Multilayer electronic components

Abstract

This invention provides a multilayer electronic component that can suppress heat generation in high-voltage environments, has low equivalent series resistance (ESR), improved capacitance characteristics, a high Q value, and satisfies COG characteristics. [Solution] A stacked electronic component according to one embodiment of the present invention includes a body containing a dielectric layer mainly composed of (Ca, Sr)(Zr, Ti)O3 and internal electrodes arranged alternately with the dielectric layer, and an external electrode arranged on the body, wherein the dielectric layer contains a first secondary phase containing rare earth elements (RE), zirconium (Zr), and oxygen (O) at an area percentage of 0.1% to 10% of the cross-sectional area of ​​the dielectric layer, and the internal electrodes may contain a second secondary phase containing nickel (Ni) and oxygen (O) at an area percentage of 0.5% to 10% of the cross-sectional area of ​​the internal electrodes.

Description

[Technical Field]

[0001] This invention relates to a stacked electronic component. [Background technology]

[0002] A multilayer ceramic capacitor (MLCC), a type of multilayer electronic component, is a chip-type capacitor that is mounted on the printed circuit boards of various electronic products such as liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smartphones, and mobile phones, and plays the role of charging or discharging electricity.

[0003] Such multilayer ceramic capacitors can be used as components in various electronic devices due to their advantages of being small, yet guaranteeing high capacitance, and being easy to implement. As various electronic devices such as computers and mobile devices become smaller and more powerful, the demand for smaller and higher-capacitance multilayer ceramic capacitors is increasing.

[0004] These multilayer ceramic capacitors can be classified into two categories: Class I, which are capacitors with high stability and low loss and are used in circuits requiring high reliability and stability; and Class II, which are capacitors with high efficiency in a small volume and are used in applications such as bypass and coupling.

[0005] Recently, there has been increasing demand for Class I products that minimize power consumption and heat generation in high-voltage environments, while simultaneously minimizing equivalent series resistance (ESR) and meeting C0G characteristics such as high capacitance and a high Q (Quality Factor). [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2011-057511 [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] One of the various problems that this invention aims to solve is to provide a stacked electronic component that can suppress heat generation in a high-voltage environment.

[0008] One of the various problems that this invention aims to solve is to provide a multilayer electronic component with low equivalent series resistance (ESR).

[0009] One of the various problems that this invention aims to solve is to provide a stacked electronic component with improved capacitance characteristics and a high Q value.

[0010] One of the various problems that this invention aims to solve is to provide a stacked electronic component that satisfies COG characteristics.

[0011] However, the various problems that the present invention aims to solve are not limited to those described above, and can be more easily understood in the process of describing specific embodiments of the present invention. [Means for solving the problem]

[0012] A stacked electronic component according to one embodiment of the present invention includes a body containing a dielectric layer mainly composed of (Ca, Sr)(Zr, Ti)O3 and internal electrodes arranged alternately with the dielectric layer, and an external electrode arranged on the body, wherein the dielectric layer contains a first secondary phase containing rare earth elements (RE), zirconium (Zr), and oxygen (O) at an area percentage of 0.1% to 10% of the cross-sectional area of ​​the dielectric layer, and the internal electrodes may contain a second secondary phase containing nickel (Ni) and oxygen (O) at an area percentage of 0.5% to 10% of the cross-sectional area of ​​the internal electrodes.

[0013] A multilayer electronic component according to another embodiment of the present invention includes a dielectric layer containing a dielectric material having a perovskite structure (ABO3) as a main component, a main body including internal electrodes alternately arranged with the dielectric layer, and external electrodes arranged on the main body. The dielectric layer contains a first secondary phase containing a rare earth element (RE) and the B-site element at an area percentage of 0.1% or more and 10% or less with respect to the cross-sectional area of the dielectric layer, and the internal electrode can contain a second secondary phase containing the main component metal of the internal electrode at an area percentage of 0.5% or more and 10% or less with respect to the cross-sectional area of the internal electrode.

Effects of the Invention

[0014] One of the various effects of the present invention is to suppress heat generation of the multilayer electronic component in a high-voltage environment.

[0015] One of the various effects of the present invention is to reduce the equivalent series resistance (ESR) of the multilayer electronic component.

[0016] One of the various effects of the present invention is to improve the capacitance characteristics and Q value of the multilayer electronic component.

[0017] One of the various effects of the present invention is that the multilayer electronic component satisfies the COG characteristics.

[0018] However, the diverse and significant advantages and effects of the present invention are not limited to the above-described content, and can be more easily understood in the process of describing the specific embodiments of the present invention.

Brief Description of the Drawings

[0019] [Figure 1] A perspective view of a multilayer electronic component according to an embodiment of the present invention is schematically shown. [Figure 2] A separated perspective view showing the laminated structure of the internal electrodes is schematically shown. [Figure 3] A cross-sectional view taken along line I-I' of FIG. 1 is schematically shown. [Figure 4] It schematically shows a cross-sectional view taken along the line II-II' of FIG. 1. [Figure 5] It schematically shows a cross-sectional view taken along the line II-II' of FIG. 1 according to another embodiment of the present invention. [Figure 6] It schematically shows an enlarged view of the P region in FIG. 3. [Figure 7] It is an image obtained by photographing a cross-section of a capacitance forming portion of an embodiment of the present invention with a scanning electron microscope (SEM). [Figure 8] It shows a graph of the life (aging) characteristics due to heat generation in a test example.

Embodiments for Carrying out the Invention

[0020] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into several other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to an ordinary technician. Therefore, the shape and size of elements in the drawings may be enlarged, reduced (or emphasized or simplified) for clearer explanation, and elements denoted by the same reference numerals in the drawings are the same elements.

[0021] In addition, for the purpose of clearly explaining the present invention in the drawings, parts not related to the explanation are omitted, and the sizes and thicknesses of the illustrated configurations are arbitrarily shown for convenience of explanation, so the present invention is not necessarily limited by the illustration. Also, components having the same function within the scope of the same idea are described using the same reference numerals. Furthermore, throughout the specification, when a certain part "includes" a certain component, it means that other components can be further included, rather than excluding other components, unless there is a particularly contrary description.

[0022] In drawings, the Z direction can be defined as the first direction, the lamination direction, or the thickness T direction; the X direction as the second direction or the length L direction; and the Y direction as the third direction or the width W direction.

[0023] Multilayer electronic components Figure 1 schematically shows a perspective view of a stacked electronic component according to one embodiment of the present invention, Figure 2 schematically shows a separated perspective view showing the stacked structure of the internal electrodes, Figure 3 schematically shows a cross-sectional view along the line I-I' in Figure 1, Figure 4 schematically shows a cross-sectional view along the line II-II' in Figure 1, Figure 5 schematically shows a cross-sectional view along the line II-II' in Figure 1 according to another embodiment of the present invention, and Figure 6 schematically shows an enlarged view of region P in Figure 3.

[0024] Hereinafter, with reference to Figures 1 to 6, a multilayer electronic component according to one embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of a multilayer electronic component, the present invention can also be applied to various electronic products that utilize dielectric compositions, such as inductors, piezoelectric elements, varistors, or thermistors.

[0025] A stacked electronic component 100 according to one embodiment of the present invention includes a main body 110 including a dielectric layer 111 mainly composed of (Ca, Sr)(Zr, Ti)O3, and internal electrodes 121 and 122 arranged alternately with the dielectric layer 111, and external electrodes 131 and 132 arranged on the main body 110, wherein the dielectric layer 111 contains a first secondary phase 141 containing rare earth elements (RE), zirconium (Zr), and oxygen (O) at an area percentage of 0.1% to 10% of the cross-sectional area of ​​the dielectric layer 111, and the internal electrodes 121 and 122 may contain a second secondary phase 142 containing nickel (Ni) and oxygen (O) at an area percentage of 0.5% to 10% of the cross-sectional area of ​​the internal electrodes 121 and 122.

