Substrate processing apparatus

Abstract

The present application relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus performing substrate processing by high pressure and low pressure. The present application discloses a substrate processing apparatus, comprising: a process chamber (100) forming an internal space (S1); a substrate support part (200) on which a substrate (1) is placed; an inner cover part (300) forming a sealed processing space (S2) having the substrate support part (200) inside; a gas supply part (400) supplying a process gas to the processing space (S2); an inner cover driving part (600) driving up and down movement of the inner cover part (300); and a filling member (700) provided between the substrate support part (200) and an inner surface of the setting groove (130) to fill at least a part of a space between the substrate support part (200) and the inner surface of the setting groove (130).

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that performs substrate processing by means of high voltage and low voltage. Background Technology

[0002] A substrate processing apparatus is used to perform processing on substrates such as wafers, typically including etching, deposition, and heat treatment.

[0003] At this point, when a thin film is formed by deposition on a substrate, a process is required to remove impurities from the film and improve the film properties after the film is formed on the substrate.

[0004] In particular, with the advent of three-dimensional semiconductor devices, i.e. substrates with high aspect ratios, in order to meet the stepped coverage standard, the film deposition temperature is lowered or gases with high impurity content are necessarily used, thus making impurity removal more difficult.

[0005] Therefore, a substrate processing method and a substrate processing apparatus for performing the method are required, in which, after a film is formed on a substrate, the film properties can be improved by removing impurities present in the film without deterioration of the film properties.

[0006] In addition to the thin film on the substrate, there is also the problem of contamination of the deposited thin film due to trace impurities remaining inside the cavity. Therefore, it is necessary to remove impurities from the cavity of the substrate support portion, including the substrate support portion.

[0007] To address this issue, existing Korean patent application No. 10-2021-0045294A discloses a substrate processing method that repeatedly generates high-pressure and low-pressure environments to reduce defects on the substrate surface and inside the cavity, thereby improving thin film properties.

[0008] However, when the above-described substrate processing method is applied to existing substrate processing apparatuses, the processing space for processing the substrate is relatively large, thus creating a problem where rapid pressure change speed cannot be achieved.

[0009] In addition, existing substrate processing devices have the problem of being unable to repeatedly perform processes with a wide pressure range, from low pressure of 0.01 Torr to high pressure of 5 Bar, within a short period of time.

[0010] In addition, existing substrate processing devices have the following problems: when performing high-pressure substrate processing, the gate valve of the sealed processing space cannot withstand the pressure, making it difficult to perform high-pressure substrate processing, and the durability of the gate valve cannot be guaranteed.

[0011] In addition, in order to repeatedly perform processes with a large pressure range in a short period of time and reduce the volume of the processing space of the processing substrate, the heat generated in the processing space is lost to the surrounding process chambers and other structures, which makes it difficult to maintain the process temperature and reduces the heating efficiency. Summary of the Invention

[0012] (The problem to be solved)

[0013] In order to solve the problems mentioned above, the object of the present invention is to provide a substrate processing apparatus that can improve the pressure switching speed over a wide pressure range.

[0014] (Solutions)

[0015] This invention is proposed to achieve the objectives of the invention as described above. The invention discloses a substrate processing apparatus, comprising: a process chamber 100, including a chamber body 110 and a top cover 140; the chamber body 110 is open at the top, has a mounting groove 130 formed at the center of its bottom surface 120, and includes a gate 111 for entering and exiting a substrate 1 on one side; the top cover 140 is attached to the upper part of the chamber body 110 to form an internal space S1; a substrate support 200 is inserted into the mounting groove 130 of the chamber body 110 and a substrate 1 is placed on it; and an inner cover 300 is movably disposed inside the inner cover. Space S1, by descending, partially adheres to the bottom surface 120 adjacent to the setting groove 130, thereby forming a sealed processing space S2 containing the substrate support portion 200; gas supply portion 400 is configured to communicate with the processing space S2 to supply process gas to the processing space S2; inner cover drive portion 600 is disposed through the top cover 140 to drive the inner cover portion 300 to move up and down; filling member 700 is disposed between the inner surface of the substrate support portion 200 and the setting groove 130 to fill at least a portion of the space between the inner surface of the substrate support portion 200 and the setting groove 130.

[0016] The filling member 700 may be formed in a shape corresponding to the space between the setting groove 130 and the substrate support 200 in order to minimize the processing space S2.

[0017] The substrate support 200 includes: a substrate support plate 210 on which the substrate 1 is placed; and a substrate support column 220 that penetrates the lower surface of the process chamber 100 and is connected to the substrate support plate 210. The filling component 700 may be disposed adjacent to the side and bottom surfaces of the substrate support plate 210.

[0018] The filling component 700 may be spaced apart from the substrate support plate 210 to surround the bottom and side surfaces of the substrate support plate 210.

[0019] The substrate support portion 200 may be spaced apart from the filling component 700.

[0020] The filling component 700 can be formed from at least one material selected from quartz, ceramic and SUS.

