A multi-field coupled assisted enhanced jet cross-hole deburring chemical mechanical polishing equipment and processing method

Abstract

This invention provides a multi-field coupled assisted enhanced jet deburring chemical mechanical polishing (CMP) equipment and processing method for intersecting holes, including a frame and a processing chamber, collection chamber, filter chamber, material chamber, water tank, nozzle system, light source, ultrasonic generator, vacuum pump, high-pressure pump, control system, and sheet metal casing installed within the frame. It applies CMP to the polishing of intersecting internal holes, achieving precise removal of burrs and precision polishing of the inner walls of deep intersecting holes. By introducing a light source into the nozzle system, photocatalytic assistance is used to increase the chemical reaction rate in CMP, lower the reaction barrier, and improve reaction activity, thereby increasing polishing efficiency. Simultaneously, by controlling the high-pressure pump pressure and the flow deflector, the flow field behavior within the nozzle system can be precisely controlled, avoiding excessive damage defects such as "over-polishing," "beveling," and "under-polishing" during the deburring of deep intersecting holes, thus achieving precise removal of burrs and precision polishing of the inner walls of deep intersecting holes.

Description

Technical Field

[0001] This invention relates to the field of machining equipment technology, and in particular to a multi-energy field coupled assisted enhanced jet cross-hole deburring chemical mechanical polishing equipment and processing method. Background Technology

[0002] For large main reducer housings and engine accessory transmission housings, the manufacturing process typically involves integral casting followed by drilling to create fuel and lubricating oil passages. After machining, the internal oil passages of the housing are characterized by interconnected small-diameter deep holes. This machining process results in defects such as burrs, rolled edges, and rough edges at the junctions between holes and between holes and the blank. These defects are often in a state of being "visible but inaccessible, or incompletely accessible," and are difficult to clean effectively with existing tools and methods. If the burrs in the intersecting oil passages are not cleaned properly, they may detach during later testing and field use due to oil erosion, causing metal contamination and clogging of the oil passages, thus affecting equipment performance and operational safety.

[0003] Meanwhile, the surface roughness Ra of the inner hole after drilling should be ≥3.2μm, while the surface roughness Ra of a high-performance casing should be ≤0.8μm. The surface roughness of deep holes drilled by ordinary methods does not meet the service requirements of high-performance casings. Therefore, under current technological conditions, the inner wall of the drilled hole in the cast casing still needs further processing with polishing and deburring equipment to meet service requirements. Existing mechanical deburring and polishing methods, such as soft abrasive belt polishing and robotic polishing, are difficult to remove burrs in deep intersecting holes due to tool head size limitations, making it difficult / impossible to achieve precision polishing of the inner wall of deep intersecting holes. Traditional abrasive flow and water jet processing methods have low material removal rates and low processing efficiency, and the ejected fluid is uncontrollable. When polishing and deburring deep intersecting holes, defects such as "over-polishing," "beveling," and "under-polishing" are prone to occur, making it difficult to achieve accurate removal of burrs and precision polishing of the inner wall of deep intersecting holes. In summary, traditional deburring and polishing methods mainly rely on mechanical stress to remove material, and are not suitable for deburring and precision polishing of the inner wall of deep intersecting holes.

[0004] Chemical mechanical polishing (CMP) is currently the best method for achieving global planarization and is widely used in chip wafer manufacturing. Its advantages include the ability to create nanoscale and sub-nanometer-level surfaces and control damage layers. The process can be simply summarized as follows: First, the CMP slurry reacts chemically with the workpiece surface, forming a thin softening layer. This softening layer is then removed by the mechanical action of abrasives and polishing pads, exposing a fresh surface. The process then repeats, forming another softening layer. Ultimately, global surface planarization is achieved through this continuous alternating process of chemical film formation and mechanical film removal. CMP is typically used for polishing planar parts; however, it is currently difficult to achieve deburring and precision polishing within deep intersecting holes. Summary of the Invention

[0005] To address the aforementioned technical problems, this paper provides a multi-field coupled assisted enhanced jet deburring chemical mechanical polishing (CMP) equipment and processing method for intersecting holes. This method enables deburring and precision polishing of the inner walls of deep intersecting holes after drilling, solving the problems of unremovable burrs and high surface roughness of the inner walls after drilling of cast casings. It overcomes the difficulties of existing mechanical deburring and polishing methods, which struggle to achieve precision polishing of the inner walls of deep intersecting holes, and the inherent defects of traditional abrasive flow and water jet processing methods, such as over-polishing, chamfering, and under-polishing.

[0006] The technical means employed in this invention are as follows:

[0007] A multi-field coupled assisted enhanced jet cross-hole deburring chemical mechanical polishing (CMP) system includes a frame and a processing chamber, a collection chamber, a material chamber, a water tank, a nozzle system, a light source, an ultrasonic generator, a high-pressure pump, and a control system, all installed within the frame. The processing chamber, collection chamber, material chamber, and water tank are sequentially connected. The processing chamber holds the workpiece and contains the CMP slurry, with nozzle system mounting positions located around its outer perimeter. The collection chamber, installed at the bottom of the processing chamber, collects and initially filters burrs and other impurities mixed in the CMP slurry. The material chamber removes abrasive particles from the CMP slurry. The components are stored separately; the water tank is used to hold the chemical mechanical polishing slurry, and the output end of the water tank is connected to the nozzle system via a high-pressure pump; the light source is mounted on the frame and connected to the light source interface of the nozzle system. The light source is used to enhance the chemical reaction activity through photocatalysis, thereby enhancing the chemical mechanical polishing process; the ultrasonic generator is connected to the nozzle system and is used to enhance the mechanical force of the abrasive particles in the chemical mechanical polishing slurry through controllable ultrasonic assistance; the control system is used to adjust the pressure of the high-pressure pump and the output state of the nozzle and its internal units, thereby precisely controlling the flow field behavior after multi-energy field coupling within the nozzle system.

