A method for manufacturing ABF film high-density substrate wiring

Abstract

The present invention discloses a method for manufacturing high-density substrate wiring using an ABF film, comprising the following steps: forming laser through-hole positioning marks and wiring photolithography positioning marks on both sides of the edge of a substrate; preparing a first thin-film wiring layer on the substrate using the wiring photolithography positioning marks; vacuum laminating the cut ABF film onto the first thin-film wiring layer and curing it; photoetching a through-hole mask on the surface of the ABF film using the wiring photolithography positioning marks; performing dual precision positioning using the laser through-hole positioning marks and the through-hole mask, laser drilling to form wiring through-holes; and preparing a second thin-film wiring layer on the ABF film using the wiring photolithography positioning marks. This manufacturing method utilizes a vacuum lamination process to overcome the complex process and limited size structure issues of the original PCB board laminate-level process; simultaneously, utilizing dual precision positioning using laser markings and through-hole masks, reliable interconnection between layers can be achieved, thereby meeting the high-density thin-film wiring interconnection requirements of the ABF film.

Description

Technical Field

[0001] The invention belongs to the field of electronic packaging, and in particular relates to a method for manufacturing ABF film high-density substrate wiring. Background Art

[0002] With the rapid development of integrated circuit technology, high-performance computing chips such as CPUs, GPUs, FPGAs, and ASICs are becoming increasingly powerful, complex, and extremely miniaturized. Advanced packaging technology is needed to help integrate chips while maintaining the same area, thereby promoting more efficient heterogeneous packaging integration. ABF film substrates can provide finer line width wiring for high-performance computing chips, meeting high-density wiring requirements.

[0003] ABF film (Ajinomoto Build-up Film) is an insulating material produced by Ajinomoto Co., Ltd. of Japan for use as an interlayer insulation material for high-density packaging substrate circuits. ABF film is a highly durable and rigid film that resists expansion and contraction during temperature changes, making it a suitable substrate for use between nano- and millimeter-scale components of processors or ICs. Its common method is to use direct surface laser drilling and chemical copper plating. For example, in the method for manufacturing a low-warpage, high-density packaging substrate with invention patent application number CN202110469453.9 published by the State Intellectual Property Office, the inner layer circuit of the packaging substrate is laminated with the ABF film layer. Surface roughening is required before lamination, and laser drilling and chemical copper deposition are performed after lamination to form a multi-layer packaging substrate. The above-mentioned patent uses traditional PCB board manufacturing processes for ABF film lamination and laser drilling. The process is complex and the dimensional structure is greatly affected by the PCB board level. In addition, the chemical copper plating has poor adhesion and low reliability, making it difficult to achieve high-precision interconnection between layers by laser positioning alone. Summary of the Invention

[0004] In response to the above technical problems, the present invention provides an ABF film high-density substrate wiring manufacturing method. This manufacturing method utilizes a vacuum lamination process to change the problems of complex process and limited size structure in the original PCB board laminate-level process; utilizes a thin film wiring process to overcome the problems of complex chemical copper plating process, poor adhesion, and low reliability; and simultaneously utilizes laser marking and through-hole mask dual precise positioning to achieve reliable interconnection between layers.

[0005] To achieve the above object, the technical solution of the present invention is:

[0006] A method for manufacturing ABF film high-density substrate wiring, comprising the following steps:

[0007] S1: Laser marking is performed on both sides of the edge of a clean substrate to form laser through-hole positioning marks and wiring lithography positioning marks respectively;

[0008] S2: using the wiring photolithography positioning mark, a first thin film wiring layer is prepared on the substrate of step S1 by using a thin film process;

[0009] S3: cutting the ABF film, vacuum laminating the cut ABF film onto the first thin film wiring layer, and curing it;

[0010] S4: using the wiring photolithography positioning mark, photolithography a through-hole mask on the surface of the ABF film in step S3;

[0011] S5: using the laser through-hole positioning mark and the through-hole mask to perform double precise positioning, and performing laser drilling to form a wiring through-hole;

[0012] S6: using the wiring photolithography positioning mark, a second thin film wiring layer is prepared on the ABF film of step S5 by using a thin film process;

[0013] S7: Repeat steps S3-S6 to prepare the third and subsequent thin film wiring layers to obtain the ABF film high-density substrate wiring.

[0014] Furthermore, the laser through-hole positioning mark in step S1 is a circular hole mark punched by laser, and the wiring photolithography positioning mark is a cross mark punched by laser.

