Solid-state imaging device and solid-state imaging apparatus

Abstract

Embodiments provide a solid-state imaging element and a solid-state imaging device capable of suppressing color shift. According to this embodiment, the solid-state imaging element includes a plurality of pixels arranged sequentially along a first direction. The plurality of pixels include a planar photoelectric conversion portion and a planar filter corresponding to the shape of the photoelectric conversion portion that transmits light within a specific wavelength range. The filter has a shape such that its width in the first direction differs with respect to a second direction orthogonal to the first direction.

Description

[0001] This application claims priority to Japanese Patent Application No. 2021-149630 (Filing date: September 14, 2021). This application incorporates the entire contents of the base application by reference thereto. TECHNICAL FIELD

[0002] Embodiments of the present application relate to a solid-state imaging device and a solid-state imaging apparatus. BACKGROUND

[0003] Conventionally, there is a solid-state imaging apparatus that has a pixel array in which a plurality of pixels are arranged, a photoelectric conversion section such as a photodiode is provided at each pixel, and an imaging image is generated based on a pixel signal acquired by each photoelectric conversion section.

[0004] Each pixel column of the pixel array sequentially reads the same position of a document image by a mechanical scanning operation. However, due to an operation error of the mechanical scanning operation, images of positions shifted by a certain amount are respectively read. In such a case, color shift can occur in the reproduced image. SUMMARY

[0005] Embodiments of the present application provide a solid-state imaging device and a solid-state imaging apparatus that can suppress color shift.

[0006] According to the present embodiment, the solid-state imaging device has a plurality of pixels arranged in a first direction. The plurality of pixels has a planar photoelectric conversion section and a planar filter that passes light of a specific wavelength range corresponding to the shape of the photoelectric conversion section. The filter has a shape in which the width in the first direction is different with respect to a second direction orthogonal to the first direction. BRIEF DESCRIPTION OF DRAWINGS

[0007] Figure 1 is a block diagram showing one example of the schematic configuration of a solid-state imaging apparatus.

[0008] Figure 2 is a diagram showing an example of the arrangement of a pixel group 1.

[0009] Figure 3 is a diagram showing an example of the circuit configuration of a pixel.

[0010] Figure 4 is a diagram showing one example of a waveform chart of a solid-state imaging apparatus.

[0011] Figure 5A is a diagram showing an example of the arrangement of a pixel group.

[0012] Figure 5B is a diagram showing an example of the arrangement of a pixel group.

[0013] Figure 6A is a view showing a pixel arrangement example of Comparative Example 2.

[0014] Figure 6B is a view in which pixel groups are arranged at a 1-pixel pitch in the longitudinal direction.

[0015] Figure 7 is a view showing a structure example of a pixel group to which Modification Example 1 is applied.

[0016] Figure 8 is a view showing a structure example of a pixel group to which Modification Example 2 is applied.

[0017] Figure 9 is a view showing a structure example of a pixel group to which Modification Example 3 is applied.

[0018] Figure 10 is a view showing a structure example of a pixel group to which Modification Example 4 is applied.

[0019] Figure 11 is a view showing a structure example of a pixel group to which Modification Example 5 is applied.

[0020] Figure 12 is a view showing a structure example of a pixel group to which Modification Example 6 is applied.

[0021] Figure 13 is a view showing a structure example of a pixel group to which Modification Example 7 is applied. DETAILED DESCRIPTION

[0022] Hereinafter, an embodiment of the present application will be described with reference to the accompanying drawings. In the following embodiment, a characteristic structure and operation within the solid-state imaging device are described as the center, but the structure and operation omitted in the following description can be present in the solid-state imaging device.

[0023] (One Embodiment)

[0024] Use Figures 1-3 A structure example of the solid-state imaging device 1 will be described. Figure 1 is a block diagram showing one example of the schematic structure of the solid-state imaging device 1. Figure 2 is a view showing an arrangement example of the pixel group 10gr of the solid-state imaging device 1. Figure 3 is a view showing a circuit structure example of the pixel 10. The solid-state imaging device 1 is, for example, a linear image sensor in which pixels are arranged in a straight line. In addition, the solid-state imaging device 1 is a device that acquires image information of a reading target by relatively moving with respect to the reading target.

[0025] As Figure 1As shown, the solid-state imaging device 1 includes a solid-state imaging element 2 and a control circuit 40. The solid-state imaging element 2 includes a plurality of pixel groups 10gr, an output circuit 20, and an output terminal 30. Each of the pixels R1 to Rn, G1 to Gn, and B1 to Bn constituting the plurality of pixel groups 10gr outputs a pixel signal V to the output terminal 30 via the output circuit 20. Each of the pixels R1 to Rn, G1 to Gn, and B1 to Bn is controlled by the control circuit 40. Each of the pixels R1 to Rn, G1 to Gn, and B1 to Bn includes a photoelectric conversion unit (light-receiving element) 11; color filters R, G, and B corresponding to the light-receiving element 11; a charge transfer circuit 12; and a charge-voltage conversion circuit 13. The photoelectric conversion layer S10 and the control element layer S20 form, for example, a stacked structure. Specifically, the color filters R, G, and B corresponding to the light-receiving element 11 are formed in the photoelectric conversion layer S10, while the charge transfer circuit 12, the charge-voltage conversion circuit 13, and the output circuit 20 are formed in the control element layer S20. This structure improves the aperture ratio of each pixel R1 to Rn, G1 to Gn, and B1 to Bn compared to a case where the charge transfer circuit 12, the charge-voltage conversion circuit 13, and the output circuit 20 are formed in the same layer.

