Stretchable display panel

Abstract

A stretchable display panel includes a stretchable film, a patterned insulating structure, a plurality of light emitting elements, a plurality of conductive lines, and a patterned hardmask layer. The stretchable film has a plurality of first openings. The patterned insulating structure includes a plurality of islands and a plurality of bridges. Adjacent islands are connected via corresponding bridges. The light emitting elements are located over the islands. The plurality of conductive lines are located in the bridges. The patterned hardmask layer covers the patterned insulating structure and has a plurality of first vias overlapping the first openings. The patterned hardmask layer has a thickness less than or equal to 1000 angstroms.

Description

Technical Field

[0001] This invention relates to a stretchable display panel. Background Technology

[0002] With the development of display technology, various display devices are constantly being innovated. To enhance the competitiveness of display devices in the market, many manufacturers are committed to developing novel display devices, among which stretchable display devices are gradually gaining attention from consumers. Stretchable display devices can have different shapes depending on different applications and environments. For example, a stretchable display device can be integrated onto a sphere to obtain a spherical display device. Summary of the Invention

[0003] This invention provides a stretchable display panel that can improve the yield of the first opening of a stretchable film.

[0004] At least one embodiment of the present invention provides a stretchable display panel, including a stretchable film, a patterned insulating structure, a plurality of light-emitting elements, a plurality of conductive lines, and a patterned hard mask layer. The stretchable film has a plurality of first openings. The patterned insulating structure includes a plurality of island portions and a plurality of bridging portions. Adjacent island portions are connected via corresponding bridging portions. The light-emitting elements are located above the island portions. The plurality of conductive lines are located in the bridging portions. The patterned hard mask layer covers the patterned insulating structure and has a plurality of first through-holes overlapping the first openings. The thickness of the patterned hard mask layer is less than or equal to 1000 angstroms.

[0005] At least one embodiment of the present invention provides a method for manufacturing a stretchable display panel, comprising the following steps: forming a patterned insulating structure on a substrate, wherein the patterned insulating structure includes a plurality of island portions and a plurality of bridging portions, and adjacent island portions are connected via corresponding bridging portions; forming a hard mask layer on the patterned insulating structure and the substrate; cleaning the surface of the hard mask layer with a photoresist remover solution; forming a patterned photoresist on the surface of the hard mask layer; using the patterned photoresist as a mask to pattern the hard mask layer, thereby forming a patterned hard mask layer; and using the patterned hard mask layer as a mask to pattern the substrate, thereby forming a stretchable film. Attached Figure Description

[0006] Figure 1A and Figure 1B This is a partial top view schematic diagram of a stretchable display panel according to an embodiment of the present invention;

[0007] Figure 2 It is along Figure 1A Schematic diagram of the cross sections of lines a-a' and b-b';

[0008] Figures 3A to 3F yes Figure 2A cross-sectional schematic diagram of a method for manufacturing a stretchable display panel;

[0009] Figure 4 This is a cross-sectional schematic diagram of a stretchable display panel according to an embodiment of the present invention.

