A dual-core metal platinum complex and an organic electroluminescent device

Abstract

The present invention relates to the technical field of electronic materials, and particularly relates to a binuclear metal complex and an organic electroluminescent device. The binuclear platinum metal complex provided by the present invention has a structure shown in Formula I and can maintain high luminous efficiency and excellent stability in the emission from deep red to near infrared. The OLED device prepared by evaporating the binuclear platinum metal complex as a light-emitting layer material exhibits high external quantum efficiency and low roll-off of luminous efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic materials, and particularly relates to a binuclear metal platinum complex and an organic electroluminescent device. Background Art

[0002] As a third-generation lighting and display material, organic light-emitting diodes (OLEDs) have the advantages of being thin, flexible, having a wide viewing angle, high color contrast, fast response speed, etc., and are gradually favored by more people. Currently, they have been commercialized in the fields of high-end mobile phones, tablet computers, flexible wearable devices, etc.

[0003] OLED electroluminescent devices first appeared in 1963. Initially, electroluminescence was achieved using anthracene single crystals under a voltage of 400V, but the relatively high turn-on voltage was not conducive to its development. It wasn't until 1987 that electroluminescence with a turn-on voltage below 10V was achieved using the metal complex small molecule tris(8-hydroxyquinoline)aluminum (Alq3). Although the device efficiency was low, with a maximum EQE of only 1%, it undoubtedly opened the door to the development of OLEDs. As one of the core materials of OLED devices, the luminescence mechanism and performance of OLED luminescent molecules are the key factors restricting the performance of OLED devices. Currently, the materials that have been studied more are mainly thermally activated delayed fluorescence materials (TADF) and metal complex phosphorescent materials, both of which can achieve 100% theoretical exciton utilization efficiency and thus reach a higher device efficiency. Metal complex phosphorescent materials have been studied earlier. By introducing heavy atoms to strengthen the spin-orbit coupling effect of the molecule, radiative transitions from the lowest triplet state to the ground state are achieved to produce luminescence. Based on this mechanism, iridium complexes have received extensive attention in the academic and industrial circles due to their excellent luminescence performance and thermal stability. Currently, red and green iridium complexes have been industrially applied in the field of commercial OLED displays.

[0004] Although iridium complexes have good performance in OLED applications, the low reserves of iridium in the earth's crust have become a bottleneck restricting their application, and scientists have been exploring alternative materials for iridium complexes. Platinum has higher reserves compared to iridium. At the same time, it can form a rigid square tetradentate coordination structure, bringing a strong spin-orbit coupling effect while also suppressing non-radiative decay, thus achieving a higher device efficiency. Over time, a series of progress has been made in the research on red-light tetradentate platinum complexes.

[0005] Currently, the commercially available red light OLED materials are still mainly iridium complexes, and other materials still fail to meet the industrial use standards in terms of comprehensive performance. The excited state lifetime of phosphorescent platinum complexes is significantly longer than that of iridium complexes, and exciton quenching is likely to occur under high current density, thus limiting the maximum emission brightness and causing serious efficiency roll-off. At the same time, more complex molecular structures usually include relatively active chemical groups or chemical bonds, which is also not conducive to the stability of the device under an electric field. Summary of the Invention

[0006] Aiming at the deficiencies of the prior art, the purpose of the present invention is to overcome the problem that it is difficult for existing metal platinum complexes to achieve deep red to near-infrared light emission while having high efficiency and high device stability. A series of binuclear platinum complexes bridged by phenoxazine derivatives are designed and synthesized. Due to their strong metal interaction and rigid molecular skeleton, high-efficiency and high-stability emission in the deep red to near-infrared light region is achieved. It provides a new strategy for the design of deep red and near-infrared luminescent materials.

[0007] The solution adopted in the present invention is as follows:

[0008] A binuclear metal platinum complex has the following structure:

[0009]

[0010] Wherein, M is metal platinum; ring A and ring B are each independently selected from C6-C 18 aryl, C4-C 17 heteroaryl, ring A and ring B can be connected by a single bond or in the form of a fused ring, and ring A and ring B coordinate with the metal M center in the form of a negatively charged bidentate ligand;

[0011] Ring A and ring B are optionally substituted by one or more substituents R A or R B ; each R A , R B is each independently selected from hydrogen, deuterium, halogen, cyano, halogenated C1-C 40 alkyl, C1-C 40 alkyl, C2-C 40 alkenyl, C2-C 40 alkynyl, C6-C 48 aryl, C4-C 48 heteroaryl;

[0012] R 1 -R 7 are the same or different, and are each independently selected from hydrogen, deuterium, halogen, cyano, halogenated C1-C 40 alkyl, C1-C 40 alkyl, C2-C 40Alkenyl, C2-C 40 Alkynyl, C6-C 48 Aryl, C5-C 48 Heteroaryl;

[0013] Or R 1 -R 7 Adjacent ones of which are connected to each other to form a C3-C 10 Cycloalkyl, C6-C 30 Aryl, C5-C 30 Heteroaryl. The binuclear metal platinum complex provided by the present invention is a semi-lantern-shaped neutral binuclear platinum(II) complex formed by using phenoxazine and its derivatives as bridging bidentate ligands: [(L AB )M(μ-L czl )]2, where M is the transition metal platinum (Pt), and its oxidation valence state is +2; L czl Is a substituted (R 1-7 ) or unsubstituted phenoxazine, used as a bridging bidentate ligand, and its total valence is -1; L AB Is a bidentate chelating ligand formed by the connection of ring A and ring B, and its total valence is -1.

[0014] Preferably, R 1 -R 7 Are the same or different, and each independently selected from hydrogen, deuterium, halogen, cyano, halo C1-C 40 Alkyl, C1-C 10 Alkyl, C6-C 20 Aryl, C5-C 19 Heteroaryl;

[0015] Or R 1 -R 7 Adjacent ones of which are connected to each other to form a C3-C8 cycloalkyl, C6-C 10 Aryl, C5-C9 heteroaryl.

