A microstrip bond wire transition structure for an automated micro-assembly production line

Abstract

The application provides a microstrip bonding wire transition structure for an automated micro-assembly production line, comprising a first microstrip structure, a second microstrip structure and a bonding wire, the first microstrip structure comprising a first dielectric substrate, a first microstrip and an impedance matching structure, the impedance matching structure being connected with the second microstrip through the bonding wire; the impedance matching structure comprising at least two stubs. The application selects two four-quarter wavelength transformers as impedance matching, a transmission line is connected to a 1 / 4 wavelength short-circuit stub, then a 1 / 4 wavelength open-circuit stub is connected, two bonding wires are connected to two ends of the open-circuit stub on the two dielectric substrates, and a transition structure of microstrip-bonding wire-microstrip is formed, the T-shaped stub can compensate the parasitic inductance caused by the gold wire, plays a role of improving the signal transmission effect, simultaneously meets the bandwidth requirement, effectively reduces the assembly difficulty, is convenient for automatic assembly line bonding, and the transmission characteristic is less sensitive to the position of the bonding point.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of waveguide technology, in particular to a microstrip bonding wire transition structure for an automated micro-assembly production line. BACKGROUND

[0002] In the past, in a microwave multi-chip module (MMCM), a bonding wire is the main way to realize transmission line and transmission line interconnection, transmission line and chip interconnection. As the material for connecting the pads on the semiconductor chip used in the microwave transmission module and the external lead wire, a gold (Au) alloy with a purity of 99.99% or more is mostly used.

[0003] Nowadays, in the connection of gold (Au) alloy bonding wires, ultrasonic wave combined with hot pressing is mainly used. In this method, the front end of the exposed wire of the bonding wire is heated by discharging, and after the front end of the bonding wire is melted, a spherical object is formed due to surface tension, and then the spherical object is crimped and joined (spherical bonding) at the two ends of the electrode of the semiconductor element or the microstrip line.

[0004] The bonding work of the traditional production line needs to manually determine the bonding point position, which causes the length, spacing and arc height of the bonding wire to be greatly affected by human factors. These accidental errors can greatly affect the microwave transmission characteristics due to the deterioration of standing waves and the increase of insertion loss.

[0005] Therefore, there is a need for a bonding wire that reduces insertion loss. SUMMARY

[0006] The present application is to solve the problem of how to correct the parasitic inductance of the bonding wire while reducing the influence of the bonding point position difference on the microwave transmission characteristics. A microstrip bonding wire transition structure for an automated micro-assembly production line is provided, which selects two quarter-wave transformers for impedance matching, connects the transmission line to the 1 / 4 wavelength short-circuit stub, and then passes through a 1 / 4 wavelength open-circuit stub. Two bonding wires are connected to the two ends of the open-circuit stub on the two dielectric substrates to form a microstrip-bonding wire-microstrip transition structure. The T-shaped node can compensate for the parasitic inductance of the gold wire, improve the signal transmission effect, meet the bandwidth requirement, effectively reduce the assembly difficulty, facilitate automatic assembly line bonding, and the transmission characteristics are less sensitive to the position of the bonding point.

[0007] The present application provides a microstrip bonding wire transition structure for an automated micro-assembly production line, which comprises a first microstrip line structure, a second microstrip line structure and a bonding wire connecting the first microstrip line structure and the second microstrip line structure.

[0008] The first microstrip line structure comprises a first dielectric substrate, a first microstrip line arranged on the upper surface of the first dielectric substrate, and an impedance matching structure arranged on the upper surface of the first dielectric substrate and connected to one end of the first microstrip line.

[0009] The second microstrip line structure comprises a second dielectric substrate and a second microstrip line arranged on the upper surface of the second dielectric substrate.

[0010] The first dielectric substrate is arranged on one side of the second dielectric substrate, and the impedance matching structure is connected to the second microstrip line through a bonding wire.

[0011] The impedance matching structure comprises at least two stubs.

[0012] The impedance matching structure comprises a first stub and a second stub connected to each other.

[0013] The first stub is connected to one end of the first microstrip line, and the second stub is connected to the second microstrip line through a bonding wire.

[0014] The first stub and the second stub form a T-shaped structure.

[0015] The first stub has a length and a width smaller than those of the first microstrip line, and the second stub has a width larger than those of the first microstrip line and the second microstrip line.

[0016] The first stub is a 1 / 4 wavelength short-circuit stub, the second stub is a 1 / 4 wavelength open-circuit stub, the first microstrip line is matched with a source, and the second microstrip line is matched with a load.

[0017] The first stub is a high-resistance stub, and the second stub is a low-resistance stub.

[0018] The number of the bonding wires is two, and each bonding wire is connected to one end of the second stub.

[0019] The first microstrip line and the impedance matching structure are arranged on the upper surface of the first dielectric substrate, and the lower surface of the first dielectric substrate is covered with copper ground.