[0010] Symbol Explanation

[0011] 10,20: Stretchable display panel

[0012] 100: Stretchable membrane

[0013] 100m:Substrate

[0014] 210: First insulating layer

[0015] 220: Second insulating layer

[0016] 230: Third insulation layer

[0017] 310: First Buffer Layer

[0018] 320: Second Buffer Layer

[0019] 330: Third Buffer Layer

[0020] 340: Fourth Buffer Layer

[0021] 410: First conductive layer

[0022] 412, 422, 432: Conductors

[0023] 420: Second conductive layer

[0024] 430: Third conductive layer

[0025] 500: Patterned hard mask layer

[0026] 500m: Hard mask layer

[0027] 610: Light-emitting element

[0028] 612: Conductive connection structure

[0029] 710: Buffer layer

[0030] 720: Gate insulation layer

[0031] 730: Interlayer dielectric layer

[0032] 800: Semiconductor layer

[0033] a-a',b-b': line

[0034] AE: Active (Active) Component

[0035] C: Carrier plate

[0036] DV: Photoresist solution

[0037] EC: Etching Agent

[0038] E1: First Direction

[0039] E2: Second Direction

[0040] HW: Horizontal width

[0041] L1, L2: Distance

[0042] O1: First opening

[0043] O2: Second opening

[0044] OP1, OP2: Openings

[0045] P: Connector pad

[0046] PIS: Patterned Insulation Structure

[0047] PL: Plasma

[0048] PR: Photoresist layer

[0049] PR': Patterned photoresist

[0050] T1, T2: Thickness

[0051] TP1: First island segment

[0052] TP2: Second island

[0053] TH1: First through hole

[0054] TH2: Second through hole

[0055] W1, W2, W3, W4: Width

[0056] WP1: First Bridging Section

[0057] WP2: Second Bridging Section Detailed Implementation

[0058] Figure 1A and Figure 1B This is a partial top view schematic diagram of a stretchable display panel according to an embodiment of the present invention, wherein... Figure 1B yes Figure 1A The state of the stretchable display panel after it has been stretched along the direction of arrow F. Figure 2 It is along Figure 1A A schematic diagram of the cross sections of lines a-a' and b-b'. Figure 1A and Figure 1BThe stretchable film 100, the patterned insulating structure PIS, and the light-emitting element LD are shown, while other components are omitted.

[0059] Please refer to Figure 1A , Figure 1B , Figure 2 A and Figure 2 B. The stretchable display panel 10 includes a stretchable film 100, a patterned insulating structure PIS, a plurality of light-emitting elements 610, a plurality of wires 412, 422, 432, and a patterned hard mask layer 500. In this embodiment, the stretchable display panel 10 also includes a pad P.

[0060] The stretchable film 100 has a plurality of first openings O1. In this embodiment, the stretchable film 100 includes a plurality of first island portions TP1 and a plurality of first bridging portions WP1. Adjacent first island portions TP1 are connected via corresponding first bridging portions WP1. The width W1 of each first bridging portion WP1 is smaller than the width W2 of each first island portion TP1. The first island portions TP1 are arranged in an array along a first direction E1 and a second direction E2. At least two ends of a portion of the first bridging portions WP1 are respectively connected to two corresponding first island portions TP1. At least two of the first island portions TP1 are separated by first openings O1. In this embodiment, each first opening O1 is surrounded by four corresponding first island portions TP1 and four corresponding first bridging portions WP1. In this embodiment, the first openings O1 of the stretchable film 100 are dumbbell-shaped, with a portion of the first openings O1 extending along the first direction E1 and another portion of the first openings O1 extending along the second direction E2. The first opening O1 extending along the first direction E1 and another first opening O1 extending along the second direction E2 are arranged alternately, thereby improving the stretchability of the stretchable display panel 10.

[0061] In some embodiments, the stretchable film 100 is made of polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polycarbonate (PC), polyether sulfone (PES), or polyarylate, or combinations thereof, or other suitable materials. In some embodiments, the stretchable film 100 is selected from materials capable of withstanding the temperatures of thin-film transistor fabrication processes. In some embodiments, the thickness T1 of the stretchable film 100 is from 1 micrometer to 10 micrometers.

[0062] The patterned insulating structure PIS is located on the stretchable film 100. In this embodiment, the patterned insulating structure PIS includes a first insulating layer 210, a second insulating layer 220, and a third insulating layer 230, and optionally includes a first buffer layer 310, a second buffer layer 320, and a third buffer layer 330.

[0063] The first insulating layer 210 is located above the stretchable film 100. In some embodiments, a first buffer layer 310 is selectively included between the first insulating layer 210 and the stretchable film 100.

[0064] The second insulating layer 220 is located above the first insulating layer 210. In some embodiments, a second buffer layer 320 is selectively included between the second insulating layer 220 and the first insulating layer 210.

[0065] The third insulating layer 230 is located above the second insulating layer 220. In some embodiments, a third buffer layer 330 is selectively included between the third insulating layer 230 and the second insulating layer 220.

