A semiconductor laser device provided with a quantum-confined Stark effect modulation layer

Abstract

The present invention provides a semiconductor laser device provided with a quantum-confined Stark modulation layer, which sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer from bottom to top; quantum-confined Stark modulation layers are provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer; the quantum-confined Stark modulation layer utilizes the current-induced ferroelectric phase transition polarization effect to cause magnetostriction and ferrovalley coupling effects to regulate the strain field and polarization direction reversal under current injection conditions in the laser, modulate the piezoelectric polarization and spontaneous polarization fields of the laser, reduce the quantum-confined Stark effect, lower the valence band offset of the laser device, improve the uniformity of hole injection and laser gain uniformity, increase the overlap probability of the electron-hole wave functions in the active layer of the laser, enhance the stimulated emission of the laser device, reduce the excitation threshold of the laser device, enhance the confinement factor, and improve the peak gain of the laser device.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and more particularly, to a semiconductor laser device provided with a quantum-confined Stark effect modulation layer. Background Art

[0002] Lasers are widely used in the fields of laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers and various classification methods. The main types include solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small volume, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization. There are significant differences between lasers and nitride semiconductor light-emitting diodes: 1) Laser is generated by stimulated emission of carriers, with a relatively small spectral full width at half maximum, very high brightness, and the output power of a single laser can reach the watt level, while nitride semiconductor light-emitting diodes are spontaneous emission, and the output power of a single light-emitting diode is at the milliwatt level; 2) The operating current density of lasers reaches kA / cm², which is more than two orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effects, and more serious electron-hole mismatch, leading to a more serious efficiency droop effect; 3) Light-emitting diodes undergo spontaneous transition radiation, which is incoherent light that jumps from a high energy level to a low energy level without external influence, while lasers are stimulated transition radiation, and the energy of the induced photons should be equal to the energy difference between the electron transition levels, generating completely identical coherent light of photons and induced photons; 4) Different principles: Light-emitting diodes generate radiative recombination luminescence when electrons and holes jump to the quantum well or p-n junction under the action of an external voltage, while lasers can only lasing when the lasing conditions are met. It must satisfy the condition of carrier population inversion in the active region. The stimulated emission light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. When the threshold condition is satisfied, the gain is greater than the loss, and finally, laser light is output.The nitride semiconductor laser has the following problems: 1. The large lattice mismatch and strain in the active layer induce a strong piezopolarization effect, resulting in a strong QCSE (Quantum Confined Stark Effect). The valence band offset of the laser increases, making it more difficult for holes to transport in the quantum well. The carrier injection is uneven, and the gain is uneven, which limits the improvement of the electrical lasing gain of the laser; 2. The Mg acceptor in the p-type semiconductor has a large activation energy and low ionization efficiency. The hole concentration is much lower than the electron concentration, and the hole mobility is much smaller than the electron mobility. Moreover, problems such as the quantum well polarization electric field increasing the hole injection barrier and holes overflowing from the active layer lead to uneven hole injection and low efficiency, resulting in a serious asymmetry and mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization. It is more difficult for holes to transport in the quantum well, the carrier injection is uneven, and the gain is uneven. At the same time, the gain spectrum of the laser broadens, and the peak gain decreases, resulting in an increase in the threshold current of the laser and a decrease in the slope efficiency; 3. An increase in the In composition of the quantum well will cause In composition fluctuations and strain, the gain spectrum of the laser broadens, and the peak gain decreases; as the In composition of the quantum well increases, the thermal stability deteriorates. The growth of the high-temperature p-type semiconductor and the confinement layer will cause thermal degradation of the active layer, reducing the quality of the active layer and the interface quality; the internal defect density of the active layer is high, the mutual solubility gap between InN and GaN is large, InN phase separation and segregation, thermal degradation, and the crystal quality is not ideal, resulting in an unsatisfactory quality of the quantum well and the interface quality, and increasing the non-radiative recombination center. Summary of the Invention

[0003] The purpose of the present invention is to provide a semiconductor laser element provided with a quantum-confined Stark modulation layer, which solves the problems existing in the prior art.

[0004] A semiconductor laser element provided with a quantum-confined Stark modulation layer includes, from bottom to top in sequence, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. Quantum-confined Stark modulation layers are provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer.

