A regulated power supply and a voltage regulation control method

Abstract

The present invention discloses a regulated power supply and a voltage regulation control method. By setting a dynamic adjustment module, the dynamic adjustment module can form a dynamic pull-down impedance based on an error amplification signal and / or temperature, and based on the dynamic pull-down impedance, perform a pull-down process on the output voltage. In this way, the output voltage can be pulled down according to the error amplification signal and / or temperature, avoiding excessive floating up of the output voltage, so that the output voltage can be maintained in a stable state.

Description

Technical Field

[0001] The present invention relates to the technical field of power management, and particularly to a regulated power supply and a regulation control method. Background Art

[0002] With the increasing pursuit of low power consumption, the power supply design has been deeply explored in the direction of low power consumption, and its own power consumption has been reduced to the nanoampere level; on the other hand, with the improvement of the low-power design of various applications, the current consumed by the application in the non-working state has been gradually reduced. As the application process gradually deepens from 55nm to 7nm or even 3nm, the requirements for the power supply voltage of the application device are becoming increasingly strict, and it is required that the power supply voltage (i.e., the output voltage of the regulated power supply) does not float up under various loads, otherwise it will cause the chip life to become shorter or even damaged.

[0003] However, due to the improvement of the process technology, the leakage characteristics of the device have gradually increased. For example, at room temperature, the leakage is relatively small, but as the temperature increases, the leakage characteristics increase sharply. Since the load is extremely low in the low-power scenario, the output voltage cannot be maintained in a constant state and gradually floats up.

[0004] Therefore, how to ensure that the output voltage is maintained in a stable state is a technical problem that needs to be solved urgently by those skilled in the art. Summary of the Invention

[0005] Embodiments of the present invention provide a regulated power supply and a regulation control method to ensure that the output voltage is maintained in a stable state.

[0006] In a first aspect, embodiments of the present invention provide a regulated power supply, including: an error amplification module, a power output module, and a dynamic adjustment module;

[0007] The error amplification module is configured to: determine an error amplification signal according to the output voltage and a preset reference voltage;

[0008] The power output module is configured to: output the output voltage;

[0009] The dynamic adjustment module is electrically connected to the error amplification module and the power output module respectively, and the dynamic adjustment module is configured to: form a dynamic pull-down impedance according to the error amplification signal and / or temperature, and perform a pull-down process on the output voltage based on the dynamic pull-down impedance.

[0010] In a second aspect, embodiments of the present invention provide a regulation control method, including:

[0011] The error amplification module determines an error amplification signal according to the output voltage and a preset reference voltage, and sends it to the power output module and the dynamic adjustment module respectively;

[0012] The power output module outputs the output voltage;

[0013] The dynamic adjustment module forms a dynamic pull-down impedance according to the error amplification signal and / or temperature, and based on the dynamic pull-down impedance, performs a pull-down process on the output voltage.

[0014] The beneficial effects of the present invention are as follows:

[0015] A voltage stabilizing power supply and a voltage stabilizing control method provided by an embodiment of the present invention, through the setting of the dynamic adjustment module, enable the dynamic adjustment module to form a dynamic pull-down impedance based on the error amplification signal and / or temperature, and based on the dynamic pull-down impedance, perform a pull-down process on the output voltage; in this way, the output voltage can be pulled down according to the error amplification signal and / or temperature, avoiding excessive floating of the output voltage, so that the output voltage can be maintained in a stable state. Description of the Drawings

[0016] Figure 1 It is a schematic structural diagram of a voltage stabilizing power supply provided by an embodiment of the present invention;

[0017] Figure 2 It is a schematic structural diagram of another voltage stabilizing power supply provided by an embodiment of the present invention;

[0018] Figure 3 It is a schematic structural diagram of yet another voltage stabilizing power supply provided by an embodiment of the present invention;

[0019] Figure 4 It is a schematic structural diagram of still another voltage stabilizing power supply provided by an embodiment of the present invention;

[0020] Figure 5 It is a schematic structural diagram of still another voltage stabilizing power supply provided by an embodiment of the present invention;

[0021] Figure 6 It is a schematic structural diagram of an error amplifier provided by an embodiment of the present invention;

[0022] Figure 7 It is a flowchart of a voltage stabilizing control method provided by an embodiment of the present invention. Detailed Embodiments

[0023] Next, in conjunction with the drawings, the detailed embodiments of a voltage stabilizing power supply and a voltage stabilizing control method provided by an embodiment of the present invention will be described in detail. It should be noted that the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0024] First, it should be noted that taking A and / or B as an example, the meaning represented is: at least one of A and B.

[0025] Secondly, the inventor found in the research that the current voltage stabilizer generally includes: an error amplification module and a power output module. Among them, the error amplification module is electrically connected to the power output module. The function of the error amplification module is: to determine an error amplification signal according to the output voltage and the reference voltage; the function of the power output module is: to control the output of the output voltage according to the error amplification signal.

[0026] For this type of voltage stabilizer, if the load becomes smaller or no-load at room temperature, it will cause the output voltage to float upward. If this upward floating is not suppressed, the output voltage will float upward excessively, resulting in damage to the device.

[0027] Moreover, when this type of voltage stabilizer is applied to a light-load scenario, if the temperature of the environment where the voltage stabilizer is located increases, the leakage current in the voltage stabilizer will increase. Due to the light-load scenario, it will cause the output voltage to rise, resulting in damage to the device.

[0028] Based on this, the embodiment of the present invention provides a voltage stabilizer for maintaining the output voltage in a stable state and avoiding excessive upward floating of the output voltage.

[0029] It should be noted that in the embodiment of the present invention, the meanings represented by "rise" and "float upward" are the same, and the two can be used interchangeably.

[0030] Specifically, the embodiment of the present invention provides a voltage stabilizer, as Figure 1 shown, which may include: an error amplification module 10, a power output module 20, and a dynamic adjustment module 30;

[0031] The error amplification module 10 is used for: determining an error amplification signal (i.e., Vf) according to the output voltage (i.e., Vout) and the preset reference voltage (i.e., Vref);

[0032] The power output module 20 is used for: outputting the above-mentioned output voltage Vout;

[0033] The dynamic adjustment module 30 is electrically connected to the error amplification module 10 and the power output module 20 respectively. The dynamic adjustment module 30 is used for: forming a dynamic pull-down impedance according to the error amplification signal Vf and / or temperature, and performing a pull-down process on the output voltage Vout based on the dynamic pull-down impedance.

[0034] By setting the dynamic adjustment module, the dynamic adjustment module can form a dynamic pull-down impedance based on the error amplification signal and / or temperature, and based on the dynamic pull-down impedance, perform a pull-down process on the output voltage; in this way, the output voltage can be pulled down according to the error amplification signal and / or temperature, avoiding excessive floating up of the output voltage, so that the output voltage can be maintained in a stable state.

