Method of manufacturing semiconductor device and manufacturing chamber and flow guide plate applied thereto

Abstract

A method of manufacturing a semiconductor device includes loading one or more semiconductor wafers into a plurality of stations provided in a process chamber, applying a process to the semiconductor wafers, wherein the process deposits a material on the one or more semiconductor wafers, and cleaning the process chamber. Suitably, cleaning the process chamber includes flowing a cleaning gas to the process chamber, to a flow guide disposed in the process chamber, the flow guide having a first surface on which the flowing cleaning gas impinges, the first surface directing a first portion of the flowing cleaning gas to impinge thereon in a first trajectory toward a first end of the process chamber and directing a second portion of the flowing cleaning gas to impinge thereon in a second trajectory toward a second end of the process chamber, the second end being opposite the first end.

Description

TECHNICAL FIELD

[0001] The present invention relates to a method of manufacturing semiconductor devices and a process chamber and a purge gas baffle plate applied thereto. BACKGROUND

[0002] The following relates to semiconductor technology, and more particularly to methods and apparatuses for manufacturing of semiconductor devices and / or processing of semiconductor wafers; to purging of process chambers used to deposit silicon oxycarbide (SiCO) material; and related technology. SUMMARY

[0003] A method of manufacturing semiconductor devices is provided. The method includes loading one or more semiconductor wafers into a plurality of stations provided in a process chamber; applying a process to the semiconductor wafers, wherein material is deposited on the one or more semiconductor wafers in the process chamber; and purging the process chamber. Suitably, purging the process chamber includes flowing a purge gas toward the process chamber and toward a baffle plate disposed in the process chamber, the baffle plate having a first surface on which the flowing purge gas impinges, the first surface directing a first portion of the flowing purge gas impinging thereon toward a first end of the process chamber in a first trajectory and directing a second portion of the flowing purge gas impinging thereon toward a second end of the process chamber in a second trajectory, the second end being opposite the first end.

[0004] A process chamber for depositing material on one or more semiconductor wafers is provided. The process chamber includes a plurality of mounting structures, each mounting structure being arranged to selectively receive a semiconductor wafer on a top portion thereof; one or more showerheads to introduce a process gas therefrom into the process chamber to form a thin film of material on one or more semiconductor wafers placed on the plurality of mounting structures; a port to flow a purge gas from the process chamber therefrom; and a baffle plate having a central hub, a periphery, and a first surface extending between the central hub and the periphery, the first surface facing the port, and along a bisecting cross-section of the baffle plate, the first surface is defined by at least two arcs having an inflection point therebetween, the at least two arcs including a first arc that is concave in a first direction between the central hub and the inflection point, and a second arc that is concave in a second direction between the inflection point and the periphery, the second direction being opposite the first direction.

[0005] This application provides a cleaning gas deflector that deflects cleaning gas flowing into a semiconductor process chamber, wherein multiple mounting structures are accommodated on which one or more semiconductor wafers are selectively placed to form layers and materials. The cleaning gas deflector includes: a central hub through which a central vertical axis extends; a periphery; and a first surface extending between the central hub and the periphery, wherein the first surface has: (i) one or more recesses therein, each recess being at least partially defined by an upwardly concave first parabolic arc, and (ii) one or more ridges therein, each ridge being at least partially defined by a downwardly concave second parabolic arc. Attached Figure Description

[0006] The following detailed description, accompanied by the accompanying drawings, will provide the best understanding of the nature of this disclosure. It should be noted that, according to industry standard practice, the features are not drawn to scale. In fact, the dimensions of the features may be arbitrarily increased or decreased for clarity of explanation.

[0007] FIG. 1A and 1B The diagrams respectively illustrate partially exploded side and perspective views of a multi-station process chamber used for performing atomic layer deposition (ALD) or other similar material deposition processes on a semiconductor wafer or substrate according to some embodiments of this disclosure, wherein certain elements and / or surface portions are shown as transparent to reveal their internal structure and / or surface.

[0008] FIG. 2 The diagram illustrates the presentation. FIG. 1A and FIG. 1B A perspective view of the upper or top or part of the ceiling of the process chamber shown.

[0009] FIG. 3 The illustration shows a perspective view of a cleaning gas guide plate according to some embodiments of this disclosure.

[0010] FIG. 4A and 4B The diagram illustrates a partial perspective view, which presents a view including the main axis ( FIG. 4A )of FIG. 1A and 1B The lower or bottom end or portion of the process chamber shown, and the spindle ( FIG. 4B () perspective isolated view.

[0011] FIG. 5 The diagram shows along FIG. 3 The cross-sectional view of the cleaning gas guide plate shown is taken from the mid-section line 5-5.

[0012] FIG. 6A to FIG. 6D It is a diagram showing the presentation FIG. 3various perspective views of the flow guide shown in FIG. 1, with respective cross-sectional lines taken along respective cross-sectional planes removed therefrom. More specifically, FIG. 6A a perspective view of a portion of the flow guide taken along cross-sectional line A-A, FIG. 6B a perspective view of a portion of the flow guide taken along cross-sectional line B-B, FIG. 6C a perspective view of a portion of the flow guide taken along cross-sectional line C-C, and FIG. 6D a perspective view of a portion of the flow guide taken along cross-sectional line D-D.

[0013] FIG. 7A and 7B a gas flow simulation showing a cleaning gas flow during cleaning of a process chamber having a flat index plate (100) and a flow guide plate (200). FIG. 7A FIG. 7B is a flow diagram showing a semiconductor process method according to some embodiments of the present disclosure, for example, utilizing a process chamber having a flow guide plate (200) installed therein.

[0014] FIG. 8 FIG. 3 is a flow diagram showing a semiconductor process method according to some embodiments of the present disclosure, for example, utilizing a process chamber having a flow guide plate (200) installed therein. FIG. 1A FIG. 1B

[0015] FIG. 9 is a flow diagram showing a semiconductor process method according to some embodiments of the present disclosure, for example, utilizing a process chamber having a flow guide plate (200) installed therein. FIG. 3 FIG. 1A FIG. 1B DETAILED DESCRIPTION

[0016] The following disclosure provides many different embodiments, or examples, for implementing different features of the application. Specific examples of components and configurations are described below to simplify the present disclosure. These are, of course, merely examples and are in no way limiting of the scope of the present application. For example, in the following description, a first feature is formed over a second feature in a number of different embodiments. It is to be understood that where the first feature is formed over the second feature, the first feature can be formed directly over the second feature, or additional features can be formed between the first and second features such that the first and second features are not directly in contact. Additionally, the present disclosure can repeat reference numerals and / or letters in various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and / or configurations discussed.

