Nucleation inhibition coating containing rare earth compounds and device for incorporating said nucleation inhibition coating

Abstract

An apparatus having multiple layers includes: a nucleation inhibition coating (NIC) disposed on a first layer surface in a first portion of a lateral aspect of the apparatus; and a deposition layer comprising a deposited material disposed on a second layer surface, wherein the initial adhesion probability of the deposition layer deposited on the surface of the NIC in the first portion is significantly less than the initial adhesion probability of the deposition layer deposited on the second layer surface, such that the NIC substantially lacks a sealing coating of the deposited material, and wherein the NIC comprises a compound containing a rare earth element. The deposition layer may include a sealing coating on the second layer surface in a second portion of the lateral aspect, and / or at least one discontinuous layer of particulate structure on the surface of the NIC.

Description

[0001] Related applications

[0002] This application claims the benefit of the following U.S. provisional patent applications: U.S. Provisional Patent Application No. 63 / 025,828, filed May 15, 2020; U.S. Provisional Patent Application No. 63 / 107,393, filed October 29, 2020; U.S. Provisional Patent Application No. 63 / 153,834, filed February 25, 2021; U.S. Provisional Patent Application No. 63 / 163,453, filed March 19, 2021; and U.S. Provisional Patent Application No. 63 / 181,100, filed April 28, 2021, the contents of each of which are incorporated herein by reference in their entirety. Technical Field

[0003] This disclosure relates to a layering device, and more particularly, to a patterned coating that can serve as and / or as a nucleation inhibition coating (NIC), and a layering device for forming an optoelectronic device having a first electrode and a second electrode separated by a semiconductor layer and having a deposition layer patterned using a patterned coating deposited on the semiconductor layer, the patterned coating serving as and / or as such a NIC. Background Technology

[0004] In optoelectronic devices such as organic light-emitting diodes (OLEDs), at least one semiconductive layer is disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode are electrically coupled to a power source and generate holes and electrons, respectively, which migrate toward each other through at least one semiconductive layer. When a pair of holes and electrons combine, photons can be emitted.

[0005] OLED display panels can include multiple (sub)pixels, each with an associated pair of electrodes. The various layers and coatings of such panels are typically formed using vacuum-based deposition techniques.

[0006] In some applications, there may be an objective to form device features (such as, but not limited to, electrodes and / or conductive elements electrically coupled to said electrodes) by selectively depositing at least one thin film of deposited material during OLED manufacturing, thereby providing a closed coating of conductive deposited material for each (sub)pixel of the panel across one or both of the lateral and cross-sectional aspects of the panel.

[0007] In some non-limiting applications, one approach to doing this involves inserting a fine metal mask (FMM) during the deposition of such deposited materials. However, the deposited materials typically used as electrodes have relatively high evaporation temperatures, which affects the ability to reuse the FMM and / or the pattern accuracy that can be achieved, while also increasing cost, workload, and complexity.

[0008] In some non-limiting instances, one approach to doing this involves depositing a material, and thereby including removing unwanted areas via a laser drilling process to form a pattern. However, the removal process typically involves the generation and / or presence of debris, which can affect the yield of the manufacturing process.

[0009] Furthermore, such methods may not be suitable for some applications and / or some devices with certain terrain features.

[0010] In some non-limiting applications, one goal may be to provide an improved mechanism for selective deposition of the deposited material. Attached Figure Description

[0011] Examples of this disclosure will now be described with reference to the following figures, wherein the same reference numerals in different figures indicate the same elements, and / or in some non-limiting instances indicate similar and / or corresponding elements, and in the figures:

[0012] Figure 1 This is an example energy line diagram showing the relative energy states of adsorbed atoms adsorbed onto a surface according to an example of this disclosure;

[0013] Figure 2 This is a schematic diagram illustrating the formation of a membrane core according to an example of this disclosure;

[0014] Figure 3A This is a simplified block diagram of an example device according to an example of the present disclosure from a cross-sectional perspective, the example device having multiple layers in a lateral aspect, the multiple layers being formed by selectively depositing a NIC in a first part of the lateral aspect and subsequently depositing a closed coating of deposited material in a second part thereof;

[0015] Figure 3B yes Figure 3A A plan view of the device in the image;

[0016] Figure 4 This illustrates an example of a method for use in accordance with the present disclosure. Figure 3A A schematic diagram of an example process for depositing a patterned coating on the surface of an exposed layer of underlying material in an example version of the apparatus;

[0017] Figure 5AThis is a schematic diagram illustrating an example process for depositing deposition material 531 onto the surface of an exposed layer in the second step, the exposed layer surface including... Figure 4 The deposition pattern of a patterned coating, wherein the patterned coating is a nucleation inhibition coating (NIC);

[0018] Figure 5B This is a schematic diagram illustrating an example process for depositing deposition material onto the surface of an exposed layer in the first step, the surface of which is substantially lacking... Figure 4 The patterned coating, wherein the patterned coating is a nucleation-promoting coating (NPC);

[0019] Figure 6A -D indicates that the example is applicable according to this disclosure. Figure 4 A schematic diagram of an example open mask for a process, wherein the open mask has holes therein;

[0020] Figure 7 This is a simplified block diagram of an example device according to an example of the present disclosure from a cross-sectional perspective, the example device having multiple layers in a transverse direction, the multiple layers being formed by selectively depositing NPC in a first part in the transverse direction and then depositing a closed coating of deposited material 531 thereon in the first part;

[0021] Figures 8A-8C This is based on the examples in this disclosure and has other example deposition steps. Figure 3A Example version of the device;

[0022] Figure 9A It is shown in a cross-sectional view Figure 3A A schematic diagram of an example version of the device;

[0023] Figure 9B This is shown in the supplementary plan view. Figure 9A A schematic diagram of the device;

[0024] Figure 9C , 9D And 9E is a demonstration Figure 9A A schematic diagram of an example version of the device;

[0025] Figure 10 This is a block diagram of the cross-sectional aspect of an example electroluminescent device according to the examples in this disclosure;

[0026] Figure 11 yes Figure 10 A cross-sectional view of an example backplane layer of the substrate of the device, the cross-sectional view showing a thin-film transistor (TFT) embodied therein;

[0027] Figure 12 For example, it can be made by Figure 11The circuit diagram of an example circuit provided by one or more TFTs in the backplane layer shown;

[0028] Figure 13 yes Figure 10 A cross-sectional view of the device;

[0029] Figure 14 yes Figure 10 A cross-sectional view of an example version of the device, the cross-sectional view showing at least one example pixel-defined layer (PDL) deposited to support at least one second electrode of the device;

[0030] Figure 15A This is a schematic diagram illustrating an example process for patterned coatings as NPCs deposited in a pattern on an exposed layer surface, the exposed layer surface including... Figure 3A The deposition pattern of the patterned coating;

[0031] Figure 15B This is a schematic diagram illustrating an example process for patterned deposition of a deposited layer on an exposed layer surface, the exposed layer surface comprising... Figure 15A The sedimentary patterns of the NPCs;

[0032] Figure 16A This illustrates an example of a method for use in accordance with the present disclosure. Figure 10 A schematic diagram of an example process for depositing NPCs in a pattern on the surface of an exposed layer of underlying material in an example version of the apparatus;

[0033] Figure 16B This is a schematic diagram illustrating an example process for patterned deposition of NICs on an exposed layer surface, the exposed layer surface including... Figure 16A The sedimentary patterns of the NPCs;

[0034] Figure 16C This is a schematic diagram illustrating an example process for patterned deposition of a deposited layer 330 on an exposed layer surface, the exposed layer surface including... Figure 16B The deposition pattern of the NIC;

[0035] Figures 17A-17C This illustrates an example of a method for use in accordance with the present disclosure. Figure 10 A schematic diagram of an example stage of an example printing process in an example version of the apparatus for depositing a selective coating in a pattern on the surface of an exposed layer;

[0036] Figure 18 The plan view shows the applicable examples according to this disclosure. Figure 10 A schematic diagram of an example patterned electrode for a version of the device;

[0037] Figure 19 It is a demonstration Figure 18A schematic diagram of an example cross-sectional view of the device taken along line 19-19;

[0038] Figure 20A The plan view shows the applicable examples according to this disclosure. Figure 10 A schematic diagram of several example patterns of electrodes for example versions of the device;

[0039] Figure 20B It is a demonstration Figure 20A A schematic diagram of an example cross-sectional view of the device taken along line 20B-20B;

[0040] Figure 20C It is a demonstration Figure 20A A schematic diagram of an example cross-sectional view of the device taken along line 20C-20C;

[0041] Figure 21 This demonstrates an example of a patterned auxiliary electrode according to an example of the present disclosure. Figure 10 A schematic diagram of a cross-sectional view of an example version of the device;

[0042] Figure 22A The examples in this disclosure are shown in plan view. Figure 10 A schematic diagram of an example arrangement of the emission area and / or non-emission area in an example version of the device;

[0043] Figure 22B-22D Each of them showcased Figure 22A A schematic diagram of a portion of the section, which shows an example auxiliary electrode covering a non-emission region according to an example in this disclosure;

[0044] Figure 23 The diagram is a plan view showing an example pattern of an auxiliary electrode covering at least one emitting region and at least one non-emitting region according to an example of the present disclosure;

[0045] Figure 24A The plan view shows an example of a diamond-shaped arrangement of multiple sets of emission areas according to the present disclosure. Figure 10 A schematic diagram of an example version of the device;

[0046] Figure 24B It is a demonstration Figure 24A A schematic diagram of an example cross-sectional view of the device taken along line 24B-24B;

[0047] Figure 24C It is a demonstration Figure 24A A schematic diagram of an example cross-sectional view of the device taken along line 24C-24C;

[0048] Figure 25This demonstrates additional example deposition steps according to the examples in this disclosure. Figure 13 A schematic diagram of an example cross-sectional view of an example version of the device;

[0049] Figure 26 This demonstrates additional example deposition steps according to the examples in this disclosure. Figure 13 A schematic diagram of an example cross-sectional view of an example version of the device;

[0050] Figure 27 This demonstrates additional example deposition steps according to the examples in this disclosure. Figure 13 A schematic diagram of an example cross-sectional view of an example version of the device;

[0051] Figure 28 This demonstrates additional example deposition steps according to the examples in this disclosure. Figure 13 A schematic diagram of an example cross-sectional view of an example version of the device;

[0052] Figures 29A-29C This illustrates an example of a selective deposition and subsequent removal process according to the present disclosure. Figure 13 A schematic diagram of an example stage of an example process for depositing a patterned deposition layer on the exposed surface of an example version of the apparatus;

[0053] Figure 30A The examples in this disclosure are shown in plan view. Figure 10 A schematic diagram of an example of a transparent version of the device, the transparent version including at least one example pixel area and at least one example light-transmitting area, and at least one auxiliary electrode;

[0054] Figure 30B It is a demonstration Figure 30A A schematic diagram of an example cross-sectional view of the device taken along line 30B-30B;

[0055] Figure 31A The examples in this disclosure are shown in plan view. Figure 10 A schematic diagram of an example of a transparent version of the device, the transparent version including at least one example pixel region and at least one example light-transmitting region;

[0056] Figure 31B It is a demonstration Figure 31A A schematic diagram of an example cross-sectional view of the device taken along line 31B-31B;

[0057] Figure 31C It is a demonstration Figure 31A A schematic diagram of an example cross-sectional view of the device taken along line 31B-31B;

[0058] Figures 32A-32D This illustrates an example of manufacturing according to the present disclosure. Figure 13 A schematic diagram of an example stage of an example process for providing an emission region with a second electrode of different thicknesses, in an example version of the device;

[0059] Figures 33A-33D This illustrates an example of manufacturing a sub-pixel region according to an example in this disclosure. Figure 13 A schematic diagram of an example stage of an example process for an example version of the device, wherein the sub-pixel region has a second electrode of different thickness;

[0060] Figure 34 This demonstrates examples based on this disclosure. Figure 13 A schematic diagram of an example cross-sectional view of an example version of the device, wherein the second electrode is coupled to the auxiliary electrode;

[0061] Figure 35A-35I This illustrates various examples according to this disclosure. Figure 13 A schematic diagram of various potential behaviors of the NIC at the deposition interface with a deposition layer in an example version of the device;

[0062] Figure 36 This demonstrates an example according to the present disclosure having septa and barrier areas (such as grooves) in its non-emission region. Figure 13 A schematic diagram of an example cross-sectional view of an example version of the device;

[0063] Figure 37A This illustrates an example according to the present disclosure having septa and barrier regions (such as grooves) in a non-emissive region prior to the deposition of a semiconductive layer thereon. Figure 13 A schematic diagram of an example cross-sectional view of an example version of the device;

[0064] Figures 37B-37P This illustrates the deposition of a semiconductive layer according to various examples in this disclosure. Figure 37A Schematic diagrams of various examples of the interaction between the partition, the second electrode and the NIC on which the deposition layer 330 is deposited;

[0065] Figure 38A-38G Examples are shown according to various instances in this disclosure. Figure 37A Schematic diagrams of various examples of auxiliary electrodes within the device;

[0066] Figures 39A-39B This illustrates various embodiments of the present disclosure that have septa and barrier regions (such as holes) in the non-emission area. Figure 13 A schematic diagram of an example cross-sectional view of an example version of the device.

[0067] In this disclosure, reference numerals appended with one or more numerical values ​​(including but not limited to subscripts) and / or alphabetic characters (including but not limited to lowercase) may be regarded as referring to a specific instance and / or subset of the element or feature described by the reference numeral. Referring to reference numerals without reference to the appended values ​​and / or characters, depending on the context, may generally refer to the element or feature described by the reference numeral, and / or the set of all instances described thereby.

[0068] In this disclosure, specific details are set forth for purposes of explanation and not limitation in order to provide a thorough understanding of the disclosure, including but not limited to particular architectures, interfaces, and / or technologies. In some instances, detailed descriptions of well-known systems, technologies, components, apparatuses, circuits, methods, and applications have been omitted to avoid obscuring the description of this disclosure with unnecessary detail.

[0069] Furthermore, it should be understood that the block diagrams reproduced herein may represent conceptual views of illustrative components that embody the technical principles of the present invention.

[0070] Therefore, where appropriate, system and method components have been represented by conventional symbols in the accompanying drawings, showing only those specific details relevant to understanding examples of this disclosure, so as not to obscure this disclosure by details that are obvious to those skilled in the art who benefit from the description herein.

[0071] Any accompanying drawings provided herein may not be drawn to scale and should not be considered as limiting this disclosure in any way.

[0072] In some instances, any feature or action shown in dashed outlines may be considered optional. Summary of the Invention

[0073] The purpose of this disclosure is to eliminate or mitigate at least one disadvantage of the prior art.

[0074] This disclosure discloses a layered device having multiple layers. In a first portion of the lateral aspect of the device, the device includes a patterned coating, such as a nucleation inhibition coating (NIC) disposed on the surface of a first layer at the bottom layer.

[0075] A deposition layer, including deposited material, is placed on the surface of the second layer.

[0076] The initial adhesion probability of the deposited material to the surface of the NIC in the first part is significantly lower than the initial adhesion probability of the deposited material to the surface of the second layer. Therefore, the NIC essentially lacks a sealing coating of the deposited material.

[0077] The NIC includes compounds containing rare earth elements.

[0078] The deposited layer may include a closed coating on the surface of the second layer in the second part of the lateral aspect, and / or at least one discontinuous layer with a particulate structure on the surface of the NIC.

[0079] According to a broad aspect of this disclosure, an apparatus having multiple layers is disclosed, the apparatus comprising: a nucleation inhibition coating (NIC) disposed on a first layer surface of a bottom layer in a first portion of a lateral aspect of the apparatus; and a deposition layer comprising a deposition material disposed on a second layer surface; wherein the initial adhesion probability of the deposition layer deposited on the surface of the NIC in the first portion is significantly less than the initial adhesion probability of the deposition layer deposited on the second layer surface, such that the NIC substantially lacks a sealing coating of the deposition material; and wherein the NIC comprises a compound containing a rare earth element.

[0080] In some non-limiting examples, the rare earth element may include at least one of the following: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), promethium (Pm), praseodymium (Pr), scandium (Sc), samarium (Sm), terbium (Tb), thulium (Tm), yttrium (Y), and ytterbium (Yb). In some non-limiting examples, the rare earth element may include Ce, Dy, Er, Eu, Gd, Ho, Lu, Nd, Pr, Sm, Tb, Tm, and Yb. In some non-limiting examples, the rare earth element may include Ce, Dy, Er, Eu, Gd, Ho, Lu, Nd, Sm, Tm, and Yb.

[0081] In some non-limiting examples, the compound may include oxides of the rare earth element. In some non-limiting examples, the oxide may include at least one of the following: CeO2, Dy2O3, Er2O3, Eu2O3, Gd2O3, Ho2O3, La2O3, Lu2O3, Nd2O3, Pr6O 11 , Pr2O3, PrO2, Pr2O5, Pm2O3, Sm2O3, Sc2O3, Tb7O 12 Tb2O3, TbO2, Tb3O7, Tm2O3, Yb2O3 and Y2O3.

[0082] In some non-limiting instances, the critical surface energy of the NIC may be less than about 30 dynes / cm.

[0083] In some non-limiting instances, the deposited layer may include a sealing coating on the surface of the second layer in the second part of the lateral aspect.

[0084] In some non-limiting embodiments, the apparatus may further include an interface coating in the second part, wherein the interface coating includes the rare earth element. In some non-limiting embodiments, the surface of the second layer may be the surface of the interface coating. In some non-limiting embodiments, the oxidation state of the rare earth element in the interface coating may be zero. In some non-limiting embodiments, the interface coating may be adjacent to the NIC in the lateral direction. In some non-limiting embodiments, the rare earth element may include Yb. In some non-limiting embodiments, the interface coating may include Yb. 0 The NIC may include Yb₂O₃. In some non-limiting examples, the critical surface energy of the NIC may be lower than the critical surface energy of the interface coating.

[0085] In some non-limiting embodiments, the second portion may include at least one emission region. In some non-limiting embodiments, the first portion may include at least a portion of a non-emission region. In some non-limiting embodiments, the emission region may include: a substrate; a first electrode; at least one semiconductive layer; and a second electrode; wherein the first electrode is located between the substrate and the at least one semiconductive layer; and wherein the at least one semiconductive layer is located between the first electrode and the second electrode. In some non-limiting embodiments, the deposited layer may be electrically coupled to the second electrode. In some non-limiting embodiments, the deposited layer may form at least a portion of the second electrode in the second portion. In some non-limiting embodiments, the second portion may include a separator and a third electrode in a barrier region of the separator, wherein the deposited layer is electrically coupled to the second electrode and the third electrode.

[0086] In some non-limiting instances, the deposited layer may include at least one discontinuous layer with a particulate structure, and the surface of the second layer may be the surface of the NIC.

[0087] In some non-limiting instances, the device may include at least one cover layer disposed on and forming an interface with the surface of the NIC, wherein the deposited layer is located at the interface.

[0088] In some non-limiting instances, the first part may include at least one emission region, and the deposition layer may be tuned to enhance the external coupling of at least one electromagnetic signal emitted by the emission region.

[0089] In some non-limiting examples, the resonance imparted by the at least one particulate structure can be tuned by selecting features chosen from at least one of the following: characteristic size, size distribution, shape, surface coverage, configuration, dispersion, material, and any combination thereof of the at least one particulate structure. In some non-limiting examples, the resonance can be tuned by changing at least one of the following: the deposition thickness of the deposited material, the average film thickness of the NIC, the thickness of the at least one capping layer, the metal composition of the deposited material, the dielectric constant of the at least one particulate structure, the degree to which the NIC is doped with organic materials of different compositions, the refractive index of the NIC, the extinction coefficient of the NIC, the material deposited as the at least one capping layer, the refractive index of the at least one capping layer, the extinction coefficient of the at least one capping layer, and any combination thereof.

[0090] In some non-limiting instances, the first portion may be substantially limited to the at least one transmission region. In some non-limiting instances, the first portion may be constrained by a second portion comprising the lateral aspect including at least one non-transmission region. In some non-limiting instances, the NIC may extend from the first portion into the second portion.

[0091] In some non-limiting examples, the emission region may include: a substrate; a first electrode; at least one semiconductive layer; and a second electrode; wherein the first electrode is located between the substrate and the at least one semiconductive layer; and wherein the at least one semiconductive layer is located between the first electrode and the second electrode. In some non-limiting examples, the bottom layer may include the second electrode. In some non-limiting examples, the bottom layer may include one of the at least one semiconductive layer. In some non-limiting examples, the bottom layer may be selected from at least one of: a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. In some non-limiting examples, the at least one capping layer may be selected from at least one of the electron transport layer and the electron injection layer. In some non-limiting examples, the deposition layer may include the second electrode. In some non-limiting examples, the deposition layer may be formed by deposition of the deposition material across the lateral aspect. In some non-limiting examples, the deposition material may form an electrode in the second portion. In some non-limiting examples, the electrode in the second portion may be an auxiliary electrode. In some non-limiting instances, the second part may include at least one additional emission region, and the electrode in the second part may be an electrode of the at least one additional emission region.

[0092] In some non-limiting embodiments, the at least one additional emission region may include: a substrate; a first electrode; at least one semiconductive layer; and a second electrode; wherein the first electrode is located between the substrate and the at least one semiconductive layer; and wherein the at least one semiconductive layer is located between the first electrode and the second electrode. In some non-limiting embodiments, the electrode in the second portion may include the second electrode of the at least one additional emission region. In some non-limiting embodiments, the electrode in the second portion may be a sealing coating of the deposited material.

[0093] In some non-limiting instances, the deposition material may include Mg. Detailed Implementation

[0094] optoelectronic devices

[0095] This disclosure generally relates to layered devices, and more specifically, to optoelectronic devices. Optoelectronic devices generally encompass any device that converts electrical signals into photons and vice versa.

[0096] Those skilled in the art will understand that although this disclosure pertains to optoelectronic devices, its principles can be applied to any panel having multiple layers, including but not limited to at least one layer of conductive deposited material 531. Figure 5A The thin film is included, and in some non-limiting instances, electromagnetic (EM) signals may pass through the thin film wholly or partially at an angle relative to the plane of at least one layer.

[0097] Thin film formation

[0098] During the vapor deposition process, on the surface of the exposed layer 11 of the bottom layer ( Figure 10 The formation of a thin film on a surface may involve nucleation and growth processes.

[0099] In the initial stages of film formation, a sufficient number of vapor monomers (which in some non-limiting instances may be molecules and / or atoms of the deposited material 531 in vapor form) can typically condense from the gas phase to form initial nuclei on the exposed surface 11 of the underlying layer. As the vapor monomers continue to bombard such surfaces, the characteristic size S1 and / or deposition density of these initial nuclei may increase to form small particulate structures 941 (Figure 9). Non-limiting instances of the size referred to by such characteristic size S1 may include the height, width, length, and / or diameter of such particulate structures 941.

[0100] After reaching saturated island density, adjacent particle structures 941 can typically begin to aggregate, thereby increasing the average characteristic size S1 of such particle structures 941 while reducing their deposition density.

[0101] As monomers continue to deposit in the vapor phase, the aggregation of adjacent particle structures 941 can continue until the coating 340 is essentially closed. Figure 3A Ultimately, it can be deposited on the exposed surface 11 of the underlying material. The behavior of such a sealing coating 340, including the resulting optical effects, can generally be relatively uniform, consistent, and unsurprising.

[0102] In some non-limiting examples, at least three basic growth modes for forming thin films can exist, ultimately forming a closed coating 340: 1) island (Volmer-Weber), 2) layer-by-layer (Frank-van der Merwe), and 3) Stranski-Krastanov.

[0103] Island growth typically occurs when old monomer clusters nucleate and grow into discrete islands on the exposed layer surface 11. This growth pattern may occur when the interactions between monomers are stronger than the interactions between monomers and the surface.

[0104] Nucleation rate describes how many nuclei of a given size (where free energy does not drive the growth or contraction of clusters of such nuclei) (“critical nuclei”) are formed per unit time on a surface. During the initial stages of film formation, nuclei are unlikely to grow from direct impacts of monomers onto the surface due to the low deposition density, and thus nuclei can cover a relatively small portion of the surface (e.g., large gaps / spaces exist between adjacent nuclei). Therefore, the rate at which critical nuclei can grow can generally depend on the rate at which adsorbed atoms (e.g., adsorbed monomers) on the surface migrate and attach to nearby nuclei.

[0105] Figure 1 An example is shown of the energy line diagram of adsorbed atoms on the exposed surface 11 of the underlying material. Specifically, Figure 1 Example performance curves corresponding to the following are shown: adsorbed atoms escaping from local low-energy sites (110); diffusion of adsorbed atoms on the surface 11 of the exposed layer (120); and desorption of adsorbed atoms (120).

[0106] In 110, the local low-energy site can be any site on the exposed surface 11 of the underlying layer, where adsorbed atoms will be at a lower energy. Typically, nucleation sites can include defects and / or anomalies on the exposed surface 11, including but not limited to ledges, step edges, chemical impurities, bonding sites, and / or kinks (“heterogeneity”).

[0107] Substrate heterogeneity may increase the energy E involved in the desorption of adsorbed atoms from the surface. des131, thus leading to a higher density of core deposition observed at such sites. Similarly, impurities or contaminants on the surface may also increase E des 131, thus leading to a higher nucleus deposition density. For vapor deposition processes performed under high vacuum conditions, the type and deposition density of contaminants on the surface can be affected by the vacuum pressure and the composition of the residual gas constituting that pressure.

[0108] Once adsorbed atoms are trapped at local low-energy sites, an energy barrier may often exist in some non-limiting instances before surface diffusion occurs. Figure 1 Such energy barriers can be represented as ΔE111. In some non-limiting instances, if the energy barrier ΔE111 for escaping a local low-energy site is sufficiently large, the site can serve as a nucleation site.

[0109] In 120, adsorbed atoms can diffuse on the surface 11 of the exposed layer. As a non-limiting example, in the case of localized absorbents, adsorbed atoms may tend to oscillate near the minimum surface potential energy and migrate to adjacent sites until the adsorbed atoms are desorbed and / or incorporated into the growth islands 941 formed by the adsorbed atom clusters and / or the growth film. Figure 1 In this context, the activation energy associated with surface diffusion of adsorbed atoms can be expressed as E. s 121.

[0110] In 130, the activation energy associated with the desorption of adsorbed atoms from the surface can be expressed as E. des 131. Those skilled in the art will understand that any undesorbed adsorbed atoms may remain on the exposed layer surface 11. As a non-limiting example, such adsorbed atoms may diffuse on the exposed layer surface 11 to become part of the adsorbed atom clusters forming islands 941 on the exposed layer surface 11, and / or be incorporated into the grown film and / or coating.

[0111] After adsorption, the adsorbed atoms may desorb from the surface, or they may migrate a distance on the surface and then desorb, interacting with other adsorbed atoms to form small clusters or attaching to the growing nucleus. The average time that adsorbed atoms remain on the surface after initial adsorption can be given by the following formula:

[0112]

[0113] In the equation above:

[0114] v is the vibrational frequency of the adsorbed atoms on the surface.

[0115] k is the Botzmann constant, and

[0116] T is temperature.

[0117] From this equation, we can note that E des The lower the value of 131, the easier it is for adsorbed atoms to desorb from the surface, and therefore the shorter the time adsorbed atoms can remain on the surface. The average distance that adsorbed atoms can diffuse can be given by the following formula:

[0118]

[0119] in:

[0120] α0 is a lattice constant.

[0121] For E des The low value of 131 and / or E s A high value of 121 indicates that the adsorbed atoms may diffuse a short distance before desorption, making it unlikely that they will attach to the growing nucleus or interact with another adsorbed atom or cluster of adsorbed atoms.

[0122] In the initial stage of forming the deposition layer of granular structure 941, the adsorbed atoms can interact to form granular structure 941, and the critical concentration of granular structure 941 per unit area is given by the following formula.

[0123]

[0124] in:

[0125] E i It is the energy required to dissociate a critical cluster containing i adsorbed atoms into individual adsorbed atoms.

[0126] nx is the total deposition density of adsorption sites, and

[0127] N1 is the monomer deposition density, given by the following formula:

[0128]

[0129] in:

[0130] It is the steam impact rate.

[0131] Typically, i can depend on the crystal structure of the deposited material and can determine the critical particle size for forming a stable nucleus.

[0132] The critical monomer supply rate for growing particulate structures 941 can be given by the vapor impact rate and the average area that adsorbed atoms can diffuse before desorption:

[0133]

[0134] Therefore, the critical nucleation rate can be given by a combination of the above equations:

[0135]

[0136] As can be seen from the equations above, the desorption energy of adsorbed atoms is low, the diffusion activation energy of adsorbed atoms is high, and surfaces at high temperatures and / or subjected to vapor impact rates will suppress the critical nucleation rate.

[0137] Under high vacuum conditions, the molecular flux (per square centimeter per second) impacting a surface can be given by the following formula:

[0138]

[0139] in:

[0140] P is pressure, and

[0141] M is the molecular weight.

[0142] Therefore, during vapor deposition, higher partial pressures of reactive gases such as H2O can lead to higher deposition densities of contaminants on the surface, resulting in increased Ea. des The increase of 131 leads to a higher density of nuclear deposits.

[0143] In this disclosure, “nucleation inhibition” can refer to a coating, material, and / or layer thereof, the surface of which exhibits an initial adhesion probability S0 for depositing deposition material 531 thereon, the initial adhesion probability being close to 0, including but not limited to less than about 0.3, such that deposition of deposition material 531 on such surface can be inhibited.

[0144] In this disclosure, “nucleation promotion” can refer to a coating, material and / or layer thereof, the surface of which exhibits an initial adhesion probability S0 for depositing deposition material 531 thereon, said initial adhesion probability being close to 1, including but not limited to greater than about 0.7, such that deposition of deposition material 531 on such surface can be promoted.

[0145] Without wishing to be bound by a specific theory, it can be assumed that the shape and size of such nuclei, and their subsequent growth into islands and then into thin films, may depend on a variety of factors, including but not limited to vapor, surface and / or interfacial tension between the condensate film nuclei.

[0146] One measure of the nucleation inhibition and / or nucleation promotion properties of a surface can be the initial adhesion probability S0 of the surface to a given deposition material 531.

[0147] In some unrestricted instances, the adhesion probability S can be given by the following equation:

[0148]

[0149] in:

[0150] N 吸附 It is the number of adsorbed atoms retained on the surface 11 of the exposed layer (i.e., incorporated into the membrane), and

[0151] N 总 It is the total number of impacting monomers on the surface.

[0152] An adhesion probability S equal to 1 indicates that all monomers impacting the surface are adsorbed and subsequently incorporated into the grown film. An adhesion probability S equal to 0 indicates that all monomers impacting the surface are desorbed and may not subsequently form a film on the surface.

[0153] The adhesion probability S of the deposited material 531 on various surfaces can be evaluated using various techniques for measuring the adhesion probability S, including but not limited to the dual quartz crystal microbalance (QCM) technique described in the following literature: Walker et al., Journal of Physical Chemistry (J. Phys. Chem. C) 2007, 111, 765 (2006).

[0154] As the deposition density of the deposited material 531 increases (e.g., by increasing the average film thickness d), the adhesion probability S may change.