[0021] The filling component 700 may include: a heat insulation portion 710 for insulating heat from the processing space S2 to the outside; and a reflective portion 720 disposed on the surface of the heat insulation portion 710 to reflect heat.

[0022] The reflective portion 720 can be coated on the surface of the heat insulation portion 710.

[0023] The substrate processing apparatus includes: a plurality of substrate support pins 810, which pass through the filling member 700 and the substrate support portion 200 and move up and down to support the substrate 1; a substrate support ring 820, which is formed in annular shape and is raised and lowered by an external substrate support pin drive portion 830, and a plurality of substrate support pins 810 are provided. The process chamber 100 also includes a support pin setting groove 160, which is formed on the lower surface of the process chamber 100 to house the substrate support ring 820. The support pin setting groove 160 is formed in the setting groove 130 and can be covered by the filling member 700.

[0024] The substrate processing apparatus may include: a plurality of substrate support pins 810, which pass through the substrate support portion 200 and move up and down to support the substrate 1; a substrate support ring 820, which is formed in a ring shape and is raised and lowered by an external substrate support pin drive portion 830, and a plurality of the substrate support pins 810 are provided; the filling component 700 includes a support pin setting groove formed for setting the substrate support ring 820.

[0025] (The effect of the invention)

[0026] The substrate processing apparatus of the present invention minimizes the volume of the processing space of the processing substrate inside the chamber, thereby having the advantage of improving the pressure switching speed over a wide pressure range.

[0027] In particular, the substrate processing apparatus of the present invention has the advantage of being able to change pressure at a high pressure change rate of 1 Bar / s, from a low pressure of 0.01 Torr to a high pressure of 5 Bar.

[0028] Furthermore, the substrate processing apparatus of the present invention can perform substrate processing by means of a high-pressure process, regardless of the gate valve, by forming a sealed processing space through the lowering and close contact of the inner cover to perform substrate processing. Therefore, it has the advantage of being able to easily perform high-pressure process substrate processing regardless of the performance of the gate valve, and preventing damage to the gate valve.

[0029] Furthermore, the substrate processing apparatus of the present invention has the advantage of improving safety by preventing leakage to the outside of the apparatus when a substrate is processed by a high-pressure process and leakage occurs in the processing space, by performing suction in the internal space which is formed as a dual space.

[0030] Furthermore, the substrate processing apparatus of the present invention minimizes heat loss to the surrounding structure, including the process chamber, for the heat supplied by the heater for substrate processing, thereby having the advantage of easily reaching and maintaining the process temperature without heat loss while maintaining a minimum processing space.

[0031] In particular, the substrate processing apparatus of the present invention reflects the heat supplied from the heater back into the processing space or prevents heat loss to the surrounding structure, thereby improving the heating efficiency of the heater.

[0032] Furthermore, the substrate processing apparatus of the present invention ensures the space for setting substrate support pins for importing and exporting substrates while forming processing spaces separately, thus having the advantage of minimizing the volume of the processing space. Attached Figure Description

[0033] Figure 1 This is a cross-sectional view showing the substrate processing apparatus of the present invention.

[0034] Figure 2 It is shown Figure 1 A cross-sectional view of the formation of the processing space of the substrate processing apparatus.

[0035] Figure 3 It is shown Figure 1 An enlarged view of part A of the sealing section in the substrate processing apparatus.

[0036] Figure 4 It is shown Figure 1 A perspective view of the filling component of the substrate processing apparatus.

[0037] Figure 5 It shows the use of Figure 1 A graph showing the pressure changes generated by the process of the substrate processing device.

[0038] (Explanation of reference numerals in the attached diagram)

[0039] 1: Substrate 100: Process Chamber

[0040] 200: Substrate support portion; 300: Inner cover portion

[0041] 400: Gas Supply Department; 500: Pump Department

[0042] 600: Inner cover drive unit; 700: Filling component

[0043] 800: Substrate support pin section Detailed Implementation

[0044] The substrate processing apparatus of the present invention will now be described with reference to the accompanying drawings.

[0045] like Figure 1 As shown, the substrate processing apparatus of the present invention includes: a process chamber 100, comprising a chamber body 110 and a top cover 140, wherein the upper part of the chamber body 110 is open and a mounting groove 130 is formed on the center side of the bottom surface 120, and a gate 111 for entering and exiting the substrate 1 is included on one side; the top cover 140 is attached to the upper part of the chamber body 110 to form an internal space S1; a substrate support 200 is inserted into the mounting groove 130 of the chamber body 110 and a substrate 1 is placed on it; and an inner cover 300 is movably disposed in the internal space S1, wherein a portion of the inner cover 300 is lowered to allow entry and exit of the substrate 1. The bottom surface 120, which is adjacent to the setting groove 130, forms a sealed processing space S2 containing the substrate support portion 200; a gas supply portion 400 is configured to communicate with the processing space S2 to supply process gas to the processing space S2; an inner cover driving portion 600 is disposed through the top cover 140 to drive the inner cover portion 300 to move up and down; a filling member 700 is disposed between the inner surface of the substrate support portion 200 and the setting groove 130 to fill at least a portion of the space between the inner surface of the substrate support portion 200 and the setting groove 130.

