Method for manufacturing LED chip, LED chip, method for manufacturing device, and device

Abstract

The application provides a manufacturing method of an LED chip, comprising the following steps: forming a plurality of LED chip module structures bonded with temporary transfer substrates; the LED chip module structure comprises an N-type epitaxial layer, a light-emitting layer and a P-type epitaxial layer which are stacked in sequence; the temporary transfer substrate is bonded on the P-type epitaxial layer; providing a first substrate; the first substrate comprises a plurality of first substrate units; the first substrate unit comprises an N electrode and a P electrode; bonding the N-type epitaxial layer in the LED chip module structure with the corresponding first substrate unit, and simultaneously removing the temporary transfer substrate, so as to transfer the plurality of LED chip module structures to the first substrate as a whole; electrically connecting the P-type epitaxial layer in each LED chip module structure with the corresponding P electrode, and electrically connecting the N-type epitaxial layer with the corresponding N electrode; and integrally packaging the plurality of LED chip module structures.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of LED chip, in particular to a manufacturing method of LED chip, LED chip, manufacturing method of equipment and equipment. BACKGROUND

[0002] At present, the production process steps of the backlight LED light bar on the market are complicated, rely on multiple production lines for processing and combination production (chip soldering line, chip packaging, PCB soldering, etc.), such a production line generally requires 14 to 17 people, and needs multiple workers to transport and transfer. Therefore, there are the following disadvantages: complex process flow, more people, higher labor cost; multiple production lines transfer semi-finished products, need multiple workers to transport and transfer, due to human factors, it is easy to cause mixing or product damage, causing serious loss to the factory; the factory transfer process needs to consume time, the production efficiency is low; the product is packaged externally and soldered to make the size of the LED chip increase, which is not conducive to miniaturization.

[0003] Therefore, it is urgent for the technical personnel in the field to develop a process that simplifies the production process flow, reduces labor cost, improves production efficiency and product yield, and realizes product miniaturization. SUMMARY

[0004] The present application provides a manufacturing method of LED chip, LED chip, manufacturing method of equipment and equipment, to solve the problems of product damage and low efficiency caused by multiple process production lines, and the problem of LED chip size increase caused by sub-packaging and wire bonding, which is not conducive to miniaturization.

[0005] According to a first aspect of the present application, a manufacturing method of LED chip is provided, comprising:

[0006] forming a plurality of LED chip module structures bonded with a temporary transfer substrate; the LED chip module structure comprises: an N-type epitaxial layer, a light-emitting layer and a P-type epitaxial layer stacked in sequence; wherein the P-type epitaxial layer and the light-emitting layer are formed on part of the N-type epitaxial layer to expose part of the N-type epitaxial layer; the temporary transfer substrate is bonded on the P-type epitaxial layer;

[0007] providing a first substrate; the first substrate comprises a plurality of first substrate units; the first substrate unit comprises an N electrode and a P electrode; wherein the positions of the N electrode and the P electrode on the first substrate are adapted to the positions of the corresponding N-type epitaxial layer and P-type epitaxial layer in the LED chip module structure, respectively;

[0008] bonding the N-type epitaxial layer in the LED chip module structure with the corresponding first substrate unit, while removing the temporary transfer substrate, to transfer the whole LED chip module structure to the first substrate;

[0009] bonding the P-type epitaxial layer in each of the LED chip module structure with the corresponding P electrode, and bonding the N-type epitaxial layer with the corresponding N electrode;

[0010] integrally packaging the LED chip module structure.

[0011] Optionally, the size of the first substrate unit is adapted to the size of the LED chip module structure.

[0012] Optionally, forming the LED chip module structure bonded with the temporary transfer substrate, specifically comprising:

[0013] forming the LED chip module structure on the substrate;

[0014] providing the temporary transfer substrate with a bonding layer;

[0015] bonding the temporary transfer substrate to the first surface of the substrate through the bonding layer; the first surface of the substrate represents a surface on which the LED chip module structure is formed;

[0016] stripping the substrate to form the LED chip module structure bonded with the temporary transfer substrate.

