An internal heat wall type molecular beam epitaxy cavity

Abstract

The present application provides a kind of inner hot wall type molecular beam epitaxy cavity.Reaction cavity inside upper is equipped with telescopic transmission mechanism and bellows, and the telescopic transmission mechanism and bellows are equipped with tray heating device and tray support, and the lower part of reaction cavity is equipped with quartz ring, and the quartz ring is equipped with gas source inlet, vacuum exhaust port, source furnace one and source furnace two.Reaction cavity lower side is equipped with infrared heating light source one and infrared heating light source two.According to the material and process flow of molecular beam epitaxy, the light source power of infrared heating light source one and infrared heating light source two is adjusted to heat the quartz ring, and the quartz ring realizes uniform temperature in circumferential space through rotary motion.The present application provides a kind of inner hot wall type molecular beam epitaxy cavity, effectively reduces the deposition and volatilization of material on the side wall, so as to realize high-quality molecular beam epitaxy heterojunction.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of thin film preparation, and particularly relates to an internal hot-wall type molecular beam epitaxy cavity. BACKGROUND

[0002] The inner wall of the existing molecular beam epitaxy cavity is a cold wall made of metal material. During the molecular beam epitaxy growth process, the source material evaporated from the source furnace will be deposited on the wall and continuously volatilized in the subsequent growth. According to the type of the deposited material, the volatilization may last for several hours or even several days. In order to reduce the influence of the wall deposition, people install a heating blanket outside the molecular beam epitaxy cavity, and the temperature of the reaction cavity is improved and maintained through the continuous heating of the heating blanket. However, this method is difficult to achieve uniform heating of the entire cavity shell, and the heating temperature is limited, and the actual effect is also limited.

[0003] With the increasing complexity of the device structure of the molecular beam epitaxy growth, the heterojunction interface between the layers has a great influence on the performance of the device, and therefore it is very important to reduce the influence of the deposition of the material in the front part on the subsequent growth. SUMMARY

[0004] A high-quality heterojunction device requires a steep material interface. The present application provides an internal hot-wall type molecular beam epitaxy cavity, which effectively reduces the deposition and volatilization of the material on the side wall, thereby realizing high-quality molecular beam epitaxy heterojunction.

[0005] The internal hot-wall type molecular beam epitaxy cavity provided by the present application is characterized in that a servo motor one is installed on the top of the outside of the reaction cavity, the servo motor one transmits the rotary motion to the telescopic transmission mechanism and the bellows on the upper side of the inside of the reaction cavity through a magnetic transmission device one, a tray heating device and a tray support are installed on the telescopic transmission mechanism, and the tray support can place a substrate. A servo motor two is installed on the bottom of the outside of the reaction cavity, the servo motor two transmits the rotary motion to the quartz ring on the lower side of the inside of the reaction cavity through a magnetic transmission device two, the lower part of the reaction cavity is provided with the quartz ring, and the quartz ring is provided with a gas source inlet, a vacuum air outlet, a source furnace one and a source furnace two. An inlet is installed on the upper side of the reaction cavity, and infrared heating light sources one and two are installed on the lower side of the reaction cavity.

[0006] The tray heating device and the tray support are inserted into the quartz ring during the molecular beam epitaxy process. The tray heating device and the tray support are sealed during the movement process through the bellows. The tray heating device and the tray support are inserted into and withdrawn from the inside of the quartz ring through the telescopic transmission mechanism and the bellows.

[0007] During molecular beam epitaxy (MBE), infrared heating light sources one and two on the lower side of the reaction chamber irradiate the quartz ring. The power of these two light sources is adjusted according to the materials and process flow of MBE growth, ensuring the quartz ring temperature exceeds 100°C. During MBE growth, the quartz ring rotates at a constant speed (less than 30 rpm) via a magnetic drive device two.

[0008] The advantage of this invention is that the temperature of the quartz ring can be reasonably adjusted according to the type of epitaxial growth material and the process method. By significantly reducing the adsorption and residue of the preceding growth material on the sidewall, the purity of the subsequent growth material is improved, thereby achieving high-quality heterojunction thin film materials. Attached Figure Description

[0009] Figure 1 This is a schematic side cross-sectional view of the structure of the present invention.