[0046] In addition, the substrate processing apparatus of the present invention may also include a substrate support pin 800, which supports the substrate 1 introduced and exported in the process chamber 100 and is mounted on the substrate support 200.

[0047] In addition, the substrate processing apparatus of the present invention may also include a pump unit 500, which is disposed in the process chamber 100 at a position close to the inner cover 300 to draw in gas leaking from the sealing part 900.

[0048] Here, substrate 1, which is the object of processing, can be understood to include all substrates, such as substrates used in display devices such as LCD, LED, and OLED, semiconductor substrates, solar cell substrates, and glass substrates.

[0049] The process chamber 100, which forms an internal space S1, can adopt various structures.

[0050] For example, the process chamber 100 may include a chamber body 110 and a top cover 140, the upper part of the chamber body 110 being open, and the top cover 140 covering the open upper part of the chamber body 110 to form a sealed internal space S1 together with the chamber body 110.

[0051] Additionally, the process chamber 100 may include a bottom surface 120 and a mounting groove 130. The bottom surface forms the bottom of the internal space S1, and the mounting groove 130 allows the substrate support portion 200 to be disposed on the bottom surface 120.

[0052] In addition, the process chamber 100 may also include a gate valve 150, which is used to open and close a gate 111 formed on one side of the chamber body 110 to allow the substrate 1 to enter and exit.

[0053] Additionally, the process chamber 100 may also include a support pin setting groove 160, which is formed on the lower surface of the process chamber 100 to provide a substrate support ring 820 in the substrate support portion 200 described later.

[0054] The main body 110 of the chamber is open at the top and can form a sealed internal space S1 together with the top cover 140 described later.

[0055] At this time, the chamber body 110 can be made of a metal material containing aluminum, or, as another example, of a quartz material, and can have a rectangular hexahedral shape, similar to the previously disclosed chambers.

[0056] The top cover 140 may be a structure that is attached to the upper side of the upper open chamber body 110 to form a sealed internal space S1 together with the chamber body 110.

[0057] At this time, the top cover 140 corresponds to the shape of the chamber body 110, and can be formed into a right-angled quadrilateral shape on a plane, and can be made of the same material as the chamber body 110.

[0058] In addition, the top cover 140 may have multiple through holes to pass through the inner cover drive part 600 described later, and the bottom surface is connected to the end of the bellows 630 described later, which can prevent various gases and foreign objects from leaking to the outside.

[0059] On the other hand, the top cover 140 structure can of course be omitted, and the chamber body 110 can be formed as an integral type that forms an internal space S1 inside.

[0060] The process chamber 100 may include a bottom surface 120 and a mounting groove 130. The lower inner surface of the bottom surface 120 forms the bottom of the internal space S1, and the mounting groove 130 is configured to allow the substrate support portion 200, described later, to be disposed on the bottom surface 120.

[0061] More specifically, such as Figure 1 As shown, a mounting groove 130 can be formed on the center side of the lower surface of the process chamber 100. The mounting groove 130 forms a step corresponding to the substrate support portion 200 described later. A bottom surface 120 can be formed at the edge of the mounting groove 130.

[0062] That is, a mounting groove 130 for mounting a substrate support 200 is formed on the lower inner surface of the process chamber 100. The mounting groove 130 forms a step, and the rest is defined as the bottom surface 120, which can be formed at a height higher than the mounting groove 130.

[0063] The gate valve 150, as a structure for opening and closing a gate 111 formed on one side of the chamber body 110 to allow the substrate 1 to enter and exit, can adopt various structures.

[0064] At this time, the gate valve 150 is in close contact with or unclosed to the chamber body 110 by up-down driving and forward-backward driving, thereby closing or opening the gate 111. As another example, the gate 111 can be closed or opened by a single drive in the diagonal direction. In this process, various previously disclosed driving methods can be applied, such as cylinder, cam, electromagnetic, etc.

[0065] The support pin setting groove 160 is used to set the substrate support pin part 800 to support the substrate 1 to be placed on the substrate support part 200 or to support the substrate 1 at intervals from the substrate support part 200 upwards, thereby enabling the substrate 1 to be introduced and exported. Various structures can be adopted.

[0066] For example, the support pin setting groove 160 corresponds to a groove that can be formed as an annular groove on the plane of the substrate support ring 820, so as to set the substrate support ring 820 described later.

[0067] At this time, the support pin setting groove 160 can be set on the lower surface of the process chamber 100 corresponding to the position of the substrate support ring 820, or more specifically, it can be formed in the setting groove 130.

[0068] That is, the support pin setting groove 160 can be formed in the setting groove 130 that forms a step from the bottom surface 120, and can have a predetermined depth so that it can move up and down when the substrate support ring 820 is set.

[0069] Therefore, the support pin setting groove 160 is provided with a substrate support ring 820, and multiple substrate support pins 810 can be provided, which pass through the filling member 700 and the substrate support plate 210 on the upper side.