[0016] Preferably, R A 、R B Are each independently selected from F, Cl, Br, I, O(R’), S(R’), N(R’)2, SO2(R’), P(R’)2, PO(R’)2, PO(OR’)(R’), PO(OR’)2, Si(R’)3, C1-C 20 Alkyl, C2-C 20 Alkenyl, C2-C 20 Alkynyl, C1-C 20haloalkyl, C1-C8 alkoxy, C3-C8 cycloalkyl, C3-C8 heterocycloalkyl, C3-C8 aryl, C3-C8 heteroaryl; wherein, R' is independently selected from hydrogen, halogen, C1-C8 alkyl, C1-C8 haloalkyl, C3-C8 cycloalkyl, C3-C8 heterocyclic group, C3-C8 aryl, C3-C8 heteroaryl.

[0017] Preferably, ligand L AB has the following structure More preferably, ring A and ring B are each independently selected from phenyl, naphthyl, anthracenyl, fluorenyl, pyridyl, pyrimidinyl, pyridazinyl, pyrazinyl, quinolinyl, isoquinolinyl, benzopyrimidinyl, benzopyridazinyl, benzopyrazinyl, thienyl, pyrrolyl, pyrazolyl, thiazolyl, imidazolyl, oxazolyl, 1,2,4-triazole, 1,2,3-triazole, isoxazolyl, isothiazolyl, indolyl, benzimidazolyl, benzothienyl, benzothiazolyl;

[0018] Preferably, in formula I

[0019] has the structure shown below:

[0020]

[0021] It can be understood that the dotted line in the above groups represents the connection site of the group to platinum metal.

[0022] Preferably, ligand Lczl has the structure shown below:

[0023] Preferably,

[0024] in formula I has the structure shown below:

[0025]

[0026] It can be understood that the dotted line in the above groups represents the connection site of the group to platinum metal.

[0027] Preferably, it has the structure shown in formula II below:

[0028]

[0029] wherein, M is platinum metal;

[0030] R 1 -R 10 、R 13 -R 15 are the same or different and are each independently selected from hydrogen, deuterium, halogen, cyano, C1-C 40 haloalkyl, C1-C 40alkyl, C1-C 10 alkoxy, C2-C 40 alkenyl, C2-C 40 alkynyl, C6-C 48 aryl, C5-C 48 heteroaryl;

[0031] X, X1-X3 are each independently selected from N or CR, and each R is the same or different and is independently selected from hydrogen, halogen, C1-C 40 haloalkyl, C1-C 40 alkyl.

[0032] Preferably, R 1 -R 7 are the same or different and are each independently selected from hydrogen, halogen, C1-C 10 alkyl;

[0033] R 8 -R 10 、R 13 -R 15 are the same or different and are each independently selected from hydrogen, halogen, C1-C 40 haloalkyl, C1-C 40 alkyl;

[0034] X1 is selected from N, X is selected from CR, X2 is selected from CR, X3 is selected from CR, or,

[0035] X is selected from N, X1 is selected from N, X2 is selected from CR, X3 is selected from CR, or,

[0036] X2 is selected from N, X3 is selected from N, X is selected from CR, X1 is selected from CR,

[0037] each R is the same or different and is independently selected from hydrogen, halogen, C1-C 40 haloalkyl, C1-C 40 alkyl.

[0038] Preferably, R 1 -R 7 are the same or different and are each independently selected from hydrogen;

[0039] R 8 -R 10 、R 13 -R 15 are the same or different and are each independently selected from hydrogen, halogen, C1-C 10 fluoroalkyl;

[0040] X1 is selected from N, X is selected from CR, X2 is selected from CR, X3 is selected from CR, or,

[0041] X is selected from N, X1 is selected from N, X2 is selected from CR, X3 is selected from CR, or,

[0042] X2 is selected from N, X3 is selected from N, X is selected from CR, X1 is selected from CR,

[0043] Each R is the same or different and is independently selected from hydrogen and halogen.

[0044] Preferably, it has the structure shown in Formula III below:

[0045]

[0046] Wherein, M is platinum metal;

[0047] R 1 -R 9 、R 12 -R 15 are the same or different and are independently selected from hydrogen, deuterium, halogen, cyano, C1-C 40 haloalkyl, C1-C 40 alkyl, C1-C 10 alkoxy, C2-C 40 alkenyl, C2-C 40 alkynyl, C6-C 48 aryl, C5-C 48 heteroaryl;

[0048] or R 8 -R 9 、R 12 -R 15 Among them, two adjacent ones are connected to each other to form C3-C 10 cycloalkyl, C6-C 30 aryl, C5-C 30 heteroaryl.

[0049] Preferably, R 1 -R 7 are the same or different and are independently selected from hydrogen, halogen, C1-C 10 alkyl;

[0050] R 8 -R 9 、R 12 -R 15 are the same or different and are independently selected from hydrogen, halogen, C1-C 10 alkyl, or R 8 -R 9 、R 12 -R 15 Among them, two adjacent ones are connected to each other to form C6-C 30 aryl.

[0051] Preferably, R 1 -R 7 are the same or different and each independently selected from hydrogen;

[0052] R 12 -R 15 are the same or different and each independently selected from hydrogen;

[0053] R 8 -R 9 are the same or different and each independently selected from hydrogen, C1-C 10 alkyl, or two adjacent ones of R 8 -R 9 are connected to each other to form a C6-C 30 aryl.

[0054] Preferably,

[0055] the halogen is selected from fluorine, chlorine, bromine, iodine;

[0056] the C1-C 10 alkyl is selected from methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl;

[0057] the C1-C 10 alkoxy is selected from methoxy, ethoxy;

[0058] the C 6- C 30 aryl is selected from phenyl, naphthyl, anthryl;

[0059] the C1-C 10 fluoroalkyl is selected from trifluoromethyl, trifluoroethyl, pentafluoroethyl.

[0060] Preferably, the binuclear metal platinum complex has the structure shown below:

[0061]

[0062]

[0063]

[0064]

[0065]

[0066]

[0067]

[0068]

[0069] The present invention also provides a method for preparing the above-mentioned metal complex, which comprises the following steps:

[0070] First, a bidentate chelating ligand L AB reacts with potassium chloroplatinate to prepare a corresponding chloro-bridged platinum dimer (abbreviated as [Pt(L AB )(μ-Cl)]2). Then, a ligand exchange reaction occurs under the action of a base to obtain a corresponding general formula complex.