[0026] like Figure 2 As shown, the pixel group 10gr includes a red pixel R1 having a red filter R that transmits red light, a green pixel G1 having a green filter G that transmits green light, and a blue pixel B1 having a blue filter B that transmits blue light. More specifically, partition walls that suppress color mixing are provided at the boundaries of the photoelectric conversion elements constituting the red pixel R1, the green pixel G1, and the blue pixel B1. In addition, a red filter R, a green filter G, and a blue filter B are respectively arranged at the pixel openings of each photoelectric conversion element of the photoelectric conversion layer S10. Here, the 1-pixel pitch corresponds to the resolution of each pixel. That is, in this embodiment, the red pixel R1, the green pixel G1, and the blue pixel B1 are arranged within a 1-pixel pitch in the main scanning direction X (first direction) and a 1-pixel pitch in the sub-scanning direction Y (second direction). In addition, the color filters involved in this embodiment are R, G, and B, but are not limited to this. For example, a combination of cyan, magenta, yellow, green, etc. may also be used.

[0027] Thus, the red pixel R1, the green pixel G1, and the blue pixel B1 are arranged by dividing the longitudinal 1-pixel pitch and the lateral 1-pixel pitch into three parts. Further, the red filter R, the green filter G, and the blue filter B each have a shape in which the width in the main scanning direction X differs with respect to the sub-scanning direction Y (2nd direction). For example, in a case where the width of the red filter R in the main scanning direction X gradually increases with respect to the sub-scanning direction Y, the width of the blue filter B in the main scanning direction X gradually decreases with respect to the sub-scanning direction Y. That is, with respect to the sub-scanning direction Y, the red filter R has a certain width up to a predetermined point PR1, and when the predetermined point PR1 is exceeded, the width becomes wider than the certain width. Further, the total of the widths of the red filter R, the green filter G, and the blue filter B in the main scanning direction X is the width value of the 1-pixel pitch corresponding to the resolution in the main scanning direction X.

[0028] More specifically, the green pixel G1 having a shape sandwiched by the L-shaped red pixel R1 and the L-shaped blue pixel B1 obtained by rotating the L-shaped red pixel R1 by 180 degrees is arranged. The shape of the red pixel R1, the shape of the green pixel G1, and the shape of the blue pixel B1 are different. With respect to the pixel opening in the main scanning direction X, any color becomes large, for example, has a spread of two-thirds of the 1-pixel pitch, and more information of the color distribution in the main scanning direction X can be obtained. Further, the pixel opening in the sub-scanning direction Y in the longitudinal direction also has a width of the amount of the 1-pixel pitch, and the pixel sensitivity becomes higher. Further, the green pixel G1 is arranged at the center of gravity of the longitudinal 1-pixel pitch and the lateral 1-pixel pitch. That is, the main region AG of the green pixel G1 is arranged at the center of gravity of the pixel group 10gr. Thus, the opening of the green pixel G1 is set wide at the center of the pixel pitch, and thus, even when a mechanical shift in the main scanning direction X or the sub-scanning direction Y occurs at the time of reading, it is easy to obtain the outline of the image in the longitudinal 1-pixel pitch and the lateral 1-pixel pitch.

[0029] The pixel group 10gr configured of the red pixel R1, the green pixel G1, and the blue pixel B1 is arranged in a one-dimensional column in the main scanning direction X. Thus, in the present embodiment, along the main scanning direction X, the 1st color pixel R1 to Rn as the red pixel, the 2nd color pixel G1 to Gn as the green pixel, and the 3rd color pixel B1 to Bn as the blue pixel are alternately arranged in order. Further, in the present embodiment, when all or a part of the 1st color pixel R1 to Rn is indicated, it is referred to as the 1st color pixel R, when all or a part of the 2nd color pixel G1 to Gn is indicated, it is referred to as the 2nd color pixel G, and when all or a part of the 3rd color pixel B1 to Bn is indicated, it is referred to as the 3rd color pixel B. Further, when all or a part of the 1st color pixel R1 to Rn, the 2nd color pixel G1 to Gn, and the 3rd color pixel B1 to Bn is indicated, it is referred to as the pixel 10.

[0030] As shown in FIG. 1, the light-receiving element 11 is connected to a ground voltage at an anode and to the charge transfer circuit 12 at a cathode. The light-receiving element 11 photoelectrically converts incident light when exposed to light and accumulates signal charges. The light-receiving element 11 can also be composed of a photodiode capable of photoelectric conversion, for example. Figure 3

[0031] The charge transfer circuit 12 reads out signal charges from the light-receiving element 11 and transfers them to the charge voltage conversion circuit 13. The charge transfer circuit 12 has a read gate Al, an accumulation gate A2, a barrier gate A3, an accumulation diode D, and a transfer gate A4. The read gate Al, the accumulation gate A2, the barrier gate A3, and the transfer gate A4 are connected in series.

[0032] The read gate Al reads out signal charges accumulated in the light-receiving element 11 to the accumulation gate A2 in accordance with a read signal RD input from the control circuit 40. The accumulation gate A2 accumulates signal charges read out from the read gate Al with an accumulation charge amount corresponding to an accumulation signal ST input from the control circuit 40.