[0017] ​​​​​​​Furthermore, spatially relative terms, such as "left", "right", "side", "back", "rear", "behind", "front", "underneath", "below", "beneath", "lower", "above", "upper", and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. Spatially relative terms can be intended to encompass different orientations of the elements in use or operation in addition to the orientation depicted in the figures. The devices can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0018] Generally, semiconductor devices, e.g., such as metal-oxide-semiconductor field-effect transistor (MOS-FET) devices, fin field-effect transistor (FinFET) devices, gate-all-around field-effect transistor (GAA-FET) devices, integrated circuits (ICs), etc., are fabricated and / or manufactured on semiconductor wafers and / or suitable substrates in a semiconductor manufacturing factory, often referred to as a FAB or foundry. Typically, a number of process steps are applied to the semiconductor wafer or substrate to produce the desired semiconductor device and / or a large number of semiconductor devices on the wafer or suitable substrate. For example, during the production of electronic circuits and / or semiconductor devices on a semiconductor wafer, semiconductor manufacturing can be a number of successive steps of lithography, mechanical, and / or chemical process steps, e.g., such as surface passivation, thermal oxidation, planar diffusion, junction isolation, etc. Thus, a FAB clean room or other similar space where manufacturing occurs typically includes a number of individual machines and / or tools for semiconductor device production, e.g., but not limited to, such as steppers and / or scanners for lithography and tools for material deposition, etching, cleaning, doping, testing, inspection, etc., and ports or the like for loading semiconductor wafers for temporary staging and / or storage. During the manufacturing process, semiconductor wafers are typically transported and / or otherwise transferred between tools and / or from various tools and / or equipment with robotic arms or the like, e.g., an equipment front end module (EFEM).

[0019] Semiconductor manufacturing processes typically involve or include process steps in which various layers and / or films of material are built up one on top of another and optionally suitably patterned. A number of different material deposition methods and / or processes can be used to produce layers and / or films of material suitable for use in semiconductor manufacturing, such as, for example, chemical vapor deposition (CVD), atomic layer deposition (ALD), molecular layer deposition (MLD), etc. One or more material deposition process steps are typically carried out in a suitable process chamber in semiconductor manufacturing.

[0020] For example, during ALD, layers or films of material can be deposited or grown on a substrate or semiconductor wafer within a process chamber by alternately exposing its surface to the introduction of one or more precursors or reactants into the process chamber. Suitably, the different precursors or reagents are not introduced or present at the same time, but rather they are introduced in successive steps. In each of these steps, for example, the precursor atoms or molecules can react with the surface in a self-limiting manner, so that the reaction terminates once all of the reactive sites on the surface are filled or consumed. The amount of material deposited on the surface after a single exposure therefore depends on the nature of the precursor and surface interaction. Advantageously, by varying the number of cycles, it is possible to grow material with high precision and uniformity over complex and / or large substrates and / or semiconductor wafers. As a specific example, various stoichiometric proportions of silicon oxycarbide (SiCO) deposition can be accomplished by ALD or other deposition techniques, and is an important part of many IC manufacturing workflows.

[0021] According to some suitable embodiments of the present disclosure, a process chamber having multiple stations is suitable for carrying out ALD or other similar material deposition processes of SiCO or other materials, so that multiple semiconductor wafers and / or suitable substrates can be processed simultaneously within the multi-station process chamber. One advantage of having multiple stations in a process chamber is that the overall manufacturing process through-put can be increased, for example, as compared to a process chamber in which only a single semiconductor wafer is processed at a time by a single station. In suitable embodiments of the present disclosure, the process chamber includes four stations to process up to four semiconductor wafers and / or suitable substrates simultaneously.

[0022] Accordingly, one or more repeated material deposition process steps, e.g., ALD within a process chamber, over time can result in the process chamber becoming soiled. That is, unwanted particles, debris, and / or contaminants can be generated, introduced, accumulated, and / or retained within the process chamber, e.g., on various interior surfaces and / or components within the process chamber. In the specific example of SiCO deposition processes, carbon or carbon-based particles and / or contaminants are typically generated. The presence of unwanted particles and / or contaminants within the process chamber can implicitly interfere with subsequent material deposition and / or layer or film formation, e.g., when the unwanted particles and / or contaminants land on or otherwise interfere with the surface of a semiconductor wafer being processed within the process chamber or a layer or film thereon, resulting in damage and / or defects in the semiconductor wafer and / or semiconductor devices being manufactured. Accordingly, in some embodiments of the present disclosure, a cleaning process step can be periodically or intermittently performed within the process chamber, e.g., between material deposition process steps within the process chamber. Advantageously, the cleaning process chamber of the present disclosure removes, eliminates, or otherwise reduces unwanted particles and / or contaminants within the process chamber, or otherwise neutralizes or inhibits their interference with material deposition and / or layer or film formation on a semiconductor wafer or substrate. Accordingly, damage and / or defects in the semiconductor wafer and / or semiconductor devices accumulated thereon can be avoided, limited, or reduced. In some embodiments of the present disclosure, the cleaning process can include flowing a cleaning gas, e.g., into and / or through the process chamber. In some embodiments suitable for cleaning SiCO deposition chambers, the cleaning gas can include (NF3).

[0023] However, the frequency of cleaning and / or the time taken for each cleaning through the process chamber can implicitly negatively impact overall semiconductor manufacturing throughput. Accordingly, in some suitable embodiments of the present disclosure, a process chamber, such as a multi-station ALD process chamber, is equipped and / or outfitted with a cleaning gas flow deflector to improve the efficiency and / or effectiveness of the cleaning process. Advantageously, in some suitable embodiments, the deflector of the present disclosure allows for effective cleaning of the process chamber to be performed at a lower frequency and / or during a shorter period of time, thereby increasing overall manufacturing throughput through the process chamber, for example, as compared to when such a deflector (or flat lid plate) is not utilized. At least in part, this advantage is achieved and / or otherwise realized by the deflector effectively and / or efficiently directing cleaning gas in a direction and / or along a trajectory toward a plurality of different regions within the process chamber. For example, in some suitable embodiments, the deflector is formed of a surface having a plurality of different areas or regions, where some deflect or direct the flow of cleaning gas impinging thereon to return or otherwise travel along a trajectory toward a first end of the process chamber (e.g., the end of the process chamber from which the cleaning gas is introduced, such as the top end of the process chamber), while others deflect or direct the flow of cleaning gas impinging thereon to return or otherwise travel along a trajectory toward a second end of the process chamber (e.g., the end opposite the location from which the cleaning gas is introduced, such as the bottom end of the process chamber).