[0070] On the other hand, the support pin setting groove 160 is formed in the setting groove 130 and has a predetermined volume, which causes an increase in the volume of the processing space S2 formed by the inner cover portion 300 described later.

[0071] To improve this problem, the filling component 700 is provided in the setting groove 130 while covering the support pin setting groove 160, thereby isolating the processing space S2 from the space formed by the support pin setting groove 160, thereby minimizing the volume of the processing space S2.

[0072] More specifically, when the support pin setting groove 160 is removed, a separate space is needed in the lower part of the substrate support plate 210 for the substrate support pin 810 and substrate support ring 820, which will be described later. This can cause an increase in dead volume. In order to eliminate the dead volume, the support pin setting groove 160 can be formed so that the substrate support pin 810 and substrate support ring 820 can be inserted into the support pin setting groove 160 when they descend.

[0073] On the other hand, unlike this, the support pin setting groove 160 is not provided on the bottom surface 120 of the process chamber 100, but can be formed on the filling member 700 provided in the setting groove 130.

[0074] That is, the support pin setting groove 160 forms a predetermined depth on the upper surface of the filling member 700, more specifically, a depth to the extent that the substrate support ring 820 and the substrate support pin 810 can be inserted, so that the substrate 1 can be raised in order to support the substrate 1 in the state of being inserted into the filling member 700.

[0075] On the other hand, at this time, the substrate support pin 810 can pass through the filling member 700.

[0076] The substrate support 200 is a structure provided in the process chamber 100 and on which the substrate 1 is placed, and various structures can be adopted.

[0077] That is, the substrate 1 is placed on the substrate support portion 200 to support the substrate 1 being processed, and the substrate 1 can be fixed during the substrate processing.

[0078] In addition, the substrate support 200 has a heater inside, which can create a temperature environment for the processing space S2 for substrate processing.

[0079] For example, the substrate support 200 may include: a substrate support plate 210 on which the substrate 1 is placed and is formed in a circular shape in a plane; and a substrate support column 220 that penetrates the lower surface of the process chamber 100 to be connected to the substrate support plate 210.

[0080] Additionally, the substrate support portion 200 may include a heater disposed within the substrate support plate 210 to heat the substrate 1 placed on the substrate support plate 210.

[0081] The substrate support plate 210, which serves as the structure on which the substrate 1 is placed, can be a plate structure that is formed into a circle on a plane corresponding to the shape of the substrate 1.

[0082] At this time, a heater is arranged inside the substrate support plate 210, which can create a process temperature for substrate processing in the processing space S2. The process temperature can be about 400°C to 550°C.

[0083] The substrate support column 220 serves as a structure connecting the lower surface of the through-process chamber 100 to the substrate support plate 210, and various structures can be adopted.

[0084] The substrate support column 220 passes through the lower surface of the process chamber 100 and can be combined with the substrate support plate 210, and various wires for supplying power to the heater can be arranged inside it.

[0085] On the other hand, such as Figure 5 As shown, the substrate processing apparatus of the present invention is an apparatus for performing substrate processing that repeatedly changes and creates a pressure environment of high pressure and low pressure in a short period of time. More specifically, it is necessary to repeatedly change the pressure range from 5 Bar to 0.01 Torr at a pressure change rate of 1 Bar / s.

[0086] However, considering the large volume of the internal space S1 of the chamber body 110, the pressure change speed described above cannot be achieved. Therefore, it is necessary to minimize the volume of the processing space S2 used for substrate processing.

[0087] Therefore, the substrate processing apparatus of the present invention includes an inner cover portion 300, which is movably disposed in the internal space S1 and is lowered to fit tightly against the process chamber 100 to form a sealed processing space S2 in which the substrate support portion 200 is located.

[0088] The inner cover 300 may be movably disposed in the internal space S1 and, by lowering a portion therein, closely adhere to the process chamber 100 to form a sealed processing space S2 containing the substrate support 200.

[0089] That is, the inner cover 300 is configured to move up and down on the upper side of the substrate support 200 in the internal space S1, and to be in close contact with at least a portion of the internal surface of the process chamber 100 by descending, thereby sealing the processing space S2 between the inner cover 300 and the lower inner surface of the process chamber 100 as needed.

[0090] Accordingly, the substrate support 200 can be located within the processing space S2, and substrate processing can be performed on the substrate 1 placed in the substrate support 200 within the processing space S2 with minimized volume.

[0091] As an example, the inner cover 300 is pressed against the bottom surface 120 by a descending edge, thereby forming a sealed processing space S2 between the bottom surface of the inner cover 300 and the inner lower surface of the process chamber 100.

[0092] On the other hand, as another example, the inner cover 300 is in close contact with the inner side of the process chamber 100 by its descending edge, thereby naturally forming a sealed processing space S2.

[0093] The inner cover 300 forms a sealed processing space S2 by closely abutting the bottom surface 120 with its descending edge, and the substrate support 200 provided in the setting groove 130 can be located within the processing space S2.

