Shoulder dislocation detection method and device, storage medium and electronic equipment

Abstract

The present disclosure relates to a method and device for detecting dislocation of a crystal line, a storage medium and an electronic device, and belongs to the field of single crystal silicon production. The method comprises: during the production of a single crystal silicon rod by the Czochralski method, obtaining a single crystal silicon rod production image in a preset measurement area at a shoulder stage according to a preset shooting period; and determining whether the crystal line of the single crystal silicon rod is broken according to the single crystal silicon rod production image and the crystal rotation rule of the single crystal silicon rod. By setting a camera and shooting an image of the single crystal silicon rod at the shoulder stage according to a preset shooting period, and according to the image and the rotation rule of the single crystal silicon rod, it can be determined whether the crystal line of the single crystal silicon rod is broken, without manual investigation, thereby reducing labor costs.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the field of single crystal silicon rod generation, in particular, to a method and device for detecting a break in a shoulder, a storage medium and an electronic device. BACKGROUND

[0002] In the production of single crystal silicon rods by the Czochralski method, the shoulder is a crucial link that directly affects the subsequent process. In normal production, the shoulder process may be broken due to various reasons. However, in the related art, the break in the shoulder is detected by on-site staff through manual inspection. Due to the large number of furnace tables watched by on-site staff and the difference in judgment skills, it takes a long time to identify the break in the shoulder and the accuracy is low, and the identification effect cannot always meet the on-site needs. SUMMARY

[0003] To solve the problems in the related art, the present disclosure provides a method and device for detecting a break in a shoulder, a storage medium and an electronic device.

[0004] To achieve the above-mentioned purpose, the first aspect of the present disclosure provides a method for detecting a break in a shoulder, the method comprising:

[0005] In the process of generating a single crystal silicon rod by the single crystal silicon Czochralski method, a single crystal silicon rod generation image in a preset measurement area at a shoulder stage is obtained according to a preset shooting period;

[0006] According to the single crystal silicon rod generation image and the crystal transition rule of the single crystal silicon rod, it is determined whether the crystal line of the single crystal silicon rod is broken.

[0007] Optionally, the determination of whether the crystal line of the single crystal silicon rod is broken according to the single crystal silicon rod generation image and the crystal transition rule comprises:

[0008] The single crystal silicon rod generation image is subjected to image enhancement processing to obtain an aperture image corresponding to the single crystal silicon rod generation image;

[0009] According to the aperture image and the crystal transition rule, it is determined whether the crystal line of the single crystal silicon rod is broken.

[0010] Optionally, the image enhancement processing of the single crystal silicon rod generation image to obtain the aperture image corresponding to the single crystal silicon rod generation image comprises:

[0011] The single crystal silicon rod generation image is subjected to image gamma transformation to obtain the aperture image.

[0012] Optionally, the determination of whether the crystal line of the single crystal silicon rod is broken according to the aperture image and the crystal transition rule comprises:

[0013] determine a counting threshold according to the crystal rotation rule;

[0014] determine whether the crystal line is captured in the single crystal silicon rod generation image acquired in the shooting period corresponding to the aperture image according to the aperture image;

[0015] in a case where it is determined that the crystal line is not captured, increase a counting value of a counter by one;

[0016] in a case where it is determined that the crystal line is captured, reset the counting value of the counter to zero;

[0017] in a case where it is determined that the counting value of the counter is greater than the counting threshold, determine that the crystal line of the single crystal silicon rod is broken.

[0018] Optionally, the determining whether the crystal line is captured in the single crystal silicon rod generation image acquired in the shooting period corresponding to the aperture image according to the aperture image comprises:

[0019] fit a fitting circle corresponding to the aperture image according to the aperture image;

[0020] determine a position where a pixel point on an outermost side of the aperture image is located;

[0021] in a case where the pixel point is on an inner side of the fitting circle or the pixel point overlaps the fitting circle, determine that the crystal line is not captured in the single crystal silicon rod generation image;

[0022] in a case where the pixel point is on an outer side of the fitting circle, determine that the crystal line is captured in the single crystal silicon rod generation image.

