A solar cell with nickel oxide and phosphotungstic acid as interface layer and a preparation method thereof

Abstract

This invention discloses a solar cell with nickel oxide and phosphotungstic acid as the interface layer and its preparation method. The solar cell structure includes: a substrate, an anode, an anode interface layer, a photoactive layer, a cathode interface layer, and a cathode. The specific preparation method is as follows: S1. Apply an anode interface layer material dispersion to the anode surface and perform a first annealing to obtain intermediate product 1; S2. Apply a photoactive layer material dispersion to the surface of intermediate product 1 and perform a second annealing to obtain intermediate product 2; S3. Apply a cathode interface layer material dispersion to the surface of intermediate product 2 to obtain intermediate product 3; S4. Apply a metal electrode to the surface of intermediate product 3 to obtain a solar cell with nickel oxide and phosphotungstic acid as the interface layer. This invention prepares the anode interface layer by combining nickel oxide and phosphotungstic acid, resulting in an organic solar cell with good PCE, and the anode interface layer preparation conditions and processes are relatively relaxed.

Description

Technical Field

[0001] This invention belongs to the field of organic semiconductor thin-film solar cell technology, specifically relating to a solar cell with nickel oxide and phosphotungstic acid as the interface layer and its preparation method. Background Technology

[0002] Organic solar cells (OSCs) have significant application potential due to their solution-processable, flexible, semi-transparent, and lightweight properties. In recent years, through the development of conjugated polymer donor and fused-ring electron acceptor materials, and the manipulation of active layer morphology, the power conversion efficiency (PCE) of OSC single-junction devices has exceeded 19%. An interface layer is typically introduced between the active layer and the electrode to optimize interfacial contact and ensure efficient charge extraction. In high-performance OSCs, the interface layer is an essential component, playing a crucial role in achieving high device performance. However, current anode interface layer materials in OSCs are insufficient, limiting their development. For example, the commonly used anode interface layer material in conventional OSCs is a mixture of poly(3,4-ethylenedioxythiophene) (PEDOT) and polystyrene sulfonate (PSS), but this mixture is expensive, resulting in high OSC production costs and hindering widespread adoption.

[0003] Therefore, there is an urgent need for a high-performance OSC that is readily available and easy to prepare, in order to meet the needs of the market and technological development. Summary of the Invention

[0004] To overcome the shortcomings of the prior art, the present invention utilizes nickel oxide: phosphotungstic acid (NiO) x By combining PWA with the construction of an interface layer, a high-performance organic solar cell with readily available materials and simple fabrication can be achieved.

[0005] Specifically, in this invention, NiO x The interface layer formed by the combination of PWA and pure NiO x Compared to the active layer, the interface layer has a smoother morphology, which is more conducive to forming a good interfacial contact with the active layer, realizing effective charge transport, and Ni in the interface layer 2+ Oxidized by PWA to Ni 3+ Ni 3+ / Ni 2+ A higher ratio results in higher conductivity in the composite interface layer, further promoting efficient charge transport. In the composite anode interface layer, NiO... x When combined with PWA, a synergistic effect is achieved, enabling good contact between the anode interface layer, the photoactive layer, and the metal electrode. This allows for better regulation of hole and electron transport balance and reduces molecular recombination. NiO xThe PWA composite anode interface layer maintains high transmittance and high work function, and the organic solar cells prepared with it have a PCE similar to those prepared with PEDOT:PSS. Furthermore, NiO... x PWA is easy to prepare and has a lower cost, which is conducive to the industrialization and large-scale production of devices.

[0006] The NiO x The PWA (Polymer Interface Layer) solar cell is implemented using the following technical solutions:

[0007] One object of the present invention is to provide a NiO x PWA is a solar cell with an interface layer, wherein NiO is used. x The structure of a solar cell with a PWA (photoactive interface layer) includes the following components: substrate, anode, anode interface layer, photoactive layer, cathode interface layer, and cathode.

[0008] The anode interface layer material is NiO. x PWA blending;

[0009] The NiO x The PWA ratio is 1:1 to 1:20.

[0010] Furthermore, NiO x Prepared according to the literature (Advanced Energy Materials, 2019, 9(19): 1-10).

[0011] Furthermore, the thickness of the anode interface layer is 10-50 nm.