[0015] Furthermore, the thin film process in step S2 specifically includes:

[0016] S201: sputtering a first composite thin film adhesion layer on the substrate of step S1;

[0017] S202: performing photolithography on the first composite thin film adhesion layer using the wiring photolithography positioning mark to form a first composite thin film photolithography mask;

[0018] S203: Graphically electroplating the first metal conductive layer;

[0019] S204: Debonding and wet etching are performed to remove the first composite thin film adhesion layer on the exposed surface to form a first thin film wiring layer.

[0020] Furthermore, the thin film process in step S6 specifically includes:

[0021] S601: sputtering a second composite thin film adhesion layer on the ABF film of step S5;

[0022] S602: performing photolithography on the second composite thin film adhesion layer using the wiring photolithography positioning mark to form a second composite thin film photolithography mask;

[0023] S603: Graphic electroplating of the second metal conductive layer;

[0024] S604: Debonding and wet etching are performed to remove the second composite film adhesion layer on the exposed surface to form a first thin film wiring layer.

[0025] Furthermore, the first composite film adhesion layer and the second composite film adhesion layer are both TiW / Cu film layers, Ti / Cu film layers or Cr / Cu film layers, wherein the thickness of the Cu layer is

[0026] Furthermore, the first metal conductive layer and the second metal conductive layer are both Cu / Au film layers, Cu / Ni / Au film layers or Cu / Pt / Au film layers, wherein the thickness of the Cu layer is 3 μm to 5 μm.

[0027] Furthermore, in step S601, the surface of the ABF film is first pretreated, and then a second composite thin film adhesion layer is sputtered on the pretreated ABF film;

[0028] The ABF film surface pretreatment is to place the substrate with the ABF film in acetone, alcohol, and deionized water in sequence for cleaning, and then perform Ar plasma cleaning on the ABF film surface, with the plasma cleaning power being 200W to 300W.

[0029] Furthermore, the step S3 specifically includes:

[0030] S301: Cut the ABF film according to the substrate size, place it on the film laminating machine, and laminate the ABF film and the base substrate with the first thin film wiring layer face down on the blue film in sequence. The laminating temperature is 100°C to 120°C.

[0031] S302: The substrate with the ABF film is laminated with a high-temperature film and a flat molybdenum plate in sequence, and placed in a vacuum lamination system;

[0032] S303: Vacuum heating and pressurization, and curing are performed in three stages.

[0033] Furthermore, the three-stage vacuum heating and pressurization is as follows: the first stage is vacuum heating and pressurization, with a vacuum degree of 5×10 -2 torr, the pressurizing temperature is 100℃~120℃, and the pressure is not less than 7Kg; the second stage is heating and pressurizing, the pressurizing temperature is 120℃~150℃, and the pressure is not less than 5Kg; the third stage is curing, the curing temperature is 180℃~200℃, and the curing time is 30min.

[0034] Furthermore, the substrate is a SiC, Al2O3 ceramic, AlN ceramic, sapphire, LTCC or HTCC substrate.

[0035] Due to the adoption of the above technical solution, the present invention has the following advantages and positive effects compared with the prior art:

[0036] The ABF film high-density thin-film wiring substrate is manufactured by thin-film technology, and dual precise positioning by laser marking and through-hole mask can be used to achieve reliable interconnection between layers. At the same time, the manufacturing method can utilize vacuum lamination technology, and the ABF film can be arbitrarily cut without size restrictions, thus changing the problems of complex process and limited size structure in the laminate-level process of the original PCB board. In addition, the thin-film sputtering process is preferably used to overcome the problems of complex original chemical copper plating process, poor adhesion, low reliability, etc., and can be applied to the production of high-density thin-film wiring of ABF film on various substrates. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 A schematic flow chart of a method for manufacturing thin-film wiring of an ABF film high-density substrate according to an embodiment of the present invention;

[0038] Figures 2a to 2n for Figure 1 Schematic diagram of the structure of the ABF film high-density substrate thin film wiring formed corresponding to each step of the method;

[0039] Figure 3 This is a schematic diagram of the top view of the substrate after laser marking. DETAILED DESCRIPTION

[0040] The following is a further detailed description of the ABF film high-density substrate wiring manufacturing method proposed by the present invention in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description.

[0041] The following description sets forth numerous specific details to facilitate a thorough understanding of the present invention. However, the present invention can be implemented in many other ways than those described herein, and those skilled in the art can make similar generalizations without departing from the scope of the present invention. Therefore, the present invention is not limited to the specific implementations disclosed below.

