Optical proximity correction method and system, mask, device and storage medium

Abstract

An optical proximity correction method and system, mask, device, and storage medium are disclosed. The correction method includes: providing a design layout including multiple design patterns; obtaining a grid-shaped initial boundary line corresponding to the design layout, wherein the initial boundary line passes through the design patterns and has at least two first intersections with the design patterns; obtaining segmentation points on the initial boundary line, wherein the segmentation points are located on both sides of the design patterns passed by the initial boundary line and have a preset distance from the first intersection of the design patterns passed by the initial boundary line; the initial boundary lines located between adjacent segmentation points and passing through the design patterns are used as first boundary lines, and the remaining initial boundary lines are used as second boundary lines; and forming third boundary lines outside the design patterns, wherein the third boundary lines alternately connect end to end with the second boundary lines through the segmentation points, and the third boundary lines and the second boundary lines constitute the target boundary line. The present invention is beneficial for reducing the probability of jumps caused by segmentation of the design patterns.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular to an optical proximity correction method and system, a mask, a device, and a storage medium. Background Art

[0002] In order to transfer the pattern from the mask to the silicon wafer surface, it is usually necessary to go through an exposure step, a development step after the exposure step, and an etching step after the development step. However, as the size of devices continues to shrink, the difference between the pattern on the chip surface and the original mask pattern also increases. In order to avoid the optical proximity effect causing the pattern on the chip to be inconsistent with the mask pattern, the current solution is usually to perform optical proximity correction (OPC) on the mask pattern, and then transfer the pattern based on the corrected mask pattern. In the OPC correction process, a mask size check (Mask Manufacturing Rule Check) is usually required to ensure the final pattern convergence and mask production accuracy.

[0003] However, since the area of ​​the layout is often very large, it is difficult to perform OPC correction processing on the entire layout at the same time. Therefore, it is necessary to divide the layout into multiple sub-areas, and perform OPC correction processing on each sub-area separately, and then splice the processed sub-areas into a layout.

[0004] However, splitting the layout often causes some problems that affect the OPC correction results. Summary of the Invention

[0005] The problem solved by the embodiments of the present invention is to provide an optical proximity correction method and system, a mask, a device and a storage medium to improve the correction accuracy of optical proximity correction.

[0006] To solve the above problems, an embodiment of the present invention provides an optical proximity correction method, comprising: providing a design layout, the design layout including multiple design graphics; obtaining a grid-shaped initial boundary line corresponding to the design layout, the grid-shaped initial boundary line passing through the design graphics, and the initial boundary line having at least two first intersections with the passed design graphics; obtaining split points on the initial boundary line, the split points being located on both sides of the design graphics passed by the initial boundary line and having a preset distance from the first intersection of the passed design graphics, the initial boundary lines located between adjacent split points and passing through the design graphics being used as first boundary lines, and the remaining initial boundary lines being used as second boundary lines; forming a third boundary line outside the design graphics, the third boundary line being alternately connected end to end with the second boundary line through the split points, the third boundary line and the second boundary line constituting a target boundary line, and the target boundary line dividing the design layout into multiple sub-areas.

[0007] Accordingly, an embodiment of the present invention also provides an optical proximity correction system, comprising: a graphic providing module for providing a design layout, wherein the design layout includes multiple design graphics; an initial boundary line acquisition module for acquiring a grid-shaped initial boundary line corresponding to the design layout, wherein the grid-shaped initial boundary line passes through the design graphics, and the initial boundary line has at least two first intersections with the passed design graphics; a segmentation point acquisition module for acquiring segmentation points on the initial boundary line, wherein the segmentation points are located on both sides of the design graphics passed by the initial boundary line and have a preset distance from the first intersection of the passed design graphics, the initial boundary lines located between adjacent segmentation points and passing through the design graphics are used as first boundary lines, and the remaining initial boundary lines are used as second boundary lines; a boundary generation module for forming a third boundary line outside the design graphics, wherein the third boundary line is alternately connected end to end with the second boundary line through the segmentation points, and the third boundary line and the second boundary line constitute a target boundary line, and the target boundary line divides the design layout into multiple sub-areas.

[0008] Correspondingly, an embodiment of the present invention further provides a mask, including a pattern obtained by using the optical proximity correction method provided by an embodiment of the present invention.

[0009] Accordingly, an embodiment of the present invention also provides a device comprising at least one memory and at least one processor, wherein the memory stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the optical proximity correction method provided in an embodiment of the present invention.

[0010] Correspondingly, an embodiment of the present invention further provides a storage medium, wherein the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the optical proximity correction method provided by the embodiment of the present invention.

[0011] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0012] In the optical proximity correction method provided by an embodiment of the present invention, a segmentation point is obtained on the initial boundary line, and the segmentation point is located on both sides of the design figure passed by the initial boundary line and has a preset distance from the first intersection point of the design figure passed by. The initial boundary line located between adjacent segmentation points and passing through the design figure is used as the first boundary line, and the remaining initial boundary lines are used as the second boundary line. A third boundary line is formed outside the design figure, and the third boundary line is alternately connected end to end with the second boundary line through the segmentation point. The third boundary line and the second boundary line constitute the target boundary line; in the embodiment of the present invention, the third boundary line is formed outside the design figure, which avoids the situation where the target boundary line divides the design figure as much as possible, so as to ensure the integrity of the design figure in each sub-area, thereby reducing the probability of the design figure jumping due to segmentation in the subsequent process of splicing the sub-areas, thereby facilitating more accurate splicing of the sub-areas, and further facilitating more accurate optical correction processing of the design figure.

[0013] In the optional solution, forming the third boundary line along the outline of the design figure is beneficial to reducing the probability of passing through other design figures when forming the third boundary line, and avoiding as much as possible the situation where the target boundary line divides the design figure, thereby facilitating more accurate splicing of the sub-areas in the subsequent process, and further facilitating more accurate optical correction processing of the design figure. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is a flow chart of an optical proximity correction method;

[0015] Figures 2 to 5 is a schematic diagram corresponding to each step in an optical proximity correction method;

[0016] Figure 6 is a flow chart of an embodiment of an optical proximity correction method of the present invention;

[0017] Figures 7 to 15 1 is a schematic diagram corresponding to each step in an embodiment of an optical proximity correction method of the present invention;

[0018] Figure 16 is a functional block diagram of an embodiment of an optical proximity correction system of the present invention;

[0019] Figure 17 It is a hardware structure diagram of an embodiment of the device provided by the present invention. DETAILED DESCRIPTION

[0020] At present, the correction accuracy of optical proximity correction needs to be improved. This paper analyzes the reasons why the correction accuracy of optical proximity correction needs to be improved by combining an optical proximity correction method.

