A non-parallel bonding wire parasitic parameter extraction model and a transmission characteristic optimization method thereof

Abstract

The application belongs to the field of microwave radio frequency technology, and discloses a non-parallel bonding wire parasitic parameter extraction model and a transmission characteristic optimization method thereof. The non-parallel bonding wire parasitic parameter extraction model is used to extract the parasitic parameters of the bonding wire. An equivalent circuit model of the bonding wire is established in Advanced Design System software, and a microstrip single stub matching circuit suitable for the bonding wire is designed by using a Smith chart. After the parameters of the microstrip single stub matching circuit are converted into actual microstrip lines, a microstrip matching structure is designed based on the parasitic parameter extraction model to realize the optimization of the transmission characteristics of the model. The non-parallel bonding wire parasitic parameter extraction model can quickly extract various parasitic parameters of the bonding wire in the circuit design stage without relying on 3D modeling simulation, and can optimize the circuit design to reduce the deterioration of the transmission characteristics of the bonding wire without increasing the volume of the circuit, thereby providing a reference basis for the optimization design of the circuit performance.

Description

TECHNICAL FIELD

[0001] The application belongs to the field of microwave radio frequency technology, and particularly relates to a non-parallel wire bonding parasitic parameter extraction model and a transmission characteristic optimization method thereof. BACKGROUND

[0002] At present, with the performance and morphology of active phased array radars developing towards higher levels, more stringent requirements are put forward for the volume and weight of T / R (Transmitter and Receiver) components, which drives the wire bonding in radio frequency circuits towards ultra-high density, and the trend is that the wire diameter becomes smaller and smaller. Unlike the interconnection wires in low-frequency circuits, the structural parameters of the bonding wires in radio frequency circuits, such as the number, arch height, span, wire shape, bonding point position and the like, will have a serious impact on the radio frequency transmission performance. Especially in the high-frequency band such as millimeter wave, the reduction of the wire diameter will affect the transmission performance of the circuit due to the parasitic effect and skin effect of the wire. Therefore, it is urgent to extract the parasitic parameters of the wire bonding in the radio frequency circuit and optimize the transmission characteristics of the circuit.

[0003] At present, the commonly used method for extracting the parasitic parameters of the bonding wire is to establish an actual physical model of the bonding wire in three-dimensional simulation software and then simulate to obtain the parasitic parameters. However, the commonly used physical model often cannot truly reflect the morphology of the bonding wire in actual engineering applications, resulting in that the parasitic parameters cannot be accurately extracted, and establishing a three-dimensional model and simulation will take a lot of time.

[0004] The main reason for the deterioration of the transmission characteristics of the circuit caused by the circuit impedance discontinuity of the bonding wire parasitic parameters is that the bonding wire parasitic parameters mainly include the parasitic capacitance generated by the solder joint to the ground, the equivalent series resistance, the self-inductance, and when multiple bonding wires are used, the mutual inductance between the bonding wires also needs to be considered. The parasitic inductance and parasitic resistance in the equivalent circuit model play a decisive role in the deterioration of the circuit return loss (S11) and insertion loss (S21). Therefore, it is necessary to quickly estimate the deterioration of the transmission characteristics of the circuit caused by the bonding wire parasitic parameters during the circuit design stage, and to optimize the transmission characteristics of the circuit under the condition of circuit miniaturization design.

[0005] Through the above analysis, the problems and defects of the prior art are that the existing physical model often cannot truly reflect the morphology of the bonding wire in actual engineering applications, resulting in that the parasitic parameters cannot be accurately extracted, and establishing a three-dimensional model and simulation will take a lot of time. SUMMARY

[0006] In view of the problems existing in the prior art, the application provides a non-parallel wire bonding parasitic parameter extraction model and a transmission characteristic optimization method thereof.

[0007] The application is implemented in the following manner. A non-parallel bonding wire parasitic parameter extraction model and transmission characteristic optimization method comprises the following steps: using the non-parallel bonding wire parasitic parameter extraction model to extract the parasitic parameters of the bonding wire; establishing an equivalent circuit model of the bonding wire in Advanced Design System software, and designing a microstrip single-stub matching circuit suitable for the bonding wire by using a Smith chart; after converting the microstrip single-stub matching circuit parameters into actual microstrip lines, obtaining a microstrip matching structure based on the parasitic parameter extraction model, and realizing model transmission characteristic optimization.