[0017] Optionally, forming the LED chip module structure on the substrate, specifically comprising:

[0018] providing the substrate;

[0019] forming the N-type epitaxial layer, the light-emitting layer and the P-type epitaxial layer on the substrate in sequence;

[0020] etching the N-type epitaxial layer, the light-emitting layer and the P-type epitaxial layer to expose part of the substrate and part of the N-type epitaxial layer around the substrate, so that the P-type epitaxial layer and the light-emitting layer are formed on part of the N-type epitaxial layer, to form the LED chip module structure on the substrate.

[0021] Optionally, the substrate is a composite patterned sapphire substrate; the composite patterned sapphire substrate comprises a sapphire substrate and a patterned structure layer formed on the sapphire substrate; wherein the LED chip module structure is formed on the patterned structure layer.

[0022] Optionally, after the substrate is peeled off to form the plurality of LED chip module structures bonded with the temporary transfer substrate, the method further comprises:

[0023] The patterned structure layer is removed to form the plurality of LED chip module structures bonded with the temporary transfer substrate.

[0024] Optionally, the P-type epitaxial layer in each of the LED chip module structures is electrically connected with the corresponding P electrode, and the N-type epitaxial layer is electrically connected with the corresponding N electrode, specifically comprising:

[0025] The N-type epitaxial layer is connected with the corresponding N electrode through a metal trace, so that the N-type epitaxial layer is electrically connected with the N electrode.

[0026] The P-type electrode is connected with the corresponding P electrode through the metal trace, so that the N-type epitaxial layer is electrically connected with the N electrode.

[0027] Optionally, the plurality of LED chip modules are integrally encapsulated, specifically comprising:

[0028] A packaging cover plate is provided;

[0029] The packaging cover plate is bonded on the first substrate to form the encapsulated LED chip, so as to integrally encapsulate the plurality of LED chip modules.

[0030] According to a second aspect of the present application, an LED chip is provided, which is manufactured by the manufacturing method of the LED chip according to any one of the first aspect of the present application, comprising:

[0031] A first substrate; the first substrate comprises a plurality of first substrate units; each first substrate unit comprises an N electrode and a P electrode;

[0032] A plurality of LED chip module structures; each LED chip module structure comprises: an N-type epitaxial layer, a light-emitting layer and a P-type epitaxial layer stacked in sequence; wherein the P-type epitaxial layer and the light-emitting layer are formed on part of the N-type epitaxial layer to expose part of the N-type epitaxial layer; the P-type epitaxial layer in each of the LED chip module structures is electrically connected with the corresponding P electrode, and the N-type epitaxial layer is electrically connected with the corresponding N electrode; wherein the N-type epitaxial layer in each of the LED chip module structures is bonded with the corresponding first substrate unit, so that the plurality of LED chip module structures are formed on the plurality of first substrate units;

[0033] A packaging cover plate; the packaging cover plate is bonded on the first substrate, so that the LED chip is integrally encapsulated on the packaging cover plate.

[0034] Optionally, the LED chip further comprises:

[0035] a plurality of metal wires; the N-type epitaxial light-emitting layer is connected to the N electrode through the metal wires, so that the N-type epitaxial layer is electrically connected to the N electrode; the P-type epitaxial layer is connected to the P electrode through the metal wires, so that the P-type epitaxial layer is electrically connected to the P electrode.

[0036] Optionally, the first substrate is a COMS substrate.

[0037] Optionally, the packaging cover plate is bonded to the first substrate through an adhesive layer.

[0038] According to a third aspect of the present application, a manufacturing method of an electronic device is provided, comprising the manufacturing method of the LED of any one of the first aspect of the present application.

[0039] According to a fourth aspect of the present application, an electronic device is provided, comprising the LED chip of any one of the second aspect of the present application.