[0066] In some embodiments, the patterned insulating structure (PIS) comprises organic and inorganic insulating materials, and the method for forming the patterned insulating structure (PIS) includes a photolithography process and an etching process. For example, the first insulating layer 210, the second insulating layer 220, and the third insulating layer 230 all comprise cured photoresist material, and the first buffer layer 310, the second buffer layer 320, and the third buffer layer 330 comprise inorganic material patterned by etching. In other words, the patterned insulating structure (PIS) comprises a stack of multiple cured photoresist layers and multiple inorganic layers.

[0067] In this embodiment, the patterned insulating structure PIS includes a plurality of second island portions TP2 and a plurality of second bridging portions WP2. Adjacent second island portions TP2 are connected via corresponding second bridging portions WP2. The width W3 of each second bridging portion WP2 is smaller than the width W4 of each second island portion TP2. The second island portions TP2 are arranged in an array along a first direction E1 and a second direction E2. At least two ends of a portion of the second bridging portions WP2 are respectively connected to two corresponding second island portions TP2. At least two of the second island portions TP2 are separated by second openings O2. In this embodiment, each second opening O2 is surrounded by four corresponding second island portions TP2 and four corresponding second bridging portions WP2. In this embodiment, the second openings O2 of the patterned insulating structure PIS are dumbbell-shaped, with a portion of the second openings O2 extending along the first direction E1 and another portion extending along the second direction E2. A portion of the second opening O2 extending along the first direction E1 and another portion of the second opening O2 extending along the second direction E2 are alternately arranged, thereby improving the stretchability of the stretchable display panel 10. In this embodiment, the second opening O2 of the patterned insulating structure PIS overlaps with the first opening O1 of the stretchable film 100, and the size of the second opening O2 of the patterned insulating structure PIS is larger than the size of the first opening O1 of the stretchable film 100. In other words, the area of ​​the vertical projection of the patterned insulating structure PIS is smaller than the area of ​​the vertical projection of the stretchable film 100.

[0068] In this embodiment, the first insulating layer 210, the first buffer layer 310, the second insulating layer 220, the second buffer layer 320, the third insulating layer 230, and the third buffer layer 330 of the patterned insulating structure 130 are located in the second island portion TP2, and the first insulating layer 210, the first buffer layer 310, the second insulating layer 220, the second buffer layer 320, the third insulating layer 230, and the third buffer layer 330 selectively extend into the second bridging portion WP2. In some embodiments, the first buffer layer 310, the second buffer layer 320, and the third buffer layer 330 do not extend into the second bridging portion WP2 (i.e., the second bridging portion WP2 does not include inorganic insulating material), thereby improving the problem of breakage of the second bridging portion WP2 after stretching. In other embodiments, the thickness of the second bridging portion WP2 is less than the thickness of the second island portion TP2. For example, the second island portion TP2 includes more insulating layers and / or more buffer layers than the second bridging portion WP2, but the present invention is not limited thereto.

[0069] In some embodiments, each second bridging portion WP2 is located on a corresponding one of the first bridging portions WP1, and the side of each second bridging portion WP2 is offset from the side of the corresponding one of the first bridging portions WP1. Specifically, the distance L1 between one side of the second bridging portion WP2 and the first bridging portion WP1 is greater than the distance L2 between the second bridging portion WP2 and the other side of the first bridging portion WP1. By offsetting the second bridging portion WP2 above the first bridging portion WP1, the problem of stress concentration causing breakage of wires 412, 422, and 432 in the second bridging portion WP2 can be avoided. Although in this embodiment the second bridging portion WP2 is offset above the first bridging portion WP1, the invention is not limited thereto. In other embodiments, the second bridging portion WP2 is aligned with the center of the first bridging portion WP1; in other words, the distance L1 may selectively be equal to the distance L2.

