Variable gain amplifier and transmitting device

Abstract

This disclosure provides a variable gain amplifier, comprising: a voltage signal input terminal; a high-level generation module, the high-level generation module including a first high-level signal output terminal and a second high-level signal output terminal, the high-level generation module being used to convert a voltage signal input through the voltage signal input terminal into a first high-level signal and a second high-level signal; a switch signal conversion module, the switch signal conversion module including a high-level signal input terminal, N digital signal input terminals, and N switch signal output terminals, the switch signal conversion module being used to output a gain control signal associated with the signal output from the high-level signal input terminal through a corresponding switch signal output terminal under the control of the signal input at the digital signal input terminal; and an amplification module, the amplification module including an amplification unit and N-stage gain control units, wherein N is a positive integer not less than 1. This disclosure also provides a transmitting device.

Description

Technical Field

[0001] This disclosure relates to the field of communication equipment, and more specifically, to a variable gain amplifier and a transmitting device including the variable gain amplifier. Background Technology

[0002] Variable gain amplifiers are an important component of transceiver systems. Common types of variable gain amplifiers include those with digital current rudders, those with analog current rudders, and those with digital step attenuators.

[0003] Among them, variable gain amplifiers with digital current rudder structure are the most widely used. However, the gain step and maximum gain of variable gain amplifiers with digital current rudder structure are greatly affected by temperature and process angle, which leads to the error of variable gain amplifiers with digital current rudder structure also varying with temperature and process angle. Summary of the Invention

[0004] This disclosure provides a variable gain amplifier and a transmitting device including the variable gain amplifier.

[0005] As a first aspect of this disclosure, a variable gain amplifier is provided, comprising:

[0006] Voltage signal input terminal;

[0007] A high-level generation module includes a first high-level signal output terminal and a second high-level signal output terminal. The high-level generation module is used to convert a voltage signal input through the voltage signal input terminal into a first high-level signal and a second high-level signal. Both the first high-level signal and the second high-level signal are positively correlated with the temperature of the variable gain amplifier, and the potential of the first high-level signal is higher than that of the second high-level signal.

[0008] A switch signal conversion module includes a high-level signal input terminal, N digital signal input terminals, and N switch signal output terminals. The high-level signal input terminal is electrically connected to the first high-level signal output terminal, and the N switch signal output terminals correspond one-to-one with the N signal input terminals. The switch signal conversion module is used to output a gain control signal associated with the signal output from the high-level signal input terminal through the corresponding switch signal output terminals under the control of the signal input at the digital signal input terminal.

[0009] An amplification module includes an amplification unit and an N-stage gain control unit. Each of the N gain control units corresponds one-to-one with one of the N switch signal output terminals of the switch signal conversion module. The control terminal of each gain control unit is electrically connected to its corresponding switch signal output terminal. The input terminal of each gain control unit is electrically connected to the voltage signal input terminal. The output terminal of each gain control unit is electrically connected to the intermediate node of the amplification unit. Under the control of the signal received at its control terminal, the gain control unit can provide a temperature-positive voltage signal to the intermediate node. The input terminal of each amplification unit is electrically connected to the second high-level signal output terminal, and the control terminal of each amplification unit is electrically connected to the first high-level signal output terminal. Here, N is a positive integer not less than 1.

[0010] Optionally, the switch signal conversion module includes N switch signal conversion units, each corresponding to one of the N digital signal input terminals, and each corresponding to one of the N switch signal output terminals.

[0011] The control terminal of the switch signal conversion unit is electrically connected to the corresponding digital signal input terminal, the input terminal of the switch signal conversion unit is electrically connected to the first high-level signal terminal, and the output terminal of the switch signal conversion unit is electrically connected to the corresponding switch signal output terminal.

[0012] When the control terminal of the switch signal conversion unit receives a valid digital signal for the switch signal conversion unit, the input terminal of the switch signal conversion unit is connected to the output terminal of the switch signal conversion unit.

[0013] Optionally, the switching signal conversion unit includes a first switching signal conversion transistor and a second switching signal conversion transistor. The gate of the first switching signal conversion transistor is electrically connected to the gate of the second switching signal conversion transistor, and both are electrically connected to their respective digital signal input terminals. The first terminal of the first switching signal conversion transistor is electrically connected to the first high-level signal input terminal, the second terminal of the first switching signal conversion transistor is electrically connected to the first terminal of the second switching signal conversion transistor, and the second terminal of the second switching signal conversion transistor is electrically connected to a low-level signal reference terminal. One of the first and second switching signal conversion transistors is a P-type transistor, and the other of the first and second switching signal conversion transistors is an N-type transistor.

