A semiconductor laser element having a strain-induced exciton response layer

Abstract

The application belongs to the technical field of semiconductor photoelectric devices, and particularly relates to a semiconductor laser element with a strain-induced exciton response layer, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer, wherein the upper waveguide layer and the electron blocking layer are provided with the strain-induced exciton response layer; the strain-induced exciton response layer is one of KV3Sb5, WSe2, ReO3, RbV3Sb5, CsV3Sb5 and KSbO3 or a combination of two or more thereof; the strain-induced exciton response layer is created by applying a local strain to the interface between the active layer and the upper waveguide layer and / or the lower waveguide layer, creating a strain field, changing the electron anisotropy, eliminating the sub-bandgap emission state of the spectrum overlap of the strain-induced exciton response layer, inhibiting the mode jump in the vertical direction, generating a single-mode laser, obtaining a good FFP far-field pattern, enhancing the exciton response of the active layer, reducing the driving voltage and excitation threshold of the laser element, enhancing the confinement factor, and improving the optical power and slope efficiency of the laser element.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element with a strain-induced exciton response layer. BACKGROUND

[0002] Lasers are widely used in laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are various. The main types of lasers include solid-state, gas, liquid, semiconductor and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long service life, simple and compact structure, and small size.

[0003] There are great differences between lasers and nitride semiconductor light-emitting diodes. 1) Laser is generated by stimulated radiation of carriers, with small spectral half-width and high brightness. The output power of a single laser can reach W level, while the output power of a single nitride semiconductor light-emitting diode is in mW level. 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency droop effect. 3) Light-emitting diode is spontaneously transitioned and radiated, and the non-coherent light is transitioned from high energy level to low energy level without external action. Laser is stimulated transition radiation, and the energy of the induced photon should be equal to the energy level difference of the electron transition. The coherent light is generated by the same photons. 4) Different principles: light-emitting diode is under the action of external voltage, and electron-hole transition occurs in quantum well or p-n junction to produce radiation recombination. Laser needs to meet the lasing conditions, and the carrier inversion distribution in the active region must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. When the threshold condition is met, the gain is greater than the loss, and finally the laser is output.

[0004] The nitride semiconductor laser has the following problems: 1) strong polarization effect caused by large internal lattice mismatch and strain, strong QCSE quantum confinement Stark effect, and limited improvement of the electrical lasing gain of the laser; 2) problems such as hole injection barrier caused by quantum well polarization electric field, hole overflow in the active layer, uneven hole injection, and low efficiency, resulting in serious asymmetry and mismatch of electron-hole in the quantum well, electron leakage and carrier delocalization, more difficult hole transport in the quantum well, uneven carrier injection, and uneven gain; 3) the standing wave formed by the leakage of the optical field mode to the substrate will result in low substrate mode suppression efficiency, and poor far-field pattern FFP. SUMMARY

[0005] The application aims to provide a semiconductor laser element with a strain-induced exciton response layer, the strain-induced exciton response layer of the semiconductor laser element being one or more than two combinations of KV3Sb5, WSe2, ReO3, RbV3Sb5, CsV3Sb5, KSbO3; the strain-induced exciton response layer creates a strain field by applying a local strain at the interface between an electron blocking layer and an upper waveguide layer, reduces a quantum well polarization electric field and a quantum confinement stark effect, reduces a hole injection barrier, improves the overlap ratio of active layer electron and hole wave functions, and improves the electric excitation gain; meanwhile, the strain-induced exciton response layer can change the electron nematicity, so that the strain-induced exciton response layer eliminates the sub-bandgap emission state of spectral overlap, suppresses the mode jump in the vertical direction, produces a single-mode laser, obtains a good FFP far-field pattern, and enhances the exciton response of the active layer, reduces the driving voltage and excitation threshold of the laser element, enhances the confinement factor, and improves the optical power and slope efficiency of the laser element.

[0006] To achieve the above-mentioned purpose, the application adopts the following technical scheme: a semiconductor laser element with a strain-induced exciton response layer, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer; a strain-induced exciton response layer is arranged between the upper waveguide layer and the electron blocking layer; the strain-induced exciton response layer is a specific structure formed by more than two combinations of KV3Sb5, WSe2, ReO3, RbV3Sb5, CsV3Sb5, and KSbO3; the specific structure is any one or more than two combinations of a heterojunction structure, a superlattice structure, a quantum well structure, a core-shell structure, and a quantum dot structure.