[0024] According to some embodiments of the present disclosure, FIG. 1A and FIG. 1B A multi-station process chamber 100 is shown, for example, as being suitable for use in connection with ALD and / or other similar material deposition processing to form layers and / or films of material on semiconductor wafers or suitable substrates in semiconductor manufacturing. In exemplary embodiments, the layers or films of material formed on the semiconductor wafers or substrates can include a selected stoichiometry of silicon oxycarbide (SiCO), although deposition of silicon-based dielectric materials or the like can alternatively be considered. The process chamber 100 as shown includes an upper or top end or portion 110 and a lower or bottom end or portion 120. As shown in exemplary embodiments, the multi-station process chamber 100 includes four stations 130, each of which is arranged and / or otherwise configured to process a semiconductor wafer or suitable substrate placed, loaded and / or otherwise positioned therein. In some alternative embodiments, more or less than four stations 130 can in fact be provided in the multi-station process chamber 100.

[0025] In practice, each station 130 provided, disposed, and / or positioned within a lower or bottom end or portion 120 of the process chamber 100, for example, can include a pedestal, platform, or other mounting structure 122 upon which a semiconductor wafer or suitable substrate is selectively loaded, placed, secured, and / or held. In some suitable embodiments, the mounting structure 122 can include a chuck, such as a vacuum or electrostatic chuck, for example, or other similar clamp that selectively secures a semiconductor wafer or suitable substrate placed thereon to it so as to selectively hold the semiconductor wafer or suitable substrate in a substantially fixed position to the mounting structure 122.

[0026] In some suitable embodiments, each mounting structure 122 and / or station 130 is further provided, equipped, and / or otherwise in thermal communication with a heater or heating element. The heater or heating element selectively provides and / or applies an appropriate amount of heat to the semiconductor wafer or suitable substrate loaded on top of the mounting structure 122 so as to raise and / or maintain it at the same temperature as the appropriate material deposition process, such as an ALD being performed in the process chamber 100, and / or desired operating temperature. In some suitable embodiments, for example, the operating temperature can be in a range from about room temperature or about 20 °C to about 560 °C.

[0027] In some suitable embodiments, each individual heater or heating element associated with each individual mounting structure 122 and / or station 130 can be operated and / or controlled individually and / or independently. Thus, for example, regardless of the reason, the corresponding heater or heating element of those stations 130 that are not being used (i.e., those stations 130 that do not have a semiconductor wafer or suitable substrate loaded in them) can remain unused or de-energized during the performance of the ALD or other material deposition process in the process chamber 100.

[0028] In some suitable alternative embodiments, a single heater or heating element can be provided for more than one station 130 and / or mounting structure 122. That is, as opposed to each mounting structure 122 and / or station 130 having its own heater or heating element, a single heater or heating element can provide or apply the required heat to multiple mounting structures 122 or multiple stations 130.

[0029] In some suitable embodiments, as shown, each mounting structure 122 can be disposed and / or otherwise positioned in a corresponding well or recess 124 formed in the bottom or lower end or portion 120 of the process chamber 100.

[0030] In practice, each station 130 within the process chamber 100, provided, arranged and / or positioned, for example, in the upper or top end or portion 110 of the process chamber 100, can include a showerhead 112 or other similar inlet port. In some suitable embodiments, each showerhead 112 is aligned with (e.g., at and / or above) the respective mounting structure 122 of the station 130. Depending on the ALD or other similar material deposition process being performed in the process chamber 100, suitable precursors and / or reactants, for example, in the gas phase, are selectively flowed and / or introduced into the process chamber 100 through the respective showerhead 112 or other similar inlet port. In the case of SiCO deposition, for example, the reactants include silicon, carbon and oxygen precursors delivered in relative proportions, i.e., in combination with other SiCO deposition process parameters such as wafer temperature and gas flow rates, to provide the desired stoichiometry of SiCO deposition.

[0031] In some suitable embodiments, each individual showerhead 112 (and / or the flow or introduction of precursors or reagents therefrom) associated with each individual mounting structure 122 and / or station 130 can be separately and / or independently operated and / or controlled, for example, to deposit SiCO to the desired stoichiometry. Thus, for example, regardless of the reason, the respective showerheads 112 (and / or the flow or introduction of precursors or reagents therefrom) of those stations 130 that are not used, i.e., those stations 130 in which no semiconductor wafer or suitable substrate is loaded, can remain unused (i.e., no precursors or reagents flow therefrom or are introduced thereinto) during the performance of the ALD or other material deposition process in the process chamber 100.

[0032] In some suitable alternative embodiments, a single showerhead 112 can be provided in more than one station 130 and / or mounting structure 122. That is, rather than having its own showerhead 112 with respect to each mounting structure 122 and / or station 130, a single showerhead 112 can selectively provide precursors or reagents to multiple stations 130.

[0033] In some suitable embodiments, as shown, each showerhead 112 can be arranged and / or otherwise located in or on the top wall or ceiling 114 of the upper or top end or portion 110 of the process chamber 100.

[0034] Suitably, a vacuum system is provided to selectively pump, pull, or pull out gases through and / or from the process chamber 100 and / or to maintain a desired atmospheric pressure within the process chamber 100. For example, during applications in which ALD or other similar material deposition steps are performed in the process chamber 100, the vacuum system can be operated and / or controlled to help form or otherwise establish a desired flow of a precursor or reagent introduced into the process chamber 100 by the respective showerhead 112 so that a surface of a semiconductor wafer or other suitable substrate loaded into each respective station 130 is suitably exposed to the precursor or reagent. In some suitable embodiments, the vacuum system can be further selectively used, operated, and / or controlled to remove or purge gases from the process chamber 100 after, for example, an ALD or other similar material deposition step or process is performed in the process chamber 100.

[0035] In some suitable embodiments, the vacuum system is operatively coupled to and / or in fluid communication with each of the stations 130 in the process chamber 100, for example, in, at, or near the respective trap or recess 124 including the respective mounting structure 122. In this manner, the vacuum system can act and / or help pull, pull out, and / or otherwise cause a flow of gas (e.g., a precursor or reagent introduced from the respective showerhead 112) over a semiconductor wafer or substrate held on the respective mounting structure 122, down through the trap or recess 124, and out of the process chamber 100.