[0040] The manufacturing method of the LED chip provided by the present application saves the manufacturing process and ensures the product yield by transferring the plurality of LED chip modules on the temporary transfer substrate to the corresponding first substrate units in the first substrate. The miniaturization of the final product of the LED chip is realized by the overall packaging of the plurality of LED chip modules on the first substrate, compared with the packaging of a single chip module in the prior art. Thus, the technical solution provided by the present application can solve the problems of product damage and low efficiency caused by the multiple process production lines in the prior art, and the problem of the increase of the size of the LED chip caused by the sub-packaging and wire bonding, which is not conducive to miniaturization. The technical effects of simplifying the production process flow, reducing labor costs, improving production efficiency and product yield, and realizing the miniaturization of the product are achieved. Further, due to the miniaturization of the product, the number of chip modules per unit area increases, and the effective light-emitting area becomes larger, which can achieve better product performance. BRIEF DESCRIPTION OF DRAWINGS

[0041] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed in the embodiments or the prior art description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0042] Figure 1 is a flowchart of a manufacturing method of an LED provided by an embodiment of the present application;

[0043] Figure 2 、 5 , 7, 12 and 13 are top views of device structures at different process stages according to the manufacturing method of the LED chip provided by an embodiment of the present application;

[0044] Figure 3 、 6 , 8, 9, 10, 11, 14, 15 are sectional views of device structures along the dotted line ① at different process stages according to the manufacturing method of the LED chip provided by an embodiment of the present application;

[0045] Figure 4 、 16 are sectional views of device structures along the dotted line ② at different process stages according to the manufacturing method of the LED chip provided by an embodiment of the present application;

[0046] Legend of reference signs:

[0047] 101 - first substrate unit;

[0048] 102 - N-type epitaxial layer;

[0049] 103 - light-emitting layer;

[0050] 104 - P-type epitaxial layer;

[0051] 105 - P electrode;

[0052] 106 - N electrode;

[0053] 107 - metal trace;

[0054] 108 - substrate;

[0055] 109 - patterned structure layer;

[0056] 110 - temporary transfer substrate;

[0057] 111 - bonding layer;

[0058] 112 - adhesive layer;

[0059] 114 - encapsulation cover plate. DETAILED DESCRIPTION

[0060] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0061] The terms "first", "second", "third", "fourth" and the like in the description and in the claims of the present application, if any, are used for distinguishing between similar objects talking about the exemplary embodiments of the application and do not necessarily have to appear in the conjunctive form, for example, "first", "second", "third", "fourth", and the like, unless otherwise stated, are used to distinguish between objects talking about the exemplary embodiments of the application. It is to be understood that the use of the terms "first", "second", "third", "fourth", and the like, if any, are to be interpreted to be interchangeable when appropriate, such that the exemplary embodiments of the present application described herein are capable of embodiment in any order. Furthermore, the terms "comprising", "having", "including", and the like, if any, are to be interpreted as referring to the inclusions of one or more steps of a process, methods, systems, products or apparatus, and are not to be interpreted as referring to the inclusions of all of the steps of the process, methods, systems, products or apparatus, unless otherwise stated.

[0062] At present, the production process of the backlight LED light bar on the market is complicated, which needs to rely on multiple production lines for processing and combination production (chip soldering line, chip packaging, PCB welding, etc.). Such production line generally needs 14 to 17 people, and needs multiple workers to transport and turnover. Therefore, there are the following disadvantages: first, the process flow is complex, the number of people is large, and the labor cost is high; multiple production lines transport semi-finished products, which need multiple workers to transport and turnover, and due to human factors, it is easy to cause mixing or product damage, causing serious loss to the factory; the factory transportation process needs to consume time, and the production efficiency is low; second, the product is packaged and wire-bonded externally, which increases the size of the LED chip, which is not conducive to miniaturization.

[0063] Therefore, the problems existing in the production of the backlight LED light bar by the existing technical means are: the problems of product damage and low efficiency caused by multiple process production lines, and the problem of increasing the size of the LED chip caused by sub-packaging and wire-bonding, which is not conducive to miniaturization.

[0064] However, with the continuous improvement of the design structure and bonding yield of LED chips in the industry, the process of packaging the single chip in sequence in the existing technical means can be changed, the manufacturing process of the LED light (or LED display) can be simplified, the cost can be saved, and the miniaturization of the LED product is beneficial.

[0065] Therefore, the inventors of the present application design the LED chip as a common normal structure, based on a higher bonding yield, after patterning the N&P epitaxial layer, the whole structure of the N&P epitaxial layer after patterning is massively transferred, and after connecting the electrodes of the N&P layer, the whole chip is packaged; compared with the prior art, the traditional LED production process is cancelled, such as frequent replacement of production lines, off-site packaging and PCB board pressure welding process, the production process is simplified, the labor cost is reduced, the production efficiency and product yield are improved, and the product is completed in the chip process stage. Since the chip is made by whole packaging, compared with the single packaging of the prior art several times, the LED product can be further miniaturized.