[0094] That is, such as Figure 2 As shown, the inner cover 300 is closely attached to the bottom surface 120, which forms a step with the setting groove 130 and is located at a high position, through the descending edge, thereby forming a sealed processing space S2 between the bottom surface of the inner cover 300 and the setting groove 130.

[0095] At this time, a substrate support 200 is provided in the setting slot 130, and more specifically, a substrate support plate 210 and a filling member 700 are provided, thereby minimizing the volume of the processing space S2 and allowing the substrate 1, which is to be processed, to be placed on it.

[0096] In order to minimize the volume of the processing space S2 in this process, the groove 130 can be formed in a shape corresponding to the substrate support 200 of the processing space S2. More specifically, corresponding to the circular substrate support plate 210, it can be formed in a groove with a cylindrical shape.

[0097] That is, in order to minimize the remaining space in the setting space formed by the setting groove 130, except for the space for the setting substrate support plate 210 and the filling member 700, the setting groove 130 can be formed into a shape corresponding to the shape of the substrate support plate 210.

[0098] To prevent interference between the substrate 1 placed on the substrate support plate 210 and the inner cover 300 during the process, the height of the bottom surface 120 may be higher than the substrate 1 placed on the substrate support plate 200.

[0099] On the other hand, the greater the distance between the substrate 1 placed in the substrate support 200 and the bottom surface of the inner cover 300, the larger the volume of the processing space S2 will be. Therefore, the height of the bottom surface 120 can be set to minimize the distance between the substrate 1 and the inner cover 300 while preventing interference between them.

[0100] The inner cover 300 can be a structure that moves up and down via the inner cover drive 600, and various structures can be adopted.

[0101] The inner cover 300 can be a structure that moves up and down within the internal space S1 via the inner cover drive 600.

[0102] At this time, the inner cover 300 can be formed on the plane to cover the setting groove 130 and the edge corresponds to a part of the bottom surface 120, and the edge of the inner cover 310 is in close contact with the bottom surface 120, thereby forming a sealed processing space S2 between the inner cover 310 and the setting groove 130.

[0103] On the other hand, as another example, the edge of the inner cover 300 may be close to the inner side of the process chamber 100 to form a processing space S2.

[0104] In addition, in order to effectively achieve and maintain the process temperature in the sealed processing space S2 formed by the up-and-down movement of the inner cover 300, the inner cover 300 can be formed of a material with excellent heat insulation effect, which can prevent the processing space S2 from losing temperature to the internal space S1, etc.

[0105] The sealing part 900 is a structure disposed on at least one of the bottom surface 120 of the inner cover part 300 or the process chamber 100, and can be disposed in a position corresponding to the bottom surface 120 of the process chamber 100 being in close contact with the inner cover part 300.

[0106] That is, when the edge of the inner cover 300 contacts the bottom surface 120 to form a sealed processing space S2, the sealing part 900 is arranged along the edge in the bottom surface of the inner cover 300 and can contact the area between the edge of the inner cover 300 and the bottom surface 120.

[0107] Thus, the sealing part 900 can guide the formation of a sealed processing space S2 and prevent process gases and the like from leaking from the internal space S1 and the outside.

[0108] For example, the sealing portion 900 may include: a first sealing member 910 disposed along an edge in the bottom surface of the inner cover portion 300; and a second sealing member 920 disposed at a position spaced apart from the first sealing member 910 by a predetermined distance.

[0109] At this time, the first sealing member 910 and the second sealing member 920, as O-rings of the type disclosed previously, are arranged side by side along the edge of the bottom surface of the inner cover portion 300, spaced apart by a predetermined distance.

[0110] That is, the first sealing component 910 and the second sealing component 920 perform a double seal on the processing space S2, thereby preventing process gases and the like from leaking from the processing space S2 to the outside.

[0111] On the other hand, the sealing part 900 can be inserted into the insertion groove provided on the bottom surface 120, and can be tightly attached to or separated from the inner cover part 300 as the inner cover part 300 moves up and down.

[0112] As another example, the sealing part 900 can of course also be configured on the bottom surface of the inner cover part 300.

[0113] The pump unit 500 is a structure located in the process chamber 100 in close contact with the inner cover 300 to draw in process gas leaking from the sealing part 900, and various structures can be adopted.

[0114] For example, the pump unit 500 is located at a position corresponding to the close contact position between the inner cover 300 and the process chamber 100, and penetrates the lower surface of the process chamber 100, thereby enabling suction of the sealing part 900 provided in the inner cover 300.

[0115] That is, the pump section 500 minimizes the leakage of process gas from the sealing section 900, which is a consumable, thereby minimizing corrosion and damage to the sealing section 900 exposed to the high temperature and process gas in the processing space S2, and thus improving durability.

[0116] Therefore, the pump unit 500 can draw air from the gap space S3 between the first sealing member 910 and the second sealing member 920.

