varistor ceramic was prepared.

Benefits of technology

Significant nonlinear current-voltage response is achieved at low voltages, reducing the varistor voltage gradient and improving the stability and mechanical strength of the varistor ceramic.

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Abstract

The application relates to low-voltage gradient zinc oxide pressure-sensitive ceramic and a preparation method and application thereof. By adjusting sintering pressure and content of a second phase, the pressure-sensitive voltage of undoped and doped pressure-sensitive ceramic can be effectively controlled, low-voltage gradient ZnO pressure-sensitive ceramic is obtained, and the problem that the existing zinc oxide pressure-sensitive ceramic cannot realize the low-voltage gradient characteristic is solved.
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