[0012] Furthermore, in the photoactive layer, the donor material is selected from a p-type organic semiconductor based on specific unit 1, and the acceptor material is selected from an n-type organic semiconductor based on specific unit 2; wherein, specific unit 1 is selected from one or more of the following structures:

[0013]

[0014] The specific unit 2 is selected from one or more of the following structures:

[0015]

[0016] Wherein, R1-R6 are independently selected from alkyl groups having 1-40 carbon atoms, or alkyl derivatives having 1-40 carbon atoms;

[0017] One or more carbon atoms on the alkyl derivative are replaced by one or more of hydrogen atoms, oxygen atoms, alkenyl, alkynyl, aryl, hydroxyl, amino, carbonyl, carboxyl, ester, cyano, and nitro groups;

[0018] And / or,

[0019] One or more hydrogen atoms on the alkyl derivative are replaced by one or more of fluorine, chlorine, bromine, and iodine atoms;

[0020] X1-X6 are independently selected from one or more of hydrogen atoms, fluorine atoms, chlorine atoms, cyano groups, and nitro groups.

[0021] Furthermore, the photoactive layer is preferably selected from at least one of PMT50:Y6 or PM6:Y6.

[0022] Furthermore, the photoactive layer is more preferably PM6:Y6.

[0023] Furthermore, the thickness of the photoactive layer is 80-120 nm.

[0024] Furthermore, the cathode interface layer is preferably selected from at least one of PDINO, PFN, or PFN-Br.

[0025] Furthermore, the cathode interface layer is more preferably PDINO.

[0026] The thickness of the cathode interface layer is 10-15 nm.

[0027] Furthermore, the anode is selected from at least one of ITO and FTO; the anode thickness is 130-200 nm.

[0028] Furthermore, the cathode is selected from at least one of Ag, Al, and Cu metal electrodes; the cathode thickness is 100-150 nm.

[0029] Another object of the present invention is to provide a NiO x The method for fabricating a solar cell with a PWA (partially applied surface layer) interface includes the following steps:

[0030] S1. Apply an anode interface layer material dispersion to the anode surface and perform a first annealing to obtain intermediate product 1;

[0031] S2. Apply a dispersion of photoactive layer material to the surface of intermediate product 1 and perform secondary annealing to obtain intermediate product 2;

[0032] S3. Apply a cathode interface layer material dispersion to the surface of intermediate product 2 to obtain intermediate product 3;

[0033] S4. Apply a metal electrode to the surface of intermediate product 3 to obtain the solar cell with nickel oxide and phosphotungstic acid as the interface layer.

[0034] Furthermore, the first annealing is performed at 90-120℃ for 5-15 minutes; the second annealing is performed at 90-110℃ for 5-15 minutes.

[0035] Furthermore, the concentration of the anode interface layer material dispersion is 10-20 mg·mL. -1 .

[0036] Furthermore, the preferred ratio of the photoactive layer material dispersion is PM6:Y6 = 1:1.2-1:1.5;

[0037] The concentration of the photoactive layer material dispersion is 1-1.5 mg·mL. -1 .

[0038] The present invention has the following beneficial effects:

[0039] 1. This invention uses NiO x A composite anode interface layer was prepared by mixing PWA, and then combined with NiO alone. x Compared to NiO x The PWA composite anode interface layer has a smoother surface morphology, which is beneficial for forming a better interfacial contact with the active layer. The addition of PWA to NiO... x :Ni in PWA 3+ / Ni 2+ The characteristic peak ratio increases, NiO x The PWA interface layer has high electrical conductivity, which is more conducive to charge transport.

[0040] 2. NiO x PWA has a high work function and a small contact barrier with the active layer. NiO x PWA devices can achieve PCE close to that of PEDOT:PSS OSCs, and the devices exhibit better stability. Compared to commonly used PEDOT:PSS, NiO... x PWA only requires low-temperature processing and is simpler to prepare.

[0041] 3. NiO x The materials prepared by PWA are simple to prepare, have a higher cost-performance ratio than PEDOT:PSS, are more suitable for industrial production and large-scale promotion, and have great development potential. Attached Figure Description

[0042] Figure 1 This is a schematic diagram of the structure of the solar cells in Embodiment 1, Comparative Example 1, Comparative Example 2, and Comparative Example 3 of the present invention.

[0043] Figure 2 The PEDOT:PSS interface layer in Comparative Example 1 and the NiO in Comparative Example 2 are examples of the present invention. xInterface layer, PWA interface layer in Comparative Example 3, NiO in Example 1 x :Schematic diagram of the transmission spectrum of the PWA interface layer.