[0033] The barrier gate A3 transfers signal charges accumulated in the accumulation gate A2 to the accumulation diode D in accordance with a barrier signal BG input from the control circuit 40. The cathode of the accumulation diode D is connected to the output of the barrier gate A3 and the input of the transfer gate A4, and the anode is connected to a ground voltage. The accumulation diode D accumulates signal charges transferred from the barrier gate A3. The transfer gate A4 transfers signal charges accumulated in the accumulation diode D to the charge voltage conversion circuit 13 in accordance with a transfer signal SH input from the control circuit 40.

[0034] The charge voltage conversion circuit 13 converts signal charges transferred from the charge transfer circuit 12 into a signal voltage and outputs a pixel signal V to the output circuit 20. The charge voltage conversion circuit 13 has a floating diffusion FD, a reset transistor Trl, an amplification transistor Tr2, an address transistor Tr3, and a constant current source Sc. The reset transistor Trl, the amplification transistor Tr2, and the address transistor Tr3 are each composed of an n-type transistor, for example, but can also be composed of a p-type transistor.

[0035] ​The floating diffusion FD includes a capacitor C. One end of capacitor C is connected to transfer gate A4 and the gate of amplifier transistor Tr2, and the other end is connected to ground. Capacitor C converts the signal charge transferred from transfer gate A4 into a signal voltage. Reset transistor Tr1 has one end connected to a reference voltage and the other end connected to the floating diffusion FD. Reset transistor Tr1 connects the floating diffusion FD to the reference voltage in response to a reset signal RS input from control circuit 40, thereby discharging the signal charge.

[0036] One end of the amplifier transistor Tr2 is connected to a power supply voltage, and the other end is connected to the address transistor Tr3 and the output circuit 20. When connected to the constant current source Sc, the amplifier transistor Tr2 performs a source follower operation and outputs a pixel signal V to the output circuit 20 in accordance with the signal voltage of the floating diffusion portion FD input to the gate.

[0037] The address transistor Tr3 is provided between the other end of the amplifier transistor Tr2 and the constant current source Sc. The gate of the address transistor Tr3 is connected to the control circuit 40. The constant current source Sc and the amplifier transistor Tr2 are connected or disconnected based on the address signal AD input from the control circuit 40. The constant current source Sc is provided between the amplifier transistor Tr2 and the ground voltage.

[0038] For example Figure 1 As shown, the output circuit 20 includes an output circuit 21 connected to the first color pixel R, an output circuit 22 connected to the second color pixel G, and an output circuit 23 connected to the third color pixel B. The output circuit 20 performs predetermined signal processing, such as amplification, on the pixel signals V input from each of the pixels R1 to Rn, G1 to Gn, and B1 to Bn, and outputs the signals to an output terminal 30. The output terminal 30 includes an output terminal 31 connected to the output circuit 21 and outputting a pixel signal Vr corresponding to each of the pixels R1 to Rn; an output terminal 32 connected to the output circuit 22 and outputting a pixel signal Vg corresponding to each of the pixels G1 to Gn; and an output terminal 33 connected to the output circuit 23 and outputting a pixel signal Vb corresponding to each of the pixels B1 to Bn. For example, when the pixel signals Vr, Vg, and Vb are A / D-converted into image data, the RGB arrangement data is associated with the same coordinate data for each pixel group 10gr. For example, the same coordinates (x, y) as those for Vr (x, y), Vg (x, y), and Vb (x, y) are assigned to the data of the same pixel group 10gr. Furthermore, the coordinates (x, y) are assigned for every pixel pitch in the main scanning direction, and the coordinates (y) are assigned for every pixel pitch in the sub-scanning direction.

[0039] The control circuit 40 is constituted by, for example, a shift register. The control circuit 40 outputs a read signal RD to perform readout instruction of the signal charge accumulated in the light-receiving element 11. More specifically, the control circuit 40 outputs the read signal RD in accordance with the exposure period of each pixel group 10gr. When the read signal RD becomes an OFF (inactive) state, the read gate Al becomes a cut-off state, and the signal charge is accumulated in the light-receiving element 11. When the read signal RD becomes an ON (active) state, the read gate Al becomes a connected state, and the signal charge is read from the light-receiving element 11 to the accumulation gate A2.

[0040] In addition, the control circuit 40 outputs an accumulation signal ST of a predetermined voltage to the accumulation gate A2. The control circuit 40 outputs a barrier signal BG to perform transfer instruction of the signal charge of the accumulation gate A2 of each pixel group 10gr before the start of the signal output period. For example, the control circuit 40 can also output the barrier signal BG to all the pixels R1 to Rn, G1 to Gn, and B1 to Bn at the same time before the start of the signal output period. When the barrier signal BG becomes an ON state, the signal charge is read from the accumulation gate A2 to the accumulation diode D. When the barrier signal BG becomes an OFF state, the accumulation diode D is cut off from the accumulation gate A2.

[0041] In addition, the control circuit 40 outputs a transfer signal SH corresponding to the position in the main scanning direction X of the pixel group 10gr in the signal output period to perform transfer instruction of the signal charge. When the transfer signal SH becomes an ON state, the signal charge is transferred from the accumulation diode D to the floating diffusion portion FD. When the transfer signal SH becomes an OFF state, the floating diffusion portion FD is cut off from the accumulation diode D.