[0008] Further, the non-parallel bonding wire parasitic parameter extraction model and transmission characteristic optimization method comprises the following steps:

[0009] Step one: using a mathematical function to model the actual shape of the bonding wire;

[0010] Step two: extracting the parasitic parameters of the non-parallel double bonding wire through the parasitic parameter extraction model;

[0011] Step three: using the parasitic parameters extracted by the model to establish an equivalent circuit model in Advanced Design System, and designing a matching circuit through a Smith chart;

[0012] Step four: after converting the matching circuit parameters into actual microstrip lines, designing a microstrip matching structure based on the parasitic parameter extraction model, and realizing transmission characteristic optimization.

[0013] Further, in step one, the actual shape of the bonding wire in engineering applications is reflected in the form of double bonding wires, a mathematical function is used to describe the bonding wire trajectory, and the bonding wire trajectory function expression is:

[0014]

[0015] wherein H is the arch height, d is the bonding wire span, and θ is the included angle between the bonding wire and the x-axis.

[0016] Using a and b to represent the two ends of the bonding wire, let:

[0017]

[0018] Then the bonding wire length L is expressed as:

[0019]

[0020] Further, in step two, after analyzing the skin effect, the equivalent series resistance is expressed as:

[0021]

[0022] Wherein, p is the bonding wire resistance coefficient, D is the bonding wire diameter, d s is the skin depth.

[0023] The equivalent parallel capacitance is expressed as:

[0024]

[0025] Wherein, ε r and ε0 are the relative dielectric constant of the bonding wire and the vacuum relative dielectric constant, respectively, A is the bonding wire pad area, h s is the dielectric substrate thickness.

[0026] The self-inductance of the bonding wire is obtained by using the concept of partial inductance:

[0027]

[0028] Wherein, u0 is the vacuum permeability, g is the center point trajectory of the bonding wire conductor, x is the x-axis coordinate corresponding to g, g' represents the outer surface trajectory of the conductor, x' is the x-axis coordinate corresponding to g', r is the radius of the bonding wire, and the conductor surface impedance

[0029]

[0030] The mutual inductance of the bonding wire is expressed as:

[0031]

[0032] Wherein, g" is the center point trajectory of another bonding wire conductor, x" is the x-axis coordinate corresponding to g", p is the near-end spacing of the bonding wire, and x1 is the x-axis coordinate of the near end of the bonding wire.

[0033] Further, in step three, the parasitic parameters extracted by the model are used to establish an equivalent circuit model in Advanced Design System, and a matching circuit is designed through a Smith chart,

[0034] Further, in step four, a single-stub matching is selected, the matching circuit parameters are converted into actual microstrip structures, the impedance matching is realized by changing the form of the microstrip line structure based on the original circuit, and the circuit transmission characteristics are optimized.

[0035] Another object of the present application is to provide a non-parallel bonding wire parasitic parameter extraction model constructed by implementing the non-parallel bonding wire parasitic parameter extraction model and the transmission characteristic optimization method.

[0036] Another object of the present application is to provide a non-parallel bonding wire parasitic parameter extraction model transmission characteristic optimization system applying the non-parallel bonding wire parasitic parameter extraction model transmission characteristic optimization method, which comprises:

[0037] The parasitic parameter extraction model construction module is configured to model the actual shape of the bonding wire using a mathematical function to construct a non-parallel bonding wire parasitic parameter extraction model.

[0038] The parasitic parameter extraction module is configured to extract the parasitic parameters of the non-parallel double bonding wire through the parasitic parameter extraction model.

[0039] The matching circuit design module is configured to use the parasitic parameters extracted by the model to establish an equivalent circuit model in Advanced Design System and design a matching circuit through a Smith chart.

[0040] The transmission characteristic optimization module is configured to convert the matching circuit parameters into actual microstrip lines, design a microstrip matching structure based on the parasitic parameter extraction model, and realize transmission characteristic optimization.

[0041] Another object of the present application is to provide a computer device comprising a memory and a processor, the memory storing a computer program, the computer program being executed by the processor to cause the processor to perform the steps of the non-parallel bonding wire parasitic parameter extraction model transmission characteristic optimization method.

[0042] Another object of the present application is to provide a computer readable storage medium storing a computer program, the computer program being executed by the processor to cause the processor to perform the steps of the non-parallel bonding wire parasitic parameter extraction model transmission characteristic optimization method.

[0043] Another object of the present application is to provide an information data processing terminal for realizing the non-parallel bonding wire parasitic parameter extraction model transmission characteristic optimization system.