[0117] For example, the pump unit 500 may include: a pump 530 configured externally to perform suction on the gap space S3; a pumping nozzle 510 disposed at a position corresponding to the first sealing member 910 and the second sealing member 920; and a pumping flow path 520 configured to pass through the lower surface of the process chamber 100, with one end connected to the pumping nozzle 510 and the other end connected to the external pump 530.

[0118] At this time, the pumping nozzle 510 may be formed in a circular shape on the plane along the sealing portion 900. As another example, it may be a structure in which a portion of a groove formed on the lower surface of the process chamber 100 is arranged along the sealing portion 900 to perform suction along the groove.

[0119] On the other hand, the pumping flow path 520 may be a separate pipe structure that passes through the lower surface of the process chamber 100. As another example, it may be formed by machining the lower surface of the process chamber 100.

[0120] On the other hand, unlike the above example of pumping process gas leaking in the sealing part 900, the pump part 500 may be a structure that supplies purging gas to the gap space S3 between the first sealing member 910 and the second sealing member 920.

[0121] The gas supply unit 400 can be configured to communicate with the processing space S2 to supply process gas to the processing space S2, and various structures can be adopted.

[0122] For example, the gas supply unit 400 may include: a gas supply nozzle 410 exposed in the processing space S2 to supply process gas into the processing space S2; and a gas supply channel 420 penetrating the process chamber 100, connected to the gas supply nozzle 410, and conveying the process gas supplied through the gas supply nozzle 410.

[0123] At this time, as Figure 2 As shown, the gas supply unit 400 can be disposed adjacent to the substrate support unit 200 at the edge of the mounting groove 130, thereby supplying process gas to the processing space S2.

[0124] On the other hand, the processing space S2 can be formed between a portion of the bottom surface of the inner cover 300 and the upper surface of the gas supply section 400 and the substrate support section 200.

[0125] The gas supply nozzle 410, as a structure exposed in the processing space S2 to supply process gas into the processing space S2, can adopt various structures.

[0126] For example, the gas supply nozzle 410 is disposed adjacent to the side of the substrate support plate 210 at the edge of the setting groove 130, and sprays process gas upward or onto the side of the substrate support plate 210, thereby supplying process gas into the processing space S2.

[0127] At this time, the gas supply nozzle 410 is disposed at the edge of the setting groove 130, surrounding the substrate support plate 210, and can spray process gas from at least a portion of the side surface of the substrate support plate 210 on the plane.

[0128] As an example, the gas supply nozzle 410 can spray process gas from the edge of the setting groove 130 toward the bottom surface of the inner cover 300, and can supply process gas in order to adjust the pressure of the processing space S2 to the desired pressure in a short time by minimizing the volume of the processing space S2.

[0129] The gas supply channel 420 passes through the lower surface of the process chamber 100, can be connected to an external process gas storage unit, and receives process gas, and can supply process gas to the gas supply nozzle 410.

[0130] At this time, the air supply channel 420 may be a pipe that passes through the lower surface of the process chamber 100. As another example, the air supply channel 420 may be formed by machining the lower surface of the process chamber 100.

[0131] The inner cover driving part 600 is provided on the upper surface of the through process chamber 100 to drive the inner cover part 300 to move up and down, and various structures can be adopted.

[0132] For example, the inner cover drive unit 600 may include: a plurality of drive rods 610, one end of which passes through the upper surface of the process chamber 100 to be coupled to the inner cover 300; and at least one drive source 620, connected to the other end of the plurality of drive rods 610, to drive the drive rods 610 in the up and down direction.

[0133] In addition, the inner cover driving part 600 may also include: a fixed support part 640, which is disposed on the upper surface of the process chamber 100, i.e., the top cover 140, to fix and support the end of the driving rod 610; and a bellows 630, which is disposed between the upper surface of the process chamber 100 and the inner cover part 300, to surround the driving rod 610.

[0134] The drive rod 610 may have one end penetrating through the upper surface of the process chamber 100 and being connected to the inner cover 300, while the other end is connected to the drive source 620 outside the process chamber 100. The drive source 620 moves the rod up and down, thereby driving the structure of the inner cover 300 up and down.

[0135] At this time, instead of forming multiple drive rods 610, two or four drive rods 610 can be formed and attached to the upper part of the inner cover 300 at predetermined intervals, thereby guiding the inner cover 300 to move up and down while maintaining a horizontal position.

[0136] The drive source 620 is a structure of the drive rod 610 that is set above and below the fixed support 640 for driving and can adopt various structures.

[0137] For the drive source 620, any structure can be applied as long as it is a previously disclosed drive method. For example, it can be applied to various drive methods such as cylinder drive, electromagnetic drive, screw motor drive, cam drive, etc.

[0138] The bellows 630 may be a structure that surrounds the drive rod 610 and is disposed between the upper surface of the process chamber 100 and the inner cover 300 to prevent gas or the like in the internal space S1 from leaking through the upper surface of the process chamber 100.

[0139] At this point, the bellows 630 can be positioned by moving the inner cover 300 up and down.