[0021] Figure 1 This is a flow chart of an optical proximity correction method. Figures 2 to 5 , shows a schematic diagram corresponding to each step in the optical proximity correction method.

[0022] refer to Figure 2 , Figure 2 This is the schematic diagram corresponding to step s1. Execute step s1: Provide the design version Figure 10 , the design version Figure 10 A plurality of design graphics 11 are included.

[0023] refer to Figure 3 , Figure 3 This is the schematic diagram corresponding to step s2. Execute step s2: split the design board Figure 10 , forming a grid-like boundary line 20, the grid-like boundary line 20 Figure 10 It is divided into a plurality of sub-areas 21 .

[0024] Continue to refer Figure 3 , Figure 3 The diagram corresponding to step s3 is also included. Step s3 is executed: performing optical proximity correction processing on the design graphics 11 in each of the sub-areas 21 respectively.

[0025] Combined with reference Figure 4 , Figure 4 yes Figure 3 In the enlarged schematic diagram at the position of the dotted box, the boundary line 20 passes through the design graphic 11 and divides the design graphic 11 into two sub-graphics 12.

[0026] The boundary line 20 divides the design graphic 11 into two sub-graphics 12, destroying the integrity of the design graphic 11 in each sub-region 21. Therefore, in the step of performing optical proximity correction processing on the design graphic 11 in each sub-region 21, the design graphic 11 is divided into two sub-graphics 12 and optical proximity correction processing is performed separately, which easily leads to inconsistent processing results for the two sub-graphics 12. As a result, in the subsequent process of splicing the sub-regions 21, the design graphic 11 is prone to jumps due to the division, making it difficult to accurately splice the sub-regions 21, resulting in poor accuracy of the optical correction processing of the design graphic 11.

[0027] refer to Figure 5 , Figure 5 This is a schematic diagram corresponding to step s4 , step s4 : removing the boundary line 20 and splicing the sub-regions 21 .

[0028] In order to solve the above technical problems, an embodiment of the present invention provides an optical proximity correction method. Figure 6 , which shows a flow chart of an embodiment of the optical proximity correction method of the present invention.

[0029] In this embodiment, the optical proximity correction method includes the following basic steps:

[0030] Step S1: providing a design layout, wherein the design layout includes a plurality of design graphics;

[0031] Step S2: obtaining a grid-shaped initial boundary line corresponding to the design layout, wherein the grid-shaped initial boundary line passes through the design pattern, and the initial boundary line has at least two first intersections with the design pattern it passes through;

[0032] Step S3: Obtaining segmentation points on the initial boundary line, wherein the segmentation points are located on both sides of the design figure through which the initial boundary line passes and are at a preset distance from the first intersection point of the design figure through which the initial boundary line passes. The initial boundary line located between adjacent segmentation points and passing through the design figure is used as the first boundary line, and the remaining initial boundary lines are used as the second boundary lines.

[0033] Step S4: forming a third boundary line outside the design pattern, the third boundary line alternately connected to the second boundary line end to end through the dividing point, the third boundary line and the second boundary line constitute a target boundary line, and the target boundary line divides the design layout into multiple sub-areas.

[0034] In an embodiment of the present invention, a third boundary line is formed outside the design graphic, which avoids the situation where the target boundary line divides the design graphic as much as possible, so as to ensure the integrity of the design graphic in each sub-area. In the subsequent process of splicing the sub-areas, it is beneficial to reduce the probability of the design graphic jumping due to being divided, thereby facilitating more accurate splicing of the sub-areas, and further facilitating more accurate optical correction processing of the design graphic.

[0035] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0036] Figures 7 to 15 1 is a schematic diagram corresponding to each step in an embodiment of the optical proximity correction method of the present invention.

[0037] refer to Figure 7 , Figure 7 1 is a schematic diagram corresponding to step S1 . Step S1 is performed: providing a design layout 100 , wherein the design layout 100 includes a plurality of design graphics 110 .

[0038] The design pattern 110 is a target pattern to be transferred onto a wafer. After optical proximity correction is performed on the design pattern 110 , the obtained pattern is used to make a mask, which is then used to perform a photolithography process to form a corresponding mask pattern on the wafer.

[0039] In this embodiment, the design layout 100 is a hole pattern layout, and the design pattern 110 in the hole pattern layout is a hole pattern.

[0040] In this embodiment, the hole pattern includes a contact hole pattern or an interconnection through hole pattern.

[0041] The contact hole pattern is used to form a contact hole on a wafer, and the contact hole is used to form a contact hole plug. The interconnection through-hole pattern is used to form an interconnection through-hole on a wafer, and the interconnection through-hole is used to form an interconnection through-hole structure. Usually, the contact hole pattern or the interconnection through-hole pattern is large in number and dense in a layout layer. Therefore, the area of ​​the hole-shaped layout is large, and the design layout 100 needs to be divided subsequently, and then optical proximity correction processing is performed.

[0042] In this embodiment, the hole pattern is square.

[0043] Subsequently, a third boundary line needs to be formed along the outline of the design pattern 110. The hole pattern is square, which is conducive to forming a third boundary line with a regular shape, and the change to the initial boundary line will not be too large.

[0044] Combined with reference Figure 8 and Figure 9 , Figure 8 is the schematic diagram corresponding to step S2, Figure 9 yes Figure 8 In the enlarged schematic diagram at the position of the dotted box, step S2 is executed: obtaining a grid-shaped initial boundary line 200 corresponding to the design layout 100, the grid-shaped initial boundary line 200 passes through the design graphic 110, and the initial boundary line 200 has at least two first intersections 400 with the design graphic 110 it passes through.

[0045] Subsequently, the initial boundary line 200 is modified to form a target boundary line, thereby forming a sub-region defined by the target boundary line.

[0046] Since the area of ​​the design layout 100 is usually large, the design layout 100 is divided into multiple sub-areas surrounded by the initial boundary line 200. The optical proximity correction processing is performed on each sub-area separately, and then the processed sub-areas are spliced ​​together to achieve the optical proximity correction processing of the design layout 100. This helps to avoid the time-consuming optical proximity correction processing of a large area, thereby saving the processing time of the optical proximity correction processing.

[0047] It should be noted that the design graphics 110 in the design layout 100 are usually large in number and relatively dense, so the initial boundary line 200 usually inevitably passes through the design graphics 110. When the initial boundary line 200 passes through the design graphics 110, the initial boundary line 200 and the design graphics 110 have two first intersections 400.