[0008] Furthermore, the collection chamber has a funnel-shaped structure, wider at the top and narrower at the bottom. A screen is installed between the collection chamber and the processing chamber to collect and initially filter burrs and other impurities mixed in the chemical mechanical polishing fluid. The chamber also includes a filter chamber, which is a square structure that runs vertically through the chamber and is installed at the bottom of the collection chamber. A screen is installed between the filter chamber and the collection chamber to further filter smaller burrs and other impurities mixed in the chemical mechanical polishing fluid.

[0009] Furthermore, the material chamber is a square structure that runs vertically through the filter chamber and is installed at the bottom of the filter chamber. A screen is provided between the filter chamber and the material chamber to further filter out smaller burrs and other impurities mixed in the chemical mechanical polishing fluid. A screen is also provided between the bottom of the material chamber and the water tank to separate and store the abrasive particles in the chemical mechanical polishing fluid in the material chamber. An agitator is installed near the bottom of the material chamber, and the material chamber has a material chamber outlet on the side wall below the agitator. The abrasive particles in the chemical mechanical polishing fluid are collected in the material chamber through multi-stage filtration and re-enter the recycling cycle through the material chamber outlet. The agitator is used to stir up the abrasive particles in the material chamber to prevent the abrasive particles from settling at the bottom of the material chamber and clogging the screen.

[0010] Furthermore, the water tank is a box-shaped structure with a square inlet at the top, used to hold the chemical mechanical polishing slurry. It is installed at the bottom of the material compartment, with a water tank vent at the top of the side wall and a water tank outlet at the bottom of the side wall. The high-pressure pump is installed on one side of the water tank at the bottom of the frame, used to pump and pressurize the chemical mechanical polishing slurry. The high-pressure pump inlet is connected to the water tank outlet, and the high-pressure pump outlet is connected to the nozzle inlet of the nozzle system. The high-pressure pump can provide a pressure of 1 to 400 MPa. It also includes a vacuum pump, which is installed on the frame. The vacuum pump interface is connected to the water tank vent. When the vacuum pump is turned on, it can create a negative pressure in the water tank, which facilitates the chemical mechanical polishing slurry to pass through the dense mesh screen at the bottom of the material compartment.

[0011] Furthermore, the light source is detachable and can be a laser light source, infrared light source, or ultraviolet light source according to processing needs. Components in the chemical mechanical polishing slurry are excited under ultraviolet, visible, infrared, or laser light source irradiation, respectively generating electrons (electrons). - ) Guide band transfer, holes accumulate at the valence band location (h + It promotes charge transfer to the workpiece material surface, and the increased number of active sites adsorbing water or oxygen molecules in the polishing slurry can effectively capture photogenerated electrons. - and h + This generates hydroxyl radicals and superoxide radicals with strong oxidizing capabilities, thereby promoting a chemical reaction between the chemical mechanical polishing slurry and the workpiece surface. This causes the crystal lattice of the workpiece surface material to become distorted and deformed, reducing the bonding energy and activation energy of the chemical bonds and increasing the activity of surface atoms. As a result, the atoms can be oxidized by the oxidant to generate oxidation products, and then the oxide film is removed by the mechanical friction of the abrasive particles, thus improving the material removal rate.

[0012] Furthermore, the nozzle system includes a nozzle inlet, a valve seat, a light source interface, a mixer, a flow deflector, an ultrasonic housing, a transducer, a piezoelectric ceramic, a nozzle housing, a sealing ring, and a feed inlet. The nozzle inlet is a tubular structure, with one end connected to the outlet of a high-pressure pump. The pressurized chemical mechanical polishing (CMP) slurry enters the nozzle system through the nozzle inlet. The valve seat is a cylindrical structure with concave end faces and a central opening, installed inside the nozzle inlet with a clearance fit. The mixer is a tubular structure with a light source interface and a feed inlet on its outer cylindrical surface. One end of the mixer is threaded into the nozzle inlet and limits the valve seat. The light source interface is connected to a light source; laser, infrared, or ultraviolet light supplied through the light source interface can act as a photocatalyst within the mixer, enhancing the chemical reactivity of the CMP slurry. The feed inlet is connected to the outlet of the material chamber; abrasive particles from the material chamber enter the feed inlet through a pipeline and mix with the CMP slurry supplied through the nozzle inlet in the mixer.

[0013] Furthermore, the turbulence diffuser is installed inside the other end of the mixer. The turbulence diffuser includes a diffuser housing, a diffuser central shaft, and diffuser blades. A support is provided inside the diffuser housing, the diffuser central shaft is mounted on the diffuser housing support, and the diffuser blades are mounted on the diffuser central shaft. The turbulence diffuser is used to agitate the chemical mechanical polishing fluid passing through the mixer, forming a spiral-shaped vortex, increasing the shear force of the chemical mechanical polishing fluid on the inner wall of the deep hole, and controlling the vortex by adjusting the speed of the turbulence diffuser, thereby controlling the shear force and forming a stable removal function. The turbulence diffuser can be set to a powered type or a non-powered type according to the viscosity of the chemical mechanical polishing fluid. When the viscosity is high, the turbulence diffuser adopts a powered type, that is, a micro motor is set at the support inside the diffuser housing to drive the diffuser central shaft and then drive the diffuser blades to agitate. When the viscosity is low, the spoiler can be of the non-powered type, that is, the spoiler blades are set as twisted variable cross-section curved surfaces. The speed of the spoiler blades can be adjusted by adjusting the flow rate at the nozzle inlet, thereby achieving the spoiler's turbulence effect.