[0035] Optionally, in the embodiment of the present invention, for the power output module 20, in order to output the output voltage Vout, the specific implementation manner may include:

[0036] As Figure 1 shown, according to the error amplification information Vf, output the above output voltage Vout;

[0037] Of course, other ways that can implement the output of the output voltage Vout may also be used, which are not limited herein, as long as the output voltage Vout can be output, it belongs to the protection scope of the embodiment of the present invention.

[0038] Optionally, in the embodiment of the present invention, the functions of the error amplification module may include:

[0039] According to the difference between the output voltage and the reference voltage, the error amplification voltage (i.e., the error amplification signal) can be determined;

[0040] Among them, when the output voltage increases, the error amplification voltage decreases, and when the output voltage decreases, the error amplification voltage increases. That is to say, the output voltage and the error amplification voltage are in a negative correlation relationship; of course, the output voltage and the error amplification voltage may also be in a positive correlation relationship, and the working mode of the error amplification module can be set according to actual needs, which is not limited herein.

[0041] Optionally, in the embodiment of the present invention, as Figure 2 shown, the dynamic adjustment module 30 includes a control unit 31 and a pull-down unit 32;

[0042] The control unit 31 is electrically connected to the error amplification module 10 and the pull-down unit 32 respectively, and the pull-down unit 32 is also electrically connected to the power output module 20;

[0043] The control unit 31 is used for:

[0044] When it is determined according to the error amplification signal Vf that the output voltage Vout increases and / or the temperature increases, control the impedance of the pull-down unit 32 to decrease, so that the pull-down unit 32 performs a pull-down process on the output voltage Vout.

[0045] Thus, by setting the control unit and the pull-down unit, the impedance of the pull-down unit can be dynamically adjusted by the control unit, so that when the output voltage increases and / or the temperature increases, the impedance of the pull-down unit is controlled to decrease, and further the pull-down unit can perform a pull-down process on the output voltage, avoiding excessive floating of the output voltage and maintaining the output voltage in a stable state.

[0046] Moreover, in the embodiment of the present invention, not only can the pull-down process be triggered based on the output voltage, but also the pull-down process can be triggered based on the temperature, thereby avoiding the floating of the output voltage caused by the lack of pull-down process when the temperature increases.

[0047] It should be noted that, optionally, in the embodiment of the present invention, the temperature can be understood as:

[0048] the temperature of the environment where the regulated power supply is located;

[0049] and / or, the temperature increase caused by the heat generation of the load in the regulated power supply device.

[0050] Optionally, in the embodiment of the present invention, as Figure 2 shown, the control unit 31 includes: a driving sub-unit 31a and a control sub-unit 31b;

[0051] The output end of the driving sub-unit 31a is electrically connected to the control sub-unit 31b, and the driving sub-unit 31a is used for: transmitting an internal bias voltage (i.e., Vs) to the control sub-unit 31b;

[0052] The control sub-unit 31b is also respectively electrically connected to the pull-down unit 32 and the error amplification module 10, and the control sub-unit 31b is used for:

[0053] controlling the control voltage (i.e., Vk) output to the pull-down unit 32 according to the internal bias voltage Vs and the error amplification signal Vf; wherein, when it is determined according to the error amplification signal Vf that the output voltage Vout increases and / or the temperature increases, the control voltage Vk is used for: controlling the impedance of the pull-down unit 32 to decrease.

[0054] Among them, the internal bias voltage Vs can be understood as:

[0055] a bias voltage generated within the control unit, which is convenient for the control sub-unit to output a control voltage; and, this internal bias voltage is essentially similar to the bias voltage outside the regulated power supply.

[0056] It should be noted that, optionally, the control voltage can be a continuous analog signal, that is to say, the control sub-unit can always output a control voltage to the pull-down unit, but only the magnitude of the control voltage output according to the internal bias voltage and the error amplification signal will be different.

[0057] In this way, through the combined action of the driving subunit and the control subunit, the control voltage output to the pull-down unit can be controlled, and further the impedance of the pull-down unit can be controlled. When the output voltage increases and / or the temperature increases, by controlling the control voltage, the impedance of the pull-down unit is controlled to decrease, so as to realize the function of the control unit to dynamically adjust the impedance of the pull-down unit.

[0058] Optionally, in the embodiment of the present invention, as Figure 2 shown, the input end of the driving subunit 31a is electrically connected to the ground terminal GND, and is specifically configured to: output an internal bias voltage Vs to the control subunit 31b according to the ground signal provided by the ground terminal GND; or,

[0059] As Figure 3 shown, the control unit 31 further includes: a voltage mirror subunit 31c electrically connected to the input end of the driving subunit 31a;

[0060] The voltage mirror subunit 31c is configured to: perform mirror processing on the error amplification signal Vf to obtain a mirror voltage (i.e., Vx), and transmit the mirror voltage Vx to the driving subunit 31a;

[0061] The driving subunit 31a is specifically configured to: output an internal bias voltage Vs to the control subunit 31b according to the mirror voltage Vx.

[0062] It should be noted that when the voltage mirror subunit performs mirror processing on the error amplification signal, it can be understood that:

[0063] Perform mirror processing on the voltage value of the error amplification signal to obtain a mirror voltage with the same voltage value as the error amplification signal;

[0064] And, in specific implementation, the voltage mirror subunit does not necessarily need to have an electrical connection relationship with the error amplification module, and only needs to mirror the voltage value of the error amplification signal output by the error amplification module.

[0065] That is to say, for the driving subunit, if it is to output an internal bias voltage, there are two implementation methods:

[0066] 1. Output based on the ground signal;

[0067] Through this implementation method, it is beneficial to simplify the structure of the control unit and even the dynamic adjustment module, thereby facilitating the simplification of the structure of the regulated power supply, simplifying the manufacturing process, and reducing the manufacturing cost.

[0068] 2. Output based on the mirror voltage.

[0069] Through this implementation method, the error amplified signal can be directly mirrored to the driving subunit, improving the pull-up strength obtained based on the internal bias voltage in the control subunit, enabling the pull-down unit to start the pull-down process earlier, thereby improving the response speed.

[0070] Optionally, in the embodiment of the present invention, as Figure 4 and Figure 5 shown, the driving subunit 31a includes: a first transistor MN1 and a second transistor MP2;

[0071] The gate of the first transistor MN1 is electrically connected to the ground terminal GND or the voltage mirror subunit 31c, the source is electrically connected to the ground terminal GND, and the drain is electrically connected to the gate and drain of the second transistor MP2 and the control subunit 31b respectively;

[0072] The source of the second transistor MP2 is electrically connected to the power supply signal terminal VIN.