[0014] Optionally, the first switching signal conversion transistor is a P-type transistor, and the second switching signal conversion transistor is an N-type transistor.

[0015] Optionally, the high-level generation module includes:

[0016] A current source, the input terminal of which is formed as the voltage input terminal, the current source being able to convert the voltage signal input to the voltage input terminal into current, and the current being positively correlated with the temperature of the variable gain amplifier;

[0017] A current conversion unit is provided, wherein the input terminal of the current conversion unit is electrically connected to the output terminal of the current source, the first output terminal of the current conversion unit is configured as the first high-level signal output terminal, and the second output terminal of the current conversion unit is configured as the second high-level signal output terminal. The current conversion unit is used to convert the current into the first high-level signal and the second high-level signal respectively, and outputs the first high-level signal through the first output terminal and the second high-level signal through the second output terminal.

[0018] Optionally, the high-level generation module includes a first current conversion transistor and a second current conversion transistor;

[0019] The gate of the first current conversion transistor is electrically connected to the first electrode of the first current conversion transistor and forms the input terminal of the high-level generation module; the first output terminal is electrically connected to the first electrode of the first current conversion transistor.

[0020] The gate of the second current conversion transistor is electrically connected to the first terminal of the second current conversion transistor, and both are electrically connected to the second terminal of the first current conversion transistor. The second output terminal is electrically connected to the first terminal of the second current conversion transistor, and the second terminal of the second current conversion transistor is electrically connected to the low-level signal reference terminal.

[0021] Optionally, the gain control unit includes a gain transistor, the gate of which is formed as the control terminal of the gain control unit, the first terminal of which is electrically connected to the voltage signal input terminal, and the second terminal of which is formed as the output terminal of the gain control unit.

[0022] Optionally, the amplification unit includes a first amplification transistor and a second amplification transistor, the gate of the first amplification transistor is formed as the control terminal of the amplification unit, the first terminal of the first amplification transistor is electrically connected to the output terminal of the amplification unit, and the second terminal of the first amplification transistor is electrically connected to the intermediate node.

[0023] The gate of the second amplifying transistor is formed as the input terminal of the amplifying unit, the first terminal of the second amplifying transistor is electrically connected to the second terminal of the amplifying transistor, and the second terminal of the second amplifying transistor is electrically connected to the low-level signal reference terminal.

[0024] Optionally, the amplification unit further includes a resistor element, one end of which is electrically connected to the voltage signal input terminal, and the other end of which is electrically connected to the first electrode of the first amplifying transistor.

[0025] As a second aspect of this disclosure, a transmitting apparatus is provided, the transmitting apparatus comprising an intermediate frequency variable gain amplifier, a mixer, an radio frequency variable gain amplifier and a power amplifier connected in sequence, wherein at least one of the intermediate frequency variable gain amplifier and the radio frequency variable gain amplifier is the aforementioned variable gain amplifier provided in this disclosure.

[0026] When the variable gain amplifier is used to amplify the input signal, while receiving the input signal through the input terminal of the amplification unit, it is necessary to provide power supply voltage to the high-level generation module and the gain control unit through the voltage signal input terminal.

[0027] As the usage time increases, the variable gain amplifier will heat up and its temperature will rise. The first high-level signal output by the high-level generation module is positively correlated with the temperature of the variable gain amplifier, and the signal received by the control terminal of the amplification unit of the amplification module is also positively correlated with the temperature.

[0028] The first high-level signal output by the high-level generation module has two functions: the first function is to enable the switching signal conversion module to output a control signal associated with the first high-level signal (i.e., to enable the control signal of the gain control unit to be associated with temperature); the second function is to enable the control terminal of the amplification unit to receive the control signal associated with the first high-level signal (i.e., to enable the control signal of the amplification unit to be associated with temperature).

[0029] The control signals of the gain control unit and the amplification unit are both temperature-dependent. This makes the output of the gain control unit change with temperature and the output of the amplification unit change with temperature and process angle, thereby enabling the gain step of the variable gain amplifier provided in this disclosure to remain consistent under different temperature conditions and different process angle conditions. Attached Figure Description

[0030] Figure 1 A schematic diagram illustrating one embodiment of the variable gain amplifier provided in this disclosure;

[0031] Figure 2 A schematic diagram of another embodiment of the variable gain amplifier provided in this disclosure;

[0032] Figure 3 The figure shows the gain curves of the variable gain amplifier at -25℃, 25℃, and 125℃ when N is 4.