[0042] The method for manufacturing ABF film high-density substrate wiring of this embodiment includes the following steps:

[0043] S1: Laser marking is performed on both sides of the edge of a clean substrate to form a laser through-hole positioning mark and a wiring lithography positioning mark respectively; the substrate is SiC, Al2O3 ceramic, AlN ceramic, sapphire, LTCC or HTCC substrate;

[0044] S2: using the wiring photolithography positioning mark, a first thin film wiring layer is prepared on the substrate of step S1 by using a thin film process;

[0045] Specifically, the thin film process in step S2 includes:

[0046] S201: sputtering a first composite thin film adhesion layer on the substrate in step S1, wherein the first composite thin film adhesion layer is a TiW / Cu film layer, a Ti / Cu film layer or a Cr / Cu film layer, wherein the Cu layer has a thickness of

[0047] S202: performing photolithography on the first composite thin film adhesion layer using the wiring photolithography positioning mark to form a first composite thin film photolithography mask;

[0048] S203: Pattern electroplating a first metal conductive layer, the first metal conductive layer being a Cu / Au film layer, a Cu / Ni / Au film layer, or a Cu / Pt / Au film layer, wherein the Cu layer has a thickness of 3 μm to 5 μm;

[0049] S204: removing the first composite film adhesion layer from the exposed surface by degumming and wet etching to form a first thin film wiring layer;

[0050] S3: cutting the ABF film, vacuum laminating the cut ABF film onto the first thin film wiring layer, and curing it;

[0051] Specifically, the step S3 includes:

[0052] S301: Cut the ABF film according to the substrate size, place it on the film laminating machine, and laminate the ABF film and the base substrate with the first thin film wiring layer face down on the blue film in sequence. The laminating temperature is 100°C to 120°C.

[0053] S302: The substrate with the ABF film is laminated with a high-temperature film and a flat molybdenum plate in sequence, and placed in a vacuum lamination system;

[0054] S303: Vacuum heating, pressurization and curing are carried out in three stages: in the first stage, vacuum heating and pressurization are carried out with a vacuum degree of 5×10 -2 torr, the pressurizing temperature is 100℃~120℃, and the pressure is not less than 7Kg; the second stage is heating and pressurizing, the pressurizing temperature is 120℃~150℃, and the pressure is not less than 5Kg; the third stage is curing, the curing temperature is 180℃~200℃, and the curing time is 30min;

[0055] S4: using the wiring photolithography positioning mark, photolithography a through-hole mask on the surface of the ABF film in step S3;

[0056] S5: using the laser through-hole positioning mark and the through-hole mask to perform double precise positioning, and performing laser drilling to form a wiring through-hole;

[0057] S6: using the wiring photolithography positioning mark, a second thin film wiring layer is prepared on the ABF film of step S5 by using a thin film process;

[0058] Specifically, the thin film process in step S6 includes:

[0059] S601: sputtering a second composite thin film adhesion layer on the ABF film of step S5; the second composite thin film adhesion layer is a TiW / Cu film layer, a Ti / Cu film layer or a Cr / Cu film layer, wherein the thickness of the Cu layer is

[0060] S602: performing photolithography on the second composite thin film adhesion layer using the wiring photolithography positioning mark to form a second composite thin film photolithography mask;

[0061] S603: Pattern electroplating a second metal conductive layer, the second metal conductive layer is a Cu / Au film layer, a Cu / Ni / Au film layer, or a Cu / Pt / Au film layer, wherein the Cu layer has a thickness of 3 μm to 5 μm;

[0062] S604: Degumming and wet etching to remove the second layer of composite film adhesion layer on the exposed surface to form the first layer of thin film wiring layer

[0063] S7: Repeat steps S3-S6 to prepare the third and subsequent thin film wiring layers to obtain the ABF film high-density substrate wiring.

[0064] Furthermore, the laser through-hole positioning mark in step S1 is a circular hole mark punched by laser, and the wiring photolithography positioning mark is a cross mark punched by laser.

[0065] Furthermore, in step S601, the surface of the ABF film is first pretreated, and then a second composite thin film adhesion layer is sputtered on the pretreated ABF film;

[0066] The ABF film surface pretreatment is to place the substrate with the ABF film in acetone, alcohol, and deionized water in sequence for cleaning, and then perform Ar plasma cleaning on the ABF film surface, with the plasma cleaning power being 200W to 300W.