[0073] Among them, the first transistor can be an N-type transistor, and the second transistor can be a P-type transistor, as Figure 4 and Figure 5 shown; alternatively, it can also be set as: the first transistor can be a P-type transistor, and the second transistor can be an N-type transistor, not shown; specifically, it can be set according to actual needs and is not limited herein.

[0074] Of course, specifically, the structure of the driving subunit is not limited to Figure 4 and Figure 5 shown, and can also be other structures that can implement the function of the driving subunit, which is not limited herein.

[0075] In this way, through the setting of two transistors, the function of the driving subunit can be realized, which is beneficial to simplifying the structure of the control unit and even the dynamic adjustment module, and further beneficial to simplifying the structure of the regulated power supply.

[0076] Optionally, in the embodiment of the present invention, as Figure 5 shown, the voltage mirror subunit 31c includes: a third transistor MN3, a fourth transistor MN4, and a fifth transistor MP5;

[0077] The gate of the third transistor MN3 is electrically connected to the first bias voltage signal terminal VB1, the source is electrically connected to the ground terminal GND, and the drain is electrically connected to the source of the fourth transistor MN4;

[0078] The gate of the fourth transistor MN4 is electrically connected to the second bias voltage signal terminal VB2, and the drain is electrically connected to the driving subunit 31a and the drain of the fifth transistor MP5 respectively;

[0079] The gate of the fifth transistor MP5 is electrically connected to the third bias signal terminal VB3, and the source is electrically connected to the power supply signal terminal VIN.

[0080] Among them, the third transistor and the fourth transistor can both be N-type transistors, and the fifth transistor can be a P-type transistor, as Figure 5 shown; alternatively, the third transistor and the fourth transistor can both be P-type transistors, and the fifth transistor can be an N-type transistor, not shown; specifically, it can be set according to actual needs and is not limited here.

[0081] Of course, specifically, the structure of the voltage mirror sub-unit is not limited to Figure 5 shown, and it can also be other structures that can implement the function of the voltage mirror sub-unit, which is not limited here.

[0082] In this way, through the setting of three transistors, the function of the voltage mirror sub-unit can be realized, which is beneficial to simplifying the structure of the control unit and even the dynamic adjustment module, and further beneficial to simplifying the structure of the regulated power supply.

[0083] Optionally, in the embodiments of the present invention, the first bias voltage signal terminal, the second bias voltage signal terminal, and the third bias voltage signal terminal can be signal terminals pre-configured in the power supply, and the voltages of the signals provided by these three signal terminals can be set according to actual needs and are not limited here.

[0084] Optionally, in the embodiments of the present invention, as Figure 4 and Figure 5 shown, the control sub-unit 31b includes: a pull-up circuit b1 and a pull-down circuit b2;

[0085] The pull-up circuit b1 is electrically connected to the drive sub-unit 31a, the pull-down circuit b2, and the input terminal of the pull-down unit 32 respectively, and the pull-down circuit b2 is also electrically connected to the error amplification module 10 and the input terminal of the pull-down unit 32 respectively;

[0086] The pull-down circuit b2 is used for: pulling down the first control voltage Vk1 output to the input terminal of the pull-down unit 32 according to the error amplification signal Vf;

[0087] The pull-up circuit b1 is used for: pulling up the second control voltage Vk2 output to the input terminal of the pull-down unit 32 according to the internal bias voltage Vs, so that under the combined action of the pull-up circuit b1 and the pull-down circuit b2, the output control voltage Vk is controlled; among them, the control voltage Vk is: the sum of the first control voltage Vk1 and the second control voltage Vk2.

[0088] That is to say, the pull-up circuit can determine the pull-up ability according to the internal bias voltage, and the pull-down circuit can determine the pull-down ability according to the error amplification signal.

[0089] Moreover, since both the pull-up circuit and the pull-down circuit are electrically connected to node P0 (i.e., the input terminal of the pull-down unit), the pull-up circuit can pull up the voltage of node P0 based on the determined pull-up ability, so that the second control voltage Vk2 output to the input terminal of the pull-down unit increases;

[0090] while the pull-down circuit can pull down the voltage of node P0 based on the determined pull-down ability, so that the first control voltage Vk1 output to the input terminal of the pull-down unit decreases;

[0091] Therefore, the combined effect of pulling up and pulling down is the control of the voltage of node P0, that is, the control voltage Vk finally output to the input terminal of the pull-down unit is controlled, so that the finally output control voltage Vk is the sum of the first control voltage Vk1 and the second control voltage Vk2, that is, the combined effect of the first control voltage Vk1 and the second control voltage Vk2 on node P0 is the control voltage Vk.

[0092] In short, through the cooperative action of the pull-up circuit and the pull-down circuit, the control voltage output to the input terminal of the pull-down unit can be controlled, and then the impedance of the pull-down unit can be adjusted through the control voltage to form a dynamic pull-down impedance. Furthermore, based on the dynamic pull-down impedance, the output voltage can be pulled down to avoid the floating high of the output voltage and maintain the stability of the output voltage.

[0093] Based on this, optionally, in the embodiment of the present invention, the pull-down circuit is specifically used for:

[0094] When it is determined according to the error amplification signal that the output voltage increases, stop pulling down the first control voltage output to the input terminal of the pull-down unit;

[0095] When it is determined according to the error amplification signal that the output voltage does not increase, pull down the first control voltage output to the input terminal of the pull-down unit.

[0096] Specifically, as shown in Figure 4 For the pull-down circuit b2:

[0097] Taking the output voltage Vout increasing and the voltage value of the error amplification signal Vf decreasing as an example, then:

[0098] Based on the function of the error amplification module 10, when the output voltage Vout increases, the voltage value of the error amplification signal Vf decreases, so it can be determined whether the output voltage Vout increases according to the error amplification signal Vf;

[0099] If it increases, in order to maintain the stability of the output voltage Vout, the pull-down unit 32 needs to perform a pull-down process on the output voltage Vout. Therefore, at this time, the control voltage Vk output to the pull-down unit 32 can be greater than or equal to the first preset threshold, that is, a relatively large control voltage Vk can be output to the pull-down unit 32, so that the impedance of the pull-down unit 32 decreases; since the function of the pull-down circuit b2 is to pull down the first control voltage Vk1, the pull-down circuit b2 needs to be in a non-working state at this time, that is, the pull-down circuit b2 needs to stop pulling down the first control voltage Vk1 output to the input end of the pull-down unit 32.

[0100] If it does not increase, it means that the pull-down unit 32 does not need to perform a pull-down process on the output voltage Vout at present. Therefore, at this time, the control voltage Vk output to the pull-down unit 32 can be less than the first preset threshold, that is, a relatively small control voltage Vk can be output to the pull-down unit 32, so that the impedance of the pull-down unit 32 does not decrease, or rather, the pull-down unit 32 can have a relatively high impedance; since the function of the pull-down circuit b2 is to pull down the first control voltage Vk1, the pull-down circuit b2 needs to be in a working state at this time, that is, the pull-down circuit b2 needs to pull down the first control voltage Vk1 output to the input end of the pull-down unit 32.