[0155] Therefore, the initial adhesion probability S0 can be specified as the adhesion probability S of the surface prior to the formation of any considerably large number of critical nuclei. One measure of the initial adhesion probability S0 can involve the adhesion probability S of the surface to the deposition of the deposited material 531 during the initial stage of deposition, where the average film thickness d of the deposited material 531 across the surface is equal to or less than a threshold. In some non-limiting examples, the threshold for the initial adhesion probability S0 can be specified as 1 nm as a non-limiting example. Average adhesion probability Then it can be given by the following formula:

[0156]

[0157] in:

[0158] S nuc It is the adhesion probability S of the region covered by the particle structure 941, and

[0159] A nuc It is the percentage of the substrate surface area covered by the granular structure 941.

[0160] As a non-limiting example, a low initial adhesion probability S0 may increase with increasing average film thickness d. This can be understood based on the difference in adhesion probability S between regions of the exposed layer surface 11 without particulate structure 941 (as a non-limiting example, bare substrate 10) and regions with high deposition density. As a non-limiting example, monomers impacting the surface of particulate structure 941 may have an adhesion probability S close to 1.

[0161] based on Figure 1 The energy lines 110, 120, and 130 shown can be assumed to exhibit relatively low desorption activation energies (E). des 131) and / or a relatively high surface diffusion activation energy (E x The material of 121) can be deposited as NIC 310 and is suitable for a variety of applications.

[0162] Without being bound by a specific theory, it can be assumed that in some unrestricted instances, the relationships between various interfacial tensions present during nucleation and growth can be determined according to Young's equation in capillary theory:

[0163] γ sv =γ fs +γ vf cosθ

[0164] in:

[0165] γ sv Corresponding to the interfacial tension between substrate 10 and vapor,

[0166] y fs Corresponding to the interfacial tension between the deposited material 531 and the substrate 10,

[0167] γ vf Corresponding to the interfacial tension between the vapor and the film, and

[0168] θ is the membrane-nucleus contact angle.

[0169] Figure 2 This demonstrates the relationship between the various parameters represented in this equation.

[0170] Based on Young's equation, it can be concluded that for island growth, the membrane-nucleus contact angle θ can be greater than 0, therefore: γ sv <y fs +γ vf .

[0171] For layer growth, where the deposited material 531 “wets” the substrate 10, the core contact angle θ can be equal to 0, therefore: γ sv =y fs +γvf o

[0172] For Stransky-Krastanov (SK) growth, the strain energy for excessive film growth per unit area is large relative to the interfacial tension between vapor and deposited material 531: γ sv >γ fs +γ vf .

[0173] Without wishing to be bound by any particular theory, it can be assumed that the nucleation and growth mode of the deposited material 531 at the interface between NIC 310 and the exposed layer surface 11 of substrate 10 can follow an island growth model, where θ > 0.

[0174] Especially when the NIC 310 exhibits a relatively low initial adhesion probability S0 to the deposited material 531 (in some non-limiting instances, under the conditions identified in the dual QCM technique described by Walker et al.), the deposited material 531 may have a relatively high film contact angle θ.

[0175] Conversely, as a non-limiting example, when the deposited material 531 is selectively deposited on the exposed layer surface 11 using a shadow mask 415 without the use of a patterned coating 410, the nucleation and growth patterns of such deposited material 531 may differ. Specifically, it has been observed that, at least in some non-limiting examples, coatings formed using a patterning process with a shadow mask 415 can exhibit a relatively low film contact angle θ of less than about 10°.

[0176] It has now been found, somewhat surprisingly, that in some non-limiting instances, the nucleation inhibition coating 310 (and / or the patterning material 511 it comprises) can exhibit relatively low critical surface tension.

[0177] Those skilled in the art will understand that the “surface energy” of a coating, layer, and / or the material constituting such a coating and / or layer can generally correspond to the critical surface tension of said coating, layer, and / or material. According to some models of surface energy, the critical surface tension of a surface can essentially correspond to the surface energy of such a surface.

[0178] Materials with low surface energy typically exhibit low intermolecular forces. Generally, materials with low intermolecular forces may crystallize more readily at lower temperatures or undergo other phase transitions compared to materials with high intermolecular forces. In at least some applications, materials that readily crystallize at relatively low temperatures or undergo other phase transitions may be detrimental to the long-term performance, stability, reliability, and / or lifespan of the device.

[0179] Without being bound by specific theories, it can be assumed that certain low-energy surfaces exhibit relatively low initial adhesion probabilities S0, and therefore may be suitable for forming NIC 310 ( Figure 3A ).

[0180] Without being bound by any particular theory, it can be assumed that, especially for low surface energy surfaces, the critical surface tension may be positively correlated with the surface energy. As a non-limiting example, a surface exhibiting a relatively low critical surface tension may also exhibit a relatively low surface energy, and a surface exhibiting a relatively high critical surface tension may also exhibit a relatively high surface energy.

[0181] Referring to Young's equations above, lower surface energy may lead to a larger contact angle θ, while also reducing γ. sv This increases the likelihood that such surfaces will have low wettability and low initial adhesion probability S0 relative to the deposited material 531.

[0182] In various non-limiting examples, the critical surface tension values ​​described herein may correspond to such values ​​measured near ambient temperature and pressure (NTP), and in some non-limiting examples, said ambient temperature and pressure may correspond to a temperature of 20°C and an absolute pressure of 1 atmosphere. In some non-limiting examples, the critical surface tension of the surface may be determined according to the Zissman method, as further described in the following reference: Zissman, WA, "Advances in Chemistry" 43 (1964), pp. 1-51.

[0183] In some non-limiting instances, the exposed surface 11 of the NIC 310 may exhibit a critical surface tension less than approximately the following values: 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 13 dynes / cm, 12 dynes / cm, or 11 dynes / cm.

[0184] In some non-limiting instances, the exposed surface 11 of the NIC 310 may exhibit a critical surface tension greater than approximately the following values: 6 dynes / cm, 7 dynes / cm, 8 dynes / cm, 9 dynes / cm, and 10 dynes / cm.

[0185] Those skilled in the art will understand that various methods and theories for determining the surface energy of a solid are known. As a non-limiting example, the surface energy can be calculated and / or derived based on a series of measurements of the contact angle θ, wherein various liquids are brought into contact with the surface of the solid to measure the contact angle θ between the liquid-vapor interface and said surface. In some non-limiting examples, the surface energy of the solid surface may be equal to the surface tension of the liquid, which has the highest surface tension that completely wets the surface. As a non-limiting example, the Zisman plot can be used to determine the highest surface tension value that would result in a contact angle θ of 0° with the surface.

[0186] Without being bound by a specific theory, it can be assumed that, in some non-limiting instances, the contact angle θ of the coating of the deposited material 531 can be determined at least in part based on the properties of the NIC 310 to which the deposited material 531 is deposited (including, but not limited to, the initial adhesion probability S0). Therefore, allowing selective deposition of the NIC material 511 exhibiting a relatively high contact angle θ by the deposited material 531 can provide some benefits.

[0187] Those skilled in the art will understand that various methods can be used to measure the contact angle θ, including, but not limited to, static and / or dynamic seated drop and pendant drop methods.

[0188] In some non-limiting examples, the activation energy (E) for desorption des 131 (in some non-limiting instances, at a temperature T of approximately 300 K) can have a specific thermal energy (kJ / kWh) B T) approximately: 2 times, 1.5 times, 1.3 times, 1.2 times, 1.0 times, 0.8 times, or 0.5 times. In some non-limiting examples, the activation energy (E) used for surface diffusivity... s 121 (in some non-limiting instances, at a temperature T of approximately 300 K) can have a specific heat energy (kJ / kWh) B T) Approximately: 1.0 times, 1.5 times, 1.8 times, 2 times, 3 times, 5 times, 7 times or 10 times.

[0189] Without being bound by a specific theory, it can be assumed that during the nucleation and growth of the deposited material 531, at and / or near the interface between the exposed surface 11 of the underlying layer and the NIC 310, a relatively high contact angle θ between the edge of the deposited material 531 and the underlying layer can be observed due to the inhibition of nucleation on the solid surface of the deposited material 531 by the NIC 310. This nucleation inhibition property can be driven by minimizing the surface energy between the underlying layer, the film vapor, and the NIC 310.

[0190] One measure of the nucleation inhibition and / or nucleation promotion properties of a surface can be the initial deposition rate of a given (conductive) deposition material 531 on a surface, relative to the initial deposition rate of the same deposition material 531 on a reference surface, wherein both surfaces are subjected to and / or exposed to the evaporation flux of the deposition material 531.

[0191] Layered device

[0192] Now go to Figure 3A Example layering device 300 is shown. a A cross-sectional view. In some non-limiting instances, such as... Figure 10 As shown in more detail, the device 300 may include multiple layers deposited on the substrate 10.

[0193] The figure shows a horizontal axis labeled X-axis and a vertical axis labeled Z-axis. A second horizontal axis (labeled Y-axis) is shown as substantially transverse to the X-axis and Z-axis. At least one of the horizontal axes may define a lateral aspect of device 300. The vertical axis may define a lateral aspect of device 300.

[0194] Figure 3B It is based on Figure 3A A simplified plan view of the non-limiting example of the device 300. Figure 3B In the plan view, a pair of horizontal axes are shown, labeled as the X-axis and the Y-axis, which in some non-limiting instances may be substantially transverse to each other. At least one of these horizontal axes may define the lateral aspect of the device 300.

[0195] The layers of device 300 can extend laterally, substantially parallel to the plane defined by the transverse axis. Those skilled in the art will understand that, in some non-limiting examples, Figure 3A The representation of a substantially flat surface shown may be an abstraction for illustrative purposes. In some non-limiting instances, there may be locally substantially flat thin layers of varying thicknesses and sizes across the lateral extent of device 300, and in some non-limiting instances, layers that are substantially non-existent and / or layers separated by non-flat transition regions (containing lateral gaps and flat discontinuities).

[0196] Therefore, although for illustrative purposes, the device 300 is shown in its cross-section as a substantially layered structure of substantially parallel planar layers, such a display panel may locally illustrate different morphologies to define features, each of which may substantially exhibit the layered profile discussed in cross-section.

[0197] Deposition of patterned coatings

[0198] Figure 4This is an example schematic diagram illustrating a non-limiting instance of an evaporation process, generally shown as 400, in which a patterned coating 410 (including but not limited to NIC 310 or NPC 520) is selectively deposited in a chamber 40 onto a first portion 301 of an exposed surface 11 of an underlying material (substrate 10 in the figure, for simplicity of illustration only).

[0199] In process 400, a certain amount of patterning material 411 is applied, including but not limited to NIC material 511 and / or NPC material 511. Figure 15A The patterned material 411 is heated under vacuum to evaporate and / or sublimate. In some non-limiting examples, the patterned material 411 comprises entirely and / or substantially the material used to form the patterned coating 410. In some non-limiting examples, such material includes organic materials.

[0200] The evaporated patterned material 412 flows through the chamber 40, in the direction indicated by arrow 41, toward the exposed layer surface 11. When the evaporated patterned material 412 is incident on the exposed layer surface 11, a patterned coating 410 can be formed thereon.

[0201] In some non-limiting examples, as shown in the figure of process 400, the patterned coating 410 can be selectively deposited only onto a portion of the exposed layer surface 11 (in the illustrated example, the first portion 301) by inserting a shadow mask 415 between the patterned material 411 and the exposed layer surface 11. In some non-limiting examples, the shadow mask can be a fine metal mask (FMM). In some non-limiting examples, the shadow mask 415, such as an FMM, can be used to form relatively small features, with feature sizes on the order of tens of micrometers or smaller.

[0202] The shadow mask 415 has at least one aperture 416 extending through it, such that a portion of the evaporated patterned material 412 passes through the aperture 416 and is incident onto the exposed layer surface 11 to form a patterned coating 410. If the evaporated patterned material 412 does not pass through the aperture 416 but is incident onto the surface 417 of the shadow mask 415, it is prevented from settling onto the exposed layer surface 11 to form the patterned coating 410. In some non-limiting embodiments, the shadow mask 415 is configured such that the evaporated patterned material 412 passing through the aperture 416 is incident onto a first portion 301 but not onto a second portion 302. Therefore, the second portion 302 of the exposed layer surface 11 is substantially lacking the patterned coating 410. In some non-limiting embodiments (not shown), the patterned material 411 incident onto the shadow mask 415 may be deposited on its surface 417.

[0203] Therefore, a patterned surface is produced when the patterned coating 410 is deposited.

[0204] In some non-restrictive instances, Figure 4 The patterned coating 410 used in the process can be NIC 310.

[0205] Figure 5A This is an example schematic diagram illustrating a non-limiting instance of the results of an evaporation process, which generally operates at 500... a As shown, in chamber 40, a sealing coating 340 for depositing the deposition layer 330 is deposited onto a second portion 302 of the exposed surface 11 of the underlying material (substrate 10 in the figure, for simplicity of illustration only). This second portion substantially lacks the NIC 310 selectively deposited onto the first portion 301, including but not limited to... Figure 4 The evaporation process is 400.

[0206] In some non-limiting examples, the deposition layer 330 may include a deposition material 531, and in some non-limiting examples, the deposition material may include at least one metal. Those skilled in the art will understand that, generally, organic materials have lower vaporization temperatures than metals, and may be used as deposition materials 531.

[0207] Therefore, in some non-limiting instances, while it may be feasible to selectively deposit patterned coatings 410 (such as NIC 310) using a shadow mask 415 such as an FMM, it may not be feasible to pattern such deposited layers 330 using a shadow mask 415 such as an FMM because, in some non-limiting instances:

[0208] • FMM 415 may deform during deposition processes, especially at high temperatures, such as when it may be used for the deposition of thin conductive films;

[0209] • Limitations on the mechanical (including but not limited to tensile) strength and / or shading effects of FMM 415, especially in high-temperature deposition processes, may impose constraints on the aspect ratio of features achievable using such FMM 415;

[0210] • The types and number of patterns that can be implemented using such an FMM 415 may therefore be constrained. As a non-restrictive instance, each part of the FMM 415 will be physically supported, such that in some non-restrictive instances, some patterns may not be able to be implemented in a single processing stage, including as a non-restrictive instance where the pattern specifies isolated features.

[0211] • Such FMMs may exhibit a warping tendency during high-temperature deposition processes. In some non-limiting instances, this may distort the shape and position of the orifices, which may lead to changes in selective deposition patterns and a decrease in performance and / or yield.

[0212] • The FMM 415, which can be used to generate repeating structures across the surface distribution of device 300, may require the formation of a large number of holes in the FMM 415, which may compromise the structural integrity of the FMM 415;

[0213] • In continuous deposition, especially in metal deposition processes, reuse of FMM 415 may cause deposited material 531 to adhere to the FMM, which may obscure the characteristics of FMM 415 and may lead to changes in selective deposition patterns, performance and / or yield reduction.

[0214] While FMM 415 can be cleaned periodically to remove adhering non-metallic materials, such cleaning procedures may not be suitable for adhering metals, and even so, in some non-limiting instances, they may be time-consuming and / or expensive; and

[0215] Regardless of any such cleaning process, continued use of such FMM 415, especially in high-temperature deposition processes, may render them ineffective in producing the desired patterning, at which point they may be discarded and / or replaced in complex and expensive processes.

[0216] Once the NIC 310 has been deposited on the first portion 301 of the exposed surface 11 of the underlying material (substrate 10 in the figure), a sealing coating 340 of the deposited material 531 can be deposited on the second portion 302 of the exposed surface 11, which is substantially devoid of the NIC 310 as the deposited layer 330.

[0217] In process 500x, a certain amount of deposited material 531 is heated under vacuum to evaporate and / or sublimate 532 the deposited material 531. In some non-limiting examples, the deposited material 531 comprises entirely and / or substantially the material used to form the deposited layer 330. The evaporated deposited material 532 is guided into chamber 40, contained in the direction indicated by arrow 51, toward the exposed surface 11 of the first part 301 and the second part 302. When the evaporated deposited material 532 is incident on the second part 302 of the exposed layer 11, a sealing coating 340 of the deposited material 531 can be formed thereon as the deposited layer 330.

[0218] In some non-limiting instances, the deposition of the deposition material 531 can be performed using an open mask 600. Figure 6A This can be performed using a maskless deposition process and / or a maskless deposition process.

[0219] Those skilled in the art will understand that, unlike the feature size of FMM 415, the feature size of the open mask 600 is typically comparable to the size of the device 300 being manufactured. In some non-limiting examples, such an open mask 600 may have apertures that typically correspond to the size of the device 300; in some non-limiting examples, for microdisplays, the size may correspond to, but is not limited to, about 1″; for mobile displays, the size may correspond to, but is not limited to, about 4-6″; and / or for laptop and / or flat panel displays, the size may correspond to, but is not limited to, about 8-17″, in order to mask the edges of such device 300 during manufacturing. In some non-limiting examples, the feature size of the open mask 600 may be on the order of about 1 cm and / or larger.

[0220] Those skilled in the art will understand that, in some non-limiting instances, the use of the open mask 600 may be omitted if necessary. In some non-limiting instances, the open mask deposition process described herein may be performed alternatively without the use of the open mask 600, thereby exposing the entire exposed layer surface 11.

[0221] Figures 6A-6D A non-restricted instance of an open mask 600 is shown.

[0222] Figure 6A An open mask 600 is shown having and / or having holes 610 formed therein. a Non-limiting instances. In some non-limiting instances, as shown in the figure, the open mask 600... a The aperture 610 is smaller than the size of the device 300, so that when the mask 600... a When covering device 300, mask 600 a The edge of the covering device 300 is shown. In some non-limiting embodiments, as illustrated, the device 300 includes a plurality of emission regions 2210, each emission region corresponding to a corresponding (sub)pixel 1240 / 244x of the device 300. The lateral aspect 910 of such emission regions 2210 may be contained within and thus exposed within an aperture 610, while an unexposed region 620 may be formed between the outer edge 61 of the device 300 and the aperture 610. Those skilled in the art will understand that in some non-limiting embodiments, electrical contacts and / or other components (not shown) of the device 300 may be positioned within such unexposed regions 620 such that these components are substantially unaffected throughout the open mask deposition process.

[0223] Figure 6B An open mask 600 is shown with and / or with holes 611 formed therein. b In a non-limiting example, the hole 611 is smaller than Figure 6A The aperture 610 allows the mask 600 to be positioned such that when the mask 9411 covers the device 300, the mask 600... b The lateral aspect 910a of the emission region 2210 corresponding to at least some (sub)pixels 1240 / 244x is at least covered. As shown, in some non-limiting instances, the lateral aspect 910a of the emission region 2210 corresponding to the outermost (sub)pixels 1240 / 244x is located within an unexposed area 613 of the device 300 formed between the outer edge 61 of the device 300 and the aperture 611, and the deposition material 532, which is masked during the open mask deposition process to suppress evaporation, is incident on the unexposed area 613.

[0224] Figure 6C An open mask 600 is shown having and / or defining holes 612 formed therein. c In a non-limiting example, a pattern is defined that covers the lateral aspect 910a of the emission region 2210 corresponding to at least some (sub)pixels 1240 / 244x while simultaneously exposing the lateral aspect 910b of the emission region 2210 corresponding to at least some (sub)pixels 1240 / 244x. As shown, in some non-limiting examples, the lateral aspect 910a of the emission region 2210 corresponding to at least some (sub)pixels 1240 / 244x, located in the unexposed area 614 of the device 300, is masked during an open mask deposition process to suppress the evaporation of deposition material 531330 incident on the unexposed area 614.

[0225] Despite Figures 6B-6C In the process, the lateral aspect 910a of the emission region 2210 corresponding to at least some of the outermost (sub)pixels 1240 / 244x has been masked. As shown, those skilled in the art will understand that in some non-limiting instances, the holes of the open mask 600 may be shaped to mask the lateral aspects 910 of other emission regions 2210 and / or the lateral aspects x20 of non-emission regions 2220 of the masking device 300.

[0226] Furthermore, despite Figures 6A-6C An open mask 600 with a single hole 610-612 is shown. Those skilled in the art will understand that in some non-limiting instances (not shown), such an open mask 600 may have additional holes (not shown) in multiple areas of the exposed layer surface 11 for exposing the underlying material of the device 300.

[0227] Figure 6D An open mask 600 with and / or defining multiple holes 617a-617d is shown. dNon-limiting examples. In some non-limiting examples, holes 617a-617d are positioned such that they selectively expose certain regions 621 of the device 300 while masking other regions 622. In some non-limiting examples, the lateral aspects 910b of certain emission regions 2210 corresponding to at least some sub-pixels 1240 / 244x are exposed through holes 617a-617d in region 621, while the lateral aspects 910a of other emission regions 2210 corresponding to at least some sub-pixels 1240 / 244x are located within region 622 and are therefore masked.

[0228] In fact, such as Figure 5A As shown, the evaporated deposited material 532 is incident on the exposed layer surface 11 of the NIC 310 across the first part 301 and on the exposed layer surface 11 of the substrate 10 across the second part 302, which is substantially devoid of any NIC 310.

[0229] Because the exposed surface 11 of the NIC 310 in the first part 301 exhibits a relatively low initial adhesion probability S0 for the deposition of the deposition layer 330 compared to the exposed surface 11 of the substrate 10 in the second part 302, the deposition layer 330 is deposited essentially only selectively on the exposed surface 11 of the substrate 10 in the second part 302, which is essentially devoid of the NIC 310. In contrast, the evaporated deposition material 532 incident on the exposed surface 11 of the NIC 310 across the first part 301 tends not to deposit, as shown in Figure (533), and the exposed surface 11 of the NIC 310 across the first part 301 is essentially devoid of the sealing coating 340 of the deposition layer 330.

[0230] In some non-limiting examples, the initial deposition rate of the evaporated deposited material 531 on the exposed layer surface 11 of the substrate 10 in the second part 302 may exceed that of the initial deposition rate of the evaporated deposited material 531 on the exposed layer surface 11 of the NIC 310 in the first part 301 by approximately: 200 times, 550 times, 900 times, 1,000 times, 1,500 times, 1,900 times, or 2,000 times.

[0231] therefore, Figure 4 The use of a shadow mask 415 (such as an FMM) and an open mask 600 to selectively deposit NIC 310 as a patterned coating 410, and / or a maskless deposition of deposited material 531, can result in version 300 of device 300. a ,like Figure 3A As shown.

[0232] Device 300 aA lateral aspect 1310 of the exposed surface 11 of the underlying material is shown. The lateral aspect 1310 includes a first portion 301 and a second portion 302. In the first portion 301, a NIC 310 is disposed on the exposed surface 11. However, in the second portion 302, the surface of the exposed layer 11 is substantially devoid of the NIC 310. In some non-limiting embodiments, the second portion 302 includes the portion of the exposed surface 11 located outside the first portion 301.

[0233] Following the selective deposition of NIC 310 across the first part 301, in some non-limiting instances, a closed coating 340 of the deposition material 531 is deposited on the apparatus 300 using an open mask 600 and / or a maskless deposition process. a Above it is the deposition layer 330, but it is still basically only within the second part 302, which is basically lacking NIC 310.

[0234] NIC 310 provides, within the first part 301, an exposed layer surface 11 for the deposition of the deposited material 531 with a relatively low initial adhesion probability S0, and said initial adhesion probability is substantially less than that of the device 300 within the second part 302. a The initial adhesion probability S0 of the exposed surface 11 of the underlying material for the deposition of the deposited material 531.

[0235] Therefore, the first part 301 is essentially lacking in the sealing coating 340 of the deposited material 531.

[0236] In this manner, NIC 310 can be selectively deposited, including the use of a shadow mask 415 to allow the deposition of a deposition layer 330, including but not limited to the use of an open mask 600, and / or a maskless deposition process, to form device features including but not limited to electrodes 1020, 1040, 2150, busbar 5050 and / or at least one layer thereof, and / or conductive elements electrically coupled thereto.

[0237] Therefore, a shadow mask 415 (such as an FMM) and an open mask 600 are used to selectively deposit NIC 310 as... Figure 4 The patterned coating 410 and / or the maskless deposition of the deposited material 531 can be combined to achieve selective deposition of at least one deposited layer 330 to form device features, including but not limited to patterned electrodes 1020, 1040, 2150, busbars 5050 and / or at least one layer thereof, and / or conductive elements electrically coupled thereto. Figure 3A The device 300 shown a In this process, FMM 415 is not required within the deposition process of deposition layer 330. In some non-limiting instances, such patterning may allow and / or enhance device 300.a Transmittance.

[0238] In some non-restrictive instances, Figure 4 The patterned coating 410 used in the process can be NPC 520 ( Figure 5B ).

[0239] Figure 5B This is an example schematic diagram illustrating a non-limiting instance of the results of an evaporation process, which generally operates at 500... b As shown, in chamber 50, a sealing coating 340 for depositing the deposition layer 330 is deposited onto the exposed surface 11 of the underlying material (in the figure, for simplicity of illustration only, it is selectively deposited onto the NPC 520 on the first part 301), including but not limited to... Figure 4 The evaporation process is 400.

[0240] Once the NPC 520 has been deposited on the first portion 301 of the exposed surface 11 of the underlying material (substrate 10 in the figure), a sealing coating 340 of the deposited material 531 can be deposited on the first portion 301 of the exposed surface 11, which is substantially covered by the NPC 520 as the deposited layer 330.

[0241] In process 500 b In this process, a certain amount of deposited material 531 is heated under vacuum to evaporate and / or sublimate 532 of the deposited material 531. In some non-limiting examples, the deposited material 531 comprises entirely and / or substantially the material used to form the deposited layer 330. The evaporated deposited material 532 is guided into the chamber 40, contained in the direction indicated by arrow 51, toward the exposed surface 11 of the first part 301 and the second part 302. When the evaporated deposited material 531 532 is incident on the first part 301 of the exposed layer 11, a sealing coating 340 of the deposited material 531 can be formed thereon as the deposited layer 330.

[0242] In some non-limiting instances, the deposition of the deposition material 531 can be performed using an open mask 600 and / or a maskless deposition process.

[0243] In fact, such as Figure 5B As shown, the evaporated deposited material 532 is incident on the exposed layer surface 11 of the NPC 520 across the first part 301 and on the exposed layer surface 11 of the substrate 10 across the second part 302 which is substantially lacking the NPC 520.

[0244] Because the exposed surface 11 of the NPC 520 in the first part 301 exhibits a relatively high initial adhesion probability S0 for the deposition of the deposited material 531 compared to the exposed surface 11 of the substrate 10 in the second part 302, the deposited layer 330 is essentially deposited only selectively on the exposed surface 11 of the NPC 520 in the first part 301. In contrast, the evaporated deposited material 532 incident on the exposed surface 11 of the substrate 10 across the second part 302 tends not to deposit, as shown in Figure (533), and the exposed surface 11 of the substrate 10 across the second part 302 is essentially lacking a sealing coating 340 of the deposited material 531.

[0245] therefore, Figure 4 The use of a shadow mask 415 (such as an FMM) and an open mask 600 to selectively deposit NPC 520 as a patterned coating 410, and / or a maskless deposition of deposited material 531, can result in version 700 of device 300, such as Figure 7 As shown.

[0246] The apparatus 300 shows a lateral aspect 1310 of the exposed surface 11 of the underlying material. The lateral aspect 1310 includes a first portion 301 and a second portion 302. In the first portion 301, the NPC 520 is disposed on the exposed surface 11. However, in the second portion 302, the surface of the exposed layer 11 is substantially lacking the NPC 520. In some non-limiting embodiments, the second portion 302 includes the portion of the exposed surface 11 located outside the first portion 301.

[0247] Following the selective deposition of NPC 520 across the first part 301, in some non-limiting instances, a closed coating 340 of the deposition material 531 is deposited on the apparatus 300 using an open mask 600 and / or a maskless deposition process. b Above this is the deposition layer 330, but it is still essentially only within the first part 301, which contains the deposited NPC 520.

[0248] NPC 520 provides, within the first part 301, an exposed layer surface 11 for depositing material 531 with a relatively high initial adhesion probability S0, and said initial adhesion probability is substantially greater than that of device 300 within the second part 302. b The initial adhesion probability S0 of the exposed surface 11 of the underlying material to the deposition of the deposited material 531.

[0249] Therefore, the second part 302 is essentially lacking the sealing coating 340 of the deposited material 531.

[0250] In this manner, NPC 520 can selectively deposit, including using a shadow mask 415 to allow the deposition layer 330 to be deposited, including but not limited to using an open mask 600, and / or a maskless deposition process, to form device features, including but not limited to electrodes, busbars 5050 and / or at least one layer thereof, and / or conductive elements electrically coupled thereto.

[0251] therefore, Figure 4 Selective deposition of NPC 520 as a patterned coating 410 using a shadow mask 415 (such as an FMM) and an open mask 600, and / or maskless deposition of deposition material 531 can be combined to achieve selective deposition of at least one deposition layer 330 to form device features including, but not limited to, patterned electrodes 1020, 1040, 2150, 5050 and / or conductive elements electrically coupled thereto. Figure 7 In the illustrated device 700, FMM 415 is not required within the deposition process of deposition layer 330. In some non-limiting examples, such patterning may allow and / or enhance the transmittance of device 700.

[0252] In some non-limiting examples, a patterned coating 410 (which may be NIC 310 and / or NPC 520) may be applied multiple times during the manufacturing process of device 300 to pattern device features including a plurality of electrodes 1020, 1040, 2150, busbar 5050 and / or at least one layer and / or each layer thereof and / or a deposited layer 330 electrically coupled thereto.

[0253] In some non-limiting examples, the thickness of the patterned coating 410, such as NIC 310 and / or NPC 520, and the subsequently deposited deposition layer 330, can vary according to various parameters, including but not limited to desired applications and desired performance characteristics. In some non-limiting examples, the thickness of NIC 310 can be comparable to and / or significantly less than the thickness of the subsequently deposited deposition layer 330. Using a relatively thin NIC 310 to achieve selective patterning of the deposition layer 330 may be suitable for providing a flexible device 300, including but not limited to a PMOLED device. In some non-limiting examples, the relatively thin NIC 310 can provide a relatively flat surface on which a barrier coating 2050 can be deposited. Figure 20C (or other thin-film encapsulation (TFE) layers. In some non-limiting examples, providing such a relatively flat surface for applying the barrier coating 2050 can increase the adhesion of the barrier coating 2050 to such surfaces.

[0254] NIC

[0255] NIC 310 may include NIC material 511. In some non-limiting examples, NIC 310 may include a sealing coating 340 of NIC material 511.

[0256] NIC 310 can provide an initial adhesion probability S0 of the exposed layer surface 11 for the deposition of the deposited material 531. In some non-limiting instances, the initial adhesion probability is substantially less than the initial adhesion probability S0 of the exposed layer surface 11 (for the deposition of the deposited material 531) of the underlying layer of device 300 on which NIC 310 has been deposited.

[0257] Because of the low initial adhesion probability S0 of NIC 310 and / or NIC material 511, in some non-limiting instances, when deposited in the form of a film and / or coating, and in cases similar to the deposition of NIC 310 within device 300, for the deposition of deposited material 531, NIC 310 may substantially lack a sealing coating 340 of deposited material 531.

[0258] In some non-limiting examples, NIC 310 and / or NIC material 511, when deposited in the form of a film and / or coating, and in the case of NIC 310 deposition within a device similar to 300, may have an initial adhesion probability S0 for the deposition of the deposited material 531 (in some non-limiting examples, under the conditions identified in the dual QCM technique described by Walker et al.), said initial adhesion probability being less than about: 0.9, 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, or 0.0001.

[0259] In some non-limiting examples, NIC 310 and / or NIC material 511, when deposited in the form of a film and / or coating, and in the case of NIC 310 deposition within a device similar to 300, may have an initial adhesion probability S0 for the deposition of silver (Ag) and / or magnesium (Mg) (in some non-limiting examples, under the conditions identified in the dual QCM technique described by Walker et al.), said initial adhesion probability being less than about: 0.9, 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, or 0.0001.

