Phase shifter, preparation method thereof, and antenna

Abstract

The present disclosure provides a phase shifter, a preparation method thereof, and an antenna, belonging to the field of communication technology. The phase shifter disclosed herein comprises: a first dielectric substrate having a first surface and a second surface arranged opposite to each other; the first dielectric substrate comprising a first groove portion and a second groove portion; a second dielectric substrate and a third dielectric substrate both arranged opposite to the first dielectric substrate; the phase shifter further comprises at least one first phase shifting unit and at least one second phase shifting unit; wherein the first phase shifting unit comprises a first electrode arranged in the first groove portion, a second electrode arranged on a side of the second dielectric substrate close to the first dielectric substrate, and a first adjustable dielectric layer located between the first electrode and the second electrode; the second phase shifting unit comprises a third electrode arranged in the second groove portion, a fourth electrode arranged on a side of the third dielectric substrate close to the first dielectric substrate, and a second adjustable dielectric layer located between the first electrode and the fourth electrode.

Description

Technical Field

[0001] The present disclosure belongs to the field of communication technology, and particularly relates to a phase shifter, a preparation method thereof, and an antenna. Background Art

[0002] To meet the demands of the 5G era for faster signal transmission and wider content, the current mainstream solution is to use antennas to transmit electromagnetic wave signals for signal transmission and reception between communication devices. Antennas are a type of array antenna that changes the direction of the array beam pattern by controlling the feed phase of the radiating elements within the array. The primary purpose of a phased array is to achieve spatial scanning of the array beam, known as electronic scanning. Phase shifters, as key antenna components, improve the power combining efficiency and the return signal combining efficiency by altering the phase alignment of antenna components, enabling beam switching / scanning and enhancing communication system capabilities. Currently used phase shifters are primarily mechanical and electronic. Mechanical phase shifters are constrained by inertia, making them unable to change phase quickly and swiftly. They are also bulky and heavy. While electronic phase shifters overcome their drawbacks, they are costly, complex, have poor intermodulation performance, and cannot achieve continuous phase adjustment. A liquid crystal phase shifter is a device that applies voltage to the upper and lower substrates containing liquid crystal to form overlapping capacitance, thereby changing the dielectric constant of the liquid crystal material, causing the phase constant of the electromagnetic wave on the device to change, ultimately achieving the effect of adjusting the phase shift amount, thereby realizing beam scanning of the antenna device.

[0003] Existing liquid crystal phase shifters suffer from excessively large planar areas, limited signal processing grayscales and phase shifting, low phase shifting, poor uniformity, and high loss. With the increasing demands placed on antennas for 5G communications, the phase shifting and uniformity of existing liquid crystal phase shifters are unlikely to meet the transmission speed and accuracy requirements. Furthermore, they suffer from technical drawbacks such as high loss due to the thick liquid crystal layer, long response times, narrow operating bandwidth, and severe dispersion. With the widespread adoption of Massive MIMO technology in the 5G era and the increasing number of antennas per device, the development of more refined, miniaturized, and high-performance antenna arrays is imperative. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art and provides an antenna and a preparation method thereof, and an antenna.

[0005] In a first aspect, an embodiment of the present disclosure provides a phase shifter, comprising:

[0006] A first dielectric substrate having a first surface and a second surface opposite to each other; the first dielectric substrate including a first groove portion extending through the first surface and a second groove portion extending through the second surface;

[0007] A second dielectric substrate and a third dielectric substrate are both arranged opposite to the first dielectric substrate, and the second dielectric substrate is arranged on a side of the first surface facing away from the second surface, and the third dielectric substrate is arranged on a side of the second surface facing away from the first surface;

[0008] The phase shifter further includes at least one first phase shift unit and at least one second phase shift unit; wherein,

[0009] The first phase shifting unit includes a first electrode disposed in the first slot, a second electrode disposed on a side of the second dielectric substrate close to the first dielectric substrate, and a first adjustable dielectric layer located between the first electrode and the second electrode;

[0010] The second phase shifting unit includes a third electrode disposed in the second slot, a fourth electrode disposed on a side of the third dielectric substrate close to the first dielectric substrate, and a second adjustable dielectric layer located between the first electrode and the fourth electrode.

[0011] The first groove portions and the second groove portions are arranged in a one-to-one correspondence, and the correspondingly arranged first groove portions and the second groove portions share a common bottom.

[0012] In which, the phase shifter also includes a first connecting via. For a first groove portion and a corresponding second groove portion, the first connecting via passes through the bottom of the two, and the first electrode located in the first groove portion and the third electrode located in the second groove portion are electrically connected through the first connecting electrode passing through the first connecting via.

[0013] Among them, for one first groove portion and the corresponding second groove portion, the first electrode located in the first groove portion, the third electrode located in the second groove portion, and the first connecting electrode electrically connecting the first electrode and the second electrode are an integrated structure.