[0071] The synthetic route of the compound described in the invention is as follows:

[0072]

[0073] The present invention also provides an organic electroluminescent device, which comprises a first electrode, a second electrode, and a light-emitting layer located between the first electrode and the second electrode. The light-emitting layer comprises any one or a combination of at least two of the above-mentioned binuclear metal platinum complexes.

[0074] Preferably, the light-emitting layer comprises the above-mentioned binuclear metal platinum complex and an organic functional material. By mass percentage, the proportion of the binuclear metal platinum complex is 0.01%-100%, and the proportion of the organic functional material is 0-99.9%.

[0075] It should be noted that the application of the metal complex described in the present invention is not limited to the device structure, and the film thickness or constituent materials of each layer can be appropriately changed according to the basic physical properties of the specific compound structure of the present invention.

[0076] The preparation method of the organic device described in the present invention is a conventional method in the art. Optionally, the preparation of the organic electroluminescent device comprises the following steps: using a glass substrate coated with ITO as a transparent support substrate, and sequentially depositing each organic layer and a metal electrode on the ITO film of the transparent support substrate.

[0077] Advantages of the present invention:

[0078] The present invention provides a class of phosphorescent materials of binuclear platinum metal complexes with a semi-lantern structure, using as an organic ligand. The molecule ingeniously uses a phenoxazine derivative as a bridging ligand, and the rigid skeleton can inhibit the non-radiative transition of the triplet state. At the same time, the platinum-platinum metal distance within the molecule reaches It is almost the shortest non-bonding platinum-platinum distance in the semi-lantern structure that can be achieved currently. This structural feature endows it with strong metal-metal interaction forces, which causes a significant red shift in the optical color. At the same time, the metal-metal interaction can improve the stability of the molecule. In addition, by modifying the C^N cyclometalated ligand, its electron-withdrawing ability is enhanced, further causing a red shift in the optical color. Based on the complexes invented hereby, they exhibit high-efficiency luminescence from deep red to near-infrared. They can also maintain high luminescence efficiency and excellent stability in the emission from deep red to near-infrared band. When used as the luminescent layer material for evaporation coating, the OLED devices show high external quantum efficiency and low luminescence efficiency roll-off. Therefore, the present invention provides a molecular design method for realizing high-efficiency, low-roll-off deep red to near-infrared luminescent phosphorescent materials, which has great commercial application prospects. Description of the Drawings

[0079] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for use in the description of the specific embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0080] Figure 1 It is a schematic structural diagram of the organic electroluminescent device in the device embodiment of the present invention.

[0081] Figure 2 It is the electroluminescence spectrum diagram of the electroluminescent device based on compound C1 in the device embodiment 1 of the present invention.

[0082] Figure 3 It is the current density-voltage diagram of the electroluminescent device based on compound C1.

[0083] Figure 4 It is the luminance-voltage diagram of the electroluminescent device based on compound C1.

[0084] Figure 5 It is the external quantum efficiency-luminance diagram of the electroluminescent device based on compound C1.

[0085] Figure 6 It is the electroluminescence spectrum diagram of the electroluminescent device based on compound C2.

[0086] Figure 7 It is the current density-voltage diagram of the electroluminescent device based on compound C2

[0087] Figure 8 It is the luminance-voltage diagram of the electroluminescent device based on compound C2.

[0088] Figure 9It is the external quantum efficiency - luminance graph of the electroluminescent device based on compound C2.

[0089] Figure 10 It is the electroluminescence spectrum graph of the electroluminescent device based on compound C3.

[0090] Figure 11 It is the current density - voltage graph of the electroluminescent device based on compound C3.

[0091] Figure 12 It is the luminance - voltage graph of the electroluminescent device based on compound C3.

[0092] Figure 13 It is the external quantum efficiency - luminance graph of the electroluminescent device based on compound C3.

[0093] Figure 14 It is the electroluminescence spectrum graph of the electroluminescent device based on compound C4.

[0094] Figure 15 It is the current density - voltage graph of the electroluminescent device based on compound C4.

[0095] Figure 16 It is the luminance - voltage graph of the electroluminescent device based on compound C4.

[0096] Figure 17 It is the external quantum efficiency - luminance graph of the electroluminescent device based on compound C4.

[0097] Figure 18 It is the electroluminescence spectrum graph of the electroluminescent device based on compound C5.

[0098] Figure 19 It is the current density - voltage graph of the electroluminescent device based on compound C5.

[0099] Figure 20 It is the luminance - voltage graph of the electroluminescent device based on compound C5.

[0100] Figure 21 It is the external quantum efficiency - luminance graph of the electroluminescent device based on compound C5.

[0101] Figure 22 It is the electroluminescence spectrum graph of the electroluminescent device based on compound C6.

[0102] Figure 23 It is the current density - voltage graph of the electroluminescent device based on compound C6.

[0103] Figure 24 It is the luminance - voltage graph of the electroluminescent device based on compound C6.

[0104] Figure 25It is the external quantum efficiency - luminance graph of the electroluminescent device based on Compound C6.

[0105] Figure 26 It is the electroluminescent spectrum graph of the electroluminescent device based on Compound C7.

[0106] Figure 27 It is the current density - voltage graph of the electroluminescent device based on Compound C7.

[0107] Figure 28 It is the luminance - voltage graph of the electroluminescent device based on Compound C7.

[0108] Figure 29 It is the external quantum efficiency - luminance graph of the electroluminescent device based on Compound C7.

[0109] Figure 30 It is the relative electroluminescent intensity - operating time graph of the electroluminescent device based on Compound C1.

[0110] Explanation of reference numerals:

[0111] 1 - anode layer, 2 - hole injection layer, 3 - hole transport layer, 4 - electron blocking layer, 5 - light - emitting layer, 6 - hole blocking layer, 7 - electron transport layer, 8 - electron injection layer, 9 - cathode layer. Detailed implementation manners

[0112] The following embodiments are provided to better further understand the present invention. It is not limited to the described optimal implementation manner, and does not constitute a limitation on the content and protection scope of the present invention. Any product identical or similar to the present invention obtained by anyone under the inspiration of the present invention or by combining the features of the present invention with other prior - art features falls within the protection scope of the present invention.

