Sensor device and method of manufacturing sensor device

Abstract

The present invention provides a sensor device comprising a semiconductor substrate, a glass substrate, a physical quantity sensor, and a pad portion electrically connected to the physical quantity sensor. A recess disposed on at least one of the semiconductor substrate and the glass substrate is sealed by being joined with a second bonding portion in the semiconductor substrate through a first bonding portion in the glass substrate. The physical quantity sensor and the pad portion are disposed in a sealed space sealed by the semiconductor substrate and the glass substrate. The glass substrate has a cation-deficient layer in the first bonding portion having a cation concentration lower than that of the glass substrate.

Description

Technical Field

[0001] This invention relates to a sensor device and a method for manufacturing a sensor device. Background Technology

[0002] Patent document 1 describes "suppressing deviations in vacuum pressure atmosphere in physical quantity sensors" (abstract).

[0003] Patent document 2 describes "suppressing the adhesion between the movable electrode and the fixed electrode through simple steps, and achieving anodic bonding on this basis" (abstract).

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2014-173961

[0007] Patent Document 2: Japanese Patent Application Publication No. 2010-171203 Summary of the Invention

[0008] The technical problem to be solved by the present invention

[0009] In sensor devices, it is preferable to be able to seal the sensor simply and reliably. Summary of the Invention

[0011] In a first aspect of the present invention, a sensor device is provided. The sensor device includes a semiconductor substrate, a glass substrate, a physical quantity sensor, and a pad portion electrically connected to the physical quantity sensor. A recess provided in at least one of the semiconductor substrate and the glass substrate is sealed by joining a first bonding portion in the glass substrate to a second bonding portion in the semiconductor substrate. The physical quantity sensor and the pad portion are disposed in a sealed space sealed by the semiconductor substrate and the glass substrate. The glass substrate has a cation-deficient layer in the first bonding portion with a cation concentration lower than the cation concentration of the glass substrate.

[0012] The semiconductor substrate may have an oxide layer of oxygen and an oxide layer of the semiconductor contained in the semiconductor substrate in the second bonding portion.

[0013] Viewed from above, a through-hole may be provided in the glass substrate at a position overlapping the pad portion. The glass substrate may have a metal film disposed on the sidewall of the through-hole. The pad portion may be formed of metal. The metal film may be in contact with the pad portion.

[0014] The metal film may have an extension extending from the sidewall of the through-hole to the lower surface of the glass substrate that contacts the sealing space. The extension may be connected to the pad portion.

[0015] When viewed from above, the pads can be surrounded by a metal film.

[0016] The extension may include a peripheral portion of a metal film that contacts the sealing space. The lower surface of the peripheral portion of the metal film may be disposed below the upper surface of the pad portion.

[0017] When viewed from above, the metal film can be surrounded by the solder pads.

[0018] The pad portion may include an outer periphery of the pad that is in contact with the sealing space. The upper surface of the outer periphery of the pad may be disposed above the lower surface of the extension.

[0019] The sum of the thickness of the pad portion and the thickness of the extension portion can be greater than the height of the sealing space at the position where it overlaps with the pad portion when viewed from above.

[0020] The sum of the thickness of the pad portion and the thickness of the extension portion can be more than 1.1 times and less than 1.3 times the height of the sealing space at the position where it overlaps with the pad portion when viewed from above.

[0021] The distance from the inner side of the glass substrate to the pad in the in-plane direction of the semiconductor substrate can be greater than the height of the sealing space.

[0022] The distance from the inner side of the glass substrate to the pad in the in-plane direction of the semiconductor substrate can be more than 20 times and less than 200 times the height of the sealing space.

[0023] In the in-plane direction of the semiconductor substrate, the distance from the inner side of the glass substrate to the pad can increase from the upper end to the lower end of the inner side of the glass substrate.

[0024] A through hole may include a first portion in which the width of the through hole decreases downwards from the top end, and a second portion in which the width of the through hole decreases upwards from the bottom end. The width of the first portion at the top end of the through hole may be greater than the width of the second portion at the bottom end.

[0025] Part 1 can be a cone shape where the width of the through hole increases from bottom to top. Part 2 can be a cone shape where the width of the through hole increases from top to bottom.

[0026] When viewed from above, the pad area can be circular.

[0027] When viewed from above, the area around the pads can be rounded.

[0028] The shape around the pad can contain multiple arcs of circles with different radii of curvature.

[0029] When viewed from above, the radius of curvature can be more than 0.1 times and less than 1.0 times the diameter of the pad portion.

[0030] When viewed from above, the first joint can be positioned between multiple pads.

[0031] When viewed from above, the second joint can be positioned between multiple pads.

[0032] In a second aspect of the present invention, a method for manufacturing a sensor device is provided. The method includes a bonding stage in which a semiconductor substrate having a physical quantity sensor and pads electrically connected to the physical quantity sensor are anodized and bonded to a glass substrate. The bonding stage is a stage in which a recess provided in at least one of the semiconductor substrate and the glass substrate is sealed by anodizing a first bonding portion in the glass substrate and a second bonding portion in the semiconductor substrate, and is also a stage in which the physical quantity sensor and the pads are sealed.

[0033] Viewed from above, the glass substrate may have a through-hole. The glass substrate may have a metal film disposed on the sidewall of the through-hole. The pad portion may be formed of metal. The bonding stage may be a stage in which the physical quantity sensor and the pad portion are sealed by anodic bonding of the first bonding portion and the second bonding portion, and the through-hole is sealed by using the pad portion.

[0034] The manufacturing method of the sensor device may include a through-hole forming stage before the bonding stage. The through-hole forming stage may have a first forming stage and a second forming stage. The first forming stage may be a stage of sandblasting the upper surface of the glass substrate. The second forming stage may be a stage of sandblasting the lower surface of the glass substrate.

[0035] Before the bonding stage, one end of the lower surface of the first bonding portion on the side of the physical quantity sensor, and the other end, which is positioned further away from the physical quantity sensor than the first end, can be positioned away from the upper surface of the semiconductor substrate. The one end and the other end can be configured such that, in a direction intersecting the upper surface of the semiconductor substrate, the distance between the upper surface of the semiconductor substrate and the one end is greater than the distance between the upper surface of the semiconductor substrate and the other end. During the bonding stage, after rotating the lower surface of the first bonding portion towards the semiconductor substrate with the other end as the center, anodic bonding can be performed on the first bonding portion and the second bonding portion.

[0036] The manufacturing method of the sensor device may further include an etching stage, which forms a recess in at least one of a semiconductor substrate and a glass substrate by wet etching, prior to the bonding stage.

[0037] Furthermore, the above summary of the invention does not list all the features of the invention. In addition, sub-combinations of these feature groups can also constitute an invention. Attached Figure Description

[0038] Figure 1This is a diagram illustrating an example of a sensor device 100 according to one embodiment of the present invention.

[0039] Figure 2 It is shown Figure 1 A top view of an example of the semiconductor substrate 10 in the sensor device 100.

[0040] Figure 3 It is shown Figure 1 A top view of an example of the semiconductor substrate 10 in the sensor device 100.

[0041] Figure 4 It is shown Figure 1 A top view of an example of the glass substrate 20 in the sensor device 100.