[0042] In addition, the control circuit 40 outputs an address signal AD to also perform output instruction of the pixel signal V. When the address signal AD becomes an ON state, the amplification transistor Tr2 and the constant current source Sc are connected, and the pixel signal V corresponding to the signal voltage of the floating diffusion portion FD is output to the output circuit 20. After the pixel signal V of each pixel 10 is output, the control circuit 40 makes the address signal AD an OFF state, and cuts off the constant current source Sc from the amplification transistor Tr2.

[0043] In addition, the control circuit 40 outputs a reset signal RS after the pixel signal V of each pixel 10 is output to perform reset instruction of the signal charge. When the reset signal RS becomes an ON state, the reference voltage and the floating diffusion portion FD are set to a connected state, and the floating diffusion portion FD is reset. That is, the accumulation gate A2 constitutes a front-stage accumulation portion. The accumulation diode D constitutes a rear-stage accumulation portion.

[0044] (Action)

[0045] Next, the action of the solid-state imaging device 1 according to the embodiment will be described. Figure 4is a diagram showing one example of a waveform chart of the read signal RD, the barrier signal BG, the transfer signal SH, and the pixel signal V of the solid-state imaging device 1 according to the embodiment.

[0046] At time T1, when the control circuit 40 outputs the read signal RDr in the OFF state, the light-receiving elements 11 and the charge transfer circuit 12 become in the cutoff state, and the light-receiving elements 11 of the pixels R1 to Rn, G1 to Gn, and B1 to Bn start to accumulate the signal charge generated by exposure. Time T1 to time T3a is the exposure period Pr1.

[0047] At time T3, when the control circuit 40 outputs the read signal RDr in the ON state, the read gate A1 of the pixels R1 to Rn, G1 to Gn, and B1 to Bn reads the signal charge from the light-receiving elements 11 to the accumulation gate A2 until time T3a at which the read signal RDr is output in the OFF state. The accumulation gate A2 of the 1st color pixel R accumulates the signal charge in the accumulation period Pc1 from time T3a to time Ts.

[0048] When it becomes time Ts, the signal output period Ps starts. At time Ts, when the control circuit 40 outputs the barrier signal BG in the ON state, the barrier gate A3 of the pixels R1 to Rn, G1 to Gn, and B1 to Bn transfers the signal charge from the accumulation gate A2 to the accumulation diode D.

[0049] Next, when the control circuit 40 outputs the transfer signals SH1 to SHn in the ON state, the transfer gates A4 of the respective pixel groups 10gr arranged in the main scanning direction X sequentially transfer the signal charge from the accumulation diodes D to the floating diffusion section FD.

[0050] When the control circuit 40 outputs the address signal AD in the ON state, the amplification transistors Tr2 of the respective pixel groups 10gr arranged in the main scanning direction X sequentially output the pixel signals V corresponding to the signal voltage of the floating diffusion section FD.

[0051] More specifically, the 1st color pixel R outputs the pixel signal Vr corresponding to the signal charge accumulated in the exposure period Pr1 to the output circuit 21. The 2nd color pixel G outputs the pixel signal Vg corresponding to the signal charge accumulated in the exposure period Pr1 to the output circuit 22. The 3rd color pixel B also outputs the pixel signal Vb corresponding to the signal charge accumulated in the exposure period Pr1 to the output circuit 23. In this way, each pixel within the pixel group 10gr outputs the pixel signals Vr, Vg, and Vb at the same timing. Furthermore, the output circuit 20 amplifies the pixel signals V and outputs to the output terminal 30.

[0052] (Comparison with Comparative Example)

[0053] Figure 5Ais a drawing showing a pixel arrangement example of Comparative Example 1. In Comparative Example 1, the same shape of red pixel Rn, green pixel Gn, and blue pixel Bn is arranged in a pixel group 10gra within a 1-pixel pitch in the main scanning direction X and a 1-pixel pitch in the sub-scanning direction Y. In this example, the rectangular red pixel Rn, green pixel Gn, and blue pixel Bn are made to be side by side along the main scanning direction X.

[0054] Figure 5B is a drawing in which the pixel group 10gr related to the present embodiment and the pixel group 10gra related to Comparative Example 1 are arranged in a 1-pixel pitch. In Figure 5B is shown in which the photographic subject A100 has red regions Ar0, Ar1, Ar2 at a white background. One side of the quadrangle represents a 1-pixel pitch. As described above, the width RX of the region RY of the red pixel in the present embodiment is, for example, made to be wider than one-half of the 1-pixel pitch. In contrast, the width RXa of the red pixel in Comparative Example 1 is, for example, made to be narrower than one-sixth of the 1-pixel pitch.

[0055] Therefore, as shown in Figure 5B is shown in which the solid-state imaging element 2 is made to take a photograph with a 1-pixel pitch offset at timings tl, t2 in the sub-scanning direction Y. In the photograph at timing tl, the red pixel in the present embodiment is able to acquire red color information of the red regions Ar1, Ar2, but in Comparative Example 1, it is difficult to acquire the information. On the other hand, in the photograph at timing t2, both the red pixel in the present embodiment and the red pixel in Comparative Example 1 are able to acquire red color information of the red region Ar3. As can be understood from this, the red pixel in the present embodiment is able to acquire color information of the red regions Ar0, Ar1, Ar2, and therefore, the image signals generated at timings tl, t2 have information of red. In contrast, the red pixel in Comparative Example 1 is unable to acquire red information at timing tl, and outputs an image signal corresponding to white, resulting in color deviation. In addition, in the red pixel in Comparative Example 1, red information is able to be acquired at timing t2, and therefore, unevenness in the hue of red is generated at timing tl and timing t2.