[0113] In the following embodiments of the present invention, the chemicals used in the reactions are all obtained from regular channels and are not further purified. All reactions are carried out in an argon atmosphere.

[0114] In some specific implementation manners, the preparation of the following 7 compounds is taken as an example:

[0115]

[0116] Example 1

[0117] This example provides a preparation method of Compound C1, and its synthetic route is as follows:

[0118]

[0119] The preparation method of the said Compound C1 includes the following steps:

[0120] 1) Preparation of Intermediate L-1

[0121] Potassium tetrachloroplatinate (3.6 g, 8.7 mmol) and a magnetic stir bar were placed in a two-necked flask, and the system was evacuated and purged with argon three times. 45 ml of degassed ethylene glycol monoethyl ether and 15 ml of water were injected into the reaction system. Compound I-1 (1.66 g, 8.7 mmol) was injected, and the mixture was heated to 120 °C and reacted for 24 hours, then cooled to room temperature. The solvent was removed by distillation under reduced pressure, cooled to room temperature, 25 ml of ethanol was added, the solid was collected by filtration, and dried in vacuo for 24 hours to obtain a dark green solid (Intermediate L-1, yield 65%).

[0122] 2) Preparation of Compound C1

[0123] Intermediate L-1 (841 mg, 1.0 mmol), phenoxazine (460 mg, 2.5 mmol), and anhydrous potassium carbonate (345.6 mg, 2.5 mmol) were mixed in 20 mL of dry 1,2-dichloroethane and refluxed for 24 hours under argon protection. After cooling to room temperature, the solvent was removed by distillation under reduced pressure, and 20 ml of acetonitrile was added. The solid crude product was collected by filtration, washed three times with 60 ml of acetonitrile, purified by column chromatography, and dried in vacuo for 24 hours to obtain a red solid product (Compound C1, yield: 21%). 1 H NMR (400 MHz, CDCl3): δ 8.27 (d, J = 5.6 Hz, 2H), 8.00 (d, J = 8.7 Hz, 2H), 7.60–7.48 (m, 6H), 6.53–6.42 (m, 8H), 6.36 (d, J = 7.5 Hz, 4H), 6.27 (d, J = 6.4 Hz, 2H), 5.90 (t, J = 6.8 Hz, 2H). HRMS (ESI) m / z: [M]+: 1137.1349. Elemental analysis: C, 46.12; H, 2.22; N, 7.15.

[0124] Example 2

[0125] This example provides a preparation method of Compound C2, and its synthetic route is as follows:[

[0126]

[0127] The preparation method of the said Compound C2 comprises the following steps:

[0128] 1) The preparation method of Intermediate L-2 is the same as that of Intermediate L-1, except that Compound I-1 is replaced by I-2, and the obtained Intermediate L-2 is a yellow solid (yield 70%).

[0129] 2) The preparation method of compound C2 is the same as that of compound C1 (step 2), except that compound L-1 is replaced by L-2, and the obtained compound C2 is a red solid (yield 18%).

[0130] 1 H NMR(400MHz,CD2Cl2):δ8.22–8.13(m,2H),8.09(dd,J=7.8,1.6Hz,2H),7.64(dd,J=6.2,1.6Hz,2H),7.36(td,J=7.7,1.6Hz,2H),7.12–7.08(m,2H),6.94(ddq,J=9.1,3.6,2.0Hz,4H),6.88(dd,J=7.0,1.6Hz,2H),6.84–6.78(m,2H),6.50–6.31(m,8H),6.26(ddd,J=7.3,5.8,1.4Hz,2H),5.87(dd,J=7.4,6.2Hz,2H).HRMS(ESI)m / z:[M] + :1065.1736.Elemental analysis:C,49.34,H,2.64,N,7.61.

[0131] Example 3

[0132] This example provides a preparation method of compound C3, and its synthetic route is as follows:

[0133]

[0134] The preparation method of the said compound C3 includes the following steps:

[0135] 1) The preparation method of intermediate L-3 is the same as that of intermediate L-1, except that compound Ⅰ-1 is replaced by I-3, and the obtained intermediate L-3 is a dark green solid (yield 60%).

[0136] 2) The preparation method of compound C3 is the same as that of compound C1 (step 2), except that compound L-1 is replaced by L-3, and the obtained compound C3 is a dark red solid (yield 16%). 11H NMR (500 MHz, CDCl3): δ 8.69–8.61 (m, 2H), 8.40 (dd, J = 5.8, 2.3 Hz, 2H), 7.91 (dd, J = 7.6, 1.7 Hz, 2H), 7.55 (dd, J = 6.3, 1.5 Hz, 2H), 6.60–6.44 (m, 10H), 6.40 (dd, J = 7.4, 1.4 Hz, 2H), 6.31 (dd, J = 8.4, 2.3 Hz, 2H), 6.00–5.89 (m, 2H). HRMS (ESI) m / z: [M]+: 1139.1279. Elemental analysis: C, 44.47; H, 2.09; N, 9.55.

[0137] Example 4

[0138] This example provides a preparation method of compound C4, and its synthetic route is as follows:

[0139]

[0140] The preparation method of the said compound C4 includes the following steps:

[0141] 1) The preparation method of intermediate L-4 is the same as that of intermediate L-1, the difference is that compound Ⅰ-1 is replaced by I-4, and the obtained intermediate L-4 is a dark red solid (yield 58%).

[0142] 2) The preparation method of compound C4 is the same as that of compound C1 (step 2), the difference is that compound L-1 is replaced by L-4, and the obtained compound C4 is a dark red solid (yield 12%). 1 1H NMR (500 MHz, CDCl3): δ 8.37 (d, J = 6.5 Hz, 2H), 8.07 (d, J = 9.3 Hz, 2H), 7.66 (d, J = 7.6 Hz, 2H), 7.42 (t, J = 8.5 Hz, 2H), 7.19–6.97 (m, 8H), 6.55–6.34 (m, 10H), 5.94–5.85 (m, 2H). HRMS (ESI) m / z: [M]+: 1201.1503. Elemental analysis: C, 45.83, H, 2.29; N, 6.85.