[0036] In some suitable embodiments, the vacuum system can selectively engage each individual station 130 separately (e.g., by respective individual and / or independently operable and / or controllable connections to each individual station 130) and / or each individual station 130 can be provided with its own individual vacuum system. Thus, for whatever reason, for example, fewer than all of the given stations 130 loaded with semiconductor wafers or substrates, then the vacuum system for those unused stations 130 (i.e., those stations 130 in which no semiconductor wafer or suitable substrate is loaded) can remain uninvolved in performing ALD or other material deposition processes in the process chamber 100. In some suitable alternative embodiments, a single vacuum system can be provided for more than one station 130 and / or in operative fluid communication. That is, rather than each station 130 having its own vacuum system or independently operated and / or controlled connection to a common vacuum system, a single vacuum system can be in operative fluid communication with and / or selectively co-involved with multiple stations 130.

[0037] In some suitable embodiments, as in FIG. 2The example shown illustrates the outlet face of nozzle 112, where the cleaning gas inlet port 116 is separate from the nozzle 112 supplied to the process chamber 100. Gas inlet port 116 is used to allow cleaning gas to enter the process chamber during cleaning, hence it is referred to here as inlet port 116. Inlet port 116 corresponds to the outlet of the cleaning gas feed line. (See example...) FIG. 1A and 1B As shown, stations 130 are arranged symmetrically in a substantially square 2×2 array or configuration within process chamber 100. Suitably, inlet ports 116 are located within or above the top wall or ceiling 114 of the upper or top portion 110 of process chamber 100, for example, centered between pairs of nozzles 112 for the respective stations 130. More generally, if there are N stations 130, they are suitably arranged in a configuration with N-fold rotational symmetry, for example, an illustrative arrangement of four stations 130 at 90-degree intervals (quadruple rotational symmetry), an alternative arrangement of five stations at 72-degree intervals (quintuple symmetry); or an alternative arrangement of six stations at 60-degree intervals (six-fold symmetry); or an alternative arrangement of three stations at 120-degree intervals (triple symmetry); and so on.

[0038] As described above, in some suitable embodiments of this disclosure, the cleaning process steps can be performed in the process chamber 100, for example, periodically or intermittently between ALD and / or other similar material deposition process steps. In some embodiments of this disclosure, the cleaning process may include circulating a cleaning gas, for example, flowing into and / or through the process chamber 100. In some suitable embodiments of the process chamber for SiCO deposition, the cleaning gas may include nitrogen trifluoride (NF3) as a non-limiting illustrative example. Suitably, the cleaning gas may be introduced and / or flow into the process chamber 100 from inlet port 116.

[0039] FIG. 3 This indicates a cleaning gas guide vane 200. In some suitable embodiments, for example, such as in... FIG. 4A and FIG. 4B As shown, the process chamber includes a spindle 125 (in FIG. 4B (Shown separately) It includes an end effector 126 for lifting or otherwise manipulating the wafer 122, and a central indexing plate 128 for the spindle. The indexing plate 128 is also shown. FIG. 1A and FIG. 1B In the illustrative design with four stations 130, there are four end effectors 126, such as... FIG. 4BAs best seen in the isolated view of the main shaft 125. For other numbers of stations, the number of end effectors can vary, for example, five stations, five end effectors can be provided. The purge gas baffle 200 can replace the index plate 128 of the main shaft 125 of the lower or bottom end or portion 120 of the process chamber 100. Another way is that the baffle 200 is suitably used as or forms the index plate of the main shaft 125. Thus, for example, for the corresponding station 130, the baffle 200 is located in the middle of the two arrays of two mounting structures 122. The purge gas baffle 200 has a curved upper surface as seen in FIG. 3 FIG. 1, which is designed to direct the distribution of NF3or other purge gas during process chamber purge as disclosed herein, particularly upwardly toward the showerhead 112 of the corresponding station 130. In contrast, the index plate 128 has a flat upper surface, which does not provide this advantageous direction of purge gas distribution.

[0040] In some suitable embodiments, for example, as shown in FIG. 3 FIG. 2, the baffle 200 has a central hub 210 and at a periphery 220, a first surface 230 extends therebetween. In some suitable embodiments, a central vertical axis (i.e., the Z-axis of the figure) extends through the central hub 210 of the baffle, for example, substantially normal or perpendicular to it. In some suitable embodiments, the baffle 200 is disposed within the process chamber 100 (e.g., supported by the floor 126 of the lower or bottom end or portion 120 of the process chamber 100) such that at the periphery 220 of the baffle 210, a second surface 240 (opposite the first surface 230) of the baffle 200 can be in a range of greater than or equal to 0 millimeters (mm) and less than or equal to 30 mm from the floor 126 of the lower or bottom end or portion 120 of the process chamber 100.

[0041] In some embodiments, within the process chamber 100, the baffle 200 and the purge gas inlet port 116 are aligned with each other, for example, along and / or above the Z-axis, such that the first surface 230 of the baffle 200 faces the inlet port 116. That is, within the process chamber 100, the purge gas inlet port 116 is substantially aligned above and / or on the baffle 200. Thus, purge gas introduced and / or flowed into the process chamber 100 from the inlet port 116 is initially directed in a downward and / or on the first surface 230 of the baffle 200 direction.

[0042] In some suitable embodiments, the surface 230 of the deflector 200 has multiple different areas or regions, some of which deflect or guide the flow of cleaning gas impacting thereon along a trajectory or otherwise toward the upper or top portion 110 of the process chamber 100 (i.e., the end of the process chamber 100 where the cleaning gas is initially introduced through the inlet port 116), while others deflect or guide the flow of cleaning gas impacting thereon along a trajectory or otherwise toward the lower or bottom portion 120 of the process chamber 100 (i.e., the end opposite to the direction in which the cleaning gas is initially introduced through the inlet port 116). More specifically, in some embodiments, the first surface 230 in the deflector 200 may have: (i) one or more recesses 232, each at least partially defined by a first suitable parabolic arc concave upwards, and (ii) one or more ridges 234, each at least partially defined by a second suitable parabolic arc concave downwards. In practice, the recess 232 can act or tend to deflect or guide the flow of cleaning gas impacting it back along a trajectory or toward the upper or top portion 110 of the process chamber 100, while the ridge 234 can act or tend to deflect or guide the flow of cleaning gas impacting it along a trajectory or otherwise toward the lower or bottom portion 120 of the process chamber 100. Thus, during the execution of the cleaning process, the cleaning gas impacting the first surface 230 of the guide plate 200 is effectively and / or efficiently guided and / or distributed to the upper or top portion 110 and the lower or bottom portion 120 of the process chamber 100, resulting in more efficient and / or effective cleaning throughout the process chamber 100. Therefore, the cleaning frequency and / or cleaning duration can be correspondingly limited, which in turn can result in a greater overall semiconductor manufacturing throughput through the process chamber 100, for example, compared to when such a guide plate 200 is not used or is absent in the process chamber 100.