[0014] Furthermore, the ultrasonic generator is mounted on the frame and provides electrical energy to the piezoelectric ceramic of the nozzle system. The ultrasonic housing is a tubular structure, with one end threadedly connected to the inside of the mixer to limit the flow disturbance. The transducer is a tubular structure, installed inside the ultrasonic housing with a clearance fit. The inner wall of the transducer is provided with annular fins that deflect along the jet direction, and the minimum aperture of the transducer's inner wall is larger than the inner aperture of the valve seat. The outer wall of the transducer is provided with a shoulder, and annular sealing rings are provided at both ends of the transducer and at the shoulder to prevent liquid from entering. The piezoelectric ceramic is a circular structure, installed on the outer wall of the transducer with a clearance fit to the ultrasonic housing. One end of the piezoelectric ceramic is fixed to the shoulder of the ultrasonic housing, and the other end is fixed to the shoulder of the transducer. When the piezoelectric ceramic receives electrical energy, it converts the electrical energy into mechanical energy through the piezoelectric effect, driving the transducer to oscillate along the central axis of the ultrasonic housing, thereby generating a strong ultrasonic cavitation effect at the annular fins on the inner wall of the transducer. The nozzle housing is a tubular structure, with one end threadedly connected to the ultrasonic housing and the other end threadedly connected to the nozzle system mounting positions set around the outer wall of the processing chamber.

[0015] Furthermore, an electromagnetic coil is also installed within the nozzle housing. When the electromagnetic coil is energized, a controllable magnetic field is generated within the nozzle housing. As the chemical mechanical polishing slurry passes through the electromagnetic coil, the magnetic medium in the slurry enhances the holding force of the abrasive grains under the influence of the magnetic field, thereby increasing the grinding force of the slurry. Depending on the application requirements, the power supply to the electromagnetic coil can be controlled by the control system to create a constant magnetic field, thus generating a constant holding force. Alternatively, periodic or pulsed power supply to the electromagnetic coil can also create periodic or pulsed holding forces, thereby enhancing the erosion effect of the slurry on burrs.

[0016] Furthermore, the control system is used to integrate and control the operating parameters of the high-pressure pump, vacuum pump, ultrasonic generator, light source, and electromagnetic coil.

[0017] Furthermore, the frame is provided with an outer shell sheet metal, which includes an upper wall panel, side wall panels, and a front wall panel.

[0018] This invention also discloses a processing method using the above-mentioned multi-energy field coupling-assisted enhanced jet cross-hole deburring chemical mechanical polishing equipment, comprising the following steps:

[0019] Step 1: Open the top cover and place the workpiece into the processing chamber. According to the actual processing requirements, install the nozzle system on the outer wall of the processing chamber. The nozzle system must be directly facing the processing point. Alternatively, the nozzle shell of the nozzle system can be connected to the deep hole to be processed on the workpiece through a pipeline.

[0020] Step 2: Add the prepared chemical mechanical polishing slurry to the processing chamber, close the top cover, and simultaneously turn on the agitator and vacuum pump through the control system. When the liquid level in the tank is higher than the liquid outlet of the tank, turn on the high-pressure pump.

[0021] Step 3: After the high-pressure pump is turned on, the chemical mechanical polishing slurry begins to circulate. The speed of the high-pressure pump is set in the control system according to the processing requirements to ensure the outlet pressure. At the same time, the speed of the vacuum pump is set to ensure that a negative pressure is formed in the water tank, so that the abrasive particles in the chemical mechanical polishing slurry can be effectively separated in the material chamber and maintain dynamic balance.

[0022] Step 4: Set the operating parameters of the ultrasonic generator, light source, and electromagnetic coil as needed through the control system, and begin processing;

[0023] Step 5: After processing is complete, first turn off the high-pressure pump and vacuum pump simultaneously, then turn off other equipment, open the top cover, and unload the workpiece.

[0024] The present invention has the following advantages:

[0025] 1. This invention provides a chemical mechanical polishing (CMP) equipment and processing method for deburring cross holes using multi-energy field coupling-assisted enhanced jet polishing. It applies the CMP method to internal hole polishing, achieving precise removal of burrs and precision polishing of the inner wall of deep cross holes.

[0026] 2. This invention provides a multi-energy field coupled assisted enhanced jet deburring chemical mechanical polishing (CMP) equipment and processing method for cross-holes. It introduces a light source into the nozzle system to photocatalytically enhance the chemical reaction rate in CMP, lower the reaction barrier, and increase reaction activity, thereby improving polishing efficiency. Simultaneously, by controlling the high-pressure pump pressure and the flow deflector, the flow field behavior within the nozzle system can be precisely controlled, avoiding excessive damage defects such as "over-polishing," "beveling," and "under-polishing" during deep cross-hole deburring, thus achieving precise burr removal and inner wall polishing within deep cross-holes. Furthermore, controllable ultrasonic and magnetic field assistance enhance the mechanical force of the abrasive particles in the CMP slurry, effectively increasing the shearing and holding forces of the abrasive particles, improving material removal rate, and enhancing polishing efficiency. Because this equipment can simultaneously enhance both the chemical reaction process and the mechanical removal process in the CMP method, it significantly improves polishing efficiency and precision.

[0027] 3. This invention provides a multi-energy field coupled assisted enhanced jet cross-hole deburring chemical mechanical polishing equipment and processing method. By setting up a material chamber and multi-stage screens to separate abrasive particles in the chemical mechanical polishing fluid before entering the circulation process, the abrasive particles are prevented from entering the high-pressure pump, thereby improving the equipment life and reducing the consumption of chemical mechanical polishing fluid, which has certain economic advantages. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is a three-dimensional assembly structure diagram of the device in an embodiment of the present invention.