[0005] As a preferred technical solution of the present invention, the quantum-confined Stark modulation layer utilizes the current-induced ferroelectric phase transition polarization effect to enable the laser to generate magnetostriction and ferrovalley coupling effects under current injection conditions to regulate the strain field and polarization direction reversal, modulate the piezoelectric polarization and spontaneous polarization fields of the laser, reduce the quantum-confined Stark effect, lower the valence band offset of the laser element, improve the uniformity of hole injection and laser gain uniformity, increase the overlap probability of the electron-hole wave functions in the active layer of the laser, enhance the stimulated emission of the laser element, reduce the excitation threshold of the laser element, enhance the confinement factor, increase the peak gain of the laser element. At the same time, the quantum-confined Stark modulation layer generates domain wall motion and lattice displacement-induced antiferroelectric-ferroelectric phase transition, suppresses the phase separation and segregation of the InN in the active layer, reduces the In component fluctuation, improves the interface quality, reduces the non-radiative recombination center, and increases the laser power and slope efficiency.

[0006] As a preferred technical solution of the present invention, the quantum-confined Stark modulation layer is ZrW 2 O 8 、ScF 3 、CoSe 2 、Fe 3 C、LaCu 3 Fe 4 O 12 、Yb 8 Ge 3 Sb 5 any one or any combination thereof.

[0007] As a preferred technical solution of the present invention, any combination of the quantum-confined Stark modulation layers includes the following binary combination of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dot structures: ZrW 2 O 8 / ScF 3 ,ZrW 2 O 8 / CoSe 2 ,ZrW 2 O 8 / Fe 3 C,ZrW 2 O 8 / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / Yb 8 Ge 3 Sb 5 ,ScF 3 / CoSe 2 ,ScF 3 / Fe 3 C,ScF 3 / LaCu 3 Fe 4 O 12 ,ScF 3 / Yb 8 Ge 3 Sb 5 ,CoSe 2 / Fe 3 C,CoSe 2 / LaCu 3 Fe 4 O 12 ,CoSe 2 / Yb 8 Ge 3 Sb 5 ,Fe 3 C / LaCu 3 Fe 4 O 12 ,Fe 3 C / Yb 8 Ge 3 Sb 5 ,LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 。

[0008] As a preferred technical solution of the present invention, any combination of the quantum confinement Stark modulation layers includes heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of the following ternary combinations: ZrW 2 O 8 / ScF 3 / CoSe 2 ,ZrW 2 O 8 / ScF 3 / Fe 3 C,ZrW 2 O 8 / ScF 3 / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / ScF 3 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / CoSe 2 / Fe 3 C,ZrW 2 O 8 / CoSe 2 / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / CoSe 2 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / Fe 3 C / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / Fe 3 C / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ScF 3 / CoSe 2 / Fe 3 C,ScF 3 / CoSe 2 / LaCu 3 Fe 4 O 12 ,ScF 3 / CoSe 2 / Yb 8 Ge 3 Sb 5 ,ScF 3 / Fe 3 C / LaCu 3 Fe 4 O 12 ,ScF 3 / Fe 3 C / Yb 8 Ge 3 Sb 5 ,ScF 3 / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,CoSe 2 / Fe 3 C / LaCu3 Fe 4 O 12 , CoSe 2 / Fe 3 C / Yb 8 Ge 3 Sb 5 , CoSe 2 / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 , Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 。

[0009] As a preferred technical solution of the present invention, any combination of the quantum confinement Stark modulation layers includes the following four - element combination of heterojunctions, superlattices, quantum wells, core - shell structures, and quantum dot structures: ZrW 2 O 8 / ScF 3 / CoSe 2 / Fe 3 C, ZrW 2 O 8 / ScF 3 / CoSe 2 / LaCu 3 Fe 4 O 12 , ZrW 2 O 8 / ScF 3 / CoSe 2 / Yb 8 Ge 3 Sb 5 , ZrW 2 O 8 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 , ZrW 2 O 8 / CoSe 2 / Fe 3 C / Yb 8 Ge 3 Sb 5 , ZrW 2 O 8 / Fe3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ScF 3 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 ,ScF 3 / CoSe 2 / Fe 3 C / Yb 8 Ge 3 Sb 5 ,ScF 3 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 。

[0010] As a preferred technical solution of the present invention, any combination of the quantum confinement Stark modulation layers includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of five-element and six-element combinations: ZrW 2 O 8 / ScF 3 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / ScF 3 / CoSe 2 / Fe 3 C / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / ScF 3 / CoSe 2 / LaCu 3 Fe4 O 12 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / ScF 3 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ScF 3 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / ScF 3 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 53 。

[0011] As a preferred technical solution of the present invention, the thickness of the quantum confinement Stark modulation layer is 5 - 500 nm.