[0007] Further improvement of the semiconductor laser element with the strain-induced exciton response layer:

[0008] Preferably, the thickness of the strain-induced exciton response layer is 5-500 nm.

[0009] Preferably, the lower confinement layer and the upper confinement layer are one or more than two combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, the thickness is 50-5000 nm, and the Si doping concentration is 1E18-1E20 cm -3 .

[0010] Preferably, the lower waveguide layer and the upper waveguide layer are one or more than two combinations of GaN, InGaN, and AlInGaN, and the thickness is 50-1000 nm.

[0011] Preferably, the active layer is a periodic structure composed of well layers and barrier layers, the well layer is an InGaN well layer, the barrier layer is one or more than two combinations of GaN, AlInGaN, AlGaN, AlInN, and the period number m satisfies 4≥m≥1.

[0012] Preferably, the electron blocking layer is one or more than two combinations of GaN, AlGaN, AlInGaN, AlN, and AlInN, and the thickness is 20-1000nm.

[0013] Preferably, the substrate is any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire-SiO2 composite substrate, sapphire-AlN composite substrate, sapphire-SiNx, sapphire-SiO2-SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0014] Preferably, the lower confinement layer is an AlGaN layer, the thickness is 50-5000nm, the Si doping concentration is 1E18-1E20cm -3 ; the upper confinement layer is an AlInGaN layer, the thickness is 50-5000nm, the Si doping concentration is 1E18-1E20cm -3 ; the lower waveguide layer is a GaN layer, the thickness is 50-1000nm; the upper waveguide layer is an InGaN layer, the thickness is 50-1000nm; the active layer is a periodic structure composed of well layers and barrier layers, the well layer is an InGaN well layer, and the period number m satisfies 4≥m≥1.

[0015] Preferably, the strain-induced exciton response layer is a specific structure formed by the following binary combinations: KV3Sb5 / WSe2, KV3Sb5 / ReO3, KV3Sb5 / RbV3Sb5, KV3Sb5 / CsV3Sb5, KV3Sb5 / KSbO3, WSe2 / ReO3, WSe2 / RbV3Sb5, WSe2 / CsV3Sb5, WSe2 / KSbO3, ReO3 / RbV3Sb5, ReO3 / CsV3Sb5, ReO3 / KSbO3, RbV3Sb5 / CsV3Sb5, RbV3Sb5 / KSbO3, CsV3Sb5 / KSbO3.

[0016] Preferably, the strain-induced excitonic response layer is a specific structure formed by the following ternary combinations: KV3Sb5 / WSe2 / ReO3, KV3Sb5 / WSe2 / RbV3Sb5, KV3Sb5 / WSe2 / CsV3Sb5, KV3Sb5 / WSe2 / KSbO3, KV3Sb5 / ReO3 / RbV3Sb5, KV3Sb5 / ReO3 / CsV3Sb5, KV3Sb5 / ReO3 / KSbO3, KV3Sb5 / RbV3Sb5 / CsV3Sb5, KV3Sb5 / RbV3Sb5 / KSbO3, KV3Sb5 / CsV3Sb5 / KSbO3, WSe2 / ReO3 / RbV3Sb5, WSe2 / ReO3 / CsV3Sb5, WSe2 / ReO3 / KSbO3, WSe2 / RbV3Sb5 / CsV3Sb5, WSe2 / RbV3Sb5 / KSbO3, WSe2 / CsV3Sb5 / KSbO3, ReO3 / RbV3Sb5 / CsV3Sb5, ReO3 / RbV3Sb5 / KSbO3, ReO3 / CsV3Sb5 / KSbO3, RbV3Sb5 / CsV3Sb5 / KSbO3.

[0017] Preferably, the strain-induced excitonic response layer is a specific structure formed by the following ternary combinations: KV3Sb5 / WSe2 / ReO3, KV3Sb5 / WSe2 / RbV3Sb5, KV3Sb5 / WSe2 / CsV3Sb5, KV3Sb5 / WSe2 / KSbO3, KV3Sb5 / ReO3 / RbV3Sb5, KV3Sb5 / ReO3 / CsV3Sb5, KV3Sb5 / ReO3 / KSbO3, KV3Sb5 / RbV3Sb5 / CsV3Sb5, KV3Sb5 / RbV3Sb5 / KSbO3, KV3Sb5 / CsV3Sb5 / KSbO3, WSe2 / ReO3 / RbV3Sb5, WSe2 / ReO3 / CsV3Sb5, WSe2 / ReO3 / KSbO3, WSe2 / RbV3Sb5 / CsV3Sb5, WSe2 / RbV3Sb5 / KSbO3, WSe2 / CsV3Sb5 / KSbO3, ReO3 / RbV3Sb5 / CsV3Sb5, ReO3 / RbV3Sb5 / KSbO3, ReO3 / CsV3Sb5 / KSbO3, RbV3Sb5 / CsV3Sb5 / KSbO3.