[0033] Figure 4 The figure shows the gain curves of the variable gain amplifier at process corners TT, FF, and SS when N is 4.

[0034] Figure 5 This is a schematic diagram of one embodiment of the launching device provided in this disclosure. Detailed Implementation

[0035] To enable those skilled in the art to better understand the technical solutions of this disclosure, the variable gain amplifier and transmitting device provided in this disclosure will be described in detail below with reference to the accompanying drawings.

[0036] Exemplary embodiments will be described more fully below with reference to the accompanying drawings; however, these exemplary embodiments may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will enable those skilled in the art to fully understand the scope of this disclosure.

[0037] Where there is no conflict, the various embodiments of this disclosure and the features thereof in the embodiments may be combined with each other.

[0038] As used herein, the term “and / or” includes any and all combinations of one or more related enumerated entries.

[0039] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. As used herein, the singular forms “a” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It will also be understood that when the terms “comprising” and / or “made of” are used in this specification, the presence of the stated feature, integral, step, operation, element, and / or component is specified, but the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof is not excluded.

[0040] Unless otherwise specified, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art. It will also be understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and this disclosure, and will not be interpreted as having an idealized or overly formal meaning, unless expressly so defined herein.

[0041] As a first aspect of this disclosure, a variable gain amplifier is provided, such as Figure 1 As shown, the variable gain amplifier includes a voltage signal input terminal ELVDD, a high-level generation module 110, a switch signal conversion module 120, and an amplification module 130.

[0042] The high-level generation module 110 includes a first high-level signal output terminal and a second high-level signal output terminal. The high-level generation module 110 is used to convert the voltage signal input through the voltage signal input terminal ELVDD into a first high-level signal VGH1 and a second high-level signal VGH2. Both the first high-level signal and the second high-level signal are positively correlated with the temperature of the variable gain amplifier, and the potential of the first high-level signal is higher than the potential of the second high-level signal.

[0043] The switch signal conversion module 120 includes a high-level signal input terminal, N digital signal input terminals (D1 to DN respectively), and N switch signal output terminals. The high-level signal input terminal is electrically connected to the first high-level signal output terminal. The N switch signal output terminals correspond one-to-one with the N signal input terminals. The switch signal conversion module is used to output gain control signals associated with the signals output from the high-level signal input terminals through the corresponding switch signal output terminals under the control of the signals input at the digital signal input terminals. In this disclosure, N is a positive integer not less than 1.

[0044] The amplification module 130 includes an amplification unit 131 and N-stage gain control units (gain units 1321 to 132N, respectively). The N-stage gain control units correspond one-to-one with the N switch signal output terminals of the switch signal conversion module. The control terminal of the gain control unit is electrically connected to the corresponding switch signal output terminal. The input terminal of the gain control unit is electrically connected to the voltage signal input terminal. The output terminal of the gain control unit is electrically connected to the intermediate node of the amplification unit. Under the control of the signal received at the control terminal of the gain control unit, the gain control unit can provide a temperature-positive voltage signal to the intermediate node. The input terminal of the amplification unit is electrically connected to the second high-level signal output terminal, and the control terminal of the amplification unit is electrically connected to the first high-level signal output terminal.

[0045] When the variable gain amplifier is used to amplify the input signal, while receiving the input signal RFI through the input terminal of the amplification unit 131, it is necessary to provide power supply voltage to the high-level generation module and the gain control unit through the voltage signal input terminal.

[0046] As the usage time increases, the variable gain amplifier will heat up and its temperature will rise. The first high-level signal output by the high-level generation module 110 is positively correlated with the temperature of the variable gain amplifier. The signal received by the control terminal of the amplification unit 131 of the amplification module 130 is also positively correlated with the temperature.

[0047] The first high-level signal output by the high-level generation module 110 has two functions: the first function is to enable the switching signal conversion module to output a control signal associated with the first high-level signal (i.e., to enable the control signal of the gain control unit to be associated with temperature); the second function is to enable the control terminal of the amplification unit to receive the control signal associated with the first high-level signal (i.e., to enable the control signal of the amplification unit to be associated with temperature).