[0012] As a preferred technical solution of the present invention, the lower confinement layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer, and the upper confinement layer include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3 , BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0013] As a preferred technical solution of the present invention, the substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 、MgO, ZnO, ZrB 2 、LiAlO 2 and LiGaO 2 Any one of the composite substrates.

[0014] Compared with the prior art, the beneficial effects of the present invention are:

[0015] In the solution of the present invention:

[0016] A quantum-confined Stark modulation layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer; the quantum-confined Stark modulation layer is ZrW 2 O 8 、ScF 3 、CoSe 2 、Fe 3 C、LaCu 3 Fe 4 O 12 、Yb 8 Ge 3 Sb 5 Any one or any combination; the quantum-confined Stark modulation layer is ZrW 2 O 8 、ScF 3 、CoSe 2 、Fe 3 C、LaCu 3 Fe 4 O 12 、Yb 8 Ge 3 Sb 5Any one or any combination thereof; the quantum-confined Stark modulation layer utilizes the current-induced ferroelectric phase transition polarization effect to enable the laser to generate magnetostriction and ferrovalley coupling effects under current injection conditions to regulate the strain field and polarization direction flipping, modulate the piezoelectric polarization and spontaneous polarization fields of the laser, reduce the quantum-confined Stark effect, lower the valence band offset of the laser element, improve the uniformity of hole injection and laser gain uniformity, increase the overlap probability of the electron-hole wave functions in the active layer of the laser, enhance the stimulated emission of the laser element, lower the excitation threshold of the laser element, enhance the confinement factor, increase the peak gain of the laser element. At the same time, the quantum-confined Stark modulation layer generates domain wall motion and lattice displacement-induced antiferroelectric-ferroelectric phase transition, suppresses InN phase separation and segregation in the active layer, reduces In composition fluctuations, improves the interface quality, reduces non-radiative recombination centers, and increases the laser power and slope efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 FIG. 4 is a schematic structural diagram of a semiconductor laser element provided with a quantum-confined Stark modulation layer according to the present invention.

[0018] Reference numerals in the figure:[[]]END]]

[0019] 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer, 105: Electron blocking layer, 106: Upper confinement layer, 107: Quantum-confined Stark modulation layer. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention.

[0021] Therefore, the following detailed description of the embodiments of the present invention is not intended to limit the scope of the claimed invention, but merely represents some embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0022] It should be noted that, without conflict, the embodiments in the present invention and the features and technical solutions in the embodiments may be combined with each other.

[0023] Embodiment 1

[0024] Please refer to Figure 1, this embodiment provides a technical solution: a semiconductor laser element provided with a quantum-confined Stark effect modulation layer. The semiconductor laser element provided with a quantum-confined Stark effect modulation layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A quantum-confined Stark effect modulation layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0025] The quantum-confined Stark effect modulation layer 107 utilizes the current-induced ferroelectric phase transition polarization effect to generate magnetostriction and ferrovalley coupling effects under current injection conditions to regulate the strain field and polarization direction flipping, modulate the piezoelectric polarization and spontaneous polarization fields of the laser, reduce the quantum-confined Stark effect, lower the valence band offset of the laser element, improve the uniformity of hole injection and laser gain uniformity, increase the overlap probability of the electron-hole wave functions in the active layer of the laser, enhance the stimulated emission of the laser element, lower the excitation threshold of the laser element, enhance the confinement factor, increase the peak gain of the laser element. At the same time, the quantum-confined Stark effect modulation layer generates domain wall motion and antiferroelectric-ferroelectric phase transition induced by lattice displacement, suppresses InN phase separation and segregation in the active layer, reduces In component fluctuations, improves the interface quality, reduces non-radiative recombination centers, and increases the laser power and slope efficiency.

[0026] The quantum-confined Stark effect modulation layer 107 is ZrW 2 O 8 、ScF 3 、CoSe 2 、Fe 3 C、LaCu 3 Fe 4 O 12 、Yb 8 Ge 3 Sb 5 any one of them.

[0027] The thickness of the quantum-confined Stark effect modulation layer 107 is 5 - 500 nm.

[0028] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multi-element combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3 、BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0029] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 and LiGaO 2 composite substrate.