[0018] Preferably, the strain-induced excitonic response layer is a specific structure formed by the following ternary combinations: KV3Sb5 / WSe2 / ReO3, KV3Sb5 / WSe2 / RbV3Sb5, KV3Sb5 / WSe2 / CsV3Sb5, KV3Sb5 / WSe2 / KSbO3, KV3Sb5 / ReO3 / RbV3Sb5, KV3Sb5 / ReO3 / CsV3Sb5, KV3Sb5 / ReO3 / KSbO3, KV3Sb5 / RbV3Sb5 / CsV3Sb5, KV3Sb5 / RbV3Sb5 / KSbO3, KV3Sb5 / CsV3Sb5 / KSbO3, WSe2 / ReO3 / RbV3Sb5, WSe2 / ReO3 / CsV3Sb5, WSe2 / ReO3 / KSbO3, WSe2 / RbV3Sb5 / CsV3Sb5, WSe2 / RbV3Sb5 / KSbO3, WSe2 / CsV3Sb5 / KSbO3, ReO3 / RbV3Sb5 / CsV3Sb5, ReO3 / RbV3Sb5 / KSbO3, ReO3 / CsV3Sb5 / KSbO3, RbV3Sb5 / CsV3Sb5 / KSbO3.

[0019] KV3Sb5 / WSe2 / ReO3 / RbV3Sb5 / KSbO3, KV3Sb5 / WSe2 / ReO3 / CsV3Sb5 / KSbO3, KV3Sb5 / ReO3 / RbV3Sb5 / CsV3Sb5 / KSbO3, WSe2 / ReO3 / RbV3Sb5 / CsV3Sb5 / KSbO3, KV3Sb5 / WSe2 / ReO3 / RbV3Sb5 / CsV3Sb5 / KSbO3.

[0020] The present application has the beneficial effects compared with the prior art in that:

[0021] 1) The present application provides a semiconductor laser element with a strain-induced exciton response layer, which is structurally sequentially composed of a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer from bottom to top, wherein a strain-induced exciton response layer is arranged between the lower confinement layer and the lower waveguide layer, and the strain-induced exciton response layer of the semiconductor laser element is one of KV3Sb5, WSe2, ReO3, RbV3Sb5, CsV3Sb5, and KSbO3 or a combination of two or more thereof; the strain-induced exciton response layer creates a strain field by applying a local strain at the interface between the electron blocking layer and the upper waveguide layer, reduces the quantum well polarization electric field and the quantum confinement stark effect, reduces the hole injection barrier, improves the overlap ratio of the active layer electron and hole wave functions, and improves the electrical excitation gain; at the same time, the strain-induced exciton response layer can change the electron nematicity, so that the strain-induced exciton response layer eliminates the sub-bandgap emission state of spectral overlap, suppresses the mode jump in the vertical direction, produces single-mode laser, obtains a good FFP far-field pattern, and enhances the exciton response of the active layer, reduces the driving voltage and excitation threshold of the laser element, enhances the confinement factor, and improves the optical power and slope efficiency of the laser element.

[0022] 2) The semiconductor laser element with a strain-induced exciton response layer of the present application has a slope efficiency of 1.4 W / A or more, an optical power of 4.7 W, and reaches the level of commercial application in the application of blue laser. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 is a structural schematic diagram of a semiconductor laser element with a strain-induced exciton response layer according to an embodiment of the present application;

[0024] The figure marks: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer; 105: electron blocking layer; 106: upper confinement layer; 107: strain-induced exciton response layer. DETAILED DESCRIPTION

[0025] In order to make the objects, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the embodiments. All other embodiments obtained by those skilled in the art without creative labor on the basis of the embodiments in the present application belong to the protection scope of the present application.