[0023] Optionally, the method comprises:

[0024] acquire an overall generation image of the single crystal silicon rod in the shoulder growing stage;

[0025] determine the preset measurement region according to the overall generation image.

[0026] Optionally, the method comprises:

[0027] determine the crystal rotation rule according to the rotation speed of the single crystal silicon rod and the preset period.

[0028] A second aspect of the present disclosure provides a shoulder breaking line detection device, the device comprising:

[0029] an acquisition module, configured to acquire a single crystal silicon rod generation image in a preset measurement region in a shoulder growing stage according to a preset shooting period in a process of generating a single crystal silicon rod by a single crystal silicon Czochralski method;

[0030] The determining module is configured to determine whether the crystal line of the single crystal silicon rod is broken according to the image of the single crystal silicon rod and the crystal rotation rule of the single crystal silicon rod.

[0031] The second aspect of the present disclosure provides a non-transitory computer readable storage medium, which stores a computer program, and the program is executed by a processor to implement the steps of the method in any one of the first aspect of the present disclosure.

[0032] The third aspect of the present disclosure provides an electronic device, comprising:

[0033] a memory storing a computer program;

[0034] a processor configured to execute the computer program in the memory to implement the steps of the method in any one of the first aspect of the present disclosure.

[0035] According to the above technical solution, the camera is arranged to shoot the image of the single crystal silicon rod in the shoulder stage according to the preset shooting cycle, and the crystal line of the single crystal silicon rod can be accurately determined according to the image and the rotation rule of the single crystal silicon rod, without manual investigation, thereby reducing the labor cost.

[0036] Other features and advantages of the present disclosure will be described in detail in the following specific embodiments. BRIEF DESCRIPTION OF DRAWINGS

[0037] The accompanying drawings are included to provide a further understanding of the present disclosure and constitute a part of the specification, and are used together with the following specific embodiments to explain the present disclosure, but do not constitute a limitation on the present disclosure. In the drawings:

[0038] Figure 1 is a flow chart of a shoulder breaking line detection method according to an exemplary embodiment;

[0039] Figure 2 is another flow chart of a shoulder breaking line detection method according to an exemplary embodiment;

[0040] Figure 3 is a schematic diagram of image processing according to an exemplary embodiment;

[0041] Figure 4 is a block diagram of a shoulder breaking line detection device according to an exemplary embodiment;

[0042] Figure 5 is a block diagram of an electronic device according to an exemplary embodiment. DETAILED DESCRIPTION

[0043] The specific embodiments of the present disclosure are described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present disclosure, and are not used to limit the present disclosure.

[0044] Those skilled in the art should understand that the Czochralski method, also known as the Cz method, includes multiple stages for generating a single crystal silicon rod by the single crystal silicon straight pulling method, including a charging stage, a melting stage, a seeding stage, a seeding stage, a shoulder stage, an equal diameter stage, and a tailing stage. The diameter of the single crystal silicon rod begins to increase during the shoulder stage, which is a crucial link.

[0045] During the shoulder stage, the single crystal silicon rod generates multiple crystal lines (also known as edge lines) based on the seed crystal placed during the seeding stage. If the temperature is set incorrectly during the generation process or impurities exist in the molten liquid after melting, the crystal line may break, and the internal atomic arrangement of the generated single crystal silicon rod does not meet the quality requirements of the single crystal silicon rod.

[0046] In related technologies, shoulder line breaking needs to be manually inspected by on-site staff. Due to the large number of furnace tables watched by on-site staff and the difference in judgment skills, it takes a long time to identify shoulder line breaking and the accuracy is low, and the discrimination effect cannot meet the on-site demand.

[0047] To solve the problems in the related art, the present disclosure provides a shoulder line breaking detection method, Figure 1 is a flowchart of a shoulder line breaking detection method according to an example embodiment. The method can be applied to electronic devices with information processing capabilities, such as computers, messaging devices, central control platforms, etc., as shown in Figure 1 As shown, the method includes the following steps:

[0048] S101, during the process of generating a single crystal silicon rod by the single crystal silicon straight pulling method, a single crystal silicon rod generation image in a preset measurement area during the shoulder stage is obtained according to a preset shooting period.