[0030] Example 2

[0031] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a quantum-confined Stark tuning layer, a semiconductor laser element provided with a quantum-confined Stark tuning layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. A quantum-confined Stark tuning layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0032] The quantum-confined Stark tuning layer 107 utilizes the current-induced ferroelectric phase transition polarization effect to cause magnetostriction and ferrovalley coupling effects in the laser under current injection conditions to regulate the strain field and polarization direction reversal, modulate the piezoelectric polarization and spontaneous polarization fields of the laser, reduce the quantum-confined Stark effect, lower the valence band offset of the laser element, improve the uniformity of hole injection and laser gain uniformity, increase the overlap probability of the electron-hole wave functions in the active layer of the laser, enhance the stimulated emission of the laser element, lower the excitation threshold of the laser element, enhance the confinement factor, and increase the peak gain of the laser element. At the same time, the quantum-confined Stark tuning layer generates domain wall motion and lattice displacement-induced antiferroelectric-ferroelectric phase transitions, suppresses InN phase separation and segregation in the active layer, reduces In component fluctuations, improves the interface quality, reduces non-radiative recombination centers, and increases the laser power and slope efficiency.

[0033] Any combination of the quantum-confined Stark tuning layers 107 includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of binary combinations: ZrW 2 O 8 / ScF 3 , ZrW 2 O 8 / CoSe 2 , ZrW 2 O 8 / Fe 3 C, ZrW 2O 8 / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / Yb 8 Ge 3 Sb 5 ,ScF 3 / CoSe 2 ,ScF 3 / Fe 3 C,ScF 3 / LaCu 3 Fe 4 O 12 ,ScF 3 / Yb 8 Ge 3 Sb 5 ,CoSe 2 / Fe 3 C,CoSe 2 / LaCu 3 Fe 4 O 12 ,CoSe 2 / Yb 8 Ge 3 Sb 5 ,Fe 3 C / LaCu 3 Fe 4 O 12 ,Fe 3 C / Yb 8 Ge 3 Sb 5 ,LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3 , BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0034] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 and LiGaO 2 composite substrate.

[0035] Example 3

[0036] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a quantum-confined Stark modulation layer. The semiconductor laser element provided with a quantum-confined Stark modulation layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A quantum-confined Stark modulation layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0037] The quantum-confined Stark modulation layer 107 utilizes the current-induced ferroelectric phase transition polarization effect to cause magnetostriction and ferrovalley coupling effects in the laser under current injection conditions to regulate the strain field and polarization direction flipping, modulate the piezoelectric polarization and spontaneous polarization fields of the laser, reduce the quantum-confined Stark effect, lower the valence band offset of the laser element, improve the uniformity of hole injection and laser gain uniformity, increase the overlap probability of the electron-hole wave functions in the active layer of the laser, enhance the stimulated emission of the laser element, reduce the excitation threshold of the laser element, enhance the confinement factor, and increase the peak gain of the laser element. At the same time, the quantum-confined Stark modulation layer generates domain wall motion and lattice displacement-induced antiferroelectric-ferroelectric phase transition, suppresses InN phase separation and segregation in the active layer, reduces In composition fluctuations, improves the interface quality, reduces non-radiative recombination centers, and increases the laser power and slope efficiency.

[0038] Any combination of the quantum-confined Stark modulation layers 107 includes the following ternary combination of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: ZrW 2 O 8 / ScF 3 / CoSe 2 , ZrW 2 O 8 / ScF 3 / Fe 3 C, ZrW 2 O 8 / ScF3 / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / ScF 3 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / CoSe 2 / Fe 3 C,ZrW 2 O 8 / CoSe 2 / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / CoSe 2 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / Fe 3 C / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / Fe 3 C / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ScF 3 / CoSe 2 / Fe 3 C,ScF 3 / CoSe 2 / LaCu 3 Fe 4 O 12 ,ScF 3 / CoSe 2 / Yb 8 Ge 3 Sb 5 ,ScF 3 / Fe 3 C / LaCu 3 Fe4 O 12 , ScF 3 / Fe 3 C / Yb 8 Ge 3 Sb 5 , ScF 3 / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 , CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 , CoSe 2 / Fe 3 C / Yb 8 Ge 3 Sb 5 , CoSe 2 / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 , Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 。

[0039] The thickness of the quantum confinement Stark modulation layer 107 is 5 - 500 nm.

[0040] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3 , BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0041] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 and LiGaO 2 composite substrate.