[0026] Furthermore, a stacked electronic component 100 according to another embodiment of the present invention includes a main body 110 including a dielectric layer 111 mainly composed of a perovskite structure (ABO3) dielectric material, and internal electrodes 121 and 122 arranged alternately with the dielectric layer 111, and external electrodes 131 and 132 arranged on the main body 110, wherein the dielectric layer 111 contains a first secondary phase 141 containing rare earth elements (RE) and the B-site elements at an area percentage of 0.1% to 10% of the cross-sectional area of ​​the dielectric layer 111, and the internal electrodes 121 and 122 may contain a second secondary phase containing the main component metal of the internal electrodes 121 and 122 at an area percentage of 0.5% to 10% of the cross-sectional area of ​​the internal electrodes 121 and 122.

[0027] The main body 110 may have dielectric layers 111 and internal electrodes 121 and 122 stacked alternately.

[0028] More specifically, the main body 110 may include a capacitance forming section Ac which is located inside the main body 110 and includes a first internal electrode 121 and a second internal electrode 122 that are alternately arranged facing each other with a dielectric layer 111 in between, thereby forming a capacitance.

[0029] There are no particular restrictions on the specific shape of the main body 110, but as shown in the figure, the main body 110 can be hexahedral or a similar shape. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 may not be a perfectly straight hexahedron, but it may be substantially hexahedral.

[0030] The main body 110 may have a first and second surface 1, 2 that face each other in the first direction, a third and fourth surface 3, 4 that face each other in the second direction, a fifth and sixth surface 5, 6 that face each other in the third direction.

[0031] The multiple dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to such an extent that they are difficult to confirm without using a scanning electron microscope (SEM).

[0032] Recently, as the demand for products that can minimize equivalent series resistance (ESR) in high-voltage environments, satisfy C0G characteristics with a high Q (Quality Factor), and minimize heat generation increases, it has become necessary to design the optimal composition ratio.

[0033] Here, the Q value can be expressed as Q = 1 / DF = (1 / ESR) * (1 / ωC) (where ω = 2πf), and it corresponds to the reciprocal of the dielectric loss (Dissipation Factor, DF). On the other hand, dielectric loss is also called dielectric loss tangent and can be expressed as loss tangent (tanδ). The definition of dielectric loss is the time rate at which electrical energy is converted into heat inside a dielectric when an electric field that changes over time is applied.

[0034] The C0G characteristic can also refer to the C0G characteristic as defined by the EIA standard, which is the capacitance value at 25°C (C) within the temperature range of -55°C to 125°C. at25℃ The capacitance change rate (ΔC) is calculated using the temperature coefficient α(10 -6 A COG value of 0 (ΔC / C) indicates that the tolerance for the temperature coefficient is ±30 ppm. In other words, the COG characteristic is ΔC / C in the temperature range of -55°C to 125°C. at25℃ This can be interpreted as satisfying the condition (0 ± 30 ppm) / ℃.

[0035] The raw material for forming the dielectric layer 111 can contain calcium (Ca) and strontium (Sr) as A-site elements and zirconium (Zr) and titanium (Ti) as B-site elements among perovskite (ABO3)-type dielectric substances in order to satisfy the COG characteristics. That is, the dielectric layer 111 can contain a (Ca, Sr)(Zr, Ti)O3 (CSZT) dielectric substance as the main component.

[0036] At this time, when the ratio of calcium (Ca) in the A-site of the perovskite (ABO3)-type structure of the dielectric layer 111 is defined as x, the ratio of strontium (Sr) is defined as 1 - x, the ratio of zirconium (Zr) in the B-site of the perovskite structure is defined as y, and the ratio of titanium (Ti) is defined as 1 - y, x can be greater than 0 and less than or equal to 0.5, or y can be greater than 0 and less than or equal to 0.5. In other words, (Ca, Sr)(Zr, Ti)O3 can satisfy the chemical formula (Ca 1-x , Sr x )(Zr 1-y , Ti y )O3 (0 < x ≤ 0.5, 0 < y ≤ 0.5).

[0037] Since the dielectric layer 111 can be formed using a perovskite (ABO3)-type dielectric substance such as (Ca, Sr)(Zr, Ti)O3, it can contain a dielectric microstructure after firing. The dielectric microstructure can include a plurality of crystal grains, grain boundaries disposed between adjacent crystal grains, and triple points disposed at points where three or more grain boundaries meet, and there may be a plurality of crystal grains, grain boundaries, and triple points.

[0038] At this time, the crystal grains contained in the dielectric layer 111 can have a (Ca, Sr)(Zr, Ti)O3 dielectric substance as the crystal lattice structure, the lower limit value of the average size of the crystal grains is 0.1 μm or more, and the upper limit value can be 5 μm or less, 3 μm or less, or 2 μm or less.

[0039] The average size of the crystal grains can be obtained by measuring the average size of the crystal grains contained in the dielectric layer 111 of the capacitance-forming part Ac of the main body 110, based on an image taken via a scanning electron microscope (SEM) of a 30 μm × 20 μm area (dimension in the second direction × dimension in the first direction) of the cross-section (cross-section) of the capacitance-forming part Ac in the first and second directions. More specifically, the average size of the crystal grains can be obtained by measuring the major and minor diameters passing through the center of one crystal grain and then calculating the average value. By extending the average size of multiple crystal grains obtained in this manner, the average size of the crystal grains can be obtained. However, this is not particularly limited, and the average size of the crystal grains can be obtained by any method or program (e.g., "ImageJ") capable of obtaining the average size of crystal grains, or by using a size measurement program built into a scanning electron microscope (SEM), etc.

[0040] On the other hand, in the present invention, "main component" can mean a component that accounts for a relatively large weight ratio or atomic number ratio compared to other components, and based on this composition, it can mean a component whose weight exceeds 50 wt%, a component whose number of atoms or atomic percentage exceeds 50 at%, or a component whose moles exceed 50 mol%.

[0041] Furthermore, as a more specific example of a method for measuring the elemental content of each component of the stacked electronic component 100 in the present invention, in the case of destructive methods, the components can be analyzed using the EDS mode of a scanning electron microscope (SEM), the EDS mode of a transmission electron microscope (TEM), or the EDS mode of a scanning transmission electron microscope (STEM). Taking the dielectric layer 111 as an example, an analytical sample is prepared by thinning the cross-section of the sintered dielectric layer 111 using a focused ion beam (FIB) in the region containing dielectric microstructures such as dielectric crystal grains. Then, the damaged layer on the surface of the thinned sample is removed using xenon (Xe) or argon (Ar) ion milling, and after that, qualitative / quantitative analysis is performed by mapping each component to be measured using an image obtained with SEM-EDS, TEM-EDS, or STEM-EDS. In this case, the qualitative / quantitative analysis graphs for each component can also be shown converted to the mass percentage (wt%), atomic percentage (at%), or mole percentage (mol%) of each element. Furthermore, the number of moles of one specific component can be shown in relation to the number of moles of another specific component.

[0042] Another method involves crushing the chip to separate the regions containing dielectric microstructures, and then analyzing the components of these separated regions containing dielectric microstructures using instruments such as inductively coupled plasma spectrometers (ICP-OES) and inductively coupled plasma mass spectrometers (ICP-MS).

[0043] Furthermore, the raw materials for forming the dielectric layer 111 can include CSZT dielectric particles to which various additives, organic solvents, binders, dispersants, etc., can be added according to the purpose of the present invention, and the additives can be detected as minor components in the dielectric layer 111.

[0044] In the present invention, "minor component" can mean a component that occupies a relatively small weight ratio or atomic number ratio compared to other components, and based on this configuration, it can mean a component with a weight of less than 50 wt%, a component with an atomic number or atomic percentage of less than 50 at%, or a component with a mole number of less than 50 mol%.

[0045] The minor components may include a first minor component (element) containing rare earth elements (RE).

[0046] Here, the rare earth element (RE) may include at least one of yttrium (Y), cerium (Ce), lanthanum (La), praseodymium (Pr), and neodymium (Nd), preferably at least one of yttrium (Y), cerium (Ce), lanthanum (La), praseodymium (Pr), and neodymium (Nd), and more preferably yttrium (Y).

[0047] Rare earth elements (RE) can improve reliability and can react with the main component to form the first secondary phase 141 described later.

[0048] The content of the first minor component is not particularly limited, however, in at least a portion of the dielectric layer 111, the content of the first minor component may be 0.1 moles or more and 2.0 moles or less per 100 moles of the main component, or 0.1 moles or more and 2.0 moles or less per 100 moles of the B-site of the main component of the perovskite (ABO3) structure. Here, the content of the first minor component can mean the number of moles of the first minor component element.