[0044] Figure 3 The PEDOT:PSS interface layer in Comparative Example 1 and the NiO in Comparative Example 2 are examples of the present invention. x Interface layer, PWA interface layer in Comparative Example 3, NiO in Example 1 x : Schematic diagram of the surface morphology of the PWA interface layer.

[0045] Figure 4 The NiO in Comparative Example 2 of this invention x Interface layer and NiO in Example 1 x XPS Ni 2p PWA interface layer 3 / 2 Test spectrum.

[0046] Figure 5 The PEDOT:PSS interface layer in Comparative Example 1 and the NiO in Comparative Example 2 are examples of the present invention. x Interface layer, PWA interface layer in Comparative Example 3, NiO in Example 1 x :Schematic diagram of the work function of the PWA interface layer.

[0047] Figure 6 The PEDOT:PSS interface layer in Comparative Example 1 and the NiO in Comparative Example 2 are examples of the present invention. x Interface layer, PWA interface layer in Comparative Example 3, NiO in Example 1 x :Schematic diagram of the conductivity of the PWA interface layer.

[0048] Figure 7 These are graphs showing the JV and EQE test results of the devices in Embodiment 1, Comparative Example 1, Comparative Example 2, and Comparative Example 3 of the present invention. Figure 7 (a) shows the JV curve of the device; Figure 7 (b) shows the EQE test results of the device.

[0049] Figure 8 The NiO in Embodiment 1 of this invention x The PCE change of the device when the PWA ratio changes.

[0050] Figure 9 This is a schematic diagram showing the test results of the solar cell stability of the devices in Embodiment 1, Comparative Example 1, and Comparative Example 2 of the present invention. Detailed Implementation

[0051] To more clearly illustrate the technical solution of the present invention, the following embodiments are provided. Unless otherwise stated, the raw materials, reactions, and post-processing methods appearing in the embodiments are all commercially available raw materials and technical methods well known to those skilled in the art.

[0052] The anodes used in the embodiments and comparative examples of this invention are all made of ITO material.

[0053] The substrates used in the embodiments and comparative examples of this invention are all 0.6 mm thick glass.

[0054] The structures of the solar cells in the embodiments and comparative examples of this invention are all the same. Figure 1 .

[0055] NiO of the present invention embodiments and comparative examples x All were prepared according to the literature (Advanced Energy Materials, 2019, 9(19): 1-10).

[0056] Example 1

[0057] With NiO x The fabrication of a solar cell with a PWA (partially applied surface area) interface layer includes the following steps:

[0058] S1. Place the cleaned anode and substrate into a UV ozone cleaner for UVO treatment for 15 minutes. Then, spin-coat a 15 mg·mL⁻¹ solution onto the anode surface. -1 NiO x PWA anode interface layer solution, in which NiO x The PWA ratio is 1:3, forming an anode interface layer with a thickness of 20nm, to obtain intermediate product 1;

[0059] S2. Dissolve PM6 and Y6 in chloroform solution at a mass ratio of 1:1.2 to form a solution with a concentration of 16 mg·mL⁻¹. -1 The solution was prepared by adding 0.5% chloronaphthalene solution by volume, stirring for 3 hours, and then spin-coating the solution onto the anodic interface layer of intermediate product 1. Annealing was then performed at 110°C to form a 90 nm thick photoactive layer. The layer was then placed in a 1×10⁻⁶ ohmmeter plate. -4 After being placed under vacuum at Pa overnight, intermediate product 2 was obtained.

[0060] S3. Dissolve PDINO in ethanol to a concentration of 1 mg / mL. -1 After stirring overnight, the mixture was filtered, and PDINO solution was spin-coated onto the photoactive layer of intermediate product 2 to form a cathode interface layer with a thickness of 10 nm, thus obtaining intermediate product 3.

[0061] S4. Place intermediate product 3 in a vacuum evaporation chamber and evaporate it under a vacuum of 2×10⁻⁶.-6 Under Pa conditions, a metal electrode Ag is deposited on the cathode interface layer of intermediate product 3 to form a cathode with a thickness of 120 nm, thereby obtaining the NiO-based cathode. x PWA is a solar cell with an interface layer.