[0042] Example 4

[0043] Please refer to Figure 1 . This embodiment provides a technical solution: a semiconductor laser element provided with a quantum-confined Stark tuning layer. The semiconductor laser element provided with a quantum-confined Stark tuning layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A quantum-confined Stark tuning layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0044] The quantum-confined Stark tuning layer 107 utilizes the current-induced ferroelectric phase transition polarization effect to cause magnetostriction and ferrovalley coupling effects in the laser under current injection conditions to regulate the strain field and polarization direction reversal, modulate the piezoelectric polarization and spontaneous polarization fields of the laser, reduce the quantum-confined Stark effect, lower the valence band offset of the laser element, improve the uniformity of hole injection and laser gain uniformity, increase the overlap probability of the electron-hole wave functions in the active layer of the laser, enhance the stimulated emission of the laser element, lower the excitation threshold of the laser element, enhance the confinement factor, and increase the peak gain of the laser element. At the same time, the quantum-confined Stark tuning layer generates domain wall motion and lattice displacement-induced antiferroelectric-ferroelectric phase transitions, inhibits InN phase separation and segregation in the active layer, reduces In composition fluctuations, improves the interface quality, reduces non-radiative recombination centers, and increases the laser power and slope efficiency.

[0045] Any combination of the quantum-confined Stark tuning layers 107 includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of a quaternary combination: ZrW 2 O 8 / ScF 3 / CoSe 2 / Fe 3 C, ZrW 2 O 8 / ScF 3 / CoSe 2 / LaCu 3 Fe4 O 12 , ZrW 2 O 8 / ScF 3 / CoSe 2 / Yb 8 Ge 3 Sb 5 , ZrW 2 O 8 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 , ZrW 2 O 8 / CoSe 2 / Fe 3 C / Yb 8 Ge 3 Sb 5 , ZrW 2 O 8 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 , ScF 3 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 , ScF 3 / CoSe 2 / Fe 3 C / Yb 8 Ge 3 Sb 5 , ScF 3 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 , CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 。

[0046] The thickness of the quantum-confined Stark modulation layer 107 is 5 to 500 nm.

[0047] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multi-element combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3 , BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0048] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 and LiGaO 2 composite substrate.

[0049] Example 5

[0050] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser device provided with a quantum-confined Stark modulation layer, a semiconductor laser device provided with a quantum-confined Stark modulation layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. A quantum-confined Stark modulation layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0051] The quantum-confined Stark effect control layer 107 utilizes the current-induced ferroelectric phase transition polarization effect to enable the laser to generate magnetostriction and ferrovalley coupling effects under current injection conditions, regulate the strain field and polarization direction flipping, modulate the piezoelectric polarization and spontaneous polarization fields of the laser, reduce the quantum-confined Stark effect, lower the valence band offset of the laser component, improve the uniformity of hole injection and laser gain uniformity, increase the overlap probability of the electron-hole wave functions in the active layer of the laser, enhance the stimulated emission of the laser component, reduce the excitation threshold of the laser component, enhance the confinement factor, and increase the peak gain of the laser component. At the same time, the quantum-confined Stark effect control layer generates domain wall motion and lattice displacement-induced antiferroelectric-ferroelectric phase transitions, suppresses InN phase separation and segregation in the active layer, reduces In component fluctuations, improves the interface quality, reduces non-radiative recombination centers, and increases the laser power and slope efficiency.

[0052] Any combination of the quantum-confined Stark effect control layer 107 includes the following five-element combination of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: ZrW 2 O 8 / ScF 3 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / ScF 3 / CoSe 2 / Fe 3 C / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / ScF 3 / CoSe 2 / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / ScF 3 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / CoSe 2 / Fe 3C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ScF 3 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 。

[0053] The thickness of the quantum-confined Stark modulation layer 107 is 5 to 500 nm.

[0054] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3 , BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0055] The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 and LiGaO 2 any one of the composite substrates.