[0048] The control signals of the gain control unit 132 and the amplification unit 131 are both temperature-dependent. This makes the output of the gain control unit 132 change with temperature and the output of the amplification unit 131 change with temperature and process angle, thereby enabling the gain step of the variable gain amplifier provided in this disclosure to remain consistent under different temperature conditions and different process angle conditions.

[0049] In this disclosure, the specific structure of the switch signal conversion module 120 is not specifically limited, as long as it can convert the first high-level signal into a control signal of the gain control unit under the control of the digital signal.

[0050] As an optional implementation, the switch signal conversion module 120 includes N switch signal conversion units (e.g., switch signal conversion unit 121 to switch signal conversion unit 12N), each of which corresponds to one of the N digital signal input terminals and each of the N switch signal conversion units corresponds to one of the N switch signal output terminals.

[0051] The control terminal of the switching signal conversion unit is electrically connected to the corresponding digital signal input terminal (in... Figure 2 In the specific embodiment shown, the digital signal input terminal D1 is electrically connected to the control terminal of the switch signal conversion unit 121, the digital signal input terminal DN is electrically connected to the control terminal of the switch signal conversion unit 12N, the input terminal of the switch signal conversion unit is electrically connected to the first high-level signal terminal, and the output terminal of the switch signal conversion unit is electrically connected to the corresponding switch signal output terminal.

[0052] When the control terminal of the switching signal conversion unit receives a valid digital signal for the switching signal conversion unit, it connects the input terminal and the output terminal of the switching signal conversion unit. When the input and output terminals of the switching signal conversion unit are connected, a first high-level signal can be output to the control terminal of the corresponding gain control unit.

[0053] It should be noted that the digital signal can be either 0 or 1. The digital signal valid for the switching signal conversion unit can be either 0 or 1, which is determined by the specific structure of the switching signal conversion unit.

[0054] exist Figure 2 In the embodiment shown, the switching signal conversion unit includes a first switching signal conversion transistor and a second switching signal conversion transistor. The gate of the first switching signal conversion transistor is electrically connected to the gate of the second switching signal conversion transistor, and both are electrically connected to their respective digital signal input terminals. The first terminal (source) of the first switching signal conversion transistor is electrically connected to the first high-level signal input terminal, the second terminal (drain) of the first switching signal conversion transistor is electrically connected to the first terminal (drain) of the second switching signal conversion transistor, and the second terminal (source) of the second switching signal conversion transistor is electrically connected to the low-level signal reference terminal. One of the first and second switching signal conversion transistors is a P-type transistor, and the other of the first and second switching signal conversion transistors is an N-type transistor.

[0055] Specifically, when the first switch signal conversion transistor is a P-type transistor and the second switch signal conversion transistor is an N-type transistor, the effective digital signal for the switch signal conversion unit is 0. When the first switch signal conversion transistor is an N-type transistor and the second switch signal conversion transistor is a P-type transistor, the effective digital signal for the switch signal conversion unit is 1.

[0056] exist Figure 2 In the specific embodiment shown, the first switching signal conversion transistor is a P-type transistor, and the second switching signal conversion transistor is an N-type transistor.

[0057] The switching signal conversion unit 121 includes a first switching transistor T11 and a second switching transistor T12, and the switching signal conversion unit 12N includes a first switching transistor TN1 and a second switching transistor TN2.

[0058] like Figure 2 As shown, the first terminal of the first switching transistor T11 is electrically connected to the first high-level signal output terminal, and the first terminal of the first switching transistor TN1 is also electrically connected to the first high-level signal output terminal. The second terminal of the second switching transistor T21 is electrically connected to the low-level signal reference terminal, and the second terminal of the second switching transistor TN2 is also electrically connected to the low-level signal reference terminal.

[0059] When the control terminal of the switching signal conversion unit 121 receives the digital signal 0, the first pole (source) and the second pole (drain) of the first switching transistor T11 are turned on, and the first pole and the second pole of the second switching transistor T12 are turned off, so that the signal of the first high-level signal terminal can be output to the control terminal of the gain control unit corresponding to the switching signal 121.

[0060] When the control terminal of the switching signal conversion unit 12N receives the digital signal 0, the first and second terminals of the first switching transistor TN1 are turned on, and the first and second terminals of the second switching transistor TN2 are turned off, so that the signal of the first high-level signal terminal can be output to the control terminal of the gain control unit corresponding to the switching signal 12N.

[0061] Through various switching signal conversion units, the digital signals used to control the gain control unit can be converted into temperature-related control signals.