[0062] Comparative Example 1

[0063] The fabrication of a solar cell using PEDOT:PSS as the interface layer includes the following steps:

[0064] S1. Place the cleaned anode and substrate into a UV ozone cleaner and treat their surfaces with UVO for 15 minutes. Then spin-coat the anode surface with PEDOT:PSS anode interface layer solution to form an anode interface layer with a thickness of 25 nm to obtain intermediate product 1.

[0065] S2. Dissolve PM6 and Y6 in chloroform solution at a mass ratio of 1:1.2 to form a solution with a concentration of 16 mg·mL⁻¹. -1 The solution was prepared by adding 0.5% chloronaphthalene solution by volume, stirring for 3 hours, and then spin-coating the solution onto the anodic interface layer of intermediate product 1. Annealing was then performed at 110°C to form a 90 nm thick photoactive layer. The layer was then placed in a 1×10⁻⁶ ohmmeter plate. -4 After being placed under vacuum at Pa overnight, intermediate product 2 was obtained.

[0066] S3. Dissolve PDINO in ethanol to a concentration of 1 mg / mL. -1 After stirring overnight, the mixture was filtered, and PDINO solution was spin-coated onto the photoactive layer of intermediate product 2 to form a cathode interface layer with a thickness of 10 nm, thus obtaining intermediate product 3.

[0067] S4. Place intermediate product 3 in a vacuum evaporation chamber and evaporate it under a vacuum of 2×10⁻⁶. -6 Under Pa conditions, a metal electrode Ag is deposited on the cathode interface layer of intermediate product 3 to form a cathode with a thickness of 120 nm, thus obtaining the solar cell with PEDOT:PSS as the interface layer.

[0068] Comparative Example 2

[0069] With NiO x The fabrication of a solar cell with an interface layer includes the following steps:

[0070] S1. Place the cleaned anode and substrate into a UV ozone cleaner for UVO treatment for 15 minutes, then spin-coat NiO onto the anode surface. x The anodic interface layer solution forms an anodic interface layer with a thickness of 15 nm, yielding intermediate product 1;

[0071] S2. Dissolve PM6 and Y6 in chloroform solution at a mass ratio of 1:1.2 to form a solution with a concentration of 16 mg·mL⁻¹. -1 The solution was prepared by adding 0.5% chloronaphthalene solution by volume, stirring for 3 hours, and then spin-coating the solution onto the anodic interface layer of intermediate product 1. Annealing was then performed at 110°C to form a 90 nm thick photoactive layer. The layer was then placed in a 1×10⁻⁶ ohmmeter plate. -4 After being placed under vacuum at Pa overnight, intermediate product 2 was obtained.

[0072] S3. Dissolve PDINO in ethanol to a concentration of 1 mg / mL. -1 After stirring overnight, the mixture was filtered, and PDINO solution was spin-coated onto the photoactive layer of intermediate product 2 to form a cathode interface layer with a thickness of 10 nm, thus obtaining intermediate product 3.

[0073] S4. Place intermediate product 3 in a vacuum evaporation chamber and evaporate it under a vacuum of 2×10⁻⁶. -6 Under Pa conditions, a metal electrode Ag is deposited on the cathode interface layer of intermediate product 3 to form a cathode with a thickness of 120 nm, thereby obtaining the NiO-based cathode. x A solar cell with an interface layer.

[0074] Comparative Example 3

[0075] The fabrication of a solar cell with PWA as the interface layer includes the following steps:

[0076] S1. Place the cleaned anode and substrate into a UV ozone cleaner and treat their surfaces with UVO for 15 minutes. Then spin-coat the anode surface with PWA anode interface layer solution to form an anode interface layer with a thickness of 15 nm to obtain intermediate product 1.

[0077] S2. Dissolve PM6 and Y6 in chloroform solution at a mass ratio of 1:1.2 to form a solution with a concentration of 16 mg·mL⁻¹. -1 The solution was prepared by adding 0.5% chloronaphthalene solution by volume, stirring for 3 hours, and then spin-coating the solution onto the anodic interface layer of intermediate product 1. Annealing was then performed at 110°C to form a 90 nm thick photoactive layer. The layer was then placed in a 1×10⁻⁶ ohmmeter plate. -4 After being placed under vacuum at Pa overnight, intermediate product 2 was obtained.

[0078] S3. Dissolve PDINO in ethanol to a concentration of 1 mg / mL. -1 After stirring overnight, the mixture was filtered, and PDINO solution was spin-coated onto the photoactive layer of intermediate product 2 to form a cathode interface layer with a thickness of 10 nm, thus obtaining intermediate product 3.