[0101] For the pull-up circuit b1:

[0102] Since the pull-up circuit b1 works according to the internal bias voltage Vs, regardless of whether the output voltage Vout increases or not, the pull-up circuit b1 can always be in a working state to cooperate with the pull-down circuit b2 to control the control voltage Vk output to the input end of the pull-down unit 32.

[0103] In this way, the pull-down circuit can determine whether to work according to the error amplification signal, which is beneficial to cooperating with the pull-up circuit to control the control voltage output to the input end of the pull-down unit, so that the output voltage is maintained in a stable state and the output voltage is prevented from floating too high.

[0104] Of course, optionally, in the embodiment of the present invention, the pull-down circuit is specifically used for:

[0105] When it is determined according to the error amplification signal that the increase value of the output voltage is greater than the preset threshold (in order to distinguish from the first preset threshold in the above content, this preset threshold can also be called the second preset threshold, and the preset threshold and the second preset threshold mentioned in the following content have the same meaning), stop pulling down the first control voltage output to the input end of the pull-down unit.

[0106] Among them, the preset threshold can be set according to actual needs and is not limited here.

[0107] That is to say, in specific implementation, since the error amplification signal is determined by the error amplification module, and the error amplification module is used to determine the error amplification signal according to the output voltage and the reference voltage, the increase of the output voltage can be determined based on the error amplification signal;

[0108] If the output voltage increases, the pull-down circuit stops working, which will cause the pull-down circuit to frequently switch between the working state (i.e., the state of performing pull-down processing) and the non-working state (i.e., the state of not performing pull-down processing), resulting in increased power consumption of the regulated power supply and increased loss of the pull-down circuit;

[0109] If the pull-down circuit stops working when the increase value of the output voltage is greater than the preset threshold, the switching times of the pull-down circuit between the working state and the non-working state can be reduced, the loss of the pull-down circuit can be reduced, and the power consumption of the regulated power supply can be reduced at the same time.

[0110] Optionally, in the embodiment of the present invention, as Figure 4 and Figure 5 shown, the pull-down circuit b2 includes: a sixth transistor MN6 and a seventh transistor MN7, and the pull-up circuit b1 includes an eighth transistor MP8;

[0111] The gate of the sixth transistor MN6 is electrically connected to the first bias voltage signal terminal VB1, the source is electrically connected to the ground terminal GND, and the drain is electrically connected to the source of the seventh transistor MN7;

[0112] The gate of the seventh transistor MN7 is electrically connected to the error amplification module 10, and the drain is electrically connected to the input terminal of the pull-down unit 32 and the drain of the eighth transistor MP8 respectively;

[0113] The gate of the eighth transistor MP8 is electrically connected to the driving sub-unit 31a, and the source is electrically connected to the power supply signal terminal VIN;

[0114] Wherein, the conduction threshold of the seventh transistor MN7 is determined according to the preset threshold.

[0115] Specifically, in the embodiment of the present invention, the sixth transistor and the seventh transistor can both be N-type transistors, and the eighth transistor is a P-type transistor, as Figure 4 and Figure 5 shown; or, the sixth transistor and the seventh transistor can both be P-type transistors, and the eighth transistor is an N-type transistor, not shown; specifically, it can be set according to actual needs and is not limited herein.

[0116] Moreover, the specific structures of the pull-up circuit and the pull-down circuit are not limited to Figure 4 and Figure 5 shown, and can also be other structures that can implement the functions of the pull-up circuit and the pull-down circuit, which are not limited herein.

[0117] For example, taking the seventh transistor as an N-type transistor and assuming that the output voltage increases while the voltage value of the error amplification signal decreases, the conduction threshold of the seventh transistor can be set to a relatively small value. Then:

[0118] When the output voltage increases, the voltage value of the error amplification signal decreases. Since the conduction threshold of the seventh transistor is relatively small, the seventh transistor will turn off only when the voltage value of the error amplification signal decreases to less than the conduction threshold. That is, when the increase value of the output voltage is greater than the preset threshold, the seventh transistor will turn off, and then the pull-down circuit stops pulling down the voltage of node P0.

[0119] When the voltage value of the error amplification signal is greater than or equal to the conduction threshold, that is, when the increase value of the output voltage is less than or equal to the preset threshold, the seventh transistor is in the conducting state. Therefore, the pull-down circuit can still pull down the voltage of node P0.

[0120] Therefore, there is a certain corresponding relationship between the conduction threshold and the preset threshold.

[0121] That is to say, since the gate of the seventh transistor is electrically connected to the error amplification module, and the error amplification signal output by the error amplification module is related to the output voltage, the conduction state of the seventh transistor is affected by the output voltage, so that the conduction threshold of the seventh transistor can be determined according to the preset threshold.

[0122] For example: assuming that the conduction threshold of an ordinary switching transistor is 0.5V, the conduction threshold of the seventh transistor can be set to 0.2V, and the preset threshold can be set to 20mV. At this time:

[0123] If the increase value of the output voltage exceeds 20mV, the gate voltage of the seventh transistor is less than 0.2V, causing the seventh transistor to turn off and stop pulling down the voltage of node P0.

[0124] In this way, the conduction threshold of the seventh transistor can be set according to the preset threshold, so as to reduce the switching times between the working state and the non-working state of the pull-down circuit on the basis of realizing the function of the pull-down circuit, reduce the loss of the pull-down circuit, and at the same time reduce the power consumption of the regulated power supply.

[0125] Optionally, in the embodiment of the present invention, as Figure 4 and Figure 5 shown, the pull-down unit 32 includes: a ninth transistor MN9;

[0126] The gate of the ninth transistor MN9 is electrically connected to the control unit 31, the source is electrically connected to the ground terminal GND, and the drain is electrically connected to the output terminal of the power output module 20.

[0127] Among them, the ninth transistor can be an N-type transistor or a P-type transistor, which can be specifically set according to actual needs and is not limited herein.

[0128] Specifically, in the embodiments of the present invention, the specific structure of the pull-down unit is not limited to Figure 4 and Figure 5 shown, and can also be other structures that can implement the function of the pull-down unit, which is not limited herein.

[0129] In this way, the function of the pull-down unit can be realized only by setting one transistor, which is beneficial to simplifying the structure of the dynamic adjustment module, thereby simplifying the structure of the regulated power supply and reducing the manufacturing cost.

[0130] Optionally, in the embodiments of the present invention, as Figure 4 and Figure 5 shown, the power output module 20 includes a power output transistor MPg;

[0131] The ratio of the area of the channel layer of the power output transistor MPg to that of the eighth transistor MP8 is k;

[0132] Among them, k is determined according to the ratio of the current passing through the sixth transistor MN6 to the leakage current of the power output transistor MPg.