[0056] Example 6

[0057] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser device provided with a quantum-confined Stark modulation layer, a semiconductor laser device provided with a quantum-confined Stark modulation layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. A quantum-confined Stark modulation layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0058] The quantum-confined Stark effect control layer 107 utilizes the current-induced ferroelectric phase transition polarization effect to enable the laser to generate magnetostriction and ferrovalley coupling effects under current injection conditions, regulating the strain field and polarization direction flipping, modulating the piezoelectric polarization and spontaneous polarization fields of the laser, reducing the quantum-confined Stark effect, lowering the valence band offset of the laser element, improving the uniformity of hole injection and laser gain uniformity, increasing the overlap probability of the electron-hole wave functions in the active layer of the laser, enhancing the stimulated emission of the laser element, reducing the excitation threshold of the laser element, enhancing the confinement factor, increasing the peak gain of the laser element. At the same time, the quantum-confined Stark effect control layer generates domain wall motion and antiferroelectric-ferroelectric phase transition induced by lattice displacement, inhibits the phase separation and segregation of the InN in the active layer, reduces the In component fluctuation, improves the interface quality, reduces the non-radiative recombination center, and increases the laser power and slope efficiency.

[0059] Any combination of the quantum-confined Stark effect control layer 107 includes the following six-element combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: ZrW 2 O 8 / ScF 3 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 53 。

[0060] The thickness of the quantum-confined Stark effect control layer 107 is 5 - 500 nm.

[0061] The lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, and upper confinement layer 106 include any one or any multi-element combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3 , BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0062] The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4, MgO, ZnO, ZrB 2 , LiAlO 2 and LiGaO 2 Any one of the composite substrates.

[0063] Compared with the prior art, in the present invention, a quantum-confined Stark modulation layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer; the quantum-confined Stark modulation layer is ZrW 2 O 8 , ScF 3 , CoSe 2 , Fe 3 C, LaCu 3 Fe 4 O 12 , Yb 8 Ge 3 Sb 5 Any one or any combination thereof; the quantum-confined Stark modulation layer is ZrW 2 O 8 , ScF 3 , CoSe 2 , Fe 3 C, LaCu 3 Fe 4 O 12 , Yb 8 Ge 3 Sb 5 Any one or any combination thereof; the quantum-confined Stark modulation layer utilizes the current-induced ferroelectric phase transition polarization effect to generate magnetostriction and ferrovalley coupling effects under current injection conditions to regulate the strain field and polarization direction flipping of the laser, modulate the piezoelectric polarization and spontaneous polarization fields of the laser, reduce the quantum-confined Stark effect, lower the valence band offset of the laser element, improve the uniformity of hole injection and laser gain uniformity, increase the overlap probability of the electron-hole wave functions in the active layer of the laser, enhance the stimulated emission of the laser element, lower the excitation threshold of the laser element, enhance the confinement factor, increase the peak gain of the laser element. At the same time, the quantum-confined Stark modulation layer generates domain wall motion and lattice displacement-induced antiferroelectric-ferroelectric phase transition, inhibits the phase separation and segregation of the InN phase in the active layer, reduces the In composition fluctuation, improves the interface quality, reduces the non-radiative recombination center, and increases the laser power and slope efficiency.

[0064] The above embodiments are only used to illustrate the present invention and do not limit the technical solutions described in the present invention. Although this specification has described the present invention in detail with reference to the above respective embodiments, the present invention is not limited to the above specific embodiments. Therefore, any modification or equivalent replacement of the present invention; and all technical solutions and improvements that do not depart from the spirit and scope of the invention are covered by the scope of the claims of the present invention.

Claims

1. A semiconductor laser device provided with a quantum-confined Stark effect modulation layer, which sequentially includes a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106) from bottom to top. It is characterized in that: A quantum-confined Stark effect modulation layer (107) is provided between the active layer (103) and the upper waveguide layer (104) and between the active layer (103) and the lower waveguide layer. The quantum-confined Stark effect modulation layer (107) utilizes the current-induced ferroelectric phase transition polarization effect to generate magnetostriction and ferrovalley coupling effects under current injection conditions to regulate the strain field and polarization direction flipping, modulate the piezoelectric polarization and spontaneous polarization fields of the laser, reduce the quantum-confined Stark effect, lower the valence band offset of the laser device, improve the uniformity of hole injection and laser gain uniformity, increase the overlap probability of the electron-hole wave functions in the active layer of the laser, enhance the stimulated emission of the laser device, lower the excitation threshold of the laser device, enhance the confinement factor, and increase the peak gain of the laser device. At the same time, the quantum-confined Stark effect modulation layer generates domain wall motion and antiferroelectric-ferroelectric phase transition induced by lattice displacement, inhibits the phase separation and segregation of the InN phase in the active layer, reduces the In composition fluctuation, improves the interface quality, reduces the non-radiative recombination center, and increases the laser power and slope efficiency.