[0056] The same applies to the blue pixel and the green pixel. In other words, even if a mechanical shift in the main scanning direction X occurs at the time of reading, the possibility of acquiring color information is higher in the pixels of each color in the present embodiment than in Comparative Example 1, and color deviation can be suppressed as compared with Comparative Example 1. Further, in the present embodiment, a deviation of the actual color of the photographic subject A100 from the color reproduced in the image of the image signal V output from the solid-state imaging element 2 is referred to as color deviation.

[0057] Figure 6Ais a drawing showing a pixel arrangement example of Comparative Example 2. In Comparative Example 2, the same shape of red pixel Rn, green pixel Gn, and blue pixel Bn is arranged in a pixel group 10grb within a 1-pixel pitch in the main scanning direction X and a 1-pixel pitch in the sub-scanning direction Y. In this example, the rectangular shape of red pixel Rn, green pixel Gn, and blue pixel Bn are arranged side by side along the sub-scanning direction Y.

[0058] Figure 6B is a drawing showing a pixel group 10gr of the present embodiment and a pixel group 10grb of Comparative Example 2 arranged in a 1-pixel pitch. The width RYa of the red pixel of Comparative Example 2 in the sub-scanning direction Y is one third of the 1-pixel pitch, for example. In contrast, the width RY of the red pixel of the present embodiment in the sub-scanning direction Y is one of the 1-pixel pitch.

[0059] Therefore, the red pixel of the present embodiment, for example, is able to acquire red information of red regions Ar3, Ar4, but in the comparative example, it is difficult to acquire red information of red region Ar4. In this way, the red pixel of the present embodiment has a higher possibility of acquiring red information distributed in the sub-scanning direction Y than Comparative Example 2. Thus, compared to Comparative Example 2, color shift can be suppressed. The same applies to the blue pixel and the green pixel. In other words, even if a mechanical shift in the sub-scanning direction Y occurs at the time of reading, the pixel of each color of the present embodiment has a higher possibility of acquiring color information than Comparative Example 2, and compared to Comparative Example 2, color shift can be suppressed.

[0060] In addition, both Comparative Examples 1 and 2 have a part of the charge transfer circuit 12 and the charge voltage conversion circuit 13 formed in the photoelectric conversion layer S10, and there is a limit to the aperture ratio. In contrast, the solid-state imaging device 1 of the present embodiment has the charge transfer circuit 12, the charge voltage conversion circuit 13, and the output circuit 20 formed in the control element layer S20 as described above. Therefore, the aperture ratio within the longitudinal 1-pixel pitch and the lateral 1-pixel pitch of the red pixel R1, the green pixel G1, and the blue pixel B1 of the present embodiment can be made larger than that of Comparative Examples 1 and 2. Thus, the sensitivity of the red pixel R1, the green pixel G1, and the blue pixel B1 of the present embodiment is higher than that of Comparative Examples 1 and 2.

[0061] As explained above, according to the present embodiment, the solid-state imaging device 2 has the light filters R, G, B of the planar shape that pass light of a specific wavelength range corresponding to the shape of the photoelectric conversion section 11, and the light filters R, G, B have shapes in which the width in the main scanning direction X differs for the sub-scanning direction Y (the 2nd direction) orthogonal to the main scanning direction X (the 1st direction). Thereby, it is possible to further increase the imaging regions of each pixel constituting the 1-pixel group for the main scanning direction X and the sub-scanning direction Y. Therefore, it is possible to further suppress color deviation of a reproduced image of an image signal using the solid-state imaging device 2.

[0062] (Modified Example 1)

[0063] Figure 7 is a view showing a structure example of the pixel group 10gr involved in the modified example 1. As shown in Figure 7 the sub-scanning direction Y of the red pixel Rn, the green pixel Gn, and the blue pixel Bn is made larger than 1 times and smaller than 2 times the pixel pitch, unlike the pixel example involved in the 1st embodiment. That is, the solid-state imaging device 1 involved in the modified example 1 can make the imaging regions of the image data overlap in the sub-scanning direction Y.

[0064] Thus, the pixel group 10grc involved in the modified example 1 is smaller than 2 pixel pitches in the vertical direction, and 1 pixel pitch in the horizontal direction is divided into 3 parts. The green pixel Gn of the shape sandwiched by the blue pixel Bn and the red pixel Rn of the L shape is arranged, and the red pixel Rn is a shape obtained by rotating the blue pixel Bn by 180 degrees. The shape of the blue pixel Bn, the shape of the green pixel Gn, and the shape of the red pixel Rn are different. For the pixel opening in the sub-scanning direction Y involved in the modified example 1, any color is larger than the solid-state imaging device 1 involved in the 1st embodiment, and it is possible to further improve the sensitivity.

[0065] In addition, the main region AG of the green pixel Gn is arranged at the center of gravity of the pixel group 10grc. Thereby, in a case where the 1-pixel pitch in the sub-scanning direction Y is shorter than the length of the pixel group 10grc in the sub-scanning direction Y, the opening of the main region AG of the green pixel Gn is also arranged within the 1-pixel pitch. Thereby, in a case where the imaging regions of the image data overlap in the sub-scanning direction Y, it is easy to obtain the outline of the image within the 1-pixel pitch in the vertical direction and the 1-pixel pitch in the horizontal direction.