[0020] Two rows of ground holes are arranged on the upper and lower sides of the first microstrip line and the impedance matching structure.

[0021] The microstrip bonding wire transition structure for the automated micro-assembly production line has copper as the material of the first microstrip, the impedance matching structure and the second microstrip.

[0022] The technical solution of the present application is a T-shaped stub microstrip matching structure, characterized by:

[0023] The T-shaped stub microstrip matching structure is composed of two sections of quarter-wavelength stubs, a bonding wire, a dielectric substrate and a ground via, the transmission line is connected to the 1 / 4 wavelength short stub, then passes through a 1 / 4 wavelength open stub, the entire transmission line is closely attached to the dielectric substrate, the copper ground is connected below the dielectric substrate, two rows of ground holes are punched on both sides of the microstrip, the entire structure is used symmetrically in microwave transmission, the two bonding wires are respectively connected to the two ends of the open stubs on the two dielectric substrates, and the two structures are connected into a whole, realizing the transition of microstrip-bonding wire-microstrip.

[0024] As the frequency increases, the impedance mismatch caused by the parasitic effect will become more and more serious, and the T-shaped stub can compensate for the parasitic inductance of the gold wire, playing a role in improving the signal transmission effect.

[0025] The present application has the following advantages:

[0026] The present application selects two sections of quarter-wavelength transformers for impedance matching, the characteristic impedance and the frequency response characteristics of the phase velocity of each section are different, according to the principle of microwave technology, when the number of sections is fixed, the larger the impedance ratio, the larger the relative bandwidth; when the impedance ratio is fixed, the more the number of sections, the larger the relative bandwidth. For the transition structure of microstrip-bonding wire-microstrip, two sections of impedance transformation structures can meet the bandwidth requirement and effectively reduce the assembly difficulty. In addition, according to the characteristics of the Chebyshev polynomial multi-section variable resistor, the section close to the bonding wire is a low-impedance 1 / 4 wavelength stub, and the line width is smaller than that of the 50Ω microstrip line, which is convenient for automatic assembly line bonding, and the transmission characteristics are less sensitive to the position of the bonding point. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 It is a circuit schematic diagram of a microstrip bonding wire transition structure for an automated micro-assembly production line;

[0028] Figure 2 It is a model schematic diagram of a microstrip bonding wire transition structure for an automated micro-assembly production line;

[0029] Figure 3 It is a comparison diagram of the net insertion loss of the T-shaped stub transition structure of a microstrip bonding wire transition structure for an automated micro-assembly production line and the traditional gold wire bonding structure in the X frequency band.

[0030] REFERENCE NUMERALS:

[0031] 1. First microstrip line structure; 11. First dielectric substrate; 12. First microstrip line; 13. Impedance matching structure; 131. First stub; 132. Second stub; 2. Second microstrip line structure; 21. Second dielectric substrate; 22. Second microstrip line. Detailed Implementation

[0032] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0033] Example 1

[0034] like Figures 1-2 As shown, a microstrip bonding wire transition structure for an automated micro-assembly production line is characterized by comprising a first microstrip structure 1, a second microstrip structure 2, and a bonding wire 3 connecting the first microstrip structure 1 and the second microstrip structure 2.

[0035] The first microstrip line structure 1 includes a first dielectric substrate 11, a first microstrip line 12 disposed on the upper surface of the first dielectric substrate 11, and an impedance matching structure 13 disposed on the upper surface of the first dielectric substrate 11 and connected to one end of the first microstrip line 12.

[0036] The second microstrip structure 2 includes a second dielectric substrate 21 and a second microstrip line 22 disposed on the upper surface of the second dielectric substrate 21;

[0037] The first dielectric substrate 11 is disposed on one side of the second dielectric substrate 21, and the impedance matching structure 13 is connected to the second microstrip line 22 through the bonding wire 3.

[0038] Impedance matching structure 13 includes at least two short stubs;

[0039] In this embodiment, the impedance matching structure 13 includes a first stub 131 and a second stub 132 connected together.

[0040] The first stub 131 is connected to one end of the first microstrip line 12, and the second stub 132 is connected to the second microstrip line 22 through the bonding wire 3;

[0041] The first short line 131 and the second short line 132 form a T-shaped structure;

[0042] The length and width of the first stub 131 are both smaller than the first microstrip line 12, and the width of the second stub 132 is greater than that of the first microstrip line 12 and the second microstrip line 22 (width refers to the distance in the vertical direction, and length refers to the distance in the horizontal direction; the first stub 131 is connected to the right side of the first microstrip line 12, and the second stub 132 is connected to the left side of the second microstrip line 22 through bonding 3).