[0143] Example 5

[0144] This example provides a preparation method of compound C5, and its synthetic route is as follows:

[0145]

[0146] The preparation method of the said compound C5 includes the following steps:

[0147] 1) The preparation method of intermediate L-5 is the same as that of intermediate L-1, except that compound I-1 is replaced by I-5, and the obtained intermediate L-5 is a yellow solid (yield 70%).

[0148] 2) The preparation method of compound C5 is the same as the preparation of compound C1 (step 2), except that compound L-1 is replaced by L-5, and the obtained compound C5 is a red solid (yield 20%). 1 H NMR (400 MHz, CDCl3): δ 8.11–8.00 (m, 4H), 7.62 (dd, J = 6.2, 1.5 Hz, 2H), 7.33 (td, J = 7.9, 1.5 Hz, 2H), 6.67 (d, J = 7.8 Hz, 2H), 6.57–6.38 (m, 6H), 6.34–6.24 (m, 4H), 6.20 (d, J = 1.0 Hz, 2H), 5.81 (dd, J = 7.3, 6.3 Hz, 2H), 2.46 (s, 6H). HRMS (ESI) m / z: [M]+: 1105.1168. Elemental analysis: C, 45.07; H, 2.74; N, 7.44; S, 5.66.

[0149] Example 6

[0150] This example provides a preparation method of compound C6, and its synthetic route is as follows:

[0151]

[0152] The preparation method of the said compound C6 includes the following steps:

[0153] 1) The preparation method of intermediate L-6 is the same as that of intermediate L-1, except that compound I-1 is replaced by I-6, and the obtained intermediate L-6 is a brown solid (yield 70%).

[0154] 2) The preparation method of compound C6 is the same as the preparation of compound C1 (step 2), except that compound L-1 is replaced by L-6, and the obtained compound C6 is a dark red solid (yield 10%). 11H NMR (500 MHz, CDCl3): δ 8.15 (dd, J = 7.8, 1.5 Hz, 2H), 8.02 (d, J = 6.4 Hz, 2H), 7.88 (dd, J = 6.2, 1.5 Hz, 2H), 7.66 (dd, J = 7.3, 1.6 Hz, 2H), 7.24–7.10 (m, 8H), 6.85 (d, J = 7.8 Hz, 2H), 6.55–6.38 (m, 8H), 5.89 (dd, J = 7.3, 6.4 Hz, 2H), 5.74 (ddd, J = 7.3, 5.8, 1.3 Hz, 2H). HRMS (ESI) m / z: [M]+: 1177.1151. Elemental analysis: C, 48.75; H, 2.55; N, 6.91.

[0155] Example 7

[0156] This example provides a preparation method for compound C7, and its synthetic route is as follows:

[0157]

[0158] The preparation method of the said compound C7 comprises the following steps:

[0159] 1) The preparation method of intermediate L-7 is the same as that of intermediate L-1, except that compound I-1 is replaced by I-7, and the obtained intermediate L-7 is a brown solid (yield 60%).

[0160] 2) The preparation method of compound C7 is the same as that of compound C1 (step 2), except that compound L-1 is replaced by L-7, and the obtained compound C7 is a black-red solid (yield 10%). 1 1H NMR (400 MHz, CD2Cl2) δ 8.55–8.40 (m, 4H), 8.11 (dd, J = 7.5, 1.9 Hz, 2H), 7.71 (dd, J = 6.2, 1.4 Hz, 2H), 7.59–7.53 (m, 2H), 7.25 (d, J = 7.0 Hz, 2H), 6.63–6.42 (m, 12H), 6.04–5.93 (m, 2H). HRMS (ESI) m / z: [M]+: 1203.1012. Elemental analysis: C, 43.89; H, 2.20; N, 9.33.

[0161] Device Example 1

[0162] This example provides an organic electroluminescent device, such as Figure 1As shown, it includes an anode layer 1, a hole injection layer 2, a hole transport layer 3, an electron blocking layer 4, a light-emitting layer 5, a hole blocking layer 6, an electron transport layer 7, an electron injection layer 8, and a cathode layer 9 that are sequentially arranged from bottom to top on a glass substrate;

[0163] The device structure is ITO / HAT-CN(5nm) / TAPC(30nm) / TcTa(15nm) / Compound C1:DMIC-Cz:DMIC-TRz(40nm) / ANT-BIZ(40nm) / Liq(2nm) / Al(100nm).

[0164] Among them, the anode layer 1 is made of ITO material, that is, indium tin oxide material;

[0165] The material of the hole injection layer 2 is selected as 12 - hexazaphenanthrene (HAT-CN), and the structure is as follows:

[0166]

[0167] The material of the hole transport layer 3 is selected as 4,4’-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC), and the structure is as follows:

[0168]

[0169] The material of the electron blocking layer 4 is selected as TcTa, and the structure is as follows:

[0170]

[0171] The light-emitting layer 5 is formed by co-doping a host material and a guest material. Among them, the host material is selected as a blend of compound DMIC-Cz and DMIC-TRz (mass ratio 1:1), and the guest material is selected as the compound C1 of the present invention. The doping amount of the guest material accounts for 3% of the total mass of the host material and the guest material; among them, the chemical structure of the host material compound is shown as follows:

[0172]

[0173] Both the hole blocking layer 6 and the electron transport layer 7 adopt ANT-BIZ, and the sum of the thicknesses of the two layers is 40nm, and the structure is as follows:

[0174]

[0175] The material of the electron injection layer 8 is selected as Liq;

[0176] The material of the cathode layer 9 is selected as metal Al material.

[0177] Device Example 2

[0178] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: the doping amount of the guest material C1 in the light-emitting layer 5 accounts for 6% of the total mass of the host material and the guest material.

[0179] Device Embodiment 3

[0180] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: the doping amount of the guest material C1 in the light-emitting layer 5 accounts for 9% of the total mass of the host material and the guest material.

[0181] Device Embodiment 4

[0182] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: the guest material in the light-emitting layer 5 is the compound C2 of the present invention, and the doping amount of the guest material accounts for 3% of the total mass of the host material and the guest material.

[0183] Device Embodiment 5

[0184] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: the guest material in the light-emitting layer 5 is the compound C2 of the present invention, and the doping amount of the guest material accounts for 6% of the total mass of the host material and the guest material.