[0026] Comparative Example 1

[0027] The present comparative example provides a semiconductor laser element, which comprises, in order from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. Specifically:

[0028] The substrate 100 is a GaN substrate.

[0029] The lower confinement layer 101 is an AlGaN layer with a thickness of 100 nm and a Si doping concentration of 1E18 cm-3. -3

[0030] The lower waveguide layer 102 is a GaN layer with a thickness of 100 nm.

[0031] The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is GaN, and the period number m is 3.

[0032] The upper waveguide layer 104 is an InGaN layer with a thickness of 100 nm.

[0033] The electron blocking layer 105 is an AlInGaN layer with a thickness of 30 nm.

[0034] The upper confinement layer 106 is an AlGaN layer with a thickness of 100 nm and a Si doping concentration of 1E18 cm-3. -3

[0035] Embodiment 1

[0036] The present embodiment provides a semiconductor laser element 1 with a strain-induced exciton response layer, which has a structure as shown in Figure 1 The semiconductor laser element 1 comprises, in order from bottom to top, a substrate 100, a lower confinement layer 101, a strain-induced exciton response layer 107, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. Specifically:

[0037] The substrate 100 is a GaN substrate.

[0038] The lower confinement layer 101 is an AlGaN layer with a thickness of 100 nm and a Si doping concentration of 1E18 cm-3.

[0039] ​​The lower waveguide layer 102 is a GaN layer with a thickness of 100 nm;

[0040] The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is GaN, and the period number m is 3;

[0041] The upper waveguide layer 104 is an InGaN layer with a thickness of 100 nm;

[0042] The strain-induced exciton response layer 107 is a superlattice structure composed of KV3Sb5 / RbV3Sb5 binary combination with a thickness of 100 nm;

[0043] The electron blocking layer 105 is an AlInGaN layer with a thickness of 30 nm;

[0044] The upper confinement layer 106 is an AlGaN layer with a thickness of 100 nm, and the Si doping concentration is 1E18 cm -3 .

[0045] Embodiment 2

[0046] This embodiment provides a semiconductor laser element 2 with a strain-induced exciton response layer, the structure is as shown in Figure 1 The structure includes, from bottom to top, a substrate 100, a lower confinement layer 101, a strain-induced exciton response layer 107, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; Specifically:

[0047] The substrate 100 is a GaN substrate;

[0048] The lower confinement layer 101 is a GaN layer with a thickness of 50 nm, and the Si doping concentration is 1E18 cm -3 ;

[0049] The lower waveguide layer 102 is an InGaN layer with a thickness of 50 nm;

[0050] The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is an AlInGaN layer, and the period number m satisfies m is 1;

[0051] The upper waveguide layer 104 is an AlInGaN layer with a thickness of 1000 nm;

[0052] The strain-induced exciton response layer 107 is a heterojunction structure composed of KV3Sb5 / WSe2 / KSbO3 ternary combination with a thickness of 50 nm;

[0053] The electron blocking layer 105 is a combination of GaN and AlGaN with a thickness of 20 nm;

[0054] The upper confining layer 106 is a combination of AlInGaN and AlN, with a thickness of 20 nm.

[0055] Embodiment 3

[0056] This embodiment provides a semiconductor laser element 3 with a strain-induced exciton response layer, which has a structure as shown in the figure. Figure 1 The structure includes, from bottom to top, a substrate 100, a lower confining layer 101, a strain-induced exciton response layer 107, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confining layer 106. Specifically:

[0057] The substrate 100 is a GaN substrate.

[0058] The lower confining layer 101 is an InGaN layer with a thickness of 5000 nm and a Si doping concentration of 1E20 cm -3 ;

[0059] The lower waveguide layer 102 is a combination of InGaN and AlInGaN, with a thickness of 1000 nm.

[0060] The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is a combination of AlGaN and AlInN, and the period number m satisfies m = 4.

[0061] The upper waveguide layer 104 is a combination of InGaN and AlInGaN, with a thickness of 50 nm.

[0062] The strain-induced exciton response layer 107 is a quantum well structure of the quaternary combination KV3Sb5 / ReO3 / RbV3Sb5 / CsV3Sb5, with a thickness of 500 nm.

[0063] The electron blocking layer 105 is a combination of GaN, AlGaN, and AlInGaN, with a thickness of 1000 nm.

[0064] The upper confining layer 106 is a combination of AlN and AlInN, with a thickness of 1000 nm.