[0030] Figure 2 This is a schematic cross-sectional view of the three-dimensional partial structure assembly of the device in an embodiment of the present invention.

[0031] Figure 3 This is a three-dimensional structural diagram of the nozzle system in an embodiment of the present invention.

[0032] Figure 4 This is a schematic cross-sectional view of the three-dimensional structure of the nozzle system in an embodiment of the present invention.

[0033] Figure 5 This is an exploded cross-sectional view of the nozzle system in an embodiment of the present invention.

[0034] Figure 6 This is a three-dimensional structural diagram of the processing compartment in an embodiment of the present invention.

[0035] Figure 7 This is a three-dimensional structural diagram of the collection chamber in an embodiment of the present invention.

[0036] Figure 8 This is a three-dimensional structural diagram of the filter chamber in an embodiment of the present invention.

[0037] Figure 9 This is a three-dimensional structural diagram of the material compartment in an embodiment of the present invention.

[0038] Figure 10 This is a three-dimensional structural diagram of the water tank in an embodiment of the present invention.

[0039] Figure 11 This is a partial cross-sectional view of the three-dimensional structure of the spoiler in an embodiment of the present invention.

[0040] Figure 12 This is a three-dimensional structural diagram of the stirrer in an embodiment of the present invention.

[0041] Figure 13 This is an optical photograph of the inner wall of the workpiece before polishing in an embodiment of the present invention.

[0042] Figure 14 This is an optical photograph of the inner wall of the workpiece after polishing in an embodiment of the present invention.

[0043] In the diagram: 1. Top cover; 2. Nozzle system; 2.1. Nozzle inlet; 2.2. Valve seat; 2.3. Light source interface; 2.4. Mixer; 2.5. Baffle; 2.5.1. Baffle housing; 2.5.2. Baffle central shaft; 2.5.3. Baffle blade; 2.6. Ultrasonic housing; 2.7. Transducer; 2.8. Piezoelectric ceramic; 2.9. Nozzle housing; 2.10. Electromagnetic coil; 2.11. Sealing ring; 2.12. Feed inlet; 3. Machining 1. Cabin; 4. Upper wall panel; 5. Frame; 6. Side wall panel; 7. Control system; 8. Light source; 9. Ultrasonic generator; 10. Vacuum pump; 10.1 Vacuum pump interface; 11. High-pressure pump; 11.1 High-pressure pump inlet; 11.2 High-pressure pump outlet; 12. Water tank; 12.1 Water tank vent; 12.2 Water tank outlet; 13. Material compartment; 13.1 Material compartment outlet; 14. Filter compartment; 15. Collection compartment; 16. Front wall panel; 17. Agitator. Detailed Implementation

[0044] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0045] like Figures 1-12 As shown in the figure, this invention discloses a multi-field coupled assisted enhanced jet deburring chemical mechanical polishing (CMP) equipment and processing method for intersecting holes. This method enables deburring and precision polishing of the inner walls of deep intersecting holes after drilling, solving the problems of unremovable burrs and high surface roughness of the inner walls after drilling of cast casings. It overcomes the difficulties of existing mechanical deburring and polishing methods, which struggle to achieve precision polishing of the inner walls of deep intersecting holes, and the inherent defects of traditional abrasive flow and water jet processing methods, such as over-polishing, chamfering, and under-polishing.

[0046] Specifically, the present invention includes a frame 5 and a processing chamber 3, a collection chamber 15, a filter chamber 14, a material chamber 13, a water tank 12, a nozzle system 2, a light source 8, an ultrasonic generator 9, a vacuum pump 10, a high-pressure pump 11, a control system 7, and a sheet metal outer shell installed within the frame 5. The processing chamber 3 is used to hold workpieces and collect chemical mechanical polishing fluid. The nozzle system 2 is installed around the outer wall. The collection chamber 15 has a funnel-shaped structure, wider at the top and narrower at the bottom, and is installed at the bottom of the processing chamber 3. A screen with a mesh size of 0.5 to 1 mm is provided between the collection chamber 15 and the processing chamber 3 to collect and preliminarily filter burrs and other impurities mixed in the chemical mechanical polishing fluid.

[0047] Furthermore, the filter chamber 14 is a square structure that runs vertically through the bottom and is installed at the bottom of the collection chamber 15. A screen is provided between the filter chamber 14 and the collection chamber 15. The screen aperture is 0.1 to 0.5 mm, which is used to further filter out smaller burrs and other impurities mixed in the chemical mechanical polishing fluid.

[0048] Furthermore, the material chamber 13 is a vertically integrated square structure installed at the bottom of the filter chamber 14. A screen with a mesh size of 0.1–0.5 mm is provided between the filter chamber 14 and the material chamber 13 to further filter out smaller burrs and other impurities mixed in the chemical mechanical polishing fluid. A screen with a mesh size of 0.015–0.1 mm is also provided between the bottom of the material chamber 13 and the water tank 12 to separate and store the abrasive particles in the chemical mechanical polishing fluid in the material chamber 13, preventing them from entering the water tank 12 and then the high-pressure pump 11, which could damage the high-pressure pump 11. A stirrer 17 is installed near the bottom of the material chamber 13, and a material chamber outlet 13.1 is provided on the side wall below the stirrer 17. The abrasive particles in the chemical mechanical polishing fluid are collected in the material chamber 13 through multi-stage filtration and then re-enter the recycling cycle through the material chamber outlet 13.1. The stirrer 17 is used to agitate the abrasive particles in the material chamber 13 to prevent them from settling at the bottom of the material chamber 13 and clogging the screen.