[0042] Figure 5 yes Figure 1 An enlarged view of the first bonding portion 22 of the glass substrate 20 and the second bonding portion 16 of the semiconductor substrate 10.

[0043] Figure 6 yes Figure 1 Enlarged view of the through hole 50-2 and the area near the pad 30-2.

[0044] Figure 7 yes Figure 6 The top view of the through hole 50-2 and the pad portion 30-2.

[0045] Figure 8 yes Figure 1 Another enlarged view of the through hole 50-2 and the area near the pad portion 30-2.

[0046] Figure 9 yes Figure 8 The top view of the through hole 50-2 and the pad portion 30-2.

[0047] Figure 10 yes Figure 1 Enlarged view of the vicinity of the through hole 50-2, pad portion 30-2, first joint portion 22 and second joint portion 16.

[0048] Figure 11 yes Figure 1 Another enlarged view of the vicinity of the through hole 50-2, pad portion 30-2, first joint portion 22 and second joint portion 16.

[0049] Figure 12 yes Figure 1 Another enlarged view of the vicinity of the through hole 50-2, pad portion 30-2, first joint portion 22 and second joint portion 16.

[0050] Figure 13 This is another enlarged view of the vicinity of the through hole 50-2 in the glass substrate 20.

[0051] Figure 14 It is shown Figure 1 Another example of a top view of the semiconductor substrate 10 in the sensor device 100.

[0052] Figure 15 yes Figure 1 A magnified top view of a pad portion 30 in the sensor device 100.

[0053] Figure 16 This is a diagram illustrating an example of a method for manufacturing a sensor device 100 according to an embodiment of the present invention.

[0054] Figure 17 This is a diagram illustrating another example of a method for manufacturing a sensor device 100 according to one embodiment of the present invention.

[0055] Figure 18 This is a diagram illustrating another example of a method for manufacturing a sensor device 100 according to one embodiment of the present invention. Detailed Implementation

[0056] The present invention will be described below through embodiments, but these embodiments are not intended to limit the invention as defined in the claims. Furthermore, the combinations of features described in the embodiments are not necessarily all necessary for the solutions provided by the invention.

[0057] Figure 1 This is a diagram illustrating an example of a sensor device 100 according to one embodiment of the present invention. The sensor device 100 includes a semiconductor substrate 10, a glass substrate 20, a physical quantity sensor 40, and a pad portion 30. The pad portion 30 is electrically connected to the physical quantity sensor 40. At least a portion of the upper surface 13 of the semiconductor substrate 10 may be provided with an oxide film 12. Figure 1 In the image, oxide film 12 is shown in shaded areas.

[0058] In this specification, orthogonal coordinate axes of X, Y, and Z are sometimes used to explain technical matters. In this specification, the surface parallel to the upper surface 13 of the semiconductor substrate 10 is designated as the XY plane, and the direction perpendicular to the upper surface 13 and extending from the semiconductor substrate 10 toward the glass substrate 20 is designated as the Z-axis direction. In this specification, a defined direction within the XY plane is designated as the X-axis direction, and a direction orthogonal to the X-axis within the XY plane is designated as the Y-axis direction. The Z-axis direction can be parallel to the vertical direction, and the XY plane can be a horizontal plane. Figure 1 This is a diagram of the sensor device 100 viewed from the Y-axis direction.

[0059] In this specification, the side of the glass substrate 20 in the sensor device 100 is referred to as "upper" and the side of the semiconductor substrate 10 is referred to as "lower". In this specification, the view of the sensor device 100 from the glass substrate 20 toward the semiconductor substrate 10 parallel to the Z-axis is referred to as a top view. The directions of "upper" and "lower" are not limited to the vertical direction. In this specification, the view of the sensor device 100 along the XY plane is referred to as a side view.

[0060] Semiconductor substrate 10 is, for example, a Si (silicon) substrate. Glass substrate 20 contains cations. Glass substrate 20 is, for example, a silicate glass substrate.

[0061] One of the semiconductor substrate 10 and the glass substrate 20 is provided with a recess 90. In this example, the glass substrate 20 is provided with a recess 90. In this example, the recess 90 is provided from the lower surface 23 of the glass substrate 20 toward the upper surface 24.

[0062] The glass substrate 20 has a first bonding portion 22. The semiconductor substrate 10 has a second bonding portion 16. The recess 90 is sealed by engaging the first bonding portion 22 with the second bonding portion 16. The space sealed by the semiconductor substrate 10 and the glass substrate 20 is defined as a sealing space 92. The sealing space 92 is the recess 90 that is sealed by engaging the first bonding portion 22 with the second bonding portion 16.

[0063] The physical quantity sensor 40 is a sensor that detects the physical quantity of an object. The physical quantity sensor 40 can be a pressure sensor or an acceleration sensor. The physical quantity sensor 40 can be disposed on the semiconductor substrate 10. The physical quantity sensor 40 can be a part of the semiconductor substrate 10. The physical quantity sensor 40 can be a MEMS (Micro Electro Mechanical Systems) sensor.

[0064] The physical quantity sensor 40 may have a diaphragm 14. The diaphragm 14 may be part of the semiconductor substrate 10. When the diaphragm 14 is part of the semiconductor substrate 10, a recess 18 may be provided below the diaphragm 14 in the semiconductor substrate 10. Figure 1 In the middle, the position of the recess 18 when viewed from the side is shown by a dashed line.

[0065] The sensor device 100 may have multiple pad sections 30. Figure 1 The image shows two pad sections 30 (pad section 30-1 and pad section 30-2). The pad sections 30 can be grounded to the upper surface 13 or to the oxide film 12.

[0066] The physical quantity sensor 40 and the pad portion 30 are disposed in a sealed space 92. The sealed space 92 can be a vacuum. Vacuum can refer to an air pressure below 100 kPa.

[0067] The glass substrate 20 may have through holes 50. The glass substrate 20 may have multiple through holes 50. Figure 1 The diagram shows two through holes 50 (through hole 50-1 and through hole 50-2). The through holes 50 penetrate the glass substrate 20 from the upper surface 24 to the lower surface 27 (described later). The through holes 50 communicate with the recess 90. When viewed from above, the through holes 50 are positioned overlapping the pad portion 30. When viewed from above, the area of ​​the through holes 50 may be smaller than the area of ​​the pad portion 30.

[0068] The glass substrate 20 may have a metal film 52 disposed on the sidewall of the through hole 50. When the glass substrate 20 is provided with a plurality of through holes 50, the glass substrate 20 may have a plurality of metal films 52 corresponding to each of the plurality of through holes 50. Figure 1 The image shows two metal films 52 (metal film 52-1 and metal film 52-2).

[0069] Figure 2 It is shown Figure 1 A top view of an example of the semiconductor substrate 10 in the sensor device 100. Figure 2 In the diagram, the position of the oxide film 12 in a top view is shown by shading. The oxide film 12 can be configured to be grounded with the upper surface 13. Figure 2 In the image, the positions of the diaphragm 14 and the physical quantity sensor 40 are shown by thick dashed lines when viewed from above.

[0070] In this example, the sensor device 100 includes five pad portions 30 (pad portions 30-1 to pad portions 30-5). The five pad portions 30 can be arranged around the diaphragm 14. As will be described later, in this example, the glass substrate 20 is provided with five through holes 50 (through holes 50-1 to through holes 50-5). Figure 2 In the top view, the positions of the through holes 50-1 to 50-5 are shown with dashed lines.