[0185] Device Embodiment 6

[0186] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: the guest material in the light-emitting layer 5 is the compound C2 of the present invention, and the doping amount of the guest material accounts for 9% of the total mass of the host material and the guest material.

[0187] Device Embodiment 7

[0188] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: the guest material in the light-emitting layer 5 is the compound C3 of the present invention, and the doping amount of the guest material accounts for 3% of the total mass of the host material and the guest material.

[0189] Device Embodiment 8

[0190] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: the guest material in the light-emitting layer 5 is the compound C3 of the present invention, and the doping amount of the guest material accounts for 6% of the total mass of the host material and the guest material.

[0191] Device Embodiment 9

[0192] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: in the light-emitting layer 5, the guest material is the compound C3 of the present invention, and the doping amount of the guest material accounts for 9% of the total mass of the host material and the guest material.

[0193] Device Embodiment 10

[0194] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: in the light-emitting layer 5, the guest material is the compound C4 of the present invention, and the doping amount of the guest material accounts for 3% of the total mass of the host material and the guest material.

[0195] Device Embodiment 11

[0196] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: in the light-emitting layer 5, the guest material is the compound C4 of the present invention, and the doping amount of the guest material accounts for 6% of the total mass of the host material and the guest material.

[0197] Device Embodiment 12

[0198] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: in the light-emitting layer 5, the guest material is the compound C4 of the present invention, and the doping amount of the guest material accounts for 9% of the total mass of the host material and the guest material.

[0199] Device Embodiment 13

[0200] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: in the light-emitting layer 5, the guest material is the compound C5 of the present invention, and the doping amount of the guest material accounts for 3% of the total mass of the host material and the guest material.

[0201] Device Embodiment 14

[0202] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: in the light-emitting layer 5, the guest material is the compound C5 of the present invention, and the doping amount of the guest material accounts for 6% of the total mass of the host material and the guest material.

[0203] Device Embodiment 15

[0204] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: in the light-emitting layer 5, the guest material is the compound C5 of the present invention, and the doping amount of the guest material accounts for 9% of the total mass of the host material and the guest material.

[0205] Device Embodiment 16

[0206] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: in the light-emitting layer 5, the guest material is the compound C6 of the present invention, and the doping amount of the guest material accounts for 3% of the total mass of the host material and the guest material.

[0207] Device Embodiment 17

[0208] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: in the light-emitting layer 5, the guest material is the compound C6 of the present invention, and the doping amount of the guest material accounts for 6% of the total mass of the host material and the guest material.

[0209] Device Embodiment 18

[0210] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: in the light-emitting layer 5, the guest material is the compound C6 of the present invention, and the doping amount of the guest material accounts for 9% of the total mass of the host material and the guest material.

[0211] Device Embodiment 19

[0212] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: in the light-emitting layer 5, the guest material is the compound C7 of the present invention, and the doping amount of the guest material accounts for 3% of the total mass of the host material and the guest material.

[0213] Device Embodiment 20

[0214] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: in the light-emitting layer 5, the guest material is the compound C7 of the present invention, and the doping amount of the guest material accounts for 6% of the total mass of the host material and the guest material.

[0215] Device Embodiment 21

[0216] This embodiment provides an organic electroluminescent device, which is different from the organic electroluminescent device provided in Device Embodiment 1 in that: in the light-emitting layer 5, the guest material is the compound C7 of the present invention, and the doping amount of the guest material accounts for 9% of the total mass of the host material and the guest material.

[0217] Test Example 1

[0218] The provided organic light-emitting devices in Device Examples 1-3 were tested. The current-brightness-voltage characteristics of the devices were measured by a Keithley source measurement system (Keithley 2400 Sourcemeter, Keithley 2000 Currentmeter) with a calibrated silicon photodiode. All tests were completed in air at room temperature. The test results are shown in Table 1 and Figures 2 - 5 。

[0219] Table 1 Test Results of Device Performance

[0220]

[0221] [a]: Maximum brightness; [b]: Current efficiency; [c]: Power efficiency; [d]: External quantum efficiency; [e]: CIE coordinates @1000 cd·m -2 。

[0222] For the deep red light-emitting OLED device prepared with Compound C1 as the guest material in the present invention, the maximum emission brightness exceeds 50000 cd m -2 , the maximum current efficiency is 10.5 cd A -1 , the maximum power is 11.5 lm W -1 , and the maximum external quantum efficiency can still reach as high as 21.8% in the deep red light band of 668 nm.

[0223] Test Example 2

[0224] The provided organic light-emitting devices in Device Examples 4-6 were tested. The current-brightness-voltage characteristics of the devices were measured by a Keithley source measurement system (Keithley 2400 Sourcemeter, Keithley 2000 Currentmeter) with a calibrated silicon photodiode. All tests were completed in the atmosphere at room temperature. The test results are shown in Table 2 and Figures 6 - 9 。

[0225] Table 2 Test Results of Device Performance

[0226]

[0227] [a]: Maximum brightness; [b]: Current efficiency; [c]: Power efficiency; [d]: External quantum efficiency; [e]: CIE coordinates @1000 cd·m -2 。

[0228] For the deep red to near-infrared OLED device prepared with Compound C2 as the guest material in the present invention, the maximum emission brightness can reach 32188 cd m -2 , the maximum current efficiency is 6.6 cd A-1 , the maximum power efficiency is 7.0 lm / W -1 , at a doping concentration of 9 wt.%, the maximum external quantum efficiency of the device can still reach 16.9% in the deep red light range of 692 nm.

[0229] Test Example 3

[0230] The organic light-emitting devices provided in Device Examples 7-9 were tested. The current-luminance-voltage characteristics of the devices were measured by a Keithley source measurement system (Keithley 2400 Sourcemeter, Keithley 2000 Currentmeter) with a calibrated silicon photodiode. All tests were completed in room-temperature atmosphere. The test results are shown in Table 3 and Figures 10 - 13 .

[0231] Table 3 Test Results of Device Performance

[0232]

[0233] [a]: Maximum luminance; [b]: Current efficiency; [c]: Power efficiency; [d]: External quantum efficiency; [e]: CIE coordinates @ 1000 cd·m -2 .