[0133] For example, based on the current passing through the sixth transistor, it can be determined that the pull-down ability of the sixth transistor is 2 nA, and when the leakage current of the power output transistor at 80 °C is 560 nA, k is 560 / 2 = 280. Therefore, the ratio of the area of the channel layer of the power output transistor to that of the eighth transistor is 280.

[0134] Of course, the value of k is not limited to 280, and only this is taken as an example for illustration here.

[0135] It should be noted that in actual situations, taking the sixth transistor MN6 and the seventh transistor MN7 both being N-type transistors and the eighth transistor MP8 being a P-type transistor as an example, combined with Figure 4 shown, at room temperature, the gate of the first transistor MN1 is grounded, so no current passes through the first transistor MN1. The second transistor MP2 and the eighth transistor MP8 are mirror images of each other, so the current of the second transistor MP2 can be mirrored onto the eighth transistor MP8, making the eighth transistor MP8 operate in the subthreshold region. Consequently, a very small current flows through the eighth transistor MP8, resulting in a small leakage current on the eighth transistor MP8 and a relatively weak pull-up ability for the voltage of node P0.

[0136] Moreover, when the temperature rises, due to manufacturing process issues, the leakage current of the eighth transistor MP8 will increase, thereby increasing the pull-up strength for the voltage of node P0.

[0137] In this way, by setting the channel layer areas of the power output transistor and the eighth transistor, the leakage state of the power output transistor can be reflected by the eighth transistor. Since the leakage state is related to temperature and the leakage current increases with the increase of temperature, it can be used to detect the current temperature. When the current temperature rises, the pull-up ability of the pull-up circuit can be improved due to the increase of the leakage current of the eighth transistor. When the temperature is normal and the output voltage does not float high, the pull-up strength is weak, and the pull-down strength of the pull-down circuit is greater than the pull-up strength of the pull-up circuit, so that the pull-down unit does not perform the pull-down process and maintains the current output voltage.

[0138] Moreover, since the ratio of the channel layer area of the power output transistor to that of the eighth transistor is k, the channel layer area of the eighth transistor is equivalent to reducing the channel layer area of the power output transistor by k times. The leakage state of the power output transistor can be reflected by a transistor with a smaller area, thus reducing the area consumption.

[0139] Optionally, in the embodiment of the present invention, as Figure 4 and Figure 5 shown, the power output module 20 includes: a tenth transistor MN10, an eleventh transistor MP11, and a power output transistor MPg;

[0140] The gate of the tenth transistor MN10 is electrically connected to the error amplification module 10, the source is electrically connected to the ground terminal GND, and the drain is electrically connected to the gates of the eleventh transistor MP11 and the source, and the gate of the power output transistor MPg;

[0141] The drain of the eleventh transistor MP11 is electrically connected to the power supply signal terminal VIN;

[0142] The source of the power output transistor MPg is electrically connected to the power supply signal terminal VIN, and the drain is electrically connected to the dynamic adjustment module 20;

[0143] The error amplification module 10 includes: an error amplifier 11.

[0144] Among them, the tenth transistor can be an N-type transistor, and the eleventh transistor and the power output transistor can both be P-type transistors, as Figure 4 and Figure 5 shown; or, the tenth transistor can be a P-type transistor, and the eleventh transistor and the power output transistor can both be N-type transistors; specifically, it can be set according to actual needs and is not limited here.

[0145] Specifically, in the embodiment of the present invention, the structures of the power output module and the error amplification module are not limited to Figure 4 and Figure 5As shown, it can also be other structures that can implement the functions of the power output module and the error amplification module, which are not limited herein.

[0146] In this way, the function of the power output module can be realized by multiple transistors, which is beneficial to simplifying the structure of the voltage regulator power supply and reducing the manufacturing cost of the voltage regulator power supply.

[0147] Moreover, when the function of the error amplification module is realized by the error amplifier, the error amplification signal output by the error amplifier can be reused; and when the traditional voltage regulator power supply only includes the power output module and the error amplification module, only a small number of devices need to be added to realize the stable output of the output voltage, avoiding the excessive floating high of the output voltage, which is beneficial to reducing the area occupation and power consumption, and providing an effective reference for the integrated design of the circuit.

[0148] In addition, based on the principle of reusing the existing error amplification signal, it can be applied to various power supplies and has a wide application range.

[0149] Furthermore, in the embodiments of the present invention, by adopting the error amplification signal and temperature, a dynamic pull-down resistor can be formed. At the same time, under normal temperature conditions, no additional power consumption is required or the power consumption is extremely low, and the occupied area is extremely small, so as to keep the output voltage in a stable state.

[0150] It should be noted that taking Figure 4 as shown as an example, the connection relationship between the tenth transistor MN10, the eleventh transistor MP11 and the power output transistor MPg is denoted as connection relationship 1, and the connection relationship between the first transistor MN1, the second transistor MP2 and the eighth transistor MP8 is denoted as connection relationship 2, where connection relationship 1 and connection relationship 2 are basically the same;

[0151] If the structure composed of the first transistor MN1, the second transistor MP2 and the eighth transistor MP8 is denoted as structure 1, and the structure composed of the tenth transistor MN10, the eleventh transistor MP11 and the power output transistor MPg is denoted as structure 2, then structure 1 can be regarded as a replicated and enlarged structure of structure 2. Furthermore, the leakage state of the power output transistor MPg can be reflected by the eighth transistor MP8, so that the light load state can be captured.

[0152] Optionally, in the embodiments of the present invention, as Figure 6 shown, the error amplifier may include: the twelfth transistor MP12, the thirteenth transistor MP13, the fourteenth transistor MP14, the fifteenth transistor MP15, the sixteenth transistor MN16, the seventeenth transistor MN17, the eighteenth transistor MN18, the nineteenth transistor MN19 and the twentieth transistor MN20; among them, the connection relationship of these transistors can be seen in Figure 6 shown.

[0153] Moreover, the twelfth to fifteenth transistors may all be P-type transistors, and the sixteenth to twentieth transistors may all be N-type transistors, as Figure 6 shown; or, the twelfth to fifteenth transistors may all be N-type transistors, and the sixteenth to twentieth transistors may all be P-type transistors, not shown; specifically, it can be set according to actual needs and is not limited herein.

[0154] Of course, the specific structure of the error amplifier is not limited to Figure 6 shown, and it may also be other structures that can implement the function of the error amplifier, which is not limited herein.