[0049] By having the dielectric layer 111 contain 0.1 moles to 2.0 moles of the first minor component relative to 100 moles of the main component, the grain growth of the crystal grains contained in the dielectric layer 111 can be controlled, the size distribution can be made uniform, and thereby reliability can be improved.

[0050] The dielectric layer 111 may include a primary secondary phase 141 containing rare earth elements (RE) and B-site elements with a perovskite structure (ABO3). More specifically, the dielectric layer 111 may include a primary secondary phase 141 containing rare earth elements (RE), zirconium (Zr), and oxygen (O).

[0051] More specifically, for example, the primary secondary phase 141 may include at least one of RE2Zr2O7, REZrO3, E2ZrO5, and RE-doped ZrO2, but is not particularly limited thereto. The primary secondary phase 141 may include any of the elements that stoichiometrically satisfy the requirements for rare earth elements (RE), zirconium (Zr), and oxygen (O).

[0052] The first secondary phase 141 may be the result of a reaction between a first minor component containing a rare earth element (RE) and the main components zirconium (Zr) and oxygen (O).

[0053] By including the first secondary phase 141 in an appropriate area within the dielectric layer 111, the movement of charge within the dielectric layer 111 can be suppressed, preventing a decrease in insulation resistance (IR). Such a first secondary phase 141 can form an interface like a grain boundary, and a depletion layer, which is a space charge layer with a high concentration of ions or electrons, can be formed. This allows the resistance value of the first secondary phase 141 to be greater than the resistance value within the crystal grains. As a result, the tunneling phenomenon of charge carriers due to thermal ion activation is suppressed, and thus an improvement in reliability can be expected.

[0054] In this case, the dielectric layer 111 may contain the first secondary phase 141 in an area percentage of 0.1% to 10% of the cross-sectional area of ​​the dielectric layer 111.

[0055] The first secondary phase 141 can be observed by the following methods, but is not limited thereto. More specifically, for example, when an EDS analysis is performed on a 30 μm × 20 μm (dimension in the second direction × dimension in the first direction) cross-section of the capacitance forming portion (Ac) of the main body 110 using a scanning electron microscope (SEM), transmission electron microscope (TEM), or scanning transmission electron microscope (STEM), the secondary phase containing rare earth elements (RE), zirconium (Zr), and oxygen (O) within the dielectric layer 111 can be interpreted as the first secondary phase 141.

[0056] In this invention, "secondary-phase" can mean particles or segregation having a different composition or crystal lattice from perovskite-based (ABO3) dielectric particles.

[0057] The area percentage of the first secondary phase 141 relative to the cross-sectional area of ​​the dielectric layer 111 can be obtained by the following method, but is not limited thereto. More specifically, an image of 30 μm × 20 μm (dimension in the second direction × dimension in the first direction) of the cross-section (cross-section) of the capacitance forming part Ac of the main body 110, taken via a scanning electron microscope (SEM) or the like (SEM, TEM, STEM), is used as a reference. After obtaining the areas of the dielectric layer 111 and the first secondary phase 141 using a program (for example, "ImageJ" or "a program built into the scanning electron microscope (SEM)"), the area of ​​the first secondary phase 141 can be obtained by converting it to a percentage relative to the area of ​​the dielectric layer 111.

[0058] In this case, the lower limit of the average size of the first secondary phase 141 may be 0.1 μm or more, and the upper limit may be 5 μm or less, 3 μm or less, or 2 μm or less. On the other hand, multiple first secondary phases 141 may be included in the dielectric layer 111, and the lower limit of the average size of each of the multiple first secondary phases 141 may be 0.1 μm or more, and the upper limit may be 5 μm or less, 3 μm or less, or 2 μm or less. When the dielectric layer 111 includes multiple first secondary phases 141, the area percentage of the first secondary phases 141 to the cross-sectional area of ​​the dielectric layer 111 can be the value obtained by converting the total area of ​​the multiple first secondary phases 141 included in the region to a percentage of the cross-sectional area of ​​the dielectric layer 111 in that region.

[0059] The size of the first secondary phase 141 can be obtained by the average size of the crystal grains or by the method for obtaining the average size of the crystal grains described above, but is not limited to these methods.

[0060] By including the first secondary phase 141 in the dielectric layer 111 at an area percentage of 0.1% to 10% of the cross-sectional area of ​​the dielectric layer 111, high-temperature reliability and insulation resistance (IR) characteristics can be improved, and a high Q value can be achieved.

[0061] If the dielectric layer 111 contains the first secondary phase 141 at an area percentage of less than 0.1% of the cross-sectional area of ​​the dielectric layer 111, the high-temperature reliability or insulation resistance (IR) characteristics may not be sufficiently improved. If the dielectric layer 111 contains the first secondary phase 141 at an area percentage exceeding 10% of the cross-sectional area of ​​the dielectric layer 111, the COG characteristics may not be met.

[0062] The minor components may include a second minor component (element) containing a transition metal.

[0063] Here, the transition metal may include variable valence acceptor elements, preferably at least one of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), and zinc (Zn), and more preferably at least one of manganese (Mn), iron (Fe), nickel (Ni), and zinc (Zn).

[0064] The second subcomponent can impart reduction resistance, improve the densification of the dielectric microstructure, and maintain a stable high-temperature accelerated lifetime. It can also react with the main component or other subcomponents (e.g., the third subcomponent) to form the third secondary phase 143 described later.

[0065] The content of the second minor component is not particularly limited, but in at least a portion of the dielectric layer 111, the content of the second minor component may be 0.1 moles or more and 2.0 moles or less per 100 moles of the main component, or 0.1 moles or more and 2.0 moles or less per 100 moles of the B-site of the main component of the perovskite (ABO3) structure. Here, the content of the second minor component can mean the number of moles of the second minor component element.

[0066] The minor components may include a third minor component (element) containing silicon (Si). More specifically, for example, the third minor component may include glass containing silicon (Si). In this case, if the third minor component contains glass, it may have a substantially amorphous shape or a crystalline lattice structure, and can be defined as a secondary phase in this invention.

[0067] The third minor component can act as a sintering aid, lowering the sintering temperature and reacting with the main component or other minor components (e.g., the second minor component) to promote sinterability, thereby forming the third secondary phase 143 described later.

[0068] The content of the third minor component is not particularly limited, however, in at least a portion of the dielectric layer 111, the content of the third minor component may be 0.1 moles or more and 2.0 moles or less per 100 moles of the main component, or 0.1 moles or more and 2.0 moles or less per 100 moles of the B-site of the main component of the perovskite (ABO3) structure. Here, the content of the third minor component can refer to the number of moles of the third minor component element.

[0069] The dielectric layer 111 may include a tertiary secondary phase 143 containing a second and a third minor component. That is, the dielectric layer 111 may include a tertiary secondary phase 143 containing a transition metal and silicon (Si). The tertiary secondary phase 143 may be the result of a reaction between a second minor component containing a transition metal and a third minor component containing silicon (Si), or it may be the result of the second minor component containing a transition metal being contained in the material of the third minor component containing silicon (Si), i.e., amorphous glass.

[0070] The third secondary phase 143 can be observed by the following methods, but is not limited thereto. More specifically, for example, when an EDS analysis is performed on a 30 μm × 20 μm (dimension in the second direction × dimension in the first direction) cross-section of the capacitance forming portion (Ac) of the main body 110 using a scanning electron microscope (SEM), transmission electron microscope (TEM), or scanning transmission electron microscope (STEM), the secondary phase containing the transition metal and silicon (Si) within the dielectric layer 111 can be interpreted as the third secondary phase 143.

[0071] In this case, the dielectric layer 111 may contain the third secondary phase 143 in an area percentage of 0.1% to 5% of the cross-sectional area of ​​the dielectric layer 111.

[0072] The area percentage of the third secondary phase 143 relative to the cross-sectional area of ​​the dielectric layer 111 is the same as the method for obtaining the area percentage of the first secondary phase 141 relative to the cross-sectional area of ​​the dielectric layer 111 described above, and is therefore omitted.