[0048] refer to Figure 10 , Figure 10 It is a schematic diagram corresponding to step S3. Step S3 is executed to obtain a division point 410 on the initial boundary line 200. The division point 410 is located on both sides of the design graphic 110 through which the initial boundary line 200 passes, and has a preset distance d from the first intersection 400 of the passed design graphic 110. The initial boundary line 200 located between adjacent division points 410 and passing through the design graphic 110 is used as the first boundary line 210, and the remaining initial boundary lines 200 are used as the second boundary line 220.

[0049] The segmentation point 410 is used as a connection point between a third boundary line formed subsequently and the second boundary line 220 , thereby forming a target boundary line.

[0050] The dividing point 410 has a preset distance d from the first intersection 400 of the corresponding design graphic 110. The preset distance d is established based on the shape and size of the design graphic 110 and the distribution of the design graphic 110 in the design layout 100, so that the dividing point 410 has an appropriate distance from the first intersection 400, so that the third boundary line formed subsequently can have a corresponding appropriate distance from the outline of the design graphic 110.

[0051] It should be noted that obtaining the dividing points 410 on the initial boundary line 200, which are located on both sides of the design figure 110 and have a preset distance d with the first intersection point 400 of the corresponding design figure 110, means that the dividing points 410 are located on both sides of the design figure 110, and each dividing point 410 has a preset distance d with the two first intersection points 400 of the corresponding design figure 110.

[0052] It should also be noted that the preset distance d should not be too large or too small. If the preset distance d is too large, the distance between the subsequently formed third boundary line and the outline of the design pattern 110 is too large. As a result, although the third boundary line does not divide the corresponding design pattern 110, it increases the probability that the third boundary line divides other design patterns 110 surrounding the design pattern 110, affecting the integrity of the other design patterns 110, thereby causing other design patterns 110 to jump during the subsequent splicing process, affecting the accuracy of the subsequent splicing of the sub-regions. If the preset distance d is too small, the distance between the subsequently formed third boundary line and the outline of the design pattern 110 is too small, resulting in the third boundary line and the outline of the design pattern 110 being easily aligned due to the small distance. In the subsequent optical proximity correction processing of the sub-region, the outline of the design pattern 110 is easily missed due to the close proximity between the outline of the design pattern 110 and the boundary of the sub-region, thereby affecting the accuracy of the optical proximity correction processing. To this end, the preset distance d is 3 nm to 5 nm.

[0053] Specifically, the step of obtaining the segmentation point 410 on the initial boundary line 200 includes: performing expansion processing on the design graphic 110 so that each edge of the design graphic 110 is equidistantly translated toward the outside of the design graphic 110 to form an expanded graphic 120, wherein the distance of the equidistant translation is the preset distance d.

[0054] The expanded graphic 120 is formed to obtain the second intersection of the expanded graphic 120 and the initial boundary line 200 as a dividing point. The expanded graphic 120 is formed by equidistantly translating each edge of the design graphic 110 toward the outside of the design graphic 110. The expanded graphic 120 includes the design graphic 110 inside, so that a third boundary line that does not pass through the design graphic 110 can be formed based on the outline of the expanded graphic 120. This is beneficial to ensuring the integrity of the design graphic 110 in each of the sub-areas formed subsequently.

[0055] Accordingly, the expansion process of the design graphic 110 further includes: the expanded graphic includes two sub-graphics 130 divided by the initial boundary line 200 .

[0056] In this embodiment, after the expanded graphic 120 is formed, and before the second intersection point of the expanded graphic 120 and the initial boundary line 200 is subsequently obtained, the process further includes: determining whether adjacent expanded graphics 120 overlap, and if adjacent expanded graphics 120 overlap, removing the outlines of the overlapping portions of the adjacent expanded graphics 120.

[0057] In the design layout 100, when the distance between adjacent design graphics 100 is too small, the expanded graphics 120 formed will overlap with each other. By removing the outlines of the overlapping portions of the adjacent expanded graphics 120 and merging the overlapping adjacent expanded graphics 120, the adjacent expanded graphics 120 are made concise and clear, thereby simplifying the subsequent process of forming a third boundary line based on the outline of the expanded graphics 120. Moreover, when adjacent expanded graphics 120 overlap with each other, it is easy for one of the expanded graphics 120 to enter the interior of another expanded graphic 120 and pass through the interior of the design graphic 110. Therefore, removing the outlines of the overlapping portions of the adjacent expanded graphics 120 can also avoid the design graphic 110 from being accidentally divided.

[0058] Continue to refer Figure 10 , obtaining a second intersection 420 of the expanded graphic 120 and the initial boundary line 200 as the segmentation point 410 .

[0059] By forming the expanded pattern 120 to obtain the division points 410, the distribution of the division points 410 can be adapted to the shapes of different design patterns 110, and the positions of the division points 410 can be uniformly and relatively evenly obtained according to the distribution of the design pattern 110. Moreover, by forming one expanded pattern 120, two corresponding division points 410 can be obtained on both sides of the design pattern 110, which is beneficial to improving operational efficiency.

[0060] refer to Figure 11 , the optical proximity correction method further includes: removing the first boundary line 210.

[0061] Removing the first boundary line 210 makes the second boundary line 220 clearer and easier to identify, which is beneficial for subsequently forming a target boundary line using the second boundary line 220 .

[0062] In other embodiments, the first boundary line may be removed after the target boundary line is subsequently formed. In other embodiments, the first boundary line may not be removed.

[0063] refer to Figure 12 , Figure 12 This is a schematic diagram corresponding to step S4. Step S4 is executed to form a third boundary line 230 outside the design graphic 110. The third boundary line 230 is alternately connected end to end with the second boundary line 220 through the dividing point 410. The third boundary line 230 and the second boundary line 220 constitute a target boundary line 240. The target boundary line 240 divides the design layout 100 into multiple sub-areas 310.

[0064] In this embodiment, a third boundary line 230 is formed outside the design graphic 110, thereby avoiding as much as possible the situation where the target boundary line 240 divides the design graphic 110, thereby ensuring the integrity of the design graphic 110 in each subsequent sub-region. In the subsequent process of splicing the various sub-regions 310, it is helpful to reduce the probability of the design graphic 110 causing a jump phenomenon due to being divided, thereby facilitating more accurate splicing of the sub-regions 310, and further facilitating more accurate optical correction processing of the design graphic 110.

[0065] In this embodiment, in the step of forming the third boundary line 230 outside the design pattern 110 , the third boundary line 230 is formed along the outline of the design pattern 110 .