[0049] Furthermore, the water tank 12 is a box-shaped structure with a square inlet at the top, used to hold chemical mechanical polishing fluid. It is installed at the bottom of the material compartment 13, and has a water tank vent 12.1 at the top of the side wall and a water tank outlet 12.2 at the bottom of the side wall.

[0050] Furthermore, the high-pressure pump 11 is installed on one side of the water tank 12 at the bottom of the frame 5 for pumping and pressurizing the chemical mechanical polishing fluid. The high-pressure pump inlet 11.1 is connected to the water tank outlet 12.2, and the high-pressure pump outlet 11.2 is connected to the nozzle inlet 2.1 of the nozzle system 2. The high-pressure pump 11 can provide a pressure of 1 to 400 MPa.

[0051] Furthermore, the vacuum pump 10 is installed on the frame 5, and the vacuum pump interface 10.1 is connected to the water tank air hole 12.1. After the vacuum pump 10 is turned on, it can form a negative pressure in the water tank 12, which facilitates the chemical mechanical polishing liquid to pass through the dense mesh screen at the bottom of the material chamber 13.

[0052] Furthermore, the ultrasonic generator 9 is mounted on the frame 5, and the ultrasonic generator 9 provides electrical power to the piezoelectric ceramic 2.8 of the nozzle system 2.

[0053] Furthermore, the light source 8 is mounted on the frame 5. The light source 8 can be a laser light source, an infrared light source, or an ultraviolet light source, depending on the processing requirements. The light source 8 is connected to the light source interface 2.3 of the nozzle system 2. The light source 8 is mainly used to enhance the chemical reaction activity through photocatalysis, thereby strengthening the chemical mechanical polishing process.

[0054] Further, the nozzle system 2 includes a nozzle inlet 2.1, a valve seat 2.2, a light source interface 2.3, a mixer 2.4, a flow deflector 2.5, an ultrasonic housing 2.6, a transducer 2.7, a piezoelectric ceramic 2.8, a nozzle housing 2.9, an electromagnetic coil 2.10, a sealing ring 2.11, and a feed inlet 2.12, as shown. Figure 4 As shown. The nozzle inlet 2.1 is a tubular structure, with one end connected to the high-pressure pump outlet 11.2. The pressurized chemical mechanical polishing fluid enters the nozzle system 2 through the nozzle inlet 2.1. The valve seat 2.2 is a cylindrical structure with concave end faces and an opening in the middle. It is installed inside the nozzle inlet 2.1 and is clearance-fitted with the nozzle inlet 2.1.

[0055] Furthermore, the mixer 2.4 is a tubular structure with a light source interface 2.3 and a feed inlet 2.12 communicating with the interior on its outer cylindrical surface. One end of the mixer 2.4 is threadedly connected to the inside of the nozzle inlet 2.1 and limits the valve seat 2.2. The light source interface 2.3 is connected to the light source 8, and the laser, infrared light, or ultraviolet light introduced through the light source interface 2.3 can act as a photocatalyst within the mixer 2.4, improving the chemical reactivity of the chemical mechanical polishing slurry. The feed inlet 2.12 is connected to the material chamber outlet 13.1, and the abrasive particles in the material chamber 13 enter the feed inlet 2.12 through the pipeline and mix with the chemical mechanical polishing slurry introduced through the nozzle inlet 2.1 in the mixer 2.4.

[0056] Furthermore, the spoiler 2.5 is installed inside the other end of the mixer 2.4. The spoiler 2.5 includes a spoiler housing 2.5.1, a spoiler central shaft 2.5.2, and spoiler blades 2.5.3, as shown below. Figure 11As shown, a support is provided inside the spoiler housing 2.5.1, the spoiler central shaft 2.5.2 is mounted on the support of the spoiler housing 2.5.1, and the spoiler blades 2.5.3 are mounted on the spoiler central shaft 2.5.2. The spoiler 2.5 is used to agitate the chemical mechanical polishing fluid passing through the mixer 2.4, forming a spiral-shaped vortex, increasing the shear force of the chemical mechanical polishing fluid on the inner wall of the deep hole, and controlling the vortex by adjusting the rotation speed of the spoiler 2.5, thereby controlling the shear force and forming a stable removal function. The spoiler 2.5 can be set to a powered type or a non-powered type according to the viscosity of the chemical mechanical polishing fluid. When the viscosity is high, the spoiler 2.5 adopts the powered type, that is, a micro motor is set at the support inside the spoiler housing 2.5.1 to drive the spoiler central shaft 2.5.2, which in turn drives the spoiler blades 2.5.3 to agitate. When the viscosity is low, the spoiler 2.5 can be a non-powered type, that is, the spoiler blade 2.5.3 is set as a twisted variable cross-section surface. The speed of the spoiler blade 2.5.3 can be adjusted by adjusting the flow rate at the nozzle inlet 2.1, thereby realizing the turbulence effect of the spoiler 2.5.

[0057] Furthermore, the ultrasonic housing 2.6 is a tubular structure, with one end threadedly connected to the inside of the mixer 2.4, limiting the position of the flow disruptor 2.5. The transducer 2.7 is a tubular structure, installed inside the ultrasonic housing 2.6, with a clearance fit. The inner wall of the transducer 2.7 is provided with annular fins that are obliquely inclined along the jet direction, and the minimum aperture of the inner wall of the transducer 2.7 is larger than the inner aperture of the valve seat 2.2. The outer wall of the transducer 2.7 is provided with a shoulder, and annular sealing rings 2.11 are provided at both ends of the transducer 2.7 and at the shoulder to prevent liquid from entering. The piezoelectric ceramic 2.8 is a circular structure, installed on the outer wall of the transducer 2.7, with a clearance fit between the outer wall of the piezoelectric ceramic 2.8 and the ultrasonic housing 2.6. One end of the piezoelectric ceramic 2.8 is fixed to the shoulder of the ultrasonic housing 2.6, and the other end is fixed to the shoulder of the transducer 2.7. When the piezoelectric ceramic 2.8 receives electrical energy, it converts the electrical energy into mechanical energy through the piezoelectric effect, which drives the transducer 2.7 to oscillate along the central axis of the ultrasonic shell 2.6, thereby generating a strong ultrasonic cavitation effect at the annular fins on the inner wall of the transducer 2.7.