[0155] Optionally, in the embodiment of the present invention, as Figure 4 and Figure 5 shown, the regulated power supply further includes: an output adjustment module 40;

[0156] The output adjustment module 40 includes: a compensation capacitor Cm, a storage capacitor C L , a first resistor R1, a second resistor R2, and an application load R L ;

[0157] Among them, the first end of the compensation capacitor Cm is electrically connected to the error amplifier 10, and the second end is electrically connected to the output end of the power output module 20;

[0158] The first end of the storage capacitor C L is electrically connected to the output end of the power output module 20, and the second end is electrically connected to the ground terminal GND;

[0159] The first end of the first resistor R1 is electrically connected to the output end of the power output module 20, and the second end is electrically connected to the first end of the second resistor R2;

[0160] The second end of the second resistor R2 is electrically connected to the ground terminal GND;

[0161] The application load R L is connected between the output end of the power output module 20 and the ground terminal GND.

[0162] Specifically, when the structure of the error amplifier is as Figure 6 shown, the first end of the compensation capacitor Cm may but is not limited to be electrically connected to the node P1.

[0163] In this way, through the setting of the output adjustment module 40, the output voltage can be adjusted and stored, so that the regulated power supply can continuously output voltage.

[0164] Next, the working process of the regulated power supply provided by the embodiment of the present invention will be described in conjunction with specific embodiments.

[0165] Embodiment: Combining Figure 4 As shown, it is assumed that the function of the error amplifier is that when the output voltage increases, the voltage value of the error amplification signal decreases.

[0166] 1. At room temperature, if the output voltage Vout does not increase, the tenth transistor MN10, the eleventh transistor MP11, and the power output transistor MP12 still maintain their current operating states; at the same time, because the output voltage Vout does not float high, the voltage value of the error amplification signal Vf maintains its current state and will not decrease temporarily;

[0167] For the dynamic adjustment module:

[0168] Because the voltage value of the error amplification signal Vf maintains its current state, the gate voltage of the seventh transistor MN7 remains unchanged, and the seventh transistor MN7 is in the conducting state, pulling down the voltage of node P0, that is, having the ability to pull down the voltage of node P0;

[0169] Because the gate of the first transistor MN1 is grounded, the first transistor MN1 is in the off state, and the second transistor MP2 mirrors the current to the eighth transistor MP8, so that a very small current passes through the eighth transistor MP8, that is, an internal bias voltage Vs is output to the gate of the eighth transistor MP8, and then the eighth transistor MP8 has a weak ability to pull up the voltage of node P0;

[0170] At this time, the pulling-down ability is greater than the pulling-up ability, so the gate voltage of the ninth transistor MN9 is low, and the ninth transistor MN9 is in the off state, that is, the ninth transistor MN9 is currently in a high-impedance state and does not draw current from the output terminal of the power output module 20, and does not pull down the output voltage Vout.

[0171] 2. At room temperature, if the output voltage Vout increases due to a decrease in the external load, through the voltage division of the first resistor R1 and the second resistor R2, the feedback voltage Vb corresponding to the output voltage Vout increases accordingly, causing the voltage value of the error amplification signal Vf output by the error amplifier 10a to decrease;

[0172] At this time, for the power output module:

[0173] Because the voltage value of the error amplification signal Vf decreases, the gate voltage of the tenth transistor MN10 decreases, so that no current passes through the tenth transistor MN10. The eleventh transistor MP11 and the power output transistor MP12 are mirror images of each other, and the current of the eleventh transistor MP11 can be mirrored to the power output transistor MP12, thereby changing the current output ability of the power output transistor MPg;

[0174] For the dynamic adjustment module:

[0175] Since the gate of the first transistor MN1 is grounded, the first transistor MN1 is in the off state. The second transistor MP2 mirrors the current onto the eighth transistor MP8, causing a very small current to flow through the eighth transistor MP8. That is, an internal bias voltage Vs is output to the gate of the eighth transistor MP8, which in turn gives the eighth transistor MP8 a weak ability to pull up the voltage of node P0;

[0176] As the output voltage Vout gradually increases and the voltage value of the error amplification signal Vf gradually decreases, the gate voltage of the seventh transistor MN7 gradually decreases, which in turn causes the conduction degree of the seventh transistor MN7 to gradually decrease until it is less than the conduction threshold of the seventh transistor MN7, at which point the seventh transistor MN7 turns off. Therefore, when the output voltage Vout gradually increases, the ability to pull down the voltage of node P0 gradually decreases until there is no ability to pull down the voltage of node P0;

[0177] As the ability to pull down gradually decreases, the gate voltage of the ninth transistor MN9 is gradually pulled up, enabling the ninth transistor MN9 to draw current from the output terminal of the power output module 20 to pull down the output voltage Vout; among them, the drawn current value is determined by the gate voltage of the ninth transistor MN9 (i.e., the voltage of node P0). The higher the gate voltage, the greater the drawn current, and the lower the equivalent impedance of the ninth transistor MN9. As the ninth transistor MN9 continuously draws current, the output voltage Vout reaches a stable state.

[0178] 3. When the temperature rises, if the output voltage Vout increases, through the voltage division of the first resistor R1 and the second resistor R2, the corresponding feedback voltage Vb of the output voltage Vout increases accordingly, causing the voltage value of the error amplification signal Vf output by the error amplifier to decrease;

[0179] At this time, for the power output module, the specific working process is similar to the working process at normal temperature described above. For details, please refer to the foregoing content and will not be elaborated here;

[0180] For the dynamic adjustment module:

[0181] Since the gate of the first transistor MN1 is grounded, the first transistor MN1 is in the off state. The second transistor MP2 mirrors the current onto the eighth transistor MP8, that is, an internal bias voltage Vs is output to the gate of the eighth transistor MP8; at the same time, due to the increase in temperature, the leakage current of the eighth transistor MP8 increases, which in turn increases the ability of the eighth transistor MP8 to pull up the voltage of node P0;

[0182] As the output voltage Vout gradually increases, the voltage value of the error amplification signal Vf gradually decreases, causing the gate voltage of the seventh transistor MN7 to gradually decrease. Consequently, the conduction degree of the seventh transistor MN7 gradually decreases until it drops below the conduction threshold of the seventh transistor MN7, at which point the seventh transistor MN7 turns off. Therefore, when the output voltage Vout gradually increases, the ability to pull down the voltage of node P0 gradually decreases until there is no ability to pull down the voltage of node P0.

[0183] As the ability to pull down gradually decreases and the ability to pull up increases gradually with the increase in temperature, the gate voltage of the ninth transistor MN9 is gradually pulled up, enabling the ninth transistor MN9 to draw current from the output terminal of the power output module 20 to pull down the output voltage Vout. Among them, the value of the drawn current is determined by the gate voltage of the ninth transistor MN9 (i.e., the voltage of node P0). The higher the gate voltage, the greater the drawn current, and the lower the equivalent impedance of the ninth transistor MN9. As the ninth transistor MN9 continuously draws current, the output voltage Vout reaches a stable state.