[0049] The camera used to shoot the single crystal silicon rod generation image can be arranged inside the furnace table, or an observation hole can be arranged at a certain position of the furnace table. The camera can shoot the image of the single crystal silicon rod during the generation of the single crystal silicon rod inside the furnace table through the observation hole. The single crystal silicon rod generation image can be a grayscale image or an RGB image, which is not limited by the present disclosure. The preset measurement area can be the position of the outer edge of one quarter or one eighth of the single crystal silicon rod, and the size of the preset measurement area is not limited by the present disclosure. In specific implementation, the number of crystal lines of the single crystal silicon rod and the crystal transition rule can be determined.

[0050] S102, determine whether the crystal line of the single crystal silicon rod is broken according to the single crystal silicon rod generation image and the crystal rotation rule of the single crystal silicon rod.

[0051] It can be understood that during the shoulder process of generating the single crystal silicon rod by the Czochralski method, the single crystal silicon rod and the crucible for containing the silicon melt are rotated at a certain speed, so that the crystal line appears or disappears regularly in the photographed image, and the rule is the crystal rotation rule. Since the single crystal silicon rod generation image is only the preset region of the single crystal silicon rod, whether the crystal line of the single crystal silicon rod is broken can be determined according to the crystal rotation rule and the information in the photographed image.

[0052] In the embodiments of the present disclosure, by setting the camera to photograph the image of the single crystal silicon rod in the shoulder stage according to the preset photographing period, and according to the image and the rotation rule of the single crystal silicon rod, it can be accurately determined whether the crystal line of the single crystal silicon rod is broken, without manual investigation, thereby reducing the labor cost.

[0053] In some optional embodiments, the determining whether the crystal line of the single crystal silicon rod is broken according to the single crystal silicon rod generation image and the crystal rotation rule of the single crystal silicon rod comprises:

[0054] performing image enhancement processing on the single crystal silicon rod generation image to obtain an aperture image corresponding to the single crystal silicon rod generation image;

[0055] determining whether the crystal line of the single crystal silicon rod is broken according to the aperture image and the crystal rotation rule.

[0056] In the present scheme, the aperture image of the single crystal silicon rod can be obtained through image enhancement processing. It can be understood that the aperture image can be understood as the peripheral edge image of the single crystal silicon rod.

[0057] By performing image enhancement processing on the single crystal silicon rod generation image and determining based on the processed aperture image, the present scheme can make the recognition of the single crystal silicon rod image higher while reducing the data amount of the image, reduce the determination difficulty of the algorithm when processing the image by the algorithm, and improve the accuracy of the determination.

[0058] In some possible implementations, the performing image enhancement processing on the single crystal silicon rod generation image to obtain an aperture image corresponding to the single crystal silicon rod generation image comprises:

[0059] performing image gamma transformation on the single crystal silicon rod generation image to obtain the aperture image.

[0060] It should be understood that the gamma transformation is mainly used for correction of the image, and the image with too high or too low gray scale is corrected, and the contrast is enhanced. The transformation formula is to perform multiplication operation on each pixel value of the original image. Compared with other image enhancement algorithms, the gamma transformation has obvious image enhancement effect on the image with low contrast and high overall brightness value.

[0061] By using the scheme, the single crystal silicon rod generation image is processed through gamma transformation, the algorithm of gamma transformation is simple, the processing efficiency is high, and the high-contrast aperture image of the single crystal silicon rod can be quickly and accurately obtained in the implementation scene of high brightness of the scheme.

[0062] In some embodiments, the determining, according to the aperture image and the crystal transition rule, whether the crystal line of the single crystal silicon rod is broken includes:

[0063] determining a counting threshold according to the crystal transition rule;

[0064] determining, according to the aperture image, whether the crystal line is photographed in the single crystal silicon rod generation image obtained in a shooting period corresponding to the aperture image;

[0065] in a case where it is determined that the crystal line is not photographed, increasing a counting value of a counter by one;

[0066] in a case where it is determined that the crystal line is photographed, resetting the counting value of the counter to zero;

[0067] in a case where it is determined that the counting value of the counter is greater than the counting threshold, determining that the crystal line of the single crystal silicon rod is broken.