[0058] Furthermore, the nozzle housing 2.9 is a tubular structure, with one end connected to the ultrasonic housing 2.6 via a threaded connection, and the other end connected to the nozzle system 2 mounting position set around the outer wall of the processing chamber 3 via a threaded connection.

[0059] Furthermore, the electromagnetic coil 2.10 is installed in the nozzle housing 2.9. When the electromagnetic coil 2.10 is energized, a controllable magnetic field can be formed within the nozzle housing 2.9. When the chemical mechanical polishing slurry passes through the electromagnetic coil 2.10, the magnetic medium in the slurry will increase the holding force of the abrasive grains under the action of the magnetic field, thereby increasing the grinding force of the slurry. Depending on the application requirements, the power supply to the electromagnetic coil 2.10 can be controlled by the control system 7 to form a constant magnetic field, thereby creating a constant holding force. Alternatively, the electromagnetic coil 2.10 can be periodically or pulsedly powered to form a periodic or pulsed holding force, thus enhancing the erosion effect of the slurry on burrs.

[0060] Furthermore, the control system 7 is used to integrate and control the operating parameters of the high-pressure pump 11, vacuum pump 10, ultrasonic generator 9, light source 8 and electromagnetic coil 2.10.

[0061] Furthermore, the outer shell sheet metal includes an upper wall panel 4, a side wall panel 6, and a front wall panel 16.

[0062] The processing method using the above-mentioned multi-energy field coupling-assisted enhanced jet cross-hole deburring chemical mechanical polishing equipment includes the following steps:

[0063] Step 1: Open the top cover 1 and put the workpiece into the processing chamber 3. According to the actual processing requirements, install the nozzle system 2 on the outer wall of the processing chamber 3. The nozzle system 2 must be directly facing the processing point. Alternatively, the nozzle housing 2.9 of the nozzle system 2 can be connected to the deep hole to be processed on the workpiece through a pipeline.

[0064] Step 2: Add the prepared chemical mechanical polishing slurry to the processing chamber 3. The chemical mechanical polishing slurry contains abrasive particles. Close the top cover 1 and simultaneously turn on the stirrer 17 and vacuum pump 10 through the control system 7. When the liquid level in the water tank 12 is higher than the water tank outlet 12.2, turn on the high pressure pump 11.

[0065] Step 3: After the high-pressure pump 11 is turned on, the chemical mechanical polishing slurry begins to circulate. The speed of the high-pressure pump 11 is set in the control system 7 according to the processing requirements to ensure the outlet pressure. At the same time, the speed of the vacuum pump 10 is set to ensure that a negative pressure is formed in the water tank 12, so that the abrasive particles in the chemical mechanical polishing slurry can be effectively separated in the material chamber 13 and maintain dynamic balance.

[0066] Step 4: Set the operating parameters of the ultrasonic generator 9, light source 8, and electromagnetic coil 2.10 as needed through the control system 7, and begin processing;

[0067] Step 5: After processing is completed, first turn off the high-pressure pump 11 and vacuum pump 10 simultaneously, then turn off other equipment, open the top cover 1, and unload the workpiece.

[0068] The chemical mechanical polishing slurry used in this invention comprises the following components:

[0069] For rough polishing: Use one or more combinations of alumina, silicon carbide, diamond, zirconium oxide, and boron carbide abrasives, with a particle size of 0.3–0.5 mm and a concentration of 3–15 wt%; add one or more combinations of cerium oxide, lanthanum oxide, praseodymium oxide, and magnesium oxide abrasives, with a particle size of 0.3–0.5 mm and a concentration of 0.5–7 wt%; add iron catalyst, iron, nickel, and iron-nickel alloy abrasives, with a particle size of 0.3–0.5 mm and a concentration of 1–8 wt%; the total concentration of all abrasives should not exceed 20 wt%. The photosensitive component includes one or more combinations of neoindocyanine green, benzophenone, graphene oxide, graphene, g-C3N4, 5-aminolevulinic acid, tungsten nitride, and methyl phenyl sulfide, with a concentration of 0.5–5 wt%. The oxidant includes one or more combinations of hydrogen peroxide, potassium permanganate, and potassium ferrate, with a concentration of 0.5–5 wt%. Acidic corrosives include one or more combinations of phosphoric acid, metaphosphoric acid, malic acid, citric acid, oxalic acid, and phytic acid, with a pH of 3–6. pH adjusters include one or more combinations of sodium carbonate, sodium bicarbonate, triethanolamine, sodium hydroxide, and potassium hydroxide. Corrosion inhibitors include one or more combinations of glycine, sodium tartrate, sodium benzoate, and benzotriazole, with a concentration of 0.05–2 wt%. Chelating agents include one or more combinations of ethylene glycol, polyethylene glycol, sorbitol, sodium citrate, polyphosphates, and mannitol, with a concentration of 0.5–5 wt%. The remainder is water.