[0044] In combination with the above technical solutions and the technical problems solved, the technical solutions to be protected by the present application have the following advantages and positive effects:

[0045] First, in view of the technical problems existing in the prior art and the difficulty in solving the problems, the technical solutions to be protected by the present application are closely combined with the results and data obtained during the research and development process, and the technical problems solved by the technical solutions are analyzed in detail and deeply. Some creative technical effects brought about after solving the problems are described as follows:

[0046] The non-parallel bonding wire parasitic parameter extraction model provided by the application can quickly and accurately extract the parasitic inductance, parasitic capacitance and parasitic resistance of the bonding wire based on the actual shape of the bonding wire, and a method for optimizing the transmission characteristics of the bonding wire is provided based on the model.

[0047] Compared with the traditional bonding wire parasitic parameter extraction and transmission characteristic optimization method, the non-parallel bonding wire parasitic parameter extraction model and the transmission characteristic optimization method provided by the application consider the influence of the shape parameters of the bonding wire on the parasitic parameters, so that the extracted parasitic parameters are more in line with the actual situation, and the extraction model is suitable for the extraction of bonding wire parasitic parameters in any situation, and the tedious and time-consuming modeling simulation is replaced by numerical calculation, thereby saving a large amount of time. The application combines the extracted parasitic parameters with the transmission characteristic optimization method, and designs a small-size matching structure, which greatly optimizes the circuit transmission characteristics.

[0048] Secondly, from the perspective of the product or as a whole, the technical effects and advantages of the technical solution to be protected by the application are described as follows:

[0049] The parasitic parameter extraction model provided by the application can quickly extract various parasitic parameters of the bonding wire in the circuit design stage without relying on 3D modeling simulation, and can optimize the circuit design to reduce the deterioration of the transmission characteristics of the bonding wire without increasing the size of the circuit, thereby providing a reference for the optimization design of the circuit performance and saving the time of traditional 3D modeling simulation and circuit iteration.

[0050] Thirdly, the inventiveness of the claims of the application is also embodied in the following important aspects:

[0051] (1) The expected income and commercial value of the technical solution of the application after transformation are as follows:

[0052] The technical scheme of the present application can be transformed to extract the parasitic parameters according to the specific use frequency band of the microwave product and the specific processing conditions of the bonding wire, and design the optimal impedance matching circuit according to the parasitic parameters, so as to reduce the insertion loss and return loss of the radio frequency circuit to the maximum extent. For the parasitic parameters and impedance mismatching problem introduced by the bonding wire, the traditional solution generally selects 3D modeling simulation or optimization according to the measured data, and these solutions have the problems of inaccurate modeling or additional cost increase. The technical scheme of the present application can be transformed to extract the parasitic parameters and design the impedance matching circuit without relying on 3D modeling, solve the problem of inaccurate modeling, avoid the process of optimization iteration from the measured data, save the circuit development time and product iteration cost.

[0053] (2) Whether the technical scheme of the present application overcomes the technical bias:

[0054] For the parasitic parameters and impedance mismatching problem introduced by the bonding wire, the traditional solution generally selects 3D modeling simulation or optimization iteration, and the technical scheme of the present application extracts the parasitic parameters by means of the parasitic parameter extraction model in combination with the use frequency band of the microwave product and the processing parameters of the bonding wire in the circuit design stage, and designs the impedance matching circuit, thereby saving the modeling simulation and iteration optimization time. BRIEF DESCRIPTION OF DRAWINGS

[0055] In order to more clearly illustrate the technical scheme of the embodiments of the present application, the drawings needed to be used in the embodiments of the present application will be briefly introduced as follows. Obviously, the drawings described below are only some embodiments of the present application, and other drawings can also be obtained according to these drawings without creative labor for those skilled in the art.

[0056] Figure 1 is a flow chart of the non-parallel bonding wire parasitic parameter extraction model transmission characteristic optimization method provided by the embodiments of the present application;

[0057] Figure 2 is a schematic diagram of the equivalent circuit model of the bonding wire provided by the embodiments of the present application;

[0058] Figure 3 is a side view of the bonding wire parasitic parameter extraction model provided by the embodiments of the present application;

[0059] Figure 4 is a top view of the bonding wire parasitic parameter extraction model provided by the embodiments of the present application;

[0060] Figure 5 is a circuit simulation block diagram of the matching structure provided by the embodiments of the present application;

[0061] Figure 6The microstrip matching structure diagram designed based on the parasitic parameter extraction model is provided by the embodiment of the present application.