[0068] For example, according to the crystal transition rule, it is determined that in every four continuous shooting periods, if the crystal line image is not photographed in the first three shooting periods, the crystal line image will be photographed in the fourth shooting period. If the rule is not met, the crystal line is broken, and at this time, the counting threshold can be calibrated to three.

[0069] After setting the counter described in the foregoing, if the crystal line image is not photographed in the first to third shooting periods, the counting value recorded by the counter is three, if the crystal line image is photographed in the fourth shooting period, the counting value recorded by the counter is reset to zero and is less than three, it can be determined that the crystal line of the single crystal silicon rod is not broken, if the crystal line image is still not photographed in the fourth shooting period, the counting value recorded by the counter is increased by one and is equal to four and is greater than three, it can be determined that the crystal line of the single crystal silicon rod is broken.

[0070] By setting the counter to count whether the crystal line exists in the images taken in each period, the existence of the crystal line in the images taken in the shoulder process can be simply and accurately recorded, and whether the crystal line of the single crystal silicon rod is broken can be accurately determined according to the value recorded by the counter, so that the automation of the shoulder breakage detection is realized.

[0071] It can be understood that the counter can be specifically represented as an integer variable in the program, or the counter can also be a logic circuit, and the effect of the counter can be realized by sending a pulse signal to the logic circuit. In some optional embodiments, the counting value of the counter can be displayed through the display module, so that the staff can monitor the counting value of the counter through the counter, and the staff can more intuitively and accurately determine the crystal line maintaining state of the single crystal silicon rod through the counter.

[0072] It can be understood by those skilled in the art that, in the case that the crystal line is not broken, due to the setting of the shooting period, there can be a case that after N continuous shooting periods shoot the crystal line image, M continuous periods cannot shoot the crystal line image. If only one counter is set, the judgment may be wrong, for example, if the crystal rotation law represents that the single crystal silicon rod is shot at the current shooting period when the crystal line is not broken, after four continuous shooting periods do not shoot the crystal line, three continuous shooting periods will shoot the crystal line, and then four continuous shooting periods cannot shoot the crystal line. At this time, the counting threshold can be set to four. If five continuous shooting periods shoot the crystal line, the recording value of the counter is zero, which is less than the counting threshold, and it is judged that the crystal line is not broken. However, in fact, the crystal line may have been broken and displaced at this time, and the crystal line appears at the position where it should not be shot.

[0073] Therefore, in order to avoid the above problems, in some possible embodiments, two counters can also be set, and the first counting threshold and the second counting threshold can be determined according to the crystal rotation law.

[0074] In the case that the crystal line is not shot, the counting value of the first counter is increased by one, and the counting value of the second counter is reset to zero. In the case that the crystal line is shot, the counting value of the first counter is reset to zero, and the counting value of the second counter is increased by one. In the case that the counting value of the first counter is greater than the first counting threshold or the counting value of the second counter is greater than the second counting threshold, it is determined that the crystal line of the single crystal silicon rod is broken.

[0075] By setting two counters to respectively record and count the number of images continuously shot with the crystal line and the number of images continuously shot without the crystal line, the judgment of whether the crystal line is broken can be more accurate, which can adapt to various crystal rotation laws and shooting periods.

[0076] In some embodiments, the determining whether the crystal line is captured in the single crystal silicon rod generated image acquired in the shooting period corresponding to the aperture image comprises:

[0077] fitting a fitting circular ring corresponding to the aperture image according to the aperture image;

[0078] determining a position where a pixel point at an outermost side of the aperture image is located;

[0079] in a case where the pixel point is at an inner side of the fitting circular ring or the pixel point overlaps with the fitting circular ring, determining that the crystal line is not captured in the single crystal silicon rod generated image;

[0080] in a case where the pixel point is at an outer side of the fitting circular ring, determining that the crystal line is captured in the single crystal silicon rod generated image.

[0081] wherein the fitting circular ring can be a circular ring with a pixel width of one fitted with an outer edge of the aperture image, and the pixel point at the outermost side of the aperture image represents a pixel point farthest from a position where a center of the fitting circular ring is located.