[0070] For fine polishing: One or more combinations of alumina, silicon carbide, diamond, zirconium oxide, and boron carbide abrasives are used, with a particle size of 0.1–0.05 mm and a concentration of 0.1–5 wt%; one or more combinations of cerium oxide, lanthanum oxide, praseodymium oxide, and magnesium oxide abrasives are added, with a particle size of 0.1–0.05 mm and a concentration of 1–10 wt%; iron catalyst, iron, nickel, and iron-nickel alloy abrasives are added, with a particle size of 0.1–0.05 mm and a concentration of 0.1–5 wt%; the total concentration of all abrasives does not exceed 20 wt%. The photosensitive component includes one or more combinations of neoindocyanine green, benzophenone, graphene oxide, graphene, g-C3N4, 5-aminolevulinic acid, tungsten nitride, and methyl phenyl sulfide, with a concentration of 0.1–3 wt%. The oxidizing agent includes one or more combinations of hydrogen peroxide, potassium permanganate, and potassium ferrate, with a concentration of 0.1–3 wt%. The acidic corrosive agent includes one or more combinations of phosphoric acid, metaphosphoric acid, malic acid, citric acid, oxalic acid, and phytic acid, with a pH of 3–6. The pH adjuster includes one or more combinations of sodium carbonate, sodium bicarbonate, triethanolamine, sodium hydroxide, and potassium hydroxide. The corrosion inhibitor includes one or more combinations of glycine, sodium tartrate, sodium benzoate, and benzotriazole, with a concentration of 0.01–2 wt%. The chelating agent includes one or more combinations of ethylene glycol, polyethylene glycol, sorbitol, sodium citrate, polyphosphates, and mannitol, with a concentration of 0.01–3 wt%. The remainder is water.

[0071] Optical photographs of the inner wall of the ZL114A cast aluminum alloy workpiece before and after polishing according to this invention are shown below. Figure 13 and Figure 14 As shown in the comparison, it can be seen that the present invention achieves precise removal of burrs inside deep cross holes and precision polishing of the inner wall.

[0072] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A multi-energy field coupling assisted enhanced jet cross-hole deburring chemical mechanical polishing equipment, comprising a rack and a processing cabin, a collection cabin, a material cabin, a water tank, a nozzle system, a light source, an ultrasonic generator, a high-pressure pump and a control system installed in the rack, further comprising a cover and a vacuum pump installed in the rack, the processing cabin, the collection cabin, the material cabin and the water tank being connected in sequence; the processing cabin is used for containing workpieces and chemical mechanical polishing liquid, and the nozzle system mounting position is arranged around the outer wall of the processing cabin; the collection cabin is installed at the bottom of the processing cabin and used for collecting and preliminarily filtering burr scraps and other impurities mixed in the chemical mechanical polishing liquid; the material cabin is used for separating and storing abrasive particles in the chemical mechanical polishing liquid; the water tank is used for containing the chemical mechanical polishing liquid, and the output end of the water tank is connected with the high-pressure pump and the nozzle system; the light source is installed in the rack and connected with the light source interface of the nozzle system, and the light source is used for improving the chemical reaction activity through photocatalysis and enhancing the chemical mechanical polishing process; the ultrasonic generator is connected with the nozzle system and used for improving the mechanical force of abrasive particles in the chemical mechanical polishing liquid through controllable ultrasonic assistance; and the control system is used for adjusting the pressure of the high-pressure pump and the output state of the nozzle and its internal units, so as to accurately control the flow field behavior after multi-energy field coupling in the nozzle system. The nozzle system comprises a nozzle inlet, a valve seat, a light source interface, a mixer, a spoiler, an ultrasonic shell, a transducer, a piezoelectric ceramic, a nozzle shell, a sealing ring and a feeding port; the nozzle inlet is a tubular structure, one end of which is connected with the outlet of the high-pressure pump, and the pressurized chemical mechanical polishing liquid enters the nozzle system from the nozzle inlet; the valve seat is a cylindrical structure with concave end faces and a hole in the middle, which is installed in the nozzle inlet and gap-fitted with the nozzle inlet; the mixer is a tubular structure, the outer cylindrical surface of which is provided with the light source interface and the feeding port which are in communication with the inside, one end of the mixer is threadedly connected and installed in the inside of the nozzle inlet and limits the valve seat, and the feeding port is in communication with the outlet of the material cabin; the abrasive particles in the material cabin enter the feeding port through the pipeline and are mixed with the chemical mechanical polishing liquid entering the nozzle inlet in the mixer; the light source is detachable and is selected according to the processing requirement, the light source interface is in communication with the light source, and the light source entering the light source interface is used for photocatalysis in the mixer to improve the chemical reaction activity of the chemical mechanical polishing liquid. The electromagnetic coil is further arranged in the nozzle shell, a controllable magnetic field is formed in the nozzle shell when the electromagnetic coil is electrified, the power supply of the electromagnetic coil is controlled by the control system to form a constant magnetic field, and then a constant holding force is formed, or the electromagnetic coil is periodically or impulsively powered to form a periodic or impulsive holding force.

2. The multi-energy field coupling assisted enhanced jet cross-hole deburring chemical mechanical polishing apparatus according to claim 1, wherein, The collecting cabin is funnel-shaped structure, large at top and small at bottom, and a screen is arranged between the collecting cabin and the processing cabin to collect and preliminarily filter burr scraps and other impurities mixed in the chemical mechanical polishing liquid; the filtering cabin is square structure penetrating from top to bottom, is installed at the bottom of the collecting cabin, and a screen is arranged between the filtering cabin and the collecting cabin to further filter burr scraps and other impurities mixed in the chemical mechanical polishing liquid.

