Multispectral imaging chip structure with wide free spectral range
By integrally depositing multiple spectral structures on the CMOS pixel photosensitive unit and employing a variable cavity FP filter and a cutoff filter film, the problems of difficulty in identifying targets with similar spectral information in RGB color images and material limitations are solved, realizing a multispectral imaging chip with a wide free spectral range, which has the advantages of high extinction ratio and low cost.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TIANJIN JINHANG INST OF TECH PHYSICS
- Filing Date
- 2021-10-18
- Publication Date
- 2026-06-16
AI Technical Summary
In existing technologies, the photosensitive three-spectral range of RGB color images is too wide, making it impossible to identify and distinguish targets with similar spectral information. Furthermore, semiconductor materials compatible with CMOS technology limit the free spectral range, failing to meet the coverage of the visible spectrum. Light leakage in the external spectral range affects imaging performance.
Multiple beam-splitting structures are integrally deposited on the same pixel photosensitive unit. A line-scan FP filter structure is adopted. Through the design of a graded cavity structure, Bragg mirrors of different materials (such as SiO2/Si3N4 and α-Si/SiO2) are stacked to cover different spectral ranges. A cutoff filter film is deposited on the beam-splitting unit to achieve narrowband filtering of 490-1000nm.
It breaks through the limitations of material refractive index difference, broadens the free spectral range of monolithic image sensors, achieves narrowband spectral characteristics with high extinction ratio, and does not require changes to the readout circuit and FPGA system. It has advantages in size and cost, realizing a true single-chip SoC.
Smart Images

Figure CN115993185B_ABST