[0082] In order to avoid misjudgment, in some possible implementations, the determining that the crystal line is captured in the single crystal silicon rod generated image in the case where the pixel point is at the outer side of the fitting circular ring comprises:

[0083] in the case where the pixel point is at the outer side of the fitting circular ring, calculating a nearest distance from the pixel point to the fitting circular ring, and in a case where the distance is greater than a preset threshold, determining that the crystal line is captured in the single crystal silicon rod generated image.

[0084] Those skilled in the art should understand that, since the generated single crystal silicon rod is an approximate cylinder, the single crystal silicon rod generated image acquired by shooting is an image approximately circular, and the crystal line on the single crystal silicon rod is a protruding part compared with the cylinder.

[0085] By using the present solution, the outer edge of the single crystal silicon rod can be fitted as a circular ring or an arc through the aperture image of the single crystal silicon rod, and when the crystal line exists in the image, the position corresponding to the crystal line will protrude from the fitted circular ring, so that whether the crystal line exists in the aperture image can be determined through the pixel point at the outermost side of the aperture image and the fitted circular ring.

[0086] Optionally, the method comprises:

[0087] acquiring an overall generated image of the single crystal silicon rod in the shoulder stage;

[0088] determining the preset measurement region according to the overall generated image.

[0089] Since the shooting point position is fixed compared to the position of the single crystal silicon rod, the clarity of the single crystal silicon rod at different shooting positions is quite different. In order to obtain a single crystal silicon rod generated image that is easier to process, the scheme is adopted. By the overall generated image of the single crystal silicon rod, the area of the image of the single crystal silicon rod that can be shot by the camera is determined, and the preset measurement area shot by the camera is calibrated according to the overall generated image. The existence of the crystal line in the shot image can be more accurately determined, so that the judgment of whether the crystal line is broken is more accurate.

[0090] Optionally, the method comprises:

[0091] According to the rotation speed of the single crystal silicon rod and the preset period, the crystal rotation rule is determined.

[0092] Since the rotation speed of the single crystal silicon rod may be adjusted by the staff in real time during the generation process of the single crystal silicon rod, at this time, the crystal rotation rule will also change. The scheme is adopted. The crystal rotation rule can be adjusted in time according to the rotation speed of the single crystal silicon rod and the shooting period, so as to avoid the waste of manpower and material resources caused by the production process error due to the judgment error.

[0093] In order to make those skilled in the art better understand the technical solutions provided by the present disclosure, the present disclosure provides another flow chart of a shoulder opening and broken line detection method as shown in Figure 2 , as shown in Figure 2 , the method comprises the steps of:

[0094] S201, obtaining an overall generated image of a single crystal silicon rod.

[0095] The overall generated image can be an image as shown in the 3A image in Figure 3 .

[0096] S202, performing image gamma transformation according to the overall generated image to obtain an overall aperture image.

[0097] The overall aperture image can be an image as shown in the 3B image in Figure 3 . As can be seen from the images 3A and 3B, the contrast of the image after performing image gamma transformation is obviously increased, so that the computer can more clearly distinguish the boundary when processing the image, and the image processing effect is improved.

[0098] S203, determining a preset measurement area according to the overall aperture image.

[0099] The preset measurement area can be the right one-eighth circular arc of the overall aperture image 3B. The clarity of the image at the right one-eighth circular arc can be higher than that of other parts of the overall aperture image, so as to facilitate further processing in the subsequent steps and reduce the difficulty of image processing. For example,Figure 3 The 3C image in FIG. 3C shows that there is a protruding part in the aperture image, which is the image of the crystal line.

[0100] Those skilled in the art should understand that steps S201 to S203 can be performed in advance, and when the method in the embodiment is actually applied, steps S201 to S203 can not be performed.

[0101] S204, generating a single crystal silicon rod image of a preset measurement area of the single crystal silicon rod according to a preset period.

[0102] S205, determining a crystal rotation rule according to the current rotation speed of the single crystal silicon rod and the preset period.