[0073] In this case, the tertiary phase 143 can have a size of 0.1 μm or more and 2 μm or less, and multiple tertiary phases 143 can be included in the dielectric layer 111. When the dielectric layer 111 includes multiple tertiary phases 143, the area percentage of the tertiary phase 143 to the cross-sectional area of ​​the dielectric layer 111 is the value obtained by converting the total area of ​​the multiple tertiary phases 143 included in the region to a percentage of the cross-sectional area of ​​the dielectric layer 111 in that region.

[0074] The size of the third secondary phase 143 can be obtained by the average size of the crystal grains or by the method for obtaining the average size of the crystal grains described above, but is not limited to these methods.

[0075] By including the third secondary phase 143 in the dielectric layer 111 at an area percentage of 0.1% to 5% of the cross-sectional area of ​​the dielectric layer 111, the density can be improved, increasing the sintering density and suppressing the formation of pores.

[0076] If the dielectric layer 111 contains the tertiary phase 143 at an area percentage of less than 0.1% of the cross-sectional area of ​​the dielectric layer 111, low-temperature firing may be difficult, and the density may not be sufficiently improved. If the dielectric layer 111 contains the tertiary phase 143 at an area percentage exceeding 5% of the cross-sectional area of ​​the dielectric layer 111, the dielectric properties may deteriorate, excessive sintering shrinkage may suppress grain growth, potentially leading to further pore formation, or the COG (Cell Grain Grain) properties may not be achieved.

[0077] On the other hand, in order to distinguish it from the dielectric layers included in the cover portions 112, 113 and the side margin portions 114, 115 described later, the dielectric layer included in the capacitance forming portion Ac can be defined as the first dielectric layer 111, the dielectric layers included in the cover portions 112, 113 can be defined as the second dielectric layer, and the dielectric layers included in the side margin portions 114, 115 can be defined as the third dielectric layer.

[0078] In this case, the dielectric material contained in the second and third dielectric layers may be the same dielectric material as the perovskite (ABO3)-based (e.g., CSZT) material contained in the first dielectric layer 111, but is not particularly limited thereto. Similarly, to improve mechanical and electrical properties, barium titanate (BaTiO3)-based dielectric material or barium zirconium oxide (BaZrO3) may be included, but is not particularly limited thereto.

[0079] Furthermore, the second and third dielectric layers can be formed using a dielectric material such as perovskite (ABO3), similar to the first dielectric layer 111, and can therefore contain a dielectric microstructure after firing. The dielectric microstructure may include multiple crystal grains, grain boundaries located between adjacent crystal grains, and triple points located at points where three or more grain boundaries meet, and there may be multiple crystal grains, grain boundaries, and triple points.

[0080] The dimension td of the dielectric layer 111 in the first direction does not need to be particularly limited.

[0081] To ensure the reliability of the multilayer electronic component 100 in a high-voltage environment, the dimension td of the dielectric layer 111 in the first direction may be 10 μm or less (td ≤ 10 μm). Furthermore, to achieve miniaturization and high capacitance of the multilayer electronic component 100, the dimension td of the dielectric layer 111 in the first direction may be 3 μm or less. To more easily achieve ultra-miniaturization and high capacitance, the dimension td of the dielectric layer 111 in the first direction may be 1 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0082] Here, the dimension td of the dielectric layer 111 in the first direction can mean the dimension td of the dielectric layer 111 in the first direction that is positioned between the first and second internal electrodes 121 and 122.

[0083] On the other hand, the dimension td of the dielectric layer 111 in the first direction can mean the dimension, distance, size, or length of the dielectric layer 111 in the first direction, or it can mean the thickness of the dielectric layer.

[0084] In this case, the dimension td of the dielectric layer 111 in the first direction may be a concept that includes the dimension td of at least one of the multiple dielectric layers 111 in the first direction, or it may be a concept that includes the dimension td of each of the dielectric layers 111 in the first direction.

[0085] Furthermore, the dimension td of the dielectric layer 111 in the first direction can mean the average dimension td of one dielectric layer 111 in the first direction, the average dimension td of each of multiple dielectric layers 111 in the first direction, or the average dimension td of multiple dielectric layers 111 in the first direction.

[0086] The average dimension td of the dielectric layer 111 in the first direction can be measured by scanning the cross-sections of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average dimension td of one dielectric layer 111 in the first direction can mean the average value calculated by measuring the dimension in the first direction at five equally spaced points in the second direction of one dielectric layer 111 in the scanned image. These five equally spaced points can be specified in the capacitance forming section Ac. Furthermore, by extending this average value measurement to three dielectric layers 111 and measuring the average values, the average dimension td of multiple dielectric layers 111 in the first direction can be further generalized.

[0087] The internal electrodes 121 and 122 may be stacked alternately with the dielectric layer 111.

[0088] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122, and the first and second internal electrodes 121 and 122 are arranged alternately facing each other across the dielectric layer 111 that constitutes the main body 110, and can be exposed on the third and fourth surfaces 3 and 4 of the main body 110, respectively.

[0089] More specifically, the first internal electrode 121 can be separated from the fourth surface 4 and exposed via the third surface 3, and the second internal electrode 122 can be separated from the third surface 3 and exposed via the fourth surface 4. The first external electrode 131 can be positioned on the third surface 3 of the main body 110 and connected to the first internal electrode 121, and the second external electrode 132 can be positioned on the fourth surface 4 of the main body 110 and connected to the second internal electrode 122.

[0090] In other words, the first internal electrode 121 is not connected to the second external electrode 132, but can be connected to the first external electrode 131, and the second internal electrode 122 is not connected to the first external electrode 131, but can be connected to the second external electrode 132. In this case, the first and second internal electrodes 121 and 122 can be electrically isolated from each other by the dielectric layer 111 placed in between.

[0091] On the other hand, the main body 110 can be formed by alternately stacking a first ceramic green sheet printed with a paste for the first internal electrode, which will become the first internal electrode 121, and a second ceramic green sheet printed with a paste for the second internal electrode, which will become the second internal electrode 122, and then firing them.

[0092] The materials forming the internal electrodes 121 and 122 are not particularly limited, and any material with excellent electrical conductivity can be used as the main component metal. For example, the internal electrodes 121 and 122 may contain one or more of the following: nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0093] Furthermore, the internal electrodes 121 and 122 can be formed by printing a conductive paste for internal electrodes containing one or more of the following onto a ceramic green sheet: nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. The printing method for the conductive paste for internal electrodes can be screen printing or gravure printing, but the present invention is not limited thereto.

[0094] On the other hand, the internal electrodes 121 and 122 may include a secondary phase 142 containing the main component metal of the internal electrodes 121 and 122. More specifically, the internal electrodes 121 and 122 may include a secondary phase 142 containing nickel (Ni) and oxygen (O).

[0095] The second secondary phase 142 may be located inside the internal electrodes 121, 122, in the portion where the internal electrodes 121, 122 are broken, or at the interface between the internal electrodes 121, 122 and the adjacent dielectric layer 111, and the internal electrodes 121, 122 may be located in contact with at least one of the two faces that face each other in the first direction.

[0096] Here, the main component metals of the internal electrodes 121 and 122 may include one or more of the above-mentioned nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0097] More specifically, for example, the secondary phase 142 may include at least one of NiO, Ni2O3, and Ni3O4, but is not particularly limited thereto, and the secondary phase 142 may include any that stoichiometrically satisfy the main component metal and oxygen (O) of the internal electrode.

[0098] By having the internal electrodes 121 and 122 contain the second secondary phase 142 in an appropriate area, the current flow within the internal electrodes 121 and 122 can be controlled, thereby suppressing thermal aging phenomena, such as degradation due to heat generation.

[0099] The second secondary phase 142 can be observed in the following ways, but is not limited thereto. More specifically, for example, when an EDS analysis is performed on a 30 μm × 20 μm (dimension in the second direction × dimension in the first direction) cross-section of the volume-forming portion Ac of the main body 110 in the first and second directions using a scanning electron microscope (SEM), transmission electron microscope (TEM), or scanning transmission electron microscope (STEM), the secondary phase containing nickel (Ni) and oxygen (O) within the internal electrodes 121 and 122 can be interpreted as the second secondary phase 142.