[0066] Forming the third boundary line 230 along the outline of the design graphic 110 is beneficial to reducing the probability of passing through other design graphics 110 when forming the third boundary line 230, and avoiding as much as possible the situation where the target boundary line 240 divides the design graphic 110, thereby facilitating more accurate splicing of the sub-areas 310 in the subsequent process, and further facilitating more accurate optical correction processing of the design graphic 110.

[0067] Specifically, refer to Figure 12 The forming of the third boundary line 230 outside the design pattern 110 includes: following the outline of the expanded pattern 120 on either side of the initial boundary line 200 to form the third boundary line 230 that coincides with the outline.

[0068] The expanded graphic 120 is formed by equidistantly translating each edge of the design graphic 110 toward the outside of the design graphic 110. The expanded graphic 120 includes the design graphic 110 inside, thereby forming a third boundary line 230 that coincides with the outline of the expanded graphic 120 on either side of the initial boundary line 200. This is beneficial to ensure that the third boundary line 230 does not pass through the design graphic 110, thereby ensuring the integrity of the design graphic 110 in each of the subsequently formed sub-areas 310. Moreover, after the expanded graphic 120 is formed, the third boundary line 230 is formed along the outline of the expanded graphic 120. This is simple and easy to operate, and there is no need to add the operation of setting the formation position of the third boundary line 230, which is highly efficient.

[0069] Specifically, the outline of any one of the two sub-graphs 130 divided along the expanded graph 120 forms the third boundary line 230 .

[0070] In this embodiment, a third boundary line 230 is formed along the outline of the sub-graph 130 with a smaller area among the two sub-graphs 130 , and coincides with the outline.

[0071] A third boundary line 230 is formed along the outline of the sub-graph 130 with a smaller area among the two sub-graphs 130, which coincides with the outline. The third boundary line 230 formed is less changed relative to the initial boundary line 200, which is beneficial to improving the compatibility of the third boundary line 230. Moreover, by forming the third boundary line 230 along the outline of the sub-graph 130 with a smaller area among the two sub-graphs 130, the design graphic 110 can be assigned to the sub-region 310 of the design graphic 110 with a larger area, and the graphic change of the sub-region 310 is also smaller, which is beneficial to improving the compatibility of the sub-region 310.

[0072] refer to Figure 13 After the third boundary line 230 is formed outside the design pattern 110, the method further includes: when the minimum spacing t between adjacent third boundary lines 230 located on the same side of the second boundary line 220 is less than or equal to a preset size, the adjacent third boundary lines 230 are used as the boundary lines to be processed 250.

[0073] When the minimum spacing t between the third boundary lines 230 located on the same side of the second boundary line 220 and adjacent to each other is less than or equal to the preset size, there are relatively close parts between the third boundary lines 230 located on the same side of the second boundary line 220 and adjacent to each other, which may easily cause the target boundary line 240 to be formed to be more cumbersome and complicated. Subsequently, the target boundary line 240 is made simpler and clearer by processing the boundary line 250 to be processed.

[0074] It should be noted that the preset size should not be too large or too small. If the preset size is too large, then when the minimum spacing t between adjacent third boundary lines 230 located on the same side of the second boundary line 220 is large, the adjacent third boundary line 230 will also be treated as the boundary line 250 to be processed, and unnecessary trimming will be performed later, which may easily waste computational costs. If the preset size is too small, then when the minimum spacing t between adjacent third boundary lines 230 located on the same side of the second boundary line 220 is small, the adjacent third boundary line 230 will not be treated as the boundary line 250 to be processed, and necessary operations on the third boundary line 230 may be omitted, affecting the division of the sub-region 310 and thus the operation of the optical proximity correction. To this end, in this embodiment, the preset size is 20nm to 30nm.

[0075] In this embodiment, among the boundary lines to be processed 250 , the edges having the maximum vertical distance w to the second boundary line 220 are respectively selected as reference edges 231 , and the reference edges 231 are used as candidate edges for subsequently connecting adjacent third boundary lines 230 .

[0076] In this embodiment, the vertical distance w from the reference edge 231 to the second boundary line 220 is compared, and the boundary line 250 to be processed corresponding to the reference edge 231 with the smaller vertical distance w is used as the first boundary line to be processed 260, and the other boundary line to be processed 250 is used as the second boundary line to be processed 270.

[0077] It should be noted that when the vertical distance w from the reference side 231 of the boundary lines 250 to be processed to the second boundary line 220 is equal, any one boundary line 250 to be processed is used as the first boundary line 260 to be processed, and the other boundary line 250 to be processed is used as the second boundary line 270 to be processed.

[0078] refer to Figure 14 , extend the reference side 231 of the first boundary line to be processed 260 toward the second boundary line to be processed 270 until it contacts the second boundary line to be processed 270, and the second boundary line to be processed 270, the first boundary line to be processed 260 and the second boundary line 220 form a closed figure (such as Figure 14 (shown as the filled part in the diagonal lines).

[0079] Extending the reference edge 231 of the first boundary line 260 to be processed toward the second boundary line 270 to be processed until it contacts the second boundary line 270 can minimize the range through which the reference edge 231 is extended while making the adjacent boundary lines 250 to be processed contact, thereby reducing the probability of the reference edge 231 extending through other design graphics 110, which is beneficial to ensuring the integrity of the design graphics 110.

[0080] refer to Figure 15 , removing the remaining contour lines other than the reference edge 231 of the first boundary line 260 to be processed in the closed figure to obtain the target boundary line 240.

[0081] The target boundary line 240 is concise and clear, and avoids unnecessary segmentation of the design layout 100 by redundant contour lines.

[0082] In this embodiment, after the target boundary line 240 divides the design layout 100 into a plurality of sub-regions 310 , the optical proximity correction method further includes: performing optical proximity correction processing on the design pattern 110 in each of the sub-regions 310 .

[0083] In this embodiment, the target boundary line 240 is formed to avoid dividing the design pattern 110 as much as possible, thereby ensuring the integrity of the design pattern 110 in each sub-region 310, which is conducive to making the optical correction processing of the design pattern 110 more accurate.

[0084] After optical proximity correction is performed on the pattern to be tested 110 , the obtained pattern is used to make a mask, and then a photolithography process is performed using the mask to form a corresponding mask pattern on a wafer.

[0085] In this embodiment, after performing optical proximity correction processing on the design graphics 110 in each of the sub-regions 310 , the optical proximity correction method further includes: removing the target boundary line 240 and splicing the sub-regions 310 .