[0070] The first conductive layer 410, the second conductive layer 420, and the third conductive layer 430 are located in a patterned insulating structure (PIS). In this embodiment, the first conductive layer 410 is located above the stretchable film 100 and selectively above the first buffer layer 310. The second conductive layer 420 is located above the first insulating layer 210 and selectively above the second buffer layer 220, and the second conductive layer 420 is selectively electrically connected to the first conductive layer 410. For example, a portion of the second conductive layer 420 is electrically connected to the first conductive layer 410 through a via in the first insulating layer 210. The third conductive layer 430 is located above the second insulating layer 220 and selectively above the third buffer layer 330, and the third conductive layer 430 is selectively electrically connected to the second conductive layer 420. For example, a portion of the third conductive layer 430 is electrically connected to the second conductive layer 420 through a via in the second insulating layer 220.

[0071] In this embodiment, the first conductive layer 410, the second conductive layer 420, and the third conductive layer 430 respectively include wires 412, 422, and 432. Wires 412, 422, and 432 are located above the first bridging portion WP1 of the stretchable film 100 and within the second bridging portion WP2 of the patterned insulating structure PIS. In some embodiments, some or all of the wires 412, 422, and 432 extend from the second bridging portion WP2 of the patterned insulating structure PIS into the second island portion TP2. In other words, the wires 412, 422, and 432 extend from above the first bridging portion WP1 into the first island portion TP1.

[0072] In some embodiments, the first conductive layer 410, the second conductive layer 420, and the third conductive layer 430 are each a single-layer or multi-layer conductive structure. For example, the first conductive layer 410, the second conductive layer 420, and the third conductive layer 430 are each a stacked layer of titanium / aluminum / titanium, but the present invention is not limited thereto. The first conductive layer 410, the second conductive layer 420, and the third conductive layer 430 may include metals such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, and nickel, alloys of the above metals, or other suitable conductive materials.

[0073] A pad P is disposed on the surface of the second island portion TP2. In this embodiment, the pad P is selectively located on a portion of the third conductive layer 430. In some embodiments, the pad P comprises a conductive oxide, for example, indium tin oxide.

[0074] A patterned hard mask layer 500 covers a patterned insulating structure PIS. The hard mask layer 500 extends from the top surface of the patterned insulating structure PIS into a second opening O2 of the patterned insulating structure PIS, and covers the sidewalls of the second island portion TP2 and the second bridging portion WP2. The patterned hard mask layer 500 has a plurality of first through-holes TH1 overlapping the first opening O1 and a plurality of second through-holes TH2 overlapping the pad P. In this embodiment, the width of the first opening O1 is slightly larger than the width of the first through-holes TH1, but the invention is not limited thereto. In other embodiments, the width of the first opening O1 is equal to the width of the first through-holes TH1.

[0075] In some embodiments, the patterned hard mask layer 500 comprises a metal oxide, such as indium tin zinc oxide or indium gallium zinc oxide. In some embodiments, since the patterned hard mask layer 500 is an insulating material, even if the patterned hard mask layer 500 contacts the pads P, it will not cause the pads P to short-circuit with each other.

[0076] In some embodiments, the first via TH1 includes steeply sloping sidewalls, for example, the angle between the sloping sidewalls of the first via TH1 and the bottom surface of the patterned hard mask layer 500 is, for example, 40° to 60°. Because the first via TH1 includes steeply sloping sidewalls, damage to the sidewalls of the first via TH1 during the formation of the first opening O1 of the stretchable membrane 100 can be avoided, making the sidewalls of the first opening O1 closer to the vertical plane (i.e., the angle between the sidewalls and the bottom surface is close to 90°). In some embodiments, the thickness T2 of the patterned hard mask layer 500 is less than or equal to 1000 angstroms. In some embodiments, the horizontal width HW of the sloping sidewalls of the first via TH1 is less than 0.5 micrometers (e.g., 0.15 micrometers). Since the patterned hard mask layer 500 has the advantage of being thin, the patterned hard mask layer 500 has little impact on the overall thickness of the stretchable display panel 10. Therefore, the manufacturing process of removing the patterned hard mask layer 500 can be omitted, allowing the stretchable display panel 10 to retain the patterned hard mask layer 500.