[0079] S4. Place intermediate product 3 in a vacuum evaporation chamber and evaporate it under a vacuum of 2×10⁻⁶.-6 Under Pa conditions, a metal electrode Ag is deposited on the cathode interface layer of intermediate product 3 to form a cathode with a thickness of 120 nm, thus obtaining the solar cell with PWA as the interface layer.

[0080] Test case

[0081] The devices obtained in Example 1, Comparative Example 1, Comparative Example 2, and Comparative Example 3 were tested under AM 1.5G light intensity of 100 mW·cm. -2 The performance test was conducted, and the data obtained is summarized in Table 1.

[0082] Following the preparation method in Example 1, the NiO was adjusted... x Different concentrations of PWA resulted in devices with an AM 1.5G light intensity of 100 mW·cm². -2 The performance test was conducted, and the obtained data is summarized in Table 2.

[0083] Table 1. JV test results of Example 1, Comparative Example 1, Comparative Example 2, and Comparative Example 3

[0084]

[0085] Table 2 JV test results of Example 1

[0086]

[0087] The specific analysis is as follows:

[0088] Table 2 shows the adjustments made to NiO according to the preparation method in Example 1. x Devices with different PWA concentrations under AM 1.5G light intensity of 100mW·cm -2 Performance test results under irradiation conditions. Table 2 shows that when NiO... x PWA concentration is 15 mg / ml -1 The device achieves optimal performance with a PCE of 15.7%, an open-circuit voltage of 0.827V, and a short-circuit current density of 26.37mA·cm⁻¹. -2 The fill factor is 72.1%. When NiO x The total concentration of PWA was 10 mg / ml. -1 At that time, the device's PCE was 15.3%, open-circuit voltage was 0.813V, and short-circuit current density was 26.13mA·cm⁻¹. -2 The fill factor was 70.2%. When the concentration increased to 20 mg / ml... -1 At that time, the device's PCE was 15.2%, open-circuit voltage was 0.818V, and short-circuit current density was 26.29mA·cm⁻¹. -2 The fill factor is 70.5%. However, when NiO... xPWA concentration at 10 mg / mL -1 -20mg·mL -1 When the values ​​vary between these ranges, the PCE of the device changes relatively little, indicating that it is based on NiO. x PWA devices are less sensitive to concentration changes.

[0089] Figure 2 The PEDOT:PSS interface layer in Comparative Example 1 and the NiO in Comparative Example 2 are examples of the present invention. x Interface layer, PWA interface layer in Comparative Example 3, NiO in Example 1 x :Schematic diagram of the transmission spectrum of the PWA interface layer, from Figure 2 It can be seen that several interface layers have high transmittance (>80%) in the 300-1000nm range, making them suitable as anode interface layers in devices.

[0090] Figure 3 The PEDOT:PSS interface layer in Comparative Example 1 and the NiO in Comparative Example 2 are examples of the present invention. x Interface layer, PWA interface layer in Comparative Example 3, NiO in Example 1 x : A schematic diagram of the surface morphology of the PWA interface layer, from Figure 3 It can be seen that PEDOT:PSS has a relatively uniform and smooth surface, and its R RMS It is 0.75nm. NiO x The thin film contained relatively obvious particles, resulting in a large Rw. RMS The wavelength is 10.06 nm. PWA exhibits a similar plate-like surface morphology, NiO x PWA also exhibits a similar plate-like morphology to PWA, indicating that NiO x The upper layer of a PWA might be a PWA. NiO x :PWA's R RMS It is 5.22nm. (Compared to NiO) x Compared to the interface, NiO x :PWA has a smaller R RMS This makes it easier to form a good interface contact with the active layer.

[0091] Figure 4 The NiO in Comparative Example 2 of this invention x Interface layer and NiO in Example 1 x XPS Ni 2p PWA interface layer 3 / 2 Test spectrum, by Figure 4 It can be seen that the peak centered at 861.0 eV corresponds to a vibrational peak in cubic rock salt NiO. The main peak centered at 854.2 eV belongs to the standard Ni-O octahedral bonding configuration. The peak centered at 855 eV-856 eV belongs to Ni2+ Vacancy-induced Ni 3+ State. In NiO x After adding PWA, Ni 3+ / Ni 2+ The proportion of characteristic peaks changed in NiO. x Ni 3+ / Ni 2+ The characteristic peak area ratio is 1.46, while NiO x :Ni in PWA 3+ / Ni 2+ The ratio increased to 2.16, indicating that the addition of the strong oxidant PWA increased the NiO content. x Ni inside 2+ Oxidation to Ni 3+ State, Ni 3+ The increase in the amount of material in the state is beneficial for the interface layer to obtain higher electrical conductivity.