[0100] In this case, the internal electrodes 121 and 122 may contain the second secondary phase 142 in an area percentage of 0.5% to 10% of the cross-sectional area of ​​the internal electrodes 121 and 122.

[0101] The area percentage of the second secondary phase 142 relative to the cross-sectional area of ​​the internal electrodes 121 and 122 is the same as the method for obtaining the area percentage of the first secondary phase 141 relative to the cross-sectional area of ​​the dielectric layer 111 described above, so it is omitted.

[0102] In this case, the lower limit of the average size of the secondary phase 142 is 0.1 μm or more, and the upper limit may be 5 μm or less, 3 μm or less, or 2 μm or less. On the other hand, multiple secondary phases 142 may be included in the internal electrodes 121, 122, and the lower limit of the average size of each of the multiple secondary phases 141 may be 0.1 μm or more, and the upper limit may be 5 μm or less, 3 μm or less, or 2 μm or less. When the internal electrodes 121, 122 include multiple secondary phases 142, the area percentage of the secondary phase 142 to the cross-sectional area of ​​the internal electrodes 121, 122 can be the value obtained by converting the total area of ​​the multiple secondary phases 142 included in the region to a percentage of the cross-sectional area of ​​the internal electrodes 121, 122 in that region.

[0103] The size of the second secondary phase 142 can be obtained by the average size of the crystal grains or by the method for obtaining the average size of the crystal grains described above, but is not limited to these methods.

[0104] Since the internal electrodes 121 and 122 contain the second secondary phase 142 in an area percentage of 0.5% to 10% of the cross-sectional area of ​​the internal electrodes 121 and 122, heat generation can be suppressed, thereby improving high-temperature lifetime reliability.

[0105] If the internal electrodes 121 and 122 contain the secondary phase 142 at an area percentage of less than 0.5% of the cross-sectional area of ​​the internal electrodes 121 and 122, the high-temperature lifetime reliability may decrease due to an increase in thermal aging. If the internal electrodes 121 and 122 contain the secondary phase 142 at an area percentage exceeding 10% of the cross-sectional area of ​​the internal electrodes 121 and 122, the excessive secondary phase 142 may hinder the current flow in the internal electrodes 121 and 122, potentially degrading the electrical characteristics and preventing the achievement of a high Q value.

[0106] Furthermore, the dimension te of the internal electrodes 121 and 122 in the first direction does not need to be particularly limited, and in the following description of the dimension te of the internal electrodes 121 and 122 in the first direction can refer to the dimension te of the first internal electrode 121 and the second internal electrode 122, respectively.

[0107] To ensure the reliability of the multilayer electronic component 100 in a high-voltage environment, the dimension te of the internal electrodes 121 and 122 in the first direction may be 3 μm or less. Furthermore, to achieve miniaturization and high capacitance of the multilayer electronic component 100, the dimension te of the internal electrodes 121 and 122 in the first direction may be 1 μm or less. To more easily achieve ultra-miniaturization and high capacitance, the dimension te of the internal electrodes 121 and 122 in the first direction may be 0.6 μm or less, and more preferably 0.4 μm or less.

[0108] In this case, the dimension te of the internal electrodes 121 and 122 in the first direction may be a concept that includes the dimension te of at least one of the multiple internal electrodes 121 and 122 in the first direction, or it may be a concept that includes the dimension te of all internal electrodes 121 and 122 in the first direction.

[0109] Here, the dimension te of the internal electrodes 121 and 122 in the first direction can mean the dimension, distance, size, or length of the internal electrodes 121 and 122 in the first direction, or it can mean the thickness of the internal electrodes 121 and 122.

[0110] In this case, the dimension te of the internal electrodes 121 and 122 in the first direction may be a concept that includes the dimension te of at least one of the multiple internal electrodes 121 and 122 in the first direction, or it may be a concept that includes the dimension te of each of the internal electrodes 121 and 122 in the first direction.

[0111] Furthermore, the dimension te of the internal electrodes 121 and 122 in the first direction can mean the average dimension te of one of the internal electrodes 121 and 122 in the first direction, or the average dimension te of each of the multiple internal electrodes 121 and 122 in the first direction, or the average dimension te of the multiple internal electrodes 121 and 122 in the first direction.

[0112] The average dimension te of the internal electrodes 121 and 122 in the first direction can be measured by scanning the cross-sections of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average dimension te of one internal electrode 121 or 122 may be the average value calculated by measuring the dimension in the first direction at five equally spaced points in the second direction of one internal electrode in the scanned image. These five equally spaced points can be specified in the capacitance forming section Ac. Furthermore, by extending this average value measurement to three internal electrodes 121 or 122 and measuring the average values, the average dimension te of multiple internal electrodes 121 or 122 in the first direction can be further generalized.

[0113] On the one hand, in one embodiment of the present invention, at least one first-direction dimension td of the plurality of dielectric layers 111 and at least one first-direction dimension te of the plurality of internal electrodes 121, 122 can satisfy 2 × te < td.

[0114] In other words, one first-direction dimension td of the dielectric layer 111 may be even larger than twice the one first-direction dimension te of the internal electrodes 121, 122. Preferably, the average dimension td in the first direction of the plurality of dielectric layers 111 may be even larger than twice the average dimension te in the first direction of the plurality of internal electrodes 121, 122.

[0115] Generally, for high-voltage electrical components, the main issue is the reliability problem due to the decrease in the breakdown voltage (BDV) under a high-voltage environment.

[0116] Therefore, in order to prevent the decrease in the breakdown voltage under a high-voltage environment, by making the average dimension td in the first direction of the dielectric layer 111 even larger than twice the average dimension te in the first direction of the internal electrodes 121, 122, the characteristics of the breakdown voltage can be improved.

[0117] When the average dimension td in the first direction of the dielectric layer 111 is less than or equal to twice the average dimension te in the first direction of the internal electrodes 121, 122, the breakdown voltage may decrease, and there may be a possibility of a short circuit between the internal electrodes.

[0118] On the other hand, the main body 110 can include cover portions 112, 113 disposed on both end-surfaces in the first direction of the capacitance forming portion Ac.

[0119] Specifically, it can include a first cover portion 112 disposed on one surface in the first direction of the capacitance forming portion Ac and a second cover portion 113 disposed on the other surface in the second direction of the capacitance forming portion Ac. More specifically, for example, it can include a first cover portion 112 disposed on the upper part in the first direction of the capacitance forming portion Ac and a second cover portion 113 disposed on the lower part in the first direction of the capacitance forming portion Ac.

[0120] The first cover portion 112 and the second cover portion 113 can be formed by arranging or stacking a single second dielectric layer or two or more second dielectric layers in a first direction on the upper and lower surfaces of the capacitance forming portion Ac, respectively, and can basically serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress, and the first cover portion 112 and the second cover portion 113 do not necessarily have to include the internal electrodes 121 and 122.

[0121] Furthermore, the dimension tc of the cover portions 112 and 113 in the first direction does not need to be particularly limited, and in the following description of the dimension tc of the cover portions 112 and 113 in the first direction, it may mean the dimension tc of the first cover portion 112 and the second cover portion 113, respectively.

[0122] However, in order to more easily achieve miniaturization and high capacity of the stacked electronic component 100, the dimension tc of the cover portions 112 and 113 in the first direction may be 100 μm or less or 50 μm or less, preferably 30 μm or less, and more preferably 20 μm or less for ultra-small products.

[0123] Here, the dimension tc of the cover portions 112 and 113 in the first direction can mean the dimension of the cover portions 112 and 113 in the first direction.

[0124] Furthermore, the dimension tc of the cover portions 112 and 113 in the first direction may mean the average dimension tc of the first and second cover portions 112 and 113 in the first direction, or it may mean the average dimension tc of the first and second cover portions 112 and 113 in the first direction.

[0125] The average dimension tc of the cover portions 112 and 113 in the first direction can be measured by scanning the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the dimension in the first direction at five equally spaced points in the second direction in an image scanned from one cover portion 112 or 113.

[0126] Furthermore, the average dimension tc of the cover portions 112 and 113 in the first direction, measured by the method described above, can be substantially the same as the average dimension of the cover portions 112 and 113 in the first direction in the cross-sections of the main body 110 in the first and third directions.