[0066] (Modified Example 2)

[0067] Figure 8 is a view showing a structure example of the pixel group 10grd involved in the modified example 2. As shown in Figure 8As shown, red pixels Rn, green pixels Gn, and blue pixels Bn are arranged by dividing the image into three sections within a 1-pixel pitch in the vertical direction and a 1-pixel pitch in the horizontal direction. More specifically, the green pixel Gn is arranged in a shape sandwiched between the blue pixel Bn and the red pixel Rn. The blue pixel Bn is a triangle added to a rectangle, and the red pixel Rn is a shape obtained by rotating the blue pixel Bn 180 degrees. The shapes of the blue pixel Bn, the green pixel Gn, and the red pixel Rn are different. The pixel opening in the main scanning direction X is enlarged for all colors, for example, by two-thirds of a 1-pixel pitch, which allows for more information on the color distribution in the main scanning direction X. In addition, the pixel opening in the vertical sub-scanning direction Y also has a width of a 1-pixel pitch, further enhancing pixel sensitivity. Furthermore, the green pixel Gn is arranged at the center of gravity of the 1-pixel pitch in the vertical direction and the 1-pixel pitch in the horizontal direction. In other words, the main area AG of the green pixel Gn is arranged at the center of gravity of the pixel group 10grd. Therefore, the opening of the green pixel Gn is set in a large area at the center of the pixel pitch. Therefore, even if a mechanical offset occurs in the main scanning direction X or the sub-scanning direction Y during reading, it is easy to obtain the outline of the image within the vertical 1 pixel pitch and the horizontal 1 pixel pitch.

[0068] (Variation 3)

[0069] Figure 9 1 is a diagram showing a structural example of the pixel group 10gre according to Modification 3. Figure 9 As shown, the pixel example according to Modification 2 differs from the pixel example according to Modification 3 in that the size of the red pixel Rn, the green pixel Gn, and the blue pixel Bn in the sub-scanning direction Y is greater than 1 times and less than 2 times the pixel pitch. In other words, the solid-state imaging device 1 according to Modification 3 can cause the imaging areas of image data to overlap in the sub-scanning direction Y.

[0070] Thus, the pixel group 10gre according to Modification 3 has a vertical pitch smaller than two pixels and is divided into three parts with a horizontal pitch of one pixel. More specifically, a green pixel Gn is arranged in a shape sandwiched between a blue pixel Bn (a triangle added to a rectangle) and a red pixel Rn (a shape obtained by rotating the blue pixel Bn 180 degrees). The pixel aperture in the sub-scanning direction Y is larger for all colors than that of the solid-state imaging device 1 according to Modification 2, further improving sensitivity.

[0071] Furthermore, the main area AG of the green pixels Gn is arranged at the center of gravity of the pixel group 10gre. Therefore, even when the one-pixel pitch in the sub-scanning direction Y is shorter than the length of the pixel group 10gre in the sub-scanning direction Y, the opening of the main area AG of the green pixels Gn is arranged within the one-pixel pitch. Consequently, even when the image data capture areas overlap in the sub-scanning direction Y, it is easier to obtain the outline of the image within the one-pixel pitch in the vertical direction and the one-pixel pitch in the horizontal direction.

[0072] (Variation 4)

[0073] Figure 10 1 is a diagram showing a structural example of a pixel group 10grf according to Modification Example 2. Figure 10 As shown, the red pixel Rn, green pixel Gn, and blue pixel Bn are arranged by dividing the image into three sections within a 1-pixel pitch in the vertical direction and a 1-pixel pitch in the horizontal direction. More specifically, the green pixel Gn is sandwiched between the blue pixel Bn and the red pixel Rn. The blue pixel Bn is formed by superimposing two triangles on a "コ" shape, while the red pixel Rn is formed by rotating the blue pixel Bn shape 180 degrees. The shapes of the blue pixel Bn, green pixel Gn, and red pixel Rn are different. The pixel opening in the main scanning direction X is enlarged for all colors, for example, by two-thirds of a 1-pixel pitch, enabling more information on the color distribution in the main scanning direction X to be obtained. Furthermore, the pixel opening in the vertical sub-scanning direction Y also has a width of a 1-pixel pitch, further enhancing pixel sensitivity. Furthermore, the green pixel Gn is arranged at the center of gravity of the 1-pixel pitch in the vertical direction and the 1-pixel pitch in the horizontal direction. In other words, the main area AG of the green pixel Gn is arranged at the center of gravity of the pixel group 10grf. Therefore, the opening of the green pixel Gn is set in a large area at the center of the pixel pitch. Therefore, even if a mechanical offset occurs in the main scanning direction X or the sub-scanning direction Y during reading, it is easy to obtain the outline of the image within the vertical 1 pixel pitch and the horizontal 1 pixel pitch.

[0074] (Variant 5)

[0075] Figure 11 1 is a diagram showing a structural example of a pixel group 10grf according to Modification Example 5. Figure 11 As shown, the pixel example according to Modification 2 differs from the pixel example according to Modification 3 in that the size of the red pixel Rn, the green pixel Gn, and the blue pixel Bn in the sub-scanning direction Y is greater than 1 times and less than 2 times the pixel pitch. In other words, the solid-state imaging device 1 according to Modification 3 can cause the imaging areas of image data to overlap in the sub-scanning direction Y.