[0260] In some non-limiting examples, NIC 310 and / or NIC material 511, and in some non-limiting examples, when deposited in the form of a film and / or coating, and within a device similar to 300, NIC In the case of deposition 310, there may be an initial adhesion probability S0 for the deposition of the deposited material 531 (under the conditions identified in some non-limiting examples, in the dual QCM technique described by Walker et al.), said initial adhesion probability being between approximately: 0.15-0.0001, 0.1-0.0003, 0.08-0.0005, 0.08-0.0008, 0.05-0.001, 0.03-0.0001, 0.03-0.0003, 0.03-0.0005, 0.03-0.0008, 0.03-0.001, 0.03-0.005, 0.03-0.008, 0.03-0.01, 0.02-0.0001, 0.02-0.0003, 0.02-0.0005, 0.0 2-0.0008, 0.02-0.001, 0.02-0.005, 0.02-0.008, 0.02-0.01, 0.01-0.0001, 0.01-0.0003, 0.01-0.0005, 0.01-0.0008, 0.01-0.001, 0.01-0.005, 0.01-0.008, 0.00 Between 0.008-0.0001, 0.008-0.0003, 0.008-0.0005, 0.008-0.0008, 0.008-0.001, 0.008-0.005, 0.005-0.0001, 0.005-0.0003, 0.005-0.0005, 0.005-0.0008, or 0.005-0.001.

[0261] In some non-limiting examples, NIC 310 and / or NIC material 511, when deposited in the form of a film and / or coating, and in the case of NIC 310 deposition within a device similar to 300, may have an initial adhesion probability S0 for the deposition of multiple deposited materials 531 (in some non-limiting examples, under the conditions identified in the dual QCM technique described by Walker et al.), said initial adhesion probability being less than a threshold. In some non-limiting examples, said threshold may be about: 0.3, 0.2, 0.18, 0.15, 0.13, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, or 0.001.

[0262] In some non-limiting examples, NIC 310 and / or NIC material 511, when deposited in the form of a film and / or coating, and in the case of NIC 310 deposition within a device similar to 300, may have an initial adhesion probability S0 for the deposition of two or more deposited materials 531 (in some non-limiting examples, under the conditions identified in the dual QCM technique described by Walker et al.), said initial adhesion probability being less than a threshold, said two or more deposited materials being selected from: Ag, Mg, Yb, Cd, and Zn. In some further non-limiting examples, NIC 310 exhibits an S0 equal to or less than a threshold for the deposition of two or more deposited materials 531, said two or more deposited materials being selected from: Ag, Mg, and Yb.

[0263] In some non-limiting examples, NIC 310 and / or NIC material 511, when deposited in the form of a film and / or coating, and in the case of NIC 310 deposition similar to that within device 300, may exhibit an initial adhesion probability S0 for the deposition of the first deposition material 531 (which is equal to or less than a first threshold) and an initial adhesion probability S0 for the deposition of the second deposition material 531 (which is equal to or less than a second threshold). In some non-limiting examples, the first deposition material 531 may be Ag, and the second deposition material 531 may be Mg. In some other non-limiting examples, the first deposition material 531 may be Ag, and the second deposition material 531 may be Yb. In some other non-limiting examples, the first deposition material 531 may be Yb, and the second deposition material 531 may be Mg. In some non-limiting examples, the first threshold may be greater than the second threshold.

[0264] In some non-limiting examples, NIC 310 and / or NIC material 511, when deposited in the form of a film and / or coating, and in the case of NIC 310 deposition similar to that in device 300, may have an extinction coefficient k of less than about 0.01 for photons whose wavelengths exceed at least one of about: 600 nm, 500 nm, 460 nm, 420 nm, or 410 nm.

[0265] In some non-limiting examples, NIC 310 includes a compound containing a rare earth element selected from: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), promethium (Pm), praseodymium (Pr), scandium (Sc), samarium (Sm), terbium (Tb), thulium (Tm), yttrium (Y), and ytterbium (Yb). In some non-limiting examples, the rare earth element is selected from: Ce, Dy, Er, Eu, Gd, Ho, Lu, Nd, Pr, Sm, Tb, Tm, and Yb. In some non-limiting examples, the rare earth element is selected from: Ce, Dy, Er, Eu, Gd, Ho, Lu, Nd, Sm, Tm, and Yb.

[0266] In some non-limiting examples, the compound is an oxide of a rare earth element, including but not limited to: CeO2, Dy2O3, Er2O3, Eu2O3, Gd2O3, Ho2O3, La2O3, Lu2O3, Nd2O3, Pr6O 11 , Pr2O3, PrO2, Pr2O5, Pm2O3, Sm2O3, Sc2O3, Tb7O 12 Tb2O3, TbO2, Tb3O7, Tm2O3, Yb2O3 and Y2O3.

[0267] Generally, metals and metal compounds (including, as non-limiting examples, pure metals and metal oxides) are known to exhibit relatively high critical surface tensions. However, somewhat surprisingly, it has been found that oxides of at least some rare earth elements (“rare earth oxides”) exhibit relatively low critical surface tensions.

[0268] Without being bound by any particular theory, it can be assumed that the low-energy surfaces formed from such rare-earth oxides can exhibit a relatively low initial adhesion probability, and therefore may be particularly suitable for forming NIC 310 or its components.

[0269] Without being bound by any particular theory, it can be assumed that, especially for low surface energy surfaces, the critical surface tension may be positively correlated with the surface energy. As a non-limiting example, a surface exhibiting a relatively low critical surface tension may also exhibit a relatively low surface energy, and a surface exhibiting a relatively high critical surface tension may also exhibit a relatively high surface energy.

[0270] According to some models of surface energy, the critical surface tension of a surface can be equal to or substantially equal to its surface energy. Referring to Young's equations above, lower surface energy may lead to a larger contact angle θ, while also reducing γ. SVThis increases the likelihood that such surfaces will have low wettability and low initial adhesion probability S0 for the deposition of deposition material 531 used to form deposition layer 330.

[0271] In some non-limiting examples, the exposed surface 11 of the NIC 310 may be at least partially formed of rare earth oxides and may exhibit a critical surface energy Y1 less than about the following values: 40 dynes / cm, 35 dynes / cm, 30 dynes / cm, 28 dynes / cm, 25 dynes / cm, 23 dynes / cm, 20 dynes / cm, 18 dynes / cm, or 15 dynes / cm. In some non-limiting examples, the critical surface energy Y1 of the surface of the NIC 310 may be between about: 10-40 dynes / cm, 10-35 dynes / cm, 10-30 dynes / cm, 10-28 dynes / cm, 10-25 dynes / cm, 10-23 dynes / cm, 10-20 dynes / cm, 10-19 dynes / cm, 10-18 dynes / cm, or 10-15 dynes / cm. In some non-limiting instances, the critical surface energy Y1 of the NIC 310 surface can be determined according to the Zissman method, as further described in the following literature: WAZisman, Progress in Chemistry 43 (1964), pp. 1-51.

[0272] Now go to Figure 8A Example version 800 of device 300 is shown. a .

[0273] Device 800 a The lateral aspect of the exposed surface 11 of the underlying material is shown. The lateral aspect includes a first portion 301 and a second portion 302. In the first portion 301, a NIC 310 is disposed on the exposed surface 11. In the second portion 302, an interface coating 820 is disposed on the exposed surface 11. The second portion 302 is substantially lacking in the NIC 310.

[0274] Following the deposition of NIC 310 across the first section 301 and the deposition of interface coating 820 across the second section 302, in some non-limiting instances, the deposition material 531 is deposited on the apparatus 800 using an open mask 600 and / or a maskless deposition process. a Above, but it is still basically only within the second part 302, which is basically lacking in NIC 310.

[0275] NIC 310 provides an exposed layer surface 11 within the first part 301 with a relatively low initial adhesion probability S0 for the deposition of the deposited material 531, and said initial adhesion probability is substantially less than the initial adhesion probability S0 of the exposed layer surface 9410 of the interface coating 820 within the second part 302 for the deposition of the deposited material 531. In some non-limiting embodiments, the interface coating 820 may be NPC 520.

[0276] Therefore, the first part 301 is basically lacking in the sealing coating 340 of the deposited material 531.

[0277] In this manner, NIC 310 can be selectively deposited, including the use of a shadow mask 415 to allow the deposition of a deposition layer 330, including but not limited to the use of an open mask 600, and / or a maskless deposition process, to form device features including but not limited to electrodes 1020, 1040, 2150, busbar 5050 and / or at least one layer thereof, and / or at least one layer thereof, and / or conductive elements electrically coupled thereto.

[0278] In some non-limiting examples, the interface coating 820 may include rare earth elements. In some non-limiting examples, the interface coating 820 and NIC 310 include the same rare earth elements. In some other non-limiting examples, the rare earth elements in the interface coating 820 are different from those in the NIC 310.

[0279] In some non-limiting instances, device 800 a It is an optoelectronic device having at least one emission region 2210 in the second part 302. In some non-limiting examples, the interface coating 820 may serve as an electron injection layer (EIL) 139, and the deposition layer 330 may form the device 800. a The cathode 1242 or a portion thereof. In some non-limiting examples, the interface coating 820, together with the deposited layer 330, can form the device 800. a The cathode 1242 or a portion thereof.

[0280] In some non-limiting instances, the interface coating 820 and NIC 310 can span device 800. a The lateral aspects are continuously formed. As a non-limiting example, the interface coating of interface 820 may be adjacent to the edge of NIC 310.

[0281] In some non-limiting instances, the interface coatings 820 and NIC 310 can be formed substantially continuously across the lateral aspect.

[0282] In some non-limiting instances, in manufacturing apparatus 800 aDuring and prior to the deposition of the deposition layer 330, rare earth elements are deposited on the first portion 301 and the second portion 302 in the lateral direction. In some non-limiting examples, the rare earth elements deposited on the first portion 301 may be oxidized during deposition and / or further processing to form rare earth oxides that can constitute NIC 310. Conversely, in some non-limiting examples, the rare earth elements deposited on the second portion 302 may form an interface coating 820. In some non-limiting examples, the interface coating 820 may contain rare earth elements with an oxidation state of 0.

[0283] Turn now Figure 8B Example version 800 of device 300 is shown. b .

[0284] Device 800 b The lateral aspect of the exposed layer surface 11 of the underlying material is shown. An interface coating 820 is disposed over the exposed layer surface 11 across a first portion 301 and a second portion 302. In the first portion 301, a NIC 310 is disposed over the exposed interface coating 820. In some non-limiting embodiments, the NIC 310 may be formed by oxidizing the exposed layer surface 11 of the interface coating 820. After the formation of the NIC 310, a deposition layer 330 is deposited over the interface coating 820 in the second portion 302. As a non-limiting embodiment, the first portion 301 continues to have a portion of the interface coating 820 disposed between the NIC 310 and the exposed layer surface 11 of the underlying surface, and the second portion 302 has another portion of the interface coating 820 disposed between the deposition layer 330 and the exposed layer surface 11 of the underlying surface. The interface coating 820 comprises rare earth elements, and the NIC 310 comprises oxides of such rare earth elements. In some non-limiting examples, the interface coatings 820 in the first part 301 and the second part 302 are formed continuously to each other, or as a single monolithic structure. In some non-limiting examples, the thickness of the interface coating 820 in the first part 301 may be less than the thickness of the interface coating 820 in the second part 302.

[0285] Turn now Figure 8C Example version 800 of device 300 is shown. c .

[0286] Device 800 c A first portion 811 of the lateral aspect of the exposed layer surface 11 of the underlying material provided in the second part 302 and a second portion 812 of the lateral aspect of the exposed layer surface 11 provided in the first part 301 are shown. In some non-limiting embodiments, as shown, the second portion 812 may correspond to the surface of the modified layer 815 provided in the first part 301. In some non-limiting embodiments, in the manufacturing apparatus 800 cDuring this process, rare earth elements may be deposited on the first part 301 and the second part 302. If such rare earth elements are deposited on or above the modified layer 815, the modified layer 815 may cause, promote and / or catalyze the oxidation of the rare earth elements disposed thereon in the first part 301, thereby forming NIC 310.

[0287] In some non-limiting instances, the surface energy or critical surface tension Y1 of the exposed layer surface 11 of the bottom surface 11 in the second portion 812 is lower than that of the first portion 811. As a non-limiting instance, the exposed layer surface 11 of the second portion 812 may exhibit a lower initial adhesion probability S0 for rare earth element deposition compared to the exposed layer surface 11 in the first portion 811. In such a scenario, as discussed herein, in the context of the particulate structure 941, in some non-limiting instances, the thickness of the NIC 310 formed in the first portion 811 by deposition and subsequent oxidation of rare earth elements may be less than the thickness of the interface coating 820 formed in the second portion 812 by deposition of rare earth elements. As a non-limiting instance, the NIC 310 may comprise rare earth oxides formed as particulate structure 941 in the second portion 812. Without wishing to be bound by any particular theory, it can be assumed that the relatively high critical surface energy Y1 of the exposed layer surface 11 of the bottom surface in the second portion 812 can lead to a higher adhesion probability S0 for rare earth element deposition in the manufacturing apparatus 800. c During this process, rare earth elements are deposited as particulate structures 941 on the surface of the exposed layer. This form of rare earth elements can promote their oxidation to form NIC310.

[0288] In some non-limiting examples, the rare earth element is Yb. In some non-limiting examples, the interface coating 820 comprises Yb and NIC 310 comprises ytterbium oxide, which can be represented, for example, by the formula Yb₂O₃. In such examples, NIC 310 comprises Yb having a 3+ oxidation state. For illustrative purposes only, such substances may be represented herein as Yb. 3+ Similarly, Yb substances with 0 and 2+ oxidation states can be represented as Yb, respectively. 0 and Yb 2+ In some non-limiting instances, the interface coating 820 includes Yb 0 .

[0289] In some non-restrictive instances, Yb in Part 1, Section 301 3+ The concentration of the substance can exceed that of Yb in Part 2, 302. 3+ The concentration of the substance. As a non-limiting example, device 800 c In some unrestricted instances, the following relation can be satisfied:

[0290]

[0291] in and These correspond to Yb existing in Part 1, 301 respectively. 0 Yb 2+ and Yb 3+ The quantity of matter, and and These correspond to Yb present in Part 2, 302. 0 Yb 2+ and Yb 3+ The quantity of matter.

[0292] In some non-restrictive instances, Yb in Part II 302 0 The concentration of the substance can exceed that of Yb in Part 1, 301. 0 The concentration of the substance. As a non-limiting example, device 800 c In some unrestricted instances, the following relation can be satisfied:

[0293]

[0294] It has now been found that surfaces comprising rare earth elements with an oxidation state of 0 can exhibit a much higher critical surface energy Y1 compared to surfaces comprising rare earth oxides (where rare earth elements have non-zero oxidation states). As mentioned above, materials forming relatively low-energy surfaces have been found to be particularly suitable for use as NIC 310, and materials forming relatively high-energy surfaces have been found to be suitable for use as interface coating 820, which can serve as and / or as NPC 520.

[0295] In some non-limiting examples, the concentration of rare earth oxides in the first region 301 may exceed the concentration of rare earth oxides in the second region 302. In some non-limiting examples, the concentration of rare earth elements with an oxidation state of zero in the second region 302 may exceed the concentration of rare earth elements with an oxidation state of zero in the first region 301. In some non-limiting examples, most rare earth elements in the first region 301 may have a non-zero oxidation state, and most rare earth elements in the second region 302 may have a zero oxidation state.

[0296] As a non-limiting example, various techniques can be used to detect the presence and oxidation state of rare earth elements in thin films, including but not limited to X-ray photoelectron spectroscopy (XPS). For example, using XPS, the core-level binding energy and associated intensity can be determined. The measured binding energy is then compared with reference binding energies for known elements in various forms and oxidation states to determine the substances present in the sample. The table below summarizes non-limiting examples of reference core-level binding energies for various rare earth elements in metallic and oxide forms.

[0297]

[0298] Although binding energies are provided in the form of ranges in the table above, those skilled in the art will understand that specific reference binding energy values ​​falling within or outside these ranges can be found in a variety of sources. Non-limiting examples of such sources include, but are not limited to: BV Crist. (1999). Handbook of The Elements and Native Oxides. XPS International, Inc.; A.V Naumkin et al., NIST X-ray Photoelectron Spectroscopy Database, NIST Standard Reference Database 20, Version 4.1, NIST; and J.M. Foulder et al. (1992). Handbook of X-ray Photoelectron Spectroscopy. Perkin-Elmer Corporation.

[0299] In some non-limiting examples, the critical surface energy Y1 of NIC 310 may be less than about 1 / 3 of the critical surface energy Y1 of the exposed surface 11 on which the deposition layer 330 is disposed (which may be, for example, the exposed surface 11 of the interface coating 820). In some non-limiting examples, the critical surface energy Y1 of NIC 310 may be less than about: 1 / 3, 1 / 4, 1 / 5, 1 / 6, 1 / 8, 1 / 10, 1 / 15, 1 / 20, 1 / 30 or 1 / 50 of the critical surface energy Y1 of the exposed surface 11 on which the deposition layer 330 is disposed (which may be, for example, the exposed surface 11 of the interface coating 820).

[0300] In some non-limiting examples, the contact angle θ of water on the exposed surface 11 of the NIC 310 can be at least about: 90°, 100°, 110°, 120°, 130°, 140°, or 150°. In some non-limiting examples, the contact angle θ of water on the exposed surface 11 of the NIC 310 can be about: 90-130° or 95-120°. This contact angle θ can be measured using various methods, including, but not limited to, static or dynamic seated drop and pendant drop methods.

[0301] Various methods and theories for determining the surface energy Y1 of a solid are known. For example, the surface energy Y1 can be calculated and / or derived based on a series of measurements of the contact angle θ, where various liquids are brought into contact with the surface of the solid to measure the contact angle θ between the liquid-vapor interface and the surface. In some non-limiting instances, the surface energy Y1 of the solid surface is equal to the surface tension of the liquid, which has the highest surface tension that completely wets the surface. As a non-limiting example, Zissmann plots can be used to determine the highest surface tension value that will result in complete wetting of the surface (i.e., a contact angle θ of 0°). According to some surface energy theories, various types of interactions between the solid surface and the liquid can be considered when determining the surface energy Y1 of a solid. For example, according to some theories, including but not limited to Owens / Wendt theory and / or Fowkes' theory, the surface energy Y1 can include a dispersive component and a non-dispersive or "polar" component.

[0302] In some non-limiting instances, the polar component of the surface energy Y1 of NIC 310 can be less than approximately 5 mJ / m 2 3mJ / m 2 1mJ / m 2 Or it is essentially zero.

[0303] Although various examples of NIC 310 containing certain rare earth oxides have been described, it is understood that NIC 310 may include other rare earth compounds to replace or combine with such rare earth oxides.

[0304] The following examples will now be used to illustrate and describe aspects of some non-limiting instances, which are not intended to limit the scope of this disclosure in any way.

[0305] Example

[0306] A series of samples were fabricated by vacuum deposition of a 20 nm thick organic material layer, followed by deposition of Yb layers of varying thicknesses. Specifically, Yb layers with a thickness of [missing information] were fabricated. Samples of 1 nm and 2 nm were then taken out and exposed to air for approximately 10 minutes to allow the surface of the Yb layer to oxidize and form NIC 310. The oxidized Yb surface of each sample was then subjected to open-mask deposition with a 600 Mg layer. Each sample was subjected to an average evaporation rate of approximately... The Mg vapor flux. During the deposition of the Mg coating, a deposition time of approximately 167 seconds was used to obtain a reference Mg layer thickness of approximately 15 nm.

[0307] Once the samples were prepared, optical transmittance measurements were performed to determine the relative amount of Mg deposited on the NIC 310 surface. It should be understood that, as a non-limiting example, a relatively thin Mg coating with a thickness of less than a few nm is essentially transparent. However, transmittance decreases as the thickness of the Mg coating increases. Therefore, the relative properties of various NIC 310 materials can be evaluated by measuring the transmittance through the sample, which is directly related to the amount and / or thickness of the Mg coating deposited thereon from the Mg deposition process. Taking into account any light loss and / or absorption caused by the presence of the glass substrate, all samples prepared according to the above method were found to exhibit relatively high transmittance in the visible spectrum, greater than about 90%. This high optical transmittance can be directly attributed to the presence of a relatively small amount of Mg coating (if any) on the exposed surface 11 of the NIC 310, which absorbs light transmitted through the sample. Therefore, such NIC 310 materials generally exhibit a relatively low affinity for Mg and / or an initial adhesion probability S0, and may thus be particularly useful for achieving selective deposition and patterning of Mg-containing coatings in certain applications.

[0308] In some non-limiting examples, NIC 310 may be doped, covered, and / or supplemented with another material that can act as a seed or heterogeneity to serve as nucleation sites for the deposited material 531. In some non-limiting examples, such other materials may include NPC materials. In some non-limiting examples, such other materials may include organic materials, such as, as a non-limiting example, polycyclic aromatic compounds and / or materials containing non-metallic elements such as, but not limited to, oxygen (O), sulfur (S), nitrogen (N), or carbon (C), the presence of which may otherwise be considered as source materials, contaminants in the equipment used for deposition, and / or in the vacuum chamber environment. In some non-limiting examples, such other materials may be deposited in a small portion of a single-layer thickness to avoid forming a continuous coating 340. Instead, the monomers of such other materials will tend to separate laterally to form discrete nucleation sites for the deposited material.

[0309] Go to Figure 9A , showed Figure 3A Version 900 of the device 300 shows the interface between the NIC 310 in the first part 301 and the deposition layer 330 in the second part 302 in an exaggerated form. Figure 9B The device 900 is shown in plan view.

[0310] from Figure 9BAs can be better seen, in some non-limiting instances, the NIC 310 in the first part 301 may be surrounded on all sides by the deposition layer 330 in the second part 302, such that the first part 301 may have a boundary defined by a further extent or edge 915 of the NIC 310 in the lateral aspect along each lateral axis. In some non-limiting instances, the edge 915 of the NIC in the lateral aspect may be defined by the perimeter of the first part 301 in this aspect.

[0311] In some non-limiting instances, the first part 301 may include at least one NIC transition region 301. t In the lateral direction, the thickness of NIC 310 can transition from a maximum thickness to a decreasing thickness. The portion of the first part 301 that does not exhibit this transition is designated as the non-transition portion 301 of the first part 301. n In some non-limiting instances, NIC 310 may be in the NIC non-transition section 301 of the first part 301. n A basically closed coating 340 is formed in the middle.

[0312] In some non-restricted instances, the NIC transition region 301 t It can extend laterally to the non-transitional portion 301 of the NIC in the first part 301. n Between and the NIC edge 915.

[0313] In some non-restricted instances, in a plane, the NIC transition region 301 t It can revolve around the non-transitional part 301 of Part 1. n And / or extend along its perimeter.

[0314] In some non-limiting instances, along at least one horizontal axis, the NIC non-transition portion 301 n It can occupy the entirety of the first part 301, so that there is no NIC transition area 301 between it and the second part 302. t .

[0315] As shown in Figure 3, in some non-limiting instances, NIC 310 can be in the NIC non-transition section 301 of the first part 301. n The NIC 310 has an average film thickness d2, which can range from approximately 1-100 nm, 2-50 nm, 3-30 nm, 4-20 nm, 5-15 nm, 5-10 nm, or 1-10 nm. In some non-limiting examples, the NIC 310 is located in the non-transition portion 301 of the first part 301. n The average film thickness d in 2可 They are substantially the same, or constant. In some non-restrictive instances, in the non-transition section 301 of the NIC... nWithin this range, the thickness of NIC 310 can be maintained within approximately 95% or 90% of the average film thickness d2 of NIC 310.

[0316] In some non-limiting examples, the average film thickness d 2 It can be less than approximately: 80nm, 60nm, 50nm, 40nm, 30nm, 20nm, 15nm, or 10nm. In some non-limiting examples, the average film thickness d2 of NIC 310 can exceed approximately: 3nm, 5nm, or 8nm.

[0317] In some non-limiting instances, NIC 310 is in the NIC non-transition section 301 of the first part 301. n The average film thickness d2 in the NIC 310 can be less than about 10 nm. Without wishing to be bound by any particular theory, it has been found somewhat surprisingly that the average film thickness d2 of the NIC 310 is greater than zero and does not exceed about 10 nm, at least in some non-limiting instances. As a non-limiting example, this is for achieving a non-transition portion 301 of the NIC relative to the first part 301. n The enhanced patterned contrast of the NIC 310 deposition layer 330, which has an average film thickness d2 of more than 10 nm, provides certain advantages.

[0318] In some non-limiting instances, NIC 310 may have a NIC transition region 301 t The NIC thickness decreases from its maximum value to its minimum value. In some non-limiting instances, the maximum value may be located in and / or near the NIC transition region 301 of the first part 301. t and NIC non-transition part 301 n At the boundary between. In some non-restrictive instances, the minimum value may be located at and / or near the NIC edge 915. In some non-restrictive instances, the maximum value may be at the non-transition portion 301 of the NIC in the first part 301. n The average film thickness d2 in the middle. In some non-limiting examples, the maximum value may not exceed approximately: the non-transition portion 301 of the NIC in the first part 301. n The average film thickness d2 is 95% or 90%. In some non-limiting examples, the minimum value may range from about 0 to 0.1 nm.

[0319] In some non-restricted instances, the NIC transition region 301 t The profile of the NIC thickness can be sloping and / or follow a gradient. In some non-limiting instances, this profile can be tapered. In some non-limiting instances, the taper can follow a linear, non-linear, parabolic, and / or exponentially decaying profile.

[0320] In some non-restrictive instances, NIC 310 can completely cover NIC transition region 301. t The underlying surface in the NIC. In some non-limiting instances, at least a portion of the underlying surface may be in the NIC transition region 301. t The NIC 310 is not covered in this area. In some non-restricted instances, the NIC 310 may be present in the NIC transition region 301. t At least a portion of it includes a substantially closed coating 340. In some non-limiting instances, the NIC 310 may have a NIC transition region 301. t At least a portion of it includes discontinuous layers 940 ( Figure 9A ).

[0321] In some non-limiting examples, at least a portion of NIC 310 in the first part 301 may be substantially lacking the sealing coating 340 of the deposited layer 330. In some non-limiting examples, at least a portion of the exposed layer surface 11 in the first part 301 may be substantially lacking the deposited layer 330 or the deposited material 531.

[0322] In some non-limiting instances, along at least one horizontal axis, including but not limited to the X-axis, the NIC non-transition region 301 n It can have a width w1, and the NIC transition portion 301 t It can have a width of w2. In some non-restrictive instances, the NIC non-transition region 301 n It may have a cross-sectional area of ​​301. In some non-limiting examples, this area can be approximated by multiplying the average film thickness d2 by the width w1. In some non-limiting examples, the NIC transition portion 301... t It can have a cross-sectional area a2, and in some non-limiting instances, said area can be achieved by extending the NIC transition portion 301. t The average film thickness is approximated by multiplying the width w1.

[0323] In some unrestricted instances, w1 may exceed w2. In some unrestricted instances, the quotient of w1 / w2 may be at least about: 5, 10, 20, 50, 100, 500, 1,000, 1,500, 5,000, 10,000, 50,000, or 100,000.

[0324] In some non-limiting instances, at least one of w1 and w2 may exceed the average film thickness d1 of the underlying surface.

[0325] In some unrestricted instances, at least one of w1 and w2 may exceed d2. In some unrestricted instances, both w1 and w2 may exceed d2. In some unrestricted instances, both w1 and w2 may exceed d1, and d1 may exceed d2.

[0326] Those skilled in the art will understand that, although not explicitly shown, the NIC material 511 may also be present to some extent at the interface between the deposited layer 330 and the underlying surface (including, but not limited to, the NPC 520 layer (not shown) and / or the surface of the substrate 10). Such material may be deposited due to a shadowing effect, wherein the deposited pattern differs from the pattern of the mask 600, and in some non-limiting instances, this results in some evaporated NIC material 512 being deposited on the masked portion of the target surface 11. As a non-limiting example, such material may be formed as a granular structure 941 and / or as a thin film with a thickness significantly less than the average thickness of the NIC 310.

[0327] In some non-limiting examples, NIC 310 may serve as an optical coating. In some non-limiting examples, NIC 310 may modify at least one property and / or characteristic of light emitted from at least one emission region 2210 of device 300. In some non-limiting examples, NIC 310 may exhibit a degree of turbidity, resulting in the scattering of emitted light. In some non-limiting examples, NIC 310 may include a crystalline material for scattering transmitted light. In some non-limiting examples, such light scattering may promote enhanced external coupling of light from the device. In some non-limiting examples, NIC 310 may initially be deposited as substantially amorphous, including but not limited to substantially amorphous, and thus, after its deposition, NIC 310 may become crystalline and subsequently be used as an optical coupler.

[0328] sedimentary layer

[0329] A deposition layer 330 is disposed on the exposed surface 11 of the bottom layer surface in the second part 302 of the lateral aspect of the device 300, the lateral aspect being defined by a horizontal axis, including but not limited to the X-axis. From Figure 9B As can be better seen, in some non-limiting instances, the NIC 310 in the first part 301 may be surrounded on all sides by the deposition layer 330 in the second part 302, such that the second part 302 has a boundary defined by a further extent or edge 935 of the deposition layer 330 in the lateral aspect along each lateral axis. In some non-limiting instances, the edge 935 of the deposition layer in the lateral aspect may be defined by the perimeter of the second part 302 in this aspect.

[0330] In some non-limiting instances, the second part 302 may include at least one deposition layer transition region 302. t In the lateral direction, the thickness of the deposited layer 330 can transition from a maximum thickness to a decreasing thickness. The range of the second part 302 that does not exhibit this transition is designated as the non-transition portion 302 of the second part 302. n In some non-limiting instances, the deposition layer 330 may be located in the non-transition portion 302 of the second part 302. n A basically closed coating 340 is formed in the middle.

[0331] In some non-limiting examples, in a plane, the sedimentary transition region 302 t It can extend laterally to the non-transition section 302 of the second part 302 n Between and the edge of the sedimentary layer at 935.

[0332] In some non-limiting examples, in a plane, the sedimentary transition region 302 t It can revolve around the non-transitional part 302 of Part 2. n And / or extend along its perimeter.

[0333] In some non-limiting instances, along at least one horizontal axis, the non-transition portion 302 n It can occupy the entirety of the second part 302, so that there is no sedimentary transition region 302 between it and the first part 301. t .

[0334] like Figure 9A As shown, in some non-limiting examples, the deposition layer 330 may be located in the non-transition portion 302 of the second part 302. n The film has an average film thickness d3, which can range from about 1-500 nm, 5-200 nm, 5-40 nm, 10-30 nm, or 10-100 nm. In some non-limiting examples, d3 can exceed about 10 nm, 50 nm, or 100 nm. In some non-limiting examples, the deposited layer 330 is located in the non-transition portion 302 of the second part 302. t The average film thickness d3 can be substantially the same or constant.

[0335] In some non-limiting instances, d3 can exceed the average film thickness d1 of the underlying surface.

[0336] In some non-limiting instances, the quotient d3 / d1 can be at least about: 1.5, 2, 5, 10, 20, 50, or 100. In some non-limiting instances, the range of the quotient d3 / d1 can be between about: 0.1-10 or 0.2-40.

[0337] In some non-limiting instances, d3 can exceed the average film thickness d2 of NIC 310.

[0338] In some non-limiting instances, the quotient d3 / d2 can be at least about: 1.5, 2, 5, 10, 20, 50, or 100. In some non-limiting instances, the range of the quotient d3 / d2 can be between about: 0.2-10 or 0.5-40.