[0065] Embodiment 4

[0066] This embodiment provides a semiconductor laser element 4 with a strain-induced exciton response layer, which has a structure as shown in the figure. Figure 1 The structure includes, from bottom to top, a substrate 100, a lower confining layer 101, a strain-induced exciton response layer 107, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confining layer 106. Specifically:

[0067] The substrate 100 is a GaN substrate;

[0068] The lower confining layer 101 is a combination of AlInGaN, AlN, InN, with a thickness of 100 nm and a Si doping concentration of 1E19 cm -3 ;

[0069] The lower waveguide layer 102 is AlInGaN, with a thickness of 100 nm;

[0070] The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is a combination of GaN, AlInGaN, AlGaN, and the period number m is 3;

[0071] The upper waveguide layer 104 is a combination of InGaN, AlInGaN, with a thickness of 100 nm;

[0072] The strain-induced exciton response layer 107 is a core-shell structure of a KV3Sb5 / ReO3 / RbV3Sb5 / CsV3Sb5 / KSbO3 five-element combination;

[0073] The electron blocking layer 105 is a combination of AlInGaN, AlN, AlInN, with a thickness of 100 nm;

[0074] The upper confining layer 106 is a combination of AlInGaN, AlN, AlInN, with a thickness of 100 nm; Embodiment 5

[0075] This embodiment provides a semiconductor laser element 5 with a strain-induced exciton response layer, the structure is as shown in Figure 1 The structure sequentially includes a substrate 100, a lower confining layer 101, a strain-induced exciton response layer 107, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confining layer 106 from bottom to top; Specifically:

[0076] The substrate 100 is a GaN substrate;

[0077] The lower confining layer 101 is a combination of InGaN, AlInN, with a thickness of 100 nm and a Si doping concentration of 1E19 cm -3 ;

[0078] The lower waveguide layer 102 is a combination of InGaN, AlInGaN, with a thickness of 100 nm;

[0079] The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is a combination of GaN, AlInN, and the period number m is 3;

[0080] The upper waveguide layer 104 is a combination of GaN, AlInGaN, and has a thickness of 500 nm;

[0081] The strain-induced exciton response layer 107 is a quantum dot structure and a heterojunction structure of a KV3Sb5 / WSe2 / ReO3 / RbV3Sb5 / CsV3Sb5 / KSbO3 six-element combination, and has a thickness of 100 nm;

[0082] The electron blocking layer 105 is a combination of GaN, AlN, and AlInN, and has a thickness of 500 nm;

[0083] The upper confinement layer 106 is a combination of GaN, AlGaN, and AlN, and has a thickness of 500 nm.

[0084] The semiconductor laser elements in the above comparative examples and the semiconductor laser elements with the strain-induced exciton response layer in Examples 1-5 were subjected to performance tests, and the results are shown in Table 1 below:

[0085] Table 1 Performance test data of semiconductor laser elements in comparative examples and Examples 1-5

[0086] Item Comparative Example 1 Example 1 Example 2 Example 3 Example 4 Example 5 Beam quality factor M2 6.7 3.6 3.4 3.5 3.3 3.7 Slope efficiency (W / A) 0.8 1.5 1.6 1.6 1.5 1.4 threshold current density (kA / cm 2 ) 2.4 1.2 1.3 1.4 1.3 1.2 Optical power (W) 3.5 4.8 4.9 4.8 5.0 4.7

[0087] As can be seen from Table 1 above, the semiconductor laser element with the strain-induced exciton response layer of the present application has a beam quality factor M2 of less than 4, a slope efficiency of more than 1.4 W / A, and a threshold current density of less than 2 kA / cm 2 The optical power is increased from 3.5 W to more than 4.7 W, reaching the level of commercial application.

[0088] Those skilled in the art should understand that the above description is only some specific embodiments of the present application, not all embodiments. It should be noted that many modifications and improvements can be made by those skilled in the art, and all modifications and improvements that do not exceed the scope of the claims should be considered as the protection scope of the present application.

Claims

1. A semiconductor laser element having a strain-induced exciton response layer, which comprises, in order from the bottom upward, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106), characterized in that, A strain-induced exciton response layer (107) is arranged between the upper waveguide layer (104) and the electron blocking layer (105), the strain-induced exciton response layer (107) is a specific structure formed by any two or more of KV3Sb5, WSe2, ReO3, RbV3Sb5, CsV3Sb5, KSbO3, the specific structure is any one or a combination of two or more of a heterojunction structure, a superlattice structure, a quantum well structure, a core-shell structure, and a quantum dot structure.