[0014] The first phase shift unit further includes a first bias voltage line electrically connected to the second electrode, and the second phase shift unit further includes a fourth bias voltage line electrically connected to the fourth electrode.

[0015] The first bias voltage line is arranged on a side of the second electrode close to the second dielectric substrate, and the second bias voltage line is arranged on a side of the fourth electrode close to the third dielectric substrate.

[0016] The phase shifter further includes a second connecting via hole penetrating the first dielectric substrate along a thickness direction of the first dielectric substrate, and a second connecting electrode penetrating the second connecting via hole and electrically connecting the first phase shift unit and the second phase shift unit.

[0017] The second connecting electrode includes a first connecting portion located on the first surface, a second connecting portion located on the second surface, and a third connecting portion located in the second connecting via hole and electrically connecting the first connecting portion and the second connecting portion.

[0018] The first phase shifting unit further includes a first protective layer provided on a side of the first electrode facing away from the third dielectric substrate, and a second protective layer provided on a side of the second electrode facing away from the second dielectric substrate; the second phase shifting unit further includes a third protective layer provided on a side of the third electrode facing away from the second dielectric substrate, and a fourth protective layer provided on a side of the fourth electrode facing away from the third dielectric substrate.

[0019] The first phase shifting unit further includes a first supporting structure disposed in the first slot for supporting the second dielectric substrate; the second phase shifting unit further includes a second supporting structure disposed in the second slot for supporting the third dielectric substrate.

[0020] In a second aspect, an embodiment of the present disclosure provides a method for manufacturing a phase shifter, comprising:

[0021] A first dielectric substrate, a second dielectric substrate, and a third dielectric substrate are provided. The second dielectric substrate has a first surface and a second surface disposed opposite each other. The first dielectric substrate includes a first groove extending through the first surface and a second groove extending through the second surface. The second dielectric substrate and the third dielectric substrate are both disposed opposite the first dielectric substrate, with the second dielectric substrate disposed on a side of the first surface facing away from the second surface, and the third dielectric substrate disposed on a side of the second surface facing away from the first surface.

[0022] The preparation method further includes: forming at least one first phase shifting unit between the first dielectric substrate and the second dielectric substrate, and forming at least one second phase shifting unit between the first dielectric substrate and the third dielectric substrate; wherein,

[0023] The step of forming the first phase shift unit includes: forming a first electrode in the first groove, forming a second electrode on a side of the second dielectric substrate close to the first dielectric substrate, and forming a first adjustable dielectric layer between the first electrode and the second electrode;

[0024] The step of forming the second dielectric substrate includes: forming a third electrode in the second groove, forming a fourth electrode on a side of the third dielectric substrate close to the first dielectric substrate, and forming a second adjustable dielectric layer between the first electrode and the fourth electrode.

[0025] The first groove portions and the second groove portions are arranged in a one-to-one correspondence, and the corresponding first groove portions and the second groove portions share a common bottom. The first dielectric substrate further includes a first connecting via hole. For a first groove portion and a corresponding second groove portion, the first connecting via hole penetrates the bottoms of both. The preparation method further includes forming a first electrode that penetrates the first connecting via hole. The first electrode located in the first groove portion and the third electrode located in the second groove portion are electrically connected via the first connecting electrode.

[0026] The first electrode, the third electrode and the first connecting electrode are formed by a single process.

[0027] The first dielectric substrate further includes a second connecting via hole penetrating the first dielectric substrate along a thickness direction of the first dielectric substrate; and the preparation method further includes: forming a second connecting electrode penetrating the second connecting via hole to electrically connect the first phase shift unit and the second phase shift unit.

[0028] In a third aspect, the present disclosure discloses an antenna according to an embodiment, which includes any of the phase shifters described above. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 Schematic diagram of the structure of the liquid crystal phase shifter according to an embodiment of the present disclosure.

[0030] Figure 2 Schematic diagram of the structure of the first dielectric substrate of the liquid crystal phase shifter according to an embodiment of the present disclosure.

[0031] Figure 3 This is a flow chart of the preparation of the first dielectric substrate layer structure of the method for preparing the liquid crystal phase shifter according to an embodiment of the present disclosure.

[0032] Figure 4 This is a flow chart of the preparation of the structures of each layer of the second dielectric substrate in the method for preparing the liquid crystal phase shifter according to an embodiment of the present disclosure.

[0033] Figure 5 This is a flow chart of the preparation of the first dielectric substrate layer structure of the method for preparing the liquid crystal phase shifter according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0034] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0035] Unless otherwise defined, the technical or scientific terms used in this disclosure should have the usual meanings understood by people with ordinary skills in the field to which this disclosure belongs. The words "first", "second" and similar words used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one", "an" or "the" do not indicate a quantity limitation, but rather indicate the existence of at least one. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0036] Before describing the embodiments of the present disclosure, it should be noted that the phase shifter in the embodiments of the present disclosure can specifically be a liquid crystal phase shifter. In this case, the first adjustable dielectric layer in the first phase shifter unit and the second adjustable dielectric layer in the second phase shifter unit are both liquid crystal layers. For ease of description, the liquid crystal layer in the first phase shifter unit will be referred to as the first liquid crystal layer, and the liquid crystal layer in the second phase shifter unit will be referred to as the second liquid crystal layer in the following examples. Furthermore, the embodiments of the present disclosure only use a liquid crystal phase shifter as an example. That is, the first and second adjustable dielectric layers are not limited to liquid crystal layers. Any material capable of changing the dielectric constant under the action of an electric field is within the scope of protection of the embodiments of the present disclosure.