[0062] Figure 7 The return loss curve diagram when there is no matching structure is provided by the embodiment of the present application.

[0063] Figure 8 The insertion loss curve diagram when there is no matching structure is provided by the embodiment of the present application.

[0064] Figure 9 The return loss curve diagram when there is matching structure is provided by the embodiment of the present application.

[0065] Figure 10 The insertion loss curve diagram when there is matching structure is provided by the embodiment of the present application. DETAILED DESCRIPTION

[0066] In order to make the purpose, technical scheme and advantages of the present application clearer, the present application is further described in detail below in combination with embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and do not limit the present application.

[0067] In view of the problems in the prior art, the present application provides a non-parallel bonding wire parasitic parameter extraction model and a transmission characteristic optimization method thereof, which are described in detail below in combination with the drawings.

[0068] In order to enable those skilled in the art to fully understand how the present application is specifically implemented, this part is an explanatory embodiment for explaining and describing the technical scheme of the claims.

[0069] As shown in Figure 1 The non-parallel bonding wire parasitic parameter extraction model transmission characteristic optimization method provided by the embodiment of the present application includes the following steps:

[0070] S101, extracting the parasitic parameters of the bonding wire by using the non-parallel bonding wire parasitic parameter extraction model;

[0071] S102, establishing an equivalent circuit model of the bonding wire in the Advanced Design System software, and designing a microstrip single-stub matching circuit suitable for the bonding wire by using a Smith chart;

[0072] S103, after converting the microstrip single-stub matching circuit parameters into actual microstrip lines, designing a microstrip matching structure based on the parasitic parameter extraction model to realize the model transmission characteristic optimization.

[0073] As a preferred embodiment, the non-parallel bonding wire parasitic parameter extraction model transmission characteristic optimization method provided by the embodiment of the application specifically comprises the following steps: first, a mathematical function is used to model the actual shape of the bonding wire; in actual engineering application, a double bonding wire form is usually used to improve the circuit transmission characteristic, and the shape is as shown in Figure 3 、 Figure 4 The shape can reflect the actual shape of the bonding wire in engineering application, a mathematical function is used to describe the bonding wire track, and the bonding wire track function expression is as follows: Wherein H is the arch height, d is the bonding wire span, and θ is the included angle between the bonding wire and the x axis. a and b are used to represent the two ends of the bonding wire, and the following equation is established: Then the bonding wire length L can be expressed as: After considering the skin effect, the equivalent series resistance is Wherein ρ is the bonding wire resistance coefficient, d s is the skin depth, and D is the bonding wire diameter. The equivalent parallel capacitance is Wherein ε r and ε0 are the relative dielectric constant of the bonding wire and the vacuum relative dielectric constant respectively, A is the bonding wire pad area, and h s is the dielectric substrate thickness. The bonding wire self-inductance can be obtained by using the concept of partial inductance: Wherein u0 is the vacuum permeability, g is the bonding wire conductor center point track, x is the x axis coordinate corresponding to g, g' represents the conductor outer surface track, x' is the x axis coordinate corresponding to g', r is the bonding wire radius, and the conductor surface impedance is The bonding wire mutual inductance is Wherein g'' is the other bonding wire conductor center point track, x'' is the x axis coordinate corresponding to g'', p is the bonding wire near-end spacing, and x1 is the x axis coordinate of the bonding wire near end. The parasitic parameters of the non-parallel double bonding wire can be extracted through the parasitic parameter extraction model.

[0074] The parasitic parameters extracted by the model are used to establish an equivalent circuit model in the Advanced Design System, and a matching circuit is designed through the Smith chart. Considering the miniaturization of the circuit and without increasing the complexity of the circuit, the single-stub matching is selected in the application, the impedance matching is realized by changing the microstrip line structure form on the basis of the original circuit, and the circuit transmission characteristic is optimized.

[0075] Compared with the traditional wire parasitic parameter extraction and transmission characteristic optimization method, the non-parallel wire parasitic parameter extraction model and the transmission characteristic optimization method provided by the embodiment of the application considers the influence of the wire shape parameter on the parasitic parameter, so that the extracted parasitic parameter is more in line with the actual situation; and the extraction model is applicable to the parasitic parameter extraction of the wire in any case, and the numerical calculation is used instead of the complicated and time-consuming modeling simulation, thereby saving a large amount of time. The extracted parasitic parameter is combined with the transmission characteristic optimization method, and a small-size matching structure is designed, so that the circuit transmission characteristic is greatly optimized.