[0092] Figure 5 The PEDOT:PSS interface layer in Comparative Example 1 and the NiO in Comparative Example 2 are examples of the present invention. x Interface layer, PWA interface layer in Comparative Example 3, NiO in Example 1 x :Schematic diagram of the work function of the PWA interface layer. The work function of the interface layer can be calculated by the following formula:

[0093] Φ=hv-E cutoff

[0094] Where hν is the incident ultraviolet photon energy (21.2 eV), E cutoff This is the cutoff energy for secondary electrons. Calculations show that the work function of PEDOT:PSS is 5.18 eV. PWA has a higher work function than PEDOT:PSS, at 5.23 eV. NiO x Its work function is slightly higher than PWA, at 5.25 eV. Compared to NiO alone... x Compared to NiO with PWA added x The work function of PWA only increased slightly to 5.26 eV. This is likely due to the extremely small amount of Ni content. 3+ The generation of dipoles altered the work function of AIL, consistent with XPS test results. Compared to PEDOT:PSS, NiO... x PWA has a higher work function and a smaller potential barrier with the active layer, which helps to extract charge from the active layer more effectively.

[0095] Figure 6 The PEDOT:PSS interface layer in Comparative Example 1 and the NiO in Comparative Example 2 are examples of the present invention. xInterface layer, PWA interface layer in Comparative Example 3, NiO in Example 1 x :Schematic diagram of the conductivity of the PWA interface layer, from Figure 6 It can be seen that, according to calculations, the conductivity of PEDOT:PSS is 4.84 × 10⁻⁶. -5 S·cm -1 The conductivity of PWA is 5.70 × 10⁻⁶. -5 S·cm -1 Compared to PEDOT:PSS and PWA, the inorganic material NiO... x It also has a higher electrical conductivity of 7.02 × 10⁻⁶. -5 S·cm -1 Thanks to NiO x High electrical conductivity, NiO x The PWA composite interface layer also exhibits high electrical conductivity, at 7.68 × 10⁻⁶. -5 S·cm -1 Higher electrical conductivity facilitates the transport of charge carriers in the device to the corresponding electrodes, resulting in superior device performance.

[0096] Figure 7 These are graphs showing the JV and EQE test results of the devices in Embodiment 1, Comparative Example 1, Comparative Example 2, and Comparative Example 3 of the present invention. Figure 7 (a) shows the JV curve of the device; Figure 7 (b) shows the EQE test results of the device, combined with Figure 7 Table 1 shows the devices of Example 1, Comparative Example 1, Comparative Example 2, and Comparative Example 3 at an AM 1.5G light intensity of 100 mW·cm. -2 The performance test results under irradiation conditions are shown in Table 1. The PCE of the solar cell device in Example 1 is 15.7%, the open-circuit voltage is 0.827V, and the short-circuit current density is 26.37mA·cm⁻¹. -2 The fill factor is 72.1%. The device in Comparative Example 1 has a PCE of 15.5%, an open-circuit voltage of 0.829V, and a short-circuit current density of 26.09 mA·cm⁻¹. -2 The fill factor is 71.8%. The device in Comparative Example 2 has a PCE of 9.9%, an open-circuit voltage of 0.714V, and a short-circuit current density of 22.71 mA·cm⁻¹. -2 The fill factor is 61.0%. The device in Comparative Example 3 has a PCE of 10.4%, an open-circuit voltage of 0.633V, and a short-circuit current density of 26.62 mA·cm⁻¹. -2 The fill factor is 61.6%. It can be seen that, compared with Comparative Example 1, Example 1 can obtain a PCE similar to that of Comparative Example 1.

[0097] Figure 8The NiO in Embodiment 1 of this invention x The PCE change of the device when the PWA ratio changes is obtained from Figure 8 It can be seen that NiO x When the ratio of PWA to PCE increases from 1:1 to 1:20, the PCE of the device changes by only 8%. This indicates that, based on NiO... x PWA devices for NiO x The ratio of PWA is not very sensitive to changes.