[0103] S206, determining a counting threshold value according to the crystal rotation rule.

[0104] S207, performing image gamma transformation on the single crystal silicon rod image to obtain an aperture image of the current period.

[0105] S208, obtaining a fitting circle according to the aperture image.

[0106] S209, determining whether a crystal line is photographed in the current period according to the aperture image and the fitting circle.

[0107] It can be understood that the computer cannot directly observe the protruding part in the image as the human eye does, so in steps S208 to S209, the fitting circle is obtained by fitting the aperture image, so that the computer can accurately determine whether the image of the crystal line exists in the image based on the aperture image.

[0108] In the case where it is determined that the crystal line is not photographed, steps S210 and S212 are performed; in the case where the crystal line is photographed, steps S211 and S212 are performed.

[0109] S210, the counting value of the counter is incremented by one.

[0110] S211, the counting value of the counter is reset to zero.

[0111] S212, determining whether the counting value of the counter is greater than the counting threshold value.

[0112] In the case where it is determined that the counting value is greater than the counting threshold value, step S213 is performed; in the case where it is determined that the counting value is less than the counting threshold value, step S214 is performed.

[0113] S213, determining that the crystal line of the single crystal silicon rod is broken, and sending a prompt information.

[0114] S214, it is determined that the crystal line of the single crystal silicon rod has not been broken. Then, the method returns to step S204.

[0115] It can be understood that, in the case that the step S212 is not executed when it is determined that the process of the generation of the single crystal silicon rod is completed, the execution of the method can be stopped.

[0116] Based on the same inventive concept, Figure 4 is a block diagram of a shoulder breaking line detection device 40 according to an exemplary embodiment, as shown in the figure, the device 40 comprises: Figure 4

[0117] An acquisition module 41 is configured to acquire a single crystal silicon rod generation image in a preset measurement region in a shoulder stage according to a preset shooting period during the process of generating a single crystal silicon rod by a single crystal silicon Czochralski method.

[0118] A determination module 42 is configured to determine whether a crystal line of the single crystal silicon rod is broken according to the single crystal silicon rod generation image and a crystal rotation rule of the single crystal silicon rod.

[0119] Optionally, the determination module 42 comprises:

[0120] An image enhancement module is configured to perform image enhancement processing on the single crystal silicon rod generation image to obtain an aperture image corresponding to the single crystal silicon rod generation image.

[0121] A first determination submodule is configured to determine whether the crystal line of the single crystal silicon rod is broken according to the aperture image and the crystal rotation rule.

[0122] Optionally, the image enhancement module is specifically configured to:

[0123] Perform image gamma transformation on the single crystal silicon rod generation image to obtain the aperture image.

[0124] Optionally, the first determination submodule is specifically configured to:

[0125] Determine a count threshold value according to the crystal rotation rule.

[0126] Determine whether the single crystal silicon rod generation image acquired in a shooting period corresponding to the aperture image shoots the crystal line according to the aperture image.

[0127] In the case that it is determined that the crystal line is not shot, a count value of a counter is increased by one.

[0128] In the case that it is determined that the crystal line is shot, the count value of the counter is reset to zero.

[0129] In the case that it is determined that the count value of the counter is greater than the count threshold value, it is determined that the crystal line of the single crystal silicon rod is broken.​

[0130] Optionally, the first determining sub-module is further configured to:

[0131] fit a fitting annulus corresponding to the aperture image according to the aperture image;

[0132] determine a position where a pixel point at an outermost side of the aperture image is located;

[0133] in a case where the pixel point is at an inner side of the fitting annulus or the pixel point overlaps with the fitting annulus, determine that the crystal line is not shot in the monocrystalline silicon rod generation image;

[0134] in a case where the pixel point is at an outer side of the fitting annulus, determine that the crystal line is shot in the monocrystalline silicon rod generation image.

[0135] Optionally, the apparatus 40 comprises:

[0136] a second acquiring module configured to acquire a whole generation image of the monocrystalline silicon rod in a shoulder stage;

[0137] a second determining module configured to determine the preset measurement region according to the whole generation image.