[0071] in addition, Figure 1 yes Figure 2 The cross-sectional view shown at line A-A'. The A-A' section is an XZ section passing through the semiconductor substrate 10, oxide film 12, pad portion 30-1, and pad portion 30-2.

[0072] Figure 3 It is shown Figure 1 A top view of an example of the semiconductor substrate 10 in the sensor device 100. Figure 3 and Figure 2 Similarly, this is a top view of the semiconductor substrate 10, but Figure 2 The diagrams of the oxide film 12, diaphragm 14, and physical quantity sensor 40 shown are omitted, and the diagram is shown... Figure 2 Wiring 32, piezoelectric element 34, and second joint 16 (not shown). Figure 3 In the image, the second joint 16 is shown in shadow. The second joint 16 is the area facing the upper surface 13.

[0073] The sensor device 100 may include wiring 32 and a piezoelectric element 34. Wiring 32 may be metallic wiring. The piezoelectric element 34 is a resistor applied to the diaphragm 14 (see reference). Figure 2 A component that changes in pressure or other forces. The pad portion 30 and the physical quantity sensor 40 can be electrically connected via wiring 32. In this example, the piezoelectric element 34 and the pad portion 30 are connected via wiring 32.

[0074] Sealing space 92 and recess 90 (refer to) Figure 1 When viewed from above, the pad portion 30 can be surrounded by the second joint portion 16. When viewed from above, the second joint portion 16 can be disposed between the plurality of pad portions 30. In this example, the second joint portion 16 is disposed between pad portions 30-1 and 30-2 in the X-axis direction (see reference). Figure 2 Between ) and between pad 30-4 and pad 30-5 (refer to Figure 2 Between ), in this example, the second joint 16 is disposed between pad portion 30-1 and pad portion 30-3 in the Y-axis direction (see reference). Figure 2 Between ) and between pad 30-2 and pad 30-5 (refer to Figure 2 )between.

[0075] Figure 4 It is shown Figure 1 A top view of an example of the glass substrate 20 in the sensor device 100. Figure 4 In the middle, it is shown by a thick dashed line. Figure 2 The positions of the diaphragm 14 and the physical quantity sensor 40 are shown. Figure 4 In the image, the position of the pad portion 30 is indicated by a thin dashed line.

[0076] Figure 4 In the image, the position of the outline of the recess 90 provided on the glass substrate 20 is shown by a fine dashed line. Figure 4 In the diagram, the area enclosed by the thin dashed line represents the position of the concave portion 90 when viewed from above. Figure 4 In the diagram, the area outside the region enclosed by the fine dotted line is the first joint 22. The first joint 22 is the area facing the lower surface 23.

[0077] Sealing space 92 and recess 90 (refer to) Figure 1When viewed from above, the first joint 22 can be surrounded by the first joint portion 22. When viewed from above, the first joint portion 22 can be disposed between multiple pad portions 30. In this example, the second joint portion 16 is disposed between pad portions 30-1 and 30-2 in the X-axis direction (see reference). Figure 2 Between ) and between pad 30-4 and pad 30-5 (refer to Figure 2 Between ), in this example, the second joint 16 is disposed between pad portion 30-1 and pad portion 30-3 in the Y-axis direction (see reference). Figure 2 Between ) and between pad 30-2 and pad 30-5 (refer to Figure 2 )between.

[0078] In this example, the glass substrate 20 is provided with five through holes 50 (through holes 50-1 to through holes 50-5). Figure 4 In the top view, the positions of the through holes 50-1 to 50-5 are shown with solid lines.

[0079] in addition, Figure 1 yes Figure 4 The sectional view at line A-A' shown. Figure 4 The position of line A-A' as shown in the top view and Figure 2 The A-A' line shown is in the same position when viewed from above. Figure 4 In the diagram, the A-A' section is the XZ section passing through the glass substrate 20, the recess 90, the through hole 50-1, and the through hole 50-2.

[0080] Figure 5 yes Figure 1 An enlarged view of the first bonding portion 22 of the glass substrate 20 and the second bonding portion 16 of the semiconductor substrate 10. The recess 90 can be sealed by engaging the upper surface 13 of the first bonding portion 22 with the lower surface 23 of the second bonding portion 16. The glass substrate 20 has a cation-deficient layer 26 in the first bonding portion 22. Figure 5 In the diagram, the cations 80 contained in the glass substrate 20 are represented by black circular marks. 2- (Oxygen ion) 82 is indicated by a white circular mark. Cation 80 can be a basic ion. Cation 80 is, for example, Na+ (sodium ion).

[0081] The concentration of cations 80 in the cation-deficient layer 26 is set as concentration Dd. The concentration of cations 80 in the glass substrate 20 is set as concentration Dn. Concentration Dd is smaller than concentration Dn. Concentration Dn is the concentration of cations 80 in the glass substrate 20 before the semiconductor substrate 10 and the glass substrate 20 are bonded. After the semiconductor substrate 10 and the glass substrate 20 are bonded, concentration Dd can be the concentration of cations 80 in the portion of the glass substrate 20 excluding the cation-deficient layer 26, or the concentration of cations 80 in the portion excluding the first bonding portion 22.

[0082] The glass substrate 20 may have a cation-deficient layer 26 on its lower surface 23, which is in contact with the second bonding portion 16 in the first bonding portion 22. The cation-deficient layer 26 may include the lower surface 23.

[0083] The semiconductor substrate 10 may have an oxide layer 19 on the second bonding portion 16. Figure 5 In the diagram, oxide layer 19 is shown in shaded areas. Oxide layer 19 may be an oxide layer between oxygen and the semiconductor contained in semiconductor substrate 10. The oxygen may be an oxide layer contained in glass substrate 20. 2- (Cation) 82. The semiconductor substrate 10 may have an oxide layer 19 on its upper surface 13, which is in contact with the first bonding portion 22 in the second bonding portion 16. The oxide layer 19 may include the upper surface 13.

[0084] The width of the second joint 16 in the X-axis direction can be equal to the width of the first joint 22 in the X-axis direction. The width of the oxide layer 19 in the X-axis direction can be equal to the width of the second joint 16 in the X-axis direction. Figure 5 In the diagram, the position of the end of the second junction 16 on the central side of the semiconductor substrate 10 in the X-axis direction is indicated by a single-dotted line.

[0085] The first bonding portion 22 and the second bonding portion 16 can be joined by anodic bonding. During the anodic bonding process of the first bonding portion 22 and the second bonding portion 16, the cations 80 in the first bonding portion 22 move in a direction separating from the lower surface 23. Therefore, when the first bonding portion 22 and the second bonding portion 16 are joined by anodic bonding, the lower surface 23 of the glass substrate 20 that is in contact with the second bonding portion 16 in the first bonding portion 22 easily has a cation-deficient layer 26. When the first bonding portion 22 and the second bonding portion 16 are joined by anodic bonding, the concentration Dn of the cations 80 in the glass substrate 20 can be the concentration of the cations 80 in the glass substrate 20 before the anodic bonding of the first bonding portion 22 and the second bonding portion 16.