[0098] Figure 9 This is a schematic diagram illustrating the test results of the solar cell stability of the devices in Embodiment 1, Comparative Example 1, and Comparative Example 2 of the present invention. Figure 9 It can be seen that the performance of Comparative Example 2 device decreased significantly after 22 days, reaching only 82.2% of the initial PCE. In contrast, the device of Example 1 exhibits better stability than Comparative Example 2, retaining 95.2% of the initial PCE after 22 days and 93.8% after 50 days. Comparative Example 1 device still retains 93.4% of the initial PCE after 50 days, indicating that the stability of the device of Example 1 is essentially the same as that of Comparative Example 1.

[0099] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within the present invention.

[0100] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A solar cell with an interface layer of nickel oxide and phosphotungstic acid, characterized in that, The structure of the solar cell with nickel oxide and phosphotungstic acid as interface layer comprises the following components: substrate, anode, anode interface layer, photoactive layer, cathode interface layer and cathode. The anode interface layer material is a blend of nickel oxide and phosphotungstic acid. The ratio of nickel oxide and phosphotungstic acid is 1:1-1:

20.

2. The solar cell according to claim 1, wherein the interface layer is made of nickel oxide and phosphotungstic acid. The thickness of the anode interface layer is 10-50 nm.

3. The solar cell according to claim 1, wherein the interface layer is made of nickel oxide and phosphotungstic acid. In the photoactive layer, the donor material is selected from P-type organic semiconductors based on specific unit 1, and the acceptor material is selected from N-type organic semiconductors based on specific unit 2; wherein the specific unit 1 is selected from one or more of the following structures: The specific unit 2 is selected from one or more of the following structures: Wherein, R1-R6, independently selected from alkyl with carbon number 1-40, or alkyl derivative with carbon number 1-40; One or more carbon atoms on the alkyl derivative are substituted by one or more of hydrogen atoms, oxygen atoms, alkenyl, alkynyl, aryl, hydroxyl, amino, carbonyl, carboxyl, ester, cyano, nitro; And / or, One or more hydrogen atoms on the alkyl derivative are substituted by one or more of fluorine atoms, chlorine atoms, bromine atoms, iodine atoms; X1-X6, independently selected from one or more of hydrogen atoms, fluorine atoms, chlorine atoms, cyano, nitro.

4. The solar cell according to claim 3, wherein the interface layer is made of nickel oxide and phosphotungstic acid. The photoactive layer is selected from at least one of PMT50:Y6 or PM6:Y6; The thickness of the photoactive layer is 80-120 nm.

5. The solar cell with nickel oxide and phosphotungstic acid as interface layers according to claim 1, characterized in that, The cathode interface layer is selected from at least one of PDINO, PFN or PFN-Br; The thickness of the cathode interface layer is 10-15 nm.

6. The solar cell with nickel oxide and phosphotungstic acid as interface layers according to claim 1, characterized in that, The anode is selected from at least one of ITO, FTO; the thickness of the anode is 130-200 nm.

7. The solar cell with nickel oxide and phosphotungstic acid as interface layers according to claim 1, characterized in that, The cathode is selected from at least one of Ag, Al, Cu metal electrode; the thickness of the cathode is 100-150 nm.

8. The method for preparing a solar cell with nickel oxide and phosphotungstic acid as the interface layer as described in claim 1, characterized in that, Comprising the following steps: S1. Apply anode interface layer material dispersion on the surface of the anode, and perform first annealing to obtain intermediate product 1; S2. Apply photoactive layer material dispersion on the surface of intermediate product 1, and perform second annealing to obtain intermediate product 2; S3. Apply cathode interface layer material dispersion on the surface of intermediate product 2 to obtain intermediate product 3; S4. Apply metal electrode on the surface of intermediate product 3 to obtain the solar cell with nickel oxide and phosphotungstic acid as interface layer; The first annealing is annealing at 90-120℃ for 5-15 min; The second annealing is annealing at 90-110℃ for 5-15 min.

9. The method of claim 8, wherein the solar cell is prepared by using nickel oxide and phosphotungstic acid as the interface layer. The concentration of the anode interface layer material dispersion liquid is 10-20 mg·mL -1 .

10. The method for preparing a solar cell with nickel oxide and phosphotungstic acid as the interface layer according to claim 8, characterized in that, The ratio of the photoactive layer material dispersion is 1:1.2-1:1.5; The concentration of the photoactive layer material dispersion is 1-1.5 mg mL -1 .

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