[0086] In this embodiment, the target boundary line 240 formed avoids dividing the design graphic 100 as much as possible to ensure the integrity of the design graphic 110 in each sub-region 310, thereby reducing the probability of the design graphic 110 jumping due to being divided during the process of splicing the sub-regions 310, thereby facilitating more accurate splicing of the sub-regions 310.

[0087] Correspondingly, the present invention also provides an optical proximity correction system. Figure 16 FIG. 4 is a functional block diagram of an optical proximity correction system according to an embodiment of the present invention.

[0088] In this embodiment, the optical proximity correction system 50 includes: a graphic providing module 501 for providing a design layout, wherein the design layout includes multiple design graphics; an initial boundary line acquisition module 502 for acquiring a grid of initial boundary lines corresponding to the design layout, wherein the grid-shaped initial boundary lines pass through the design graphics and have at least two first intersections with the passed design graphics; a segmentation point acquisition module 503 for acquiring segmentation points on the initial boundary lines, wherein the segmentation points are located on both sides of the design graphics passed by the initial boundary line and have a preset distance from the first intersection of the passed design graphics, the initial boundary lines located between adjacent segmentation points and passing through the design graphics are used as first boundary lines, and the remaining initial boundary lines are used as second boundary lines; a boundary generation module 504 for forming a third boundary line outside the design graphics, wherein the third boundary line alternately connects end to end with the second boundary line through the segmentation points, and the third boundary line and the second boundary line constitute a target boundary line, and the target boundary line divides the design layout into multiple sub-areas.

[0089] The graphic providing module 501 is used to provide a design layout, where the design layout includes a plurality of design graphics.

[0090] The design pattern is a target pattern transferred to the wafer. After optical proximity correction is performed on the design pattern, the obtained pattern is used to make a mask, and then a photolithography process is performed using the mask to form a corresponding mask pattern on the wafer.

[0091] In this embodiment, the design layout is a hole pattern layout, and the design pattern in the hole pattern layout is a hole pattern.

[0092] In this embodiment, the hole pattern includes a contact hole pattern or an interconnection through-hole pattern.

[0093] The contact hole pattern is used to form a contact hole on a wafer, and the contact hole is used to form a contact hole plug. The interconnection through-hole pattern is used to form an interconnection through-hole on a wafer, and the interconnection through-hole is used to form an interconnection through-hole structure. Usually, the contact hole pattern or the interconnection through-hole pattern is large in number and dense in the layout layer. Therefore, the area of ​​the hole-shaped layout is large, and the design layout needs to be divided subsequently, and then optical proximity correction processing is performed.

[0094] In this embodiment, the hole pattern is square.

[0095] Subsequently, a third boundary line needs to be formed along the outline of the design pattern. The hole pattern is square, which is conducive to forming a third boundary line with a regular shape, and the change to the initial boundary line will not be too large.

[0096] The initial boundary line acquisition module 502 is configured to acquire a grid of initial boundary lines corresponding to the design layout, wherein the grid of initial boundary lines passes through the design graphic, and the initial boundary lines have at least two first intersections with the design graphic they pass through.

[0097] Subsequently, the initial boundary line is modified to form a target boundary line, thereby forming a sub-region defined by the target boundary line.

[0098] Since the area of ​​the design layout is usually large, the design layout is divided into multiple sub-areas surrounded by the initial boundary lines. The optical proximity correction processing is performed on each sub-area separately, and then the processed sub-areas are spliced ​​together to achieve the optical proximity correction processing of the design layout. This helps to avoid the time-consuming optical proximity correction processing on a large area, thereby saving the processing time of the optical proximity correction processing.

[0099] It should be noted that the design graphics in the design layout are usually large in number and relatively dense, so the initial boundary line usually inevitably passes through the design graphics. When the initial boundary line passes through the design graphics, the initial boundary line and the design graphics have two first intersections.

[0100] The segmentation point acquisition module 503 is used to obtain segmentation points on the initial boundary line. The segmentation points are located on both sides of the design figure through which the initial boundary line passes, and have a preset distance d with the first intersection of the design figure through which the initial boundary line passes. The initial boundary line located between adjacent segmentation points and passing through the design figure is used as the first boundary line, and the remaining initial boundary lines are used as the second boundary lines.

[0101] The segmentation point is used as a connection point between a third boundary line formed subsequently and the second boundary line, thereby forming a target boundary line.

[0102] The dividing point has a preset distance d from the first intersection of the corresponding design figure. The preset distance d is established based on the shape and size of the design figure and the distribution of the design figure in the design layout so that the dividing point has an appropriate distance from the first intersection, thereby enabling the subsequently formed third boundary line to have a corresponding appropriate distance from the outline of the design figure.

[0103] It should be noted that obtaining the dividing points on the initial boundary line that are located on both sides of the design figure and have a preset distance d with the first intersection point of the corresponding design figure means that the dividing points are located on both sides of the design figure and each dividing point has a preset distance d with the adjacent first intersection point in the corresponding design figure.

[0104] It should also be noted that the preset distance d should not be too large or too small. If the preset distance d is too large, the distance between the subsequently formed third boundary line and the outline of the design pattern will be too large. As a result, although the third boundary line does not divide the corresponding design pattern, it increases the probability that the third boundary line will divide other design patterns surrounding the design pattern, affecting the integrity of other design patterns, causing other design patterns to jump during the subsequent splicing process, affecting the accuracy of the subsequent splicing of the sub-regions. If the preset distance d is too small, the distance between the subsequently formed third boundary line and the outline of the design pattern will be too small, causing the third boundary line and the outline of the design pattern to easily fit together due to the small distance. In the subsequent optical proximity correction processing of the sub-region, the outline of the design pattern is too close to the boundary of the sub-region, which may easily lead to the outline of the design pattern being missed, thereby affecting the accuracy of the optical proximity correction processing. To this end, the preset distance d is 3nm to 5nm.

[0105] Specifically, the segmentation point acquisition module 503 includes: an expansion graphic unit for expanding the design graphic so that each edge of the design graphic is equidistantly translated toward the outside of the design graphic to form an expanded graphic, wherein the equidistant translation distance is the preset distance d.

[0106] The expanded graphic is formed to obtain the second intersection of the expanded graphic and the initial boundary line as a dividing point. The expanded graphic is formed by equidistantly translating each edge of the design graphic toward the outside of the design graphic. The expanded graphic includes the design graphic inside, so that a third boundary line that does not pass through the design graphic can be formed based on the outline of the expanded graphic, which is beneficial to ensuring the integrity of the design graphic in each of the sub-areas formed subsequently.