[0037] Firstly, Figure 1 Schematic diagram of the structure of the liquid crystal phase shifter according to an embodiment of the present disclosure; Figure 2 FIG. 1 is a schematic structural diagram of a first dielectric substrate of a liquid crystal phase shifter according to an embodiment of the present disclosure; FIG. Figure 1 and 2 As shown, an embodiment of the present disclosure provides a liquid crystal phase shifter, which includes a first dielectric substrate 10, a second dielectric substrate 20, a third dielectric substrate 30, at least one first phase shifter 1 disposed between the first dielectric substrate 10 and the second dielectric substrate 20, and at least one second phase shifter 2 disposed between the first dielectric substrate 10 and the third dielectric substrate 30.

[0038] Specifically, the first dielectric substrate 10 has a first surface and a second surface disposed opposite each other; the first dielectric substrate 10 includes a first groove 101 extending through the first surface and a second groove 102 extending through the second surface. The first phase shifter 1 includes a first electrode 11 disposed within the first groove 101, a second electrode 12 disposed on a side of the second dielectric substrate 20 proximate to the first dielectric substrate 10, and a first liquid crystal layer 13 located between the first and second electrodes 11 and 12. Specifically, the first liquid crystal layer 13 is located within the first groove 101. The second phase shifter 2 includes a third electrode 21 disposed within the second groove 102, a fourth electrode 22 disposed on a side of the third dielectric substrate 30 proximate to the first dielectric substrate 10, and a second liquid crystal layer 23 located between the third and fourth electrodes 21 and 22. Specifically, the second liquid crystal layer 23 is located within the second groove 102. By applying a DC bias voltage to the first electrode 11 and the second electrode 12 to change the dielectric constant of the first liquid crystal layer 13, and applying a DC bias voltage to the third electrode 21 and the fourth electrode 22 to change the dielectric constant of the second liquid crystal layer 23, the phase of the electromagnetic wave is adjusted.

[0039] In the embodiment of the present disclosure, the first phase shift unit 1 and the second phase shift unit 2 are electrically connected, and the two can be connected in series or in parallel. Figure 1 In the embodiment, the number of the first phase shifting units 1 and the number of the second phase shifting units 2 in the phase shifter are both multiple, and the two are arranged in a one-to-one correspondence. However, it should be understood that the number of the first phase shifting units 1 and the number of the second phase shifting units 2 may also be different, and the two are not necessarily arranged in a one-to-one correspondence. In the disclosed embodiment, only the one-to-one correspondence between the first phase shifting unit 1 and the second phase shifting unit 2 is used as an example for description.

[0040] In the embodiment of the present disclosure, a first groove 101 and a second groove 102 are provided on the first dielectric substrate 10 to accommodate the first liquid crystal layer 13 in the first phase shifter 1 and the second liquid crystal layer 23 in the second phase shifter 2, respectively. In this case, the thickness of the first dielectric substrate 10 is reduced, and the dielectric loss is also reduced.

[0041] In some examples, the first phase shifter unit 1 and the second phase shifter unit 2 are provided in a one-to-one correspondence, and the corresponding first phase shifter unit 1 and the second phase shifter unit 2 are connected in series. Specifically, for the corresponding first phase shifter unit 1 and the second phase shifter unit 2, the first groove portion 101 and the second groove portion 102 are provided in a corresponding manner and share a common bottom. The phase shifter includes a first connection via 103 extending through the bottoms of the first and second groove portions 101 and 102, and the first connection electrode 3 is filled in the first connection via 103. The first electrode 11 of the first phase shifter unit 1 is electrically connected to the third electrode 21 of the second phase shifter unit 2 via the first connection electrode 3.

[0042] Furthermore, the first electrode 11, the third electrode 21 and the first connecting electrode 3 can be prepared in one process, for example, the first electrode 11, the third electrode 21 and the first connecting electrode 3 are formed in one electroplating process. For the specific formation process, please refer to the following phase shifter preparation method.

[0043] Furthermore, both the first phase shifter 1 and the second phase shifter 2 include not only the aforementioned structure, but also include a first bias voltage line 14 electrically connected to the second electrode 12 in the first phase shifter 1, and a second bias voltage line 24 electrically connected to the fourth electrode 22 in the second phase shifter 2. For example, the first bias voltage line 14 is disposed on a side of the second electrode 12 closer to the second dielectric substrate 20, and the second bias voltage line 24 is disposed on a side of the fourth electrode 22 closer to the third dielectric substrate 30. Materials for the first bias voltage line 14 and the second bias voltage line 24 include, but are not limited to, indium tin oxide (ITO).