[0043] In some suitable embodiments, for example, such as FIG. 5 As shown, along the bisecting cross-section of the guide vane 200, the first surface 230 is defined by at least two arcs 230a and 230b, with a curvature point 230c between them. In some suitable embodiments, the first arc 230a (which at least partially defines one of the recesses 232) is a concave shape in a first direction (for example, upward) between the central hub 210 and the curvature point 230c; and the second arc 230b (which at least partially defines one of the ridges 234) is a concave shape in a second direction (for example, downward) between the curvature point 230c and the periphery 220, wherein the second direction is opposite to the first direction.

[0044] In some suitable embodiments, each of arcs 230a and 230b may be a parabola. In some suitable embodiments, the first arc 230a may have a radius of curvature in the range of greater than or equal to 20 mm and less than or equal to 500 mm, and the second arc 230b may have a radius of curvature in the range of greater than or equal to 10 mm and less than or equal to 300 mm.

[0045] As shown, the deflector 200 has a second surface 240 relative to the first surface 230. The thickness of the deflector 200 at any given point is given by the distance between the first surface 230 and the second surface 240 (for example, measured in the Z-axis direction). In some suitable embodiments, the deflector has a first thickness h1 at the central hub 210, a second thickness h2 at a local minimum of the first arc 230a, and a third thickness h3 at a local maximum of the second arc 230b. In some suitable embodiments, the first thickness h1 is greater than the third thickness h3, and the third thickness h3 is greater than the second thickness h2.

[0046] For example, such as FIG. 5 As shown, the first arc 230a extends a first distance i, measured in a radial direction perpendicular to the central vertical axis Z, between the central hub 210 and the inflection point 230c of the guide vane 200; and the second arc 230b extends a second distance ii, also measured in a radial direction perpendicular to the central vertical axis Z, between the inflection point 230c and the periphery 220 of the guide vane 200. In some suitable embodiments, the ratio of the first distance i to the second distance ii (i.e., i / ii) can be greater than or equal to 1 and less than or equal to 5.

[0047] In some embodiments, the overall shape and / or profile of the surface 230 of the deflector 200 is defined and / or additionally established by a suitable set and / or combination of various ridges and recesses. According to a suitable embodiment, in order to understand and / or illustrate some suitable shapes and / or profiles of the first surface 230 of the deflector 200, FIG. 6A to FIG. 6D Various perspective views of the deflector 200 are shown, with corresponding cross-sections removed along their respective cross-sectional lines. More specifically, FIG. 6A This shows a perspective view of the air deflector 200, part of which is cut along the cross-sectional line AA. FIG. 6B This shows a perspective view of the air deflector 200, part of which is cut along the cross-sectional line BB. FIG. 6C Showing a perspective view of a portion of the air deflector 200, partially cut along the cross-sectional line CC. FIG. 6D This shows a perspective view of the deflector 200, part of which is cut along the cross-sectional line DD. FIG. 5A cross-sectional view of the flow guide 200 taken along bisecting cross- sectional line 5-5 is shown. In some suitable embodiments, the surface 230 of the flow guide 200 exhibits mirror symmetry with respect to the vertical Z and / or section line D-D and / or radial with respect to section line 5-5 extending through the central hub 210 of the flow guide 200.

[0048] FIG. 7A and FIG. 7B A gas flow simulation during a cleaning of the process chamber is illustrated. FIG. 7A A gas flow in a chamber with a flat index plate 128 (e.g., as shown in FIG. 1A and FIG. 1B is shown. FIG. 4A and FIG. 4B is shown. FIG. 7B A gas flow in a chamber is shown where the flow guide 200 has the curved upper surface in place of the index plate 128. In FIG. 7A and FIG. 7B The gas flow through a single station 130 is shown in the flow simulation diagrams presented in FIG. 2 . The inlet cleaning gas flow 250 corresponds to the flow of cleaning gas through the inlet port 116 into the process chamber (see ). A no-gas zone 252 corresponds to the volume occupied by the mounting structure 122 of the station 130, while a no-gas zone 254 corresponds to the volume occupied by the solid material of the showerhead 112.

[0049] As seen in FIG. 7A , in the case of a process chamber with a flat index plate 128, the process gas distribution generally has a flat, horizontal high density zone 256 corresponding to the flow of cleaning gas over the upper surface of the mounting structure 122 (corresponding to the no-gas zone 252 of the gas flow simulation). On the other hand, a very low gas density 258 exists in the region near (i.e., below) the showerhead 112 (corresponding to the no-gas zone 254), and a low cleaning gas density 260 also exists in the drawn vacuum well or recess 124. Thus, the showerhead 112 and the well or recess 124 are not effectively cleaned by NH3or other cleaning gas during the cleaning process because of the low gas densities in regions 258 and 260, respectively.

[0050] In contrast, FIG. 7B A gas flow simulation in the case of using the flow guide 200 is illustrated. The effect of the flow guide 200 is to deflect a large portion of the cleaning gas flow 250 upward toward the showerhead 112, thereby creating a high cleaning gas density 268 in the region near (i.e., below) the showerhead 112. This corresponds to the cleaning gas following the curved upper surface of the flow guide 200. FIG. 5The trajectories represented by arrows 350 in FIG. 3 flow toward the upper or top end or portion 110 of the process chamber 100. The baffle 200 also serves to deflect another portion of the cleaning gas flow 250 downward into the well or recess 124, thereby creating a region 270 of relatively higher gas density. This corresponds to the cleaning gas flow along the path represented by arrows 350 in FIG. 3. FIG. 5 The trajectories represented by arrows 352 in FIG. 3 flow toward the lower or bottom end or portion 120 of the process chamber 100. Thus, when the baffle 200 is used, due to the deflection of the cleaning gas flow 250, high gas density regions 268 and 270 are created, respectively, during the cleaning process, the showerhead 112 and the well or recess 124 are effectively cleaned by the NH3or other cleaning gas when the baffle 200 is used.

[0051] From now on, reference is made to FIG. 8 FIG. 3 shows a flowchart illustrating a semiconductor manufacturing process 300 according to some embodiments of the present disclosure, which employs, for example, a multi-station process chamber 100 equipped with a baffle 200.

[0052] As shown, in step 310, one or more semiconductor wafers or suitable substrates are loaded into selected stations 130 in the process chamber 100. For example, each loaded semiconductor wafer or substrate can be suitably placed in and / or affixed (e.g., by an associated chuck) to a selected one of the mounting structures 122. Such loading can be facilitated and / or performed, for example, with the assistance of a robot arm of an EFEM or the like.