[0107] Correspondingly, the step of performing expansion processing on the design graphic further includes: the expanded graphic includes two sub-graphics divided by the initial boundary line.

[0108] In this embodiment, after the expanded graphic is formed, before subsequently obtaining the second intersection point of the expanded graphic and the initial boundary line, it also includes: determining whether adjacent expanded graphics overlap, and if adjacent expanded graphics overlap, removing the contour lines of the overlapping parts of the adjacent expanded graphics.

[0109] In the design layout, when the distance between adjacent design graphics is too small, the expanded graphics formed will overlap with each other. The contour lines of the overlapping parts of the adjacent expanded graphics are removed, and the overlapping adjacent expanded graphics are merged, so that the adjacent expanded graphics are concise and clear, thereby simplifying the subsequent process of forming a third boundary line based on the contour of the expanded graphics. Moreover, when adjacent expanded graphics overlap with each other, it is easy for one of the expanded graphics to enter the interior of another expanded graphic and pass through the interior of the design graphic. Therefore, removing the contour lines of the overlapping parts of the adjacent expanded graphics can also avoid the situation of mistakenly dividing the design graphic.

[0110] The segmentation point acquisition module 503 further includes: a point selection unit configured to acquire a second intersection point between the expanded graphic and the initial boundary line as the segmentation point.

[0111] By forming the expanded pattern to obtain the division points, the distribution of the division points can be adapted to the shapes of different design patterns, and the positions of the division points can be obtained uniformly and relatively evenly according to the distribution of the design patterns. Moreover, by forming one expanded pattern, two corresponding division points on both sides of the design pattern can be obtained, which is conducive to improving operational efficiency.

[0112] The optical proximity correction system further includes a boundary removal module configured to remove the first boundary line.

[0113] Removing the first boundary line makes the second boundary line clearer and easier to identify, which is beneficial for subsequently using the second boundary line to form a target boundary line.

[0114] In other embodiments, the boundary removal module may be further configured to remove the first boundary line after a target boundary line is subsequently formed. In other embodiments, the optical proximity correction system may not include the boundary removal module.

[0115] The boundary generation module 504 is used to form a third boundary line outside the design pattern, wherein the third boundary line is alternately connected to the second boundary line end to end through the segmentation point, and the third boundary line and the second boundary line constitute a target boundary line, and the target boundary line divides the design layout into multiple sub-areas.

[0116] In this embodiment, a third boundary line is formed outside the design pattern, which avoids the situation where the target boundary line divides the design pattern as much as possible, so as to ensure the integrity of the design pattern in each subsequent sub-area. In the subsequent process of splicing the sub-areas, it is helpful to reduce the probability of the design pattern jumping due to being divided, thereby facilitating more accurate splicing of the sub-areas, and further facilitating more accurate optical correction processing of the design pattern.

[0117] In this embodiment, the boundary generation module 505 is further configured to form the third boundary line along the outline of the design graphic.

[0118] Forming the third boundary line along the outline of the design figure is beneficial to reducing the probability of passing through other design figures when forming the third boundary line, and avoiding as much as possible the situation where the target boundary line divides the design figure, thereby facilitating more accurate splicing of the sub-areas in the subsequent process, and further facilitating more accurate optical correction processing of the design figure.

[0119] Specifically, the boundary generation module 505 is configured to form a third boundary line that coincides with the outline of the expanded graphic along either side of the initial boundary line.

[0120] The expanded graphic is formed by equidistantly translating each edge of the design graphic toward the outside of the design graphic. The expanded graphic includes the design graphic inside, thereby forming a third boundary line that coincides with the outline of the expanded graphic on either side of the initial boundary line. This is beneficial to ensure that the third boundary line does not pass through the design graphic, thereby ensuring the integrity of the design graphic in each of the subsequently formed sub-areas. Moreover, after the expanded graphic is formed, the third boundary line is formed along the outline of the expanded graphic, which is simple and easy to operate, and there is no need to add the operation of setting the formation position of the third boundary line, so the efficiency is high.

[0121] Specifically, the outline of any one of the two sub-graphs divided along the expanded graph forms the third boundary line.

[0122] In this embodiment, a third boundary line is formed along the outline of the sub-graphic with the smaller area among the two sub-graphics and coincides with the outline.

[0123] A third boundary line that coincides with the outline of the sub-graph with the smaller area among the two sub-graphs is formed along the outline of the sub-graph. Then, the third boundary line formed has a smaller change relative to the initial boundary line, which is beneficial to improving the compatibility of the third boundary line. Moreover, by forming the third boundary line along the outline of the sub-graph with the smaller area among the two sub-graphs, the design graphic is classified into the sub-region of the design graphic with the larger area, and the graphic change of the sub-region is also smaller, which is beneficial to improving the compatibility of the sub-region.

[0124] The optical proximity correction system further includes: after forming a third boundary line outside the design pattern, when the minimum spacing t between adjacent third boundary lines located on the same side of the second boundary line is less than or equal to a preset size, the adjacent third boundary line is used as a boundary line to be processed.

[0125] When the minimum spacing t between the third boundary lines located on the same side of the second boundary line and adjacent to each other is less than or equal to the preset size, there are relatively close parts between the third boundary lines located on the same side of the second boundary line and adjacent to each other, which may easily cause the target boundary line to be formed to be more cumbersome and complicated. Subsequently, the target boundary line is made simpler and clearer by processing the boundary line to be processed.

[0126] It should be noted that the preset size should not be too large or too small. If the preset size is too large, then when the minimum spacing t between adjacent third boundary lines on the same side of the second boundary line is large, the adjacent third boundary line will also be treated as a boundary line to be processed, and unnecessary trimming will be performed later, which can easily waste computational costs. If the preset size is too small, then when the minimum spacing t between adjacent third boundary lines on the same side of the second boundary line is small, the adjacent third boundary line will not be treated as a boundary line to be processed, which can easily omit necessary operations on the third boundary line, affecting the division of the sub-regions and thus the operation of the optical proximity correction. To this end, in this embodiment, the preset size is 20nm to 30nm.

[0127] In this embodiment, among the boundary lines to be processed, the edges having the maximum vertical distance w to the second boundary line are respectively selected as reference edges, and the reference edges are used as candidate edges for subsequently connecting adjacent third boundary lines.

[0128] In this embodiment, the vertical distance w from the reference side to the second boundary line is compared, and the boundary line to be processed corresponding to the reference side with the smaller vertical distance w is used as the first boundary line to be processed, and the other boundary line to be processed is used as the second boundary line to be processed.