[0044] In some examples, the phase shifter includes not only the above structure, but also includes a second connecting via 104 penetrating the first dielectric substrate 10 along the thickness direction of the first dielectric substrate 10, and a second connecting electrode 4 penetrating the second connecting via 104. The second connecting electrode 4 can connect the first phase shift unit 1 to the second phase shift unit 2.

[0045] Furthermore, the second connection electrode 4 can be located at the first connection portion of the first surface, the second connection portion of the second surface, and the third connection portion within the second connection via 104, electrically connecting the first connection portion and the second connection portion. Accordingly, a first conductive pattern 5 can be formed on the second dielectric substrate 20, and a second conductive pattern 6 can be formed on the third dielectric substrate 30. The first connection portion and the first conductive pattern 5 are in direct contact and electrical connection, and the second connection portion and the second conductive pattern 6 are in direct contact and electrical connection. The first conductive pattern 5 is connected to the first phase shifter 1, and the second conductive pattern 6 is electrically connected to the second phase shifter 2. In this case, by forming the second connection via 104 on the first dielectric substrate 10, the planar structure is rendered three-dimensional, enabling signal transmission through a three-dimensional stacking method, reducing signal delay and loss.

[0046] Furthermore, the second connecting electrode 4 can be fabricated in a single process with the first electrode 11. The first conductive pattern 5 can be fabricated in a single process with the second electrode 12, and the second conductive pattern 6 can be fabricated in a single process with the fourth electrode 22. In this case, the phase shifter structure is lightweight and thin, and process costs can be reduced.

[0047] In some examples, the first phase-shifting unit 1 includes not only the above structure but also a first protective layer 15 disposed on the side of the first electrode 11 near the first liquid crystal layer 13, and a second protective layer 16 disposed on the side of the second electrode 12 near the first liquid crystal layer 13. The first protective layer 15 effectively prevents oxidation of the first electrode 11, and the second protective layer 16 effectively prevents oxidation of the second electrode 12. Correspondingly, the second phase-shifting structure also includes the above structure but also includes a third protective layer 25 disposed on the side of the third electrode 21 near the second liquid crystal layer 23, and a fourth protective layer 26 disposed on the side of the fourth electrode 22 near the second liquid crystal layer 23. The third protective layer 25 effectively prevents oxidation of the third electrode 21, and the fourth protective layer 26 effectively prevents oxidation of the fourth electrode 22.

[0048] Furthermore, the first phase shifter unit 1 is further provided with a first support structure 17 located within the first groove 101 and between the first protective layer 15 and the second protective layer 16, for supporting the second dielectric substrate 20, thereby maintaining the cell thickness of the first liquid crystal layer 13. The second phase shifter structure is further provided with a second support structure 27 located within the second groove 102 and between the third protective layer 25 and the fourth protective layer 26, for supporting the third dielectric substrate 30, thereby maintaining the cell thickness of the liquid crystal layer.

[0049] In some examples, the materials of the first dielectric substrate 10, the second dielectric substrate 20, and the third dielectric substrate 30 in the embodiments of the present disclosure include but are not limited to glass. In the embodiments of the present disclosure, only the first dielectric substrate 10, the second dielectric substrate 20, and the third dielectric substrate 30 are taken as an example of using glass.

[0050] In some examples, the materials of the first electrode 11, the second electrode 12, the third electrode 21, the fourth electrode 22, the first connection electrode 3, the second connection electrode 4, the first conductive pattern 5, and the second conductive pattern 6 in the embodiments of the present disclosure can all be selected from metal materials with good electromagnetic properties, such as copper, gold, silver, or aluminum. In the embodiments of the present disclosure, copper is used as the material for the first electrode 11, the second electrode 12, the third electrode 21, the fourth electrode 22, the first connection electrode 3, the second connection electrode 4, the first conductive pattern 5, and the second conductive pattern 6 as an example.

[0051] In a second aspect, the present disclosure provides a method for preparing a liquid crystal phase shifter, which can be used to prepare the above-mentioned Figure 1The liquid crystal phase shifter shown. The manufacturing method of the liquid crystal phase shifter in the embodiment of the present disclosure may include: providing a first dielectric substrate 10, a second dielectric substrate 20 and a third dielectric substrate 30, wherein the second dielectric substrate 20 has a first surface and a second surface arranged opposite to each other; the first dielectric substrate 10 includes a first groove portion 101 penetrating the first surface and a second groove portion 102 penetrating the second surface; the second dielectric substrate 20 and the third dielectric substrate 30 are both arranged opposite to the first dielectric substrate 10, with the second dielectric substrate 20 arranged on the side of the first surface facing away from the second surface, and the third dielectric substrate 30 arranged on the side of the second surface facing away from the first surface; and forming at least one first dielectric substrate 10 between the first dielectric substrate 10 and the second dielectric substrate 20. The phase shifting unit 1 includes at least one second phase shifting unit 2 formed between a first dielectric substrate 10 and a third dielectric substrate 30. The steps of forming the first phase shifting unit 1 include forming a first electrode 11 within a first groove 101, forming a second electrode 12 on a side of a second dielectric substrate 20 adjacent to the first dielectric substrate 10, and forming a first tunable dielectric layer between the first electrode 11 and the second electrode 12. The steps of forming the second dielectric substrate 20 include forming a third electrode 21 within a second groove 102, forming a fourth electrode 22 on a side of the third dielectric substrate 30 adjacent to the first dielectric substrate 10, and forming a second tunable dielectric layer between the first electrode 11 and the fourth electrode 22.