[0339] In some unrestricted instances, d3 can exceed d2 and d2 can exceed d1.

[0340] In some non-restrictive instances, the quotient d2 / d1 can be between approximately 0.2-3 or 0.1-5.

[0341] In some non-limiting instances, along at least one horizontal axis, including but not limited to the X-axis, the non-transition region 302 n It has a width of w3. In some non-restrictive instances, the non-transition region is 302. n It can have a cross-sectional area a3, and in some non-limiting instances, the area can be approximated by multiplying the average film thickness d3 by the width w3.

[0342] In some unrestricted instances, w3 can exceed the NIC non-transition region 301. n The width is w1. In some unrestricted instances, w1 may exceed w3.

[0343] In some non-limiting instances, the quotient w1 / w3 may range from approximately 0.1 to 10, 0.2 to 5, 0.3 to 3, or 0.4 to 2. In some non-limiting instances, the quotient w3 / w1 may be at least 1, 2, 3, or 4.

[0344] In some non-limiting instances, w3 can exceed the average film thickness d3 of the deposited layer 330.

[0345] In some non-limiting instances, the quotient w3 / d3 can be at least about: 10, 50, 100, or 500. In some non-limiting instances, the quotient w3 / d3 can be less than about 100,000.

[0346] In some non-limiting examples, the sedimentary layer 330 may have a sedimentary layer transition region 302. t The thickness decreases from the maximum to the minimum value. In some non-limiting instances, the maximum value may be located in and / or near the deposition layer transition region 302 of the second part 302. t Non-transition part 302 nAt the boundary between. In some non-limiting instances, the minimum value may be located at and / or near the edge of the deposition layer 935. In some non-limiting instances, the maximum value may be at the non-transition portion 302 of the second part 302. n The average film thickness d3 in the middle. In some non-limiting examples, the minimum value can range from about 0 to 0.1 nm. In some non-limiting examples, the minimum value can be the non-transition portion 302 of the second part 302. n The average film thickness d3 in the film.

[0347] In some non-limiting examples, the sedimentary transition region 302 t The thickness profile can be sloping and / or follow a gradient. In some non-limiting instances, this profile can be tapered. In some non-limiting instances, the taper can follow a linear, non-linear, parabolic, and / or exponentially decaying profile.

[0348] In some non-limiting instances, such as in device 300 Figure 9C Example version 900 c As a non-limiting example, sedimentary layer 330 can completely cover sedimentary layer transition region 302. t The underlying surface in the deposition layer. In some non-limiting examples, at least a portion of the underlying surface may be in the transition region 302 of the deposition layer. t The middle layer is not covered by sediment layer 330. In some non-limiting examples, sediment layer 330 may be in the sediment layer transition region 302. t At least a portion of it includes a substantially closed coating 340. In some non-limiting examples, the deposited layer 330 may be in the deposited layer transition region 302. t At least a portion of it includes discontinuous layer 940.

[0349] In some non-limiting instances, the deposition layer edge 935 may laterally connect with the non-transition portion 301 of the first part 301. n The two parts are spaced apart so that there is no overlap between the first part 301 and the second part 302 in the lateral aspect.

[0350] In some non-limiting instances, at least a portion of the first part 301 and at least a portion of the second part 302 may overlap in the lateral direction. This overlap is identified by the overlapping portion 903, as... Figure 9A As shown in the non-limiting example, at least a portion of the second part 302 overlaps with at least a portion of the first part 301.

[0351] In some non-restrictive instances, such as as Figure 9D As shown in the non-limiting example, the sedimentary layer transition region 302 tAt least a portion of it can be placed in the NIC transition area 301 t Above at least a portion. In some non-restricted instances, the NIC transition region 301 t At least a portion may be substantially lacking in the deposition layer 330 and / or deposition material 531. In some non-limiting instances, deposition material 531 may be present in the NIC transition region 301. t A discontinuous layer 940 is formed on at least a portion of the exposed layer surface 11.

[0352] In some non-restrictive instances, such as as Figure 9E As shown in the non-limiting example, the sedimentary layer transition region 302 t At least a portion of it can be placed in the non-transition section 301 of the NIC in the first part 301. n At least a part of it.

[0353] Although not shown, those skilled in the art will understand that the overlapping portion 903 can reflect a scenario in which at least a portion of the first portion 301 overlaps with at least a portion of the second portion 302.

[0354] Therefore, in some non-restrictive instances, the NIC transition region 301 t At least a portion of it can be placed in the sedimentary transition region 302 t Above at least a portion of it. In some non-limiting instances, the sedimentary transition region 302 t At least a portion may be substantially lacking NIC 310 and / or NIC material 511. In some non-limiting instances, NIC material 511 may be present in the deposition layer transition region 302. t A discontinuous layer 940 is formed on at least a portion of the exposed layer surface.

[0355] In some non-restricted instances, the NIC transition region 301 t At least a portion of it can be placed in the non-transition portion 302 of the second part 302. n At least a part of it.

[0356] In some non-limiting instances, the NIC edge 915 may be laterally connected to the non-transition portion 302 of the second part 302. n Separately spaced.

[0357] In some non-limiting examples, the sheet resistance R2 of the deposited layer 330 may typically correspond to the sheet resistance of the deposited layer 330 measured or determined when isolated from other components, layers, and / or parts of the device 300. In some non-limiting examples, the deposited layer 330 may be formed as a thin film. Therefore, in some non-limiting examples, the characteristic sheet resistance of the deposited layer 330 may be determined and / or calculated based on the composition, thickness, and / or morphology of such a thin film. In some non-limiting examples, the sheet resistance R2 may not exceed about: 10 Ω / □, 5 Ω / □, 1 Ω / □, 0.5 Ω / □, 0.2 Ω / □, or 0.1 Ω / □.

[0358] In some non-limiting instances, the deposition layer 330 may include deposition material 531.

[0359] In some non-limiting examples, the deposited material 531 may include a metal having a bond dissociation energy not exceeding about: 300 kJ / mol, 200 kJ / mol, 165 kJ / mol, 150 kJ / mol, 100 kJ / mol, 50 kJ / mol, or 20 kJ / mol.

[0360] In some non-limiting examples, the deposited material 531 may include an electronegative metal, the electronegativity of which does not exceed about 1.4, 1.3 or 1.2.

[0361] In some non-limiting examples, the deposition material 531 may include elements selected from: potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), Yb, Ag, gold (Au), copper (Cu), aluminum (Al), Mg, zinc (Zn), cadmium (Cd), tin (Sn), or yttrium (Y). In some non-limiting examples, the element may include K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, and / or Mg. In some non-limiting examples, the element may include Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include Mg, Zn, Cd, or Yb. In some non-limiting examples, the element may include Mg, Ag, Al, Yb, or Li. In some non-limiting examples, the element may include Mg, Ag, or Yb. In some non-limiting instances, the element may include Mg or Ag. In some non-limiting instances, the element may be Ag.

[0362] In some non-limiting examples, the deposition material 531 may include a pure metal. In some non-limiting examples, the deposition material 531 may be a pure metal. In some non-limiting examples, the deposition material 531 may be pure Ag or substantially pure Ag. In some non-limiting examples, the purity of substantially pure Ag may be at least about: 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%. In some non-limiting examples, the deposition material 531 may be pure Mg or substantially pure Mg. In some non-limiting examples, the purity of substantially pure Mg may be at least about: 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%.

[0363] In some non-limiting examples, the deposited material 531 may include an alloy. In some non-limiting examples, the alloy may be an Ag-containing alloy, a Mg-containing alloy, or an AgMg-containing alloy. In some non-limiting examples, the alloy composition of the AgMg-containing alloy, by volume, may range from 1:10 (Ag:Mg) to about 10:1.

[0364] In some non-limiting examples, the deposition material 531 may include other metals in place of Ag and / or in combination with Ag. In some non-limiting examples, the deposition material 531 may include an alloy of Ag with at least one other metal. In some non-limiting examples, the deposition material 531 may include an alloy of Ag with Mg and / or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition of about 5-95% by volume Ag, with the remainder being other metals. In some non-limiting examples, the deposition material 531 may include Ag and Mg. In some non-limiting examples, the deposition material 531 may include an Ag:Mg alloy with a volume composition of about 1:10 to 10:1. In some non-limiting examples, the deposition material 531 may include Ag and Yb. In some non-limiting examples, the deposition material 531 may include a Yb:Ag alloy with a volume composition of about 1:20 to 10:1. In some non-limiting examples, the deposition material 531 may include Mg and Yb. In some non-limiting examples, the deposition material 531 may include a Mg:Yb alloy. In some non-limiting examples, the deposition material 531 may include Ag, Mg, and Yb. In some non-limiting examples, the deposition layer 330 may include an Ag:Mg:Yb alloy.

[0365] In some non-limiting examples, the deposition layer 330 may include at least one additional element. In some non-limiting examples, such an additional element may be a non-metallic element. In some non-limiting examples, the non-metallic material may be O, S, N, or C. Those skilled in the art will understand that in some non-limiting examples, such an additional element may be incorporated into the deposition layer 330 as a contaminant due to the presence of such an additional element in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the concentration of such an additional element may be limited to below a threshold concentration. In some non-limiting examples, such an additional element may form compounds with other elements in the deposition layer 330. In some non-limiting examples, the concentration of the non-metallic element in the deposition material 531 may be less than about: 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, or 0.0000001%. In some non-limiting examples, the deposition layer 330 has a composition in which the combined amount of O and C is less than about: 10%, 5%, 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, or 0.0000001%.

[0366] It has now been found, somewhat surprisingly, that reducing the concentration of certain non-metallic elements in the deposition layer 330, particularly where the deposition layer 330 comprises substantially metals and / or metal alloys, can promote selective deposition of the deposition layer 330. Without wishing to be bound by any particular theory, it can be hypothesized that certain non-metallic elements, such as O or C, when present in the vapor flux and / or deposition chamber and / or environment of the deposition layer 330, can deposit on the surface of the NIC 310 to act as nucleation sites for the metallic elements of the deposition layer 330. It can be hypothesized that reducing the concentration of such non-metallic elements that can act as nucleation sites may help reduce the amount of deposited material 531 deposited on the exposed surface 11 of the NIC 310.

[0367] In some non-limiting instances, the deposited material 531 in the first part 301 and the underlying substrate thereunder may include ordinary metal.

[0368] In some non-limiting examples, the deposition layer 330 may include multiple layers of deposition material 531. In some non-limiting examples, the deposition material 531 of the first layer of the multiple layers may be different from the deposition material 531 of the second layer of the multiple layers. In some non-limiting examples, the deposition layer 330 may include a multilayer coating. In some non-limiting examples, such a multilayer coating may be Yb / Ag, Yb / Mg, Yb / Mg:Ag, Yb / Yb:Ag, Yb / Ag / Mg, or Yb / Mg / Ag.

[0369] In some non-limiting examples, the deposited layer 330 may be arranged in a pattern that can be defined by at least one region, said region substantially lacking the sealing coating 340 of the deposited layer 330. In some non-limiting examples, at least one region may separate the deposited layer 330 into its plurality of discrete segments. In some non-limiting examples, each discrete segment of the deposited layer 330 may be considered a separate second part 302. In some non-limiting examples, the plurality of discrete segments of the deposited layer 330 may be physically spaced apart from each other in their lateral aspects. In some non-limiting examples, at least two of such discrete segments of the deposited layer 330 may be electrically coupled. In some non-limiting examples, at least two of such discrete segments of the deposited layer 330 may each be electrically coupled to a common conductive layer or coating, including but not limited to the surface of the conductive layer, to allow current to flow therebetween. In some non-limiting examples, at least two of such discrete segments of the deposited layer 330 may be electrically insulated from each other.

[0370] In some non-limiting instances, the deposition layer 330 may be formed as a non-transitional portion 302 across the second part 302. n Transition region 302 between sedimentary layers t A single, monolithic coating.

[0371] Particles

[0372] In some non-restrictive instances, such as Figure 9A As shown, at least one particle may be present, including, but not limited to, nanoparticles (NPs), islands, plates, disconnected clusters, and / or networks (collectively referred to as particle structure 941) disposed on the NIC 310 of the first part 301. In some non-limiting embodiments, at least one particle structure 941 is disposed on the exposed layer surface 11 of the NIC 310. In some non-limiting embodiments, multiple such particle structures 941 may be present. In some non-limiting embodiments, such multiple particle structures 941 may form a discontinuous layer 940.

[0373] Without wishing to be bound by any particular theory, it may be assumed that while the formation of the closed coating 340 of the deposited material 531 can be substantially suppressed on the NIC 310, in some non-limiting instances, when the NIC 310 is exposed to the deposition of the deposited material 531, some vapor monomers of the deposited material 531 may eventually form at least one particulate structure 941 of the deposited material 531 thereon.

[0374] In some non-limiting instances, at least some of the particulate structures 941 may be disconnected from each other. In other words, in some non-limiting instances, the discontinuous layer 940 may include features comprising particulate structures 941 that are physically separated from each other, such that the particulate structures 941 do not form a closed coating 340. Thus, such a discontinuous layer 940 may, in some non-limiting instances, include a thin, dispersed layer of deposited material 531 formed as particulate structures 941, which is interposed at the interface between the NIC 310 and at least one capping layer in the device 300, and substantially across the lateral aspect of said interface.

[0375] In some non-limiting examples, at least one particulate structure 941 of the deposited material 531 may be in physical contact with the exposed surface 11 of the NIC 310. In some non-limiting examples, substantially all particulate structures 941 of the deposited material 531 may be in physical contact with the exposed surface 11 of the NIC 310.

[0376] Without wishing to be bound by any particular theory, it has been found, somewhat surprisingly, that such a thin, dispersed discontinuous layer 540 of deposited material 531 on the exposed surface 11 of the NIC 310, comprising, but not limited to, at least one granular structure 941, comprising, but not limited to, metallic granular structures 941, can exhibit one or more distinct properties and be accompanied by different behaviors, including, but not limited to, optical effects and properties of the device 300, as described herein. In some non-limiting instances, such effects and properties can be controlled to some extent by the deliberate selection of the characteristic size S1, size distribution, shape, surface coverage C1, configuration, deposition density, and / or dispersion D of the granular structures 941 on the NIC 310.

[0377] In some non-limiting instances, the formation of at least one of the characteristic size S1, size distribution, shape, surface coverage C1, configuration, deposition density, and / or dispersion D of such discontinuous layer 940 can be controlled, in some non-limiting instances, by wisely selecting at least one of the following: at least one property of NIC material 511, average film thickness d2 of NIC 310, introduction of heterogeneity in NIC 310, and / or deposition environment, including but not limited to temperature, pressure, duration, deposition rate, and / or deposition method of NIC 310.

[0378] In some non-limiting instances, the formation of at least one of the characteristic size S1, size distribution, shape, surface coverage C1, configuration, deposition density, and / or dispersion D of such discontinuous layer 940 can be controlled, in some non-limiting instances, by wisely selecting at least one of the following: at least one property of the deposition material 531, the extent to which NIC 310 can be exposed to the deposition of the deposition material 531 (in some non-limiting instances, this can be specified by the thickness of the corresponding discontinuous layer 940), and / or the deposition environment, including but not limited to the temperature, pressure, duration, deposition rate, and / or deposition method of the deposition material 531.

[0379] In some non-limiting instances, a fine metal mask (FMM) can be used to deposit discontinuous layers 540 in a patterned manner across the lateral extent of the NIC 310.

[0380] In some non-limiting instances, the discontinuous layer 540 may be arranged in a pattern that may be defined by at least one region therein, the region being substantially lacking the sealing coating 340 of the deposited material 531.

[0381] In some non-limiting instances, the characteristics of this discontinuous layer 940 may be, in some non-limiting instances, arbitrarily evaluated to some extent according to at least one of several criteria, which include, but are not limited to, the characteristic size S1, size distribution, shape, configuration, surface coverage C1, deposition distribution, dispersion D and / or pressure and / or degree of aggregation of the deposited material 531 formed on a portion of the exposed surface 11 of the underlying layer.

[0382] In some non-limiting instances, the evaluation of the discontinuity layer 940 according to such at least one criterion can be performed using various imaging techniques (including but not limited to TEM, AFM and / or SEM), including but not limited to measuring and / or calculating at least one property of the discontinuity layer 940.

[0383] Those skilled in the art will understand that such evaluation of discontinuity layer 940 can depend to a greater and / or lesser extent on the extent of the exposed surface 11 under consideration, which in some non-limiting instances may include an area and / or a region thereof. In some non-limiting instances, discontinuity layer 940 can be evaluated across the entire extent, in a first lateral aspect of the exposed surface 11 and / or in a second lateral aspect substantially lateral to the first lateral aspect. In some non-limiting instances, discontinuity layer 940 can be evaluated across an extent comprising at least one observation window applied to (a portion of) discontinuity layer 940.

[0384] In some non-limiting instances, at least one observation window may be located at a peripheral, internal, and / or grid coordinate position in the lateral aspect of the exposed layer surface 11. In some non-limiting instances, multiple observation windows may be used to evaluate the discontinuous layer 940.

[0385] In some non-limiting instances, the observation window may correspond to the field of view of an imaging technique applied to evaluate the discontinuous layer 940, including but not limited to TEM, AFM, and / or SEM. In some non-limiting instances, the observation window may correspond to a given magnification level, including but not limited to: 2.00 μm, 1.00 μm, 500 nm, or 200 nm.

[0386] In some non-limiting instances, the evaluation of the discontinuous layer 940, including but not limited to at least one observation window used for its exposed layer surface 11, may involve calculations and / or measurements by any number of mechanisms, including but not limited to manual counting and / or known estimation techniques. In some non-limiting instances, the known estimation techniques may include curve, polygon, and / or shape fitting techniques.

[0387] In some non-limiting instances, the evaluation of discontinuous layer 940, including but not limited to at least one observation window used for its exposed layer surface 11, may involve calculating and / or measuring average, median, pattern, maximum, minimum and / or other probabilistic, statistical and / or data manipulations of the calculated and / or measured values.

[0388] In some non-limiting examples, one of the criteria that can be used to evaluate such a discontinuous layer 940 may be the surface coverage C1 of the deposited material 531 on that (part) of the discontinuous layer 940. In some non-limiting examples, the surface coverage C1 may be expressed as a (non-zero) percentage coverage of the deposited material 531 on that (part) of the discontinuous layer 940. In some non-limiting examples, the percentage coverage may be compared with a maximum threshold percentage coverage.

[0389] In some non-limiting instances, the surface coverage C1 may substantially not exceed a portion of the maximum threshold percentage coverage of the discontinuous layer 940, which may result in different optical properties that may be imparted by this portion of the discontinuous layer 940 to photons passing through it, regardless of whether the photons are transmitted through the device 300 entirely and / or emitted therefrom, relative to photons passing through a portion of the discontinuous layer 940 with a surface coverage C1 substantially exceeding the maximum threshold percentage coverage.

[0390] In some non-limiting instances, one measure of the surface coverage C1 of the amount of conductive material on the surface is (light) transmittance, because in some non-limiting instances, conductive materials containing, but not limited to, metals (including, but not limited to, Ag, Mg or Yb) attenuate and / or absorb photons.

[0391] Those skilled in the art will understand that, in some non-limiting instances, surface coverage C1 can be understood to encompass one or both of grain size and sediment density. Therefore, in some non-limiting instances, two or more of these three criteria may be positively correlated. Indeed, in some non-limiting instances, the low surface coverage C1 criterion may include some combination between the low sediment density criterion and the low grain size criterion.

[0392] In some non-limiting instances, one of the criteria that can be used to evaluate such a discontinuous layer 940 may be the characteristic size S1 that makes up the granular structure 941.

[0393] In some non-limiting instances, the feature size S1 of at least one particle structure 941 of the discontinuous layer 940 may not exceed a maximum threshold size. Non-limiting instances of feature size S1 may include height, width, length, and / or diameter.

[0394] In some non-limiting instances, the feature size S1 of virtually all the granular structures 941 of the discontinuous layer 940 is within the specified range.

[0395] In some non-limiting instances, this feature size S1 may be characterized by a feature length, which may be considered as the maximum value of the feature size S1. In some non-limiting instances, such a maximum value may extend along the major axis of the particle structure 941. In some non-limiting instances, the major axis may be understood as a first dimension extending in a plane defined by a plurality of transverse axes. In some non-limiting instances, the feature width may be identified as a value of the feature size S1 of the particle structure 941, which may extend along the minor axis of the particle structure 941. In some non-limiting instances, the minor axis may be understood as a second dimension extending in the same plane but substantially transverse to the major axis.

[0396] In some non-limiting instances, the characteristic length of at least one particle structure 941 along the first dimension may be less than the maximum threshold size.

[0397] In some non-limiting instances, the feature width of at least one particle structure 941, along the second dimension, may be smaller than the maximum threshold size.

[0398] In some non-limiting instances, in a portion of the discontinuous layer 940, the size of the constituent particle structure 941 can be evaluated by calculating and / or measuring the characteristic size S1 of at least one such particle structure 941, including but not limited to its mass, volume, diameter, circumference, major axis and / or minor axis.

[0399] In some non-limiting instances, one of the criteria that can be used to evaluate such a discontinuous layer 940 may be its deposition density.

[0400] In some non-limiting instances, the feature size S1 of the granular structure 941 can be compared with the maximum threshold size.

[0401] In some non-limiting instances, the deposition density of the granular structure 941 can be compared with the maximum threshold deposition density.

[0402] In some non-limiting examples, the particle structure 941 may have a substantially circular shape. In some non-limiting examples, the particle structure 941 may have a substantially spherical shape.

[0403] For simplicity, in some non-limiting instances, it can be assumed that the longitudinal extent of each particle structure 941 can be substantially the same (in any case, it cannot be directly measured from a planar view SEM image), such that the size of the particle structure 941 (area) can be represented as a two-dimensional region coverage along a pair of horizontal axes. In this disclosure, references to (area) size can be understood to refer to this two-dimensional concept and are distinguished from sizes (without the prefix "area") that can be understood to refer to one-dimensional concepts (such as linear dimensions).

[0404] In fact, in some early studies, it appears that in some non-limiting instances, the longitudinal extent of this particle structure 941, along the longitudinal axis, may tend to be small relative to the transverse extent (along at least one transverse axis), such that the volume contribution of its longitudinal extent may be much smaller than that of its transverse extent. In some non-limiting instances, this can be represented by an aspect ratio (the ratio of the longitudinal extent to the transverse extent) that may be less than 1. In some non-limiting instances, such an aspect ratio may be approximately: 1:10, 1:20, 1:50, 1:75, or 1:300.

[0405] In this regard, the above-described assumption is that the longitudinal extent is substantially the same and can be ignored, so that it may be appropriate to represent the particle structure 941 as the coverage of a two-dimensional region.

[0406] Those skilled in the art will understand that, given the non-deterministic nature of the deposition process, particularly in the presence of defects and / or anomalies (including but not limited to heterogeneity, including but not limited to step edges, chemical impurities, bonding sites, kinks and / or contaminants therein) on the surface 11 of the exposed underlying material, and thus the formation of granular structures 941 thereon, as the deposition process continues, the non-uniformity of its aggregation, and given the uncertainty of the size and / or location of the observation window, as well as the inherent complexity and variability in calculating and / or measuring its characteristic size S1, spacing, deposition density, aggregation degree, etc., there can be considerable variability in the characteristics and / or topology within the observation window.

[0407] In this disclosure, certain details of the deposited material 531, including but not limited to the thickness profile and / or edge profile of the layer, are omitted for the purpose of simplicity of illustration.

[0408] Those skilled in the art will understand that certain metallic NPs, whether or not they are part of a discontinuous layer 940 of the deposited material 531, including but not limited to at least one granular structure 941, can exhibit surface plasmon (SP) excitation and / or coherent oscillations of free electrons, resulting in these NPs absorbing and / or scattering light within the EM spectral range (including but not limited to the visible spectrum and / or its sub-ranges). The optical response, including but not limited to the absorption of such localized SP (LSP) excitations and / or coherent oscillations into a focused EM spectrum (absorption spectrum) of its (sub)range, refractive index n, and / or extinction spectrum k, can be tailored by various properties of these NPs, including but not limited to characteristic size S1, size distribution, shape, surface coverage C1, configuration, deposition density, degree of dispersity D, and / or properties, including but not limited to the material and / or degree of aggregation of the nanostructure, and / or the medium adjacent to it.

[0409] This optical response, in the case of a photon-absorbing coating, can involve absorbing incident photons, thereby reducing reflection. In some non-limiting examples, absorption can be concentrated within a range of the EM spectrum, including, but not limited to, the visible spectrum, and / or its sub-ranges. In some non-limiting examples, using a photon-absorbing layer as part of an optoelectronic device can reduce dependence on polarizers therein.

[0410] The stability of OLED devices can be enhanced by incorporating an NP-based external coupling layer above the cathode layer to extract energy from plasma modes, as reported in Fusella et al., “Plasmonic enhancement of stability and brightness inorganic light-emitting devices,” *Nature*, 2020, 585, at 379-382. The NP-based external coupling layer was fabricated by spin-casting cubic Ag NPs on top of an organic layer atop the cathode. However, since most commercial OLED devices are fabricated using vacuum-based processes, spin casting from solution may not constitute a suitable mechanism for forming such an NP-based external coupling layer above the cathode.

[0411] The inventors have discovered that this NP-based external coupling layer above the cathode can be fabricated in a vacuum (and therefore potentially suitable for commercial OLED manufacturing processes) by depositing metal deposition material 531 in a discontinuous layer 940 onto a NIC 310, which in some non-limiting instances may be a cathode and / or may be deposited on a cathode. This process avoids the use of solvents or other wet chemicals that could damage the OLED device and / or adversely affect its reliability.

[0412] In some non-limiting instances, the presence of such discontinuous layers 940 of the deposited material 531 (including, but not limited to, at least one particulate structure 941) may help enhance the light extraction, performance, stability, reliability, and / or lifespan of the device.

[0413] In some non-limiting instances, in the layering device 300, the presence of at least one discontinuous layer 940 on and / or near the exposed layer surface 11 of the NIC 310 (and / or, in some non-limiting instances, and / or near the interface of such NIC 310 having at least one cover layer) can impart photonic optical effects, and / or (EM) signals emitted by and / or transmitted through the device.

[0414] Those skilled in the art will understand that while this paper presents a simplified model of the optical effect, other models and / or interpretations may also be applicable.

[0415] In some non-limiting examples, the presence of such a discontinuous layer 940 (including, but not limited to, at least one particulate structure 941) of the deposited material 531 can reduce and / or mitigate crystallization of the film layer, and / or stabilize the properties of the film disposed adjacent to it in a coating disposed in the longitudinal plane, including, but not limited to, NIC 310 and / or at least one capping layer, and in some non-limiting examples, reduce scattering. In some non-limiting examples, such a film may be and / or include at least one external coupling and / or encapsulation coating of the device, including, but not limited to, a capping layer (CPL).

[0416] In some non-limiting examples, the presence of such discontinuous layers 940 of the deposited material 531 (including, but not limited to, at least one particulate structure 941) can provide enhanced absorption in at least a portion of the UV spectrum. In some non-limiting examples, controlling the properties of such particulate structure 941, including but not limited to the characteristic size S1, size distribution, shape, surface coverage C1, configuration, deposition density, dispersion D, deposited material 531, and refractive index n, can facilitate control over the degree of absorption, wavelength range, and peak wavelength λ of the absorption spectrum. max This is included in the UV spectrum. Enhancing the absorption of light in at least a portion of the UV spectrum may be advantageous, for example, for improving device performance, stability, reliability, and / or lifespan.

[0417] In some non-limiting instances, optical effects can be described by their influence on the transmission and / or absorption wavelength spectrum (including its wavelength range and / or peak intensity).

[0418] Furthermore, while the proposed model may indicate certain effects exerted on the transmission and / or absorption of photons through this discontinuous layer 940, in some non-limiting instances, such effects may reflect local effects that may not be reflected on a broad observable basis.

[0419] In some non-limiting instances, at least one particulate structure 941 may comprise a particulate material.

[0420] In some non-limiting instances, the deposited material 531 in the discontinuous layer 940 of the first part 301, the underlying layer and / or deposited layer 330 therebelow may include a common metal.

[0421] In some non-limiting examples, the particulate material may include an element selected from K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, Mg, Zn, Cd, Sn, or Y. In some non-limiting examples, the element may include K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, or Mg. In some non-limiting examples, the element may include Cu, Ag, or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include Mg, Zn, Cd, or Yb. In some non-limiting examples, the element may include Mg, Ag, Al, Yb, or Li. In some non-limiting examples, the element may include Mg, Ag, or Yb. In some non-limiting examples, the element may include Mg or Ag. In some non-limiting examples, the element may be Ag.

[0422] In some non-limiting examples, the particulate material may include a pure metal. In some non-limiting examples, at least one particulate structure 941 may be a pure metal. In some non-limiting examples, at least one particulate structure 941 may be pure Ag or substantially pure Ag. In some non-limiting examples, the purity of substantially pure Ag may be at least about: 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%. In some non-limiting examples, at least one particulate structure 941 may be pure Mg or substantially pure Mg.

[0423] In some non-limiting examples, at least one particulate structure 941 may comprise an alloy. In some non-limiting examples, the alloy may be an Ag-containing alloy and a Mg-containing alloy, or an AgMg-containing alloy.

[0424] In some non-limiting examples, the particulate material may include other metals that replace or combine with Ag. In some non-limiting examples, the particulate material may include an alloy of Ag with at least one other metal. In some non-limiting examples, the particulate material may include an alloy of Ag with Mg or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition of about 5-95% by volume Ag, with the remainder being other metals. In some non-limiting examples, the particulate material may include Ag and Mg. In some non-limiting examples, the particulate material may include an Ag:Mg alloy with a volume composition of about 1:10-10:1. In some non-limiting examples, the particulate material may include Ag and Yb. In some non-limiting examples, the particulate material may include a Yb:Ag alloy with a volume composition of about 1:20-(1-10):1. In some non-limiting examples, the particulate material may include Mg and Yb. In some non-limiting examples, the particulate material may include a Mg:Yb alloy. In some non-limiting examples, the particulate material may include an Ag:Mg:Yb alloy.

[0425] In some non-limiting examples, at least one particulate structure 941 may include at least one additional element. In some non-limiting examples, such additional element may be a non-metallic element. In some non-limiting examples, the non-metallic material may be O, S, N, or C. Those skilled in the art will understand that in some non-limiting examples, such additional element may be incorporated as a contaminant into at least one particulate structure 941 due to the presence of such additional element in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, such additional element may form compounds with other elements of at least one particulate structure 941. In some non-limiting examples, the concentration of the non-metallic element in the deposition material 531 may be less than about: 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, or 0.0000001%. In some non-limiting examples, the deposition layer 330 may have a composition in which the combined amount of O and C is less than about: 10%, 5%, 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, or 0.0000001%.

[0426] In some non-limiting instances, at least one particulate structure 941, including but not limited to NP, is present on the exposed layer surface 11 of NIC 310, and may affect many optical properties of device 900, including but not limited to NP, in discontinuous layer 940.

[0427] Figure 10 This is a simplified block diagram of the cross-section of an example electroluminescent device 1000 according to the present disclosure. In some non-limiting embodiments, device 1000 is an OLED.

[0428] Device 1000 includes a substrate 10 on which a front plate 101010 comprising multiple layers (a first electrode 1020, at least one semiconductive layer 1030, and a second electrode 1040, respectively) is disposed. In some non-limiting embodiments, the front plate 101010 may provide a mechanism for photon emission and / or manipulation of emitted photons. In some non-limiting embodiments, a barrier coating 2050 may be provided to surround and / or encapsulate the layers 1020, 1030, 1040 and / or the substrate 10 disposed thereon.