[0066] Therefore, the technical solution provided in the present application can solve the problems of product damage and low efficiency caused by multiple process production lines in the prior art, and the problem of increasing the size of the LED chip caused by sub-packaging and wire bonding, which is not conducive to miniaturization. The production process can be simplified, the labor cost can be reduced, the production efficiency and product yield can be improved, and the product can be miniaturized, so that the number of chips per unit area is large, the effective light emitting area is large, and better product performance is achieved.

[0067] The technical solutions of the present application will be described in detail below with specific examples. The following specific examples can be combined with each other, and the same or similar concepts or processes may not be described in detail in some examples.

[0068] Please refer to Figures 1-16 , wherein Figure 1 is a flowchart of a method for manufacturing an LED chip, Figure 3 , 6 , 8, 9, 10, 11, 14, and 15 are cross-sectional views of the structure at different process stages in the manufacturing process of the LED chip along the dotted line ①. Figure 4 and Figure 16 are cross-sectional views of the structure at different process stages in the manufacturing process of the LED chip along the dotted line ②. Figure 2 , 5 , 7, 12, and 13 are top views of the device structure at different process stages in the manufacturing process of the LED chip; specifically:

[0069] According to an embodiment of the present application, a method for manufacturing an LED chip is provided, comprising:

[0070] S11: Forming a plurality of LED chip module structures bonded with temporary transfer substrates 110; the LED chip module structure includes: an N-type epitaxial layer 102, a light-emitting layer 103, and a P-type epitaxial layer 104 stacked sequentially; wherein, the P-type epitaxial layer 104 and the light-emitting layer 103 are formed on a portion of the substrate. The The N-type epitaxial layer 102 is partially exposed; the temporary transfer substrate 110 is bonded to the P-type epitaxial layer 104. A cross-sectional view of the LED chip module structure is shown below. Figure 11 As shown;

[0071] S12: A first substrate is provided; the first substrate includes a plurality of first substrate units 101; each first substrate unit 101 includes an N-electrode 106 and a P-electrode 105; wherein the positions of the N-electrode 106 and the P-electrode 105 on the first substrate are respectively adapted to the positions of the corresponding N-type epitaxial layer 102 and the P-type epitaxial layer 104 in the LED chip module structure, and a top view of the structure of the first substrate unit 101 is shown below. Figure 12 As shown;

[0072] S13: Bond the N-type epitaxial layer 102 in the LED chip module structure to the corresponding first substrate unit 101, and simultaneously remove the temporary transfer substrate 110 to transfer the entire plurality of LED chip module structures onto the first substrate; the top view after bonding is shown below. Figure 13 As shown, the cross-sectional view is as follows Figure 14 As shown;

[0073] S14: Electrically connect the P-type epitaxial layer 104 in each LED chip module structure to the corresponding P electrode 105, and electrically connect the N-type epitaxial layer 102 to the corresponding N electrode 106; for example Figure 2 , Figure 15 and Figure 16 As shown; where, Figure 2 This is a top view of the LED chip module structure after electrical connections. Figure 15 This is a cross-sectional view along the dashed line ① after the LED chip module structure is electrically connected. Figure 16 This is a cross-sectional view along dashed line ② after the LED chip module structure is electrically connected;

[0074] S15: Perform overall packaging of the aforementioned LED chip modules; such as... Figure 3 or Figure 4 As shown; where, Figure 3 This is a cross-sectional view along the dashed line ① after the LED chip module structure is packaged. Figure 4 This is a cross-sectional view along dashed line ② after the LED chip module structure is packaged.

[0075] The application provides a manufacturing method of an LED chip, and manufacturing a first substrate comprising a plurality of first substrate units 101; wherein each first substrate unit 101 is adapted to an LED chip module; firstly, a plurality of LED chip modules formed on a temporary transfer substrate 110 are integrally transferred to the first substrate, so that each LED chip module is transferred to a corresponding first substrate unit 101; secondly, the P-type epitaxial layer 104 in each LED chip module structure is electrically connected with the corresponding P electrode 105, and the N-type epitaxial layer 102 is electrically connected with the corresponding N electrode 106; finally, the plurality of LED chip modules are integrally and one-time packaged, and finally the LED chip is obtained.