[0138] Optionally, the apparatus 40 comprises:

[0139] a third determining module configured to determine the crystal rotation rule according to the rotation speed of the monocrystalline silicon rod and the preset period.

[0140] As to the apparatus in the above embodiments, the specific manners in which various modules perform operations have been described in details in the embodiments about the method, and thus will not be described in details here.

[0141] Figure 5 is a block diagram of an electronic device 500 according to an example embodiment. As shown in Figure 5 the electronic device 500 can include a processor 501 and a memory 502. The electronic device 500 can also include one or more of a multimedia component 503, an input / output (I / O) interface 504, and a communication component 505.

[0142] The processor 501 is configured to control overall operations of the electronic device 500 to complete all or part of the steps of the shoulder dislocation detection method described above. The memory 502 is configured to store various types of data to support operations of the electronic device 500, which can include, for example, instructions for operating any application or method on the electronic device 500, and application-related data, such as a whole generated image, a single crystal silicon rod generated image, a count value, a preset period, a crystal rotation rule, and the like. The memory 502 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as a static random access memory (SRAM), an electrically erasable programmable read-only memory (EEPROM), an erasable programmable read-only memory (EPROM), a programmable read-only memory (PROM), a read-only memory (ROM), a magnetic memory, a flash memory, a magnetic disk, or an optical disk. The multimedia component 503 can include a screen and an audio component. The screen can be, for example, a touch screen, and the audio component is configured to output and / or input audio signals. For example, the audio component can include a microphone configured to receive external audio signals. The received audio signals can be further stored in the memory 502 or transmitted through the communication component 505. The audio component also includes at least one speaker configured to output audio signals. The I / O interface 504 provides an interface between the processor 501 and other interface modules, which can be a keyboard, a mouse, a button, and the like. The buttons can be virtual buttons or physical buttons. The communication component 505 is configured to perform wired or wireless communication between the electronic device 500 and other devices. Wireless communication, such as Wi-Fi, Bluetooth, near field communication (NFC), 2G, 3G, 4G, NB-IOT, eMTC, or other 5G, and the like, or a combination of one or more of them, is not limited herein. Therefore, the communication component 505 can include, for example, a Wi-Fi module, a Bluetooth module, an NFC module, and the like.

[0143] In an exemplary embodiment, the electronic device 500 can be implemented by one or more Application Specific Integrated Circuit (ASIC), Digital Signal Processor (DSP), Digital Signal Processing Device (DSPD), Programmable Logic Device (PLD), Field Programmable Gate Array (FPGA), controller, microcontroller, microprocessor or other electronic elements for executing the above-mentioned shoulder dislocation detection method.

[0144] In another exemplary embodiment, a computer readable storage medium including program instructions is also provided, which, when executed by a processor, implement the steps of the above-mentioned shoulder dislocation detection method. For example, the computer readable storage medium can be the above-mentioned memory 502 including program instructions, and the above-mentioned program instructions can be executed by the processor 501 of the electronic device 500 to complete the above-mentioned shoulder dislocation detection method.

[0145] In another exemplary embodiment, a computer program product is also provided, which contains a computer program capable of being executed by a programmable device, and the computer program has code portions for executing the above-mentioned shoulder dislocation detection method when executed by the programmable device.

[0146] The preferred embodiments of the present disclosure are described in detail above with reference to the accompanying drawings, but the present disclosure is not limited to the specific details in the above-described embodiments. Within the technical concept range of the present disclosure, various simple modifications can be made to the technical solutions of the present disclosure, and these simple modifications all belong to the protection scope of the present disclosure.

[0147] In addition, it should be noted that each specific technical feature described in the above-described specific embodiments can be combined in any appropriate manner without contradiction, and in order to avoid unnecessary repetition, the present disclosure will not further describe various possible combination manners.

[0148] In addition, any combination of various different embodiments of the present disclosure can also be made, as long as it does not deviate from the idea of the present disclosure, and it should also be considered as the disclosed content of the present disclosure.