[0067] Specific reference Figure 1 The ABF film high-density wiring substrate manufacturing method shown includes the following steps:

[0068] (a1) Laser marking is performed on both sides of the edge of a clean substrate to form laser through-hole positioning marks and wiring lithography positioning marks respectively;

[0069] (a2) sputtering a first composite thin film adhesion layer on the substrate surface;

[0070] (a3) performing photolithography on the first composite thin film adhesion layer using the wiring photolithography positioning mark to form a first composite thin film photolithography mask;

[0071] (a4) pattern electroplating the first metal conductive layer;

[0072] (a5) removing the adhesive layer of the first composite thin film from the exposed surface by degumming and wet etching to form a first thin film wiring layer;

[0073] (a6) cutting the ABF film, vacuum laminating the ABF film onto the first thin film wiring layer, and curing the film;

[0074] (a7) using the wiring photolithography positioning mark, photolithography a through-hole mask on the surface of the ABF film;

[0075] (a8) Using laser through-hole positioning marks and through-hole masks for double precision positioning, laser drilling is performed according to the drawing requirements to form wiring through-holes;

[0076] (a9) completing the surface treatment of the ABF film and sputtering a second composite film adhesion layer on the surface of the ABF film;

[0077] (a10) performing photolithography on the second composite thin film adhesion layer using the wiring photolithography positioning mark to form a second composite thin film photolithography mask;

[0078] (a11) pattern electroplating a second metal conductive layer;

[0079] (a12) removing the adhesive layer of the second composite thin film from the exposed surface by degumming and wet etching to form a second thin film wiring layer;

[0080] (a13) Repeat steps (a6) to (a12) to prepare the third and above thin film wiring layers to obtain the required ABF film high-density substrate wiring.

[0081] Specifically, the following Figure 1 and Figures 2a to 2n Each step is described in detail.

[0082] See Figure 1 、 2a and 2b, in step (a1), laser marking is performed on both sides of the edge of a clean base substrate 100 to form a laser through-hole positioning mark 101 and a wiring lithography positioning mark 102, respectively;

[0083] See Figure 1 and 2c In step (a2), a first composite thin film adhesion layer 103 is sputtered on the surface of the substrate;.

[0084] See Figure 1 and2d In step (a3), photolithography is performed on the first composite thin film adhesion layer 103 using the wiring photolithography positioning mark 102 to form a first composite thin film photolithography mask 104;

[0085] See Figure 1 and Figure 2e , in step (a4), pattern electroplating a first metal conductive layer 105;

[0086] See Figure 1 and 2f In step (a5), the photoresist is removed and wet etching is performed to remove the first composite thin film adhesion layer 103 on the exposed surface to form a first thin film wiring layer 106;

[0087] See Figure 1 and 2g In step (a6), the ABF film 107 is cut to a size smaller than the base substrate 100, preferably to expose the laser through-hole positioning mark 101 and the wiring photolithography positioning mark 102; the ABF film 107 is vacuum laminated onto the first thin film wiring layer 106 and pre-cured;

[0088] See Figure 1 and 2h In step (a7), a through-hole mask 108 is photoetched on the surface of the ABF film using the wiring photolithography positioning mark 102;

[0089] See Figure 1 and 2i In step (a8), laser through-hole positioning mark 101 and through-hole mask 108 are used for double precise positioning, and laser drilling is performed according to the drawing requirements to form wiring through-hole 109;

[0090] See Figure 1 and 2j In step (a9), the surface treatment of the ABF film 107 is completed, and a second composite thin film adhesion layer 110 is sputtered on the surface of the ABF film 107;

[0091] See Figure 1 and 2k In step (a10), photolithography is performed on the second composite thin film adhesion layer 110 using the wiring photolithography positioning mark 102 to form a second composite thin film photolithography mask 111;

[0092] See Figure 1 and 2l , in step (a11), pattern-plating a second metal conductive layer 112;

[0093] See Figure 1 and 2mIn step (a12), the second composite thin film adhesion layer 110 on the exposed surface is removed by desizing and wet etching to form a second thin film wiring layer 113;

[0094] See Figure 1 and 2n In step (a13), repeat steps (a6) to (a12) to prepare a third layer and above of ABF film high-density substrate wiring.

[0095] See Figure 3 and 2b The laser through-hole positioning mark 101 in step (a1) is a circular hole mark punched by laser, and the wiring photolithography positioning mark 102 is a cross mark punched by laser.

[0096] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited to the above embodiments. Even if various changes are made to the present invention, if these changes fall within the scope of the claims of the present invention and their equivalents, they still fall within the scope of protection of the present invention.