[0184] 4. When the temperature rises and the output voltage Vout does not temporarily float up, the tenth transistor MN10, the eleventh transistor MNP11, and the power output transistor MP12 still maintain their current operating states. At the same time, since the output voltage Vout does not temporarily float up, the voltage value of the error amplification signal Vf maintains its current state.

[0185] For the dynamic adjustment module:

[0186] Since the voltage value of the error amplification signal Vf maintains its current state, the gate voltage of the seventh transistor MN7 remains unchanged, and the seventh transistor MN7 is in the conducting state, pulling down the voltage of node P0, that is, having the ability to pull down the voltage of node P0.

[0187] Since the gate of the first transistor MN1 is grounded, the first transistor MN1 is in the off state, and the second transistor MP2 mirrors the current onto the eighth transistor MP8, that is, outputs the internal bias voltage Vs to the gate of the eighth transistor MP8. At the same time, due to the increase in temperature, the leakage current of the eighth transistor MP8 increases, thereby increasing the ability of the eighth transistor MP8 to pull up the voltage of node P0.

[0188] Among them, when the output voltage Vout does not increase, the ability to pull down the voltage of node P0 can remain unchanged, but as the temperature gradually increases, the ability to pull up the voltage of node P0 gradually increases.

[0189] When the temperature rises to a certain extent, it may cause the output voltage Vout to increase. At this time, under the action of the seventh transistor MN7, the ability to pull down the voltage of node P0 gradually decreases; at the same time, because the temperature has risen to a certain extent, the ability to pull up the voltage of node P0 also increases to a certain extent; finally, the gate voltage of the ninth transistor MN9 is gradually pulled up, so that the ninth transistor MN9 can draw current from the output terminal of the power output module 20 to pull down the output voltage Vout; among them, the drawn current value is determined by the gate voltage of the ninth transistor MN9 (that is, the voltage of node P0). The higher the gate voltage, the greater the drawn current, and the lower the equivalent impedance of the ninth transistor MN9. As the ninth transistor MN9 continuously draws current, the output voltage Vout reaches a stable state.

[0190] Embodiment: In combination with Figure 5 As shown, assume the function of the error amplifier is: when the output voltage increases, the voltage value of the error amplification signal decreases.

[0191] The difference between this embodiment and the previous embodiment is that:

[0192] By setting the third transistor MN3, the fourth transistor MN4, and the fifth transistor MP5, the function of the voltage mirror sub-unit 31c can be realized, mirroring the error amplification signal Vf onto the gate of the first transistor MN1, that is, outputting the mirror voltage Vx to the gate of the first transistor MN1, so that the gate of the first transistor MN1 is no longer electrically connected to the ground terminal GND, but is controlled by the error amplification signal Vf;

[0193] When the error amplification signal Vf decreases, the gate voltage of the first transistor MN1 decreases. When it decreases to the conduction threshold of the first transistor MN1, the first transistor MN1 turns off.

[0194] In this way, the pulling-up ability of the eighth transistor can be improved. When the output voltage rises, the ninth transistor can be turned on as early as possible, so as to pull down the output voltage as early as possible and improve the response speed of the dynamic adjustment module.

[0195] Based on the same inventive concept, an embodiment of the present invention provides a voltage stabilization control method. The implementation principle of this method is similar to the implementation principle of the previous voltage stabilizer. The specific implementation manner of this method can refer to the specific embodiments of the previous voltage stabilizer, and the repeated parts will not be described again.

[0196] Specifically, a voltage stabilization control method provided by an embodiment of the present invention, as Figure 7 shown, may include:

[0197] S701. The error amplification module determines an error amplification signal based on the output voltage and a preset reference voltage, and sends the error amplification signal to the power output module and the dynamic adjustment module respectively;

[0198] S702. The power output module outputs the output voltage;

[0199] S703. The dynamic adjustment module forms a dynamic pull-down impedance according to the error amplification signal and / or temperature, and performs a pull-down process on the output voltage based on the dynamic pull-down impedance.

[0200] Optionally, in an embodiment of the present invention, when the dynamic adjustment module includes a control unit and a pull-down unit, forming a dynamic pull-down impedance according to the error amplification signal and / or temperature, and performing a pull-down process on the output voltage based on the dynamic pull-down impedance specifically includes:

[0201] When it is determined according to the error amplification signal that the output voltage increases and / or the temperature increases, the control unit controls the impedance of the pull-down unit to decrease, so that the pull-down unit performs a pull-down process on the output voltage.

[0202] Optionally, in an embodiment of the present invention, when the control unit includes a driving subunit and a control subunit, controlling the impedance of the pull-down unit to decrease specifically includes:

[0203] The driving subunit transmits an internal bias voltage to the control subunit;

[0204] The control subunit controls the control voltage output to the pull-down unit according to the internal bias voltage and the error amplification signal; wherein, when it is determined according to the error amplification signal that the output voltage increases and / or the temperature increases, the control voltage is used to: control the impedance of the pull-down unit to decrease.

[0205] Optionally, in an embodiment of the present invention, transmitting the internal bias voltage to the control subunit specifically includes:

[0206] Output an internal bias voltage to the control subunit according to the ground signal provided by the ground terminal;

[0207] Optionally, in an embodiment of the present invention, when the control unit further includes a voltage mirror subunit electrically connected to the input end of the driving subunit, it further includes:

[0208] The voltage mirror subunit performs mirror processing on the error amplification signal to obtain a mirror voltage, and transmits the mirror voltage to the driving subunit;

[0209] Transmitting the internal bias voltage to the control subunit specifically includes:

[0210] Output an internal bias voltage to the control subunit according to the mirror voltage.

[0211] Optionally, in an embodiment of the present invention, when the control subunit includes a pull-up circuit and a pull-down circuit, the control voltage output to the pull-down unit is controlled according to the internal bias voltage and the error amplification signal, specifically including:

[0212] The pull-down circuit performs a pull-down process on the first control voltage output to the input terminal of the pull-down unit according to the error amplification signal;

[0213] The pull-up circuit performs a pull-up process on the second control voltage output to the input terminal of the pull-down unit according to the internal bias voltage, so that under the combined action of the pull-up circuit and the pull-down circuit, the output control voltage is controlled; wherein, the control voltage is the sum of the first control voltage and the second control voltage.

[0214] Optionally, in an embodiment of the present invention, the voltage at the input terminal of the pull-down unit is pulled down according to the error amplification signal, specifically including:

[0215] When it is determined according to the error amplification signal that the increase value of the output voltage is greater than the preset threshold, the pull-down process on the first control voltage output to the input terminal of the pull-down unit is stopped.