Claims

1. A method of detecting a shoulder breakage, characterized by, The method comprises: In the process of generating a single crystal silicon rod by a single crystal silicon direct pulling method, a single crystal silicon rod generation image in a preset measurement region at a shoulder placing stage is acquired according to a preset shooting period; According to the single crystal silicon rod generation image and a crystal rotation rule of the single crystal silicon rod, whether a crystal line of the single crystal silicon rod is broken is determined; The determination of whether the crystal line of the single crystal silicon rod is broken according to the single crystal silicon rod generation image and the crystal rotation rule of the single crystal silicon rod comprises: An image enhancement processing is performed on the single crystal silicon rod generation image to obtain an aperture image corresponding to the single crystal silicon rod generation image; According to the aperture image and the crystal rotation rule, whether the crystal line of the single crystal silicon rod is broken is determined; The determination of whether the crystal line of the single crystal silicon rod is broken according to the aperture image and the crystal rotation rule comprises: According to the crystal rotation rule, a count threshold is determined; According to the aperture image, whether the single crystal silicon rod generation image acquired at a shooting period corresponding to the aperture image shoots the crystal line is determined; In a case where it is determined that the crystal line is not shot, a count value of a counter is increased by one; In a case where it is determined that the crystal line is shot, the count value of the counter is reset to zero; In a case where it is determined that the count value of the counter is greater than the count threshold, it is determined that the crystal line of the single crystal silicon rod is broken.

2. The method of claim 1, wherein, The image enhancement processing on the single crystal silicon rod generation image to obtain the aperture image corresponding to the single crystal silicon rod generation image comprises: An image gamma transformation is performed on the single crystal silicon rod generation image to obtain the aperture image.

3. The method of claim 1, wherein, The determination of whether the single crystal silicon rod generation image shoots the crystal line according to the aperture image comprises: According to the aperture image, a fitting circle ring corresponding to the aperture image is fitted; A position where a pixel point at an outermost side of the aperture image is located is determined; In a case where the pixel point is at an inner side of the fitting circle ring or the pixel point overlaps the fitting circle ring, it is determined that the single crystal silicon rod generation image does not shoot the crystal line; In a case where the pixel point is at an outer side of the fitting circle ring, it is determined that the single crystal silicon rod generation image shoots the crystal line.

4. The method according to any one of claims 1 to 3, characterized in that, The method comprises: An overall generation image of the single crystal silicon rod at the shoulder placing stage is acquired; According to the overall generation image, the preset measurement region is determined.

5. The method according to any one of claims 1 to 3, characterized in that, The method comprises: According to a rotation speed of the single crystal silicon rod and a preset period, the crystal rotation rule is determined.

6. A shoulder break detection apparatus characterized by comprising: The device comprises: An acquisition module is configured to acquire, in the process of generating a single crystal silicon rod by a single crystal silicon direct pulling method, a single crystal silicon rod generation image in a preset measurement region at a shoulder placing stage according to a preset shooting period; A determination module is configured to determine, according to the single crystal silicon rod generation image and a crystal rotation rule of the single crystal silicon rod, whether a crystal line of the single crystal silicon rod is broken; The determination module comprises: An image enhancement module is configured to perform an image enhancement processing on the single crystal silicon rod generation image to obtain an aperture image corresponding to the single crystal silicon rod generation image; A first determination submodule is configured to determine, according to the aperture image and the crystal rotation rule, whether the crystal line of the single crystal silicon rod is broken; The first determination submodule is specifically used for: determining a counting threshold according to the crystal growth law; determining whether the crystal line is shot in the monocrystalline silicon rod generation image obtained in a shooting period corresponding to the aperture image according to the aperture image; in a case where it is determined that the crystal line is not shot, increasing a counting value of a counter by one; in a case where it is determined that the crystal line is shot, resetting the counting value of the counter to zero; in a case where it is determined that the counting value of the counter is greater than the counting threshold, determining that the crystal line of the monocrystalline silicon rod is broken.

7. A non-transitory computer-readable storage medium having stored thereon a computer program, characterized in that, The program is executed by the processor to implement the steps of the method in any one of claims 1-5.

8. An electronic device, comprising: comprise: a memory having a computer program stored thereon; a processor configured to execute the computer program in the memory to implement the steps of the method in any one of claims 1-5.

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