[0052] In the liquid crystal phase shifter formed by the preparation method of the embodiment of the present disclosure, the first groove portion 101 and the second groove portion 102 on the first dielectric substrate 10 are respectively used to accommodate the first liquid crystal layer 13 in the first phase shift unit 1 and the second liquid crystal layer 23 in the second phase shift unit 2. In this case, the thickness of the first dielectric substrate 10 is reduced, and at the same time, the dielectric loss is also reduced.

[0053] In order to make the preparation method of the liquid crystal phase shifter in the example of the present disclosure clearer, the following is the preparation method of the liquid crystal phase shifter. Figure 1 Taking the liquid crystal phase shifter shown in FIG. 1 as an example, the preparation method of the liquid crystal phase shifter according to the embodiment of the present disclosure is described.

[0054] The method for manufacturing a liquid crystal phase shifter includes forming each layer structure on a first dielectric substrate 10, forming each layer structure on a second dielectric substrate 20, and forming each layer structure on a third dielectric substrate 30. The first and second dielectric substrates 10, 20 are then assembled, die-casted, and electrically connected. The first and third dielectric substrates 10, 30 are then assembled, die-casted, and electrically connected. The order of preparing the layers on the first dielectric substrate 10, the layers on the second dielectric substrate 20, and the layers on the third dielectric substrate 30 can be interchanged and is not limited in this embodiment. Next, the specific steps of forming each layer structure on the first dielectric substrate 10, forming each layer structure on the second dielectric substrate 20, and forming each layer structure on the third dielectric substrate 30, assembling the first and second dielectric substrates 10, 20, die-casting, and electrically connecting, and assembling the first and third dielectric substrates 10, 30, are described in detail.

[0055] Figure 3 FIG. 1 is a flow chart of the preparation of the first dielectric substrate 10 of the method for preparing the liquid crystal phase shifter according to an embodiment of the present disclosure; FIG. Figure 3 As shown, forming each layer structure on the first dielectric substrate 10 specifically includes the following steps:

[0056] S11. Provide a first dielectric substrate 10. The first dielectric substrate 10 has a first surface and a second surface opposite to each other. The first dielectric substrate 10 includes a first groove 101, a second groove 102, a first connecting via 103, and a second connecting via 104. The first groove 101 extends through the first surface, and the second groove 102 extends through the second surface. The first connecting via 103 extends through the bottoms of the corresponding first groove 101 and second groove 102. The second connecting via 104 extends through the first dielectric substrate 10 along its thickness.

[0057] In some examples, the first groove 101, the second groove 102, the first connecting via 103, and the second connecting via 104 on the first dielectric substrate 10 in step S11 can be formed using methods such as sandblasting, photosensitive glass etching, focused discharge etching, plasma etching, laser ablation, electrochemical etching, and laser-induced etching. Different methods have different advantages and disadvantages and scopes of application. For example, the sandblasting method has the advantage of being simple. This method produces first connecting vias 103 with a larger aperture, but is only suitable for forming connecting vias with an aperture greater than 200 μm. The photosensitive glass etching method has the advantage of being simple and can produce first connecting vias 103 with a high density and a high aspect ratio. The focused discharge etching method has the advantage of a high hole forming speed. Plasma etching produces first connecting vias 103 with low sidewall roughness. The laser ablation method has the advantage of being able to produce connecting vias with a high density and a high aspect ratio, with a high roughness. The advantages of the electrochemical method are low cost, simple equipment, fast hole formation rate, and a large diameter of the first connecting via 103. The advantages of the laser-induced etching method are fast hole formation rate, the ability to produce high-density, high-aspect-ratio connecting vias, and no damage to the inside of the vias. The disadvantage is that the laser equipment is expensive. Here, laser-induced etching is used as an example to form a rear via on the back side. First, a laser is used to induce modification of the location where the connecting via is to be made, and then a wet etching method is used to form the via.

[0058] S12 , forming the first electrode 11 , the third electrode 21 , the first connecting electrode 3 and the second connecting electrode 4 on the first dielectric substrate 10 .