[0076] The non-parallel wire parasitic parameter extraction model transmission characteristic optimization system provided by the embodiment of the application comprises:

[0077] The parasitic parameter extraction model construction module is used for modeling the actual shape of the wire by using a mathematical function, and constructing the non-parallel wire parasitic parameter extraction model.

[0078] The parasitic parameter extraction module is used for extracting the parasitic parameter of the non-parallel double wire through the parasitic parameter extraction model.

[0079] The matching circuit design module uses the parasitic parameter extracted by the model to establish an equivalent circuit model in the Advanced Design System, and designs a matching circuit through a Smith chart.

[0080] The transmission characteristic optimization module is used for converting the matching circuit parameters into actual microstrip lines, designing a microstrip matching structure based on the parasitic parameter extraction model, and realizing transmission characteristic optimization.

[0081] In order to prove the creativity and technical value of the technical scheme of the application, this part is an application embodiment of the technical scheme of the claim in a specific product or related technology.

[0082] The application provides a fast and effective non-parallel wire parasitic parameter extraction model and a transmission characteristic optimization method, extracts the parasitic parameter without 3D modeling simulation, and the parameter is adjustable to adapt to the parasitic parameter extraction under different conditions, and the design of a suitable microstrip impedance matching structure for the parasitic parameter in the circuit design stage can greatly optimize the transmission characteristic of the wire in the high frequency band. In addition, the parasitic parameter extraction model transmission characteristic optimization method of the application designs a microstrip matching structure based on the parasitic parameter extraction model, after the matching structure is added, the circuit return loss and insertion loss are obviously improved, the product iteration time is shortened, and the production cost is saved.

[0083] The embodiment of the present application has achieved some positive effects in research and development or use, and has great advantages compared with the prior art, which is described below in combination with data, charts and the like in the test process.

[0084] The non-parallel wire bonding line parasitic parameter extraction model transmission characteristic optimization method provided by the embodiment of the present application firstly extracts the parasitic parameters of the wire bonding line by using the non-parallel wire bonding line parasitic parameter extraction model, and then establishes an equivalent circuit as shown in Figure 2 The matching circuit parameters are converted into actual microstrip lines to obtain a matching structure as shown in Figure 5 . Figure 6 . .

[0085] The wire bonding line in the example has a span of 120 μm, a span distance of 300 μm, and a pitch of 100 μm. In the case of a signal frequency of 30 GHz, the parasitic capacitance is 30 fF, the parasitic resistance is 0.0478 Ω, the self-inductance is 0.189 nH, the mutual inductance is 0.03 nH, and the total parasitic inductance is 0.219 nH after the non-parallel wire bonding line parasitic parameter extraction model is used. The total length of the matching structure designed by using the extracted parasitic parameters is 0.9 mm.

[0086] The simulation return loss curve of the wire bonding line without the matching structure is as shown in Figure 7 The simulation insertion loss curve is as shown in Figure 8 When the signal frequency is higher than 20 GHz without the matching structure, the return loss of the wire bonding line is greater than -15 dB, and the insertion loss is greater than 0.15 dB. When the signal frequency reaches 40 GHz, the return loss of a single group of wire bonding lines reaches -12.1 dB, and the insertion loss reaches 0.28 dB.

[0087] The simulation return loss curve of the wire bonding line after using the matching structure is as shown in Figure 9 The simulation insertion loss curve is as shown in Figure 10 After using the matching structure, the return loss of the wire bonding line is better than -14.5 dB in the frequency range of 0-40 GHz, and especially in the frequency range of 20-40 GHz, the return loss and the insertion loss of the wire bonding line are both well optimized. When the signal frequency reaches 40 GHz, the return loss is optimized by 9 dB, and the insertion loss is optimized by 0.18 dB.

[0088] It should be noted that embodiments of the present application can be realized by hardware, software, or a combination of software and hardware. The hardware portion can be realized by a special logic; the software portion can be stored in a memory and executed by a proper instruction execution system, such as a microprocessor or a specially designed hardware. A person of ordinary skill in the art can understand that the above-mentioned apparatus and method can be realized by computer executable instructions and / or included in processor control codes, such as a carrier medium, such as a magnetic disk, CD or DVD-ROM, a programmable memory, such as a read-only memory (firmware), or a data carrier, such as an optical or electronic signal carrier. The apparatus of the present application and its modules can be realized by a hardware circuit, such as a very large scale integrated circuit or a gate array, a semiconductor, such as a logic chip, a transistor, or a programmable hardware device, such as a field programmable gate array, a programmable logic device, or the like, by software executed by various types of processors, or by a combination of the above-mentioned hardware circuit and software, such as firmware.