[0043] The first stub 131 is a 1 / 4 wavelength short-circuit stub, and the second stub 132 is a 1 / 4 wavelength open-circuit stub; the first microstrip line 12 is matched with a source, and the second microstrip line 22 is matched with a load;

[0044] The first stub 131 is a high-impedance stub, and the second stub 132 is a low-impedance stub;

[0045] The number of the bonding wires 3 is two, and the two bonding wires are connected to two ends of the second stub 132, respectively;

[0046] The first microstrip line 12 and the impedance matching structure 13 are close to the upper surface of the first dielectric substrate 11, and the lower surface of the first dielectric substrate 11 is covered with copper ground;

[0047] Two rows of ground holes are arranged on the upper and lower sides of the first microstrip line 12 and the impedance matching structure 13;

[0048] The materials of the first microstrip line 12, the impedance matching structure 13 and the second microstrip line 22 are all copper.

[0049] In the embodiment, the first microstrip line 12 and the impedance matching structure 13 form a transmission line on the first dielectric substrate 11, and the second microstrip line 22 is a transmission line on the second dielectric substrate 21;

[0050] The first dielectric substrate 11 and the second dielectric substrate 21 are both Rogers 5880 plates, and the thicknesses of the two plates are 0.254 mm; the size of the first dielectric substrate 11 is 5.1 mm*4 mm*0.254 mm, the size of the second dielectric substrate 21 is 5 mm*4 mm*0.254 mm, and the diameter of the bonding wires 3 is 0.025 mm; the material of the microstrip line is copper, and the thickness of the copper is 0.017 mm; the size of the high-impedance stub 131 is 0.4 mm*0.3 mm, and the size of the low-impedance stub 132 is 1.2 mm*0.4 mm; the bottom of the first dielectric substrate 11 and the bottom of the second dielectric substrate 21 are covered with copper; the distance between the microstrip line and the edge of the substrate is 0.1 mm, and there is a diameter of 0.1 mm ground via hole with a spacing of 0.1 mm at the distance of 0.3 mm between the two ends of the microstrip line.

[0051] Figure 3 The comparison chart of the T-shaped joint transition structure and the traditional gold wire bonding structure in the X frequency band net insertion loss shows that the transmission characteristic of the embodiment is good.

[0052] The above description is only the preferred embodiment of the present application, but the protection scope of the present application is not limited to this. Any person skilled in the art can make equivalent replacement or change according to the technical solution and the inventive concept of the present application within the technical range disclosed by the present application, which should be covered in the protection scope of the present application.

Claims

1. A microstrip bond wire transition structure for an automated micro-assembly production line, characterized by: The first microstrip line structure (1), the second microstrip line structure (2) and the bonding wire (3) connecting the first microstrip line structure (1) and the second microstrip line structure (2) are included. The first microstrip line structure (1) includes a first dielectric substrate (11), a first microstrip line (12) arranged on the upper surface of the first dielectric substrate (11) and an impedance matching structure (13) arranged on the upper surface of the first dielectric substrate (11) and connected with one end of the first microstrip line (12). The second microstrip line structure (2) includes a second dielectric substrate (21) and a second microstrip line (22) arranged on the upper surface of the second dielectric substrate (21). The first dielectric substrate (11) is arranged on one side of the second dielectric substrate (21), and the impedance matching structure (13) is connected with the second microstrip line (22) through the bonding wire (3). The impedance matching structure (13) includes at least two stubs. The impedance matching structure (13) includes a first stub (131) and a second stub (132) connected with each other. The first stub (131) is connected with one end of the first microstrip line (12), and the second stub (132) is connected with the second microstrip line (22) through the bonding wire (3), the number of the bonding wire (3) is two, and the two bonding wires (3) are connected with two ends of the second stub (132) respectively, and the bonding wire (3) is bonded through an automatic assembly line. The first stub (131) and the second stub (132) form a T-shaped structure, the length and width of the first stub (131) are both smaller than those of the first microstrip line (12), and the width of the second stub (132) is greater than those of the first microstrip line (12) and the second microstrip line (22).

2. The microstrip bond wire transition structure for an automated micro-assembly production line of claim 1, wherein: The first stub (131) is a 1 / 4 wavelength short-circuit stub, the second stub (132) is a 1 / 4 wavelength open-circuit stub, the first microstrip line (12) is matched with a source, and the second microstrip line (22) is matched with a load.

3. The microstrip bond wire transition structure for an automated micro-assembly production line of claim 1, wherein: The first stub (131) is a high-resistance stub, and the second stub (132) is a low-resistance stub.

4. The microstrip bond wire transition structure for an automated micro-assembly production line of claim 1, wherein: The first microstrip line (12) and the impedance matching structure (13) are closely arranged on the upper surface of the first dielectric substrate (11), and the lower surface of the first dielectric substrate (11) is covered with copper ground.

5. The microstrip bond wire transition structure for an automated micro-assembly production line of claim 1, wherein: Two rows of ground holes are arranged on the upper and lower sides of the first microstrip line (12) and the impedance matching structure (13).

6. The microstrip bond wire transition structure for an automated micro-assembly production line of claim 1, wherein: The materials of the first microstrip line (12), the impedance matching structure (13) and the second microstrip line (22) are all copper.

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