[0059] In some examples, taking copper as the material of the first electrode 11, the third electrode 21, the first connecting electrode 3, and the second connecting electrode 4, step S12 can specifically adopt a sputtering process to sequentially form MO / Cu or Ti / Cu metal as the first seed layer, and then deposit 2-5um thick copper by electroplating, and then form the first electrode 11, the third electrode 21, the first connecting electrode 3, and the second connecting electrode 4 by exposure, development, and etching. Among them, there are two electroplating methods. The first is an additive method. After the seed layer is deposited, a plated PR barrier is first formed by a photolithography process, and then electroplating is performed. After the electroplating is completed, a strip and copper etching process are performed to form the patterned first electrode 11, the third electrode 21, the first connecting electrode 3, and the second connecting electrode 4. The second is a subtractive method. After the seed layer is deposited, electroplating is directly performed to form a certain thickness of copper, and then its patterning is achieved by photolithography and etching processes.

[0060] S13 , forming a first protective layer 15 on the first electrode 11 , and forming a third protective layer 25 on the third electrode 21 .

[0061] In some examples, step S13 may include depositing a certain thickness of the first electrode 11 by a PECVD device. SiN is used as the first protective layer 15, and then the first protective layer 15 is patterned by exposure, development, and etching. Similarly, a certain thickness of SiN is deposited on the third electrode 21 by PECVD equipment. SiN is used as the third protective layer 25, and then the third protective layer 25 is patterned by exposure, development, and etching.

[0062] At this point, the preparation of each layer structure on the first dielectric substrate 10 is completed.

[0063] Figure 4 FIG. 1 is a flow chart showing the preparation of each layer structure of the second dielectric substrate 20 in the method for preparing the liquid crystal phase shifter according to an embodiment of the present disclosure; FIG. Figure 4 As shown, forming each layer structure on the second dielectric substrate 20 specifically includes the following steps:

[0064] S21 , forming a first bias voltage line 14 on the second dielectric substrate 20 .

[0065] In some examples, taking ITO as an example, step S21 may include depositing a layer of ITO material on the second dielectric substrate 20, with a thickness of ITO of Then, a pattern including the first bias voltage line 14 is formed through exposure, development, and etching processes.

[0066] S22 , forming a second electrode 12 and a first conductive pattern 5 on the first bias voltage line 14 .

[0067] In some examples, taking copper as the material of the second electrode 12 as an example, step S22 may include depositing a certain thickness of copper by a Sputter device. Copper of about 100 μm is used as the second seed layer, and then a certain thickness, such as about 3 μm, of copper is deposited by electroplating. Thereafter, a pattern including the second electrode 12 and the first conductive pattern 5 is formed by exposure, development, and etching.

[0068] S23 , forming a second protective layer 16 on the second electrode 12 .

[0069] In some examples, step S23 may include depositing a layer of one or more inorganic films such as SiN, SiO, SiON, etc. as the second protective layer 16 by PECVD equipment, with a thickness of Then, the second protective layer 16 is patterned by exposure, development, and etching.

[0070] S24 , forming a first supporting structure 17 on the second protective layer 16 .

[0071] In some examples, step S24 may include coating a layer of the first support structure 17 material with a certain thickness by spin coating or slit coating, and then forming a pattern including the spacers PS by a photolithography process.

[0072] At this point, the preparation of each layer structure on the second dielectric substrate 20 is completed.

[0073] Figure 5 FIG. 1 is a flow chart of the preparation of the various layers of the first dielectric substrate 10 in the method for preparing the liquid crystal phase shifter according to an embodiment of the present disclosure; FIG. Figure 5 As shown, forming each layer structure on the third dielectric substrate 30 specifically includes the following steps:

[0074] S31 , forming a second bias voltage line 24 on the third dielectric substrate 30 .

[0075] In some examples, taking ITO as an example, step S21 may include depositing a layer of ITO material on the second dielectric substrate 20, with a thickness of ITO of Then, a pattern including the first bias voltage line 14 is formed through exposure, development, and etching processes.

[0076] S32 , forming a fourth electrode 22 and a second conductive pattern 6 on the second bias voltage line 24 .

[0077] In some examples, taking copper as the material of the fourth electrode 22, step S32 may include depositing a certain thickness of copper by a Sputter device. Copper of about 100 μm is used as the second seed layer, and then a certain thickness, such as about 3 μm, of copper is deposited by electroplating. Thereafter, a pattern including the fourth electrode 22 and the second conductive pattern 6 is formed by exposure, development, and etching.

[0078] S33 , forming a fourth protective layer 26 on the second electrode 12 .

[0079] In some examples, step S33 may include depositing a layer of one or more inorganic films such as SiN, SiO, SiON, etc. as the fourth protective layer 26 by PECVD equipment, with a thickness of Then, the second protective layer 16 is patterned by exposure, development, and etching.

[0080] S34 , forming a second supporting structure 27 on the fourth protective layer 26 .

[0081] In some examples, step S34 may include coating a layer of the second support structure 27 material with a certain thickness by spin coating or slit coating, and then forming a pattern including the spacers PS by a photolithography process.