[0086] During the anodizing process of the first joint 22 and the second joint 16, the 0 present near the lower surface 23 2- (Cation) 82 from the upper surface 24 (reference) Figure 1 It moves in the direction of the lower surface 23. Therefore, when the first bonding portion 22 and the second bonding portion 16 are bonded by anodic bonding, the upper surface 13 of the semiconductor substrate 10 that is in contact with the first bonding portion 22 in the second bonding portion 16 is likely to have an oxide layer 19.

[0087] The thickness of the cation-deficient layer 26 is defined as thickness t1. Thickness t1 can be 0.2 μm or more and 3.0 μm or less, or 0.4 μm or more and 2.0 μm or less.

[0088] Figure 6 yes Figure 1 Enlarged view of the through hole 50-2 and the vicinity of the pad portion 30-2. Among them, in Figure 6 middle, Figure 3 The wiring 32 shown is omitted. A metal film 52 is provided on the sidewall 28 of the through hole 50. The lower surface of the glass substrate 20, which is in contact with the sealing space 92, is designated as the lower surface 27. The through hole 50 can be provided from the upper surface 24 of the glass substrate 20 to the lower surface 27.

[0089] The metal film 52 may include an extension 53. The extension 53 is provided to extend from the sidewall 28 of the through hole 50 to the lower surface 27. The extension 53 may be in contact with the lower surface 27. The metal film 52 may be continuously provided along the sidewall 28 and the lower surface 27 from the position of the upper surface 24 in the Z-axis direction.

[0090] In the X-axis direction, the position of the sidewall 28 on the central side of the glass substrate 20 when viewed from above is designated as position P1. The end position of the pad portion 30 in the X-axis direction, and the end position on the central side of the glass substrate 20 when viewed from above, is designated as position P2. The end position of the extension portion 53 in the X-axis direction, and the end position on the central side of the glass substrate 20 when viewed from above, is designated as position P3. The extension portion 53 is a metal film 52 between positions P1 and P3 in the X-axis direction.

[0091] The pad portion 30 can be formed of metal. A metal film 52 can be connected to the pad portion 30. In this example, the extension 53 is connected to the pad portion 30. The metal film 52 is connected to the pad portion 30 formed of metal, thereby connecting the wiring 32 (see reference 32) to the pad portion 30. Figure 3 The current flowing through the metal film 52 flows through the metal film 52. If the metal film 52 does not include the extension 53, the pad portion 30 and the metal film 52 provided on the side wall 28 can be connected at the position of the lower surface 27 in the Z-axis direction.

[0092] The metal film 53 may include a metal film outer periphery 54. The metal film outer periphery 54 is an extension 53 between position P2 and position P3 in the X-axis direction. In this example, the metal film outer periphery 54 is in contact with the sealing space 92. The metal film outer periphery 54 does not overlap with the pad portion 30 when viewed from above.

[0093] Position Q1 is defined as the location of the pad portion 30 in the Z-axis direction, and the location furthest from the semiconductor substrate 10 in the Z-axis direction. Position Q0 is defined as the location furthest from the glass substrate 20 in the Z-axis direction. The upper surface of the pad portion 30 is defined as the upper surface 36. The upper surface 36 is a planar region including position Q1. The lower surface of the pad portion 30 is defined as the lower surface 35. The lower surface 35 is a planar region including position Q0. Position Q2 is defined as the location of the extension portion 53 in the Z-axis direction, and the location furthest from the glass substrate 20 in the Z-axis direction. The lower surface of the extension portion 53 is defined as the lower surface 55. The lower surface 55 is a planar region including position Q2. The upper surface of the oxide film 12 is defined as the upper surface 11. The distance from the upper surface 11 to the upper surface 36 of the pad portion 30 is defined as the distance hp.

[0094] The thickness of the oxide film 12 is defined as thickness ts. The thickness of the pad portion 30 is defined as thickness tp. Thickness tp refers to the thickness from the lower surface 35 to the upper surface 36 of the pad portion 30 in the area where the pad portion 30 and the oxide film 12 do not overlap when viewed from above. The thickness tp value refers to the sum of thickness ts and height hp in the area where the pad portion 30 and the oxide film 12 overlap when viewed from above. Thickness tp can be the distance from the upper surface 13 of the semiconductor substrate 10 to the upper surface 36 of the pad portion 30.

[0095] The thickness of the extension 53 is set to thickness te. The height of the sealing space 92 is set to height hs. Height hs is the height of the sealing space 92 at the position where it overlaps with the pad portion 30 when viewed from above. In this example, height hs is the height from the upper surface 13 of the semiconductor substrate 10 to the lower surface 27 of the glass substrate 20.

[0096] The sum of thickness tp and thickness te can be greater than the height hs. Since the sum of thickness tp and thickness te is greater than the height hs, at the first joint 22 of the glass substrate 20 (see reference...) Figure 1 The second bonding portion 16 of the semiconductor substrate 10 (see reference) Figure 1 When the two positions are engaged, position Q2 is easily positioned below position Q1.

[0097] The lower surface 55 of the outer periphery of the metal film 54 can be disposed below the upper surface 36 of the pad portion 30. That is, position Q2 can be located below position Q1. In the first bonding portion 22 (refer to...) Figure 1 ) and the second joint 16 (refer to Figure 1In the case of anodic bonding, a force in the Z-axis direction from the glass substrate 20 to the semiconductor substrate 10 is applied to the glass substrate 20. The extension 53 includes a metal film peripheral portion 54, and since a force is applied from the glass substrate 20 to the semiconductor substrate 10, the lower surface 55 of the metal film peripheral portion 54 is easily positioned below the upper surface 36 of the pad portion 30. Therefore, the through-hole 50 is easily sealed by the pad portion 30.

[0098] The sum of thickness tp and thickness te can be more than 1.1 times and less than 1.3 times the height hs. Thickness tp can be more than 1.2 μm and less than 1.3 μm. Thickness te can be more than 0.3 μm and less than 0.5 μm. Height hs can be more than 1.2 μm and less than 1.5 μm.

[0099] Figure 7 yes Figure 6 The top view of the through hole 50-2 and the pad portion 30-2. Figure 7 In the top view, the position of the outer edge of the through hole 30-2 is shown by a dashed line. When viewed from above, the area of ​​the metal film 52 can be larger than the area of ​​the pad portion 30. The pad portion 30 can be surrounded by the metal film 52 when viewed from above. Because the pad portion 30 is surrounded by the metal film 52 when viewed from above, the first bonding portion 22 (see reference...) Figure 1 ) and the second joint 16 (refer to Figure 1 When anodic bonding is performed, the lower surface 55 of the metal film 52 can easily make close contact with the entire surface of the upper surface 36 of the pad portion 30. As a result, the through hole 50 can be easily sealed by the pad portion 30.

[0100] Figure 8 yes Figure 1 Another enlarged view of the vicinity of the through-hole 50-2 and the pad portion 30-2. The end position of the extension 53 in the X-axis direction, and the end position of the glass substrate 20 on the central side when viewed from above, is designated as position P3'. In this example, position P3' is positioned relative to position P2 on the side closer to the through-hole 50 in the X-axis direction. In this example, at the points mentioned above... Figure 6 The examples shown are different.