[0429] In some non-limiting examples, the deposition layer 330 and the underlying surface together form at least a portion of at least one of the first electrode 1020 and the second electrode 1040 of the device 1000. In some non-limiting examples, the deposition layer 330 and the underlying surface together form at least a portion of the cathode 1242 of the device 1000.

[0430] In some non-limiting examples, device 1000 may be electrically coupled to power supply 1005. When coupled in this way, device 1000 may emit photons as described herein.

[0431] In some non-limiting examples, device 1000 can be classified according to the emission direction of the photons it generates. In some non-limiting examples, if the generated photons are emitted toward and through the substrate 10 at the bottom of device 1000 and away from the layers 1020, 1030, 1040 disposed on top of the substrate 10, then device 1000 can be considered a bottom-emitting device. In some non-limiting examples, if photons are emitted away from the substrate 10 at the bottom of device 1000 and toward and / or through the top layer 1040, which is disposed on top of the substrate 10 together with the intermediate layers 1020, 1030, then device 1000 can be considered a top-emitting device. In some non-limiting examples, if device 1000 is configured to emit photons both at the bottom (towards and through the substrate 10) and at the top (towards and through the top layer 1040), then the device can be considered a double-sided emitting device.

[0432] substrate

[0433] In some instances, substrate 10 may include a base substrate 1012. In some instances, the base substrate 1012 may be formed of a material suitable for its use, including but not limited to inorganic materials, including but not limited to silicon (Si), glass, metals (including but not limited to metal foil), sapphire and / or other inorganic and / or organic materials, including but not limited to polymers, including but not limited to polyimide and / or silicon-based polymers. In some instances, the base substrate 1012 may be rigid or flexible. In some instances, substrate 1012 may be defined by at least one flat surface. In some non-limiting instances, substrate 10 has at least one surface, and the remaining front plane 1010 assembly of the surface support device 1000 includes, but is not limited to, a first electrode 1020, at least one semiconducting layer 1030, and / or a second electrode 1040.

[0434] In some non-limiting instances, such surfaces may be organic and / or inorganic surfaces.

[0435] In some instances, in addition to the base substrate 1012, the substrate 10 may also include one or more additional organic and / or inorganic layers (not shown or specifically described herein) supported on the exposed layer surface 11 of the base substrate 1012.

[0436] In some non-limiting instances, such additional layers may include and / or form one or more organic layers, which may include, replace and / or supplement one or more of the at least one semiconductive layer 1030.

[0437] In some non-limiting instances, such additional layers may include one or more inorganic layers, which may include and / or form one or more electrodes, and in some non-limiting instances, the electrodes may include, replace, and / or supplement the first electrode 1020 and / or the second electrode 1040.

[0438] In some non-limiting embodiments, such additional layers may include a backplane layer 1015 and / or be formed from and / or as said backplane layer. In some non-limiting embodiments, the backplane layer 1015 contains a power supply circuit system and / or switching elements for the driving device 1000, including, but not limited to, electronic TFT structures and / or components 1100 that can be formed by photolithography. Figure 11 The process may not be provided in a low-pressure environment (including but not limited to vacuum), and / or may be provided before the introduction of a low-pressure environment.

[0439] In this disclosure, semiconductor materials can be described as materials that typically exhibit a band gap. In some non-limiting embodiments, the band gap may be formed between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the semiconductor material. Therefore, semiconductor materials typically exhibit conductivity lower than that of conductive materials (including but not limited to metals) but higher than that of insulating materials (including but not limited to glass). In some non-limiting embodiments, the semiconductor material may include organic semiconductor materials. In some non-limiting embodiments, the semiconductor material may include inorganic semiconductor materials.

[0440] Backplane and the TFT structure therein

[0441] Figure 11 This is a simplified cross-sectional view of an example of a substrate 10 of device 1000, the substrate including its backplane layer 1015. In some non-limiting embodiments, the backplane 1015 of substrate 10 may include one or more electronic and / or optoelectronic components, including, but not limited to, transistors, resistors, and / or capacitors, such as those that may support device 1000 as an active matrix and / or passive matrix device. In some non-limiting embodiments, such a structure may be a thin-film transistor (TFT) structure, as shown at 1100. In some non-limiting embodiments, the TFT structure 1100 may be fabricated using organic and / or inorganic materials to form various layers 1110, 112, 1130, 1140, 1150, 1160, 1170, 1180 and / or multiple portions of the backplane layer 1015 of substrate 10 above the base substrate 1012. Figure 11 In the diagram, the TFT structure 1000 shown is a top-gate TFT. In some non-limiting examples, TFT technology and / or structures may be employed, including but not limited to one or more layers of layers 1110, 1120, 1130, 1140, 1150, 1170, 1170, 1180, to implement non-transistor components including but not limited to resistors and / or capacitors.

[0442] In some non-limiting embodiments, the backplane 1015 may include a buffer layer 1110 deposited on the exposed layer surface 11 of the base substrate 1012 to support components of the TFT structure 1100. In some non-limiting embodiments, the TFT structure 1100 may include a semiconductor active region 1120, a gate insulating layer 1130, a TFT gate electrode 1140, an interlayer insulating layer 1150, a TFT source electrode 1160, a TFT drain electrode 1170, and / or a TFT insulating layer 1180. In some non-limiting embodiments, the semiconductor active region 1120 may be formed over a portion of the buffer layer 1110, and the gate insulating layer 1130 is deposited to substantially cover the semiconductor active region 1120. In some non-limiting embodiments, the gate electrode 1140 may be formed on top of the gate insulating layer 1130, and the interlayer insulating layer 1150 may be deposited thereon. The TFT source electrode 1170 and TFT drain electrode 1170 can be formed such that they extend through the opening formed by both the interlayer insulating layer 1150 and the gate insulating layer 1130, so that they can be electrically coupled to the semiconductor active region 1120. Then, a TFT insulating layer 1180 can be formed on the TFT structure 1100.

[0443] In some non-limiting examples, one or more of layers 1110, 1120, 1130, 1140, 1150, 1160, 1170, and 1180 of the backplane 1015 may be patterned using photolithography, which uses a photomask to expose selective portions of the photoresist covering the underlying device layer to UV light. Depending on the type of photoresist used, the exposed or unexposed portions of the photomask may then be removed to reveal the desired portions of the underlying device layer. In some examples, the photoresist is a positive photoresist, wherein the selective portions exposed to UV light are subsequently substantially removable, while the remaining portions not so exposed are subsequently substantially removable. In some non-limiting examples, the photoresist is a negative photoresist, wherein the selective portions exposed to UV light are subsequently substantially removable, while the remaining portions not so exposed are subsequently substantially removable. Therefore, patterned surfaces can be etched (including but not limited to chemical and / or physical) and / or washed away and / or removed to effectively remove exposed portions of such layers 1110, 1120, 1130, 1140, 1150, 1160, 1170, 1180.

[0444] Furthermore, although Figure 11 The top gate TFT structure 1100 is shown, but those skilled in the art will understand that other TFT structures, including but not limited to the bottom gate TFT structure, can be formed in the backplane 1015 without departing from the scope of this disclosure.

[0445] In some non-limiting examples, the TFT structure 1100 may be an n-type TFT and / or a p-type TFT. In some non-limiting examples, the TFT structure 1100 may combine any one or more of amorphous Si (a-Si), indium gallium zinc oxide (Zn) (IGZO), and / or low-temperature polycrystalline Si (LTPS).

[0446] First electrode

[0447] A first electrode 1020 is deposited on the substrate 10. In some non-limiting embodiments, the first electrode 1020 may be electrically coupled to a terminal of a power supply 1005 and / or ground. In some non-limiting embodiments, the first electrode 1020 is connected via at least one drive circuit 1200. Figure 12 In some non-limiting instances, the driving circuitry may be coupled in such a way that at least one TFT structure 1100 is incorporated in the backplane 1015 of the substrate 10.

[0448] In some non-limiting examples, the first electrode 1020 may include an anode 1241. Figure 12 ) and / or cathode 1242 ( Figure 12 In some non-limiting examples, the first electrode 1020 is the anode 1241.

[0449] In some non-limiting embodiments, the first electrode 1020 can be formed by depositing at least one thin conductive film on a portion of the substrate 10. In some non-limiting embodiments, there can be multiple first electrodes 1020, which are spatially arranged over the lateral aspect of the substrate 10. In some non-limiting embodiments, one or more of such at least one first electrode 1020 can be deposited on a portion of a TFT insulating layer 1180 spatially arranged in the lateral aspect. If so, in some non-limiting embodiments, at least one of such at least one first electrode 1020 can extend through an opening in the corresponding TFT insulating layer 1180, such as... Figure 13 As shown, electrodes 1140, 1160, and 1170 are electrically coupled to the TFT structure 1100 in the backplane 1015. Figure 13 In the diagram, a portion of the at least one first electrode 1020 is shown coupled to the TFT drain electrode 1170.

[0450] In some non-limiting examples, the at least one first electrode 1020 and / or at least one thin film thereof may comprise a variety of materials, including but not limited to one or more metallic materials, including but not limited to Mg, Al, calcium (Ca), Zn, Ag, Cd, Ba or Yb or any combination of two or more thereof, including but not limited to alloys containing any of such materials, one or more metal oxides, including but not limited to transparent conductive oxides (TCO), including but not limited to ternary compositions, such as but not limited to fluorine tin oxide (FTO), indium zinc oxide (IZO) or indium tin oxide (ITO) or any combination of two or more thereof or combinations in different proportions or combinations of two or more thereof in at least one layer, and any one or more thereof may be, but is not limited to, thin films.

[0451] In some non-limiting examples, a variety of techniques may be used to selectively deposit, deposit, and / or process a thin conductive film including the first electrode 1020, including but not limited to evaporation (including but not limited to thermal evaporation and / or electron beam evaporation), photolithography, printing (including but not limited to inkjet and / or vapor jet printing, roll-to-roll printing and / or microcontact transfer printing), PVD (including but not limited to sputtering), CVD (including but not limited to PECVD and / or OVPD), laser annealing, LITI patterning, ALD, coating (including but not limited to spin coating, dip coating, line coating and / or spray coating) and / or any combination of two or more of these.

[0452] Second electrode

[0453] A second electrode 1040 is deposited on at least one semiconductive layer 1030. In some non-limiting embodiments, the second electrode 1040 is electrically coupled to a terminal of a power supply 1005 and / or ground. In some non-limiting embodiments, the second electrode 1040 is coupled via at least one driving circuit 1200, which may incorporate at least one TFT structure 1100 in the backplane 1015 of the substrate 10.

[0454] In some non-limiting examples, the second electrode 1040 may include an anode 1241 and / or a cathode 1242. In some non-limiting examples, the second electrode 1030 is a cathode 1242.

[0455] In some non-limiting embodiments, the second electrode 1040 can be formed by depositing a deposition layer 330 on at least one semiconductive layer 1030 (as at least one thin film in some non-limiting embodiments). In some non-limiting embodiments, there can be a plurality of second electrodes 1040, which are spatially arranged on the lateral aspect of at least one semiconductive layer 1030.

[0456] In some non-limiting examples, the at least one second electrode 1040 may comprise a variety of materials, including but not limited to one or more metallic materials, including but not limited to Mg, Al, Ca, Zn, Ag, Cd, Ba, or Yb or any combination of two or more thereof, including but not limited to alloys containing any of such materials, one or more metal oxides, including but not limited to TCO, including but not limited to ternary compositions such as but not limited to FTO, IZO, and / or ITO, or any combination of two or more thereof or combinations in different proportions, or zinc oxide (ZnO) or other oxides containing indium (In) or Zn, or any combination of two or more thereof in at least one layer, or one or more non-metallic materials, any one or more of which may be, but not limited to, thin conductive films. In some non-limiting examples, for Mg:Ag alloys, the alloy composition, by volume, may range from about 1:9 to 9:1.

[0457] In some non-limiting instances, a variety of techniques may be used to selectively apply, deposit, and / or process a thin conductive film including the second electrode 1040, including but not limited to evaporation (including but not limited to thermal evaporation and / or electron beam evaporation), photolithography, printing (including but not limited to inkjet and / or vapor jet printing, roll-to-roll printing and / or microcontact transfer printing), PVD (including but not limited to sputtering), CVD (including but not limited to PECVD and / or OVPD), laser annealing, LITI patterning, ALD, coating (including but not limited to spin coating, dip coating, line coating and / or spray coating) and / or any combination of two or more of these.

[0458] In some non-limiting instances, the deposition of the second electrode 1040 can be performed using an open mask 600600 and / or a maskless deposition process.

[0459] In some non-limiting embodiments, the second electrode 1040 may include multiple such layers and / or coatings. In some non-limiting embodiments, such layers and / or coatings may be different layers and / or coatings stacked on top of each other.

[0460] In some non-limiting embodiments, the second electrode 1040 may include a Yb / Ag bilayer coating. In some non-limiting embodiments, this bilayer coating can be formed by depositing a Yb coating followed by an Ag coating. The thickness of the Ag coating may be greater than the thickness of the Yb coating.

[0461] In some non-limiting examples, the second electrode 1040 may be a multilayer electrode 1040 comprising at least one metal layer and / or at least one oxide layer.

[0462] In some non-limiting examples, the second electrode 1040 may include fullerene and Mg.

[0463] In some non-limiting examples, such a coating can be formed by depositing a fullerene coating followed by depositing a Mg coating. In some non-limiting examples, the fullerene can be dispersed within the Mg coating to form a fullerene-containing Mg alloy coating. Non-limiting examples of such coatings are described in U.S. Patent Application Publication No. 2015 / 0287846, published October 8, 2015, and / or PCT International Application No. PCT / IB2017 / 054970, filed August 15, 2017, and published as WO2018 / 033860 on February 22, 2018.

[0464] drive circuit

[0465] In this disclosure, for the sake of simplicity of description only, the concept of subpixels 3541-3543 (Figure 35) may be referred to herein as subpixel 244x. Similarly, in this disclosure, pixel 1240 ( Figure 12 The concept of (sub)pixel 1240 / 244x can be discussed in conjunction with the concept of at least one of its sub-pixels 244x. For the sake of simplicity of description only, this composite concept is referred to herein as "(sub)pixel 1240 / 244x", and the term is understood to imply one or both of pixel 1240 and / or at least one of its sub-pixels 244x, unless the context otherwise requires.

[0466] Figure 12 This is a circuit diagram of an example driving circuit provided in one or more of the TFT structures 1100 as shown in the backplane 1015. In the illustrated example, the circuit, generally shown as 1200, is an example driving circuit for an active matrix OLED (AMOLED) device 1000 (and / or its (sub)pixels 1240 / 244x) for supplying current to the first electrode 1020 and the second electrode 1040 and controlling photon emission from the device 1000 (and / or its (sub)pixels 1240 / 244x). The illustrated circuit 1200 incorporates multiple p-type top-gate thin-film TFT structures 1100, but circuit 1200 can also incorporate one or more p-type bottom-gate TFT structures 1100, one or more n-type top-gate TFT structures 1100, one or more n-type bottom-gate TFT structures 1100, one or more other TFT structures 1100, and / or any combination thereof, whether or not formed as one or more thin-film layers. In some non-limiting examples, circuit 1200 includes a switching TFT 1210, a driving TFT 1220, and a storage capacitor 1230.

[0467] The (sub)pixels 1240 / 244x of the OLED display 1000 are represented by diodes 1240. The source 1211 of the switching TFT 1210 is coupled to the data (or, in some non-limiting examples, column select) line 1230. The gate 1212 of the switching TFT 1210 is coupled to the gate (or, in some non-limiting examples, row select) line 1231. The drain 1213 of the switching TFT 1210 is coupled to the gate 1222 of the driving TFT 1220.

[0468] The source 1221 of the driving TFT 1220 is coupled to the positive (or negative) terminal of the power supply 1005. The positive terminal of the power supply 1005 is represented by the power line (VDD) 1232.

[0469] The drain 1223 of the driving TFT 1220 is coupled to the anode 1241 of the diode 1240 (representing the (sub)pixel 1240 / 244x of the OLED display 1000), which may be the first electrode 1020 in some non-limiting embodiments, such that the driving TFT 1220 and the diode 1240 (and / or the (sub)pixel 1240 / 244x of the OLED display 1000) are coupled in series between the power line (VDD) 1232 and ground.

[0470] The cathode 1242 of the diode 1240 (representing the (sub)pixel 1240 / 244x of the OLED display 1000, which may be the second electrode 1040 in some non-limiting instances) is represented as a resistor 1250 in circuit 1200.

[0471] Storage capacitor 1230 is coupled at its respective ends to the source 1221 and gate 1222 of driving TFT 1220. Driving TFT 1220 regulates the current flowing through diode 1240 (representing (sub)pixels 1240 / 244x of OLED display 1000) according to the voltage of the charge stored in storage capacitor 1230, causing diode 1240 to output the desired brightness. The voltage of storage capacitor 1230 is set by switching TFT 1210, which is coupled to data line 1230.

[0472] In some non-limiting examples, compensation circuitry 1260 may be provided to compensate for any deviations in transistor properties during the manufacturing process and / or degradation of the switching TFT 1210 and / or driving TFT 1220 over time.

[0473] Semiconducting layer

[0474] In some non-limiting embodiments, at least one semiconductive layer 1030 may include multiple layers 1031, 1033, 1035, 1037, and 1039. In some non-limiting embodiments, any of these layers may be disposed in the form of a thin film or in a stacked configuration. The layers may include, but are not limited to, any one or more of a hole injection layer (HIL) 1031, a hole transport layer (HTL) 1033, an emitter layer (EML) 1035, an electron transport layer (ETL) 1037, and / or an electron injection layer (EIL) 1039. In this disclosure, the term "semiconductive layer" may be used interchangeably with "organic layer" because layers 1031, 1033, 1035, 1037, and 1039 in the OLED device 1000 may, in some non-limiting embodiments, include organic semiconductive materials.

[0475] In some non-limiting embodiments, at least one semiconducting layer 1030 may form a “series” structure comprising a plurality of EMLs 1035. In some non-limiting embodiments, such a series structure may also include at least one charge generating layer (CGL).

[0476] In some non-limiting instances, a variety of techniques may be used to selectively coat, deposit, and / or process thin films comprising layers 1031, 1033, 1035, 1037, and 1039 in a stack constituting at least one semiconductive layer 1030. These techniques include, but are not limited to, evaporation (including, but not limited to, thermal evaporation and / or electron beam evaporation), photolithography, printing (including, but not limited to, inkjet and / or vapor jet printing, roll-to-roll printing, and / or microcontact transfer printing), PVD (including, but not limited to, sputtering), CVD (including, but not limited to, PECVD and / or OVPD), laser annealing, LITI patterning, ALD, coating (including, but not limited to, spin coating, dip coating, line coating, and / or spray coating), and / or any combination of two or more of these.

[0477] Those skilled in the art will readily understand that the structure of the device 1000 can be altered by omitting and / or combining one or more of the semiconductor layers 1031, 1033, 1035, 1037, and 1039.

[0478] Furthermore, any one of the layers 1031, 1033, 1035, 1037, and 1039 of at least one semiconductive layer 1030 may include any number of sublayers. Still further, any one of such layers 1031, 1033, 1035, 1037, 1039 and / or their sublayers may include various mixtures and / or compositional gradients. Additionally, those skilled in the art will understand that device 1000 may include one or more layers containing inorganic and / or organometallic materials, and is not necessarily limited to devices composed solely of organic materials. As a non-limiting example, device 1000 may include one or more quantum dots.

[0479] In some non-limiting instances, HIL 1031 may be formed using a hole injection material that facilitates hole injection through anode 1241.

[0480] In some non-limiting instances, HTL 1033 can be formed using a hole transport material, and in some non-limiting instances, the hole transport material can exhibit a high hole mobility.

[0481] In some non-limiting instances, ETL 1037 can be formed using an electron transport material, which in some non-limiting instances can exhibit high electron mobility.

[0482] In some non-limiting instances, EIL 1039 may be formed using an electron injection material that facilitates electron injection through cathode 1242.

[0483] In some non-limiting examples, EML 1035 can be formed by doping the host material with at least one emitter material. In some non-limiting examples, the emitter material can be a fluorescent emitter, a phosphorescent emitter, a thermally activated delayed fluorescence (TADF) emitter, and / or any combination of these.

[0484] In some non-limiting examples, device 1000 may be an OLED, wherein at least one semiconducting layer 1030 includes an EML 10035 inserted between conductive thin film electrodes 1020, 1040, whereby, when a potential difference is applied across the electrodes, holes are injected into at least one semiconducting layer 1030 through anode 1241, and electrons are injected into at least one semiconducting layer 1030 through cathode 1242.

[0485] Injected holes and electrons tend to migrate through various layers 1031, 1033, 1035, 1037, and 1039 until they reach and meet each other. When holes and electrons are very close, they tend to attract each other due to the Coulomb force, and in some instances, they can combine to form bound electron-hole pairs called excitons. Especially in the case where excitons can be formed in EML 1035, the excitons can decay via a radiative recombination process, in which photons are emitted. The type of radiative recombination process can depend on the spin state of the exciton. In some instances, the exciton can be characterized as having a singlet or triplet spin state. In some non-limiting instances, the radiative decay of a singlet exciton can lead to fluorescence. In some non-limiting instances, the radiative decay of a triplet exciton can lead to phosphorescence.

[0486] Recently, other photon emission mechanisms for OLEDs have been proposed and studied, including but not limited to TADF. In some non-limiting examples, TADF emission occurs by converting a triplet exciton into a single exciton via a reverse intersystem crossing process using thermal energy, followed by radiative decay of the singlet exciton.

[0487] In some non-limiting instances, excitons can decay through a non-radiative process in which photons are not released, particularly in the case where excitons are not formed in EML 1035.

[0488] In this disclosure, the term "internal quantum efficiency" (IQE) of the OLED device 1000 refers to the proportion of all electron-hole pairs generated in the device 1000 that decay through a radiative recombination process and emit photons.

[0489] In this disclosure, the term "external quantum efficiency" (EQE) for the OLED device 1000 refers to the ratio of charge carriers delivered to the device 1000 to the number of photons emitted by the device 1000. In some non-limiting instances, an EQE of 100% indicates that one photon is emitted for each electron injected into the device 1000.

[0490] Those skilled in the art will understand that, in some non-limiting instances, the EQE of device 1000 may be significantly lower than the IQE of the same device 1000. In some non-limiting instances, the difference between the EQE and IQE of a given device 1000 may be attributed to a variety of factors, including, but not limited to, the absorption and reflection of photons caused by various components of device 1000.

[0491] In some non-limiting examples, device 1000 may be an electroluminescent quantum dot device, wherein at least one semiconducting layer 1030 includes an active layer comprising at least one quantum dot. When power supply 1005 can supply current to the first electrode 1020 and the second electrode 1040, photons are emitted from the active layer comprising at least one semiconducting layer 1030 between them.

[0492] Those skilled in the art will readily understand that the structure of device 1000 can be altered by introducing one or more additional layers (not shown) at appropriate locations within the stack of at least one semiconductive layer 1030, including, but not limited to, a hole blocking layer (not shown), an electron blocking layer (not shown), an additional charge transport layer (not shown), and / or an additional charge injection layer (not shown).

[0493] Barrier coating

[0494] In some non-limiting examples, a barrier coating 2050 may be provided to surround and / or encapsulate the first electrode 1020, the second electrode 1040, and at least one semiconductive layer 1030 and / or the various layers of the substrate 10 disposed thereon of the device 1000.

[0495] In some non-limiting examples, a barrier coating 2050 may be provided to prevent the various layers 1020, 1030, 1040 of the device 1000 (including at least one semiconductive layer 1030 and / or cathode 1242) from being exposed to moisture and / or ambient air, since these layers 1020, 1030, 1040 may be prone to oxidation.

[0496] In some non-limiting instances, applying the barrier coating 2050 to a highly uneven surface may increase the likelihood of poor adhesion of the barrier coating 2050 to such a surface.

[0497] In some non-limiting instances, the absence of the barrier coating 2050 and / or improper application of the barrier coating 2050 may cause and / or contribute to defects and / or partial and / or total failure of the device 1000. In some non-limiting instances, improper application of the barrier coating 2050 may reduce the adhesion of the barrier coating 2050 to the device 1000. In some non-limiting instances, poor adhesion of the barrier coating 2050 may increase the likelihood of the barrier coating 2050 peeling off entirely or partially from the device 1000, especially if the device 1000 is bent and / or flexed. In some non-limiting instances, improper application of the barrier coating 2050 may allow cavitation to be trapped between the barrier coating 2050 and the underlying surface of the device 1000 to which the barrier coating 2050 is applied during the application of the barrier coating 2050.

[0498] In some non-limiting examples, the barrier coating 2050 may be a thin-film encapsulation (TFE) layer 2950. Figure 29B And can be selectively applied, deposited and / or processed using a variety of techniques, including but not limited to evaporation (including but not limited to thermal evaporation and / or electron beam evaporation), photolithography, printing (including but not limited to inkjet and / or vapor jet printing, roll-to-roll printing and / or microcontact transfer printing), PVD (including but not limited to sputtering), CVD (including but not limited to PECVD and / or OVPD), laser annealing, LITI patterning, ALD, coating (including but not limited to spin coating, dip coating, line coating and / or spray coating) and / or any two or more of these.

[0499] In some non-limiting examples, the barrier coating 2050 can be provided by laminating a pre-formed barrier film onto the device 1000. In some non-limiting examples, the barrier coating 2050 may comprise a multilayer coating comprising at least one of organic materials, inorganic materials, and / or any combination thereof. In some non-limiting examples, the barrier coating 2050 may further comprise an air-absorbing material and / or a desiccant.

[0500] Horizontal aspect

[0501] In some non-limiting examples, where the OLED device 1000 includes a lighting panel, the entire lateral aspect of the device 1000 may correspond to a single lighting element. Therefore, Figure 10 The substantially flat cross-sectional profile shown may extend substantially along the entire lateral aspect of device 1000, such that photons are emitted from device 1000 substantially along its entire lateral extent. In some non-limiting instances, such a single illumination element may be driven by a single drive circuit 1200 of device 1000.

[0502] In some non-limiting examples, including cases where the OLED device 1000 includes a display module, the lateral aspect of the device 1000 can be subdivided into a plurality of emission regions 2210 of the device 1000, wherein, without limitation... Figure 10 When the cross-sectional aspect of the device structure 1000 in each of the emission regions 2210 shown is excited, it causes photons to be emitted from it.

[0503] Launch area

[0504] In some non-limiting embodiments, the respective emitting regions 2210 of the device 1000 may be arranged in a transverse pattern. In some non-limiting embodiments, the pattern may extend along a first transverse aspect. In some non-limiting embodiments, the pattern may also extend along a second transverse direction, which may be substantially perpendicular to the first transverse direction. In some non-limiting embodiments, the pattern may have multiple elements of such a pattern, each element being characterized by one or more features, including, but not limited to, the wavelength of light emitted by its emitting region 2210, the shape of such emitting region 2210, its size (along one or both of the first and / or second transverse directions), its orientation (relative to one and / or both of the first and / or second transverse directions), and / or its spacing from previous elements in the pattern (relative to one and / or both of the first and / or second transverse directions). In some non-limiting embodiments, the pattern may be repeated in one or both of the first and / or second transverse directions.

[0505] In some non-limiting examples, each individual emission region 2210 of device 1000 is associated with and driven by a corresponding driving circuit 1200 within the backplane 1015 of device 1000, wherein diode 1240 corresponds to the OLED structure of the associated emission region 2210. In some non-limiting examples, including but not limited to, the emission regions 2210 are arranged in a regular pattern extending in both a first (row) lateral direction and a second (column) lateral direction, and the backplane 1015 may contain signal lines 1230, 1231, which may be gate lines (or row select) lines 1231 corresponding to each row of emission regions 2210 extending in the first lateral direction, and signal lines 1230, 1231, which in some non-limiting examples may be data (or column select) lines 1230 corresponding to each column of emission regions 2210 extending in the second lateral direction. In this non-limiting configuration, the signal on the row select line 1231 can activate the corresponding gate 1212 of the switch TFT 1210 electrically coupled thereto, and the signal on the data line 1230 can activate the corresponding source of the switch TFT 1210 electrically coupled thereto, such that the signal on the row select line 1231 / data line 1230 pair will be electrically coupled through the positive terminal of the power supply 1015 (represented by the power supply line VDD 1232) and activate the anode 1241 of the OLED structure of the emission region 2210 associated with the pair, thereby causing photons to be emitted from it, and its cathode 1242 is electrically coupled to the negative terminal of the power supply 1015.

[0506] In some non-limiting examples, each emitting region 2210 of device 1000 corresponds to a single display pixel 1240. In some non-limiting examples, each pixel 1240 emits light of a given wavelength spectrum. In some non-limiting examples, the wavelength spectrum corresponds to, but is not limited to, colors in the visible spectrum.

[0507] In some non-limiting embodiments, each emission region 2210 of the device 1000 corresponds to a sub-pixel 244x of the display pixel 1240. In some non-limiting embodiments, multiple sub-pixels 244x may be combined to form or represent a single display pixel 1240.

[0508] In some non-limiting instances, a single display pixel 1240 may be represented by three sub-pixels 3541-3543. In some non-limiting instances, the three sub-pixels 3541-3543 may be represented as R (red) sub-pixel 3541, G (green) sub-pixel 3542, and / or B (blue) sub-pixel 3543, respectively. In some non-limiting instances, a single display pixel 1240 may be represented by four sub-pixels 244x, wherein three of these sub-pixels 244x may be represented as R, G, and B sub-pixels 3541-3543, and the fourth sub-pixel 244x may be represented as W (white) sub-pixel 244x. In some non-limiting instances, the emission spectrum of light emitted by a given sub-pixel 244x corresponds to the color represented by that sub-pixel 244x. In some non-limiting instances, the wavelength of light does not correspond to such a color, but further processing is performed in a manner obvious to those skilled in the art to transform the wavelength to such a corresponding wavelength.

[0509] Since the wavelengths of sub-pixels 244x of different colors may be different, the optical properties of such sub-pixels 244x may be different, especially if common electrodes 1020, 1040 with substantially uniform thickness profiles are used for sub-pixels 244x of different colors.

[0510] When a common electrode 1020, 1040 with a substantially uniform thickness can be provided in device 1000 as a second electrode 1040, the optical performance of device 1000 may not be easily fine-tuned according to the emission spectrum associated with each (sub)pixel 1240 / 244x. In some non-limiting examples, the second electrode 1040 used in such OLED device 1000 may be a common electrode 1020, 1040 coated with multiple (sub)pixels 1240 / 244x. As a non-limiting example, such common electrodes 1020, 1040 may be relatively thin conductive films with a substantially uniform thickness throughout device 1000. Although efforts have been made in some non-limiting examples to tune the optical microcavity effect associated with the color of each (sub)pixel 1240 / 244x by varying the thickness of the organic layer disposed within the different (sub)pixels 1240 / 244x, in some non-limiting examples, this approach may provide a significant degree of tuning of the optical microcavity effect in at least some cases. Additionally, in some non-limiting instances, this approach may be difficult to implement in OLED display manufacturing environments.

[0511] Therefore, the existence of optical interfaces created by many thin film layers and coatings with different refractive indices, such as in some non-limiting examples, can be used to construct optoelectronic devices including, but not limited to, OLED devices 1000, and can produce optical microcavity effects of different sub-pixels 244x of different colors.