[0062] In this disclosure, the specific structure of the high-level generation module 110 is not specifically limited, as long as it can generate a first high-level signal and a second high-level signal that are positively correlated with temperature. Figure 2 In the embodiment shown, the high-level generation module includes a current source 111 and a current conversion unit 112.

[0063] The input terminal of the current source 111 is formed as the voltage input terminal. The current source 111 can convert the voltage signal input to the voltage input terminal into a current Iptat, and the current is positively correlated with the temperature of the variable gain amplifier.

[0064] The input terminal of the current conversion unit 112 is electrically connected to the output terminal of the current source 111. The first output terminal of the current conversion unit 112 is formed as the first high-level signal output terminal, and the second output terminal of the current conversion unit 112 is formed as the second high-level signal output terminal. The current conversion unit is used to convert the current into the first high-level signal and the second high-level signal respectively, and output the first high-level signal through the first output terminal and output the second high-level signal through the second output terminal.

[0065] In this disclosure, no special limitation is made on the specific structure of the current conversion unit 112. For example, the current conversion unit 112 includes a first current conversion transistor T1 and a second current conversion transistor T2.

[0066] Specifically, such as Figure 2 As shown, the gate of the first current conversion transistor T1 is electrically connected to its first terminal, forming the input terminal of the current conversion unit 112. The first output terminal is electrically connected to the first terminal of the first current conversion transistor T1. The gate of the second current conversion transistor T2 is electrically connected to its first terminal, and both are electrically connected to the second terminal of the first current conversion transistor T1. The second output terminal is electrically connected to the first terminal of the second current conversion transistor T2, and the second terminal of the second current conversion transistor T2 is electrically connected to the low-level signal reference terminal.

[0067] When a voltage signal is input to the voltage input terminal, the current source 111 converts the voltage signal into a first high-level signal and inputs it to the first terminal and gate of the first current conversion transistor T1. The gate of the first current conversion transistor T1 receives the first high-level signal, causing the first and second terminals of the first current conversion transistor T1 to conduct. Then, the second terminal of the first current conversion transistor T1 converts the signal to another high-level signal, which is received by the gate of the second current conversion transistor T2, causing the first and second terminals of the second current conversion transistor T1 to conduct. Due to the voltage divider effect of the first and second current conversion transistors T1 and T2, the voltage at the node between the second terminal of the first current conversion transistor T1 and the first terminal of the second current conversion transistor T2 (i.e., the second output terminal) is a second high-level signal, the potential of which is lower than the potential of the first high-level signal.

[0068] The second high-level signal is provided to the input terminal of the amplifier unit 131, so that the input signal of the amplifier unit 131 is also related to the temperature of the variable gain amplifier.

[0069] In this disclosure, both the first current conversion transistor T1 and the second current conversion transistor T2 are N-type transistors.

[0070] In this disclosure, the specific structure of the gain control unit is not specifically limited. In this disclosure, the main function of the gain control unit is to introduce an external power supply voltage to the intermediate node of the amplification unit 131 under the control of a control signal. As an optional embodiment, the gain control unit may include a gain transistor, the gate of which is formed as the control terminal of the gain control unit, the first electrode (six-stage) of the gain transistor is electrically connected to the voltage signal input terminal ELVDD, and the second electrode (source) of the gain transistor is formed as the output terminal of the gain control unit.

[0071] Since the gate voltage of the gain transistor is temperature-dependent, the voltage of the second electrode (in this invention, the second electrode is the source electrode) of the gain transistor is also temperature-dependent, which causes the transconductance of the gain transistor to change with temperature.

[0072] In amplifier unit 131, the input signals are the input voltage RFI and a temperature-dependent second high-level signal. Therefore, the input voltage of amplifier unit 131 is temperature-dependent, and the voltage of the intermediate nodes of amplifier unit 131 is also temperature-dependent. As mentioned above, the signal received by the control terminal of amplifier unit 131 is the first high-level signal. Since the signals at each node of amplifier unit 131 are temperature-dependent, the gain step of amplifier unit 131 can remain consistent under different temperature and process angle conditions.

[0073] exist Figure 2In the specific embodiment shown, the gain control unit 1321 includes a gain transistor T1321, and the gain crystal unit 132N includes a gain transistor T132N.

[0074] exist Figure 2 In the alternative embodiment shown, the gain transistor is an N-type transistor.