2. A semiconductor laser device provided with a quantum-confined Stark effect modulation layer as described in claim 1, It is characterized in that, The quantum confinement Stark modulation layer (107) is ZrW 2 O 8 、ScF 3 、CoSe 2 、Fe 3 C、LaCu 3 Fe 4 O 12 、Yb 8 Ge 3 Sb 5 any one or any combination thereof.

3. A semiconductor laser device provided with a quantum-confined Stark effect modulation layer as described in claim 2, It is characterized in that, Any combination of the quantum confinement Stark modulation layer (107) includes the following binary combination of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: ZrW 2 O 8 / ScF 3 ,ZrW 2 O 8 / CoSe 2 ,ZrW 2 O 8 / Fe 3 C,ZrW 2 O 8 / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / Yb 8 Ge 3 Sb 5 ,ScF 3 / CoSe 2 ,ScF 3 / Fe 3 C,ScF 3 / LaCu 3 Fe 4 O 12 ,ScF 3 / Yb 8 Ge 3 Sb 5 ,CoSe 2 / Fe 3 C,CoSe 2 / LaCu 3 Fe 4 O 12 ,CoSe 2 / Yb 8 Ge 3 Sb 5 ,Fe 3 C / LaCu 3 Fe 4 O 12 ,Fe 3 C / Yb 8 Ge 3 Sb 5 ,LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 。 4. A semiconductor laser device provided with a quantum-confined Stark effect modulation layer as described in claim 2, It is characterized in that, Any combination of the quantum confinement Stark modulation layer (107) includes the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: ZrW 2 O 8 / ScF 3 / CoSe 2 ,ZrW 2 O 8 / ScF 3 / Fe 3 C,ZrW 2 O 8 / ScF 3 / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / ScF 3 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / CoSe 2 / Fe 3 C,ZrW 2 O 8 / CoSe 2 / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / CoSe 2 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / Fe 3 C / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / Fe 3 C / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ScF 3 / CoSe 2 / Fe 3 C,ScF 3 / CoSe 2 / LaCu 3 Fe 4 O 12 ,ScF 3 / CoSe 2 / Yb 8 Ge 3 Sb 5 ,ScF 3 / Fe 3 C / LaCu 3 Fe 4 O 12 ,ScF 3 / Fe 3 C / Yb 8 Ge 3 Sb 5 ,ScF 3 / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 ,CoSe 2 / Fe 3 C / Yb 8 Ge 3 Sb 5 ,CoSe 2 / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 。 5. A semiconductor laser device provided with a quantum-confined Stark effect modulation layer as described in claim 2, It is characterized in that, Any combination of the quantum-confined Stark modulation layer (107) includes the following four-component combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: ZrW 2 O 8 / ScF 3 / CoSe 2 / Fe 3 C,ZrW 2 O 8 / ScF 3 / CoSe 2 / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / ScF 3 / CoSe 2 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / CoSe 2 / Fe 3 C / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ScF 3 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 ,ScF 3 / CoSe 2 / Fe 3 C / Yb 8 Ge 3 Sb 5 ,ScF 3 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 , CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 。 6. A semiconductor laser device provided with a quantum-confined Stark effect modulation layer as described in claim 2, It is characterized in that, Any combination of the quantum-confined Stark effect modulation layer (107) includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of five-element and six-element combinations: ZrW 2 O 8 / ScF 3 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 ,ZrW 2 O 8 / ScF 3 / CoSe 2 / Fe 3 C / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / ScF 3 / CoSe 2 / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / ScF 3 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ScF 3 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 ,ZrW 2 O 8 / ScF 3 / CoSe 2 / Fe 3 C / LaCu 3 Fe 4 O 12 / Yb 8 Ge 3 Sb 5 。 7. A semiconductor laser device provided with a quantum-confined Stark effect modulation layer as described in claim 1, It is characterized in that, The thickness of the quantum-confined Stark effect modulation layer (107) is 5 - 500 nm.

8. A semiconductor laser device provided with a quantum-confined Stark effect modulation layer as described in claim 1, It is characterized in that, The lower confinement layer (101), lower waveguide layer (102), active layer (103), upper waveguide layer (104), electron blocking layer (105), and upper confinement layer (106) include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga 2 O 3 , BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

9. A semiconductor laser device provided with a quantum-confined Stark effect modulation layer as described in claim 1, It is characterized in that, The substrate (100) includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 , and LiGaO 2 composite substrate.

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