[0053] In step 320, material deposition processes, e.g., ALD, are performed on the semiconductor wafers or substrates loaded within the process chamber 100 to form material layers or films on the semiconductor wafers or substrates loaded in the stations 130 of the process chamber 100. In some embodiments, this is achieved by introducing and / or flowing gaseous precursors or reagents through the respective showerheads 112 into and / or through the process chamber 100. Indeed, during step 320, the semiconductor wafers or substrates loaded within each station 130 can be heated to and / or maintained at a desired operating temperature by the heaters or heating elements provided for the respective mounting structures 122 and / or stations 130. Moreover, during step 320, the vacuum system can be suitably operated and / or controlled to create or otherwise facilitate the formation of a desired gaseous precursor or reagent through the process chamber 100 such that the surfaces of the loaded semiconductor wafers or substrates receive the same desired exposure thereto. Suitably, upon, at or near completion of step 320, the vacuum system can continue to operate or be used or otherwise facilitate the purging or removal of any remaining precursors or reagents or other gases or the like from the process chamber 100, and at step 330, the processed semiconductor wafers or substrates (having the newly formed material layers or films thereon) can be sequentially unloaded and / or otherwise removed from their stations 130 of the process chamber 100, e.g., the respective chucks having been disengaged. Indeed, steps 310 through 330 can optionally be repeated one or more times prior to the processing-to-cleaning step 340.

[0054] As shown in step 340, the process chamber 100 is periodically or intermittently cleaned or otherwise subjected to a cleaning process, e.g., between cycles of steps 310 through 330.

[0055] In some suitable embodiments, as shown in sub-step 342, the cleaning process 340 includes introducing and / or initially flowing a cleaning gas, e.g., NF3, into and / or toward the process chamber 100, e.g., from the inlet port 116 toward the baffle 200. In some suitable embodiments, as shown in sub-step 344, upon impinging the baffle 200, the various dimples 134 and ridges 234 formed on the surface 130 of the baffle 200 act or tend to deflect the impinging cleaning gas both (a) back toward the upper or top end or portion 110 of the process chamber 100 (i.e., the end from which the cleaning gas was initially introduced into the process chamber 100 through the inlet port 116) in a direction or trajectory (graphically represented, e.g., by arrow 350 in FIG. 5 FIG. 5 ​the process chamber 100 (i.e., the end opposite the location where the purge gas is initially introduced through the inlet port 116). As such, during the performance of the purge process 340, the purge gas impinging the first surface 230 of the baffle 200 is effectively directed and / or distributed to both the upper or top end or portion 110 and the lower or bottom end or portion 120 of the process chamber 100, resulting in more effective and / or efficient purging throughout the process chamber 100. As a result, the purge frequency and / or purge duration can be correspondingly limited, which in turn can result in greater overall semiconductor manufacturing throughput through the process chamber 100, for example, as compared to when no such baffle 200 is used or present in the process chamber 100 during the purge process.

[0056] In some suitable embodiments, during the purge process or step 340, the vacuum system can be suitably operated and / or controlled to create or otherwise facilitate the desired purge gas flow throughout the process chamber 100. Further, after, at or near completion of the step 340, the vacuum system can continue to operate or be used or otherwise facilitate the purging or removal of any remaining purge or other gases or the like from the process chamber 100.

[0057] Reference is now made to FIG. 9 In some embodiments, suitable controller 400 can be implemented by hardware, software, firmware, or suitable combinations thereof to control, regulate and / or coordinate the operation of various elements and / or components described herein to implement any one or more of the processes and / or steps described herein. For example, as shown, the controller 400 can regulate and / or control the operation of, but is not limited to: the showerhead 112 and / or introduction and / or flow of precursors and / or reagents thereto; the heaters or heating elements 410 associated with and / or provided for each station 130 or mounting structure 122; the chucks 420 associated with and / or provided for each station 130 or mounting structure 122; the vacuum system 430 associated with and / or provided for each station 130; and the purge gas inlet port 116 and / or introduction and / or flow of purge gas thereto.

[0058] In particular, one or more controllers can be embodied by a configuration processor, electronic circuitry, computer and / or other electronic data processing device and / or otherwise provided to perform one or more of the task steps, processes, methods and / or functions described herein. For example, a processor, computer, server or other electronic data processing device embodying the controller can be provided with and / or programmed with a suitable list of codes (e.g., object code, interpreted code, object code, directly executable code, etc.) or other like instructions or software or firmware such that, when executed and / or performed by the computer or other electronic data processing device, one or more of the tasks, steps, processes, methods and / or functions described herein are accomplished or otherwise performed. Suitably, the list of codes or other like instructions or software or firmware is embodied in and / or recorded, stored, contained or included in and / or on a non-transitory computer and / or machine readable storage medium or media so as to be available to and / or executable by the computer or other electronic data processing device. For example, suitable storage media and / or media can include, but are not limited to, a diskette, a floppy disk, a hard disk, a magnetic tape or any other magnetic storage medium or media, a CD-ROM, a DVD, an optical disk or any other optical medium or media, a RAM, a ROM, a PROM, an EPROM, a FLASH-EPROM, or other memory or chip or cartridge, or any other tangible medium or media that a computer or machine or electronic data processing device can read and use. In essence, as used herein, a non-transitory computer readable and / or machine readable medium and / or media includes all computer readable and / or machine readable media and and / or media except for transitory, propagating signals.

[0059] Generally, any of the particular tasks, steps, processes, methods, functions, elements and / or components described herein can be implemented in one or more general purpose computers and / or embodiments, special purpose computers, programmable microprocessors or microcontrollers and peripheral integrated circuit elements, ASICs or other integrated circuits, digital signal processors, hardwired electronic or logic circuitry such as discrete element circuitry, programmable logic devices such as PLDs, PLA, FPGA, GPU or PAL, etc. Typically, any of the tasks, steps, processes, methods and / or functions described herein can be performed by a combination of hardware and software. In particular, one or more controllers can be embodied by a configuration processor, electronic circuitry, computer and / or other electronic data processing device and / or otherwise provided to perform one or more of the task steps, processes, methods and / or functions described herein. For example, a processor, computer, server or other electronic data processing device embodying the controller can be provided with and / or programmed with a suitable list of codes (e.g., object code, interpreted code, object code, directly executable code, etc.) or other like instructions or software or firmware such that, when executed and / or performed by the computer or other electronic data processing device, one or more of the tasks, steps, processes, methods and / or functions described herein are accomplished or otherwise performed. Suitably, the list of codes or other like instructions or software or firmware is embodied in and / or recorded, stored, contained or included in and / or on a non-transitory computer and / or machine readable storage medium or media so as to be available to and / or executable by the computer or other electronic data processing device. For example, suitable storage media and / or media can include, but are not limited to, a diskette, a floppy disk, a hard disk, a magnetic tape or any other magnetic storage medium or media, a CD-ROM, a DVD, an optical disk or any other optical medium or media, a RAM, a ROM, a PROM, an EPROM, a FLASH-EPROM, or other memory or chip or cartridge, or any other tangible medium or media that a computer or machine or electronic data processing device can read and use. In essence, as used herein, a non-transitory computer readable and / or machine readable medium and / or media includes all computer readable and / or machine readable media and and / or media except for transitory, propagating signals.