[0127] On the other hand, the stacked electronic component 100 may include side margin regions 114' and 115', which are the areas between the third-direction ends of the internal electrodes 121 and 122 and the adjacent surfaces of the body 110.

[0128] More specifically, the side margin regions 114' and 115' may include a first side margin region 114' located between the internal electrodes 121 and 122 and the fifth surface 5, and a second side margin region 115' located between the internal electrodes 121 and 122 and the sixth surface 6.

[0129] As shown in the figure, the side margin regions 114' and 115' can refer to the regions between the interface between the first and second internal electrodes 121 and 122 in the third direction and the interface surface of the main body 110, with respect to the cross-sections of the main body 110 in the first and third directions.

[0130] The side margin regions 114' and 115' can be interpreted as the ceramic green sheet region excluding the internal electrodes 121 and 122 when the paste for the internal electrodes is applied to the ceramic green sheet applied to the volume-forming portion Ac, excluding the areas that constitute the side margin regions 114' and 115'.

[0131] The side margin regions 114' and 115' essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress, and the first side margin region 114' and the second side margin region 115' do not necessarily have to include the internal electrodes 121 and 122.

[0132] Furthermore, the third-direction dimension wm' of the side margin regions 114' and 115' does not need to be particularly limited, and in the following description, the third-direction dimension wm' of the side margin regions 114' and 115' can mean the third-direction dimension wm' of the first side margin region 114' and the second side margin region 115', respectively.

[0133] To more easily achieve miniaturization and increased capacitance of the stacked electronic component 100, the third-direction dimension wm' of the side margin regions 114' and 115' may be 50 μm or less, preferably 30 μm or less, and more preferably 20 μm or less for ultra-small products.

[0134] Here, the third-direction dimension wm' of the side margin regions 114', 115' can mean the dimension, distance, size, or length of the side margin regions 114', 115' in the third direction, or it can mean the width of the side margin regions 114', 115'.

[0135] Furthermore, the third-direction dimension wm' of the side margin regions 114' and 115' can mean the average third-direction dimension wm' of the first and second side margin regions 114' and 115', respectively, or the average third-direction dimension wm' of the first and second side margin regions 114' and 115'.

[0136] The average dimension wm' in the third direction of the side margin regions 114' and 115' can be measured by scanning the cross-sections of the main body 110 in the first and third directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the dimension in the third direction at five equally spaced points in the first direction in an image scanned from one side margin region 114', 115'.

[0137] On the other hand, the stacked electronic component 100 may include side margin portions 114 and 115 arranged on both end surfaces (end-surfaces) of the main body 110 in the third direction.

[0138] More specifically, the side margins 114 and 115 may include a first side margin 114 located on the fifth surface 5 of the main body 110 and a second side margin 115 located on the sixth surface 6 of the main body 110.

[0139] Except for the side margin portions 114 and 115 which are formed on the ceramic green sheet applied to the capacitance forming portion Ac, conductive paste is applied to form the internal electrodes 121 and 122. In order to suppress the step caused by the internal electrodes 121 and 122, the laminated internal electrodes 121 and 122 are cut so that they are exposed on the fifth and sixth surfaces 5 and 6 of the main body 110, and then a single third dielectric layer or two or more third dielectric layers can be formed by arranging or laminating them in the third direction on both end surfaces (end-surfaces) of the capacitance forming portion Ac in the third direction.

[0140] The side margins 114 and 115 essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress, and the first side margin 114 and the second side margin 115 do not necessarily have to include the internal electrodes 121 and 122.

[0141] Furthermore, the third-direction dimension wm of the side margin portions 114 and 115 does not need to be particularly limited, and in the following description of the third-direction dimension wm of the side margin portions 114 and 115, it can refer to the third-direction dimension wm of the first side margin portion 114 and the second side margin portion 115, respectively.

[0142] However, in order to more easily achieve miniaturization and high capacitance of the stacked electronic component 100, the dimension wm of the side margin portions 114 and 115 in the third direction may be 50 μm or less, preferably 30 μm or less, and more preferably 20 μm or less for ultra-small products.

[0143] Here, the third-direction dimension wm of the side margin portions 114 and 115 may mean the dimension, distance, size, or length of the side margin portions 114 and 115 in the third direction, or it may mean the width of the side margin portions 114 and 115.

[0144] Furthermore, the dimension wm of the side margin portions 114 and 115 in the third direction may mean the average dimension wm of the first and second side margin portions 114 and 115 in the third direction, or it may mean the average dimension wm of the first and second side margin portions 114 and 115 in the third direction.

[0145] The average dimension wm of the side margins 114 and 115 in the third direction can be measured by scanning the cross-sections of the main body 110 in the first and third directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the dimension in the third direction at five equally spaced points in the first direction in an image scanned from one side margin 114 or 115.

[0146] One embodiment of the present invention describes a structure in which a stacked electronic component 100 has two external electrodes 131 and 132. However, the number and shape of the external electrodes 131 and 132 can be changed depending on the form of the internal electrodes 121 and 122 and other purposes.

[0147] The external electrodes 131 and 132 are positioned on the main body 110 and can be connected to the internal electrodes 121 and 122.

[0148] More specifically, the external electrodes 131 and 132 may include first and second external electrodes 131 and 132 that are arranged on the third and fourth surfaces 3 and 4 of the main body 110, respectively, and connected to first and second internal electrodes 121 and 122, respectively. That is, the first external electrode 131 can be arranged on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 132 can be arranged on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0149] Furthermore, the external electrodes 131 and 132 may extend and be arranged on parts of the first and second surfaces 1 and 2 of the main body 110, or on parts of the fifth and sixth surfaces 5 and 6 of the main body 110. That is, the first external electrode 131 can be arranged on the third surface 3 of the main body 110 and on parts of the first, second, fifth, and sixth surfaces 1, 2, 5, and 6 of the main body 110, and the second external electrode 132 can be arranged on the fourth surface 4 of the main body 110 and on parts of the first, second, fifth, and sixth surfaces 1, 2, 5, and 6 of the main body 110.

[0150] The external electrodes 131 and 132 can be formed using any material that has electrical conductivity, such as metal, and the specific material can be determined by considering electrical properties, structural stability, etc. Furthermore, they can have a multilayer structure.

[0151] For example, the external electrodes 131 and 132 may include first electrode layers 131a and 132a placed on the main body 110, and second electrode layers 131b and 132b placed on the first electrode layers 131a and 132a. Furthermore, they may include third electrode layers 131c and 132c placed on the second electrode layers 131b and 132b.

[0152] Here, it is preferable that the first to third electrode layers are layers that are distinct from each other. However, this is not particularly limited, and they may be divided according to the order of the manufacturing process, and at least some of the first to third electrode layers may not be distinguishable from each other and may be observed as a single layer.

[0153] In this invention, "distinguishing" can mean, but is not limited to, that two layers are distinguished by physical differences, chemical differences, and / or simple optical differences, however, the distinction between layers can be made by the presence or absence of an "interface." An interface can mean a surface in which two layers in contact with each other are distinguishable from one another, for example, a state in which they are distinguishable by differences in components determined by EDS analysis using equipment such as a scanning electron microscope (SEM).

[0154] The first electrode layers 131a, 132a and the second electrode layers 131b, 132b may be formed by transferring a sheet containing a conductive metal onto the main body 110, or by applying a conductive paste for external electrodes containing a conductive metal to the main body 110 and then firing it, or by dipping the main body 110 in a conductive paste for external electrodes containing a conductive metal, but are not particularly limited thereto.

[0155] The first electrode layers 131a and 132a may contain a first conductive metal and glass, and the second electrode layers 131b and 132b may contain a second conductive metal and resin.

[0156] The conductive metal contained in the electrode layers 131a, 132a, 131b, and 132b can be a material with excellent electrical conductivity. For example, the conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but is not particularly limited thereto.

[0157] Here, the conductive metal contained in the first electrode layers 131a and 132a can be referred to as the first conductive metal, and the conductive metal contained in the second electrode layers 131b and 132b can be referred to as the second conductive metal. In this case, the first conductive metal and the second conductive metal can be the same or different from each other, and if multiple conductive metals are included, it is not limited to including conductive metals that are only partially the same.