[0075] In this disclosure, the specific structure of the amplification unit 131 is not specifically limited. Optionally, the amplification unit 131 includes a first amplification transistor T3 and a second amplification transistor T4. The gate of the first amplification transistor T3 is formed as the control terminal of the amplification unit 131. The first terminal of the first amplification transistor T3 is electrically connected to the output terminal of the amplification unit 131, and the second terminal of the first amplification transistor T3 is electrically connected to the intermediate node.

[0076] The gate of the second amplifying transistor T4 is formed as the input terminal of the amplifying unit 131. The first terminal (drain) of the second amplifying transistor T4 is electrically connected to the second terminal of the amplifying transistor T4, and the second terminal (source) of the second amplifying transistor T4 is electrically connected to the low-level signal reference terminal.

[0077] When the gate of the second amplifying transistor T4 receives the input signal RFI and the second high-level signal, it operates in the amplification region and outputs a signal to the intermediate node. The gate voltage of the first amplifying transistor T3 is the first high-level signal, and the source voltage of the first amplifying transistor T3 includes the superposition of the signals output by the gain control units at each stage and the signal output by the first terminal of the second amplifying transistor T3. Therefore, the second amplifying transistor T4 can output the amplified signal.

[0078] exist Figure 2 In the embodiment shown, both the first amplifying transistor T3 and the second amplifying transistor are N-type transistors.

[0079] In this disclosure, the amplification unit 131 needs to receive a voltage signal from an external power supply input. Optionally, the first terminal of the first amplification transistor T3 can be directly electrically connected to the voltage signal input terminal. Figure 2 In the embodiment shown, the amplification unit 131 further includes a resistor element R, one end of which is electrically connected to the voltage signal input terminal, and the other end of which is electrically connected to the first electrode of the first amplification transistor T3.

[0080] The following is combined Figure 2 The specific structure and operating principle of one embodiment of the variable gain amplifier provided in this disclosure will be explained and described. In this embodiment, the low-level signal reference terminal is the ground terminal GND.

[0081] exist Figure 2In the illustrated embodiment, the high-level generation module 110 includes a current source 111 and a current conversion unit 112. The current conversion unit 112 includes a first current conversion transistor T1 and a second current conversion transistor T2, both of which are N-type transistors. The gate of the first current conversion transistor T1 is electrically connected to its first terminal, and its second terminal is electrically connected to the first terminal of the second current conversion transistor T2. The second terminal of the second current conversion transistor T2 is electrically connected to the ground terminal GND.

[0082] The switch signal conversion unit 120 includes N switch signal conversion units, and in Figure 2 The diagram illustrates a switch signal conversion unit 121 and a switch signal conversion unit 12N. Switch signal conversion unit 121 includes a first switch transistor T11 and a second switch transistor T12, while switch signal conversion unit 12N includes a first switch transistor TN1 and a second switch transistor TN2. The first terminal of the first switch transistor T11 is electrically connected to a first high-level signal output terminal, and the first terminal of the first switch transistor TN1 is also electrically connected to the first high-level signal output terminal. The second terminal of the second switch transistor T11 is electrically connected to a low-level signal reference terminal, and the second terminal of the second switch transistor TN2 is also electrically connected to the low-level signal reference terminal.

[0083] When the control terminal of the switching signal conversion unit 121 receives the digital signal 0, the first and second terminals of the first switching transistor T11 are turned on, and the first and second terminals of the second switching transistor T12 are turned off, so that the signal of the first high-level signal terminal can be output to the control terminal of the gain control unit (1321) corresponding to the switching signal 121.

[0084] When the control terminal of the switching signal conversion unit 12N receives the digital signal 0, the first and second terminals of the first switching transistor TN1 are turned on, and the first and second terminals of the second switching transistor TN2 are turned off, so that the signal of the first high-level signal terminal can be output to the control terminal of the gain control unit (132N) corresponding to the switching signal 12N.

[0085] exist Figure 2 In the illustrated embodiment, the gain control unit 1321 includes a gain transistor T1321, and the gain transistor unit 132N includes a gain transistor T132N. The gate of the gain transistor T1321 is electrically connected to the second terminal of the first switching transistor T11, and the gate of the gain transistor T132N is electrically connected to the second terminal of the first switching transistor TN1.

[0086] The amplification unit 131 includes a first amplification transistor T3 and a second amplification transistor T4. The gate of the first amplification transistor T3 is formed as the control terminal of the amplification unit 131. The first terminal of the first amplification transistor T3 is electrically connected to the output terminal of the amplification unit 131, and the second terminal of the first amplification transistor T3 is electrically connected to the intermediate node.