[0060] In the following, some further illustrative embodiments are described.

[0061] In some embodiments, a method of manufacturing semiconductor devices is provided. The method includes loading one or more semiconductor wafers into a plurality of stations provided within a process chamber; applying a process to the semiconductor wafers, wherein material is deposited on the one or more semiconductor wafers within the process chamber; and cleaning the process chamber. Suitably, cleaning the process chamber includes flowing a cleaning gas toward the process chamber and toward a baffle disposed in the process chamber, the baffle having a first surface on which the flowing cleaning gas impinges, the first surface directing a first portion of the flowing cleaning gas impinging thereon in a first trajectory toward a first end of the process chamber and directing a second portion of the flowing cleaning gas impinging thereon in a second trajectory toward a second end of the process chamber, the second end being opposite the first end.

[0062] In yet other embodiments, the material includes silicon oxycarbide (SiCO).

[0063] In still further embodiments, the baffle has a central hub and a periphery, the first surface extends therebetween, and along a bisecting cross-section of the baffle, the first surface is defined by at least two arcs having an inflection point therebetween, the at least two arcs including a first arc that is concave in a first direction between the central hub and the inflection point and a second arc that is concave in a second direction between the inflection point and the periphery, the second direction being opposite the first direction.

[0064] In some embodiments, the first and second arcs are parabolic.

[0065] In still further embodiments, the first arc has a radius of curvature in a range between greater than or equal to 20 mm and less than or equal to 500 mm, and the second arc has a radius of curvature in a range between greater than or equal to 10 mm and less than or equal to 300 mm.

[0066] In yet other embodiments, the baffle has a second surface opposite the first surface, such that a thickness of the baffle is given by a distance between the first and second surfaces, the baffle has a first thickness at the central hub, a second thickness at a local minimum of the first arc, and a third thickness at a local maximum of the second arc, the first thickness being greater than the third thickness, the third thickness being greater than the second thickness.

[0067] In some embodiments, the first surface has a plurality of parabolic depressions for directing the first portion of the flowing cleaning gas impinging thereon in the first trajectory toward the first end of the process chamber, and a plurality of parabolic ridges for directing the second portion of the flowing cleaning gas impinging thereon in the second trajectory toward the second end of the process chamber.

[0068] In yet another embodiment, the cleaning gas includes nitrogen trifluoride.

[0069] In some embodiments, the applying a process includes an atomic layer deposition process.

[0070] In yet other embodiments, a process chamber is provided for depositing material on one or more semiconductor wafers. The process chamber includes a plurality of mounting structures each arranged to selectively receive a semiconductor wafer on a top portion thereof, one or more showerheads to introduce a process gas therefrom into the process chamber to form a thin film of material on one or more semiconductor wafers placed on the plurality of mounting structures, a port to flow a purge gas from thereinto the process chamber, and a baffle having a central hub, a periphery, and a first surface extending between the central hub and the periphery, the first surface facing the port, and along a bisecting cross-section of the baffle, the first surface is defined by at least two arcs having an inflection point therebetween, the at least two arcs including a first arc that is concave in a first direction between the central hub and the inflection point, and a second arc that is concave in a second direction between the inflection point and the periphery, the second direction being opposite the first direction.

[0071] In still further embodiments, the process chamber is a silicon carbon oxide (SiCO) deposition chamber.

[0072] In yet additional embodiments, the process chamber further includes a spindle including a plurality of end effectors to manipulate the semiconductor wafers, and wherein the baffle forms a nosepiece of the spindle.

[0073] In additional embodiments, the first arc has a radius of curvature in a range of greater than or equal to 20 mm and less than or equal to 500 mm, and the second arc has a radius of curvature in a range of greater than or equal to 10 mm and less than or equal to 300 mm.

[0074] In some embodiments, the baffle has a second surface opposite the first surface, such that a thickness in the baffle is given by a distance between the first and second surfaces, the baffle has a first thickness at the central hub, a second thickness at a local minimum of the first arc, and a third thickness at a local maximum of the second arc, the first thickness is greater than the third thickness, and the third thickness is greater than the second thickness.

[0075] In some embodiments, the baffle is supported within the process chamber such that, at the periphery of the baffle, the second surface of the baffle is in a range of greater than or equal to 0 mm and less than or equal to 30 mm from a floor of the process chamber.

[0076] In yet other embodiments, the plurality of mounting structures includes at least four mounting structures arranged on a floor of the process chamber, and the baffle is also arranged on the floor of the process chamber among the at least four mounting structures.

[0077] In still further embodiments, a common vertical axis extends through the central hub of the baffle and the port.

[0078] In yet other embodiments, a purge gas deflector is provided that deflects purge gas flowing into a semiconductor process chamber in which a plurality of mounting structures on which one or more semiconductor wafers are selectively placed to form layers and materials thereon are housed. The purge gas deflector includes a central hub through which a central vertical axis extends, a periphery, and a first surface extending between the central hub and the periphery, wherein the first surface has (i) one or more depressions therein, each depression being at least partially defined by a first parabolic arc that is concave upward, and (ii) one or more ridges therein, each ridge being at least partially defined by a second parabolic arc that is concave downward.

[0079] In yet another embodiment, the first and second parabolic arcs define the first surface along a bisecting cross-section of the deflector, the first arc extending from the central hub to an inflection point, the second arc extending from the inflection point to the periphery, wherein a ratio of a first distance to a second distance is in a range between greater than or equal to 1 and less than or equal to 5, wherein the first distance is a distance measured between the central hub and the inflection point in a direction perpendicular to the central vertical axis, and the second distance is a distance measured between the inflection point and the periphery also in the direction perpendicular to the central vertical axis, i.e., the second distance is less than or equal to the first distance.

[0080] In still further embodiments, the first parabolic arc has a radius of curvature in a range between greater than or equal to 20 mm and less than or equal to 500 mm, and the second parabolic arc has a radius of curvature in a range between greater than or equal to 10 mm and less than or equal to 300 mm.

[0081] The foregoing outlines features of several embodiments so that those skilled in the art can better understand the present disclosure presented herein. Those skilled in the art should appreciate that they can readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and / or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and alterations herein without departing from the spirit and scope of the present disclosure.