[0158] The first conductive metal contained in the first electrode layers 131a and 132a can serve to electrically connect with the internal electrodes 121 and 122, and the glass contained in the first electrode layers 131a and 132a can serve to improve the bonding with the main body 110.

[0159] The first conductive metal contained in the first electrode layers 131a and 132a is not particularly limited as long as it is a material that can be electrically connected to the internal electrodes 121 and 122, and may include, for example, at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0160] The second conductive metal contained in the second electrode layers 131b and 132b can serve to electrically connect with the first electrode layers 131a and 132a, and the resin contained in the second electrode layers 131b and 132b can serve to improve warpage strength.

[0161] The second conductive metal contained in the second electrode layers 131b and 132b is not particularly limited as long as it is a material that can be electrically connected to the first electrode layers 131a and 132a, and may include at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0162] The second conductive metal contained in the second electrode layers 131b and 132b may include at least one of spherical particles and flake-shaped particles. That is, the second conductive metal may consist only of flake-shaped particles, only of spherical particles, or in a mixed form of spherical and flake-shaped particles.

[0163] Here, spherical particles may include forms that are not perfectly spherical, for example, forms with a ratio of the length of the major axis to the minor axis (major axis / minor axis) of 1.45 or less. Flake-like particles mean particles having a flat and elongated shape, and are not particularly limited, but for example, the ratio of the length of the major axis to the minor axis (major axis / minor axis) may be 1.95 or more. The lengths of the major axis and minor axis of the above spherical particles and flake-like particles can be measured from images obtained by scanning the cross-sections in the first and second directions, which are cut in the center of the width direction of the stacked electronic component, with a scanning electron microscope (SEM).

[0164] The resin contained in the second electrode layers 131b and 132b is not particularly limited as long as it can perform the role of ensuring bonding and shock absorption and can be mixed with the second conductive metal particles to form a paste, for example, it can include epoxy resins.

[0165] Furthermore, the second electrode layers 131b and 132b may contain an intermetallic compound.

[0166] The inclusion of an intermetallic compound can further improve the electrical connectivity with the first electrode layers 131a and 132a. The intermetallic compound plays a role in improving electrical connectivity by linking multiple second conductive metal particles, and can also play a role in surrounding and connecting multiple second conductive metal particles to one another.

[0167] In this case, the intermetallic compound may include a metal having a melting point lower than the curing temperature of the resin. That is, because the intermetallic compound includes a metal having a melting point lower than the curing temperature of the resin, the metal having a melting point lower than the curing temperature of the resin melts during the drying and curing process, and forms an intermetallic compound with some of the metal particles, surrounding the metal particles. In this case, the intermetallic compound may preferably include a low-melting-point metal of 300°C or less. More specifically, for example, it may include tin (Sn) having a melting point of 213-220°C. During the drying and curing process, the tin (Sn) melts, and the molten tin (Sn) moistens high-melting-point metal particles such as silver (Ag), nickel (Ni), or copper (Cu) by capillary action, reacting with some of the silver (Ag), nickel (Ni), or copper (Cu) metal particles to form intermetallic compounds such as Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn. Silver (Ag), nickel (Ni), or copper (Cu) that are not involved in the reaction may remain in the form of metal particles.

[0168] Therefore, the multiple second conductive metal particles may include at least one of silver (Ag), nickel (Ni), and copper (Cu), and the intermetallic compound may include one or more of Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn.

[0169] The third electrode layers 131c and 132c can play a role in improving mounting characteristics, and the third electrode layers 131c and 132c may be plated layers formed on the second electrode layers 131b and 132b by a plating method, but are not particularly limited thereto.

[0170] The types of the third electrode layers 131c and 132c are not particularly limited and may include, for example, at least one of nickel (Ni), tin (Sn), silver (Ag), palladium (Pd), and alloys thereof.

[0171] The third electrode layers 131c and 132c may be a single layer or multiple layers.

[0172] More specifically, for example, the third electrode layer may be a nickel (Ni) electrode layer or a tin (Sn) electrode layer, and may be a configuration in which a nickel (Ni) electrode layer and a tin (Sn) electrode layer are sequentially formed on the second electrode layers 131b, 132b, or a configuration in which a tin (Sn) electrode layer, a nickel (Ni) electrode layer, and a tin (Sn) electrode layer are sequentially formed. Furthermore, the third electrode layers 131c, 132c may include multiple nickel (Ni) electrode layers and / or multiple tin (Sn) electrode layers.

[0173] There is no particular limit to the size of the stacked electronic component 100.

[0174] However, in order to minimize the heat generated in a high-voltage environment, the thickness of the dielectric layer and internal electrodes must be increased. Therefore, the effects of the present invention may become more pronounced in stacked electronic components 100 of size 2012 (length × width: 2.0 mm × 1.2 mm, length and width satisfying an error of ±10%) or 5750 (length × width: 5.7 mm × 5.0 mm, length and width satisfying an error of ±10%).

[0175] The present invention will be described in more detail below through test examples, but these are intended to aid in a concrete understanding of the invention and do not limit the scope of the present invention.

[0176] (Example test) Table 1 below shows the heat generation evaluation (aging rate), high-temperature lifetime reliability, and insulation resistance (IR) values ​​evaluated based on the area percentage of the primary secondary phase contained in the dielectric layer and the area percentage of the secondary phase contained in the internal electrodes.

[0177] In Test Example 1, a sample chip was fabricated such that the area percentage of the primary secondary phase containing yttrium (Y), zirconium (Zr), and oxygen (O) relative to the cross-sectional area of ​​the dielectric layer was 0.1% to 10%, the area percentage of the secondary phase containing nickel (Ni) and oxygen (O) relative to the cross-sectional area of ​​the internal electrode was 0.5% to 10%, and the area percentage of the tertiary phase containing manganese (Mn), iron (Fe), nickel (Ni), zinc (Zn), and silicon (Si) relative to the cross-sectional area of ​​the dielectric layer was 0.1% to 5%. Figure 7 shows a scanning electron microscope (SEM) observation of the cross-section of the capacitance formation area in Test Example 1.

[0178] In Test Example 2, a sample chip was fabricated such that the area percentage of the primary secondary phase containing yttrium (Y), zirconium (Zr), and oxygen (O) relative to the cross-sectional area of ​​the dielectric layer was 0.1% to 5%, the area percentage of the secondary phase containing nickel (Ni) and oxygen (O) relative to the cross-sectional area of ​​the internal electrode was 0.1% to 5%, and the area percentage of the tertiary phase containing manganese (Mn), iron (Fe), nickel (Ni), zinc (Zn), and silicon (Si) relative to the cross-sectional area of ​​the dielectric layer was 0.1% to 5%.

[0179] In Test Example 3, a sample chip was fabricated such that the area percentage of the primary secondary phase containing yttrium (Y), zirconium (Zr), and oxygen (O) relative to the cross-sectional area of ​​the dielectric layer was between 0.1% and 5%, the area percentage of the secondary phase containing nickel (Ni) and oxygen (O) relative to the cross-sectional area of ​​the internal electrode was greater than 10%, and the area percentage of the tertiary phase containing manganese (Mn), iron (Fe), nickel (Ni), zinc (Zn), and silicon (Si) relative to the cross-sectional area of ​​the dielectric layer was between 0.1% and 5%.

[0180] Test Example 4 is a sample chip fabricated such that the area percentage of the first secondary phase containing yttrium (Y), zirconium (Zr), and oxygen (O) is 0.1% or more and 5% or less with respect to the cross-sectional area of the dielectric layer, the area percentage of the second secondary phase containing nickel (Ni) and oxygen (O) exceeds 10% with respect to the cross-sectional area of the internal electrode, and the area percentage of the third secondary phase containing manganese (Mn), iron (Fe), nickel (Ni), zinc (Zn), and silicon (Si) is 0.1% or more and 5% or less with respect to the cross-sectional area of the dielectric layer.

[0181] The heat generation evaluation (Aging rate, °C / hr) was described by measuring the temperature change per hour (°C / hr) using a thermal imaging camera (Flir A400SC) while applying a frequency of 100 kHz, a temperature of 105 °C, and a voltage of 1 kV to five sample chips mounted on a PCB substrate using a power supply (Keysight E36234A), an oscilloscope (Keysight DSOX1204A), and a source meter (Keysight 34972A).