[0129] It should be noted that when the vertical distances w from the reference sides of the boundary lines to be processed to the second boundary line are equal, any one boundary line to be processed is used as the first boundary line to be processed, and the other boundary line to be processed is used as the second boundary line to be processed.

[0130] The optical proximity correction system further includes: extending the reference edge of the first boundary line to be processed toward the second boundary line to be processed until it contacts the second boundary line to be processed, and the second boundary line to be processed, the first boundary line to be processed, and the second boundary line form a closed figure.

[0131] Extending the reference edge of the first boundary line to be processed toward the second boundary line to be processed until it contacts the second boundary line to be processed can minimize the range through which the reference edge is extended while making adjacent boundary lines to be processed contact, thereby reducing the probability of the reference edge extending through other design figures, which is beneficial to ensuring the integrity of the design figures.

[0132] The optical proximity correction system further includes: removing the remaining contour lines of the closed figure except the reference edge of the first boundary line to be processed to obtain a target boundary line.

[0133] The target boundary line is concise and clear, and avoids unnecessary segmentation of the design layout by redundant contour lines.

[0134] In this embodiment, after the target boundary line divides the design layout into a plurality of sub-regions, the optical proximity correction method further includes: performing optical proximity correction processing on the design pattern in each of the sub-regions respectively.

[0135] In this embodiment, the target boundary line is formed in a manner that avoids segmenting the design pattern as much as possible, thereby ensuring the integrity of the design pattern in each sub-region, and facilitating more accurate optical correction processing of the design pattern.

[0136] After optical proximity correction is performed on the pattern to be tested, the obtained pattern is used to make a mask, and then a photolithography process is performed using the mask to form a corresponding mask pattern on a wafer.

[0137] In this embodiment, the optical proximity correction system further comprises: after performing optical proximity correction processing on the design pattern in each of the sub-areas, removing the target boundary line and splicing the sub-areas.

[0138] In this embodiment, the target boundary line formed avoids dividing the design graphic 100 as much as possible to ensure the integrity of the design graphic in each sub-area, thereby reducing the probability of the design graphic jumping due to being divided during the process of splicing the sub-areas, thereby facilitating more accurate splicing of the sub-areas.

[0139] Correspondingly, the present invention further provides a mask, comprising: a pattern obtained by using the optical proximity correction method provided by an embodiment of the present invention.

[0140] It can be seen from the foregoing embodiments that in the optical proximity correction method provided by the embodiments of the present invention, a segmentation point is obtained on the initial boundary line, the segmentation point is located on both sides of the design figure passed by the initial boundary line, and has a preset distance from the first intersection point of the design figure passed by, the initial boundary line located between adjacent segmentation points and passing through the design figure is used as the first boundary line, the remaining initial boundary lines are used as the second boundary line, and a third boundary line is formed outside the design figure, the third boundary line is alternately connected to the second boundary line end to end through the segmentation point, and the third boundary line and the second boundary line constitute the target boundary line; in the embodiment of the present invention, the third boundary line is formed outside the design figure, which avoids the situation where the target boundary line divides the design figure as much as possible, so as to ensure the integrity of the design figure in each sub-area, thereby reducing the probability of the design figure jumping due to segmentation in the subsequent process of splicing the sub-areas, thereby facilitating more accurate splicing of the sub-areas, and further facilitating more accurate optical correction processing of the design figure.

[0141] The embodiment of the present invention further provides a device that can implement the optical proximity correction method provided by the embodiment of the present invention by loading the above optical proximity correction method in the form of a program. An optional hardware structure of the terminal device provided by the embodiment of the present invention can be as follows Figure 17 As shown, it includes: at least one processor 01, at least one communication interface 02, at least one memory 03 and at least one communication bus 04.

[0142] In this embodiment, the number of processor 01, communication interface 02, memory 03, and communication bus 04 is at least one, and the processor 01, communication interface 02, and memory 03 communicate with each other via the communication bus 04. The communication interface 02 can be an interface of a communication module for network communication, such as an interface of a GSM module. The processor 01 can be a central processing unit (CPU), or an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present invention. The memory 03 can include a high-speed RAM memory, or can also include a non-volatile memory (NVM), such as at least one disk storage. The memory 03 stores one or more computer instructions, which are executed by the processor 01 to implement the optical proximity correction method provided in the embodiments of the present invention.

[0143] It should be noted that the above-mentioned terminal device may also include other devices (not shown) that may not be necessary for understanding the contents disclosed in the embodiments of the present invention; given that these other devices may not be necessary for understanding the contents disclosed in the embodiments of the present invention, the embodiments of the present invention will not introduce them one by one.

[0144] An embodiment of the present invention further provides a storage medium storing one or more computer instructions, wherein the one or more computer instructions are used to implement the optical proximity correction method provided by the embodiment of the present invention.

[0145] In the optical proximity correction method provided by an embodiment of the present invention, a segmentation point is obtained on the initial boundary line, and the segmentation point is located on both sides of the design figure passed by the initial boundary line and has a preset distance from the first intersection point of the design figure passed by. The initial boundary line located between adjacent segmentation points and passing through the design figure is used as the first boundary line, and the remaining initial boundary lines are used as the second boundary line. A third boundary line is formed outside the design figure, and the third boundary line is alternately connected end to end with the second boundary line through the segmentation point. The third boundary line and the second boundary line constitute the target boundary line; in the embodiment of the present invention, the third boundary line is formed outside the design figure, which avoids the situation where the target boundary line divides the design figure as much as possible, so as to ensure the integrity of the design figure in each sub-area, thereby reducing the probability of the design figure jumping due to segmentation in the subsequent process of splicing the sub-areas, thereby facilitating more accurate splicing of the sub-areas, and further facilitating more accurate optical correction processing of the design figure.

[0146] The embodiments of the present invention described above are combinations of elements and features of the present invention. Unless otherwise mentioned, the elements or features may be considered as optional. Each element or feature may be put into practice without being combined with other elements or features. In addition, the embodiments of the present invention may be constructed by combining some elements and / or features. The order of operations described in the embodiments of the present invention may be rearranged. Some configurations of any one embodiment may be included in another embodiment and may be replaced by the corresponding configuration of another embodiment. It is obvious to those skilled in the art that claims that do not have a clear reference relationship to each other in the appended claims may be combined into embodiments of the present invention, or may be included as new claims in amendments after submitting this application.

[0147] The embodiments of the present invention can be implemented by various means such as hardware, firmware, software or a combination thereof. In a hardware configuration, the method according to the exemplary embodiment of the present invention can be implemented by one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, etc. In a firmware or software configuration, the embodiments of the present invention can be implemented in the form of modules, processes, functions, etc. The software code can be stored in a memory unit and executed by a processor. The memory unit is located inside or outside the processor and can send data to the processor and receive data from the processor via various known means.