[0077] Furthermore, in some embodiments, the surface of the patterned hard mask layer 500 may contain cracks (not shown). Generally, when stretching the stretchable display panel 10, cracks in the patterned hard mask layer 500 tend to form on the second bridging portion WP2, and the extension direction of the aforementioned cracks is usually perpendicular to the extension direction of the second bridging portion WP2, rather than extending from the second bridging portion WP2 to the second island portion TP2. In some embodiments, since the patterned hard mask layer 500 is separated from the conductive layer and the inorganic layer, cracks in the patterned hard mask layer 500 do not affect signal transmission.

[0078] The light-emitting element 610 is located above the first island portion TP1. In this embodiment, the light-emitting element 610 is located above the second island portion TP2 and is electrically connected to the pad P via a conductive connection structure 612. In some embodiments, the conductive connection structure 612 includes, for example, indium, tin, bismuth, conductive adhesive, a combination of the above materials, or other suitable materials. In some embodiments, the light-emitting element 610 is placed on the pad P using a mass transfer fabrication process. The light-emitting element 610 is electrically connected to the third conductive layer 430 via the pad P, and is further electrically connected to the third conductive layer 430, the second conductive layer 420, and / or the wires 432, 422, 412 of the first conductive layer 420 located in the second bridging portion WP2. In some embodiments, the light-emitting element 610 includes an organic light-emitting diode, a micro light-emitting diode, or other light-emitting elements. The light-emitting element 610 is electrically connected to the pad P, for example, via eutectic bonding, conductive adhesive bonding, soldering, or other similar methods. In this embodiment, a different colored light-emitting element 610 is disposed above each second island portion TP2 to form a colored pixel. For example, each second island TP2 is provided with a red display element, a green display element, and a blue display element.

[0079] Figures 3A to 3F yes Figure 2 A cross-sectional schematic diagram of the manufacturing method of the stretchable display panel 10. Please refer to [the diagram first]. Figure 3A A carrier plate C is provided. The carrier plate C may include, for example, glass or other suitable carrier plates. A substrate 100m is formed on the carrier plate C. A patterned insulating structure PIS, a first conductive layer 410, a second conductive layer 420, a third conductive layer 430, and a pad P are formed on the substrate 100m.

[0080] A hard mask layer of 500 μm is formed on the patterned insulating structure PIS and the substrate 100 μm. The hard mask layer of 500 μm completely covers the insulating structure PIS and the substrate 100 μm.

[0081] Please refer to Figure 3B The surface of the hard mask layer is cleaned with a photoresist remover solution (DV) for 500 μm. In some embodiments, the photoresist remover solution (DV) comprises a combination of monoethanolamine and dimethyl sulfoxide. For example, the photoresist remover solution (DV) comprises 70 wt% monoethanolamine and 30 wt% dimethyl sulfoxide.

[0082] Please refer to Figures 3C to 3D A patterned photoresist PR' is formed on the surface of the hard mask layer 500μm. Specifically, the photoresist layer PR is first formed on the surface of the hard mask layer 500μm, such as... Figure 3C As shown. Methods for forming the photoresist layer PR include, for example, spin coating or other suitable fabrication processes. In some embodiments, the thickness of the photoresist layer PR is 1 micrometer to 5 micrometers.

[0083] Next, the photoresist layer PR is subjected to exposure and development processes to form a patterned photoresist PR', such as... Figure 3D As shown. The patterned photoresist PR' includes openings OP1 and OP2. Openings OP1 and OP2 correspond to openings OP1 and TH2, respectively, for forming the first via TH1 and the second via TH2 (see reference). Figure 2 The position of ).

[0084] Please refer to Figure 3E A patterned hard mask layer 500 is formed by patterning a patterned photoresist PR' as a mask. The formed patterned hard mask layer 500 has a first via TH1 and a second via TH2. In some embodiments, the method of patterning the hard mask layer 500 includes wet etching with an etchant EC. In some embodiments, after forming the patterned hard mask layer 500, an optional removal fabrication process is performed to remove residual patterned photoresist PR'.

[0085] In this embodiment, the surface of the hard mask layer 500m is cleaned with a photoresist remover solution DV before the patterned photoresist PR' is formed. Therefore, the first via TH1 of the patterned hard mask layer 500 has steep sidewalls.