[0076] It can be seen that the technical scheme provided by the application saves the manufacturing process and guarantees the product yield by integrally transferring the plurality of LED chip modules on the temporary transfer substrate 110 to the corresponding first substrate units 101 in the first substrate; and compared with the prior art of packaging a single chip module, the integral packaging of the plurality of LED chip modules on the first substrate realizes the miniaturization of the final product of the LED chip.

[0077] Therefore, the technical scheme provided by the application can solve the problems of product damage and low efficiency caused by the process production line in the prior art, and the problem of the increase of the size of the LED chip caused by the sub-packaging and wire bonding, which is not conducive to miniaturization; the technical effects of simplifying the production process, reducing the labor cost, improving the production efficiency and the product yield, and realizing the miniaturization of the product can be achieved; further, since the product is miniaturized, the number of chip modules per unit area is increased, and the effective light emitting area is greatly increased, so that better product performance can be achieved.

[0078] In an embodiment, the size of the first substrate unit 101 is adapted to the size of the LED chip module structure.

[0079] In an embodiment, step S11 of forming a plurality of LED chip module structures bonded with the temporary transfer substrate 110 specifically comprises S111-S114:

[0080] S111: forming the plurality of LED chip module structures on the substrate 108; as shown in Figure 7 and Figure 8 wherein, Figure 7 is a top view of the device;

[0081] In an embodiment, step S111 of forming a plurality of LED chip module structures on the substrate 108 specifically comprises S1111-S1113:

[0082] S1111: providing the substrate 108;

[0083] S1112: sequentially forming the N-type epitaxial layer 102, the light-emitting layer 103 and the P-type epitaxial layer 104 on the substrate 108; the device formed after this step is shown in FIGS. 1 and 2, wherein, Figure 5 and Figure 6 FIG. 1 is a top view of the device; Figure 5

[0084] S1113: etching the N-type epitaxial layer 102, the light-emitting layer 103 and the P-type epitaxial layer 104 to expose part of the substrate 108 and part of the N-type epitaxial layer 102 around the substrate 108, so that the P-type epitaxial layer 104 and the light-emitting layer 103 are formed on part of the N-type epitaxial layer 102, to form the plurality of LED chip module structures on the substrate 108, as shown in FIGS. 1 and 2. Figure 7 and Figure 8

[0085] S112: providing the temporary transfer substrate 110 with a bonding layer 111;

[0086] S113: bonding the temporary transfer substrate 110 to the first surface of the substrate 108 through the bonding layer 111; the first surface of the substrate 108 represents the surface of the substrate 108 on which the plurality of LED chip module structures are formed;

[0087] S114: peeling off the substrate 108 to form the plurality of LED chip module structures bonded with the temporary transfer substrate 110, as shown in FIGS. 1 and 2. Figure 9 and Figure 10

[0088] In order to improve the growth quality of the epitaxial layer on the substrate 108, in an embodiment, the substrate 108 is a composite patterned sapphire substrate; the composite patterned sapphire substrate includes a sapphire substrate and a patterned structure layer 109 formed on the sapphire substrate; wherein the plurality of LED chip module structures are formed on the patterned structure layer 109, as shown in FIG. 3. Figure 6

[0089] In an embodiment, after step S114, peeling off the substrate 108 to form the plurality of LED chip module structures bonded with the temporary transfer substrate 110, the method further includes:

[0090] S115: removing the patterned structure layer 109 to form the plurality of LED chip module structures bonded with the temporary transfer substrate 110, as shown in FIG. 3. Figure 11

[0091] ​​​​​In one embodiment, the step S14 of electrically connecting the P-type epitaxial layer 104 in each LED chip module structure to the corresponding P electrode 105 and electrically connecting the N-type epitaxial layer 102 to the corresponding N electrode 106 specifically includes:

[0092] S141: connecting the N-type epitaxial layer 102 to the corresponding N electrode 106 through a metal trace 107, so that the N-type epitaxial layer 102 is electrically connected to the N electrode 106;

[0093] S142: connecting the P-type electrode to the corresponding P electrode 105 through the metal trace 107, so that the N-type epitaxial layer 102 is electrically connected to the N electrode 106.