[0082] At this point, the preparation of each layer structure on the third dielectric substrate 30 is completed.

[0083] The steps of aligning the first dielectric substrate 10 and the second dielectric substrate 20, performing wafer filling and electrical connection, and aligning the first dielectric substrate 10 and the third dielectric substrate 30, performing wafer filling and electrical connection specifically include the following steps:

[0084] S41 , PI liquid is coated on the first dielectric substrate 10 and the second dielectric substrate 20 respectively, and then cured to form a film, and then the OA process is performed; finally, a frame sealant is coated around the device, and liquid crystal is dripped to form a first liquid crystal layer 13, and at the same time, the electrical connection of the structures on the first dielectric substrate 10 and the second dielectric substrate 20 is completed.

[0085] S41 , PI liquid is coated on the first dielectric substrate 10 and the third dielectric substrate 30 , respectively, and then cured to form a film, followed by an OA process; finally, a frame sealant is coated around the device, and liquid crystal is dripped into the device to form a second liquid crystal layer 23 , and at the same time, the electrical connection of the structures on the first dielectric substrate 10 and the third dielectric substrate 30 is completed.

[0086] In a second aspect, an embodiment of the present disclosure provides an antenna comprising the above-mentioned phase shifter.

[0087] In some examples, the antenna provided by the embodiments of the present disclosure also includes a transceiver unit, a radio frequency transceiver, a signal amplifier, a power amplifier, and a filtering unit. The antenna in the communication device can be used as a transmitting antenna or as a receiving antenna. Among them, the transceiver unit may include a baseband and a receiving end. The baseband provides a signal of at least one frequency band, such as a 2G signal, a 3G signal, a 4G signal, a 5G signal, etc., and sends a signal of at least one frequency band to the radio frequency transceiver. After the antenna in the communication system receives the signal, it can be processed by the filtering unit, the power amplifier, the signal amplifier, and the radio frequency transceiver and then transmitted to the receiving end in the transceiver unit. The receiving end can be, for example, a smart gateway.

[0088] Furthermore, a radio frequency transceiver is connected to the transceiver unit and is used to modulate the signals sent by the transceiver unit or to demodulate the signals received by the antenna and transmit them back to the transceiver unit. Specifically, the radio frequency transceiver may include a transmitting circuit, a receiving circuit, a modulation circuit, and a demodulation circuit. After the transmitting circuit receives various types of signals provided by the baseband, the modulation circuit can modulate these various types of signals provided by the baseband and then transmit them to the antenna. The antenna receives the signal and transmits it to the receiving circuit of the radio frequency transceiver. The receiving circuit transmits the signal to the demodulation circuit, which demodulates the signal and transmits it to the receiving end.

[0089] Furthermore, the RF transceiver is connected to a signal amplifier and a power amplifier, which are then connected to a filtering unit, which is connected to at least one antenna. When the communication system transmits signals, the signal amplifier is used to increase the signal-to-noise ratio of the signal output by the RF transceiver before transmitting it to the filtering unit. The power amplifier is used to amplify the power of the signal output by the RF transceiver before transmitting it to the filtering unit. The filtering unit may specifically include a duplexer and a filtering circuit. The filtering unit combines the signals output by the signal amplifier and the power amplifier, filters out noise, and then transmits them to the antenna, which radiates the signal. When the communication system receives signals, the antenna receives the signal and transmits it to the filtering unit. The filtering unit filters out noise from the signal received by the antenna and transmits it to the signal amplifier and power amplifier. The signal amplifier amplifies the signal received by the antenna to increase the signal-to-noise ratio. The power amplifier amplifies the power of the signal received by the antenna. The signal received by the antenna is processed by the power amplifier and the signal amplifier before being transmitted to the RF transceiver, which then transmits it to the transceiver unit.

[0090] In some examples, the signal amplifier may include various types of signal amplifiers, such as a low noise amplifier, which is not limited herein.

[0091] In some examples, the antenna provided by the embodiments of the present disclosure further includes a power management unit, which is connected to a power amplifier to provide the power amplifier with a voltage for amplifying a signal.

[0092] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

[0093] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A phase shifter, comprising: A first dielectric substrate having a first surface and a second surface opposite to each other; The first dielectric substrate includes a first groove portion extending through the first surface and a second groove portion extending through the second surface; A second dielectric substrate and a third dielectric substrate are both arranged opposite to the first dielectric substrate, and the second dielectric substrate is arranged on a side of the first surface facing away from the second surface, and the third dielectric substrate is arranged on a side of the second surface facing away from the first surface; The phase shifter further includes at least one first phase shift unit and at least one second phase shift unit; wherein, The first phase shifting unit includes a first electrode disposed in the first slot, a second electrode disposed on a side of the second dielectric substrate close to the first dielectric substrate, and a first adjustable dielectric layer located between the first electrode and the second electrode; The second phase shifting unit includes a third electrode disposed in the second slot, a fourth electrode disposed on a side of the third dielectric substrate close to the first dielectric substrate, and a second adjustable dielectric layer located between the third electrode and the fourth electrode.