[0086] Please refer to Figure 3F A patterned hard mask layer 500 is used as a mask to pattern a substrate 100m to form a stretchable film 100. In this embodiment, since the first via TH1 has steep sidewalls, even if the patterned hard mask layer 500 is very thin, the sidewalls of the first via TH1 will not be damaged when patterning the substrate 100m, and the sidewalls of the first opening O1 will be closer to the vertical plane (i.e., the angle between the sidewall and the bottom surface is close to 90°).

[0087] In some embodiments, the method for patterning the substrate 100m includes dry etching. The aforementioned dry etching process is, for example, an ashing process. In some embodiments, the ashing process is performed using plasma (PL), and the gas used in the plasma includes O2, Ar, CF4, SF6, or other suitable gases. In some embodiments, since the ashing process only removes organic material, it only removes a portion of the substrate 100m below the first via TH1, without removing the patterned hard mask layer 500 and the pad P below the second via TH2.

[0088] Next, return to Figure 2The light-emitting element 610 is then bonded to the pad P. Finally, the carrier plate C is removed. In some embodiments, the carrier plate C is removed using a laser lift-off process, but the invention is not limited thereto.

[0089] Figure 4 This is a cross-sectional schematic diagram of a stretchable display panel 20 according to an embodiment of the present invention. It must be noted here that... Figure 4 The embodiments follow Figure 2 The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.

[0090] Figure 4 Stretchable display panel 20 and Figure 2 The difference between the stretchable display panel 10 and the stretchable display panel 20 is that the stretchable display panel 20 also includes multiple active elements AE.

[0091] Please refer to Figure 4 In this embodiment, the patterned insulating structure (PIS) further includes a buffer layer 710, a gate insulating layer 720, an interlayer dielectric layer 730, and a fourth buffer layer 340. The buffer layer 710 is located on the stretchable film 100. The semiconductor layer 800 is located on the buffer layer 710. The semiconductor layer 800 is a single-layer or multi-layer structure, comprising amorphous silicon, polycrystalline silicon, microcrystalline silicon, monocrystalline silicon, organic semiconductor materials, oxide semiconductor materials (e.g., indium zinc oxide, indium gallium zinc oxide, or other suitable materials, or combinations thereof), or other suitable materials or combinations thereof.

[0092] A gate insulating layer 720 is located above a buffer layer 710 and a semiconductor layer 800. A gate 400 is located above the gate insulating layer 720 and overlaps the semiconductor layer 800. An interlayer dielectric layer 730 is located above the gate insulating layer 720 and the gate 400. A first conductive layer 410 is located above the interlayer dielectric layer 730 and includes a first source / drain 412 and a second source / drain 414. The first source / drain 412 and the second source / drain 414 are electrically connected to the semiconductor layer 800. In this embodiment, the active element AE includes a gate 400, a semiconductor layer 800, a first source / drain 412, and a second source / drain 414, and the active element AE is disposed on the second island portion TP2 of the patterned insulating structure PIS (see reference). Figure 1A and Figure 1B )middle.

[0093] A first buffer layer 310 is located on a first conductive layer 410. A first insulating layer 210 is located on a first buffer layer 310. A second buffer layer 320 is located on a first insulating layer 210. A second conductive layer 420 is located on a second buffer layer 320, and at least a portion of the second conductive layer 420 is electrically connected to a second source / drain 414. A second insulating layer 220 is located on both the second conductive layer 420 and the second buffer layer 320. A third buffer layer 330 is located on the second insulating layer 220. A third conductive layer 430 is located on a third buffer layer 330, and at least a portion of the third conductive layer 430 is electrically connected to the second conductive layer 420. A third insulating layer 230 is located on both the third buffer layer 330 and the third conductive layer 430. A fourth buffer layer 340 is located on the third insulating layer 230. A pad P is located on the fourth buffer layer 340, and at least a portion of the pad P is electrically connected to the third conductive layer 430.