[0512] Some factors that may affect the microcavity effect observed in device 1000 include, but are not limited to, the total path length (in some non-limiting instances, which may correspond to the total thickness of device 1000 from which photons emitted will pass through the device before being coupled out) and the refractive index of various layers and coatings.

[0513] In some non-limiting examples, the thickness of the modulation electrodes 1020, 1040 in the lateral aspect 1310 of the emission region 2210 of the (sub)pixel 1240 / 244x and across said lateral aspect can affect the observable microcavity effect. In some non-limiting examples, this effect can be attributed to a change in the total optical path length.

[0514] In some non-limiting examples, in addition to the change in the total optical path length (in some non-limiting examples), the change in the thickness of electrodes 1020, 1040 can also change the refractive index of the light passing through them. In some non-limiting examples, this can specifically be the case that electrodes 1020, 1040 can be formed by at least one deposition layer 330.

[0515] In some non-limiting instances, the optical properties of device 1000, and / or in some non-limiting instances, the lateral aspect 1310 of the emission region 2210 of (sub)pixels 1240 / 244x, which can be altered by modulating at least one optical microcavity effect, includes, but is not limited to, emission spectrum, intensity (including but not limited to luminous intensity), and / or angular distribution of emitted light, including but not limited to angular dependence of the brightness and / or color shift of emitted light.

[0516] In some non-limiting instances, subpixel 244x is associated with a first group of other subpixels 244x to represent a first display pixel 1240 and also with a second group of other subpixels 244x to represent a second display pixel 1240, such that the first display pixel and the second display pixel 340 may have the same subpixel 244x associated with them.

[0517] Patterns and / or arrangements from subpixels 244x to display pixels 340 continue to evolve. All current and future patterns and / or arrangements are considered to fall within the scope of this disclosure.

[0518] Non-launch area

[0519] In some non-limiting examples, the respective emitting regions 2210 of the device 1000 are substantially surrounded and separated by one or more non-emitting regions 2220 in at least one lateral direction, wherein, without limitation Figure 10 The structure and / or configuration of the illustrated device structure 1000 along its cross-section vary to substantially suppress photons emitted from it. In some non-limiting examples, the non-emission region 2220 includes those regions that are substantially lacking in the transverse direction of the emission region 2210.

[0520] Therefore, as Figure 13 As shown in the cross-sectional view, the lateral topology of each layer of at least one semiconductive layer 1030 can be varied to define at least one emission region 2210 surrounded by at least one non-emission region 2220 (at least in one lateral direction).

[0521] In some non-limiting instances, the emission region 2210 corresponding to a single display (sub)pixel 1240 / 244x can be understood as having a lateral aspect 1310, surrounded in at least one lateral direction by at least one non-emission region 2220 having a lateral aspect 1320.

[0522] Non-limiting examples of embodiments of an apparatus 1000, such as an emitting region 2210 corresponding to a single display (sub)pixel 1240 / 244x of an OLED display 1000, will now be described. While features of such embodiments are shown as specific to the emitting region 2210, those skilled in the art will understand that in some non-limiting examples, more than one emitting region 2210 may encompass common features.

[0523] In some non-limiting embodiments, the first electrode 1020 may be disposed on the exposed layer surface 11 of the device 1000, and in some non-limiting embodiments, within at least a portion of the lateral aspect 1310 of the emission region 2210. In some non-limiting embodiments, at least within the lateral aspect 1310 of the emission region 2210 of the (sub)pixel 1240 / 244x, when depositing the first electrode 1020, the exposed layer surface 11 may include a TFT insulating layer 1180 constituting a driving circuit 1200 corresponding to the emission region 2210 of a single display (sub)pixel 1240 / 244x.

[0524] In some non-limiting embodiments, the TFT insulating layer 1180 may be formed with an opening 1330 extending therethrough to allow the first electrode 1020 to be electrically coupled to one of the TFT electrodes 1140, 1160, and 1170, such as Figure 4 As shown, the electrode includes, but is not limited to, the TFT drain electrode 1170.

[0525] Those skilled in the art will understand that the driving circuit 1200 includes multiple TFT structures 1100, including, but not limited to, switching TFTs 1210, driving TFTs 1220, and / or storage capacitors 1230. Figure 13 For the sake of simplicity, only one TFT structure 1100 is shown, but those skilled in the art will understand that such TFT structure 1100 represents multiple such structures including driving circuit 1200.

[0526] In terms of cross-section, in some non-limiting embodiments, the configuration of each emitting region 2210 may be defined by introducing at least one pixel defining layer (PDL) 1340, which substantially extends through the lateral aspect 1320 of the surrounding non-emitting regions 2220. In some non-limiting embodiments, the PDL 134p may comprise insulating organic and / or inorganic materials.

[0527] In some non-limiting examples, PD 1340 is substantially deposited on TFT insulating layer 1180, but as shown, in some non-limiting examples, PD 1340 may also extend over at least a portion of the deposited first electrode 1020 and / or its outer edge.

[0528] In some non-restrictive instances, such as Figure 13 As shown, the cross-sectional thickness and / or profile of PDL 1340 can be given a substantially valley-shaped configuration to the emission region 2210 of each (sub)pixel 1240 / 244x by increasing the boundary thickness along the lateral aspect 1320 of the surrounding non-emitting region 2220 and the lateral aspect 1310 of the surrounding emitting region 2210 corresponding to the (sub)pixel 1240 / 244x.

[0529] In some non-limiting instances, the profile of PDL 1340 may have a reduced thickness beyond that of such a valley configuration, including, but not limited to, the boundary between the lateral aspect 1320 of the surrounding non-emitting region 2220 and the lateral aspect 1310 of the surrounding emitting region 2210, and in some non-limiting instances, substantially well within the lateral aspect 1320 of such non-emitting region 2220.

[0530] While the PDL 1340 has been generally shown as having a linearly sloping surface to form a valley configuration defining an emission region 2210 surrounded by it, those skilled in the art will understand that in some non-limiting embodiments, at least one of the shape, aspect ratio, thickness, width, and / or configuration of such the PDL 1340 may be modified. As a non-limiting embodiment, the PDL 1340 may be formed with steeper or more gradually sloping portions. In some non-limiting embodiments, such the PDL 1340 may be configured to extend substantially vertically away from the surface on which it is deposited, said surface covering one or more edges of the first electrode 1020. In some non-limiting embodiments, such the PDL 1340 may be configured to deposit at least one semiconductive layer 1030 thereon by solution processing techniques (including, but not limited to, printing, including, but not limited to, inkjet printing).

[0531] In some non-limiting embodiments, at least one semiconductive layer 1030 may be deposited on the exposed layer surface 11 of the device 1000, comprising at least a portion of the lateral aspect 1310 of the emission region 2210 of the (sub)pixels 1240 / 244x. In some non-limiting embodiments, at least within the lateral aspect 1310 of the emission region 2210 of the (sub)pixels 1240 / 244x, such exposed layer surface 11 may include a first electrode 1020 when depositing at least one semiconductive layer 1030 (and / or its layers 1031, 1033, 1035, 1037, 1039).

[0532] In some non-limiting embodiments, at least one semiconductive layer 1030 may also extend beyond the lateral aspect 1310 of the emitting region 2210 of the (sub)pixel 1240 / 244x and at least partially within the lateral aspect 1320 of the surrounding non-emitting region 2220. In some non-limiting embodiments, when depositing at least one semiconductive layer 1030, such exposed layer surfaces 11 of such surrounding non-emitting regions 2220 may include PDL 1340.

[0533] In some non-limiting embodiments, the second electrode 1040 may be disposed on the exposed layer surface 11 of the device 1000, comprising at least a portion of the lateral aspect 1310 of the emission region 2210 of the (sub)pixel 1240 / 244x. In some non-limiting embodiments, at least within the lateral aspect 1310 of the emission region 2210 of the (sub)pixel 1240 / 244x, such exposed layer surface 11 may include at least one semiconductive layer 1030 during the deposition of the second electrode 1020.

[0534] In some non-limiting embodiments, the second electrode 1040 may also extend beyond the lateral aspect 1310 of the emitting region 2210 of the (sub)pixel 1240 / 244x and at least partially within the lateral aspect 1320 of the surrounding non-emitting region 2220. In some non-limiting embodiments, when depositing the second electrode 1040, such exposed layer surface 11 of such surrounding non-emitting region 2220 may include PDL 1340.

[0535] In some non-limiting examples, the second electrode 1040 may extend substantially all or most of the lateral aspect 1320 of the surrounding non-emission region 2220.

[0536] transmittance

[0537] Because the OLED device 1000 emits photons through one or both of the first electrode 1020 (in the case of a bottom-emitting and / or double-sided emitting device) and the substrate 10 and / or the second electrode 1040 (in the case of a top-emitting and / or double-sided emitting device), it is possible to have an objective that one or both of the first electrode 1020 and / or the second electrode 1040 are substantially photon (or light) transmissive (“transmissive”), in some non-limiting instances, at least across a large portion of the lateral aspect 1310 of the emission region 2210 of the device 1000. In this disclosure, such transmissive elements comprising, but not limited to, electrodes 1020, 1040, materials that can form such elements, and / or their properties can include substantially transmissive (“transparent”) and / or, in some non-limiting instances, partially transmissive (“semi-transparent”), in some non-limiting instances, elements, materials, and / or their properties within at least one wavelength range.

[0538] Various mechanisms have been employed to impart transmissive properties to the device 1000, at least across most of the lateral aspect 1310 of its emission region 2210.

[0539] In some non-limiting instances, including but not limited to cases where the device 1000 is a bottom-emitting device and / or a double-sided emitting device, the TFT structure 1100 of the driving circuit 1200 associated with the emission region 2210 of the (sub)pixel 1240 / 244x can be positioned within the lateral aspect 1320 of the surrounding non-emitting region 2220 to avoid affecting the transmission properties of the substrate 10 within the lateral aspect 1310 of the emission region 2210, said TFT structure can at least partially reduce the transmittance of the surrounding substrate 10.

[0540] In some non-limiting instances, when the device 1000 is a double-sided emitting device, with respect to the lateral aspect 1310 of the emitting region 2210 of the (sub)pixel 1240 / 244x, the first of the electrodes 1020, 1040 may be substantially transmissive (including, but not limited to, at least one of the mechanisms disclosed herein), and with respect to the lateral aspect 1310 of adjacent and / or neighboring (sub)pixels 1240 / 244x, the second of the electrodes 1020, 1040 may be substantially transmissive (including, but not limited to, at least one of the mechanisms disclosed herein). Therefore, the lateral aspect 1310 of the first emission region 2210 of the (sub)pixel 1240 / 244x can be made substantially top-emitting, while the lateral aspect 1310 of the second emission region 2210 of the adjacent (sub)pixel 1240 / 244x can be made substantially bottom-emitting, such that a subset of (sub)pixels 1240 / 244x is substantially top-emitting and a subset of (sub)pixels 1240 / 244x is substantially bottom-emitting (in alternating (sub)pixel 1240 / 244x sequences), and only a single electrode 1020, 1040 of each (sub)pixel 1240 / 244x is made substantially transmissive.

[0541] In some non-limiting examples, the mechanism for transmitting the electrodes 1020, 1040 (first electrode 1020 in the case of a bottom-emitting device and / or a double-sided emitting device, and / or second electrode 1040 in the case of a top-emitting device and / or a double-sided emitting device) is to form such electrodes 1020, 1040 having a transmissive thin film.

[0542] In some non-limiting examples, the conductive deposited layer 330 in the thin film may exhibit transmission characteristics, said thin film comprising, but not limited to, thin conductive film layers formed by depositing metals (including, but not limited to, Ag, Al) and / or thin films formed by depositing metal alloys (including, but not limited to, Mg:Ag alloys and / or Yb:Ag alloys). In some non-limiting examples, the alloy may comprise a composition ranging from about 1:9 to 9:1 by volume. In some non-limiting examples, electrodes 1020, 1040 may be formed from a plurality of thin conductive film layers of any combination of deposited layers 330, any one or more of said deposited layers comprising TCO, thin metal films, thin metal alloy films and / or any combination of these.

[0543] In some non-limiting examples, particularly in the case of such thin conductive films, the relatively thin layer thickness can reach essentially tens of nm to help improve transmission quality and favorable optical properties for OLED devices 1000 (including, but not limited to, reduced microcavity effects).

[0544] In some non-limiting examples, reducing the thickness of electrodes 1020 and 1040 to improve transmission quality may be accompanied by an increase in the sheet resistance of electrodes 1020 and 1040.

[0545] In some non-limiting examples, the device 1000, having at least one electrode 1020, 1040 with high sheet resistance, generates a large current-resistance (IR) drop during operation when coupled to the power supply 1005. In some non-limiting examples, this IR drop can be compensated to some extent by increasing the level (VDD) 1332 of the power supply 1005. However, in some non-limiting examples, for at least one (sub)pixel 1240 / 244x, increasing the level of the power supply 1005 to compensate for the IR drop due to the high sheet resistance may require increasing the voltage level supplied to other components to maintain effective operation of the device 1000.

[0546] In some non-limiting examples, in order to reduce the power requirements of device 1000 without significantly affecting the ability of electrodes 1020, 1040 to transmit substantially, (by employing at least one thin film layer of any combination of TCO, thin metal film and / or thin metal alloy film), auxiliary electrode 2150 and / or busbar structure 5050 may be formed on device 1000 to allow current to be delivered more efficiently to the respective emission regions of device 1000, while simultaneously reducing the sheet resistance of transmission electrodes 1020, 1040 and their associated IR drop.

[0547] In some non-limiting examples, the sheet resistance specifications of the common electrodes 1020 and 1040 of the AMOLED display device 1000 can vary according to a number of parameters, including but not limited to the (panel) size of the device 1000 and / or the voltage variation tolerance across the device 1000. In some non-limiting examples, the sheet resistance specification can increase with increasing panel size (i.e., specifying a lower sheet resistance). In some non-limiting examples, the sheet resistance specification can increase with decreasing voltage variation tolerance.

[0548] In some non-limiting examples, sheet resistance specifications can be used to derive example thicknesses for auxiliary electrode 2150 and / or busbar 5050 to conform to such specifications for various panel sizes. In one non-limiting example, assuming an aperture ratio of 0.64 for all display panel sizes, the thicknesses of auxiliary electrode 2150 for various example panel sizes are calculated, such as voltage tolerances of 0.1V and 0.2V in Table 1 below.

[0549] Table 1 shows examples of auxiliary electrode thicknesses for various panel sizes and voltage tolerances.

[0550]

[0551] As a non-limiting example, for a top-emitting device, the second electrode 1040 may be transmissive. On the other hand, in some non-limiting examples, such auxiliary electrodes 2150 and / or busbars 5050 may not be substantially transmissive, but may be electrically coupled to the second electrode 1040 (including, but not limited to, by depositing a conductive deposition layer 330 therebetween) to reduce the effective sheet resistance of the second electrode 1040.

[0552] In some non-limiting examples, such auxiliary electrodes 2150 may be positioned and / or shaped in one or both of the lateral and / or cross-sectional aspects so as not to interfere with the emission of photons from the lateral aspect 1310 of the emission region 2210 of the (sub)pixel 1240 / 244x.

[0553] In some non-limiting examples, the mechanism for fabricating the first electrode 1020 and / or the second electrode 1040 is to pattern-form such electrodes 1020, 1040 across at least a portion of the lateral aspect 1310 of their emission region 2210 (and / or, in some non-limiting examples, across at least a portion of the lateral aspect 1320 surrounding the non-emission region 2220 of the electrode). In some non-limiting examples, such a mechanism may be employed to form auxiliary electrodes 2150 and / or busbars 5050 in a position and / or shape in one or both of the lateral and / or cross-sectional aspects, so as not to interfere with the emission of photons from the lateral aspect 1310 of the emission region 2210 of the (sub)pixel 1240 / 244x, as discussed above.

[0554] In some non-limiting examples, device 1000 may be configured such that it is substantially lacking in the optical path of photons emitted by device 1000. As a non-limiting example, in the lateral aspect 1310 of at least one emission region 2210 corresponding to (sub)pixel 1240 / 244x, at least one of the layers and / or coatings deposited after at least one semiconductive layer 1030 (including, but not limited to, the second electrode 1040, NIC 310, and / or any other layers and / or coatings deposited thereon) may be substantially lacking any conductive oxide material. In some non-limiting examples, the substantial lack of any conductive oxide material may reduce the absorption and / or reflection of light emitted by device 1000. As a non-limiting example, conductive oxide materials (including, but not limited to, ITO and / or IZO) may absorb light in at least the B (blue) region of the visible spectrum, which typically reduces the efficiency and / or performance of device 1000.

[0555] In some non-restrictive instances, combinations of these and / or other mechanisms may be employed.

[0556] Additionally, in some non-limiting examples, besides making at least one or more of the first electrode 1020, the second electrode 1040, the auxiliary electrode 2150, and / or the busbar 5050 substantially transmissive across a large portion of the lateral aspect 1310 of the emission region 2210 corresponding to the (sub)pixel 1240 / 244x of the device 1000, so as to allow photons to be emitted substantially across its lateral aspect 1310, it may be desirable to make at least one lateral aspect 1320 of the lateral aspect 1320 of the surrounding non-emission region 2220 of the device 1000 substantially transmissive in the bottom and top directions, so that the device 1000 is substantially transmissive relative to light incident on its outer surface, such that a large portion of such externally incident light can be transmitted through the device 1000 except for the emission of photons generated inside the device 1000 as disclosed herein (top emission, bottom emission, and / or bi-lateral emission).

[0557] Patterning

[0558] As a result of the foregoing, a possible objective is to selectively deposit device features, patterned on the exposed surface 11 of the front panel 1010 layer of the device 1000, on the lateral aspect 1310 of the emission region 2210 across (sub)pixels 1240 / 244x and / or the lateral aspect 1320 of the non-emission region 2220 surrounding the emission region 2210, including, but not limited to, at least one of the following: a first electrode 1020, a second electrode 1040, an auxiliary electrode 2150 and / or a busbar 5050 and / or a conductive element electrically coupled thereto. In some non-limiting embodiments, the first electrode 1020, the second electrode 1040, the auxiliary electrode 2150 and / or the busbar 5050 may be deposited in at least one of a plurality of deposition layers 330.

[0559] Figure 14 An example cross-sectional view of a device 1400 is shown that is substantially similar to device 1000, but further includes a plurality of raised PDLs 1340 across a lateral aspect 1320 of a non-emitting region 2220, the non-emitting region surrounding a lateral aspect 1310 of an emitting region 2210 corresponding to (sub)pixels 1240 / 244x.

[0560] When the deposition layer 330 is deposited, in some non-limiting instances, an open mask 600 and / or a maskless deposition process are used to deposit the deposition layer 330 across the lateral aspect 1310 of the emission region 2210 corresponding to the (sub)pixel 1240 / 244x to form the second electrode 1040 thereon, and also across the lateral aspect 1320 of the non-emission region 2220 surrounding them to form the deposition layer 330 on top of the PDL 1340. To ensure that each (segment) of the second electrode 1040 is not electrically coupled to any conductive region in at least one conductive deposition layer region 330, the thickness of the PDL 1340 is greater than the thickness of the second electrode 1040. In some non-limiting instances, as shown, the PDL 1340 may be provided with an undercut profile to further reduce the likelihood that any (segment) of the second electrode 1040 will be electrically coupled to any conductive deposition layer region in at least one conductive region 330.

[0561] In some non-limiting instances, given the highly uneven surface topography of device 1400, applying barrier coating 2050 over device 1400 may result in poor adhesion of barrier coating 2050 to device 1400.

[0562] In some non-limiting instances, an objective may be to tune the optical microcavity effect associated with sub-pixels 244x of different colors (and / or wavelengths) by varying the thickness of at least one semiconductive layer 1030 (and / or a layer thereof) across the lateral aspect 1310 of the emission region 2210 of the sub-pixel 244x corresponding to one color, relative to the lateral aspect 1310 of the emission region 2210 of the sub-pixel 244x corresponding to another color. In some non-limiting instances, patterning using FMM 415 may not provide the precision required to provide such optical microcavity tuning effects in at least some cases and / or in some non-limiting instances, within the manufacturing environment of the OLED display 1000.

[0563] Figure 15A A stage 1501 of process 1500 is described, wherein once the NIC 310 has been deposited on the first portion 301 of the exposed surface 11 of the underlying material (substrate 10 in the figure), the NPC 520 can be deposited on the NPC portion 1503 of the exposed surface 11 of the NIC 310 disposed on the substrate 10 in the first portion 301. In the figure, as a non-limiting example, the NPC portion 1503 may extend entirely within the first portion 301.

[0564] In stage 1501, a certain amount of NPC material 511 is heated under vacuum to evaporate and / or sublimate 1522 the NPC material 511. In some non-limiting examples, the NPC material 511 comprises entirely and / or substantially the material used to form NPC 520. The evaporated NPC material 1522 is guided through chamber 40, contained in the direction indicated by arrow 1510, toward the exposed layer surface 11 of the first part 301 and the NPC part 1503. When the evaporated NPC material 1522 is incident on the NPC part 1503 of the exposed layer surface 11, NPC 520 can be formed thereon.

[0565] In some non-limiting instances, the deposition of NPC material 511 may be performed using an open mask 600 and / or a maskless deposition technique, such that NPC 520 may be formed substantially across the entire exposed layer surface 11 of the underlying material (which in the figure may be the NIC 310 through the first part 301 and / or the substrate 10 through the second part 302) to produce a treated surface (of NPC 520).

[0566] In some non-limiting instances, as shown in the figure of stage 1501, NPC 520 can be selectively deposited only onto a portion of the exposed layer surface 11 (in the figure, NIC 310's) (NPC portion 1503 in the illustrated example) by inserting a shadow mask 415 between NPC material 511 and exposed layer surface 11. In some non-limiting instances, the shadow mask may be an FMM. The shadow mask 415 has at least one aperture 1526 extending through it, such that a portion of the evaporated NPC material 1522 passes through the aperture 1526 and is incident onto the exposed layer surface 11 (in the figure, as a non-limiting example, only NIC 310 within NPC portion 1503) to form NPC 520. If the evaporated NPC material 1522 does not pass through the aperture 1526 but is incident onto the surface 1527 of the shadow mask 415, it is prevented from being deposited on the exposed layer surface 11 to form NPC 520. The portion 1502 of the exposed layer surface 11 located outside the NPC section 1503 is therefore essentially devoid of NPC 520. In some non-limiting instances (not shown), evaporated NPC material 1522 incident on the shadow mask 415 may be deposited on its surface 1527.

[0567] Although the exposed surface 11 of NIC 310 in the first part 301 exhibits a relatively low initial adhesion probability S0 to the deposited layer 330, this may not necessarily be the case for NPC 520 in some non-limiting instances, such that NPC 520 may still selectively deposit on the exposed surface 11 of (NIC 310 in the figure) in NPC part 1503.

[0568] Therefore, a patterned surface is produced when the NPC 520 deposition is completed.

[0569] Figure 15B A stage 1504 of process 1500 is described, wherein once NIC 310 has been deposited on the first portion 301 of the exposed layer surface 11 of the underlying material (in the figure, substrate 10) and NPC 520 has been deposited on the NPC portion 1503 of the exposed layer surface 11 (in the figure, of NIC 310), a deposition layer 330 can be deposited on the NPC portion 1503 and the second portion 302 of the exposed layer surface 11 (in the figure, substrate 10).

[0570] In stage 1504, a certain amount of deposited material 531 is heated under vacuum to evaporate and / or sublimate 532 of the deposited material 531. In some non-limiting examples, the deposited material 531 comprises entirely and / or substantially the material used to form the deposited layer 330. The evaporated deposited material 532 is guided through chamber 40, contained in the direction indicated by arrow 1520, toward the exposed layer surface 11 of the first part 301, the NPC part 1503, and the second part 302. When the evaporated deposited material 532 is incident on the NPC part 1503 (of the NPC 520) and the second part 302 (of the substrate 10) of the exposed layer surface 11 (i.e., except on the exposed layer surface 11 of the NIC 310), the deposited layer 330 can be formed thereon.

[0571] In some non-limiting instances, such as those shown in the figure of phase 1504, the deposition of the deposition layer 330 may be performed using an open mask 600 and / or a maskless deposition process, such that the deposition layer 330 may be formed substantially across the exposed surface 11 of the underlying material (except in the case where the underlying material is NIC 310) to produce a treated surface (of the deposition layer 330).

[0572] In fact, such as Figure 15B As shown, the evaporated deposited material 532 is incident on the exposed layer surface 11 of the NIC 310 across the first part 301 located outside the NPC part 1503, the exposed layer surface 11 of the NPC 520 across the NPC part 1503, and the exposed layer surface 11 of the substrate 10 across the second part 302 which is substantially lacking the NIC 310.

[0573] Because the exposed surface 11 of the NIC 310 in the first part 301, located outside the NPC part 1503, exhibits a relatively low initial adhesion probability S0 to the deposited layer 330 compared to the exposed surface 11 of the substrate 10 in the second part 302, and / or because the exposed surface 11 of the NPC 520 in the NPC part 1503 exhibits a relatively high initial adhesion probability S0 to the deposited layer 330 compared to both the exposed surface 11 of the NIC 310 in the first part 301, located outside the NPC part 1503, and the exposed surface 11 of the substrate 10 in the second part 302, the deposited layer 330 is essentially deposited only selectively on the exposed surface 11 of the substrate 10 in the NPC part 1503 and the second part 302, which are essentially lacking in the NIC 310. In contrast, the evaporated deposited material 532 incident on the exposed surface 11 of the NIC 310, which spans the first part 301 outside the NPC part 1503, tends not to deposit, as shown in Figure (1523), and the exposed surface 11 of the NIC 310, which spans the first part 301 outside the NPC part 1503, is essentially lacking a deposited layer 330.

[0574] Therefore, a patterned surface is generated when the deposition layer 330 is completed.

[0575] Figures 16A-16C A non-limiting example of an evaporation process is shown, generally illustrated as 2000, in chamber 40, for selectively depositing a deposition layer 330 onto the exposed surface 11 of the underlying material, in sections 302, 1502. Figure 16C )superior.

[0576] Figure 16A A stage 1601 of process 1600 is described, in which a certain amount of NPC material 511 is heated under vacuum to evaporate and / or sublimate 1522 NPC material 511. Figure 16A and Figure 4 The same applies, wherein patterned coating 410 is NPC 520, but with additional annotations NPC part 1503 and supplementary part 1502.

[0577] In some non-limiting instances, the NPC material 511 comprises entirely and / or substantially the material used to form the NPC 520. The evaporated NPC material 1522 is guided through the chamber 40, contained in the direction indicated by arrow 41, toward the exposed layer surface 11 (substrate 10 in the figure).

[0578] In some non-limiting instances, the deposition of NPC material 511 can be performed using an open mask 600 and / or a maskless deposition process, such that NPC 520 can be formed substantially across the entire exposed surface 11 of the underlying material (substrate 10 in the figure) to produce a treated surface (of NPC 520).

[0579] In some non-limiting instances, as shown in the figure of stage 1601, NPC 520 can be selectively deposited only onto a portion of the exposed layer surface 11 (NPC portion 1503 in the illustrated example) by inserting a shadow mask 415 between the NPC material 511 and the exposed layer surface 11. In some non-limiting instances, the shadow mask may be an FMM. The shadow mask 415 has at least one hole 416 extending through it, such that a portion of the evaporated NPC material 1522 passes through the hole 416 and is incident onto the exposed layer surface 11 to form NPC 520 in the NPC portion 1503. If the evaporated NPC material 1522 does not pass through the hole 416 but is incident onto the surface 417 of the shadow mask 415, it is prevented from being deposited on the exposed layer surface 11 to form NPC 520 within a portion 1502 of the exposed layer surface 11 located outside the NPC portion 1503. Thus, portion 1502 is substantially devoid of NPC 520. In some non-limiting instances (not shown), NPC material 511 incident on the shadow mask 415 may be deposited on its surface 417.

[0580] When the evaporated NPC material 1522 is incident on the surface 11 of the exposed layer (i.e., in the NPC section 1503), NPC 520 can be formed thereon.

[0581] Therefore, a patterned surface is produced when the NPC 520 deposition is completed.

[0582] Figure 16 illustrates stage 1602 of process 1600, where once the NPC 520 has been deposited on the NPC portion 1503 of the exposed layer surface 11 of the underlying material (substrate 10 in the figure), the NIC 310 can be deposited on the first portion 301 of the exposed layer surface 11. In the figure, as a non-limiting example, the first portion 301 may extend entirely within the NPC portion 1503. Therefore, in the figure, as a non-limiting example, portion 1502 includes the portion of the exposed layer surface 11 located outside the first portion 301.

[0583] In stage 1602, a certain amount of NIC material 511 is heated under vacuum to evaporate and / or sublimate 1612 NIC material 511. In some non-limiting examples, NIC material 511 comprises entirely and / or substantially the material used to form NIC 310. The evaporated NIC material 1612 is guided through chamber 40, contained in the exposed layer surface 11 of the first portion 301, which may extend beyond the first portion 301 to the NPC portion 1503 and portion 1502, in the direction indicated by arrow 1620. When the evaporated NIC material 1612 is incident on the first portion 301 of the exposed layer surface 11, NIC 310 can be formed thereon.

[0584] In some non-limiting instances, the deposition of NIC material 511 may be performed using an open mask 600 and / or a maskless deposition process, such that NIC 310 may be formed substantially across the entire exposed surface 11 of the underlying material to produce a treated surface (of NIC 310).

[0585] In some non-limiting instances, as shown in the figure of stage 1602, NIC 310 can be selectively deposited only onto a portion of the exposed layer surface 11 (in the figure, the first portion 301 of NPC 520) by inserting a shadow mask 415 between NIC material 511 and the exposed layer surface 11. In some non-limiting instances, the shadow mask may be an FMM. The shadow mask 415 has at least one aperture 416 extending through it, such that a portion of the evaporated NIC material 1612 passes through the aperture 416 and is incident onto the exposed layer surface 11 (in the figure, as a non-limiting example, NPC 520) to form NIC 310. If the evaporated NIC material 1612 does not pass through the aperture 416 but is incident onto the surface 417 of the shadow mask 415, it is prevented from being placed on the exposed layer surface 11 to form NIC 310 within the second portion 302 outside the first portion 301. The second part 302 of the exposed layer surface 11, located outside the first part 301, is therefore essentially devoid of NIC 310. In some non-limiting examples (not shown), evaporated NIC material 1612 incident on the shadow mask 415 may be deposited on its surface 417.

[0586] Although the exposed surface 11 of NPC 520 in NPC section 1503 exhibits a relatively high initial adhesion probability S0 for the deposition of the deposition layer 330, this may not be the case for NIC 310 in some non-limiting instances. Even so, in some non-limiting instances, the initial adhesion probability S0 for the deposition of NIC 310 may allow NIC 310 to still selectively deposit on the exposed surface 11 of the first section 301 (NPC 520 in the figure).

[0587] Therefore, a patterned surface is produced when the NIC 310 deposition is completed.