2. The phase shifter according to claim 1, wherein The first groove portions and the second groove portions are arranged in a one-to-one correspondence, and the correspondingly arranged first groove portions and the second groove portions share a common bottom.

3. The phase shifter according to claim 2, wherein: It also includes a first connecting via. For a first groove portion and a corresponding second groove portion, the first connecting via passes through the bottom of the two, and the first electrode located in the first groove portion and the third electrode located in the second groove portion are electrically connected through the first connecting electrode passing through the first connecting via.

4. The phase shifter according to claim 3, wherein: For one first groove portion and the corresponding second groove portion, the first electrode located in the first groove portion, the third electrode located in the second groove portion, and a first connecting electrode electrically connecting the first electrode and the third electrode are an integrally formed structure.

5. The phase shifter according to claim 3, wherein The first phase shift unit further includes a first bias voltage line electrically connected to the second electrode, and the second phase shift unit further includes a second bias voltage line electrically connected to the fourth electrode.

6. The phase shifter according to claim 5, wherein The first bias voltage line is arranged on a side of the second electrode close to the second dielectric substrate, and the second bias voltage line is arranged on a side of the fourth electrode close to the third dielectric substrate.

7. The phase shifter according to any one of claims 1 to 6, wherein: The device further includes a second connecting via hole penetrating the first dielectric substrate along a thickness direction of the first dielectric substrate, and a second connecting electrode penetrating the second connecting via hole to electrically connect the first phase shift unit and the second phase shift unit.

8. The phase shifter according to claim 7, wherein: The second connection electrode includes a first connection portion located on the first surface, a second connection portion located on the second surface, and a third connection portion located in the second connection via hole and electrically connecting the first connection portion and the second connection portion.

9. The phase shifter according to any one of claims 1 to 6, wherein: The first phase shifting unit further includes a first protective layer provided on a side of the first electrode facing away from the third dielectric substrate, and a second protective layer provided on a side of the second electrode facing away from the second dielectric substrate; the second phase shifting unit further includes a third protective layer provided on a side of the third electrode facing away from the second dielectric substrate, and a fourth protective layer provided on a side of the fourth electrode facing away from the third dielectric substrate.

10. The phase shifter according to any one of claims 1 to 6, wherein: The first phase shifting unit further includes a first supporting structure disposed in the first slot for supporting the second dielectric substrate; the second phase shifting unit further includes a second supporting structure disposed in the second slot for supporting the third dielectric substrate.

11. A method for preparing a phase shifter, comprising: A first dielectric substrate, a second dielectric substrate and a third dielectric substrate are provided, wherein the second dielectric substrate has a first surface and a second surface opposite to each other; The first dielectric substrate includes a first groove portion extending through the first surface and a second groove portion extending through the second surface; The second dielectric substrate and the third dielectric substrate are both arranged opposite to the first dielectric substrate, and the second dielectric substrate is arranged on a side of the first surface facing away from the second surface, and the third dielectric substrate is arranged on a side of the second surface facing away from the first surface; The manufacturing method further includes: forming at least one first phase shifting unit between the first dielectric substrate and the second dielectric substrate, and forming at least one second phase shifting unit between the first dielectric substrate and the third dielectric substrate; wherein, The step of forming the first phase shift unit includes: forming a first electrode in the first groove, forming a second electrode on a side of the second dielectric substrate close to the first dielectric substrate, and forming a first adjustable dielectric layer between the first electrode and the second electrode; The step of forming the second dielectric substrate includes: forming a third electrode in the second groove, forming a fourth electrode on a side of the third dielectric substrate close to the first dielectric substrate, and forming a second adjustable dielectric layer between the third electrode and the fourth electrode.

12. The method for preparing a phase shifter according to claim 11, wherein: The first groove portions and the second groove portions are arranged in a one-to-one correspondence, and the corresponding first groove portions and the second groove portions share a common bottom. The first dielectric substrate further includes a first connecting via hole. For a first groove portion and a corresponding second groove portion, the first connecting via hole penetrates the bottoms of both. The preparation method further includes forming a first connecting electrode penetrating the first connecting via hole, wherein the first electrode located in the first groove portion and the third electrode located in the second groove portion are electrically connected via the first connecting electrode.

13. The method for preparing a phase shifter according to claim 12, wherein: The first electrode, the third electrode and the first connecting electrode are formed by a single process.

14. The method for preparing a phase shifter according to claim 11, wherein: The first dielectric substrate further includes a second connecting via hole penetrating through the first dielectric substrate along a thickness direction of the first dielectric substrate; The manufacturing method further includes: forming a second connecting electrode penetrating the second connecting via hole to electrically connect the first phase shift unit and the second phase shift unit.

15. An antenna comprising the phase shifter according to any one of claims 1 to 10.

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