[0148] The above description of the disclosed embodiments will enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein, but is to be construed in the widest possible manner consistent with the principles and novel features disclosed herein.

[0149] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. An optical proximity correction method, characterized in that: include: Providing a design layout, wherein the design layout includes a plurality of design graphics; Acquire a grid-shaped initial boundary line corresponding to the design layout, wherein the grid-shaped initial boundary line passes through the design pattern, and the initial boundary line has at least two first intersections with the design pattern passed through; Obtaining segmentation points on the initial boundary line, the segmentation points being located on both sides of the design figure through which the initial boundary line passes and having a preset distance from the first intersection of the design figure through which the initial boundary line passes, the initial boundary line located between adjacent segmentation points and passing through the design figure being used as the first boundary line, and the remaining initial boundary lines being used as the second boundary line; A third boundary line is formed outside the design pattern, the third boundary line is alternately connected end to end with the second boundary line through the dividing point, the third boundary line and the second boundary line constitute a target boundary line, and the target boundary line divides the design layout into multiple sub-areas.

2. The optical proximity correction method according to claim 1, wherein: The forming of the third boundary line outside the design pattern includes: forming the third boundary line along the outline of the design pattern.

3. The optical proximity correction method according to claim 2, wherein: The step of obtaining a segmentation point on the initial boundary line includes: performing an expansion process on the design graphic so that each edge of the design graphic is equidistantly translated toward the outside of the design graphic to form an expanded graphic, wherein the distance of the equidistant translation is the preset distance; Obtaining a second intersection point between the expanded graphic and the initial boundary line as the segmentation point; The forming of the third boundary line outside the design pattern includes: following the outline of the expanded pattern on either side of the initial boundary line to form a third boundary line that coincides with the outline.

4. The optical proximity correction method according to claim 3, wherein: After forming the expanded graphic and before obtaining the second intersection point of the expanded graphic and the initial boundary line, the method further includes: determining whether adjacent expanded graphics overlap, and if adjacent expanded graphics overlap, removing the outline of the overlapping portion of the adjacent expanded graphics.

5. The optical proximity correction method according to claim 3, wherein: The expanding process of the design pattern further includes: the expanded pattern includes two sub-patterns divided by the initial boundary line; The contour of the expanded figure along either side of the initial boundary line forms a third boundary line that coincides with the contour, including: forming a third boundary line that coincides with the contour along the contour of the sub-figure with a smaller area among the two sub-figures.

6. The optical proximity correction method according to any one of claims 1 to 3, wherein: The preset distance is 3 nm to 5 nm.

7. The optical proximity correction method according to claim 1, wherein: The optical proximity correction method further includes removing the first boundary line.

8. The optical proximity correction method according to claim 1, wherein: After forming the third boundary line outside the design pattern, the method further includes: when the minimum spacing between adjacent third boundary lines located on the same side of the second boundary line is less than or equal to a preset size, treating the adjacent third boundary lines as boundary lines to be processed; Among the boundary lines to be processed, the edges having the largest vertical distance to the second boundary line are selected as reference edges; Comparing the vertical distances from the reference side to the second boundary line, taking the boundary line to be processed corresponding to the reference side with the smaller vertical distance as the first boundary line to be processed, and the other boundary line to be processed as the second boundary line to be processed; Extending the reference side of the first boundary line to be processed toward the second boundary line to be processed until it contacts the second boundary line to be processed, so that the second boundary line to be processed, the first boundary line to be processed, and the second boundary line form a closed figure; The remaining contour lines of the closed figure other than the reference edge of the first boundary line to be processed are removed.

9. The optical proximity correction method according to claim 8, wherein: The preset size is 20 nm to 30 nm.

10. The optical proximity correction method according to claim 1, wherein: After the target boundary line divides the design layout into a plurality of sub-regions, the optical proximity correction method further includes: performing optical proximity correction processing on the design pattern in each of the sub-regions respectively.

11. The optical proximity correction method according to claim 10, wherein: After performing optical proximity correction processing on the design patterns in each of the sub-regions, the optical proximity correction method further includes: removing the target boundary line and splicing the sub-regions.

12. The optical proximity correction method according to claim 1, wherein: The design layout is a hole pattern layout, and the design pattern in the hole pattern layout is a hole pattern.

13. The optical proximity correction method according to claim 12, wherein: The hole pattern is square.

14. An optical proximity correction system, characterized in that: include: A graphics providing module, configured to provide a design layout, wherein the design layout includes a plurality of design graphics; an initial boundary line acquisition module, configured to acquire a grid-shaped initial boundary line corresponding to the design layout, wherein the grid-shaped initial boundary line passes through the design pattern, and the initial boundary line has at least two first intersections with the design pattern it passes through; a segmentation point acquisition module, configured to acquire segmentation points on the initial boundary line, the segmentation points being located on both sides of the design figure through which the initial boundary line passes and having a preset distance from the first intersection of the design figure through which the initial boundary line passes; the initial boundary line located between adjacent segmentation points and passing through the design figure being used as the first boundary line, and the remaining initial boundary lines being used as the second boundary line; A boundary generation module is used to form a third boundary line outside the design graphic, wherein the third boundary line is alternately connected to the second boundary line end to end through the dividing point, and the third boundary line and the second boundary line constitute a target boundary line, and the target boundary line divides the design layout into multiple sub-areas.

15. The optical proximity correction system of claim 14, wherein: The boundary generation module is used to form the third boundary line along the outline of the design graphic.

16. The optical proximity correction system of claim 15, wherein: The segmentation point acquisition module includes: an expansion graphic unit, configured to perform expansion processing on the design graphic so that each edge of the design graphic is equidistantly translated toward the outside of the design graphic to form an expanded graphic, wherein the equidistant translation distance is the preset distance; Selecting a point-taking unit for obtaining a second intersection point between the expanded graphic and the initial boundary line as the segmentation point; The boundary generation module is used to form a third boundary line that coincides with the outline of the expanded figure along either side of the initial boundary line.

17. A mask, characterized in that: include: A pattern obtained using the optical proximity correction method according to any one of claims 1 to 13.

18. A device, characterized in that The method comprises at least one memory and at least one processor, wherein the memory stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the optical proximity correction method according to any one of claims 1 to 13.

19. A storage medium, characterized in that The storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the optical proximity correction method according to any one of claims 1 to 13.

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