[0588] Figure 16C A stage 1603 of process 1600 is described, wherein once NIC 310 has been deposited on the first portion 301 of the exposed layer surface 11 (NPC 520 in the figure), a deposition layer 330 can be deposited on the second portion 302 of the exposed layer surface 11 (in the figure, across the portion 1502 of the substrate 10 outside the NPC portion 1503, and across the NPC 520 of the NPC portion 1503 outside the first portion 301). In stage 1603, a quantity of deposited material 531 is heated under vacuum to evaporate and / or sublimate 532 of the deposited material 531. In some non-limiting examples, the deposited material 531 comprises entirely and / or substantially the material used to form the deposition layer 330. The evaporated deposited material 532 is guided through chamber 40, contained in the direction indicated by arrow 1630, toward the first portion 301, the NPC portion 1503, and the exposed layer surface 11 of the portion 1502 outside the NPC portion 1503. When the evaporated deposited material 532 is incident on the NPC portion 1503 of the exposed layer surface 11 (NPC 520) outside the first portion 301 and the portion 1502 of the exposed layer surface 11 (substrate 10) outside the NPC portion 1503 (i.e., on the second portion 302 except on the exposed layer surface 11 of NIC 310), a deposited layer 330 is formed thereon.

[0589] In some non-limiting instances, such as those shown in the figure of phase 1603, the deposition of the deposition layer 330 may be performed using an open mask 600 and / or a maskless deposition process, such that the deposition layer 330 may be formed substantially across the exposed surface 11 of the underlying material (except in the case where the underlying material is NIC 310) to produce a treated surface (of the deposition layer 330).

[0590] In fact, such as Figure 16C As shown, the evaporated deposited material 532 is incident on the exposed layer surface 11 of the NIC 310 spanning the first part 301 within the NPC part 1503, the exposed layer surface 11 of the NPC 520 spanning the NPC part 1503 outside the first part 301, and the exposed layer surface 11 of the substrate 10 spanning the part 1502 outside the NPC part 1503.

[0591] Because the exposed surface 11 of the NIC 310 in the first part 301 exhibits a relatively low initial adhesion probability S0 to the deposited layer 330 compared to the exposed surface 11 of the substrate 10 in the second part 302 outside the NPC part 1503, and / or because the exposed surface 11 of the NPC 520 in the NPC part 1503 outside the first part 301 exhibits a relatively high initial adhesion probability S0 to the deposited layer 330 compared to both the exposed surface 11 of the NIC 310 in the first part 301 and the exposed surface 11 of the substrate 10 in the part 1502 outside the NPC part 1503, the deposited layer 330 is essentially deposited only selectively on the exposed surface 11 of the substrate 10 in the NPC part 1503 outside the first part 301 and the part 1502 outside the NPC part 1503, which are essentially lacking in the NIC 310. In contrast, the evaporated deposited material 532 incident on the exposed surface 11 of the NIC 310 across the first part 301 tends not to deposit, as shown in Figure (1233), and the exposed surface 11 of the NIC 310 across the first part 301 is essentially devoid of a deposited layer 330.

[0592] Therefore, a patterned surface is generated when the deposition layer 330 is completed.

[0593] In some non-limiting instances, the initial deposition rate of the evaporated deposited material 532 on the exposed layer surface 11 in the second part 302 may exceed that of the initial deposition rate of the evaporated deposited material 532 on the exposed layer surface 11 of the NIC 310 in the first part 301 by approximately: 200 times, 550 times, 900 times, 1,000 times, 1,500 times, 1,900 times, or 2,000 times.

[0594] Figures 17A-17C illustrate non-limiting examples of a printing process, generally shown at 1700, for selectively depositing a selective coating 410 (in some non-limiting examples, it may be NIC 310 or NPC 520) onto an exposed layer surface 11 of an underlying material (substrate 10 in the figures, for illustrative purposes only).

[0595] Figure 17A A stage of process 1700 is described, wherein a mold 1710 having protrusions 1711 thereon may have a selective coating 410 disposed on the exposed surface 11 of the protrusions 1711. Those skilled in the art will understand that the selective coating 410 may be deposited and / or deposited on the protrusion surface 11 using a variety of suitable mechanisms.

[0596] Figure 17BThe process 1700 is described in a stage where the impression 1710 is brought close to the exposed layer surface 11 1701, such that the selective coating 410 contacts and adheres to the exposed layer surface 11.

[0597] Figure 17C The process 1700 is described in a stage where the impression 1710 is removed from the exposed layer surface 11 1703, leaving a selective coating 410 deposited on the exposed layer surface 11.

[0598] Selective deposition of patterned electrodes

[0599] Without the use of FMM 415 in the high-temperature deposition process of layer 330, the foregoing can be combined to achieve selective deposition of at least one deposition layer 330 to form patterned electrodes 1020, 1040, 2150 and / or busbar 5050. In some non-limiting embodiments, the patterned electrodes may be a second electrode 1040 and / or an auxiliary electrode 2150. In some non-limiting embodiments, such patterning may allow and / or enhance the transmittance of device 1000.

[0600] Figure 18 An example patterned electrode 1800 is shown in a plan view, in which a second electrode 1040 is adapted to an example version 1900 of the device 1000. Figure 19 Electrode 1800 may be formed in a pattern 1810 comprising a single continuous structure having or defining a plurality of patterned holes 1820, wherein the holes 1820 correspond to the area of ​​device 1000 without cathode 1242.

[0601] In the figure, as a non-limiting example, pattern 1810 is arranged across the entire lateral range of device 1900 without distinction between the lateral aspect 910 of the emitting region 2210 corresponding to (sub)pixels 1240 / 244x and the lateral aspect 920 of the non-emitting region 2220 surrounding such emitting region 2210. Thus, the illustrated example can correspond to device 1900 which is substantially transmissive with respect to light incident on its outer surface, such that a large portion of such externally incident light can be transmitted through device 1900, except for the emission (top emission, bottom emission, and / or double-sided emission) of photons generated within device 1900 as disclosed herein.

[0602] The transmittance of device 1900 can be adjusted and / or modified by changing the pattern 1810 used, including but not limited to the average size of the apertures 1820 and / or the spacing and / or density of the apertures 1820.

[0603] Now go to Figure 19 It shows along Figure 18The figure shows a cross-sectional view of device 1900 taken by line 19-19. In the figure, device 1900 is shown as including a substrate 10, a first electrode 1020, and at least one semiconductive layer 1030. In some non-limiting embodiments, an NPC 520 is disposed on substantially all of the exposed surface 11 of the at least one semiconductive layer 1030. In some non-limiting embodiments, the NPC 520 may be omitted.

[0604] The NIC 310 is selectively arranged according to a pattern that substantially corresponds to the pattern 1810 on the exposed surface 11 of the underlying material, as shown in the figure. The underlying material is NPC 520 (but in some non-limiting instances, if NPC 520 has been omitted, the underlying material may be at least one semiconductive layer 1030).

[0605] A deposition layer 330 suitable for forming a patterned electrode 1800 (second electrode 1040 in the figure) is disposed on substantially all exposed surface 11 of the underlayer material using an open mask 600 and / or maskless deposition processes, neither of which employs any FMM 415 during the high-temperature deposition process of the deposition layer 330. The underlayer material includes regions of NIC 310 disposed in pattern 1810 and regions of NPC 520 in pattern 1810, where NIC 310 has not yet been deposited. In some non-limiting instances, the regions of NIC 310 may substantially correspond to the first portion 301 of the hole 1820 shown in pattern 1810.

[0606] Due to the nucleation inhibition properties of those regions of the pattern 1810 (corresponding to the borehole 1820) where the NIC 310 is placed, the deposition layer 330 placed on such regions tends not to be retained, resulting in a selective deposition pattern of the deposition layer 330 that substantially corresponds to the rest of the pattern 1810, thus causing those regions in the first part 301 of the pattern 1810 corresponding to the borehole 1820 to be substantially lacking in the deposition layer 330.

[0607] In other words, the deposition layer 330 that forms the cathode 1242 is deposited essentially only selectively on the second part 302, which includes those areas surrounding but not occupying the NPC 520 of the hole 1820 in the pattern 1810.

[0608] Figure 20A A schematic diagram of multiple patterns 2020, 2040 showing electrodes 1020, 1040, 2150 is shown in a plan view.

[0609] In some non-limiting embodiments, the first pattern 1620 includes a plurality of elongated, spaced-apart regions extending in a first lateral direction. In some non-limiting embodiments, the first pattern 1620 may include a plurality of first electrodes 1020. In some non-limiting embodiments, the plurality of regions including the first pattern 1620 may be electrically coupled.

[0610] In some non-limiting embodiments, the second pattern 2040 includes a plurality of elongated, spaced-apart regions extending in a second lateral direction. In some non-limiting embodiments, the second lateral direction may be substantially perpendicular to the first lateral direction. In some non-limiting embodiments, the second pattern 2040 may include a plurality of second electrodes 1040. In some non-limiting embodiments, the plurality of regions including the second pattern 2040 may be electrically coupled.

[0611] In some non-limiting instances, the first pattern 1620 and the second pattern 2040 may form part of the example version, generally in accordance with the 2000 of the device 1000. Figure 20C As shown, it may include multiple PMOLED elements.

[0612] In some non-limiting examples, a lateral aspect 1310 is formed corresponding to the emission region 3010 of (sub)pixels 1240 / 244x, wherein the first pattern 1620 overlaps with the second pattern 2040. In some non-limiting examples, the lateral aspect 1320 of the non-emission region 2220 corresponds to any lateral aspect other than the lateral aspect 1310.

[0613] In some non-limiting embodiments, a first terminal (which may be the positive terminal of power supply 1005 in some non-limiting embodiments) is electrically coupled to at least one electrode 1020, 1040, 2150 of the first pattern 1620. In some non-limiting embodiments, the first terminal is coupled to at least one electrode 1020, 1040, 2150 of the first pattern 1620 via at least one drive circuit 1200. In some non-limiting embodiments, a second terminal (which may be the negative terminal of power supply 1005 in some non-limiting embodiments) is electrically coupled to at least one electrode 1020, 1040, 2150 of the second pattern 2040. In some non-limiting embodiments, the second terminal is coupled to at least one electrode 1020, 1040, 2150 of the second pattern 1740 via at least one drive circuit 1200.

[0614] Now go to Figure 20BFigure A shows a cross-sectional view of the device 2000 at deposition stage 2000b, taken along line 20B-20B in Figure A. In the figure, the device 2000 at stage 2000b is shown as including the substrate 10. In some non-limiting embodiments, the NPC 520 is disposed on the exposed layer surface 11 of the substrate 10. In some non-limiting embodiments, the NPC 520 may be omitted.

[0615] The NIC 310 is selectively disposed on the exposed surface 11 of the underlying material according to the inverse pattern corresponding to the first pattern 1620, as shown in the figure, wherein the underlying material is NPC 520.

[0616] A deposition layer 330 of a first pattern 1620 suitable for forming electrodes 1020, 1040, 2150 (first electrode 1020 in the figure) is disposed on substantially all exposed surface 11 of the underlayer material using an open mask 600 and / or maskless deposition processes, wherein no FMM 415 is employed during the high-temperature deposition process of the deposition layer 330. The underlayer material includes regions of NIC 310 arranged in reverse of the first pattern 1620 and regions of NPC 520 arranged in the first pattern 1620, wherein NIC 310 has not yet been deposited. In some non-limiting embodiments, the regions of NPC 520 may substantially correspond to elongated, spaced regions of the first pattern 1620, while the regions of NIC 310 may substantially correspond to a first portion including the gaps therebetween.

[0617] Due to the nucleation inhibition properties of those regions where the first pattern 1620 of the NIC 310 is disposed (corresponding to the gaps therebetween), the deposited layer 330 disposed on such regions tends not to be retained, resulting in a selective deposition pattern of the deposited layer 330 that substantially corresponds to the elongated, spaced regions of the first pattern 1620, thereby causing the first portion 301 including the gaps therebetween to substantially lack the sealing coating 340 of the deposited layer 330.

[0618] In other words, the deposition layer 330 of the first pattern 1620 forming electrodes 1020, 1040, 2150 is deposited substantially selectively only on the second portion 302 of those regions including NPC 520 (or, in some non-limiting instances, if NPC 520 is omitted, the substrate 10), which defines elongated, spaced regions of the first pattern 1620.

[0619] Now go to Figure 20C It shows along Figure 2 The cross-sectional view 2000c of device 2000 is taken by line 20C-20C in -A. In the figure, device 2000 is shown as including substrate 10; as Figure 20BThe electrode 1020 shown has a first pattern 1620 and at least one semiconducting layer 1030.

[0620] In some non-limiting instances, at least one semiconducting layer 1030 may be provided as a common layer across substantially all lateral aspects of the device 2000.

[0621] In some non-limiting embodiments, the NPC 520 is disposed on substantially all of the exposed surface 11 of at least one semiconductive layer 1030. In some non-limiting embodiments, the NPC 520 may be omitted.

[0622] The NIC 310 is selectively disposed according to a pattern that substantially corresponds to the second pattern 2040 on the exposed surface 11 of the underlying material, as shown in the figure. The underlying material is NPC 520 (but in some non-limiting instances, if NPC 520 has been omitted, the underlying material may be at least one semiconductive layer 1030).

[0623] A deposition layer 330 of a second pattern 2040 suitable for forming electrodes 1020, 1040, 2150 (second electrode 1040 in the figure) is disposed on substantially all exposed surface 11 of the underlayer material using an open mask 600 and / or maskless deposition processes, wherein no FMM 415 is employed during the high-temperature deposition process of the deposition layer 330. The underlayer material includes regions of NIC 310 arranged in reverse phase of the second pattern 2040 and regions of NPC 520 in the second pattern 2040, wherein NIC 310 has not yet been deposited. In some non-limiting embodiments, the regions of NPC 520 may substantially correspond to a first portion 301 comprising elongated, spaced regions of the second pattern 2040, while the regions of NIC 310 may substantially correspond to the gaps therebetween.

[0624] Due to the nucleation inhibition properties of those regions where the second pattern 2040 of the NIC 310 is disposed (corresponding to the gaps therebetween), the deposited layer 330 disposed on such regions tends not to be retained, resulting in a selective deposition pattern of the deposited layer 330 that substantially corresponds to the elongated, spaced regions of the second pattern 2040, thereby causing the first portion 301 including the gaps therebetween to substantially lack the sealing coating 340 of the deposited layer 330.

[0625] In other words, the deposition layer 330 that forms the second pattern 2040 of electrodes 1020, 1040, 2150 is deposited substantially selectively only on the second portion 302, which includes the regions of NPC 520, defining elongated, spaced regions of the second pattern 2040.

[0626] In some non-limiting examples, the thickness of the NIC 310 and the subsequently deposited deposition layer 330 for forming one or both of the first pattern 1620 and / or the second pattern 2040 of electrodes 1020, 1040, 2150 can vary according to a variety of parameters, including but not limited to desired application and desired performance characteristics. In some non-limiting examples, the thickness of the NIC 310 can be comparable to and / or significantly less than the thickness of the subsequently deposited deposition layer 330. Using a relatively thin NIC 310 to achieve selective patterning of the subsequently deposited deposition layer 330 may be suitable for providing a flexible device 1000, including but not limited to a PMOLED device. In some non-limiting examples, the relatively thin NIC 310 can provide a relatively flat surface on which a barrier coating 2050 can be deposited. In some non-limiting examples, providing such a relatively flat surface for applying the barrier coating 2050 can increase the adhesion of the barrier coating 2050 to such a surface.

[0627] At least one pattern of the first pattern 1620 of electrodes 1020, 1040, 2150 and at least one pattern of the second pattern 2040 of electrodes 1020, 1040, 2150 may be directly and / or, in some non-limiting instances, electrically coupled to power supply 1005 via their respective drive circuits 1200 to control photon emission from the lateral aspect 1310 of the emission region 3010 corresponding to the (sub)pixel 1240 / 244x.

[0628] Those skilled in the art should understand that, in some non-limiting instances, Figures 20A-20C The process of forming the second electrode 1040 according to the second pattern 2040 shown can be used in a similar manner to form the auxiliary electrode 2150 for the device 2000. In some non-limiting embodiments, the second electrode 1040 may include a common electrode, and the auxiliary electrode 2150 may be deposited in the second pattern 2040 (in some non-limiting embodiments, above the second electrode 1040, or in some non-limiting embodiments, below the second electrode) and electrically coupled thereto. In some non-limiting embodiments, the second pattern 2040 for such an auxiliary electrode 2150 may be such that elongated, spaced regions of the second pattern 2040 are substantially located within the lateral aspect 1320 of the non-emitting region 3020 surrounding the lateral aspect 1310 of the emitting region 3010 corresponding to the (sub)pixel 1240 / 244x. In some non-limiting examples, the second pattern 2040 for such auxiliary electrodes 2150 may be such that the elongated, spaced regions of the second pattern 2040 are substantially located within the lateral aspect 1310 of the emission region 3010 corresponding to the (sub)pixels 1240 / 244x and / or the lateral aspect 1320 of the non-emission region 3020 surrounding them.

[0629] Figure 21 An example cross-sectional view of an example version 2100 of the device 1000 is shown. The example version is substantially similar to the device but further includes at least one auxiliary electrode 2150, which is arranged in the pattern described above and electrically coupled to a second electrode 1040 (not shown).

[0630] The auxiliary electrode 2150 is conductive. In some non-limiting examples, the auxiliary electrode 2150 may be formed of at least one metal and / or metal oxide. Non-limiting examples of such metal include Cu, Al, molybdenum (Mo), or Ag. As a non-limiting example, the auxiliary electrode 2150 may include a multilayer metal structure, including but not limited to a multilayer metal structure formed of Mo / Al / Mo. Non-limiting examples of such metal oxide include ITO, ZnO, IZO, or other oxides containing In or Zn. In some non-limiting examples, the auxiliary electrode 2150 may include a multilayer structure formed of a combination of at least one metal and at least one metal oxide, said combination including but not limited to Ag / ITO, Mo / ITO, ITO / Ag / ITO, or ITO / Mo / ITO. In some non-limiting examples, the auxiliary electrode 2150 includes a variety of such conductive materials.

[0631] The device 2100 is shown as including a substrate 10, a first electrode 1020 and at least one semiconducting layer 1030.

[0632] In some non-limiting embodiments, the NPC 520 is disposed on substantially all of the exposed surface 11 of at least one semiconductive layer 1030. In some non-limiting embodiments, the NPC 520 may be omitted.

[0633] The second electrode 1040 is disposed on substantially all exposed surface 11 of the NPC 520 (or at least one semiconductive layer 1030, if the NPC 520 has been omitted).

[0634] In some non-limiting embodiments, particularly in the top-emitting device 2100, the second electrode 1040 may be formed by depositing a relatively thin conductive film layer (not shown) to reduce optical interference (including, but not limited to, attenuation, reflection, and / or diffusion) associated with the presence of the second electrode 1040. In some non-limiting embodiments, as discussed elsewhere, the reduced thickness of the second electrode 1040 may generally increase the sheet resistance of the second electrode 1040, which in some non-limiting embodiments may reduce the performance and / or efficiency of the device 2100. By providing an auxiliary electrode 2150 electrically coupled to the second electrode 1040, in some non-limiting embodiments, the sheet resistance may be reduced and thus the IR drop associated with the second electrode 1040 may be reduced.

[0635] In some non-limiting examples, device 2100 may be a bottom-emitting and / or double-sided emitting device 2100. In such examples, the second electrode 1040 may be formed as a relatively thick conductive layer without substantially affecting the optical properties of such device 2100. However, even in such cases, as a non-limiting example, the second electrode 1040 may still be formed as a relatively thin conductive film layer (not shown), such that device 2100 may be substantially transmissive with respect to light incident on its outer surface, such that most of such externally incident light can be transmitted through device 2100, except for the emission of photons generated within device 2100 as disclosed herein.

[0636] The NIC 310 is selectively disposed on the exposed surface 11 of the underlying material, as shown in the figure, where the underlying material is NPC 520. In some non-limiting embodiments, as shown in the figure, the NIC 310 may be disposed as a series of parallel rows 2120 in the first part of the pattern.

[0637] A deposition layer 330 suitable for forming patterned auxiliary electrodes 2150 is disposed on substantially all exposed surface 11 of the underlying material using an open mask 600 and / or maskless deposition processes, wherein no FMM 415 is employed during the high-temperature deposition process of the deposition layer 330. The underlying material includes areas of NIC 310 disposed in the pattern of row 2120 and areas of NPC 520, where NIC 310 has not yet been deposited.

[0638] Due to the nucleation inhibition properties of those rows 2120 where the NIC 310 is disposed, the deposited layer 330 disposed on such rows 2120 tends not to be retained, resulting in a selective deposition pattern of the deposited layer 330, which substantially corresponds to at least one second part 302 of the pattern, thereby causing the first part 301 including the row 2120 to substantially lack the sealing coating 340 of the deposited layer 330.

[0639] In other words, the deposition layer 330 that forms the auxiliary electrode 2150 is deposited essentially only selectively on the second part 302, which includes those areas surrounding but not occupying row 2120 of the NPC 520.

[0640] In some non-limiting examples, selectively depositing the auxiliary electrode 2150 to cover only certain rows 2120 of the lateral aspect of the device 2100 while leaving other areas uncovered can control and / or reduce optical interference associated with the presence of the auxiliary electrode 2150.

[0641] In some non-limiting examples, the auxiliary electrode 2150 can be selectively deposited in patterns that are not easily detectable by the naked eye from typical viewing distances.

[0642] In some non-limiting examples, the auxiliary electrode 2150 may be formed in a device other than an OLED device, and includes features for reducing the effective resistance of the electrodes in such devices.

[0643] auxiliary electrode

[0644] High-temperature deposition layer 330 deposition process (including but not limited to) Figure 21 The ability to pattern electrodes 1020, 1040, 2150, 5050 (including but not limited to the second electrode 1040 and / or the auxiliary electrode 2150) without the use of FMM 415 during the process described herein allows for the deployment of various configurations of the auxiliary electrode 2150 by employing selective coating 410.

[0645] Figure 22A A portion of an example version 2200 of a device 1000 having a plurality of emission regions 2210a-2210j and at least one non-emission region 2220 surrounding them is shown in a plan view. In some non-limiting instances, device 2200 may be an AMOLED device, wherein each of the emission regions 2210a-2210j corresponds to its (sub)pixel 1240 / 244x.

[0646] Figure 22B-22D Examples of a device 2200 corresponding to a portion of its adjacent emitting regions 2210a and 2210b, and a portion of at least one non-emitting region 2220 therebetween, are shown in combination with different configurations 2150b-2150d of the auxiliary electrode 2150 covering it. In some non-limiting examples, although not in… Figure 22B-22D It is explicitly stated that, however, the second electrode 1040 of device 2200 is understood to substantially cover at least both of its emission regions 2210a and 2210b and a portion of at least one non-emission region 2220 therebetween.

[0647] exist Figure 22BIn this embodiment, an auxiliary electrode configuration 2150b is disposed between two adjacent emitting regions 2210a and 2210b and electrically coupled to a second electrode 1040. In this example, the width α of the auxiliary electrode configuration 2150b is less than the spacing δ between the adjacent emitting regions 2210a and 2210b. Therefore, a gap exists within at least one non-emitting region 2220 on each side of the auxiliary electrode configuration 2150b. In some non-limiting embodiments, such an arrangement can reduce the likelihood of the auxiliary electrode configuration 2150b interfering with the light output of the device 2200 from at least one of the emitting regions 2210a and 2210b (in some non-limiting embodiments). In some non-limiting embodiments, such an arrangement may be suitable when the auxiliary electrode configuration 2150b is relatively thick (in some non-limiting embodiments, a thickness on the order of several hundred nm and / or several micrometers). In some non-limiting examples, the aspect ratio of the auxiliary electrode configuration 2150b may exceed about 0.05, such as at least about 0.1, 0.2, 0.5, 0.8, 1, or 2. As a non-limiting example, the height (thickness) of the auxiliary electrode configuration 2150b may exceed about 50 nm, such as at least about 80 nm, 100 nm, 200 nm, 500 nm, 700 nm, 1000 nm, 1500 nm, 1700 nm, or 2000 nm.

[0648] exist Figure 22C In this embodiment, an auxiliary electrode configuration 2150c is positioned between two adjacent emitting regions 2210a and 2210b and electrically coupled to the second electrode 1040. In this example, the width α of the auxiliary electrode configuration 2150c is substantially the same as the spacing δ between the adjacent emitting regions 2210a and 2210b. Therefore, there is no gap within at least one non-emitting region 2220 on either side of the auxiliary electrode configuration 2150c. In some non-limiting embodiments, such an arrangement may be suitable as a non-limiting example in the high pixel density device 2200 when the spacing δ between the adjacent emitting regions 2210a and 2210b is relatively small.

[0649] exist Figure 22DIn this embodiment, an auxiliary electrode 2150d is disposed between two adjacent emitting regions 2210a and 2210b and electrically coupled to a second electrode 1040. In this example, the width α of the auxiliary electrode configuration 2150d is greater than the spacing δ between the adjacent emitting regions 2210a and 2210b. Therefore, a portion of the auxiliary electrode configuration 2150d overlaps with a portion of at least one of the adjacent emitting regions 2210a and / or 2210b. Although the figures illustrate the degree of overlap between the auxiliary electrode configuration 2150d and each of the adjacent emitting regions 2210a and 2210b, in some non-limiting embodiments, the degree of overlap and / or the contour of the overlap between the auxiliary electrode configuration 2150d and at least one of the adjacent emitting regions 2210a and 2210b can be altered and / or modulated.

[0650] Figure 23 A schematic diagram showing an example of a pattern 2350 of an auxiliary electrode 2150 formed as a grid is shown in plan view. The grid covers the lateral aspect 910 of the emission region 2210 of the (sub)pixel 1240 / 244x, which may correspond to an example version 2300 of device 1000, and the lateral aspect 920 of the non-emission region 2220 surrounding the emission region 2210.

[0651] In some non-limiting instances, the auxiliary electrode pattern 2350 may extend substantially only over some, but not all, of the lateral aspects 920 of the non-emitting region 2220, so as not to substantially cover any of the lateral aspects 910 of the emitting region 2210.

[0652] Those skilled in the art will understand that, although the auxiliary electrode pattern 2350 is shown in the figures as being formed as a continuous structure such that all its elements are physically connected and electrically coupled to each other and to at least one electrode 1020, 1040, 2150, and / or busbar 5050, in some non-limiting instances, the at least one electrode may be a first electrode 1020 and / or a second electrode 1040. In some non-limiting instances, the auxiliary electrode pattern 2350 may be provided as a plurality of discrete elements of the auxiliary electrode pattern 2350, although the discrete elements remain electrically coupled to each other but are not physically connected. Even so, such discrete elements of the auxiliary electrode pattern 2350 can still significantly reduce the sheet resistance of at least one electrode 1020, 1040, 2150, and / or busbar 5050 to which they are electrically coupled, and thus reduce the sheet resistance of the device 2300, thereby increasing the efficiency of the device 2300, without substantially interfering with its optical characteristics.

[0653] In some non-limiting examples, the auxiliary electrode 2150 can be used in the apparatus 1000 having various arrangements of (sub)pixels 1240 / 244x. In some non-limiting examples, the (sub)pixels 1240 / 244x arrangement can be substantially rhomboid.

[0654] As a non-restrictive example, Figure 24A A plan view shows a group 2441-2443 of a plurality of emission regions 2210 in an example version 2400 of device 1000, each emission region corresponding to a subpixel 244x, surrounded by lateral aspects of a plurality of non-emission regions 2220 comprising a diamond-shaped configuration of PDL 1340. In some non-limiting instances, the configuration is defined by a pattern 2441-2443 of emission regions 2210 and PDL 1340 in alternating patterns of first and second rows.

[0655] In some non-limiting instances, the lateral aspect 1320 of the non-emitting region 2220 of PDL 1340 may be substantially elliptical. In some non-limiting instances, the major axis of the lateral aspect 1320 of the non-emitting region 2220 in the first row is aligned with and substantially perpendicular to the major axis of the lateral aspect 1320 of the non-emitting region 2220 in the second row. In some non-limiting instances, the major axis of the lateral aspect 1320 of the non-emitting region 2220 in the first row is substantially parallel to the axis of the first row.

[0656] In some non-limiting embodiments, the first group 2441 of the emitting region 2210 corresponds to a sub-pixel 244x that emits light at a first wavelength. In some non-limiting embodiments, the sub-pixels 244x of the first group 2441 may correspond to R (red) sub-pixels 2441. In some non-limiting embodiments, the lateral aspect 1310 of the emitting region 2210 of the first group 2441 may have a substantially rhomboid configuration. In some non-limiting embodiments, the emitting region 2210 of the first group 2441 is located in a pattern in the first row, before and after PDL 1340. In some non-limiting embodiments, the lateral aspect 1310 of the emitting region 2210 of the first group 2441 slightly overlaps with the lateral aspect 1320 of the non-emitting region 2220 that includes PDL 1340 in the same row, and with the lateral aspect 1320 of the adjacent non-emitting region 2220 that includes PDL 1340 in the pattern before and after the second row.

[0657] In some non-limiting embodiments, the second group 2442 of the emitting region 2210 corresponds to sub-pixels 244x that emit light at a second wavelength. In some non-limiting embodiments, the sub-pixels 244x of the second group 2442 may correspond to G (green) sub-pixels 2442. In some non-limiting embodiments, the lateral aspect 1310 of the emitting region 2210 of the second group 2441 may have a substantially elliptical configuration. In some non-limiting embodiments, the emitting region 2210 of the second group 2441 is located in the pattern of the second row, before and after PDL 1340. In some non-limiting embodiments, the major axis of some lateral aspects of the lateral aspect 1310 of the emitting region 2210 of the second group 2441 may be at a first angle. In some non-limiting embodiments, the first angle may be 45° relative to the axis of the second row. In some non-limiting embodiments, the major axes of other lateral aspects of the lateral aspect 1310 of the emission region 2210 of the second group 2441 may be at a second angle, and in some non-limiting embodiments, the second angle may be substantially perpendicular to the first angle. In some non-limiting embodiments, the emission regions 2210 of the first group 2441 (whose lateral aspect 1310 has a major axis at the first angle) alternate with the emission regions 2210 of the first group 2441 (whose lateral aspect 1310 has a major axis at the second angle).

[0658] In some non-limiting embodiments, the third group 2443 of the emitting region 2210 corresponds to sub-pixels 244x that emit light at a third wavelength. In some non-limiting embodiments, the sub-pixels 244x of the third group 2443 may correspond to B (blue) sub-pixels 2443. In some non-limiting embodiments, the lateral aspect 1310 of the emitting region 2210 of the third group 2443 may have a substantially rhomboid configuration. In some non-limiting embodiments, the emitting region 2210 of the third group 2443 is located in the pattern of the first row, before and after PDL 1340. In some non-limiting embodiments, the lateral aspect 1310 of the emitting region 2210 of the third group 2443 slightly overlaps with the lateral aspect 1310 of the non-emitting regions 2220 that include PDL 1340 in the same row and the lateral aspect 1320 of the adjacent non-emitting regions 2220 that include PDL 1340 in the pattern before and after the second row. In some non-limiting instances, the pattern in the second row includes a first group 2441 emission region 2210 alternating with the emission region 2210 of the third group 2443, each region before and after PDL 1340.

[0659] Now go to Figure 24B It shows along Figure 24AThe figure shows an example cross-sectional view of device 2400 taken by lines 24B-24B. In the figure, device 2400 is shown as including a substrate 10 and multiple elements of a first electrode 1020 formed on its exposed layer surface 11. The substrate 10 may include a base substrate 1012 (not shown for simplicity of illustration) and / or at least one TFT structure 1100 corresponding to and used to drive each sub-pixel 244x. A PDL 1340 is formed over the substrate 10 between the elements of the first electrode 1020 to define an emission region 2210 over each element of the first electrode 1020, the emission region being separated by a non-emission region 2220 including the PDL 1340. In the figure, all emission regions 2210 correspond to a second group 2442.