3. The multi-energy field coupling assisted enhanced jet cross-hole deburring chemical mechanical polishing apparatus of claim 1, wherein The material cabin is square structure penetrating from top to bottom, is installed at the bottom of the filtering cabin, a screen is arranged between the filtering cabin and the material cabin to further filter burr scraps and other impurities mixed in the chemical mechanical polishing liquid, a screen is arranged between the bottom of the material cabin and the water tank to separate and store the abrasive particles in the chemical mechanical polishing liquid in the material cabin, a stirrer is installed at the bottom of the material cabin, and a material cabin outlet is arranged on the sidewall below the stirrer; the abrasive particles in the chemical mechanical polishing liquid are collected in the material cabin through multi-stage filtering and re-enter the use cycle through the material cabin outlet, and the stirrer is used to stir the abrasive in the material cabin to avoid the abrasive deposited on the bottom of the material cabin to block the screen.

4. The multi-energy field coupling assisted enhanced jet cross-cone deburring chemical mechanical polishing apparatus of claim 1, wherein, The water tank is box structure provided with a square inlet at the top, is used to contain the chemical mechanical polishing liquid, is installed at the bottom of the material cabin, and is provided with a water tank air hole at the top of the sidewall and a water tank liquid outlet at the bottom of the sidewall; the high-pressure pump is installed at one side of the water tank at the bottom of the rack, is used to pump and pressurize the chemical mechanical polishing liquid, the high-pressure pump inlet is communicated with the water tank liquid outlet, the high-pressure pump liquid outlet is communicated with the nozzle inlet of the nozzle system, and the high-pressure pump provides a pressure of 1-400 Mpa; the vacuum pump interface is communicated with the water tank air hole, and the vacuum pump can form negative pressure in the water tank after being turned on, so that the chemical mechanical polishing liquid can pass through the dense screen at the bottom of the material cabin.

5. The multi-energy field coupling assisted enhanced jet cross-hole deburring chemical mechanical polishing apparatus of claim 1, wherein, The spoiler is installed inside the other end of the mixer, and the spoiler includes a spoiler shell, a spoiler shaft and a spoiler blade; the spoiler shell is provided with a support inside, the spoiler shaft is installed on the support of the spoiler shell, and the spoiler blade is installed on the spoiler shaft; the spoiler is used to disturb the chemical mechanical polishing liquid passing through the mixer to form spiral traveling vortex, improve the shear force of the chemical mechanical polishing liquid on the inner wall of the deep hole, and control the vortex and the shear force by adjusting the rotating speed of the spoiler, so as to form a stable removal function; the spoiler is set as a powered type and a non-powered type according to the viscosity of the chemical mechanical polishing liquid; when the viscosity is high, the spoiler adopts the powered type, that is, a micro motor is arranged at the support inside the spoiler shell to drive the spoiler shaft and the spoiler blade to disturb; when the viscosity is low, the spoiler adopts the non-powered type, that is, the spoiler blade is set as a twisted variable cross-section curved surface, the rotating speed of the spoiler blade is adjusted by adjusting the flow rate of the nozzle inlet, and then the spoiler disturbance effect is realized.

6. The multi-energy field coupling assisted enhanced jet cross-hole deburring chemical mechanical polishing apparatus of claim 1, wherein, The ultrasonic generator is installed on the rack, the ultrasonic generator provides electric energy for the piezoelectric ceramic of the nozzle system, the ultrasonic shell is a tubular structure, one end is installed in the mixer through threaded connection, and the other end is limited by the spoiler, the transducer is a tubular structure, which is installed in the ultrasonic shell and gap-fitted with the ultrasonic shell, the inner wall of the transducer is provided with an annular fin which is inclined along the jet direction, the minimum aperture of the inner wall of the transducer is larger than the inner aperture of the valve seat, the outer wall of the transducer is provided with a shaft shoulder, and annular sealing rings are arranged at both ends of the transducer and the shaft shoulder to prevent liquid from entering, the piezoelectric ceramic is a circular ring structure, which is installed on the outer wall of the transducer, the outer wall of the piezoelectric ceramic is gap-fitted with the ultrasonic shell, one end of the piezoelectric ceramic is fixed on the shaft shoulder of the ultrasonic shell, and the other end is fixed on the shaft shoulder of the transducer, the nozzle shell is a tubular structure, one end is installed in the ultrasonic shell through threaded connection, and the other end is installed in the nozzle system mounting position arranged around the outer wall of the processing cabin through threaded connection.

7. The multi-energy field coupling assisted enhanced jet cross-hole deburring chemical mechanical polishing apparatus of claim 1, wherein, The rack is externally provided with a shell sheet metal, and the shell sheet metal comprises an upper wall plate, a side wall plate and a front wall plate.

8. A processing method based on the multi-function field coupling assisted enhanced jet cross-hole deburring chemical mechanical polishing equipment according to any one of claims 1-7, characterized in that, The steps include: Step 1, open the upper cover, put the workpiece into the processing cabin, install the nozzle system on the outer wall of the processing cabin according to the actual processing requirements, the nozzle system needs to face the processing site, or the nozzle shell of the nozzle system and the workpiece deep hole to be processed can be connected through a pipeline; Step 2, add the prepared chemical mechanical polishing liquid into the processing cabin, close the upper cover, start the stirrer and vacuum pump through the control system, and when the liquid level in the water tank is higher than the water outlet of the water tank, start the high-pressure pump; Step 3, after the high-pressure pump is started, the chemical mechanical polishing liquid starts to circulate, the rotating speed of the high-pressure pump is set in the control system according to the processing requirements, the outlet pressure is ensured, the rotating speed of the vacuum pump is set, the negative pressure in the water tank is ensured, the abrasive particles in the chemical mechanical polishing liquid can be effectively separated in the material cabin, and dynamic balance is maintained; Step 4, set the operating parameters of the ultrasonic generator, light source and electromagnetic coil through the control system as required, and start processing; Step 5, after processing is completed, the high-pressure pump and vacuum pump are closed at the same time, then other equipment is closed, the upper cover is opened, and the workpiece is removed.

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