[0234] The deep red light OLED device prepared by using Compound C3 as the guest material in the present invention has a maximum emission luminance of 26125 cd / m at a doping concentration of 3 wt.%. -2 , the maximum current efficiency is 4.1 cd / A -1 , the maximum power efficiency is 4.4 lm / W -1 , the maximum external quantum efficiency of the device is 13.7%. When the doping ratio increases from 3 wt.% to 9 wt.%, the maximum emission wavelength redshifts from 688 nm to 695 nm, and a relatively high maximum external quantum efficiency can still be achieved in the deep red to near-infrared light range.

[0235] Test Example 4

[0236] The organic light-emitting devices provided in Device Examples 10-12 were tested. The current-luminance-voltage characteristics of the devices were measured by a Keithley source measurement system (Keithley 2400 Sourcemeter, Keithley 2000 Currentmeter) with a calibrated silicon photodiode. All tests were completed in room-temperature atmosphere. The test results are shown in Table 4 and Figures 14 - 17 .

[0237] Table 4 Test Results of Device Performance

[0238]

[0239] [a]: Maximum brightness; [b]: Current efficiency; [c]: Power efficiency; [d]: External quantum efficiency; [e]: CIE coordinates @ 1000 cd·m -2 。

[0240] The deep red to near-infrared OLED device prepared by using compound C4 as the guest material in the present invention has a maximum emission brightness of 16285 cd m at a doping concentration of 3%, -2 a maximum current efficiency of 2.7 cd A -1 a maximum power efficiency of 2.9 lm W -1 a maximum external quantum efficiency of 9.2%. When the doping ratio increases from 3 wt.% to 9 wt.%, the maximum emission wavelength redshifts from deep red light at 687 nm to near-infrared light at 703 nm.

[0241] Test Example 5

[0242] The organic electroluminescent devices provided in Device Examples 13 - 15 were tested. The current-brightness-voltage characteristics of the devices were measured by a Keithley source measurement system (Keithley 2400 Sourcemeter, Keithley 2000 Currentmeter) with a calibrated silicon photodiode. All tests were completed at room temperature in the atmosphere. The test results are shown in Table 5 and Figures 18 - 21 。

[0243] Table 5 Test Results of Device Performance

[0244]

[0245] [a]: Maximum brightness; [b]: Current efficiency; [c]: Power efficiency; [d]: External quantum efficiency; [e]: CIE coordinates @ 1000 cd·m -2 。

[0246] The deep red OLED device prepared by using compound C5 as the guest material in the present invention has a maximum emission brightness as high as 30052 cd m -2 and a maximum external quantum efficiency as high as 21.0% in the deep red light band at 670 nm. When the doping ratio increases from 3 wt.% to 9 wt.%, under the deep red emission at 684 nm, the maximum external quantum efficiency can still reach 17.5%.

[0247] Test Example 6

[0248] The provided organic electroluminescent devices in Device Examples 16 - 18 were tested. The current - luminance - voltage characteristics of the devices were measured by a Keithley source measurement system (Keithley 2400 Sourcemeter, Keithley 2000 Currentmeter) with a calibrated silicon photodiode. All tests were completed in room - temperature atmosphere. The test results are shown in Table 6 and Figures 22 - 25 .

[0249] Table 6 Test Results of Device Performance

[0250]

[0251] [a]: Maximum luminance; [b]: Current efficiency; [c]: Power efficiency; [d]: External quantum efficiency; [e]: CIE coordinates @1000 cd·m -2 .

[0252] The deep - red to near - infrared red OLED device prepared by the present invention using compound C6 as the guest material has a maximum emission luminance exceeding 10000 cd m in the deep - infrared light band of 692 nm -2 , and at a doping ratio of 9 wt.%, a high - efficiency near - infrared emission with a maximum external quantum efficiency of up to 15.4% at 700 nm is achieved.

[0253] Test Example 7

[0254] The provided organic electroluminescent devices in Device Examples 19 - 21 were tested. The current - luminance - voltage characteristics of the devices were measured by a Keithley source measurement system (Keithley 2400 Sourcemeter, Keithley 2000 Currentmeter) with a calibrated silicon photodiode. All tests were completed in room - temperature atmosphere. The test results are shown in Table 7 and Figures 26 - 29 .

[0255] Table 7 Test Results of Device Performance

[0256]

[0257] [a]: Maximum luminance; [b]: Current efficiency; [c]: Power efficiency; [d]: External quantum efficiency; [e]: CIE coordinates @1000 cd·m -2 .

[0258] The near - infrared light OLED device prepared by the present invention using compound C7 as the guest material has a maximum emission luminance of 4487 cd m -2 , a maximum current efficiency of 0.6 cd A -1 , and a maximum power efficiency of 0.4 lm W-1 , the maximum external quantum efficiency is 3.0%, and 1000 cd m -2 The roll-off is also small, and the maximum emission wavelength is near-infrared emission at 706 - 725 nm.

[0259] Test Example 8

[0260] The organic light-emitting device provided in Device Example 1 was tested. The current-brightness-voltage characteristics of the device were measured by a Keithley source measurement system (Keithley 2400 Sourcemeter, Keithley 2000 Currentmeter) with a calibrated silicon photodiode. All tests were completed in room-temperature atmosphere. The test results are shown in Table 8 and Figure 30 .

[0261] Table 8 Test Results of Device Performance

[0262]

[0263] [a]: Initial brightness; [b]: Constant current; [c]: Ambient temperature; [d]: Emission time at 85% relative brightness.

[0264] The present invention is a deep red light OLED device prepared with compound C1 as the guest material, using a doping ratio of 3%, DMIC-Cz and DMIC-TRz as the co-hosts. The test conditions are an ambient temperature of 21.8 °C and a constant current of 0.40 mA, and the initial brightness is 1000 cd m -2 , and it can be seen from the test results that the LT of this device 85 is 334 h, and it can maintain relatively stable emission even at a higher brightness, indicating that the deep red light device based on molecule C1 has good device stability.