2. The semiconductor laser element having a strain-induced exciton response layer according to claim 1, characterized by, The thickness of the strain-induced exciton response layer (107) is 5-500nm.

3. The semiconductor laser element having a strain-induced exciton response layer according to claim 1, characterized by, The lower confinement layer (101) and the upper confinement layer (106) are one or more than two combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, with a thickness of 50-5000nm and a Si doping concentration of 1E18-1E20cm -3 .

4. The semiconductor laser element having a strain-induced exciton response layer according to claim 1, characterized by, The lower waveguide layer (102) and the upper waveguide layer (104) are one or a combination of two or more of GaN, InGaN, and AlInGaN, and the thickness is 50-1000nm.

5. The semiconductor laser element having a strain-induced exciton response layer according to claim 1, characterized by, The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is one or a combination of two or more of GaN, AlInGaN, AlGaN, and AlInN, and the period number m satisfies 4≥m≥1.

6. The semiconductor laser element having a strain-induced exciton response layer according to claim 1, characterized by, The electron blocking layer (105) is one or a combination of two or more of GaN, AlGaN, AlInGaN, AlN, and AlInN, and the thickness is 20-1000nm.

7. The semiconductor laser element having a strain-induced exciton response layer according to claim 1, characterized by, The substrate (100) is any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, a sapphire-SiO2 composite substrate, a sapphire-AlN composite substrate, sapphire-SiNx, a sapphire-SiO2-SiNx composite substrate, magnesium aluminum spinel, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2.

8. The semiconductor laser element having a strain-induced exciton response layer according to claim 1, characterized by, The lower confining layer (101) is an AlGaN layer with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm -3 The upper confining layer (106) is an AlInGaN layer with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm -3 The lower waveguide layer (102) is a GaN layer with a thickness of 50-1000 nm; the upper waveguide layer (104) is an InGaN layer with a thickness of 50-1000 nm; and the active layer (103) is a periodic structure composed of a well layer and a barrier layer, the well layer being an InGaN well layer and the barrier layer being GaN, the number of periods m satisfying 4≥m≥1.

9. The semiconductor laser element having a strain-induced exciton response layer according to claim 1, characterized by, The strain-induced exciton response layer (107) is any one or a combination of two or more of the following binary combinations: KV3Sb5 / WSe2, KV3Sb5 / ReO3, KV3Sb5 / RbV3Sb5, KV3Sb5 / CsV3Sb5, KV3Sb5 / KSbO3, WSe2 / ReO3, WSe2 / RbV3Sb5, WSe2 / CsV3Sb5, WSe2 / KSbO3, ReO3 / RbV3Sb5, ReO3 / CsV3Sb5, ReO3 / KSbO3, RbV3Sb5 / CsV3Sb5, RbV3Sb5 / KSbO3, CsV3Sb5 / KSbO3.

10. The semiconductor laser element having a strain-induced exciton response layer according to claim 1, characterized by, The strain-induced exciton response layer (107) is any one or a combination of two or more of the following ternary combinations: KV3Sb5 / WSe2 / ReO3, KV3Sb5 / WSe2 / RbV3Sb5, KV3Sb5 / WSe2 / CsV3Sb5, KV3Sb5 / WSe2 / KSbO3, KV3Sb5 / ReO3 / RbV3Sb5, KV3Sb5 / ReO3 / CsV3Sb5, KV3Sb5 / ReO3 / KSbO3, KV3Sb5 / RbV3Sb5 / CsV3Sb5, KV3Sb5 / RbV3Sb5 / KSbO3, KV3Sb5 / CsV3Sb5 / KSbO3, WSe2 / ReO3 / RbV3Sb5, WSe2 / ReO3 / CsV3Sb5, WSe2 / ReO3 / KSbO3, WSe2 / RbV3Sb5 / CsV3Sb5, WSe2 / RbV3Sb5 / KSbO3, WSe2 / CsV3Sb5 / KSbO3, ReO3 / RbV3Sb5 / CsV3Sb5, ReO3 / RbV3Sb5 / KSbO3, ReO3 / CsV3Sb5 / KSbO3, RbV3Sb5 / CsV3Sb5 / KSbO3.

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