[0101] In this example, the pad portion 30 includes a pad peripheral portion 37. The metal film peripheral portion 37 is the pad portion 30 between position P3' and position P2 in the X-axis direction. In this example, the pad peripheral portion 37 is in contact with the sealing space 92. In this example, the pad peripheral portion 37 does not overlap with the metal film 52 when viewed from above. In this example, the pad peripheral portion 37 does not overlap with the extension portion 53 when viewed from above.

[0102] The upper surface 36 of the outer periphery of the pad portion 37 can be disposed above the lower surface 55 of the extension portion 53. That is, position Q1 can be located above position Q2. As described above, in the first joint portion 22 (refer to...) Figure 1 ) and the second joint 16 (refer to Figure 1 In the case of anodic bonding, a force in the Z-axis direction from the glass substrate 20 to the semiconductor substrate 10 is applied to the glass substrate 20. The pad portion 30 includes a pad peripheral portion 37, and since a force is applied from the glass substrate 20 to the semiconductor substrate 10, the upper surface 36 of the pad peripheral portion 37 is easily positioned above the lower surface 55 of the extension portion 53. As a result, the through hole 50 is easily sealed by the pad portion 30.

[0103] Figure 9 yes Figure 8 The image shows a top view of the through-hole 50-2 and the pad portion 30-2. In this example, the area of ​​the pad portion 30 is larger than the area of ​​the metal film 52 when viewed from above. The metal film 52 can be surrounded by the pad portion 30 when viewed from above. Because the metal film 52 is surrounded by the pad portion 30 when viewed from above, the first joint portion 22 (see reference...) Figure 1 ) and the second joint 16 (refer to Figure 1 When anodic bonding is performed, the upper surface 36 of the pad portion 30 can easily make close contact with the entire surface of the lower surface 55 of the metal film 52. As a result, the through hole 50 can be easily sealed by the pad portion 30.

[0104] Figure 10 yes Figure 1 Enlarged view of the vicinity of the through hole 50-2, pad portion 30-2, first joint portion 22, and second joint portion 16. The inner surface 29 is the inner side surface of the glass substrate 20 that is in contact with the sealing space 92. The inner surface 29 can be a surface intersecting the upper surface 13 or a surface orthogonal to the upper surface 13. In this example, the inner surface 29 is orthogonal to the upper surface 13.

[0105] The distance dp is defined as the distance from the inner surface 29 of the glass substrate 20 to the pad portion 30 in the in-plane direction of the semiconductor substrate 10. When the sensor device 100 has multiple pad portions 30, the distance dp is the distance between the pad portion 30 located at the shortest distance from the inner surface 29 and the inner surface 29. In this example, the distance dp refers to the shortest distance in the XY in-plane direction from the inner surface 29 to a pad portion 30.

[0106] The height of the sealing space 92 is set to height hs'. Height hs' is the height of the sealing space 92 between the inner side 29 and the pad portion 30 configured with a distance dp separated from the inner side 29. Furthermore, in this example, height hs' is... Figure 6 and Figure 8The heights hs shown are equal.

[0107] The distance dp can be greater than the height hs'. As mentioned above, at the first joint 22 (refer to...) Figure 1 ) and the second joint 16 (refer to Figure 1 In the case of anodic bonding, a force in the Z-axis direction from the glass substrate 20 to the semiconductor substrate 10 is applied to the glass substrate 20. When this force is applied to the glass substrate 20, and the sum of the thickness tp and the thickness te is greater than the height hs (see reference...). Figure 6 and Figure 8 The force from the semiconductor substrate 10 towards the glass substrate 20 in the Z-axis direction is easily applied between the through hole 50-2 and the first joint 22 in the glass substrate 20. When the distance dp is greater than the height hs', this force from the semiconductor substrate 10 towards the glass substrate 20 in the Z-axis direction is more easily mitigated compared to when the distance dp is less than the height hs'. Therefore, damage to the glass substrate 20 is easily suppressed.

[0108] The distance dp can be more than 20 times but less than 200 times the height hs', more than 50 times but less than 100 times, or more than 60 times but less than 90 times.

[0109] Figure 11 yes Figure 1 Another enlarged view of the vicinity of the through hole 50-2, pad portion 30-2, first joint portion 22, and second joint portion 16. In this example, the inner surface 29 intersects with the upper surface 13 but is not orthogonal. In this example, at the points mentioned above, and Figure 10 The examples shown are different.

[0110] Set the upper end of the inner side surface 29 as the upper end Eu1. Set the lower end of the inner side surface 29 as the lower end Ed1. Distance dp (refer to...) Figure 10 It can be increased from the upper end Eu1 to the lower end Ed1. The inner surface 29 can be tapered when viewed from above.

[0111] As described above, when a force is applied to the glass substrate 20 in the Z-axis direction from the glass substrate 20 to the semiconductor substrate 10, and the sum of the thickness tp and the thickness te is greater than the height hs (refer to...) Figure 6 and Figure 8At the location of the through-hole 50-2 in the X-axis direction, a force in the direction from the semiconductor substrate 10 toward the glass substrate 20 (Z-axis direction) is easily applied. Therefore, on the glass substrate 20 above the lower surface 27, a force parallel to the Z-axis and in the opposite direction is easily applied to the through-hole 50-2 side and the first joint 22 side in the X-axis direction. Therefore, warping caused by this opposite force is easily generated on the glass substrate 20 above the lower surface 27. In this example, the distance dp (refer to...) Figure 10 The glass substrate 20 above the lower surface 27 is prone to bending as the surface increases from the upper end Eu1 to the lower end Ed1. Therefore, if warping occurs in the glass substrate 20, the warping can be easily mitigated.

[0112] The distance from the inner side surface 29 to the pad portion 30 and from the upper end Eu1 to the pad portion 30 in the in-plane direction of the semiconductor substrate 10 is defined as distance dp1. Distance dp1 can be the minimum value of distance dp. The distance from the inner side surface 29 to the pad portion 30 and from the lower end Ed1 to the pad portion 30 in the in-plane direction of the semiconductor substrate 10 is defined as distance dp2. Distance dp2 can be the maximum value of distance dp. In the Z-axis direction, the position of the lower end Ed1 can be the same as the position of the lower surface 23 of the glass substrate 20 or the same as the position of the upper surface 13 of the semiconductor substrate 10.

[0113] Figure 12 yes Figure 1 Another enlarged view of the vicinity of the through-hole 50-2, pad portion 30-2, first bonding portion 22, and second bonding portion 16. A portion of the lower surface 27 slopes inward from the pad portion 30 toward the inner surface 29. In this example, in this portion of the lower surface 27, the height hs' decreases from the pad portion 30 to the inner surface 29. In this example, this portion of the lower surface 27 is not parallel to the upper surface 13 of the semiconductor substrate 10. In this example, at the points mentioned above... Figure 11 The examples shown are different.

[0114] In this example, after the semiconductor substrate 10 is bonded to the glass substrate 20, a portion of the lower surface 27 that is in contact with the sealing space 92 slopes inward from the pad portion 30 toward the inner side 29, and another portion of the lower surface 27 is parallel to the upper surface 13. This other portion of the lower surface 27 is a portion of the lower surface 27 that is in contact with the extension portion 53.