[0089] The above description is merely a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any modification, equivalent replacement, and improvement within the technical range disclosed by the present application, and within the spirit and principle of the present application, should be covered within the protection scope of the present application.

Claims

1. A non-parallel bonded wire parasitic parameter extraction model transmission characteristic optimization method, characterized in that, The non-parallel wire parasitic parameter extraction model transmission characteristic optimization method comprises the following steps: The non-parallel wire parasitic parameter extraction model transmission characteristic optimization method comprises the following steps: Step one, using a mathematical function to model the actual shape of the wire; Step two, extracting the parasitic parameters of the non-parallel double wire through the parasitic parameter extraction model; Step three, using the parasitic parameters extracted by the model to establish an equivalent circuit model in Advanced Design System, and designing a matching circuit through a Smith chart; Step four, after converting the matching circuit parameters into actual microstrip lines, designing a microstrip matching structure based on the parasitic parameter extraction model to optimize the transmission characteristics; In step one, the actual shape of the wire in engineering applications is reflected in the form of a double wire, and a mathematical function is used to describe the wire trajectory, and the wire trajectory function expression is: ； Where H is the arch height, d is the wire span, and θ is the angle between the wire and the x-axis; Using a, b to represent the two ends of the wire, and letting: ； The length of the wire L is represented as: ； After analyzing the skin effect, the equivalent series resistance is represented as: ； wherein is the bond wire resistance coefficient, is the skin depth; The equivalent parallel resistance is represented as: ； wherein, and are the relative dielectric constant of the wire and the relative dielectric constant of vacuum, respectively, and A is the wire bond pad area.

2. The non-parallel bondwire parasitic parameter extraction model transmission characteristic optimization method of claim 1, wherein, The self-inductance of the wire is obtained using the concept of partial inductance: ； wherein, is the vacuum permeability, g is the center point trajectory of the wirebonds conductor, x is the x-axis coordinate corresponding to g, g' represents the outer surface trajectory of the conductor, x' is the x-axis coordinate corresponding to g', r is the wirebond radius, the conductor surface impedance ; The mutual inductance of the wire is represented as: ； wherein g" is another bonding wire conductor center point trajectory, x" is the x-axis coordinate corresponding to g", and p is the bonding wire proximal end spacing, is the bonding wire proximal end x-axis coordinate.

3. The non-parallel bondwire parasitic parameter extraction model transmission characteristic optimization method of claim 1, wherein, In step three, a single-stub matching is selected, and the impedance matching is realized by changing the form of the microstrip line structure based on the original circuit to optimize the circuit transmission characteristics.

4. A non-parallel wire parasitic parameter extraction model transmission characteristic optimization method constructed according to any one of claims 1-3.

5. A non-parallel wire bonding parasitic parameter extraction model transmission characteristic optimization system applying the non-parallel wire bonding parasitic parameter extraction model transmission characteristic optimization method of any one of claims 1-3, characterized in that, The non-parallel wire parasitic parameter extraction model transmission characteristic optimization system comprises: A parasitic parameter extraction model construction module for modeling the actual shape of the wire using a mathematical function to construct a non-parallel wire parasitic parameter extraction model; A parasitic parameter extraction module for extracting the parasitic parameters of the non-parallel double wire through the parasitic parameter extraction model; A matching circuit design module for using the parasitic parameters extracted by the model to establish an equivalent circuit model in Advanced Design System and designing a matching circuit through a Smith chart; A transmission characteristic optimization module for converting the matching circuit parameters into actual microstrip lines, designing a microstrip matching structure based on the parasitic parameter extraction model, and optimizing the transmission characteristics.

6. A computer device, comprising: The computer device comprises a memory and a processor, the memory stores a computer program, and the computer program is executed by the processor to make the processor execute the steps of the non-parallel wire parasitic parameter extraction model transmission characteristic optimization method according to any one of claims 1-3.

7. A computer readable storage medium storing a computer program, which, when executed by a processor, causes the processor to perform the steps of the non-parallel wire parasitic parameter extraction model transmission characteristic optimization method according to any one of claims 1-3.

8. An information data processing terminal, characterized by The information data processing terminal is used to implement the non-parallel wire parasitic parameter extraction model transmission characteristic optimization system according to claim 5.

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