[0094] In one embodiment, the step S15 of integrally packaging the plurality of LED chip modules specifically includes:

[0095] S151: providing a packaging cover plate 114;

[0096] S152: bonding the packaging cover plate 114 to the first substrate to form packaged LED chips, so as to integrally package the plurality of LED chip modules.

[0097] Secondly, according to one embodiment of the present application, an LED chip is also provided, which is manufactured by using the manufacturing method of the LED chip according to any one of the aforementioned embodiments of the present application, and includes:

[0098] a first substrate; the first substrate includes a plurality of first substrate units 101; each first substrate unit 101 includes an N electrode 106 and a P electrode 105;

[0099] a plurality of LED chip module structures; each LED chip module structure includes: an N-type epitaxial layer 102, a light-emitting layer 103, and a P-type epitaxial layer 104 stacked in sequence; wherein the P-type epitaxial layer 104 and the light-emitting layer 103 are formed on part of the N-type epitaxial layer 102 to expose part of the N-type epitaxial layer 102; the P-type epitaxial layer 104 in each LED chip module structure is electrically connected to the corresponding P electrode 105, and the N-type epitaxial layer 102 is electrically connected to the corresponding N electrode 106; wherein the N-type epitaxial layer 102 in each LED chip module structure is bonded to the corresponding first substrate unit 101, so that the plurality of LED chip module structures are formed on the plurality of first substrate units 101;

[0100] a packaging cover plate 114; the packaging cover plate 114 is bonded to the first substrate, so that the LED chip is integrally packaged on the packaging cover plate 114.

[0101] The technical solution provided by the present application only has one whole packaging cover plate 114, compared with the prior art, and the miniaturization of the LED chip final product is realized.

[0102] In one embodiment, the LED chip further comprises:

[0103] a plurality of metal wires 107; the N-type epitaxial light-emitting layer 103 is connected to the N electrode 106 through the metal wires 107, so that the N-type epitaxial layer 102 is electrically connected to the N electrode 106; and the P-type epitaxial layer 104 is connected to the P electrode 105 through the metal wires 107, so that the P-type epitaxial layer 104 is electrically connected to the P electrode 105.

[0104] In one embodiment, the first substrate is a COMS plate.

[0105] In one embodiment, the packaging cover plate 114 is bonded to the first substrate through the bonding layer 112.

[0106] In addition, according to an embodiment of the present application, there is also provided a manufacturing method of an electronic device, comprising the manufacturing method of the LED chip according to any one of the preceding embodiments of the present application.

[0107] Finally, according to an embodiment of the present application, there is also provided an electronic device comprising the LED chip according to any one of the preceding embodiments of the present application.

[0108] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement to part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for manufacturing an LED chip, characterized in that, include: A module structure of several LED chips bonded with a temporary transfer substrate is formed; The LED chip module structure includes: an N-type epitaxial layer, a light-emitting layer, and a P-type epitaxial layer stacked sequentially; wherein the P-type epitaxial layer and the light-emitting layer are formed on a portion of the N-type epitaxial layer to expose a portion of the N-type epitaxial layer; and the temporary transfer substrate is bonded to the P-type epitaxial layer. A first substrate is provided; the first substrate includes a plurality of first substrate units; the first substrate unit includes an N electrode and a P electrode; wherein the positions of the N electrode and the P electrode on the first substrate are respectively adapted to the positions of the corresponding N-type epitaxial layer and the P-type epitaxial layer in the LED chip module structure; The N-type epitaxial layer in the LED chip module structure is bonded to the corresponding first substrate unit, and the temporary transfer substrate is removed to transfer the entire LED chip module structure onto the first substrate. Electrically connecting the P-type epitaxial layer to the corresponding P electrode and the N-type epitaxial layer to the corresponding N electrode in each LED chip module structure includes: connecting the N-type epitaxial layer to the corresponding N electrode via metal traces, so that the N-type epitaxial layer is electrically connected to the N electrode; and connecting the P-type electrode to the corresponding P electrode via the metal traces, so that the P-type epitaxial layer is electrically connected to the P electrode. The aforementioned LED chip modules are then encapsulated as a whole.