[0182] The high-temperature life reliability was described by converting the number of sample chips determined to be defective as a percentage of the total number of sample chips when, when applying 1.2 kV for 72 hours at a temperature of 170 °C to five sample chips mounted on a PCB substrate, it was determined to be defective when the initial insulation resistance (IR) value decreased by 10% or less.

[0183] The insulation resistance (IR, Ω) was described by measuring the insulation resistance (IR) value when applying a voltage of 500 V for 60 seconds to one sample chip using an insulation resistance (IR) measuring instrument (VITREK QTPro II-950).

[0184] The COG characteristics were evaluated as ○ and described when, when measuring the capacitance change value according to temperature for one sample chip, ΔC / C at25℃ =(0 ± 30 ppm) / °C was satisfied within the temperature range of -55 °C to 125 °C, and for one sample chip, ΔC / C at25℃If the value of (0±30ppm) / ℃ was not met, it was evaluated and noted as ×.

[0185] The Q (Quality Factor) value is the Q value measured when 100 kHz is applied via an LCR meter measuring device.

[0186] [Table 1]

[0187] Referring to Figure 8, which shows the heat generation evaluation results in a graph, it can be seen that, except for the initial stage where the rate of heat generation increases rapidly, in Test Example 1, the aging rate was 0.9°C / hr and heat generation was relatively suppressed, while in Test Example 2, the aging rate was 2.4°C / hr and heat generation was relatively observed. This is judged to be because the heat generation characteristics improved as the area percentage of the second secondary phase relative to the cross-sectional area of ​​the internal electrode reached 0.5-10%. Aging rate evaluation was not performed for Test Examples 3 and 4.

[0188] Furthermore, in all of Test Examples 1 to 4, no sample chips showed any defects in the evaluation of high-temperature lifetime reliability, and all insulation resistance (IR) values ​​were 10. 9 When the resistance exceeds Ω and the area percentage of the primary secondary phase relative to the cross-sectional area of ​​the dielectric layer is between 0.1% and 10%, or exceeds 10%, it is determined that the high-temperature lifetime reliability and insulation resistance characteristics are improved. This is because the inclusion of the primary secondary phase improves the high-temperature lifetime reliability and insulation resistance characteristics.

[0189] On the other hand, while Test Examples 1 to 3 satisfied the COG characteristics, Test Example 4 did not. In Test Example 4, it was determined that the temperature characteristics became unstable because the area percentage of the primary secondary phase relative to the cross-sectional area of ​​the dielectric layer exceeded 10%. This indicates that it is easy to control the COG characteristics when the area percentage of the primary secondary phase relative to the cross-sectional area of ​​the dielectric layer is between 0.1% and 10%.

[0190] In Test Examples 1, 2, and 4, the Q value was measured to be 5000 or higher, whereas in Test Example 3, the Q value was measured to be less than 5000. In Test Example 3, it was determined that the Q value decreased because the electrical characteristics deteriorated due to the area percentage of the secondary phase relative to the cross-sectional area of ​​the internal electrode exceeding 10%. This indicates that the Q value is superior when the area percentage of the secondary phase relative to the cross-sectional area of ​​the internal electrode is between 0.5% and 10%.

[0191] Although embodiments and test examples of the present invention have been described in detail above, the present invention is not limited by the embodiments and accompanying drawings described above, but is limited by the claims provided. Therefore, within the scope of the technical idea of ​​the present invention as described in the claims, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, and these also fall within the scope of the present invention.

[0192] Furthermore, the term "embodiment" as used in this invention does not mean that each embodiment is identical to the others, but rather is provided to emphasize and describe the unique and distinct characteristics of each embodiment. However, the embodiments presented above do not preclude their implementation in combination with the features of other embodiments. For example, even if a matter described in one particular embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment, as long as there is no description in the other embodiment that contradicts or is contrary to that matter.

[0193] The terms used in this invention are used merely to describe one embodiment and are not intended to limit the invention. In this context, singular expressions may include plural expressions unless they clearly mean something different in context. [Explanation of symbols]

[0194] 100 Stacked Electronic Components 110 Main Unit 111 Dielectric layer 112, 113 Cover section 114', 115' Side margin area 114, 115 Side margin section 121, 122 Internal electrode 131, 132 External electrode

Claims

1. (Ca, Sr) (Zr, Ti) O ３ A body comprising a dielectric layer mainly composed of and internal electrodes arranged alternately with the dielectric layer, The body includes an external electrode disposed on the main body, The dielectric layer contains a first secondary phase comprising rare earth elements (RE), zirconium (Zr), and oxygen (O) in an area percentage of 0.1% to 10% of the cross-sectional area of ​​the dielectric layer. A multilayer electronic component wherein the internal electrode contains a second secondary phase comprising nickel (Ni) and oxygen (O) at an area percentage of 0.5% to 10% of the cross-sectional area of ​​the internal electrode.

2. The main component of the dielectric layer is (Ca, Sr)(Zr, Ti)O ３ is the chemical formula (Ca １－ｘ , Sr ｘ ) (Zr １－ｙ Ti ｙ ) O ３ A stacked electronic component according to claim 1, satisfying (0 < x ≤ 0.5, 0 < y ≤ 0.5).

3. The stacked electronic component according to claim 1, wherein the rare earth element (RE) comprises at least one of yttrium (Y), cerium (Ce), lanthanum (La), praseodymium (Pr), and neodymium (Nd).

4. The laminated electronic component according to claim 1, wherein the dielectric layer contains a third secondary phase comprising a transition metal and silicon (Si) in an area percentage of 0.1% to 5% of the cross-sectional area of ​​the dielectric layer.

5. The multilayer electronic component according to claim 4, wherein the transition metal comprises at least one of manganese (Mn), iron (Fe), nickel (Ni), and zinc (Zn).

6. The first secondary phase is RE ２ Zr ２ O ７ , REZrO ３ , RE ２ ZrO ５ and at least one of RE-doped ZrO ２ The multilayer electronic component according to claim 1, comprising at least one of them.

7. The second secondary phase is NiO, Ni ２ O ３ and Ni ３ O ４ A stacked electronic component according to claim 1, comprising at least one of the following.

8. The stacked electronic component according to claim 1, wherein the average length of the stacked electronic component is 2.0 mm or more, and the average width is 1.2 mm or more.

9. The stacked electronic component according to claim 1, wherein the average thickness td of the dielectric layer satisfies td ≤ 10 μm.

10. The stacked electronic component according to claim 1, wherein the average thickness te of the internal electrodes satisfies te ≤ 3 μm.

11. The stacked electronic component according to claim 1, wherein the average thickness td of the dielectric layer and the average thickness te of the internal electrode satisfy 2 × te < td.

12. Perovskite structure (ABO ３ A body comprising a dielectric layer mainly composed of a dielectric material, and internal electrodes arranged alternately with the dielectric layer, The body includes an external electrode disposed on the main body, The dielectric layer contains a first secondary phase comprising rare earth elements (RE) and the B-site element in an area percentage of 0.1% to 10% of the cross-sectional area of ​​the dielectric layer. A stacked electronic component wherein the internal electrode contains a second secondary phase, which includes the main component metal of the internal electrode, at an area percentage of 0.5% to 10% of the cross-sectional area of ​​the internal electrode.

13. The multilayer electronic component according to claim 12, wherein the A-site element comprises calcium (Ca) and strontium (Sr), and the B-site element comprises zirconium (Zr) and titanium (Ti).

14. The stacked electronic component according to claim 12, wherein the rare earth element (RE) comprises at least one of yttrium (Y), cerium (Ce), lanthanum (La), praseodymium (Pr), and neodymium (Nd).

15. The stacked electronic component according to claim 12, wherein the main component metal of the internal electrode includes at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), and titanium (Ti).

16. The laminated electronic component according to claim 12, wherein the dielectric layer contains a third secondary phase comprising a transition metal including at least one of manganese (Mn), iron (Fe), nickel (Ni), and zinc (Zn), and silicon (Si), in an area percentage of 0.1% to 5% of the cross-sectional area of ​​the dielectric layer.

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