[0010] Explanation of reference numerals in the attached drawings: 101 Reaction chamber, 102 Servo motor 1, 103 Magnetic drive device 1, 104 Sample inlet, 105 Infrared heating light source 1, 106 Infrared heating light source 2, 107 Servo motor 2, 108 Gas source injection port, 109 Source furnace 1, 110 Source furnace 2, 111 Vacuum extraction port, 112 Magnetic drive device 2, 201 Corrugated sealing tube, 202 Tray heating device, 203 Telescopic transmission mechanism, 204 Tray support, 205 Substrate, 301 Quartz ring. Detailed Implementation

[0011] like Figure 1 The internally heated wall molecular beam epitaxy cavity shown has a servo motor 102 mounted on the top of the reaction chamber 101. The servo motor 102 transmits rotational motion to a telescopic transmission mechanism 203 and a bellows 201 located above the interior of the reaction chamber 101 via a magnetic transmission device 103. A tray heating device 202 and a tray support 204 are mounted on the telescopic transmission mechanism 203. The tray support 204 can hold a substrate 205. A second servo motor 107 is mounted on the bottom of the reaction chamber 101. The second servo motor 107 transmits rotational motion to a quartz ring 301 located below the interior of the reaction chamber 101 via a magnetic transmission device 112. The quartz ring 301 contains a gas source injection port 108, a vacuum extraction port 111, a source furnace 109, and a source furnace 110. An inlet 104 is installed on the upper side of the reaction chamber 101, and an infrared heating light source 105 and an infrared heating light source 106 are installed on the lower side of the reaction chamber 101.

[0012] After the cavity is evacuated and other preparations are completed, during the molecular beam epitaxy growth of the heterojunction, the quartz ring 301 is rotated at a speed of 15 rpm. The quartz ring is heated by infrared heating light source 105 and infrared heating light source 106, and the temperature of the quartz ring 301 reaches 100°C as indicated by feedback from an infrared thermometer. The source furnaces 109 and 110 and the gas source injection port 108 are then turned on, and the heterogeneous thin film material is grown on the substrate 205.

[0013] The above embodiments mainly illustrate the internally heated wall molecular beam epitaxy cavity structure proposed in this invention, and the process method for growing heterogeneous thin film materials using the internally heated wall molecular beam epitaxy cavity proposed in this invention. Although only one embodiment of the invention has been described, the invention can be implemented in many other ways without departing from its spirit and scope. Therefore, it should be understood that the above embodiments are not limited to this invention, and all modifications, substitutions, etc., made within the spirit and principles of this invention should be included within the protection scope of this invention.

Claims

1. An internally heated wall type molecular beam epitaxy cavity, characterized in that, A servo motor is installed at the top of the reaction chamber. The servo motor transmits rotational motion to the telescopic transmission mechanism and bellows inside the reaction chamber via a magnetic transmission device. The telescopic transmission mechanism is equipped with a tray heating device and a tray support. The tray support can hold a substrate. The telescopic transmission mechanism allows the tray heating device and tray support to extend into and exit the quartz ring. The bellows ensures sealing during movement. A servo motor is installed at the bottom of the reaction chamber. The servo motor transmits rotational motion to the quartz ring inside the reaction chamber via a magnetic transmission device. The quartz ring is installed at the bottom of the reaction chamber. Inside the quartz ring are a gas source injection port, a vacuum extraction port, a source furnace one, and a source furnace two. A sample inlet is installed on the upper side of the reaction chamber. Infrared heating light source one and infrared heating light source two are installed on the lower side of the reaction chamber.

2. The internally heated wall type molecular beam epitaxy cavity according to claim 1, characterized in that, During molecular beam epitaxy, infrared heating light source one and infrared heating light source two on the lower side of the reaction chamber irradiate the quartz ring. The power of infrared heating light source one and infrared heating light source two is adjusted according to the material and process flow of molecular beam epitaxy to make the temperature of the quartz ring greater than 100℃.

3. The internally heated wall type molecular beam epitaxy cavity according to claim 1, characterized in that, During molecular beam epitaxy, the quartz ring rotates at a constant speed of less than 30 rpm via a magnetic drive device.

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