Claims

1. A method for manufacturing a semiconductor device, characterized in that, The method includes: Load one or more semiconductor wafers into multiple stations provided within the process chamber; Applying a process to the semiconductor wafer, wherein a material is deposited on the one or more semiconductor wafers within the process chamber; and Clean the process chamber. The cleaning includes: The cleaning gas flows toward the process chamber toward a guide plate disposed within the process chamber. The guide plate has a first surface on which the flowing cleaning gas impacts. The first surface guides a first portion of the cleaning gas along a first trajectory toward a first end of the process chamber, and a second portion of the cleaning gas along a second trajectory toward a second end of the process chamber, the second end being opposite the first end. The guide plate forms the index plate of the main shaft of the process chamber. The first surface has multiple parabolic indentations, which guide the first portion of the flowing cleaning gas impacting it toward the first end of the process chamber in the first trajectory, and multiple parabolic ridges, which guide the second portion of the flowing cleaning gas impacting it toward the second end of the process chamber in the second trajectory, where the first end is the top end of the process chamber and the second end is the bottom end of the process chamber.

2. The method according to claim 1, characterized in that, The material includes silicon dioxide.

3. The method according to claim 1, characterized in that, The deflector has a central hub and a periphery, with a first surface extending therebetween and along the bisecting cross-section of the deflector. The first surface is defined by at least two arcs having a point of inflection therebetween. The at least two arcs include a first arc that is concave in a first direction between the central hub and the point of inflection, and a second arc that is concave in a second direction between the point of inflection and the periphery, the second direction being opposite to the first direction.

4. The method according to claim 3, characterized in that, The first arc and the second arc are parabolas.

5. The method according to claim 3, characterized in that, The first arc has a radius of curvature between 20 mm and 500 mm, and the second arc has a radius of curvature between 10 mm and 300 mm.

6. The method according to claim 3, characterized in that, The guide plate has a second surface opposite to the first surface, such that the thickness of the guide plate is given by the distance between the first surface and the second surface, and the guide plate has a first thickness at the central hub, a second thickness at the local minimum of the first arc and a third thickness at the local maximum of the second arc, wherein the first thickness is greater than the third thickness and the third thickness is greater than the second thickness.

7. The method according to claim 1, characterized in that, The cleaning gas contains nitrogen trifluoride.

8. The method according to claim 1, characterized in that, The application process includes atomic layer deposition (ALD).

9. A process chamber for depositing material on one or more semiconductor wafers, characterized in that, The process chamber includes: Multiple mounting structures, each of which is arranged to selectively receive a semiconductor wafer on its top; One or more nozzles introduce process gases from them into the process chamber to form a thin film of material on one or more semiconductor wafers placed on the plurality of mounting structures; The port allows cleaning gas to flow from it into the process chamber; and A flow guide plate has a central hub, a periphery, and a first surface extending between the central hub and the periphery. The first surface faces the port and bisects the cross-section of the flow guide plate. The first surface is defined by at least two arcs having a concave point therebetween. The at least two arcs include a first arc, which is concave in a first direction between the central hub and the concave point, and a second arc, which is concave in a second direction between the concave point and the periphery, the second direction being opposite to the first direction. The flow guide plate forms an index plate of the main axis of the process chamber. The first surface has multiple parabolic recesses, which guide the first portion of the flowing cleaning gas impacting it toward the first end of the process chamber in a first trajectory, and multiple parabolic ridges, which guide the second portion of the flowing cleaning gas impacting it toward the second end of the process chamber in a second trajectory. The first end is the top end of the process chamber, and the second end is the bottom end of the process chamber.

10. The process chamber according to claim 9, characterized in that, The process chamber is a silicon dioxide deposition chamber.

11. The process chamber according to claim 9, characterized in that, in: The spindle includes multiple end effectors for manipulating the semiconductor wafer.

12. The process chamber according to claim 9, characterized in that, The first arc has a radius of curvature in the range of greater than or equal to 20 mm and less than or equal to 500 mm, and the second arc has a radius of curvature in the range of greater than or equal to 10 mm and less than or equal to 300 mm.

13. The process chamber according to claim 9, characterized in that, The guide plate has a second surface opposite to the first surface, such that the thickness of the guide plate is given by the distance between the first and second surfaces, the guide plate has a first thickness at the central hub, a second thickness at a local minimum of the first arc and a third thickness at a local maximum of the second arc, the first thickness being greater than the third thickness and the third thickness being greater than the second thickness.

14. The process chamber according to claim 13, characterized in that, The guide plate is supported within the process chamber such that, at the periphery of the guide plate, the second surface of the guide plate is within a range of 0 mm to 30 mm from the floor of the process chamber.

15. The process chamber according to claim 9, characterized in that, The plurality of mounting structures includes at least four mounting structures arranged on the base of the process chamber, and the guide plate is also arranged on the base of the process chamber among the at least four mounting structures.

16. The process chamber according to claim 9, characterized in that, A common vertical axis extends through the central hub and the port of the deflector.

17. A cleaning gas deflector for deflecting cleaning gas into a semiconductor process chamber having a plurality of mounting structures, on which one or more semiconductor wafers are selectively placed for forming layers and materials, characterized in that, The cleaning gas guide plate includes: A central hub, wherein a central vertical axis extends through the central hub; The periphery; and The first surface extends between the central hub and the periphery. The first surface has: (i) one or more recesses therein, each recess being at least partially defined by an upwardly concave first parabolic arc, and (ii) one or more ridges therein, each ridge being at least partially defined by a downwardly concave second parabolic arc, and the flow guide plate forming an index plate of the main axis of the semiconductor process chamber, the recesses acting to deflect or guide the flow of the cleaning gas impacting thereon along a first trajectory toward the top of the process chamber, and the ridges acting to deflect or guide the flow of the cleaning gas impacting thereon along a second trajectory toward the bottom of the process chamber.

18. The cleaning gas guide plate according to claim 17, characterized in that, The first parabolic arc and the second parabolic arc define the first surface along the bisecting cross section of the guide plate. The first parabolic arc extends from the central pivot to the inflection point, and the second parabolic arc extends from the inflection point to the periphery. The ratio of the first distance to the second distance is between 1 and 5. The first distance is the distance between the central pivot and the inflection point measured in a direction perpendicular to the central vertical axis, and the second distance, also measured in a direction perpendicular to the central vertical axis, is the distance between the inflection point and the periphery.

19. The cleaning gas guide plate according to claim 17, characterized in that, The first parabolic arc has a radius of curvature between 20 mm and 500 mm, and the second parabolic arc has a radius of curvature between 10 mm and 300 mm.

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