[0140] On the other hand, as described above, when the substrate support 200 is provided in the setting groove 130, a space is formed between the substrate support 200, more specifically, the substrate support plate 210 and the setting groove 130, which may be a factor that increases the volume of the processing space S2.

[0141] To improve this problem, when the board support 200 is placed in contact with the setting groove 130, the following problems exist: heat supplied by the heater present in the board support 200 is absorbed by the process chamber 100 through the lower surface of the process chamber 100, i.e., the setting groove 130, and heat loss occurs. Furthermore, it is difficult to set and maintain the process temperature in the processing space S2, which reduces efficiency.

[0142] To improve this problem, the filling member 700 of the present invention is a structure provided between the substrate support 200 and the lower surface of the process chamber 100, and can adopt various structures.

[0143] For example, the filling member 700 can be disposed in the setting groove 130. When disposed in the setting groove 130, the substrate support plate 210 is disposed on the upper side of the filling member 700, minimizing the remaining volume between the setting groove 130 and the substrate support plate 210, thereby reducing the volume of the processing space S2.

[0144] Therefore, the filling member 700 may be formed in a shape corresponding to the space between the setting groove 130 and the substrate support 200 in order to minimize the processing space S2.

[0145] More specifically, the filling member 700 may be formed in a shape corresponding to the space between the setting groove 130, which is circular in the plane and has a step with a predetermined depth from the bottom surface 120, and the substrate support plate 210, which is circular in the plane.

[0146] Therefore, such as Figure 4As shown, the filling member 700 is formed as a circular plate 730 disposed between the substrate support plate 210 and the setting groove 130, or it can be formed as a step 740 formed on the upper side of the edge of the circular plate 730 shape to occupy the space between the side of the substrate support plate 210 and the setting groove 130.

[0147] That is, the filling member 700 is configured to be adjacent to at least one of the side surface and bottom surface of the substrate support plate 210 and spaced apart from the substrate support plate 210, so as to surround the bottom surface and side surface of the substrate support plate 210.

[0148] In order to prevent heat loss through the filling member 700, the substrate support 200 may be spaced apart from the filling member 700, or more specifically, may be spaced apart to the extent that they do not contact each other.

[0149] Accordingly, a predetermined distance can be maintained between the substrate support 200 and the filling member 700, and this distance serves as an exhaust channel, thereby enabling the exhaust of the processing space S2.

[0150] More specifically, since the substrate support 200 and the filling member 700 are spaced apart to form an exhaust channel, the exhaust channel is connected to the bottom of the setting groove 130 through which the substrate support column 220 passes, and the process gas of the processing space S2 can be discharged to the outside.

[0151] On the other hand, the filling component 700 can be formed of at least one material selected from quartz, ceramic and SUS.

[0152] In addition, the filling member 700 not only occupies the space between the setting groove 130 and the substrate support 200 simply to minimize the volume of the processing space S2, but also minimizes the heat loss transmitted to the substrate 1 through the substrate support 200 by heat insulation, and further reflects the lost heat back to the processing space S2 by heat reflection.

[0153] That is, the filling component 700 can not only minimize the volume of the processing space S2, but also include heat insulation to prevent heat loss through the substrate support 200 to the bottom surface 120 side of the process chamber 100, and further improve thermal efficiency through heat reflection.

[0154] On the other hand, in order to increase the reflective effect of the heat emitted through the substrate support 200 reflected into the processing space S2, the filling member 700 may also include a reflective portion 720 disposed on the surface.

[0155] That is, the filling component 700 may include: a heat insulation part 710 for insulating heat from the processing space S2 to the outside; and a reflective part 720 disposed on the surface of the heat insulation part 710 to reflect heat.

[0156] At this time, the reflective part 720 can be coated, pasted or applied to the surface of the heat insulation part 710 to form a reflective layer, which reflects the heat lost from the processing space S2 through the process chamber 100 and can transfer heat back to the processing space S2.

[0157] In addition, the filling component 700 may also include: a first through-hole 731, which is formed at the center of the filling component 700 with a size corresponding to the substrate support post 220 in order to set the substrate support post 220; and a plurality of second through-holes 732 for multiple substrate support pins 810 to pass through and move up and down.

[0158] The substrate support pin 800 serves as a structure that supports the substrate 1, which is introduced and removed from the process chamber 100, and is placed in the substrate support 200. Various structures can be adopted.

[0159] For example, the substrate support pin portion 800 may include: a plurality of substrate support pins 810 that pass through the filling member 700 and the substrate support portion 200 and move up and down to support the substrate 1; a substrate support ring 820 that is formed in a ring shape and is provided with a plurality of substrate support pins 810; and a substrate support pin driving portion 830 that drives the plurality of substrate support pins 810 up and down.

[0160] The plurality of substrate support pins 810 can be configured in the substrate support ring 820 to move up and down through the filling member 700 and the substrate support portion 200 to support the substrate 1, and various structures can be adopted.

