Vertical gate-all-around thin film transistor and method of manufacturing the same

Abstract

The present application relates to a kind of vertical surrounding gate thin film transistor and its preparation method, a kind of vertical surrounding gate thin film transistor, from bottom to top in turn include: substrate;Insulating layer, it is arranged on substrate;Source layer, it is arranged to insulating layer;Annular thin film channel, it is vertically arranged on source layer;Drain layer, it is arranged in the upper portion of barrel-shaped thin film channel;Vertical surrounding gate, fill the inside of annular thin film channel and cover the sidewall of the annular thin film channel.The present application uses metal side wall as sacrificial layer, play the role of protecting lower film and channel release's sacrificial layer in etching process, semiconductor side wall as channel, by etching away sacrificial layer, so that sheet or columnar semiconductor side wall channel stands between upper and lower source-drain metal, again fill gate dielectric and gate metal to realize full-enclosed gate structure, and channel is vertical direction, and the preparation process of channel also does not need epitaxy, using PVD, CVD or ALD can.

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