[0076] Thus, the pixel group 10grf according to Modification 5 has a vertical pitch smaller than two pixels and is divided into three parts with a horizontal pitch of one pixel. More specifically, a green pixel Gn is arranged in a shape sandwiched between a blue pixel Bn (a U-shaped pixel formed by superimposing two triangles) and a red pixel Rn (a red pixel Rn formed by rotating the blue pixel Bn 180 degrees). The pixel aperture in the sub-scanning direction Y is larger for all colors than that of the solid-state imaging device 1 according to Modification 4, further improving sensitivity.

[0077] Furthermore, the main area AG of the green pixels Gn is arranged at the center of gravity of the pixel group 10grf. Thus, even when the one-pixel pitch in the sub-scanning direction Y is shorter than the length of the pixel group 10grf in the sub-scanning direction Y, the opening of the main area AG of the green pixels Gn is arranged within the one-pixel pitch. Consequently, even when the image data capture areas overlap in the sub-scanning direction Y, it is easier to obtain the outline of the image within the one-pixel pitch in the vertical direction and the one-pixel pitch in the horizontal direction.

[0078] (Variant 6)

[0079] Figure 12 1 is a diagram showing a structural example of a pixel group 10grh according to Modification Example 6. Figure 12 As shown, red pixels Rn, green pixels Gn, and blue pixels Bn are arranged by dividing the area into three parts with a vertical pitch of 1 pixel and a horizontal pitch of 1 pixel. More specifically, a green pixel Gn with a convex shape is arranged, which is sandwiched between a blue pixel Bn with a shape of "ヒ" in Japanese katakana and a red pixel Rn with a shape of "フ" in Japanese katakana. The shapes of the blue pixel Bn, the green pixel Gn, and the red pixel Rn are different. With respect to the pixel opening in the main scanning direction X, any color becomes larger, for example, with a width of two-thirds of the 1 pixel pitch, so that more information on the color distribution in the main scanning direction X can be obtained. In addition, the pixel opening in the vertical sub-scanning direction Y also has a width of 1 pixel pitch, and the pixel sensitivity becomes higher. Furthermore, the green pixel Gn is arranged at the center of gravity of the vertical pitch of 1 pixel and the horizontal pitch of 1 pixel. That is, the main area AG of the green pixel Gn is arranged at the center of gravity of the pixel group 10grh. Therefore, the opening of the green pixel Gn is set in a large area at the center of the pixel pitch. Therefore, even if a mechanical offset occurs in the main scanning direction X or the sub-scanning direction Y during reading, it is easy to obtain the outline of the image within the vertical 1 pixel pitch and the horizontal 1 pixel pitch.

[0080] (Variant 7)

[0081] Figure 13 1 is a diagram showing a structural example of a pixel group 10grj according to Modification 3.Figure 9 As shown, the size of the red pixel Rn, the green pixel Gn, and the blue pixel Bn in the sub-scanning direction Y is made larger than 1 time and smaller than 2 times the pixel pitch, unlike the pixel example related to the modified example 2. That is, the solid-state imaging device 1 related to the modified example 3 can make the imaging region of the image data overlap in the sub-scanning direction Y.

[0082] In this way, the pixel group 10grj related to the modified example 3 is smaller than 2 pixel pitches in the vertical direction, and 1 pixel pitch in the horizontal direction is divided into 3 parts. More specifically, the lower convex-shaped green pixel Gn is arranged with the blue pixel Bn in the shape of "Hi" of the Japanese Kana and the red pixel Rn in the shape of "Fu" of the Japanese Kana sandwiched therebetween. With respect to the pixel opening in the sub-scanning direction Y, any color is larger than the solid-state imaging device 1 related to the modified example 6, and the sensitivity can be further improved.

[0083] In addition, the main region AG of the green pixel Gn is arranged at the center of gravity of the pixel group 10grj. Thereby, in a case where the 1 pixel pitch in the sub-scanning direction Y is shorter than the length of the pixel group 10grj in the sub-scanning direction Y, the opening of the main region AG of the green pixel Gn is also arranged within the 1 pixel pitch. Thereby, in a case where the imaging region of the image data is made to overlap in the sub-scanning direction Y, the outline of the image within the 1 pixel pitch in the vertical direction and the 1 pixel pitch in the horizontal direction is also easily obtained.

[0084] Further, the solid-state imaging device as described in the following supplementary note can be considered.

[0085] (Technical Solution 1)

[0086] A solid-state imaging device includes:

[0087] a plurality of planar-shaped photoelectric conversion sections arranged in order along a first direction;

[0088] a planar-shaped optical filter corresponding to the shape of the photoelectric conversion section, which passes light in a specific wavelength range;

[0089] a charge transfer circuit which reads out signal charges from the plurality of photoelectric conversion sections and transfers the signal charges; and

[0090] a charge voltage conversion circuit which converts the signal charges transferred from the charge transfer circuit into signal voltages and outputs pixel signals to an output circuit,

[0091] the optical filter has a shape in which the width in the first direction is different with respect to a second direction orthogonal to the first direction.

[0092] (Supplementary Note 1)

[0093] The solid-state imaging device according to Technical Solution 1,

[0094] The photoelectric conversion layer and the control element layer are stacked, the photoelectric conversion layer has the photoelectric conversion portion and the optical filter, and the control element layer has the charge transport circuit and the charge-voltage conversion circuit.

[0095] (Paragraph 2)

[0096] The solid-state imaging device according to (1),

[0097] The photoelectric conversion portion is a photodiode.