[0161] At this time, at least three substrate support pins 810 can be configured and are respectively arranged in the substrate support ring 820 at intervals. The substrate support pins 810 rise from the substrate support portion 200 to expose themselves to support the introduced substrate 1 or the exported substrate 1. The substrate support pins 810 descend to be located inside the substrate support portion 200, so that the substrate 1 can be placed in the substrate support portion 200.

[0162] The substrate support ring 820 can be a ring structure with multiple substrate support pins 810, which can be moved up and down simultaneously by moving up and down.

[0163] In particular, the substrate support ring 820 is provided on the lower surface of the process chamber 100, that is, in the support pin setting groove 160 formed in the setting groove 130, and can be moved up and down by the substrate support pin drive part 830.

[0164] The substrate support pin drive unit 830 is a structure provided outside the process chamber 100 to drive the substrate support ring 820 up and down, and various structures can be adopted.

[0165] For example, the substrate support pin drive unit 830 may include: a substrate support pin 831, one end of which is connected to the bottom surface of the substrate support ring 820, and the other end of which is connected to the substrate support pin drive source 833, and moves up and down by the driving force of the substrate support pin drive source 833; a substrate support pin guide 832, which guides the linear movement of the substrate support pin 831; and a substrate support pin drive source 833, which drives the substrate support pin 831.

[0166] In addition, the substrate support pin portion 800 may also include a substrate support pin bellows 840, which surrounds the substrate support pin rod 831 and is disposed between the bottom surface of the process chamber 100 and the substrate support pin drive source 833.

[0167] The above is only a partial description of the preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be limited to the embodiments. The technical ideas and fundamental technical ideas of the present invention described above are all included within the scope of the present invention.

Claims

1. A substrate processing apparatus, characterized in that, include: A process chamber (100) includes a chamber body (110) and a top cover (140). The chamber body (110) is open at the top, and a groove (130) is formed on the center side of the bottom surface (120). It also includes a gate (111) for entering and exiting the substrate (1) on one side. The top cover (140) is attached to the upper part of the chamber body (110) to form an internal space (S1). A substrate support (200) is inserted into the mounting groove (130) of the chamber body (110), and a substrate (1) is placed on it; The inner cover (300) is movably disposed in the internal space (S1). By descending, a portion of it is closely attached to the bottom surface (120) adjacent to the set groove (130), thereby forming a sealed processing space (S2) with the substrate support (200) inside. A gas supply unit (400) is configured to communicate with the processing space (S2) to supply process gas to the processing space (S2); An inner cover drive unit (600) is disposed through the top cover (140) to drive the inner cover unit (300) to move up and down; A filling member (700) is disposed between the inner surfaces of the substrate support portion (200) and the setting groove (130) to fill at least a portion of the space between the inner surfaces of the substrate support portion (200) and the setting groove (130). The filling member (700) is formed in a shape corresponding to the space between the setting groove (130) and the substrate support (200) to minimize the processing space (S2).

2. The substrate processing apparatus according to claim 1, characterized in that, The substrate support portion (200) includes: A substrate support plate (210) on which the substrate (1) is placed; a substrate support column (220) through the lower surface of the process chamber (100) and connected to the substrate support plate (210). The filling component (700) is disposed adjacent to the side and bottom surfaces of the substrate support plate (210).

3. The substrate processing apparatus according to claim 2, characterized in that, The filling member (700) is spaced apart from the substrate support plate (210) to surround the bottom and side surfaces of the substrate support plate (210).

4. The substrate processing apparatus according to claim 1, characterized in that, The substrate support (200) and the filling component (700) are spaced apart.

5. The substrate processing apparatus according to claim 1, characterized in that, The filling component (700) is formed of at least one material selected from quartz, ceramic and SUS.

6. The substrate processing apparatus according to claim 1, characterized in that, The filling component (700) includes: A heat insulation part (710) is used to insulate heat from the processing space (S2) to the outside; a reflective part (720) is disposed on the surface of the heat insulation part (710) to reflect heat.

7. The substrate processing apparatus according to claim 6, characterized in that, The reflective part (720) is coated on the surface of the heat insulation part (710).

8. The substrate processing apparatus according to claim 1, characterized in that, include: Multiple substrate support pins (810) pass through the filling member (700) and the substrate support part (200) and move up and down to support the substrate (1); the substrate support ring (820) is formed into a ring and is raised and lowered by an external substrate support pin drive part (830), and multiple substrate support pins (810) are provided. The process chamber (100) further includes a support pin mounting groove (160). The support pin setting groove (160) is formed on the lower surface of the process chamber (100) to provide the substrate support ring (820).

9. The substrate processing apparatus according to claim 8, characterized in that, The support pin setting groove (160) is formed in the setting groove (130) and is covered by the filling member (700).

10. The substrate processing apparatus according to claim 1, characterized in that, include: Multiple substrate support pins (810) pass through the substrate support portion (200) and move up and down to support the substrate (1); The substrate support ring (820) is formed in the shape of a ring and is raised and lowered by an external substrate support pin drive (830), and a plurality of said substrate support pins (810) are provided. The filling component (700) includes a support pin setting groove formed for setting the substrate support ring (820).

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