[0087] The gate of the second amplifying transistor T4 is formed as the input terminal of the amplifying unit 131. The first terminal of the second amplifying transistor T4 is electrically connected to the second terminal of the amplifying transistor T4, and the second terminal of the second amplifying transistor T4 is electrically connected to the low-level signal reference terminal.

[0088] The gate-source voltage of each gain transistor is consistent with the gate-source voltage of the first amplifying transistor T3. Therefore, the transconductance of each gain transistor varies with temperature and process angle as well as the transconductance of the first amplifying transistor T3 varies with temperature and process angle. This allows the gain step of the variable gain amplifier to remain consistent under different temperature and process angle conditions, thus giving the variable gain amplifier high robustness.

[0089] Figure 3 The diagram shows the gain step and gain curves of the variable gain amplifier at -25℃, 25℃, and 125℃ when N is 4 (the horizontal axis represents sampling points, and the vertical axis represents gain). It can be seen that the gain step of the variable gain amplifier is consistent at different temperatures.

[0090] Figure 4 The diagram shows the gain step and gain curve of the variable gain amplifier at process corners TT, FF, and SS when N is 4 (the horizontal axis represents sampling points, and the vertical axis represents gain). It can be seen that the gain step of the variable gain amplifier is consistent across different process corners.

[0091] As a second aspect of this disclosure, a launching device is provided, such as Figure 5 As shown, the transmitting device includes an intermediate frequency variable gain amplifier 210, a mixer 220, an radio frequency variable gain amplifier 230 and a power amplifier 240 connected in sequence, wherein at least one of the intermediate frequency variable gain amplifier and the radio frequency variable gain amplifier is the variable gain amplifier provided in this disclosure.

[0092] Because the variable gain amplifier has high robustness, the transmitting device also has good performance.

[0093] Optionally, the transmitting device may be a mobile phone radio frequency front-end chip, a phased array radar receiver front-end chip, a K-Ka band base station receiver front-end chip or component, an automotive radar receiver front-end chip or component, other radio frequency millimeter wave front-end chips or components, or other radio frequency millimeter wave broadband driver chips or components.

[0094] Those skilled in the art will understand that all or some of the steps, systems, and devices disclosed above, as well as the functional modules / units, can be implemented as software, firmware, hardware, or suitable combinations thereof. In hardware implementations, the division between functional modules / units mentioned in the above description does not necessarily correspond to the division of physical components; for example, a physical component may have multiple functions, or a function or step may be performed collaboratively by several physical components.

[0095] Example embodiments have been disclosed herein, and while specific terminology has been used, it is for illustrative purposes only and should be construed as such, and is not intended to be limiting. In some instances, it will be apparent to those skilled in the art that features, characteristics, and / or elements described in connection with particular embodiments may be used alone, or in combination with features, characteristics, and / or elements described in connection with other embodiments, unless otherwise expressly indicated. Therefore, those skilled in the art will understand that various changes in form and detail may be made without departing from the scope of this disclosure as set forth by the appended claims.

Claims

1. A variable gain amplifier, comprising: Voltage signal input terminal; A high-level generation module includes a first high-level signal output terminal and a second high-level signal output terminal. The high-level generation module is used to convert a voltage signal input through the voltage signal input terminal into a first high-level signal and a second high-level signal. Both the first high-level signal and the second high-level signal are positively correlated with the temperature of the variable gain amplifier, and the potential of the first high-level signal is higher than that of the second high-level signal. A switch signal conversion module includes a high-level signal input terminal, N digital signal input terminals, and N switch signal output terminals. The high-level signal input terminal is electrically connected to the first high-level signal output terminal, and the N switch signal output terminals correspond one-to-one with the N signal input terminals. The switch signal conversion module is used to output a gain control signal associated with the signal output from the high-level signal input terminal through the corresponding switch signal output terminals under the control of the signal input at the digital signal input terminal. An amplification module includes an amplification unit and an N-stage gain control unit. Each of the N gain control units corresponds one-to-one with one of the N switch signal output terminals of the switch signal conversion module. The control terminal of each gain control unit is electrically connected to its corresponding switch signal output terminal. The input terminal of each gain control unit is electrically connected to the voltage signal input terminal. The output terminal of each gain control unit is electrically connected to the intermediate node of the amplification unit. Under the control of the signal received at its control terminal, the gain control unit can provide a temperature-positive voltage signal to the intermediate node. The input terminal of each amplification unit is electrically connected to the second high-level signal output terminal, and the control terminal of each amplification unit is electrically connected to the first high-level signal output terminal. Here, N is a positive integer not less than 1. The switch signal conversion module includes N switch signal conversion units, each corresponding to one of the N digital signal input terminals and one of the N switch signal output terminals. The control terminal of the switch signal conversion unit is electrically connected to the corresponding digital signal input terminal, the input terminal of the switch signal conversion unit is electrically connected to the first high-level signal terminal, and the output terminal of the switch signal conversion unit is electrically connected to the corresponding switch signal output terminal. When the control terminal of the switch signal conversion unit receives a valid digital signal for the switch signal conversion unit, the input terminal of the switch signal conversion unit is connected to the output terminal of the switch signal conversion unit.