[0098] (Paragraph 3)

[0099] The solid-state imaging device according to (1),

[0100] The optical filter is at least one of a first optical filter, a second optical filter, and a third optical filter that respectively pass different specific wavelength ranges, and the first optical filter, the second optical filter, and the third optical filter are repeatedly arranged in order.

[0101] (Paragraph 4)

[0102] The solid-state imaging device according to (3),

[0103] In a case where a width of the first optical filter in the first direction gradually increases with respect to the second direction, a width of the third optical filter in the first direction gradually decreases with respect to the second direction.

[0104] (Paragraph 5)

[0105] The solid-state imaging device according to (3),

[0106] A total value of widths of the first optical filter, the second optical filter, and the third optical filter in the first direction is a width value of 1 pixel pitch corresponding to a resolution in the first direction.

[0107] (Paragraph 6)

[0108] The solid-state imaging device according to (3),

[0109] The third optical filter has a shape obtained by rotating the first optical filter by 180 degrees.

[0110] (Paragraph 7)

[0111] The solid-state imaging device according to (3),

[0112] With respect to the second direction, the first optical filter has a certain width up to a predetermined point, and when the predetermined point is exceeded, the width widens compared to the certain width.

[0113] (Paragraph 8)

[0114] The solid-state imaging device according to paragraph 3,

[0115] The first filter corresponds to a red filter, the second filter corresponds to a green filter, and the third filter corresponds to a blue filter.

[0116] (Paragraph 9)

[0117] The solid-state imaging device according to paragraph 3,

[0118] Further comprising a control circuit,

[0119] The control circuit controls an accumulation period of the signal charge.

[0120] (Paragraph 10)

[0121] The solid-state imaging device according to paragraph 9,

[0122] The control circuit controls accumulation periods of pixels in the same group having the first filter, the second filter, and the third filter identically.

[0123] Several embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in other various ways, and various omissions, substitutions, and changes can be made within the scope of the invention without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and spirit of the invention, and are included in the scope of the invention and equivalents thereof as recited in the claims.

Claims

1. A solid-state imaging element comprising: a photoelectric conversion layer; and a control element layer located below the photoelectric conversion layer in the stacking direction and including a charge transfer circuit, a charge-voltage conversion circuit, and an output circuit; The photoelectric conversion layer includes a plurality of pixels arranged along a first direction, The plurality of pixels are arranged into a plurality of pixel groups, each pixel group including a first pixel, a second pixel, and a third pixel adjacently arranged along the first direction. Each pixel group has a first pitch in the first direction and a second pitch in a second direction perpendicular to the first direction and the stacking direction. Each pixel has: a photoelectric conversion unit; and an optical filter located above the photoelectric conversion portion in the stacking direction, The optical filter has a planar shape corresponding to the planar shape of the photoelectric conversion portion, The optical filter of the first pixel is a first optical filter that passes a first wavelength range. The optical filter of the second pixel is a second optical filter that allows the second wavelength range to pass. The optical filter of the third pixel is a third optical filter that allows the third wavelength range to pass. The first wavelength range, the second wavelength range, and the third wavelength range are different wavelength ranges. The first filter, the second filter, and the third filter have different planar shapes. The maximum width of each filter in the first direction is wider than half of the first pitch. The maximum width of each filter in the second direction is wider than half of the second pitch.

2. The solid-state imaging element according to claim 1, When the width of the first filter in the first direction gradually increases with respect to the second direction, the width of the third filter in the first direction gradually decreases with respect to the second direction.

3. The solid-state imaging element according to claim 1, The first pitch corresponds to a pixel resolution of the solid-state imaging element.

4. The solid-state imaging element according to claim 1, The second filter is sandwiched between the first filter and the third filter in the first direction. The third filter has a planar shape corresponding to a planar shape obtained by rotating the first filter by 180 degrees.

5. The solid-state imaging element according to claim 1, In the second direction, the first filter has a certain width up to a predetermined point, and the width becomes wider than the certain width beyond the predetermined point.

6. The solid-state imaging element according to claim 1, The first filter corresponds to a red filter, the second filter corresponds to a green filter, and the third filter corresponds to a blue filter.

7. The solid-state imaging element according to claim 1, The second filter occupies a midpoint position of the pixel group, and the maximum widths of the first filter and the second filter along the second direction are equal to the second pitch.

8. A solid-state imaging device comprising: a plurality of photoelectric conversion sections arranged along a main scanning direction, each photoelectric conversion section having a filter having a planar shape corresponding to the planar shape of the photoelectric conversion section; a charge transfer circuit for reading out signal charges from the plurality of photoelectric conversion portions and transferring them; and A charge-voltage conversion circuit that converts the signal charge transferred from the charge transfer circuit into a signal voltage and outputs a pixel signal to an output circuit; The photoelectric conversion parts are arranged in groups of three, wherein the first part of the group is a first filter, the second part is a second filter, and the third part is a third filter. The first filter, the second filter, and the third filter are respectively configured to pass different specific wavelength ranges. The groups are adjacent to each other along the main scanning direction, Each group has a width of a first pitch in the main scanning direction and a width of a second pitch in the sub-scanning direction orthogonal to the main scanning direction. In the main scanning direction, the maximum width of each filter in each group is wider than half of the first pitch. In the sub-scanning direction, the maximum width of each filter in each group is wider than half of the second pitch.

Images