[0115] In this example, a portion of the lower surface 27 slopes inward from the pad portion 30 toward the inner side surface 29, therefore, with Figure 11 Similarly, in the example shown, at the first joint 22 (refer to...) Figure 1 ) and the second joint 16 (refer to Figure 2When the two surfaces are joined together, the glass substrate 20 above the lower surface 27 is prone to bending. Therefore, if the glass substrate 20 warps, the warping can be easily mitigated.

[0116] Figure 13 This is another enlarged view of the vicinity of the through hole 50-2 in the glass substrate 20. Figure 13 middle, Figure 1 The location of the through hole 50-2 is indicated by a single-dot dashed line. Figure 13 In the middle, the following was omitted. Figure 1 The metal film 52 shown.

[0117] In this example, the upper end of the through hole 50-2 is designated as the upper end Eu2, and the lower end as the lower end Ed2. The upper end Eu2 is the upper end of the through hole 50-2 where the upper surface 24 intersects with the sidewall 28 of the through hole 50-2. The lower end Ed2 is the lower end of the through hole 50-2 where the lower surface 27 intersects with the sidewall 28 of the through hole 50-2. The position of the upper end Eu2 in the Z-axis direction can be the same as the position of the upper surface 24 in the Z-axis direction. The position of the lower end Ed2 in the Z-axis direction can be the same as the position of the lower surface 27 in the Z-axis direction.

[0118] The through-hole 50 may include a first portion 88 where the width of the through-hole 50 decreases from the upper end Eu2 to the lower end, and a second portion 89 where the width of the through-hole 50 decreases from the lower end Ed2 to the upper end. In this example, the width of the through-hole 50 refers to its width in the X-axis direction. The glass substrate 20 may have the first portion 88 and the second portion 89. The first portion 88 may be a tapered shape where the width of the through-hole 50 widens from the lower end to the upper end. The second portion 89 may be a tapered shape where the width of the through-hole 50 widens from the upper end to the lower end.

[0119] Part 1 88 can be located above Part 2 89. Part 1 88 and Part 2 89 can be connected. The lower end of Part 1 88 can be connected to the upper end of Part 2 89. In the Z-axis direction, the position of the lower end of Part 1 88 and the position of the upper end of Part 2 89 can be the same.

[0120] In this example, the width of the through hole 50-2 at the upper Ed2 is set to width Wu in the X-axis direction. The width of the through hole 50-2 at the upper Ed2 refers to the width of the through hole 50-2 at the upper Ed2 position in the Z-axis direction. In this example, the width of the through hole 50-2 at the lower Ed2 is set to width Wd in the X-axis direction. The width of the through hole 50-2 at the lower Ed2 refers to the width of the through hole 50-2 at the lower Ed2 position in the Z-axis direction. Figure 1 The width of the through hole 50-2 in the X-axis direction is set to width W0.

[0121] The width Wd can be smaller than the width W0. Since the width Wd is smaller than the width W0, the upper surface 36 of the pad portion 30 (refer to...) Figure 6 and Figure 8 The area of ​​) is easily made larger than Figure 1 The area of ​​the upper surface 36 of the pad portion 30 shown is smaller. Therefore, the pad portion 30 in this example is smaller than... Figure 1 The pad portion 30 shown is easier to miniaturize.

[0122] Width Wu can be larger than width Wd. When width Wd is smaller than width W0, since width Wu is larger than both width Wd and width W0, the area of ​​sidewall 28 tends to become larger than... Figure 1 The area of ​​the sidewall 28 shown is larger. Therefore, the area of ​​the metal film 52 disposed on the sidewall 28 is more likely to become larger than that of the sidewall 28. Figure 1 The area of ​​the metal film 52 shown is larger. Therefore, the resistance value of the metal film 52 is more likely to become larger than that of the metal film 52. Figure 1 The resistance value of the metal film 52 shown should be small.

[0123] Figure 14 It is shown Figure 1 This is another example of a top view of the semiconductor substrate 10 in the sensor device 100. In this example, the pad portion 30 is circular when viewed from above. In this example, at the points mentioned above... Figure 2 The sensor device 100 shown is different. The circle is not limited to a perfect circle, but refers to an ellipse or the like, which has an arc-shaped perimeter when viewed from above the pad portion 30. The shape of this perimeter can include multiple arcs of circles with different radii of curvature.

[0124] When the pad portion 30 is circular in top view, the oxide film 12 disposed around the pad portion 30 in top view can also be circular in shape, and the bonding area 16 disposed around the oxide film 12 in top view (see reference) Figure 3 The shape of the pad portion 30 can also be circular. Since the pad portion 30 and the bonding area 16 are circular when viewed from above, when the first bonding portion 22 and the second bonding portion 16 are bonded, the pad portion 30 can easily generate equal pressure in the XY plane, and the bonding area 16 can easily generate equal pressure in the XY plane.

[0125] Figure 15 yes Figure 1 This is a top-view enlarged view of a pad portion 30 in the sensor device 100. In this example, the corners 38 of the pad portion 30 are rounded. In this example, the pad portion 30 includes four angles 38 (corner 38-1 to corner 38-4).

[0126] The diameter of the pad portion 30 is set as diameter R. Diameter R can be the largest distance from the center of the pad portion 30 to the outer edge of the pad portion 30 in the XY plane. The center of the pad portion 30 can be the centroid of the shape of the pad portion 30 when viewed from above.

[0127] Set the radius of curvature of corner 38 as the radius of curvature r. Figure 15 In the diagram, the circle with radius of curvature r is represented by a dashed line. The radius of curvature r can be more than 0.1 times and less than 1.0 times the diameter R, or more than 0.2 times and less than 1.0 times. In the metal film 52 (refer to...) Figure 6 When the pad portion 30 is joined to the pad portion 30, on the upper surface 36 of the pad portion 30 (refer to...) Figure 6 The in-plane and extension 53 (refer to) Figure 6 The lower surface 55 (refer to) Figure 6 Pressure is generated in the plane of the upper surface 36. Since the radius of curvature r is more than 0.1 times the diameter R, compared to the case where the radius of curvature r is less than 0.1 times the diameter R, this pressure is generated in the plane of the upper surface 36 and the lower surface 55 (refer to...). Figure 6 The surface of the pad 30 is more likely to become uniform. Therefore, the adhesion between the upper surface 36 and the lower surface 55 is easier to improve. Therefore, the sealing performance of the sealing space 92 is easier to improve. In addition, the case where the radius of curvature r is 1.0 times the diameter R refers to the case where the pad portion 30 is a perfect circle when viewed from above.

[0128] The outer periphery of the pad portion 30 when viewed from above may include a corner portion 38 with a radius of curvature r and a straight portion 39. The pad portion 30 may also be circular when viewed from above, including both the corner portion 38 with a radius of curvature r and the straight portion 39.

[0129] Figure 16 This diagram illustrates an example of a method for manufacturing a sensor device 100 according to an embodiment of the present invention. The method for manufacturing the sensor device 100 includes a bonding stage S200. The bonding stage S200 is a stage in which a semiconductor substrate 10 and a glass substrate 20 are anodicly bonded. The semiconductor substrate 10 is provided with a physical quantity sensor 40 and a pad portion 30. The pad portion 30 is electrically connected to the physical quantity sensor 40.