[0216] It should be emphasized that in an embodiment of the present invention, not only can dynamic adjustment be started based on the output voltage, but also a dynamic adjustment process can be started based on temperature, avoiding an increase in leakage current caused by a temperature increase, and further avoiding an increase in the output voltage when the load is low, so that the stability of the output voltage can be maintained from multiple perspectives;

[0217] Moreover, in an embodiment of the present invention, the error amplification signal is reused for dynamic adjustment, so that the increase in devices can be reduced. With only a small number of additional devices, the output voltage can be adjusted and the stability of the output voltage can be maintained, thereby improving the performance of the regulated power supply on the basis of saving occupied area and reducing manufacturing costs.

[0218] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention is also intended to include these changes and modifications.

Claims

1. A regulated power supply, characterized in that, it includes: an error amplification module, a power output module, and a dynamic adjustment module; the error amplification module is configured to: determine an error amplification signal according to the output voltage and a preset reference voltage; the power output module is configured to: output the output voltage; the dynamic adjustment module is electrically connected to the error amplification module and the power output module respectively, and the dynamic adjustment module is configured to: form a dynamic pull-down impedance according to the error amplification signal and / or temperature, and perform a pull-down process on the output voltage based on the dynamic pull-down impedance; wherein, the dynamic adjustment module includes a control unit and a pull-down unit; the control unit is electrically connected to the error amplification module and the pull-down unit respectively, and the pull-down unit is also electrically connected to the power output module; the control unit is configured to: when it is determined according to the error amplification signal that the output voltage rises and / or the temperature rises, control the impedance of the pull-down unit to decrease, so that the pull-down unit performs a pull-down process on the output voltage; the control unit includes: a driving sub-unit and a control sub-unit; the output end of the driving sub-unit is electrically connected to the control sub-unit, and the driving sub-unit is configured to: transmit an internal bias voltage to the control sub-unit; the control sub-unit is also electrically connected to the pull-down unit and the error amplification module respectively, and the control sub-unit is configured to: control the control voltage output to the pull-down unit according to the internal bias voltage and the error amplification signal; wherein, when it is determined according to the error amplification signal that the output voltage rises and / or the temperature rises, the control voltage is used to: control the impedance of the pull-down unit to decrease; the control sub-unit includes: a pull-up circuit and a pull-down circuit; the pull-up circuit is electrically connected to the driving sub-unit, the pull-down circuit, and the input end of the pull-down unit respectively, and the pull-down circuit is also electrically connected to the error amplification module and the input end of the pull-down unit respectively; the pull-down circuit is configured to: perform a pull-down process on a first control voltage output to the input end of the pull-down unit according to the error amplification signal; the pull-up circuit is configured to: perform a pull-up process on a second control voltage output to the input end of the pull-down unit according to the internal bias voltage, so that under the combined action of the pull-up circuit and the pull-down circuit, the output control voltage is controlled; wherein, the control voltage is: the sum of the first control voltage and the second control voltage.

2. The regulated power supply according to claim 1, characterized in that, the input end of the driving sub-unit is electrically connected to the ground terminal, and specifically configured to: output the internal bias voltage to the control sub-unit according to the ground signal provided by the ground terminal; or, the control unit further includes: a voltage mirror sub-unit electrically connected to the input end of the driving sub-unit; the voltage mirror sub-unit is configured to: perform a mirror process on the error amplification signal to obtain a mirror voltage, and transmit the mirror voltage to the driving sub-unit; The driving subunit is specifically configured to output the internal bias voltage to the control subunit according to the mirror voltage.

3. The regulated power supply according to claim 2, wherein, the driving subunit includes: a first transistor and a second transistor; the gate of the first transistor is electrically connected to the ground terminal or the voltage mirror subunit, the source is electrically connected to the ground terminal, and the drain is respectively electrically connected to the gate and drain of the second transistor and the control subunit; the source of the second transistor is electrically connected to the power signal terminal.

4. The regulated power supply according to claim 2, wherein, the voltage mirror subunit includes: a third transistor, a fourth transistor, and a fifth transistor; the gate of the third transistor is electrically connected to the first bias voltage signal terminal, the source is electrically connected to the ground terminal, and the drain is electrically connected to the source of the fourth transistor; the gate of the fourth transistor is electrically connected to the second bias voltage signal terminal, and the drain is respectively electrically connected to the driving subunit and the drain of the fifth transistor; the gate of the fifth transistor is electrically connected to the third bias signal terminal, and the source is electrically connected to the power signal terminal.

5. The regulated power supply according to claim 1, wherein, the pull-down circuit is specifically configured to: when it is determined according to the error amplification signal that the increase value of the output voltage is greater than a preset threshold, stop pulling down the first control voltage output to the input end of the pull-down unit.

6. The regulated power supply according to claim 5, wherein, the pull-down circuit includes: a sixth transistor and a seventh transistor, and the pull-up circuit includes an eighth transistor; the gate of the sixth transistor is electrically connected to the first bias voltage signal terminal, the source is electrically connected to the ground terminal, and the drain is electrically connected to the source of the seventh transistor; the gate of the seventh transistor is electrically connected to the error amplification module, and the drain is respectively electrically connected to the input end of the pull-down unit and the drain of the eighth transistor; the gate of the eighth transistor is electrically connected to the driving subunit, and the source is electrically connected to the power signal terminal; wherein, the conduction threshold of the seventh transistor is determined according to the preset threshold.

7. The regulated power supply according to claim 6, wherein, the power output module includes a power output transistor; the ratio of the area of the channel layer of the power output transistor to that of the eighth transistor is k; wherein, k is determined according to the ratio of the current passing through the sixth transistor to the drain current of the power output transistor.

8. The regulated power supply according to claim 1, wherein, the pull-down unit includes: a ninth transistor; the gate of the ninth transistor is electrically connected to the control unit, the source is electrically connected to the ground terminal, and the drain is electrically connected to the output end of the power output module.

9. The regulated power supply according to any one of claims 1-8, wherein, the power output module includes: a tenth transistor, an eleventh transistor, and a power output transistor; The gate of the tenth transistor is electrically connected to the error amplification module, the source is electrically connected to the ground terminal, and the drain is electrically connected to the gate and source of the eleventh transistor and the gate of the power output transistor respectively; The drain of the eleventh transistor is electrically connected to the power supply signal terminal; The source of the power output transistor is electrically connected to the power supply signal terminal, and the drain is electrically connected to the dynamic adjustment module; The error amplification module includes: an error amplifier.

10. A voltage stabilization control method, characterized in that, applied to the voltage stabilizer according to any one of claims 1 to 9, the method includes: The error amplification module determines an error amplification signal according to the output voltage and a preset reference voltage, and sends the error amplification signal to the power output module and the dynamic adjustment module respectively; The power output module outputs the output voltage; The dynamic adjustment module forms a dynamic pull-down impedance according to the error amplification signal and / or temperature, and based on the dynamic pull-down impedance, performs a pull-down process on the output voltage.

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