2. The variable gain amplifier according to claim 1, wherein, The switching signal conversion unit includes a first switching signal conversion transistor and a second switching signal conversion transistor. The gates of the first and second switching signal conversion transistors are electrically connected and are also electrically connected to corresponding digital signal input terminals. The first terminal of the first switching signal conversion transistor is electrically connected to the first high-level signal input terminal, and the second terminal of the first and second switching signal conversion transistors is electrically connected to the first terminal of the second switching signal conversion transistor. The second terminal of the second switching signal conversion transistor is electrically connected to a low-level signal reference terminal. One of the first and second switching signal conversion transistors is a P-type transistor, and the other is an N-type transistor.

3. The variable gain amplifier according to claim 2, wherein, The first switching signal conversion transistor is a P-type transistor, and the second switching signal conversion transistor is an N-type transistor.

4. The variable gain amplifier according to claim 1, wherein, The high-level generation module includes: A current source, wherein the input terminal of the current source is formed as a voltage input terminal, the current source is capable of converting the voltage signal input at the voltage input terminal into current, and the current is positively correlated with the temperature of the variable gain amplifier; A current conversion unit is provided, wherein the input terminal of the current conversion unit is electrically connected to the output terminal of the current source, the first output terminal of the current conversion unit is configured as the first high-level signal output terminal, and the second output terminal of the current conversion unit is configured as the second high-level signal output terminal. The current conversion unit is used to convert the current into the first high-level signal and the second high-level signal respectively, and outputs the first high-level signal through the first output terminal and the second high-level signal through the second output terminal.

5. The variable gain amplifier according to claim 4, wherein, The high-level generation module includes a first current conversion transistor and a second current conversion transistor; The gate of the first current conversion transistor is electrically connected to the first electrode of the first current conversion transistor and forms the input terminal of the high-level generation module; the first output terminal is electrically connected to the first electrode of the first current conversion transistor. The gate of the second current conversion transistor is electrically connected to the first terminal of the second current conversion transistor, and both are electrically connected to the second terminal of the first current conversion transistor. The second output terminal is electrically connected to the first terminal of the second current conversion transistor, and the second terminal of the second current conversion transistor is electrically connected to the low-level signal reference terminal.

6. The variable gain amplifier according to any one of claims 1 to 5, wherein, The gain control unit includes a gain transistor, the gate of which is formed as the control terminal of the gain control unit, the first terminal of which is electrically connected to the voltage signal input terminal, and the second terminal of which is formed as the output terminal of the gain control unit.

7. The variable gain amplifier according to any one of claims 1 to 5, wherein, The amplification unit includes a first amplification transistor and a second amplification transistor. The gate of the first amplification transistor is formed as the control terminal of the amplification unit. The first terminal of the first amplification transistor is electrically connected to the output terminal of the amplification unit, and the second terminal of the first amplification transistor is electrically connected to the intermediate node. The gate of the second amplifying transistor is formed as the input terminal of the amplification unit, the first terminal of the second amplifying transistor is electrically connected to the second terminal of the amplifying transistor, and the second terminal of the second amplifying transistor is electrically connected to the low-level signal reference terminal.

8. The variable gain amplifier according to claim 7, wherein, The amplification unit further includes a resistor element, one end of which is electrically connected to the voltage signal input terminal, and the other end of which is electrically connected to the first electrode of the first amplifying transistor.

9. A transmitting device, the transmitting device comprising an intermediate frequency variable gain amplifier, a mixer, an radio frequency variable gain amplifier, and a power amplifier connected in sequence, wherein, At least one of the intermediate frequency variable gain amplifier and the radio frequency variable gain amplifier is a variable gain amplifier as described in any one of claims 1 to 8.

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