[0660] In some non-limiting examples, at least one semiconductive layer 1030 is deposited on each element of the first electrode 1020, between the surrounding PDL 1340.

[0661] In some non-limiting examples, the second electrode 1040 (which may be a common cathode 1242 in some non-limiting examples) may be deposited on the emission region 2210 of the second set 2442 to form its G (green) sub-pixel 2442 and deposited on the surrounding PDL 1340.

[0662] In some non-limiting examples, the NIC 310 is selectively deposited over the second electrode 1040 on the lateral aspect 1310 of the emission region 2210 of the second group 2442 of the G (green) subpixels 2442, allowing the deposition layer 330 to be selectively deposited over multiple portions of the second electrode 1040 that are substantially lacking the NIC 310, i.e., across the lateral aspect 1320 of the non-emission region 2220 of the PDL 1340. In some non-limiting examples, the deposition layer 330 may tend to accumulate along the substantially flat portions of the PDL 1340, because the deposition layer 330 may not tend to remain on the angled segments of the PDL 1340, but rather tend to descend to the bottom of such angled segments coated with the NIC 310. In some non-limiting examples, the deposition layer 330 on the substantially flat portions of the PDL 1340 may form at least one auxiliary electrode 2150 that can be electrically coupled to the second electrode 1040.

[0663] In some non-limiting embodiments, device 2400 may include a CPL and / or an external coupling layer. As a non-limiting embodiment, such a CPL and / or external coupling layer may be directly disposed on the surface of the second electrode 1040 and / or the surface of the NIC 310. In some non-limiting embodiments, such a CPL and / or external coupling layer may be provided across the lateral aspect 1310 of at least one emission region 2210 corresponding to at least one sub-pixel 1240 / 244x.

[0664] In some non-limiting examples, NIC 310 can also serve as a refractive index matching coating. In some non-limiting examples, NIC 310 can also serve as an external coupling layer.

[0665] In some non-limiting examples, device 2400 includes an encapsulation layer. Non-limiting examples of such an encapsulation layer include a glass cover, a barrier film, a barrier adhesive, and / or a TFE layer 2450, as shown by the dashed lines in the figure, for encapsulating device 2400. In some non-limiting examples, the TFE layer 2450 can be considered as a type of barrier coating 2050.

[0666] In some non-limiting embodiments, the encapsulation layer may be disposed over at least one of the second electrode 1040 and / or NIC 310. In some non-limiting embodiments, the device 2400 includes additional optical and / or structural layers, coatings, and components, including, but not limited to, polarizers, color filters, anti-reflective coatings, anti-glare coatings, cover glass, and / or optically clear adhesives (OCAs).

[0667] Now go to Figure 24C It shows along Figure 24A The figure shows an example cross-sectional view of device 2400 taken along lines 24C-24C. In the figure, device 2400 is shown as including a substrate 10 and a plurality of elements of a first electrode 1020 formed on its exposed surface 11. A PDL 1340 is formed over the substrate 10 between the elements of the first electrode 1020 to define an emission region 2210 over each element of the first electrode 1020, the emission region being separated by a non-emission region 2220 including the PDL 1340. In the figure, the emission regions 2210 are alternately associated with a first group 2441 and a third group 2443.

[0668] In some non-limiting examples, at least one semiconductive layer 1030 is deposited on each element of the first electrode 1020, between the surrounding PDL 1340.

[0669] In some non-limiting examples, the second electrode 1040 (which may be a common cathode 1242 in some non-limiting examples) may be deposited on the emission region 2210 of the first group 2441 to form its R (red) sub-pixel 2441, deposited on the emission region 2210 of the third group 2443 to form its B (blue) sub-pixel 2443, and deposited on the surrounding PDL 1340.

[0670] In some non-limiting examples, the NIC 310 is selectively deposited on the lateral aspect 1310 of the emission region 2210 of the first group 2441 of R (red) subpixels 2441 and the third group 2443 of B (blue) subpixels 2443 across the second electrode 1040, to allow the deposition layer 330 to be selectively deposited on multiple portions of the second electrode 1040 that are substantially lacking the NIC 310, i.e., across the lateral aspect 1320 of the non-emission region 2220 of the PDL 1340. In some non-limiting examples, the deposition layer 330 may tend to accumulate along the substantially flat portions of the PDL 1340, because the deposition layer 330 may not tend to remain on the angled segments of the PDL 1340, but rather tend to descend to the bottom of such angled segments coated with the NIC 310. In some non-limiting examples, the deposited layer 330 on the substantially flat portion of the PDL 1340 may form at least one auxiliary electrode 2150 that can be electrically coupled to the second electrode 1040.

[0671] Now go to Figure 25 An example version 2500 of the device 1000 is shown, which covers Figure 13 The apparatus is shown in a cross-sectional view, but has several additional deposition steps as described herein.

[0672] Within the first part 301 of the device 2500 (which substantially corresponds to the lateral aspect 1310 of the emission region 2210 corresponding to the (sub)pixel 1240 / 244x) and not within the second part 302 of the device 2500 (which substantially corresponds to the lateral aspect 1320 surrounding the non-emission region 2220 of the first part 301), the device 2500 shows a NIC 310 selectively deposited on the exposed surface 11 of the underlying material (in the figure, the second electrode 1040).

[0673] In some non-restrictive instances, the NIC 310 can be selectively deposited using a shadow mask 415.

[0674] The NIC 310 provides an exposed layer surface 11 with a relatively low initial adhesion probability S0 within the first part 301 for the subsequent deposition layer 330 deposited thereon to form an auxiliary electrode 2150.

[0675] After selectively depositing NIC 310, a deposition layer 330 is deposited on the device 2500, but is essentially retained only in the second part 302, which is essentially devoid of NIC 310, to form the auxiliary electrode 2150.

[0676] In some non-limiting instances, an open mask 600 and / or maskless deposition processes can be used to deposit the deposition layer 330.

[0677] The auxiliary electrode 2150 is electrically coupled to the second electrode 1040 to reduce the sheet resistance of the second electrode 1040, and includes a second portion, as shown, located above and in physical contact with the second electrode 1040 across the substantially absent NIC 310.

[0678] In some non-limiting examples, the deposited layer 330 may include substantially the same material as the second electrode 1040 to ensure a high initial adhesion probability S0 for the deposited layer 330 in the second part.

[0679] In some non-limiting examples, the second electrode 1040 may comprise substantially pure Mg and / or an alloy of Mg with another metal (including but not limited to Ag). In some non-limiting examples, the Mg:Ag alloy composition, by volume, may range from about 1:9. In some non-limiting examples, the second electrode 1040 may comprise a metal oxide, including but not limited to ternary metal oxides, such as, but not limited to, ITO and / or IZO and / or combinations of metals and / or metal oxides.

[0680] In some non-limiting examples, the deposition layer 330 used to form the auxiliary electrode 2150 may include substantially pure Mg.

[0681] Now go to Figure 26 An example version 2600 of the device 1000 is shown, which covers Figure 13 The apparatus is shown in a cross-sectional view, but has several additional deposition steps as described herein.

[0682] Within a first portion 301 of the device 2600 (which substantially corresponds to a portion of the lateral aspect 1310 of the emission region 2210 corresponding to the (sub)pixel 1240 / 244x) and not within a second portion 302, the device 2600 shows a NIC 310 selectively deposited on the exposed surface 11 of the underlying material (in the figure, the second electrode 1040). In the figure, the first portion 301 may extend partially along the range of the angled segment that defines the emission region 2210.

[0683] In some non-limiting instances, the NIC 310 can be selectively deposited using the shadow mask 410.

[0684] The NIC 310 provides an exposed layer surface 11 with a relatively low initial adhesion probability S0 within the first part 301 for the subsequent deposition layer 330 deposited thereon to form an auxiliary electrode 2150.

[0685] Following the selective deposition of the NIC 310, a deposition layer 330 is deposited on the device 2600, but is essentially retained only within the second portion 302, which is substantially devoid of the NIC 310, to form the auxiliary electrode 2150. Thus, in the device 2600, the auxiliary electrode 2150 can extend partially across the angled segments of the PDL 1340 defining the emission region 2210.

[0686] In some non-limiting instances, an open mask 600 and / or maskless deposition processes can be used to deposit the deposition layer 330.

[0687] The auxiliary electrode 2150 is electrically coupled to the second electrode 1040 to reduce the sheet resistance of the second electrode 1040, and includes a second part 302, as shown, located above and in physical contact with the second electrode 1040 across the substantially nonexistent NIC 310.

[0688] In some non-limiting examples, the material that may include the second electrode 1040 may not have a high initial adhesion probability S0 to the deposited layer 330.

[0689] Figure 27 This scenario illustrates such a scenario: Example version 2700 of device 1000 is shown, which covers… Figure 13 The apparatus is shown in a cross-sectional view, but has several additional deposition steps as described herein.

[0690] Device 2700 shows NPC 520 deposited on the surface 11 of the exposed layer of the underlying material (in the figure, the second electrode 1040).

[0691] In some non-limiting instances, NPC 520 can be deposited using open mask 600 and / or maskless deposition processes.

[0692] Subsequently, within the first part 301 of the device 2700 (which substantially corresponds to a portion of the lateral aspect 1310 of the emission region 2210 corresponding to the (sub)pixel 1240 / 244x) and not within the second part 302 of the device 2700 (which substantially corresponds to the lateral aspect 1320 of the non-emission region 2220 surrounding the first part 301), the NIC 310 is selectively deposited on the exposed surface 11 of the underlying material (NPC 520 in the figure).

[0693] In some non-restrictive instances, the NIC 310 can be selectively deposited using a shadow mask 415.

[0694] The NIC 310 provides an exposed layer surface 11 with a relatively low initial adhesion probability S0 within the first part 301 for the subsequent deposition layer 330 deposited thereon to form an auxiliary electrode 2150.

[0695] After selectively depositing NIC 310, a deposition layer 330 is deposited on the device 2700, but is essentially retained only in the second part 302, which is essentially devoid of NIC 310, to form the auxiliary electrode 2150.

[0696] In some non-limiting instances, an open mask 600 and / or maskless deposition processes can be used to deposit the deposition layer 330.

[0697] The auxiliary electrode 2150 is electrically coupled to the second electrode 1040 to reduce its sheet resistance. Although, as shown, the auxiliary electrode 2150 is not located above and in physical contact with the second electrode 1040, those skilled in the art will understand that the auxiliary electrode 2150 can be electrically coupled to the second electrode 1040 through many well-known mechanisms. As a non-limiting example, the presence of a relatively thin film (in some non-limiting examples, up to about 50 nm) of the NIC 310 and / or NPC 520 still allows current to pass through, thus allowing for a reduction in the sheet resistance of the second electrode 1040.

[0698] Now go to Figure 28 An example version 2800 of the device 1000 is shown, which covers Figure 13 The apparatus is shown in a cross-sectional view, but has several additional deposition steps as described herein.

[0699] Device 2800 shows a NIC 310 deposited on the surface 11 of the exposed layer of the underlying material (in the figure, the second electrode 1040).

[0700] In some non-limiting instances, NIC 310 can be deposited using open mask 600 and / or maskless deposition processes.

[0701] NIC 310 provides an exposed layer surface 11 with a relatively low initial adhesion probability S0, or a deposited layer 330 thereon to form an auxiliary electrode 2150.

[0702] After the deposition of NIC 310, within the NPC portion 1503 of device 2800 (which substantially corresponds to a portion of the lateral aspect 1320 of the non-emitting region 2220 surrounding the second portion of device 2800, substantially corresponding to the lateral aspect 1310 of the emitting region 2210 corresponding to the (sub)pixel 1240 / 244x), NPC 520 is selectively deposited on the exposed layer surface 11 of the underlying material (NIC 310 in the figure).

[0703] In some non-restricted instances, NPC 520 can be selectively deposited using shadow mask 415.

[0704] The NPC 520 provides an exposed layer surface 11 with a relatively high initial adhesion probability S0 within the first part 301, or a deposition layer 330 thereafter forms an auxiliary electrode 2150.

[0705] After selective deposition of NPC 520, deposition layer 330 is deposited on device 2800, but is essentially retained only within NPC section 1503, where NIC 310 has overlapped with NPC 520 to form auxiliary electrode 2150.

[0706] In some non-limiting instances, an open mask 600 and / or maskless deposition processes can be used to deposit the deposition layer 330.

[0707] The auxiliary electrode 2150 is electrically coupled to the second electrode 1040 to reduce the sheet resistance of the second electrode 1040.

[0708] Remove selective coating

[0709] In some non-limiting embodiments, NIC 310 may be removed after depositing deposition layer 330, such that at least a portion of the previously exposed surface 11 of the underlying material covered by NIC 310 may be re-exposed. In some non-limiting embodiments, NIC 310 may be selectively removed by etching and / or dissolving NIC 310 and / or by employing plasma and / or solvent treatment techniques that substantially do not affect or corrode deposition layer 330.

[0710] Now go to Figure 29A The figure shows an example cross-sectional view of an example version 2900 of the apparatus 1000 at deposition stage 3300a, in which the NIC 310 has been selectively deposited on a first portion 301 of the exposed surface 11 of the underlying material. In the figure, the underlying material may be a substrate 10.

[0711] exist Figure 29B In the diagram, apparatus 2900 is shown in deposition stage 3300b, in which a deposition layer 330 is deposited on the exposed surface 11 of the underlying material, i.e., on the exposed surface 11 of the NIC 310 where NIC 310 has been deposited during stage 3300a and on the exposed surface 11 of the substrate 10 where NIC 310 has not been deposited during stage 330a. Due to the nucleation-inhibiting properties of the first portion 301 on which NIC 310 is disposed, the deposition layer 330 disposed thereon tends not to be retained, resulting in a selective deposition pattern of the deposition layer 330 corresponding to the second portion 302, thereby making the first portion 301 substantially lacking in deposition layer 330.

[0712] exist Figure 29CIn the diagram, apparatus 3300 is shown at deposition stage 3300c, where NIC 310 has been removed from the first portion 301 of the exposed layer surface 11 of substrate 10, such that the deposition layer 330 deposited during stage 3300b remains on substrate 10 and the area of ​​substrate 10 on which NIC 310 was deposited during stage 3300a is now exposed or uncovered.

[0713] In some non-limiting instances, removal of NIC 310 in stage 3300c can be achieved by exposing device 2900 to solvents and / or plasmas that react with and / or etch away NIC 310 without significantly affecting the deposited layer 330.

[0714] Transparent OLED

[0715] Now go to Figure 30A This diagram shows an example plan view of a transmissive (transparent) version of device 1000, generally shown as 3000. In some non-limiting embodiments, device 3000 is an AMOLED device having a plurality of pixel regions 3010 and a plurality of transmissive regions 3020. In some non-limiting embodiments, at least one auxiliary electrode 2150 may be deposited on the exposed layer surface 11 of the underlying material between the pixel regions 3010 and / or the transmissive regions 3020.

[0716] In some non-limiting instances, each pixel region 3010 may include multiple emission regions 2210, each emission region corresponding to a sub-pixel 244x. In some non-limiting instances, the sub-pixel 244x may correspond to R (red) sub-pixel 2441, G (green) sub-pixel 2442, and / or B (blue) sub-pixel 2443, respectively.

[0717] In some non-limiting instances, each transmission region 3020 is substantially transparent and allows light to pass through its entire cross-sectional aspect.

[0718] Now go to Figure 30B It shows along Figure 30AThe figure shows an example cross-sectional view of device 3000 taken by lines 30B-30B. In the figure, device 3000 is shown as including a substrate 10, a TFT insulating layer 1180, and a first electrode 1020 formed on the surface of the TFT insulating layer 1180. The substrate 10 may include a base substrate 1012 (not shown for simplicity of illustration) and / or at least one TFT structure 1100 corresponding to and used to drive each sub-pixel 244x substantially positioned below it and electrically coupled to its first electrode 1020. A PDL 1340 is formed on the substrate 10 in a non-emitting region 2220 to define an emitting region 2210, also corresponding to each sub-pixel 244x, above its corresponding first electrode 1020. The PDL 1340 covers the edge of the first electrode 1020.

[0719] In some non-limiting instances, at least one semiconductive layer 1030 is deposited over the exposed area of ​​the first electrode 1020, and in some non-limiting instances, it is deposited over at least a plurality of portions of the surrounding PDL 1340.

[0720] In some non-limiting examples, the second electrode 1040 may be deposited on at least one semiconductive layer 1030, on the pixel region 3010 to form its sub-pixels 244x, and in some non-limiting examples, on the surrounding PDL 1340 in the transmissive region 3020, at least partially.

[0721] In some non-limiting instances, the NIC 310 is selectively deposited on the first portion 301 of the device 3000, including both the pixel region 3010 and the transmission region 3020, but excluding the region of the second electrode 1040 corresponding to the auxiliary electrode 2150, said region including its second portion 302.

[0722] In some non-limiting examples, the entire exposed surface 11 of the device 3000 is then exposed to a vapor flux of deposited material 531, which in some non-limiting examples may be Mg. Deposited layer 330 is selectively deposited over a substantially non-NIC 310-free second portion of the second electrode 1040 to form an auxiliary electrode 2150, which is electrically coupled to and in some non-limiting examples to the uncoated portion of the second electrode 1040 and in physical contact with the uncoated portion of the second electrode.

[0723] Meanwhile, the transmissive region 3020 of the device 3000 is substantially free of any material that could substantially affect the transmission of light through it. Specifically, as shown, the TFT structure 1100 and the first electrode 1020 are positioned in the cross-sectional aspect below their respective sub-pixels 244x and, together with the auxiliary electrode 2150, are located outside the transmissive region 3020. Therefore, these components do not attenuate or transmit through the transmissive region 3020. In some non-limiting examples, such an arrangement allows a viewer to view the device 3000 from a typical viewing distance with a see-through effect (in some non-limiting examples, when all (sub)pixels 1240 / 244x are not emitting), thus forming a transparent AMOLED device 3000.

[0724] Although not shown in the figures, in some non-limiting embodiments, the device 3000 may further include an NPC 520 disposed between the auxiliary electrode 2150 and the second electrode 1040. In some non-limiting embodiments, the NPC 520 may also be disposed between the NIC 310 and the second electrode 1040.

[0725] In some non-limiting embodiments, NIC 310 may be formed simultaneously with at least one semiconductive layer 1030. As a non-limiting embodiment, at least one material used to form NIC 310 may also be used to form at least one semiconductive layer 1030. In such non-limiting embodiments, the number of stages for manufacturing device 3000 can be reduced.

[0726] Those skilled in the art will understand that, in some non-limiting instances, various other layers and / or coatings, including but not limited to those forming at least one semiconductive layer 1030 and / or a second electrode 1040, may cover a portion of the transmission region 3020, particularly if such layers and / or coatings are substantially transparent. In some non-limiting instances, the PDL 1340 may have a reduced thickness, including but not limited to, by forming holes therein, in some non-limiting instances, which are no different from the holes defined for the emission region 2210, to further facilitate light transmission through the transmission region 3020.

[0727] Those skilled in the art should understand that, in some non-limiting instances, different approaches may be used. Figure 30A and 30B The arrangement shown is a (sub)pixel 340 / 244x arrangement.

[0728] Those skilled in the art should understand that, in some non-limiting instances, different approaches may be used. Figure 30A and 30BThe arrangement of the auxiliary electrode 2150 shown is illustrated. As a non-limiting example, the auxiliary electrode 2150 may be disposed between the pixel region 3010 and the transmission region 3020. As a non-limiting example, the auxiliary electrode 2150 may be disposed between sub-pixels 244x within the pixel region 3010.

[0729] Now go to Figure 31A The diagram shows an example plan view of a transparent version of device 1000, generally shown as 3100. In some non-limiting instances, device 3100 is an AMOLED device having a plurality of pixel regions 3010 and a plurality of transmissive regions 3020. Device 3100 differs from device 3000 in that there is no auxiliary electrode 2150 between the pixel regions 3010 and / or the transmissive regions 3020.

[0730] In some non-limiting instances, each pixel region 3010 may include multiple emission regions 2210, each emission region corresponding to a sub-pixel 244x. In some non-limiting instances, the sub-pixel 244x may correspond to R (red) sub-pixel 2441, G (green) sub-pixel 2442, and / or B (blue) sub-pixel 2443, respectively.

[0731] In some non-limiting instances, each transmission region 3020 is substantially transparent and allows light to pass through its entire cross-sectional aspect.

[0732] Now go to Figure 31B It shows along Figure 31A The figure shows an example cross-sectional view of device 3100 taken by lines 31B-31B. In the figure, device 3100 is shown as including a substrate 10, a TFT insulating layer 1180, and a first electrode 1020 formed on the surface of the TFT insulating layer 1180. The substrate 10 may include a base substrate 1012 (not shown for simplicity of illustration) and / or at least one TFT structure 1100 corresponding to and used to drive each sub-pixel 244x substantially positioned below it and electrically coupled to its first electrode 1020. A PDL 1340 is formed on the substrate 10 in a non-emitting region 2220 to define an emitting region 2210, also corresponding to each sub-pixel 244x, above its corresponding first electrode 1020. The PDL 1340 covers the edge of the first electrode 1020.

[0733] In some non-limiting instances, at least one semiconductive layer 1030 is deposited over the exposed area of ​​the first electrode 1020, and in some non-limiting instances, it is deposited over at least a plurality of portions of the surrounding PDL 1340.

[0734] In some non-limiting embodiments, the first deposition layer 330a may be deposited over at least one semiconductive layer 1030, over the pixel region 3010 to form its sub-pixels 244x, and over the surrounding PDL 1340 in the transmission region 3020. In some non-limiting embodiments, the thickness of the first deposition layer 330a may be relatively thin, such that the presence of the first deposition layer 330a across the transmission region 3020 does not substantially attenuate the transmission of light through it. In some non-limiting embodiments, the first deposition layer 330a may be deposited using an open mask 600 and / or a maskless deposition process.

[0735] In some non-limiting instances, the NIC 310 is selectively deposited on the first part of the device 3100, including the transmission region 3020.

[0736] In some non-limiting examples, the entire surface of device 3100 is then exposed to a vapor flux of deposition material 531 (in some non-limiting examples, the deposition material may be Mg) to selectively deposit a second deposition layer 330b over a second portion 302 (in some examples, pixel region 3010) of the first deposition layer 330a that is substantially lacking NIC 310, such that the second deposition layer 330b is electrically coupled to the uncoated portion of the first deposition layer 330a and, in some non-limiting examples, physically contacts the uncoated portion of the first deposition layer to form a second electrode 1040.

[0737] In some non-limiting examples, the thickness of the first deposition layer 330a may be less than the thickness of the second deposition layer 330b. In this way, relatively high transmittance can be maintained in the transmission region 3020, where only the first deposition layer 330a can extend over the transmission region. In some non-limiting examples, the thickness of the first deposition layer 330a may be less than about: 30 nm, 25 nm, 20 nm, 15 nm, 10 nm, 8 nm, and / or 5 nm. In some non-limiting examples, the thickness of the second deposition layer 330b may be less than about: 30 nm, 25 nm, 20 nm, 15 nm, 10 nm, or 8 nm.

[0738] Therefore, in some non-limiting examples, the thickness of the second electrode 1040 may be less than about 40 nm and / or in some non-limiting examples, it may be between about 5-30 nm, 10-25 nm or 15-25 nm.

[0739] In some non-limiting examples, the thickness of the first deposition layer 330a may be greater than the thickness of the second deposition layer 330b. In some non-limiting examples, the thickness of the first deposition layer 330a and the thickness of the second deposition layer 330b may be substantially the same.

[0740] In some non-limiting examples, at least one deposition material 531 used to form the first deposition layer 330a may be substantially the same as at least one deposition material 531 used to form the second deposition layer 330b. In some non-limiting examples, such at least one deposition material 531 may be substantially as described herein with respect to the first electrode 1020, the second electrode 1040, the auxiliary electrode 2150, and / or its deposition layer 330.

[0741] In some non-limiting examples, the transmissive region 3020 of device 3100 is substantially devoid of any material that could substantially affect the transmission of light through it. Specifically, as shown, the TFT structure 1100 and / or the first electrode 1020 are positioned in the cross-sectional aspect below their respective sub-pixels 244x and outside the transmissive region 3020. Therefore, these components do not attenuate or transmit through the transmissive region 3020. In some non-limiting examples, such an arrangement allows a viewer to view device 3100 from a typical viewing distance with a transparent device 3100 (in some non-limiting examples, when all (sub)pixels 340 / 244x are not emitting), thus forming a transparent AMOLED device 3100.

[0742] Although not shown in the figures, in some non-limiting embodiments, the apparatus 3100 may further include an NPC 520 disposed between the second deposition layer 330b and the first deposition layer 330a. In some non-limiting embodiments, the NPC 520 may also be disposed between the NIC 310 and the first deposition layer 330a.

[0743] In some non-limiting embodiments, the NIC 310 may be formed simultaneously with at least one semiconductive layer 1030. As a non-limiting embodiment, at least one material used to form the NIC 310 may also be used to form at least one semiconductive layer 1030. In such non-l...

Claims

1. An apparatus having multiple layers, the apparatus comprising: Nucleation inhibition coating (NIC) is disposed on the first layer surface of the bottom layer in the first part of the lateral aspect of the device; as well as A deposition layer comprising a deposition material, the deposition layer being disposed on the surface of a second layer; The initial adhesion probability of the deposited layer to the surface of the NIC in the first part is less than the initial adhesion probability of the deposited layer to the surface of the second layer, resulting in the NIC lacking a sealing coating of the deposited material; and The NIC mentioned above includes compounds containing rare earth elements.

2. The apparatus according to claim 1, wherein the rare earth element comprises at least one of the following: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), promethium (Pm), praseodymium (Pr), scandium (Sc), samarium (Sm), terbium (Tb), thulium (Tm), yttrium (Y), and ytterbium (Yb).

3. The apparatus according to claim 1 or 2, wherein the rare earth element comprises Ce, Dy, Er, Eu, Gd, Ho, Lu, Nd, Pr, Sm, Tb, Tm and Yb.

4. The apparatus according to claim 1 or 2, wherein the rare earth element comprises Ce, Dy, Er, Eu, Gd, Ho, Lu, Nd, Sm, Tm and Yb.

5. The apparatus of claim 1, wherein the compound comprises an oxide of the rare earth element.

6. The device of claim 5, wherein the oxide comprises at least one of Ce02, Dy203, Er203, Eu203, Gd203, Ho203, La203, Lu203, Nd203, Pr60 11 , Pr203, Pr02, Pr205, Pm203, Sm203, Sc203, Tb70 12 , Tb203, Tb02, Tb307, Tm203, Yb203, and Y203.

7. The apparatus of claim 1, wherein the critical surface energy of the NIC is less than about 30 dynes / cm.

8. The apparatus of claim 1, wherein the deposited layer comprises a closed coating on the surface of the second layer in the second portion of the lateral aspect.

9. The apparatus of claim 8, further comprising the interface coating in the second part, wherein the interface coating comprises the rare earth element.

10. The apparatus of claim 9, wherein the second surface is the surface of the interface coating.

11. The apparatus according to claim 9 or 10, wherein the rare earth element in the interface coating has an oxidation state of zero.

12. The apparatus of claim 9 or 10, wherein the interface coating is adjacent to the NIC in the lateral direction.

13. The apparatus of claim 9, wherein the rare earth element comprises Yb.

14. The device of claim 13, wherein the interface coating comprises Yb 0 and the NIC comprises Yb2O3.

15. The apparatus of claim 9 or 10, wherein the critical surface energy of the NIC is lower than the critical surface energy of the interface coating.

16. The apparatus according to any one of claims 8 to 10, wherein the second part comprises at least one emission region.

17. The apparatus of claim 16, wherein the first part includes at least a portion of the non-emission region.

18. The apparatus of claim 16, wherein the transmitting region comprises: Substrate; First electrode; At least one semiconductive layer; as well as Second electrode; The first electrode is located between the substrate and the at least one semiconducting layer; and The at least one semiconducting layer is located between the first electrode and the second electrode.

19. The apparatus of claim 18, wherein the deposited layer is electrically coupled to the second electrode.

20. The apparatus of claim 18, wherein the deposited layer forms at least a portion of the second electrode in the second part.

21. The apparatus according to any one of claims 18 to 20, wherein the second part includes a partition and a third electrode in a barrier region of the partition, wherein the deposited layer is electrically coupled to the second electrode and the third electrode.

22. The apparatus of claim 1 or 2, wherein the deposited layer comprises at least one discontinuous layer with a granular structure, and the surface of the second layer is the surface of the NIC.

23. The apparatus of claim 22, further comprising at least one cover layer disposed on and forming an interface therewith on the surface of the NIC, wherein the deposited layer is positioned at the interface.

24. The apparatus of claim 23, wherein the first part includes at least one emission region, and the deposition layer is tuned to enhance the external coupling of at least one electromagnetic signal emitted by the emission region.

25. The apparatus of claim 24, wherein the resonance imparted by the at least one particulate structure is tuned by selecting features selected from at least one of the following: characteristic size, size distribution, shape, surface coverage, configuration, dispersion, material, and any combination thereof of the at least one particulate structure.

26. The apparatus of claim 25, wherein the resonance is tuned by changing at least one of the following: the deposition thickness of the deposited material, the average film thickness of the NIC, the thickness of the at least one capping layer, the composition of the metal in the deposited material, the dielectric constant of the at least one particulate structure, the degree to which the NIC is doped with organic materials of different compositions, the refractive index of the NIC, the extinction coefficient of the NIC, the material deposited as the at least one capping layer, the refractive index of the at least one capping layer, the extinction coefficient of the at least one capping layer, and any combination thereof.

27. The apparatus according to any one of claims 24 to 26, wherein the first part is confined to the at least one emission region.

28. The apparatus according to any one of claims 24 to 26, wherein the first part is constrained by the second part comprising at least one non-emission region in the lateral aspect.

29. The apparatus of claim 28, wherein the NIC extends from the first portion into the second portion.

30. The apparatus of claim 24, wherein the transmitting region comprises: Substrate; First electrode; At least one semiconductive layer; as well as Second electrode; The first electrode is located between the substrate and the at least one semiconducting layer; and The at least one semiconducting layer is located between the first electrode and the second electrode.

31. The apparatus of claim 30, wherein the underlying layer includes the second electrode.

32. The apparatus of claim 30, wherein the underlying layer comprises one of the at least one semiconductive layer.

33. The apparatus of claim 32, wherein the underlying layer is selected from at least one of: a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

34. The apparatus of claim 33, wherein the at least one cover layer is selected from at least one of the electron transport layer and the electron injection layer.

35. The apparatus of claim 30, wherein the deposited layer comprises the second electrode.

36. The apparatus of claim 22, wherein the deposited layer is formed by deposition of the deposited material across the lateral aspect.

37. The apparatus of claim 8, wherein the deposited material forms an electrode in the second part.

38. The apparatus of claim 37, wherein the electrode in the second part is an auxiliary electrode.

39. The apparatus of claim 37, wherein the second part includes at least one additional emission region, and the electrode in the second part is an electrode of the at least one additional emission region.

40. The apparatus of claim 39, wherein the at least one additional transmitting region comprises: Substrate; First electrode; At least one semiconductive layer; as well as Second electrode; The first electrode is located between the substrate and the at least one semiconducting layer; and The at least one semiconducting layer is located between the first electrode and the second electrode.

41. The apparatus of claim 40, wherein the electrode in the second part comprises the second electrode of the at least one additional emission region.

42. The apparatus of claim 37, wherein the electrode in the second part is a closed coating of the deposited material.

43. The apparatus according to claim 1 or 2, wherein the deposited material comprises Mg.

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