Claims

1. A method for manufacturing ABF film high-density substrate wiring, characterized in that: The following steps are involved: S1: Laser marking is performed on both sides of the edge of the substrate to form laser through-hole positioning marks and wiring lithography positioning marks respectively; S2: using the wiring photolithography positioning mark, a first thin film wiring layer is prepared on the substrate of step S1 by using a thin film process; S3: cutting the ABF film, vacuum laminating the cut ABF film onto the first thin film wiring layer, and curing it; S4: using the wiring photolithography positioning mark, photolithography a through-hole mask on the surface of the ABF film in step S3; S5: using the laser through-hole positioning mark and the through-hole mask to perform double precise positioning, and performing laser drilling to form a wiring through-hole; S6: using the wiring photolithography positioning mark, a second thin film wiring layer is prepared on the ABF film of step S5 by using a thin film process; S7: Repeat steps S3-S6 to prepare the third and subsequent thin film wiring layers to obtain the ABF film high-density substrate wiring; The thin film process in step S2 specifically includes: S201: sputtering a first composite thin film adhesion layer on the substrate of step S1; S202: performing photolithography on the first composite thin film adhesion layer using the wiring photolithography positioning mark to form a first composite thin film photolithography mask; S203: Graphic electroplating of the first metal conductive layer; S204: Debonding and wet etching are performed to remove the first composite thin film adhesion layer on the exposed surface to form a first thin film wiring layer.

2. The ABF film high-density substrate wiring manufacturing method according to claim 1, characterized in that: The laser through-hole positioning mark in step S1 is a circular hole mark punched by laser, and the wiring photolithography positioning mark is a cross mark punched by laser.

3. The ABF film high-density substrate wiring manufacturing method according to claim 1, characterized in that: The thin film process in step S6 specifically includes: S601: sputtering a second composite thin film adhesion layer on the ABF film of step S5; S602: performing photolithography on the second composite thin film adhesion layer using the wiring photolithography positioning mark to form a second composite thin film photolithography mask; S603: Graphic electroplating of the second metal conductive layer; S604: Debonding and wet etching are performed to remove the second composite film adhesion layer on the exposed surface to form a first thin film wiring layer.

4. The method for manufacturing ABF film high-density substrate wiring according to claim 3, characterized in that: The first composite film adhesion layer and the second composite film adhesion layer are both TiW / Cu film layers, Ti / Cu film layers or Cr / Cu film layers, wherein the thickness of the Cu layer is 2000Å to 5000Å.

5. The method for manufacturing ABF film high-density substrate wiring according to claim 3, characterized in that: The first metal conductive layer and the second metal conductive layer are both Cu / Au film layers, Cu / Ni / Au film layers or Cu / Pt / Au film layers, wherein the thickness of the Cu layer is 3 μm to 5 μm.

6. The method for manufacturing ABF film high-density substrate wiring according to claim 3, characterized in that: In step S601, the surface of the ABF film is first pretreated, and then a second composite thin film adhesion layer is sputtered on the pretreated ABF film; The ABF film surface pretreatment is to place the substrate with the ABF film in acetone, alcohol, and deionized water in sequence for cleaning, and then perform Ar plasma cleaning on the ABF film surface, with the plasma cleaning power being 200W to 300W.

7. The method for manufacturing ABF film high-density substrate wiring according to claim 1, characterized in that: The step S3 specifically includes: S301: Cut the ABF film according to the substrate size, place it on the film laminating machine, and laminate the ABF film and the base substrate with the first thin film wiring layer face down on the blue film in sequence. The laminating temperature is 100°C to 120°C. S302: The substrate with the ABF film is laminated with a high-temperature film and a flat molybdenum plate in sequence, and placed in a vacuum lamination system; S303: Vacuum heating and pressurization, and curing are performed in three stages.

8. The method for manufacturing ABF film high-density substrate wiring according to claim 7, characterized in that: The three-stage vacuum heating and pressurization is as follows: the first stage is vacuum heating and pressurization, with a vacuum degree of 5×10 -2 torr, the pressurizing temperature is 100℃~120℃, and the pressure is not less than 7Kg; the second stage is heating and pressurizing, the pressurizing temperature is 120℃~150℃, and the pressure is not less than 5Kg; the third stage is curing, the curing temperature is 180℃~200℃, and the curing time is 30min.

9. The method for manufacturing ABF film high-density substrate wiring according to claim 1, characterized in that: The substrate is SiC, Al2O3 ceramic, AlN ceramic, sapphire, LTCC or HTCC substrate.

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