[0094] A patterned hard mask layer 500 covers the patterned insulating structure PIS. The hard mask layer 500 extends from the top surface of the patterned insulating structure PIS into the second opening O2 of the patterned insulating structure PIS and covers the second island portion TP2 (see reference). Figure 1A ) and the second bridging section WP2 (please refer to) Figure 1A The sidewalls of the patterned hard mask layer 500 overlap the first opening O1 (see reference). Figure 2 Multiple first through holes TH1 and multiple second through holes TH2 overlapping the pad P.

[0095] In summary, this invention cleans the surface of the hard mask layer using a photoresist remover solution before forming the patterned photoresist on the hard mask layer. Therefore, the first via of the patterned hard mask layer has steep sidewalls. Because the first via has steep sidewalls, damage to the patterned hard mask layer can be avoided during substrate patterning, and the sidewalls of the first opening of the stretchable film are made closer to the vertical plane.

Claims

1. A stretchable display panel, comprising: A stretchable membrane having a plurality of first openings, wherein the stretchable membrane includes a plurality of first island portions and a plurality of first bridging portions, adjacent first island portions being connected via corresponding first bridging portions, and at least two of the first island portions being separated by one of the first openings. Patterned insulation structures, including: Multiple second island sections; and A plurality of second bridging portions, wherein adjacent second island portions are connected via corresponding second bridging portions, wherein the patterned insulating structure has a plurality of second openings, at least two of the second island portions being separated by one of the second openings; Multiple light-emitting elements are located above these second island-shaped portions; Multiple conductors, located in these second bridging portions and extending into the corresponding second island portions; and A patterned hard mask layer extends from the top surface of the patterned insulating structure into the second openings of the patterned insulating structure, and covers the sidewalls of the second island portions and the second bridging portions of the patterned insulating structure and a portion of the top surface of the stretchable film. It has a plurality of first through-holes overlapping the first openings, each first opening having a width greater than the width of each first through-hole. Each first through-hole includes an inclined sidewall overlapping the corresponding first through-hole and having a horizontal width of less than 0.5 micrometers. The angle between the inclined sidewall and the bottom surface of the patterned hard mask layer is 40° to 60°, wherein the thickness of the patterned hard mask layer is less than or equal to 1000 angstroms.

2. The stretchable display panel as described in claim 1, further comprising: Multiple active elements are disposed in the island-shaped portions, wherein the patterned hard mask layer is separated from the conductors.

3. The stretchable display panel as described in claim 1, further comprising: Multiple pads are disposed on the surface of the second island portions, and the patterned hard mask layer also includes multiple second through holes overlapping the pads. Each light-emitting element is electrically connected to the corresponding pad through a conductive connection structure and the corresponding second through hole.

4. The stretchable display panel of claim 3, wherein the patterned hard mask layer contacts the pads.

5. The stretchable display panel of claim 1, wherein the material of the patterned hard mask layer comprises a metal oxide, wherein the metal oxide is indium tin zinc oxide or indium gallium zinc oxide.

6. A method for manufacturing a stretchable display panel, comprising: A patterned insulating structure is formed on a substrate, wherein the patterned insulating structure includes a plurality of island portions and a plurality of bridging portions, and adjacent island portions are connected via corresponding bridging portions. A hard mask layer is formed on the patterned insulating structure and the substrate; Clean the surface of the hard mask layer with a photoresist remover solution; A patterned photoresist is formed on the surface of the hard mask layer; The hard mask layer is patterned using the patterned photoresist as a mask to form a patterned hard mask layer having a plurality of first vias, each first via including an inclined sidewall, wherein the thickness of the patterned hard mask layer is less than or equal to 1000 angstroms; and The substrate is patterned using the patterned hard mask layer as a mask to form a stretchable film.

7. The method for manufacturing a stretchable display panel as claimed in claim 6, wherein the photoresist solution comprises a combination of monoethanolamine and dimethyl sulfoxide.

8. The method of manufacturing a stretchable display panel as claimed in claim 6, wherein the method of patterning the hard mask layer using the patterned photoresist as a mask includes wet etching, and the method of patterning the substrate using the patterned hard mask layer as a mask includes dry etching.

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