[0130] At least one of the semiconductor substrate 10 and the glass substrate 20 is provided with a recess 90. In this example, the glass substrate 20 is provided with a recess 90. The bonding stage 200 is the stage in which the recess 90 is sealed by anodizing the first bonding portion 22 and the second bonding portion 16, and is also the stage in which the physical quantity sensor 40 and the pad portion 30 are sealed. The sensor device 100 is manufactured by bonding stage S200 (see reference). Figure 1 ).

[0131] like Figure 3 As shown, when viewed from above, the glass substrate 20 may have a through hole 50. For example... Figure 3 and Figure 6 As shown, the glass substrate 20 may have a metal film 52 disposed on the sidewall 28 of the through hole 50. The pad portion 30 may be formed of metal.

[0132] The bonding stage S200 can be a stage in which the physical quantity sensor 40 and the pad portion 30 are sealed by anodic bonding of the first bonding portion 22 and the second bonding portion 16, and the through hole 50 is sealed by the pad portion 30. Thus, in the manufacturing method of the sensor device 100, the sealing of the physical quantity sensor 40 and the pad portion 30, as well as the sealing of the through hole 50 based on the pad portion 30, can be performed in one stage.

[0133] Figure 17 This is a diagram illustrating another example of a method for manufacturing a sensor device 100 according to one embodiment of the present invention. Figure 17 In this example, the vicinity of the first bonding portion 22 of the glass substrate 20 and the second bonding portion 16 of the semiconductor substrate 10 is shown in magnification. In this example, the manufacturing method of the sensor device 100 includes a configuration stage S190 before the bonding stage S200.

[0134] One end of the lower surface 23 of the first joint 22 on the side of the physical quantity sensor 40 is designated as end E1. The other end of the lower surface 23 of the first joint 22 is designated as end E2. End E2 is the end of the lower surface 23 where the physical quantity sensor 40 is disposed, which is further away from end E1. In this example, end E1 and end E2 are one end and the other end of the lower surface 23 in the X-axis direction, respectively. In the configuration stage S190, end E1 and end E2 are configured separately on the upper surface 13 of the semiconductor substrate 10.

[0135] The distance between the upper surface 13 and one end E1 in the direction intersecting the upper surface 13 of the semiconductor substrate 10 (in this example, the Z-axis direction) is set as distance de1, and the distance between the upper surface 13 and the other end E2 is set as distance de2. One end E1 and the other end E2 can be configured such that distance de1 is larger than distance de2. In the configuration stage S190, one end E1 can be configured on the upper surface 24 (refer to) which is closer to the Z-axis direction than the other end E2. Figure 16 One side. Alternatively, the other end E2 can be grounded to phase 13 of the upper surface. That is, the distance de2 can be zero.

[0136] In this example, during configuration phase S190, one end E1 and the other end E2 are configured such that the distance de1 is greater than the distance de2. Therefore, in the case where bonding phase 200 is the phase of anodic bonding of the first bonding portion 22 and the second bonding portion 16, the first bonding portion 22 and the second bonding portion 16 are attracted by electrostatic force. Therefore, the other end E2 is more likely to contact the upper surface 13 earlier than one end E1. After the other end E2 contacts the upper surface 13, the lower surface 23 is more likely to rotate about the other end E2 toward the semiconductor substrate 10. The direction of this rotation is... Figure 17 The arrangement phase S 190 is indicated by a thick arrow.

[0137] In this example, after the lower surface 23 is rotated as described above in the bonding stage S200, the first bonding portion 22 and the second bonding portion 16 are anodicly bonded. Therefore, compared to the case where one end E1 and the other end E2 are positioned at the same location in the Z-axis direction in the arrangement stage S190, the force from the glass substrate 20 towards the semiconductor substrate 10 is more easily applied to the lower surface 27 of the glass substrate 20. Therefore, the through hole 50 (refer to...) Figure 16 It is easier to be soldered to pads 30 (refer to) Figure 16 It can be reliably sealed.

[0138] Figure 18 This is a diagram illustrating another example of a method for manufacturing a sensor device 100 according to one embodiment of the present invention. The method for manufacturing the sensor device 100 may further include an etching stage S184 in which a recess 150 is formed on at least one of the semiconductor substrate 10 and the glass substrate 20 by wet etching prior to the bonding stage S200. In this example, the etching stage S184 is the stage in which the recess 150 is formed on the glass substrate 20 by wet etching.

[0139] Etching stage S184 is a stage in which the lower surface 23 of the glass substrate 20 is wet-etched. In etching stage S184, a mask 202 may be provided on the lower surface 23. Etching stage S184 may be a stage in which the recess 150 is formed by immersing the glass substrate 20 in an etching solution.

[0140] By etching the lower surface 23 of the glass substrate 20, it is easy to form Figure 11 The sidewall 28 is shown. That is, by performing wet etching on the lower surface 23, the sidewall 28 is easily formed into a tapered shape when viewed from above. The etching stage S184 may have a stage of removing the mask 202 after the first etching stage S180.

[0141] The manufacturing method of the sensor device 100 may include a through-hole forming stage S188 prior to the bonding stage S200. The through-hole forming stage S188 may include a first part forming stage S186 and a second part forming stage S187.

[0142] The first part forming stage S186 may be a stage in which the upper surface 24 of the glass substrate 20 is sandblasted. In the first part forming stage S186, a mask 212 may be provided on the upper surface 24. The first part forming stage S186 may be a stage in which the first part 88 of the through-hole 50 is formed by sandblasting the upper surface 24. The first part forming stage S186 may be a stage in which the upper surface 24 is subjected to so-called sandblasting. By sandblasting the upper surface 24, as... Figure 13 As shown, the first part 88 is easily made into a tapered shape in which the width of the through hole 50 extends from below to above (in the direction from the lower surface 27 to the upper surface 24). The through hole forming stage S188 may have a stage of removing the mask 212 after the first part forming stage S186.

[0143] The second part forming stage S187 may be a stage in which the lower surface 27 of the glass substrate 20 is sandblasted. In the second part forming stage S187, a mask 214 may be provided on the lower surface 27. The second part forming stage S187 may be a stage in which the second part 89 and the recess 90 of the through hole 50 are formed by sandblasting the lower surface 27. The second part forming stage S187 may be a stage in which the lower surface 27 is subjected to so-called sandblasting. By sandblasting the lower surface 27, as... Figure 13 As shown, the second part 89 is likely to become a tapered shape in which the width of the through hole 50 extends from top to bottom (in the direction from the upper surface 24 to the lower surface 27). The through hole forming stage S188 may have a stage of removing the mask 214 after the second part forming stage S187.

[0144] The first portion 88 and the second portion 89 are formed on the glass substrate 20 through the first portion formation stage S186 and the second portion formation stage S187. Figure 13 As shown, the width Wu of the through hole 50 at the upper end Ed2 in the X-axis direction can be larger than the width Wd of the through hole 50 at the lower end Ed2 in the Z-axis direction.

[0145] The manufacturing method of the sensor device 100 may include a metal film formation stage S189 prior to the bonding stage S200. The metal film formation stage S189 is the stage where a metal film 52 is formed on the sidewall 28 of the through-hole 50. The metal film 52 can be formed on the sidewall 28 from the upper surface 24 to the lower surface 27. In the manufacturing method of the sensor device 100, the semiconductor substrate 10 and the glass substrate 20 on which the metal film 52 has been formed in the metal film formation stage S189 may be anodicly bonded during the bonding stage S200.