[0265] In summary, the present invention cleverly uses phenoxazine derivatives as bridging bidentate ligands, effectively shortening the distance between platinum-platinum metals in the molecule, thereby inducing a strong Pt-Pt interaction, generating an MMLCT (metal-metal to ligand charge transfer transition) excited state, and promoting the red shift of luminescence. In addition, by enhancing the electron-withdrawing ability of the C^N cyclometalated ligand or increasing the degree of π conjugation, the light color is further red-shifted. Due to the strong metal interaction, a series of binuclear platinum phosphorescent complexes with deep red to near-infrared luminescence are obtained. The OLED device prepared by vacuum evaporation method achieves high-efficiency emission (21.8%) in the deep red to near-infrared light band range (680 nm - 700 nm). At the same time, due to the suppression of non-radiative decay by the rigid skeleton of the complex and the relatively fast radiative decay rate under the heavy metal atom effect of the metal, the device exhibits low roll-off and a long device lifetime.

[0266] The dual-core platinum metal complex provided by the present invention, taking compound C1 as an example, shows a high quantum yield of more than 60% in the doped film state. It can be seen from the transient spectrum that it has a short decay lifetime. The decay lifetime of this series of molecules is between 1 - 2 μs. According to the TGA thermal stability analysis, it can still maintain 95% of the molecular mass at 412 °C, indicating good thermal stability. From the device results of compound C1, it can be seen that for the device based on this molecule as the guest luminescent material, it can still achieve a high-efficiency emission of 21.8% in the deep red light band of 668 nm, and the maximum brightness exceeds 50000 cd·m -2 , and it can also reach a relatively high device efficiency of 19.4% at 1000 cd·m -2 , and the device roll-off is only 11%.

[0267] Obviously, the above embodiments are only examples given for clear illustration and are not limitations on the implementation manners. For those of ordinary skill in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to enumerate all implementation manners here. And the obvious changes or modifications derived therefrom are still within the protection scope of the present invention.

Claims

1. A binuclear metal platinum complex, characterized in that, It has the structure shown below: Among them, M is platinum; ring A and ring B are each independently selected from C6-C 18 aryl, C4-C 17 heteroaryl, ring A and ring B are connected by a single bond, and ring A and ring B coordinate with the metal M center in the form of a monovalent bidentate ligand; Ring A and ring B are optionally substituted by one or more substituents R A or R B ; each R A , R B is independently selected from hydrogen, deuterium, halogen, halo-C1-C 40 alkyl, C1-C 40 alkyl; R 1 -R 7 Same or different, each independently selected from hydrogen and deuterium.

2. The dinuclear metal platinum complex according to claim 1, characterized in that, R A 、R B are each independently selected from F, Cl, Br, I, C1-C 20 alkyl, halo-C1-C 20 alkyl.

3. The binuclear metal platinum complex according to claim 1, wherein In Formula I has the structure shown below:

4. The binuclear metal platinum complex according to claim 1, characterized in that, It has the structure shown in Formula II below: Wherein, M is platinum metal; R 8 -R 10 、R 13 -R 15 Each independently selected from hydrogen, deuterium, halogen, halo C1-C 40 alkyl, C1-C 40 alkyl; R 1 -R 7 identical or different, each independently selected from hydrogen, deuterium; X, X1 - X3 are each independently selected from N or CR, and each R is the same or different and is independently selected from hydrogen.

5. The binuclear platinum metal complex according to claim 4, wherein X1 is selected from N, X is selected from CR, X2 is selected from CR, X3 is selected from CR, or X is selected from N, X1 is selected from N, X2 is selected from CR, X3 is selected from CR, or X2 is selected from N, X3 is selected from N, X is selected from CR, X1 is selected from CR, each R is the same or different and is independently selected from hydrogen.

6. The binuclear metal platinum complex according to claim 4, wherein R 1 -R 7 identical or different and each independently selected from hydrogen; R 8 -R 10 、R 13 -R 15 are the same or different and are each independently selected from hydrogen, halogen, C1-C 10 fluoroalkyl; X1 is selected from N, X is selected from CR, X2 is selected from CR, X3 is selected from CR, or X is selected from N, X1 is selected from N, X2 is selected from CR, X3 is selected from CR, or X2 is selected from N, X3 is selected from N, X is selected from CR, X1 is selected from CR, and each R is the same or different and is independently selected from hydrogen.

7. The dinuclear metal platinum complex according to claim 6, characterized in that, The C1-C 10 The fluoroalkyl group is selected from trifluoromethyl, trifluoroethyl, and pentafluoroethyl.

8. The dinuclear metal platinum complex according to any one of claims 1, 4-7, characterized in that The halogen is selected from fluorine, chlorine, bromine, and iodine.

9. A binuclear metal platinum complex, characterized in that, It has the structure shown in Formula III below: Wherein, M is platinum metal; R 1 -R 7 identical or different and each independently selected from hydrogen and deuterium; R 8 -R 9 、R 12 -R 15 are the same or different and each independently selected from hydrogen, deuterium, halogen, halo-C1-C 40 alkyl, C1-C 40 alkyl, or R 8 -R 9 adjacent to each other are connected to form a C6 aryl group.

10. The dinuclear platinum metal complex according to claim 9, wherein R 1 -R 7 selected from hydrogen; R 8 -R 9 、R 12 -R 15 are the same or different and each independently selected from hydrogen, halogen, C1-C 10 alkyl, or two adjacent ones of R 8 -R 9 are connected to each other to form a C6 aryl group.

11. The binuclear metal platinum complex according to claim 9, wherein R 1 -R 7 selected from hydrogen; R 12 -R 15 selected from hydrogen; R 8 -R 9 Identical or different, each independently selected from hydrogen, C1-C 10 alkyl, or R 8 -R 9 adjacent ones of which are connected to each other to form a C6 aryl group.

12. The dinuclear metal platinum complex according to claim 9 or 10, characterized in that, The halogen is selected from fluorine, chlorine, bromine, and iodine.

13. The binuclear metal platinum complex according to claim 10, wherein The C1-C 10 alkyl group is selected from methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, and tert-butyl.

14. A binuclear metal platinum complex, characterized in that, The binuclear platinum metal complex has the structure shown below:

15. An organic electroluminescent device, characterized in that, The organic electroluminescent device includes a first electrode, a second electrode, and a light-emitting layer located between the first electrode and the second electrode, and the light-emitting layer includes any one or a combination of at least two of the binuclear platinum metal complexes described in any one of claims 1 - 14.

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