2. The method for manufacturing an LED chip according to claim 1, characterized in that, The size of the first substrate unit is adapted to the size of the LED chip module structure.

3. The method for manufacturing an LED chip according to claim 2, characterized in that, A module structure of several LED chips bonded to a temporary transfer substrate is formed, specifically including: The plurality of LED chip module structures are formed on the substrate; Provide the temporary transfer substrate with a bonding layer; The temporary transfer substrate is bonded to the first side of the substrate via the bonding layer; the first side of the substrate represents the side on the substrate where the plurality of LED chip module structures are formed; The substrate is peeled off to form the plurality of LED chip module structures bonded with the temporary transfer substrate.

4. The method for manufacturing an LED chip according to claim 3, characterized in that, A plurality of the aforementioned LED chip module structures are formed on the substrate, specifically including: Provide one of the aforementioned substrates; The N-type epitaxial layer, the light-emitting layer, and the P-type epitaxial layer are sequentially formed on the substrate; The N-type epitaxial layer, the light-emitting layer, and the P-type epitaxial layer are etched to expose a portion of the substrate and a portion of the N-type epitaxial layer surrounding the substrate, such that the P-type epitaxial layer and the light-emitting layer are formed on a portion of the N-type epitaxial layer to form the plurality of LED chip module structures on the substrate.

5. The method for manufacturing an LED chip according to claim 4, characterized in that, The substrate is a composite patterned sapphire substrate; the composite patterned sapphire substrate includes a sapphire blue substrate and a patterned structure layer formed on the sapphire blue substrate; wherein, the plurality of LED chip module structures are formed on the patterned structure layer.

6. The method for manufacturing an LED chip according to claim 5, characterized in that, After stripping the substrate to form the plurality of LED chip module structures bonded with the temporary transfer substrate, the method further includes: The patterned structure layer is removed to form the plurality of LED chip module structures bonded to the temporary transfer substrate.

7. The method for manufacturing an LED chip according to claim 6, characterized in that, The overall packaging of the aforementioned LED chip modules specifically includes: Provide a package cover; The encapsulation cover is bonded to the first substrate to form the encapsulated LED chip, thereby encapsulating a plurality of LED chip modules as a whole.

8. An LED chip, characterized in that, The LED chip is manufactured using the method of any one of claims 1-7, comprising: A first substrate; the first substrate includes a plurality of first substrate units; the first substrate unit includes an N electrode and a P electrode; A plurality of LED chip module structures are provided; each LED chip module structure includes: an N-type epitaxial layer, a light-emitting layer, and a P-type epitaxial layer stacked sequentially; wherein the P-type epitaxial layer and the light-emitting layer are formed on a portion of the N-type epitaxial layer to expose a portion of the N-type epitaxial layer; the P-type epitaxial layer in each LED chip module structure is electrically connected to a corresponding P-electrode, and the N-type epitaxial layer is electrically connected to a corresponding N-electrode; wherein the N-type epitaxial layer in each LED chip module structure is bonded to a corresponding first substrate unit, such that the plurality of LED chip module structures are formed on the plurality of first substrates; Encapsulation cover plate; the encapsulation cover plate is bonded to the first substrate so that the LED chip is entirely encapsulated on the encapsulation cover plate; Several metal traces are provided; the N-type epitaxial light-emitting layer is connected to the N electrode through the metal traces, so that the N-type epitaxial layer is electrically connected to the N electrode; the P-type epitaxial layer is connected to the P electrode through the metal traces, so that the P-type epitaxial layer is electrically connected to the P electrode.

9. The LED chip according to claim 8, characterized in that, The first substrate is a CMOS board.

10. The LED chip according to claim 9, characterized in that, The encapsulation cover is bonded to the first substrate via an adhesive layer.

11. A method for manufacturing an electronic device, characterized in that, The method of manufacturing an LED as described in any one of claims 1-7.

12. An electronic device, characterized in that, Includes the LED chip as described in any one of claims 8-10.

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