[0146] The present invention has been described above using embodiments, but the technical scope of the present invention is not limited to the scope described in the above embodiments. Various changes or improvements can be made based on the above embodiments, which will be obvious to those skilled in the art. As can be seen from the claims, the various changes or improvements described above are also included within the technical scope of the present invention.

[0147] Please note that the execution order of actions, processes, steps, and stages in the apparatus, systems, programs, and methods shown in the claims, specification, and drawings can be implemented in any order, unless explicitly stated as "before" or "previously," and unless the output of a previous process is used in a subsequent process. The use of terms such as "firstly" and "then" in the action flow descriptions in the claims, specification, and drawings for ease of explanation does not imply that the actions must be performed in this order.

[0148] Label Explanation

[0149] 10 Semiconductor substrates

[0150] 12 Oxide Film

[0151] 13 Upper surface

[0152] 14 diaphragms

[0153] 16 Second joint

[0154] 18 recesses

[0155] 19 Oxide Layer

[0156] 20 glass substrate

[0157] 22 First joint

[0158] 23 Lower surface

[0159] 24 upper surface

[0160] 26 Cation-deficient layers

[0161] 27 Lower surface

[0162] 28 sidewalls

[0163] 29 inner side

[0164] 30 pad section

[0165] 32 wiring

[0166] 34 piezoelectric elements

[0167] 36 Upper surface

[0168] 37 Pad Outer Periphery

[0169] 38 corner

[0170] 39. Straight line section

[0171] 40 physical quantity sensors

[0172] 50 through hole

[0173] 52 metal film

[0174] 53 Extension

[0175] 54 metal film peripheral part

[0176] 55 lower surface

[0177] 80 Cation

[0178] 820 2- (Oxygen ions)

[0179] 88 Part 1

[0180] 89 Part 2

[0181] 90 recess

[0182] 92 sealed space

[0183] 100 sensor devices

[0184] 150 recess

[0185] 202 mask

[0186] 212 mask

[0187] 214 mask.

Claims

1. A sensor device, characterized in that, include: Semiconductor substrate; Glass substrate; physical quantity sensor; And the pad portion electrically connected to the physical quantity sensor, A recess provided in at least one of the semiconductor substrate and the glass substrate is sealed by joining a first bonding portion in the glass substrate with a second bonding portion in the semiconductor substrate. The physical quantity sensor and the pad portion are disposed in a sealed space sealed by the semiconductor substrate and the glass substrate. The recess has a first recess located on the central side of at least one of the semiconductor substrate and the glass substrate when viewed from above, and a second recess located outside the first recess when viewed from above. The height of the first recess from the surface where the glass substrate and the semiconductor substrate meet is a first height, and the height of the second recess is a second height that is lower than the first height. The pad portion is disposed on the second recess. The glass substrate has a cation-deficient layer in the first bonding portion where the cation concentration is lower than that of the glass substrate.

2. The sensor device as described in claim 1, characterized in that, The semiconductor substrate has an oxide layer of oxygen and an oxide layer of semiconductor contained in the semiconductor substrate in the second bonding portion.

3. The sensor device as described in claim 1 or 2, characterized in that, Viewed from above, the glass substrate has a through hole at the position overlapping with the pad portion. The glass substrate has a metal film disposed on the sidewall of the through hole. The pad portion is formed of metal. The metal film is in contact with the solder pad portion.

4. The sensor device as described in claim 3, characterized in that, The metal film has an extension that extends from the sidewall of the through hole to the lower surface of the glass substrate that contacts the sealing space. The extension is connected to the pad portion.

5. The sensor device as described in claim 4, characterized in that, When viewed from above, the pads are surrounded by the metal film.

6. The sensor device as described in claim 5, characterized in that, The extension includes a peripheral portion of a metal membrane that is in contact with the sealed space. The lower surface of the outer periphery of the metal film is disposed below the upper surface of the pad portion.

7. The sensor device as claimed in claim 4, characterized in that, When viewed from above, the metal film is surrounded by the solder pad portion.

8. The sensor device as claimed in claim 7, characterized in that, The pad portion includes a pad periphery that is in contact with the sealed space. The upper surface of the outer periphery of the pad is positioned above the lower surface of the extension.

9. The sensor device as claimed in any one of claims 4 to 8, characterized in that, The sum of the thickness of the pad portion and the thickness of the extension portion is greater than the height of the sealed space at the position where it overlaps with the pad portion when viewed from above.

10. The sensor device as claimed in claim 9, characterized in that, The distance from the inner side of the glass substrate to the pad portion in the in-plane direction of the semiconductor substrate is greater than the height of the sealing space.

11. The sensor device according to any one of claims 4 to 8, characterized in that, In the in-plane direction of the semiconductor substrate, the distance from the inner side surface of the glass substrate to the pad portion increases from the upper end to the lower end of the inner side surface of the glass substrate.

12. The sensor device as claimed in claim 3, characterized in that, The through hole includes a first portion in which the width of the through hole decreases from the upper end of the through hole downwards, and a second portion in which the width of the through hole decreases from the lower end of the through hole upwards. The width of the first portion at the upper end of the through hole is greater than the width of the second portion at the lower end of the through hole.

13. The sensor device as claimed in any one of claims 4 to 8, characterized in that, The through hole includes a first portion in which the width of the through hole decreases from the upper end of the through hole downwards, and a second portion in which the width of the through hole decreases from the lower end of the through hole upwards. The width of the first portion at the upper end of the through hole is greater than the width of the second portion at the lower end of the through hole.

14. A method for manufacturing a sensor device, characterized in that, The system includes a bonding stage in which anodizing is performed on a semiconductor substrate and a glass substrate, in which a physical quantity sensor is provided and a pad electrically connected to the physical quantity sensor is formed. The bonding stage is a stage in which the recess disposed on at least one of the semiconductor substrate and the glass substrate is sealed by anodizing the first bonding portion in the glass substrate and the second bonding portion in the semiconductor substrate, and is also a stage in which the physical quantity sensor and the pad portion are sealed. Prior to the joining phase, One end of the lower surface of the first junction, on the side of the physical quantity sensor, and the other end, which is positioned further away from the physical quantity sensor than the first end, are positioned away from the upper surface of the semiconductor substrate. The one end and the other end are configured such that, in a direction intersecting the upper surface of the semiconductor substrate, the distance between the upper surface of the semiconductor substrate and the one end is greater than the distance between the upper surface of the semiconductor substrate and the other end. During the bonding stage, after the lower surface of the first bonding portion is rotated toward the semiconductor substrate with the other end as the center, the first bonding portion and the second bonding portion are anodicly bonded.

15. The method for manufacturing the sensor device as described in claim 14, characterized in that, When viewed from above, the glass substrate has a through hole. The glass substrate has a metal film disposed on the sidewall of the through hole. The pad portion is formed of metal. The bonding stage is a stage in which the physical quantity sensor and the pad portion are sealed by anodic bonding of the first bonding portion and the second bonding portion, and the through hole is sealed by using the pad portion.

Images